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JP7533285B2 - Inertial sensor and method for manufacturing the same - Google Patents
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JP7533285B2 - Inertial sensor and method for manufacturing the same - Google Patents

Inertial sensor and method for manufacturing the same Download PDF

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JP7533285B2
JP7533285B2 JP2021032561A JP2021032561A JP7533285B2 JP 7533285 B2 JP7533285 B2 JP 7533285B2 JP 2021032561 A JP2021032561 A JP 2021032561A JP 2021032561 A JP2021032561 A JP 2021032561A JP 7533285 B2 JP7533285 B2 JP 7533285B2
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vibrator
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peripheral frame
mounting substrate
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JP2022133714A (en
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照久 明石
優輝 稲垣
祐輔 川合
博文 船橋
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Denso Corp
Toyota Motor Corp
Mirise Technologies Corp
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Description

本発明は、微小振動体を備える慣性センサおよびその製造方法に関する。 The present invention relates to an inertial sensor equipped with a micro-vibrator and a manufacturing method thereof.

近年、車両の自動運転のシステム開発が進められており、この種のシステムでは、高精度の自己位置の推定技術が必要である。例えば、いわゆるレベル3の自動運転向けに、GNSS(Global Navigation Satellite Systemの略)とIMU(Inertial Measurement Unitの略)とを備える自己位置推定システムの開発が進められている。IMUは、例えば、3軸のジャイロセンサと3軸の加速度センサから構成される6軸の慣性力センサである。将来的に、いわゆるレベル4以上の自動運転を実現するためには、現状よりもさらに高感度のIMUが求められる。 In recent years, autonomous driving systems for vehicles have been developed, and this type of system requires highly accurate self-location estimation technology. For example, for so-called level 3 autonomous driving, a self-location estimation system equipped with a GNSS (short for Global Navigation Satellite System) and an IMU (short for Inertial Measurement Unit) is being developed. The IMU is, for example, a six-axis inertial force sensor consisting of a three-axis gyro sensor and a three-axis acceleration sensor. In order to realize so-called level 4 or higher autonomous driving in the future, an IMU with even higher sensitivity than the current level will be required.

このような高感度のIMUを実現するためのジャイロセンサとしては、BRG(Bird-bath Resonator Gyroscopeの略)が有力視されている。BRGは、ワイングラスモードで振動する三次元曲面を有する微小振動体が実装基板に搭載されてなる(例えば特許文献1)。この微小振動体は、振動の状態を表すQ値が10以上に達するため、従来よりも高感度が見込まれる。 BRG (Bird-bath Resonator Gyroscope) is considered to be a promising gyro sensor for realizing such a high-sensitivity IMU. BRG is configured by mounting a micro-vibrator having a three-dimensional curved surface that vibrates in wine glass mode on a mounting board (see, for example, Patent Document 1). This micro-vibrator has a Q value of 106 or more, which represents the state of vibration, and is therefore expected to have higher sensitivity than conventional ones.

米国特許出願公開第2019/0094024A1号明細書US Patent Application Publication No. 2019/0094024A1

この微小振動体は、例えば、数十μmの厚みの石英等で構成されるため、実装基板への搭載において傷を付けない取り扱いが求められる。微小振動体のベースとなる基材(例えば石英等)やその表面に形成される電極膜に傷が付いたり、電極膜が剥がれたりすると、Q値が低下し、ジャイロセンサの感度が低下してしまう。 This micro-vibrator is made of, for example, quartz or the like with a thickness of several tens of micrometers, so it must be handled carefully to avoid scratching it when mounting it on a mounting board. If the base material (e.g., quartz) that forms the base of the micro-vibrator or the electrode film formed on its surface is scratched or peeled off, the Q value decreases, and the sensitivity of the gyro sensor decreases.

特許文献1に記載のBRGは、実装基板の一部として微小振動体の位置決め用の可動治具が形成されており、微小振動体を実装基板に載置し、可動治具により微小振動体の位置調整を行った後に、微小振動体が接合部材で実装基板に接合されることで製造される。その後、実装基板のうち可動治具の部分は、エッチング等の処理により実装基板から解放され、除去される。 The BRG described in Patent Document 1 is manufactured by forming a movable jig for positioning the micro-vibrator as part of the mounting substrate, placing the micro-vibrator on the mounting substrate, adjusting the position of the micro-vibrator with the movable jig, and then bonding the micro-vibrator to the mounting substrate with a bonding member. The portion of the mounting substrate that is the movable jig is then released and removed from the mounting substrate by a process such as etching.

しかし、この手法は、実装基板における微小振動体の位置決め精度を確保できるものの、プロセスが多く、製造コストが増大するおそれがある。そのため、微小振動体を傷付けず、かつ実装基板に対する微小振動体の位置決めを簡便にすることが求められる。 Although this method can ensure the positioning accuracy of the micro-vibrator on the mounting board, it requires many processes and there is a risk of increasing manufacturing costs. Therefore, there is a need to simplify the positioning of the micro-vibrator on the mounting board without damaging the micro-vibrator.

また、上記のBRGでは、実装基板のうち枠体状の実装部分の内側に接合部材を配置し、接合部材を溶融させ、固化させることにより微小振動体が実装基板に接合される。このとき、溶融した接合部材により微小振動体が一時的に浮かんだ状態となって、微小振動体が傾くおそれがあるため、微小振動体の傾きを抑制する必要がある。しかし、特許文献1では、この微小振動体の接合時における傾き抑制については記載されていない。 In addition, in the above-mentioned BRG, a bonding material is placed inside the frame-shaped mounting portion of the mounting substrate, and the bonding material is melted and solidified to bond the micro-vibrator to the mounting substrate. At this time, the molten bonding material causes the micro-vibrator to temporarily float, which may cause the micro-vibrator to tilt, so it is necessary to suppress the tilt of the micro-vibrator. However, Patent Document 1 does not mention how to suppress the tilt of the micro-vibrator when it is bonded.

本発明は、上記の点に鑑み、この種の微小振動体を備える慣性センサにおいて、微小振動体を実装基板に搭載する際の微小振動体の位置決めの簡便化および接合部材による傾き抑制を両立することを目的とする。 In view of the above, the present invention aims to provide an inertial sensor equipped with this type of micro-vibrator that can simultaneously simplify the positioning of the micro-vibrator when mounting the micro-vibrator on a mounting substrate and suppress tilt caused by a bonding member.

上記目的を達成するため、請求項1に記載の慣性センサは、環状曲面を備える曲面部(21)および曲面部から凹んだ凹部(22)を有する微小振動体(2)と、微小振動体の凹部が嵌め込まれる枠体状の内周枠(511)と、内周枠を囲む枠体状の外周枠(512)と、互いに距離を隔てつつ、外周枠を囲む配置とされる複数の電極部(53)とを有してなる上部基板(5)が、下部基板(4)に接合されてなる実装基板(3)と、少なくとも一部が内周枠の内側に配置され、微小振動体と実装基板とを接合する接合部材(52)と、を備え、微小振動体は、曲面部が中空状態となっており、実装基板は、下部基板のうち少なくとも内周枠の内側の領域、または内周枠に設けられ、内周枠の内側に配置される接合部材の余剰部分が流れ込む逃げ溝(43、55、56)を有する。 In order to achieve the above object, the inertial sensor described in claim 1 includes a micro-vibrator (2) having a curved surface portion (21) with an annular curved surface and a recess (22) recessed from the curved surface portion, a frame-shaped inner peripheral frame (511) into which the recess of the micro-vibrator is fitted, a frame-shaped outer peripheral frame (512) surrounding the inner peripheral frame, and an upper substrate (5) having a plurality of electrode portions (53) arranged to surround the outer peripheral frame while being spaced apart from each other, and a mounting substrate (3) formed by joining the upper substrate (5) to a lower substrate (4), and a joining member (52) at least a part of which is arranged inside the inner peripheral frame and joins the micro-vibrator and the mounting substrate, the curved surface portion of the micro-vibrator being hollow, and the mounting substrate is provided at least in the region inside the inner peripheral frame of the lower substrate or in the inner peripheral frame, and has an escape groove (43, 55, 56) into which the excess part of the joining member arranged inside the inner peripheral frame flows.

これによれば、微小振動体の凹部が嵌め込まれる枠体状の内周枠、およびこれを囲む外周枠を有する上部基板と下部基板とが接合されてなる実装基板の内周枠に、曲面部および凹部を有する微小振動体の凹部が嵌め込まれてなる慣性センサとなる。この慣性センサは、微小振動体が嵌め込まれる内周枠を有することで、実装基板に対する微小振動体の位置決め精度が所定以上となると共に、位置決め工程が簡便化されつつ、位置決め後の微小振動体の位置ズレが抑制される構造となっている。 This results in an inertial sensor in which the recess of the micro-vibrator, which has a curved surface and a recess, is fitted into the inner peripheral frame of a mounting substrate formed by joining an upper substrate and a lower substrate having an outer peripheral frame surrounding the frame-shaped inner peripheral frame into which the recess of the micro-vibrator is fitted, and the inner peripheral frame of the mounting substrate is formed by joining the upper substrate and the lower substrate having an outer peripheral frame surrounding the frame. By having an inner peripheral frame into which the micro-vibrator is fitted, this inertial sensor has a structure in which the positioning accuracy of the micro-vibrator relative to the mounting substrate is equal to or higher than a predetermined level, the positioning process is simplified, and positional deviation of the micro-vibrator after positioning is suppressed.

また、慣性センサは、実装基板のうち下部基板または内周枠に逃げ溝を有することで、実装基板のうち内周枠の内側領域に接合部材を配置し、微小振動体を接合するに際して、溶融した接合部材の余剰部分が逃げ溝に流れ込む構造となっている。そのため、微小振動体の凹部と実装基板の接合面との間に必要以上の接合部材が介在することが抑止され、微小振動体が傾くことが抑制された慣性センサとなる。 The inertial sensor also has an escape groove in the lower substrate or inner frame of the mounting substrate, so that the bonding material is placed in the inner region of the inner frame of the mounting substrate, and when the micro-vibrator is bonded, the excess of the molten bonding material flows into the escape groove. This prevents more bonding material than necessary from being interposed between the recess of the micro-vibrator and the bonding surface of the mounting substrate, resulting in an inertial sensor in which tilting of the micro-vibrator is suppressed.

したがって、この慣性センサは、微小振動体の位置決めが簡便かつ高精度でなされ、面内方向での微小振動体の位置ズレが抑制されつつ、接合時における微小振動体の傾きが抑制された構造となる。 Therefore, this inertial sensor has a structure in which the positioning of the micro-vibrator can be performed easily and with high accuracy, and the positional deviation of the micro-vibrator in the in-plane direction is suppressed, while the tilt of the micro-vibrator during bonding is suppressed.

請求項9に記載の慣性センサの製造方法は、環状曲面を備える曲面部(21)および曲面部から凹んだ凹部(22)を有する微小振動体(2)と、下部基板(4)と、微小振動体の凹部が嵌め込まれる枠体状の内周枠(511)を有し、下部基板に接合される上部基板(5)と、によりなり、接合部材(52)を介して内周枠の内側領域に微小振動体の凹部が接合される実装基板(3)と、を備え、微小振動体が内周枠に搭載されたとき、曲面部が中空状態となる慣性センサ(1)の製造方法である。そして、微小振動体を用意することと、実装基板を用意することと、実装基板のうち内周枠の内側領域に接合部材を配置することと、接合部材を配置した後、内周枠の内側領域に、微小振動体のうち凹部を嵌め込み、接合部材と微小振動体の凹部とを接触させることと、実装基板を加熱して接合部材を溶融させ、固化させることで、微小振動体を実装基板に接合することと、を含む。実装基板を用意することにおいては、内周枠を囲む枠体状の外周枠(512)と、互いに距離を隔てつつ、外周枠を囲む配置とされる複数の電極部(53)と、下部基板のうち少なくとも内周枠の内側領域または内周枠に設けられる逃げ溝(43、55、56)と、を有する実装基板を用意する。微小振動体を接合することにおいては、微小振動体の凹部を下部基板の側に押圧し、溶融した接合部材のうち余剰部分を逃げ溝に押し出す。 The manufacturing method of the inertial sensor according to claim 9 is a manufacturing method of an inertial sensor (1) including a micro-vibrator (2) having a curved surface portion (21) with an annular curved surface and a recessed portion (22) recessed from the curved surface portion, a lower substrate (4), and an upper substrate (5) having a frame-shaped inner peripheral frame (511) into which the recessed portion of the micro-vibrator is fitted and joined to the lower substrate, and a mounting substrate (3) to which the recessed portion of the micro-vibrator is joined to the inner region of the inner peripheral frame via a joining member (52), in which the curved surface portion becomes hollow when the micro-vibrator is mounted on the inner peripheral frame. The manufacturing method includes preparing a micro-vibrator, preparing a mounting substrate, arranging a joining member in the inner region of the inner peripheral frame of the mounting substrate, fitting the recessed portion of the micro-vibrator into the inner region of the inner peripheral frame after arranging the joining member, bringing the joining member into contact with the recessed portion of the micro-vibrator, and heating the mounting substrate to melt and solidify the joining member, thereby joining the micro-vibrator to the mounting substrate. In preparing the mounting substrate, a mounting substrate is prepared that has a frame-shaped outer peripheral frame (512) that surrounds the inner peripheral frame, a plurality of electrode portions (53) that are arranged to surround the outer peripheral frame while being spaced apart from each other, and an escape groove (43, 55, 56) that is provided at least in the inner region of the inner peripheral frame or in the inner peripheral frame of the lower substrate. In bonding the micro-vibrator, the recess of the micro-vibrator is pressed against the lower substrate, and the excess portion of the molten bonding material is pushed out into the escape groove.

これによれば、微小振動体の凹部が嵌め込まれる枠体状の内周枠、およびこれを囲む外周枠を有する上部基板と下部基板とが接合され、下部基板のうち少なくとも内周枠の内側領域、または内周枠に逃げ溝が形成された実装基板を用いる。そして、当該実装基板のうち内周枠の内側領域に接合部材を配置した後に、内周枠に微小振動体を嵌め込み、接合部材を溶融・固化させて、微小振動体を接合する。このとき、溶融した接合部材の余剰部分を実装基板の逃げ溝に押し出し、微小振動体と実装基板とが接合された慣性センサを製造する。 According to this method, an upper substrate and a lower substrate are joined together, and the upper substrate has an inner peripheral frame surrounding the inner peripheral frame into which the recess of the micro-vibrator is fitted, and a mounting substrate is used in which at least the inner region of the inner peripheral frame of the lower substrate, or an escape groove is formed in the inner peripheral frame. Then, after a bonding material is placed in the inner region of the inner peripheral frame of the mounting substrate, the micro-vibrator is fitted into the inner peripheral frame, and the bonding material is melted and solidified to bond the micro-vibrator. At this time, an excess portion of the molten bonding material is pushed out into the escape groove of the mounting substrate, and an inertial sensor in which the micro-vibrator and the mounting substrate are bonded is manufactured.

微小振動体の凹部を実装基板の内周枠に嵌め込むことで、実装基板に対する微小振動体の位置決めを簡素化することができる。また、微小振動体の接合時に、接合部材の余剰部分を実装基板の逃げ溝に逃がすことで、微小振動体の凹部と実装基板の実装面との間に必要以上の接合部材が介在することを抑止し、微小振動体の傾きを抑制することができる。 By fitting the recess of the micro-vibrator into the inner frame of the mounting board, it is possible to simplify the positioning of the micro-vibrator relative to the mounting board. In addition, by allowing the excess part of the bonding material to escape into the escape groove of the mounting board when bonding the micro-vibrator, it is possible to prevent more bonding material than necessary from being interposed between the recess of the micro-vibrator and the mounting surface of the mounting board, and to suppress tilting of the micro-vibrator.

したがって、慣性センサの製造において、微小振動体の位置決めの簡便化および接合部材による微小振動体の傾きを両立することができる。 Therefore, in the manufacture of inertial sensors, it is possible to simplify the positioning of the micro-vibrator while also controlling the inclination of the micro-vibrator using the joining member.

なお、各構成要素等に付された括弧付きの参照符号は、その構成要素等と後述する実施形態に記載の具体的な構成要素等との対応関係の一例を示すものである。 The reference symbols in parentheses attached to each component indicate an example of the correspondence between the component and the specific components described in the embodiments described below.

第1実施形態に係る慣性センサを示す上面レイアウト図である。FIG. 2 is a top view showing the layout of the inertial sensor according to the first embodiment. 微小振動体の一例を示す斜視図である。FIG. 2 is a perspective view showing an example of a micro-vibrator. 図2のIII-III間の断面を示す断面図である。3 is a cross-sectional view showing a cross section taken along line III-III in FIG. 2. 微小振動体の形成工程のうち部材の用意工程を示す図である。11A to 11C are diagrams showing a process of preparing a member in a process of forming a micro-vibrator. 図4Aに続く工程を示す図である。FIG. 4B is a diagram showing a process following FIG. 4A. 図4Bに続く工程を示す図である。FIG. 4C is a diagram showing a process following FIG. 4B. 図1のV-V間の断面を示す断面図である。2 is a cross-sectional view showing a cross section taken along line V-V in FIG. 1. 図1のVI-VI間の断面を示す断面図である。2 is a cross-sectional view showing a cross section taken along line VI-VI in FIG. 1. 微小振動体が搭載される前の実装基板を示す上面レイアウト図である。FIG. 2 is a top view of the layout showing a mounting board before a microvibrator is mounted. 図7のVIII-VIII間の断面を示す断面図である。8 is a cross-sectional view showing a cross section taken along line VIII-VIII in FIG. 7. 図7のIX-IX間の断面を示す断面図である。9 is a cross-sectional view showing a cross section taken along line IX-IX in FIG. 7. 図7のX-X間の断面を示す断面図である。8 is a cross-sectional view showing a cross section taken along line XX in FIG. 7. 慣性センサの製造における微小振動体の搭載工程を示す図であって、部材の用意工程を示す図である。10A to 10C are diagrams showing a step of mounting a micro-vibrator in the manufacture of an inertial sensor, and are diagrams showing a step of preparing a member. 図11Aに続く工程を示す図である。FIG. 11B is a diagram showing a process following FIG. 11A. 図11Bに続く工程を示す図である。FIG. 11B shows a step following FIG. 図11Cに続く工程を示す図である。FIG. 11D is a diagram showing a process following FIG. 図11Dに続く工程を示す図である。FIG. 11D shows a step following FIG. 図11Eに続く工程を示す図である。FIG. 11B is a diagram showing a process following FIG. 11E. 比較例の実装基板に微小振動体を接合する様子を示す図である。11A and 11B are diagrams showing how a micro-vibrator is bonded to a mounting substrate of a comparative example. 図12Aに続く工程を示す図であって、接合時における微小振動体の傾き発生を説明するための説明図である。FIG. 12B is a diagram showing a step subsequent to FIG. 12A, and is an explanatory diagram for explaining the occurrence of tilt of the micro-vibrator during bonding. 第2実施形態の慣性センサに係る実装基板を示す上面レイアウト図である。FIG. 11 is a top view showing a layout of a mounting board for the inertial sensor according to the second embodiment. 図13のXIV-XIV間の断面を示す断面図である。14 is a cross-sectional view showing a cross section taken along line XIV-XIV in FIG. 13. 図13のXV-XV間の断面を示す断面図である。14 is a cross-sectional view showing a cross section taken along line XV-XV in FIG. 13. 第2実施形態の慣性センサを示す断面図である。FIG. 11 is a cross-sectional view showing an inertial sensor according to a second embodiment. 第3実施形態の慣性センサに係る実装基板を示す上面レイアウト図である。FIG. 11 is a top view showing a layout of a mounting board for the inertial sensor according to the third embodiment. 図17のXVIII-XVIII間の断面を示す断面図である。18 is a cross-sectional view showing a cross section taken along line XVIII-XVIII in FIG. 17. 第3実施形態の慣性センサを示す断面図である。FIG. 11 is a cross-sectional view showing an inertial sensor according to a third embodiment. 第3実施形態の慣性センサに係る実装基板の変形例を示す上面レイアウト図である。FIG. 13 is a top view layout diagram showing a modified example of the mounting board for the inertial sensor according to the third embodiment. 図20のXXI-XXI間の断面を示す断面図である。21 is a cross-sectional view showing a cross section taken along line XXI-XXI in FIG. 20. 第3実施形態の慣性センサの変形例を示す断面図である。FIG. 13 is a cross-sectional view showing a modified example of the inertial sensor of the third embodiment. 第4実施形態の慣性センサに係る実装基板を示す上面レイアウト図である。FIG. 13 is a top view showing a layout of a mounting board for the inertial sensor according to the fourth embodiment. 図23のXXIV-XXIV間の断面を示す断面図である。24 is a cross-sectional view showing a cross section taken along line XXIV-XXIV in FIG. 23. 第4実施形態の慣性センサを示す断面図である。FIG. 13 is a cross-sectional view showing an inertial sensor according to a fourth embodiment. 第5実施形態の慣性センサに係る実装基板を示す上面レイアウト図である。FIG. 13 is a top layout diagram showing a mounting board for the inertial sensor according to the fifth embodiment. 図26のXXVII-XXVII間の断面を示す断面図である。27 is a cross-sectional view showing a cross section taken along line XXVII-XXVII in FIG. 26. 図26のXXVIII-XXVIII間の断面を示す断面図である。27 is a cross-sectional view showing a section taken along line XXVIII-XXVIII in FIG. 26.

以下、本発明の実施形態について図に基づいて説明する。なお、以下の各実施形態相互において、互いに同一もしくは均等である部分には、同一符号を付して説明を行う。 The following describes embodiments of the present invention with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other are denoted by the same reference numerals.

(第1実施形態)
第1実施形態の慣性センサ1について、図1~図10を参照して説明する。
First Embodiment
An inertial sensor 1 according to a first embodiment will be described with reference to FIGS.

図2では、後述する微小振動体2の構成を分かり易くするため、微小振動体2の外郭のうち図2に示す角度から見えない部分については破線で示している。図5、図6では、見易くするため、微小振動体2のうち図2に示す後述の導電層23を省略している。見易くするための導電層23の省略については、図11A以降の図についても同様である。 In FIG. 2, in order to make it easier to understand the configuration of the micro-vibrator 2, which will be described later, the outer periphery of the micro-vibrator 2 that cannot be seen from the angle shown in FIG. 2 is shown with dashed lines. In FIG. 5 and FIG. 6, in order to make it easier to see, the conductive layer 23 shown in FIG. 2, which will be described later, is omitted from the micro-vibrator 2. The omission of the conductive layer 23 to make it easier to see also applies to FIG. 11A and subsequent figures.

以下、説明の便宜上、図1に示すように、紙面における左右方向に沿った方向を「x方向」と、同紙面上においてx方向に直交する方向を「y方向」と、xy平面に対する法線方向を「z方向」と、それぞれ称する。図3以降の図中のx、y、z方向は、図1のx、y、z方向にそれぞれ対応するものである。また、本明細書における「上」とは、図中のz方向に沿った方向であって、矢印側を意味し、「下」とは上の反対側を意味する。さらに、本明細書では、例えば図1等に示すように、z方向上側から慣性センサ1または実装基板3を見た状態を「上面視」と称することがある。 For ease of explanation, the direction along the left-right direction on the paper as shown in FIG. 1 will be referred to as the "x-direction", the direction perpendicular to the x-direction on the paper as the "y-direction", and the normal direction to the xy plane as the "z-direction". The x, y, and z directions in FIG. 3 and subsequent figures correspond to the x, y, and z directions in FIG. 1, respectively. In addition, in this specification, "up" refers to the direction along the z-direction in the figure, and refers to the side indicated by the arrow, and "down" refers to the opposite side to the top. Furthermore, in this specification, the state in which the inertial sensor 1 or the mounting board 3 is viewed from above in the z direction, as shown in FIG. 1, for example, may be referred to as "top view".

〔基本構成〕
慣性センサ1は、例えば、図1に示すように、微小振動体2と、実装基板3とを備え、微小振動体2の一部が実装基板3に接合されてなる。慣性センサ1は、ワイングラスモードで振動することが可能な微小振動体2と実装基板3のうち後述する複数の電極部53との間における静電容量の変化に基づき、慣性センサ1に印加された角速度を検出する構成となっている。慣性センサ1は、例えば、BRG構造のジャイロセンサであって、自動車等の車両に搭載される用途に適用されると好適であるが、勿論、他の用途にも適用されうる。
[Basic configuration]
1, the inertial sensor 1 includes a micro-vibrator 2 and a mounting substrate 3, with a portion of the micro-vibrator 2 bonded to the mounting substrate 3. The inertial sensor 1 is configured to detect an angular velocity applied to the inertial sensor 1 based on a change in capacitance between the micro-vibrator 2 capable of vibrating in a wine glass mode and a plurality of electrode portions 53 (described later) of the mounting substrate 3. The inertial sensor 1 is, for example, a gyro sensor with a BRG structure, and is suitable for use in applications in which it is mounted on a vehicle such as an automobile, but can of course also be used for other applications.

微小振動体2は、例えば、図2に示すように、略半球形の三次元曲面の外形を有する曲面部21と、環状曲面形状の曲面部21の頂点側から半球の中心側に向かうように凹んだ凹部22とを備える。微小振動体2は、例えば図3に示すように、凹部22のうち外側の面が実装基板3に接続される際の吸着搬送に用いられる吸着面22aであり、凹部22のうち吸着面22aとは反対側が実装基板3に接続される実装面22bである。微小振動体2は、実装面22bの径が実装基板3のうち後述する枠体状の内周枠511の内側領域の径に対応する径とされており、実装基板3への搭載時に内周枠511に嵌合する寸法となっている。微小振動体2は、例えば、慣性センサ1が駆動していない状態においてリム211と複数の電極部53との間隔が等間隔となるように、リム211が略円筒形状とされる。微小振動体2は、曲面部21が椀状の三次元曲面を有し、その振動のQ値が例えば10以上となっている。 As shown in FIG. 2, the micro-vibrator 2 includes a curved surface portion 21 having an outer shape of a three-dimensional curved surface of a substantially hemisphere, and a recessed portion 22 recessed from the apex side of the curved surface portion 21 having a ring-shaped curved surface toward the center side of the hemisphere. As shown in FIG. 3, the micro-vibrator 2 includes an outer surface of the recessed portion 22 that is an adsorption surface 22a used for adsorption and transport when connected to the mounting substrate 3, and an opposite side of the recessed portion 22 to the adsorption surface 22a that is a mounting surface 22b that is connected to the mounting substrate 3. The diameter of the mounting surface 22b of the micro-vibrator 2 corresponds to the diameter of the inner region of a frame-shaped inner peripheral frame 511 of the mounting substrate 3, which will be described later, and is sized to fit into the inner peripheral frame 511 when mounted on the mounting substrate 3. The micro-vibrator 2 includes a rim 211 that is substantially cylindrical so that the rim 211 and the plurality of electrode portions 53 are equally spaced from each other when the inertial sensor 1 is not driven. The micro-vibration body 2 has a curved surface portion 21 that has a three-dimensional, bowl-shaped curved surface, and the Q value of the vibration is, for example, 10 6 or more.

微小振動体2は、例えば、石英、ガラス、シリコンやセラミック等の材料で構成されるが、三次元曲面形状とされた曲面部21および凹部22を形成でき、ワイングラスモードで振動することが可能なものであればよく、これらの材料に限定されない。微小振動体2は、例えば、その厚みが20μm~80μmといった具合の数十μmの薄肉構成となっている。微小振動体2は、例えば、実装基板3の厚み方向に沿った方向を高さ方向として、高さ方向の寸法が2.5mm、その径が5mmといったミリサイズの形状である。微小振動体2は、その表面が導電層23で覆われている。導電層23は、例えば、限定するものではないが、下地側からCr(クロム)あるいはTi(チタン)と、Au(金)やPt(白金)等の任意の導電性材料との積層膜で構成され、電極膜として機能する。 The micro-vibrator 2 is made of materials such as quartz, glass, silicon, and ceramics, but is not limited to these materials as long as it can form the curved surface portion 21 and the recessed portion 22 in a three-dimensional curved shape and can vibrate in wine glass mode. The micro-vibrator 2 is thin-walled with a thickness of several tens of μm, such as 20 μm to 80 μm. The micro-vibrator 2 has a millimeter-sized shape with a height dimension of 2.5 mm and a diameter of 5 mm, with the height direction being along the thickness direction of the mounting substrate 3. The surface of the micro-vibrator 2 is covered with a conductive layer 23. The conductive layer 23 is made of a laminated film of Cr (chromium) or Ti (titanium) and any conductive material such as Au (gold) or Pt (platinum) from the base side, but is not limited to this, and functions as an electrode film.

微小振動体2は、例えば、次のような工程により形成される。 The micro-vibration body 2 is formed, for example, by the following process.

まず、例えば図4Aに示すように、石英板20、三次元曲面形状を形成するための型Mおよび型Mを冷却するための冷却体Cを用意する。型Mは、例えば、石英板20に三次元曲面形状を形成する際のスペースとなる凹部M1と、凹部M1の中心において、凹部M1の深さ方向に沿って延設され、加工時に石英板20の一部を支える支柱部M2とを備え、凹部M1の底面に貫通孔M11が形成されている。冷却体Cは、型Mが嵌め込まれる嵌め込み部C1と、嵌め込み部C1の底面に排気用の排気口C11とを備え、石英板20を加工する際に型Mを冷却する役割を果たす。石英板20は、型Mの凹部M1の全域を覆うように配置される。 First, as shown in FIG. 4A, for example, a quartz plate 20, a mold M for forming a three-dimensional curved shape, and a cooling body C for cooling the mold M are prepared. The mold M includes, for example, a recess M1 that serves as a space when forming a three-dimensional curved shape on the quartz plate 20, and a support part M2 that extends in the depth direction of the recess M1 at the center of the recess M1 and supports a part of the quartz plate 20 during processing, and a through hole M11 is formed on the bottom surface of the recess M1. The cooling body C includes an insertion part C1 into which the mold M is inserted, and an exhaust port C11 for exhaust on the bottom surface of the insertion part C1, and serves to cool the mold M when the quartz plate 20 is processed. The quartz plate 20 is arranged to cover the entire recess M1 of the mold M.

続けて、例えば図4Bに示すように、石英板20に向けてトーチTから火炎Fを吹きかけ、石英板20を溶融させる。このとき、型Mの凹部M1は、図示しない真空機構により冷却体Cの排気口C11を通じて真空引きされている。これにより、石英板20のうち溶融した部分は、凹部M1の底面に向かって引き延ばされると共に、その中心周辺領域が支柱部M2により支えられた状態となる。その後、石英板20の加熱をやめて冷却することで、石英板20は、略半球形の三次元曲面形状とされた曲面部位201と、曲面部位201の中心近傍で凹んだ凹部位202と、曲面部位201の外周端に位置し、平坦形状とされた端部203とを有する形状となる。 Next, as shown in FIG. 4B, for example, a flame F is blown from a torch T toward the quartz plate 20 to melt the quartz plate 20. At this time, the recess M1 of the mold M is evacuated through the exhaust port C11 of the cooling body C by a vacuum mechanism (not shown). As a result, the molten part of the quartz plate 20 is stretched toward the bottom surface of the recess M1, and its central peripheral area is supported by the support part M2. After that, by stopping the heating of the quartz plate 20 and cooling it, the quartz plate 20 has a shape having a curved surface part 201 having a three-dimensional curved shape of an approximately hemisphere, a recessed part 202 recessed near the center of the curved surface part 201, and a flat end part 203 located at the outer peripheral end of the curved surface part 201.

次いで、型Mの凹部M1を常圧に戻し、加工後の石英板20を取り外し、例えば図4Cに示すように、任意の硬化性樹脂材料によりなる封止材Eで石英板20を封止する。その後、例えば、封止材Eを端部203側の面から研磨およびCMP(Chemical Mechanical Polishingの略)を行い、封止材Eごと端部203を除去し、凹部位202を残す。そして、加熱や薬液を用いた溶解等の任意の方法により、封止材Eをすべて除去し、石英板20を取り出す。最後に、例えば、スパッタリング、蒸着、原子層堆積(ALD)や化学蒸着(CVD)等の任意の成膜プロセスにより、上記の加工後の石英板20の両面に導電層23を形成する。 Then, the depression M1 of the mold M is returned to normal pressure, the processed quartz plate 20 is removed, and the quartz plate 20 is sealed with a sealing material E made of any curable resin material, as shown in FIG. 4C. Then, for example, the sealing material E is polished and CMP (short for chemical mechanical polishing) is performed from the surface on the end 203 side to remove the end 203 together with the sealing material E, leaving the recessed portion 202. Then, all of the sealing material E is removed by any method such as heating or dissolving using a chemical solution, and the quartz plate 20 is taken out. Finally, a conductive layer 23 is formed on both sides of the processed quartz plate 20 by any film formation process such as sputtering, vapor deposition, atomic layer deposition (ALD), or chemical vapor deposition (CVD).

なお、微小振動体2は、例えば、上記のような製造プロセスにより製造され、Z方向を回転軸として回転対称な略ハーフトロイダル形状とされるが、上記の方法に限定されるものではなく、他の公知の方法が採用されても構わない。また、微小振動体2は、ワイングラスモードで振動可能な形状であればよく、BRの形状に限定されるものではない。 The micro-vibration body 2 is manufactured, for example, by the manufacturing process described above, and has a roughly half-toroidal shape that is rotationally symmetric with the Z direction as the axis of rotation, but is not limited to the above method, and other known methods may be used. Furthermore, the micro-vibration body 2 may have any shape that allows it to vibrate in wine glass mode, and is not limited to the BR shape.

微小振動体2は、例えば、図5や図6に示すように、凹部22の実装面22b側が実装基板3に接合されたとき、リム211を含む三次元曲面形状の部分が中空の状態となり、ワイングラスモードで振動することが可能となっている。微小振動体2は、例えば図6に示すように、実装基板3に接合されたとき、中空状態のリム211が実装基板3のうち複数の電極部53と距離を隔てて配置される。 When the mounting surface 22b side of the recess 22 of the micro-vibrator 2 is bonded to the mounting substrate 3, as shown in Figs. 5 and 6, for example, the three-dimensional curved surface including the rim 211 becomes hollow, and the micro-vibrator 2 is capable of vibrating in wine glass mode. When the micro-vibrator 2 is bonded to the mounting substrate 3, as shown in Fig. 6, for example, the hollow rim 211 is positioned at a distance from the multiple electrode portions 53 of the mounting substrate 3.

微小振動体2は、例えば、凹部22が図7等に示す実装基板3のうち後述する内周枠511に嵌め込まれることで、所定以上の位置合わせ精度で実装基板3に搭載されると共に、面内方向、すなわちxy平面方向における実装基板3との位置のズレが抑制される。この詳細については後述する。 The micro-vibrator 2 is mounted on the mounting substrate 3 with a predetermined degree of alignment accuracy or higher by, for example, fitting the recess 22 into the inner peripheral frame 511 (described later) of the mounting substrate 3 shown in FIG. 7, etc., and positional deviation from the mounting substrate 3 in the in-plane direction, i.e., the xy plane direction, is suppressed. Details of this will be described later.

実装基板3は、例えば図7に示すように、下部基板4と、上部基板5とを備え、これらが接合された構成となっている。例えば、実装基板3は、絶縁材料のホウケイ酸ガラスにより構成された下部基板4に、半導体材料のSi(シリコン)により構成された上部基板5を陽極接合することで得られる。実装基板3は、微小振動体2が搭載される実装部51と、実装部51を囲むように互いに離隔して配置された複数の電極部53と、電極部53を囲む配置とされた枠体状の外枠部54とを備える。 As shown in FIG. 7, the mounting substrate 3 is configured by bonding a lower substrate 4 and an upper substrate 5 together. For example, the mounting substrate 3 is obtained by anodically bonding the upper substrate 5 made of a semiconductor material, Si (silicon), to the lower substrate 4 made of an insulating material, borosilicate glass. The mounting substrate 3 is configured with a mounting section 51 on which the micro-vibrator 2 is mounted, a plurality of electrode sections 53 arranged at a distance from each other so as to surround the mounting section 51, and a frame-shaped outer frame section 54 arranged to surround the electrode sections 53.

実装部51は、例えば図5に示すように、微小振動体2の凹部22が嵌め込まれる枠体形状の内周枠511と、内周枠511を囲む枠体形状の外周枠512とにより構成されている。内周枠511および外周枠512は、例えば図7に示すように、上面視にて、円環形状とされるが、枠体形状であればよく、この形状に限定されない。内周枠511は、その内周側が微小振動体2の凹部22の外形寸法に応じた寸法とされ、例えば、微小振動体2の凹部22が嵌め込まれたときのクリアランスが5μm~10μm程度となる寸法とされる。なお、実装部51は、実装基板3に対する微小振動体2が接合部材52により固定される部位であると共に、微小振動体2の位置決めに用いられる部位でもあるため、微小振動体2程の位置決め固定部としての役割を果たす。 The mounting section 51 is composed of an inner frame 511 in the shape of a frame into which the recess 22 of the micro-vibrator 2 is fitted, and an outer frame 512 in the shape of a frame surrounding the inner frame 511, as shown in FIG. 5, for example. The inner frame 511 and the outer frame 512 are annular in top view, as shown in FIG. 7, for example, but are not limited to this shape as long as they are in the shape of a frame. The inner frame 511 has a size corresponding to the outer dimensions of the recess 22 of the micro-vibrator 2 on its inner side, and is, for example, a size that provides a clearance of about 5 μm to 10 μm when the recess 22 of the micro-vibrator 2 is fitted. The mounting section 51 is a portion where the micro-vibrator 2 is fixed to the mounting substrate 3 by the bonding member 52, and is also a portion used for positioning the micro-vibrator 2, so it serves as a positioning and fixing portion of about the size of the micro-vibrator 2.

実装基板3は、例えば図7に示すように、上面視にて、円環形状の外周枠512よりも外周側の位置に、実装部51を囲む環状のエッチング溝41が形成されている。これにより、微小振動体2が実装基板3に搭載されたとき、図5や図6に示すように、微小振動体2のリム211を含む曲面部21が他の部位に接触しない中空状態となる。実装基板3は、下部基板4のエッチング溝41を跨ぐブリッジ配線42を備え、実装部51と外枠部54とが電気的に接続され、同電位となっている。ブリッジ配線42は、例えばAl(アルミニウム)等の導電性材料により構成されると共に、複数の電極部53の間を通過する配置とされ、複数の電極部53とは電気的に独立している。 As shown in FIG. 7, the mounting substrate 3 has an annular etching groove 41 surrounding the mounting portion 51 at a position on the outer periphery side of the annular outer peripheral frame 512 when viewed from above. As a result, when the micro-vibrator 2 is mounted on the mounting substrate 3, as shown in FIG. 5 and FIG. 6, the curved surface portion 21 including the rim 211 of the micro-vibrator 2 is in a hollow state where it does not contact other parts. The mounting substrate 3 has a bridge wiring 42 that straddles the etching groove 41 of the lower substrate 4, and the mounting portion 51 and the outer frame portion 54 are electrically connected and at the same potential. The bridge wiring 42 is made of a conductive material such as Al (aluminum) and is arranged to pass between the multiple electrode portions 53 and is electrically independent from the multiple electrode portions 53.

例えば、実装基板3は、図5や図6に示すように、環状の内周枠511の内側領域がAuSn(金錫)等を主成分とする接合部材52が配置される領域となっており、接合部材52を介して微小振動体2が接合される。また、実装基板3は、例えば図8に示すように、ブリッジ配線42の一端が内周枠511により、他端が外枠部54により、一端と他端との途中部分が外周枠512により、それぞれ覆われている。これにより、実装基板3は、微小振動体2が搭載されたとき、内周枠511、外周枠512、ブリッジ配線42および外枠部54が微小振動体2と電気的に接続された状態となる。 For example, as shown in Figs. 5 and 6, the mounting substrate 3 has an inner region of an annular inner frame 511 where a bonding member 52 mainly composed of AuSn (gold tin) or the like is disposed, and the micro-vibrator 2 is bonded via the bonding member 52. As shown in Fig. 8, the mounting substrate 3 has one end of the bridge wiring 42 covered by the inner frame 511, the other end by the outer frame 54, and the intermediate portion between the one end and the other end by the outer frame 512. As a result, when the micro-vibrator 2 is mounted on the mounting substrate 3, the inner frame 511, the outer frame 512, the bridge wiring 42, and the outer frame 54 are electrically connected to the micro-vibrator 2.

実装基板3は、例えば図7に示すように、下部基板4のうち外周枠512よりも内側に位置する領域内に、複数の逃げ溝43が形成されている。実装基板3は、例えば図9に示すように、内周枠511で囲まれた領域(以下「内側領域」という)と、内周枠511と外周枠512との間の領域(以下「外側領域」という)とが下部基板4に設けられた逃げ溝43により連通している。逃げ溝43は、内側領域と外側領域とを繋ぐ溝であり、図6に示すように、内周枠511の内側に配置される接合部材52の余剰部分を内側領域から外側領域に誘導し、微小振動体2が接合時に傾くことを抑制するために設けられる。この詳細については、後述する慣性センサ1の製造方法において説明する。 As shown in FIG. 7, for example, the mounting substrate 3 has a plurality of clearance grooves 43 formed in an area located inside the outer peripheral frame 512 of the lower substrate 4. As shown in FIG. 9, for example, the mounting substrate 3 has an area surrounded by the inner peripheral frame 511 (hereinafter referred to as the "inner area") and an area between the inner peripheral frame 511 and the outer peripheral frame 512 (hereinafter referred to as the "outer area") communicated by the clearance grooves 43 provided in the lower substrate 4. The clearance grooves 43 are grooves that connect the inner area and the outer area, and are provided to guide the excess portion of the joining member 52 arranged inside the inner peripheral frame 511 from the inner area to the outer area as shown in FIG. 6, and to suppress the micro-vibration body 2 from tilting during joining. Details of this will be described in the manufacturing method of the inertial sensor 1 described later.

なお、複数の逃げ溝43は、微小振動体2の接合時において、溶融した接合部材52の余剰部分の流れに偏りが生じないようにする観点から、例えば図7に示すように、上面視にて対称配置されることが好ましいが、これに限定されるものではない。また、逃げ溝43の数、深さや寸法等についても、微小振動体2や内周枠511等の寸法等に応じて、適宜変更されうる。下部基板4のうち逃げ溝43が設けられていない部分については、図10に示すように、内周枠511により内側領域と外側領域とが区画されている。 In order to prevent uneven flow of the excess molten joining material 52 when joining the micro-vibration body 2, it is preferable that the multiple escape grooves 43 are arranged symmetrically when viewed from above, as shown in FIG. 7, for example, but this is not limited to this. The number, depth, dimensions, etc. of the escape grooves 43 can also be changed as appropriate depending on the dimensions of the micro-vibration body 2 and the inner frame 511, etc. In the portion of the lower substrate 4 where the escape grooves 43 are not provided, an inner region and an outer region are partitioned by the inner frame 511, as shown in FIG. 10.

実装基板3は、例えば図1や図6に示すように、エッチング溝41の外周側の位置において、実装部51を囲むように互いに離れて配置された複数の電極部53を備える。複数の電極部53は、微小振動体2が搭載されたとき、微小振動体2のリム211と所定の距離を隔てた状態となり、それぞれが微小振動体2とキャパシタを形成する。複数の電極部53は、上面に電極膜531が形成されると共に、例えば、電極膜531に図示しないワイヤが接続され、図示しない外部の回路基板等と電気的に接続される。これにより、実装基板3は、複数の電極部53を介して、微小振動体2との間の静電容量を検出したり、微小振動体2との間に静電引力を生じさせ、微小振動体2をワイングラスモードで振動させたりすることが可能となっている。複数の電極部53は、例えば図1に示すように、上面視にて、内周側および外周側の辺がそれぞれ円弧状となっており、内周側および外周側の辺それぞれを繋げると、径の異なる断続的な円を描く状態となっている。言い換えると、複数の電極部53は、実装部51を囲む円環を所定間隔で均等に分割した構成となっている。 As shown in FIG. 1 and FIG. 6, the mounting board 3 includes a plurality of electrode parts 53 arranged at a distance from each other so as to surround the mounting part 51 at the outer peripheral side of the etching groove 41. When the micro-vibrator 2 is mounted, the plurality of electrode parts 53 are in a state of being separated from the rim 211 of the micro-vibrator 2 by a predetermined distance, and each of them forms a capacitor with the micro-vibrator 2. The plurality of electrode parts 53 have an electrode film 531 formed on the upper surface, and for example, a wire not shown is connected to the electrode film 531, and is electrically connected to an external circuit board not shown. As a result, the mounting board 3 can detect the electrostatic capacitance between the micro-vibrator 2 and generate electrostatic attraction between the micro-vibrator 2 and vibrate the micro-vibrator 2 in wine glass mode through the plurality of electrode parts 53. As shown in FIG. 1, the plurality of electrode parts 53 have inner and outer peripheral sides each having an arc shape when viewed from above, and when the inner and outer peripheral sides are connected, they are in a state of drawing intermittent circles with different diameters. In other words, the multiple electrode sections 53 are configured by equally dividing a ring surrounding the mounting section 51 at a predetermined interval.

なお、実装基板3の「内周側」とは、図7に示すような上面視において、内周枠511に囲まれた内側領域の中心側を意味し、「外周側」とは、内周側とは反対に位置する側を意味する。また、図1等には、実装基板3に16個の電極部53が互いに離れて環を描くように均等配置された例を示しているが、これに限定されるものではなく、電極部53の数や配置については微小振動体2の形状やサイズ等に応じて適宜変更されうる。 The "inner circumference side" of the mounting substrate 3 means the center side of the inner region surrounded by the inner circumference frame 511 in a top view as shown in FIG. 7, and the "outer circumference side" means the side located opposite the inner circumference side. Also, FIG. 1 and other figures show an example in which 16 electrode parts 53 are evenly arranged on the mounting substrate 3 so as to form a ring apart from each other, but this is not limited to this, and the number and arrangement of the electrode parts 53 can be changed as appropriate depending on the shape and size of the micro-vibration body 2.

外枠部54は、それぞれ、例えば図7や図8に示すように、上面にAl等によりなる電極膜541を備えると共に、電極膜541に図示しないワイヤが接続され、図示しない外部の回路基板等と電気的に接続される。これにより、実装基板3は、電極膜541に接続される図示しない外部の電源等により、外枠部54を介して微小振動体2の電位を所望の値に制御することが可能となっている。 As shown in FIG. 7 and FIG. 8, each outer frame portion 54 has an electrode film 541 made of Al or the like on its upper surface, and a wire (not shown) is connected to the electrode film 541, and the electrode film 541 is electrically connected to an external circuit board (not shown). This makes it possible for the mounting board 3 to control the potential of the micro-vibrator 2 to a desired value via the outer frame portion 54 using an external power source (not shown) connected to the electrode film 541.

実装基板3は、例えば、次のような工程により製造されうる。 The mounting substrate 3 can be manufactured, for example, by the following process.

まず、例えば、ホウケイ酸ガラスによりなる下部基板4を用意し、バッファードフッ酸を用いたウエットエッチングにより円環状のエッチング溝41および複数の逃げ溝43を形成する。その後、エッチング溝41を跨ぐブリッジ配線42をAlのスパッタによる成膜を用いたリフトオフ法により形成する。なお、ブリッジ配線42の厚みは、例えば、0.1μm程度とされる。 First, a lower substrate 4 made of, for example, borosilicate glass is prepared, and a circular etching groove 41 and a number of escape grooves 43 are formed by wet etching using buffered hydrofluoric acid. Then, a bridge wiring 42 spanning the etching groove 41 is formed by a lift-off method using a film formed by sputtering Al. The thickness of the bridge wiring 42 is, for example, about 0.1 μm.

続けて、例えば、SiによりなるSi基板(後の上部基板5)を用意し、ホウケイ酸ガラスの下部基板4と陽極接合する。次にSi基板に後の内周枠511、外周枠512、電極部53、外枠部54となる領域に区画する溝を公知のエッチング方法により形成する。 Next, a Si substrate (later upper substrate 5) made of, for example, Si is prepared and anodically bonded to the lower substrate 4 made of borosilicate glass. Next, grooves are formed in the Si substrate by a known etching method to define the areas that will later become the inner peripheral frame 511, the outer peripheral frame 512, the electrode portion 53, and the outer frame portion 54.

具体的には、例えば、DRIE(Deep Reactive Ion Etchingの略)によりトレンチエッチングを行って、下部基板4を露出させ、内周枠511、外周枠512、電極部53、外枠部54の各領域を分離させる。これにより、Si基板は、互いに離隔した実装部51、複数の電極部53、および外枠部54を備える上部基板5となる。また、この工程により、下部基板4に形成された複数の逃げ溝43は、上面視にて、内周枠511を跨ぐ配置となる。 Specifically, for example, trench etching is performed by DRIE (short for Deep Reactive Ion Etching) to expose the lower substrate 4 and separate the inner peripheral frame 511, the outer peripheral frame 512, the electrode portion 53, and the outer frame portion 54. As a result, the Si substrate becomes the upper substrate 5 having the mounting portion 51, the multiple electrode portions 53, and the outer frame portion 54, which are spaced apart from each other. Furthermore, this process results in the multiple clearance grooves 43 formed in the lower substrate 4 being arranged to straddle the inner peripheral frame 511 when viewed from above.

最後に、例えば、複数の電極部53および外枠部54の上面にスパッタリング等の真空成膜法により電極膜531、541を形成する。このような工程の結果、上述した構造の実装基板3が得られる。そして、実装基板3に微小振動体2を搭載する際に、内周枠511に囲まれた内側領域に、接合部材52として例えばAuSnを主成分とする板状部材が配置される。 Finally, electrode films 531, 541 are formed on the upper surfaces of the multiple electrode portions 53 and the outer frame portion 54 by a vacuum film formation method such as sputtering. As a result of this process, the mounting substrate 3 having the above-mentioned structure is obtained. Then, when mounting the micro-vibrator 2 on the mounting substrate 3, a plate-shaped member mainly composed of, for example, AuSn is placed as the bonding member 52 in the inner area surrounded by the inner frame 511.

なお、図7等で示す1つの実装基板3は、例えば、ウエハに上記構造の複数の実装基板3となる領域を形成し、ダイシングカット等により個片化することにより得られる。言い換えると、実装基板3の製造については、ウエハレベルでの対応が可能である。 Note that one mounting substrate 3 shown in FIG. 7 etc. can be obtained, for example, by forming areas on a wafer that will become multiple mounting substrates 3 of the above structure, and then dividing the wafer into individual pieces by dicing or the like. In other words, the manufacturing of the mounting substrate 3 can be handled at the wafer level.

以上が、慣性センサ1の基本的な構成である。慣性センサ1は、駆動時には、複数の電極部53の一部と微小振動体2との間に静電引力を生じさせることで、微小振動体2をワイングラスモードで振動させる。慣性センサ1は、微小振動体2が振動状態のときに、外部からコリオリ力が印加されると、微小振動体2が変位してその振動モードの節の位置が変化する。慣性センサ1は、この振動モードの節の変化を微小振動体2と複数の電極部53との静電容量で検出することで、慣性センサ1に働く角速度の検出が可能となっている。 The above is the basic configuration of the inertial sensor 1. When the inertial sensor 1 is driven, it generates an electrostatic attraction between some of the multiple electrode parts 53 and the micro-vibrator 2, causing the micro-vibrator 2 to vibrate in wine glass mode. When an external Coriolis force is applied to the inertial sensor 1 while the micro-vibrator 2 is in a vibrating state, the micro-vibrator 2 is displaced and the position of the node of the vibration mode changes. The inertial sensor 1 detects the change in the node of this vibration mode by the electrostatic capacitance between the micro-vibrator 2 and the multiple electrode parts 53, making it possible to detect the angular velocity acting on the inertial sensor 1.

慣性センサ1の製造においては、内周枠511および外周枠512によりなる実装部51と、逃げ溝43とを有する実装基板3を用いることにより、簡便に、微小振動体2の実装基板3に対する位置決め精度の確保および傾き抑制の両立が可能となっている。 In the manufacture of the inertial sensor 1, by using a mounting substrate 3 having a mounting section 51 consisting of an inner peripheral frame 511 and an outer peripheral frame 512 and an escape groove 43, it is possible to easily ensure both the positioning accuracy of the micro-vibrator 2 relative to the mounting substrate 3 and the suppression of tilt.

〔慣性センサの製造方法〕
次に、本実施形態の慣性センサ1の製造方法について図11A~図11Fを参照して説明するが、微小振動体2および実装基板3自体の製造については上記したため、ここでは、微小振動体2を実装基板3に接合する工程について主に説明する。
[Inertial sensor manufacturing method]
Next, the manufacturing method of the inertial sensor 1 of this embodiment will be described with reference to Figures 11A to 11F. However, since the manufacture of the micro-vibrator 2 and the mounting substrate 3 themselves has been described above, the process of joining the micro-vibrator 2 to the mounting substrate 3 will be mainly described here.

なお、図11A~図11Fは、図9に示す断面図に相当するものである。また、図11C~図11Fでは、見易くするため、後述するピックアップ機構300の一部のみを簡易的に示すと共に、コレット302の内部を破線で示している。 Note that Figures 11A to 11F correspond to the cross-sectional view shown in Figure 9. Also, for ease of viewing, Figures 11C to 11F simply show only a portion of the pickup mechanism 300 (described later), and show the inside of the collet 302 with dashed lines.

まず、図11Aに示すように、例えば、上記の方法により製造した微小振動体2および実装基板3を用意する。その後、例えば、図11Bに示すように、内周枠511に囲まれた内側領域に接合部材52を配置する。接合部材52としては、例えば、AuSn板材やAuペーストやAg(銀)ペースト等の導電性の接合材料が用いられ、板材の場合には図示しないピンセット等を用いることによって、ペースト状の場合にはシリンジ等を用いて塗布されることによって配置される。 First, as shown in FIG. 11A, for example, a micro-vibrator 2 and a mounting substrate 3 manufactured by the above method are prepared. Then, as shown in FIG. 11B, for example, a bonding member 52 is placed in the inner area surrounded by an inner peripheral frame 511. For example, a conductive bonding material such as an AuSn plate material, Au paste, or Ag (silver) paste is used as the bonding member 52, and in the case of a plate material, it is placed by using tweezers (not shown), or in the case of a paste, it is applied using a syringe, or the like.

なお、接合部材52としては、微小振動体2の接合工程の安定化やアウトガス低減の観点から、AuSn等によりなる板状部材が用いられることが好ましい。接合部材52が板状部材である場合、微小振動体2を内周枠511に嵌め込む前に接合部材52の一部が逃げ溝43に過度に流れ込むことを抑止でき、後述する微小振動体2の接合工程が安定する。また、接合部材52として板状部材を用いることで、ペースト材料を用いる場合に比べて、微小振動体2を実装基板3に接合した後の後述する真空封止において、接合部材52から生じるアウトガスの量を低減できる。接合部材52として板状部材を用いる場合には、例えば、Au80%Sn20%の組成で構成され、厚み50μm~200μm程度の板状の成形はんだを用いることができる。接合部材52の厚みについては、内周枠511の厚み以下であればよく、上記の例に限られず、適宜変更されうる。 In addition, it is preferable to use a plate-shaped member made of AuSn or the like as the joining member 52 from the viewpoint of stabilizing the joining process of the micro-vibrator 2 and reducing outgassing. When the joining member 52 is a plate-shaped member, it is possible to prevent a part of the joining member 52 from flowing excessively into the escape groove 43 before the micro-vibrator 2 is fitted into the inner peripheral frame 511, and the joining process of the micro-vibrator 2 described later is stabilized. In addition, by using a plate-shaped member as the joining member 52, the amount of outgas generated from the joining member 52 can be reduced in the vacuum sealing described later after the micro-vibrator 2 is joined to the mounting substrate 3, compared to the case where a paste material is used. When a plate-shaped member is used as the joining member 52, for example, a plate-shaped formed solder having a composition of Au80%Sn20% and a thickness of about 50 μm to 200 μm can be used. The thickness of the joining member 52 may be equal to or less than the thickness of the inner peripheral frame 511, and is not limited to the above example and can be changed as appropriate.

そして、例えば、実装基板3を図示しないマウンタ装置の吸着面に載置し、真空吸着により実装基板3を固定する。なお、この図示しないマウンタ装置は、吸着面を加熱可能な加熱機構を備えた構成となっている。 Then, for example, the mounting substrate 3 is placed on the suction surface of a mounter device (not shown), and the mounting substrate 3 is fixed by vacuum suction. Note that this mounter device (not shown) is configured with a heating mechanism capable of heating the suction surface.

続いて、例えば図11Cに示すように、微小振動体2のうち凹部22の吸着面22aにピックアップ機構300の一部を挿入し、真空吸着により微小振動体2を把持する。ピックアップ機構300は、例えば、台座部301と、略円筒形状のコレット302とを備え、台座部301が図示しない搬送部および真空機構に接続されており、コレット302による真空吸着と、吸着した物体の搬送とが可能な構成となっている。ピックアップ機構300は、例えば、コレット302の最大径が凹部22の内径よりも小さくされ、コレット302の先端部の外径が他の部分よりも小さくなっている。また、ピックアップ機構300は、コレット302の長さが微小振動体2の凹部22の深さよりも大きくなっており、コレット302を微小振動体2の凹部22に挿入した際に、コレット302が微小振動体2の吸着面22a以外に当接しない構成となっている。これにより、微小振動体2を搬送する際に、微小振動体2の導電層23や基材に傷が生じることが抑止される。 Next, as shown in FIG. 11C, for example, a part of the pickup mechanism 300 is inserted into the suction surface 22a of the recess 22 of the micro-vibration body 2, and the micro-vibration body 2 is gripped by vacuum suction. The pickup mechanism 300 includes, for example, a base 301 and a collet 302 having a substantially cylindrical shape, and the base 301 is connected to a transport unit and a vacuum mechanism (not shown), and is configured to be capable of vacuum suction by the collet 302 and transport of the object that has been suctioned. For example, the maximum diameter of the collet 302 of the pickup mechanism 300 is smaller than the inner diameter of the recess 22, and the outer diameter of the tip of the collet 302 is smaller than the other parts. In addition, the length of the collet 302 of the pickup mechanism 300 is greater than the depth of the recess 22 of the micro-vibration body 2, and when the collet 302 is inserted into the recess 22 of the micro-vibration body 2, the collet 302 does not come into contact with anything other than the suction surface 22a of the micro-vibration body 2. This prevents the conductive layer 23 and base material of the micro-vibration body 2 from being damaged when the micro-vibration body 2 is transported.

一方、図示しないマウンタ装置により実装基板3を吸着した状態で加熱し、接合部材52を溶融もしくは軟化させておく。これにより、接合部材52は、例えば図11Cに示すように、一部が逃げ溝43に入り込みつつ、残部が内周枠511の内側領域に残った状態となる。 Meanwhile, the mounting substrate 3 is heated while being adsorbed by a mounter device (not shown) to melt or soften the bonding member 52. As a result, a portion of the bonding member 52 enters the clearance groove 43 while the remainder remains in the inner region of the inner peripheral frame 511, as shown in FIG. 11C, for example.

なお、ここでは、微小振動体2を内周枠511に嵌め込む前に、実装基板3を加熱する例について説明したが、これに限定されるものではなく、微小振動体2を内周枠511に嵌め込んだ後に実装基板3を加熱しても構わない。 Note that, although an example in which the mounting substrate 3 is heated before the micro-vibrator 2 is fitted into the inner frame 511 has been described here, this is not limiting, and the mounting substrate 3 may be heated after the micro-vibrator 2 is fitted into the inner frame 511.

そして、例えば図11Dに示すように、上記のピックアップ機構300を用いて、微小振動体2の吸着面22aを真空吸着により把持しつつ、微小振動体2を実装基板3のうち環状の内周枠511に嵌め込んで内側領域に挿入する。これにより、実装基板3に対する微小振動体2の位置決めが簡便かつ高精度になされると共に、その後の面内方向、すなわちxy平面上における微小振動体2の位置ズレが抑制される効果が得られる。続けて、微小振動体2を実装基板3側に近づけていき、微小振動体2の実装面22bを接合部材52に接触させる。 Then, as shown in FIG. 11D, for example, the pickup mechanism 300 is used to hold the suction surface 22a of the micro-vibrator 2 by vacuum suction, while fitting the micro-vibrator 2 into the annular inner frame 511 of the mounting substrate 3 and inserting it into the inner region. This allows the micro-vibrator 2 to be positioned easily and with high precision relative to the mounting substrate 3, and has the effect of suppressing subsequent positional deviation of the micro-vibrator 2 in the in-plane direction, i.e., on the xy plane. Next, the micro-vibrator 2 is brought closer to the mounting substrate 3, and the mounting surface 22b of the micro-vibrator 2 is brought into contact with the bonding member 52.

微小振動体2の実装基板3に対する位置合わせについては、例えば、微小振動体2および実装基板3を撮像し、公知の画像処理技術によりエッジ検出により特徴点を抽出することで、相対位置を調整するといった方法で行うことができる。 The alignment of the micro-vibrator 2 with respect to the mounting substrate 3 can be performed, for example, by capturing images of the micro-vibrator 2 and mounting substrate 3 and extracting feature points by edge detection using known image processing techniques, thereby adjusting the relative positions.

また、内周枠511は、前述したように、微小振動体2の凹部22の外径に対して所定のクリアランスが生じる内径寸法とされている。そのため、画像処理技術による微小振動体2と実装基板3との相対位置調整に加え、内周枠511への微小振動体2の嵌め込みにより、簡便に、実装基板3に対する微小振動体2の位置合わせ精度を確保することが可能となっている。 As described above, the inner diameter of the inner frame 511 is set to a dimension that creates a predetermined clearance with respect to the outer diameter of the recess 22 of the micro-vibrator 2. Therefore, in addition to adjusting the relative positions of the micro-vibrator 2 and the mounting substrate 3 using image processing technology, by fitting the micro-vibrator 2 into the inner frame 511, it is possible to easily ensure the alignment accuracy of the micro-vibrator 2 with respect to the mounting substrate 3.

その後、ピックアップ機構300により微小振動体2を実装基板3側に押し込み、実装面22bで溶融した接合部材52を押圧する。このとき、例えば図11Eに示すように、溶融した接合部材52の余剰部分は、逃げ溝43に押し出され、逃げ溝43を通じて内側領域から外側領域に流れ込む。これにより、微小振動体2の実装面22bと下部基板4のうち実装面22bと向き合う搭載面との間に必要以上の接合部材52が介在しないため、これらの面同士の距離が所定以下となり、微小振動体2が実装基板3に対して傾くことを抑制できる。 Then, the pickup mechanism 300 pushes the micro-vibrator 2 toward the mounting substrate 3, pressing the bonding material 52 that has melted on the mounting surface 22b. At this time, as shown in FIG. 11E, for example, the excess portion of the melted bonding material 52 is pushed out into the escape groove 43, and flows from the inner region to the outer region through the escape groove 43. As a result, no more bonding material 52 than necessary is interposed between the mounting surface 22b of the micro-vibrator 2 and the mounting surface of the lower substrate 4 that faces the mounting surface 22b, so that the distance between these surfaces is equal to or less than a predetermined value, and tilting of the micro-vibrator 2 with respect to the mounting substrate 3 can be suppressed.

その後、図示しないマウンタ装置等の吸着面の温度を下げ、溶融した接合部材52を固化させることで微小振動体2と実装基板3とを接合する。そして、例えば図11Fに示すように、コレット302の内部を常圧に戻して微小振動体2の真空吸着を解除し、ピックアップ機構300を退避させ、コレット302を微小振動体2の凹部22から抜き出す。 Then, the temperature of the suction surface of a mounting device (not shown) is lowered, and the molten bonding material 52 is solidified to bond the micro-vibrator 2 and the mounting substrate 3. Then, as shown in FIG. 11F, for example, the inside of the collet 302 is returned to normal pressure to release the vacuum suction of the micro-vibrator 2, the pickup mechanism 300 is retracted, and the collet 302 is removed from the recess 22 of the micro-vibrator 2.

続いて、図示しないマウンタ装置等による吸着を解除し、微小振動体2が接合された実装基板3を吸着面から取り外す。そして、実装基板3を図示しない回路基板等に搭載し、実装基板3の電極膜531、541にワイヤボンディングをし、回路基板等と実装基板3の電極部53および外枠部54とを電気的に接続し、真空気密封止を行うことで慣性センサ1を製造することができる。 Then, the suction by the mounting device (not shown) or the like is released, and the mounting substrate 3 to which the micro-vibrator 2 is bonded is removed from the suction surface. The mounting substrate 3 is then mounted on a circuit board (not shown) or the like, wire bonding is performed on the electrode films 531, 541 of the mounting substrate 3, the circuit board or the like is electrically connected to the electrode portion 53 and the outer frame portion 54 of the mounting substrate 3, and a vacuum airtight seal is performed to manufacture the inertial sensor 1.

以上が、本実施形態の慣性センサ1の基本的な製造方法である。 The above is the basic manufacturing method for the inertial sensor 1 of this embodiment.

〔実装基板の逃げ溝〕
逃げ溝43による微小振動体2の傾き抑制効果について、例えば図12Aに示す比較例の実装基板6に微小振動体2を接合する場合と対比して説明する。
[Mounting board clearance groove]
The effect of suppressing the inclination of the micro-vibrator 2 by the relief groove 43 will be described in comparison with the case where the micro-vibrator 2 is bonded to the mounting substrate 6 of the comparative example shown in FIG. 12A.

比較例の実装基板6は、下部基板4に上部基板5が接合されてなり、上部基板5には1つの環状枠体で構成された実装部61が形成されている。比較例の実装基板6は、実装部61で囲まれた領域に接合部材52が配置され、微小振動体2の凹部22が接合部材52を介して接合される。実装部61は、その内径が微小振動体2の凹部22の外径に対して大きく、微小振動体2が挿入されたとき、例えば数十μmのクリアランスが生じ、微小振動体2とは当接しない寸法となっている。そして、比較例の実装基板6は、逃げ溝43が形成されていない。 The mounting board 6 of the comparative example is formed by bonding an upper board 5 to a lower board 4, and a mounting section 61 consisting of a single annular frame is formed on the upper board 5. In the mounting board 6 of the comparative example, a bonding member 52 is disposed in an area surrounded by the mounting section 61, and the recess 22 of the micro-vibrator 2 is bonded via the bonding member 52. The inner diameter of the mounting section 61 is larger than the outer diameter of the recess 22 of the micro-vibrator 2, and when the micro-vibrator 2 is inserted, a clearance of, for example, several tens of μm is generated, and the mounting section 61 is sized not to come into contact with the micro-vibrator 2. Furthermore, the mounting board 6 of the comparative example does not have an escape groove 43 formed.

比較例の実装基板6に微小振動体2を接合する場合、微小振動体2は、例えば図12Bに示すように、実装基板6に対して傾くおそれがある。これは、比較例の実装基板6では、接合部材52のすべてが環状の実装部61内に留まることで、下部基板4と微小振動体2との間に必要以上の接合部材52が介在し、微小振動体2の実装面22bと下部基板4の搭載面との距離が大きくなるためである。この場合、接合部材52が固化するまでの間に、微小振動体2が接合部材52上で泳ぐような状態となり、比較例の実装基板6に対して傾き得る。 When the micro-vibrator 2 is bonded to the mounting substrate 6 of the comparative example, the micro-vibrator 2 may tilt relative to the mounting substrate 6, as shown in FIG. 12B, for example. This is because, in the mounting substrate 6 of the comparative example, all of the bonding member 52 remains within the annular mounting portion 61, resulting in more bonding member 52 than necessary being interposed between the lower substrate 4 and the micro-vibrator 2, and the distance between the mounting surface 22b of the micro-vibrator 2 and the mounting surface of the lower substrate 4 becoming larger. In this case, the micro-vibrator 2 may float on the bonding member 52 until the bonding member 52 solidifies, and may tilt relative to the mounting substrate 6 of the comparative example.

これに対して、本実施形態に係る実装基板3は、下部基板4のうち実装部51の内側領域に逃げ溝43が設けられており、溶融した接合部材52の余剰部分が外側領域に誘導される構成となっている。その結果、微小振動体2を接合する際に、微小振動体2の実装面22bと下部基板4の搭載面との間に必要以上の接合部材52が介在することが抑制され、これらの面同士の距離が小さくなる。そのため、微小振動体2は、溶融した接合部材52が再び固化するまでの間に、接合部材52上で泳ぐこと、すなわち、実装基板3に対して傾くことが抑制される。 In contrast, the mounting substrate 3 according to this embodiment is configured such that an escape groove 43 is provided in the inner region of the mounting portion 51 of the lower substrate 4, and the excess portion of the molten bonding material 52 is guided to the outer region. As a result, when bonding the micro-vibrator 2, the presence of more bonding material 52 than necessary between the mounting surface 22b of the micro-vibrator 2 and the mounting surface of the lower substrate 4 is suppressed, and the distance between these surfaces is reduced. Therefore, the micro-vibrator 2 is suppressed from swimming on the bonding material 52, i.e., tilting with respect to the mounting substrate 3, until the molten bonding material 52 solidifies again.

〔微小振動体の把持、実装基板の内周枠〕
上記の製造方法における微小振動体2の把持方法および実装基板3の内周枠511の効果について説明する。
[Holding of micro-vibration body, inner frame of mounting board]
The method of holding the micro-vibrator 2 and the effect of the inner peripheral frame 511 of the mounting substrate 3 in the above manufacturing method will be described.

BRG構造の慣性センサ1を製造する場合、微小振動体2のリム211と複数の電極部53とのそれぞれの間隔を同じとし、1つの電極部53と対向する微小振動体2とで構成されるキャパシタにおける初期の静電容量を一定にする必要がある。これは、電極部53ごとに微小振動体2とのギャップが異なると、外力が慣性センサ1に印加されたときの微小振動体2の変位に伴う上記キャパシタにおける静電容量の変化が電極部53ごとに異なることとなり、センサ精度が低下するためである。そのため、微小振動体2を実装基板3に搭載するとき、その位置決めについては所定以上の高い精度が求められる。 When manufacturing an inertial sensor 1 with a BRG structure, it is necessary to make the distance between the rim 211 of the micro-vibrator 2 and each of the multiple electrode parts 53 the same, and to make the initial capacitance of the capacitor formed by one electrode part 53 and the opposing micro-vibrator 2 constant. This is because if the gap between the micro-vibrator 2 differs for each electrode part 53, the change in capacitance of the capacitor associated with the displacement of the micro-vibrator 2 when an external force is applied to the inertial sensor 1 will differ for each electrode part 53, and the sensor accuracy will decrease. Therefore, when mounting the micro-vibrator 2 on the mounting substrate 3, a certain level of high accuracy is required for its positioning.

このような高精度が求められる位置決め実装としては、画像処理を利用してエッジ検出を行い、各部材の特徴点を抽出する方法が挙げられる。具体的には、微小振動体2および実装基板3を撮像した後、公知の画像処理により微小振動体2や実装基板3のエッジを検出して特徴点を抽出し、その位置関係を推定し、位置合わせをしつつ、微小振動体2を実装基板3に搭載することが想定される。 One example of positioning mounting that requires high accuracy is a method that uses image processing to detect edges and extract feature points of each component. Specifically, after capturing an image of the micro-vibrator 2 and mounting board 3, known image processing is used to detect the edges of the micro-vibrator 2 and mounting board 3, extract feature points, estimate their positional relationship, and align the micro-vibrator 2 onto the mounting board 3.

しかし、三次元曲面形状の微小振動体2の曲面部21やリム211を把持すると、把持機構により微小振動体2の一部が隠れてしまい、エッジ検出による微小振動体2の特徴点の抽出が難しくなる。そのため、画像処理だけを利用した微小振動体2の実装方法は、工程が煩雑となり、位置ズレによって微小振動体2やその電極膜に傷が付いたり、製造コストが増大したりするおそれがある。 However, when the curved surface 21 or rim 211 of the three-dimensionally curved micro-vibrator 2 is gripped, part of the micro-vibrator 2 is hidden by the gripping mechanism, making it difficult to extract the feature points of the micro-vibrator 2 by edge detection. Therefore, a mounting method for the micro-vibrator 2 that uses only image processing is complicated, and there is a risk that the micro-vibrator 2 or its electrode film may be damaged due to misalignment, and manufacturing costs may increase.

そこで、本発明者らは、微小振動体2のうち凹部22にコレット302を挿入し、吸着面22aへの真空吸着により微小振動体2を把持する方法を考案した。これによれば、把持機構により微小振動体2の外郭が隠される領域が減少し、画像処理における微小振動体2の特徴点抽出が容易となると共に、微小振動体2に傷が生じることを抑制できる。 The inventors therefore devised a method of inserting a collet 302 into the recess 22 of the micro-vibrator 2 and gripping the micro-vibrator 2 by vacuum suction to the suction surface 22a. This reduces the area where the outer contour of the micro-vibrator 2 is hidden by the gripping mechanism, making it easier to extract feature points of the micro-vibrator 2 in image processing, and also suppressing damage to the micro-vibrator 2.

また、本発明者らは、実装基板3の実装部51を環状の内周枠511とこれを囲む外周枠512とにより構成し、内周枠511の内径を微小振動体2の凹部22の外径に対応させ、微小振動体2を内周枠511に嵌め込む方法を考案した。これによれば、画像処理により微小振動体2と実装基板3との相対位置を大まかに調整しておけば、微小振動体2を実装基板3の内周枠511に嵌め込むことが容易となる。また、微小振動体2を内周枠511に嵌め込むことで実装基板3に対する位置合わせがなされるため、簡便に、所定以上の精度での位置決めが可能となる。 The inventors have also devised a method in which the mounting section 51 of the mounting substrate 3 is composed of an annular inner frame 511 and an outer frame 512 surrounding it, the inner diameter of the inner frame 511 corresponds to the outer diameter of the recess 22 of the micro-vibrator 2, and the micro-vibrator 2 is fitted into the inner frame 511. According to this, if the relative positions of the micro-vibrator 2 and the mounting substrate 3 are roughly adjusted by image processing, it becomes easy to fit the micro-vibrator 2 into the inner frame 511 of the mounting substrate 3. Furthermore, since the micro-vibrator 2 is aligned with the mounting substrate 3 by fitting it into the inner frame 511, it becomes possible to easily position it with a predetermined degree of accuracy or higher.

本実施形態によれば、実装部51が内周枠511と外周枠512とによりなり、内側領域と外側領域とが逃げ溝43で連通した構成の実装基板3に、微小振動体2が搭載された構造の慣性センサ1となっている。内周枠511に微小振動体2を嵌め込まれるため、微小振動体2の位置決めが簡便かつ高精度となると共に、実装基板3の逃げ溝43により微小振動体2の傾きが抑制されるため、信頼性が高く、高感度な慣性センサ1となる。 According to this embodiment, the inertial sensor 1 has a structure in which the micro-vibrator 2 is mounted on the mounting substrate 3 having a mounting section 51 composed of an inner peripheral frame 511 and an outer peripheral frame 512, with the inner and outer regions connected by an escape groove 43. Since the micro-vibrator 2 is fitted into the inner peripheral frame 511, positioning of the micro-vibrator 2 is simple and highly accurate, and the escape groove 43 of the mounting substrate 3 suppresses tilt of the micro-vibrator 2, resulting in a highly reliable and sensitive inertial sensor 1.

(第2実施形態)
第2実施形態の慣性センサ1について、図13~図16を参照して説明する。
Second Embodiment
The inertial sensor 1 of the second embodiment will be described with reference to FIGS.

本実施形態の慣性センサ1は、例えば図13に示すように、実装基板3が逃げ溝43の代わりに、内周枠511の上端に形成された上端溝55を有する点で上記第1実施形態と相違する。本実施形態では、この相違点について主に説明する。 The inertial sensor 1 of this embodiment differs from the first embodiment in that the mounting substrate 3 has an upper end groove 55 formed at the upper end of the inner peripheral frame 511 instead of the escape groove 43, as shown in FIG. 13, for example. This difference will be mainly described in this embodiment.

実装基板3は、本実施形態では、例えば図14に示すように、接合部材52の余剰部分を内側領域から外側領域に逃がす上端溝55が、内周枠511のうち上面511aに形成されている。なお、内周枠511の上面511aとは、図15に示すように、内周枠511のうち下部基板4と向き合う面を下面511bとして、下面511bの反対面であり、内周枠511の上端に位置する。実装基板3は、例えば、内周枠511に複数の上端溝55を有し、上面視にて、複数の上端溝55が対称配置された構成となっている。 In the present embodiment, as shown in FIG. 14, for example, the mounting substrate 3 has an upper end groove 55 formed in the upper surface 511a of the inner frame 511, which allows the excess portion of the joining member 52 to escape from the inner region to the outer region. Note that the upper surface 511a of the inner frame 511 is the surface opposite the lower surface 511b, with the surface of the inner frame 511 facing the lower substrate 4 being the lower surface 511b, as shown in FIG. 15, and is located at the upper end of the inner frame 511. For example, the mounting substrate 3 has a configuration in which the inner frame 511 has multiple upper end grooves 55, and the multiple upper end grooves 55 are arranged symmetrically when viewed from above.

上端溝55は、例えば、DRIE等のトレンチエッチングにより、上部基板5を内周枠511、外周枠512、電極部53および外枠部54に分離する工程において形成される。具体的には、例えば上部基板5のトレンチエッチングにおいて、エッチング開始当初には上部基板5のうち分離する領域を露出させつつ、上端溝55に相当する領域を覆うマスクを用いる。そして、エッチングの途中で上部基板5のうち分離する領域および上端溝55に相当する領域を露出させた別のマスクに切り替え、下部基板4の一部が上部基板5から露出するまでエッチングを行う。上端溝55は、例えば、上記のような工程で形成されるが、上部基板5の分離工程とは別の工程でエッチングを行うことで形成されてもよい。なお、上端溝55の数、配置、寸法等については、適宜変更されうる。上端溝55は、上記第1実施形態における逃げ溝43に相当し、逃げ溝43と同様の役割を果たす。 The upper end groove 55 is formed in a process of separating the upper substrate 5 into the inner peripheral frame 511, the outer peripheral frame 512, the electrode portion 53, and the outer frame portion 54 by trench etching such as DRIE. Specifically, for example, in trench etching of the upper substrate 5, a mask is used that covers the region corresponding to the upper end groove 55 while exposing the region to be separated in the upper substrate 5 at the beginning of etching. Then, during the etching, a different mask is used that exposes the region to be separated in the upper substrate 5 and the region corresponding to the upper end groove 55, and etching is performed until a part of the lower substrate 4 is exposed from the upper substrate 5. The upper end groove 55 is formed, for example, by the process described above, but may be formed by performing etching in a process other than the separation process of the upper substrate 5. The number, arrangement, dimensions, etc. of the upper end grooves 55 can be changed as appropriate. The upper end groove 55 corresponds to the escape groove 43 in the first embodiment described above, and plays a similar role to the escape groove 43.

内周枠511は、上端溝55が形成された部分については、例えば図14に示すように外周枠512よりも高さが小さく、その他の部分については、例えば図15に示すように外周枠512と同じ高さとなっている。 The inner peripheral frame 511 has a smaller height than the outer peripheral frame 512 in the portion where the upper end groove 55 is formed, as shown in FIG. 14, for example, and the other portions have the same height as the outer peripheral frame 512, as shown in FIG. 15, for example.

本実施形態の慣性センサ1は、下部基板4の逃げ溝43の代わりに、内周枠511の上端溝55を有する実装基板3を用意することを除き、上記第1実施形態と同様の工程により製造される。この実装基板3に微小振動体2を接合すると、接合部材52の余剰部分は、例えば図16に示すように、実装基板3の上側に這い上がって上端溝55の高さにまで押し出され、上端溝55を通じて、内側領域から外側領域に流入する。これにより、微小振動体2の実装面22bと実装基板3の搭載面との間に必要以上の接合部材52が介在することが抑制され、これらの面同士の距離が小さくなる。その結果、微小振動体2が実装基板3に対して傾くことが抑制され、信頼性が高く、高感度な慣性センサ1を製造することができる。 The inertial sensor 1 of this embodiment is manufactured by the same process as the first embodiment, except that a mounting substrate 3 having an upper end groove 55 of an inner peripheral frame 511 is prepared instead of the escape groove 43 of the lower substrate 4. When the micro-vibrator 2 is bonded to this mounting substrate 3, the excess part of the bonding member 52 creeps up to the upper side of the mounting substrate 3 and is pushed out to the height of the upper end groove 55, as shown in FIG. 16, for example, and flows from the inner region to the outer region through the upper end groove 55. This prevents the bonding member 52 from being interposed more than necessary between the mounting surface 22b of the micro-vibrator 2 and the mounting surface of the mounting substrate 3, and reduces the distance between these surfaces. As a result, the micro-vibrator 2 is prevented from tilting with respect to the mounting substrate 3, and a highly reliable and sensitive inertial sensor 1 can be manufactured.

本実施形態によれば、内周枠511に設けられた上端溝55が接合部材52の余剰部分を内側領域から外側領域に逃がす逃げ溝として機能する構成の実装基板3を用いた慣性センサ1となる。これにより、上記第1実施形態と同様に、実装基板3に対する微小振動体2の簡便な位置決めおよび傾き抑制を両立することが可能となり、信頼性が高く、高感度な慣性センサ1が得られる。 According to this embodiment, the inertial sensor 1 uses a mounting substrate 3 configured such that the upper end groove 55 provided in the inner peripheral frame 511 functions as an escape groove for allowing the excess portion of the joining member 52 to escape from the inner region to the outer region. As a result, similar to the first embodiment, it is possible to achieve both easy positioning of the micro-vibrator 2 relative to the mounting substrate 3 and suppression of tilt, resulting in a highly reliable and sensitive inertial sensor 1.

(第3実施形態)
第3実施形態の慣性センサ1について、図17~図19を参照して説明する。
Third Embodiment
The inertial sensor 1 of the third embodiment will be described with reference to FIGS.

図17では、内周枠511の構成を分かり易くするため、内周枠511のうち後述する下端溝56に隣接する別断面の外郭を破線で示している。 In FIG. 17, in order to make the configuration of the inner peripheral frame 511 easier to understand, the outer contour of another cross section of the inner peripheral frame 511 adjacent to the lower end groove 56 described below is shown by a dashed line.

本実施形態の慣性センサ1は、例えば図17および図18に示すように、実装基板3が逃げ溝43の代わりに、内周枠511の下端に形成された下端溝56を有する点で上記第1実施形態と相違する。本実施形態では、この相違点について主に説明する。 The inertial sensor 1 of this embodiment differs from the first embodiment in that the mounting substrate 3 has a bottom groove 56 formed at the bottom end of the inner frame 511 instead of the escape groove 43, as shown in, for example, Figures 17 and 18. This difference will be mainly described in this embodiment.

実装基板3は、本実施形態では、例えば図18に示すように、内周枠511が複数の下端溝56を有し、下部基板4に逃げ溝43が形成されていない構成となっている。 In this embodiment, as shown in FIG. 18, the mounting substrate 3 has an inner peripheral frame 511 with multiple bottom end grooves 56, and no escape grooves 43 are formed in the lower substrate 4.

下端溝56は、例えば、図18に示すように、内周枠511の下端側において平面方向、すなわちxy平面に属する方向に沿って設けられ、下部基板4の内側領域と外側領域とを連通する貫通孔である。下端溝56は、本実施形態では、微小振動体2の接合時において、上記第1実施形態の逃げ溝43と同様に、接合部材52の余剰部分が押し出される溝であって、当該余剰部分を内側領域から外側領域に逃がす役割を果たす。下端溝56は、例えば、後に上部基板5となるSi基板のうち下部基板4との接合面にDRIEによって溝を形成しておき、下部基板4とSi基板との接合後に、内周枠511を形成する工程において当該溝を内周枠511の側面に連通させることで形成される。下端溝56の数、配置や寸法等については、図示された例に限定されるものではなく、適宜変更されうる。 As shown in FIG. 18, the lower end groove 56 is a through hole that is provided on the lower end side of the inner frame 511 in a planar direction, i.e., in a direction belonging to the xy plane, and communicates between the inner region and the outer region of the lower substrate 4. In this embodiment, the lower end groove 56 is a groove through which the excess part of the joining member 52 is pushed out when the micro-vibration body 2 is joined, similar to the escape groove 43 in the first embodiment, and plays a role in letting the excess part escape from the inner region to the outer region. The lower end groove 56 is formed, for example, by forming a groove by DRIE on the joining surface of the Si substrate that will later become the upper substrate 5 with the lower substrate 4, and then, after the lower substrate 4 is joined to the Si substrate, the groove is connected to the side of the inner frame 511 in the process of forming the inner frame 511. The number, arrangement, dimensions, etc. of the lower end grooves 56 are not limited to the example shown in the figure, and can be changed as appropriate.

つまり、実装基板3は、例えば図19に示すように、微小振動体2が接合される際に、接合部材52の余剰部分が下端溝56を通じて内側領域から外側領域に流れ、微小振動体2の実装面22bと下部基板4の実装面との隙間が小さくなる構成である。この実装基板3を用いた慣性センサ1は、内周枠511への嵌め込みにより、簡便かつ高精度に微小振動体2の位置決めがされつつも、微小振動体2の傾きを抑制された構造となる。 In other words, as shown in FIG. 19, for example, when the micro-vibrator 2 is bonded to the mounting substrate 3, the excess portion of the bonding material 52 flows from the inner region to the outer region through the lower end groove 56, reducing the gap between the mounting surface 22b of the micro-vibrator 2 and the mounting surface of the lower substrate 4. The inertial sensor 1 using this mounting substrate 3 has a structure in which the micro-vibrator 2 is easily and highly accurately positioned by being fitted into the inner peripheral frame 511, while the tilt of the micro-vibrator 2 is suppressed.

本実施形態によれば、微小振動体2の搭載時に、内周枠511に設けられた下端溝56により接合部材52の余剰部分を内側領域から外側領域に逃がすことが可能な構成の実装基板3を用いた慣性センサ1となる。これにより、上記第1実施形態と同様に、実装基板3に対する微小振動体2の簡便かつ高精度な位置決めがなされ、微小振動体2の傾きが抑制されるため、信頼性が高く、高感度な慣性センサ1が得られる。 According to this embodiment, the inertial sensor 1 uses a mounting substrate 3 configured such that, when the micro-vibrator 2 is mounted, the bottom end groove 56 provided in the inner peripheral frame 511 allows the excess portion of the bonding member 52 to escape from the inner region to the outer region. As a result, similar to the first embodiment, the micro-vibrator 2 can be easily and highly accurately positioned relative to the mounting substrate 3, and tilting of the micro-vibrator 2 is suppressed, resulting in a highly reliable and sensitive inertial sensor 1.

(第3実施形態の変形例)
実装基板3は、例えば図20や図21に示すように、内周枠511が下端溝56に加えて、下端溝56に連通する複数のサイド溝57を有する構成であってもよい。
(Modification of the third embodiment)
The mounting substrate 3 may have an inner peripheral frame 511 having a bottom end groove 56 as well as a plurality of side grooves 57 communicating with the bottom end groove 56, as shown in, for example, FIGS.

サイド溝57は、例えば、内周枠511の上面511aと下面511bとを繋ぐ高さ方向、すなわち図21に示すz方向に沿って設けられた有底溝である。サイド溝57は、例えば、下端溝56と同じ数だけ内周枠511に設けられ、一端が下端溝56のうち外周枠512側の開口部に繋がるように延設されている。サイド溝57は、例えば図22に示すように、微小振動体2を実装基板3に接合する際に、下端溝56を通じて外側領域に流れ出た接合部材52の余剰部分の一部を、内周枠511の上端側に誘導する役割を果たす。つまり、サイド溝57は、接合部材52の余剰部分が意図しない領域に流出することを抑制するために形成される。 The side grooves 57 are bottomed grooves that are provided in the height direction connecting the upper surface 511a and the lower surface 511b of the inner frame 511, that is, along the z direction shown in FIG. 21. The side grooves 57 are provided in the inner frame 511 in the same number as the bottom end grooves 56, for example, and extend so that one end is connected to the opening of the bottom end groove 56 on the outer frame 512 side. As shown in FIG. 22, for example, when the micro-vibrator 2 is bonded to the mounting substrate 3, the side grooves 57 guide a part of the excess part of the bonding member 52 that flows out to the outer area through the bottom end groove 56 to the upper end side of the inner frame 511. In other words, the side grooves 57 are formed to prevent the excess part of the bonding member 52 from flowing out to an unintended area.

サイド溝57は、例えば、Si基板(後の上部基板5)と下部基板4とを接合した後、DRIEによりSi基板を内周枠511、外周枠512、電極部53および外枠部54の各領域に分離するエッチング工程において同時に形成される。サイド溝57は、例えば図20に示すように、上面視にて、略U字形状とされるが、下端溝56から外側領域に流れ出た溶融状態の接合部材52の余剰部分を誘導できる形状であればよく、略V字形状や他の形状であってもよい。サイド溝57の数や配置等については、下端溝56の数や配置等に応じて適宜変更されうる。 The side grooves 57 are formed, for example, during an etching process in which the Si substrate (later upper substrate 5) and the lower substrate 4 are bonded together and then the Si substrate is separated by DRIE into the inner peripheral frame 511, the outer peripheral frame 512, the electrode portion 53, and the outer frame portion 54. As shown in FIG. 20, for example, the side grooves 57 are substantially U-shaped when viewed from above, but may be substantially V-shaped or have any other shape as long as they can guide the excess portion of the molten bonding material 52 that has flowed out from the lower end groove 56 to the outer region. The number and arrangement of the side grooves 57 can be changed as appropriate depending on the number and arrangement of the lower end grooves 56.

また、実装基板3が内周枠511にサイド溝57を備えることで、例えば図22に示すように、内側領域から外側領域に流れ出た接合部材52の余剰部分が外周枠512に到達することが抑制される。そのため、実装基板3は、サイド溝57が設けられる場合には、外周枠512が上面視にて切れ目のある枠体形状とされてもよい。 In addition, by providing the mounting substrate 3 with the side grooves 57 on the inner peripheral frame 511, as shown in FIG. 22, for example, the excess portion of the joining member 52 that flows out from the inner region to the outer region is prevented from reaching the outer peripheral frame 512. Therefore, when the mounting substrate 3 is provided with the side grooves 57, the outer peripheral frame 512 may be formed into a frame shape with a gap when viewed from above.

本変形例によっても、上記第3実施形態と同様の効果が得られる慣性センサ1となる。また、下端溝56に連通するサイド溝57により、接合部材52の余剰部分が内周枠511の上端に誘導されるため、意図しない領域に接合部材52が流れ出ることを抑制する効果も得られる。 This modified example also provides an inertial sensor 1 that can achieve the same effect as the third embodiment. In addition, the side groove 57 that communicates with the lower end groove 56 guides the excess portion of the joining member 52 to the upper end of the inner peripheral frame 511, which also has the effect of preventing the joining member 52 from flowing out into unintended areas.

(第4実施形態)
第4実施形態の慣性センサ1について、図23~図25を参照して説明する。
Fourth Embodiment
The inertial sensor 1 of the fourth embodiment will be described with reference to FIGS.

本実施形態の慣性センサ1は、例えば図23に示すように、実装基板3の逃げ溝43が内周枠511の内側領域にのみ形成された内溝となっている点で上記第1実施形態と相違する。本実施形態では、この相違点について主に説明する。 The inertial sensor 1 of this embodiment differs from the first embodiment in that the escape groove 43 of the mounting substrate 3 is an inner groove formed only in the inner region of the inner peripheral frame 511, as shown in FIG. 23 for example. This difference will be mainly described in this embodiment.

実装基板3の逃げ溝43は、本実施形態では、例えば図24に示すように、内側領域にのみ設けられた内溝である。逃げ溝43は、本実施形態では、例えば図25に示すように、微小振動体2の接合時において、接合部材52の余剰部分を外側領域ではなく、z方向下側に逃がし、微小振動体2の傾きを抑制する。また、逃げ溝43は、下部基板4の内側領域における微小振動体2との接合に寄与する部位、すなわちマウント部を明確にする溝としても機能し、微小振動体2とマウント部との接合を安定化させる役割も果たす。なお、ここでいうマウント部とは、図23に示す例では、下部基板4の内側領域のうち環状の逃げ溝43に囲まれた領域となるが、この例に限定されるものではない。 In this embodiment, the escape groove 43 of the mounting substrate 3 is an inner groove provided only in the inner region, as shown in FIG. 24, for example. In this embodiment, as shown in FIG. 25, for example, when the micro-vibrator 2 is bonded, the escape groove 43 allows the excess part of the bonding material 52 to escape downward in the z direction instead of to the outer region, thereby suppressing the inclination of the micro-vibrator 2. The escape groove 43 also functions as a groove that clarifies the part that contributes to the bonding with the micro-vibrator 2 in the inner region of the lower substrate 4, that is, the mounting part, and also plays a role in stabilizing the bonding between the micro-vibrator 2 and the mounting part. Note that the mounting part here is the region surrounded by the annular escape groove 43 in the inner region of the lower substrate 4 in the example shown in FIG. 23, but is not limited to this example.

なお、逃げ溝43は、上面視にて、例えば環状とされるが、微小振動体2と下部基板4との接合領域を確保しつつ、接合部材52の余剰部分を逃がすことができればよく、形状、数や配置等について適宜変更され得る。例えば、逃げ溝43は、上面視にて、環状以外の枠体状の溝であってもよく、内周枠511の形状等に応じて適宜その形状が変更されうる。 The escape groove 43 is, for example, annular when viewed from above, but the shape, number, arrangement, etc. can be changed as appropriate as long as it can allow the excess portion of the joining member 52 to escape while securing the joining area between the micro-vibration body 2 and the lower substrate 4. For example, the escape groove 43 may be a frame-shaped groove other than annular when viewed from above, and the shape can be changed as appropriate depending on the shape of the inner frame 511, etc.

本実施形態によっても、上記第1実施形態と同様の効果が得られる慣性センサ1が得られる。
(第5実施形態)
第5実施形態の慣性センサ1について、図26~図28を参照して説明する。
According to this embodiment, too, an inertial sensor 1 that can obtain the same effects as those of the first embodiment can be obtained.
Fifth Embodiment
The inertial sensor 1 of the fifth embodiment will be described with reference to FIGS.

本実施形態の慣性センサ1は、例えば図26に示すように、実装基板3の逃げ溝43が内側領域に設けられた環状の内溝431と、内溝431から外側領域に向かって延設された複数の連通溝432とによりなる点で上記第1実施形態と相違する。本実施形態では、この相違点について主に説明する。 As shown in FIG. 26, the inertial sensor 1 of this embodiment differs from the first embodiment in that the escape groove 43 of the mounting substrate 3 is made up of an annular inner groove 431 provided in the inner region and a plurality of communicating grooves 432 extending from the inner groove 431 toward the outer region. This embodiment will mainly describe this difference.

実装基板3は、本実施形態では、下部基板4に逃げ溝43が形成されている。逃げ溝43は、内側領域にのみ設けられた環状の内溝431と、一端が内溝431に、他端が外側領域にそれぞれ連通する複数の連通溝432とにより構成されている。 In this embodiment, the mounting substrate 3 has an escape groove 43 formed in the lower substrate 4. The escape groove 43 is composed of an annular inner groove 431 provided only in the inner region, and multiple communication grooves 432, one end of which is connected to the inner groove 431 and the other end of which is connected to the outer region.

内溝431は、本実施形態では、例えば図27に示すように、内側領域にのみ形成された溝である。内溝431は、例えば、上面視にて、複数の連通溝432を繋ぐ円環形状の溝となっている。内溝431は、微小振動体2の接合時において、溶融した接合部材52の余剰部分の一部を逃がす溝として機能すると共に、内側領域におけるマウント部を明確にする役割も果たす。 In this embodiment, the inner groove 431 is a groove formed only in the inner region, as shown in FIG. 27, for example. When viewed from above, the inner groove 431 is, for example, a ring-shaped groove connecting multiple communicating grooves 432. The inner groove 431 functions as a groove for allowing some of the excess part of the molten joining material 52 to escape when joining the micro-vibration body 2, and also plays a role in clarifying the mounting part in the inner region.

複数の連通溝432は、例えば図26に示すように、上面視にて、対称配置されている。連通溝432は、例えば図28に示すように、下部基板4において内側領域と外側領域とを連通しており、微小振動体2の接合時において、溶融した接合部材52の余剰部分を内側領域から外側領域に逃がす役割を果たす。連通溝432の数や配置等については、図26に示す例に限定されるものではなく、適宜変更されうる。 The multiple communication grooves 432 are arranged symmetrically in a top view, as shown in FIG. 26, for example. The communication grooves 432 communicate the inner region and the outer region in the lower substrate 4, as shown in FIG. 28, for example, and play a role in allowing excess portions of the molten bonding material 52 to escape from the inner region to the outer region when bonding the micro-vibration body 2. The number and arrangement of the communication grooves 432 are not limited to the example shown in FIG. 26, and can be changed as appropriate.

本実施形態によれば、実装基板3の下部基板4に設けられた逃げ溝43により、微小振動体2の接合時における接合部材52の余剰部分を外側領域および内溝431内に逃がす構成の慣性センサ1となっている。そのため、上記第1実施形態および上記第4実施形態と同様の効果が得られる。 According to this embodiment, the inertial sensor 1 is configured such that the excess portion of the joining material 52 at the time of joining the micro-vibrator 2 escapes into the outer region and the inner groove 431 by the escape groove 43 provided in the lower substrate 4 of the mounting substrate 3. Therefore, the same effects as those of the first and fourth embodiments can be obtained.

(他の実施形態)
本発明は、実施例に準拠して記述されたが、本発明は当該実施例や構造に限定されるものではないと理解される。本発明は、様々な変形例や均等範囲内の変形をも包含する。加えて、様々な組み合わせや形態、さらには、それらの一要素のみ、それ以上、あるいはそれ以下、を含む他の組み合わせや形態をも、本発明の範疇や思想範囲に入るものである。
Other Embodiments
Although the present invention has been described based on the embodiment, it is understood that the present invention is not limited to the embodiment or structure. The present invention also includes various modifications and modifications within the equivalent range. In addition, various combinations and forms, and other combinations and forms including only one element, more than one, or less than one, are also within the scope and concept of the present invention.

例えば、実装基板3は、上記第1実施形態の逃げ溝43と、上記第3実施形態のサイド溝57とを備える構成であってもよい。この場合、実装基板3は、例えば、上面視にて、内周枠511の外側領域側の壁面のうち、下部基板4の逃げ溝43上に位置する部位にサイド溝57が設けられた構成とされ得る。このように、慣性センサ1を構成する実装基板3は、可能な範囲内で、上記各実施形態の構成要素を自由に組み合わせた構成であってもよい。 For example, the mounting substrate 3 may be configured to include the escape groove 43 of the first embodiment and the side groove 57 of the third embodiment. In this case, the mounting substrate 3 may be configured, for example, to include a side groove 57 in a portion of the wall surface on the outer region side of the inner periphery frame 511 that is positioned above the escape groove 43 of the lower substrate 4 when viewed from above. In this way, the mounting substrate 3 constituting the inertial sensor 1 may be configured to freely combine the components of each of the above embodiments to the extent possible.

1・・・慣性センサ、2・・・微小振動体、21・・・曲面部、22・・・凹部、
3・・・実装基板、4・・・下部基板、43・・・逃げ溝、5・・・上部基板、
511・・・内周枠、511a・・・上面、511b・・・下面、512・・・外周枠、
52・・・接合部材、53・・・電極部、55・・・上端溝、56・・・下端溝、
57・・・サイド溝
1: inertial sensor, 2: micro-vibrator, 21: curved surface portion, 22: recessed portion,
3: mounting substrate, 4: lower substrate, 43: relief groove, 5: upper substrate,
511...Inner circumference frame, 511a...Top surface, 511b...Bottom surface, 512...Outer circumference frame,
52: Joint member, 53: Electrode portion, 55: Upper end groove, 56: Lower end groove,
57...Side groove

Claims (10)

慣性センサであって、
環状曲面を備える曲面部(21)および前記曲面部から凹んだ凹部(22)を有する微小振動体(2)と、
前記微小振動体の前記凹部が嵌め込まれる枠体状の内周枠(511)と、前記内周枠を囲む枠体状の外周枠(512)と、互いに距離を隔てつつ、前記外周枠を囲む配置とされる複数の電極部(53)とを有してなる上部基板(5)が、下部基板(4)に接合されてなる実装基板(3)と、
少なくとも一部が前記内周枠の内側に配置され、前記微小振動体と前記実装基板とを接合する接合部材(52)と、を備え、
前記微小振動体は、前記曲面部が中空状態となっており、
前記実装基板は、前記下部基板のうち前記内周枠の内側の領域、および前記内周枠の少なくとも一方に設けられ、前記内周枠の内側に配置される前記接合部材の余剰部分が流れ込む逃げ溝(43、55、56)を有する、慣性センサ。
An inertial sensor,
A micro-vibration body (2) having a curved surface portion (21) having an annular curved surface and a recessed portion (22) recessed from the curved surface portion;
a mounting substrate (3) formed by bonding an upper substrate (5) to a lower substrate (4); the upper substrate (5) has an inner frame (511) in the shape of a frame body into which the recess of the micro-vibrator is fitted, an outer frame (512) in the shape of a frame body surrounding the inner frame, and a plurality of electrode portions (53) arranged to surround the outer frame while being spaced apart from each other;
a joining member (52) at least a portion of which is disposed inside the inner peripheral frame and which joins the micro-vibrator and the mounting substrate;
The micro-vibrator has a hollow curved surface,
The mounting substrate has an escape groove (43, 55, 56) provided in at least one of the inner region of the lower substrate and the inner frame, into which an excess portion of the joining member arranged inside the inner frame flows.
前記逃げ溝は、前記内周枠で囲まれた領域と、前記外周枠と前記内周枠との間の領域とを繋いでいる、請求項1に記載の慣性センサ。 The inertial sensor according to claim 1, wherein the clearance groove connects the area surrounded by the inner peripheral frame with the area between the outer peripheral frame and the inner peripheral frame. 前記逃げ溝は、前記下部基板の一部であって、前記内周枠を跨ぐ配置とされている、請求項1または2に記載の慣性センサ。 The inertial sensor according to claim 1 or 2, wherein the escape groove is part of the lower substrate and is arranged to straddle the inner peripheral frame. 前記逃げ溝は、前記内周枠に設けられている、請求項1または2に記載の慣性センサ。 The inertial sensor according to claim 1 or 2, wherein the escape groove is provided in the inner peripheral frame. 前記逃げ溝は、前記内周枠のうち前記下部基板と向き合う下面(511b)に設けられた下端溝(56)である、請求項4に記載の慣性センサ。 The inertial sensor according to claim 4, wherein the escape groove is a lower end groove (56) provided on the lower surface (511b) of the inner peripheral frame that faces the lower substrate. 前記内周枠は、前記下面とは反対側の上面(511a)と前記下面とを繋ぐ方向に沿って設けられたサイド溝(57)を有し、
前記サイド溝は、一端が前記下端溝に連通している、請求項5に記載の慣性センサ。
The inner peripheral frame has a side groove (57) provided along a direction connecting an upper surface (511a) opposite to the lower surface and the lower surface,
The inertial sensor according to claim 5 , wherein one end of the side groove is in communication with the lower end groove.
前記逃げ溝は、前記内周枠のうち前記下部基板と向き合う下面(511b)とは反対側の上面(511a)に設けられた上端溝(55)である、請求項4に記載の慣性センサ。 The inertial sensor according to claim 4, wherein the escape groove is an upper end groove (55) provided on the upper surface (511a) of the inner peripheral frame opposite the lower surface (511b) facing the lower substrate. 前記内周枠は、円環形状である、請求項1ないし7のいずれか1つに記載の慣性センサ。 The inertial sensor according to any one of claims 1 to 7, wherein the inner frame is annular. 環状曲面を備える曲面部(21)および前記曲面部から凹んだ凹部(22)を有する微小振動体(2)と、
下部基板(4)と、前記微小振動体の前記凹部が嵌め込まれる枠体状の内周枠(511)を有し、前記下部基板に接合される上部基板(5)と、によりなり、接合部材(52)を介して前記内周枠の内側領域に前記微小振動体の前記凹部が接合される実装基板(3)と、を備え、
前記微小振動体が前記内周枠に搭載されたとき、前記曲面部が中空状態となる慣性センサ(1)の製造方法であって、
前記微小振動体を用意することと、
前記実装基板を用意することと、
前記実装基板のうち前記内周枠の内側領域に前記接合部材を配置することと、
前記接合部材を配置した後、前記内周枠の内側領域に、前記微小振動体のうち前記凹部を嵌め込み、前記接合部材と前記微小振動体の前記凹部とを接触させることと、
前記実装基板を加熱して前記接合部材を溶融させ、固化させることで、前記微小振動体を前記実装基板に接合することと、を含み、
前記実装基板を用意することにおいては、前記内周枠を囲む枠体状の外周枠(512)と、互いに距離を隔てつつ、前記外周枠を囲む配置とされる複数の電極部(53)と、前記下部基板のうち少なくとも前記内周枠の内側領域または前記内周枠に設けられる逃げ溝(43、55、56)と、を有する前記実装基板を用意し、
前記微小振動体を接合することにおいては、前記微小振動体の前記凹部を前記下部基板の側に押圧し、溶融した前記接合部材のうち余剰部分を前記逃げ溝に押し出す、慣性センサの製造方法。
A micro-vibration body (2) having a curved surface portion (21) having an annular curved surface and a recessed portion (22) recessed from the curved surface portion;
a mounting substrate (3) including a lower substrate (4), an upper substrate (5) having a frame-shaped inner peripheral frame (511) into which the recess of the micro-vibrator is fitted and joined to the lower substrate, and the recess of the micro-vibrator is joined to an inner region of the inner peripheral frame via a joining member (52);
A manufacturing method for an inertial sensor (1) in which the curved surface portion is in a hollow state when the micro-vibrator is mounted on the inner peripheral frame, comprising:
preparing the micro-vibrator;
providing the mounting substrate;
disposing the bonding member on the mounting substrate in an inner region of the inner peripheral frame;
After arranging the bonding member, the recess of the micro-vibration body is fitted into the inner region of the inner periphery frame to bring the bonding member into contact with the recess of the micro-vibration body;
and heating the mounting substrate to melt and solidify the bonding material, thereby bonding the micro-vibrator to the mounting substrate;
In preparing the mounting substrate, the mounting substrate is provided with a frame-shaped outer peripheral frame (512) surrounding the inner peripheral frame, a plurality of electrode portions (53) arranged to surround the outer peripheral frame while being spaced apart from each other, and a clearance groove (43, 55, 56) provided in at least the inner region of the inner peripheral frame or in the inner peripheral frame of the lower substrate;
In the method for manufacturing an inertial sensor, in bonding the micro-vibrator, the recess of the micro-vibrator is pressed against the lower substrate, and an excess portion of the molten bonding material is pushed out into the relief groove.
前記接合部材を配置することにおいては、AuSnを主成分とする導電性材料を成形してなる板状部材を前記内側領域に配置する、請求項9に記載の慣性センサの製造方法。 The method for manufacturing an inertial sensor according to claim 9, wherein, in disposing the joining member, a plate-shaped member formed from a conductive material mainly composed of AuSn is disposed in the inner region.
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