JP7481990B2 - Optical film manufacturing method and optical film manufacturing apparatus - Google Patents

Description

The present invention relates to a method for manufacturing an optical film and an optical film manufacturing apparatus.

Optical films such as anti-reflection films, transparent conductive films, and electromagnetic wave shielding films include, for example, a base film and a multilayer film on the base film. The multilayer film includes, for example, a layer having a specific optical function (optical functional layer) and a protective layer on the optical functional layer. Such optical films are manufactured, for example, by the so-called roll-to-roll method. Technology related to the manufacturing method of optical films is described, for example, in Patent Document 1 below.

JP 2017-227898 A

In the process of manufacturing optical films using the roll-to-roll method, a long substrate film is transported through a series of process chambers connected in sequence, and each layer is formed on the substrate film in sequence. Each layer is formed by depositing a material by a dry coating method. This type of film deposition process is performed, for example, after a process of plasma processing the base on which the material is deposited. In this case, the film deposition process (dry coating method) is performed under a lower pressure condition than the plasma processing. That is, the pressure in the process chamber (film deposition chamber) during the film deposition process is lower than the pressure in the process chamber (plasma processing chamber) during the plasma processing, and a pressure difference occurs between the two chambers. Therefore, a part of the gas (such as an inert gas and a reactive gas) used in the plasma processing conventionally flows from the plasma processing chamber into the film deposition chamber. The amount of gas flowing in fluctuates, and the pressure in the film deposition chamber also fluctuates accordingly.

The present invention provides an optical film manufacturing method and manufacturing apparatus suitable for ensuring a stable low-pressure state in a film formation chamber located downstream of a plasma processing chamber in a roll-to-roll process.

The present invention [1] is a method for manufacturing an optical film while transporting a workpiece film in a roll-to-roll manner through a plurality of process chambers connected in sequence, the plurality of process chambers including a plasma processing chamber and a film-forming chamber arranged downstream of the plasma processing chamber in the direction of transport, the plasma processing chamber includes a plasma source arranged in the chamber and has at least one first exhaust port for exhausting the chamber, the first exhaust port being arranged upstream of the plasma source in the direction of transport, the film-forming chamber has a second exhaust port for exhausting the chamber, and the plasma processing chamber is evacuated through the first exhaust port while performing a plasma processing on the workpiece film in the plasma processing chamber, and a film-forming process is performed on the workpiece film by a dry coating method in the film-forming chamber while maintaining the pressure inside the film-forming chamber at a pressure lower than the pressure inside the plasma processing chamber during the plasma processing process by evacuating the film-forming chamber through the second exhaust port.

In the plasma treatment process of the optical film manufacturing method, the workpiece film is plasma treated while exhausting the plasma treatment chamber through a first exhaust port located upstream of the plasma source in the workpiece film transport direction (the first exhaust port is located on the opposite side of the plasma source from the deposition chamber). This configuration is suitable for suppressing the flow of gas used in the plasma treatment from the plasma source toward the deposition chamber, and is therefore suitable for suppressing the inflow of gas from the plasma treatment chamber into the deposition chamber. Such suppression of gas inflow is suitable for ensuring a stable low pressure state in the deposition chamber during the deposition process.

The present invention [2] includes the method for manufacturing an optical film described in [1] above, in which the at least one first exhaust port includes two first exhaust ports facing each other in a direction perpendicular to the conveying direction, and in the plasma processing step, the workpiece film is conveyed so as to pass between the two first exhaust ports.

This configuration is suitable for suppressing gas inflow from the plasma processing chamber to the film formation chamber during plasma processing, and is therefore suitable for ensuring a stable low pressure state in the film formation chamber during the film formation process.

The present invention [3] includes the method for manufacturing an optical film described in [1] or [2] above, in which the plasma processing chamber includes a cover housing surrounding the plasma source, the cover housing having an inlet opening and an outlet opening disposed downstream of the inlet opening in the transport direction, and in the plasma processing step, the workpiece film is transported so that it passes through the cover housing from the inlet opening to the outlet opening.

Such a cover housing is suitable for preventing the scattering of dust generated by plasma processing of the work film, and is therefore suitable for preventing the inflow of dust from the plasma processing chamber into the film forming chamber.

The present invention [4] includes the method for producing an optical film according to any one of [1] to [3] above, in which the plasma treatment chamber and the film formation chamber are adjacent to each other.

This configuration is suitable for miniaturizing the device that performs the optical film manufacturing method.

The present invention [5] includes the method for manufacturing an optical film described in [4] above, in which a workpiece film is transported from the plasma processing chamber to the film-forming chamber via a first airtight transport mechanism capable of transporting the workpiece film while maintaining airtightness between the plasma processing chamber and the film-forming chamber.

This configuration is suitable for ensuring a pressure difference between the plasma processing chamber (relatively high pressure) and the film formation chamber (relatively low pressure), and is therefore suitable for ensuring a stable low pressure state in the film formation chamber during the film formation process.

The present invention [6] includes the method for manufacturing an optical film according to any one of [1] to [5] above, in which the multiple process chambers include a post-process chamber that is arranged downstream of the film-forming chamber in the conveying direction and adjacent to the film-forming chamber, and a post-process that is performed on the work film in the post-process chamber after the film-forming process, and the film-forming process is performed in the film-forming chamber while maintaining a pressure in the film-forming chamber lower than the pressure in the post-process chamber during the post-process.

This configuration is suitable for downsizing the device that performs the optical film manufacturing method when performing post-processing after the film formation process.

The present invention [7] includes the method for manufacturing an optical film described in [6] above, in which the workpiece film is transported from the film-forming chamber to the post-processing chamber via a second airtight transport mechanism capable of transporting the workpiece film while maintaining airtightness between the film-forming chamber and the post-processing chamber.

This configuration is suitable for ensuring a pressure difference between the post-processing chamber (relatively high pressure) and the deposition chamber (relatively low pressure), and is therefore suitable for ensuring a stable low pressure state in the deposition chamber during the deposition process.

The present invention [8] includes the method for producing an optical film according to any one of the above [1] to [7], in which the dry coating method in the film formation step is a vacuum deposition method.

The optical film manufacturing method of the present invention is suitable for ensuring the low pressure condition required in a film formation chamber when a film formation process is carried out in the film formation chamber by vacuum deposition.

The present invention [9] is an optical film manufacturing device that manufactures an optical film while transporting a work film in a roll-to-roll manner, and includes a plurality of process chambers connected in series, at least one first exhaust pump, at least one second exhaust pump, and an airtight transport mechanism, and the plurality of process chambers include a plasma processing chamber for performing plasma processing on the work film, and a film formation chamber arranged downstream of the plasma processing chamber in the direction of transport for forming a film on the work film by a dry coating method, the plasma processing chamber includes a plasma source arranged in the chamber and has at least one first exhaust port for evacuating the chamber, the first exhaust port is arranged upstream of the plasma source in the direction of transport and connected to the first exhaust pump, and the film formation chamber has a second exhaust port for evacuating the chamber, and the second exhaust port is connected to the second exhaust pump.

In the optical film manufacturing apparatus of the present invention, the first exhaust port of the plasma processing chamber is disposed upstream of the plasma source in the workpiece film transport direction in the plasma processing chamber. That is, in the workpiece film transport direction, the first exhaust port is disposed on the opposite side of the plasma source from the deposition chamber. This configuration is suitable for suppressing the flow of gas used in plasma processing in the plasma processing chamber from the plasma source toward the deposition chamber during operation of the apparatus, and is therefore suitable for suppressing the inflow of gas from the plasma processing chamber to the deposition chamber. Such suppression of gas inflow is suitable for ensuring a stable low-pressure state in the deposition chamber.

The present invention [10] includes the optical film manufacturing apparatus described in [9] above, in which the at least one first exhaust port includes two first exhaust ports facing each other in a direction perpendicular to the conveying direction, each first exhaust port is connected to the first exhaust pump, and the workpiece film conveying path in the plasma processing chamber extends between the two first exhaust ports.

This configuration is suitable for suppressing gas inflow from the plasma processing chamber to the deposition chamber while the device is in operation, and is therefore suitable for ensuring a stable low pressure state in the deposition chamber.

The present invention [11] includes the optical film manufacturing apparatus described in [9] or [10] above, in which the plasma processing chamber includes a cover housing surrounding the plasma source, the cover housing having an entrance opening and an exit opening disposed downstream of the entrance opening in the transport direction, and the workpiece film transport path within the plasma processing chamber extends from the entrance opening to the exit opening so as to pass through the cover housing.

Such a cover housing is suitable for preventing the scattering of dust generated by plasma processing of the work film, and is therefore suitable for preventing the inflow of dust from the plasma processing chamber into the film forming chamber.

The present invention [12] includes an optical film manufacturing apparatus according to any one of [9] to [11] above, in which the plasma processing chamber and the film forming chamber are adjacent to each other.

This configuration is suitable for miniaturizing optical film manufacturing equipment.

The present invention [13] includes the optical film manufacturing apparatus described in [12] above, further comprising a first airtight transport mechanism configured to transport the work film from the plasma processing chamber to the film deposition chamber while maintaining airtightness between the plasma processing chamber and the film deposition chamber.

This configuration is suitable for ensuring a pressure difference between the plasma processing chamber (relatively high pressure) and the film formation chamber (relatively low pressure) when the device is in operation, and is therefore suitable for ensuring a stable low pressure state in the film formation chamber.

The present invention [14] includes the optical film manufacturing apparatus described in any one of [9] to [13] above, in which the plurality of process chambers further include a post-process chamber arranged downstream of the film-forming chamber in the conveying direction and adjacent to the film-forming chamber, and further includes a second airtight conveying mechanism configured to convey the work film from the film-forming chamber to the post-processing chamber while maintaining airtightness between the film-forming chamber and the post-processing chamber.

This configuration is suitable for ensuring a pressure difference between the post-processing chamber (relatively high pressure) and the deposition chamber (relatively low pressure), and is therefore suitable for ensuring a stable low-pressure state in the deposition chamber during the deposition process. In addition, a configuration in which the deposition chamber and the post-processing chamber are adjacent to each other is suitable for miniaturizing the optical film manufacturing device.

The present invention [15] includes the optical film manufacturing apparatus according to any one of the above [9] to [14], in which the film formation chamber is a vacuum deposition chamber in which a vacuum deposition method is carried out as the dry coating method.

The optical film manufacturing apparatus of the present invention is suitable for ensuring the low pressure condition required in a film formation chamber when the film formation chamber is a vacuum deposition chamber.

1 is a schematic configuration diagram of an embodiment of an optical film production apparatus of the present invention. 1 is a schematic cross-sectional view of an example of an optical film produced by one embodiment of the method for producing an optical film of the present invention. 2 is a schematic plan view of the plasma processing chamber shown in FIG. 1. 2 is a schematic cross-sectional view of the plasma processing chamber shown in FIG. 1.

The optical film manufacturing method of the present invention is a method of manufacturing an optical film while transporting a work film by a roll-to-roll method through multiple process chambers that are connected in series. The device X shown in FIG. 1 is an optical film manufacturing device that carries out the manufacturing method, and includes a payout chamber R1, a winding chamber R2, and multiple process chambers C. The device X corresponds to one embodiment of the optical film manufacturing device of the present invention.

Figure 2 is a schematic cross-sectional view of optical film F, which is an example of an optical film manufactured by the optical film manufacturing method and manufacturing apparatus of the present invention.

The optical film F is a transparent composite film having a transparent substrate S, an adhesive layer 10, an optical functional layer 20, and an antifouling layer 30 in that order in the thickness direction, and in this embodiment is an antireflection film. The optical film F preferably consists of a transparent substrate S, an adhesive layer 10, an optical functional layer 20, and an antifouling layer 30.

The transparent substrate S is, for example, a substrate film made of a transparent resin having flexibility. The material of the resin film is preferably a thermoplastic resin that combines transparency and strength. Examples of such thermoplastic resins include cellulose resins such as triacetyl cellulose, polyester resins, polyethersulfone resins, polysulfone resins, polycarbonate resins, polyamide resins, polyimide resins, polyolefin resins, acrylic resins, norbornene resins, polyarylate resins, polystyrene resins, and polyvinyl alcohol resins. These thermoplastic resins may be used alone or in combination of two or more types.

The resin film may contain one or more additives. Examples of additives include ultraviolet absorbers, antioxidants, lubricants, plasticizers, release agents, color inhibitors, flame retardants, antistatic agents, pigments, and colorants.

The transparent substrate S may have a hard coat layer having a higher hardness than the above-mentioned resin film on the surface on the side of the adhesive layer 10. The hard coat layer can be formed, for example, by applying a solution containing a curable resin onto the above-mentioned resin film to form a coating film, and then drying and curing the coating film. The hard coat layer may also be an anti-glare hard coat layer containing fine particles and having anti-glare properties. In this case, fine particles are blended into the above-mentioned solution for forming the hard coat layer. Examples of the fine particles include silica, alumina, titania, zirconia, calcium oxide, tin oxide, indium oxide, cadmium oxide, and antimony oxide.

From the viewpoint of strength, the thickness of the transparent substrate S is preferably 5 μm or more, more preferably 10 μm or more, and even more preferably 20 μm or more. From the viewpoint of handleability, the thickness of the transparent substrate S is preferably 300 μm or less, more preferably 200 μm or less. When the transparent substrate S has the above-mentioned hard coat layer, the thickness of the hard coat layer is preferably 0.5 μm or more, more preferably 1 μm or more, from the viewpoint of ensuring the hardness of the layer. The thickness of the hard coat layer is, for example, 10 μm or less.

From the viewpoint of transparency, the visible light transmittance of the transparent substrate S is preferably 80% or more, and more preferably 90% or more. The visible light transmittance of the transparent substrate S is, for example, 100% or less.

The surface of the transparent substrate S facing the adhesion layer 10 may be subjected to a surface modification treatment. Examples of surface modification treatments include corona treatment, plasma treatment, ozone treatment, primer treatment, glow treatment, and coupling agent treatment.

The adhesion layer 10 is a layer for ensuring adhesion between the transparent substrate S and the optical function layer 20. Examples of materials for the adhesion layer 10 include metals such as silicon, nickel, chromium, aluminum, tin, gold, silver, platinum, zinc, titanium, tungsten, zirconium, and palladium, alloys of two or more of these metals, and oxides of these metals. From the viewpoint of achieving both adhesion to both the organic layer (specifically the transparent substrate S) and the oxide layer (specifically the first high refractive index layer 21) and transparency of the adhesion layer 10, the material for the adhesion layer 10 is preferably silicon oxide (SiOx), more preferably SiOx with a lower oxygen content than the stoichiometric composition, and even more preferably SiOx with x between 1.2 and 1.9.

The thickness of the adhesion layer 10 is, for example, 1 nm or more and, for example, 10 nm or less, from the viewpoint of ensuring both the adhesion between the transparent substrate S and the optical functional layer 20 and the transparency of the adhesion layer 10.

In this embodiment, the optical function layer 20 is an anti-reflection layer for suppressing the reflection intensity of external light, and has high refractive index layers with a relatively large refractive index and low refractive index layers with a relatively small refractive index alternately in the thickness direction. In the anti-reflection layer, the net reflected light intensity is attenuated by utilizing the interference between reflected light at multiple interfaces in the multiple thin layers (high refractive index layers, low refractive index layers) that constitute it. In addition, in the anti-reflection layer, the interference effect of attenuating the reflected light intensity can be expressed by adjusting the optical film thickness (product of refractive index and thickness) of each thin layer. In this embodiment, specifically, the optical function layer 20 as such an anti-reflection layer has a first high refractive index layer 21, a first low refractive index layer 22, a second high refractive index layer 23, and a second low refractive index layer 24 in order toward one side in the thickness direction.

The first high refractive index layer 21 and the second high refractive index layer 23 are each made of a high refractive index material having a refractive index of preferably 1.9 or more at a wavelength of 550 nm. From the viewpoint of achieving both a high refractive index and low absorption of visible light, examples of the high refractive index material include niobium oxide (Nb ₂ O ₅ ), titanium oxide, zirconium oxide, tin-doped indium oxide (ITO), and antimony-doped tin oxide (ATO), and preferably niobium oxide is used.

The first low refractive index layer 22 and the second low refractive index layer 24 are each made of a low refractive index layer material having a refractive index of preferably 1.6 or less at a wavelength of 550 nm. From the viewpoint of achieving both a low refractive index and low absorption of visible light, examples of the low refractive index material include silicon dioxide (SiO ₂ ) and magnesium fluoride, and silicon dioxide is preferably used. As the material for the second low refractive index layer 24, silicon dioxide is preferably used from the viewpoint of ensuring adhesion between the second low refractive index layer 24 and the antifouling layer 30.

The anti-stain layer 30 is a layer having an anti-stain function in the optical film F, and is disposed on one surface in the thickness direction of the optical functional layer 20. The anti-stain function of the anti-stain layer 30 includes a function of suppressing adhesion of contaminants such as hand oils to the exposed surface of the optical film F (the surface opposite the transparent substrate S), and a function of facilitating removal of adhered contaminants.

Examples of materials for the antifouling layer 30 include organic compounds containing fluorine groups and silane-based compounds containing fluorine groups, and preferably organic compounds containing fluorine groups are used.

An example of an organic compound containing a fluorine group is an alkoxysilane compound having a perfluoropolyether group. An example of an alkoxysilane compound having a perfluoropolyether group is a compound represented by the following general formula (1).

R ¹ -R ² -O-(CH ₂ ) _m -Si(OR ³ ) ₃ (1)

In general formula (1), ^R1 represents a linear or branched fluorinated alkyl group (having, for example, 1 to 20 carbon atoms) in which one or more hydrogen atoms in the alkyl group are substituted with fluorine atoms, and preferably represents a perfluoroalkyl group in which all of the hydrogen atoms in the alkyl group are substituted with fluorine atoms.

R ² represents a structure containing at least one repeating structure of a perfluoropolyether group, and preferably represents a structure containing two repeating structures of a perfluoropolyether group. Examples of the repeating structure of a perfluoropolyether group include a repeating structure of a linear perfluoropolyether group such as -(OC _n F _n+1 ) _p - (n represents an integer of 1 to 20, and p represents an integer of 1 to 50; the same applies below), and a repeating structure of a branched perfluoropolyether group such as -(O(CF ₃ ) ₂ C) _p - and -(OCF ₂ (CF ₃ )CFCF ₂ ) _p -, and preferably a repeating structure of a linear perfluoropolyether group is used, and more preferably -(OCF ₂ ) _p - and -(OC ₂ F ₃ ) _p - are included.

^R3 represents an alkyl group having 1 to 4 carbon atoms, and preferably represents a methyl group.

m represents an integer of 1 or more. In addition, m represents an integer of preferably 20 or less, more preferably 10 or less, and even more preferably 5 or less.

Among such alkoxysilane compounds having a perfluoropolyether group, the compound shown in the following general formula (2) is preferably used.

_CF3- ( _OCF2 ) _q- ( _OC2F4 ) _r -O-( _CH2 ) _{3 -} Si( _OCH3 ) ₃ (2)

In general formula (2), q represents an integer of 1 or more and 50 or less, and r represents an integer of 1 or more and 50 or less.

As the alkoxysilane compound having a perfluoropolyether group, a commercially available product may be used. For example, OPTOOL UD509 (a compound represented by the above general formula (2), manufactured by Daikin Industries, Ltd.) may be used. In addition, the alkoxysilane compound having a perfluoropolyether group may be used alone or in combination of two or more types.

The thickness of the antifouling layer 30 is preferably 1 nm or more, more preferably 2 nm or more, and even more preferably 3 nm or more. The thickness of the antifouling layer 30 is preferably 100 nm or less, more preferably 50 nm or less, and even more preferably 30 nm or less.

From the viewpoint of achieving a high antifouling function in the antifouling layer 30, the pure water contact angle of the antifouling layer 30 is preferably 100 degrees or more, more preferably 102 degrees or more, and even more preferably 105 degrees or more. The pure water contact angle is, for example, 120 degrees or less. The pure water contact angle is determined by forming a water droplet with a diameter of 2 mm or less on the surface of the antifouling layer 30 and measuring the contact angle of the water droplet with respect to the surface of the antifouling layer 30.

The device X shown in FIG. 1 is a device that carries out the optical film manufacturing method of the present invention while transporting the work film W using a roll-to-roll method, and as described above, is equipped with a payout chamber R1, a winding chamber R2, and multiple process chambers C.

The unwinding chamber R1 is equipped with a unwinding roller 101 for unwinding the work film W. A transparent substrate S in the form of a roll is placed on the unwinding roller 101 as the work film W. In addition, a predetermined number of guide rollers G for guiding the work film W are provided in the unwinding chamber R1 as necessary.

The winding chamber R2 is equipped with a winding roller 102 for winding up the work film W. In addition, a predetermined number of guide rollers G for guiding the work film W are provided in the winding chamber R2 as necessary.

The multiple process chambers C are connected in sequence between the unwinding chamber R1 and the winding chamber R2, and include a first film-forming chamber C1, a connection chamber C2, a plasma processing chamber C3, a second film-forming chamber C4, and an inspection chamber C5.

The first film-forming chamber C1 is disposed next to the unwinding chamber R1 in the transport direction D (indicated by an arrow in FIG. 2) of the workpiece film W, and is equipped with a first sub-chamber C1a disposed on the upstream side and a second sub-chamber C1b disposed on the downstream side. The first film-forming chamber C1 is also connected to a vacuum pump (not shown) and is configured so that the interior of the chamber can be adjusted to a predetermined vacuum level.

The first compartment C1a includes a first film-forming roller 103 and sputtering chambers 201-205. The first film-forming roller 103 is a main guide roller for transporting the workpiece film W unwound from the unwinding chamber R1 within the first compartment C1a. The sputtering chambers 201-205 are each partitioned spaces within the first compartment C1a. The sputtering chambers 201-205 are arranged along the circumferential direction of the first film-forming roller 103 and each open toward the first film-forming roller 103. Each of the sputtering chambers 201-205 is provided with a cathode (cathode 211-215). A target (not shown) is arranged on each cathode as a film-forming material supply material so as to face the first film-forming roller 103. Each of the sputtering chambers 201-205 is provided with a power source for applying a voltage to the target to generate a glow discharge. Examples of power sources include DC power sources, AC power sources, MF power sources, and RF power sources. A predetermined number of guide rollers G for guiding the work film W are provided in the first compartment C1a as necessary. In addition, a line with a flow control valve (not shown) for introducing an inert gas into the chamber and a line with a flow control valve (not shown) for introducing a reactive gas into the chamber are connected to the first compartment C1a.

The second compartment C1b includes a second film-forming roller 104 and sputtering chambers 206-210. The second film-forming roller 104 is a main guide roller for transporting the workpiece film W in the second compartment C1b. The sputtering chambers 206-210 are each a partitioned space in the second compartment C2b. The sputtering chambers 206-210 are arranged along the circumferential direction of the second film-forming roller 104, and each open toward the second film-forming roller 104. Each of the sputtering chambers 206-210 is provided with a cathode (cathode 216-220). A target (not shown) is arranged on each cathode as a film-forming material supply material so as to face the second film-forming roller 104. Each of the sputtering chambers 206-210 is provided with a power source for applying a voltage to the target to generate a glow discharge. Examples of power sources include a DC power source, an AC power source, an MF power source, and an RF power source. In the second compartment C1b, a predetermined number of guide rollers G are provided as necessary to guide the workpiece film W. In addition, the second compartment C1b is connected to a line (not shown) with a flow control valve for introducing an inert gas into the chamber, and a line (not shown) with a flow control valve for introducing a reactive gas into the chamber.

In this embodiment, the second compartment C1b further includes a first optical inspection unit 301 for monitoring the optical characteristics of the workpiece film W that has passed through the second deposition roller 104.

The first optical inspection section 301 includes, for example, at least one optical inspection unit and a control section. The optical inspection unit includes, for example, a light source as a light irradiation means for the work film W, a first light detection section that detects light transmitted through the work film W and converts it into an electrical signal, and a second light detection section that detects light reflected by the work film W and converts it into an electrical signal. The light source can change the wavelength of the irradiated light within a predetermined range. The first and second light detection sections each output the converted electrical signal to the control section. The control section includes a calculation section. In the calculation section, for example, the transmittance and reflectance of the work film W at a specific wavelength are derived, and the peak wavelength of the reflectance is also derived.

The first optical inspection section 301 is configured to measure the optical characteristics of the work film W at multiple locations in the width direction of the work film W. Specifically, the first optical inspection section 301 is provided with optical inspection units at multiple locations in the width direction of the work film W. Alternatively, the first optical inspection section 301 is provided with a movable head that is equipped with an optical inspection unit and can move in the width direction of the work film W.

The connection chamber C2 is disposed next to the first film forming chamber C1 and before the plasma processing chamber C3 in the transport direction D of the workpiece film W. The connection chamber C2 is connected to a vacuum pump (not shown) and is configured to be able to adjust the pressure inside the chamber. When the device is in operation, the pressure inside the connection chamber C2 is maintained at a predetermined pressure between the pressure inside the first film forming chamber C1 and the pressure inside the plasma processing chamber C3. This ensures a pressure difference between the first film forming chamber C1 and the plasma processing chamber C3. In addition, a predetermined number of guide rollers (not shown) for guiding the workpiece film W may be provided inside the connection chamber C2 as necessary.

The plasma processing chamber C3 is disposed next to the connection chamber C2 in the transport direction D. The plasma processing chamber C3 is disposed one chamber upstream of the second film formation chamber C4 in the transport direction D, and the plasma processing chamber C3 and the second film formation chamber C4 are adjacent to each other. Such a plasma processing chamber C3 is a pre-process chamber with respect to the second film formation chamber C4.

As shown in Figures 3 and 4, the plasma processing chamber C3 includes a chamber 40, a plasma source 50 disposed within the chamber 40, a cover housing 60 that encloses the plasma source 50 within the chamber, and at least one first exhaust port 70 for exhausting air from within the chamber 40.

The chamber 40 has a first wall portion 41, a second wall portion 42, a third wall portion 43, a fourth wall portion 44, a fifth wall portion 45, and a sixth wall portion 46.

The first wall portion 41 is the bottom wall of the chamber 40. The second wall portion 42 is the ceiling wall of the chamber 40. The first wall portion 41 and the second wall portion 42 are spaced apart in the vertical direction.

The third wall portion 43 is located on the connection chamber C2 side of the chamber 40 and has an entrance opening 43a through which the workpiece film W can pass. The fourth wall portion 44 is located on the deposition chamber C4 side of the chamber 40 and has an exit opening (not shown) through which the workpiece film W can pass. The third wall portion 43 and the fourth wall portion 44 are spaced apart in the transport direction D.

The fifth wall portion 45 and the sixth wall portion 46 are spaced apart in a direction perpendicular to the conveying direction D and are each a side wall of the chamber 40.

The plasma source 50 includes, for example, a pair of electrodes (not shown) for generating plasma. The pair of electrodes are arranged so that the work film W passes between them.

The cover housing 60 has an entrance opening 61 and an exit opening 62 located downstream of the entrance opening 61 in the transport direction D. In the plasma processing process described below, the workpiece film W is transported so that it passes through the cover housing 60 from the entrance opening 61 to the exit opening 62.

The first exhaust port 70 is disposed upstream of the plasma source 50 in the transport direction D. In this embodiment, the plasma processing chamber C3 has two exhaust ports 71 and 72 as the first exhaust port 70.

The exhaust port 71 is an opening provided in the fifth wall portion 45. An exhaust pump 81 serving as a first exhaust pump is connected to the exhaust port 71. The exhaust port 72 is an opening provided in the sixth wall portion 46. An exhaust pump 82 serving as a first exhaust pump is connected to the exhaust port 72. These exhaust ports 71, 72 are arranged at a position that overlaps with the workpiece film transport path in the vertical direction. In addition, the exhaust ports 71, 72 face each other in a direction perpendicular to the transport direction D. In the plasma processing process described below, the workpiece film W is transported in the plasma processing chamber C3 so as to pass between the two exhaust ports 71, 72.

The second film formation chamber C4 is located downstream of the first film formation chamber C1 in the transport direction D, and in this embodiment, it is located next to the plasma processing chamber C3. The second film formation chamber C4 corresponds to the film formation chamber in this invention.

The second film-forming chamber C4 includes a material holding section 302 arranged inside the chamber, at least one second exhaust port 303, and a second exhaust pump 304 (indoor pressure reduction means). In addition, a predetermined number of guide rollers G for guiding the workpiece film W are provided inside the second film-forming chamber C4 as necessary.

A film-forming material supply (not shown) is arranged in the material holding section 302 so as to face the workpiece film W being transported in the second film-forming chamber C4. The material holding section 302 may be provided with a built-in resistance heating means, a built-in high-frequency induction heating means, or an electron beam heating means as a means for heating the film-forming material supply.

The second exhaust port 303 is provided in the wall of the second film formation chamber C4. The second exhaust pump 304 is a unit for reducing the pressure inside the second film formation chamber C4, and is connected to the second exhaust port 303. Examples of the second exhaust pump 304 include an oil rotary pump, a dry pump, a roots pump, a diffusion pump, a cryopump, and combinations of these.

The inspection chamber C5 is located downstream of the second film forming chamber C4 in the transport direction D, and the inspection chamber C5 and the second film forming chamber C4 are adjacent to each other. Such an inspection chamber C5 is a post-process chamber relative to the second film forming chamber C4. Furthermore, the inspection chamber C5 is located upstream of the winding chamber R2 in the transport direction D. In other words, the inspection chamber C5 is located between the second film forming chamber C4 and the winding chamber R2 in the transport direction D. Furthermore, the inspection chamber C5 is equipped with a second optical inspection unit 305 for monitoring the optical characteristics of the work film W that has passed through the second film forming chamber C4.

The second optical inspection section 305 includes, for example, at least one optical inspection unit and a control section. The configurations of the optical inspection unit and control section in the second optical inspection section 305 are the same as the configurations of the optical inspection unit and control section in the first optical inspection section 301 described above. In addition, the second optical inspection section 305 is configured to be able to measure the optical characteristics of the work film W at multiple locations in the width direction of the work film W, similar to the first optical inspection section 301.

In this embodiment, the device X is provided with a first airtight transport mechanism 310 between the second film forming chamber C4 and its pre-process chamber (a process chamber located one chamber upstream of the second film forming chamber C4, which is the plasma processing chamber C3 in this embodiment) to adjust the pressure difference between the two chambers. The first airtight transport mechanism 310 is configured to transport the workpiece film W from the plasma processing chamber C3 to the second film forming chamber C4 while maintaining airtightness between the plasma processing chamber C3 and the second film forming chamber C4. For example, the airtight transport mechanisms described in JP-A-2000-225331, JP-A-3-31474, JP-A-63-72972, and JP-A-62-70575 are used as such a first airtight transport mechanism 310 (the same applies to the airtight transport mechanisms described below).

In this embodiment, the device X is provided with a second airtight transport mechanism 320 between the second film forming chamber C4 and the subsequent process chamber (the process chamber located one downstream of the second film forming chamber C4, which is the inspection chamber C5 in this embodiment) for adjusting the pressure difference between the two chambers. The second airtight transport mechanism 320 is configured to transport the work film from the second film forming chamber C4 to the inspection chamber C5 while maintaining the airtightness between the second film forming chamber C4 and the inspection chamber C5.

The method for producing an optical film, which is one embodiment of the present invention, is carried out using the device X having the above-mentioned configuration. Specifically, it is as follows.

This manufacturing method is a method for manufacturing an optical film while transporting a workpiece film W using a roll-to-roll method, and includes, in this order, an adhesion layer forming process, an optical functional layer forming process, a plasma treatment process, and an antifouling layer forming process.

In this method, a transparent substrate S is unwound from the unwinding chamber R1 as a work film W. After being unwound from the unwinding chamber R1, the work film W is transported through a number of process chambers C, which are connected in series, including the first film-forming chamber C1 and the second film-forming chamber C4, and is wound up in the winding chamber R2. The transport speed is, for example, 0.4 m/min or more, and, for example, 10 m/min or less.

The adhesion layer forming process is carried out in the sputtering chamber 201 in the first film forming chamber C1. In this process, the adhesion layer 10 is formed on one surface in the thickness direction of the transparent substrate S as the workpiece film W by the sputtering method as a dry coating method. In the sputtering method, a negative voltage is applied to a target placed on a cathode while introducing gas into the sputtering chamber under vacuum conditions. This generates a glow discharge to ionize gas atoms, and the gas ions collide with the target surface at high speed to eject the target material from the target surface, and the ejected target material is deposited on a predetermined surface (on the workpiece film W in this embodiment). In order to form a metal oxide layer, reactive sputtering is preferable from the viewpoint of film formation speed. In reactive sputtering, a mixed gas of an inert gas such as argon and oxygen (reactive gas) is used as the above-mentioned gas, and a metal target is used as the target.

In the adhesion layer forming process, for example, a SiOx layer is formed as the adhesion layer 10. In this case, for example, a Si target is used as the target placed on the cathode 211, and reactive sputtering is performed while introducing argon and oxygen into the sputtering chamber 201. The proportion of oxygen contained in SiOx can be adjusted by adjusting the flow rate ratio (sccm) of argon and oxygen. In addition, the pressure in the sputtering chamber 201 during this process is, for example, 0.1 Pa or more and, for example, 1.0 Pa or less, preferably 0.7 Pa or less (the same applies to the pressures in the other sputtering chambers 202 to 210 described below).

The optical function layer forming process is carried out in the sputtering chambers 202-210 in the first film forming chamber C1. In this process, the optical function layer 20 is formed by sputtering, which is a dry coating method, on the portion of the workpiece film W that has been through the adhesion layer forming process (i.e., on the adhesion layer 10). In this embodiment, the optical function layer forming process includes the following first high refractive index layer forming process, first low refractive index layer forming process, second high refractive index layer forming process, and second low refractive index layer forming process, in this order.

The first high refractive index layer forming process is carried out in the sputtering chamber 202. In this process, the first high refractive index layer 21 is formed on the adhesive layer 10 in the workpiece film W. In this process, for example, a Nb ₂ O ₅ layer is formed as the first high refractive index layer 21. In this case, for example, a Nb target is used as the target arranged on the cathode 212, and reactive sputtering is performed while introducing argon and oxygen into the sputtering chamber 202. The optical film thickness (product of refractive index and thickness) of the first high refractive index layer 21 formed in this process is, for example, 20 nm or more, and, for example, 55 nm or less. The optical film thickness can be adjusted, for example, by adjusting the flow rate of introduced oxygen in reactive sputtering (the same applies to the optical film thicknesses of the first low refractive index layer 22, the second high refractive index layer 23, and the second low refractive index layer 24).

The first low refractive index layer forming process is carried out in the sputtering chamber 203. In this process, a first low refractive index layer 22 is formed on the first high refractive index layer 21 in the workpiece film W. In this process, for example, a _SiO2 layer is formed as the first low refractive index layer 22. In this case, for example, a Si target is used as the target disposed on the cathode 213, and reactive sputtering is carried out while introducing argon and oxygen into the sputtering chamber 203. The optical thickness of the first low refractive index layer 22 formed in this process is, for example, 15 nm or more, and, for example, 70 nm or less.

The second high refractive index layer forming process is carried out in the sputtering chambers 204 to 207. In this process, the second high refractive index layer 23 is formed on the first low refractive index layer 22 in the workpiece film W. In this process, for example, a Nb ₂ O ₅ layer is formed as the second high refractive index layer 23. In this case, for example, a Nb target is used as each target arranged on the cathodes 214 to 217, and reactive sputtering is performed while introducing argon and oxygen into the sputtering chambers 204 to 207. Nb ₂ O ₅ thin films are laminated and formed in each of the sputtering chambers 204 to 207 to form the second high refractive index layer 23. The optical thickness of the second high refractive index layer 23 formed in this process is, for example, 60 nm or more and, for example, 330 nm or less.

The second low refractive index layer forming process is carried out in the sputtering chambers 208-210. In this process, the second low refractive index layer 24 is formed on the second high refractive index layer 23 in the workpiece film W. In this process, for example, a SiO ₂ layer is formed as the second low refractive index layer 24. In this case, for example, a Nb target is used as each target arranged on the cathodes 218-220, and reactive sputtering is performed while introducing argon and oxygen into the sputtering chambers 208-210. A SiO ₂ thin film is laminated and formed in each of the sputtering chambers 208-210 to form the second low refractive index layer 24. The optical film thickness of the second low refractive index layer 24 formed in this process is, for example, 100 nm or more, and, for example, 160 nm or less.

In the first deposition chamber C1, the optical characteristics of the workpiece film W that has undergone the optical functional layer formation process are monitored by the first optical inspection unit 301. Based on the monitoring results, various conditions in the adhesion layer formation process and the optical functional layer formation process are adjusted as necessary. Such conditions include, for example, the transport speed of the workpiece film W and each sputtering condition in the sputtering chambers 201 to 210 (pressure inside the sputtering chamber, flow rate of the gas used, voltage applied to the target, etc.).

The plasma treatment process is carried out in the plasma treatment chamber C3. In the plasma treatment process, the workpiece film W is plasma treated while the plasma treatment chamber C3 is evacuated through the first exhaust port 70 (exhaust ports 71, 72). Specifically, in this process, the surface of the optical functional layer 20 of the workpiece film W on which the optical functional layer 20 has been formed through the first film formation chamber C1 is plasma treated. The pressure in the plasma treatment chamber C3 during plasma treatment is, for example, 10 Pa or less, preferably 5 Pa or less, and, for example, 0.1 Pa or more, as long as it is higher than the pressure in the second film formation chamber C4 described below.

The anti-stain layer forming process is carried out in the second film forming chamber C4 (the anti-stain layer forming process corresponds to the film forming process in the present invention). In the anti-stain layer forming process, the second exhaust pump 304 is operated to exhaust the second film forming chamber C4 through the second exhaust port 303, and the pressure inside the second film forming chamber C4 is maintained at a lower pressure than the pressure inside the plasma processing chamber C3 during the plasma processing process. At the same time, in this process, the anti-stain layer 30 is formed on the optical functional layer 20 in the work film W in the second film forming chamber C4 by vacuum deposition, which is a dry coating method.

Specifically, in this process, the second film forming chamber C4 is depressurized to a vacuum through the second exhaust port 303 by operating the second exhaust pump 304, and the film forming material supply material (not shown) arranged in the material holding unit 302 is heated to a predetermined temperature to perform the vacuum deposition method. The pressure (first pressure) in the second film forming chamber C4 during this process is lower than the pressure (second pressure) in the plasma processing chamber C3. The first pressure is, for example, 0.1 Pa or less, preferably 0.05 Pa or less, and for example, 1×10 ⁻⁵ Pa or more, as long as it is lower than the second pressure. The difference between the first pressure and the second pressure is preferably 0.1 Pa or more, more preferably 0.2 Pa or more. The difference between the first pressure and the second pressure is, for example, 10 Pa or less. The heating temperature in this process is, for example, 200° C. or more, and for example, 400° C. or less.

In the inspection chamber C5, the optical characteristics of the workpiece film W that has undergone the antifouling layer formation process are monitored by the second optical inspection unit 305. Based on the monitoring results, various conditions in the adhesion layer formation, optical function layer formation process, and antifouling layer formation process are adjusted as necessary. Such conditions include, for example, the transport speed of the workpiece film W, the sputtering conditions in the sputtering chambers 201 to 210 (pressure inside the sputtering chamber, flow rate of the gas used, voltage applied to the target, etc.), and the pressure in the second film formation chamber C4.

The multiple process chambers C may include an additional plasma treatment chamber (not shown) before the first film-forming chamber C1 (i.e., between the unwinding chamber R1 and the first film-forming chamber C1). When the multiple process chambers C include the plasma treatment chamber, a process of performing plasma treatment on one side in the thickness direction of the work film W (transparent substrate S) before it is transported into the first film-forming chamber C1 is carried out in the plasma treatment chamber. Such plasma treatment is suitable for ensuring the adhesion of the adhesive layer 10 to the transparent substrate S, and the adhesion of the optical functional layer 20 and the antifouling layer 30 to the transparent substrate S via the adhesive layer 10, and is therefore suitable for suppressing peeling of the antifouling layer 30.

Instead of the above-mentioned connection chamber C2, the multiple process chambers C may include an airtight transport mechanism between the first film formation chamber C1 and the plasma processing chamber C3 configured to transport the workpiece film W from the first film formation chamber C1 to the plasma processing chamber C3 while maintaining airtightness between the two chambers. Alternatively, in addition to the above-mentioned connection chamber C2, the multiple process chambers C may include an airtight transport mechanism between the connection chamber C2 and the plasma processing chamber C3 configured to transport the workpiece film W from the connection chamber C2 to the plasma processing chamber C3 while maintaining airtightness between the two chambers.

In this manner, optical film F is produced by device X.

In the plasma treatment process, as described above, in the plasma treatment chamber C3, the workpiece film W is plasma-treated while exhausting the plasma treatment chamber C3 through the first exhaust port 70 arranged upstream of the plasma source 50 in the transport direction D of the workpiece film W (the first exhaust port 70 is arranged on the opposite side of the plasma source 50 from the second film-forming chamber C4). Such a configuration is suitable for suppressing the flow of gas used in the plasma treatment from the plasma source 50 toward the second film-forming chamber C4, and therefore is suitable for suppressing the inflow of gas from the plasma treatment chamber C3 to the second film-forming chamber C4. Such suppression of gas inflow is suitable for ensuring a stable low-pressure state in the second film-forming chamber C4 during the film-forming process. In addition, the above configuration is suitable for suppressing the flow of dust generated by the plasma treatment of the workpiece film W from the plasma source 50 toward the second film-forming chamber C4, and therefore is suitable for suppressing the inflow of dust from the plasma treatment chamber C3 to the second film-forming chamber C4. This suppression of dust inflow makes it suitable for carrying out the film formation process in a clean environment in the second film formation chamber C4.

In the plasma processing step, as described above, the workpiece film W is transported so as to pass between the two first exhaust ports 70. This configuration is suitable for suppressing gas inflow from the plasma processing chamber C3 to the second film formation chamber C4 during plasma processing, and is therefore suitable for ensuring a stable low-pressure state in the second film formation chamber C4 during the film formation step.

In the plasma processing step, as described above, the workpiece film W is transported through the plasma processing chamber C3 so as to pass through the cover housing 60 that surrounds the plasma source 50. Such a cover housing 60 is suitable for suppressing the scattering of dust generated by the plasma processing of the workpiece film W, and therefore helps to suppress the inflow of dust from the plasma processing chamber C3 to the second film forming chamber C4.

The plasma processing chamber C3 and the second film forming chamber C4 are adjacent to each other as described above. Also, the second film forming chamber C4 and the inspection chamber C5 are adjacent to each other as described above. This configuration is suitable for miniaturizing the device X.

In the device X, the workpiece film W is transported from the plasma processing chamber C3 to the second film forming chamber C4 via a first airtight transport mechanism 310 capable of transporting the workpiece film W while maintaining airtightness between the plasma processing chamber C3 and the second film forming chamber C4. This configuration is suitable for ensuring a pressure difference between the plasma processing chamber C3 (relatively high pressure) and the second film forming chamber C4 (relatively low pressure), and is therefore suitable for ensuring a stable low pressure state in the second film forming chamber C4 during the film forming process.

In the device X, the workpiece film W is transported from the second film-forming chamber C4 to the inspection chamber C5 (post-processing chamber) via a second airtight transport mechanism capable of transporting the workpiece film W while maintaining airtightness between the second film-forming chamber C4 and the inspection chamber C5 (post-processing chamber). This configuration is suitable for ensuring a pressure difference between the second film-forming chamber C4 (relatively low pressure) and the inspection chamber C5 (relatively high pressure), and is therefore suitable for ensuring a stable low-pressure state in the second film-forming chamber C4 during the film-forming process.

In the optical film manufacturing method of the present invention, in the optical functional layer forming step described above, the optical functional layer 20 may be formed by another film forming method belonging to the dry coating method instead of the sputtering method. Examples of such other film forming methods include the vacuum deposition method and the CVD method. When the optical functional layer 20 is formed by another film forming method, the device X is provided with a specified film forming chamber capable of carrying out the other film forming method for the optical functional layer 20 instead of the first film forming chamber C1.

In the manufacturing method of the optical film of the present invention, in the above-mentioned antifouling layer forming step, the antifouling layer 30 may be formed by another film forming method belonging to the dry coating method instead of the vacuum deposition method. Examples of such other film forming methods include the sputtering method and the CVD method. When the antifouling layer 30 is formed by another film forming method, the device X is provided with a specified film forming chamber capable of carrying out the other film forming method of the antifouling layer 30 instead of the second film forming chamber C4.

The optical film F may be an optical film other than an anti-reflection film. Examples of such an optical film include a transparent conductive film and an electromagnetic wave shielding film.

When the optical film F is a transparent conductive film, the optical functional layer 20 of the optical film F includes, for example, a first dielectric thin film, a transparent electrode film such as an ITO film, and a second dielectric film, which are arranged in that order in the thickness direction. In the optical functional layer 20 having such a layered structure, both visible light transparency and conductivity are achieved.

When the optical film F is an electromagnetic wave shielding film, the optical functional layer 20 of the optical film F has, for example, a metal thin film having electromagnetic wave reflectivity and a metal oxide film alternately arranged in the thickness direction. In the optical functional layer 20 having such a layered structure, both the shielding property against electromagnetic waves of a specific wavelength and the visible light transmittance are achieved.

X Optical film S Substrate 10 Adhesion layer 20 Optical functional layer 21 First high refractive index layer 22 First low refractive index layer 23 Second high refractive index layer 24 Second low refractive index layer 30 Antifouling layer Y Apparatus R1 Feed-out chamber R2 Winding chamber C Process chamber C1 First film-forming chamber C1a First compartment C1b Second compartment C2 Connection chamber C3 Plasma treatment chamber C4 Second film-forming chamber C5 Inspection chamber 50 Plasma source 60 Cover housing 70 First exhaust port 303 Second exhaust port

Claims (15)

A method for manufacturing an optical film while transporting a workpiece film through a plurality of sequentially connected process chambers in a roll-to-roll manner, comprising:
the plurality of process chambers include a plasma processing chamber and a film formation chamber disposed downstream of the plasma processing chamber in the transport direction,
the plasma processing chamber includes a plasma source and at least one first exhaust port for exhausting air from within the chamber, the first exhaust port being disposed upstream of the plasma source in the direction of transport;
the deposition chamber has a second exhaust port for exhausting the interior of the chamber;
a plasma processing step of performing plasma processing on a workpiece film in the plasma processing chamber while exhausting the plasma processing chamber through the first exhaust port;
and a film formation process in which a film is formed on a work film in the film formation chamber by sputtering, CVD, or vacuum deposition while maintaining a pressure inside the film formation chamber at a lower pressure than the pressure inside the plasma treatment chamber during the plasma treatment process by evacuating the film formation chamber through the second exhaust port. the at least one first exhaust port includes two first exhaust ports opposed to each other in a direction perpendicular to the conveying direction,
The method for producing an optical film according to claim 1 , wherein in the plasma treatment step, the workpiece film is transported so as to pass between the two first exhaust ports. the plasma processing chamber comprises a cover housing surrounding the plasma source, the cover housing having an inlet opening and an outlet opening disposed downstream of the inlet opening in the direction of transport;
The method for manufacturing an optical film according to claim 1 or 2, wherein in the plasma treatment step, the workpiece film is transported so that the workpiece film passes through the cover housing from the entrance opening to the exit opening. The method for producing an optical film according to any one of claims 1 to 3, wherein the plasma treatment chamber and the film formation chamber are adjacent to each other. The method for manufacturing an optical film according to claim 4, wherein the workpiece film is transported from the plasma processing chamber to the film-forming chamber via a first airtight transport mechanism capable of transporting the workpiece film while maintaining airtightness between the plasma processing chamber and the film-forming chamber. the plurality of process chambers includes a post-process chamber disposed downstream of the film formation chamber in the transport direction and adjacent to the film formation chamber,
A post-process is performed on the workpiece film in the post-process chamber after the film-forming process,
The method for producing an optical film according to claim 1 , wherein the film formation step is carried out in the film formation chamber while maintaining a pressure inside the film formation chamber lower than a pressure inside the post-processing chamber during which the post-processing step is being carried out. The method for manufacturing an optical film according to claim 6, wherein the work film is transported from the film-forming chamber to the post-processing chamber via a second airtight transport mechanism capable of transporting the work film while maintaining airtightness between the film-forming chamber and the post-processing chamber. The method for producing an optical film according to claim 1 , wherein the film-forming step forms a film on the workpiece film by the vacuum deposition method in the film-forming chamber . An apparatus for manufacturing an optical film while transporting a work film by a roll-to-roll method,
The system includes a plurality of process chambers connected in series, at least one first exhaust pump, at least one second exhaust pump, and an airtight transfer mechanism;
The plurality of process chambers include a plasma processing chamber for performing plasma processing on the workpiece film, and a film formation chamber arranged downstream of the plasma processing chamber in the conveying direction, for forming a film on the workpiece film by a sputtering method, a CVD method, or a vacuum deposition method ;
the plasma processing chamber includes a plasma source and at least one first exhaust port for exhausting the chamber, the first exhaust port being disposed upstream of the plasma source in the direction of the transport and connected to the first exhaust pump;
the deposition chamber has a second exhaust port for exhausting air from the chamber, the second exhaust port being connected to the second exhaust pump. the at least one first exhaust port includes two first exhaust ports facing each other in a direction perpendicular to the conveying direction, each first exhaust port being connected to the first exhaust pump;
The optical film manufacturing apparatus according to claim 9 , wherein a workpiece film transport path in the plasma processing chamber extends between the two first exhaust ports. the plasma processing chamber comprises a cover housing surrounding the plasma source, the cover housing having an inlet opening and an outlet opening disposed downstream of the inlet opening in the direction of transport;
11. The optical film manufacturing apparatus according to claim 9, wherein a workpiece film transport path in the plasma processing chamber extends from the entrance opening to the exit opening so as to pass through the cover housing. The optical film manufacturing apparatus according to any one of claims 9 to 11, wherein the plasma processing chamber and the film forming chamber are adjacent to each other. The optical film manufacturing apparatus according to claim 12, further comprising a first airtight transport mechanism configured to transport the work film from the plasma processing chamber to the film formation chamber while maintaining airtightness between the plasma processing chamber and the film formation chamber. the plurality of process chambers further includes a post-process chamber disposed downstream of the film formation chamber in the transport direction and adjacent to the film formation chamber,
14. An optical film manufacturing apparatus as described in any one of claims 9 to 13, further comprising a second airtight transport mechanism configured to transport a work film from the film formation chamber to the post-processing chamber while maintaining airtightness between the film formation chamber and the post-processing chamber. 15. The optical film manufacturing apparatus according to claim 9, wherein the film forming chamber is a vacuum deposition chamber for forming a film on a workpiece film by a vacuum deposition method .

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