JP7494462B2 - Photosensitive resin composition, method for producing electronic device, and electronic device - Google Patents

Description

The present invention relates to a photosensitive resin composition, a method for manufacturing an electronic device, and an electronic device. More specifically, the present invention relates to a photosensitive resin composition, a method for manufacturing an electronic device using the photosensitive resin composition, and an electronic device having a cured film of the photosensitive resin composition.

In the electrical and electronic fields, photosensitive resin compositions containing thermosetting resins are sometimes used to form cured films such as insulating layers. For this reason, photosensitive resin compositions containing thermosetting resins have been studied. It is known that photosensitive resin compositions containing thermosetting resins can be used to form insulating films in rewiring layers and insulating films in parts other than the rewiring layers.
As an example, Patent Document 1 describes a photosensitive resin composition containing an alkaline aqueous solution soluble resin, a crosslinking agent, a photopolymerization initiator, and an epoxy resin (thermosetting resin) represented by a specific general formula. Patent Document 1 describes that the photosensitivity of this photosensitive resin composition is good. Patent Document 1 also describes that a film formed by this photosensitive resin composition is excellent in flexibility, adhesion, pencil hardness, solvent resistance, acid resistance, heat resistance, gold plating resistance, etc.

JP 2016-80871 A

As electronic devices become more sophisticated and complex, they are being required to have higher reliability than ever before, and therefore there is a demand for improving the reliability of electronic devices by improving the cured film (improving the photosensitive resin composition for forming the cured film).
Furthermore, in recent years, there has been a demand to lower the heating temperature when forming the cured film (for example, to about 170° C.) in order to reduce thermal damage to semiconductor chips.

The present invention has been made in consideration of these circumstances. One of the objects of the present invention is to provide a photosensitive resin composition that can be cured by heating at about 170°C to form a cured film, which can be used to manufacture highly reliable electronic devices.

The inventors have completed the invention provided below and solved the above problem.

According to the present invention, the following is provided:
A photosensitive resin composition containing a thermosetting resin,
The photosensitive resin composition is heated at 170°C for 2 hours to obtain a cured film, and when the dynamic viscoelasticity is measured under the following conditions, the storage modulus _E'220 at 220°C is 0.5 GPa or more and 3.0 GPa or less.
[conditions]
Frequency: 1Hz
Temperature: 30 to 300°C
Heating rate: 5°C/min Measurement mode: Tensile mode

The present invention also provides the following.
a film forming step of forming a photosensitive resin film on a substrate using the photosensitive resin composition;
an exposure step of exposing the photosensitive resin film to light;
a developing step of developing the exposed photosensitive resin film;
A method for manufacturing an electronic device, comprising:

The present invention also provides the following.
An electronic device comprising a cured film of the photosensitive resin composition.

By curing the photosensitive resin composition of the present invention by heating it to about 170°C to form a cured film, it is possible to manufacture highly reliable electronic devices.

FIG. 1 is a vertical cross-sectional view showing an example of a configuration of an electronic device. FIG. 2 is a partial enlarged view of the area enclosed by the dashed line in FIG. 2A to 2C are process diagrams illustrating a method for manufacturing the electronic device shown in FIG. 2A to 2C are diagrams for explaining a method for manufacturing the electronic device shown in FIG. 1 . 2A to 2C are diagrams for explaining a method for manufacturing the electronic device shown in FIG. 1 . 2A to 2C are diagrams for explaining a method for manufacturing the electronic device shown in FIG. 1 .

Hereinafter, an embodiment of the present invention will be described in detail with reference to the drawings.
In all drawings, similar components are given similar symbols and descriptions thereof are omitted where appropriate.
In order to avoid complexity, (i) when there are multiple identical components in the same drawing, only one of them will be given a reference symbol, and not all of them will be given a reference symbol, and (ii) particularly in Figure 2 and subsequent figures, components similar to those in Figure 1 will not be given a reference symbol again.
All drawings are for illustrative purposes only. The shapes and dimensional ratios of each component in the drawings do not necessarily correspond to the actual objects.

In this specification, the term "approximately" means that a range taking into consideration manufacturing tolerances, assembly variations, and the like, is included, unless otherwise specified explicitly.
In this specification, unless otherwise specified, the expression "X to Y" in the description of a numerical range means from X to Y. For example, "1 to 5% by mass" means "1% by mass to 5% by mass."

In the description of groups (atomic groups) in this specification, when a notation does not specify whether the group is substituted or unsubstituted, the notation includes both groups having no substituents and groups having a substituent. For example, an "alkyl group" includes not only an alkyl group having no substituents (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).
In this specification, the term "electronic device" is used to encompass elements, devices, final products, etc. to which electronic engineering technology is applied, such as semiconductor chips, semiconductor elements, printed wiring boards, electric circuit display devices, information and communication terminals, light-emitting diodes, physical batteries, and chemical batteries.

<Photosensitive resin composition>
The photosensitive resin composition of the present embodiment contains a thermosetting resin.
The photosensitive resin composition of this embodiment is heated at 170° C. for 2 hours to obtain a cured film, and when the dynamic viscoelasticity is measured under the following conditions, the storage modulus E′ ₂₂₀ at 220° C. is 0.5 GPa or more and 3.0 GPa or less.
[conditions]
Frequency: 1Hz
Temperature: 30 to 300°C
Heating rate: 5°C/min Measurement mode: Tensile mode

During the manufacturing process of electronic devices, heating is performed, for example, in a reflow process.
The present inventors have hypothesized that high temperatures in a heating step such as a reflow step may adversely affect a cured film in an electronic device, resulting in a decrease in the reliability of the electronic device. More specifically, the cured film softens at high temperatures, and therefore the adhesion strength decreases in the heating step, causing the film to peel off, resulting in a decrease in the reliability of the electronic device.

Based on this idea, the present inventors thought that if it were possible to design a photosensitive resin composition capable of forming a cured film that does not easily soften at 220°C (having a relatively large elastic modulus at 220°C), which is a heating temperature that can be used in a reflow process, the decrease in adhesion during the heating process would be suppressed, and as a result, the reliability of electronic devices would be improved. Furthermore, they thought that if such a cured film could be formed by heating at about 170°C, it would be possible to follow the recent trend in electronic device manufacturing.
Taking this idea a step further, the present inventors (i) adopted the storage modulus E' ₂₂₀ of the cured film at 220° C. as an index of the resistance of the cured film to softening at 220° C., and (ii) newly designed a photosensitive resin composition having an E' ₂₂₀ of 0.5 GPa or more. Here, the conditions for forming the cured film were adopted as "170° C. for 2 hours" in consideration of recent trends in electronic device manufacturing.
By applying this new photosensitive resin composition to the manufacture of electronic devices, the present inventors have succeeded in improving the reliability of the electronic devices.

In principle, it is considered that the larger E' ₂₂₀ is, the better. However, from the viewpoint of cost and practical composition design, the upper limit of E' ₂₂₀ is set to 3.0 GPa in this embodiment.

The photosensitive resin composition of this embodiment having _E'220 of 0.5 GPa or more and 3.0 GPa or less can be produced by appropriately selecting the materials, their blending, preparation method, etc. Preferred materials for the photosensitive resin composition of this embodiment will be described below, but for example, a photosensitive resin composition having _E'220 of 0.5 GPa or more and 3.0 GPa or less can be produced by using an epoxy resin having a glycidylbenzene skeleton (preferably an epoxy resin having a diglycidylbenzene skeleton) as the thermosetting resin.

_E'220 may be from 0.5 GPa to 3.0 GPa, preferably from 0.6 GPa to 2.5 GPa, and more preferably from 0.7 GPa to 2.0 GPa.

The explanation of the photosensitive resin composition of this embodiment will continue.

(Thermosetting resin)
As the thermosetting resin, one or more of epoxy resin, phenol resin, polyimide resin, bismaleimide resin, urea resin, melamine resin, polyurethane resin, cyanate ester resin, silicone resin, oxetane resin (oxetane compound), (meth)acrylate resin, unsaturated polyester resin, diallyl phthalate resin, benzoxazine resin, etc. can be used. Thermosetting resins usually crosslink with other components, crosslink or polymerize with themselves, or close rings themselves, due to external stimuli such as heat. In addition, a resin that has undergone a ring-closing reaction may further crosslink thereafter.

The thermosetting resin preferably contains an epoxy resin. Since the epoxy groups in the epoxy resin react sufficiently and harden when heated at about 170° C., the epoxy resin is suitable for application to a hardening reaction at about 170° C. In addition, since the polymerization reaction of the epoxy groups is unlikely to produce elimination products, there is also the merit of suppressing film shrinkage.
More preferably, 90 mass % or more of the thermosetting resin is an epoxy resin. Still more preferably, the photosensitive resin composition of the present embodiment contains only an epoxy resin as the thermosetting resin.

From one point of view, the thermosetting resin preferably contains an epoxy resin having a glycidylbenzene skeleton. The glycidyloxybenzene skeleton can be a structure in which some hydrogen atoms of benzene (C ₆ H ₆ ) are substituted with one or more glycidyloxy groups. It is considered that the use of an epoxy resin having a glycidylbenzene skeleton containing a relatively rigid benzene increases the glass transition temperature of the cured film, and further enhances the thermal stability of the cured film. This is preferable in terms of further improving the reliability of electronic devices. In addition, an epoxy resin having a glycidylbenzene skeleton is also preferable in terms of sensitivity.

The glycidyloxybenzene skeleton may have a substituent other than a hydrogen atom and a glycidyloxy group. On the other hand, from the viewpoint of cost, etc., the glycidyloxybenzene skeleton may not have a substituent other than a hydrogen atom and a glycidyloxy group.

From the viewpoint of increasing the glass transition temperature of the cured film and improving the thermal reliability of the electronic device, it is preferable that the glycidyloxybenzene skeleton contains a diglycidyloxybenzene skeleton (a benzene skeleton having two glycidyloxy groups).

The epoxy resin having a glycidylbenzene skeleton may contain both a monoglycidyloxybenzene skeleton and a diglycidyloxybenzene skeleton, or may contain only one of them. From the viewpoint of synthesis/availability, etc., the epoxy resin having a glycidylbenzene skeleton preferably contains both a monoglycidyloxybenzene skeleton and a diglycidyloxybenzene skeleton.
The epoxy resin having a glycidyl benzene skeleton preferably contains a diglycidyloxybenzene skeleton. It is considered that a cured film having an _E'220 of 0.5 GPa or more and 3.0 GPa or less is easily obtained by reacting two epoxy groups of the diglycidyloxybenzene skeleton. In addition, the use of an epoxy resin having a diglycidyl benzene skeleton tends to increase the glass transition temperature of the cured film. A high glass transition temperature of the cured film leads to improved reliability of electronic devices.

From another point of view, the thermosetting resin preferably contains an epoxy resin having a biphenyl skeleton. The biphenyl skeleton is a chemically rigid skeleton. Therefore, it is considered that by using an epoxy resin having a biphenyl skeleton, it is easy to design a photosensitive resin composition having _E'220 of 0.5 GPa or more and 3.0 GPa or less. It is considered that the thermal stability of the cured film is further improved, and the reliability of the electronic device is further improved.

A particularly preferred example of a thermosetting resin is an epoxy resin (A1) containing a biphenyl skeleton and a glycidyloxybenzene skeleton. The epoxy resin (A1) can contain a structural unit represented by the following general formula (1).

In the general formula (1), R is a glycidyloxy group, and m is an integer of 1 to 3. m is preferably 1 or 2.
When m is 1, the epoxy resin (A1) contains a biphenyl skeleton and a monoglycidyloxybenzene skeleton. When m is 2, the epoxy resin (A1) contains a biphenyl skeleton and a diglycidyloxybenzene skeleton. The epoxy resin (A1) may contain both a structural unit in which m is 1 and a structural unit in which m is 2. Of course, the epoxy resin (A1) may contain only one of a structural unit in which m is 1 and a structural unit in which m is 2. Preferably, the epoxy resin (A1) contains at least a structural unit in which m is 2.

As the epoxy resin, those having a glycidylbenzene skeleton and/or a biphenyl skeleton as described above can be preferably used, but other epoxy resins can also be used appropriately.
In addition, an epoxy resin having a glycidylbenzene skeleton and/or a biphenyl skeleton can be used in combination with an epoxy resin not having such a skeleton (also referred to as epoxy resin (A2)). This combination can reduce raw material costs and improve the balance of various performances.

As the epoxy resin (A2), for example, an epoxy resin having two or more epoxy groups in one molecule can be used. As the epoxy resin, a monomer, oligomer, or polymer in general can be used. There are no particular limitations on the molecular weight or molecular structure of the epoxy resin (A2).

Examples of the epoxy resin (A2) include phenol novolac type epoxy resins, cresol novolac type epoxy resins, cresol naphthol type epoxy resins, biphenyl type epoxy resins, biphenyl aralkyl type epoxy resins, phenoxy resins, naphthalene skeleton type epoxy resins, bisphenol A type epoxy resins, bisphenol A diglycidyl ether type epoxy resins, bisphenol F type epoxy resins, bisphenol F diglycidyl ether type epoxy resins, cresol novolac type epoxy resins, aromatic polyfunctional epoxy resins, aliphatic epoxy resins, aliphatic polyfunctional epoxy resins, alicyclic epoxy resins, and polyfunctional alicyclic epoxy resins.
The epoxy resin (A2) may be used alone or in combination of two or more.

When the epoxy resin (A2) is used, the epoxy resin (A2) preferably contains a polyfunctional epoxy resin having three or more functional groups in the molecule (i.e., a polyfunctional epoxy resin having three or more epoxy groups in one molecule), which allows the film to be sufficiently cured, and can improve the heat resistance and durability of the film as a permanent film, for example.
There is no particular upper limit to the number of functional groups in the polyfunctional epoxy resin, but it is, for example, 10 or less, preferably 7 or less, and more preferably 5 or less.

Examples of trifunctional or higher polyfunctional epoxy resins include phenol novolac type epoxy resins, cresol novolac type epoxy resins, triphenylmethane type epoxy resins, dicyclopentadiene type epoxy resins, bisphenol A type epoxy resins, and tetramethylbisphenol F type epoxy resins.

The epoxy resin (A2) may be solid or liquid at 25°C (room temperature). By using an epoxy resin (A2) that is solid at 25°C (room temperature), it is easy to improve the mechanical properties of the final cured film. In addition, by using an epoxy resin (A2) that is liquid at 25°C (room temperature), it is easy to improve, for example, the brittleness of the film. Furthermore, it is expected that the flatness during spin coating will be improved.

The weight average molecular weight of the epoxy resin (A2) is not particularly limited, but is, for example, 100 to 50,000, and preferably 500 to 10,000. By adjusting the molecular weight of the epoxy resin (A2), for example, the above-mentioned effects can be obtained more reliably.

When epoxy resin (A2) is used, its amount is preferably 0.1 to 50 mass %, more preferably 5 to 30 mass %, of the total thermosetting resin. By using a moderately large amount of epoxy resin (A2), it is easy to obtain the full effect of epoxy resin (A2). On the other hand, by not using too much epoxy resin (A2), for example, a sufficient amount of epoxy resin (A1) is contained in the composition, making it easy to balance various performances.

The content of the thermosetting resin in the photosensitive resin composition of the present embodiment is, for example, 40% by mass or more, preferably 45% by mass or more, and more preferably 50% by mass or more, based on the non-volatile components. This can sufficiently improve the heat resistance and mechanical strength of the finally obtained cured film.
The content of the thermosetting resin in the photosensitive resin composition of the present embodiment is, for example, 90% by mass or less, preferably 85% by mass or less, and more preferably 80% by mass or less, based on the non-volatile components of the photosensitive resin composition. This can improve patterning properties.
In the above, the non-volatile component means the remainder in the photosensitive resin composition excluding volatile components such as water, solvent, etc. In the case where a solvent is included, the content of the non-volatile component in the photosensitive resin composition relative to the total non-volatile components in the photosensitive resin composition refers to the content of the non-volatile component in the photosensitive resin composition relative to the total non-volatile components excluding the solvent.

(Phenoxy resin)
The photosensitive resin composition of the present embodiment preferably contains a phenoxy resin. This can increase the flexibility and improve the elongation of the cured film. In other words, the use of the phenoxy resin can improve the mechanical properties of the cured film.
In the narrow sense, a "phenoxy resin" is a polyhydroxy polyether synthesized from bisphenols and epichlorohydrin. In this specification, however, the term "phenoxy resin" also includes polymers (phenoxy resins in the broad sense) obtained by subjecting a polyfunctional epoxy resin to a polyfunctional phenolic polyaddition reaction.

The weight average molecular weight (Mw) of the phenoxy resin is not particularly limited, but is preferably, for example, 10,000 to 100,000, and more preferably 20,000 to 80,000. By using such a relatively high molecular weight phenoxy resin, it is possible to impart good flexibility to the resin film and sufficient solubility in a solvent.
The weight average molecular weight is measured, for example, as a polystyrene equivalent value by gel permeation chromatography (GPC).

The phenoxy resin may have reactive groups such as epoxy groups at both ends of the molecular chain or within the molecular chain. The reactive groups in the phenoxy resin are capable of crosslinking with the epoxy groups in the epoxy resin. By using such a phenoxy resin, the solvent resistance and heat resistance of the resin film can be improved.

Phenoxy resins that are solid at 25°C are preferably used. Specifically, phenoxy resins with a non-volatile content of 90% by mass or more are preferably used. By using such phenoxy resins, the mechanical properties of the cured product can be improved.

Examples of phenoxy resins include bisphenol A type phenoxy resin, bisphenol F type phenoxy resin, copolymer phenoxy resin of bisphenol A type and bisphenol F type, biphenyl type phenoxy resin, bisphenol S type phenoxy resin, copolymer phenoxy resin of biphenyl type phenoxy resin and bisphenol S type phenoxy resin, etc., and one or a mixture of two or more of these is used. Among these, bisphenol A type phenoxy resin or copolymer phenoxy resin of bisphenol A type and bisphenol F type is preferably used.

When the photosensitive resin composition contains a phenoxy resin, it may contain one or more phenoxy resins.
When the photosensitive resin composition contains the phenoxy resin, the lower limit of the amount thereof is, for example, 3 parts by mass, preferably 5 parts by mass, and more preferably 7 parts by mass, relative to 100 parts by mass of the thermosetting resin. This can improve flexibility and elongation.
The upper limit of the content of the phenoxy resin is, for example, 30 parts by mass, preferably 20 parts by mass, and more preferably 15 parts by mass, relative to 100 parts by mass of the thermosetting resin, which can increase the solubility of the phenoxy resin and realize a photosensitive resin composition with excellent coatability.

(Photocationic Polymerization Initiator)
The photosensitive resin composition of the present embodiment contains a cationic photopolymerization initiator, which can improve patterning performance such as sensitivity and resolution.
A photocationic polymerization initiator typically generates an active chemical species (cationic species) capable of polymerizing an epoxy group contained in an epoxy resin when irradiated with light such as g-rays or i-rays.

Examples of the photocationic polymerization initiator include onium salt compounds. More specifically, examples of the photocationic polymerization initiator include diazonium salts, iodonium salts such as diaryliodonium salts, sulfonium salts such as triarylsulfonium salts, triarylpyrilium salts, benzylpyridinium thiocyanates, dialkylphenacylsulfonium salts, and dialkylhydroxyphenylphosphonium salts.
Among these, it is preferable to use triarylsulfonium salts from the viewpoint of good patterning properties.

Examples of counter anions of onium salt compounds include borate anions, sulfonate anions, gallate anions, phosphorus anions, and antimony anions. More specifically, examples include sulfonate anions, disulfonylimide anions, hexafluorophosphate anions, fluoroantimonate anions, tetrafluoroborate anions, and tetrakis(pentafluorophenyl)borate anions.

When a photocationic polymerization initiator is used, it may be used alone or in combination of two or more kinds.
When a photocationic polymerization initiator is used, the amount thereof is, for example, 0.3 to 10 parts by mass, preferably 0.5 to 8 parts by mass, and more preferably 1 to 5 parts by mass, relative to 100 parts by mass of the thermosetting resin. By making the amount 0.3 parts by mass or more, it is possible to improve the patterning property. Also, by making the amount 10 parts by mass or less, it is possible to reduce the ionic components in the film, and it is possible to further improve the insulating property and reliability of the cured film.

(Adhesion aid)
The photosensitive resin composition of the present embodiment preferably contains an adhesion aid, which can, for example, further increase the adhesion to a substrate.

The adhesion aid is not particularly limited. For example, silane coupling agents such as amino group-containing silane coupling agents, epoxy group-containing silane coupling agents, (meth)acryloyl group-containing silane coupling agents, mercapto group-containing silane coupling agents, vinyl group-containing silane coupling agents, ureido group-containing silane coupling agents, and sulfide group-containing silane coupling agents can be used.
When a silane coupling agent is used, one type may be used alone, or two or more types may be used in combination.

Examples of amino group-containing silane coupling agents include bis(2-hydroxyethyl)-3-aminopropyltriethoxysilane, γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropylmethyldiethoxysilane, γ-aminopropylmethyldimethoxysilane, N-β(aminoethyl)γ-aminopropyltrimethoxysilane, N-β(aminoethyl)γ-aminopropyltriethoxysilane, N-β(aminoethyl)γ-aminopropylmethyldimethoxysilane, N-β(aminoethyl)γ-aminopropylmethyldiethoxysilane, and N-phenyl-γ-aminopropyltrimethoxysilane.
Examples of epoxy group-containing silane coupling agents include γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, and γ-glycidylpropyltrimethoxysilane.
Examples of the (meth)acryloyl group-containing silane coupling agent include γ-((meth)acryloyloxypropyl)trimethoxysilane, γ-((meth)acryloyloxypropyl)methyldimethoxysilane, and γ-((meth)acryloyloxypropyl)methyldiethoxysilane.
An example of the mercapto group-containing silane coupling agent is 3-mercaptopropyltrimethoxysilane.
Examples of the vinyl group-containing silane coupling agent include vinyltris(β-methoxyethoxy)silane, vinyltriethoxysilane, and vinyltrimethoxysilane.
An example of the ureido group-containing silane coupling agent is 3-ureidopropyltriethoxysilane.
Examples of the sulfide group-containing silane coupling agent include bis(3-(triethoxysilyl)propyl) disulfide, and bis(3-(triethoxysilyl)propyl) tetrasulfide.
Examples of the acid anhydride-containing silane coupling agent include 3-trimethoxysilylpropylsuccinic anhydride, 3-triethoxysilylpropylsuccinic anhydride, and 3-dimethylmethoxysilylpropylsuccinic anhydride.

Examples of adhesion aids include not only silane coupling agents, but also titanium coupling agents and zirconium coupling agents.

When an adhesion aid is used, it may be used alone or two or more kinds of adhesion aids may be used in combination.
When an adhesion assistant is used, the amount used is preferably 0.3 to 15 parts by mass, more preferably 0.4 to 12 parts by mass, and even more preferably 0.5 to 10 parts by mass, based on 100 parts by mass of the thermosetting resin.

(Surfactant)
The photosensitive resin composition of the present embodiment may contain a surfactant. By containing a surfactant, wettability during coating can be improved, and a uniform resin film and cured film can be obtained. Examples of the surfactant include fluorine-based surfactants, silicone-based surfactants, alkyl-based surfactants, and acrylic-based surfactants.

The surfactant preferably contains a surfactant containing at least one of a fluorine atom and a silicon atom. This contributes to obtaining a uniform resin film (improved coating properties), improving developability, and also improving adhesive strength. For example, such a surfactant is preferably a nonionic surfactant containing at least one of a fluorine atom and a silicon atom. Commercially available surfactants that can be used include, for example, the "Megafac" series manufactured by DIC Corporation, including F-251, F-253, F-281, F-430, F-477, F-551, F-552, F-553, F-554, F-555, F-556, F-557, F-558, F-559, F-560, F-561, F-562, F-563, F-565, and F-56. Fluorine-containing oligomer structure surfactants such as F-8, F-569, F-570, F-572, F-574, F-575, F-576, R-40, R-40-LM, R-41, and R-94; fluorine-containing nonionic surfactants such as F-tergent 250 and F-tergent 251 manufactured by Neos Co., Ltd.; and silicone surfactants such as the SILFOAM (registered trademark) series manufactured by Wacker Chemie (e.g. SD 100 TS, SD 670, SD 850, SD 860, and SD 882).

When the photosensitive resin composition contains a surfactant, the photosensitive resin composition may contain one or more surfactants.
When the photosensitive resin composition contains a surfactant, the amount thereof is, for example, 0.001 to 1 part by mass, preferably 0.005 to 0.5 parts by mass, based on 100 parts by mass of the thermosetting resin.

(solvent)
The photosensitive resin composition of the present embodiment preferably contains a solvent. This allows a photosensitive resin film to be easily formed on a stepped substrate by a coating method. When the photosensitive resin composition of the present embodiment contains a solvent, the photosensitive resin composition of the present embodiment is, for example, in the form of a varnish.
The solvent generally includes an organic solvent, and is not particularly limited as long as it can dissolve or disperse the above-mentioned components and does not substantially chemically react with the components.

Examples of organic solvents include acetone, methyl ethyl ketone, toluene, propylene glycol methyl ethyl ether, propylene glycol dimethyl ether, propylene glycol 1-monomethyl ether 2-acetate, diethylene glycol ethyl methyl ether, diethylene glycol monoethyl ether acetate, diethylene glycol monobutyl ether acetate, benzyl alcohol, propylene carbonate, ethylene glycol diacetate, propylene glycol diacetate, propylene glycol monomethyl ether acetate, dipropylene glycol methyl-n-propyl ether, butyl acetate, and γ-butyrolactone. These may be used alone or in combination.

When a solvent is used, it is used so that the concentration of non-volatile components in the photosensitive resin composition is preferably 30 to 75% by mass, more preferably 35 to 70% by mass. By using a solvent in this range, each component can be sufficiently dissolved or dispersed. In addition, good coatability can be ensured, which in turn leads to improved flatness during spin coating. Furthermore, by adjusting the content of non-volatile components, the viscosity of the photosensitive resin composition can be appropriately controlled.

(Other ingredients)
In addition to the above components, the photosensitive resin composition of the present embodiment may contain components other than the above components as necessary. Examples of such components include an antioxidant, a filler such as silica, a sensitizer, a film-forming agent, etc.

(Characteristics other than _E'220 )
Regarding the photosensitive resin composition of this embodiment, _E'220 is 0.5 GPa or more and 3.0 GPa or less, but by satisfying other characteristics, performance such as reliability can be further improved.

The 5% weight loss temperature T5 _% of the cured film obtained by heating the photosensitive resin composition of this embodiment at 170° C. for 2 hours is preferably 250° C. or higher, more preferably 300° C. or higher, and even more preferably 300° C. or higher and 500° C. or lower. By designing the photosensitive resin composition so that _T5% is 300° C. or higher, the reliability of electronic devices can be further improved.

In dynamic viscoelasticity measurement under the above [Conditions], the storage modulus E' ₂₅₀ of the photosensitive resin composition of this embodiment at 250° C. is preferably 0.3 GPa or more, more preferably 0.3 GPa or more and 3.0 GPa or less, and even more preferably 0.5 GPa or more and 2.0 GPa or less.
In dynamic viscoelasticity measurement under the above [Conditions], the storage modulus E' ₂₈₀ of the photosensitive resin composition of this embodiment at 280° C. is preferably 0.1 GPa or more, more preferably 0.1 GPa or more and 2.0 GPa or less, and even more preferably 0.2 GPa or more and 1.0 GPa or less.
In dynamic viscoelasticity measurement under the above [Conditions], the storage modulus E' _T5%-100 of the photosensitive resin composition of this embodiment at a temperature T _5% -100°C is preferably 0.1 GPa or more, more preferably 0.1 GPa or more and 2.0 GPa or less, and even more preferably 0.2 GPa or more and 1.0 GPa or less (T _5% is defined as above).
It is believed that by designing a photosensitive resin composition so that E' ₂₅₀ , E' ₂₈₀ , E' _T5%-100, etc. are within the above numerical ranges, peeling of the cured film can be suppressed even under severe reflow conditions, leading to further improvement in the reliability of electronic devices.

(Pattern formation method)
The photosensitive resin composition of the present embodiment is usually negative type. That is, when the photosensitive resin composition of the present embodiment is formed into a film and exposed to light, the highly exposed region in the film becomes insoluble in a developer, and the less exposed region in the film dissolves in the developer. A negative type photosensitive resin composition may be more advantageous for forming a pattern of a specific shape than a positive type photosensitive resin composition.

The photosensitive resin composition of the present embodiment is preferably a chemically amplified type. In particular, by using a cationic photopolymerization initiator, the photosensitive resin composition can be designed so that an active chemical species generated from the cationic photopolymerization initiator by irradiation with light acts as a catalyst for a curing reaction such as a polymerization reaction, causing a change in solubility in a developer/curing reaction.
Since the photosensitive resin composition of this embodiment is a chemically amplified type, it is possible to further suppress the shrinkage of the film during the curing process. This "suppression of film shrinkage" leads to further improvement in the reliability of electronic devices. Although this is merely speculation, it is speculated that, for example, a high molecular weight material obtained by the reaction of an epoxy resin and a curing agent is prone to shrinkage upon curing because many three-dimensional network structures are formed, but in the polymerization reaction, many two-dimensional (linear) polymer structures are formed, so shrinkage is relatively suppressed.
Furthermore, since the photosensitive resin composition of the present embodiment is a chemically amplified type, the curing reaction proceeds catalytically, and it is presumed that the composition is more likely to cure at a relatively low temperature of about 170° C. than non-chemically amplified types.

<Electronic device manufacturing method, electronic device>
The method for producing an electronic device according to the present embodiment includes the steps of:
a film forming step of forming a photosensitive resin film on a substrate using the photosensitive resin composition;
an exposure step of exposing the photosensitive resin film to light;
a developing step of developing the exposed photosensitive resin film;
including.
In addition, the method for producing an electronic device according to the present embodiment preferably includes a thermal curing step of heating and curing the exposed photosensitive resin film after the above-mentioned development step, thereby making it possible to obtain a cured film with sufficient heat resistance.
In this manner, an electronic device having a cured film of the photosensitive resin composition of the present embodiment can be manufactured.

The manufacturing method of the electronic device of this embodiment and the structure of the electronic device having the cured product of the photosensitive resin composition of this embodiment will be described in more detail below with reference to the drawings.

Fig. 1 is a vertical cross-sectional view showing an example of an electronic device according to the present embodiment, and Fig. 2 is a partial enlarged view of a region surrounded by a dashed line in Fig. 1 .
In the following description, the upper side in FIG. 1 will be referred to as "upper" and the lower side as "lower".

The electronic device 1 shown in FIG. 1 has a so-called package-on-package structure, which includes a through-hole electrode substrate 2 and a semiconductor package 3 mounted thereon.

The through electrode substrate 2 includes an insulating layer 21, a plurality of through wirings 221 penetrating the insulating layer 21 from the upper surface to the lower surface, a semiconductor chip 23 embedded inside the insulating layer 21, a lower wiring layer 24 provided on the lower surface of the insulating layer 21, an upper wiring layer 25 provided on the upper surface of the insulating layer 21, and solder bumps 26 provided on the lower surface of the lower wiring layer 24.

The semiconductor package 3 includes a package substrate 31, a semiconductor chip 32 mounted on the package substrate 31, bonding wires 33 that electrically connect the semiconductor chip 32 and the package substrate 31, a sealing layer 34 in which the semiconductor chip 32 and the bonding wires 33 are embedded, and solder bumps 35 provided on the underside of the package substrate 31.

Then, the semiconductor package 3 is stacked on the through electrode substrate 2. This electrically connects the solder bumps 35 of the semiconductor package 3 to the upper wiring layer 25 of the through electrode substrate 2.

In such an electronic device 1, there is no need to use a thick substrate such as an organic substrate including a core layer in the through electrode substrate 2, so it is easy to achieve a low height. This can also contribute to the miniaturization of electronic devices that incorporate the electronic device 1.

In addition, because the through-hole electrode substrate 2 and the semiconductor package 3, each equipped with a different semiconductor chip, are stacked, the packaging density per unit area can be increased. This makes it possible to achieve both compactness and high performance.

The through electrode substrate 2 and the semiconductor package 3 will be described in further detail below.
The lower wiring layer 24 and the upper wiring layer 25 of the through electrode substrate 2 shown in Fig. 2 each include an insulating layer, a wiring layer, a through wiring, etc. As a result, the lower wiring layer 24 and the upper wiring layer 25 include wiring inside and on the surface, and are electrically connected to each other via the through wiring 221 that penetrates the insulating layer 21.

The wiring layer included in the lower wiring layer 24 is connected to the semiconductor chip 23 and the solder bumps 26. Therefore, the lower wiring layer 24 functions as a rewiring layer for the semiconductor chip 23, and the solder bumps 26 function as external terminals for the semiconductor chip 23.

As described above, the through wiring 221 shown in FIG. 2 is provided to penetrate the insulating layer 21. This electrically connects the lower wiring layer 24 and the upper wiring layer 25, making it possible to stack the through electrode substrate 2 and the semiconductor package 3, thereby improving the functionality of the electronic device 1.

Claim 13
2 is connected to the through-wires 221 and the solder bumps 35. As a result, the upper wiring layer 25 is electrically connected to the semiconductor chip 23 and functions as a rewiring layer for the semiconductor chip 23 and also functions as an interposer interposed between the semiconductor chip 23 and the package substrate 31. The cured film of the photosensitive resin composition of this embodiment can be used to form an insulating layer of the rewiring layer.

According to this embodiment, an electronic device can be realized that includes a semiconductor chip 23 and a rewiring layer (upper wiring layer 25) provided on the surface of the semiconductor chip 23, and the insulating layer in the rewiring layer is composed of a cured product of the photosensitive resin composition of this embodiment.

The through-hole wiring 221 penetrates the insulating layer 21, which has the effect of reinforcing the insulating layer 21. Therefore, even if the mechanical strength of the lower wiring layer 24 or the upper wiring layer 25 is low, it is possible to avoid a decrease in the mechanical strength of the entire through-hole electrode substrate 2. As a result, the lower wiring layer 24 and the upper wiring layer 25 can be made even thinner, and the electronic device 1 can be made even thinner.

In addition to the through-wires 221, the electronic device 1 shown in FIG. 1 also includes through-wires 222 that are arranged to penetrate the insulating layer 21 located on the upper surface of the semiconductor chip 23. This allows electrical connection between the upper surface of the semiconductor chip 23 and the upper wiring layer 25.

The insulating layer 21 is provided so as to cover the semiconductor chip 23. This enhances the effect of protecting the semiconductor chip 23. As a result, the reliability of the electronic device 1 can be improved. In addition, an electronic device 1 that can be easily applied to a mounting method such as the package-on-package structure according to this embodiment is obtained.

The diameter W (see FIG. 2) of the through-wire 221 is not particularly limited, but is preferably about 1 to 100 μm, and more preferably about 2 to 80 μm. This ensures the conductivity of the through-wire 221 without impairing the mechanical properties of the insulating layer 21.

The semiconductor package 3 shown in FIG. 1 may be a package of any type. For example, QFP (Quad Flat Package), SOP (Small Outline Package), BGA (Ball Grid Array), CSP (Chip Size Package), QFN (Quad Flat Non-leaded Package), SON (Small Outline Non-leaded Package), LF-BGA (Lead Frame BGA), etc.

The arrangement of the semiconductor chips 32 is not particularly limited, but as an example, in FIG. 1, multiple semiconductor chips 32 are stacked. This increases the packaging density. Note that the multiple semiconductor chips 32 may be arranged side by side in the planar direction, or may be stacked in the thickness direction and arranged side by side in the planar direction.

The package substrate 31 may be any substrate, but may include, for example, an insulating layer, a wiring layer, and through-hole wiring, which are not shown in the figure. Of these, the solder bumps 35 and the bonding wires 33 can be electrically connected via the through-hole wiring.

The sealing layer 34 is made of, for example, a known sealing resin material. By providing such a sealing layer 34, the semiconductor chip 32 and the bonding wires 33 can be protected from external forces and the external environment.

The semiconductor chip 23 of the through electrode substrate 2 and the semiconductor chip 32 of the semiconductor package 3 are arranged in close proximity to each other. This allows for benefits such as faster intercommunication and lower loss. From this perspective, for example, if one of the semiconductor chips 23 and 32 is a computing element such as a CPU (Central Processing Unit), GPU (Graphics Processing Unit), or AP (Application Processor), and the other is a storage element such as a DRAM (Dynamic Random Access Memory) or flash memory, these elements can be arranged in close proximity to each other within the same device. This allows for the realization of an electronic device 1 that is both highly functional and compact.

Next, a method for manufacturing the electronic device 1 shown in FIG. 1 will be described.

Figure 3 is a process diagram showing a method for manufacturing the electronic device 1 shown in Figure 1. Also, Figures 4 to 6 are diagrams for explaining the method for manufacturing the electronic device 1 shown in Figure 1.

The method for manufacturing the electronic device 1 includes a chip placement process S1 for obtaining an insulating layer 21 to embed the semiconductor chip 23 and through-hole wirings 221, 222 provided on the substrate 202, an upper wiring layer formation process S2 for forming an upper wiring layer 25 on the insulating layer 21 and the semiconductor chip 23, a substrate peeling process S3 for peeling the substrate 202, a lower wiring layer formation process S4 for forming a lower wiring layer 24, a solder bump formation process S5 for forming solder bumps 26 to obtain a through-hole electrode substrate 2, and a stacking process S6 for stacking a semiconductor package 3 on the through-hole electrode substrate 2.

Among these, the upper wiring layer formation process S2 includes a first resin film arrangement process S20 in which a photosensitive resin varnish 5 (a varnish-like photosensitive resin composition) is arranged on the insulating layer 21 and the semiconductor chip 23 to obtain a photosensitive resin layer 2510, a first exposure process S21 in which an exposure process is performed on the photosensitive resin layer 2510, a first development process S22 in which a development process is performed on the photosensitive resin layer 2510, a first curing process S23 in which a curing process is performed on the photosensitive resin layer 2510, and a wiring layer formation process S24 in which a wiring layer 253 is formed. The method includes a step S24, a second resin film arrangement step S25 in which a photosensitive resin varnish 5 is arranged on the photosensitive resin layer 2510 and the wiring layer 253 to obtain a photosensitive resin layer 2520, a second exposure step S26 in which an exposure process is performed on the photosensitive resin layer 2520, a second development step S27 in which a development process is performed on the photosensitive resin layer 2520, a second curing step S28 in which a curing process is performed on the photosensitive resin layer 2520, and a through wiring formation step S29 in which a through wiring 254 is formed in the opening 424 (through hole).

Each step will be explained below in order. The following manufacturing method is an example and is not intended to be limiting.

[1] Chip placement process S1
First, as shown in FIG. 4A, a chip-embedded structure 27 is prepared, which includes a substrate 202, a semiconductor chip 23 and through-wires 221, 222 provided on the substrate 202, and an insulating layer 21 provided to embed these.

The constituent material of the substrate 202 is not particularly limited, but examples thereof include metal materials, glass materials, ceramic materials, semiconductor materials, organic materials, etc. In addition, the substrate 202 may be a semiconductor wafer such as a silicon wafer, a glass wafer, etc.

The semiconductor chip 23 is adhered to the substrate 202. In this manufacturing method, as an example, multiple semiconductor chips 23 are spaced apart from each other and arranged side by side on the same substrate 202. The multiple semiconductor chips 23 may be of the same type or different types. In addition, the substrate 202 and the semiconductor chips 23 may be fixed together via an adhesive layer (not shown) such as a die attach film.

If necessary, an interposer (not shown) may be provided between the substrate 202 and the semiconductor chip 23. The interposer functions as, for example, a rewiring layer for the semiconductor chip 23. Therefore, the interposer may have pads (not shown) for electrically connecting to electrodes of the semiconductor chip 23, which will be described later. This allows the pad spacing and arrangement pattern of the semiconductor chip 23 to be changed, thereby further increasing the design freedom of the electronic device 1.
The interposer may be made of, for example, an inorganic substrate such as a silicon substrate, a ceramic substrate, or a glass substrate, or an organic substrate such as a resin substrate.

The insulating layer 21 may be, for example, a resin film (organic insulating layer) containing a thermosetting resin or a thermoplastic resin, such as those listed as components of the photosensitive resin composition, or may be a typical sealing material used in the semiconductor technology field.

Examples of materials for the through-wires 221 and 222 include copper or copper alloy, aluminum or aluminum alloy, gold or gold alloy, silver or silver alloy, nickel or nickel alloy, etc.

It is also possible to prepare a chip-embedded structure 27 that is manufactured using a method different from that described above.

[2] Upper wiring layer formation process S2
Next, an upper wiring layer 25 is formed on the insulating layer 21 and the semiconductor chip 23 .

[2-1] First resin film arrangement step S20
First, as shown in Fig. 4(b), a photosensitive resin varnish 5 is applied (placed) on the insulating layer 21 and the semiconductor chip 23. This results in a liquid coating of the photosensitive resin varnish 5 as shown in Fig. 4(c). The photosensitive resin varnish 5 is the photosensitive resin composition of this embodiment.

The photosensitive resin varnish 5 is applied using, for example, a spin coater, a bar coater, a spray device, an inkjet device, etc.

The viscosity of the photosensitive resin varnish 5 is not particularly limited, but is 10 cP to 6000 cP, preferably 20 cP to 5000 cP, and more preferably 30 cP to 4000 cP. When the viscosity of the photosensitive resin varnish 5 is within the above range, a thinner photosensitive resin layer 2510 (see FIG. 4(d)) can be formed. As a result, the upper wiring layer 25 can be made thinner, and the electronic device 1 can be easily made thinner.
The viscosity of the photosensitive resin varnish 5 is, for example, a value measured using a cone-plate type viscometer (TV-25, manufactured by Toki Sangyo Co., Ltd.) at a rotation speed of 100 rpm.

Next, the liquid coating of the photosensitive resin varnish 5 is dried. This results in the photosensitive resin layer 2510 shown in FIG. 4(d).

The drying conditions for the photosensitive resin varnish 5 are not particularly limited, but examples include heating at a temperature of 80 to 150°C for 1 to 60 minutes.

In this process, instead of the process of applying the photosensitive resin varnish 5, a process of disposing a photosensitive resin film made by forming the photosensitive resin varnish 5 into a film may be adopted. The photosensitive resin film is the photosensitive resin composition of this embodiment, and is a resin film having photosensitivity.

The photosensitive resin film is produced, for example, by applying a photosensitive resin varnish 5 onto a substrate such as a carrier film using various coating devices, and then drying the resulting coating.

After the photosensitive resin layer 2510 is formed in this manner, the photosensitive resin layer 2510 is subjected to a pre-exposure heat treatment as necessary. By performing the pre-exposure heat treatment, the molecules contained in the photosensitive resin layer 2510 are stabilized, and the reaction in the first exposure step S21 described below can be stabilized. On the other hand, by heating under the heating conditions described below, the adverse effects of heating on the photoacid generator can be minimized.

The temperature of the pre-exposure heat treatment is preferably 70 to 130°C, more preferably 75 to 120°C, and even more preferably 80 to 110°C. If the temperature of the pre-exposure heat treatment is below the lower limit, the purpose of stabilizing the molecules by the pre-exposure heat treatment may not be achieved. On the other hand, if the temperature of the pre-exposure heat treatment is above the upper limit, the movement of the photoacid generator becomes too active, and the effect of making it difficult to generate acid even when irradiated with light in the first exposure step S21 described below may become widespread, resulting in a decrease in the processing accuracy of the patterning.

The time of the pre-exposure heating treatment is appropriately set according to the temperature of the pre-exposure heating treatment, and is preferably 1 to 10 minutes, more preferably 2 to 8 minutes, and even more preferably 3 to 6 minutes at the above temperature. If the time of the pre-exposure heating treatment is below the lower limit, the heating time is insufficient, and the purpose of stabilizing the molecules by the pre-exposure heating treatment may not be achieved. On the other hand, if the time of the pre-exposure heating treatment is above the upper limit, the heating time is too long, and even if the temperature of the pre-exposure heating treatment is within the above range, the action of the photoacid generator may be inhibited.

The atmosphere for the heat treatment is not particularly limited. It may be an inert gas atmosphere or a reducing gas atmosphere, but considering the work efficiency, etc., it is preferably in air.

The atmospheric pressure is not particularly limited. It may be reduced pressure or pressurized pressure, but normal pressure is used in consideration of work efficiency, etc. Normal pressure refers to a pressure of about 30 to 150 kPa, and is preferably atmospheric pressure.

[2-2] First exposure step S21
Next, the photosensitive resin layer 2510 is subjected to an exposure process.

First, as shown in FIG. 4(d), a mask 412 is placed in a predetermined area on the photosensitive resin layer 2510. Then, light (active radiation) is irradiated through the mask 412. This causes the photosensitive resin layer 2510 to be exposed to light according to the pattern of the mask 412.

Figure 4(d) illustrates a case where the photosensitive resin layer 2510 has so-called negative photosensitivity. In this example, the areas of the photosensitive resin layer 2510 that correspond to the light-shielding parts of the mask 412 dissolve in the developer.

On the other hand, in the areas corresponding to the transparent portions of the mask 412, active chemical species are generated from the photocationic polymerization initiator. The active chemical species act as a catalyst for the curing reaction.

The amount of exposure in the exposure process is not particularly limited. It is preferably 100 to 2000 mJ/ ^cm2 , and more preferably 200 to 1000 mJ/ ^cm2 . This makes it possible to suppress underexposure and overexposure in the photosensitive resin layer 2510. As a result, high patterning accuracy can be finally achieved.
Thereafter, if necessary, the photosensitive resin layer 2510 is subjected to post-exposure heat treatment.

The temperature of the post-exposure heat treatment is not particularly limited. It is preferably 50 to 150°C, more preferably 50 to 130°C, further preferably 55 to 120°C, and particularly preferably 60 to 110°C. By carrying out the post-exposure heat treatment at such a temperature, the catalytic action of the generated acid is sufficiently enhanced, and the thermosetting resin can be reacted sufficiently in a shorter time. By setting the temperature within the above range, it is possible to suppress a decrease in the processing accuracy of the patterning due to the promotion of acid diffusion.
By setting the temperature of the post-exposure bake treatment to the above lower limit, the reaction rate of the thermosetting resin can be increased, and the productivity can be improved. On the other hand, by setting the temperature of the post-exposure bake treatment to the above upper limit, the deterioration of the processing accuracy of the patterning due to the promotion of acid diffusion can be suppressed.

The time for the post-exposure heat treatment is appropriately set depending on the temperature of the post-exposure heat treatment. At the above temperature, the time is preferably 1 to 30 minutes, more preferably 2 to 20 minutes, and even more preferably 3 to 15 minutes. By carrying out the post-exposure heat treatment for such a time, the thermosetting resin can be sufficiently reacted, and the diffusion of the acid can be suppressed, thereby preventing a decrease in the processing accuracy of the patterning.

The atmosphere for the post-exposure heat treatment is not particularly limited. It may be an inert gas atmosphere or a reducing gas atmosphere, but considering work efficiency, etc., it is preferably air.

The atmospheric pressure for the post-exposure heat treatment is not particularly limited. It may be reduced pressure or pressurized, but normal pressure is used in consideration of work efficiency, etc. This allows the pre-exposure heat treatment to be carried out relatively easily. Note that normal pressure refers to a pressure of about 30 to 150 kPa, and is preferably atmospheric pressure.

[2-3] First development step S22
Next, a development process is performed on the photosensitive resin layer 2510. As a result, openings 423 penetrating the photosensitive resin layer 2510 are formed in the regions corresponding to the light-shielding portions of the mask 412 (see FIG. 5(e)).

Examples of the developer include organic developers and water-soluble developers. In this embodiment, the developer preferably contains an organic solvent. More specifically, the developer is preferably a developer whose main component is an organic solvent (a developer in which 95% by mass or more of the components are organic solvents). By developing with a developer containing an organic solvent, it is possible to suppress swelling of the pattern caused by the developer compared to developing with an alkaline developer (aqueous). In other words, it is easier to obtain a finer pattern.

Specific examples of organic solvents that can be used in the developer include ketone-based solvents such as cyclopentanone, ester-based solvents such as propylene glycol monomethyl ether acetate (PGMEA) and butyl acetate, and ether-based solvents such as propylene glycol monomethyl ether.
As the developer, an organic solvent developer may be used that is made of only an organic solvent and does not contain any impurities other than those that are inevitably contained. Although the inevitably contained impurities include metal elements and moisture, from the viewpoint of preventing contamination of electronic devices, it is better to have as few inevitably contained impurities as possible.

The method of bringing the developer into contact with the photosensitive resin layer 2510 is not particularly limited. Commonly known methods such as immersion, paddle, and spray methods can be used as appropriate.

The development process time is usually in the range of about 5 to 300 seconds, preferably about 10 to 120 seconds, and is adjusted appropriately based on the thickness of the resin film and the shape of the pattern to be formed.

[2-4] First curing step S23
After the development process, the photosensitive resin layer 2510 is subjected to a curing process (post-development heat treatment). The conditions of the curing process are not particularly limited, but may be, for example, a heating temperature of about 160 to 250° C. and a heating time of about 30 to 240 minutes. This makes it possible to cure the photosensitive resin layer 2510 while suppressing the thermal effect on the semiconductor chip 23, and obtain the organic insulating layer 251.

[2-5] Wiring layer formation process S24
Next, a wiring layer 253 is formed on the organic insulating layer 251 (see FIG. 5(f)). The wiring layer 253 is formed by obtaining a metal layer using a vapor phase deposition method such as a sputtering method or a vacuum deposition method, and then patterning the metal layer by a photolithography method and an etching method.
Prior to the formation of the wiring layer 253, a surface modification treatment such as a plasma treatment may be performed.

[2-6] Second resin film arrangement step S25
5G, a photosensitive resin layer 2520 is obtained in the same manner as in the first resin film disposing step S20. The photosensitive resin layer 2520 is disposed so as to cover the wiring layer 253.
Thereafter, if necessary, a pre-exposure heat treatment is performed on the photosensitive resin layer 2520. The treatment conditions are, for example, the conditions described in the first resin film disposing step S20.

[2-7] Second exposure step S26
Next, an exposure process is performed on the photosensitive resin layer 2520. The process conditions are, for example, the conditions described in the first exposure step S21.
Thereafter, if necessary, a post-exposure heat treatment is performed on the photosensitive resin layer 2520. The treatment conditions are, for example, the conditions described in the first exposure step S21.

[2-8] Second development step S27
Next, a development process is performed on the photosensitive resin layer 2520. The development process conditions are, for example, the conditions described in the first development step S22. As a result, an opening 424 penetrating the photosensitive resin layers 2510 and 2520 is formed (see FIG. 5H).

[2-9] Second curing step S28
After the development process, the photosensitive resin layer 2520 is subjected to a curing process (post-development heat treatment). The curing conditions are, for example, the conditions described in the first curing step S23. As a result, the photosensitive resin layer 2520 is cured to obtain the organic insulating layer 252 (see FIG. 6I).

In this embodiment, the upper wiring layer 25 has two layers, the organic insulating layer 251 and the organic insulating layer 252, but it may have three or more layers. In this case, after the second curing step S28, a series of steps from the wiring layer forming step S24 to the second curing step S28 may be repeatedly added.

[2-10] Through-wiring formation process S29
Next, the through wiring 254 shown in FIG.

A known method is used to form the through-hole wiring 254, for example, the following method is used.

First, a seed layer (not shown) is formed on the organic insulating layer 252. The seed layer is formed on the inner surfaces (side surfaces and bottom surfaces) of the opening 424 and on the upper surface of the organic insulating layer 252.
The seed layer may be, for example, a copper seed layer, and may be formed by, for example, a sputtering method.
The seed layer may be made of the same metal as the through-wiring 254 to be formed, or may be made of a different metal.

Next, a resist layer (not shown) is formed on the seed layer (not shown) in an area other than the opening 424. Then, using this resist layer as a mask, the opening 424 is filled with metal. For example, electrolytic plating is used for this filling. Examples of the metal to be filled include copper or copper alloy, aluminum or aluminum alloy, gold or gold alloy, silver or silver alloy, nickel or nickel alloy, etc. In this way, the conductive material is embedded in the opening 424, and the through wiring 254 is formed.

Next, the resist layer (not shown) is removed, and further, the seed layer (not shown) on the organic insulating layer 252 is removed. For this purpose, for example, a flash etching method can be used.
The location where the through wiring 254 is formed is not limited to the location shown in the figure.

[3] Substrate peeling process S3
6(j), the substrate 202 is peeled off, thereby exposing the lower surface of the insulating layer 21.

[4] Lower wiring layer formation process S4
6(k), a lower wiring layer 24 is formed on the lower surface side of the insulating layer 21. The lower wiring layer 24 may be formed by any method, and may be formed, for example, in the same manner as the upper wiring layer forming step S2 described above.
The lower wiring layer 24 thus formed is electrically connected to the upper wiring layer 25 via the through-wires 221 .

[5] Solder bump formation process S5
6(L), solder bumps 26 are formed on the lower wiring layer 24. Furthermore, a protective film such as a solder resist layer may be formed on the upper wiring layer 25 and the lower wiring layer 24, if necessary.
In this manner, the through electrode substrate 2 is obtained.

The through electrode substrate 2 shown in FIG. 6(L) can be divided into multiple regions. Therefore, for example, by dividing the through electrode substrate 2 along the dashed lines shown in FIG. 6(L), multiple through electrode substrates 2 can be efficiently manufactured. For example, a diamond cutter or the like can be used for dividing the substrate.

[6] Lamination step S6
Next, the semiconductor package 3 is placed on the individual through hole electrode substrate 2. In this way, the electronic device 1 shown in FIG.

This manufacturing method for the electronic device 1 can be applied to wafer-level processes and panel-level processes using large-area substrates. This can improve the manufacturing efficiency of the electronic device 1 and reduce costs.

Although the embodiments of the present invention have been described above, these are merely examples of the present invention, and various configurations other than those described above can be adopted. Furthermore, the present invention is not limited to the above-described embodiments, and modifications and improvements within the scope of the present invention are included in the present invention.
Below, examples of reference forms are given.
1.
A photosensitive resin composition containing a thermosetting resin,
The photosensitive resin composition is heated at 170°C for 2 hours to obtain a cured film, and when the dynamic viscoelasticity is measured under the following conditions, the storage modulus E'220 at 220°C is _0.5 GPa or more and 3.0 GPa or less.
[conditions]
Frequency: 1Hz
Temperature: 30 to 300°C
Heating rate: 5° C./min
Measurement mode: Tensile mode
2.
1. The photosensitive resin composition according to 1.
The photosensitive resin composition, wherein the thermosetting resin includes an epoxy resin.
3.
1. The photosensitive resin composition according to 1. or 2.,
The photosensitive resin composition, wherein the thermosetting resin contains an epoxy resin having a glycidylbenzene skeleton.
4.
1. The photosensitive resin composition according to any one of 1. to 3.,
The photosensitive resin composition, wherein the thermosetting resin contains an epoxy resin having a biphenyl skeleton.
5.
1. The photosensitive resin composition according to any one of 1. to 4.,
A photosensitive resin composition comprising a phenoxy resin.
6.
1. The photosensitive resin composition according to any one of 1. to 5.,
The photosensitive resin composition further comprises a photocationic polymerization initiator.
7.
1. The photosensitive resin composition according to any one of 1. to 6.,
The photosensitive resin composition further comprises an adhesion aid.
8.
1. The photosensitive resin composition according to any one of 1. to 7.,
A negative-type photosensitive resin composition.
9.
1. The photosensitive resin composition according to any one of 1. to 8.,
The photosensitive resin composition has a storage modulus E' ₂₅₀ at 250° C. in the dynamic viscoelasticity measurement of 0.3 GPa or more.
10.
1. The photosensitive resin composition according to any one of claims 1 to 9,
The photosensitive resin composition has a storage modulus _E'280 at 280°C in the dynamic viscoelasticity measurement of 0.1 GPa or more.
11.
1. The photosensitive resin composition according to any one of 1. to 10.,
The photosensitive resin composition, wherein the 5% weight loss temperature T5 _% of the cured film is 300° C. or higher.
12.
11. The photosensitive resin composition according to 1.
The photosensitive resin composition has a storage modulus E' _T5%-100 at a temperature T _5% -100°C in the dynamic viscoelasticity measurement of 0.1 GPa or more.
13.
1. The photosensitive resin composition according to any one of 1. to 12.,
A photosensitive resin composition used to form insulating layers in electronic devices.
14.
A film-forming step of forming a photosensitive resin film on a substrate using the photosensitive resin composition according to any one of 1. to 13.;
an exposure step of exposing the photosensitive resin film to light;
a developing step of developing the exposed photosensitive resin film;
A method for manufacturing an electronic device, comprising:
15.
14. A method for producing the electronic device according to claim 1, further comprising the steps of:
A method for producing an electronic device, comprising the steps of: after the developing step, a thermal curing step of heating and curing the exposed photosensitive resin film.
16.
1. An electronic device comprising a cured film of the photosensitive resin composition according to any one of 1. to 13.

The embodiments of the present invention will be described in detail based on examples and comparative examples. It should be noted that the present invention is not limited to the examples.

<Synthesis of Thermosetting Resin (for Comparative Example)>
(Synthesis of Thermosetting Resin (A-6))
428 g of γ-butyrolactone, 155.11 g of 4,4′-oxydiphthalic dianhydride, and 130.14 g of 2-hydroxyethyl methacrylate were weighed into a 2 L separable flask, and completely dissolved by stirring at room temperature. Then, 79.1 g of pyridine was added while stirring at room temperature, and further stirred at room temperature for 16 hours.
Next, while the above solution was cooled and stirred under ice cooling, a solution prepared by dissolving 206.3 g of dicyclohexylcarbodiimide in 206 g of γ-butyrolactone was added over 30 minutes, followed by addition of 120.1 g of 4,4'-diaminodiphenyl ether and 240 g of γ-butyrolactone, and stirring was continued for another 2 hours at room temperature.
After the reaction was completed, 30 g of ethyl alcohol was added and stirred for 1 hour. Then, 400 g of γ-butyrolactone was added and further stirred, and the resulting precipitate was removed by filtration. Thus, a resin-containing liquid was obtained.
The resin-containing liquid thus obtained was added dropwise to a large amount of 30% by mass methanol solution at room temperature while stirring to precipitate the resin. The resulting precipitate was collected by filtration and dried in vacuum to obtain a thermosetting resin (A-6).
The weight average molecular weight (Mw) of the thermosetting resin (A-6) measured by GPC was 18,000.

<Preparation of Photosensitive Resin Composition>
The raw materials of each component mixed according to Table 1 were stirred at room temperature until the raw materials were completely dissolved to obtain a solution. The solution was then filtered through a polyethylene filter having a pore size of 0.2 μm. In this manner, a photosensitive resin composition was obtained.
Details of the raw materials for each component in Table 1 are as follows.

(Thermosetting resin)
(A-1) Epoxy resin "NC3500" manufactured by Nippon Kayaku Co., Ltd.
(A-2) Epoxy resin "NC3000" manufactured by Nippon Kayaku Co., Ltd.
(A-3) Epoxy resin "TC-5500E" manufactured by Nippon Steel & Sumitomo Metal Corporation
(A-4) Epoxy resin "EOCN-1020-55" manufactured by Nippon Kayaku Co., Ltd.
(A-5) Epoxy resin "EPPN-201" manufactured by Nippon Kayaku Co., Ltd.
(A-6) Polyimide resin synthesized above (for comparison)

(Photocationic polymerization initiator, etc.)
(B-1) CPI-310B (manufactured by San-Apro Co., Ltd.)
(B-2) Irgacure OXE02 (manufactured by BASF)

(Phenoxy resin)
(C-1) JER-1256 (manufactured by Mitsubishi Chemical Corporation)

(Adhesion aid)
(D-1) X-12-967C (manufactured by Shin-Etsu Chemical Co., Ltd.)
(D-2) KBM-403E (manufactured by Shin-Etsu Chemical Co., Ltd.)

(Surfactant)
(E-1) FC4432 (3M, fluorine-based)

(solvent)
(F-1) Propylene glycol monomethyl ether acetate (PGMEA)
(F-2) γ-butyrolactone (GBL)

The chemical structure of epoxy resin, one of the thermosetting resins, is shown below (some structures are unknown and are not shown).
In the epoxy resin (A-1), "m=1 and 2" means that the epoxy resin (A-1) contains both a monoglycidyloxybenzene skeleton and a diglycidyloxybenzene skeleton.

<Measurement of dynamic viscoelasticity of cured film (measurement of _E'220 etc.)>
(Preparation of test specimens)
The photosensitive resin composition was spin-coated onto an 8-inch silicon wafer so that the film thickness after drying would be 10 μm, and then heated at 120° C. for 3 minutes to obtain a coating film.
The obtained coating film was exposed to 1000 mJ/ ^cm2 with a high pressure mercury lamp. After that, it was baked at 120°C for 3 minutes after exposure, and then immersed in cyclopentanone for 30 seconds. After that, it was heated at 170°C for 90 minutes in a nitrogen atmosphere and cured. As a result, a cured film of the photosensitive resin composition was obtained.
The obtained cured product was cut together with the silicon wafer into a width of 5 mm using a dicing saw. The cut product was immersed in a 2 mass % aqueous hydrofluoric acid solution to peel off the cured film from the wafer.
The peeled cured film was dried at 60° C. for 10 hours to obtain a test piece (30 mm×5 mm×10 μm thick).

The obtained test piece was heated from 30°C to 300°C under conditions of a nitrogen atmosphere, a frequency of 1 Hz, a tensile mode, and a heating rate of 5°C/min, using a dynamic viscoelasticity measuring device (manufactured by TA Co., Ltd., Q800), to measure the storage modulus versus temperature. From the obtained storage modulus (E') curve, the storage modulus [MPa] at 220°C, 250°C, 280°C, and T _5% -100°C was read.
In general, the storage modulus (also called hot modulus) measured under these high temperature conditions is preferably large from the viewpoint of the thermal stability of the cured film.

<Measurement of 5% weight loss temperature of cured film>
A test piece was prepared in the same manner as in (Preparation of test piece) of <Measurement of dynamic viscoelasticity of cured film> above. A number of test pieces were prepared so that each piece was 10 mg, and were weighed and placed on a dedicated aluminum pan. This was set in a thermogravimetric and differential thermal analyzer (TGDTA-7200RV, manufactured by Seiko Instruments Inc.) and heated to 400°C at a heating rate of 10°C/min in a nitrogen atmosphere, and a graph of temperature vs. weight loss was obtained. The 5% weight loss temperature was read from the obtained graph.

<Measurement of Glass Transition Temperature Tg of Cured Film>
A test piece obtained in the same manner as in (Preparation of test piece) of <Measurement of dynamic viscoelasticity of cured film> above was heated to 300° C. at a heating rate of 10° C./min using a thermomechanical analyzer (TMA/SS6000, manufactured by Seiko Instruments Inc.) to measure the thermal expansion coefficient of the obtained test piece.
Next, the glass transition temperature Tg (unit: °C) of the cured product was calculated from the inflection point of the temperature-thermal expansion coefficient graph in the obtained measurement results. Incidentally, when no inflection point was observed in the graph, it was evaluated as Tg > 300 °C.
A high Tg of the cured film means that the cured film is more stable against heat. By forming an insulating film from a photosensitive resin composition capable of forming a cured film with a high Tg, the reliability of electronic devices can be further improved.

<Measurement of cure shrinkage rate>
The photosensitive resin composition was spin-coated on an 8-inch silicon wafer so that the film thickness after drying would be 10 μm, and then heated at 120° C. for 3 minutes to obtain a coating film. The thickness of this coating film was designated as A.
This coating film was exposed to 1000 mJ/ ^cm2 with a high pressure mercury lamp, then baked at 120°C for 3 minutes after exposure, and then immersed in cyclopentanone for 30 seconds. Then, it was heat-treated at 170°C for 90 minutes in a nitrogen atmosphere to obtain a cured film of the photosensitive resin composition. The thickness of this cured film is designated as B.
The cure shrinkage rate was calculated from the film thickness A and the film thickness B according to the following formula.
Cure shrinkage rate [%] = {(film thickness A - film thickness B) / film thickness A} x 100
The cure shrinkage rate is preferably small in order to maintain the flatness of the cured film.

<Measurement of Tensile Elongation>
A test specimen was prepared in the same manner as in (Preparation of test specimen) of <Measurement of dynamic viscoelasticity of cured film> above. A tensile test was carried out on the test specimen using a tensile tester (Tensilon RTC-1210A, manufactured by Orientec Co., Ltd.) in an atmosphere of 23°C according to a method conforming to JIS K 7161, and the tensile elongation of the test specimen was measured. The elongation speed in the tensile test was 5 mm/min. The unit of tensile elongation is %.

<Evaluation of Patterning Properties>
The photosensitive resin composition was applied to an 8-inch silicon wafer on which a copper plating film had been formed, using a spin coater, so that the film thickness after drying would be 5 μm. Then, the composition was dried at 100° C. for 3 minutes using a hot plate to obtain a coating film (film A).
This coating film (film A) was irradiated with i-line while changing the exposure dose through a mask (Test Chart No. 1: with a 0.5 to 50 μm wide pattern of remaining and removed portions) manufactured by Toppan Printing Co., Ltd. An i-line stepper (Nikon Corporation, NSR-4425i) was used as the light source of i-line.
After the i-ray irradiation, the film was additionally heated at 130° C. for 5 minutes, and then developed for 30 seconds using cyclopentanone as a developer. The developer was dried by spinning at 2500 rpm for 10 seconds to obtain a developed film (film B).
The film thickness was plotted against the exposure dose, and the exposure dose at which the difference in film thickness between the coated film (film A) and the 50 μm square remaining pattern in the developed film (film B) was 0.3 μm or less and a 5 μm round via pattern was opened was evaluated as the sensitivity (mJ/cm ² ). From the viewpoint of throughput, a smaller sensitivity is preferable.
In the table below, the sensitivity is indicated as ⊚ when it is 1000 mJ/cm ² or less, and as ◯ when it is 1000 mJ/cm ² or more and 2000 mJ/cm ² or less.

<Evaluation of Shear Strength at 250° C.>
Using the same method as in the above <Evaluation of patterning ability>, a 100 μm×100 μm remaining pattern was created on an 8-inch silicon wafer on which a copper plating film had been formed. Then, a curing treatment was performed at 170° C. for 2 hours in a nitrogen atmosphere to obtain a sample for measuring shear strength.
The shear strength (heated shear strength, unit: MPa) of the obtained sample was measured at 250° C. using a die shear device (Nordson Corporation, Dage-4000) under conditions of a shear speed of 200 nm/sec and a shear height of 1 μm. In terms of the reliability of the cured film, a larger value is preferable.

<Reliability evaluation using electronic devices>
(Creating a substrate for reliability evaluation)
The photosensitive resin composition was spin-coated onto a 12-inch silicon wafer so that the film thickness after drying would be 5 μm, and then heated at 120° C. for 3 minutes to obtain a coating film.
The obtained coating film was exposed to 1000 mJ/ ^cm2 with a high pressure mercury lamp. After that, it was baked at 120°C for 3 minutes after exposure, and then immersed in cyclopentanone for 30 seconds. After that, it was heated at 170°C for 90 minutes in a nitrogen atmosphere and cured. As a result, a first layer of a cured film of the photosensitive resin composition was obtained.
On the obtained cured film, Ti and Cu were deposited by sputtering to a thickness of 500 Å and 3000 Å, respectively. Then, Cu wiring was formed to a height of 5 μm by electrolytic plating through the resist. After peeling off the resist layer, the sputtered Cu and sputtered Ti were etched to form Cu wiring with a line/space of 2 μm/2 μm.
Next, the photosensitive resin composition was treated in the same manner as for the first layer, except that the film thickness was changed to 10 μm, to obtain a substrate for reliability evaluation.

(Reliability test)
The substrate for reliability evaluation obtained as described above was set in a temperature cycle test apparatus (TCT apparatus) and subjected to 1000 cycles of heating from -60°C to 200°C and then cooling to -60°C, each cycle consisting of one cycle.
Next, a cross section of the Cu wiring portion was exposed by FIB (focused ion beam) processing, and was observed by SEM. In each of the examples and comparative examples, a total of 10 interfaces between the wiring and the resin film were observed.
The case where no peeling was observed in any of the 10 places was rated as ◯ (good), and the case where peeling was observed in even one place was rated as × (bad).

The composition of the raw materials for each composition and the results of the above measurements/evaluations are summarized in Table 1.

As shown in Table 1, in the evaluation of the photosensitive resin compositions (Examples 1 to 5) containing a thermosetting resin and having an _E'220 of 0.5 GPa or more and 3.0 GPa or less, the 5% weight loss temperature was high, the glass transition temperature was high, the shear strength at 250°C was large, the cure shrinkage rate was small, and the reliability (peeling after reflow + TCT) results were good. These results showed that it is possible to manufacture a highly reliable electronic device by curing a photosensitive resin composition containing a thermosetting resin and having an _E'220 of 0.5 GPa or more and 3.0 GPa or less by heating at about 170°C to form a cured film.
In particular, the glass transition temperatures of the cured products of the photosensitive resin compositions of Examples 1 to 5 measured by a thermomechanical analyzer were surprisingly "over 300°C" (no inflection point was observed below 300°C in the temperature-thermal expansion coefficient graph). This measurement result means that the cured films obtained by curing the photosensitive resin compositions of Examples 1 to 5 at 170°C have extremely high thermal stability.

The tensile elongation of the cured films of the photosensitive resin compositions of Examples 1 to 5 was sufficiently large, and there were no particular problems with the mechanical properties of the cured films. Furthermore, the sensitivity of the photosensitive resin compositions of Examples 1 to 5 was good, and it is understood that they can be fully used as "photosensitive" resin compositions.

Looking at the examples in more detail, it can be seen that the use of phenoxy resin tends to further increase the tensile elongation by comparing Example 5 with Examples 1 to 4. In other words, it can be seen that the use of phenoxy resin can improve the mechanical properties of the cured film.
Furthermore, by comparing Examples 1 and 5 with 2 to 4, it can be seen that the sensitivity is further improved by using only an epoxy resin having a glycidylbenzene skeleton as the thermosetting resin.

1 Electronic device 1A Electronic device 1B Electronic device 2 Through electrode substrate 3 Semiconductor package 5 Photosensitive resin varnish 21 Insulating layer 23 Semiconductor chip 24 Lower wiring layer 24A Lower wiring layer 24B Lower wiring layer 25 Upper wiring layer 26 Solder bump 27 Chip embedded structure 31 Package substrate 32 Semiconductor chip 33 Bonding wire 34 Sealing layer 35 Solder bump 202 Substrate 221 Through wiring 222 Through wiring 231 Land 240 Organic insulating layer 241 Organic insulating layer 242 Organic insulating layer 243 Wiring layer 245 Bump adhesion layer 251 Organic insulating layer 252 Organic insulating layer 253 Wiring layer 254 Through wiring 412 Mask 423 Opening 424 Opening 2510 Photosensitive resin layer 2520 Photosensitive resin layer S1 Chip arrangement process S2 Upper wiring layer formation process S20 First resin film arrangement step S21 First exposure step S22 First development step S23 First hardening step S24 Wiring layer formation step S25 Second resin film arrangement step S26 Second exposure step S27 Second development step S28 Second hardening step S29 Through wiring formation step S3 Substrate peeling step S4 Lower wiring layer formation step S5 Solder bump formation step S6 Lamination step W Diameter

Claims (12)

A photosensitive resin composition containing a thermosetting resin,
the thermosetting resin includes an epoxy resin including a biphenyl skeleton and a glycidyloxybenzene skeleton,
Further contains a photocationic polymerization initiator,
A coating film having a dry thickness of 10 μm was formed on a silicon wafer using the photosensitive resin composition, and exposed to light at 1000 mJ/ ^cm2 using a high-pressure mercury lamp. The coating film was then baked at 120° C. for 3 minutes after exposure, immersed in cyclopentanone for 30 seconds, and then heated at 170° C. for 90 minutes in a nitrogen atmosphere to obtain a cured film. The cured film was cut together with the silicon wafer using a dicing saw to a width of 5 mm, and peeled from the wafer by immersing in a 2% by mass aqueous solution of hydrofluoric acid. The test piece was dried at 60° C. for 10 hours. When the dynamic viscoelasticity of the test piece was measured under the following conditions, the storage modulus _E′220 at 220° C. was 0.5 GPa or more and 3.0 GPa or less,
The photosensitive resin composition comprises:
(i) As an epoxy resin, only the epoxy resin having a biphenyl skeleton and a glycidyloxybenzene skeleton is included, or
(ii) A photosensitive resin composition comprising, as epoxy resins, an epoxy resin having a biphenyl skeleton and a glycidyloxybenzene skeleton, and an epoxy resin other than an epoxy resin having a glycidylbenzene skeleton and/or a biphenyl skeleton, etc., wherein the amount of the latter epoxy resin is 0.1 to 50 mass % of the total thermosetting resin .
[conditions]
Frequency: 1Hz
Temperature: 30 to 300°C
Heating rate: 5°C/min Measurement mode: Tensile mode The photosensitive resin composition according to claim 1,
A photosensitive resin composition comprising a phenoxy resin. The photosensitive resin composition according to claim 1 or 2,
The photosensitive resin composition further comprises an adhesion aid. The photosensitive resin composition according to any one of claims 1 to 3,
A negative-type photosensitive resin composition. The photosensitive resin composition according to any one of claims 1 to 4,
The photosensitive resin composition has a storage modulus E' ₂₅₀ at 250° C. in the dynamic viscoelasticity measurement of 0.3 GPa or more. The photosensitive resin composition according to any one of claims 1 to 5,
The photosensitive resin composition has a storage modulus _E'280 at 280°C in the dynamic viscoelasticity measurement of 0.1 GPa or more. The photosensitive resin composition according to any one of claims 1 to 6,
The photosensitive resin composition, wherein the 5% weight loss temperature T5 _% of the cured film is 300° C. or higher. The photosensitive resin composition according to claim 7,
The photosensitive resin composition has a storage modulus E' _T5%-100 at a temperature T _5% -100°C in the dynamic viscoelasticity measurement of 0.1 GPa or more. The photosensitive resin composition according to any one of claims 1 to 8,
A photosensitive resin composition used to form insulating layers in electronic devices. A film forming step of forming a photosensitive resin film on a substrate using the photosensitive resin composition according to any one of claims 1 to 9;
an exposure step of exposing the photosensitive resin film to light;
a developing step of developing the exposed photosensitive resin film;
A method for manufacturing an electronic device, comprising: 11. The method of claim 10, further comprising the steps of:
A method for producing an electronic device, comprising, after the developing step, a thermal curing step of heating and curing the exposed photosensitive resin film. An electronic device comprising a cured film of the photosensitive resin composition according to any one of claims 1 to 9.

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