JP7149196B2 - Evaporation mask - Google Patents

Description

One of the embodiments of the present invention relates to a vapor deposition mask. In particular, one embodiment of the present invention relates to a deposition mask having a thin-film mask body.

Examples of flat panel display devices include liquid crystal display devices and organic EL (electroluminescence) display devices. These display devices are structures in which thin films containing various materials such as insulators, semiconductors, and conductors are laminated on a substrate. By appropriately patterning and connecting these thin films, a function as a display device is realized.

Methods for forming thin films are roughly classified into vapor phase methods, liquid phase methods, and solid phase methods. Vapor-phase methods are classified into physical vapor-phase methods and chemical vapor-phase methods. A vapor deposition method is known as a representative example of the physical vapor phase method. The vacuum deposition method is the simplest of the deposition methods. The vacuum deposition method heats the material under high vacuum to sublimate or evaporate the material to generate vapor of the material (hereinafter collectively referred to as vaporization). In a region for depositing this material (hereinafter referred to as vapor deposition region), the vaporized material is solidified and deposited to obtain a thin film of the material. A thin film is selectively formed on the vapor deposition region, and vacuum vapor deposition is performed using a mask (deposition mask) in order to prevent the material from depositing on other regions (hereinafter referred to as non-deposition regions) ( See Patent Documents 1 and 2).

JP 2009-87840 A JP 2013-209710 A

Patent Documents 1 and 2 disclose a vapor deposition mask in which a vapor deposition region is formed of a thin film. A connecting structure is required. An object of one of the embodiments of the present invention is to provide a stable connection structure between a thin film and a holding frame that holds the thin film in a vapor deposition mask in which a vapor deposition region is formed of a thin film.

A vapor deposition mask according to one embodiment of the present invention has a layered structure including a thin-film mask body provided with a plurality of openings, and a first layer and a second layer provided around the mask body. a holding frame, a first connecting member provided between the mask body and the holding frame, and a second connecting member connecting the first layer and the second layer, wherein the first One of the layer and the second layer has a through hole penetrating through one of the first layer and the second layer in the thickness direction thereof, and the second connecting member includes an inner wall of the through hole and the second layer. It is in contact with the other surface of the first layer and the second layer, and continuously covers from the inner wall of the through hole to the other surface of the first layer and the second layer.

A vapor deposition mask according to one embodiment of the present invention comprises a thin-film mask body provided with a plurality of openings; a holding frame provided around the mask body and having a first layer and a second layer; a first connecting member connecting the mask body and the holding frame; and a second connecting member connecting the first layer and the second layer, wherein the first layer and the second connecting member connects the inner wall of the through hole and the surface of the second layer exposed by the through hole.

1 is a top view of a vapor deposition apparatus according to one embodiment of the present invention; FIG. 1 is a side view of a vapor deposition apparatus according to one embodiment of the present invention; FIG. 1 is a cross-sectional view of a vapor deposition source according to an embodiment of the invention; FIG. 1 is a top view of a vapor deposition mask according to one embodiment of the present invention; FIG. 1 is a cross-sectional view of a vapor deposition mask according to one embodiment of the present invention; FIG. 1 is an enlarged cross-sectional view of a vapor deposition mask according to one embodiment of the present invention; FIG. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is a top view which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. It is sectional drawing which shows the manufacturing method of the vapor deposition mask which concerns on one Embodiment of this invention. 1 is an enlarged cross-sectional view of a vapor deposition mask according to one embodiment of the present invention; FIG. 1 is an enlarged cross-sectional view of a vapor deposition mask according to one embodiment of the present invention; FIG. 1 is a top view of a vapor deposition mask according to one embodiment of the present invention; FIG. 1 is a cross-sectional view of a vapor deposition mask according to one embodiment of the present invention; FIG. 1 is a top view of a display device according to an embodiment of the invention; FIG. 1 is a cross-sectional view of a display device according to an embodiment of the invention; FIG. 1 is a cross-sectional view of a display device according to an embodiment of the invention; FIG. 1 is a cross-sectional view of a display device according to an embodiment of the invention; FIG. 1 is a cross-sectional view of a display device according to an embodiment of the invention; FIG. 1 is a cross-sectional view of a display device according to an embodiment of the invention; FIG. 1 is a cross-sectional view of a display device according to an embodiment of the invention; FIG. 1 is a cross-sectional view of a display device according to an embodiment of the invention; FIG. 1 is a cross-sectional view of a display device according to an embodiment of the invention; FIG.

Hereinafter, each embodiment of the present invention will be described with reference to the drawings and the like. However, the present invention can be implemented in various aspects without departing from the gist thereof, and should not be construed as being limited to the description of the embodiments illustrated below.

In order to make the description clearer, the drawings may schematically show the width, thickness, shape, etc. of each part compared to the actual mode. However, the example shown in the drawings is only an example and does not limit the interpretation of the present invention. In this specification and each figure, the same reference numerals may be given to the same configurations as those described above with respect to the already-appearing figures, and detailed description thereof may be omitted as appropriate.

In the present invention, when a plurality of films are formed by performing etching or light irradiation on a certain film, these films may have different functions and roles. However, these films are derived from films formed as the same layer in the same process, and have the same layer structure and the same material. Therefore, these multiple films are defined as existing in the same layer.

In this specification and the scope of claims, when expressing an aspect in which another structure is arranged on top of a certain structure, unless otherwise specified, the term “over” simply means that a certain structure In the case where another structure is placed directly above that structure so that it touches the body, and in the case where another structure is placed above another structure via another structure defined as inclusive of both.

<First Embodiment>
A vapor deposition mask, a method for manufacturing a vapor deposition mask, and a vapor deposition apparatus using the same according to an embodiment of the present invention will be described with reference to FIGS. 1 to 15. FIG.

[Configuration of Vapor Deposition Device 10]
A configuration of a vapor deposition apparatus 10 according to an embodiment of the present invention will be described with reference to FIGS. 1 to 3. FIG. Deposition apparatus 10 includes a plurality of chambers having various functions. The example shown below is an example showing one deposition chamber 100 of a plurality of chambers. FIG. 1 is a top view of a vapor deposition apparatus according to one embodiment of the present invention. FIG. 2 is a side view of a vapor deposition apparatus according to one embodiment of the invention.

As shown in FIG. 1, deposition chambers 100 are separated from adjacent chambers by load lock doors 102 . The deposition chamber 100 can maintain the interior of the deposition chamber 100 in a high-vacuum state, or in a state filled with an inert gas such as nitrogen or argon. Therefore, a decompression device, a gas suction/exhaust mechanism, and the like (not shown) are connected to the vapor deposition chamber 100 .

The deposition chamber 100 has a configuration capable of accommodating an object on which a deposition film is to be formed. An example in which a plate-shaped vapor-deposited substrate 104 is used as the object will be described below. As shown in FIGS. 1 and 2, a deposition source 112 is positioned below the substrate 104 to be deposited. The vapor deposition source 112 has a substantially rectangular shape and is arranged along one side of the vapor-deposited substrate 104 . Such a vapor deposition source 112 is called a linear source type. When the linear source type deposition source 112 is used, the deposition chamber 100 has a structure in which the substrate 104 to be deposited and the deposition source 112 move relatively. FIG. 1 shows an example in which the vapor deposition source 112 is fixed and the vapor-deposited substrate 104 moves thereon.

The deposition source 112 is filled with the material to be deposited. The vapor deposition source 112 has a heating unit 122 (see FIG. 3 described later) that heats the material. When the material is heated by the heating unit 122 of the vapor deposition source 112 , the heated material is vaporized into vapor that travels from the vapor deposition source 112 to the vapor deposition target substrate 104 . When the material vapor reaches the surface of the vapor-deposited substrate 104 , the vapor cools and solidifies, depositing material on the surface of the vapor-deposited substrate 104 . In this manner, a thin film of the material is formed on the vapor-deposited substrate 104 (on the lower surface of the vapor-deposited substrate 104 in FIG. 2).

As shown in FIG. 2, the deposition chamber 100 further includes a holder 108 for holding the deposition target substrate 104 and the deposition mask 300, a moving mechanism 110 for moving the holder 108, a shutter 114, and the like. The positional relationship between the deposition target substrate 104 and the deposition mask 300 is maintained by the holder 108 . The deposition target substrate 104 and the deposition mask 300 are moved over the deposition source 112 by the moving mechanism 110 . A shutter 114 is movably provided above the vapor deposition source 112 . By moving the shutter 114 above the deposition source 112 , the shutter 114 shields the vapor of the material heated by the deposition source 112 . By moving the shutter 114 to a position where it does not overlap with the deposition source 112 , the vapor of the material is not blocked by the shutter 114 and can reach the deposition target substrate 104 . Opening and closing of the shutter 114 is controlled by a control device (not shown).

In the example shown in FIG. 1, the linear source type vapor deposition source 112 is shown, but the vapor deposition source 112 is not limited to the shape described above and can have any shape. For example, the shape of the vapor deposition source 112 may be a so-called point source shape in which the material used for vapor deposition is selectively arranged at and near the center of gravity of the vapor deposition target substrate 104 . In the case of the point source type, the relative positions of the vapor-deposited substrate 104 and the vapor deposition source 112 may be fixed, and a mechanism for rotating the vapor-deposited substrate 104 may be provided in the vapor deposition chamber 100 . In the examples shown in FIGS. 1 and 2, the horizontal deposition apparatus is shown in which the substrate is arranged so that the main surface of the substrate is parallel to the horizontal direction. It can also be used in a vertical vapor deposition apparatus in which the substrate is arranged so as to be perpendicular to the substrate.

FIG. 3 is a cross-sectional view of a vapor deposition source according to one embodiment of the invention. The vapor deposition source 112 has a container 120 , a heating unit 122 , a vapor deposition holder 124 , a mesh metal plate 128 and a pair of guide plates 132 .

The storage container 120 is a member that holds the material to be vapor-deposited. A member such as a crucible can be used as the container 120 . The storage container 120 is detachably held inside the heating unit 122 . The container 120 can include metals such as tungsten, tantalum, molybdenum, titanium, nickel, and alloys thereof. Alternatively, the container 120 can include inorganic insulators such as alumina, boron nitride, and zirconium oxide.

The heating unit 122 is detachably held inside the vapor deposition holder 124 . The heating unit 122 has a configuration for heating the storage container 120 by resistance heating. Specifically, the heating unit 122 has a heater 126 . By energizing the heater 126, the heating part 122 is heated, and the material in the storage container 120 is heated and vaporized. The vaporized material is emitted outside the storage container 120 through the opening 130 of the storage container 120 . A mesh-like metal plate 128 arranged to cover the opening 130 prevents the bumping material from being discharged outside the storage container 120 . Heating portion 122 and deposition holder 124 may include similar materials as container 120 .

A pair of guide plates 132 are provided above the vapor deposition source 112 . At least part of the guide plate 132 is inclined with respect to the side surface of the storage container 120 or the vertical direction. The inclination of the guide plate 132 controls the spread angle of the vapor of the material (hereinafter referred to as the injection angle), and directivity can be imparted to the flying direction of the vapor. The emission angle is determined by the angle θe (unit: °) formed by the two guide plates 132 . The angle θe is appropriately adjusted depending on the size of the deposition target substrate 104, the distance between the deposition source 112 and the deposition target substrate 104, and the like. The angle θe is, for example, 40° or more and 80° or less, 50° or more and 70° or less, typically 60°. The planes formed by the inclined surfaces of the guide plate 132 are the critical planes 160a, 160b. The material vapor flies through the space substantially sandwiched between the critical surfaces 160a, 160b. Although not shown, if the deposition source 112 is a point source, the guide plate 132 may be part of the surface of a cone.

The material to be deposited can be selected from a wide variety of materials and can be either organic or inorganic. As the organic compound, for example, a light-emitting material or a carrier-transporting organic compound can be used. As the inorganic compound, metals, alloys thereof, metal oxides, or the like can be used. A single storage container 120 may be filled with a plurality of materials for film formation. Although not shown, deposition chamber 100 may be configured to use multiple deposition sources to heat different materials simultaneously.

[Structure of Vapor Deposition Mask 300]
The configuration of a vapor deposition mask 300 according to an embodiment of the present invention will be described with reference to FIGS. 4 to 6. FIG. FIG. 4 is a top view of a vapor deposition mask according to one embodiment of the invention. The vapor deposition mask 300 has a thin-film mask main body 310 , a holding frame 330 , a first connection member 350 and a second connection member 390 . The mask body 310 is provided with a plurality of openings 311 penetrating from the top surface to the bottom surface of the mask body 310 . A region of the mask body 310 other than the opening 311 is called a non-opening portion. A non-aperture surrounds each aperture 311 . Note that the thickness of the mask body 310 is 1 μm or more and 10 μm or less. The aperture 311 is, more specifically, a plurality of apertures 311p arranged in accordance with the pixel pitch of the display device.

At the time of vapor deposition, the vapor deposition mask 300 and the vapor deposition substrate 104 are aligned so that the vapor deposition regions of the vapor deposition target substrate 104 and the openings 311 overlap, and the non-vapor deposition regions and non-opening portions of the vapor deposition target substrate 104 overlap. Vapor of material passes through openings 311 and deposits material on the deposition area of substrate 104 to be deposited.

The holding frame 330 is provided around the mask body 310 . The first connecting member 350 is provided between the mask body 310 and the holding frame 330 and connects the mask body 310 and the holding frame 330 . The first outer edge 353 of the first connecting member 350 in the region contacting the holding frame 330 is outside the second outer edge 313 of the mask body 310 in the region contacting the first connecting member 350 . That is, in plan view, the mask body 310 and the holding frame 330 do not overlap. In other words, the first outer edge 353 surrounds the second outer edge 313 . However, the mask main body 310 may overlap the holding frame 330 in plan view.

The second connection member 390 is provided in a region outside the first connection member 350 . The second connection member 390 surrounds the first connection member 350 with the slit 391 interposed therebetween. The second connecting member 390 includes a first shape 393 longitudinal in the D1 direction, a second shape 395 longitudinal in the D2 direction, and a shape longitudinal in the D1 direction and a shape longitudinal in the D2 direction connected to each other. A third shape 397 is included. In the example of FIG. 4 , the second connecting member 390 with the first shape 393 is provided along the long side of the vapor deposition mask 300 . A second connection member 390 having a second shape 395 is provided along the short side of the vapor deposition mask 300 . A second connection member 390 having a third shape 397 is provided at a corner portion of the vapor deposition mask 300 .

Although FIG. 4 illustrates the configuration in which the second connecting member 390 is provided only in the outer region of the first connecting member 350, it may be provided in the inner region of the first connecting member 350. FIG. Although the details will be described later, the slit 391 is provided to prevent the inner region and the outer region of the second connecting member 390 from being completely separated in the manufacturing process of the vapor deposition mask 300. , the slit 391 may not be provided as long as this separation can be prevented.

FIG. 5 is a cross-sectional view of a vapor deposition mask according to one embodiment of the present invention. The cross-sectional view shown in FIG. 5 is a cross-sectional view taken along line A-A' in FIG. As shown in FIG. 5 , the first connecting member 350 is provided above the mask body 310 along the edge of the mask body 310 . The first connection member 350 protrudes from the end of the mask body 310 toward the outside of the mask body 310 . Although the opening 311 includes a plurality of openings 311p as shown in FIG. 4, the opening 311 is shown as one continuous one for convenience of explanation.

The holding frame 330 is provided above the upper surface of the mask body 310 . That is, the lower end (lower surface 331) of the holding frame 330 is provided above the upper end of the mask body 310 in the vertical direction. Further, the holding frame 330 is provided outside the second outer edge 313 of the mask body 310 . That is, the holding frame 330 is provided outside the mask body 310 in the horizontal direction. The vertical direction mentioned above is a direction perpendicular to the main surface of the mask body 310 . A horizontal direction is a direction parallel to the main surface of the mask body 310 .

The first connection member 350 contacts the side surface 335 of the holding frame 330 . On the other hand, the first connection member 350 is not provided on the upper surface 333 and the lower surface 331 of the holding frame 330 . The first connection member 350 is in contact with the side surface 335 of the holding frame 330 from the lower end to the upper end. However, the first connection member 350 may be in contact with the upper surface 333 and the lower surface 331 .

The holding frame 330 is a laminated structure having a first layer 360 and a second layer 370 . A second layer 370 is provided above the first layer 360 . In other words, the first layer 360 is closer to the mask body 310 than the second layer 370 is. The second layer 370 is provided with a through hole 377 penetrating from the upper surface to the lower surface of the second layer 370 in the thickness direction of the second layer 370 . A second connection member 390 is provided inside the through hole 377 . The second connecting member 390 connects the inner wall of the through hole 377 and the upper surface of the first layer 360 exposed through the through hole 377 . In other words, the second connecting member 390 fixes the first layer 360 and the second layer 370 together.

FIG. 6 shows an enlarged view of the area surrounded by the dotted line in FIG. As shown in FIG. 6 , the second connecting member 390 is in contact with the inner wall 378 of the through hole 377 and the upper surface 363 of the first layer 360 exposed through the through hole 377 . The second connecting member 390 continuously covers from the inner wall 378 to the upper surface 363 . The second connection member 390 is provided not only in the area where the through hole 377 is provided, but also in the area where the first layer 360 and the second layer 370 face each other. That is, the second connecting member 390 is in contact with part of the bottom surface 371 of the second layer 370 . In other words, the second connecting member 390 extends vertically below the second layer 370 . The second connection member 390 is harder than the adhesive layer 500 described below. In this embodiment, the second connecting member 390 is the same material as the first connecting member 350 . In the example of FIG. 6, only the inner wall 378 and the upper surface 363 are provided with the second connecting members 390 and the through holes 377 are not completely filled with the second connecting members 390 . That is, inside the through hole 377, the second connection member 390 has a hollow structure. In other words, the top surface of the second connecting member 390 is concave.

The first connecting member 350 contacts the side surface 365 of the first layer 360 and the side surface 375 of the second layer 370 . The first connection member 350 is provided not only on the side surfaces 365 and 375 but also on the area where the first layer 360 and the second layer 370 face each other. That is, the first connection member 350 is in contact with part of the bottom surface 371 of the second layer 370 . In other words, the first connection member 350 extends vertically below the second layer 370 . The first connecting member 350 is recessed inside a plurality of openings 315 provided near the second outer edge 313 of the mask body 310 .

An adhesive layer 500 is provided between the first layer 360 and the second layer 370 in areas other than the area where the second connection member 390 is provided. In other words, the first layer 360 and the second layer 370 are connected by the second connecting member 390 in the region where the through hole 377 is provided, and the first layer 360 and the first layer 370 are connected by the adhesive layer 500 in the region where the through hole 377 is not provided. Layer 360 and second layer 370 are connected. In plan view, the pattern of the adhesive layer 500 is substantially the same as the pattern of the second layer 370 . However, the pattern of the adhesive layer 500 is positioned slightly inside the pattern of the second layer 370 . In other words, part of the bottom surface of the second layer 370 is exposed from the adhesive layer 500 . In FIG. 6 , the lower surface 371 of the area exposed from the adhesive layer 500 of the lower surface 371 of the second layer 370 is in contact with the first connection member 350 and the second connection member 390 .

In the above configuration, the thickness d1 of the mask body 310 is 1 μm or more and 10 μm or less. A thickness d2 from the lower surface 331 (or the lower surface 361) of the holding frame 330 to the lower end of the first connection member 350 is 10 μm or more and 100 μm or less. In FIG. 6, the thickness d1 is approximately the same size as the thickness d2 for convenience of explanation, but as described above, the thickness d1 is smaller than the thickness d2 by about one order of magnitude. At this time, if an attempt is made to fix the holding frame 330 and the mask body 310 by, for example, spot welding, if the tensile stress of the mask body 310 is large, distortion will occur between the bonded portion and the non-bonded portion, or the distortion will occur. Defects such as damage to the thin film portion may occur due to the In addition, if the mask body 310 is a thin film, it has a small heat capacity and melts immediately due to the heat generated by welding. According to this embodiment, the holding frame 330 and the mask body 310 can be uniformly joined using the first connecting member 350 .

In the present embodiment, the configuration in which the first layer 360 and the second layer 370 are connected by the second connecting member 390 in the region where the through hole 377 is provided is illustrated for reasons of the manufacturing method. Not limited to configuration. It is sufficient that the first layer 360 and the second layer 370 are connected by the second connecting member 390 in at least a partial region between the first layer 360 and the second layer 370, and the second layer 370 is penetrated. Holes 377 may not be provided. That is, the second connecting member 390 may be provided in the region where the first layer 360 and the second layer 370 face each other.

Also, the positional relationship between the first layer 360 and the second layer 370 in FIG. 6 may be reversed. That is, the first layer 360 is provided with through holes instead of the second layer 370, and the lower surface 371 of the second layer 370 is exposed from the through holes and the adhesive layer 500 in the region where the through holes are provided. may have been Then, the second connecting member 390 may be in contact with the inner wall of the through hole and the lower surface 371 .

Also, the second connection member 390 may fill the through hole 377 . The pattern of the adhesive layer 500 may be the same as the pattern of the second layer 370 . That is, the entire lower surface 371 of the second layer 370 may be covered with the adhesive layer 500 . The pattern of the adhesive layer 500 may be located outside the pattern of the second layer 370 . That is, part of the upper surface of the adhesive layer 500 may be exposed from the second layer 370 inside the through hole 377 . In this case, on the inner side of the holding frame 330 (on the side of the holding frame 330 closer to the first connection member 350), the adhesive layer 500 is positioned inside the holding frame 330 more than the side surface 365 of the first layer 360 and the side surface 375 of the second layer 370. protrude to

Although the first connection member 350 and the second connection member 390 are made of the same material in this embodiment, the first connection member 350 and the second connection member 390 may be made of different materials. However, both the first connection member 350 and the second connection member 390 are harder than the adhesive layer 500 .

Although the second connection member 390 is in contact with each of the first layer 360 and the second layer 370 in this embodiment, the configuration is not limited to this. For example, a layer harder than the adhesive layer 500 may be provided between the second connection member 390 and the first layer 360 or between the second connection member 390 and the second layer 370 .

[Problems Confirmed in the Process of Reaching the Present Invention]
In the case of a vapor deposition mask using a mask body 310 having a thickness of 10 μm or less like the vapor deposition mask 300 shown in FIGS. is affixed to the holding frame 330 with . As a result, strong stress is applied between the mask body 310 and the first connection member 350 and between the holding frame 330 and the first connection member 350 . If the strength of the holding frame 330 cannot withstand this stress, the holding frame 330 will be distorted, and as a result, the mask body 310 will also be distorted.

To address such a problem, a laminated structure is used in which a plurality of base materials used as the holding frame are laminated in order to increase the strength of the holding frame 330 . When the substrates are laminated, an adhesive layer is used to connect the substrates. However, even if the holding frame 330 having such a laminated structure is used, the strength of the holding frame 330 cannot be sufficiently maintained, and the problem that the vapor deposition mask 300 is distorted cannot be overcome.

As a result of earnest research by the inventors regarding the cause of this problem, the cause of the distortion of the vapor deposition mask 300 having a laminated structure was identified as follows. The holding frame 330 having a laminated structure is configured by bonding a plurality of base materials with an adhesive layer. A resin material is generally used as the adhesive layer. When stress is applied to the holding frame 330 having such a laminated structure, the adhesive layer between the base materials is distorted, and as a result, the holding frame 330 is distorted. As described above, the inventors' intensive research has revealed that the reason why the strength of the holding frame 330 having a laminated structure cannot be sufficiently maintained is the distortion of the adhesive layer between the base materials. In addition, the problems shown above are problems newly discovered by the inventors' intensive research in the process of reaching the present invention, and are not problems generally known as problems of vapor deposition masks. .

[Effect of vapor deposition mask 300]
According to the vapor deposition mask 300 described in this embodiment, the second connection member 390 connects the first layer 360 and the second layer 370, so that the connection between the first layer 360 and the second layer 370 becomes stronger. Become. As a result, the strength of the holding frame 330 having a laminated structure can be sufficiently maintained, and even if a large stress is applied to the holding frame 330, distortion of the holding frame 330 can be suppressed. In addition to the side surface 365 of the first layer 360 and the side surface 375 of the second layer 370 , the first connection member 350 is connected to part of the upper surface 363 of the first layer 360 and part of the lower surface 371 of the second layer 370 . The connection strength of the first connecting member 350, the first layer 360, and the second layer 370 can be increased by contacting them. In addition, the second connection member 390 is in contact with part of the bottom surface 371 of the second layer 370 in addition to the inner wall 378 of the through-hole 377 and the top surface 363 of the first layer 360 . The connection strength between layer 360 and second layer 370 is improved. As a result, the mechanical strength of vapor deposition mask 300 is improved.

[Manufacturing method of vapor deposition mask 300]
A method for manufacturing a vapor deposition mask 300 according to an embodiment of the present invention will be described with reference to FIGS. 7 to 15. FIG. 7, 8, and 10 to 15 are cross-sectional views showing a method for manufacturing a vapor deposition mask according to one embodiment of the present invention. FIG. 9 is a plan view showing a method for manufacturing a vapor deposition mask according to one embodiment of the present invention. 7-15, both the first layer 360 and the second layer 370 are illustrated. The first layer 360 and the second layer 370 shown in the same figure can be processed with the same process or the same manufacturing method. 7 to 15 are cross-sectional views of the region shown in FIG.

As shown in FIG. 7, a release layer 420 is formed on the lower surface 361 of the rigid first layer 360 . Then, resist masks 410 (411, 413, 415, 417) are formed on the separation layer 420, the upper surface 363 of the first layer 360, the lower surface 371 of the second layer 370, and the upper surface 373 of the second layer 370. . The resist mask 411 provided over the separation layer 420 and the resist mask 413 provided over the top surface 363 have substantially the same pattern. The resist mask 415 provided on the lower surface 371 and the resist mask 417 provided on the upper surface 373 have substantially the same pattern. The release layer 420 is a layer for separating a part of the mask body 310 and the adhesive layer 460 formed on the release layer 420 from the first layer 360 in a later step. A plated layer can be used as the peeling layer 420 .

As the first layer 360 and the second layer 370, rigid substrates such as metal substrates such as stainless steel substrates, silicon substrates, glass substrates, or quartz substrates are used. For example, the plate thickness of each of the first layer 360 and the second layer 370 is 300 μm or more and 3 mm or less, preferably 500 μm or more and 2 mm or less.

A metal layer can be used as the release layer 420 . When a plated layer is used as the metal layer used for the separation layer 420, the material used for the plated layer is not particularly limited, but nickel (Ni), for example, can be used. The release layer 420 can be formed using an electrolytic plating method or an electroless plating method. When the separation layer 420 is formed by electroplating, the plating layer can be formed by energizing the first layer 360 .

The first layer 360, the second layer 370 and the release layer 420 are patterned as shown in FIG. 8 by etching the first layer 360, the second layer 370 and the release layer 420 through the resist mask 410. . A through hole 377 is formed in the second layer 370 by this patterning. Wet etching can be used as these etchings. An etchant used for wet etching can be appropriately selected according to the materials of the first layer 360 , the second layer 370 , and the separation layer 420 . By removing the resist mask 410 after the above etching, the first layer 360 and the second layer 370 as shown in FIG. 8 can be obtained.

However, the above etching may be performed by dry etching. When etching the first layer 360 , the second layer 370 , and the peeling layer 420 by dry etching, the resist mask 410 may be formed only on one of the bottom surfaces 361 and 371 or the top surfaces 363 and 373 . Alternatively, the method of patterning the first layer 360, the second layer 370, and the separation layer 420 is not limited to the etching described above, and mechanical methods such as dicing and laser processing may be used.

FIG. 9 shows the shapes of the first layer 360 and the second layer 370 after removing the resist mask 410 in plan view. The first layer 360 has a rectangular frame pattern. The second layer 370 has a rectangular frame-like pattern, and a through hole 377 is formed inside the pattern. The through holes 377 are provided along a rectangular frame-like pattern with a gap 379 interposed therebetween. The provision of the gap 379 can prevent the second layer 370 in the region inside the through-hole 377 from being separated from the second layer 370 in the region outside the through-hole 377 . The pattern of the through holes 377 is the same as the pattern of the second connecting member 390 shown in FIG.

Next, as shown in FIG. 10, an adhesive layer 440 is used to attach the patterned second layer 370 to the support substrate 450 . The adhesive layer 440 and the support substrate 450 are attached to the upper surface 373 side of the second layer 370 . The adhesive layer 440 is attached to the support substrate 450 while being pulled, and the second layer 370 is attached to the adhesive layer 440 in this state. In other words, the second layer 370 is attached to the adhesive layer 440 with tensile stress. Note that the support substrate 450 is a rigid substrate.

As the adhesive layer 440, a resin layer such as polyimide resin, acrylic resin, epoxy resin, silicone resin, fluorine resin, and siloxane resin is used. When a resin layer is used as the adhesive layer 440, the support substrate 450 and the adhesive layer 440 can be separated from each other by, for example, irradiating the adhesive layer 440 with a laser. As the adhesive layer 440, an inorganic layer such as a metal layer, a metal oxide layer, or an inorganic insulating layer may be used in addition to the resin layer.

In the state shown in FIG. 10, the adhesive layer 440 is etched using the second layer 370 as a mask. Etching of the adhesion layer 440 is performed by wet etching. However, the etching may be performed by dry etching. By peeling the support substrate 450 from the adhesive layer 440 after etching the adhesive layer 440, the structure shown in FIG. 11 is obtained. Note that the adhesive layer 440 covers the upper surface 373 of the second layer 370 . In plan view, the second layer 370 and the adhesive layer 440 shown in FIG. 11 have substantially the same pattern. However, the edge of the upper surface 373 of the second layer 370 may be exposed from the adhesive layer 440 by etching the adhesive layer 440 as described above.

Next, as shown in FIG. 12, the first layer 360 and the second layer 370 are attached together using the adhesive layer 500 . The adhesive layer 500 may be conductive or may be insulating.

Next, by etching the adhesion layer 500 in the state shown in FIG. 12, the state shown in FIG. 13 is obtained. Etching of the adhesion layer 500 is performed by wet etching. This etching exposes the upper surface 363 of the first layer 360 from the adhesive layer 500 in the region where the through hole 377 is provided. By etching the adhesive layer 500 by wet etching, etching progresses not only in the thickness direction of the adhesive layer 500 but also in the direction parallel to the main surface of the adhesive layer 500 . As a result, not only the top surface 363 of the first layer 360 but also a portion of the bottom surface 371 of the second layer 370 are exposed from the adhesive layer 500 .

Here, when the adhesive layer 500 is etched by wet etching, it is necessary to devise a method so that the adhesive layer 440 provided on the upper surface 373 of the second layer 370 is not etched. For example, adhesive layer 440 may be cured prior to etching adhesive layer 500 . Alternatively, as the adhesive layer 440, a material having high etching resistance to the etchant of the adhesive layer 500 may be used. By using different materials for the adhesive layer 440 and the adhesive layer 500, for example, the adhesive layer 440 and the adhesive layer 500 can be cured by one curing treatment (eg, heat treatment).

After forming the structure shown in FIG. 13, the mask main body 310 provided with the openings 311 and 315 is attached to the release layer 420 formed on the first layer 360 via the adhesive layer 460 (see FIG. 14). ). Although not shown, in this step, the mask main body 310 is attached to the adhesive layer 460 while being attached to the support substrate. The mask main body 310 may have conductivity, but if there is a means for supplying electricity to grow the connection member 510 without passing through the mask main body 310 during the plating process described above, the mask main body 310 can be It may be insulating. The mask body 310 is attached to the support substrate while being pulled. In other words, the mask body 310 is attached to the supporting substrate while tensile stress is generated in the mask body 310 . A resist mask 480 is formed on the surface of the mask main body 310 on the first layer 360 side. The resist mask 480 is provided in a region inside the mask body 310 . The resist mask 480 is also formed in the region where the opening 311 is provided. On the other hand, resist mask 480 exposes the regions where openings 315 are formed. The resist mask 480 is provided to protect areas other than the area where the first connecting members 350 are formed in subsequent steps.

In the state shown in FIG. 14, the first connection member 350 and the second connection member 390 can be formed as shown in FIG. 15 by electroplating (or electroplating) in which at least the mask body 310 is energized. . That is, the first connection member 350 and the second connection member 390 are plated layers. The first connecting member 350 is formed in contact with the upper surface of the mask body 310 , the inside of the opening 315 , the side surface 365 of the first layer 360 and the side surface 375 of the second layer 370 . The first connection member 350 is also formed on the top surface 363 of the first layer 360 and the bottom surface 371 of the second layer 370 exposed from the adhesive layer 500 . The second connection member 390 is formed in contact with the upper surface 363 of the first layer 360 exposed from the adhesive layer 500 and the inner wall 378 of the through hole 377 in the region where the through hole 377 is provided. The second connection member 390 is also formed on the lower surface 371 of the second layer 370 exposed from the adhesive layer 500 in the region where the through hole 377 is provided.

When the first connection member 350 and the second connection member 390 are formed by electroplating, since the adhesive layer 440 is provided on the upper surface 373 of the second layer 370, the first connection member 350 and the second connection member 390 are formed on the upper surface 373. No two connecting members 390 are formed.

Note that the first connection member 350 and the second connection member 390 may be formed by electroless plating. Also, the first connection member 350 and the second connection member 390 may be made of a material other than the plated layer. For example, the first connection member 350 and the second connection member 390 may contain solder or resin.

From the state shown in FIG. 15, the release layer 420, the adhesive layer 460, and the region outside the opening 315 of the mask body 310 are peeled downward, and the adhesive layer 440 is peeled upward, thereby forming the vapor deposition mask 300 shown in FIG. can do. In other words, the deposition mask 300 can be formed by removing the release layer 420 and the adhesive layer 460 to expose the bottom surface 361 of the first layer 360 and the top surface 373 of the second layer 370 .

With the above configuration, the first layer 360 and the second layer 370 are connected by both the first connecting member 350 and the second connecting member 390, so that the rigidity of the holding frame 330 can be increased. .

<Second embodiment>
A vapor deposition mask according to an embodiment of the present invention will be described with reference to FIG. FIG. 16 is a cross-sectional view of a vapor deposition mask according to one embodiment of the invention. A vapor deposition mask 300A shown in FIG. 16 is similar to the vapor deposition mask 300 shown in FIG. 360 and the shape of the second connection member 390 are different.

As shown in FIG. 16, a recess 367A is provided in the first layer 360A in a region overlapping the through hole 377A in plan view. The recess 367A does not penetrate the first layer 360A in the thickness direction of the first layer 360A. That is, the recess 367A is a bottomed hole provided in the first layer 360A. In a cross-sectional view, the width of the recess 367A is larger than the width of the through hole 377A and the width of the opening provided in the adhesive layer 500A, and the lower surface of the adhesive layer 500A is exposed from the first layer 360A. That is, in plan view, the size of the recess 367A is larger than the size of the through hole 377A. In other words, in plan view, the outer periphery of the recess 367A is located outside the outer periphery of the through hole 377A. The second connection member 390A is provided not only on the inner wall 378A of the through hole 377A but also inside the recess 367A.

In a plan view, only a portion of the outer circumference of the recess 367A may protrude outside the outer circumference of the through hole 377A. However, in a plan view, the outer circumference of the recess 367A and the outer circumference of the through hole 377A may match, or the outer circumference of the concave section 367A may be positioned inside the outer circumference of the through hole 377A.

As described above, according to the deposition mask 300A according to the present embodiment, the second connecting member 390A and the holding frame 330A (the first layer 360A and the second The connection strength with the layer 370A) is improved. As a result, the mechanical strength of the vapor deposition mask 300A is improved.

A vapor deposition mask 300A shown in FIG. 16 can be formed by bonding a first layer 360A having recesses 367A formed thereon to a second layer 370A in the process shown in FIG. The formation of the recess 367A in the first layer 360A may be performed, for example, in the process shown in FIG. 7, after the process shown in FIG. 7, and before the process shown in FIG. good. Alternatively, the formation of the recess 367A may be performed after the process shown in FIG.

<Third Embodiment>
A vapor deposition mask according to an embodiment of the present invention will be described with reference to FIG. FIG. 17 is a cross-sectional view of a vapor deposition mask according to one embodiment of the invention. A vapor deposition mask 300B shown in FIG. 17 is similar to the vapor deposition mask 300 shown in FIG. It differs from the vapor deposition mask 300 in that it is roughened. The second connecting member 390B contacts the roughened top surface 363B and the inner wall 378B. In other words, the second connecting member 390B is in contact with the roughened surfaces of the first layer 360B and the second layer 370B.

As described above, according to the vapor deposition mask 300B according to the present embodiment, the second connection member 390B and the second connection member 390B are in contact with the roughened surfaces of the first layer 360B and the second layer 370B. The connection strength with the holding frame 330B (the first layer 360B and the second layer 370B) is improved. As a result, the mechanical strength of vapor deposition mask 300B is improved.

The vapor deposition mask 300B shown in FIG. 17 can be formed by roughening the upper surface 363B and the inner wall 378B in the process shown in FIG. In this manner, the upper surface 363B and the inner wall 378B may be roughened in the same step, or may be roughened in different steps.

<Fourth Embodiment>
A vapor deposition mask according to an embodiment of the present invention will be described with reference to FIGS. 18 and 19. FIG. FIG. 18 is a top view of a vapor deposition mask according to one embodiment of the invention. FIG. 19 is a cross-sectional view of a vapor deposition mask according to one embodiment of the invention.

As shown in FIGS. 18 and 19, the vapor deposition mask 300C is provided with a first connecting member 350C and a mask main body 310C at each window portion of a grid-shaped holding frame 330C. Each mask body 310C is provided with a plurality of openings 311C. As for the details of each aperture 311C, a plurality of apertures 311pC are arranged in accordance with the pixel pitch of the display device, similar to those described with reference to FIGS. 4 and 5 illustrate the configuration in which one opening is provided in the holding frame 330 and the first connecting member 350 and the mask body 310 are provided inside the opening. A plurality of openings are provided in the frame 330C, and a first connection member 350C and a mask main body 310C are provided inside each opening.

The second connection member 390C surrounds the plurality of first connection members 350C via slits 391C, similarly to the second connection member 390 shown in FIG. Furthermore, the second connection members 390C are also provided between adjacent first connection members 350C. In other words, when focusing on each of the first connection members 350C, each first connection member 350C is surrounded by the second connection members 390C via the slits 391C.

FIG. 19 is a cross-sectional view of a vapor deposition mask according to one embodiment of the invention. The cross-sectional view shown in FIG. 19 is a cross-sectional view taken along line B-B' in FIG. As shown in FIG. 19, the first connection member 350C is provided along the edge of the mask body 310C above the mask body 310C. The first connection member 350C protrudes from the end of the mask body 310C toward the outside of the mask body 310C, and further protrudes outside the mask body 310C in a direction away from the mask body 310C (upward). The holding frame 330C is provided above the upper surface of the mask body 310C.

<Fifth Embodiment>
In the present embodiment, a method of manufacturing the display device 200 that applies the thin film forming method using the vapor deposition masks 300 to 300C described in the first to fourth embodiments will be described. As the display device 200 according to the fifth embodiment, a method of manufacturing an organic EL display device in which a plurality of pixels each having an organic light emitting element (hereinafter referred to as a light emitting element) are formed on an insulating substrate 202 will be described. The contents described in the first and second embodiments may be omitted.

[Arrangement of array substrate]
FIG. 20 is a top view of a display device according to an embodiment of the invention. The display device 200 has an insulating substrate 202 on which a plurality of pixels 204 and a driver circuit 206 (a gate side driver circuit 206a and a source side driver circuit 206b) for driving the pixels 204 are provided. The insulating substrate 202 is, for example, a glass substrate or a resin substrate. A plurality of pixels 204 are arranged periodically to define a display area 205 . As will be described later, each pixel 204 is provided with a light emitting element 260 .

The driving circuit 206 is arranged in a peripheral area around the display area 205 . Various wiring (not shown) formed of a patterned conductive film extends from the display area 205 and the drive circuit 206 to one side of the insulating substrate 202 and is exposed to the surface near the edge of the insulating substrate 202. A terminal 207 is formed. These terminals 207 are electrically connected to a flexible printed circuit board (FPC) not shown. Various signals for driving the display device 200 are input to the driver circuit 206 and the pixel 204 through the terminal 207 . Although not shown, a driving IC having an integrated circuit may be further mounted together with the driving circuit 206 or instead of a part thereof.

FIG. 21 is a schematic cross-sectional view across two adjacent pixels 204 (204a and 204b). A pixel circuit is formed in each pixel 204 . The configuration of the pixel circuit is arbitrary, and FIG. 21 shows a drive transistor 210, a storage capacitor 230, an additional capacitor 250, and a light emitting element 260. FIG.

Each element included in the pixel circuit is provided on the insulating substrate 202 via the undercoat 208 . The driving transistor 210 includes a semiconductor layer 212 , a gate insulating layer 214 , a gate electrode 216 , a source electrode 220 and a drain electrode 222 . The gate electrode 216 is arranged to cross at least part of the semiconductor film 212 with the gate insulating film 214 interposed therebetween. The semiconductor film 212 has a drain region 212a, a source region 212b, and a channel 212c. The channel 212c is a region where the semiconductor film 212 and the gate electrode 216 overlap. A channel 212c is provided between the drain region 212a and the source region 212b.

The capacitor electrode 232 exists in the same layer as the gate electrode 216 and overlaps the drain region 212a with the gate insulating film 214 interposed therebetween. An interlayer insulating film 218 is provided on the gate electrode 216 and the capacitor electrode 232 . Openings reaching the source region 212b and the drain region 212a are formed in the interlayer insulating film 218 and the gate insulating film 214, respectively. A source electrode 220 and a drain electrode 222 are positioned inside these openings. The drain electrode 222 overlaps the capacitor electrode 232 with the interlayer insulating film 218 interposed therebetween. A storage capacitor 230 is formed by the drain region 212a, the capacitor electrode 232, the gate insulating film 214 therebetween, and the capacitor electrode 232, the drain electrode 222, and the interlayer insulating film 218 therebetween.

A planarization film 240 is provided on the drive transistor 210 and the storage capacitor 230 . The planarizing film 240 has an opening reaching the drain electrode 222 . A connection electrode 242 covering the opening and part of the upper surface of the planarizing film 240 is provided so as to be in contact with the drain electrode 222 . An additional capacitance electrode 252 is provided on the planarization film 240 . A capacitive insulating film 254 is provided to cover the connection electrode 242 and the additional capacitive electrode 252 . The capacitive insulating film 254 exposes a portion of the connection electrode 242 in the opening of the planarizing film 240 . Thereby, the pixel electrode 262 and the drain electrode 222 of the light emitting element 260 are electrically connected through the connection electrode 242 . An opening 256 is provided in the capacitive insulating film 254 . A partition wall 258 provided on the capacitive insulating film 254 and the planarization film 240 are in contact with each other through an opening 256 . With this configuration, impurities in the planarizing film 240 can be removed through the openings 256, and the reliability of the pixel circuits and the light emitting elements 260 can be improved. Formation of the connection electrode 242 and the opening 256 is optional.

A pixel electrode 262 is provided on the capacitor insulating film 254 so as to cover the connection electrode 242 and the additional capacitor electrode 252 . A capacitive insulating film 254 is provided between the additional capacitive electrode 252 and the pixel electrode 262 . This structure constitutes the additional capacitance 250 . A pixel electrode 262 is shared by the additional capacitor 250 and the light emitting element 260 . A partition wall 258 is provided on the pixel electrode 262 to cover the edge of the pixel electrode 262 . The structure from the insulating substrate 202 and the undercoat 208 to the partition walls 258 is sometimes called an array substrate. Since the array substrate can be manufactured by applying known materials and methods, the description thereof is omitted.

[Configuration of Light Emitting Element 260]
As shown in FIG. 21, the light emitting element 260 includes a pixel electrode 262, an EL layer 264, and a counter electrode 272. As shown in FIG. The EL layer 264 and the counter electrode 272 are provided so as to cover the pixel electrode 262 and the partition wall 258 . In the example shown in FIG. 21 , the EL layer 264 has a hole injection/transport layer 266 , a light emitting layer 268 (light emitting layers 268 a and 268 b ), and an electron injection/transport layer 270 . The hole injection/transport layer 266 and the electron injection/transport layer 270 are commonly provided for the plurality of pixels 204 and shared by the plurality of pixels 204 . Similarly, a counter electrode 272 covers multiple pixels 204 and is shared by multiple pixels 204 . On the other hand, the light emitting layer 268 is individually provided for each pixel 204 .

As the structure and material of each of the pixel electrode 262, the counter electrode 272, and the EL layer 264, known ones can be applied. For example, the EL layer 264 may have various functional layers such as a hole blocking layer, an electron blocking layer, and an exciton blocking layer in addition to the above structure.

The structure of the EL layer 264 may be the same among the plurality of pixels 204, or part of the structure may be different between adjacent pixels 204. FIG. For example, pixels 204 may be configured such that adjacent pixels 204 have different structures or materials for light-emitting layers 268, while other layers have the same structure.

[Method for Forming Light Emitting Element 260]
The EL layer 264 and the counter electrode 272 can be formed using the vapor deposition masks of the first and second embodiments. A method for forming the EL layer 264 and the counter electrode 272 will be described below with reference to FIGS. In these figures, an EL layer 264 and a counter electrode 272 are formed on the partition wall 258 and the pixel electrode 262. FIG. However, during deposition of the EL layer 264 and the counter electrode 272 , the deposition source 112 is placed under the insulating substrate 202 and the insulating substrate 202 is placed so that the deposition region faces the deposition source 112 . That is, the partition walls 258 and the pixel electrodes 262 are arranged closer to the deposition source 112 than the insulating substrate 202 is.

As shown in FIGS. 22 and 23, a hole injection/transport layer 266 is formed on the array substrate by vapor deposition. Since the hole injection/transport layer 266 is shared by all the pixels 204 , the vapor deposition mask 300 used for vapor deposition of the hole injection/transport layer 266 has one opening 311 overlapping the entire display area 205 . Although details are omitted, the vapor deposition mask 300 is arranged between the array substrate and the vapor deposition source 112 so that the opening 311 overlaps the display region 205, and the material contained in the hole injection/transport layer 266 is vaporized in the vapor deposition source 112. A hole injection/transport layer 266 is thus formed.

Next, a light emitting layer 268 is formed on the hole injection/transport layer 266 . When full-color display is performed, a plurality of pixels 204a emitting red light, pixels 204b emitting blue light, and pixels 204c emitting green light are arranged in the display region 205, respectively. Note that the pixels 204a, 204b, and 204c are simply referred to as pixels 204 when not particularly distinguished. When the pixels 204 are arranged in a matrix, usually the pixels 204 with different emission colors are arranged periodically in order. The light-emitting layer 268 is formed by different processes for each emission color. For example, when forming a pixel 204a that emits red light, as shown in FIG. 300 are placed.

In this way, the vapor deposition mask 300 provided with the opening 311 is placed at a position where the opening 311 overlaps with the pixel 204a and the non-opening portions overlap with the other pixels 204b and 204c so that the lower surface 148 of the vapor deposition mask 300 is closer to the insulating substrate 202 than the upper surface 150. (FIGS. 24 and 25) and vapor-deposit the material of the light-emitting layer 268a on the pixel 204a. Thereby, a light-emitting layer 268a is selectively formed on the pixel electrode 262 of the pixel 204a (FIG. 26). In FIG. 26, the vapor deposition mask 300 (mask body 310) is arranged so as to be in contact with the hole injection/transport layer 266 during vapor deposition, but the vapor deposition mask 300 may be arranged so as to be in contact with the partition walls 258, It may be arranged away from the partition wall 258 and the hole injection/transport layer 266 .

Next, similarly to the formation of the light emitting layer 268a, the light emitting layer 268b is formed. As shown in FIGS. 27 and 28, the vapor deposition mask 300 is positioned so that the lower surface 148 of the vapor deposition mask 300 is closer to the insulating substrate 202 than the upper surface 150 at positions where the opening 311 overlaps the pixel 204b and the non-opening portions overlap the other pixels 204a and 204c. (FIG. 27) and vapor-deposit the material of the light-emitting layer 268b on the pixel 204b. Thereby, a light-emitting layer 268b is selectively formed on the pixel electrode 262 of the pixel 204b (FIG. 28). Formation of the light-emitting layer 268c on the pixel 204c is also performed in a similar manner.

Next, an electron injection/transport layer 270 and a counter electrode 272 are formed. Since the electron injection/transport layer 270 and the counter electrode 272 are shared by all the pixels 204 , they can be formed using the vapor deposition mask 300 similar to the vapor deposition of the hole injection/transport layer 266 . Thereby, the structure shown in FIG. 21 can be obtained. Although not shown, on the counter electrode 272, an optical adjustment layer and a polarizing plate for adjusting the light from the light emitting layer 268, and a protective film and a counter substrate for protecting the light emitting element 260 may be provided.

Each of the embodiments described above as embodiments of the present invention can be implemented in combination as appropriate as long as they do not contradict each other. In addition, based on the display device of each embodiment, a person skilled in the art may appropriately add, delete, or change the design of components, or add, omit, or change the conditions of a process. As long as it has the gist, it is included in the scope of the present invention.

In this specification, the case of an EL display device is mainly exemplified as a disclosed example, but as other application examples, other self-luminous display devices, liquid crystal display devices, or electronic paper type displays having electrophoretic elements, etc. devices, and any flat panel type display device. In addition, it can be applied without any particular limitation, from small to medium size to large size.

Even if there are other effects that are different from the effects brought about by the aspects of each embodiment described above, those that are obvious from the description of this specification or those that can be easily predicted by those skilled in the art are of course It is understood that it is provided by the present invention.

10: Vapor deposition apparatus 100: Vapor deposition chamber 102: Load lock door 104: Vapor-deposited substrate 108: Holder 110: Moving mechanism 112: Vapor deposition source 114: Shutter 120: Storage container 122: Heating unit 124: Deposition holder 126: Heater 128: Metal plate 130: Opening 132: Guide plate 148: Lower surface 150: Upper surface 160: Critical surface 200: Display device 202: Insulating substrate 204: Pixel 205: display area 206: drive circuit 207: terminal 208: undercoat 210: drive transistor 212: semiconductor film 212a: drain region 212b: source region 212c: channel 214: gate insulating film 216: Gate electrode 218: Interlayer insulating film 220: Source electrode 222: Drain electrode 230: Storage capacitance 232: Capacitance electrode 240: Flattening film 242: Connection electrode 250: Additional capacitance 252: Addition Capacitance electrode 254: Capacitance insulating film 256: Opening 258: Partition wall 260: Light emitting element 262: Pixel electrode 264: EL layer 266: Hole injection/transport layer 268: Light emitting layer 270: Electron injection/ Transport layer 272: Counter electrode 300: Deposition mask 310: Mask body 311, 315: Opening 313: Second outer edge 330: Holding frame 331, 361, 371: Lower surface 333, 363, 373: Upper surface 335, 365, 375: side surface 350: first connection member 353: first outer edge 360: first layer 367A: recess 370: second layer 377: through hole 378: inner wall 379: gap 390: Second connection member 391: Slit 393: First shape 395: Second shape 397: Third shape 410, 411, 413, 415, 417, 480: Resist mask 420: Release layer 440, 460, 500: adhesive layer, 450: support substrate

Claims (7)

a thin-film mask body provided with a plurality of openings;
a holding frame provided around the mask body and having a laminated structure having a first layer and a second layer;
a first connection member provided between the mask body and the holding frame;
a second connecting member that connects the first layer and the second layer;
has
one of the first layer and the second layer has a through hole penetrating through one of the first layer and the second layer in the thickness direction thereof;
The second connecting member is in contact with the inner wall of the through-hole and the other surface of the first layer and the second layer, and extends from the inner wall of the through-hole to the other surface of the first layer and the second layer. Vapor deposition mask that continuously covers up to The other of the first layer and the second layer has a recess that does not penetrate the other of the first layer and the second layer in the thickness direction thereof in a region overlapping the through hole in a plan view,
2. The vapor deposition mask according to claim 1, wherein said second connection member is in contact with said recess. a thin-film mask body provided with a plurality of openings;
a holding frame provided around the mask body and having a first layer and a second layer;
a first connection member that connects the mask body and the holding frame;
a second connecting member that connects the first layer and the second layer;
has
The first layer has a through hole penetrating the first layer in its thickness direction,
The vapor deposition mask, wherein the second connection member connects an inner wall of the through hole and a surface of the second layer exposed by the through hole. the second layer has a recess that does not penetrate the other of the second layers in its thickness direction in a region that overlaps the through hole in plan view;
4. The vapor deposition mask according to claim 3, wherein said second connection member is in contact with said recess. 5. The vapor deposition mask according to claim 1, wherein said first connection member and said second connection member are made of the same material. 6. The vapor deposition mask according to claim 1, wherein said first connection member and said second connection member are plated layers. 7. The mask according to any one of claims 1 to 6, wherein a first outer edge of the first connecting member in a region in contact with the holding frame is outside a second outer edge of the mask body in a region in contact with the first connecting member in plan view. The vapor deposition mask according to any one.

Images