JP7351080B2 - Semiconductor encapsulant and semiconductor device - Google Patents

Description

The present invention relates to a resin composition for semiconductor encapsulation and a semiconductor device. More specifically, the present invention relates to a resin composition used as a material for sealing a semiconductor element and a semiconductor device manufactured using the same.

Epoxy resin, a type of thermosetting resin, has properties such as excellent heat resistance and electrical insulation properties, so it is used in various fields such as electrical and electronic materials, paints, adhesives, and composite materials. It is used in In particular, in the field of electrical and electronic materials, epoxy resins are used for semiconductor encapsulation materials, printed circuit board materials, and the like.

In recent years, as electronic devices have become more sophisticated, lighter, thinner, and smaller, the frequency of transmission signals has been increasing. With this trend towards higher frequencies, there is a strong demand for materials used for printed wiring boards and semiconductor sealing materials to have a lower dielectric constant in the high frequency range. As a material that can achieve these low dielectric constants and low dielectric loss tangents, active ester compounds obtained by reacting dicyclopentadiene type phenolic resin with benzoyl chloride and bis(chlorocarbonyl)benzene are used as curing agents for epoxy resins. A technique is known (for example, Patent Document 1).

Patent Document 1 describes an epoxy resin composition using a specific active ester compound. Patent Document 1 discloses that by using a specific active ester compound, a cured resin product with a lower dielectric constant and dielectric loss tangent can be obtained than when using a conventional curing agent such as a phenol novolac resin. It is stated that.

Japanese Patent Application Publication No. 2004-169021

However, the epoxy resin composition described in Patent Document 1 does not satisfy recent dielectric properties, and does not have sufficient adhesion to inserts such as metal lead frames of semiconductor elements to be sealed. .

The present inventor has discovered that by blending an active ester resin with a specific structure into an epoxy resin composition, the cured product has a low dielectric constant and dielectric loss tangent, and has excellent adhesion to insert products such as metal lead frames. The present invention was completed based on the finding that a resin composition that can be suitably used as a semiconductor encapsulating material can be obtained.

式（１）において、
Ｂは、式（Ｂ）で表される構造であり、

（式（Ｂ）中、Ａｒは、置換または非置換のアリーレン基であり、Ｙは、単結合、炭素原子数２～６の直鎖または環式のアルキレン基、エーテル結合、カルボニル基、カルボニルオキシ基、スルフィド基、あるいはスルホン基である。）
Ａは、脂肪族環状炭化水素基を介して連結された置換または非置換のアリーレン基であり、
Ａｒ'は、置換または非置換のアリール基であり、
ｋは、繰り返し単位の平均値であり、０．２５～３．５の範囲である、
半導体封止材が提供される。
According to the invention,
A semiconductor encapsulating material used for encapsulating a semiconductor by a transfer molding method or a compression molding method,
The semiconductor encapsulant is in the form of a tablet or a pulverized product,
The semiconductor encapsulating material is made of a resin composition for semiconductor encapsulation,
The resin composition for semiconductor encapsulation includes:
Epoxy resin and
an active ester resin;
The active ester resin has a structure represented by formula (1),

In formula (1),
B is a structure represented by formula (B),

(In formula (B), Ar is a substituted or unsubstituted arylene group, and Y is a single bond, a linear or cyclic alkylene group having 2 to 6 carbon atoms, an ether bond, a carbonyl group, a carbonyloxy group, sulfide group, or sulfone group).
A is a substituted or unsubstituted arylene group connected via an aliphatic cyclic hydrocarbon group,
Ar' is a substituted or unsubstituted aryl group,
k is the average value of the repeating unit and ranges from 0.25 to 3.5,
A semiconductor encapsulant is provided.

Further, according to the present invention,
A substrate and
a semiconductor element mounted on the substrate;
A sealing material for sealing the semiconductor element,
A semiconductor device is provided, in which the encapsulating material is made of a cured product of the semiconductor encapsulating material .

According to the present invention, a resin composition for semiconductor encapsulation, which has a low dielectric constant and dielectric loss tangent of a cured product and has excellent adhesion to metals and moldability, and a cured product of the resin composition is included as a sealant. A semiconductor device is provided.

1 is a diagram showing a cross-sectional structure of an example of a semiconductor device using a resin composition for semiconductor encapsulation according to the present invention.

式（１）において、「Ｂ」は、式（Ｂ）で表される構造であり、

（式（Ｂ）中、Ａｒは、置換または非置換のアリーレン基であり、Ｙは、単結合、炭素原子数２～６の直鎖または環式のアルキレン基、エーテル結合、カルボニル基、カルボニルオキシ基、スルフィド基、あるいはスルホン基である。）
Ａは、脂肪族環状炭化水素基を介して連結された置換または非置換のアリーレン基であり、
Ａｒ’は、置換または非置換のアリール基であり、
ｋは、繰り返し単位の平均値であり、０．２５～３．５の範囲である。 Embodiments of the present invention will be described below.
The resin composition of this embodiment is a resin composition for use as a sealing material for sealing a semiconductor, and includes an epoxy resin and an active ester resin. In this embodiment, the active ester resin is a resin having a structure represented by formula (1).

In formula (1), "B" is a structure represented by formula (B),

(In formula (B), Ar is a substituted or unsubstituted arylene group, and Y is a single bond, a linear or cyclic alkylene group having 2 to 6 carbon atoms, an ether bond, a carbonyl group, a carbonyloxy group, sulfide group, or sulfone group).
A is a substituted or unsubstituted arylene group connected via an aliphatic cyclic hydrocarbon group,
Ar' is a substituted or unsubstituted aryl group,
k is the average value of repeating units and ranges from 0.25 to 3.5.

The resin composition of this embodiment has excellent dielectric properties and excellent adhesion to insert products by containing a specific active ester resin.

Further, the semiconductor device of this embodiment is characterized in that a semiconductor element is sealed with a cured product of the above-mentioned resin composition. Thereby, a semiconductor device with excellent reliability can be obtained.

As the epoxy resin used in the resin composition of this embodiment, those commonly used in epoxy resin compositions for semiconductor encapsulation can be used. Examples of these include phenols, including phenol novolac-type epoxy resins and orthocresol novolac-type epoxy resins; phenols such as cresol, xylenol, resorcinol, catechol, bisphenol A, and bisphenol F; and/or α-naphthol, β-naphthol, Obtained by epoxidizing a novolac resin obtained by condensing or co-condensing naphthols such as dihydroxynaphthalene with a compound having an aldehyde group such as formaldehyde, acetaldehyde, propionaldehyde, benzaldehyde, or salicylaldehyde under an acidic catalyst. Epoxy resins; diglycidyl ethers such as bisphenol A, bisphenol F, bisphenol S, and bisphenol A/D; biphenyl-type epoxy resins that are diglycidyl ethers of alkyl-substituted or unsubstituted biphenols; phenols and/or naphthols and dimethoxy para Epoxidized phenolic aralkyl resin synthesized from xylene or bis(methoxymethyl)biphenyl; stilbene type epoxy resin, hydroquinone type epoxy resin, glycidyl ester type epoxy obtained by reaction of polybasic acid such as phthalic acid or dimer acid with epichlorohydrin. Resin: Glycidylamine-type epoxy resin obtained by the reaction of polyamines such as diaminodiphenylmethane and isocyanuric acid with epichlorohydrin; Dicyclopentadiene-type epoxy resin, which is an epoxidized product of a co-condensed resin of dicyclopentadiene and phenols; Triphenol methane type epoxy resin; Trimethylolpropane type epoxy resin; Terpene modified epoxy resin; Linear aliphatic epoxy resin obtained by oxidizing olefin bonds with peracid such as peracetic acid; Alicyclic epoxy resin and epoxy resins obtained by modifying these epoxy resins with silicone, acrylonitrile, butadiene, isoprene rubber, polyamide resin, etc., and these may be used alone or in combination of two or more.

The active ester resin used in the resin composition of this embodiment has an active ester group represented by formula (B). In the curing reaction between the epoxy resin and the active ester resin, the active ester group of the active ester resin reacts with the epoxy group of the epoxy resin to generate a secondary hydroxyl group. This secondary hydroxyl group is blocked by the ester residue of the active ester resin. Therefore, the dielectric constant and dielectric loss tangent of the cured product are reduced.

式（Ｂ－１）～（Ｂ－６）において、
Ｒ^１はそれぞれ独立に水素原子、炭素原子数１～４のアルキル基、炭素原子数１～４のアルコキシ基、フェニル基、アラルキル基の何れかであり、
Ｒ^２はそれぞれ独立に炭素原子数１～４のアルキル基、炭素原子数１～４のアルコキシ基、フェニル基の何れかであり、Ｘは炭素原子数２～６の直鎖のアルキレン基、エーテル結合、カルボニル基、カルボニルオキシ基、スルフィド基、スルホン基のいずれかであり、
ｎ、ｐは１～４の整数である。 In one embodiment, the structure represented by the above formula (B) is preferably at least one selected from the following formulas (B-1) to (B-6).

In formulas (B-1) to (B-6),
R ¹ is each independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, a phenyl group, or an aralkyl group,
R ² is each independently an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, or a phenyl group, and X is a linear alkylene group having 2 to 6 carbon atoms, an ether a bond, a carbonyl group, a carbonyloxy group, a sulfide group, or a sulfone group,
n and p are integers from 1 to 4.

The structures represented by formulas (B-1) to (B-6) above are all structures with high orientation, so when an active ester resin containing them is used, the resulting resin composition will harden. The material has a low dielectric constant and a low dielectric loss tangent, and has excellent adhesion to metals, so it can be suitably used as a semiconductor encapsulation material. Among these, from the viewpoint of low dielectric constant and low dielectric loss tangent, active ester resins having a structure represented by formula (B-3) or (B-5) are preferable, and X in formula (B-3) is an ether bond. An active ester resin having a structure in which two carbonyloxy groups are at the 4,4'-positions in formula (B-5) is more preferable. Further, it is preferable that all R ¹ in each formula are hydrogen atoms.

"Ar'" in formula (1) is an aryl group, for example, phenyl group, o-tolyl group, m-tolyl group, p-tolyl group, 3,5-xylyl group, o-biphenyl group, m-biphenyl group. p-biphenyl group, 2-benzylphenyl group, 4-benzylphenyl group, 4-(α-cumyl)phenyl group, 1-naphthyl group, 2-naphthyl group, etc. Among these, 1-naphthyl group or 2-naphthyl group is preferable because a cured product with particularly low dielectric constant and dielectric loss tangent can be obtained.

In this embodiment, "A" in the active ester resin represented by formula (1) is a substituted or unsubstituted arylene group connected via an aliphatic cyclic hydrocarbon group, and as such an arylene group, Examples of the structure include a structure obtained by polyaddition reaction between an unsaturated aliphatic cyclic hydrocarbon compound containing two double bonds in one molecule and a phenolic compound.

Examples of the unsaturated aliphatic cyclic hydrocarbon compound containing two double bonds in one molecule include dicyclopentadiene, cyclopentadiene polymer, tetrahydroindene, 4-vinylcyclohexene, and 5-vinyl-2-norbornene. , limonene, etc., and each of these may be used alone or two or more types may be used in combination. Among these, dicyclopentadiene is preferred because it provides a cured product with excellent heat resistance. Since dicyclopentadiene is contained in petroleum fractions, industrial dicyclopentadiene may contain cyclopentadiene polymers and other aliphatic or aromatic diene compounds as impurities. However, in consideration of performance such as heat resistance, curability, and moldability, it is desirable to use a product with dicyclopentadiene purity of 90% by mass or more.

On the other hand, the phenolic compounds include, for example, phenol, cresol, xylenol, ethylphenol, isopropylphenol, butylphenol, octylphenol, nonylphenol, vinylphenol, isopropenylphenol, allylphenol, phenylphenol, benzylphenol, chlorophenol, bromophenol, Examples include 1-naphthol, 2-naphthol, 1,4-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, 2,3-dihydroxynaphthalene, 2,6-dihydroxynaphthalene, and 2,7-dihydroxynaphthalene, each of which can be used alone. It may be used or two or more types may be used together. Among these, phenol is preferred because it provides an active ester resin with high curability and excellent dielectric properties in the cured product.

式（Ａ）において、
Ｒ^３はそれぞれ独立に水素原子、炭素原子数１～４のアルキル基、炭素原子数１～４のアルコキシ基、フェニル基、アラルキル基の何れかであり、
ｌは０または１であり、ｍは１以上の整数である。 In a preferred embodiment, "A" in the active ester resin represented by formula (1) has a structure represented by formula (A). A resin composition containing an active ester resin in which "A" in formula (1) has the following structure has a cured product having a low dielectric constant and a low dielectric loss tangent, and has excellent adhesion to insert products.

In formula (A),
R ³ is each independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, a phenyl group, or an aralkyl group,
l is 0 or 1, and m is an integer of 1 or more.

（式（１－１）中、Ｒ^１及びＲ^３はそれぞれ独立に水素原子、炭素原子数１～４のアルキル基、炭素原子数１～４のアルコキシ基、フェニル基、アラルキル基の何れかであり、Ｚはフェニル基、ナフチル基、又は、芳香核上に炭素原子数１～４のアルキル基を１～３個有するフェニル基或いはナフチル基であり、ｌは０又は１であり、ｋは繰り返し単位の平均であり、０．２５～３．５である。）。

（式（１－２）中、Ｒ^１及びＲ^３はそれぞれ独立に水素原子、炭素原子数１～４のアルキル基、炭素原子数１～４のアルコキシ基、フェニル基、アラルキル基の何れかであり、Ｚはフェニル基、ナフチル基、又は、芳香核上に炭素原子数１～４のアルキル基を１～３個有するフェニル基或いはナフチル基であり、ｌは０又は１であり、ｋは繰り返し単位の平均であり、０．２５～３．５である。）。 Among the active ester resins represented by formula (1), particularly preferred are resins represented by formula (1-1) and formula (1-2) below.

(In formula (1-1), R ¹ and R ³ are each independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, a phenyl group, or an aralkyl group. , Z is a phenyl group, a naphthyl group, or a phenyl group or a naphthyl group having 1 to 3 alkyl groups having 1 to 4 carbon atoms on the aromatic nucleus, l is 0 or 1, and k is a repeating It is the average of the units and ranges from 0.25 to 3.5.)

(In formula (1-2), R ¹ and R ³ are each independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, a phenyl group, or an aralkyl group. , Z is a phenyl group, a naphthyl group, or a phenyl group or a naphthyl group having 1 to 3 alkyl groups having 1 to 4 carbon atoms on the aromatic nucleus, l is 0 or 1, and k is a repeating It is the average of the units and ranges from 0.25 to 3.5.)

The active ester resin used in the present invention comprises a phenolic compound (a) having a structure in which a plurality of aryl groups having a phenolic hydroxyl group are linked via an aliphatic cyclic hydrocarbon group, and an aromatic nucleus-containing dicarboxylic acid or a halide thereof. It can be produced by a known method of reacting (b) with an aromatic monohydroxy compound (c).

The reaction ratio of the phenolic compound (a), the aromatic nucleus-containing dicarboxylic acid or its halide (b), and the aromatic monohydroxy compound (c) can be adjusted as appropriate depending on the desired molecular design. Among them, since an active ester resin with higher curability is obtained, the phenolic compound (a) is The phenolic hydroxyl group possessed by the aromatic monohydroxy compound (c) is in the range of 0.25 to 0.90 mol, and the hydroxyl group possessed by the aromatic monohydroxy compound (c) is in the range of 0.10 to 0.75 mol. It is preferable that the phenolic hydroxyl group of the phenolic compound (a) is in the range of 0.50 to 0.75 mol, and the hydroxyl group of the aromatic monohydroxy compound (c) is 0.25 mol. It is more preferable to use each raw material in a proportion ranging from 0.50 mol to 0.50 mol.

In addition, the functional group equivalent of the active ester resin is determined by considering the total number of aryl carbonyloxy groups and phenolic hydroxyl groups in the resin structure as the number of functional groups in the resin. Therefore, it is preferably in the range of 200 g/eq or more and 230 g/eq or less, and more preferably in the range of 210 g/eq or more and 220 g/eq or less.

In the resin composition of this embodiment, the blending amount of the active ester resin and the epoxy resin is determined so that a cured product with excellent curability and low dielectric constant and dielectric loss tangent can be obtained. The ratio of epoxy groups in the epoxy resin to 1 equivalent is preferably 0.8 to 1.2 equivalents. Here, the active group in the active ester resin refers to an arylcarbonyloxy group and a phenolic hydroxyl group contained in the resin structure.

Further, other thermosetting resins may be blended into the resin composition of this embodiment, if necessary. Other thermosetting resins that can be used here include cyanate ester compounds, vinylbenzyl compounds, acrylic compounds, maleimide compounds, and copolymers of styrene and maleic anhydride. Among these, it is preferable to use an acrylic compound because the resulting resin composition has good fluidity. When using the other thermosetting resin described above, the amount used is not particularly limited as long as it does not impede the effects of the present invention, but it is 1% by mass or more and 50% by mass based on the entire solid content of the resin composition. % range is preferable.

In the composition of the present embodiment, the active ester resin is used in an amount of 1% by mass or more and 15% by mass or less, preferably 3% by mass or more and 10% by mass or less, based on the total solid content of the resin composition.

It is preferable that the resin composition of the present invention contains a curing agent. Examples of curing agents include amine compounds such as diaminodiphenylmethane, diethylenetriamine, triethylenetetramine, diaminodiphenylsulfone, isophoronediamine, imidazole, BF ₃ -amine complex, and guanidine derivatives; dicyandiamide, linolenic acid dimer, and ethylenediamine. Amide compounds such as polyamide resins synthesized from: phthalic anhydride, trimellitic anhydride, pyromellitic anhydride, maleic anhydride, tetrahydrophthalic anhydride, methyltetrahydrophthalic anhydride, methylnadic anhydride, hexahydrophthalic anhydride , acid anhydrides such as methylhexahydrophthalic anhydride; phenol novolak resin, cresol novolac resin, aromatic hydrocarbon formaldehyde resin modified phenol resin, dicyclopentadiene phenol addition type resin, phenol aralkyl resin, naphthol aralkyl resin, trimethylolmethane Resin, tetraphenylolethane resin, naphthol novolak resin, naphthol-phenol co-condensed novolak resin, naphthol-cresol co-condensed novolak resin, biphenyl-modified phenol resin (polyhydric phenol compound in which phenol cores are linked by bismethylene groups), biphenyl-modified resin Examples include polyhydric phenol compounds such as naphthol resin (a polyhydric naphthol compound in which a phenol nucleus is linked with bismethylene groups) and aminotriazine-modified phenol resin (a polyhydric phenol compound in which a phenol nucleus is linked to melamine, benzoguanamine, etc.).

When a curing agent is used, the amount thereof is preferably 1% by mass or more and 40% by mass or less based on the active ester resin. The lower limit of the amount of the curing agent added to the active ester resin is, for example, 1% by mass or more, 5% by mass or more, 10% by mass or more, 15% by mass or more, 20% by mass or more, 25% by mass or more, or 30% by mass. The upper limit can be 40% by mass or less, 35% by mass or less, 30% by mass or less, 25% by mass or less, 20% by mass or less, 15% by mass or less, and 10% by mass or less. . By using the curing agent in an amount within the above range, a resin composition having excellent curability can be obtained.

In one embodiment, an inorganic filler is blended into the resin composition to reduce hygroscopicity, reduce linear expansion coefficient, improve thermal conductivity, and improve strength. Inorganic fillers include fused silica, crystalline silica, alumina, calcium silicate, calcium carbonate, potassium titanate, silicon carbide, silicon nitride, aluminum nitride, boron nitride, beryllia, zirconia, zircon, forsterite, steatite, spinel, Examples include powders such as mullite and titania, beads made of spherical powders, and glass fibers. These inorganic fillers may be used alone or in combination of two or more. Among the above inorganic fillers, fused silica is preferred from the viewpoint of reducing the coefficient of linear expansion, and alumina is preferred from the viewpoint of high thermal conductivity, and the shape of the filler is spherical from the viewpoint of fluidity during molding and mold abrasion resistance. is preferred.

The blending amount of the inorganic filler is preferably in the range of 80% by mass or more and 96% by mass or less based on the total solid content of the resin composition, from the viewpoint of moldability, reduction of thermal expansion, and improvement of strength, and 82% by mass or less. % or more and 92% by mass or less, more preferably 86% by mass or more and 90% by mass or less. If it is less than the lower limit, the effect of reducing thermal expandability may not be obtained, and if it exceeds the upper limit, moldability may deteriorate.

In addition to the above components, the resin composition of the present embodiment may contain various components such as a silane coupling agent, a mold release agent, and a pigment, if necessary.

The resin composition of this embodiment can be manufactured by uniformly mixing the above-mentioned components. Examples of the manufacturing method include a method in which a predetermined amount of raw materials is sufficiently mixed using a mixer, etc., then melt-kneaded using a mixing roll, kneader, extruder, etc., and then cooled and pulverized. The obtained resin composition may be made into tablets with a size and mass suitable for molding conditions, if necessary.

Alternatively, the resin composition of this embodiment can be dissolved in an organic solvent and used as a liquid sealing material. In this case, it can also be used as a sheet or film material obtained by thinly coating a liquid resin composition on a plate or film and scattering an organic solvent under conditions such that the curing reaction of the resin does not progress much. .

Next, the semiconductor device of this embodiment will be explained. The semiconductor device of this embodiment is obtained by sealing a semiconductor element with the above-mentioned resin composition. Such semiconductor devices include devices such as semiconductor chips, active elements such as transistors, diodes, and thyristors, and passive elements such as capacitors, resistors, and coils, mounted on a supporting member of a copper lead frame, and the necessary parts are mounted. Examples include semiconductor devices sealed with the epoxy resin composition for semiconductor sealing of the present invention. In addition, such a semiconductor device may be manufactured by, for example, fixing a semiconductor element on a copper lead frame, connecting a terminal part of the element such as a bonding pad and a lead part with wire bonding or bumps, and then applying the semiconductor encapsulation method of the present invention. DIP (Dual Inline Package), PLCC (Plastic Leaded Chip Carrier), QFP (Quad Flat Package), SOP (Small Outline P), which are sealed by transfer molding using an epoxy resin composition for ackage), SOJ (Small General resin-sealed ICs such as Outline J-lead package, TSOP (Thin Small Outline Package), and TQFP (Thin Quad Flat Package) can be mentioned. Another example is a semiconductor package in which semiconductor chips are stacked in multiple stages, such as an MCP (Multi Chip Stacked Package).

FIG. 1 is a diagram showing a cross-sectional structure of an example of a semiconductor device using the resin composition for semiconductor encapsulation according to the present invention. In FIG. 1, semiconductor elements 1 are stacked and fixed in two stages on a die pad 3 with a cured die bonding material 2 interposed therebetween. The electrode pads of the semiconductor element 1 and the lead frame 5 are connected by gold wires 4. The semiconductor element 1 is sealed with a sealing material 6 made of a cured product of the above-mentioned sealing resin composition. Since the semiconductor element 1 is sealed with the cured product of the above-mentioned resin composition which has excellent dielectric properties and excellent adhesion to the insert product, a semiconductor device with excellent reliability can be obtained.

The most common method for encapsulating an element using the semiconductor encapsulating resin composition of the present invention is low-pressure transfer molding, but injection molding, compression molding, etc. may also be used. When the resin composition for semiconductor encapsulation is in liquid or paste form at room temperature, examples include a dispensing method, a casting method, and a printing method.

In addition to the general sealing method of directly encapsulating the element with resin, there is also a hollow package method in which the resin composition for semiconductor encapsulation does not come into direct contact with the element. It can also be suitably used as a resin composition.

式（１）において、
Ｂは、式（Ｂ）で表される構造であり、

（式（Ｂ）中、Ａｒは、置換または非置換のアリーレン基であり、Ｙは、単結合、炭素原子数２～６の直鎖または環式のアルキレン基、エーテル結合、カルボニル基、カルボニルオキシ基、スルフィド基、あるいはスルホン基である。）
Ａは、脂肪族環状炭化水素基を介して連結された置換または非置換のアリーレン基であり、
Ａｒ'は、置換または非置換のアリール基であり、
ｋは、繰り返し単位の平均値であり、０．２５～３．５の範囲である、
半導体封止用樹脂組成物。
２． 前記式（Ｂ）で表される構造は、式（Ｂ－１）～式（Ｂ－６）から選択される少なくとも１つである、１．に記載の半導体封止用樹脂組成物。

（式（Ｂ－１）～（Ｂ－６）中、Ｒ ^１ は、それぞれ独立に水素原子、炭素原子数１～４のアルキル基、炭素原子数１～４のアルコキシ基、フェニル基、またはアラルキル基であり、Ｒ ^２ はそれぞれ独立に炭素原子数１～４のアルキル基、炭素原子数１～４のアルコキシ基、またはフェニル基であり、Ｘは炭素原子数２～６の直鎖のアルキレン基、エーテル結合、カルボニル基、カルボニルオキシ基、スルフィド基、スルホン基のいずれかであり、ｎ、ｐは１～４の整数である。）。
３． 式（１）において、Ａが、式（Ａ）で表される構造を有する、１．または２．に記載の半導体封止用樹脂組成物。

（式（Ａ）中、Ｒ ^３ はそれぞれ独立に水素原子、炭素原子数１～４のアルキル基、炭素原子数１～４のアルコキシ基、フェニル基、アラルキル基の何れかであり、ｌは０または１であり、ｍは１以上の整数である。）。
４． 硬化剤をさらに含む、１．～３．のいずれかに記載の半導体封止用樹脂組成物。
５． 前記活性エステル樹脂が、当該封止樹脂組成物の固形分全体に対して、１質量％以上１５質量％以下の量である、１．～４．のいずれかに記載の半導体封止用樹脂組成物。
６． 前記硬化剤が、前記活性エステル樹脂に対して、１質量％以上４０質量％以下の量である、４．に記載の半導体封止用樹脂組成物。
７． 前記活性エステル樹脂が、２００ｇ／ｅｑ以上２３０ｇ／ｅｑ以下のエステル基当量を有する、１．～６．のいずれかに記載の半導体封止用樹脂組成物。
８． 無機充填剤をさらに含む、１．～７．のいずれかに記載の半導体封止用樹脂組成物。
９． 基板と、
前記基板上に搭載された半導体素子と、
前記半導体素子を封止する封止材と、を備え、
前記封止材が、１．～８．のいずれかに記載の半導体封止用樹脂組成物の硬化物からなる、半導体装置。
Although the embodiments of the present invention have been described above, these are merely examples of the present invention, and various configurations other than those described above can be adopted.
Examples of embodiments will be described below.
1. Epoxy resin and
an active ester resin;
The active ester resin has a structure represented by formula (1),

In formula (1),
B is a structure represented by formula (B),

(In formula (B), Ar is a substituted or unsubstituted arylene group, and Y is a single bond, a linear or cyclic alkylene group having 2 to 6 carbon atoms, an ether bond, a carbonyl group, a carbonyloxy group, sulfide group, or sulfone group).
A is a substituted or unsubstituted arylene group connected via an aliphatic cyclic hydrocarbon group,
Ar' is a substituted or unsubstituted aryl group,
k is the average value of the repeating unit and ranges from 0.25 to 3.5,
Resin composition for semiconductor encapsulation.
2. The structure represented by the formula (B) is at least one selected from formulas (B-1) to (B-6); 1. The resin composition for semiconductor encapsulation described in .

(In formulas (B-1) to (B-6), R ¹ is each independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, a phenyl group, or an aralkyl group. R ² is each independently an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, or a phenyl group, and X is a linear alkylene group having 2 to 6 carbon atoms. , an ether bond, a carbonyl group, a carbonyloxy group, a sulfide group, or a sulfone group, and n and p are integers of 1 to 4).
3. In formula (1), A has a structure represented by formula (A), 1. or 2. The resin composition for semiconductor encapsulation described in .

(In formula (A), R ³ is each independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, a phenyl group, or an aralkyl group, and l is 0 or 1, and m is an integer greater than or equal to 1).
4. further comprising a curing agent; 1. ~3. The resin composition for semiconductor encapsulation according to any one of the above.
5. 1. The amount of the active ester resin is 1% by mass or more and 15% by mass or less based on the total solid content of the sealing resin composition. ~4. The resin composition for semiconductor encapsulation according to any one of the above.
6. 4. The amount of the curing agent is 1% by mass or more and 40% by mass or less based on the active ester resin. The resin composition for semiconductor encapsulation described in .
7. 1. The active ester resin has an ester group equivalent of 200 g/eq or more and 230 g/eq or less. ~6. The resin composition for semiconductor encapsulation according to any one of the above.
8. Further comprising an inorganic filler, 1. ~7. The resin composition for semiconductor encapsulation according to any one of the above.
9. A substrate and
a semiconductor element mounted on the substrate;
A sealing material for sealing the semiconductor element,
The sealing material includes 1. ~8. A semiconductor device comprising a cured product of the resin composition for semiconductor encapsulation according to any one of the above.

Hereinafter, the present invention will be described in detail with reference to Examples, but the present invention is not limited to these examples.

(Example 1)
(Preparation of active ester resin (1))
In a flask equipped with a thermometer, dropping funnel, condenser tube, fractionator tube, and stirrer, add 279.1 g of biphenyl-4,4'-dicarboxylic acid dichloride (number of moles of acid chloride group: 2.0 moles) and 1338 g of toluene. were charged, and the system was replaced with nitrogen under reduced pressure to dissolve them. Next, 96.5 g (0.67 mol) of α-naphthol and 219.5 g (mol number of phenolic hydroxyl group: 1.33 mol) of dicyclopentadiene phenol resin were charged, and the system was replaced with nitrogen under reduced pressure to dissolve them. Ta. Thereafter, while performing a nitrogen gas purge, the inside of the system was controlled at 60° C. or lower, and 400 g of a 20% aqueous sodium hydroxide solution was added dropwise over a period of 3 hours. Stirring was then continued under these conditions for 1.0 hour. After the reaction was completed, the mixture was allowed to stand still for liquid separation, and the aqueous layer was removed. Furthermore, water was added to the toluene phase in which the reactants were dissolved, and the mixture was stirred and mixed for about 15 minutes, and the mixture was allowed to stand still for liquid separation to remove the aqueous layer. This operation was repeated until the pH of the aqueous layer reached 7. Thereafter, water was removed by dehydration using a decanter to obtain an active ester resin (1) in the form of a toluene solution with a nonvolatile content of 65%. The solution viscosity of this toluene solution with a nonvolatile content of 65% by mass was 5540 mPa·S (25° C.). Moreover, the softening point of the solid content of the active ester resin obtained by drying this was 138°C.

(Preparation of resin composition and evaluation of physical properties)
According to the formulation shown in Table 1 below, the epoxy resin was HP-7200H manufactured by DIC (dicyclopentadiene phenol type epoxy resin, melt viscosity at 150°C 0.30 poise, epoxy group equivalent 277 g/equivalent), and the above-mentioned curing agent was used. The active ester resin (1) obtained in (1) was blended, and dimethylaminopyridine was added in an amount of 0.5 phr as a curing catalyst, so that the final non-volatile content (N.V.) of each composition was 58% by mass. It was adjusted by blending methyl ethyl ketone so that A spiral flow of the obtained resin composition was produced by the following method.
<Measurement of spiral flow>
Using a mold for spiral flow measurement according to EMMI-I-66, the measurement result was 120 cm at a mold temperature of 175° C., an injection pressure of 6.8 MPa, and a curing time of 2 minutes.
<Measurement of dielectric properties>
Next, the obtained resin composition was molded at a mold temperature of 175° C., an injection pressure of 10 MPa, and a curing time of 2 minutes to produce a disk having a diameter of 50 mm and a thickness of 3 mm. The obtained cured product was analyzed in accordance with JIS-C-6481 using an impedance material analyzer "HP4291B" manufactured by Agilent Technologies Co., Ltd. After being completely dried, it was stored indoors at 23°C and 50% humidity for 24 hours. The dielectric constant and dielectric loss tangent of the test piece at 1 GHz were measured. The results are shown in Table 1.

(Semiconductor device fabrication and physical property evaluation)
Adhesion to each metal (Ag, Cu, Ni) was evaluated by the following method. The resin composition obtained above was molded on a substrate made of various metals (silver, copper, nickel) under conditions of 175° C., 6.9 MPa, and 2 minutes, and post-cured for 4 hours. Thereafter, the shear adhesion to each substrate was measured at room temperature. The results are shown in Table 1.

The cured product of the resin composition of Example 1 had excellent dielectric properties and excellent adhesion to the above metals. Therefore, it can be suitably used as a material for sealing a semiconductor element including a lead frame or the like.

1 Semiconductor element 2 Die bonding material cured body 3 Die pad 4 Gold wire 5 Lead frame 6 Sealing material (cured body of sealing resin composition)

Claims (9)

A semiconductor encapsulating material used for encapsulating a semiconductor by a transfer molding method or a compression molding method,
The semiconductor encapsulant is in the form of a tablet or a pulverized product,
The semiconductor encapsulating material is made of a resin composition for semiconductor encapsulation,
The resin composition for semiconductor encapsulation includes:
Epoxy resin and
an active ester resin;
The active ester resin has a structure represented by formula (1),

In formula (1),
B is a structure represented by formula (B),

(In formula (B), Ar is a substituted or unsubstituted arylene group, and Y is a single bond, a linear or cyclic alkylene group having 2 to 6 carbon atoms, an ether bond, a carbonyl group, a carbonyloxy group, sulfide group, or sulfone group).
A is a substituted or unsubstituted arylene group connected via an aliphatic cyclic hydrocarbon group,
Ar' is a substituted or unsubstituted aryl group,
k is the average value of the repeating unit and ranges from 0.25 to 3.5,
Semiconductor encapsulant. The semiconductor encapsulant material according to claim 1, wherein the structure represented by the formula (B) is at least one selected from formulas (B-1) to (B-6).

(In formulas (B-1) to (B-6), R ¹ is each independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, a phenyl group, or an aralkyl group. R ² is each independently an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, or a phenyl group, and X is a linear alkylene group having 2 to 6 carbon atoms. , an ether bond, a carbonyl group, a carbonyloxy group, a sulfide group, or a sulfone group, and n and p are integers of 1 to 4). The semiconductor encapsulant material according to claim 1 or 2, wherein in formula (1), A has a structure represented by formula (A).

(In formula (A), R ³ is each independently a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an alkoxy group having 1 to 4 carbon atoms, a phenyl group, or an aralkyl group, and l is 0 or 1, and m is an integer greater than or equal to 1). The semiconductor encapsulating material according to claim 1, wherein the semiconductor encapsulating resin composition further contains a curing agent. The semiconductor encapsulating material according to any one of claims 1 to 4, wherein the active ester resin is present in an amount of 1% by mass or more and 15% by mass or less based on the entire solid content of the semiconductor encapsulating resin composition. . The semiconductor encapsulant material according to claim 4, wherein the amount of the curing agent is 1% by mass or more and 40% by mass or less based on the active ester resin. The semiconductor encapsulant material according to any one of claims 1 to 6, wherein the active ester resin has an ester group equivalent of 200 g/eq or more and 230 g/eq or less. The semiconductor encapsulation material according to claim 1, wherein the semiconductor encapsulation resin composition further contains an inorganic filler. A substrate and
a semiconductor element mounted on the substrate;
A sealing material for sealing the semiconductor element,
A semiconductor device, wherein the encapsulant is a cured product of the semiconductor encapsulant according to any one of claims 1 to 8.

Images