JP7837536B2 - Vapor deposition mask and its manufacturing method - Google Patents

Description

This disclosure relates to a vapor deposition mask and a method for manufacturing the same.

In recent years, organic electroluminescent display devices (hereinafter referred to as organic EL displays) that use organic electroluminescent elements (hereinafter referred to as organic EL elements) as light-emitting elements have become known. An organic EL element has an anode electrode, a cathode electrode, and a layer containing an organic electroluminescent material (hereinafter referred to as the organic EL material) placed between these electrodes (hereinafter referred to as the "organic EL layer"). The organic EL layer includes functional layers such as a light-emitting layer, an electron transport layer, and a hole transport layer. By applying a voltage to the anode electrode and the cathode electrode, and allowing a current to flow between them, the organic EL element emits light.

Typically, in the manufacturing process of organic EL displays, vacuum deposition is used to form the organic EL layer. In vacuum deposition, a deposition mask is brought close to the substrate to be processed, and the organic EL material is deposited onto the substrate through the deposition mask. The deposition mask has multiple openings. The organic EL material, heated and vaporized by a heater, passes through these openings to reach and deposit on the substrate. This allows for the selective formation of the organic EL layer at positions corresponding to the multiple openings in the deposition mask.

Vapor deposition masks can be divided into two types: fine metal masks (FMMs), which form aperture patterns using etching, and electrofine forming masks (EFMs), which form aperture patterns using electroforming technology. For example, Patent Document 1 discloses a method for forming a mask portion with a high-resolution aperture pattern using electroforming technology, and then fixing the formed mask portion to a frame portion using electroforming technology.

Japanese Patent Publication No. 2017-210633

In the conventional technique described above, a mask pattern (electroformed layer) is formed on a mold made of a metal plate, a frame is bonded to the mask pattern, and then the frame and mask pattern are connected via a metal layer. Subsequently, by peeling the mold from the mask pattern, a vapor deposition mask is completed in which the frame and mask pattern are connected via a metal layer. Typically, the mask pattern includes an opening pattern portion and a peripheral portion that surrounds the opening pattern portion and is in contact with the metal layer. When forming such a mask pattern by electroforming, there was a problem in that the thickness of the metal film decreased from the center of the opening pattern portion towards the periphery, resulting in a decrease in the strength of the peripheral portion.

One embodiment of this disclosure aims to provide a vapor deposition mask that ensures uniform film thickness of the mask pattern and prevents a decrease in strength at the periphery.

One embodiment of this disclosure aims to provide a method for manufacturing a vapor-deposited mask that ensures uniform film thickness of the mask pattern and prevents a decrease in strength at the periphery.

A vapor deposition mask according to one embodiment of the present disclosure comprises a mask body including a first aperture region having a plurality of first apertures and a second aperture region adjacent to the first aperture region and having a plurality of second apertures; a retaining frame for supporting the mask body; and a connecting portion for connecting the mask body and the retaining frame. At least a portion of the second aperture region overlaps with the connecting portion, and the difference between the aperture ratio in the second aperture region and the aperture ratio in the first aperture region is 20% or less.

A method for manufacturing a vapor deposition mask according to one embodiment of the present disclosure includes: forming a resist mask on a support substrate via a base metal layer with a predetermined pattern; forming a first metal layer containing an opening pattern corresponding to the predetermined pattern and a dummy metal layer surrounding the first metal layer in a region of the base metal layer where the resist mask is not formed, by electroforming; placing a retaining frame on the dummy metal layer; forming a second metal layer connecting the first metal layer and the retaining frame by electroforming; and removing the support substrate and the dummy metal layer. The first metal layer includes a first opening region containing a plurality of first openings and a second opening region adjacent to the first opening region containing a plurality of second openings. At least a portion of the second opening region overlaps with the second metal layer, and the difference between the opening ratio of the second openings in the second opening region and the opening ratio of the first openings in the first opening region is 20% or less.

This is a schematic plan view of a deposition mask according to one embodiment of the present disclosure. Figure 1 is an enlarged view of the PA region. This is a cross-sectional view along line A1-A2 shown in Figure 1. This figure shows a method for manufacturing a vapor-deposited mask according to one embodiment of the present disclosure. This figure shows a method for manufacturing a vapor-deposited mask according to one embodiment of the present disclosure. This figure shows a method for manufacturing a vapor-deposited mask according to one embodiment of the present disclosure. This figure shows a method for manufacturing a vapor-deposited mask according to one embodiment of the present disclosure. This figure shows a method for manufacturing a vapor-deposited mask according to one embodiment of the present disclosure. This figure shows a method for manufacturing a vapor-deposited mask according to one embodiment of the present disclosure. This figure shows a method for manufacturing a vapor-deposited mask according to one embodiment of the present disclosure. This figure shows a method for manufacturing a vapor-deposited mask according to one embodiment of the present disclosure. This figure shows a method for manufacturing a vapor-deposited mask according to one embodiment of the present disclosure. This is a schematic plan view of a vapor deposition mask relating to a modified example of the present disclosure. This is a cross-sectional view along line B1-B2 shown in Figure 13.

The embodiments of the present invention will be described below with reference to the drawings. However, the present invention can be implemented in many different forms, and is not limited to the embodiments described below. The drawings may schematically represent the width, thickness, shape, etc., of each part compared to the actual embodiments in order to clarify the explanation; however, these are merely examples and do not limit the interpretation of the present invention. Furthermore, in this specification and each drawing, elements similar to those described above in previously shown drawings are denoted by the same reference numerals (or numbers followed by a, b, A, B, etc.), and detailed explanations may be omitted as appropriate. Additionally, the letters "First," "Second," etc., attached to each element are convenient indicators used to distinguish each element and have no further meaning unless specifically explained.

In this specification, when a component or region is described as being "above (or below)" another component or region, unless otherwise specified, this includes not only cases where it is directly above (or directly below) the other component or region, but also cases where it is above (or below) the other component or region, that is, cases where another component is included between them above (or below) the other component or region.

Furthermore, in this specification, expressions such as "α includes A, B, or C," "α includes any one of A, B, and C," and "α includes one selected from the group consisting of A, B, and C" do not exclude cases where α includes multiple combinations of A through C, unless otherwise explicitly stated. Moreover, these expressions do not exclude cases where α includes other elements.

[First Embodiment]
[Structure of the vapor deposition mask 100]
The configuration of a deposition mask according to one embodiment of this disclosure will be described with reference to Figures 1 to 3.

Figure 1 is a schematic plan view of a deposition mask 100 according to one embodiment of this disclosure. Figure 2 is an enlarged view of the PA region shown in Figure 1. Figure 3 is a cross-sectional structure along A1-A2 shown in Figure 1. The configuration of the deposition mask 100 shown in Figures 1 to 3 is an example, and the configuration of the deposition mask 100 is not limited to the configurations shown in Figures 1 to 3.

As shown in Figures 1 to 3, the deposition mask 100 includes a mask body 110, a retaining frame 108 surrounding the mask body 110, and a connecting portion 106 connecting the mask body 110 and the retaining frame 108.

The mask body 110 includes a plurality of first opening regions 104, a second opening region 105 adjacent to the first opening regions 104, and a non-opening region 101 provided between adjacent first opening regions 104. The first opening regions 104 and the second opening regions 105 are provided with a plurality of openings 103. The first opening regions 104 are provided with a plurality of first openings 103a, and the second opening regions 105 are provided with a plurality of second openings 103b.

The enlarged insert in Figure 1 shows a portion 104A of the first opening region 104. The enlarged insert in Figure 2 shows a portion 105A of the second opening region 105. As shown in the enlarged inserts in Figures 1 and 2, the multiple openings 103 are arranged within a predetermined pattern region to form an opening pattern. In the first opening region 104, the first opening 103a forms the first opening pattern 114. In the second opening region 105, the second opening 103b forms the second opening pattern 115.

In the vapor deposition mask 100, the holding frame 108 corresponds to the size of the mother glass substrate. The first aperture region 104 is positioned to correspond to the display areas of individual display panels fabricated within the mother glass substrate. The first aperture 103a in the first aperture region 104 is an aperture corresponding to a pixel located in the display area of the display panel, and is positioned to correspond to the arrangement of pixels within the display panel. The second aperture region 105 is positioned adjacent to the first aperture region 104 and along the holding frame 108. The second aperture 103b is an aperture located in a non-emitting region adjacent to the display area. The mask body 110 is connected to the connection portion 106 at the second aperture region 105 and held by the holding frame 108.

As shown in Figure 3, the mask body 110 is made of a plate-like member, and the multiple openings 103 are through holes penetrating the plate-like member. As will be described in detail later, the mask body 110 is formed using a metal material. A retaining frame 108 is provided to support the mask body 110 in a flat, plate-like manner. The retaining frame 108 includes a main frame 108a surrounding the mask body 110, and a grid-like frame 108b extending from the main frame 108a in a first direction D1 and a second direction D2 to hold the mask body 110.

The connecting portion 106 connects the mask body 110 and the retaining frame 108, fixing them together. The connecting portion 106 contacts the mask body 110 at the second opening region 105 of the mask body 110, and also contacts the side surface of the main frame 108a of the retaining frame 108. The connecting portion 106 includes a connecting portion 106a that connects the grid-like frame 108b to the mask body 110.

A deposition mask 100 according to one embodiment of this disclosure is used in the manufacturing process of a display panel, specifically in the process of forming an organic EL element. More specifically, it is used in the process of forming the light-emitting layer of an organic EL element using a vacuum deposition method. In the process of forming the light-emitting layer, the deposition region on the mother glass substrate side is arranged to align with the first aperture pattern 114 of the first aperture region 104 of the mask body, and the deposition material passes through a plurality of first apertures 103a, depositing the deposition material in the deposition region.

The mask body 110 and the connecting portion 106 are formed using zero-valent metal materials such as nickel (Ni), copper (Cu), titanium (Ti), and chromium (Cr). The material compositions of the mask body 110 and the connecting portion 106 may be identical. Similarly, the retaining frame 108 is also formed using zero-valent metal materials such as nickel (Ni), iron (Fe), cobalt (Co), chromium (Cr), and manganese (Mn). For example, the material of the retaining frame 108 may be an alloy containing iron (Fe) and chromium (Cr), or an alloy of iron (Fe), nickel (Ni), and manganese (Mn), such as Invar, and the alloy may also contain carbon (C).

A typical vapor deposition mask includes an aperture region (aperture pattern area) with an aperture pattern corresponding to the pixel arrangement of a display panel, and a peripheral region (peripheral area) that surrounds the aperture region, is positioned along the retaining frame, and does not contain any apertures. This peripheral region is supported by the retaining frame via a connecting portion. In the manufacturing process of the vapor deposition mask, the mask body is formed on a support substrate by electroforming via a seed layer. However, because there are no apertures, the surface area of the electrode corresponding to the peripheral region is larger than the surface area of the electrode corresponding to the aperture region. Therefore, the amount of metal ions consumed on the electrode corresponding to the peripheral region is significantly greater than the amount consumed on the electrode corresponding to the aperture region. Consequently, the amount of metal ions supplied cannot keep up with the amount consumed, resulting in a shortage of metal ions in the peripheral region, which could compromise the strength of the mask body in that region.

Therefore, the inventors conceived of providing an opening pattern (second opening pattern 115) formed from multiple openings (second opening 103b) in a region corresponding to the peripheral region of a typical vapor deposition mask, in the mask body formation process of the mask body 110, so that the overall film thickness of the mask body 110 becomes substantially uniform.

In one embodiment of this disclosure, the mask body 110 includes a first opening region 104 including a first opening pattern 114 provided corresponding to the light-emitting area of the display panel, and a second opening region 105 adjacent to the first opening region 104 and provided along at least the main frame 108a of the retaining frame 108. The second opening region 105 includes a second opening pattern 115 containing a plurality of second openings 103b. In the mask body 110, at least a portion of the second opening region 105 is provided so as to overlap the connecting portion 106. The connecting portion 106 fills a portion of the second openings 103b in the second opening region 105, connecting the mask body 110 and the retaining frame 108, and fixing them to each other.

The second opening region 105 may include a second opening region 105a provided along the grid-like frame 108b. At least a portion of the second opening region 105a may overlap with the connecting portion 106a, and the second opening 103b provided in at least a portion of the second opening region 105a may be filled by the connecting portion 106a.

The difference between the aperture ratio of the second aperture 103b in the second aperture region 105 and the aperture ratio of the first aperture 103a in the first aperture region 104 is preferably 20% or less. In other words, the aperture ratio of the second aperture 103b in the second aperture region 105 is preferably 0.8 times or more and 1.2 times or less than the aperture ratio of the first aperture 103a in the first aperture region 104. If the difference between the aperture ratio of the second aperture 103b in the second aperture region 105 and the aperture ratio of the first aperture 103a in the first aperture region 104 is 20% or less, the film thickness of the entire mask body 110 can be made substantially uniform. "Substantially uniform" means that the difference in thickness between the thickest and thinnest parts relative to the thickness of the thickest part is 15% or less, and more preferably 10% or less. In this disclosure, "aperture ratio" refers to the ratio of aperture area per unit area.

In the mask body 110, a non-opening region 101 is provided between adjacent first opening regions 104. Although no opening is provided in the non-opening region 101, its surface area is smaller than that of the peripheral region of a typical deposition mask. Therefore, the amount of metal ions consumed per unit area of the electrode corresponding to the non-opening region 101 during the formation of the mask body 110 does not differ significantly from the amount of metal ions consumed per unit area of the electrodes corresponding to the first opening region 104 and the second opening region 105. Consequently, in this embodiment, the overall film thickness of the mask body 110, including the non-opening region 101, is substantially uniform as described above.

As described above, in this embodiment, a second aperture region 105 is provided in the region corresponding to the peripheral region of a typical deposition mask, including a second aperture pattern 115 formed from multiple second apertures 103b. By providing the second aperture region 105 in the mask body 110, the amount of metal ions consumed during the electroforming process of the deposition mask 100 becomes substantially uniform throughout the entire mask body 110. As a result, a mask body 110 with a substantially uniform film thickness can be formed.

As shown in Figures 1 to 3, the deposition mask 100 may further include a metal layer 107. The metal layer 107 overlaps with the remaining portion of the second opening region 105 that does not overlap with the connecting portion 106, and fills the remaining portion of the second opening 103b of the second opening region 105. The thickness of the metal layer 107 may be thicker than the thickness of the mask body 110. The metal layer 107 improves the strength of the second opening region 105 where the second opening 103b is provided.

The metal layer 107 may include a metal layer 107a that overlaps with the remaining portion of the second opening region 105a that does not overlap with the connecting portion 106a. The metal layer 107a may fill the second opening 103b provided in the second opening region 105a. The thickness of the metal layer 107a may be thicker than the thickness of the mask body 110. The metal layer 107a improves the strength of the second opening region 105a where the second opening 103b is provided.

[Method for manufacturing vapor deposition mask 100]
The method for manufacturing the deposition mask 100 of this embodiment will be described in detail with reference to the drawings. Figures 4 to 12 show the method for manufacturing the deposition mask 100. Figures 4 to 12 show one end of the deposition mask 100 in the second direction D2.

First, as shown in Figure 4, a seed layer (underlying metal layer) 210 and a resist pattern 220 are formed on the support substrate 200. In this embodiment, a glass substrate is used as the support substrate 200. However, the support substrate 200 is not limited to a glass substrate; it may also be a metal substrate or a ceramic substrate.

The seed layer 210 is a metal layer provided for growing the plating layer. In this embodiment, a nickel alloy (specifically, Invar) is used as the material for the first metal layer 230, which will be described later. Therefore, a metal layer containing copper (Cu) is used as the seed layer 210. However, other metal layers that can function as a seed layer may be used, not limited to this example. As mentioned above, when a metal substrate is used as the support substrate 200, the first metal layer (plating layer) 230 can be grown directly on the surface of the support substrate 200. Therefore, the seed layer 210 can be omitted.

The seed layer 210 can be formed using sputtering or CVD (Chemical Vapor Deposition). The thickness of the seed layer 210 should be sufficient to ensure the necessary conductivity for growing the first metal layer (plating layer) 230, as described later. For example, the thickness of the seed layer 210 can be in the range of 50 nm to 500 nm.

The resist pattern 220 is formed by applying a photosensitive resin material onto the seed layer 210, followed by exposure and development (etching) processes. The resist pattern 220 is selectively formed in the first aperture region 104, the second aperture region 105, and the region where the dummy metal layer 240 (described later) is provided, as shown in Figures 1 to 3. The resist pattern 220 may also be formed using a dry film resist (DFR).

The resist pattern 220 includes a first resist pattern 220a and a second resist pattern 220b. The first resist pattern 220a corresponds to a first opening pattern 114 provided in the first opening region 104 of the mask body 110. The second resist pattern 220b corresponds to a second opening pattern 115 provided in the second opening region 105 of the mask body 110. Preferably, the opening ratio of the first resist pattern 220a and the opening ratio of the second opening pattern 115 are 20% or less.

Next, as shown in Figure 5, the first metal layer 230 and the dummy metal layer 240 are formed in the area where the resist pattern 220 is not placed. In this embodiment, the surface of the seed layer 210 may be pre-treated with a release agent before forming the first metal layer 230 and the dummy metal layer 240. For example, Nikkanon Tack (registered trademark) from Nippon Chemical Industries, Ltd. can be used as the release agent. The dummy metal layer 240 is formed so as to surround the first metal layer 230 in a plan view. Since the first metal layer 230 and the dummy metal layer 240 are formed simultaneously, they can have the same composition and thickness.

In this embodiment, the first metal layer 230 and the dummy metal layer 240 may be metal layers made of a nickel alloy (specifically, Invar). In this embodiment, electroplating is performed by passing an electric current through the seed layer 210 in an aqueous solution containing metal ions of the nickel alloy. When the seed layer 210 is energized, the first metal layer 230 and the dummy metal layer 240 are formed on the surface of the seed layer 210. The thickness of the formed first metal layer 230 and dummy metal layer 240 can be adjusted by controlling the electroplating time. In this embodiment, for example, the thickness of the first metal layer 230 and the dummy metal layer 240 is adjusted to a range of 3 μm to 20 μm (preferably 5 μm to 10 μm). Specifically, in this embodiment, the thickness of the first metal layer 230 and the dummy metal layer 240 may be 5 μm. In this embodiment, an example is shown in which the first metal layer 230 and the dummy metal layer 240 are formed using Invar. However, the example is not limited to this; other metal materials suitable for electroplating may be used.

Next, as shown in Figure 6, the resist pattern 220 is removed. Removing the resist pattern 220 forms a mask pattern composed of the first metal layer 230. The openings 103a and 103b formed by removing the first metal layer 230 and the resist pattern 220 correspond to the first opening pattern 114 in the first opening region 104 and the second opening pattern 115 in the second opening region 105 of the mask body 110.

Next, as shown in Figure 7, a resist pattern 250 is formed on the mask body 110, which includes the first aperture region 104 and the second aperture region 105. The resist pattern 250 is formed by applying a photosensitive resin material to the mask body 110, followed by exposure and development (etching) processes. The area where the resist pattern 250 is formed is the area excluding the area where the connecting portion 106 is provided and the dummy metal layer 240 on which the retaining frame 108 is placed. The resist pattern 250 may also be formed using a dry film resist (DFR).

Next, as shown in Figure 8, the retaining frame 108 is placed on the dummy metal layer 240. The retaining frame 108 is bonded to the dummy metal layer 240 using the adhesive force of an adhesive layer (e.g., an unexposed dry film resist) not shown. The retaining frame 108 is positioned to surround the mask body 110. Although not shown, the grid-like frame 108b of the retaining frame 108 is positioned between adjacent first opening regions 104 on the mask body 110. A resist pattern 252, which functions as a mask, may be pre-formed on the upper surface of the retaining frame 108. The resist pattern 252 may be formed using a dry film resist (DFR).

Next, as shown in Figure 9, a second metal layer 106 (connecting portion 106) is formed in the area where the resist patterns 250 and 252 are not located. The second metal layer 106 is formed using electroplating. The second metal layer 106 extends from the side surface of the retaining frame 108 to a portion of the mask body 110. Specifically, the second metal layer 106 overlaps at least a portion of the second opening region 105 of the mask body 110, filling a portion of the second opening 103b in the second opening region 105. Although not shown, the second metal layer 106 is also formed extending from the grid-like frame 108b of the retaining frame 108 to a portion of the mask body 110.

In this embodiment, the second metal layer 106 is formed continuously from the side surface of the retaining frame 108 to the top of the mask body 110. This allows the retaining frame 108 and the mask body 110 to be connected via the second metal layer 106.

In this embodiment, the second metal layer 106 is formed by a plating layer made of a nickel alloy (specifically, Invar). In this embodiment, the thickness of the second metal layer 106 is adjusted to a range of 50 μm to 200 μm. While this embodiment shows an example where the second metal layer 106 is formed of Invar, the embodiment is not limited to this example; other metal materials suitable for electroplating may be used.

After the formation of the second metal layer 106, the resist patterns 250 and 252 are removed. Then, as shown in Figure 10, a new resist pattern 254 is formed. The resist pattern 254 is formed by applying a photosensitive resin material, followed by exposure and development (etching) treatments. The resist pattern 254 is formed on the holding frame 108, on the second metal layer 106, and on the mask body 110, excluding the remaining portion of the second opening region 105 that is not superimposed on the second metal layer 106. The resist pattern 254 only needs to superimpose on at least a portion of the second metal layer 106; it does not need to superimpose on the entire layer. For example, the resist pattern 254 may superimpose on at least a portion of the second metal layer 106 located on the side of the holding frame 108 that is close to the main frame 108a.

Next, as shown in Figure 11, a third metal layer 107 (metal layer 107) is formed in the area where the resist pattern 254 is not placed. The third metal layer 107 is formed using electroplating. Specifically, the third metal layer 107 is selectively formed on the seed layer 210 that is not covered by the resist pattern 254. The third metal layer 107 is formed to fill the second opening 103b in the second opening region 105, which is not superimposed on the second metal layer 106. Although not shown, if the resist pattern 254 is superimposed on a portion of the second metal layer 106 located on the side adjacent to the main frame 108a of the retaining frame 108, the third metal layer 107 may be formed on the remaining portion of the second metal layer 106 that is not superimposed on the resist pattern 254.

In this embodiment, the third metal layer 107 is formed by a plating layer (metal layer) made of a nickel alloy (specifically, Invar). In this embodiment, the thickness of the third metal layer 107 is adjusted to be greater than 3 μm and less than 200 μm, preferably in the range of 20 μm to 80 μm. Relatively speaking, the third metal layer 107 is adjusted to be thicker than the mask body 110 and thinner than the second metal layer 106. Considering the stress difference between the mask body 110 and the second metal layer 106, it is preferable to make it slightly thinner than the midpoint between the two. In this embodiment, an example is shown in which the third metal layer 107 is formed of Invar, but this is not limited to this example, and other metal materials that can be used for electroplating may be used.

After the formation of the third metal layer 107, the resist pattern 254 is removed as shown in Figure 12, and then the support substrate 200 is removed. Specifically, after fixing the holding frame 108 by adsorption or the like, the support substrate 200 is removed by mechanically peeling it from the mask body 110, holding frame 108, and connecting portion 106. At this time, the seed layer 210 and dummy metal layer 240 are removed along with the support substrate 200. After the above manufacturing process, the deposition mask 100 shown in Figures 1 and 2 is completed.

[Variation 1]
In the embodiments described with reference to Figures 1 to 3, an example was described in which the second opening region 105, which includes a plurality of second openings 103b, includes a second opening region 105a provided along the grid-like frame 108b of the retaining frame 108. However, embodiments of the present disclosure are not limited thereto.

Figure 13 is a schematic plan view of a modified deposition mask 100A according to the present disclosure. Figure 14 is a cross-sectional structure along B1-B2 shown in Figure 13. In the deposition mask 100A shown in Figures 13 and 14, components identical or similar to those described with respect to the deposition mask 100 in Figures 1 to 3 are indicated by the same reference numerals, and redundant explanations are omitted.

The deposition mask 100A shown in Figures 13 and 14 differs from the deposition mask 100 shown in Figures 1 to 3 in the arrangement of the second aperture region and the metal layer, specifically in the second aperture region 105 and the metal layer 107. The following description will primarily focus on the second aperture region and the metal layer in the deposition mask 100A.

The mask body 110a of the deposition mask 100A, like the deposition mask 100, includes a first opening region 104, a second opening region 205, and a non-opening region 101 provided between adjacent first opening regions 104. The first opening region 104 is provided with a plurality of first openings 103a, and the second opening region 205 is provided with a plurality of second openings 103b.

Unlike the deposition mask 100 according to the first embodiment shown in Figures 1 to 3, in the mask body 110a of the deposition mask 100A, the second opening region 205 may be provided so as to follow only the main frame 108a of the holding frame 108. In other words, the second opening region 205 does not have to be provided so as to follow the grid-like frame 108b.

In the mask body 110a of the deposition mask 100A, the portion corresponding to the grid-like frame 108b of the retaining frame 108 is a non-opening region 101. The surface area of the non-opening region 101 corresponding to the grid-like frame 108b is smaller than the surface area of the peripheral region of a typical deposition mask. Therefore, the amount of metal ions consumed per unit area of the electrode corresponding to the non-opening region 101 during the formation of the mask body 110a is not significantly different from the amount of metal ions consumed per unit area of the electrode corresponding to the first opening region 104 and the second opening region 205. Consequently, in the mask body 110a, it is not necessary to provide an opening in the portion corresponding to the grid-like frame 108b of the retaining frame 108.

In such cases, the deposition mask 100A may further include a metal layer 207. The metal layer 207 overlaps with the remaining portion of the second opening region 205 that does not overlap with the connection portion 106, and fills the remaining portion of the second opening 103b of the second opening region 205.

During the manufacturing process of such a vapor deposition mask 100A, when the mask body 110a is formed by electroforming, the amount of metal ions consumed is substantially uniform throughout the entire mask body 110a. Therefore, similar to the vapor deposition mask 100 according to the first embodiment, a mask body 110a with a substantially uniform overall film thickness can be formed.

[Modified example 2]
In the deposition mask 100 according to the embodiment described with reference to Figures 1 to 3, and in the deposition mask 100A according to Modification 1, the connecting portion 106 is provided so as to overlap a part of the second opening region 105 of the mask body 110. However, the embodiments of this disclosure are not limited thereto. For example, the connecting portion 106 may be provided so as to overlap the entire second opening region 105 of the mask body 110. Specifically, the connecting portion 106 may be provided so as to fill the second opening 103b in the entire second opening region 105. In this case, the metal layer 107 may be omitted.

The embodiments and modifications described above as one embodiment of this disclosure can be combined as appropriate, insofar as they do not contradict each other. Furthermore, any configurations based on the embodiments, with additions, deletions, or design changes made by those skilled in the art, or with additions, omissions, or changes in processes, are also included within the scope of the invention, as long as they retain the essence of this disclosure.

Even if the effects and benefits are different from those brought about by the embodiments described above, those that are clear from the description of this embodiment or that can be easily predicted by a person skilled in the art are naturally considered to be brought about by one embodiment of this disclosure.

100, 100A... Evaporation mask, 101... Non-opening region, 103... Opening, 103a... First opening, 103b... Second opening, 104... First opening region, 105, 205... Second opening region, 106... Connection part, 107, 207... Metal layer, 108... Holding frame, 110, 110a... Mask body, 114... First opening pattern, 115... Second opening pattern

Claims (8)

A mask body including a first opening region having multiple first openings and a second opening region adjacent to the first opening region having multiple second openings,
A retaining frame that supports the mask body,
A connecting part that connects the mask body and the retaining frame,
A metal layer adjacent to the aforementioned connection portion,
Equipped with,
At least a portion of the second opening region overlaps with the connecting portion,
The remaining portion of the second opening region is superimposed on the metal layer,
A vapor deposition mask in which the difference between the aperture ratio in the second aperture region and the aperture ratio in the first aperture region is 20% or less. The deposition mask according to claim 1, wherein the connecting portion fills the second opening in at least a portion of the second opening region. The deposition mask according to claim 2 , wherein the metal layer fills the remaining portion of the plurality of second openings. The vapor deposition mask according to claim 3, wherein the thickness of the metal layer is greater than the thickness of the mask body. A resist mask is formed on a support substrate with a predetermined pattern formed on it via an underlying metal layer.
In the area of the base metal layer where the resist mask is not formed, a first metal layer including an opening pattern corresponding to the predetermined pattern and a dummy metal layer surrounding the first metal layer are formed by electroforming.
A retaining frame is placed on the dummy metal layer,
A second metal layer connecting the first metal layer and the retaining frame is formed by electroforming.
By electroforming, a third metal layer adjacent to the second metal layer is formed.
Remove the support substrate and the dummy metal layer.
Includes,
The first metal layer includes a first opening region containing a plurality of first openings, and a second opening region adjacent to the first opening region and containing a plurality of second openings.
At least a portion of the second opening region is superimposed on the second metal layer,
The remaining portion of the second opening region is superimposed on the third metal layer,
A method for manufacturing a vapor deposition mask, wherein the difference between the aperture ratio of the second aperture in the second aperture region and the aperture ratio of the first aperture in the first aperture region is 20% or less. The method for manufacturing a vapor deposition mask according to claim 5, wherein the second metal layer fills the second opening in at least a portion of the second opening region. The method for manufacturing a vapor deposition mask according to claim 6, wherein the third metal layer fills the remaining portion of the plurality of second openings in the first metal layer. The method for manufacturing a vapor deposition mask according to claim 7, wherein the thickness of the third metal layer is greater than the thickness of the first metal layer.