JP7208491B2 - Light-emitting device manufacturing method and light-emitting device - Google Patents

Description

The present invention relates to a method for manufacturing a light emitting device and a light emitting device.

Light-emitting elements (LED elements) are widely used in various applications such as backlight light sources and various types of illumination. Patent Literature 1 discloses a small light-emitting device that includes a light-emitting element housing package having a recess and a light-emitting element housed and mounted in the recess.

JP-A-2004-207542

In order to reduce the size of a product incorporating a light emitting device, there is a demand for further thinning of the light emitting device. Accordingly, an object of the embodiments of the present invention is to provide a thin light emitting device manufacturing method and a thin light emitting device.

A method for manufacturing a light emitting device according to an embodiment of the present disclosure includes a light emitting element having a pair of device electrodes formed on an electrode forming surface, solder covering a lower surface of the device electrode, and the device electrode via the solder. a support having a first bottom surface including a metal member to be bonded to the solder; and removing the support and providing a second intermediate having a second bottom surface including the solder bottom surface. forming a body.

A light emitting device according to an embodiment of the present disclosure includes a semiconductor laminate having a light extraction surface and an electrode formation surface located on the opposite side of the light extraction surface; a pair of device electrodes located on the electrode formation surface; a light emitting element comprising: solder covering the lower surface of the element electrode; a first reflecting member covering the electrode forming surface and the side surface of the solder; covering the lower surface of the solder and the lower surface of the first reflecting member an external connection electrode;

A light emitting device according to an embodiment of the present disclosure includes a semiconductor laminate having a light extraction surface and an electrode formation surface located on the opposite side of the light extraction surface; a pair of device electrodes located on the electrode formation surface; , solder covering the lower surface of the element electrode, and a first reflecting member covering the electrode forming surface and the side surface of the solder, wherein the lower surface of the solder is exposed to the outside .

According to the manufacturing method of the light-emitting device of the embodiment of the present invention, a thin light-emitting device can be provided. Further, according to the light emitting device of the embodiment of the present invention, it can be formed thin.

1 is a perspective view schematically showing the entire device from the translucent member side of the light emitting device according to the first embodiment; FIG. 1 is a perspective view schematically showing the entire device from the external connection electrode side of the light emitting device according to the first embodiment; FIG. 2 is a bottom view showing the external connection electrode side of the light emitting device according to the first embodiment; FIG. FIG. 2B is a cross-sectional view showing a cross section taken along line IIB-IIB of FIG. 2A; FIG. 4 is a cross-sectional view schematically showing a configuration in which a modification of the light emitting device according to the first embodiment is shown and an external connection electrode is formed by solder. 4 is a flow chart illustrating a method for manufacturing the light emitting device according to the first embodiment; 4 is a flow chart showing an example of a first intermediate preparation step in the method for manufacturing the light emitting device according to the first embodiment. FIG. 4 is a plan view schematically showing a support in the method of manufacturing the light emitting device according to the first embodiment, with a part of the support omitted. FIG. 4B is a cross-sectional view taken along line IVB-IVB of FIG. 4A; FIG. 4B is an explanatory view showing the method for manufacturing the light emitting device according to the first embodiment, and is a diagram schematically showing a cross section of a state in which the light emitting element and the support are connected. FIG. 4B is an explanatory view showing the method for manufacturing the light emitting device according to the first embodiment, and is a diagram schematically showing a cross section of a state in which the light emitting element and the support are connected to each other through solder. FIG. 4B is an explanatory view showing the method for manufacturing the light emitting device according to the first embodiment, and is a diagram schematically showing a cross section of a state in which a first reflecting member is formed on a support to which a light emitting element is connected. FIG. 10 is an explanatory view showing the method for manufacturing the light emitting device according to the first embodiment, and is a diagram schematically showing a cross section of the second intermediate formed by cutting the first lower surface of the first intermediate to form the second lower surface; be. FIG. 5D is an explanatory diagram showing the method for manufacturing the light emitting device according to the first embodiment, and is a diagram schematically showing an enlarged solder portion indicated by EA in FIG. 5D. FIG. 4B is an explanatory diagram showing the method for manufacturing the light emitting device according to the first embodiment, and is a diagram schematically showing a cross section of a state in which an external connection electrode is formed on the second lower surface of the second intermediate. FIG. 4 is an explanatory view showing a method for manufacturing the light emitting device according to the first embodiment, and is a diagram schematically showing a cross section of the light emitting device by forming an external connection electrode on the second intermediate body and then singulating the second intermediate body. FIG. 8 is a perspective view schematically showing the entire device from the side of the first translucent member and the second translucent member of the light emitting device according to the second embodiment; FIG. 6B is a cross-sectional view taken along line VIB-VIB of FIG. 6A in the light emitting device according to the second embodiment. FIG. 11 is a perspective view schematically showing the entire device from the side of the first translucent member and the second translucent member of the light emitting device according to the third embodiment; 7B is a cross-sectional view taken along the line VIIB-VIIB of FIG. 7A in the light emitting device according to the third embodiment. FIG. FIG. 11 is a flow chart showing an example of a first intermediate preparation step in the flow chart for explaining the method for manufacturing the light emitting device according to the third embodiment; FIG. FIG. 10 is an explanatory view showing the method for manufacturing the light emitting device according to the third embodiment, and is a view schematically showing a cross section of a state in which the light emitting element and the support are connected. FIG. 10 is an explanatory view showing the method for manufacturing the light emitting device according to the third embodiment, and is a diagram schematically showing a cross section of a state in which the light emitting element and the support are connected via solder. FIG. 11A is an explanatory view showing a method for manufacturing a light emitting device according to the third embodiment, and is a view schematically showing a cross section of a state in which a first reflecting member is formed on a support to which a light emitting element is connected. It is explanatory drawing which shows the manufacturing method of the light-emitting device which concerns on 3rd Embodiment, and is a figure which makes a cross section and shows typically the state which formed the 2nd light guide member on the 1st reflection member. It is explanatory drawing which shows the manufacturing method of the light-emitting device which concerns on 3rd Embodiment, and shows typically the state which forms a translucent member while forming a 1st light guide member on a 2nd light guide member in the cross section. It is a diagram. FIG. 10 is an explanatory view showing a method for manufacturing a light-emitting device according to the third embodiment, and is a diagram schematically showing a cross section of a state in which a groove is formed in a translucent member and then the groove is filled with a second reflecting member; be. FIG. 11 is an explanatory diagram showing a method for manufacturing a light emitting device according to the third embodiment, and is a schematic cross-sectional view showing a state in which a second intermediate body having a second lower surface formed by grinding the first lower surface of the first intermediate body is formed; is a diagram shown in FIG. FIG. 11 is an explanatory view showing a method for manufacturing a light emitting device according to the third embodiment, and is a view schematically showing a cross section of a state in which an external connection electrode is formed on the second lower surface of the second intermediate. 10 is a flow chart illustrating a method for manufacturing a light emitting device according to the fourth embodiment; FIG. 11 is an explanatory view showing a method for manufacturing a light emitting device according to the fourth embodiment, and is a diagram schematically showing a cross section of a state in which a light emitting element and a support are connected to each other and a first reflecting member is provided. FIG. 20 is an explanatory view showing a method for manufacturing a light emitting device according to the fourth embodiment, and is a cross-sectional view showing a state in which a first intermediate is formed by exposing the top surface of a translucent member from a first reflecting member. It is explanatory drawing which shows the manufacturing method of the light-emitting device which concerns on 4th Embodiment, and is a figure which makes a cross section and shows typically the state which formed the 1st groove from the upper surface of a 1st reflection member. FIG. 10 is an explanatory view showing a method for manufacturing a light emitting device according to the fourth embodiment, and is a diagram schematically showing a cross section of a second intermediate formed by cutting a first lower surface of a first intermediate to form a second lower surface; be. It is explanatory drawing which shows the manufacturing method of the light-emitting device which concerns on 4th Embodiment, and is a figure which makes a cross section and shows typically the state which formed the external connection electrode in the 2nd intermediate body. It is explanatory drawing which shows the manufacturing method of the light-emitting device which concerns on 4th Embodiment, and is a figure which makes a cross section and shows typically the light-emitting device which formed the 2nd groove|channel in the 2nd intermediate body, and was singulated. 11 is a flow chart for explaining a method for manufacturing a light emitting device according to a fifth embodiment; It is explanatory drawing which shows the manufacturing method of the light-emitting device which concerns on 5th Embodiment, and is a figure which makes a cross section and shows the state which formed the 1st intermediate. FIG. 11B is an explanatory view showing the method for manufacturing the light emitting device according to the fifth embodiment, and is a diagram schematically showing a cross section of a state in which the first cut groove is formed from the upper surface of the first reflecting member. FIG. 11 is an explanatory view showing a method for manufacturing a light emitting device according to a fifth embodiment, and is a diagram schematically showing a cross section of a second intermediate body in which a first lower surface of a first intermediate body is cut to form a second lower surface; be. FIG. 12A is an explanatory view showing the method for manufacturing the light emitting device according to the fifth embodiment, and is a view schematically showing a cross section of a state in which the upper surface of the second intermediate is supported by the support substrate. FIG. 10B is an explanatory view showing the method for manufacturing the light emitting device according to the fifth embodiment, and is a diagram schematically showing a cross section of a state in which the second groove is formed on the lower surface of the first reflecting member. FIG. 12B is an explanatory view showing the method for manufacturing the light emitting device according to the fifth embodiment, and is a view schematically showing a cross section of a state in which a metal layer is formed on the second lower surface of the second intermediate and in the second grooves. . FIG. 20 is an explanatory view showing the method of manufacturing the light emitting device according to the fifth embodiment, showing a cross section of a state in which the third groove is formed in the second groove, the metal layer is cut, and the side surface electrode portion and the lower surface electrode portion are formed; 1 is a diagram schematically showing a . FIG. 20 is an explanatory view showing the method for manufacturing the light emitting device according to the fifth embodiment, and is a diagram schematically showing a cross section of a state in which the supporting substrate is removed and each light emitting device is singulated. It is a bottom view which shows typically the 1st modification of an external connection electrode in each embodiment. It is a bottom view which shows typically the 2nd modification of an external connection electrode in each embodiment. It is a bottom view which shows typically the 3rd modification of an external connection electrode in each embodiment. FIG. 4 is a plan view schematically showing a first modified example of a metal member of a support in each embodiment; FIG. 15B is a cross-sectional view taken along line XVB-XVB of FIG. 15A; FIG. 10 is a plan view schematically showing a second modification of the metal member of the support in each embodiment. FIG. 10 is a plan view schematically showing a third modification of the metal member of the support in each embodiment; It is a bottom view which shows typically the 1st modification of the light-emitting device in each embodiment. It is a bottom view which shows typically the 2nd modification of the light-emitting device in each embodiment. FIG. 10 is a perspective view schematically showing a third modified example of the light emitting device in each embodiment; FIG. 11 is a perspective view schematically showing a fourth modification of the light emitting device in each embodiment; FIG. 11 is a perspective view schematically showing a fifth modification of the light emitting device in each embodiment;

Hereinafter, embodiments of the invention will be described with reference to the drawings as appropriate. However, the light-emitting device described below is for embodying the technical idea of the present invention, and unless there is a specific description, the present invention is not limited to the following. Moreover, the content described in one embodiment can also be applied to other embodiments and modifications. Furthermore, the sizes and positional relationships of members shown in the drawings may be exaggerated for clarity of explanation. In the present disclosure, the configuration of the light emitting device will be described first, and then the method for manufacturing the light emitting device will be described.

<First embodiment>
A light emitting device according to a first embodiment of the present invention will be described with reference to FIGS. 1A to 2C.
The light emitting device 100 includes a semiconductor laminate 23 having a light extraction surface 201 and an electrode formation surface 203 located on the opposite side of the light extraction surface 201, a pair of device electrodes 21 and 22 located on the electrode formation surface 203, , a solder 60 covering the lower surface of the element electrodes 21 and 22, a first reflecting member 30 covering the electrode forming surface 203 and the side surface of the solder 60, a lower surface of the solder 60 and the first reflecting member 30 and external connection electrodes 71 and 72 covering the lower surfaces of the. Note that the light emitting device 100 may include the first light guide member 40 or the translucent member 50 .
Each configuration of the light emitting device 100 will be described below.

<Light emitting element>
The light emitting element 20 is a semiconductor element that emits light by itself when a voltage is applied. In the light-emitting device 100, one light-emitting element 20 will be described, but a plurality of light-emitting elements 20 may be used. A known semiconductor element made of a nitride semiconductor or the like can be used for the light emitting element 20 .
The light emitting element 20 includes an element substrate 24 , a semiconductor laminate 23 laminated on the element substrate 24 , and a pair of element electrodes 21 and 22 provided on the semiconductor laminate 23 . Here, the light emitting element 20 has the upper surface of the element substrate 24 as the light extraction surface 201 and the lower surface of the semiconductor laminate 23 located on the opposite side of the light extraction surface 201 as the electrode formation surface 203 .
Examples of the light emitting element 20 include an LED chip. The light emitting device 20 comprises at least a semiconductor stack 23 and often further comprises a device substrate 24 . Further, the light emitting element 20 has device electrodes 21 and 22, and the device electrodes 21 and 22 are made of gold, silver, copper, tin, platinum, rhodium, titanium, aluminum, tungsten, palladium, nickel, or an alloy thereof. can do. A nitride semiconductor is preferably used as the semiconductor material. Nitride semiconductors are mainly represented by the general formula InxAlyGa1 _-xyN (0≤x, _0≤y , _x +y≤1).

Since the element substrate 24 has translucency, it is easy to employ flip-chip mounting, and it is easy to improve the light extraction efficiency. Examples of the base material of the element substrate 24 include sapphire, gallium nitride, aluminum nitride, silicon, silicon carbide, gallium arsenide, gallium phosphide, indium phosphide, zinc sulfide, zinc oxide, zinc selenide, and diamond. Among them, sapphire is preferred. The thickness of the element substrate 24 can be selected as appropriate, and is, for example, 0.02 mm or more and 1 mm or less. is preferred.

The light emitting element 20 preferably has a pair of positive and negative element electrodes 21 and 22 on the same side. Thereby, the light emitting element 20 can be flip-chip mounted. The light emitting element 20 has a light extraction surface 201 opposite to the electrode forming surface 203 on which the element electrodes 21 and 22 of the light emitting element 20 are located. Although the light-emitting element 20 has the element substrate 24 , the element substrate 24 may not be provided when the final light-emitting device 100 is configured. Further, the translucent member 50 is installed on the light extraction surface 201 of the light emitting element 20 here, and is formed so as to be exposed from the first reflecting member 30 . The upper surfaces of the device electrodes 21 and 22 are the surfaces of the device electrodes that face the electrode forming surface 203 . The lower surfaces of the device electrodes 21 and 22 are the surfaces opposite to the upper surfaces of the device electrodes 21 and 22 and facing the metal members 12 and 13 of the support 10 (see FIG. 4A). The side surfaces of the device electrodes 21 and 22 are surfaces located between the upper surfaces of the device electrodes 21 and 22 and the lower surfaces of the device electrodes 21 and 22 .

<Solder>
The solder 60 is formed so as to cover the side and bottom surfaces of the device electrodes 21 and 22 of the light emitting device 20 . The solder 60 is a member that electrically connects the device electrodes 21 and 22 of the light emitting device 20 as well as the external connection electrodes 71 and 72 . As the material of the solder 60, known materials such as tin-bismuth-based, tin-copper-based, tin-silver-based, and gold-tin-based materials can be used.
Also, the solder 60 is formed on the side surfaces and the bottom surfaces of the element electrodes 21 and 22 so that the area of the bottom surface of the solder increases from the electrode forming surface 203 toward the external connection electrodes 71 and 72 . It is desirable that the solder 60 be formed so as to cover 50% or more of the side surfaces of the device electrodes 21 and 22 or all of the side surfaces of the device electrodes 21 and 22 . Since the solder 60 is formed on the side surfaces of the device electrodes 21 and 22, the joining member that joins the light emitting device 100 and the mounting substrate does not enter from between the device electrodes 21 and 22 and the first reflecting member 30. can be suppressed. Thereby, deterioration of the semiconductor laminated body 23 can be prevented. Moreover, it is desirable that the solder 60 is formed so as to surround the device electrodes 21 and 21 when viewed from above. Note that the top view refers to the case of viewing from a direction substantially perpendicular to the top surface of the light emitting element 20 .

Further, the solder 60 is arranged between the element electrodes 21 and 22 and the first reflecting member 30 so that the side surface of the solder 60 is inclined toward the first reflecting member 30 from the electrode forming surface 203 toward the external connection electrodes 71 and 72 . The area of the lower surface is formed to be large (see FIG. 5E). Therefore, when compared with a state in which the solder 60 is not formed, the lower surface of the solder 60 has a larger heat dissipation area than the lower surfaces of the element electrodes 21 and 22, so that heat dissipation can be improved. The lower surface of the solder 60 is the surface of the solder 60 facing the external connection electrodes 71 and 72 . The side surface of the solder 60 is an inclined surface extending from the lower surface of the solder toward the electrode forming surface. When the solder 60 has an upper surface facing the electrode forming surface 203 , the side surface of the solder 60 is the surface located between the upper surface of the solder 60 and the lower surface of the solder 60 .
Also, the solder 60 is used here to connect the device electrodes 21 and 22 to the metal members 12 and 13 (see FIG. 5A) of the support 10 which are removed when the final device is constructed. be done. Therefore, in the final configuration of the light emitting device 100 , the support 10 is removed and the solder 60 is formed on the side surfaces (peripheral surfaces) and the lower surfaces of the device electrodes 21 and 22 .
The bottom surface of the solder 60 and the bottom surface of the first reflecting member 30, which will be described later, are preferably formed to be flush with each other. Since the lower surfaces of these are on the same plane, external connection electrodes 71 and 72, which will be described later, can be easily formed.

<Translucent member>
The translucent member 50 is a translucent member that covers the light extraction surface 201 of the light emitting element 20 and protects the light emitting element 20 . The translucent member 50 has an area larger than the light extraction surface 201 of the light emitting element 20 when viewed from above. The translucent member 50 may have its lower surface connected to the light extraction surface 201 of the light emitting element 20 via the first light guide member 40 . The first light guide member 40 may be positioned only between the light extraction surface 201 of the light emitting element 20 and the translucent member 50 to fix the light emitting element 20 and the translucent member 50 together. The light emitting element 20 and the translucent member 50 may be fixed by covering from the light extraction surface 201 to the element side surface 202 of the light emitting element 20 .

For example, resin can be used as the material of the translucent member 50 . Resins that can be used for the translucent member 50 include silicone resins, epoxy resins, phenol resins, polycarbonate resins, acrylic resins, and modified resins thereof. It is preferable to use an epoxy resin as the material of the translucent member 50 because the strength of the light-emitting device 100 can be improved more than when a silicone resin is used. Moreover, silicone resins and modified silicone resins are preferable because they are excellent in heat resistance and light resistance. The translucent member 50 may contain wavelength converting particles and/or diffusing particles. Known wavelength conversion particles and/or diffusion particles can be used.
The light-transmitting member 50 may include a light-transmitting layer 52 containing no wavelength-converting particles and a wavelength-converting layer 51 containing wavelength-converting particles. Also, the wavelength conversion layer 51 may have a first wavelength conversion layer 51A1 and a second wavelength conversion layer 51A2. By configuring the translucent member 50 in this way, the color adjustment of the light emitting device 100 is facilitated.

The wavelength conversion particles are members that absorb at least part of the primary light emitted by the light emitting element 20 and emit secondary light with a wavelength different from that of the primary light. By including the wavelength conversion particles in the translucent member 50, it is possible to output mixed color light in which the primary light emitted by the light emitting element 20 and the secondary light emitted by the wavelength conversion particles are mixed. For example, if a blue LED is used as the light emitting element 20 and a phosphor such as YAG is used as the wavelength conversion particles, the blue light emitted from the blue LED and the yellow light emitted by the phosphor excited by the blue light can be mixed. A light-emitting device 100 that outputs white light can be configured. Further, the light emitting device 100 that outputs white light by using a blue LED as the light emitting element 20, a β-sialon phosphor that is a green phosphor, and a manganese-activated fluoride phosphor that is a red phosphor as the wavelength conversion particles. may be configured.

When the light-transmitting member 50 includes the wavelength conversion layer 51 and the light-transmitting layer 52 , the light-transmitting layer 52 is located above the wavelength conversion layer 51 in the direction toward the light extraction surface 501 . By doing so, the light-transmitting layer 52 functions as a protective layer, so deterioration of the wavelength conversion particles can be suppressed. In addition, since the translucent layer 52 is positioned on the wavelength conversion layer 51, wavelength conversion particles that are susceptible to moisture can be used. For example, manganese-activated fluoride phosphors can also be used as wavelength converting particles. A manganese-activated fluoride-based phosphor is a preferable member from the viewpoint of color reproducibility because it can emit light with a relatively narrow spectral line width.
Further, in the wavelength conversion layer 51, in the case of the configuration of the first wavelength conversion layer 51A1 and the second wavelength conversion layer 51A2 covering the first wavelength conversion layer 51A1, the second wavelength conversion layer 51A2 is the first wavelength conversion layer. 51A1 may be directly coated, or the first wavelength conversion layer 51A1 may be coated via another translucent layer. The emission peak wavelength of the wavelength conversion particles contained in the first wavelength conversion layer 51A1 is preferably shorter than the emission peak wavelength of the wavelength conversion particles contained in the second wavelength conversion layer 51A2. By doing so, the light from the first wavelength conversion layer 51A1 excited by the light emitting element 20 can excite the wavelength conversion particles of the second wavelength conversion layer 51A2. Thereby, the light from the wavelength conversion particles of the second wavelength conversion layer 51A2 can be increased.

The emission peak wavelength of the wavelength conversion particles contained in the first wavelength conversion layer 51A1 is 500 nm or more and 570 nm or less, and the emission peak wavelength of the wavelength conversion particles contained in the second wavelength conversion layer 51A2 is 610 nm or more and 750 nm or less. Preferably. By doing so, a light-emitting device with high color reproducibility can be obtained. For example, the wavelength conversion particles contained in the first wavelength conversion layer 51A1 include a β-sialon phosphor, and the wavelength conversion particles contained in the second wavelength conversion layer 51A2 include manganese-activated potassium fluorosilicate phosphor. be done. Especially when manganese-activated potassium fluorosilicate phosphor is used as the wavelength-converting particles contained in the second wavelength-converting layer 51A2, the translucent member 50 includes the first wavelength-converting layer 51A1 and the second wavelength-converting layer 51A1. Preferably, the layer 51A2 is provided. Although the phosphor of manganese-activated potassium fluorosilicate tends to cause luminance saturation, since the first wavelength conversion layer 51A1 is positioned between the second wavelength conversion layer 51A2 and the light emitting element 20, the light from the light emitting element 20 is excessive. In addition, it is possible to suppress irradiation of the manganese-activated potassium fluorosilicate phosphor. Thereby, deterioration of the manganese-activated potassium fluorosilicate phosphor can be suppressed.

<First light guide member>
The first light guide member 40 is a member that fixes the light emitting element 20 and the translucent member 50 and guides the light from the light emitting element 20 to the translucent member 50 . Examples of the base material of the first light guide member 40 include silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin, or modified resins thereof. It is preferable to use an epoxy resin as the material of the first light guide member 40 because the hardness of the light-emitting device 100 can be improved more than when a silicone resin is used. Moreover, silicone resins and modified silicone resins are preferable because they are excellent in heat resistance and light resistance. The first light guide member 40 may contain wavelength conversion particles and/or diffusion particles similar to the wavelength conversion layer 51 of the translucent member 50 described above.

The first light guide member 40 may be positioned only between the light extraction surface 201 of the light emitting element 20 and the translucent member 50 to fix the light emitting element 20 and the translucent member 50 together. The light emitting element 20 and the translucent member 50 may be fixed by covering from the light extraction surface 201 of the light emitting element 20 to the element side surface 202 of the light emitting element 20 . In addition, when the first light guide member 40 is positioned only between the translucent member 50 and the light extraction surface 201 , the side surface of the light emitting element 20 is covered with the first reflection member 30 . The first light guide member 40 is made of a member having a higher transmittance of light from the light emitting element 20 than the first reflection member 30 . Therefore, by covering the side surface of the light emitting element 20 with the first light guide member 40, the light emitted from the element side surface 202 of the light emitting element 20 can be easily extracted to the outside of the light emitting device 100 through the first light guide member 40. Therefore, the light extraction efficiency can be improved.

<First reflecting member>
The first reflecting member 30 is a member that reflects light toward the light extraction surface 501 side of the translucent member 50 and prevents the light from the light emitting element 20 from being absorbed by the mounting substrate on which the light emitting device 100 is mounted. be. The first reflecting member 30 may cover the element side surface 202 of the light emitting element 20 directly or via the first light guiding member 40 . Also, the first reflecting member 30 may be formed so as to cover the element side surface 202 of the light emitting element 20 , the electrode forming surface 203 , the side surface of the solder 60 and the side surface of the translucent member 50 . The light reflectance of the first reflecting member 30 at the emission peak wavelength of the light emitting element 20 is preferably 70% or more, more preferably 80% or more, and even more preferably 90% or more. As the material of the first reflecting member 30, for example, a member containing a white pigment in a base material can be used.

As the base material of the first reflecting member 30, it is preferable to use a resin. For example, it is preferable to use silicone resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin, or modified resins thereof. In particular, it is preferable to use an epoxy resin as the base material of the first reflecting member 30 . The use of epoxy resin is preferable because the hardness of the light-emitting device can be improved as compared with the case of using silicone resin. Moreover, silicone resins and modified silicone resins are preferably used as the base material of the first reflecting member 30 because they are excellent in heat resistance and light resistance. The first reflecting member 30 has a predetermined thickness to the extent that the light from the light emitting element 20 does not pass through, thereby suppressing the light from the light emitting element 20 from transmitting through the first reflecting member and improving the light extraction efficiency. be able to. In addition, when the light from the light emitting element 20 is not transmitted, it is preferable that 50% or more of the light from the light emitting element 20 is not transmitted, more preferably 60% or more, and even more preferably 70% or more. preferable.

<External connection electrode>
The external connection electrodes 71 and 72 are for connecting the light emitting device 100 to external electrodes. The external connection electrodes 71 and 72 are formed in contact with the bottom surface of the solder 60 and the bottom surface of the first reflecting member 30 . Each of the external connection electrodes 71 and 72 is spaced apart from each other and extends over the lower surface of the first reflecting member 30 with an area equal to or greater than the area of the lower surface of the solder 60. It is formed to have a large area. The external connection electrodes 71 and 72 are formed by layering silver, platinum, aluminum, rhodium, gold, or an alloy thereof, for example. The external connection electrodes 71 and 72 may be formed up to the peripheral edge of the bottom surface of the light emitting device, or the external connection electrodes 71 and 72 may be formed away from the peripheral edge of the bottom surface of the light emitting device. When the external connection electrodes 71 and 72 are formed to the peripheral edge of the lower surface of the light emitting device, the external connection electrodes can be formed even in a side emission type light emitting device in which the side surface of the light emitting device faces the mounting surface of the mounting substrate. It becomes easy to supply electricity from 71 and 72 . Moreover, when the external connection electrodes 71 and 72 are formed away from the peripheral edge of the lower surface of the light emitting device, it is possible to suppress the occurrence of burrs on the external connection electrodes 71 and 72 . The external connection electrodes 71 and 72 may be formed over part of the side surface of the first reflecting member 30 as described later.

The light emitting device 100 is formed with each configuration as described above. Since the light-emitting device 100 does not have a substrate on which the light-emitting element 20 is mounted, the dimension from the upper surface (the light extraction surface 501) to the lower surface (the external connection electrodes 71 and 72) of the light-emitting device 100 can be reduced. can. Therefore, the light emitting device 100 can be used as a backlight device for a liquid crystal display, various lighting equipment, a large display, various display devices such as advertisements and destination guides, projector devices, digital video cameras, facsimiles, copiers, scanners, and the like. It can be used for a reader or the like. Moreover, in the light emitting device 100, the solder 60 covering the side surfaces and the lower surfaces of the device electrodes 21 and 22 is in contact with the external connection electrodes 71 and 72, so the solder 60 covering the device electrodes 21 and 22 is not formed. The heat dissipation of the light-emitting device 100 is improved as compared with the case where the light-emitting device 100 is not provided. It should be noted that the light extraction surface 501 of the light emitting device 100 is the surface located on the top surface of the light emitting device 100 and from which light from the light emitting element 20 is extracted. Therefore, when the upper surface of the translucent member 50 is positioned on the uppermost surface of the light emitting device 100 , the translucent member 50 has the light extraction surface 501 of the light emitting device 100 . Further, when the upper surface of the light emitting element 20 is positioned on the uppermost surface of the light emitting device 100, the light emitting element 20 has the light extraction surface 501 of the light emitting device.

In the light-emitting device 100, as shown in FIG. 2C, the lower surface of the solder 60 can be used instead of the external connection electrodes 71 and 72 without providing the external connection electrodes 71 and 72. FIG. Since the area of the lower surface of the solder 60 is larger than the area of the lower surfaces of the element electrodes 21 and 22, the heat dissipation of the light emitting device 100 can be improved.

Next, a method for manufacturing a light emitting device will be described with reference to FIGS. 3A, 3B, 4A, 4B, and 5A to 5G.
A method for manufacturing a light-emitting device includes at least the following steps.
(1) A light emitting element having a pair of device electrodes formed on an electrode forming surface, solder covering the lower surface of the device electrode, and a support having a first lower surface including a metal member joined to the device electrode via solder. A first intermediate preparation step S11 is performed to prepare a first intermediate comprising a body.
(2) Perform a second intermediate forming step S12 of removing the support and forming a second intermediate having a second lower surface including the lower surface of the solder.
(3) An external connection electrode forming step S13 is performed to form a pair of external connection electrodes on the second lower surface.
Each step will be described below. When the lower surface of the solder exposed from the first reflecting member is used as the external connection electrode, the external connection electrode forming step S13 may not be performed. When the external connection electrode forming step S13 is not performed, it is also possible to perform the singulation step after the second intermediate forming step S12.

(Step of preparing the first intermediate)
The first intermediate preparation step S11 is a step of preparing the first intermediate 101 in which the light emitting element 20 is connected to the support 10 via the solder 60 . Here, in order to simplify the explanation, the constituent parts of the sectional view taken along line IVB-IVB in FIG. 4A will be mainly explained. In other words, in the first intermediate 101, a plurality of light emitting elements 20 are arranged in the matrix direction, and the part where two light emitting elements 20 are arranged will be mainly described. However, it is assumed that one light emitting element 20 is used as the light emitting device 100 after being singulated.

As shown in FIGS. 5A and 5B, in the first intermediate preparation step S11, the first intermediate 101 is formed by connecting the light emitting element 20 to the support 10. As shown in FIGS. A pair of element electrodes 21 and 22 of the light emitting element 20 and the metal members 12 and 13 are respectively joined via solder 60 . The areas of the metal members 12 and 13 may be wider than the device electrodes 21 and 22 of the light emitting device 20 . This makes it easier to form the solder 60 covering the side surfaces of the device electrodes 21 and 22 . The metal members 12 and 13 may have protrusions at positions facing the lower surfaces of the device electrodes 21 and 22 of the light emitting device 20 . Since the metal members 12 and 13 have convex portions, alignment can be easily performed by the self-alignment effect when connecting the element electrodes 21 and 22 with the solder 60 .
The areas of the metal members 12 and 13 may be equal to those of the device electrodes 21 and 22 of the light emitting device 20 . By doing so, the positional accuracy of the light emitting element 20 with respect to the metal members 12 and 13 can be improved.

The size of the protrusions in top view is not particularly limited, but is preferably within ±10% of the size of the lower surfaces of the device electrodes 21 and 22 facing the protrusions. By doing so, the self-alignment effect can be enhanced. The thickness of the projections is not particularly limited, but is preferably 3 μm or more and 100 μm or less, more preferably 5 μm or more and 50 μm or less.

Metal members 12 and 13 can be formed using a known metal material. For example, the metal members 12 and 13 can be made of copper, iron, nickel, tungsten, chromium, aluminum, silver, gold, titanium, palladium, rhodium, or alloys thereof. In particular, it is preferable to use copper or a copper alloy as the material of the metal members 12 and 13 . By doing so, the heat dissipation of the metal members 12 and 13 is improved. Also, the surface layers of the metal members 12 and 13 may be plated with a known metal material. For example, the surface layers of the metal members 12 and 13 are preferably plated with gold. By doing so, it is possible to suppress oxidation of the metal members 12 and 13 .

The support 10 used here is to be removed when the light emitting device 100 is formed. When removing the support 10 as will be described later, the metal members 12 and 13 are removed from the first lower surface 112, or even part of the metal members 12 and 13 and the solder 60 are removed. thickness is reduced.

The support 10 includes a base 11 and a pair of metal members 12 and 13 formed on the upper surface of the base 11 .
The base material 11 can be configured using an insulating member such as resin or fiber-reinforced resin, ceramics, or glass. Examples of resins or fiber-reinforced resins include epoxy, glass epoxy, bismaleimide triazine (BT), and polyimide. Examples of ceramics include aluminum oxide, aluminum nitride, zirconium oxide, zirconium nitride, titanium oxide, titanium nitride, and mixtures thereof. Also, the base material 11 may be formed using a known metal material like the metal members 12 and 13 . The base material 11 and the metal members 12 and 13 may be made of the same metal material, or may be made of different metal materials. When base material 11 and metal members 12 and 13 are made of the same metal material, base material 11 and metal members 12 and 13 are integrally formed.
As an example, the maximum thickness of the base material 11 from the upper surface 111 to the first lower surface 112 is preferably 100 μm or more and 500 μm or less. The strength of the base material is improved by setting the thickness from the upper surface 111 to the first lower surface 112 to 100 μm or more.

In the first intermediate 101 , the light emitting element 20 may be connected to a translucent member 50 that covers the light extraction surface 201 . By covering the light emitting element 20 with the translucent member 50, the light emitting element 20 can be protected from external stress. The first intermediate 101 is obtained by connecting the element electrodes 21 and 22 of the light emitting element 20 to the metal members 12 and 13 of the support 10 via the solder 60 . Further, in the light emitting device 100, the upper surface of the translucent member 50 is the light extraction surface 501 of the device.

In addition, as shown in FIG. 5C, the first intermediate body 101 may be provided with the first reflecting member 30 by the first reflecting member forming step after the light emitting element 20 is arranged. The first reflecting member 30 may cover the side surface of the translucent member 50 , the electrode formation surface 203 of the light emitting element 20 , and the side surface of the solder 60 . The first reflecting member 30 is provided so as to cover the side surface of the light emitting element 20 via the first light guide member 40 . The first reflecting member 30 is formed, for example, by placing the support 10 on which the light emitting element 20 is arranged in upper and lower molds, and filling the mold with a melted member that becomes the first reflecting member 30 when cured. be done. Then, the first intermediate 101 is prepared in a state where the first reflecting member 30 is formed.

(Step of forming second intermediate)
As shown in FIGS. 5D and 5E, when the first intermediate 101 having the first reflecting member 30 formed thereon is prepared, the second intermediate 102 having the second lower surface 113 formed on the first intermediate 101 is then prepared. 2nd intermediate formation process S12 which forms is performed. In the second intermediate body forming step S12, the first intermediate body 101 is ground from the first lower surface 112 side to the metal members 12 and 13 by, for example, a grinding machine to form the second lower surface 113, thereby forming the second intermediate body. forming a body 102; When forming the second lower surface 113, the lower surface of the solder 60 may be ground so as to be exposed from the first reflecting member 30, and can be performed within the range indicated by the arrow in FIG. 5E.

In the second intermediate formation step S12, the range from the first lower surface 112 side of the base material 11 to the metal members 12 and 13 is removed to expose the lower surface of the solder 60 facing the lower surfaces of the element electrodes 21 and 22, The thickness of the first intermediate 101 is reduced. By removing the metal members 12 and 13 from the first lower surface 112 of the first intermediate 101 to thin the first intermediate 101 and forming the second lower surface 113 to form the second intermediate 102, the thin of the light emitting device 100 can be manufactured. As a method for removing the range up to the metal members 12 and 13 when forming the second lower surface 113, a known method such as grinding, etching, cutting, or blasting can be used. Here, it is preferable to use grinding as a method for removing up to the metal members 12 and 13 . By doing so, the lower surface of the first reflecting member 30 and the lower surface of the solder 60 are on the same plane, and the second lower surface 113, which is the lower surface of the second intermediate body 102, becomes flat. Therefore, when manufacturing a plurality of light emitting devices 100, variations in the light emitting devices 100 can be suppressed.
After forming the second lower surface 113 , a cleaning process may be performed so that grinding dust does not remain attached to various portions of the second intermediate 102 . The cleaning step can be performed by blowing air onto the second intermediate 102, or by immersing it in a cleaning liquid or by spraying it with a cleaning liquid (including solid carbon dioxide).

(Step of forming external connection electrodes)
As shown in FIG. 5F, an external connection electrode forming step S13 is performed. The external connection electrode forming step S<b>13 is a step of forming a pair of external connection electrodes 71 and 72 covering the solder 60 on the second lower surface 113 . The pair of external connection electrodes 71 and 72 are two electrodes functioning as positive and negative electrodes. Therefore, the second intermediate body 102 includes a pair of external connection electrodes 71 and 72 separated from each other so as to form a pair of positive and negative electrodes. The pair of external connection electrodes 71 and 72 before singulation may be separated from or connected to the adjacent pair of external connection electrodes 71 and 72 . The external connection electrodes 71 and 72 may be formed of a metal layer or a metal plate so long as they can be electrically connected.

As a method for forming the pair of external connection electrodes 71 and 72, known methods such as sputtering, vapor deposition, and plating can be used. Alternatively, metal plates may be attached to the lower surfaces of the element electrodes 21 and 22 as the external connection electrodes 71 and 72 . Here, it is preferable to use sputtering as a method of forming the pair of external connection electrodes 71 and 72 . By using sputtering in this manner, the bonding strength between the second lower surface 113 and the external connection electrodes 71 and 72 can be easily improved, thereby suppressing the peeling of the external connection electrodes 71 and 72 from the second lower surface. When forming the pair of external connection electrodes 71 and 72 by sputtering, a mask or the like may be used to prevent the pair of external connection electrodes 71 and 72 from being connected and short-circuited.
When forming the external connection electrodes 71 and 72, after forming a continuous covering metal layer, at least part of the metal layer may be removed so as to form the pair of external connection electrodes 71 and 72. . Thereby, a pair of external connection electrodes 71 and 72 electrically connected to the device electrodes 21 and 22 via the solder 60 can be formed. As a method for partially removing the metal layer, known methods such as laser light irradiation, etching, and blasting can be used.

Laser light irradiation is preferably used as a method for partially removing the metal layer. A metal layer can be patterned by irradiating a laser beam without using a mask or the like. Laser ablation can be caused by irradiating the metal layer with laser light. This removes part of the metal layer. By irradiating the laser beam, the metal layer is patterned, and the metal layer can be used as an external connection electrode. Note that laser ablation is a phenomenon in which the surface of a solid is removed when the irradiation intensity of the laser beam irradiated on the surface of the solid exceeds a certain level (threshold value).
When laser light irradiation is used as a method for partially removing the metal layer, the wavelength of the laser light may be selected to have a low reflectance with respect to the metal layer, for example, a wavelength with a reflectance of 90% or less. preferable. For example, when the outermost surface of the metal layer is Au, it is preferable to use a laser with an emission wavelength shorter than the green region (eg, 550 nm) rather than a red region (eg, 640 nm). Thereby, ablation can be efficiently generated, and mass productivity can be improved.
In addition, in the external connection electrode forming step S13, the lower surface of the solder 60 exposed from the first reflecting member 30 when the second lower surface 113 is formed is used as it is without newly providing the external connection electrodes 71 and 72. You may do so.

(Singulation process)
As shown in FIG. 5G , the singulation step S<b>14 is a step of singulating each light emitting device 100 . In this step S14, the first reflecting member 30 is cut along the side surfaces of the adjacent light emitting elements 20 in the second intermediate 102 by a blade dicing method, a laser dicing method, or the like, so that each light emitting device 100 is cut. Individualized. By doing so, a plurality of light emitting devices 100 can be manufactured.

<Second embodiment>
A light emitting device 100A according to the second embodiment will be described with reference to FIGS. 6A and 6B.
Note that the light emitting device 100A has the same structure as the already described two light emitting devices 100 in series.
The light-emitting device 100A includes a first light-emitting element 20A1 and a second light-emitting element 20A2, and a first light-transmitting member 50A1 and a second light-transmitting member 50A2, respectively. It is configured to be formed facing the .

The first light emitting element 20A1 and the second light emitting element 20A2 are arranged apart from each other along a straight line. The first light emitting element 20A1 and the second light emitting element 20A2 may be used in parallel to emit light of the same color, or may be used in parallel to emit light of different colors. When the emission peak wavelengths of the first light emitting element 20A1 and the second light emitting element 20A2 are the same, the emission peak wavelengths of the first light emitting element 20A1 and the second light emitting element 20A2 are in the range of 430 nm or more and less than 490 nm (the wavelength in the blue region). range). Further, when the emission peak wavelengths of the first light emitting element 20A1 and the second light emitting element 20A2 are different, the first light emitting element 20A1 having an emission peak wavelength in the range of 430 nm or more and less than 490 nm (the wavelength range of the blue region), The second light emitting element 20A2 may have an emission peak wavelength in the range of 490 nm or more and 570 nm or less (the wavelength range of the green region). By doing so, it is possible to improve the color reproducibility of the light emitting device 100A. It should be noted that a variation of about ±10 nm is allowed when the emission peak wavelength is the same.

The first light-transmitting member 50A1 and the second light-transmitting member 50A2 have the same configuration as the light-transmitting member 50 already described, and face the upper surfaces of the first light emitting element 20A1 and the second light emitting element 20A2, respectively. It is formed by The first translucent member 50A1 and the second translucent member 50A2 may be formed with the same configuration or may be formed with different configurations. If the configurations of the first translucent member 50A1 and the second translucent member 50A2 are different, for example, the included wavelength conversion particles can be changed. Alternatively, one of the first translucent member 50A1 and the second translucent member 50A2 may be provided with wavelength conversion particles, and the other may be configured without wavelength conversion particles. The first reflecting member 30 exposes the upper surfaces of the first light-transmitting member 50A1 and the second light-transmitting member 50A2, and the side surfaces of the first light-emitting element 20A1 and the second light-emitting element 20A2 are the first light-transmitting members. It is formed so as to be integrally covered with the optical member 40 interposed therebetween.

The external connection electrodes 71A, 72A, and 73A are formed on the lower surface of the first reflecting member 30 at three locations so as to face the lower surface of the solder 60 and be electrically connected. The first external connection electrode 71A is formed so as to be connected to the solder 60 facing the lower surface of one element electrode 21 of the first light emitting element 20A1. Also, the third external element electrode 73A is formed so as to be connected to the solder 60 facing the lower surface of the other element electrode 22 of the second light emitting element 20A2. Further, the second external connection electrode 72A is composed of solder 60 facing the lower surface of the other element electrode 22 of the first light emitting element 20A and solder 60 facing the lower surface of the one element electrode 21 of the second light emitting element 20A2. is formed between the first external element electrode 71A and the third external element electrode 73A so as to connect to . The first light emitting element 20A1 and the second light emitting element 20A2 are configured so that they can be connected in series or in parallel by changing the positions of the positive and negative device electrodes 21 and 22 .

Next, a method for manufacturing the light emitting device 100A according to the second embodiment will be described.
The light emitting device 100A is basically the same as the manufacturing method of the light emitting device already described. In the step of forming the first reflecting member 30, the upper surfaces of the first translucent member 50A1 and the second translucent member 50A2 are exposed. The first reflecting member 30 integrally covers the side surface of the solder 60, the electrode forming surface, and the side surfaces of the first light emitting element 20A1 and the second light emitting element 20A2 via the first light guide member 40. is formed as
When performing the singulation process, the light emitting device 100A can be manufactured by singulating so as to include a plurality (two) of the light emitting elements 20 (the first light emitting element 20A1 and the second light emitting element 20A2).
In the light-emitting device 100A, the external connection electrodes 71A, 72A, and 73A are connected to the device electrodes 21 and 22 through the solder 60, so that the area of the solder 60 that widens toward the lower surface is the lower surface of the device electrodes 21 and 22. , the heat dissipation of the light-emitting device is improved. Furthermore, since the light emitting device 100A can use a plurality of light emitting elements (two in the drawing), it is possible to improve color reproducibility.

<Third Embodiment>
Next, a light emitting device 100B according to a third embodiment will be described with reference to FIGS. 7A and 7B. In the following description, the first light emitting element 20A1 and the second light emitting element 20A2 may be described as the light emitting elements 20 in some cases.
The light emitting device 100B is different from the configuration of 100A described above in that it includes a first reflecting member 30B, a second reflecting member 90, a first light guide member 40B, and a second light guide member 41B, and one transparent light emitting device 100B. The difference is that the optical member 50B is formed so as to face the upper surfaces of the first light emitting element 20A1 and the second light emitting element 20A2. In addition, the same code|symbol may be attached|subjected about the already demonstrated structure, and description may be abbreviate|omitted suitably.

One translucent member 50B is arranged to face a plurality of light extraction surfaces 201A1 of the first light emitting element 20A1 and light extraction surfaces 201A2 of the second light emitting element 20A2. The translucent member 50B is provided on the light extraction surface 201A1 of the first light emitting element 20A1 and the light extraction surface 201A2 of the second light emitting element 20A2 via the first light guide member 40B. The translucent member 50B includes a translucent layer 52B and a wavelength conversion layer 51B. Also, the wavelength conversion layer 51B includes a first wavelength conversion layer 510B1 and a second wavelength conversion layer 510B2. Although the translucent member 50B has a different size, it has the same configuration as the translucent member 50 already described.

The first light guide member 40B is formed so as to face each of the light extraction surface 201A of the first light emitting element 20A1 and the light extraction surface 201A2 of the second light emitting element 20A2. The first light guide member 40B is also formed on the second light guide member 41B. The first light guide member 40B is formed such that the portion above the second light guide member 41B is thicker than the portion facing the light extraction surface 201A and the light extraction surface 201A2.
The second light guide member 41B is formed continuously below the first light guide member 40B so as to cover all or part of the side surface of the element substrate 24 of the light emitting element 20 . The first light guide member 40B and the second light guide member 41B may be made of the same material as the already explained first light guide member 40, or may be made of different materials from among the above-described members. may

The first reflecting member 30B covers a part of the side surface of the element substrate 24 and the entire side surface of the semiconductor laminate 23, and also covers the electrode forming surface 203 of the light emitting element 20 and the side surface of the solder 60. , below the second light guide member 41B. Also, the lower surface of the first reflecting member 30B is formed so as to be flush with the lower surface of the solder 60 and the lower surface of the second reflecting member 90 .
The second reflecting member 90 is formed in a frame shape so as to cover the side surface of the translucent member 50B, the side surface of the first light guide member 40B, the side surface of the second light guide member 41B, and the side surface of the first reflecting member 30B. It is The second reflecting member 90 forms the outer surface of the light emitting device 100B.
The first reflecting member 30B and the second reflecting member 90 can be made of the same material as the first reflecting member 30 already described. Also, the first reflecting member 30B and the second reflecting member 90 can be made of different materials already described. When the first reflecting member 30B contains a white pigment in the base material, it is preferable that the white pigment is unevenly distributed on the lower surface side of the external connection electrode. By doing so, the light from the light emitting element 20 is less likely to be blocked by the white pigment, and the light extraction efficiency of the light emitting device 100B is improved.

The external connection electrodes 71B, 72B, 73B are formed so as to face the lower surface of the solder 60 facing the lower surface of the device electrodes 21, 22 and be electrically connected. The first external connection electrode 71B is formed so as to be connected to the solder 60 facing the lower surface of one element electrode 21 of the first light emitting element 20A1. Also, the third external connection electrode 73B is formed so as to be connected to the solder 60 facing the lower surface of the other element electrode 22 of the second light emitting element 20A2. Furthermore, the second external connection electrode 72B is connected to the solder 60 facing the lower surface of the other element electrode 22 of the first light emitting element 20A1 and to the solder 60 facing the lower surface of the one element electrode 21 of the second light emitting element 20A2. It is formed between the first external connection electrode 71B and the third external connection electrode 73B so as to do. The first light emitting element 20A1 and the second light emitting element 20A2 are configured so that they can be connected in series or in parallel by changing the positions of the positive and negative device electrodes 21 and 22 .

Next, a method for manufacturing the light emitting device according to the third embodiment will be described with reference to FIGS. 8 to 9H.
The manufacturing method of the light-emitting device is manufactured in the same steps as the flow chart of the manufacturing method already described, but the content of each step may be different. In particular, the first intermediate preparation step of preparing the first intermediate differs in the following points. That is, in the first intermediate preparation step, the light emitting element substrate connection step S111, the first reflection member formation step S112, the second light guide member formation step S113, the first light guide member formation step S114, and the translucent A flexible member forming step S115, a groove forming step S116, and a second reflecting member groove filling step S117 are performed.

As shown in FIGS. 9A and 9B, in the first intermediate preparation step S11, a light emitting element substrate connecting step S111 is performed. In the light emitting element substrate connecting step S111, the pair of element electrodes 21 and 22 of the light emitting element 20 are connected to the pair of metal members 12 and 13 of the support 10 via the solder 60. FIG. That is, the pair of element electrodes 21 and 22 of the first light emitting element 20A1 are connected to one pair of metal members 12 and 13 of the support 10 via the solder 60 . A pair of device electrodes 21 and 22 of the second light emitting device 20A2 are connected to the other pair of metal members 12 and 13 on the support 10 . The first light emitting element 20A1 and the second light emitting element 20A2 are connected to all the metal members 12 and 13 formed on the base material 11 of the support 10 via solder 60 in the same manner as described above.

Next, as shown in FIGS. 9C and 9D, in the first intermediate preparation step S11, a first reflection member formation step S112 and a second light guide member formation step S113 are performed. In the first reflecting member forming step S112, the first reflecting member 30B is formed so as to extend beyond the semiconductor laminate 23 of the light emitting device 20 and up to a portion of the element substrate 24. FIG. Further, in the second light guide member forming step S113, the second light guide member 41B is formed on the first reflecting member 30B so as to cover the side surface of the element substrate 24 up to the height of the upper surface of the element substrate 24. The first reflecting member forming step S112 and the second light guiding member forming step S113 may be separate steps or may be performed in the same step. When the same process is performed, the first reflecting member 30B is formed up to the height of the second light guide member 41B, and the reflecting member contained in the first reflecting member 30B, for example, a white pigment is precipitated. The upper layer side is formed as the second light guide member 41B, and the lower layer side is formed as the first reflecting member 30B.

Next, as shown in FIG. 9E, in the first intermediate preparation step S11, a first light guide member forming step S114 and a translucent member forming step S115 are performed. The first light guide member forming step S114 forms the first light guide member 40B on the light extraction surface of the light emitting element 20 and the second light guide member 41B. The first light guide member 40B is a member capable of joining the translucent member 50B and the light emitting element 20 together. Subsequently, a translucent member forming step S115 is performed. In the translucent member forming step S115, the translucent member 50B is installed so as to cover the light emitting elements 20 connected to the support 10 before the first light guide member 40B is cured. In addition, the first light guide member forming step S114 and the translucent member forming step S115 are performed in a state in which the first light guide member 40B is applied to the translucent member 50B. Alternatively, it may be provided on the optical member 41B.

Next, as shown in FIG. 9F, in the first intermediate preparation step S11, a groove forming step S116 and a second reflecting member groove filling step S117 are performed. In the groove forming step S116, the groove 3B for forming the second reflecting member 90 is formed for each range that is a unit of the light emitting device 50B. The grooves 3B are formed in a lattice shape in the translucent member 50B in a plan view with a groove depth reaching the substrate 11 from the translucent member 50B side. The groove depth of the groove portion 3B is formed, for example, to a position where the base material 11 of the support body 10 is not penetrated. Further, the groove width of the groove portion 3</b>B is within a range where the second reflecting member 90 formed with half the thickness of the groove portion can reflect the light from the light emitting element 20 . The groove portion 3B has the size of a lattice, and as will be described later, when singulated at the center of the groove, one of the lattices is the size of the light emitting device 100B having the first light emitting element 20A1 and the second light emitting element 20A2. It is formed to be a unit.
Next, in the first intermediate preparing step S11, the second reflecting member groove filling step S117 is performed. In the second reflecting member groove portion filling step S117, the second reflecting member 90 is filled in the formed groove portion 3B. Then, the first intermediate 101B is formed by filling the second reflecting member 90 into the groove 3B. The first intermediate body 101B forms a first lower surface 112B whose lower surface is the lower surface of the substrate 11 .

Next, as shown in FIG. 9G, in the second intermediate body forming step S12, the range from the first lower surface 112B side of the first intermediate body 101B to the metal members 12 and 13 is removed by cutting or the like. By cutting from the first lower surface 112B of the first intermediate 101B to a predetermined range, the base material 11 and the metal members 12 and 13 are removed to form a second lower surface 113B, and the second intermediate 102B having the second lower surface 113B to form The second lower surface 113B of the second intermediate 102B is formed so that the lower surface of the first reflecting member 30B and the lower surface of the solder 60 are flush with each other.
Next, as shown in FIG. 9H, in the external connection electrode forming step S13, external connection electrodes 71B, 72B, 73B are formed on the second lower surface 113B of the second intermediate 102B. The external connection electrodes 71B, 72B, and 73B are formed here by means such as sputtering so as to be electrically connected to the first light emitting element 20A1 and the second light emitting element 20A2 via solder 60, respectively.
It is preferable that the second lower surface 113B has a surface roughness larger than that of the side surface of the light emitting device and/or the upper surface of the translucent member. By doing so, the bonding strength between the second lower surface 113B and the external connection electrodes 71B, 72B, 73B can be improved.

Next, in the singulation step S14, the second intermediate 102B is singulated into units of the light emitting device 100B by a blade dicing method, a laser dicing method, or the like. Here, two light emitting elements 20A1 and 20A2 are formed to form one light emitting device 100B. When the second intermediate 102B is separated into pieces, the light emitting device 100B is separated into rectangular parallelepipeds by cutting at the center of the second reflecting member 90 (the center of the groove portion 3B). can be done. In the individualized light emitting device 100B, the translucent member 50B is arranged in the center as the light extraction surface of the device, and the perimeter of the translucent member 50B is surrounded by the second reflecting member 90 in a frame shape as the outer surface. Appearance state.
In the light-emitting device 100B, the external connection electrodes 71B, 72B, and 73B are connected to the element electrodes 21 and 22 through the solder 60, so that the area of the solder 60 that widens toward the lower surface is the lower surface of the element electrodes 21 and 22. , the heat dissipation of the light-emitting device is improved. Furthermore, since a plurality of light emitting elements can be used in the light emitting device 100B, color reproducibility can be improved.
In the light emitting device 100B, the first reflecting member 30B is positioned so as to cover the electrode forming surface 203 of the light emitting element 20, thereby reflecting the light from the light emitting element 20 toward the translucent member 50B and improving the light extraction efficiency. can be made

In the light-emitting device 100B, when the light emission peak wavelengths of the first light-emitting element 20A1 and the second light-emitting element 20A2 are the same, the light from the first light-emitting element 20A1 and the light from the second light-emitting element 20A2 pass through the second light guide member. By guiding the light to 41B, luminance unevenness between the first light emitting element 20A1 and the second light emitting element 20A2 can be suppressed. Further, when the emission peak wavelengths of the first light emitting element 20A1 and the second light emitting element 20A2 are different, the light from the first light emitting element 20A1 and the light from the second light emitting element 20A2 are guided to the second light guide member 41B. By being illuminated, the color mixing property of the light emitting device 100B can be improved. In addition, the light-emitting device 100B has improved heat dissipation because the second external connection electrode 72B located in the center of the second lower surface 113B serves as a heat dissipation portion.

<Fourth Embodiment>
Alternatively, a light emitting device 100C having a structure similar to that of the light emitting device 100A may be manufactured by a manufacturing method as shown in FIGS. 10 and 11A to 11F.
The method for manufacturing the light emitting device includes a first intermediate preparing step S11, a first cut groove forming step S118, a second intermediate forming step S12, an external connection electrode forming step S13, and a singulation step (second cutting). groove formation step) S14. In the first intermediate preparation step S11, for example, as shown in FIG. 11A, the first reflecting member 30 is supplied so as to cover the upper surface of the translucent member 50 and is cured. Then, as shown in FIG. 11B, the first reflecting member 30 is ground so that the top surface of the translucent member 50 is exposed so that the top surface of the first reflecting member 30 and the top surface of the translucent member 50 are flush with each other. The first intermediate 101 is prepared by doing so.

Subsequently, as shown in FIG. 11C, the first cut groove forming step S118 is a step of forming the first cut grooves 3C1 at intervals when singulating the first reflecting member 30 as described later. In the first groove forming step S118, as shown in FIG. 11C, a first groove 3C1 is formed with a predetermined width and a predetermined depth from the upper surface side of the first reflecting member 30 through a cutting tool such as a blade. be. The first cut groove 3C1, along with a second cut groove 3C2 described later, forms a side surface of the first reflecting member 30 that becomes a side surface of the light emitting device 100C when a part of the inner surface of the groove is singulated. becomes. Here, the first cut groove 3C1 is formed with a groove depth or groove width that can be handled by a handler or the like without separating adjacent light emitting devices by the first reflecting member 30 in the next step. is desirable.
If there is a mark on the upper surface of the base material that serves as a reference for positioning the light emitting element 20 and/or the translucent member 50, the first cut groove 3C1 may be formed using this mark as a reference. By doing so, the positional accuracy of the first cut groove 3C1 with respect to the light emitting element 20 and/or the translucent member 50 can be improved.

The second intermediate formation step S12 and the external connection electrode formation step S13 have already been described, except that the first cut groove 3C1 is formed in the second intermediate 102C, as shown in FIGS. 11D and 11E. It is the same process as the process. In the singulation step S14, as shown in FIG. 11F, the light emitting device 100C is singulated by cutting at the position of the first cut groove 3C1. In the singulation step S14, a second cut groove 3C2 facing the first cut groove 3C1 from the lower surface side of the first reflecting member 30 is formed by a cutting tool such as a blade, thereby singulating each light emitting device 100C. there is As an example, the second grooves 3C2 formed in the singulation step S14 are formed so as to be wider than the first grooves 3C1 and shallower than the first grooves 3C2. there is In the singulation step S14, by forming the first cut groove 3C1 and the second cut groove 3C2 which are formed in advance, the portion of the first reflecting member 30 is cut and singulated into each light emitting device 100C. there is In addition, in the singulation step S14, the singulation is performed by forming the second grooves 3C2, so the cutting time and the amount of chips are reduced compared to cutting the entire first reflecting member 30 in the thickness direction. done.

<Fifth Embodiment>
Furthermore, the light emitting device 100D may be manufactured by a manufacturing method as shown in FIGS. 12 and 13A to 13H.
A method for manufacturing a light-emitting device includes a first intermediate preparing step S11, a first groove forming step S118, a second intermediate forming step S12, a support substrate connecting step S121, a second groove forming step S122, It is performed by a procedure including an external connection electrode forming step S13 and a singulation step S14. In addition, in the singulation step S14, a third groove forming step S141 and a supporting substrate removing step S142 are performed. The external connection electrodes 171 and 172 may be formed to extend from the second lower surface 113 to at least part of the side surfaces of the first reflecting member 30 . The external connection electrodes 171 and 172 are formed so as to have side electrode portions 171a and 172a with respect to the external connection electrodes 71 and 72 already described.

In the method for manufacturing a light-emitting device, as shown in FIGS. 12 and 13A to 13C, the first intermediate preparing step S11, the first groove forming step S118, and the second intermediate forming step S12 are the steps already described. I am doing the same process. Further, in the second intermediate formation step S12, the groove depth of the first cut groove 3D1 is formed to be shallower than that described above. Since the first cut groove 3D1 is singulated by the third cut groove 3D3 described later, even if the groove depth is shallow, it helps suppress chips during singulation and improve the processing speed. can be done.
The supporting substrate connecting step S121 is a step of supporting the second intermediate 102D with the upper surface of the first reflecting member 30 having the first groove 3D1 formed thereon directed toward the supporting substrate 11D, as shown in FIG. 13D. In this support substrate connecting step S121, the second intermediate 102D is supported on the support substrate 11D via an adhesive G1 such as an ultraviolet curable resin for temporary fixing. That is, the second intermediate body 102D is supported in a state of being temporarily fixed to the support substrate 11D via the adhesive G1 with the second lower surface 113 facing upward.

As shown in FIG. 13E, in the second groove forming step S122, the second groove 3D2 is formed so as to face the first groove 3D1 from the second lower surface 113 of the second intermediate body 102D supported by the support substrate 11D. It is a step of forming In the second groove forming step S132, the second grooves 3D2 are formed to have a groove width larger than that of the first grooves 3D1 and a groove depth equal to or greater than that of the first grooves 3D1. The second groove 3D2 is formed such that the center of the groove substantially coincides with that of the first groove 3D1, and is formed away from the groove bottom of the first groove 3D1. In addition, the second groove 3D2, together with the first groove 3D1 described above and the third groove 3D3 described later, forms part of the inner surface of the groove when singulated into a side surface (the third groove) of the light emitting device 100D. 1 side surface of the reflecting member 30). The second cut groove 3D2 may be formed on at least one side surface of the light emitting device. For example, when the light emitting device after singulation is rectangular in bottom view, the second cut grooves 3D2 may be positioned only on the short sides of the outer edge of the light emitting device, or may be positioned only on the long sides. It may well be located on the short side and the long side.

As shown in FIGS. 13F and 13G, the external connection electrode forming step S13 is a step of forming the external connection electrodes 171 and 172 in the second lower surface 113 and the second grooves 3D2. The external connection electrode forming step S13 is provided, for example, by sputtering so that the external connection electrodes 171 and 172 are formed separately along the solder 60 facing the lower surfaces of the device electrodes 21 and 22 . Here, after forming a metal layer 170 continuous to the solder 60 facing the lower surfaces of the device electrodes 21 and 22 , at least a portion of the metal layer 170 is removed to form a metal layer continuous to the device electrode 21 via the solder 60 . The layer 170 and the metal layer 170 continuous to the device electrode 22 via the solder 60 are spaced apart from each other.

Moreover, the metal layer 170 is also provided by sputtering in the groove in the second cut groove 3D2. One of the external connection electrodes 171 is cut by a third groove 3D3 during singulation, which will be described later. A lower surface electrode portion 171b is formed on one element electrode 21 continuously with the electrode portion 171a with a solder 60 interposed therebetween. Similarly, the other external connection electrode 172 is cut by a third cut groove 3D3 during singulation, which will be described later. A lower surface electrode portion 172b is formed continuously from the side surface electrode portion 172a and formed on the other element electrode 22 with solder 60 interposed therebetween.
When the light emitting device after singulation is rectangular in bottom view, the side electrode portions 172a may be positioned only on the short sides of the outer edge of the light emitting device, may be positioned only on the long sides, or may be positioned only on the long sides. It may be located on the side and the long side. Note that the side electrode portion 172a and the lower electrode portion 172b may be in contact with each other or may be separated from each other. By bonding the side electrode 172a of the light emitting device and the mounting substrate with the bonding member, the bonding strength between the light emitting device and the mounting substrate can be improved.

The singulation step S14 is a step of singulating for each light emitting device 100D. The singulation step S14 includes a third groove formation step S141 and a support substrate removal step S142.
As shown in FIG. 13G, the third groove forming step S141 is smaller than the groove width of the second groove 3D2 so as to cut a part of the metal layer 170 provided in the second groove 3D2, and A third groove 3D3 having a groove width larger than that of the first groove 3D1 is formed by a cutting tool such as a blade. By forming the third grooves 3D3 in the first reflecting member 30 in the singulation step S14, the inner side surface of the first reflecting member 30 formed by the second grooves 3D2 and the third grooves 3D3 A side electrode portion 172a can be formed.

As shown in FIG. 13H, the supporting substrate removing step S142 is a step of removing the supporting substrate 11D of the first reflecting member 30 in which the third grooves 3D3 are formed. In the support substrate removing step S142, as an example, since an ultraviolet curable resin is used as the adhesive G1, the light emitting devices 100D are separated from the adhesive G1 by irradiating ultraviolet rays, and the support substrate 11D is removed. Therefore, each light emitting device 100D is singulated.
In the light emitting device 100D formed by the manufacturing method described above, the lower electrode portions 171b and 172b formed on the second lower surface 113 and the side electrode portions 171a and 172a formed on the side surfaces of the first reflecting member 30 are externally connected. It can be electrodes 171 and 172 . Therefore, in the light-emitting device 100D, the range of types of external devices that can be connected by the external connection electrodes 171 and 172 can be expanded.

In each of the embodiments described above, the external connection electrodes may be formed on the second lower surface 113 side as shown in FIGS. 14A to 14C.
That is, as shown in FIG. 14A, the external connection electrodes 71C and 72C are separated from one side and the other side of the second lower surface 113 and are continuous to the ends of the second lower surface 113 at both ends in the longitudinal direction and both ends in the lateral direction. It may be formed by

In addition, as shown in FIG. 14B, the external connection electrodes 71D and 72D are formed continuously to the end of the second lower surface 113 at both ends in the longitudinal direction except for a part, and at both ends in the lateral direction, the second electrodes 71D and 72D are formed continuously. It may be formed away from the edge of the lower surface. The external connection electrodes 71D and 72D are formed continuously to the end of the second lower surface at both ends in the longitudinal direction except for a part, and are formed continuously to the end of the second lower surface 113 at one end in the lateral direction. It may be formed continuously, and the other end in the width direction may be formed in a state separated from the end of the second lower surface 113 .
Furthermore, as shown in FIG. 14C, the external connection electrodes 71E and 72E are formed continuously to the ends of the second lower surface 113 at both ends in the width direction, and are formed apart from the ends at both ends in the longitudinal direction. may have been
The external connection electrodes described with reference to FIGS. 14A, 14B, and 14C may be formed together with the already-described side electrode portions on the side surfaces of the first reflecting member 30 . For example, when the light emitting device is rectangular in bottom view, the side electrode portions may be positioned only on the short sides of the outer edge of the light emitting device, or may be positioned only on the long sides. may be located in The side electrode portion and the bottom electrode portion may be in contact with each other or may be separated from each other.

Also, the metal member may be configured as shown in FIGS. 15A to 15D.
That is, as shown in FIGS. 15A and 15B, the metal members 12A1 and 13A1 may have projections, and the upper surfaces of the projections may have depressions 12a and 13a. Since the dents 12a and 13a are formed in the convex portions of the metal members 12A1 and 13A1, when the amount of the solder 60 applied for bonding to the device electrodes 21 and 22 of the light emitting element 20 is large, the dents 12a and 13a become excessive. The solder 60 can be adjusted by entering.
Furthermore, as for the shape and number of depressions, as shown in FIG. 15C, a plurality of substantially circular depressions 12b and 13b may be formed in the metal members 12B1 and 13B1.
The shape of the depression may be depressions 12c and 13c continuous from one end to the other end in the center of the metal members 12C1 and 13C1, as shown in FIG. 15D.
The depressions 12a to 12c and 13a to 13c can be adjusted by inserting extra solder 60 thereinto. The shape of the depression in top view is not particularly limited, and may be circular, elliptical, polygonal, or the like, for example.

In each of the above-described embodiments, the support 10 has a planar shape without forming protrusions at positions where the metal members 12 and 13 face the lower surfaces of the element electrodes 21 and 22 of the light emitting element 20. good too. When planar metal members 12 and 13 are used, they are preferably formed so as to have an area larger than that of the device electrodes 21 and 22 .
Further, in the third embodiment, when the second light guide member and the first reflecting member are formed by settling the reflecting member such as the white pigment of the first reflecting member 30B, the manufacturing method , the number of steps can be reduced, and the need to prepare the second light guide member 41B independently is eliminated, thereby simplifying the equipment.

Furthermore, it is preferable that the light emitting device 100 has a structure in which the polarity can be determined from the appearance. As a result, when the light-emitting device 100 is stored in a desired direction in a carrier tape and transported, or when the light-emitting device 100 is mounted on a mounting substrate in a desired direction, the orientation of the light-emitting device can be easily distinguished. be able to.
Examples of structures that allow polarity discrimination will be described with reference to FIGS. 16A to 16E.

As shown in FIGS. 16A and 16B, the external connection electrodes 171 and 172 have different planar shapes so that their polarities can be determined. For example, in FIG. 16A, the planar shape of each of the external connection electrodes 171 and 172 is changed by providing the electrode non-formation region 5 at the corner C of one of the external connection electrodes 171 and 172 of the rectangular external connection electrodes 171 and 172. making it different. The first reflecting member 30 is exposed in the region where the electrode non-formation region 5 is provided. In FIG. 16A, the corner C has the electrode non-formation region 5, but the electrode non-formation region 5 may be provided at other corners, and the electrode non-formation region 5 may be provided at two or more corners. There may be

In addition, in FIG. 16B , as an example, a rectangular electrode non-formation region 5 is provided on the end face of the external connection electrode 172 so as to reach both sides of the pair of opposing sides of the external connection electrode 172 when viewed from the bottom. The planar shapes and sizes of the electrodes 171 and 172 are different. In the electrode non-formation region 5, the first reflecting member 30 is exposed. Therefore, the formation of the electrode non-formation region 5 makes it possible to easily determine the orientation of the light emitting device because the colors and materials are different, and the difference is visually and textured.

Moreover, the electrode non-formation region 5 can be formed by, for example, the above-described laser beam irradiation. Specifically, in the external connection electrode forming step S13, a metal layer is formed on the entire surface of the second lower surface 113 so as to continuously cover the device electrodes 21 and 22 and the first reflecting member 30 located on the second lower surface 113. After that, the metal layer is irradiated with a laser beam to form the external connection electrodes 171 and 172, and a part of the metal layer located in the electrode non-formation region 5 is removed. By using laser light irradiation, the process can be simplified without using a mask or the like. The electrode non-formation region 5 can be formed by a known method such as etching or blasting other than irradiation with laser light.

As shown in FIGS. 16A and 16B, the electrode non-formation region 5 of the external connection electrode is preferably provided so that the device electrodes 21 and 22 of the light emitting device 20 are not exposed to the outside. For example, when the external connection electrodes 171 and 172 and the electrode non-formation region 5 are formed by using laser light irradiation, this can be easily done under the condition that the metal layers located on the device electrodes 21 and 22 are not laser ablated. can be realized. As a result, even if the element electrodes 21 and 22 of the light-emitting element 20 are made of a material that is easily oxidized, such as copper, the element electrodes 21 and 22 are not exposed to the outside, thereby preventing the element electrodes 21 and 22 from being oxidized. can be suppressed.
In FIGS. 16A and 16B, only the external connection electrode 172 is provided with the electrode non-formation region 5, but both the external connection electrodes 171 and 172 are provided with the electrode non-formation region 5 and have different planar shapes. You can let

In addition, as shown in FIGS. 16C and 16D, the light emitting device 100 has a non-penetrating groove 6 provided in the first reflecting member 30 located on the light emitting surface side so that the polarity of the light emitting device 100 can be determined. . The groove 6 shown in FIG. 16C is formed so as to reach both the pair of opposing outer side surfaces 30B and 30C away from the outer side surface 30A of the light emitting device 100. As shown in FIG. In FIG. 16C, the polarity of the light-emitting device 100 can be easily determined due to the presence of the groove 6 . In addition, since the groove 6 is separated from the outer side surface 30A of the light emitting device 100, it is possible to suppress the thickness of the first reflecting member 30 positioned between the light emitting surface 9 and the outer side surface 30A from being thinned. It is possible to suppress the light from the light emitting element 20 from leaking outside from the first reflecting member 30 located in the area. It can also be said that the groove 6 shown in FIG. 16C is formed as a step in the singulated light emitting device 100 .

Further, the groove 6 shown in FIG. 16D is different from the groove 6 shown in FIG. 16C in that the groove 6 is formed to reach the outer side surface 30A in addition to the pair of opposing outer side surfaces 30B and 30C. Since the groove 6 reaches the outer side surface 30A in addition to the pair of outer side surfaces 30B and 30C facing each other, it is possible to determine the polarity of the light emitting device 100 from the side of the outer side surface 30A.

Note that the groove 6 shown in FIGS. 16C and 16D reaches both the pair of opposing outer side surfaces 30B and 30C, but is not limited to this. The groove 6 may reach only one of the pair of outer side surfaces 30B and 30C, or may be separated from both of the pair of outer side surfaces 30B and 30C. Moreover, the grooves 6 can be formed by laser or dicing, for example.

Furthermore, in FIG. 16E , the polarity of the light emitting device 100 is determined by providing the coloring material 7 on the first reflecting member 30 positioned on the light emitting surface side of the light emitting device 100 . By providing the coloring material 7 on the light emitting surface side of the light emitting device 100, it becomes easy to determine the polarity from the light emitting surface side of the light emitting device 100. FIG. In addition, by not providing the groove 6 or the like in the first reflecting member 30, it is possible to suppress a decrease in the strength of the light emitting device 100. FIG.

The light emitting device according to each embodiment of the present disclosure includes backlight devices for liquid crystal displays, various lighting fixtures, large displays, various display devices such as advertisements and destination guides, projector devices, digital video cameras, facsimiles, and copiers. , an image reading device such as a scanner.

100, 100A, 100B Light emitting device 101, 101A, 101B First intermediate 102, 102A, 102B Second intermediate 10A, 10E Support 11 Base material 12, 13 Metal member 20 Light emitting element 21, 22 Element electrode 23 Semiconductor laminate 24 element substrates 30, 30A, 30B first reflecting member 40 first light guiding member 41 second light guiding member 50, 50A, 50B translucent members 50A1, 50A2 translucent member 90 second reflecting member 70 metal layer 71, 72 external connection electrode 112 first lower surface 113 second lower surface

Claims (20)

A support having a first lower surface including a light emitting element having a pair of element electrodes formed on an electrode forming surface, solder covering lower surfaces of the element electrodes, and a metal member joined to the element electrodes via the solder. providing a first intermediate comprising a body;
removing the support to form a second intermediate body having a second bottom surface including the solder bottom surface;
A method of manufacturing a light emitting device comprising: 2. The method of manufacturing a light emitting device according to claim 1, further comprising the step of forming on said second lower surface a pair of external connection electrodes respectively covering lower surfaces of said solder arranged on lower surfaces of said pair of device electrodes. 3. The method of manufacturing a light-emitting device according to claim 1, wherein the first intermediate has a first reflecting member covering an electrode-formed surface of the light-emitting element. 4. The method of manufacturing a light-emitting device according to claim 3, wherein the external connection electrode is formed to extend from the second lower surface to at least a part of the side surface of the first reflecting member. In the step of preparing the first intermediate,
5. The method of manufacturing a light-emitting device according to claim 1, wherein the metal member has a convex portion at a position overlapping with the element electrode when viewed from above. 6. The method of manufacturing a light-emitting device according to claim 5, wherein the upper surface of the projection has a depression. In the step of preparing the first intermediate,
7. The method of manufacturing a light-emitting device according to claim 1, wherein the support includes an insulating base material and the metal member arranged on the base material. 3. The method of manufacturing a light-emitting device according to claim 2, wherein in the step of forming the external connection electrode on the second lower surface, the external connection electrode is formed by sputtering. In the step of forming the pair of external connection electrodes on the second lower surface, after forming a metal layer continuously covering the pair of device electrodes, part of the metal layer is removed to remove the pair of external connection electrodes. 9. The method of manufacturing a light-emitting device according to claim 8, wherein the one and the other of are formed. a light emitting element comprising a semiconductor laminate having a light extraction surface and an electrode formation surface located on the opposite side of the light extraction surface; and a pair of device electrodes located on the electrode formation surface;
solder covering the lower surface of the device electrode;
a first reflecting member covering the electrode forming surface and the side surface of the solder;
an external connection electrode covering the lower surface of the solder and the lower surface of the first reflecting member;
A light emitting device, wherein the first reflecting member covers the side surface of the light emitting element via a light guide member . 11. The light emitting device according to claim 10, wherein the external connection electrode extends to at least part of the side surface of the first reflecting member. a light emitting element comprising a semiconductor laminate having a light extraction surface and an electrode formation surface located on the opposite side of the light extraction surface; and a pair of device electrodes located on the electrode formation surface;
solder covering the lower surface of the device electrode;
a first reflecting member covering the electrode forming surface and the side surface of the solder;
an external connection electrode covering the lower surface of the solder and the lower surface of the first reflecting member;
The light-emitting device, wherein the external connection electrode extends to at least part of the side surface of the first reflecting member. a light emitting element comprising a semiconductor laminate having a light extraction surface and an electrode formation surface located on the opposite side of the light extraction surface; and a pair of device electrodes located on the electrode formation surface;
solder covering the lower surface of the device electrode;
a first reflecting member covering the electrode forming surface and the side surface of the solder;
The first reflecting member covers the side surface of the light emitting element via a light guide member,
A light-emitting device in which the lower surface of the solder is exposed to the outside. 14. The light emitting device according to claim 10, wherein the lower surface of the solder and the lower surface of the first reflecting member are flush with each other. 14. The light-emitting device according to claim 10, further comprising a translucent member having a lower surface larger than the light-extraction surface of the light-emitting element on the side of the light-extraction surface of the light-emitting element. 16. The light emitting device according to claim 15 , further comprising a light guide member positioned between the lower surface of the translucent member and the light extraction surface of the light emitting element and covering the side surface of the light emitting element. 17. The light emitting device according to claim 16 , further comprising a second reflecting member that covers the side surface of the light emitting element through the light guide member. a light emitting element comprising a semiconductor laminate having a light extraction surface and an electrode formation surface located on the opposite side of the light extraction surface; and a pair of device electrodes located on the electrode formation surface;
solder covering the lower surface of the device electrode;
a first reflecting member covering the electrode forming surface and the side surface of the solder;
an external connection electrode covering the lower surface of the solder and the lower surface of the first reflecting member;
a translucent member having a lower surface larger than the light extraction surface of the light emitting element on the side of the light extraction surface of the light emitting element;
a light guide member located between the lower surface of the translucent member and the light extraction surface of the light emitting element and covering the side surface of the light emitting element;
A light-emitting device comprising a second reflecting member covering a side surface of the light-emitting element through the light-guiding member. a light emitting element comprising a semiconductor laminate having a light extraction surface and an electrode formation surface located on the opposite side of the light extraction surface; and a pair of device electrodes located on the electrode formation surface;
solder covering the lower surface of the device electrode;
a first reflecting member covering the electrode forming surface and the side surface of the solder;
a translucent member having a lower surface larger than the light extraction surface of the light emitting element on the side of the light extraction surface of the light emitting element;
a light guide member located between the lower surface of the translucent member and the light extraction surface of the light emitting element and covering the side surface of the light emitting element;
A second reflecting member that covers the side surface of the light emitting element through the light guide member;
A light-emitting device in which the lower surface of the solder is exposed to the outside. 20. The light emitting device according to any one of claims 10 , 13, or 17 to 19 , comprising a plurality of said light emitting elements.

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