JP7210978B2 - Negative photosensitive resin composition and semiconductor device - Google Patents

Description

The present invention relates to a negative photosensitive resin composition and a semiconductor device.

Various developments have been made so far in the photosensitive resin composition. As this type of technology, for example, the technology described in Patent Document 1 is known. Patent Document 1 describes a photosensitive resin composition containing an epoxy resin, a phenol resin and a photopolymerization initiator (Table 1 of Patent Document 1).

WO2014/010204

However, as a result of investigation by the present inventors, it was found that the photosensitive resin composition described in Patent Document 1 has room for improvement in terms of low-temperature curability, reflow resistance and sensitivity.

As a result of further studies by the present inventors, low-temperature curability is improved by using a thermal acid generator containing an aromatic sulfonium salt in combination with an epoxy resin, a phenoxy resin, and a photoacid generator in a negative photosensitive resin composition. However, the present inventors have found that the reflow resistance and sensitivity can be improved, and have completed the present invention.

（上記一般式（１）中、
Ｒ^１は水素原子、メトキシカルボニル基、アセチル基、ベンゾイル基のいずれか示し、
Ｒ^２は水素原子、ハロゲン原子、炭素数１～４のアルキル基のいずれかを示し、
Ｒ^３は炭素数１～４のアルキル基、炭素数１～４のアルキル基で置換もしくは無置換のベンジル基またはα－ナフチルメチル基のいずれかを示し、
Ｒ^４は炭素数１～４のアルキル基を示す。
ＸはＳｂＦ_６、ＰＦ_６、ＡｓＦ_６、ＢＦ_４、ＣＦ_３ＳＯ_３、（ＣＦ_３ＳＯ_２）_２Ｎ、Ｂ（Ｃ_６Ｆ_５）_４のいずれかを示す。） According to the invention,
A negative photosensitive resin composition for film formation,
epoxy resin;
a phenoxy resin;
a photoacid generator;
a thermal acid generator containing an aromatic sulfonium salt represented by the following general formula (1);
Provided is a negative photosensitive resin composition comprising:

(In the above general formula (1),
R ¹ represents a hydrogen atom, a methoxycarbonyl group, an acetyl group, or a benzoyl group;
R ² represents a hydrogen atom, a halogen atom, or an alkyl group having 1 to 4 carbon atoms,
R ³ represents either an alkyl group having 1 to 4 carbon atoms, a benzyl group substituted or unsubstituted with an alkyl group having 1 to 4 carbon atoms, or an α-naphthylmethyl group;
R ⁴ represents an alkyl group having 1 to 4 carbon atoms.
X represents either _SbF6 , _PF6 , _AsF6 , _{BF4 , CF3SO3 , ( CF3SO2} )2N, or B _{( C6F5} ) ₄ . )

According to the invention,
a semiconductor chip;
a rewiring layer provided on the surface of the semiconductor chip,
A semiconductor device is provided in which the insulating layer in the rewiring layer is composed of a cured product of the negative photosensitive resin composition.

ADVANTAGE OF THE INVENTION According to this invention, the negative photosensitive resin composition excellent in low temperature curability, reflow resistance, and sensitivity, and a semiconductor device using the same are provided.

1 is a longitudinal sectional view showing an example of the configuration of a semiconductor device of this embodiment; FIG. FIG. 2 is a partially enlarged view of the area enclosed by the dashed line in FIG. 2A to 2C are process diagrams showing a method of manufacturing the semiconductor device shown in FIG. 1; 2A to 2C are diagrams for explaining a method of manufacturing the semiconductor device shown in FIG. 1; FIG. 2A to 2C are diagrams for explaining a method of manufacturing the semiconductor device shown in FIG. 1; FIG. 2A to 2C are diagrams for explaining a method of manufacturing the semiconductor device shown in FIG. 1; FIG. It is a partially enlarged cross-sectional view showing a first modification of the semiconductor device according to the embodiment. It is a partially enlarged cross-sectional view showing a second modification of the semiconductor device according to the embodiment.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, in all the drawings, the same constituent elements are denoted by the same reference numerals, and the description thereof will be omitted as appropriate. Also, the drawings are schematic diagrams and do not correspond to actual dimensional ratios.

The outline of the photosensitive resin composition of this embodiment is shown.
The photosensitive resin composition of the present embodiment comprises an epoxy resin, a phenoxy resin, a photoacid generator, a thermal acid generator containing a predetermined aromatic sulfonium salt, and a negative photosensitive resin composition for film formation. is.

According to the findings of the present inventors, by using a thermal acid generator containing an aromatic sulfonium salt and a photoacid generator in combination, 170 ° C., which is much lower than the general curing temperature of about 230 ° C., can be obtained. It was found that even in , it exhibits good curing properties, that is, low-temperature curability. In addition, although the detailed mechanism is not clear, it is believed that the acid generated from the photoacid generator during exposure causes a slight amount of acid to be generated from the thermal acid generator as well, thereby increasing the sensitivity.

Therefore, the negative photosensitive resin composition of the present embodiment (hereinafter also simply referred to as "photosensitive resin composition") has good sensitivity and excellent low-temperature curability, so it can be cured at low temperatures. can improve reflow resistance when using a cured film cured with

According to the photosensitive resin composition of the present embodiment, heat resistance reliability and patterning property can be improved, so that a semiconductor device excellent in connection reliability and an electronic device using the semiconductor device can be realized.

Moreover, the photosensitive resin composition of the present embodiment is expected to be suitably used for forming an insulating layer of a rewiring layer formed on a semiconductor chip or the like.

The resin film of the photosensitive resin composition of the present embodiment is used as, for example, a permanent film, a protective film, an insulating film, a rewiring material, etc. in electrical/electronic equipment (electronic devices). This resin film includes a cured film cured by heating.

Here, “electrical/electronic equipment” refers to electronic Elements, devices, final products, and other equipment related to electricity in general that apply engineering technology.

Among these, the photosensitive resin composition of the present embodiment can be suitably used, for example, as a photosensitive resin composition for a bump protective film. Resin films provided around electrical connection elements such as bumps, lands, and wiring are collectively referred to as "bump protection films." A photosensitive resin composition for a bump protective film refers to a resin composition used for forming a bump protective film.

Concrete examples of the bump protective film include passivation films, overcoat films, interlayer insulating films, etc., which are provided around electrical connection elements. Further, the resin film is provided on the semiconductor chip, but may be provided in the vicinity of the semiconductor chip, and may be provided at a position away from the semiconductor chip such as a rewiring layer or a build-up wiring layer. It may be provided.

Next, the details of the photosensitive resin composition of the present embodiment will be described.
(Epoxy resin)
The photosensitive resin composition of this embodiment contains an epoxy resin. Thereby, the physical properties and workability of the resin film of the photosensitive resin composition can be improved.

As the epoxy resin, for example, an epoxy resin having two or more epoxy groups in one molecule can be used. Monomers, oligomers, and polymers in general can be used as epoxy resins, and their molecular weights and molecular structures are not particularly limited.
Examples of the epoxy resin include phenol novolak type epoxy resin, cresol novolak type epoxy resin, cresol naphthol type epoxy resin, biphenyl type epoxy resin, biphenyl aralkyl type epoxy resin, phenoxy resin, naphthalene skeleton type epoxy resin, bisphenol A type epoxy resin. resin, bisphenol A diglycidyl ether type epoxy resin, bisphenol F type epoxy resin, bisphenol F diglycidyl ether type epoxy resin, bisphenol S diglycidyl ether type epoxy resin, glycidyl ether type epoxy resin, cresol novolak type epoxy resin, aromatic poly Functional epoxy resins, aliphatic epoxy resins, aliphatic polyfunctional epoxy resins, alicyclic epoxy resins, polyfunctional alicyclic epoxy resins, and the like. Epoxy resins may be used singly or in combination.

Epoxy resins can include solid epoxy resins having two or more epoxy groups in the molecule. As the solid epoxy resin, those having two or more epoxy groups and being solid at 25° C. (room temperature) can be used. Thereby, the mechanical properties of the resin film of the photosensitive resin composition can be enhanced.

In addition, the epoxy resin may contain a polyfunctional epoxy resin having three or more functionalities in the molecule (that is, a polyfunctional epoxy resin having three or more epoxy groups in one molecule).

Examples of trifunctional or higher polyfunctional epoxy resins include phenol novolak type epoxy resin, cresol novolak type epoxy resin, triphenylmethane type epoxy resin, dicyclopentadiene type epoxy resin, bisphenol A type epoxy resin, and tetramethylbisphenol F. It preferably contains one or more epoxy resins selected from the group consisting of type epoxy resins, and more preferably contains novolac type epoxy resins. This makes it possible to realize an appropriate coefficient of thermal expansion while improving the heat resistance of the resin film.

Epoxy resins can also include liquid epoxy resins having two or more epoxy groups in the molecule. The liquid epoxy resin functions as a film-forming agent and can improve the brittleness of the resin film of the photosensitive resin composition.

As the liquid epoxy resin, an epoxy compound having two or more epoxy groups and being liquid at room temperature of 25° C. can be used. The viscosity of this liquid epoxy resin at 25° C. is, for example, 1 mPa·s to 8000 mPa·s, preferably 5 mPa·s to 1500 mPa·s, and more preferably 10 mPa·s to 1400 mPa·s. .

The liquid epoxy resin may include, for example, one or more selected from the group consisting of bisphenol A diglycidyl ether, bisphenol F diglycidyl ether, alkyldiglycidyl ether and alicyclic epoxy. These may be used alone or in combination of two or more. Among these, alkyldiglycidyl ethers can be used from the viewpoint of reducing cracks after development.

The epoxy equivalent of the liquid epoxy resin is, for example, 100 g/eq or more and 200 g/eq or less, preferably 105 g/eq or more and 180 g/eq or less, and more preferably 110 g/eq or more and 170 g/eq or less. This can improve the brittleness of the resin film.

The lower limit of the content of the liquid epoxy resin is, for example, 5% by mass or more, preferably 10% by mass or more, and more preferably 15% by mass or more, based on the total nonvolatile components of the photosensitive resin composition. is. This can improve the brittleness of the finally obtained cured film. On the other hand, the upper limit of the content of the liquid epoxy resin is, for example, 40% by mass or less, preferably 35% by mass or less, more preferably 30% by mass, based on the total nonvolatile components of the photosensitive resin composition. It is below. Thereby, the film properties of the cured film can be balanced.

The lower limit of the content of the epoxy resin is, for example, 40% by mass or more, preferably 45% by mass or more, more preferably 50% by mass or more, relative to the total nonvolatile components of the photosensitive resin composition. be. Thereby, the heat resistance and mechanical strength of the finally obtained cured film can be improved. On the other hand, the upper limit of the content of the epoxy resin is, for example, 90% by mass or less, preferably 85% by mass or less, and more preferably 80% by mass or less with respect to the total nonvolatile components of the photosensitive resin composition. is. Thereby, patterning property can be improved.

In the present embodiment, the non-volatile component of the photosensitive resin composition refers to the remainder after excluding volatile components such as water and solvent. The content of the total non-volatile components in the photosensitive resin composition refers to the content of the total non-volatile components excluding the solvent in the photosensitive resin composition when the solvent is included.

Although the weight average molecular weight (Mw) of the epoxy resin is not particularly limited, it is preferably 300 to 9,000, more preferably 500 to 8,000. By using an epoxy resin with a relatively low molecular weight, reactivity during exposure can be enhanced.

In addition, the photosensitive resin composition of this embodiment may contain other thermosetting resins than the epoxy resin. Other thermosetting resins include, for example, urea resins, resins having a triazine ring such as melamine resins; unsaturated polyester resins; maleimide resins such as bismaleimide compounds; polyurethane resins; diallyl phthalate resins; benzoxazine resins; polyimide resins; polyamideimide resins; etc. These may be used alone or in combination of two or more.

(phenoxy resin)
The photosensitive resin composition of this embodiment contains a phenoxy resin. Thereby, the flexibility of the resin film of the photosensitive resin composition can be increased.

Although the weight average molecular weight (Mw) of the phenoxy resin is not particularly limited, it is preferably 10,000 to 100,000, more preferably 20,000 to 80,000. By using such a relatively high-molecular-weight phenoxy resin, it is possible to impart good flexibility to the resin film and impart sufficient solubility in a solvent.

In addition, in this embodiment, a weight average molecular weight is measured as a polystyrene conversion value of a gel permeation chromatography (GPC) method, for example.

Moreover, the phenoxy resin may have a reactive group such as an epoxy group at both ends of the molecular chain or inside the molecular chain. The reactive group in the phenoxy resin is capable of cross-linking reaction with the epoxy group in the epoxy resin. By using such a phenoxy resin, the solvent resistance and heat resistance in the resin film can be enhanced.

Moreover, as a phenoxy resin, what is solid at 25 degreeC is used preferably. Specifically, a phenoxy resin having a non-volatile content of 90% by mass or more is preferably used. By using such a phenoxy resin, the mechanical properties of the cured product can be improved.

Examples of the phenoxy resin include bisphenol A-type phenoxy resin, bisphenol F-type phenoxy resin, copolymer phenoxy resin of bisphenol A-type and bisphenol F-type phenoxy resin, biphenyl-type phenoxy resin, bisphenol S-type phenoxy resin, and biphenyl-type phenoxy resin. Examples thereof include copolymerized phenoxy resins with bisphenol S-type phenoxy resins, and one or a mixture of two or more of these is used. Among these, bisphenol A-type phenoxy resins or copolymerized phenoxy resins of bisphenol A-type and bisphenol F-type phenoxy resins are preferably used.

The lower limit of the content of the phenoxy resin is, for example, 20 parts by mass or more, preferably 25 parts by mass or more, and more preferably 30 parts by mass or more relative to the content of the epoxy resin. Thereby, flexibility can be improved. On the other hand, the upper limit of the content of the phenoxy resin is, for example, 60 parts by mass or less, preferably 55 parts by mass or less, more preferably 50 parts by mass or less with respect to the content of the epoxy resin. As a result, the solubility of the phenoxy resin is increased, and a photosensitive resin composition having excellent coatability can be realized.

The photosensitive resin composition of this embodiment may contain a thermoplastic resin other than the phenoxy resin. Examples of thermoplastic resins include polyvinyl acetal resins, acrylic resins, polyamide resins (e.g., nylon), thermoplastic urethane resins, polyolefin resins (e.g., polyethylene, polypropylene, etc.), polycarbonates, polyester resins (e.g., polyethylene terephthalate). , polybutylene terephthalate, etc.), polyacetal, polyphenylene sulfide, polyether ether ketone, liquid crystal polymer, fluororesin (e.g., polytetrafluoroethylene, polyvinylidene fluoride, etc.), modified polyphenylene ether, polysulfone, polyether sulfone, polyarylate, polyamide imides, polyetherimides, thermoplastic polyimides, and the like. These may be used alone or in combination of two or more.

(Photoacid generator)
The photosensitive resin composition of this embodiment contains a photoacid generator. As a result, workability such as sensitivity and resolution can be improved at the time of patterning.
The photosensitive resin composition of the present embodiment is a chemically amplified photosensitive resin composition that uses an acid generated from a photoacid generator as a catalyst, and can be used as a negative photosensitive resin composition.

Examples of the photoacid generator include onium salt compounds. More specifically, diazonium salts, iodonium salts such as diaryliodonium salts, sulfonium salts such as triarylsulfonium salts, triarylpyridinium salts, benzylpyridinium thiocyanate, dialkylphenacylsulfonium salts, dialkylhydroxyphenylphosphonium salts, etc. and cationic photopolymerization initiators. Among these, triarylsulfonium salts can be used from the viewpoint of patterning properties.

As counter anions for the above onium salt compounds, borate anions, sulfonate anions, gallate anions, phosphorus anions, antimony anions and the like are used. Among these, from the viewpoint of insulation reliability, an onium gallate salt having a triarylsulfonium cation and a gallate anion is preferably included as the photoacid generator.

These onium salts may be commercially available products, and specific examples include San-Aid SI-60, SI-80, SI-100, SI-60L, SI-80L, SI-100L, SI-L145, SI- L150, SI-L160, SI-L110, SI-L147 (manufactured by Sanshin Chemical Industry Co., Ltd.), UVI-6950, UVI-6970, UVI-6974, UVI-6990, UVI-6992 (manufactured by Union Carbide company), CPI-100P, CPI-101A, CPI-200K, CPI-200S, CPI-210S, CPI-310B, CPI-310FG, CPI-410S (manufactured by San-Apro Co., Ltd.), Adeka Optomer SP- 150, SP-151, SP-170, SP-171 (manufactured by Asahi Denka Kogyo Co., Ltd.), Irgacure 261 (manufactured by BASF), CI-2481, CI-2624, CI-2639, CI-2064 (manufactured by , Nippon Soda Co., Ltd.), CD-1010, CD-1011, CD-1012 (manufactured by Sartomer), DS-100, DS-101, DAM-101, DAM-102, DAM-105, DAM- 201, DSM-301, NAI-100, NAI-101, NAI-105, NAI-106, SI-100, SI-101, SI-105, SI-106, PI-105, NDI-105, BENZOIN TOSYLATE, MBZ -101, MBZ-301, PYR-100, PYR-200, DNB-101, NB-101, NB-201, BBI-101, BBI-102, BBI-103, BBI-109 (Midori Chemical Co., Ltd.) ), PCI-061T, PCI-062T, PCI-020T, PCI-022T (manufactured by Nippon Kayaku Co., Ltd.), IBPF, IBCF (manufactured by Sanwa Chemical Co., Ltd.) and the like.

The content of the photoacid generator is, for example, 0.3% by mass to 5.0% by mass, preferably 0.5% by mass to 4.5% by mass, based on the total solid content of the photosensitive resin composition. %, more preferably 1.0 mass % to 4.0 mass %. Patterning property can be improved by setting it to more than the said lower limit. On the other hand, insulation reliability can be improved by making it below the said lower limit.
In the present specification, "-" means including upper and lower limits unless otherwise specified.

The photosensitive resin composition of the present embodiment may contain a photosensitive agent other than the photoacid generator.

The photosensitive resin composition of this embodiment contains a thermal acid generator containing an aromatic sulfonium salt represented by the following general formula (1). These may be used alone or in combination of two or more.

In the above general formula (1),
R ¹ represents a hydrogen atom, a methoxycarbonyl group, an acetyl group, or a benzoyl group;
R ² represents a hydrogen atom, a halogen atom, or an alkyl group having 1 to 4 carbon atoms,
R ³ represents either an alkyl group having 1 to 4 carbon atoms, a benzyl group substituted or unsubstituted with an alkyl group having 1 to 4 carbon atoms, or an α-naphthylmethyl group;
R ⁴ represents an alkyl group having 1 to 4 carbon atoms.
X represents either _SbF6 , _PF6 , _AsF6 , _{BF4 , CF3SO3 , ( CF3SO2} )2N, or B _{( C6F5} ) ₄ .

The thermal acid generator preferably contains, as the aromatic sulfonium salt, a sulfonium borate salt in which X in the general formula (1) is BF ₄ or B(C ₆ F ₅ ) ₄ . By using sulfonium borate salts, it is possible to enhance low temperature curability in systems containing epoxy resins and phenolic resins.

The lower limit of the content of the thermal acid generator is, for example, 0.1% by mass or more, preferably 0.3% by mass or more, more preferably 0.5% by mass or more, relative to 100% by mass of the epoxy resin. be. Thereby, low-temperature curability and sensitivity can be enhanced. On the other hand, the upper limit of the content of the thermal acid generator is, for example, 3% by mass or less, preferably 3.5% by mass or less, more preferably 2% by mass or less with respect to 100% by mass of the epoxy resin. A decrease in the glass transition temperature and a decrease in the 5% weight loss temperature can be suppressed. Although the detailed mechanism is not clear, it is believed that the influence of sublimation of the thermal acid generator can be suppressed by setting the amount of the thermal acid generator used within an appropriate range.

(Surfactant)
The photosensitive resin composition of this embodiment can contain a surfactant. By including a surfactant, the wettability during coating can be improved, and a uniform resin film and cured film can be obtained. Examples of surfactants include fluorine-based surfactants, silicone-based surfactants, alkyl-based surfactants, and acrylic surfactants.

The surfactant preferably contains a surfactant containing at least one of a fluorine atom and a silicon atom. This contributes to obtaining a uniform resin film (improvement of coatability), improvement of developability, and improvement of adhesive strength. Such a surfactant is preferably, for example, a nonionic surfactant containing at least one of a fluorine atom and a silicon atom. Examples of commercial products that can be used as surfactants include F-251, F-253, F-281, F-430, F-477, F-551 of the "Megafac" series manufactured by DIC Corporation, F-552, F-553, F-554, F-555, F-556, F-557, F-558, F-559, F-560, F-561, F-562, F-563, F- 565, F-568, F-569, F-570, F-572, F-574, F-575, F-576, R-40, R-40-LM, R-41, R-94, etc. Fluorine-containing oligomer structure surfactants, fluorine-containing nonionic surfactants such as Phthagent 250 and Phthagent 251 manufactured by Neos Co., Ltd., SILFOAM (registered trademark) series manufactured by Wacker Chemie (for example, SD 100 TS , SD 670, SD 850, SD 860, SD 882).

The content of the surfactant is, for example, 0.001 to 1% by mass, preferably 0.005 to 0.5% by mass, based on the total amount of nonvolatile components in the photosensitive resin composition. .

(adherence aid)
The photosensitive resin composition of the present embodiment can contain an adhesion aid. Thereby, the adhesion with the inorganic material can be further improved.

The adhesion aid is not particularly limited, but silane coupling agents such as aminosilane, epoxysilane, acrylsilane, mercaptosilane, vinylsilane, ureidosilane, or sulfidesilane can be used. Silane coupling agents may be used alone or in combination of two or more. Among these, it is more preferable to use epoxysilane (that is, a compound containing both an epoxy site and a group that generates a silanol group by hydrolysis in one molecule).

Examples of amino group-containing coupling agents include bis(2-hydroxyethyl)-3-aminopropyltriethoxysilane, γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropylmethyldiethoxysilane. , γ-aminopropylmethyldimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, N-β (aminoethyl) γ-aminopropyl methyldimethoxysilane, N-β(aminoethyl)γ-aminopropylmethyldiethoxysilane, N-phenyl-γ-amino-propyltrimethoxysilane and the like.
Examples of epoxy group-containing coupling agents include γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, γ-glycidylpropyl. trimethoxysilane and the like.
Examples of acrylic group-containing coupling agents or methacrylic group-containing coupling agents include γ-(methacryloxypropyl)trimethoxysilane, γ-(methacryloxypropyl)methyldimethoxysilane, γ-(methacryloxypropyl)methyldiethoxysilane. etc.
Mercapto group-containing coupling agents include, for example, 3-mercaptopropyltrimethoxysilane.
Vinyl group-containing coupling agents include, for example, vinyltris(β-methoxyethoxy)silane, vinyltriethoxysilane, vinyltrimethoxysilane and the like.
Ureido group-containing coupling agents include, for example, 3-ureidopropyltriethoxysilane.
Sulfide group-containing coupling agents include, for example, bis(3-(triethoxysilyl)propyl)disulfide and bis(3-(triethoxysilyl)propyl)tetrasulfide.
Acid anhydride-containing coupling agents include, for example, 3-trimethoxysilylpropylsuccinic anhydride, 3-triethoxysilylpropylsuccinic anhydride, and 3-dimethylmethoxysilylpropylsuccinic anhydride.

Although silane coupling agents are listed here, titanium coupling agents, zirconium coupling agents, and the like may also be used.

The content of the adhesion aid is, for example, preferably 0.3 to 5% by mass, preferably 0.4 to 4%, based on the total amount of nonvolatile components in the photosensitive resin composition. is more preferable, and it can be 0.5 to 3% by mass.

(Additive)
In addition to the above components, other additives may be added to the photosensitive resin composition of the present embodiment, if necessary. Other additives include, for example, antioxidants, fillers such as silica, sensitizers, and film-forming agents.

(solvent)
The photosensitive resin composition of this embodiment can contain a solvent. Organic solvents can be included as solvents. Any organic solvent can be used without particular limitation as long as it can dissolve each component of the photosensitive resin composition and does not chemically react with each component.

Examples of organic solvents include acetone, methyl ethyl ketone, toluene, propylene glycol methyl ethyl ether, propylene glycol dimethyl ether, propylene glycol 1-monomethyl ether 2-acetate, diethylene glycol ethyl methyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, benzyl alcohol, propylene carbonate, ethylene glycol diacetate, propylene glycol diacetate, propylene glycol monomethyl ether acetate, dipropylene glycol methyl-n-propyl ether, butyl acetate, γ-butyrolactone and the like. These may be used singly or in combination.

The solvent is preferably used so that the total concentration of non-volatile components in the photosensitive resin composition is, for example, 30 to 75% by mass. By setting it as this range, each component can fully be melt|dissolved and favorable coating property can be ensured. Moreover, the viscosity of the photosensitive resin composition can be appropriately controlled by adjusting the content of the non-volatile component.

The viscosity of the varnish-like photosensitive resin composition at 25° C. is, for example, 10 cP to 6000 cP, preferably 20 cP to 5000 cP, more preferably 30 cP to 4000 cP. By setting the viscosity within the above numerical range, the thickness of the coating film can be appropriately controlled. For example, a thickness of 1 μm to 100 μm, preferably 3 μm to 80 μm, more preferably 5 μm to 50 μm can be achieved.

The photosensitive resin composition of the present embodiment has low-temperature curing characteristics such that the curing rate at 170° C. measured by the following procedure is, for example, 97% or more, preferably 98% or more, and more preferably 99% or more. can be done. As a result, even when the heat treatment temperature in the manufacturing process is low, it is possible to exhibit sufficient curability as compared with the case of curing at high temperature, so that the decrease in reflow resistance during low temperature heat treatment can be suppressed.

(procedure)
(1) The negative photosensitive resin composition was applied onto a silicon wafer having a diameter of 8 inches by spin coating so that the film thickness after drying was 8 μm, and dried in the atmosphere at 100° C. for 3 minutes. A photosensitive resin film is formed.
(2) The entire surface of the photosensitive resin film obtained in (1) above is exposed at 600 mJ/cm ² using an i-line stepper. Subsequently, using a hot plate, the film is heated in the air at 70° C. for 5 minutes after exposure.
(3) A cured film A is obtained by heat-treating the photosensitive resin film obtained in (2) above at 170° C. for 180 minutes in a nitrogen atmosphere. A cured film B is obtained by heat-treating the photosensitive resin film obtained in (2) above at 230° C. for 180 minutes in a nitrogen atmosphere.
(4) In the IR spectrum of the photosensitive resin film obtained in (1) above, the peak height near 910 cm ⁻¹ derived from the epoxy group is P 2 _O , and the cured film A obtained in (3) above. In the IR spectrum, the peak height near 910 cm ⁻¹ derived from the epoxy group is P _A , and in the IR spectrum of the cured film B, the peak height near 910 cm ⁻¹ derived from the epoxy group is P _B , Curing rate (%) at 170° C. is calculated based on the formula: [1-((P _A -P _B )/(P _O -P _B ))]×100.

The photosensitive resin composition of the present embodiment is a cured film (test sample) obtained by heat treatment at 170 ° C. for 180 minutes in a nitrogen atmosphere. ) is, for example, 200 ppm/°C or less, preferably 190 ppm/°C or less, more preferably 180 ppm/°C or less. As a result, the film properties during low-temperature curing can be enhanced, so that the heat resistance reliability can be improved. The lower limit of the average coefficient of linear expansion (α2) is not particularly limited, but may be 80 ppm/°C or higher, or 90 ppm/°C or higher.

Next, the semiconductor device and electronic equipment of this embodiment will be described.

FIG. 1 is a longitudinal sectional view showing an example of the semiconductor device of this embodiment. Moreover, FIG. 2 is a partially enlarged view of a region surrounded by a dashed line in FIG. In the following description, the upper side in FIG. 1 is called "upper", and the lower side is called "lower".

A semiconductor device 1 shown in FIG. 1 has a so-called package-on-package structure including a through electrode substrate 2 and a semiconductor package 3 mounted thereon.

The through electrode substrate 2 includes an insulating layer 21 , a plurality of through wirings 221 penetrating from the upper surface to the lower surface of the insulating layer 21 , a semiconductor chip 23 embedded inside the insulating layer 21 , and provided on the lower surface of the insulating layer 21 . an upper wiring layer 25 provided on the upper surface of the insulating layer 21; and solder bumps 26 provided on the lower surface of the lower wiring layer 24. As shown in FIG.

The semiconductor package 3 includes a package substrate 31, a semiconductor chip 32 mounted on the package substrate 31, bonding wires 33 electrically connecting the semiconductor chip 32 and the package substrate 31, and the semiconductor chip 32 and the bonding wires 33. It has an embedded sealing layer 34 and solder bumps 35 provided on the lower surface of the package substrate 31 .

A semiconductor package 3 is stacked on the through electrode substrate 2 . Thereby, the solder bumps 35 of the semiconductor package 3 and the upper wiring layers 25 of the through electrode substrate 2 are electrically connected.

In such a semiconductor device 1, since it is not necessary to use a thick substrate such as an organic substrate including a core layer in the through electrode substrate 2, the height can be easily reduced. Therefore, it is possible to contribute to miniaturization of electronic equipment incorporating the semiconductor device 1 .

Moreover, since the through electrode substrate 2 and the semiconductor package 3 having different semiconductor chips are stacked, the mounting density per unit area can be increased. Therefore, it is possible to achieve both miniaturization and high performance.

The through electrode substrate 2 and the semiconductor package 3 will be further detailed below.
The lower wiring layer 24 and the upper wiring layer 25 provided in the through electrode substrate 2 shown in FIG. 2 each include an insulating layer, a wiring layer, a through wiring, and the like. As a result, the lower wiring layer 24 and the upper wiring layer 25 include wiring inside and on the surface, and are electrically connected to each other through the through wiring 221 penetrating the insulating layer 21 .

Wiring layers included in the lower wiring layer 24 are connected to the semiconductor chip 23 and the solder bumps 26 . Therefore, the lower wiring layer 24 functions as a rewiring layer for the semiconductor chip 23 and the solder bumps 26 function as external terminals of the semiconductor chip 23 .

The through wiring 221 shown in FIG. 2 is provided so as to penetrate the insulating layer 21 as described above. As a result, the lower wiring layer 24 and the upper wiring layer 25 are electrically connected, and the through electrode substrate 2 and the semiconductor package 3 can be stacked. can.

A wiring layer 253 included in the upper wiring layer 25 shown in FIG. 2 is connected to the through wiring 221 and the solder bumps 35 . Therefore, the upper wiring layer 25 is electrically connected to the semiconductor chip 23, functions as a rewiring layer for the semiconductor chip 23, and functions as an interposer interposed between the semiconductor chip 23 and the package substrate 31. also works. A cured film of the photosensitive resin composition of the present embodiment can be used to form the insulating layer of the rewiring layer.

According to this embodiment, the semiconductor chip 23 and the rewiring layer (upper wiring layer 25) provided on the surface of the semiconductor chip 23 are provided, and the insulating layer in the rewiring layer It is possible to realize a semiconductor device composed of a cured product of the photosensitive resin composition having the shape.

The effect of reinforcing the insulating layer 21 is obtained because the through wiring 221 penetrates the insulating layer 21 . Therefore, even when the mechanical strength of the lower wiring layer 24 and the upper wiring layer 25 is low, the mechanical strength of the entire through electrode substrate 2 can be prevented from being lowered. As a result, the thickness of the lower wiring layer 24 and the upper wiring layer 25 can be further reduced, and the height of the semiconductor device 1 can be further reduced.

The semiconductor device 1 shown in FIG. 1 also includes a through wire 222 provided so as to penetrate the insulating layer 21 located on the upper surface of the semiconductor chip 23 in addition to the through wire 221 . Thereby, electrical connection between the upper surface of the semiconductor chip 23 and the upper wiring layer 25 can be achieved.

The insulating layer 21 is provided so as to cover the semiconductor chip 23 . This enhances the effect of protecting the semiconductor chip 23 . As a result, reliability of the semiconductor device 1 can be improved. Also, the semiconductor device 1 can be easily applied to a mounting system such as the package-on-package structure according to the present embodiment.

The diameter W (see FIG. 2) of the through wire 221 is not particularly limited, but is preferably about 1 to 100 μm, more preferably about 2 to 80 μm. Thereby, the electrical conductivity of the through wiring 221 can be ensured without impairing the mechanical properties of the insulating layer 21 .

The semiconductor package 3 shown in FIG. 1 may be any form of package. For example, QFP (Quad Flat Package), SOP (Small Outline Package), BGA (Ball Grid Array), CSP (Chip Size Package), QFN (Quad Flat Non-leaded Package), SON (Small Outline Package), Forms such as LF-BGA (Lead Flame BGA) are included.

The arrangement of the semiconductor chips 32 is not particularly limited, but as an example in FIG. 1, a plurality of semiconductor chips 32 are stacked. As a result, the mounting density is increased. The plurality of semiconductor chips 32 may be arranged side by side in the planar direction, or may be arranged side by side in the planar direction while being stacked in the thickness direction.

The package substrate 31 may be any substrate, but is a substrate including an insulating layer, a wiring layer, a through wiring, etc., which are not shown, for example. Among them, the solder bump 35 and the bonding wire 33 can be electrically connected via the through wiring.

The sealing layer 34 is made of, for example, a known sealing resin material. By providing such a sealing layer 34, the semiconductor chip 32 and the bonding wires 33 can be protected from external forces and the external environment.

Since the semiconductor chip 23 provided in the through electrode substrate 2 and the semiconductor chip 32 provided in the semiconductor package 3 are arranged close to each other, advantages such as high speed mutual communication and low loss can be obtained. can be done. From this point of view, for example, one of the semiconductor chip 23 and the semiconductor chip 32 is a CPU (Central Processing Unit), a GPU (Graphics Processing Unit), an AP (Application Processor) or other computing element, and the other is a DRAM (Dynamic Random Access). Memory), flash memory, or the like, these elements can be arranged close to each other in the same device. As a result, the semiconductor device 1 that achieves both high functionality and miniaturization can be realized.

<Method for manufacturing a semiconductor device>
Next, a method for manufacturing the semiconductor device 1 shown in FIG. 1 will be described.

3A to 3D are process diagrams showing a method of manufacturing the semiconductor device 1 shown in FIG. 4 to 6 are diagrams for explaining a method of manufacturing the semiconductor device 1 shown in FIG. 1, respectively.

The method of manufacturing the semiconductor device 1 includes a chip placement step S1 of obtaining an insulating layer 21 so as to embed a semiconductor chip 23 and through wirings 221 and 222 provided on a substrate 202, and an upper layer on the insulating layer 21 and on the semiconductor chip 23. An upper wiring layer forming step S2 for forming the wiring layer 25, a substrate peeling step S3 for peeling the substrate 202, a lower wiring layer forming step S4 for forming the lower wiring layer 24, a solder bump 26 is formed, and a through electrode substrate is formed. 2 and a stacking step S6 of stacking the semiconductor package 3 on the through electrode substrate 2 .

In the upper wiring layer forming step S2, the photosensitive resin varnish 5 (a varnish-like photosensitive resin composition) is placed on the insulating layer 21 and the semiconductor chip 23 to form a photosensitive resin layer 2510. A film placement step S20, a first exposure step S21 for exposing the photosensitive resin layer 2510, a first development step S22 for developing the photosensitive resin layer 2510, and a curing treatment for the photosensitive resin layer 2510. A first curing step S23, a wiring layer forming step S24 for forming a wiring layer 253, and a second resin for obtaining a photosensitive resin layer 2520 by disposing a photosensitive resin varnish 5 on the photosensitive resin layer 2510 and the wiring layer 253. A film placement step S25, a second exposure step S26 of exposing the photosensitive resin layer 2520, a second developing step S27 of developing the photosensitive resin layer 2520, and a curing treatment of the photosensitive resin layer 2520. A second curing step S28 and a through-wiring forming step S29 of forming the through-wiring 254 in the opening 424 (through-hole) are included.

Each step will be described below in sequence. In addition, the following manufacturing method is an example, and is not limited to this.

[1] Chip placement step S1
First, as shown in FIG. 4A, a chip including a substrate 202, a semiconductor chip 23 and through wirings 221 and 222 provided on the substrate 202, and an insulating layer 21 provided so as to bury them An embedded structure 27 is prepared.

The constituent material of the substrate 202 is not particularly limited, but examples thereof include metal materials, glass materials, ceramic materials, semiconductor materials, organic materials, and the like. Also, the substrate 202 may be a semiconductor wafer such as a silicon wafer, a glass wafer, or the like.

The semiconductor chip 23 is adhered onto the substrate 202 . In this manufacturing method, as an example, a plurality of semiconductor chips 23 are arranged side by side on the same substrate 202 while being separated from each other. The plurality of semiconductor chips 23 may be of the same type, or may be of different types. Alternatively, the substrate 202 and the semiconductor chip 23 may be fixed via an adhesive layer (not shown) such as a die attach film.

An interposer (not shown) may be provided between the substrate 202 and the semiconductor chip 23 as required. The interposer functions as a rewiring layer of the semiconductor chip 23, for example. Therefore, the interposer may have pads (not shown) for electrical connection with electrodes of the semiconductor chip 23, which will be described later. As a result, the pad spacing and arrangement pattern of the semiconductor chip 23 can be changed, and the degree of freedom in designing the semiconductor device 1 can be further enhanced.

For such interposers, for example, inorganic substrates such as silicon substrates, ceramic substrates and glass substrates, organic substrates such as resin substrates, and the like are used.

The insulating layer 21 may be, for example, a resin film (organic insulating layer) containing a thermosetting resin or a thermoplastic resin such as those listed as components of the photosensitive resin composition, and may be an ordinary sealing layer used in the technical field of semiconductors. It may be a stopping material.

Examples of materials constituting the through-wirings 221 and 222 include copper or copper alloys, aluminum or aluminum alloys, gold or gold alloys, silver or silver alloys, nickel or nickel alloys, and the like.

A chip-embedded structure 27 manufactured by a method different from the above may be prepared.

[2] Upper wiring layer forming step S2
Next, an upper wiring layer 25 is formed on the insulating layer 21 and the semiconductor chip 23 .

[2-1] First resin film placement step S20
First, as shown in FIG. 4B, the photosensitive resin varnish 5 is applied (arranged) on the insulating layer 21 and the semiconductor chip 23 . As a result, a liquid film of photosensitive resin varnish 5 is obtained as shown in FIG. 4(c). The photosensitive resin varnish 5 is the photosensitive resin composition of the present embodiment and is a varnish having photosensitivity.

Application of the photosensitive resin varnish 5 is performed using, for example, a spin coater, a bar coater, a spray device, an inkjet device, or the like.

The viscosity of the photosensitive resin varnish 5 is not particularly limited, but is 10 cP to 6000 cP, preferably 20 cP to 5000 cP, more preferably 30 cP to 4000 cP. When the viscosity of the photosensitive resin varnish 5 is within the above range, a thinner photosensitive resin layer 2510 (see FIG. 4D) can be formed. As a result, the upper wiring layer 25 can be made thinner, which facilitates the thinning of the semiconductor device 1 .

The viscosity of the photosensitive resin varnish 5 is, for example, a value measured using a cone-plate viscometer (TV-25, manufactured by Toki Sangyo Co., Ltd.) at a rotation speed of 100 rpm.

Next, the liquid film of the photosensitive resin varnish 5 is dried. As a result, a photosensitive resin layer 2510 shown in FIG. 4(d) is obtained.

Drying conditions for the photosensitive resin varnish 5 are not particularly limited, but include, for example, heating at a temperature of 80 to 150° C. for 1 to 60 minutes.

In this step, instead of the process of applying the photosensitive resin varnish 5, a process of disposing a photosensitive resin film formed by forming the photosensitive resin varnish 5 into a film may be employed. The photosensitive resin film is the photosensitive resin composition of the present embodiment and is a resin film having photosensitivity.

The photosensitive resin film is produced by applying, for example, a photosensitive resin varnish 5 onto a substrate such as a carrier film using various coating devices, and then drying the resulting coating film.

After forming the photosensitive resin layer 2510 in this way, the photosensitive resin layer 2510 is subjected to a pre-exposure heat treatment, if necessary. By performing the pre-exposure heat treatment, the molecules contained in the photosensitive resin layer 2510 are stabilized, and the reaction in the first exposure step S21 described later can be stabilized. On the other hand, by heating under the heating conditions described later, adverse effects on the photoacid generator due to heating can be minimized.

The temperature of the pre-exposure heat treatment is preferably 70 to 130.degree. C., more preferably 75 to 120.degree. C., still more preferably 80 to 110.degree. If the temperature of the pre-exposure heat treatment is lower than the lower limit, there is a risk that the pre-exposure heat treatment may fail to achieve the purpose of stabilizing molecules. On the other hand, if the temperature of the pre-exposure heat treatment exceeds the upper limit, the movement of the photo-acid generator becomes too active, and the influence that acid is less likely to be generated even when light is irradiated in the first exposure step S21 described later. becomes wider, and the processing precision of patterning may deteriorate.

In addition, the time of the pre-exposure heat treatment is appropriately set according to the temperature of the pre-exposure heat treatment. 3 to 6 minutes. If the pre-exposure heat treatment time is less than the lower limit, the heating time will be insufficient, so there is a risk that the pre-exposure heat treatment will fail to achieve the purpose of stabilizing molecules. On the other hand, if the pre-exposure heat treatment time exceeds the above upper limit, the heating time is too long, and even if the pre-exposure heat treatment temperature is within the above range, the action of the photoacid generator is inhibited. There is a risk that it will be lost.

The atmosphere for the heat treatment is not particularly limited, and may be an inert gas atmosphere, a reducing gas atmosphere, or the like.

Also, the atmospheric pressure is not particularly limited, and may be under reduced pressure or under increased pressure. The normal pressure means a pressure of about 30 to 150 kPa, preferably atmospheric pressure.

[2-2] First exposure step S21
Next, the photosensitive resin layer 2510 is subjected to exposure processing.

First, as shown in FIG. 4D, a mask 412 is arranged on a predetermined region on the photosensitive resin layer 2510 . Then, light (activating radiation) is irradiated through a mask 412 . As a result, the photosensitive resin layer 2510 is exposed according to the pattern of the mask 412 .

Note that FIG. 4D illustrates a case where the photosensitive resin layer 2510 has so-called negative photosensitivity. In this example, the region of the photosensitive resin layer 2510 corresponding to the light shielding portion of the mask 412 is imparted with solubility in the developer.

On the other hand, in the region corresponding to the transparent portion of the mask 412, for example, acid is generated by the action of the photosensitive agent. The generated acid acts as a catalyst for the reaction of the thermosetting resin in the process described below.

Also, the exposure amount in the exposure treatment is not particularly limited, but is preferably 100 to 2000 mJ/cm ² , more preferably 200 to 1000 mJ/cm ² . Thereby, underexposure and overexposure in the photosensitive resin layer 2510 can be suppressed. As a result, it is possible to finally achieve high patterning precision.
After that, if necessary, the photosensitive resin layer 2510 is subjected to post-exposure heat treatment.

The temperature of the post-exposure heat treatment is not particularly limited, but is preferably 50 to 150°C, more preferably 50 to 130°C, still more preferably 55 to 120°C, and particularly preferably 60 to 110°C. be done. By performing post-exposure heat treatment at such a temperature, the catalytic action of the generated acid is sufficiently enhanced, and the thermosetting resin can be sufficiently reacted in a shorter time. By setting the temperature within the above range, it is possible to suppress deterioration in the processing accuracy of patterning due to promotion of acid diffusion.

By setting the temperature of the post-exposure heat treatment to the lower limit or more, the reaction rate of the thermosetting resin can be increased, and the productivity can be improved. On the other hand, by setting the temperature of the post-exposure heat treatment to be equal to or lower than the upper limit, it is possible to suppress deterioration in processing accuracy of patterning due to promotion of acid diffusion.

On the other hand, the time of the post-exposure heat treatment is appropriately set according to the temperature of the post-exposure heat treatment. 3 to 15 minutes. By performing the post-exposure heat treatment for such a time, the thermosetting resin can be sufficiently reacted, and diffusion of the acid can be suppressed, thereby suppressing deterioration of the processing accuracy of patterning.

The atmosphere of the post-exposure heat treatment is not particularly limited, and may be an inert gas atmosphere, a reducing gas atmosphere, or the like.

Moreover, the atmospheric pressure of the post-exposure heat treatment is not particularly limited, and may be under reduced pressure or under increased pressure. As a result, pre-exposure heat treatment can be performed relatively easily. The normal pressure means a pressure of about 30 to 150 kPa, preferably atmospheric pressure.

[2-3] First development step S22
Next, the photosensitive resin layer 2510 is developed. As a result, openings 423 penetrating through the photosensitive resin layer 2510 are formed in regions corresponding to the light shielding portions of the mask 412 (see FIG. 5E).
Examples of the developer include organic developer and water-soluble developer.

[2-4] First curing step S23
After the development process, the photosensitive resin layer 2510 is subjected to a curing process (post-development heat treatment). Conditions for the curing treatment are not particularly limited, but the heating temperature is about 160 to 250° C. and the heating time is about 30 to 240 minutes. As a result, the photosensitive resin layer 2510 can be cured and the organic insulating layer 251 can be obtained while suppressing the thermal effect on the semiconductor chip 23 .

[2-5] Wiring layer forming step S24
Next, a wiring layer 253 is formed on the organic insulating layer 251 (see FIG. 5F). The wiring layer 253 is formed by, for example, obtaining a metal layer using a vapor deposition method such as a sputtering method or a vacuum vapor deposition method, followed by patterning using a photolithography method and an etching method.

Prior to forming the wiring layer 253, surface modification treatment such as plasma treatment may be performed.

[2-6] Second resin film placement step S25
Next, as shown in FIG. 5G, a photosensitive resin layer 2520 is obtained in the same manner as in the first resin film placement step S20. A photosensitive resin layer 2520 is arranged to cover the wiring layer 253 .

After that, pre-exposure heat treatment is applied to the photosensitive resin layer 2520 as necessary. The processing conditions are, for example, the conditions described in the first resin film placement step S20.

[2-7] Second exposure step S26
Next, the photosensitive resin layer 2520 is exposed. The processing conditions are, for example, the conditions described in the first exposure step S21.

After that, if necessary, the photosensitive resin layer 2520 is subjected to post-exposure heat treatment. The processing conditions are, for example, the conditions described in the first exposure step S21.

[2-8] Second development step S27
Next, the photosensitive resin layer 2520 is developed. Processing conditions are, for example, the conditions described in the first development step S22. As a result, openings 424 penetrating through the photosensitive resin layers 2510 and 2520 are formed (see FIG. 5(h)).

[2-9] Second curing step S28
After the development process, the photosensitive resin layer 2520 is subjected to a curing process (post-development heat treatment). The curing conditions are, for example, the conditions described in the first curing step S23. Thereby, the photosensitive resin layer 2520 is cured to obtain the organic insulating layer 252 (see FIG. 6(i)).

Although the upper wiring layer 25 has two layers of the organic insulating layer 251 and the organic insulating layer 252 in this embodiment, it may have three or more layers. In this case, after the second curing step S28, a series of steps from the wiring layer forming step S24 to the second curing step S28 may be added repeatedly.

[2-10] Through-wiring forming step S29
Next, the through wiring 254 shown in FIG. 6I is formed in the opening 424 .

A known method is used to form the through wiring 254, and for example, the following method is used.

First, a seed layer (not shown) is formed on the organic insulating layer 252 . A seed layer is formed on the top surface of the organic insulating layer 252 as well as the inner surfaces (sides and bottom) of the opening 424 .

For example, a copper seed layer is used as the seed layer. Also, the seed layer is formed by, for example, a sputtering method.

Also, the seed layer may be composed of the same metal as the through-wiring 254 to be formed, or may be composed of a different metal.

Next, a resist layer (not shown) is formed on a region of the seed layer (not shown) other than the opening 424 . Using this resist layer as a mask, the opening 424 is filled with metal. Electroplating, for example, is used for this filling. Examples of metals to be filled include copper or copper alloys, aluminum or aluminum alloys, gold or gold alloys, silver or silver alloys, nickel or nickel alloys, and the like. In this manner, the conductive material is embedded in the opening 424 to form the through wiring 254 .

Next, the resist layer (not shown) is removed. Furthermore, the seed layer (not shown) on the organic insulating layer 252 is removed. For this, for example, a flash etching method can be used.
It should be noted that the position where the through wire 254 is formed is not limited to the position shown in the figure.

[3] Substrate peeling step S3
Next, as shown in FIG. 6(j), the substrate 202 is peeled off. As a result, the lower surface of the insulating layer 21 is exposed.

[4] Lower wiring layer forming step S4
Next, as shown in FIG. 6(k), a lower wiring layer 24 is formed on the lower surface side of the insulating layer 21. Next, as shown in FIG. The lower wiring layer 24 may be formed by any method, for example, it may be formed in the same manner as the upper wiring layer forming step S2 described above.

The lower wiring layer 24 formed in this way is electrically connected to the upper wiring layer 25 via the through wiring 221 .

[5] Solder bump formation step S5
Next, as shown in FIG. 6L, solder bumps 26 are formed on the lower wiring layer 24 . Moreover, a protective film such as a solder resist layer may be formed on the upper wiring layer 25 and the lower wiring layer 24 as necessary.
The through electrode substrate 2 is obtained as described above.

The through electrode substrate 2 shown in FIG. 6(L) can be divided into a plurality of regions. Therefore, a plurality of through electrode substrates 2 can be efficiently manufactured by singulating the through electrode substrates 2 along the dashed line shown in FIG. 6(L), for example. In addition, for example, a diamond cutter or the like can be used for singulation.

[6] Lamination step S6
Next, the semiconductor package 3 is arranged on the through electrode substrate 2 that has been divided into pieces. Thereby, the semiconductor device 1 shown in FIG. 1 is obtained.

Such a method for manufacturing the semiconductor device 1 can be applied to a wafer level process and a panel level process using a large-sized substrate. As a result, the manufacturing efficiency of the semiconductor device 1 can be increased and the cost can be reduced.

<Modified Example of Semiconductor Device>
Next, a modified example of the semiconductor device according to the embodiment will be described.

(First modification)
First, the first modified example will be described.
FIG. 7 is a partially enlarged cross-sectional view showing a first modification of the semiconductor device according to the embodiment.
A first modified example will be described below, but in the following description, differences from the embodiment shown in FIGS. 1 and 2 will be mainly described, and descriptions of similar items will be omitted. 1 and 2 are denoted by the same reference numerals in FIG.

A semiconductor device 1A shown in FIG. 7 is the same as the semiconductor device 1 shown in FIGS. 1 and 2 except for the structure of the lower wiring layer. That is, the semiconductor device 1A shown in FIG. 7 includes a semiconductor chip 23 provided with lands 231, a lower wiring layer 24A, and solder bumps 26. As shown in FIG. The structure of the lower wiring layer 24A is different from the structure of the lower wiring layer 24 shown in FIGS.

Specifically, the lower wiring layer 24A shown in FIG. 7 includes an organic insulating layer 240 provided on the lower surface of the semiconductor chip 23 and an organic insulating layer 241 provided below the organic insulating layer 240. . At least one of these organic insulating layers 240 and 241 is formed using a photosensitive resin composition for bump protection film. The bottom surface of the semiconductor chip 23 is covered with organic insulating layers 240 and 241 .

The lower wiring layer 24A shown in FIG. 7 also includes a bump adhesion layer 245 electrically connected to both the land 231 and the solder bump 26. As shown in FIG.

By using the photosensitive resin composition for the bump protection film in manufacturing the first modification, the patterning accuracy is high, and deterioration of the metal contained in the land 231 and the bump adhesion layer 245 can be suppressed. Therefore, a highly reliable semiconductor device 1A can be obtained.

(Second modification)
Next, a second modified example will be described.
FIG. 8 is a partially enlarged cross-sectional view showing a second modification of the semiconductor device according to the embodiment.
The second modification will be described below, but in the following description, differences from the embodiment shown in FIGS. 1 and 2 will be mainly described, and descriptions of the same items will be omitted. 1 and 2 are denoted by the same reference numerals in FIG.

A semiconductor device 1B shown in FIG. 8 is the same as the semiconductor device 1 shown in FIGS. 1 and 2 except for the structure of the lower wiring layer. That is, the semiconductor device 1B shown in FIG. 8 includes a semiconductor chip 23 provided with lands 231, a lower wiring layer 24B, and solder bumps 26. As shown in FIG. The structure of the lower wiring layer 24B is different from the structure of the lower wiring layer 24 shown in FIGS.

Specifically, the lower wiring layer 24B shown in FIG. and an organic insulating layer 242 provided below. At least one of these organic insulating layers 240, 241, 242 is formed using a photosensitive resin composition for bump protection film.

The lower wiring layer 24B shown in FIG. 8 includes a wiring layer 243 electrically connected to the land 231, a bump adhesion layer 245 electrically connected to both the wiring layer 243 and the solder bumps 26, It has Organic insulating layers 240 and 241 are interposed between the semiconductor chip 23 and the wiring layer 243 , and the lower surface of the wiring layer 243 is covered with the organic insulating layer 242 .

When manufacturing such a second modification, by using the photosensitive resin composition for the bump protective film, the patterning accuracy is high, and the deterioration of the metal contained in the land 231, the wiring layer 243, and the bump adhesion layer 245 is suppressed. be able to. Therefore, a highly reliable semiconductor device 1B can be obtained.

<Electronic Device>
The electronic device according to this embodiment includes the semiconductor device according to this embodiment described above.

The electronic device according to the present embodiment is not particularly limited as long as it includes such a semiconductor device. communication equipment, robots, industrial equipment such as machine tools, vehicle control computers, in-vehicle equipment such as car navigation systems, and the like.

Although the present invention has been described above based on the illustrated embodiments, the present invention is not limited to these.

For example, the method of manufacturing a semiconductor device according to the present invention may be obtained by adding an arbitrary step to the above-described embodiment.

Further, the photosensitive resin composition, semiconductor device and electronic device of the present invention may be obtained by adding arbitrary elements to the above embodiments.

In addition to semiconductor devices, the photosensitive resin composition is also applied to, for example, MEMS (Micro Electro Mechanical Systems), bump protective films of various sensors, liquid crystal display devices, and bump protective films of display devices such as organic EL devices. It is possible.

（上記一般式（１）中、
Ｒ ^１ は水素原子、メトキシカルボニル基、アセチル基、ベンゾイル基のいずれか示し、
Ｒ ^２ は水素原子、ハロゲン原子、炭素数１～４のアルキル基のいずれかを示し、
Ｒ ^３ は炭素数１～４のアルキル基、炭素数１～４のアルキル基で置換もしくは無置換のベンジル基またはα－ナフチルメチル基のいずれかを示し、
Ｒ ^４ は炭素数１～４のアルキル基を示す。
ＸはＳｂＦ _６ 、ＰＦ _６ 、ＡｓＦ _６ 、ＢＦ _４ 、ＣＦ _３ ＳＯ _３ 、（ＣＦ _３ ＳＯ _２ ） _２ Ｎ、Ｂ（Ｃ _６ Ｆ _５ ） _４ のいずれかを示す。）
２． １．に記載のネガ型感光性樹脂組成物であって、
前記熱酸発生剤が、上記一般式（１）におけるＸがＢＦ _４ またはＢ（Ｃ _６ Ｆ _５ ） _４ を示すスルホニウム塩ボレート塩を含む、ネガ型感光性樹脂組成物。
３． １．または２．に記載のネガ型感光性樹脂組成物であって、
前記熱酸発生剤の含有量は、前記エポキシ樹脂１００質量％に対して、０．１質量％以上３質量％以下である、ネガ型感光性樹脂組成物。
４． １．～３．のいずれか一つに記載のネガ型感光性樹脂組成物であって、
前記フェノキシ樹脂の重量平均分子量が、１００００以上１０００００以下である、ネガ型感光性樹脂組成物。
５． １．～４．のいずれか一つに記載のネガ型感光性樹脂組成物であって、
下記の手順で測定された１７０℃における硬化率が９７％以上である、ネガ型感光性樹脂組成物。
（手順）
（１）当該ネガ型感光性樹脂組成物を、直径８インチのシリコンウエハー上に、スピンコートによって乾燥後膜厚が８μｍになるように塗布し、大気中で、１００℃で３分乾燥して感光性樹脂膜を形成する。
（２）上記（１）で得られた感光性樹脂膜に対して、ｉ線ステッパーを用いて、６００ｍＪ／ｃｍ ^２ で全面露光する。続いて、ホットプレートを用いて、大気中で、７０℃、５分、露光後加熱する。
（３）上記（２）で得られた感光性樹脂膜に対して、窒素雰囲気下、１７０℃で１８０分加熱処理して硬化膜Ａを得る。また、上記（２）で得られた感光性樹脂膜に対して、窒素雰囲気下、２３０℃で１８０分加熱処理して硬化膜Ｂを得る。
（４）上記（１）で得られた感光性樹脂膜のＩＲスペクトルを、フーリエ変換赤外分光分析測定（ＦＴ－ＩＲ）を用いて測定し、エポキシ基に由来する９１０ｃｍ ^－１ 付近のピーク高さをＰ _Ｏ とし、上記（３）で得られた硬化膜ＡのＩＲスペクトルにおいて、エポキシ基に由来する９１０ｃｍ ^－１ 付近のピーク高さをＰ _Ａ とし、硬化膜ＢのＩＲスペクトルにおいて、エポキシ基に由来する９１０ｃｍ ^－１ 付近のピーク高さをＰ _Ｂ としたとき、１７０℃における硬化率（％）を、式：［１－（（Ｐ _Ａ －Ｐ _Ｂ ）／（Ｐ _Ｏ －Ｐ _Ｂ ））］×１００に基づいて算出する。
６． １．～５．のいずれか一つに記載のネガ型感光性樹脂組成物であって、
当該ネガ型感光性樹脂組成物を、窒素雰囲気下、１７０℃で１８０分加熱処理して得られた硬化膜の、１５０℃から２５０℃の範囲において算出した平面方向の平均線膨張係数（α２）が、２００ｐｐｍ／℃以下である、ネガ型感光性樹脂組成物。
７． １．～６．のいずれか一つに記載のネガ型感光性樹脂組成物であって、
界面活性剤を含む、ネガ型感光性樹脂組成物。
８． １．～７．のいずれか一つに記載のネガ型感光性樹脂組成物であって、
密着助剤を含む、ネガ型感光性樹脂組成物。
９． １．～８．のいずれか一つに記載のネガ型感光性樹脂組成物であって、
溶剤を含む、ネガ型感光性樹脂組成物。
１０． １．～９．のいずれか一つに記載のネガ型感光性樹脂組成物であって、
当該ネガ型感光性樹脂組成物の２５℃における粘度が、１０ｃＰ以上６０００ｃＰ以下である、ネガ型感光性樹脂組成物。
１１． １．～１０．のいずれか一つに記載のネガ型感光性樹脂組成物であって、
当該ネガ型感光性樹脂組成物の硬化膜を、再配線層の絶縁層を構成するために用いる、ネガ型感光性樹脂組成物。
１２． 半導体チップと、
半導体チップの表面上に設けられた再配線層と、を備えており、
前記再配線層中の絶縁層が、１．～１１．のいずれか一つに記載のネガ型感光性樹脂組成物の硬化物で構成される、半導体装置。 Moreover, the form of the package of the semiconductor device is not limited to the illustrated form, and may be of any form.
Examples of reference forms are added below.
1. A negative photosensitive resin composition for film formation,
epoxy resin;
a phenoxy resin;
a photoacid generator;
a thermal acid generator containing an aromatic sulfonium salt represented by the following general formula (1);
A negative photosensitive resin composition comprising:

(In the above general formula (1),
R ¹ represents a hydrogen atom, a methoxycarbonyl group, an acetyl group, or a benzoyl group;
R ² represents a hydrogen atom, a halogen atom, or an alkyl group having 1 to 4 carbon atoms,
R ³ represents either an alkyl group having 1 to 4 carbon atoms, a benzyl group substituted or unsubstituted with an alkyl group having 1 to 4 carbon atoms, or an α-naphthylmethyl group;
R ⁴ represents an alkyl group having 1 to 4 carbon atoms.
X _{represents either SbF6} , PF6 , _AsF6 , BF4 , _{CF3SO3 ,} ( _CF3SO2 ) 2N _, or _{B (} C6F5 ) _{4 .} )
2. 1. A negative photosensitive resin composition according to
The negative photosensitive resin composition, wherein the thermal acid generator contains a sulfonium borate salt in which X in the general formula (1) is BF ₄ or B(C ₆ F ₅ ) ₄ .
3. 1. or 2. A negative photosensitive resin composition according to
The negative photosensitive resin composition, wherein the content of the thermal acid generator is 0.1% by mass or more and 3% by mass or less with respect to 100% by mass of the epoxy resin.
4. 1. ~3. A negative photosensitive resin composition according to any one of
The negative photosensitive resin composition, wherein the phenoxy resin has a weight average molecular weight of 10,000 or more and 100,000 or less.
5. 1. ~ 4. A negative photosensitive resin composition according to any one of
A negative photosensitive resin composition having a curing rate of 97% or more at 170° C. as measured by the following procedure.
(procedure)
(1) The negative photosensitive resin composition was applied onto a silicon wafer having a diameter of 8 inches by spin coating so that the film thickness after drying was 8 μm, and dried in the atmosphere at 100° C. for 3 minutes. A photosensitive resin film is formed.
(2) The entire surface of the photosensitive resin film obtained in (1) above is exposed at 600 mJ/cm ² using an i-line stepper . Subsequently, using a hot plate, the film is heated in the air at 70° C. for 5 minutes after exposure.
(3) A cured film A is obtained by heat-treating the photosensitive resin film obtained in (2) above at 170° C. for 180 minutes in a nitrogen atmosphere. A cured film B is obtained by heat-treating the photosensitive resin film obtained in (2) above at 230° C. for 180 minutes in a nitrogen atmosphere.
(4) The IR spectrum of the photosensitive resin film obtained in (1) above is measured using Fourier transform infrared spectroscopy (FT-IR), and the peak height near 910 cm derived from the epoxy ^group . In the IR spectrum of the cured film A obtained in (3) above, the peak height near 910 cm ⁻¹ derived from the epoxy group is P _A , and in the IR spectrum of the cured film B, the epoxy _group When P _B is the peak height near 910 cm ⁻¹ derived from , the curing rate (%) at 170 ° C. is expressed by the formula: [1-((P _A -P _B )/(P _O -P _B )) ]×100.
6. 1. ~ 5. A negative photosensitive resin composition according to any one of
The average linear expansion coefficient (α2) in the plane direction of the cured film obtained by heat-treating the negative photosensitive resin composition at 170° C. for 180 minutes in a nitrogen atmosphere, calculated in the range from 150° C. to 250° C. is 200 ppm/°C or less, a negative photosensitive resin composition.
7. 1. ~6. A negative photosensitive resin composition according to any one of
A negative photosensitive resin composition containing a surfactant.
8. 1. ~7. A negative photosensitive resin composition according to any one of
A negative photosensitive resin composition containing an adhesion aid.
9. 1. ~8. A negative photosensitive resin composition according to any one of
A negative photosensitive resin composition containing a solvent.
10. 1. ~ 9. A negative photosensitive resin composition according to any one of
A negative photosensitive resin composition having a viscosity of 10 cP or more and 6000 cP or less at 25°C.
11. 1. ~ 10. A negative photosensitive resin composition according to any one of
A negative photosensitive resin composition in which a cured film of the negative photosensitive resin composition is used to form an insulating layer of a rewiring layer.
12. a semiconductor chip;
a rewiring layer provided on the surface of the semiconductor chip,
The insulating layer in the rewiring layer has the following properties:1. ~ 11. A semiconductor device comprising a cured product of the negative photosensitive resin composition according to any one of .

EXAMPLES The present invention will be described in detail below with reference to Examples, but the present invention is not limited to the description of these Examples.

(Preparation of negative photosensitive resin composition)
Raw materials for each component blended according to Table 1 were dissolved in propylene glycol monomethyl ether acetate (PGMEA) to obtain a mixed solution. Thereafter, the mixed solution was filtered through a 0.2 μm polypropylene filter to obtain a varnish-like photosensitive resin composition having a viscosity of about 100 cP at 25°C. The viscosity of the photosensitive resin composition was measured using a cone-plate viscometer (TV-25, manufactured by Toki Sangyo Co., Ltd.) at a rotational speed of 100 rpm.

Details of raw materials for each component in Table 1 are as follows.
(Epoxy resin)
Epoxy resin 1: Epoxy resin 1: Polyfunctional epoxy resin represented by the following structure (EPPN201 manufactured by Nippon Kayaku Co., Ltd., phenolic novolak type epoxy resin, solid at 25 ° C., n = about 5)

(phenoxy resin)
- Phenoxy resin 1: Bisphenol A type phenoxy resin (jER1256 manufactured by Mitsubishi Chemical Corporation, Mw: about 50,000))

(Photoacid generator)
- Photoacid generator 1: triarylsulfonium borate salt (manufactured by San-Apro, CPI-310B)

(Thermal acid generator)
Thermal acid generator 1: borate-type sulfonium salt represented by the following structure (manufactured by Sanshin Chemical Co., Ltd., San-Aid SI-B3)

(Surfactant)
・Surfactant 1: fluorine-containing group-lipophilic group-containing oligomer (R-41, manufactured by DIC)

（溶剤）
・溶剤１：プロピルグリコールモノメチルエーテルアセテート（ＰＧＭＥＡ） (Silane coupling agent)
- Silane coupling agent 1: 3-glycidoxypropyltrimethoxysilane represented by the following chemical formula (KBM-403, manufactured by Shin-Etsu Chemical Co., Ltd.)

(solvent)
- Solvent 1: propyl glycol monomethyl ether acetate (PGMEA)

The obtained photosensitive resin composition was evaluated based on the following evaluation items.

<170° C. Curing Rate>
(1) The resulting negative photosensitive resin composition was applied onto a silicon wafer having a diameter of 8 inches by spin coating so that the film thickness after drying was 8 μm, and dried in the atmosphere at 100° C. for 3 minutes. Then, a photosensitive resin film was formed.
(2) The entire surface of the photosensitive resin film obtained in (1) above is exposed at 600 mJ/cm ² using an i-line stepper. Subsequently, using a hot plate, the film was heated in the atmosphere at 70° C. for 5 minutes after exposure.
(3) A cured film A was obtained by heat-treating the photosensitive resin film obtained in (2) above at 170° C. for 180 minutes in a nitrogen atmosphere. Further, the photosensitive resin film obtained in (2) above was heat-treated at 230° C. for 180 minutes in a nitrogen atmosphere to obtain a cured film B.
(4) The IR spectrum of the photosensitive resin film obtained in (1) above is measured using Fourier transform infrared spectroscopy (FT ^- IR), and the peak height near 910 cm derived from the epoxy group. In the IR spectrum of the cured film A obtained in (3) above, the peak height near 910 cm ⁻¹ derived from the epoxy group is P _A , and in the IR spectrum of the cured film _B , the epoxy group When P _B is the peak height near 910 cm ⁻¹ derived from , the curing rate (%) at 170 ° C. is expressed by the formula: [1-((P _A -P _B )/(P _O -P _B )) ]×100. Table 1 shows the results.

<CTE>
The resulting negative photosensitive resin composition was heat-treated at 170° C. for 180 minutes in a nitrogen atmosphere to obtain a sample cured film. The resulting sample cured film was subjected to a temperature increase rate of 5° C./min, a load of 30 N, a tensile mode, using a TMA (Thermal Mechanical Analyzer) tester (manufactured by Seiko Instruments Inc., product number: EXSTAR6000 TMA/SS6100). Measurement range temperature: Two cycles of thermomechanical analysis (TMA) were measured under the conditions of 150°C to 250°C. From the obtained results, the average value of the linear expansion coefficient (α2) in the plane direction (XY direction) in the range of 150° C. to 250° C. was calculated. For the coefficient of linear expansion (ppm/°C), the value at the second cycle was adopted. Table 1 shows the results.

<Photosensitivity (Eop)>
(1) The resulting negative photosensitive resin composition was applied onto a silicon wafer having a diameter of 8 inches by spin coating so that the film thickness after drying was 8 μm, and dried in the atmosphere at 100° C. for 3 minutes. Then, a photosensitive resin film was formed.
(2) The photosensitive resin film obtained in (1) above is subjected to stepwise exposure at 20 mJ/cm ² to 1240 mJ/cm ² using an i-line stepper. Subsequently, using a hot plate, the film was heated in the atmosphere at 70° C. for 5 minutes after exposure. Subsequently, using a spray developing machine, the film was developed with PGMEA in the air for 20 seconds for patterning.
(3) The photosensitive resin film obtained in (2) above was heat-treated at 170° C. for 180 minutes in a nitrogen atmosphere to obtain a cured film.
(4) Among the patterning of the photosensitive resin film obtained in the above (1), the cross section of the square via corresponding to the 7 μm mask portion was observed with an SEM, and the exposure amount (mJ/cm) which is a CD (Critical Dimension) of 7 μm ² ) was taken as Eop.

<Reflow resistance>
(1) The resulting negative photosensitive resin composition was heat-treated at 170° C. for 180 minutes in a nitrogen atmosphere to obtain a sample cured film A. Further, a sample cured film B was obtained by heat treatment at 230° C. for 180 minutes in a nitrogen atmosphere. Each of the obtained sample cured films A and B was subjected to heat treatment 10 times at 260° C. for 5 minutes in a nitrogen atmosphere.
(2) For each of the sample cured films A and B obtained in (1) above, a TMA (Thermal Mechanical Analyzer) testing device (manufactured by Seiko Instruments Inc., product number: EXSTAR6000 TMA/SS6100) was used to perform an elevation test. Two cycles of thermomechanical analysis (TMA) were measured under the conditions of a temperature rate of 5°C/min, a load of 30N, a tensile mode, and a measurement range temperature of 150°C to 250°C. From the obtained results, the average value of the linear expansion coefficient (α2) in the plane direction (XY direction) in the range of 150 ° C. to 250 ° C. is calculated, and the linear expansion coefficient (α2) of the sample cured film B after reflow is When the ratio of the linear expansion coefficient (α2) of the sample cured film A after reflow was less than 10%, it was evaluated as ◯, and when it was 10% or more and less than 50%, it was evaluated as Δ.

It was found that the negative photosensitive resin compositions of Examples 1 to 3 are superior to Comparative Example 1 in low-temperature curability, sensitivity, and reflow resistance. The photosensitive resin compositions of Examples 1 to 3 are suitable as negative photosensitive resin compositions used for insulating films of wiring layers.

1 semiconductor device 1A semiconductor device 1B semiconductor device 2 through electrode substrate 3 semiconductor package 5 photosensitive resin varnish 21 insulating layer 23 semiconductor chip 24 lower wiring layer 24A lower wiring layer 24B lower wiring layer 25 upper wiring layer 26 solder bump 27 chip embedding Structure 31 Package substrate 32 Semiconductor chip 33 Bonding wire 34 Sealing layer 35 Solder bump 202 Substrate 221 Through wiring 222 Through wiring 231 Land 240 Organic insulation layer 241 Organic insulation layer 242 Organic insulation layer 243 Wiring layer 245 Bump adhesion layer 251 Organic insulation Layer 252 Organic insulating layer 253 Wiring layer 254 Penetrating wiring 412 Mask 423 Opening 424 Opening 2510 Photosensitive resin layer 2520 Photosensitive resin layer S1 Chip placement step S2 Upper wiring layer formation step S20 First resin film placement step S21 First exposure Step S22 First developing step S23 First curing step S24 Wiring layer forming step S25 Second resin film placement step S26 Second exposure step S27 Second developing step S28 Second curing step S29 Penetration wire forming step S3 Substrate peeling step S4 Lower layer wiring Layer forming step S5 Solder bump forming step S6 Stacking step W Diameter

Claims (11)

A negative photosensitive resin composition for film formation,
epoxy resin;
a phenoxy resin;
a photoacid generator;
and a thermal acid generator containing an aromatic sulfonium salt represented by the following general formula (1),
The thermal acid generator contains a sulfonium borate salt in which X in the general formula (1) is BF ₄ or B(C ₆ F ₅ ) ₄ ,
Negative photosensitive resin composition.

(In the above general formula (1),
R ¹ represents a hydrogen atom, a methoxycarbonyl group, an acetyl group, or a benzoyl group;
R ² represents a hydrogen atom, a halogen atom, or an alkyl group having 1 to 4 carbon atoms,
R ³ represents either an alkyl group having 1 to 4 carbon atoms, a benzyl group substituted or unsubstituted with an alkyl group having 1 to 4 carbon atoms, or an α-naphthylmethyl group;
R ⁴ represents an alkyl group having 1 to 4 carbon atoms.
X represents either _SbF6 , _PF6 , _AsF6 , _{BF4 , CF3SO3 , ( CF3SO2} )2N, or B _{( C6F5} ) ₄ . ) The negative photosensitive resin composition according to claim 1 ,
The negative photosensitive resin composition, wherein the content of the thermal acid generator is 0.1% by mass or more and 3% by mass or less with respect to 100% by mass of the epoxy resin. The negative photosensitive resin composition according to claim 1 or 2 ,
The negative photosensitive resin composition, wherein the phenoxy resin has a weight average molecular weight of 10,000 or more and 100,000 or less. The negative photosensitive resin composition according to any one of claims 1 to 3 ,
A negative photosensitive resin composition having a curing rate of 97% or more at 170° C. as measured by the following procedure.
(procedure)
(1) The negative photosensitive resin composition was applied onto a silicon wafer having a diameter of 8 inches by spin coating so that the film thickness after drying was 8 μm, and dried in the atmosphere at 100° C. for 3 minutes. A photosensitive resin film is formed.
(2) The entire surface of the photosensitive resin film obtained in (1) above is exposed at 600 mJ/cm ² using an i-line stepper. Subsequently, using a hot plate, the film is heated in the air at 70° C. for 5 minutes after exposure.
(3) A cured film A is obtained by heat-treating the photosensitive resin film obtained in (2) above at 170° C. for 180 minutes in a nitrogen atmosphere. A cured film B is obtained by heat-treating the photosensitive resin film obtained in (2) above at 230° C. for 180 minutes in a nitrogen atmosphere.
(4) The IR spectrum of the photosensitive resin film obtained in (1) above is measured using Fourier transform infrared spectroscopy (FT ^- IR), and the peak height near 910 cm derived from the epoxy group. In the IR spectrum of the cured film A obtained in (3) above, the peak height near 910 cm ⁻¹ derived from the epoxy group is P _A , and in the IR spectrum of the cured film _B , the epoxy group When P _B is the peak height near 910 cm ⁻¹ derived from , the curing rate (%) at 170 ° C. is expressed by the formula: [1-((P _A -P _B )/(P _O -P _B )) ]×100. The negative photosensitive resin composition according to any one of claims 1 to 4 ,
The average linear expansion coefficient (α2) in the plane direction of the cured film obtained by heat-treating the negative photosensitive resin composition at 170° C. for 180 minutes in a nitrogen atmosphere, calculated in the range from 150° C. to 250° C. is 200 ppm/°C or less, a negative photosensitive resin composition. The negative photosensitive resin composition according to any one of claims 1 to 5 ,
A negative photosensitive resin composition containing a surfactant. The negative photosensitive resin composition according to any one of claims 1 to 6 ,
A negative photosensitive resin composition containing an adhesion aid. The negative photosensitive resin composition according to any one of claims 1 to 7 ,
A negative photosensitive resin composition containing a solvent. The negative photosensitive resin composition according to any one of claims 1 to 8 ,
A negative photosensitive resin composition having a viscosity of 10 cP or more and 6000 cP or less at 25°C. The negative photosensitive resin composition according to any one of claims 1 to 9 ,
A negative photosensitive resin composition in which a cured film of the negative photosensitive resin composition is used to form an insulating layer of a rewiring layer. a semiconductor chip;
a rewiring layer provided on the surface of the semiconductor chip,
A semiconductor device, wherein the insulating layer in the rewiring layer is composed of a cured product of the negative photosensitive resin composition according to any one of claims 1 to 10 .

Images