JP7604247B2 - Substrate support, plasma processing system and method for mounting an annular member - Google Patents

Description

The present disclosure relates to a substrate support, a plasma processing system, and a method for mounting an annular member.

Patent Document 1 discloses a substrate processing apparatus that performs plasma processing on a substrate placed in a processing chamber and a focus ring surrounding the substrate. This substrate processing apparatus includes a mounting table equipped with a susceptor having a substrate mounting surface on which the substrate is mounted and a focus ring mounting surface on which the focus ring is mounted, and multiple positioning pins. The positioning pins are pin-shaped and made of a material that expands radially when heated, and are attached to the focus ring so as to protrude from its lower surface and are inserted into positioning holes formed in the focus ring mounting surface of the susceptor, and position the focus ring by expanding radially when heated and fitting into the holes. The substrate processing apparatus disclosed in Patent Document 1 also includes a lifter pin and a transport arm. The lifter pins are provided on the mounting table so as to protrude and retract from the focus ring mounting surface, and lift the focus ring together with the positioning pins to detach it from the focus ring mounting surface. The transfer arm is installed outside the processing chamber and transfers the focus ring with the positioning pins still attached between the lifter pins through a loading/unloading port installed in the processing chamber.

JP 2011-54933 A

The technology disclosed herein positions and properly places the annular member on the support surface of the substrate support stand that supports the annular member.

One aspect of the present disclosure is a substrate support table having a substrate mounting surface on which a substrate is mounted, an annular member mounting surface on which an annular member is mounted, the annular member being disposed so as to surround a substrate held on the substrate mounting surface, three or more lifters configured to be protruding from the annular member mounting surface and raised and lowered so as to freely adjust the amount of protrusion from the annular member mounting surface, and a lifting mechanism for raising and lowering the lifters, wherein an upwardly recessed portion is provided at a position on a bottom surface of the annular member corresponding to each of the lifters, and in a plan view, the recessed portion is larger than a conveyance accuracy of the annular member above the annular member mounting surface and is larger than an upper end portion of the lifter, and the upper end portion of the lifter is gradually tapered toward the top. the recess is formed so as to gradually narrow upward, the annular member is both an edge ring arranged adjacent to a substrate placed on the substrate mounting surface, and a covering ring covering the outer surface of the edge ring, the recess is formed in a bottom surface of the edge ring of the edge ring and the covering ring has a through hole leading to the recess of the edge ring and through which the lifter is inserted, the lifter has an edge ring support portion at an upper end thereof that engages with the recess of the edge ring and supports the edge ring, and has a covering ring support portion below the edge ring support portion .

According to the present disclosure, the annular member can be positioned and appropriately placed on the support surface of the substrate support stand that supports the annular member.

1 is a plan view showing an outline of a configuration of a plasma processing system in accordance with a first embodiment; FIG. 2 is a vertical cross-sectional view showing an outline of the configuration of the processing module of FIG. 1 . FIG. 3 is a partially enlarged view of FIG. 2 . 3 is a partial cross-sectional view of a portion different from FIG. 2 in the circumferential direction of the wafer support table. 11A and 11B are diagrams illustrating the state inside a processing module during an edge ring attachment process. 11A and 11B are diagrams illustrating the state inside a processing module during an edge ring attachment process. 11A and 11B are diagrams illustrating the state inside a processing module during an edge ring attachment process. 13A and 13B are diagrams for explaining other examples of lift pins. 11A and 11B are diagrams for explaining another example of an electrostatic chuck. 11 is a partially enlarged cross-sectional view showing the outline of the configuration of a wafer support stage serving as a substrate support stage in accordance with a second embodiment. FIG. 13 is a partially enlarged cross-sectional view showing the outline of the configuration of a wafer support stage serving as a substrate support stage in accordance with a third embodiment. FIG. 13 is a partially enlarged cross-sectional view showing the outline of the configuration of a wafer support stage serving as a substrate support stage in accordance with a fourth embodiment. FIG. FIG. 13 is a schematic diagram showing the state inside the processing module during the edge ring removal process of FIG. 12 . FIG. 13 is a schematic diagram showing the state inside the processing module during the edge ring removal process of FIG. 12 . FIG. 13 is a schematic diagram showing the state inside the processing module during the edge ring removal process of FIG. 12 . FIG. 13 is a schematic diagram showing the state inside the processing module during the edge ring removal process of FIG. 12 . FIG. 13 is a schematic diagram showing the state inside the processing module during the edge ring removal process of FIG. 12 . FIG. 13 is a schematic diagram showing the state inside the processing module during the edge ring removal process of FIG. 12 . 13 is a partially enlarged cross-sectional view showing the outline of the configuration of a wafer support stage serving as a substrate support stage in accordance with a fifth embodiment. FIG. 13A and 13B are diagrams showing modified examples of an edge ring and a cover ring. 13A and 13B are diagrams showing other modified examples of the edge ring and the cover ring. 20 shows the surroundings of the wafer support pedestal of FIG. 19 during the process of attaching both the edge ring and the cover ring. 20 shows the surroundings of the wafer support pedestal of FIG. 19 during the process of attaching both the edge ring and the cover ring. 20 shows the surroundings of the wafer support pedestal of FIG. 19 during the process of attaching both the edge ring and the cover ring. 20 is a diagram showing the state around the wafer support table of FIG. 19 during the process of removing the edge ring alone. 20 is a diagram showing the state around the wafer support table of FIG. 19 during the process of removing the edge ring alone. 20 is a diagram showing the state around the wafer support table of FIG. 19 during the process of removing the edge ring alone. 20 is a diagram showing the state of the periphery of the wafer support table of FIG. 19 during the process of removing the cover ring alone.

In the manufacturing process of semiconductor devices, etc., plasma processing such as etching and film formation is performed on substrates such as semiconductor wafers (hereinafter referred to as "wafers") using plasma. The plasma processing is performed with the wafer held on a substrate support table installed in a processing chamber that can be depressurized.

In addition, in order to obtain good and uniform processing results at the center and periphery of the substrate during plasma processing, an annular member called an edge ring or focus ring may be placed around the periphery of the substrate on the substrate support table. When an edge ring is used, the edge ring is positioned with high precision so that uniform processing results can be obtained in the circumferential direction at the periphery of the substrate. For example, in Patent Document 1, the edge ring is positioned using a positioning pin that is attached to the edge ring so as to protrude from its underside and is inserted into a positioning hole formed in the edge ring mounting surface.

When an edge ring becomes worn, it is generally replaced by an operator, but it is also possible to use a transport device to transport the edge ring. For example, in Patent Document 1, the edge ring is replaced using lifter pins that are provided to protrude from and retract from the edge ring mounting surface of the mounting table and lift the edge ring to detach it from the edge ring mounting surface, and a transport arm that can transport both the wafer and the edge ring in and out of the processing chamber.

However, when replacing the edge ring using a transport device, if the transport accuracy of the edge ring is poor, part of the edge ring may get caught on the substrate mounting surface of the substrate support stand, making it impossible to properly mount the edge ring on the edge ring mounting surface of the substrate support stand. For example, if the difference between the inner diameter of the edge ring and the diameter of the substrate mounting surface is smaller than the transport accuracy (transport error) of the edge ring, and the position of the substrate mounting surface is higher than the position of the edge ring mounting surface, the inner side of the edge ring may get caught on the substrate mounting surface, making it impossible to mount the edge ring on the edge ring mounting surface.

In addition, during plasma processing, an annular member called a cover ring may be placed to cover the circumferential outer surface of the edge ring. In this case, too, if a transport device is used to replace the cover ring, it may not be possible to accurately place the cover ring on the mounting surface for the cover ring.

The technology disclosed herein positions and properly places the annular member on the mounting surface of the substrate support stand for the annular member, regardless of the accuracy with which the annular member is transported.

The substrate support table, plasma processing system, and edge ring replacement method according to this embodiment will be described below with reference to the drawings. Note that in this specification and the drawings, elements having substantially the same functional configurations are designated by the same reference numerals, and duplicated descriptions will be omitted.

First Embodiment
FIG. 1 is a plan view showing an outline of the configuration of a plasma processing system in accordance with a first embodiment.
In the plasma processing system 1 of FIG. 1, plasma processing such as etching, film formation, diffusion, etc. is performed on a wafer W as a substrate by using plasma.

As shown in FIG. 1, the plasma processing system 1 has an atmospheric section 10 and a reduced pressure section 11, which are connected together via load lock modules 20 and 21. The atmospheric section 10 includes an atmospheric module that performs a desired process on a wafer W in an atmospheric pressure environment. The reduced pressure section 11 includes a reduced pressure module that performs a desired process on a wafer W in a reduced pressure environment.

The load lock modules 20, 21 are provided to connect a loader module 30 (described later) in the atmospheric section 10 and a transfer module 50 (described later) in the reduced pressure section 11 via a gate valve (not shown). The load lock modules 20, 21 are configured to temporarily hold a wafer W. The load lock modules 20, 21 are also configured so that the interior can be switched between an atmospheric pressure atmosphere and a reduced pressure atmosphere (vacuum state).

The atmospheric section 10 has a loader module 30 equipped with a transport device 40 (described later), and a load port 32 on which FOUPs 31a and 31b are placed. FOUP 31a is capable of storing multiple wafers W, and FOUP 31b is capable of storing multiple edge rings F. Note that an orienter module (not shown) for adjusting the horizontal orientation of the wafers W and edge rings F, and a storage module (not shown) for storing multiple wafers W may be provided adjacent to the loader module 30.

The loader module 30 is made up of a rectangular housing, and the interior of the housing is maintained at atmospheric pressure. Multiple load ports 32, for example five load ports 32, are arranged side by side on one side that constitutes the long side of the loader module 30 housing. Load lock modules 20 and 21 are arranged side by side on the other side that constitutes the long side of the loader module 30 housing.

Inside the loader module 30, a transport device 40 is provided for transporting the wafer W or edge ring F. The transport device 40 has a transport arm 41 that moves while supporting the wafer W or edge ring F, a rotating table 42 that rotatably supports the transport arm 41, and a base 43 on which the rotating table 42 is mounted. Inside the loader module 30, a guide rail 44 is provided that extends in the longitudinal direction of the loader module 30. The base 43 is provided on the guide rail 44, and the transport device 40 is configured to be movable along the guide rail 44.

The decompression section 11 has a transfer module 50 that transports the wafer W and the edge ring F, and a processing module 60 that serves as a plasma processing apparatus that performs the desired plasma processing on the wafer W transported from the transfer module 50. The interiors of the transfer module 50 and the processing module 60 are each maintained in a reduced pressure atmosphere. A plurality of processing modules 60, for example, eight processing modules 60, are provided for one transfer module 50. Note that the number and arrangement of the processing modules 60 are not limited to this embodiment and can be set arbitrarily, as long as there is at least one processing module that requires replacement of the edge ring F.

The transfer module 50 is made of a housing with a polygonal shape (pentagonal shape in the illustrated example) inside, and is connected to the load lock modules 20 and 21 as described above. The transfer module 50 transports the wafer W loaded into the load lock module 20 to one of the processing modules 60, and transports the wafer W that has been subjected to the desired plasma processing in the processing module 60 to the atmospheric section 10 via the load lock module 21. The transfer module 50 also transports the edge ring F loaded into the load lock module 20 to one of the processing modules 60, and transports the edge ring F to be replaced in the processing module 60 to the atmospheric section 10 via the load lock module 21.

The processing module 60 performs plasma processing such as etching, film formation, and diffusion on the wafer W using plasma. The processing module 60 can be selected arbitrarily to perform the desired plasma processing. The processing module 60 is also connected to the transfer module 50 via a gate valve 61. The configuration of this processing module 60 will be described later.

Inside the transfer module 50, a transport device 70 is provided for transporting the wafer W and edge ring F. The transport device 70 has a transport arm 71 as a support part that supports and moves the wafer W and edge ring F, a rotating table 72 that rotatably supports the transport arm 71, and a base 73 on which the rotating table 72 is mounted. Inside the transfer module 50, a guide rail 74 is provided that extends in the longitudinal direction of the transfer module 50. The base 73 is provided on the guide rail 74, and the transport device 70 is configured to be movable along the guide rail 74.

In the transfer module 50, the wafer W and edge ring F held in the load lock module 20 are received by the transfer arm 71 and transferred into the processing module 60. Also, the wafer W and edge ring F held in the processing module 60 are received by the transfer arm 71 and transferred out to the load lock module 21.

Further, the plasma processing system 1 has a controller 80. In one embodiment, the controller 80 processes computer-executable instructions that cause the plasma processing system 1 to perform the various steps described in this disclosure. The controller 80 may be configured to control each of the other elements of the plasma processing system 1 to perform the various steps described herein. In one embodiment, some or all of the controller 80 may be included in the other elements of the plasma processing system 1. The controller 80 may include, for example, a computer 90. The computer 90 may include, for example, a processing unit (CPU: Central Processing Unit) 91, a memory unit 92, and a communication interface 93. The processing unit 91 may be configured to perform various control operations based on a program stored in the memory unit 92. The storage unit 92 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), a SSD (Solid State Drive), or a combination thereof. The communication interface 93 may communicate with other elements of the plasma processing system 1 via a communication line such as a LAN (Local Area Network).

Next, we will explain the wafer processing performed using the plasma processing system 1 configured as described above.

First, the transfer device 40 removes the wafer W from the desired FOUP 31a and loads it into the load lock module 20. Once the wafer W has been loaded into the load lock module 20, the inside of the load lock module 20 is sealed and depressurized. After that, the inside of the load lock module 20 is connected to the inside of the transfer module 50.

Next, the wafer W is held by the transfer device 70 and transferred from the load lock module 20 to the transfer module 50.

Next, the gate valve 61 is opened, and the wafer W is loaded into the desired processing module 60 by the transfer device 70. Thereafter, the gate valve 61 is closed, and the desired processing is performed on the wafer W in the processing module 60. The processing performed on the wafer W in this processing module 60 will be described later.

Next, the gate valve 61 is opened, and the wafer W is removed from the processing module 60 by the transfer device 70. After that, the gate valve 61 is closed.

Next, the wafer W is loaded into the load lock module 21 by the transfer device 70. When the wafer W is loaded into the load lock module 21, the inside of the load lock module 21 is sealed and opened to the atmosphere. After that, the inside of the load lock module 21 and the inside of the loader module 30 are connected to each other.

Next, the wafer W is held by the transfer device 40 and returned from the load lock module 21 via the loader module 30 to the desired FOUP 31a where it is stored. This completes the series of wafer processing steps in the plasma processing system 1.

When replacing the edge ring, the transport of the edge ring between FOUP 31b and the desired processing module 60 is performed in the same manner as the transport of the wafer between FOUP 31a and the desired processing module 60 during the wafer processing described above.

Next, the processing module 60 will be described with reference to Figures 2 to 4. Figure 2 is a vertical cross-sectional view showing an outline of the configuration of the processing module 60. Figure 3 is a partially enlarged view of Figure 2. Figure 4 is a partial cross-sectional view of a portion different from Figure 2 in the circumferential direction of the wafer support table 101 described below.

As shown in FIG. 2, the processing module 60 includes a plasma processing chamber 100 as a processing vessel, a gas supply unit 130, an RF (Radio Frequency) power supply unit 140, and an exhaust system 150. The processing module 60 also includes a gas supply unit 120 (see FIG. 4), which will be described later. The processing module 60 further includes a wafer support table 101 as a substrate support table, and an upper electrode showerhead 102.

The wafer support 101 is disposed in a lower region of the plasma processing space 100s in the plasma processing chamber 100, which is configured to be depressurized. The upper electrode showerhead 102 is disposed above the wafer support 101 and can function as part of the ceiling of the plasma processing chamber 100.

The wafer support 101 is configured to support a wafer W in the plasma processing space 100s. In one embodiment, the wafer support 101 includes a lower electrode 103, an electrostatic chuck 104, an insulator 105, lift pins 106, and lift pins 107 as a lifter. Although not shown, in one embodiment, the wafer support 101 may include a temperature control module configured to adjust at least one of the electrostatic chuck 104 and the wafer W to a target temperature. The temperature control module may include a heater, a flow path, or a combination thereof. A temperature control fluid such as a refrigerant or a heat transfer gas flows through the flow path.

The lower electrode 103 is formed of a conductive material such as aluminum. In one embodiment, the temperature control module described above may be provided in the lower electrode 103.

The electrostatic chuck 104 is a member configured to be able to attract and hold both the wafer W and the edge ring F by electrostatic force, and is provided on the lower electrode 103. The electrostatic chuck 104 is formed such that the upper surface of the central portion is higher than the upper surface of the peripheral portion. The upper surface 104a of the central portion of the electrostatic chuck 104 serves as a substrate mounting surface on which the wafer W is mounted, and the upper surface 104b of the peripheral portion of the electrostatic chuck 104 serves as an annular member mounting surface on which the edge ring F as an annular member is mounted. The edge ring F is an annular member that is disposed so as to surround the wafer W mounted on the upper surface 104a of the central portion of the electrostatic chuck 104.

An electrode 108 for attracting and holding the wafer W is provided in the center of the electrostatic chuck 104, and an electrode 109 for attracting and holding the edge ring F is provided on the periphery of the electrostatic chuck 104. The electrostatic chuck 104 has a configuration in which the electrodes 108 and 109 are sandwiched between insulating materials made of insulating material.

A DC voltage is applied to the electrode 108 from a DC power supply (not shown). The resulting electrostatic force attracts and holds the wafer W on the upper surface 104a at the center of the electrostatic chuck 104. Similarly, a DC voltage is applied to the electrode 109 from a DC power supply (not shown). The resulting electrostatic force attracts and holds the edge ring F on the upper surface 104b at the periphery of the electrostatic chuck 104. The electrode 109 is a bipolar type including a pair of electrodes 109a, 109b, as shown in FIG. 3 .
In this embodiment, the central portion of the electrostatic chuck 104 where the electrode 108 is provided and the peripheral portion where the electrode 109 is provided are integrated, but the central portion and the peripheral portion may be separate.
In addition, in this embodiment, the electrode 109 for attracting and holding the edge ring F is a bipolar type, but it may be a unipolar type.

In addition, the central portion of the electrostatic chuck 104 is formed, for example, with a diameter smaller than the diameter of the wafer W, so that when the wafer W is placed on the upper surface 104a, as shown in FIG. 2, the peripheral portion of the wafer W protrudes from the central portion of the electrostatic chuck 104.
The edge ring F has a step formed on its upper portion, and the upper surface of the outer periphery is higher than the upper surface of the inner periphery. The inner periphery of the edge ring F is formed to be recessed under the peripheral edge of the wafer W that protrudes from the center of the electrostatic chuck 104. In other words, the inner diameter of the edge ring F is smaller than the outer diameter of the wafer W.

The insulator 105 is a cylindrical member made of ceramic or the like, and supports the electrostatic chuck 104. The insulator 105 is formed, for example, to have an outer diameter equal to the outer diameter of the lower electrode 103, and supports the peripheral portion of the lower electrode 103. The insulator 105 is also arranged so that its inner peripheral surface is positioned radially outward of the electrostatic chuck 104 from the lifting mechanism 114 described below.

The lift pins 106 are columnar members that rise and fall so as to protrude and sink from the top surface 104a at the center of the electrostatic chuck 104, and are formed, for example, from ceramic. Three or more lift pins 106 are provided at intervals from each other along the circumferential direction of the electrostatic chuck 104, i.e., along the circumferential direction of the top surface 104a. The lift pins 106 are provided, for example, at equal intervals along the circumferential direction. The lift pins 106 are provided to extend in the vertical direction.

The lifting pins 106 are connected to a lifting mechanism 110 that raises and lowers the lifting pins 106. The lifting mechanism 110 has, for example, a support member 111 that supports the multiple lifting pins 106, and a drive unit 112 that generates a driving force that raises and lowers the support member 111 and raises and lowers the multiple lifting pins 106. The drive unit 112 has a motor (not shown) that generates the driving force.

The lifting pin 106 is inserted into a through hole 113 that extends downward from the upper surface 104a of the center of the electrostatic chuck 104 to the bottom surface of the lower electrode 103. In other words, the through hole 113 is formed to penetrate the center of the electrostatic chuck 104 and the lower electrode 103.

The lift pins 107 are columnar members that rise and fall so as to protrude and sink from the upper surface 104b of the peripheral portion of the electrostatic chuck 104, and are formed of, for example, alumina, quartz, SUS, or the like. Three or more lift pins 107 are provided at intervals from each other along the circumferential direction of the electrostatic chuck 104, i.e., along the circumferential direction of the upper surface 104a of the central portion and the upper surface 104b of the peripheral portion. The lift pins 107 are provided, for example, at equal intervals along the circumferential direction. The lift pins 107 are provided to extend in the vertical direction.
The lift pin 107 has a thickness of, for example, 1 to 3 mm.

The lifting pins 107 are connected to a lifting mechanism 114 that drives the lifting pins 107. The lifting mechanism 114 has, for example, a support member 115 that is provided for each lifting pin 107 and supports the lifting pins 107 so that they can move horizontally. The support member 115 has, for example, a thrust bearing to support the lifting pins 107 so that they can move horizontally. The lifting mechanism 114 also has a drive unit 116 that generates a driving force to raise and lower the support member 111 and raise and lower the lifting pins 107. The drive unit 116 has a motor (not shown) that generates the driving force.

The lift pins 107 are inserted into through holes 117 that extend downward from an upper surface 104b of the peripheral portion of the electrostatic chuck 104 to the bottom surface of the lower electrode 103. In other words, the through holes 117 are formed so as to penetrate the peripheral portion of the electrostatic chuck 104 and the lower electrode 103.
The through-hole 117 is formed with a positional accuracy higher than at least the transportation accuracy of the edge ring by the transportation device 70 .

The lift pins 107 are formed, for example, in a cylindrical shape except for their upper ends, which are formed in a semi-spherical shape that gradually tapers upward. When raised, the upper ends of the lift pins 107 come into contact with the bottom surface of the edge ring F to support the edge ring F. At positions on the bottom surface of the edge ring F corresponding to each of the lift pins 107, as shown in FIG. 3, recesses F1 are provided, which are formed from a concave surface F1a that is recessed upward.

In a plan view, the size D1 of the recess F1 (the opening diameter) of the edge ring F is greater than the transport accuracy (error) (±X μm) of the edge ring F by the transport device 70 above the upper surface 104b of the electrostatic chuck 104, and is greater than the size D2 of the upper end of the lift pin 107. For example, the relationships D1>D2 and D1>2X are satisfied, and D1 is approximately 0.5 mm. In another example, D1 may be 0.5 to 3 mm.

Furthermore, as described above, the upper end of the lift pin 107 is formed in a semi-spherical shape that gradually narrows toward the top, and the concave surface F1a that forms the recess F1 of the edge ring F is set to have a smaller curvature than the convex surface (i.e., the upper end surface) 107a that forms the semi-spherical shape of the upper end of the lift pin 107. In other words, the concave surface F1a has a larger radius of curvature than the convex surface 107a.

When the thickness of the outer periphery of the edge ring F is 3 to 5 mm, the depth of the recess F1 is set to, for example, 0.5 to 1 mm.
The edge ring F is made of a material such as Si or SiC.

4, a heat transfer gas supply path 118 is formed on the upper surface 104b of the peripheral portion of the electrostatic chuck 104. The heat transfer gas supply path 118 supplies a heat transfer gas, such as helium gas, to the back surface of the edge ring F placed on the upper surface 104b. The heat transfer gas supply path 118 is provided so as to be fluidly connected to the upper surface 104b. The heat transfer gas supply path 118 is also fluidly connected to a gas supply unit 120 on the side opposite to the upper surface 104b. The gas supply unit 120 may include one or more gas sources 121 and one or more flow rate controllers 122. In one embodiment, the gas supply unit 120 is configured to supply gas from the gas source 121 to the heat transfer gas supply path via the flow rate controller 122, for example. Each flow rate controller 122 may include, for example, a mass flow controller or a pressure-controlled flow rate controller.
Although not shown in the figure, a heat transfer gas supply path similar to the heat transfer gas supply path 118 is also formed on the upper surface 104a in the central portion of the electrostatic chuck 104 in order to supply a heat transfer gas to the back surface of the wafer W placed on the upper surface 104a.
Furthermore, an intake passage may be formed to vacuum-suck the edge ring F placed on the upper surface 104b of the peripheral portion of the electrostatic chuck 104. The intake passage is provided in the electrostatic chuck 104, for example, so as to be in fluid communication with the upper surface 104b. The above-mentioned heat transfer gas supply passage and the intake passage may be entirely or partially common to each other.

Returning to the description of FIG. 2, the upper electrode showerhead 102 is configured to supply one or more process gases from the gas supply 130 to the plasma processing space 100s. In one embodiment, the upper electrode showerhead 102 has a gas inlet 102a, a gas diffusion chamber 102b, and multiple gas outlets 102c. The gas inlet 102a is, for example, in fluid communication with the gas supply 130 and the gas diffusion chamber 102b. The multiple gas outlets 102c are in fluid communication with the gas diffusion chamber 102b and the plasma processing space 100s. In one embodiment, the upper electrode showerhead 102 is configured to supply one or more process gases from the gas inlet 102a through the gas diffusion chamber 102b and the multiple gas outlets 102c to the plasma processing space 100s.

The gas supply 130 may include one or more gas sources 131 and one or more flow controllers 132. In one embodiment, the gas supply 130 is configured to supply, for example, one or more process gases from respective gas sources 131 to the gas inlet 102a via respective flow controllers 132. Each flow controller 132 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply 130 may include one or more flow modulation devices to modulate or pulse the flow rate of one or more process gases.

The RF power supply 140 is configured to supply RF power, e.g., one or more RF signals, to one or more electrodes, such as the lower electrode 103, the upper electrode showerhead 102, or both the lower electrode 103 and the upper electrode showerhead 102. This generates a plasma from one or more process gases supplied to the plasma processing space 100s. Thus, the RF power supply 140 may function as at least a part of a plasma generating unit configured to generate a plasma from one or more process gases in the plasma processing chamber. The RF power supply 140 includes, for example, two RF generating units 141a, 141b and two matching circuits 142a, 142b. In one embodiment, the RF power supply 140 is configured to supply a first RF signal from the first RF generating unit 141a through the first matching circuit 142a to the lower electrode 103. For example, the first RF signal may have a frequency in the range of 27 MHz to 100 MHz.

In one embodiment, the RF power supply unit 140 is configured to supply a second RF signal from the second RF generating unit 141b to the lower electrode 103 via the second matching circuit 142b. For example, the second RF signal may have a frequency in the range of 400 kHz to 13.56 MHz. Alternatively, a DC (Direct Current) pulse generating unit may be used in place of the second RF generating unit 141b.

Furthermore, although not shown, other embodiments are contemplated in the present disclosure. For example, in an alternative embodiment, the RF power supply 140 may be configured to supply a first RF signal from an RF generator to the lower electrode 103, a second RF signal from another RF generator to the lower electrode 103, and a third RF signal from yet another RF generator to the lower electrode 103. Additionally, in another alternative embodiment, a DC voltage may be applied to the upper electrode showerhead 102.

Still further, in various embodiments, one or more RF signals (i.e., the first RF signal, the second RF signal, etc.) may be pulsed or modulated in amplitude. Amplitude modulation may include pulsing the RF signal amplitude between an on state and an off state, or between two or more different on states.

The exhaust system 150 may be connected to an exhaust port 100e, for example, at the bottom of the plasma processing chamber 100. The exhaust system 150 may include a pressure valve and a vacuum pump. The vacuum pump may include a turbomolecular pump, a roughing pump, or a combination thereof.

Next, an example of wafer processing performed using the processing module 60 configured as described above will be described. In the processing module 60, processing such as etching, film formation, and diffusion processing is performed on the wafer W.

First, the wafer W is loaded into the plasma processing chamber 100, and the lift pins 106 are raised and lowered to place the wafer W on the electrostatic chuck 104. A DC voltage is then applied to the electrode 108 of the electrostatic chuck 104, so that the wafer W is electrostatically attracted to and held on the electrostatic chuck 104 by electrostatic force. After the wafer W is loaded, the exhaust system 150 reduces the pressure inside the plasma processing chamber 100 to a predetermined vacuum level.

Next, the processing gas is supplied from the gas supply unit 130 to the plasma processing space 100s via the upper electrode shower head 102. In addition, high frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103, which excites the processing gas and generates plasma. At this time, high frequency power LF for ion attraction may also be supplied from the RF power supply unit 140. Then, plasma processing is performed on the wafer W by the action of the generated plasma.

During plasma processing, a heat transfer gas such as He gas or Ar gas is supplied to the bottom surfaces of the wafer W and edge ring F attracted and held by the electrostatic chuck 104 via the heat transfer gas supply path 118, etc.

When plasma processing is terminated, the supply of heat transfer gas to the bottom surface of the wafer W may be stopped. In addition, the supply of high frequency power HF from the RF power supply unit 140 and the supply of processing gas from the gas supply unit 130 are stopped. If high frequency power LF was being supplied during plasma processing, the supply of the high frequency power LF is also stopped. Next, the electrostatic chuck 104 stops attracting and holding the wafer W.

Then, the wafer W is raised by the lift pins 106, and the wafer W is detached from the electrostatic chuck 104. When detaching the wafer W, a discharge process may be performed on the wafer W. The wafer W is then unloaded from the plasma processing chamber 100, and the series of wafer processing steps is completed.

During the wafer processing, the edge ring F is attracted and held by electrostatic force. Specifically, during the plasma processing, and before and after the plasma processing, different voltages are applied to the electrodes 109a and 109b so that a potential difference occurs between the electrodes 109a and 109b. The edge ring F is attracted and held by electrostatic force corresponding to the potential difference generated by this. In contrast, during the plasma processing, the same voltage (e.g., the same positive voltage) is applied to the electrodes 109a and 109b, and a potential difference occurs between the edge ring F, which is at ground potential through the plasma, and the electrodes 109a and 109b. The edge ring F is attracted and held by electrostatic force corresponding to the potential difference generated by this. During the edge ring F is attracted by electrostatic force, the lift pins 107 are recessed from the upper surface 104b of the peripheral portion of the electrostatic chuck 104.

As described above, the edge ring F is attracted and held by electrostatic force, so that no misalignment occurs between the edge ring F and the electrostatic chuck 104 when the supply of heat transfer gas to the bottom surface of the edge ring F begins.

Next, an example of the process of attaching the edge ring F into the processing module 60 using the above-mentioned plasma processing system 1 will be described with reference to Figs. 5 to 7. Figs. 5 to 7 are diagrams that show the state inside the processing module 60 during the attachment process. Note that the following process is performed under the control of the control device 80. Also, the following process is performed, for example, when the electrostatic chuck 104 is at room temperature.

First, the transfer arm 71 holding the edge ring F is inserted through an inlet/outlet (not shown) into the reduced pressure plasma processing chamber 100 of the processing module 60 to which the edge ring F is to be attached from the transfer module 50 in the vacuum atmosphere of the plasma processing system 1. Then, as shown in FIG. 5, the edge ring F held by the transfer arm 71 is transported above the upper surface 104b of the peripheral portion of the electrostatic chuck 104. The edge ring F is held by the transfer arm 71 with its circumferential orientation adjusted.

Next, all the lift pins 107 are raised, and the edge ring F is transferred from the transport arm 71 to the lift pins 107 as shown in FIG. 6. Specifically, all the lift pins 107 are raised, and first, the upper ends of the lift pins 107 come into contact with the bottom surface of the edge ring F held by the transport arm 71. At this time, the upper ends of the lift pins 107 fit into the recesses F1 provided on the bottom surface of the edge ring F. This is because, as described above, the recesses F1 are provided at positions corresponding to the lift pins 107 on the bottom surface of the edge ring F, and the size of the recesses F1 in a plan view is larger than the transport accuracy of the edge ring F by the transport device 70 and larger than the size of the upper ends of the lift pins 107. If the lift pins 107 continue to rise after the upper ends of the lift pins 107 come into contact with the bottom surface of the edge ring F, the edge ring F is transferred to and supported by the lift pins 107 as shown in FIG. 6.

As described above, the concave surface F1a forming the recess F1 of the edge ring F is set to have a smaller curvature than the convex surface 107a forming the hemispherical shape of the upper end of the lift pin 107. Therefore, even if the edge ring F is misaligned with respect to the lift pin 107 immediately after being transferred to the lift pin 107, it moves as follows and is positioned with respect to the lift pin 107. That is, the edge ring F moves so that the top of the upper end of the lift pin 107 slides relatively on the concave surface F1a of the edge ring F. Then, the edge ring F stops at a position where the center of the recess F1 and the center of the upper end of the lift pin 107 coincide in a plan view, that is, where the deepest part of the recess F1 and the top of the upper end of the lift pin 107 coincide in a plan view, and is positioned with respect to the lift pin 107 at that position.

After the edge ring F is handed over to the lift pins 107, in order to facilitate the movement for positioning, each of the lift pins 107 may be moved up and down in small increments, or each of the lift pins 107 may be lowered at a different speed or at a high speed.

After the edge ring F is positioned relative to the lift pins 107, the transport arm 71 is removed from the plasma processing chamber 100 and the lift pins 107 are lowered, thereby placing the edge ring F on the upper surface 104a of the peripheral portion of the electrostatic chuck 104, as shown in FIG. 7.
Since the edge ring F is positioned relative to the lift pins 107 as described above, and the through hole 117 and the lift pins 107 are provided with high precision relative to the center of the electrostatic chuck 104, the edge ring F is placed on the upper surface 104a while being positioned relative to the center of the electrostatic chuck 104.
The lift pins 107 are lowered, for example, until the upper end surfaces of the lift pins 107 are recessed below the upper surface 104 a of the peripheral portion of the electrostatic chuck 104 .

Thereafter, a DC voltage is applied from a DC power supply (not shown) to the electrode 109 provided on the peripheral portion of the electrostatic chuck 104, and the edge ring F is attracted and held on the upper surface 104b by the electrostatic force generated thereby. Specifically, different voltages are applied to the electrodes 109a and 109b, and the edge ring F is attracted and held on the upper surface 104b by the electrostatic force generated according to the potential difference.
This completes the process of attaching the edge ring F.

When the aforementioned air intake path is provided, the edge ring F may be vacuum-adsorbed to the upper surface 104b using the air intake path after it is placed on the upper surface 104b and before it is adsorbed and held by electrostatic force. Then, after switching from vacuum adsorption using the air intake path to adsorption and holding by electrostatic force, the degree of vacuum in the air intake path may be measured, and based on the measurement result, it may be determined whether to place the edge ring F back on the upper surface 104b.

The process of removing the edge ring F is performed in the reverse order to the process of attaching the edge ring F described above.
When removing the edge ring F, a cleaning process may be performed on the edge ring F before the edge ring F is unloaded from the plasma processing chamber 100 .

As described above, the wafer support table 101 according to the present embodiment includes the upper surface 104a on which the wafer W is placed, the upper surface 104b on which the edge ring F is placed so as to surround the wafer W held on the upper surface, three or more lift pins 107 that rise and fall so as to protrude and sink from the upper surface 104b, and a lift mechanism 114 that raises and lowers the lift pins 107. In addition, recesses F1 formed of a concave surface F1a recessed upward are provided at positions on the bottom surface of the edge ring F corresponding to the respective lift pins 107. In addition, in a plan view, the size of the recesses F1 is larger than the conveyance error of the edge ring F above the upper surface 104b and is larger than the size of the upper end of the lift pins 107. Therefore, when the lift pins 107 are raised to abut against the bottom surface of the edge ring F, the upper end of the lift pins 107 can be accommodated in the recesses F1 of the edge ring F. Furthermore, in this embodiment, the upper end of the lift pin 107 is formed in a semi-spherical shape that gradually narrows toward the top, and the concave surface F1a forming the recess F1 has a smaller curvature than the convex surface forming the semi-spherical shape of the upper end of the lift pin 107. Therefore, when the edge ring F is supported by the lift pin 107, the edge ring F can be positioned relative to the lift pin 107 at a position where the deepest part of the recess F1 and the top of the upper end of the lift pin 107 coincide with each other in a plan view. Therefore, when the lift pin 107 supporting the edge ring F is lowered, the lift pin 107 can be positioned relative to the electrostatic chuck 104 and placed on the upper surface 104b. In other words, according to this embodiment, the edge ring F can be positioned and placed relative to the wafer support table 101 regardless of the conveyance accuracy of the edge ring F.
Moreover, if the wafer support table 101 according to the present embodiment is provided in the plasma processing apparatus, the edge ring F can be replaced using the transport device 70 without the intervention of an operator. When an operator replaces the edge ring, the processing vessel in which the edge ring is disposed needs to be opened to the atmosphere. However, if the wafer support table 101 according to the present embodiment is provided, the edge ring F can be replaced using the transport device 70, so that the plasma processing chamber 100 does not need to be opened to the atmosphere during replacement. Therefore, according to the present embodiment, the time required for replacement can be significantly reduced. Furthermore, in the present embodiment, since three or more lift pins are provided, the edge ring F can be aligned in the circumferential direction in addition to the radial direction (the direction from the center of the wafer support table 101 toward the outer periphery).

Furthermore, in this embodiment, a lifting mechanism 114 is provided for each lifting pin 107, and further includes a support member 115 that supports the lifting pin 107 so that it can move freely in the horizontal direction. Therefore, when the electrostatic chuck 104 thermally expands or contracts, the lifting pin 107 can move horizontally in accordance with the thermal expansion or contraction. Therefore, the lifting pin 107 will not be damaged when the electrostatic chuck 104 thermally expands or contracts.

In addition, in this embodiment, after the edge ring F is placed, it is attracted and held by electrostatic force using the electrode 109. Therefore, there is no need to provide protrusions, recesses, etc., on the bottom surface of the edge ring F or on the placement surface of the edge ring F (upper surface 104b of the electrostatic chuck 104) to suppress misalignment of the edge ring F after placement. In particular, since there is no need to provide protrusions, etc., as described above on the upper surface 104b of the electrostatic chuck 104, the configuration of the electrostatic chuck 104 can be prevented from becoming complicated.

Furthermore, in this embodiment, since there are no other components between the electrostatic chuck 104 of the wafer support table 101 and the edge ring F, the cumulative tolerance is small.

FIG. 8 is a diagram for explaining another example of the lift pin.
The lift pin 160 in FIG. 8 has a columnar portion 162 and a connecting portion 163 in addition to an upper end portion 161 formed in a hemispherical shape.

The columnar portion 162 is formed in a columnar shape that is thicker than the upper end portion 161 , and specifically, for example, is formed in a cylindrical shape that is thicker than the upper end portion 161 .
The connecting portion 163 is a portion that connects the upper end portion 161 and the columnar portion 162. This connecting portion is formed in a frustum shape that gradually becomes thinner toward the top, and specifically, for example, is formed in a frustum shape whose lower end has the same diameter as the columnar portion 162 and whose upper end has the same diameter as the upper end portion 161.

By using the lift pins 160, the positioning accuracy of the edge ring F relative to the lift pins 160 can be improved.
In addition, by using the lift pins 107 described above, the recess F1 can be made shallower, so that the edge ring F can be made thinner and lighter.

FIG. 9 is a diagram for explaining another example of the electrostatic chuck.
In the electrostatic chuck 170 of FIG. 9, an insulating guide 180 is provided in the through hole 117 through which the lift pin 107 is inserted.
The guide 180 is, for example, a cylindrical member made of resin, and is fitted into the through hole 117 .
In the electrostatic chuck 170, the lift pins 107 are inserted into guides 180 provided in the through holes 117, and the movement direction of the lift pins 107 when they are raised and lowered is determined in the up-down direction by the guides 180. Therefore, the upper ends of the lift pins 107 are positioned with higher precision relative to the electrostatic chuck 170. Therefore, when the lift pins 107, which position and support the edge ring F, are lowered to place the edge ring F on the upper surface 104b of the electrostatic chuck 170, the edge ring F can be placed on the upper surface 104b in a state where it is positioned with higher precision relative to the electrostatic chuck 170.

Second Embodiment
FIG. 10 is a partially enlarged cross-sectional view showing the outline of the configuration of a wafer support table 200 serving as a substrate support table according to the second embodiment.
In the first embodiment, the edge ring F is the object to be replaced, but in the present embodiment, the cover ring C is the object to be replaced. The cover ring C is an annular member that covers the outer surface of the edge ring F in the circumferential direction.

The wafer support table 200 in FIG. 10 includes a lower electrode 201, an electrostatic chuck 202, a support 203, an insulator 204, and lifting pins 205 serving as a lifter.
2 and the like are provided with a through hole 117 passing therethrough, but the lower electrode 201 and the electrostatic chuck 202 are not provided with a through hole 117. In this respect, the lower electrode 201 and the electrostatic chuck 202 differ from the lower electrode 103 and the electrostatic chuck 104.

The support 203 is a member formed in a ring shape in a planar view using, for example, quartz, and supports the lower electrode 103 as well as the covering C. The upper surface 203a of the support 203 serves as the ring-shaped member mounting surface on which the covering C, which is the ring-shaped member to be replaced, is placed.

The insulator 204 is a cylindrical member made of ceramic or the like, and supports the support 203. The insulator 204 is formed, for example, to have an outer diameter equal to the outer diameter of the support 203, and supports the peripheral portion of the support 203.

2 and the like are inserted into through holes 117 that are provided to penetrate the lower electrode 103 and the electrostatic chuck 104, whereas the lift pins 205 are inserted into through holes 206 that penetrate the support 203 in the vertical direction from the upper surface 203a. In this respect, the lift pins 205 and the lift pins 107 differ. Like the lift pins 107, the lift pins 205 are provided in three or more numbers spaced apart from each other along the circumferential direction of the electrostatic chuck 202.

Like lift pins 107, lift pins 205 have upper ends formed in a semispherical shape that gradually tapers upward. When lift pins 205 are raised, their upper ends come into contact with the bottom surface of covering C to support covering C. At positions on the bottom surface of covering C corresponding to each lift pin 205, recesses C1 are provided that are formed from a concave surface C1a that is recessed upward.

In a plan view, the size of the recess C1 of the covering C is greater than the conveying accuracy of the covering C by the conveying device 70 and is also greater than the size of the upper ends of the lift pins 205.
Furthermore, as described above, the upper end of the lifting pin 205 is formed into a hemispherical shape that gradually becomes thinner toward the top, and the concave surface C1a that forms the recess C1 of the cover ring C is set to have a smaller curvature than the convex surface 205a that forms the above-mentioned hemispherical shape of the upper end of the lifting pin 205.

The process of attaching and removing the cover ring C is similar to the process of attaching and removing the edge ring F in the first embodiment, and therefore a description thereof will be omitted.
2 and the like, the lift pins 107 for the edge ring F are configured to be capable of protruding and retracting from the upper surface 104b of the peripheral portion of the electrostatic chuck 104. When the edge ring F is attracted by electrostatic force, the upper end surfaces of the lift pins 107 are recessed from the upper surface 104a of the peripheral portion of the electrostatic chuck 104. In contrast, the lift pins 205 for the cover ring C do not have to be configured to be capable of protruding and retracting from the upper surface 203a of the support 203 as long as they are configured to be capable of protruding from the upper surface 203a of the support 203 and the amount of protrusion is adjustable. Furthermore, when the edge ring F is attracted by electrostatic force, the upper end surfaces of the lift pins 205 may protrude from the upper surface 203a of the support 203.

Third Embodiment
FIG. 11 is a partially enlarged cross-sectional view showing the outline of the configuration of a wafer support table 300 serving as a substrate support table according to the third embodiment.
In the first embodiment, the edge ring F is the object to be replaced, and in the second embodiment, the covering ring C is the object to be replaced, but in this embodiment, both the edge ring F and the covering ring C are the object to be replaced.

In this embodiment, the edge ring F and the cover ring C are replaced separately. Therefore, the edge ring F is provided with lift pins 107 and through holes 117, and the cover ring C is provided with lift pins 205 and through holes 206. In addition, the aforementioned recesses F1 and C1 are formed on the bottom surface of the edge ring F and the bottom surface of the cover ring C, respectively.

In this embodiment, the processes for attaching and removing the edge ring F and the process for attaching and removing the cover ring C are similar to those for attaching and removing the edge ring F in the first embodiment, and therefore will not be described.

Fourth Embodiment
FIG. 12 is a partially enlarged cross-sectional view showing the outline of the configuration of a wafer support table 400 serving as a substrate support table according to the fourth embodiment.
In the first embodiment, the edge ring F was the target of replacement, in the second embodiment, the covering ring C was the target of replacement, and in the third embodiment, both the edge ring F and the covering ring C were the target of replacement, but in this embodiment, the covering ring Ca supporting the edge ring Fa is the target of replacement.

The wafer support table 400 in FIG. 12 has a lower electrode 401, an electrostatic chuck 402, a support 403, an insulator 404, and lifting pins 405 as a lifter.

The lower electrode 401 and the electrostatic chuck 402 are provided with through holes 406 through which the lift pins 405 are inserted. The through holes 406 are formed to extend downward from the upper surface 402a of the peripheral portion of the electrostatic chuck 402 to the bottom surface of the lower electrode 401.

The support 403 is a member formed in a ring shape in a plan view, for example using quartz, and supports the lower electrode 401.

The upper surface 403a of the support 403 and the upper surface 402a of the peripheral portion of the electrostatic chuck 402 form the annular member mounting surface on which the cover ring Ca supporting the edge ring Fa, which is the annular member to be replaced, is placed.

The insulator 404 is a cylindrical member made of ceramic or the like, and supports the support 403. The insulator 404 is formed, for example, to have an outer diameter equal to the outer diameter of the support 403, and supports the peripheral portion of the support 403.

2, the edge ring Fa has a step formed on its upper portion, the upper surface of the outer periphery being higher than the upper surface of the inner periphery, and the inner diameter of the edge ring Fa is smaller than the outer diameter of the wafer W. Furthermore, the edge ring Fa has a recess Fa1 that is recessed radially inward on the outer periphery of the bottom portion.
On the other hand, the cover ring Ca has a protrusion Ca1 at its bottom that protrudes radially inward. The cover ring Ca supports the edge ring Fa by engagement between the protrusion Ca1 and a recess Fa1.
In order to prevent misalignment between the covering ring Ca and the edge ring Fa, a protrusion may be provided on one of them, and a recess for engaging with the protrusion may be provided on the other. Specifically, as with the covering ring Cb and the edge ring Fb described later with reference to Figures 20 and 21, a recess may be provided on either the upper surface of the inner periphery of the covering ring Ca or the lower surface of the outer periphery of the edge ring Fa, and a protrusion having a shape corresponding to the recess may be provided on the other. Also, the covering ring Ca and the edge ring Fa may be integrated by bonding or joining them with an adhesive or the like.

The lift pins 405 protrude and retract from positions corresponding to the protruding portions Ca of the cover ring Ca on the upper surface 402a of the peripheral portion of the electrostatic chuck 402. Through holes 406 through which the lift pins 405 are inserted are formed at positions corresponding to the protruding portions Ca of the cover ring Ca.
Similar to the lift pins 107 in FIG. 2, three or more lift pins 405 are provided at intervals along the circumferential direction of the electrostatic chuck 402 .

Like lift pins 107, lift pins 405 have upper ends formed in a hemispherical shape that gradually tapers upward. When lifted, the upper ends of lift pins 405 come into contact with the bottom surface of protruding portion Ca1 of covering Ca to support covering C which supports edge ring F. At positions on the bottom surface of protruding portion Ca1 of covering C corresponding to each lift pin 405, recesses Ca2 formed from concave surface Ca2a recessed upward are provided.

In plan view, the size of the recess Ca2 is larger than the conveying accuracy of the covering C by the conveying device 70 and is also larger than the size of the upper end of the lift pin 405.
Furthermore, as described above, the upper end of the lift pin 405 is formed into a hemispherical shape that gradually becomes thinner toward the top, and the concave surface Ca2a that forms the recess Ca2 is set to have a smaller curvature than the convex surface 405a that forms the hemispherical shape of the upper end of the lift pin 405.

The process of attaching and removing the cover ring Ca while supporting the edge ring Fa is the same as the process of attaching and removing the edge ring F in the first embodiment, so a description thereof will be omitted.

According to this embodiment, the edge ring Fa and the cover ring Ca can be replaced at the same time, which further reduces the time required for their replacement. In addition, there is no need to provide separate mechanisms for raising and lowering the edge ring Fa and for raising and lowering the cover ring Ca, which reduces costs.

When using the wafer support table according to this embodiment, it is also possible to remove only the edge ring Fa. The process of removing the edge ring Fa is described below with reference to Figures 13 to 18.

First, all of the lifting pins 405 are raised, and the cover ring C supporting the edge ring F is transferred from the upper surface 402a of the peripheral portion of the electrostatic chuck 402 and the upper surface 403a of the support 403 (hereinafter, the annular member mounting surface) to the lifting pins 405. The lifting pins 405 continue to rise thereafter, and the cover ring Ca supporting the edge ring Fa moves upward, as shown in FIG. 13.

Then, the transfer arm 71 holding the jig J is inserted from the transfer module 50 in the vacuum atmosphere of the plasma processing system 1 into the reduced pressure plasma processing chamber 100 through a loading/unloading port (not shown). Then, as shown in FIG. 14, the jig J held by the transfer arm 71 is moved between the annular member mounting surface and the upper surface 403a of the support body 403 and the cover ring Ca supporting the edge ring Fa. The jig J is a disk-shaped member having approximately the same diameter as the wafer W, i.e., a diameter larger than the inner diameter of the edge ring Fa.

Next, the lift pins 106 are raised, and the jig J is transferred from the transport arm 71 to the lift pins 106, as shown in FIG. 15.

Then, the transport arm 71 is extracted, or retreated, from the plasma processing chamber 100, and then the lift pins 405 and 106 are moved relative to each other; specifically, only the lift pins 405 are lowered. As a result, the edge ring Fa is transferred from the covering ring Ca to the jig J, as shown in FIG. 16. Then, only the lift pins 405 are continued to be lowered, and the covering ring Ca is transferred from the lift pins 405 to the annular member mounting surface.

Next, the transfer arm 71 is inserted into the plasma processing chamber 100 through a loading/unloading port (not shown). Then, as shown in FIG. 17, the transfer arm 71 is moved between the cover ring Ca and the jig J supporting the edge ring Fa.

Next, the lift pins 106 are lowered, and the jig J supporting the edge ring Fa is transferred from the lift pins 106 to the transport arm 71, as shown in FIG. 18.

Then, the transfer arm 71 is extracted from the plasma processing chamber 100 , and the jig J supporting the edge ring Fa is carried out from the plasma processing chamber 100 .
This completes a series of processes for removing only the edge ring Fa.

The process for attaching only the edge ring Fa is performed in the reverse order to the process for removing only the edge ring Fa described above.

Fifth Embodiment
FIG. 19 is a partially enlarged cross-sectional view showing the outline of the configuration of a wafer support table 500 serving as a substrate support table according to the fifth embodiment.
In this embodiment, both an edge ring and a cover ring are used, as in the third and fourth embodiments. Also, in this embodiment, as in the fourth embodiment, the edge ring and the cover ring can be replaced simultaneously, and only the edge ring or only the cover ring can be replaced. However, in this embodiment, when only the edge ring is replaced, a jig such as that used in the fourth embodiment is not required.

The wafer support table 500 in FIG. 19 has a lower electrode 501, an electrostatic chuck 502, a support 503, and lifting pins 504 as an example of a lifter.

The support 503, like the support 403 in the example of FIG. 12, is a member formed in a ring shape in a planar view using, for example, quartz, and supports the lower electrode 501. However, in the example of FIG. 12, the support 403 is provided so as not to overlap the lower electrode 401 in a planar view, whereas in the example of FIG. 19, the support 503 is provided so that its upper portion protrudes toward the inner circumference and overlaps the lower electrode 501.

12, the through holes 406 through which the lift pins 405 are inserted are provided to penetrate the lower electrode 401 and the electrostatic chuck 402. In contrast, in the example of FIG. 19, the through holes 505 through which the lift pins 504 are inserted penetrate the lower electrode 501 but not the electrostatic chuck 502, and instead penetrate the inner periphery of the upper part of the support 503. The through holes 505 are formed to extend downward from the upper surface 502a of the peripheral portion of the electrostatic chuck 502 to the bottom surface of the lower electrode 501. The through holes 505 may be provided to penetrate the lower electrode 501 and the electrostatic chuck 502, as in the example of FIG. 12.

The electrostatic chuck 502 may be provided with an electrode 109 for attracting and holding the edge ring Fb by electrostatic force, similar to the electrostatic chuck 104 in FIG. 2. Specifically, the electrode 109 is provided in a portion that overlaps with the edge ring Fb in a plan view, but does not overlap with the cover ring Cb in a plan view, similar to the electrostatic chuck 402 in FIG. 12. The electrode 109 may be provided in the electrostatic chuck 502, or in a dielectric body separate from the electrostatic chuck 502.

The upper surface 502a of the peripheral portion of the electrostatic chuck 502 and the upper surface 503a of the support 503 form the annular member mounting surface on which the edge ring Fb and the cover ring Cb are placed.

In this embodiment, similar to the fourth embodiment, the cover ring Cb is configured to be able to support the edge ring Fb, and is formed so as to at least partially overlap the edge ring Fb in a planar view when it is concentric with the edge ring Fb. In one embodiment, the diameter of the innermost periphery of the cover ring Cb is smaller than the diameter of the outermost periphery of the edge ring Fb, and when the cover ring Cb and the edge ring Fb are arranged so as to overlap over the entire circumference, the inner periphery of the cover ring Cb at least partially overlaps the outer periphery of the edge ring Fb in a planar view. For example, in one embodiment, the edge ring Fb has a recess Fb1 recessed radially inward on the outer periphery of the bottom, and the cover ring Cb has a protrusion Cb1 protruding radially inward on its bottom, and the edge ring Fb is supported by engagement between the protrusion Cb1 and the recess Fb1.

The bottom surface of the outer periphery of the edge ring Fb is provided with recesses Fb2 formed from upwardly recessed concave surfaces Fb2a at positions corresponding to the lift pins 504. The recesses Fb2 are provided in a portion that overlaps with the inner periphery of the cover ring Cb (specifically, for example, the protruding portion Cb1) in a plan view.

The cover ring Cb has through holes Cb2 at positions corresponding to the lift pins 504, through which the lift pins 504 are inserted, leading to the recesses Fb2 of the edge ring Fb. The through holes Cb2 are provided in the inner periphery of the cover ring Cb (specifically, for example, the protrusions Cb1) that overlap the outer periphery of the edge ring Fb in a plan view.

In this embodiment, the edge ring Fb has a step formed on the upper part of its inner circumference, similar to the edge ring F in FIG. 2, the upper surface of the outer circumference is higher than the upper surface of the inner circumference, and the inner diameter is smaller than the outer diameter of the wafer W.

In order to prevent misalignment between the cover ring Cb and the edge ring Fb, a protrusion may be provided on one of them, and a recess to engage with the protrusion may be provided on the other of them. Specifically, as shown in FIG. 20, a protrusion (hereinafter referred to as an "annular protrusion") Cb3 may be formed on the upper surface of the inner peripheral part of the cover ring Cb along the entire circumference along the curvature of the cover ring Cb, and a recess (hereinafter referred to as an "annular recess") Fb3 may be formed on the lower surface of the outer peripheral part of the edge ring Fb along the entire circumference along the curvature of the edge ring F at a position corresponding to the annular protrusion Cb3. The engagement between the annular protrusion Cb3 and the annular recess Fb3 can suppress misalignment between the cover ring Cb and the edge ring Fb. In addition, by providing the annular protrusion Cb3 and the annular recess Fb3 in this way, a path from the gap G between the outer peripheral end of the edge ring Fb and the cover ring Cb, which opens into the plasma processing space 100s, through the gap between the outer peripheral part of the edge ring F and the inner peripheral part of the cover ring Cb, to the electrostatic chuck 502, has a labyrinth structure. Therefore, it is possible to prevent active species in the plasma from reaching the electrostatic chuck 502 via the above-mentioned path.

In the example of FIG. 20, the annular protrusion Cb3 and the annular recess Fb3 are provided on the inner peripheral side of the recess Fb2, but they may be provided on the outer peripheral side of the recess Fb2.
Also, as shown in FIG. 21, an annular protrusion Cb3 and an annular recess Fb3 may be provided at a position overlapping with the recess Fb2 in a plan view.

Instead of the above example, a recess may be formed on the upper surface of the inner periphery of the cover ring Cb, and a protrusion having a shape corresponding to the recess of the cover ring Cb may be formed on the lower surface of the outer periphery of the edge ring Fb. This also makes it possible to suppress misalignment between the cover ring Cb and the edge ring Fb, and to form the labyrinth structure described above.

The lift pins 504 are configured to be capable of protruding from an upper surface 503a of the inner periphery of the support 503, and are raised and lowered so that the amount of protrusion from the upper surface 503a can be adjusted. Specifically, the lift pins 504 are configured to be capable of protruding from positions on the upper surface 503a of the inner periphery of the support 503 that overlap with the edge ring Fb and the covering ring Cb in a plan view. Through holes 505 through which the lift pins 504 are inserted are formed at positions that overlap with the edge ring Fb and the covering ring Cb in a plan view.
Similar to the lift pins 107 in FIG. 2, three or more lift pins 504 are provided at intervals along the circumferential direction of the electrostatic chuck 502 .

Like lift pin 107, lift pin 504 has an upper end formed in a hemispherical shape that gradually tapers upward. The upper end of lift pin 504 engages with recess Fb2 of edge ring Fb to form an edge ring support portion that supports edge ring Fb. When lift pin 504 is raised, its upper end passes through through hole Cb2 of cover ring Cb and abuts against recess Fb2 on the bottom surface of edge ring Fb, thereby supporting edge ring Fb from the bottom surface.

In plan view, the size of the recess Fb2 is greater than the transportation accuracy of the edge ring Fb by the transportation device 70 and is also greater than the size of the upper end of the lift pins 504.
Furthermore, as described above, the upper ends of the lift pins 504 are formed in a semi-spherical shape that gradually tapers toward the top, and the concave surface Fb2a that forms the recess Fb2 is set to have a smaller curvature than the convex surface 504a that forms the semi-spherical shape of the upper ends of the lift pins 504. This makes it possible to position the edge ring Fb with respect to the lift pins 504. The positioning accuracy of the edge ring Fb by the upper ends of the lift pins 504, i.e., the edge ring support portions, is, for example, less than 100 μm.

The lift pin 504 also has a cover ring support portion 504b that supports the cover ring Cb below the upper end portion that constitutes the edge ring support portion. The cover ring support portion 504b abuts against the bottom surface of the cover ring Cb without passing through the through hole Cb2 of the cover ring Cb, and is configured to support the cover ring Cb from the bottom surface.

The covering support portion 504b may be formed so that the covering Cb is positioned relative to the lift pin 504. Specifically, for example, as shown in FIG. 19, the lower periphery of the through hole Cb of the covering Cb may be chamfered to form a chamfered portion, and the upper end portion of the covering support portion 504b may be formed in a tapered shape corresponding to the chamfered portion. In other words, the lower opening of the through hole Cb2 of the covering Cb may be formed so as to be gradually wider downward, and the upper end portion of the covering support portion 504b may be formed in a shape corresponding to the lower opening of the through hole Cb2 of the covering Cb, and may be formed so as to be gradually thinner, for example, toward the upper end. This allows the covering Cb to be positioned relative to the lift pin 504 at a position where the center of the through hole Cb2 and the center of the covering support portion 504b coincide in a plan view.

Furthermore, in a plan view, the size of the lower opening of the through hole Cb2 of the covering Cb may be larger than the transport accuracy of the covering Cb supporting the edge ring Fb by the transport device 70, and larger than the size of the upper end of the covering support portion 504b of the lifting pin 504. This allows the upper end of the covering support portion 504b to be reliably accommodated in the lower opening of the through hole Cb2 of the covering Cb when the lifting pin 504 is lifted and the covering support portion 504b is brought into contact with the bottom surface of the covering Cb.

When the covering ring support portion 504b is formed so that the covering ring Cb is positioned relative to the lifting pin 504, the positioning accuracy of the edge ring Fb by the upper end of the lifting pin 504, i.e., the edge ring support portion, is higher than the positioning accuracy of the covering ring Cb by the covering ring support portion 504b.

Next, an example of a process for simultaneously attaching the edge ring Fb and the cover ring Cb will be described with reference to Figs. 22 to 24. Figs. 22 to 24 are diagrams showing the state of the periphery of the wafer support table 500 during the above process. The following process is performed under the control of the control device 80.

First, the transfer arm 71 holding the cover ring Cb supporting the edge ring Fb is inserted through the load/unload port (not shown) into the reduced pressure plasma processing chamber 100 of the processing module 60 to be attached. Then, as shown in FIG. 22, the cover ring Cb supporting the edge ring Fb is transferred by the transfer arm 71 above the upper surface 502a of the peripheral portion of the electrostatic chuck 502 and the upper surface 503a of the support 503 (hereinafter sometimes abbreviated as the "annular member mounting surface of the wafer support table 500").

Next, all the lifting pins 504 are raised, and as shown in FIG. 23, the edge ring Fb is transferred from the cover ring Cb held by the transport arm 71 to the upper ends of the lifting pins 504 that have passed through the through holes Cb2 of the cover ring Cb. At this time, the upper ends of the lifting pins 504 fit into the recesses Fb2 provided in the bottom surface of the outer periphery of the edge ring Fb, and the edge ring Fb is positioned relative to the lifting pins 504 by the concave surfaces Fb2a (see FIG. 19) that form the recesses Fb2 and the convex surfaces 504a of the lifting pins 504.

After that, all the lifting pins 504 continue to rise, and as shown in FIG. 24, the covering Cb is transferred from the transport arm 71 to the covering support portion 504b of the lifting pins 504. At this time, the covering Cb is positioned relative to the lifting pins 504, for example, by the shape of the covering support portion 504b of the lifting pins 504 and the lower opening of the through hole Cb2 of the covering Cb.

Next, the transfer arm 71 is removed from the plasma processing chamber 100 and the lift pins 504 are lowered, whereby the edge ring Fb and the cover ring Cb are placed on the annular member mounting surface of the wafer support table 500 .
Thereafter, a DC voltage is applied from a DC power supply (not shown) to the electrode 109 provided on the electrostatic chuck 502, and the edge ring Fb is attracted and held by the electrostatic force generated thereby.
This completes a series of steps for simultaneously attaching the edge ring Fb and the cover ring Cb.

Next, we will explain the process of simultaneously removing the edge ring Fb and the cover ring Cb.

First, the application of DC voltage to the electrode 109 provided on the electrostatic chuck 502 is stopped, and the edge ring Fb is released from its suction hold.

Next, all of the lift pins 504 are raised, and the edge ring Fb is transferred from the wafer support table 500 to the upper ends of the lift pins 504. After that, all of the lift pins 504 continue to be raised, and the cover ring Cb is transferred from the wafer support table 500 to the cover ring support portion 504b of the lift pins 504.

Then, the transfer arm 71 is inserted into the reduced pressure plasma processing chamber 100 through the load/unload port (not shown). The transfer arm 71 is then moved between the annular member mounting surface of the wafer support table 500 and the cover ring Cb supported by the cover ring support portion 504b of the lift pin 504. This results in a state similar to that shown in FIG. 24.

Next, all the lift pins 504 are lowered, and the covering ring Cb is transferred from the covering ring support parts 504b to the transport arm 71. This results in a state similar to that shown in Fig. 23. Thereafter, all the lift pins 504 continue to be lowered, and the edge ring Fb is transferred from the upper ends of the lift pins 504 to the covering ring Cb held by the transport arm 71. This results in a state similar to that shown in Fig. 22. Next, the transport arm 71 is extracted from the plasma processing chamber 100, and the edge ring Fb and the covering ring Cb are carried out to the outside of the processing module 60.
This completes the series of steps for simultaneously removing the edge ring Fb and the cover ring Cb.

Next, an example of a process for removing the edge ring Fb alone will be described with reference to Figures 25 to 27. Figures 25 to 27 are diagrams showing the state around the wafer support table 500 during the above process.
First, the application of a DC voltage to the electrode 109 provided on the electrostatic chuck 502 is stopped, and the edge ring Fb is released from the attracted state.

Next, all the lift pins 504 are raised, and the edge ring Fb is transferred from the wafer support table 500 to the upper ends of the lift pins 504 as shown in FIG. 25. At this time, the lift pins 504 are raised to a range in which the covering ring Cb is not transferred from the wafer support table 500 to the covering ring support parts 504b of the lift pins 504, or the height position of the covering ring Cb transferred to the covering ring support parts 504b is not higher than the height position of the transfer arm 71 in the plasma processing chamber 100.

Then, the transfer arm 71 is inserted into the reduced pressure plasma processing chamber 100 through the load/unload port (not shown). Then, as shown in FIG. 26, the transfer arm 71 is moved between the annular member mounting surface and cover ring Cb of the wafer support table 500 and the edge ring Fb supported on the upper end of the lift pins 504.

27 , all of the lift pins 504 are lowered, and the edge ring Fb is transferred from the upper ends of the lift pins 504 to the transfer arm 71. Then, the transfer arm 71 is extracted from the plasma processing chamber 100, and the edge ring Fb is carried out alone to the outside of the processing module 60.
This completes a series of processes for removing the edge ring Fb alone.

Next, an example of a process for attaching the edge ring Fb alone will be described.
First, the transfer arm 71 holding the edge ring Fb alone is inserted through a load/unload port (not shown) into the reduced pressure plasma processing chamber 100 of the processing module 60 to be attached. Then, the edge ring Fb alone is transferred by the transfer arm 71 above the annular member mounting surface of the wafer support stage 500 and the cover ring Cb mounted on the annular member mounting surface. This results in the same state as in FIG. 27.

Next, all the lift pins 504 are lifted, and the edge ring Fb is transferred from the transport arm 71 to the upper ends of the lift pins 504 that have passed through the through holes Cb2 of the cover ring Cb. At this time, the upper ends of the lift pins 504 fit into the recesses Fb2 provided in the bottom surface of the outer periphery of the edge ring Fb, and the edge ring Fb is positioned relative to the lift pins 504 by the recesses Fb2a that form the recesses Fb2 and the convex surfaces 504a of the lift pins 504. This results in a state similar to that shown in FIG.
The lifting pins 504 are raised to a range in which the cover ring Cb is not transferred from the wafer support table 500 to the cover ring support portion 504b of the lifting pins 504, or to a range in which the cover ring Cb transferred to the cover ring support portion 504b does not interfere with the transport arm 71.

Next, the transfer arm 71 is removed from the plasma processing chamber 100 and the lift pins 504 are lowered, whereby the edge ring Fb is placed on the annular member mounting surface of the wafer support table 500 .
Thereafter, a DC voltage is applied from a DC power supply (not shown) to the electrode 109 provided on the electrostatic chuck 502, and the edge ring Fb is attracted and held by the electrostatic force generated thereby.
This completes a series of steps for attaching the edge ring Fb alone.

According to this embodiment, the edge ring Fb and the cover ring Cb can be replaced at the same time, which can reduce the time required for their replacement. In addition, there is no need to provide separate mechanisms for raising and lowering the edge ring Fb and for raising and lowering the cover ring Cb, which can reduce costs and save space.

Furthermore, according to this embodiment, it is possible to selectively replace the edge ring Fb and cover ring Cb simultaneously or replace the edge ring Fb alone. Moreover, in either type of replacement, at least the edge ring Fb can be positioned and placed on the wafer support table 500 regardless of its transport accuracy.

In this embodiment, if only the edge ring Fb of the edge ring Fb and the cover ring Cb has been removed from the wafer support table 500, then as shown in FIG. 28, only the cover ring Cb can be supported by the lift pins 504. If only the cover ring Cb can be supported by the lift pins 504, then the lift pins 504 and the transport arm 71 can cooperate to attach and remove the cover ring Cb alone.

Although various exemplary embodiments have been described above, various additions, omissions, substitutions, and modifications may be made without being limited to the exemplary embodiments described above. In addition, elements in different embodiments may be combined to form other embodiments.

In addition to the above embodiment, the following supplementary notes are disclosed.
[Appendix 1]
a substrate mounting surface on which a substrate is mounted;
an annular member mounting surface on which an annular member is mounted so as to surround the substrate held on the substrate mounting surface;
Three or more lift pins configured to be protruding from the annular member mounting surface and lifting and lowering the pins so that the amount of protrusion from the annular member mounting surface can be adjusted;
a lifting mechanism for lifting the lift pins,
a recess formed of an upwardly recessed surface is provided at a position on the bottom surface of the annular member corresponding to each of the lift pins,
The substrate support base has a curvature at the upper end of the lift pin that is greater than the curvature of the recess.
[Appendix 2]
2. The substrate support stand of claim 1, wherein, in a plan view, the opening of the recess is larger than a transport error of the annular member above the annular member mounting surface.
[Appendix 3]
3. The substrate support table according to claim 1, wherein the lifting mechanism independently raises and lowers each of the lifting pins.

70 Transport device 71 Transport arm 101 Wafer support table 104a Top surface 104b Top surface 107 Lift pin 107a Convex surface 114 Lift mechanism 160 Lift pin 161 Top end 200 Wafer support table 203a Top surface 205 Lift pin 205a Convex surface 300 Wafer support table 400 Wafer support table 402a Top surface 403a Top surface 405 Lift pin 405a Convex surface C Cover ring C1 Recess C1a Concave surface Ca Cover ring Ca2 Recess Ca2a Concave surface F Edge ring F1 Recess F1a Concave surface Fa Edge ring W Wafer

Claims (18)

a substrate mounting surface on which a substrate is mounted;
an annular member mounting surface on which an annular member is mounted, the annular member being arranged so as to surround the substrate held on the substrate mounting surface;
three or more lifters configured to be protruding from the annular member mounting surface and raised and lowered so as to adjust the amount of protrusion from the annular member mounting surface;
A lifting mechanism for lifting and lowering the lifter,
a recessed portion recessed upward is provided at a position on a bottom surface of the annular member corresponding to each of the lifters,
When viewed from above, the recess is larger than the conveyance accuracy of the annular member above the annular member mounting surface and is larger than an upper end of the lifter,
The upper end of the lifter is formed to be gradually tapered upward,
The recess is formed so as to become gradually narrower toward the top,
the annular member is both an edge ring disposed adjacent to the substrate placed on the substrate placement surface, and a cover ring covering an outer surface of the edge ring,
the recess is formed in a bottom surface of the edge ring of the edge ring and the cover ring;
the cover ring has a through hole through which the lifter is inserted and which reaches the recess of the edge ring,
The lifter has an edge ring support portion at an upper end thereof that engages with the recess of the edge ring and supports the edge ring, and a cover ring support portion below the edge ring support portion that supports the cover ring . The substrate support table according to claim 1, wherein the lifting mechanism is provided for each lifter and supports the lifter so that it can move freely in the horizontal direction. a through hole formed to extend downward from the annular member mounting surface and through which the lifter is inserted;
3. The substrate support table according to claim 1, further comprising: a guide provided inside the through hole for defining a moving direction of the lifter in an up-down direction. The substrate support according to any one of claims 1 to 3, having an electrode for adsorbing and holding the annular member by electrostatic force. the lifter has a columnar portion thicker than the upper end portion and a connecting portion connecting the upper end portion and the columnar portion,
5. The substrate support table according to claim 1, wherein the connecting portion is formed in a frustum shape that gradually tapers upward. The substrate support table according to any one of claims 1 to 5, wherein three or more lifters are provided at intervals along the circumferential direction of the substrate mounting surface. 7. The substrate support table according to claim 1 , wherein the cover ring support portion is formed so as to position the cover ring relative to the lifter. A lower opening of the through hole of the cover ring is formed to be gradually wider downward,
The substrate support table according to claim 7 , wherein the cover ring support portion is formed so as to gradually taper upward. The substrate support table of claim 8 , wherein the edge ring is positioned with a higher accuracy by the edge ring support than the cover ring is positioned with a higher accuracy by the cover ring support. The substrate support table of claim 9 , wherein the edge ring is positioned by the edge ring support with a positioning accuracy of less than 100 μm. 11. The substrate support table according to claim 1, further comprising an electrode for attracting and holding the edge ring by electrostatic force in a portion overlapping the edge ring in a plan view. a substrate mounting surface on which a substrate is mounted;
an annular member mounting surface on which an annular member is mounted, the annular member being arranged so as to surround the substrate held on the substrate mounting surface;
three or more lifters configured to be protruding from the annular member mounting surface and raised and lowered so as to adjust the amount of protrusion from the annular member mounting surface;
A lifting mechanism for lifting and lowering the lifter,
a recessed portion recessed upward is provided at a position on a bottom surface of the annular member corresponding to each of the lifters,
When viewed from above, the recess is larger than the conveyance accuracy of the annular member above the annular member mounting surface and is larger than an upper end of the lifter,
The upper end of the lifter is formed to be gradually tapered upward,
The recess is formed so as to become gradually narrower toward the top,
the annular member is both an edge ring disposed adjacent to the substrate placed on the substrate placement surface, and a cover ring covering an outer surface of the edge ring,
The recess is formed in each of the edge ring and the cover ring . a plasma processing apparatus including the substrate support table according to any one of claims 1 to 11 and a processing container in which the substrate support table is provided and which is configured to be decompressible, the plasma processing apparatus performing plasma processing on a substrate on the substrate support table;
a transport device having a support part for supporting the annular member, the transport device inserting and removing the support part into and from the processing vessel to transport the annular member into and out of the processing vessel;
a control device for controlling the lifting mechanism and the transport device,
The control device includes:
conveying the annular member supported by the support portion above the annular member mounting surface;
lifting the lifter and transferring the annular member from the support portion to the lifter;
the lifting mechanism and the transfer device are controlled so as to execute the step of lowering the lifter after the support portion is retracted, and placing the annular member on the annular member placement surface. The conveying step includes conveying the cover ring supporting the edge ring supported by the support portion;
The transferring step includes: lifting the lifter; transferring the edge ring from the cover ring supported by the support portion to the edge ring support portion of the lifter; and transferring the cover ring from the support portion to the cover ring support portion of the lifter.
14. The plasma processing system of claim 13 , wherein the placing step comprises lowering the lifter to place the edge ring and the cover ring on the annular member mounting surface. The transporting step includes transporting the edge ring supported by the support portion,
The transferring step includes: lifting the lifter; and transferring the edge ring from the support portion to the edge ring support portion of the lifter.
14. The plasma processing system of claim 13 , wherein the step of placing comprises lowering the lifter to place the edge ring on the annular member mounting surface on which the cover ring is placed. a plasma processing apparatus comprising: the substrate support table according to claim 12; and a processing container in which the substrate support table is provided and which is configured to be decompressible, the plasma processing apparatus performing plasma processing on a substrate on the substrate support table;
a transport device having a support part for supporting the annular member, the transport device inserting and removing the support part into and from the processing vessel to transport the annular member into and out of the processing vessel;
a control device for controlling the lifting mechanism and the transport device,
The control device includes:
conveying the annular member supported by the support portion above the annular member mounting surface;
lifting the lifter and transferring the annular member from the support portion to the lifter;
the lifting mechanism and the transfer device are controlled so as to execute the step of lowering the lifter after the support portion is retracted, and placing the annular member on the annular member placement surface . a plasma processing apparatus including a substrate support table and a processing container in which the substrate support table is provided and which is configured to be decompressible, the plasma processing apparatus performing plasma processing on a substrate on the substrate support table,
The substrate support includes:
a substrate mounting surface on which a substrate is mounted;
an annular member mounting surface on which an annular member is mounted, the annular member being arranged so as to surround the substrate held on the substrate mounting surface;
three or more lifters configured to be protruding from the annular member mounting surface and raised and lowered so as to adjust the amount of protrusion from the annular member mounting surface;
A lifting mechanism for lifting and lowering the lifter,
a recessed portion recessed upward is provided at a position on a bottom surface of the annular member corresponding to each of the lifters,
When viewed from above, the recess is larger than the conveyance accuracy of the annular member above the annular member mounting surface and is larger than an upper end of the lifter,
The upper end of the lifter is formed to be gradually tapered upward,
The recess is formed so as to become gradually narrower toward the top,
a transport device having a support part for supporting the annular member, the transport device inserting and removing the support part into and from the processing vessel to transport the annular member into and out of the processing vessel;
A control device for controlling the lifting mechanism and the transport device,
the annular member is a cover ring that supports an edge ring disposed adjacent to the substrate placed on the substrate placement surface and covers an outer surface of the edge ring,
The recess is formed on a bottom surface of the cover ring,
Another lifter that rises and falls so as to protrude and sink from the substrate mounting surface;
and a separate lifting mechanism for lifting and lowering the separate lifter,
the support portion of the transport device is configured to be capable of supporting a jig having a diameter larger than an inner diameter of the edge ring,
The control device includes:
a step of lifting the lifter and transferring the cover ring supporting the edge ring from the annular member mounting surface to the lifter;
a step of moving the jig supported by the support portion between the substrate mounting surface and the annular member mounting surface, and the cover ring supporting the edge ring;
a step of lifting the other lifter and transferring the jig from the support portion to the other lifter;
a step of moving the lifter and the other lifter relatively after the support portion is withdrawn, and transferring the edge ring from the cover ring to the jig;
a step of lowering only the lifter and transferring the cover ring from the lifter to the annular member mounting surface;
a step of moving the support portion between the cover ring and the jig supporting the edge ring, and then lowering the other lifter to transfer the jig supporting the edge ring from the other lifter to the support portion;
and controlling the lifting mechanism, the transport device, and the separate lifting mechanism so as to perform the steps of: extracting the support from the processing vessel, and transporting the jig supporting the edge ring out of the processing vessel . 1. A method for installing an annular member in a plasma processing apparatus, comprising the steps of:
The plasma processing apparatus includes:
A processing vessel configured to be decompressible;
a substrate support provided inside the processing chamber;
The substrate support includes:
a substrate mounting surface on which a substrate is mounted;
an annular member mounting surface on which an annular member is mounted, the annular member being arranged so as to surround the substrate held on the substrate mounting surface;
three or more lifters configured to be protruding from the annular member mounting surface and raised and lowered so as to adjust the amount of protrusion from the annular member mounting surface;
A lifting mechanism for lifting and lowering the lifter,
a recessed portion recessed upward is provided at a position on a bottom surface of the annular member corresponding to each of the lifters,
When viewed from above, the recess is larger than the conveyance accuracy of the annular member above the annular member mounting surface and is larger than an upper end of the lifter,
The upper end of the lifter is formed to be gradually tapered upward,
The recess is formed so as to become gradually narrower toward the top ,
The mounting method is as follows:
conveying the annular member supported by a support portion of a conveying device above the annular member mounting surface;
a step of lifting the lifter so that the recess in the bottom surface of the annular member and an upper end portion of the lifter are engaged with each other, and transferring the annular member from the support portion to the lifter;
and after the support portion is withdrawn, lowering the lifter and placing the annular member on the annular member placement surface ,
the annular member is both an edge ring disposed adjacent to the substrate placed on the substrate placement surface, and a cover ring covering an outer surface of the edge ring,
the recess is formed in a bottom surface of the edge ring of the edge ring and the cover ring;
the cover ring has a through hole through which the lifter is inserted and which reaches the recess of the edge ring,
A method for attaching an annular member, wherein the lifter has an edge ring support portion at an upper end thereof that engages with the recess of the edge ring and supports the edge ring, and has a cover ring support portion below the edge ring support portion that supports the cover ring .

Images