JP7170748B2 - 基板処理装置、および基板処理方法 - Google Patents
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- B24B49/045—Specially adapted gauging instruments
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- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
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- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
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- H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
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- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/50—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for positioning, orientation or alignment
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- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/78—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using vacuum or suction, e.g. Bernoulli chucks
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- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
- H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
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Description
複数の基板チャックのそれぞれを、基板の搬入が行われる搬入位置と、前記基板の薄化が行われる加工位置と、前記基板の搬出が行われる搬出位置とにこの順番で送る回転テーブルと、
前記加工位置での前記基板チャックの前記回転テーブルに対する傾斜角度を調整する傾斜角度調整部と、
前記加工位置で前記基板を薄化する加工部と、
前記加工部を制御する加工制御部と、
前記加工部で薄化された前記基板の板厚を、前記基板の径方向複数点で測定する板厚測定部と、
前記板厚測定部の測定結果に基づき、前記傾斜角度調整部を制御する傾斜角度制御部と、を備え、
前記板厚測定部は、前記基板の板厚測定を前記搬出位置で行い、
前記傾斜角度制御部は、一の前記基板の板厚測定の後、別の前記基板の薄化前に、前記一の前記基板の板厚測定の結果に基づき、前記別の前記基板を保持する前記基板チャックの前記傾斜角度を所望の角度に調整する制御を行い、
前記加工制御部は、前記所望の角度に傾斜した前記基板チャックで前記別の前記基板を保持した状態で、前記別の前記基板を薄化する制御を行う。
10 基板処理装置
20 回転テーブル
30 基板チャック
40 加工部
60 傾斜角度調整部
70 板厚測定部
71 板厚測定部移動機構
80 基板洗浄部
82 チャック洗浄部
90 制御部
103 傾斜角度制御部
104 加工制御部
105 板厚測定制御部
106 基板洗浄制御部
A0 搬入出位置(搬出位置)
A1 加工位置
A2 加工位置
A3 加工位置
Claims (16)
- 複数の基板チャックのそれぞれを、基板の搬入が行われる搬入位置と、前記基板の薄化が行われる加工位置と、前記基板の搬出が行われる搬出位置とにこの順番で送る回転テーブルと、
前記加工位置での前記基板チャックの前記回転テーブルに対する傾斜角度を調整する傾斜角度調整部と、
前記加工位置で前記基板を薄化する加工部と、
前記加工部を制御する加工制御部と、
前記加工部で薄化された前記基板の板厚を、前記基板の径方向複数点で測定する板厚測定部と、
前記板厚測定部の測定結果に基づき、前記傾斜角度調整部を制御する傾斜角度制御部と、を備え、
前記板厚測定部は、前記基板の板厚測定を前記搬出位置で行い、
前記傾斜角度制御部は、一の前記基板の板厚測定の後、別の前記基板の薄化前に、前記一の前記基板の板厚測定の結果に基づき、前記別の前記基板を保持する前記基板チャックの前記傾斜角度を所望の角度に調整する制御を行い、
前記加工制御部は、前記所望の角度に傾斜した前記基板チャックで前記別の前記基板を保持した状態で、前記別の前記基板を薄化する制御を行う、基板処理装置。 - 前記板厚測定部を制御する板厚測定制御部を備え、
前記加工制御部が前記基板の薄化を実行する間に、前記板厚測定制御部が別の前記基板の板厚測定を実行する、請求項1に記載の基板処理装置。 - 前記基板を前記搬出位置で洗浄する基板洗浄部と、
前記基板洗浄部を制御する基板洗浄制御部とを備え、
前記基板洗浄制御部は、前記板厚測定部による前記基板の板厚測定の前に、前記基板の洗浄を実行する、請求項1または2に記載の基板処理装置。 - 前記板厚測定部を、前記基板の板厚を測定する測定位置と、前記基板を洗浄する洗浄液を避けて待機する測定待機位置との間で移動する板厚測定部移動機構を備える、請求項1~3のいずれか1項に記載の基板処理装置。
- 前記傾斜角度制御部は、前記基板の板厚の測定値が許容範囲内の場合に、前記傾斜角度の設定を補正することなく維持する、請求項1~4のいずれか1項に記載の基板処理装置。
- 前記基板チャックは、m(mは1以上の自然数)番目の前記加工位置の次に、前記搬出位置に送られ、
前記板厚測定部は、m番目の前記加工位置で薄化された直後の板厚を、前記基板の径方向複数点で測定し、
前記傾斜角度制御部は、前記板厚測定部の測定結果に基づき、m番目の前記加工位置での前記傾斜角度の設定を補正する、請求項1~5のいずれか1項に記載の基板処理装置。 - 前記基板チャックは、前記搬入位置から前記搬出位置まで送られる間にn(nは2以上の自然数)個の前記加工位置に順番に送られ、n番目の前記加工位置の次に前記搬出位置に送られ、
前記板厚測定部は、n番目の前記加工位置で薄化された板厚を、前記基板の径方向複数点で測定し、
前記傾斜角度制御部は、前記加工位置ごとに前記傾斜角度を設定し、前記板厚測定部の測定結果に基づき、n番目の前記加工位置での前記傾斜角度の設定を補正し、1番目からn-1番目までの前記加工位置での前記傾斜角度の設定を補正することなく維持する、請求項1~6のいずれか1項に記載の基板処理装置。 - 前記搬入位置と前記搬出位置とは、同じ位置であって、
前記搬入位置と前記搬出位置を兼ねる搬入出位置において、前記基板の搬出後に前記基板チャックを洗浄するチャック洗浄部と、
前記チャック洗浄部を、前記基板チャックを洗浄する洗浄位置と、前記基板の板厚測定中に前記板厚測定部を避けて待機する洗浄待機位置との間で移動するチャック洗浄部移動機構と、
前記板厚測定部を、前記基板の板厚を測定する測定位置と、前記基板チャックの洗浄中に前記チャック洗浄部を避けて待機する測定待機位置との間で移動する板厚測定部移動機構と、を備える、請求項1~7のいずれか1項に記載の基板処理装置。 - 回転テーブルの回転中心線の周りに配置される複数の基板チャックのそれぞれを、基板の搬入が行われる搬入位置と、前記基板の薄化が行われる加工位置と、前記基板の搬出が行われる搬出位置とにこの順番で送る工程と、
前記加工位置での前記基板チャックの前記回転テーブルに対する傾斜角度を調整する工程と、
前記加工位置で前記基板を薄化する工程と、
前記加工位置で薄化された前記基板の板厚を、前記基板の径方向複数点で測定する工程と、
前記基板の板厚測定の測定結果に基づき、前記加工位置での前記傾斜角度の設定を補正する工程とを有し、
前記基板の板厚を測定する工程は、前記搬出位置で行われ、
一の前記基板の板厚測定の後、別の前記基板の薄化前に、前記一の前記基板の板厚測定の結果に基づき、前記別の前記基板を保持する前記基板チャックの前記傾斜角度を所望の角度に調整し、
前記所望の角度に傾斜した前記基板チャックで前記別の前記基板を保持した状態で、前記別の前記基板を薄化する、基板処理方法。 - 前記搬出位置で前記基板の板厚を測定する工程は、前記加工位置で別の前記基板を薄化する工程の間に行われる、請求項9に記載の基板処理方法。
- 前記搬出位置で前記基板の板厚を測定する工程の前に、前記搬出位置で前記基板を洗浄する工程を有する、請求項9または10に記載の基板処理方法。
- 前記基板の板厚を測定する板厚測定部を、前記基板の板厚を測定する測定位置と、前記基板を洗浄する洗浄液を避けて待機する測定待機位置との間で移動する工程とを有する、請求項9~11のいずれか1項に記載の基板処理方法。
- 前記基板の板厚の測定値が許容範囲内の場合に、前記傾斜角度の設定が補正されずに維持される、請求項9~12のいずれか1項に記載の基板処理方法。
- 前記基板チャックは、m(mは1以上の自然数)番目の前記加工位置の次に、前記搬出位置に送られ、
前記基板の板厚を測定する工程では、m番目の前記加工位置で薄化された直後の板厚を、前記基板の径方向複数点で測定し、
前記傾斜角度の設定を補正する工程では、前記基板の板厚を測定する工程の測定結果に基づき、m番目の前記加工位置での前記傾斜角度の設定を補正する、請求項9~13のいずれか1項に記載の基板処理方法。 - 前記基板チャックは、前記搬入位置から前記搬出位置まで送られる間にn(nは2以上の自然数)個の前記加工位置に順番に送られ、n番目の前記加工位置の次に前記搬出位置に送られ、
前記基板の板厚を測定する工程では、n番目の前記加工位置で薄化された板厚を、前記基板の径方向複数点で測定し、
前記加工位置ごとに前記傾斜角度が設定されており、
前記傾斜角度の設定を補正する工程では、前記基板の板厚を測定する工程の測定結果に基づき、n番目の前記加工位置での前記傾斜角度の設定を補正し、1番目からn-1番目までの前記加工位置での前記傾斜角度の設定を補正することなく維持する、請求項9~14のいずれか1項に記載の基板処理方法。 - 前記搬入位置と前記搬出位置とは、同じ位置であって、
前記搬入位置と前記搬出位置を兼ねる搬入出位置において、前記基板の搬出後に前記基板チャックをチャック洗浄部で洗浄する工程と、
前記チャック洗浄部を、前記基板チャックを洗浄する洗浄位置と、前記基板の板厚測定中に前記基板の板厚を測定する板厚測定部を避けて待機する洗浄待機位置との間で移動する工程と、
前記板厚測定部を、前記基板の板厚を測定する測定位置と、前記基板チャックの洗浄中に前記チャック洗浄部を避けて待機する測定待機位置との間で移動する工程と、を有する、請求項9~15のいずれか1項に記載の基板処理方法。
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