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JP7162238B2 - Solid-state imaging device - Google Patents
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JP7162238B2 - Solid-state imaging device - Google Patents

Solid-state imaging device Download PDF

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JP7162238B2
JP7162238B2 JP2018125685A JP2018125685A JP7162238B2 JP 7162238 B2 JP7162238 B2 JP 7162238B2 JP 2018125685 A JP2018125685 A JP 2018125685A JP 2018125685 A JP2018125685 A JP 2018125685A JP 7162238 B2 JP7162238 B2 JP 7162238B2
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solid
state imaging
imaging device
sealing resin
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JP2020005217A (en
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大輔 櫻井
正三 越智
清一 糸井
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Panasonic Intellectual Property Management Co Ltd
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Priority to CN201880060819.3A priority patent/CN111108744B/en
Priority to PCT/JP2018/036629 priority patent/WO2019077980A1/en
Priority to EP18867857.7A priority patent/EP3700196B1/en
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Description

本開示は、電子内視鏡等に設けられる小型の固体撮像装置に関するものである。 The present disclosure relates to a compact solid-state imaging device provided in an electronic endoscope or the like.

従来から医療分野において、細長い挿入部を体腔内に挿入することにより、体腔内臓器等を観察したり、処置具チャンネル内に挿通された処置具を用いて各種治療処置したりできる医療用の内視鏡が提供されている。また、工業分野において、ボイラ、タービン、エンジン、化学プラントなどの内部の傷や腐蝕などを観察又は検査できる工業用の内視鏡が提供されている。 BACKGROUND ART Conventionally, in the medical field, by inserting an elongated insertion portion into a body cavity, a medical endoscope has been used that allows observation of internal organs in a body cavity, and various therapeutic treatments using a treatment instrument inserted through a treatment instrument channel. A viewing scope is provided. In the industrial field, industrial endoscopes are provided that can observe or inspect internal flaws, corrosion, etc. of boilers, turbines, engines, chemical plants, and the like.

このような内視鏡(電子内視鏡)には、例えば、挿入部の先端部に電荷結合素子(CCDと略記)などの固体撮像素子や電子部品を備えた固体撮像装置を内蔵したものがある。固体撮像装置は、撮像対象物からの反射光を受光して光電変換し、光電変換した信号を、信号ケーブルを介して、モニタ装置を備えた情報処理装置に伝送する。情報処理装置は、固体撮像装置から受信した信号を処理し、固体撮像装置で撮像された撮像対象物を、モニタ装置にカラー表示する。 Such an endoscope (electronic endoscope) includes, for example, a solid-state imaging device such as a charge-coupled device (abbreviated as CCD) or a solid-state imaging device equipped with electronic components at the distal end of the insertion section. be. A solid-state imaging device receives reflected light from an object to be imaged, photoelectrically converts the light, and transmits the photoelectrically converted signal to an information processing device having a monitor device via a signal cable. The information processing device processes a signal received from the solid-state imaging device, and displays an object captured by the solid-state imaging device in color on a monitor device.

固体撮像装置を内蔵した内視鏡は、例えば、狭く曲がりくねった管腔内等に挿入されるため、挿入部の細径化が望まれている。また、固体撮像装置は、小回りがきき、操作性の良い内視鏡を実現するため、小型化、小径化が望まれている。 An endoscope with a built-in solid-state imaging device is inserted into, for example, a narrow and tortuous lumen, and therefore, it is desired to reduce the diameter of the insertion portion. In addition, solid-state imaging devices are desired to be compact and small in diameter in order to realize an endoscope that can turn in a small radius and have good operability.

特許文献1には、内視鏡の先端部に配置される固体撮像装置が開示されている。図5は、特許文献1に記載の固体撮像装置の断面図であり、図6は、特許文献1の固体撮像装置の平面図である。 Patent Literature 1 discloses a solid-state imaging device arranged at the distal end of an endoscope. FIG. 5 is a cross-sectional view of the solid-state imaging device described in Patent Document 1, and FIG. 6 is a plan view of the solid-state imaging device described in Patent Document 1. As shown in FIG.

特許文献1に記載の固体撮像装置では、固体撮像素子101の受光面上にカバーガラス102が接着され、受光面に形成された突起電極2bに、フレキシブル回路基板103のリード104が接続されている。また、特許文献1の固体撮像装置では、カバーガラス102の周辺部と、固体撮像素子101及びフレキシブル回路基板103のリード104の接続部分とが、第2封止樹脂5で封止されている。特許文献1の固体撮像装置によれば、封止樹脂によって形成される封止固定部を極力小さくすることにより、全体の構成を小型化できるとされる。 In the solid-state imaging device described in Patent Document 1, a cover glass 102 is adhered onto the light-receiving surface of a solid-state image sensor 101, and leads 104 of a flexible circuit board 103 are connected to projecting electrodes 2b formed on the light-receiving surface. . In addition, in the solid-state imaging device of Patent Document 1, the peripheral portion of the cover glass 102 and the connecting portions of the leads 104 of the solid-state imaging element 101 and the flexible circuit board 103 are sealed with the second sealing resin 5 . According to the solid-state imaging device disclosed in Patent Document 1, the size of the entire structure can be reduced by minimizing the size of the sealing and fixing portion formed by the sealing resin.

また、特許文献2には、撮像ユニットの小型化を可能にし、電子内視鏡等の先端部の一層の細径化を図ることのできる固定撮像装置が開示されている。 Further, Japanese Patent Laid-Open No. 2002-200002 discloses a fixed image pickup device that enables the downsizing of the image pickup unit and further reduction in the diameter of the distal end portion of an electronic endoscope or the like.

図7は、特許文献2に記載の固体撮像装置の斜視図である。特許文献2に記載の固体撮像装置において、固体撮像素子18の外周部に設けられたボンディングパッド25と、固体撮像素子18の背面に結合された垂直向きの基板20aに設けられたボンディングパッド26とがフレキシブル回路基板29により接続され、基板20aの背面に水平向きの基板20bを結合し、基板20aに対して後退する基板20bの段差面に電子部品19が実装されると共に、基板20bの段差面の端部に形成した端子部27に信号ケーブル30が接続されている。特許文献2の形態によれば、固体撮像素子18の投影面積内に基板20a,20bと、基板20bに実装された電子部品19及び信号ケーブルの端子部27が納まるようにでき、内視鏡先端部の一層の細径化ができるとされる。 FIG. 7 is a perspective view of the solid-state imaging device described in Patent Document 2. FIG. In the solid-state imaging device disclosed in Patent Document 2, bonding pads 25 provided on the outer periphery of the solid-state imaging device 18 and bonding pads 26 provided on a vertically oriented substrate 20a coupled to the back surface of the solid-state imaging device 18. are connected by a flexible circuit board 29, and a horizontally oriented board 20b is coupled to the rear surface of the board 20a. A signal cable 30 is connected to a terminal portion 27 formed at the end of the. According to the form of Patent Document 2, the substrates 20a and 20b, the electronic component 19 mounted on the substrate 20b, and the terminal portion 27 of the signal cable can be accommodated within the projected area of the solid-state imaging device 18, and the tip of the endoscope can be accommodated. It is said that it is possible to further reduce the diameter of the part.

特開2001-17389号公報Japanese Unexamined Patent Application Publication No. 2001-17389 特開2000-199863号公報JP-A-2000-199863

内視鏡は、固体撮像素子の高解像度化と更なる小型化が求められる。 Endoscopes are required to have solid-state imaging devices with higher resolution and further miniaturization.

特許文献1では、封止樹脂105によって形成された封止固定部106の範囲が広範になることによって、固体撮像装置の小型化が阻まれていた。例えば、固体撮像装置を固体撮像素子101の受光面側から見ると、封止固定部106が固体撮像素子101の外縁からはみ出す。そのため、固体撮像装置の受光面側から見た大きさは、封止固定部106の大きさにより決まり、更なる小型化を阻む。 In Japanese Unexamined Patent Application Publication No. 2002-100001, the area of the sealing fixing portion 106 formed by the sealing resin 105 is widened, which hinders the miniaturization of the solid-state imaging device. For example, when the solid-state imaging device is viewed from the light-receiving surface side of the solid-state imaging device 101 , the sealing fixing portion 106 protrudes from the outer edge of the solid-state imaging device 101 . Therefore, the size of the solid-state imaging device viewed from the light-receiving surface side is determined by the size of the sealing fixing portion 106, which prevents further miniaturization.

また、特許文献2の方法によれば、固体撮像素子18と回路基板20とはフレキシブル回路基板29によって接続しなければならず、固体撮像素子の受光面側から見た大きさは、固体撮像素子18よりも大きくなり、更なる小型化を阻む問題がある。 Further, according to the method of Patent Document 2, the solid-state imaging device 18 and the circuit board 20 must be connected by the flexible circuit board 29, and the size of the solid-state imaging device viewed from the light-receiving surface side is the same as that of the solid-state imaging device. 18, which poses a problem that prevents further miniaturization.

本開示は、高解像度化が進む固体撮像素子において、更なる小型化された固体撮像装置を提供することを目的とする。 An object of the present disclosure is to provide a further miniaturized solid-state imaging device in a solid-state imaging device with increasing resolution.

上記課題を解決するため、受光面と、上記受光面と反対の面に形成された再配線層と、を備えた固体撮像素子と、上記固体撮像素子に固定されるメイン基板と、上記固体撮像素子の再配線層に設けられた接続端子と上記メイン基板上の接続端子とを電気的に接続する突起電極と、上記突起電極を覆う第1封止樹脂と、上記メイン基板上に搭載された少なくとも1個の電子部品と、を含み、上記メイン基板は、ベース部と上記ベース部に積層された突起部とを有する固体撮像装置を用いる。 In order to solve the above problems, a solid-state imaging device having a light-receiving surface and a rewiring layer formed on a surface opposite to the light-receiving surface, a main substrate fixed to the solid-state imaging device, and the solid-state imaging device a projecting electrode for electrically connecting a connection terminal provided in a rewiring layer of an element and a connection terminal on the main substrate; a first sealing resin covering the projecting electrode; and at least one electronic component, wherein the main substrate has a base portion and a protrusion laminated on the base portion.

本開示によれば、より小型化した固体撮像装置を提供することができる。 According to the present disclosure, it is possible to provide a more compact solid-state imaging device.

本開示の実施の形態における固体撮像装置の構成を模式的に示す断面図1 is a cross-sectional view schematically showing the configuration of a solid-state imaging device according to an embodiment of the present disclosure; FIG. 本開示の実施の形態における固体撮像装置の構成を模式的に示す側面図1 is a side view schematically showing the configuration of a solid-state imaging device according to an embodiment of the present disclosure; FIG. 本開示の実施の形態における固体撮像装置の構成を模式的に示す平面図1 is a plan view schematically showing the configuration of a solid-state imaging device according to an embodiment of the present disclosure; FIG. (a1)~(d2)本発明の実施の形態における固体撮像装置の製造工程を模式的に示す断面図(a1) to (d2) Cross-sectional views schematically showing manufacturing steps of the solid-state imaging device according to the embodiment of the present invention. 本発明の実施の形態のメイン基板の形状を模式的に示す断面図FIG. 2 is a cross-sectional view schematically showing the shape of the main substrate according to the embodiment of the present invention; 本発明の実施の形態の固体撮像装置の構造を模式的に示す断面図1 is a cross-sectional view schematically showing the structure of a solid-state imaging device according to an embodiment of the present invention; 本発明の実施の形態のメイン基板の形状を模式的に示す断面図FIG. 2 is a cross-sectional view schematically showing the shape of the main substrate according to the embodiment of the present invention; 特許文献1に記載の固体撮像装置の断面図Cross-sectional view of the solid-state imaging device described in Patent Document 1 特許文献1に記載の固体撮像装置の平面図A plan view of the solid-state imaging device described in Patent Document 1 特許文献2に記載の固体撮像装置の斜視図A perspective view of the solid-state imaging device described in Patent Document 2.

以下、本発明の実施の形態を、図面を参照して説明する。
(固体撮像装置の構造)
図1Aは、本開示の実施の形態における固体撮像装置の構成を模式的に示す断面図である。
BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(Structure of solid-state imaging device)
FIG. 1A is a cross-sectional view schematically showing the configuration of a solid-state imaging device according to an embodiment of the present disclosure.

<固体撮像素子3>
図1Aに示すように、本発明の実施の形態における固体撮像装置は、矩形の固体撮像素子3を有している。図1Bは、図1Aの側面図であり、本開示の実施の形態における固体撮像装置の構成を模式的に示す側面図である。
<Solid-state image sensor 3>
As shown in FIG. 1A, the solid-state imaging device according to the embodiment of the present invention has a rectangular solid-state imaging device 3. As shown in FIG. FIG. 1B is a side view of FIG. 1A, and is a side view schematically showing the configuration of the solid-state imaging device according to the embodiment of the present disclosure.

固体撮像素子3の一方の表面には、受光面3aを、もう一方の表面には再配線層3cを有している。 The solid-state imaging device 3 has a light receiving surface 3a on one surface and a rewiring layer 3c on the other surface.

固体撮像素子3の両面の配線同士は、貫通ビア3bによって電気的に接続されている。ここで、固体撮像素子3とは、光を検出して電気信号、画像に変換する素子であり、例えばCCDイメージセンサやCMOSイメージセンサなどである。固体撮像素子3は、例えば、Si、InGaAs、InP、InAsなどの基材から成る。 Wirings on both surfaces of the solid-state imaging device 3 are electrically connected to each other by through vias 3b. Here, the solid-state imaging device 3 is a device that detects light and converts it into an electric signal and an image, such as a CCD image sensor or a CMOS image sensor. The solid-state imaging device 3 is made of a base material such as Si, InGaAs, InP, and InAs, for example.

受光面3aの画素数は、例えば100~400万画素であり、画素サイズは例えば1~2μmである。 The number of pixels on the light receiving surface 3a is, for example, 1 to 4 million pixels, and the pixel size is, for example, 1 to 2 μm.

貫通ビア3bは、金属膜または金属めっきなどから成り、例えばCu、W、Auなどが用いられる。 The through vias 3b are made of a metal film, metal plating, or the like, such as Cu, W, Au, or the like.

ここで、再配線層3cの内部は、3次元に配線され、貫通ビア3bと再配線層3c表面の複数個の接続端子9とは電気的に接続されている。そのため、受光面3aで受けた1画素ないしは複数画素の電気信号を処理した後、貫通ビア3bを介して、再配線層3cを通り、接続端子9に伝えることができる。ここで、再配線層3cは例えばCu、Al、Auなどの金属膜から成る配線層と例えばエポキシ、ポリイミド、アクリル、SiN、SiO2などの絶縁層とから成る。 Here, the inside of the rewiring layer 3c is wired three-dimensionally, and the through vias 3b and the plurality of connection terminals 9 on the surface of the rewiring layer 3c are electrically connected. Therefore, after processing an electrical signal of one or more pixels received by the light receiving surface 3a, it can be transmitted to the connection terminal 9 through the rewiring layer 3c via the through via 3b. Here, the rewiring layer 3c is composed of a wiring layer made of a metal film such as Cu, Al or Au and an insulating layer such as epoxy, polyimide, acryl, SiN or SiO2.

接続端子9は、円または多角形形状の例えばAu、Al、Cuなどの金属膜から成る。 The connection terminal 9 is made of a circular or polygonal metal film such as Au, Al, or Cu.

固体撮像素子3の受光面3aには、透明かつ直方体形状のカバーガラス1が配置されており、カバーガラス1は接着剤2によって固体撮像素子3に固定されている。ここで、カバーガラス1は、例えば、ホウケイ酸、石英、サファイア、水晶などの屈折率が1.3~1.8の透明材料が用いられる。接着剤2は、例えばアクリル、エポキシ、シリコーンなどの紫外線硬化ないしは熱硬化または紫外線・熱硬化併用の透過率90%以上かつ屈折率が1.3~1.8の透明材料である。固体撮像素子にカバーガラスを貼り付けることにより、組立工程において、埃や異物が直接受光面に付着するのを防ぐことができるだけでなく、使用環境下において水分の侵入、異物の付着を防ぐことができる。 A transparent rectangular parallelepiped cover glass 1 is arranged on the light receiving surface 3 a of the solid-state image sensor 3 , and the cover glass 1 is fixed to the solid-state image sensor 3 with an adhesive 2 . Here, for the cover glass 1, a transparent material having a refractive index of 1.3 to 1.8, such as borosilicate, quartz, sapphire, or crystal, is used. The adhesive 2 is, for example, a transparent material such as acrylic, epoxy, silicone, etc., which has a transmittance of 90% or more and a refractive index of 1.3 to 1.8. Attaching a cover glass to the solid-state imaging device not only prevents dust and foreign matter from adhering directly to the light-receiving surface during the assembly process, but also prevents moisture from entering and foreign matter from adhering in the operating environment. can.

<メイン基板8>
また、固体撮像素子3の再配線層3cに対向するように、メイン基板8が配置されている。メイン基板8は、少なくとも2段から成る多段基板である。メイン基板8には、直方体の突起部8aと、突起部8aより大きな直方体のベース部8bとから成る。両者は積層体、または、一体物である。突起部8a上面、ベース部8bの上面と側面、と裏面には、それぞれ接続端子14、接続端子15、接続端子16を備え、それぞれの接続端子間は、メイン基板8の内部や表面の3次元配線・ビアにより電気的に接続されている。
<Main board 8>
A main substrate 8 is arranged so as to face the rewiring layer 3c of the solid-state imaging device 3 . The main board 8 is a multistage board consisting of at least two stages. The main substrate 8 includes a rectangular parallelepiped projection 8a and a rectangular parallelepiped base 8b larger than the projection 8a. Both are laminates or one piece. A connection terminal 14, a connection terminal 15, and a connection terminal 16 are provided on the upper surface of the protrusion 8a, the upper surface, the side surface, and the rear surface of the base portion 8b, respectively. They are electrically connected by wiring and vias.

ここで、メイン基板8は、固体撮像素子3から出力された電気信号端子と図示しない外部接続機器に繋ぐためのケーブルとを、コンデンサ、コイル、抵抗とを接続するための中継基板である。 Here, the main board 8 is a relay board for connecting electric signal terminals output from the solid-state imaging device 3 and cables for connecting to externally connected devices (not shown) with capacitors, coils, and resistors.

メイン基板8は、例えば、アルミナ、ガラスなどから成るセラミック多層基板または、ガラスエポキシ、アラミドなどから成る有機多層基板である。メイン基板8上の接続端子は、焼成導電接着剤やスパッタ膜へのめっき膜などから成る。 The main substrate 8 is, for example, a ceramic multilayer substrate made of alumina, glass, or the like, or an organic multilayer substrate made of glass epoxy, aramid, or the like. The connection terminals on the main board 8 are made of a sintered conductive adhesive, a plating film on a sputter film, or the like.

メイン基板8の突起部8a上面には複数個の接続端子11が、固体撮像素子3の接続端子9と対向する位置に複数個設けられており、接続端子11と接続端子9とは突起電極10によって電気的に接続されている。ここで、突起電極10は、例えば、Au、Cu、はんだ、AuSn、導電性接着剤、ナノペースト、めっきなどから成る。 A plurality of connection terminals 11 are provided on the upper surface of the protrusion 8a of the main substrate 8 at positions facing the connection terminals 9 of the solid-state imaging device 3. are electrically connected by Here, the projecting electrodes 10 are made of, for example, Au, Cu, solder, AuSn, conductive adhesive, nanopaste, plating, or the like.

さらに、固体撮像素子3とメイン基板8との間には第1封止樹脂4が設けられ、突起電極10を覆うように封止されている。第1封止樹脂4は、ベース樹脂、硬化剤、無機フィラーなどから成る熱硬化性または紫外線硬化性の一液接着剤であり、例えば、エポキシ、アクリル、シリコーン樹脂が用いられる。 Further, a first sealing resin 4 is provided between the solid-state imaging device 3 and the main substrate 8 and sealed so as to cover the projecting electrodes 10 . The first sealing resin 4 is a thermosetting or ultraviolet-curing one-liquid adhesive composed of a base resin, a curing agent, an inorganic filler, and the like. For example, epoxy, acrylic, and silicone resins are used.

一方、メイン基板8のベース部8bの上面には、接続端子14が複数形成されており、接続端子14の上には電子部品6が搭載され、接続端子14と電子部品6とは接合材料13によって電気的に接続されている。 On the other hand, a plurality of connection terminals 14 are formed on the upper surface of the base portion 8b of the main substrate 8, and the electronic components 6 are mounted on the connection terminals 14. The connection terminals 14 and the electronic components 6 are connected by a bonding material 13 are electrically connected by

電子部品6は、例えば、コンデンサ、抵抗、コイルであり、例えば0603、0402、0201などの寸法の部品が用いられる。また、接合材料13は、例えば、はんだ、AuSn、導電性接着剤などから成る。 The electronic parts 6 are, for example, capacitors, resistors, and coils, and parts with dimensions such as 0603, 0402, and 0201 are used. Also, the bonding material 13 is made of, for example, solder, AuSn, a conductive adhesive, or the like.

メイン基板8のベース部8bの側面には、ケーブル用の接続端子15が複数個形成されている。ケーブル用の接続端子15は、例えば、Au-Ni、Au-Pd-Ni、Cuなどから成り、図示しない接続ケーブルの配線と、はんだや導電性接着剤を介して電気的に接続することができる。 A plurality of connection terminals 15 for cables are formed on the side surface of the base portion 8b of the main substrate 8. As shown in FIG. The cable connection terminal 15 is made of, for example, Au--Ni, Au--Pd--Ni, Cu, etc., and can be electrically connected to wiring of a connection cable (not shown) via solder or a conductive adhesive. .

図1Cは、本開示の実施の形態における固体撮像素子3の構成を模式的に示す平面図である。 FIG. 1C is a plan view schematically showing the configuration of the solid-state imaging device 3 according to the embodiment of the present disclosure.

固体撮像素子3上に形成された受光面3aが矩形上に設けられており、受光面3aを取り囲むように外周部に貫通ビア3bが複数個配置されている。貫通ビア3bのピッチ間隔は、例えば10~100μmで設けられる。固体撮像素子3の受光面3aを覆うように設けられた接着剤2およびカバーガラス1は透明材料のため、透過して受光面及び貫通ビア3b上の電極パッドを観察することができる。 A light-receiving surface 3a formed on the solid-state imaging device 3 is provided in a rectangular shape, and a plurality of through vias 3b are arranged in the outer peripheral portion so as to surround the light-receiving surface 3a. A pitch interval of the through vias 3b is set at, for example, 10 to 100 μm. Since the adhesive 2 and the cover glass 1 provided to cover the light receiving surface 3a of the solid-state imaging device 3 are transparent materials, the light receiving surface and the electrode pads on the through vias 3b can be observed through them.

<効果>
本発明の実施の形態の構造によれば、小型かつ高画質の固体撮像素子において、固体撮像素子の投影面積内の外形寸法を保ったまま、立体方向に積層できるため、固体撮像装置を小型化することができ、内視鏡先端部の外形を小さくすることができる。
<effect>
According to the structure of the embodiment of the present invention, in a compact solid-state imaging device with high image quality, since the solid-state imaging device can be stacked in a three-dimensional direction while maintaining the external dimensions within the projected area of the solid-state imaging device, the solid-state imaging device can be miniaturized. and the outer shape of the distal end of the endoscope can be reduced.

<固体撮像装置の製造方法>
図2(a1)~(d2)は本発明の実施の形態における固体撮像装置の製造工程を模式的に示す断面図である。
<Manufacturing Method of Solid-State Imaging Device>
2A1 to 2D2 are cross-sectional views schematically showing manufacturing steps of the solid-state imaging device according to the embodiment of the present invention.

まず、図2(a1)に示すバンプ形成工程において、スタッドバンプボンダなどのバンプ形成手段を用いて、メイン基板8の突起部8aの接続端子11に突起電極10を形成する。 また、図2(b1)に示す電子部品搭載工程において、接続端子14にディスペンサやニードル転写装置などの材料供給手段を用いて、はんだペーストである接合材料13を塗布した後、電子部品6を搭載し、リフロー炉などのはんだ溶融手段を用いてはんだ接合させる。 First, in the bump forming step shown in FIG. 2(a1), a bump electrode 10 is formed on the connection terminal 11 of the protrusion 8a of the main substrate 8 using a bump forming means such as a stud bump bonder. In the electronic component mounting process shown in FIG. 2(b1), the electronic component 6 is mounted after the bonding material 13, which is solder paste, is applied to the connection terminal 14 using a material supply means such as a dispenser or a needle transfer device. Then, they are soldered using a solder melting means such as a reflow furnace.

なお、バンプ形成工程後に電子部品工程で説明したが順序はこれに限られない。電子部品工程後にバンプ形成工程を行っても構わない。 Although the electronic component process has been described after the bump forming process, the order is not limited to this. The bump formation process may be performed after the electronic component process.

さらに、図2(c1)に示す封止樹脂塗布工程において、メイン基板8の突起部8aにディスペンサやニードル転写装置などの材料供給手段を用いて、第1封止樹脂4を塗布する。ここで、予めメイン基板8の突起部8aと電子部品6との間の空隙を充填するように第2封止樹脂5を塗布しておいても構わない。第2封止樹脂5によって接着面積が増えるため、信頼性を向上することができる。 Further, in the sealing resin application step shown in FIG. 2(c1), the projection 8a of the main substrate 8 is coated with the first sealing resin 4 using a material supplying means such as a dispenser or a needle transfer device. Here, the second sealing resin 5 may be applied in advance so as to fill the gap between the protrusion 8a of the main substrate 8 and the electronic component 6. Next, as shown in FIG. Since the bonding area is increased by the second sealing resin 5, the reliability can be improved.

次に、図2(d1)に示す固体撮像素子実装工程において、加熱・加圧手段を用いて突起電極10と接続端子9を接合させながら、第1封止樹脂4を硬化させる。例えば、接合部温度は120~180℃にするとよい。また、加熱・加圧と同時に超音波を印加してもよい。低温で接合でき、弱耐熱の固体撮像素子3にも適用できるようになる。さらに、硬化炉やリフロー炉などの加熱手段を用いて加熱してもよい。複数個の固体撮像装置を一括で硬化できるようになり、生産リードタイムを短縮することができるようになる。 Next, in the step of mounting the solid-state imaging device shown in FIG. 2(d1), the first sealing resin 4 is cured while bonding the protruding electrodes 10 and the connection terminals 9 by using heating/pressurizing means. For example, the junction temperature should be 120-180.degree. Moreover, you may apply an ultrasonic wave simultaneously with heating and pressurization. It can be joined at a low temperature and can be applied to the solid-state imaging device 3 with low heat resistance. Further, heating may be performed using a heating means such as a curing furnace or a reflow furnace. A plurality of solid-state imaging devices can be cured at once, and the production lead time can be shortened.

図2(a2)~(d2)は、以上の図2(a1)~(d1)の側面図である。 FIGS. 2(a2)-(d2) are side views of FIGS. 2(a1)-(d1).

<メイン基板8の形状、切り欠き、面取り>
図3Aは本発明の実施の形態のメイン基板8の形状を模式的に示す断面図である。メイン基板8の突起部8aの少なくとも1箇所の頂点近傍には、第1切り欠き部8cが設けられている。さらに、メイン基板8のベース部の少なくとも1か所の頂点近傍には第2切り欠き部8dが設けるのが好ましい。
<Shape, Notch, and Chamfering of Main Board 8>
FIG. 3A is a cross-sectional view schematically showing the shape of the main board 8 according to the embodiment of the invention. A first notch 8c is provided in the vicinity of at least one vertex of the projection 8a of the main substrate 8. As shown in FIG. Further, it is preferable to provide a second notch portion 8d near at least one vertex of the base portion of the main substrate 8. As shown in FIG.

図3Bは、本発明の実施の形態の固体撮像装置の構造を模式的に示す断面図である。固体撮像素子3とメイン基板8の突起部8a間にある第1の第1封止樹脂4は、再配線層3cの外周部へ濡れ拡がるよりも先に、第1切り欠き部8cに沿って濡れ拡がる。このため、第1切り欠き部8cは、第1封止樹脂4で充填される。結果、第1封止樹脂4は、固体撮像素子3の側面に濡れ拡がらない。 FIG. 3B is a cross-sectional view schematically showing the structure of the solid-state imaging device according to the embodiment of the invention. The first first sealing resin 4 between the solid-state imaging device 3 and the protrusion 8a of the main substrate 8 spreads along the first notch 8c before spreading to the outer periphery of the rewiring layer 3c. It spreads wet. Therefore, the first notch 8 c is filled with the first sealing resin 4 . As a result, the first sealing resin 4 does not wet and spread on the side surfaces of the solid-state imaging device 3 .

一方、メイン基板8のベース部8bと突起部8aの間にある第2封止樹脂5は、第2切り欠き部8d内に濡れ拡がる。しかし、メイン基板8側面には濡らさない。 On the other hand, the second sealing resin 5 between the base portion 8b and the projection portion 8a of the main substrate 8 wets and spreads within the second notch portion 8d. However, the side surface of the main board 8 is not wetted.

ここで、第1封止樹脂4および第2封止樹脂5の塗布量が少なく、固体撮像素子3とメイン基板8の間に空隙が多い場合、固体撮像素子3とメイン基板8の接着強度は、突起電極10の接合強度の影響が支配的になる。そのため、固体撮像素子3とメイン基板8との間の接合強度は、組み立て工程における搬送における振動や、固体撮像装置を落下させた時の衝撃に耐えられないほど低くなり、破壊不良が発生する問題が生じる。特に、メイン基板8の突起部8a上の接続端子11の端子数が例えば数ピンから数十ピンと少ない場合や、接続端子11がメイン基板8の中央部のみに偏って配置された場合において、この問題は顕著にみられるようになる。 Here, when the application amounts of the first sealing resin 4 and the second sealing resin 5 are small and the gap between the solid-state imaging device 3 and the main substrate 8 is large, the bonding strength between the solid-state imaging device 3 and the main substrate 8 is , the influence of the bonding strength of the bump electrode 10 becomes dominant. As a result, the bonding strength between the solid-state imaging device 3 and the main substrate 8 becomes so low that it cannot withstand the vibration during transportation in the assembly process and the impact when the solid-state imaging device is dropped, resulting in failure of destruction. occurs. In particular, when the number of connection terminals 11 on the protrusion 8a of the main substrate 8 is small, for example, from several pins to several tens of pins, or when the connection terminals 11 are arranged only in the central portion of the main substrate 8, this problem may occur. The problem becomes noticeable.

以上の理由から、固体撮像素子3の外形から、封止樹脂は、はみ出さず、かつ、封止樹脂で空隙を十分満たす必要がある。 For the above reasons, it is necessary that the sealing resin does not protrude from the outer shape of the solid-state imaging device 3 and sufficiently fills the gap with the sealing resin.

<形状>
ここで、図3A、図3Bにおける第1切り欠き部8c、第2切り欠き部8dの形状について説明する。切り欠き部形状は、凹部形状であり、半ドーム形状を有する。図3A、図3Bの幅方向及び奥行き方向に対して幅は同等であり、深さは幅の1/2から同等であるとよい。
<Shape>
Here, the shapes of the first notch portion 8c and the second notch portion 8d in FIGS. 3A and 3B will be described. The notch shape is a concave shape and has a half-dome shape. It is preferable that the width is the same in the width direction and the depth direction of FIGS. 3A and 3B, and the depth is the same from 1/2 of the width.

欠け部の端面は滑らかなドーム形状であってもよく、微小の凹凸や一定の表面粗さを有しているとなおよい。表面積が増えるため封止樹脂の表面張力が大きくなり、側面への濡れ拡がりを抑える効果がある。 The end face of the chipped portion may have a smooth dome shape, and more preferably has fine unevenness or a certain surface roughness. Since the surface area increases, the surface tension of the sealing resin increases, which has the effect of suppressing wetting and spreading to the side surfaces.

さらに、深さは、メイン基板8の幅をw1、頭頂部の幅をw2、第1切り欠き部8cの幅をw4、第2切り欠き部8dの幅をw3とし、それぞれの関係を説明する。 Further, regarding the depth, w1 is the width of the main substrate 8, w2 is the width of the top of the head, w4 is the width of the first notch 8c, and w3 is the width of the second notch 8d. .

第1切り欠き部8cの幅w4は、頭頂部の幅w2の5%以上50%以下であることが望ましい。5%未満であると第1の第1封止樹脂4は再配線層3cの裏面全面に濡れ拡がり、側面まではみ出す問題が発生する。一方50%以上であると頭頂部の片側にしか第1切り欠き部8cを設けることができなくなり、左右不均一な封止樹脂のフィレット形状となる。 The width w4 of the first notch 8c is preferably 5% or more and 50% or less of the width w2 of the top of the head. If it is less than 5%, the first first sealing resin 4 wets and spreads over the entire back surface of the rewiring layer 3c, causing a problem of protruding to the side surfaces. On the other hand, if it is 50% or more, the first notch 8c can be provided only on one side of the top of the head, resulting in a fillet shape of the encapsulating resin that is non-uniform on the left and right sides.

一方、第1切り欠き部の幅w4は、広いほど第1封止樹脂4をベース部8bの方向に誘導する効果が増し、固体撮像素子3の側面への封止樹脂流動を抑制することができる。さらに、第1切り欠き部8cと頭頂部とのなす角度は30度以上60度以下であるとなおよい。第1封止樹脂4をベース部8b側に流動することが可能になる。 On the other hand, as the width w4 of the first notch increases, the effect of guiding the first sealing resin 4 toward the base portion 8b increases, and the flow of the sealing resin to the side surface of the solid-state imaging device 3 can be suppressed. can. Furthermore, it is more preferable that the angle between the first notch 8c and the top of the head is 30 degrees or more and 60 degrees or less. It becomes possible to flow the first sealing resin 4 toward the base portion 8b.

一方、第2切り欠き部の幅w3は、メイン基板8の幅w1の2%以上、30%以下であることが望ましい。2%未満であると第2封止樹脂5はメイン基板8からはみ出し、カバーガラス上面からの投影寸法が固体撮像素子3を上回り、小型化できない問題が発生する。30%より大きい場合、実装面積が確保できず、さらにメイン基板8の端面に封止樹脂が流出する問題が生じる。 On the other hand, it is desirable that the width w3 of the second notch be 2% or more and 30% or less of the width w1 of the main substrate 8. As shown in FIG. If it is less than 2%, the second sealing resin 5 protrudes from the main substrate 8, and the projected dimension from the upper surface of the cover glass exceeds the solid-state imaging device 3, which causes a problem that downsizing cannot be achieved. If it is more than 30%, the mounting area cannot be ensured, and furthermore, there arises a problem that the sealing resin flows out to the end surface of the main board 8 .

<効果>
以上のような第1切り欠き部8c、第2切り欠き部8dが少なくとも1つの角に形成されることにより、封止樹脂の拡がり、端面への濡れを防ぐことができろ。結果、固体撮像素子3の投影面積の範囲内に、第1封止樹脂4、5の拡がりを抑えられ、小型化に対応できるようになる。
<effect>
By forming the first cutout portion 8c and the second cutout portion 8d as described above in at least one corner, it is possible to prevent spreading of the sealing resin and wetting of the end face. As a result, the expansion of the first sealing resins 4 and 5 can be suppressed within the range of the projected area of the solid-state imaging device 3, and miniaturization can be achieved.

さらに、4隅の角に第1切り欠き部8c、第2切り欠き部8dを設けることにより、拡がり形状を均一化することができ、接合後の応力分布を緩和する効果もある。また、第1切り欠き部8c、第2切り欠き部8dだけでなく、辺の中間部に複数個切り欠き部を有してもよく、辺全体に切り欠きを有していても構わない。 Furthermore, by providing the first notch portion 8c and the second notch portion 8d at the four corners, the spreading shape can be made uniform, and there is also an effect of alleviating the stress distribution after bonding. In addition to the first cutout 8c and the second cutout 8d, a plurality of cutouts may be provided in the intermediate portion of the side, or the entire side may be provided with cutouts.

<切り欠き部の形成方法>
次に、第1切り欠き部8c及び第2切り欠き部8dの形成方法について述べる。
<Method of forming notch>
Next, a method for forming the first notch 8c and the second notch 8d will be described.

セラミックから成るメイン基板8を、焼成し個片化した後、耐薬品性の網に一括投入し、振動を所定の時間加える。隣接するメイン基板8が衝突し合うことにより、角部に応力が集中し破壊強度を上回る衝撃が加わる。 After the main substrate 8 made of ceramic is sintered and singulated, it is placed in a chemical-resistant mesh all at once, and vibration is applied for a predetermined period of time. When the adjacent main substrates 8 collide with each other, stress is concentrated on the corners and impact exceeding the breaking strength is applied.

そのために、角部が脱落し第1切り欠き部8c及び第2切り欠き部8dが形成される。その後、網ごとめっき浴に投入し、無電解めっきを施すことにより、接続端子にめっき形成することができる。なお、めっき浴投入時あるいは洗浄時に振動を与えて切り欠き部を形成しても構わない。生産時間を短時間化することができる。 As a result, the corners are dropped to form the first notch 8c and the second notch 8d. After that, the net is placed in a plating bath and electroless plating is applied to form a connection terminal with plating. Note that the notch portion may be formed by applying vibration when the plating bath is introduced or during cleaning. Production time can be shortened.

以上の実施の形態により、0.90~0.98mm×0.90~0.98mm、高さ0.85~0.95mmのセラミック基板を形成し、切り欠き部を形成した結果、第1切り欠き部8c及び第2切り欠き部8dの幅は、0.05~0.20mmで形成された。 According to the above embodiment, a ceramic substrate having a size of 0.90 to 0.98 mm×0.90 to 0.98 mm and a height of 0.85 to 0.95 mm was formed, and as a result of forming the notch, the first notch The width of the cutout portion 8c and the second cutout portion 8d was formed to be 0.05 to 0.20 mm.

電子部品6として0603を2個搭載し、メイン基板8の頭頂部に第1封止樹脂4および第2封止樹脂5を塗布し1.0mm×1.0mm×0.4mmの固体撮像素子3を熱圧着で実装精度±5μmで実装した結果、第1封止樹脂4および第2封止樹脂5はメイン基板8からはみ出すことなく、かつ空孔部なく封止することができ、固体撮像措置の投影面積を固体撮像素子3の寸法と同等の1.0×1.0mm以内に抑えることができた。 Two 0603 are mounted as the electronic parts 6, and the first sealing resin 4 and the second sealing resin 5 are applied to the top of the main substrate 8, and the solid-state imaging device 3 of 1.0 mm x 1.0 mm x 0.4 mm is mounted. is mounted with a mounting accuracy of ±5 μm by thermocompression, the first sealing resin 4 and the second sealing resin 5 can be sealed without protruding from the main substrate 8 and without voids. can be suppressed within 1.0×1.0 mm, which is equivalent to the size of the solid-state imaging device 3 .

上記の実施の形態における網は、複数個のメイン基板8が収納できるものとして説明したがこれに限られない。網の内部にメイン基板8が1個ずつ収納できるような間仕切りを設け、さらに間仕切りの内側に突起部や研削刃を設けてもよい。この方法によれば切り欠き部の形状をさらに安定化することができる。 Although the net in the above embodiment has been described as being able to accommodate a plurality of main substrates 8, it is not limited to this. A partition may be provided inside the net so that each main substrate 8 can be accommodated, and a protrusion or a grinding blade may be provided inside the partition. According to this method, the shape of the notch can be further stabilized.

また、網を用いずに、個片のメイン基板8を固定した後、研削、リューターなどの機械加工手段を用いて、切り欠き部を形成しても構わない。メイン基板8の材質が、破壊強度の高いガラスエポキシなどの有機基板であっても切り欠き部を形成することが可能になる。 Alternatively, after fixing the individual main substrates 8 without using a net, the notches may be formed by using a machining means such as grinding or a router. Even if the material of the main substrate 8 is an organic substrate such as glass epoxy having high breaking strength, the notch portion can be formed.

<傾斜形状のメイン基板8>
図4は本発明の実施の形態のメイン基板8の形状を模式的に示す断面図である。メイン基板8の側面が傾斜している点で上記の実施の形態とは異なる。
<Tilted Main Board 8>
FIG. 4 is a cross-sectional view schematically showing the shape of the main board 8 according to the embodiment of the invention. This embodiment differs from the above embodiment in that the side surface of the main board 8 is inclined.

メイン基板8の頭頂部の上面と側面のなす角をθ1、メイン基板8のベース部8bの上面と側面のなす角をθ2とする。 Let θ1 be the angle formed by the top surface of the top of the main substrate 8 and the side surface thereof, and θ2 be the angle formed by the top surface of the base portion 8b of the main substrate 8 and the side surface thereof.

ここで、θ1およびθ2は90°未満であるとよい。90°未満であれば、液体状態の第1封止樹脂4が外周部まで濡れ拡がった後側面に流出するのを抑制することができる。 Here, θ1 and θ2 are preferably less than 90°. If the angle is less than 90°, it is possible to prevent the first sealing resin 4 in a liquid state from spreading to the outer peripheral portion and then flowing out to the side surface.

一方、90°以上の場合、側面まで濡れ拡がり、外形が大きくなるだけでなく、ケーブル用の接続端子15のはんだ接合を妨げる問題を生じる。 On the other hand, if the angle is 90° or more, the side surfaces are wetted and spread, which not only increases the outer shape, but also causes a problem of hindering the solder joint of the connecting terminal 15 for the cable.

さらにθ2を90°未満にすることにより、ケーブル用の接続端子15にケーブルを接続する場合、はんだのフィレット量を多くしても、固体撮像素子3の投影面積内に抑えることが容易になり、小型化とケーブル接続端子の信頼性を両立できる効果もある。 Furthermore, by setting θ2 to be less than 90°, when a cable is connected to the cable connection terminal 15, even if the solder fillet amount is increased, it becomes easy to keep it within the projected area of the solid-state imaging device 3. It also has the effect of achieving both miniaturization and reliability of the cable connection terminal.

本開示の固体撮像装置は、小型の固体撮像装置として、広く利用できる。例えば、内視鏡用固体撮像装置などに利用できる。 The solid-state imaging device of the present disclosure can be widely used as a compact solid-state imaging device. For example, it can be used for a solid-state imaging device for an endoscope.

1 カバーガラス
2 接着剤
2b 突起電極
3 固体撮像素子
3a 受光面
3b 貫通ビア
3c 再配線層
4 第1封止樹脂
5 第2封止樹脂
6 電子部品
8 メイン基板
8a 突起部
8b ベース部
8c 第1切り欠き部
8d 第2切り欠き部
9 接続端子
10 突起電極
11 接続端子
13 接合材料
14 接続端子
15 接続端子
16 接続端子
18 固体撮像素子
19 電子部品
20 回路基板
20a 基板
20b 基板
25 ボンディングパッド
26 ボンディングパッド
27 端子部
29 フレキシブル回路基板
30 信号ケーブル
101 固体撮像素子
102 カバーガラス
103 フレキシブル回路基板
104 リード
105 封止樹脂
106 封止固定部
1 cover glass 2 adhesive 2b projecting electrode 3 solid-state imaging element 3a light receiving surface 3b through via 3c rewiring layer 4 first sealing resin 5 second sealing resin 6 electronic component 8 main board 8a projection 8b base 8c first Notch 8d Second notch 9 Connection terminal 10 Projection electrode 11 Connection terminal 13 Bonding material 14 Connection terminal 15 Connection terminal 16 Connection terminal 18 Solid-state imaging device 19 Electronic component 20 Circuit board 20a Board 20b Board 25 Bonding pad 26 Bonding pad 27 terminal part 29 flexible circuit board 30 signal cable 101 solid-state imaging element 102 cover glass 103 flexible circuit board 104 lead 105 sealing resin 106 sealing fixing part

Claims (6)

受光面と、前記受光面と反対の面に形成された再配線層と、を備えた固体撮像素子と、
前記固体撮像素子に固定されるメイン基板と、
前記固体撮像素子の再配線層に設けられた第1接続端子と前記メイン基板上の第2接続端子とを電気的に接続する突起電極と、
前記突起電極を覆う第1封止樹脂と、
前記メイン基板上に搭載された少なくとも1個の電子部品と、を含み、
前記メイン基板は、ベース部と前記ベース部に積層されかつ前記ベース部よりも小さな幅を有する突起部とを有し、
前記メイン基板において、前記突起部上に前記第2接続端子が配置され、前記少なくとも1個の電子部品は前記固体撮像素子と前記ベース部との間に位置するように前記ベース部上に搭載される、固体撮像装置。
a solid-state imaging device comprising a light receiving surface and a rewiring layer formed on a surface opposite to the light receiving surface;
a main substrate fixed to the solid-state imaging device;
a projecting electrode electrically connecting a first connection terminal provided on a rewiring layer of the solid-state imaging device and a second connection terminal on the main substrate;
a first sealing resin covering the projecting electrode;
at least one electronic component mounted on the main board,
The main substrate has a base portion and a protrusion laminated on the base portion and having a width smaller than that of the base portion ,
In the main board, the second connection terminal is arranged on the projection, and the at least one electronic component is mounted on the base so as to be positioned between the solid-state imaging device and the base. A solid-state imaging device.
前記突起部のコーナに凹形状の第1切り欠き部がある請求項1記載の固体撮像装置。 2. A solid-state imaging device according to claim 1, wherein a corner of said protrusion has a concave first notch. 前記第1封止樹脂は、前記第1切り欠き部より固体撮像装置の側面へはみ出さない請求項2記載の固体撮像装置。 3. The solid-state imaging device according to claim 2 , wherein the first sealing resin does not protrude from the first notch to the side surface of the solid-state imaging device. 前記ベース部のコーナに凹形状の第2切り欠き部がある請求項1~3のいずれか1項に記載の固体撮像装置。 4. The solid-state imaging device according to claim 1, wherein the corner of the base portion has a concave second notch portion. 前記電子部品は、前記ベースに配置され、前記電子部品を封止する第2封止樹脂があり、前記第2封止樹脂は、前記第2切り欠き部より固体撮像装置の側面へはみ出さない請求項4記載の固体撮像装置。 The electronic component is arranged on the base, and there is a second sealing resin that seals the electronic component, and the second sealing resin does not protrude from the second notch to the side surface of the solid-state imaging device. 5. The solid-state imaging device according to claim 4 . 前記突起部の上面と側面のなす角と、前記ベース部の上面と側面のなす角との少なくとも1方が90°未満である請求項1または2に記載の固体撮像装置3. The solid-state imaging device according to claim 1, wherein at least one of the angle formed by the upper surface and the side surface of the protrusion and the angle formed by the upper surface and the side surface of the base portion is less than 90 degrees.
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JP2018125685A JP7162238B2 (en) 2018-07-02 2018-07-02 Solid-state imaging device
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PCT/JP2018/036629 WO2019077980A1 (en) 2017-10-20 2018-10-01 Solid-state imaging device
EP18867857.7A EP3700196B1 (en) 2017-10-20 2018-10-01 Solid-state imaging device
US16/803,551 US11381767B2 (en) 2017-10-20 2020-02-27 Solid-state imaging device having electronic components mounted between a main substrate and an imaging element

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JP2017094044A (en) 2015-11-20 2017-06-01 オリンパス株式会社 Manufacturing method of semiconductor device, semiconductor device, and endoscope

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017094044A (en) 2015-11-20 2017-06-01 オリンパス株式会社 Manufacturing method of semiconductor device, semiconductor device, and endoscope

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