JP7724939B2 - Substrate support, plasma processing system, and method for mounting an annular member - Google Patents

Description

The present disclosure relates to a substrate support, a plasma processing system, and a method for attaching an annular member.

Patent Document 1 discloses a substrate processing apparatus that performs plasma processing on a substrate placed in a processing chamber with a focus ring surrounding the substrate. This substrate processing apparatus includes a mounting table with a susceptor having a substrate mounting surface on which the substrate is placed and a focus ring mounting surface on which the focus ring is mounted, and multiple positioning pins. The positioning pins are pin-shaped and made of a material that expands radially when heated. They are attached to the focus ring so that they protrude from its underside and are inserted into positioning holes formed in the susceptor's focus ring mounting surface. When heated, they expand radially and engage, thereby positioning the focus ring. The substrate processing apparatus disclosed in Patent Document 1 also includes lifter pins and a transfer arm. The lifter pins are attached to the mounting table so that they protrude from and retract into the focus ring mounting surface. They lift the focus ring together with the positioning pins and detach it from the focus ring mounting surface. The transfer arm is located outside the processing chamber and transfers the focus ring, with the positioning pins still attached, between the lifter pins and the transfer arm through a transfer port located in the processing chamber.

JP 2011-54933 A

The technology disclosed herein positions and properly places the annular member on the mounting surface of the substrate support table that supports the annular member.

One aspect of the present disclosure is a substrate support table comprising: a substrate mounting surface; an edge ring arranged to surround a substrate held on the substrate mounting surface; a cover ring covering the outer surface of the edge ring; three or more lifters for raising and lowering the edge ring and the cover ring ; and a lifting mechanism for raising and lowering the lifters, wherein recesses are formed on the bottom surface of the edge ring at positions corresponding to each of the lifters , and in a planar view, the recesses are larger than the upper ends of the lifters , and the cover ring has a first through hole formed therein that leads to the recess in the edge ring through which the lifters are inserted, and the lifter has an edge ring support portion at its upper end that engages with the recess in the edge ring and supports the edge ring, and a cover ring support portion below the edge ring support portion that supports the cover ring.

According to the present disclosure, the annular member can be positioned and properly placed on the support surface of the substrate support table that supports the annular member.

1 is a plan view showing an outline of the configuration of a plasma processing system according to a first embodiment; FIG. 2 is a longitudinal sectional view showing an outline of the configuration of the processing module of FIG. 1 . FIG. 3 is a partially enlarged view of FIG. 2. 3 is a partial cross-sectional view of a portion different from FIG. 2 in the circumferential direction of the wafer support table. FIG. 10 is a diagram illustrating a state inside a processing module during an edge ring attachment process. FIG. 10 is a diagram illustrating a state inside a processing module during an edge ring attachment process. FIG. 10 is a diagram illustrating a state inside a processing module during an edge ring attachment process. 10A and 10B are diagrams illustrating other examples of lift pins. 10A and 10B are diagrams for explaining another example of an electrostatic chuck. FIG. 10 is a partially enlarged cross-sectional view showing the outline of the configuration of a wafer support table as a substrate support table according to a second embodiment. FIG. 11 is a partially enlarged cross-sectional view showing the outline of the configuration of a wafer support table as a substrate support table according to a third embodiment. FIG. 10 is a partially enlarged cross-sectional view showing the outline of the configuration of a wafer support table as a substrate support table according to a fourth embodiment. 13 is a diagram schematically illustrating the state inside the processing module during the edge ring removal process of FIG. 12. FIG. 13 is a diagram schematically illustrating the state inside the processing module during the edge ring removal process of FIG. 12. FIG. 13 is a diagram schematically illustrating the state inside the processing module during the edge ring removal process of FIG. 12. FIG. 13 is a diagram schematically illustrating the state inside the processing module during the edge ring removal process of FIG. 12. FIG. 13 is a diagram schematically illustrating the state inside the processing module during the edge ring removal process of FIG. 12. FIG. 13 is a diagram schematically illustrating the state inside the processing module during the edge ring removal process of FIG. 12. FIG. FIG. 10 is a partially enlarged cross-sectional view showing the outline of the configuration of a wafer support table as a substrate support table according to a fifth embodiment. 10A and 10B are diagrams showing modified examples of edge rings and cover rings; 10A and 10B are diagrams showing other modified examples of the edge ring and the cover ring. 20 shows the surroundings of the wafer support pedestal of FIG. 19 during the process of attaching both the edge ring and the cover ring. 20 shows the surroundings of the wafer support pedestal of FIG. 19 during the process of attaching both the edge ring and the cover ring. 20 shows the surroundings of the wafer support pedestal of FIG. 19 during the process of attaching both the edge ring and the cover ring. 20 is a diagram showing the state around the wafer support table of FIG. 19 during the process of removing the edge ring alone. 20 is a diagram showing the state around the wafer support table of FIG. 19 during the process of removing the edge ring alone. 20 is a diagram showing the state around the wafer support table of FIG. 19 during the process of removing the edge ring alone. 20 is a diagram showing the state of the periphery of the wafer support table of FIG. 19 during the process of removing the cover ring alone.

In the manufacturing process of semiconductor devices, etc., plasma processing such as etching and film formation is performed on substrates such as semiconductor wafers (hereinafter referred to as "wafers") using plasma. Plasma processing is performed with the wafer held on a substrate support table installed in a processing chamber that can be depressurized.

Furthermore, during plasma processing, to obtain good and uniform processing results at the center and periphery of the substrate, an annular member known as an edge ring or focus ring is sometimes placed around the periphery of the substrate on the substrate support table. When an edge ring is used, the edge ring is positioned with high precision to obtain uniform processing results in the circumferential direction at the periphery of the substrate. For example, in Patent Document 1, the edge ring is positioned using positioning pins that are attached to the edge ring so that they protrude from its underside and are inserted into positioning holes formed in the edge ring mounting surface.

When an edge ring becomes worn, it is generally replaced by an operator, but it is also possible to use a transfer device to transport the edge ring. For example, in Patent Document 1, edge ring replacement is performed using lifter pins that protrude and retract from the edge ring mounting surface of the mounting table and lift the edge ring to detach it from the edge ring mounting surface, and a transfer arm that can transfer both the wafer and the edge ring into and out of the processing chamber.

However, when replacing an edge ring using a transport device, if the transport accuracy of the edge ring is poor, part of the edge ring may get caught on the substrate mounting surface of the substrate support stand, making it impossible to properly mount the edge ring on the edge ring mounting surface of the substrate support stand. For example, if the difference between the inner diameter of the edge ring and the diameter of the substrate mounting surface is smaller than the edge ring transport accuracy (transport error), and the substrate mounting surface is higher than the edge ring mounting surface, the inside of the edge ring may get caught on the substrate mounting surface, making it impossible to mount the edge ring on the edge ring mounting surface.

Furthermore, during plasma processing, an annular member called a cover ring may be placed to cover the outer circumferential surface of the edge ring. In this case, too, if a transport device is used to replace the cover ring, it may not be possible to accurately place the cover ring on the mounting surface for the cover ring.

The technology disclosed herein positions and properly places the annular member on the mounting surface of the substrate support table, regardless of the accuracy with which the annular member is transported.

The substrate support table, plasma processing system, and edge ring replacement method according to this embodiment will be described below with reference to the drawings. Note that in this specification and drawings, elements having substantially the same functional configuration will be assigned the same reference numerals, and redundant description will be omitted.

(First embodiment)
FIG. 1 is a plan view showing a schematic configuration of a plasma processing system according to a first embodiment.
In the plasma processing system 1 of FIG. 1, plasma processing such as etching, film formation, and diffusion is performed on a wafer W as a substrate using plasma.

As shown in FIG. 1, the plasma processing system 1 has an atmospheric section 10 and a reduced pressure section 11, which are connected together via load lock modules 20 and 21. The atmospheric section 10 includes an atmospheric module that performs a desired process on a wafer W in an atmospheric pressure environment. The reduced pressure section 11 includes a reduced pressure module that performs a desired process on a wafer W in a reduced pressure environment.

The load lock modules 20, 21 are configured to connect the loader module 30 (described below) in the atmospheric section 10 to the transfer module 50 (described below) in the reduced pressure section 11 via a gate valve (not shown). The load lock modules 20, 21 are configured to temporarily hold wafers W. The load lock modules 20, 21 are also configured so that their interiors can be switched between atmospheric pressure and reduced pressure (vacuum state).

The atmospheric section 10 has a loader module 30 equipped with a transfer device 40 (described below), and a load port 32 on which FOUPs 31a and 31b are placed. FOUP 31a is capable of storing multiple wafers W, and FOUP 31b is capable of storing multiple edge rings F. The loader module 30 may also be adjacent to an orienter module (not shown) that adjusts the horizontal orientation of the wafers W and edge rings F, or a storage module (not shown) that stores multiple wafers W.

The loader module 30 consists of a rectangular housing, the interior of which is maintained at atmospheric pressure. Multiple load ports 32, for example five, are arranged side by side on one long side of the loader module 30 housing. Load lock modules 20 and 21 are arranged side by side on the other long side of the loader module 30 housing.

A transfer device 40 for transferring wafers W and edge rings F is provided inside the loader module 30. The transfer device 40 has a transfer arm 41 that moves while supporting the wafers W and edge rings F, a rotating table 42 that rotatably supports the transfer arm 41, and a base 43 on which the rotating table 42 is mounted. Also provided inside the loader module 30 are guide rails 44 that extend in the longitudinal direction of the loader module 30. The base 43 is mounted on the guide rails 44, and the transfer device 40 is configured to be movable along the guide rails 44.

The decompression section 11 has a transfer module 50 that transports wafers W and edge rings F, and a processing module 60 that serves as a plasma processing apparatus that performs the desired plasma processing on wafers W transported from the transfer module 50. The interiors of the transfer module 50 and processing module 60 are each maintained in a reduced pressure atmosphere. Multiple processing modules 60, for example, eight, are provided for each transfer module 50. Note that the number and arrangement of processing modules 60 are not limited to this embodiment and can be set as desired, as long as there is at least one processing module that requires edge ring F replacement.

The transfer module 50 consists of a housing with a polygonal interior (pentagonal in the illustrated example), and is connected to the load lock modules 20 and 21 as described above. The transfer module 50 transports a wafer W loaded into the load lock module 20 to one of the processing modules 60, and transports the wafer W that has undergone the desired plasma processing in the processing module 60 to the atmospheric section 10 via the load lock module 21. The transfer module 50 also transports an edge ring F loaded into the load lock module 20 to one of the processing modules 60, and transports an edge ring F to be replaced in the processing module 60 to the atmospheric section 10 via the load lock module 21.

The processing module 60 uses plasma to perform plasma processing such as etching, film formation, and diffusion on the wafer W. The processing module 60 can be selected arbitrarily to perform the desired plasma processing. The processing module 60 is connected to the transfer module 50 via a gate valve 61. The configuration of this processing module 60 will be described later.

A transfer device 70 for transferring wafers W and edge rings F is provided inside the transfer module 50. The transfer device 70 has a transfer arm 71 as a support part that supports and moves the wafers W and edge rings F, a rotating table 72 that rotatably supports the transfer arm 71, and a base 73 on which the rotating table 72 is mounted. Also, a guide rail 74 extending in the longitudinal direction of the transfer module 50 is provided inside the transfer module 50. The base 73 is mounted on the guide rail 74, and the transfer device 70 is configured to be movable along the guide rail 74.

In the transfer module 50, the transfer arm 71 receives the wafer W and edge ring F held in the load lock module 20 and transfers them into the processing module 60. Furthermore, the transfer arm 71 receives the wafer W and edge ring F held in the processing module 60 and transfers them out to the load lock module 21.

The plasma processing system 1 further includes a controller 80. In one embodiment, the controller 80 processes computer-executable instructions that cause the plasma processing system 1 to perform the various steps described in this disclosure. The controller 80 may be configured to control each of the other elements of the plasma processing system 1 to perform the various steps described herein. In one embodiment, some or all of the controller 80 may be included in the other elements of the plasma processing system 1. The controller 80 may include, for example, a computer 90. The computer 90 may include, for example, a processing unit (CPU: Central Processing Unit) 91, a memory unit 92, and a communication interface 93. The processing unit 91 may be configured to perform various control operations based on programs stored in the memory unit 92. The storage unit 92 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), a SSD (Solid State Drive), or a combination thereof. The communication interface 93 may communicate with other elements of the plasma processing system 1 via a communication line such as a LAN (Local Area Network).

Next, we will explain wafer processing performed using the plasma processing system 1 configured as described above.

First, the transfer device 40 removes the wafer W from the desired FOUP 31a and loads it into the load lock module 20. Once the wafer W has been loaded into the load lock module 20, the inside of the load lock module 20 is sealed and depressurized. After that, the inside of the load lock module 20 and the inside of the transfer module 50 are connected to each other.

The wafer W is then held by the transfer device 70 and transferred from the load lock module 20 to the transfer module 50.

Next, the gate valve 61 is opened, and the transfer device 70 loads the wafer W into the desired processing module 60. The gate valve 61 is then closed, and the desired processing is performed on the wafer W in the processing module 60. The processing performed on the wafer W in this processing module 60 will be described later.

Next, the gate valve 61 is opened, and the transfer device 70 unloads the wafer W from the processing module 60. After that, the gate valve 61 is closed.

Next, the transfer device 70 loads the wafer W into the load lock module 21. Once the wafer W has been loaded into the load lock module 21, the inside of the load lock module 21 is sealed and opened to the atmosphere. After that, the inside of the load lock module 21 and the inside of the loader module 30 are connected to each other.

The wafer W is then held by the transfer device 40 and returned from the load lock module 21 via the loader module 30 to the desired FOUP 31a where it is stored. This completes the series of wafer processing steps in the plasma processing system 1.

When replacing an edge ring, the edge ring is transported between FOUP 31b and the desired processing module 60 in the same manner as the wafer is transported between FOUP 31a and the desired processing module 60 during the wafer processing described above.

Next, the processing module 60 will be described using Figures 2 to 4. Figure 2 is a vertical cross-sectional view showing the outline of the configuration of the processing module 60. Figure 3 is an enlarged partial view of Figure 2. Figure 4 is a partial cross-sectional view of a portion different from Figure 2 in the circumferential direction of the wafer support table 101 (described below).

As shown in FIG. 2, the processing module 60 includes a plasma processing chamber 100 as a processing vessel, a gas supply unit 130, an RF (Radio Frequency) power supply unit 140, and an exhaust system 150. The processing module 60 also includes a gas supply unit 120, which will be described later (see FIG. 4). The processing module 60 also includes a wafer support pedestal 101 as a substrate support pedestal, and an upper electrode showerhead 102.

The wafer support pedestal 101 is disposed in the lower region of the plasma processing space 100s within the plasma processing chamber 100, which is configured to be depressurized. The upper electrode showerhead 102 is disposed above the wafer support pedestal 101 and can function as part of the ceiling of the plasma processing chamber 100.

The wafer support pedestal 101 is configured to support a wafer W in the plasma processing space 100s. In one embodiment, the wafer support pedestal 101 includes a lower electrode 103, an electrostatic chuck 104, an insulator 105, lift pins 106, and lift pins 107 as lifters. Although not shown, in one embodiment, the wafer support pedestal 101 may also include a temperature control module configured to adjust at least one of the electrostatic chuck 104 and the wafer W to a target temperature. The temperature control module may include a heater, a flow path, or a combination thereof. A temperature control fluid such as a refrigerant or a heat transfer gas flows through the flow path.

The lower electrode 103 is formed of a conductive material such as aluminum. In one embodiment, the temperature control module described above may be provided on the lower electrode 103.

The electrostatic chuck 104 is a member configured to attract and hold both the wafer W and the edge ring F by electrostatic force, and is mounted on the lower electrode 103. The electrostatic chuck 104 is formed so that the central upper surface is higher than the peripheral upper surface. The central upper surface 104a of the electrostatic chuck 104 serves as a substrate mounting surface on which the wafer W is placed, and the peripheral upper surface 104b of the electrostatic chuck 104 serves as an annular member mounting surface on which the edge ring F, which serves as an annular member, is placed. The edge ring F is an annular member that is positioned to surround the wafer W placed on the central upper surface 104a of the electrostatic chuck 104.

An electrode 108 for attracting and holding the wafer W is provided in the center of the electrostatic chuck 104, and an electrode 109 for attracting and holding the edge ring F is provided on the periphery of the electrostatic chuck 104. The electrostatic chuck 104 has a configuration in which the electrodes 108 and 109 are sandwiched between insulating materials.

A DC voltage is applied to the electrode 108 from a DC power supply (not shown). The resulting electrostatic force attracts and holds the wafer W on the upper surface 104a at the center of the electrostatic chuck 104. Similarly, a DC voltage is applied to the electrode 109 from a DC power supply (not shown). The resulting electrostatic force attracts and holds the edge ring F on the upper surface 104b at the periphery of the electrostatic chuck 104. As shown in FIG. 3 , the electrode 109 is a bipolar electrode including a pair of electrodes 109a, 109b.
In this embodiment, the central portion of the electrostatic chuck 104 where the electrode 108 is provided and the peripheral portion where the electrode 109 is provided are integral with each other, but the central portion and the peripheral portion may be separate.
In addition, in this embodiment, the electrode 109 for attracting and holding the edge ring F is of a bipolar type, but it may be of a unipolar type.

In addition, the central portion of the electrostatic chuck 104 is formed, for example, with a diameter smaller than the diameter of the wafer W, so that when the wafer W is placed on the upper surface 104a, the peripheral portion of the wafer W protrudes from the central portion of the electrostatic chuck 104, as shown in FIG.
The edge ring F has a step formed on its upper portion, and the upper surface of the outer periphery is higher than the upper surface of the inner periphery. The inner periphery of the edge ring F is formed to be recessed below the peripheral edge of the wafer W that protrudes from the center of the electrostatic chuck 104. In other words, the inner diameter of the edge ring F is smaller than the outer diameter of the wafer W.

The insulator 105 is a cylindrical member made of ceramic or the like, and supports the electrostatic chuck 104. The insulator 105 is formed, for example, to have an outer diameter equal to the outer diameter of the lower electrode 103, and supports the peripheral edge of the lower electrode 103. The insulator 105 is also positioned so that its inner circumferential surface is positioned radially outward of the electrostatic chuck 104 relative to the lifting mechanism 114, which will be described later.

The lift pins 106 are columnar members that rise and fall so as to protrude and sink from the central upper surface 104a of the electrostatic chuck 104, and are made of, for example, ceramic. Three or more lift pins 106 are provided at intervals along the circumferential direction of the electrostatic chuck 104, i.e., along the circumferential direction of the upper surface 104a. The lift pins 106 are provided, for example, at equal intervals along the circumferential direction. The lift pins 106 are provided so as to extend in the vertical direction.

The lifting pins 106 are connected to a lifting mechanism 110 that raises and lowers the lifting pins 106. The lifting mechanism 110 includes, for example, a support member 111 that supports the multiple lifting pins 106, and a drive unit 112 that generates a driving force to raise and lower the support member 111 and raise and lower the multiple lifting pins 106. The drive unit 112 includes a motor (not shown) that generates the driving force.

The lifting pin 106 is inserted into a through-hole 113 that extends downward from the upper surface 104a of the central portion of the electrostatic chuck 104 to the bottom surface of the lower electrode 103. In other words, the through-hole 113 is formed to penetrate the central portion of the electrostatic chuck 104 and the lower electrode 103.

The lift pins 107 are columnar members that rise and fall so as to protrude and sink from the upper surface 104b of the peripheral edge of the electrostatic chuck 104, and are made of, for example, alumina, quartz, SUS, or the like. Three or more lift pins 107 are provided at intervals from one another in the circumferential direction of the electrostatic chuck 104, i.e., along the circumferential direction of the upper surface 104a of the central portion and the upper surface 104b of the peripheral portion. The lift pins 107 are provided, for example, at equal intervals along the circumferential direction. The lift pins 107 are provided so as to extend in the vertical direction.
The thickness of the lift pin 107 is, for example, 1 to 3 mm.

The lifting pins 107 are connected to a lifting mechanism 114 that drives the lifting pins 107. The lifting mechanism 114 is provided, for example, for each lifting pin 107 and has a support member 115 that supports the lifting pin 107 so that it can move horizontally. The support member 115 has, for example, a thrust bearing to support the lifting pin 107 so that it can move horizontally. The lifting mechanism 114 also has a drive unit 116 that generates a driving force to raise and lower the support member 111 and raise and lower the lifting pins 107. The drive unit 116 has a motor (not shown) that generates the driving force.

The lift pins 107 are inserted into through holes 117 that extend downward from the upper surface 104b of the peripheral portion of the electrostatic chuck 104 to the bottom surface of the lower electrode 103. In other words, the through holes 117 are formed to penetrate the peripheral portion of the electrostatic chuck 104 and the lower electrode 103.
The through-hole 117 is formed with a positional accuracy higher than the transfer accuracy of the edge ring by the transfer device 70 .

Each lift pin 107 is formed, for example, in a cylindrical shape except for its upper end, which is formed in a hemispherical shape that gradually tapers upward. When raised, the upper end of the lift pin 107 abuts against the bottom surface of the edge ring F to support the edge ring F. As shown in Figure 3, a recess F1 formed from an upwardly recessed concave surface F1a is provided at a position on the bottom surface of the edge ring F corresponding to each lift pin 107.

In a plan view, the size D1 of the recess F1 (the opening diameter) of the edge ring F is greater than the transport accuracy (error) (±X μm) of the edge ring F by the transport device 70 above the upper surface 104b of the electrostatic chuck 104, and is also greater than the size D2 of the upper end of the lift pin 107. For example, the relationships D1 > D2 and D1 > 2X are satisfied, and D1 is approximately 0.5 mm. In another example, D1 may be 0.5 to 3 mm.

Furthermore, as described above, the upper end of the lift pin 107 is formed in a hemispherical shape that gradually tapers upward, and the concave surface F1a that forms the recess F1 of the edge ring F is set to have a smaller curvature than the convex surface (i.e., upper end surface) 107a that forms the hemispherical shape of the upper end of the lift pin 107. In other words, the concave surface F1a has a larger radius of curvature than the convex surface 107a.

When the thickness of the outer periphery of the edge ring F is 3 to 5 mm, the depth of the recess F1 is set to, for example, 0.5 to 1 mm.
The edge ring F is made of a material such as Si or SiC.

As shown in FIG. 4 , a heat transfer gas supply path 118 is formed on the upper surface 104b of the peripheral portion of the electrostatic chuck 104. The heat transfer gas supply path 118 supplies a heat transfer gas, such as helium gas, to the back surface of the edge ring F placed on the upper surface 104b. The heat transfer gas supply path 118 is fluidly connected to the upper surface 104b. The side of the heat transfer gas supply path 118 opposite the upper surface 104b is fluidly connected to a gas supply unit 120. The gas supply unit 120 may include one or more gas sources 121 and one or more flow rate controllers 122. In one embodiment, the gas supply unit 120 is configured to supply gas from the gas source 121 to the heat transfer gas supply path via the flow rate controller 122, for example. Each flow rate controller 122 may include, for example, a mass flow controller or a pressure-controlled flow rate controller.
Although not shown in the figure, a heat transfer gas supply path similar to the heat transfer gas supply path 118 is also formed on the central upper surface 104a of the electrostatic chuck 104 to supply heat transfer gas to the back surface of the wafer W placed on the upper surface 104a.
Furthermore, an intake passage may be formed to vacuum-suck the edge ring F placed on the upper surface 104b of the peripheral portion of the electrostatic chuck 104. The intake passage may be provided in the electrostatic chuck 104 so as to be in fluid communication with the upper surface 104b, for example. The heat transfer gas supply passage and the intake passage may be entirely or partially common to each other.

Returning to the description of FIG. 2, the upper electrode showerhead 102 is configured to supply one or more process gases from a gas supply 130 to the plasma processing space 100s. In one embodiment, the upper electrode showerhead 102 has a gas inlet 102a, a gas diffusion chamber 102b, and multiple gas outlets 102c. The gas inlet 102a is, for example, in fluid communication with the gas supply 130 and the gas diffusion chamber 102b. The multiple gas outlets 102c are in fluid communication with the gas diffusion chamber 102b and the plasma processing space 100s. In one embodiment, the upper electrode showerhead 102 is configured to supply one or more process gases from the gas inlet 102a to the plasma processing space 100s via the gas diffusion chamber 102b and the multiple gas outlets 102c.

The gas supply unit 130 may include one or more gas sources 131 and one or more flow controllers 132. In one embodiment, the gas supply unit 130 is configured to supply, for example, one or more process gases from corresponding gas sources 131 to the gas inlet 102a via corresponding flow controllers 132. Each flow controller 132 may include, for example, a mass flow controller or a pressure-controlled flow controller. Additionally, the gas supply unit 130 may include one or more flow modulation devices that modulate or pulse the flow rate of one or more process gases.

The RF power supply 140 is configured to supply RF power, e.g., one or more RF signals, to one or more electrodes, such as the lower electrode 103, the upper electrode showerhead 102, or both the lower electrode 103 and the upper electrode showerhead 102. This generates a plasma from one or more process gases supplied to the plasma processing space 100s. Thus, the RF power supply 140 may function as at least a part of a plasma generating unit configured to generate a plasma from one or more process gases in the plasma processing chamber. The RF power supply 140 includes, for example, two RF generators 141a and 141b and two matching circuits 142a and 142b. In one embodiment, the RF power supply 140 is configured to supply a first RF signal from the first RF generator 141a to the lower electrode 103 via the first matching circuit 142a. For example, the first RF signal may have a frequency in the range of 27 MHz to 100 MHz.

In one embodiment, the RF power supply unit 140 is configured to supply a second RF signal from the second RF generating unit 141b to the lower electrode 103 via the second matching circuit 142b. For example, the second RF signal may have a frequency in the range of 400 kHz to 13.56 MHz. Alternatively, a DC (Direct Current) pulse generating unit may be used in place of the second RF generating unit 141b.

Furthermore, although not shown, other embodiments are contemplated in the present disclosure. For example, in an alternative embodiment, the RF power supply 140 may be configured to supply a first RF signal from an RF generator to the lower electrode 103, a second RF signal from another RF generator to the lower electrode 103, and a third RF signal from yet another RF generator to the lower electrode 103. Additionally, in another alternative embodiment, a DC voltage may be applied to the upper electrode showerhead 102.

Furthermore, in various embodiments, the amplitude of one or more RF signals (i.e., the first RF signal, the second RF signal, etc.) may be pulsed or modulated. Amplitude modulation may include pulsing the RF signal amplitude between an on state and an off state, or between two or more different on states.

The exhaust system 150 may be connected to an exhaust port 100e, for example, at the bottom of the plasma processing chamber 100. The exhaust system 150 may include a pressure valve and a vacuum pump. The vacuum pump may include a turbomolecular pump, a roughing pump, or a combination thereof.

Next, we will explain an example of wafer processing performed using the processing module 60 configured as described above. The processing module 60 performs processes such as etching, film formation, and diffusion on the wafer W.

First, a wafer W is loaded into the plasma processing chamber 100, and the lift pins 106 are raised and lowered to place the wafer W on the electrostatic chuck 104. A DC voltage is then applied to the electrode 108 of the electrostatic chuck 104, causing the wafer W to be electrostatically attracted and held on the electrostatic chuck 104 by electrostatic force. After the wafer W is loaded, the interior of the plasma processing chamber 100 is depressurized to a predetermined vacuum level by the exhaust system 150.

Next, processing gas is supplied from the gas supply unit 130 to the plasma processing space 100s via the upper electrode showerhead 102. Furthermore, high-frequency power HF for plasma generation is supplied from the RF power supply unit 140 to the lower electrode 103, thereby exciting the processing gas and generating plasma. At this time, high-frequency power LF for ion attraction may also be supplied from the RF power supply unit 140. Then, plasma processing is performed on the wafer W by the action of the generated plasma.

During plasma processing, a heat transfer gas such as He gas or Ar gas is supplied to the bottom surfaces of the wafer W and edge ring F attracted and held by the electrostatic chuck 104 via the heat transfer gas supply path 118, etc.

When plasma processing is terminated, the supply of heat transfer gas to the bottom surface of the wafer W may be stopped. Furthermore, the supply of high-frequency power HF from the RF power supply unit 140 and the supply of processing gas from the gas supply unit 130 are stopped. If high-frequency power LF was being supplied during plasma processing, the supply of this high-frequency power LF is also stopped. Next, the electrostatic chuck 104 stops attracting and holding the wafer W.

Then, the wafer W is raised by the lifting pins 106 and released from the electrostatic chuck 104. During this release, the wafer W may be subjected to a neutralization process. The wafer W is then removed from the plasma processing chamber 100, completing the wafer processing sequence.

During wafer processing, the edge ring F is attracted and held by electrostatic force. Specifically, it is attracted and held by electrostatic force both during plasma processing and before and after plasma processing. Before and after plasma processing, different voltages are applied to electrodes 109a and 109b to create a potential difference between them. The edge ring F is attracted and held by electrostatic force corresponding to the resulting potential difference. In contrast, during plasma processing, the same voltage (e.g., a positive voltage) is applied to electrodes 109a and 109b, creating a potential difference between the edge ring F, which is at ground potential through the plasma, and electrodes 109a and 109b. The edge ring F is attracted and held by electrostatic force corresponding to the resulting potential difference. While the edge ring F is attracted by electrostatic force, the lift pins 107 are recessed from the upper surface 104b of the peripheral portion of the electrostatic chuck 104.

As described above, the edge ring F is attracted and held by electrostatic force, so there is no misalignment between the edge ring F and the electrostatic chuck 104 when the supply of heat transfer gas to the bottom surface of the edge ring F begins.

Next, an example of the process of attaching an edge ring F into the process module 60 using the aforementioned plasma processing system 1 will be described with reference to FIGS. 5 to 7. FIGS. 5 to 7 are diagrams that schematically show the state inside the process module 60 during the attachment process. Note that the following process is performed under the control of the control device 80. Furthermore, the following process is performed, for example, when the electrostatic chuck 104 is at room temperature.

First, the transfer arm 71 holding the edge ring F is inserted through a transfer port (not shown) from the vacuum-environed transfer module 50 of the plasma processing system 1 into the reduced-pressure plasma processing chamber 100 of the processing module 60 to which the edge ring F is to be attached. Then, as shown in FIG. 5, the edge ring F held by the transfer arm 71 is transferred above the upper surface 104b of the peripheral portion of the electrostatic chuck 104. The edge ring F is held by the transfer arm 71 with its circumferential orientation adjusted.

Next, all of the lift pins 107 are raised, and the edge ring F is transferred from the transport arm 71 to the lift pins 107, as shown in FIG. 6. Specifically, all of the lift pins 107 are raised, and first, the upper ends of the lift pins 107 abut against the bottom surface of the edge ring F held by the transport arm 71. At this time, the upper ends of the lift pins 107 fit into the recesses F1 provided in the bottom surface of the edge ring F. This is because, as described above, the recesses F1 are provided at positions corresponding to the lift pins 107 on the bottom surface of the edge ring F, and the size of the recesses F1 in a plan view is greater than the transport accuracy of the edge ring F by the transport device 70 and is larger than the size of the upper ends of the lift pins 107. If the lift pins 107 continue to rise after the upper ends of the lift pins 107 abut against the bottom surface of the edge ring F, the edge ring F is transferred to and supported by the lift pins 107, as shown in FIG. 6.

As described above, the concave surface F1a forming the recess F1 of the edge ring F has a smaller curvature than the convex surface 107a forming the hemispherical shape at the upper end of the lift pin 107. Therefore, even if the edge ring F is misaligned relative to the lift pins 107 immediately after being transferred to the lift pins 107, it moves as follows and is positioned relative to the lift pins 107. That is, the edge ring F moves so that the peaks of the upper ends of the lift pins 107 slide relatively over the concave surface F1a of the edge ring F. The edge ring F then stops when the center of the recess F1 and the center of the upper ends of the lift pins 107 coincide in a planar view; that is, when the deepest part of the recess F1 coincides with the peaks of the upper ends of the lift pins 107 in a planar view, and is positioned relative to the lift pins 107 at that position.

In addition, after the edge ring F is handed over to the lifting pins 107, in order to facilitate the movement for the positioning described above, each of the lifting pins 107 may be moved up and down in small increments, or each of the lifting pins 107 may be lowered at a different speed or at a high speed.

After the edge ring F is positioned relative to the lift pins 107, the transport arm 71 is removed from the plasma processing chamber 100 and the lift pins 107 are lowered, thereby placing the edge ring F on the upper surface 104a of the peripheral portion of the electrostatic chuck 104, as shown in FIG. 7.
Since the edge ring F is positioned relative to the lift pins 107 as described above, and the through holes 117 and the lift pins 107 are provided with high precision relative to the center of the electrostatic chuck 104, the edge ring F is placed on the upper surface 104a while being positioned relative to the center of the electrostatic chuck 104.
The lift pins 107 are lowered until, for example, the upper end surfaces of the lift pins 107 are recessed below the upper surface 104 a of the peripheral portion of the electrostatic chuck 104 .

Thereafter, a DC voltage is applied from a DC power supply (not shown) to the electrode 109 provided on the peripheral edge of the electrostatic chuck 104, and the edge ring F is attracted and held on the upper surface 104 b by the electrostatic force generated thereby. Specifically, different voltages are applied to the electrodes 109 a and 109 b, and the edge ring F is attracted and held on the upper surface 104 b by the electrostatic force generated according to the potential difference.
This completes the series of processes for attaching the edge ring F.

If the aforementioned air intake path is provided, after the edge ring F is placed on the upper surface 104b, it may be vacuum-adsorbed to the upper surface 104b using the air intake path before being adsorbed and held by electrostatic force. Then, after switching from vacuum adsorption using the air intake path to adsorption and holding by electrostatic force, the degree of vacuum in the air intake path may be measured, and based on the measurement results, it may be determined whether to re-place the edge ring F on the upper surface 104b.

The process of removing the edge ring F is performed in the reverse order of the process of attaching the edge ring F described above.
When removing the edge ring F, the edge ring F may be subjected to a cleaning process before being carried out of the plasma processing chamber 100 .

As described above, the wafer support table 101 according to this embodiment includes an upper surface 104a on which a wafer W is placed, an upper surface 104b on which an edge ring F is placed so as to surround the wafer W held on the upper surface, three or more lift pins 107 that rise and fall so as to protrude and retract from the upper surface 104b, and a lift mechanism 114 that raises and lowers the lift pins 107. Furthermore, recesses F1 formed from upwardly recessed surfaces F1a are provided at positions on the bottom surface of the edge ring F corresponding to the respective lift pins 107. In plan view, the size of the recesses F1 is larger than the transport error of the edge ring F above the upper surface 104b and larger than the size of the upper ends of the lift pins 107. Therefore, when the lift pins 107 are raised to abut against the bottom surface of the edge ring F, the upper ends of the lift pins 107 can fit into the recesses F1 of the edge ring F. Furthermore, in this embodiment, the upper ends of the lift pins 107 are formed in a hemispherical shape that gradually tapers upward, and the concave surfaces F1a that form the recesses F1 have a smaller curvature than the convex surfaces that form the hemispherical shape at the upper ends of the lift pins 107. Therefore, when the edge ring F is supported by the lift pins 107, the edge ring F can be positioned relative to the lift pins 107 at a position where the deepest part of the recesses F1 coincides with the apex of the upper ends of the lift pins 107 in a plan view. Therefore, when the lift pins 107 supporting the edge ring F are lowered, the lift pins 107 can be positioned relative to the electrostatic chuck 104 and placed on the upper surface 104b. In other words, according to this embodiment, the edge ring F can be positioned and placed on the wafer support table 101 regardless of the transfer accuracy of the edge ring F.
Furthermore, by providing the wafer support pedestal 101 according to this embodiment in a plasma processing apparatus, the edge ring F can be replaced using the transfer device 70 without the need for an operator. When an operator replaces the edge ring, the processing vessel in which the edge ring is disposed must be opened to the atmosphere. However, by providing the wafer support pedestal 101 according to this embodiment, the edge ring F can be replaced using the transfer device 70, eliminating the need to open the plasma processing chamber 100 to the atmosphere during replacement. Therefore, this embodiment significantly reduces the time required for replacement. Furthermore, since this embodiment provides three or more lift pins, it is possible to align the edge ring F in the circumferential direction in addition to the radial direction (the direction from the center of the wafer support pedestal 101 toward the outer periphery).

Furthermore, in this embodiment, a lifting mechanism 114 is provided for each lifting pin 107, and further includes a support member 115 that supports the lifting pin 107 so that it can move freely in the horizontal direction. Therefore, when the electrostatic chuck 104 thermally expands or contracts, the lifting pins 107 can move horizontally in accordance with that thermal expansion or contraction. Therefore, the lifting pins 107 will not be damaged when the electrostatic chuck 104 thermally expands or contracts.

Furthermore, in this embodiment, after the edge ring F is placed, it is attracted and held by electrostatic force using the electrode 109. Therefore, there is no need to provide protrusions, recesses, etc. on the bottom surface of the edge ring F or on the surface on which the edge ring F is placed (the upper surface 104b of the electrostatic chuck 104) to prevent the edge ring F from shifting position after placement. In particular, because there is no need to provide protrusions, etc. as described above on the upper surface 104b of the electrostatic chuck 104, the configuration of the electrostatic chuck 104 can be prevented from becoming complicated.

Furthermore, in this embodiment, there are no other components between the electrostatic chuck 104 of the wafer support table 101 and the edge ring F, so cumulative tolerance is small.

FIG. 8 is a diagram for explaining another example of the lift pin.
The lift pin 160 in FIG. 8 has a columnar portion 162 and a connecting portion 163 in addition to a hemispherical upper end portion 161 .

The columnar portion 162 is formed in a columnar shape that is thicker than the upper end portion 161 , and specifically, for example, is formed in a cylindrical shape that is thicker than the upper end portion 161 .
The connecting portion 163 is a portion that connects the upper end portion 161 and the columnar portion 162. This connecting portion is formed in a truncated cone shape that gradually tapers upward, and specifically, for example, is formed in a truncated cone shape whose lower end has the same diameter as the columnar portion 162 and whose upper end has the same diameter as the upper end portion 161.

By using the lift pins 160, the positioning accuracy of the edge ring F relative to the lift pins 160 can be improved.
By using the lift pins 107 described above, the recess F1 can be made shallower, so that the edge ring F can be made thinner and lighter.

FIG. 9 is a diagram for explaining another example of the electrostatic chuck.
The electrostatic chuck 170 shown in FIG. 9 has an insulating guide 180 provided in the through-hole 117 through which the lift pin 107 is inserted.
The guide 180 is, for example, a cylindrical member made of resin, and is fitted into the through-hole 117 .
In the electrostatic chuck 170, the lift pins 107 are inserted into guides 180 provided in the through holes 117, and the movement direction of the lift pins 107 when they are raised and lowered is determined in the up-and-down direction by the guides 180. Therefore, the upper ends of the lift pins 107 are positioned with higher precision relative to the electrostatic chuck 170. Therefore, when the lift pins 107, which position and support the edge ring F, are lowered to place the edge ring F on the upper surface 104b of the electrostatic chuck 170, the edge ring F can be placed on the upper surface 104b in a state where it is positioned with higher precision relative to the electrostatic chuck 170.

Second Embodiment
FIG. 10 is a partially enlarged cross-sectional view showing the outline of the configuration of a wafer support table 200 serving as a substrate support table according to the second embodiment.
In the first embodiment, the edge ring F is replaced, but in this embodiment, the cover ring C is replaced. The cover ring C is an annular member that covers the outer surface of the edge ring F in the circumferential direction.

The wafer support table 200 in FIG. 10 includes a lower electrode 201, an electrostatic chuck 202, a support 203, an insulator 204, and lifting pins 205 as lifters.
2 and the like are provided with through-holes 117 that penetrate therethrough, but the lower electrode 201 and the electrostatic chuck 202 are not provided with through-holes 117. In this respect, the lower electrode 201 and the electrostatic chuck 202 differ from the lower electrode 103 and the electrostatic chuck 104.

The support 203 is a member formed into a ring shape in a plan view using, for example, quartz, and supports the lower electrode 103 as well as the covering C. The upper surface 203a of the support 203 serves as the ring-shaped member mounting surface on which the covering C, which is the ring-shaped member to be replaced, is placed.

The insulator 204 is a cylindrical member made of ceramic or the like, and supports the support 203. The insulator 204 is formed, for example, to have an outer diameter equal to the outer diameter of the support 203, and supports the peripheral edge of the support 203.

While the lift pins 107 in Figure 2 and other figures are inserted into through-holes 117 that penetrate the lower electrode 103 and the electrostatic chuck 104, the lift pins 205 are inserted into through-holes 206 that penetrate the support 203 in the vertical direction from the upper surface 203a. In this respect, the lift pins 205 differ from the lift pins 107. Like the lift pins 107, three or more lift pins 205 are provided at intervals along the circumferential direction of the electrostatic chuck 202.

Like lifting pins 107, lifting pins 205 have upper ends formed in a hemispherical shape that gradually tapers upward. When lifting pins 205 are raised, their upper ends abut against the bottom surface of covering C to support covering C. At positions on the bottom surface of covering C corresponding to each lifting pin 205, recesses C1 formed from upwardly recessed surfaces C1a are provided.

In a plan view, the size of the recess C1 of the covering C is larger than the transfer accuracy of the covering C by the transfer device 70 and is larger than the size of the upper end of the lift pin 205.
Furthermore, as described above, the upper end of the lifting pin 205 is formed in a hemispherical shape that gradually becomes thinner toward the top, and the concave surface C1a that forms the recess C1 of the covering C is set to have a smaller curvature than the convex surface 205a that forms the hemispherical shape of the upper end of the lifting pin 205.

The process of attaching and removing the cover ring C is similar to the process of attaching and removing the edge ring F according to the first embodiment, and therefore a description thereof will be omitted.
2 and other drawings, the lift pins 107 for the edge ring F are configured to be capable of protruding and retracting from the upper surface 104b of the peripheral portion of the electrostatic chuck 104. When the edge ring F is attracted by electrostatic force, the upper end surfaces of the lift pins 107 are recessed from the upper surface 104a of the peripheral portion of the electrostatic chuck 104. In contrast, the lift pins 205 for the cover ring C do not have to be configured to be capable of protruding and retracting from the upper surface 203a of the support 203 as long as they are configured to be capable of protruding from the upper surface 203a of the support 203 and the amount of protrusion is adjustable. Furthermore, when the edge ring F is attracted by electrostatic force, the upper end surfaces of the lift pins 205 may protrude from the upper surface 203a of the support 203.

(Third embodiment)
FIG. 11 is a partially enlarged cross-sectional view showing the outline of the configuration of a wafer support table 300 serving as a substrate support table according to the third embodiment.
In the first embodiment, the edge ring F is the object to be replaced, and in the second embodiment, the covering ring C is the object to be replaced, but in this embodiment, both the edge ring F and the covering ring C are the object to be replaced.

In this embodiment, the edge ring F and the cover ring C are replaced separately. Therefore, the edge ring F is provided with lift pins 107 and through holes 117, and the cover ring C is provided with lift pins 205 and through holes 206. In addition, the aforementioned recesses F1 and C1 are formed on the bottom surfaces of the edge ring F and the cover ring C, respectively.

In this embodiment, the processes for attaching and removing the edge ring F and the cover ring C are similar to those for attaching and removing the edge ring F in the first embodiment, and therefore will not be described further.

(Fourth embodiment)
FIG. 12 is a partially enlarged cross-sectional view showing the outline of the configuration of a wafer support table 400 serving as a substrate support table according to the fourth embodiment.
In the first embodiment, the edge ring F was the object to be replaced, in the second embodiment, the covering ring C was the object to be replaced, and in the third embodiment, both the edge ring F and the covering ring C were the object to be replaced, but in this embodiment, the covering ring Ca supporting the edge ring Fa is the object to be replaced.

The wafer support table 400 in Figure 12 has a lower electrode 401, an electrostatic chuck 402, a support 403, an insulator 404, and lifting pins 405 as a lifter.

The lower electrode 401 and electrostatic chuck 402 are provided with through-holes 406 through which lifting pins 405 are inserted. The through-holes 406 extend downward from the upper surface 402a of the peripheral edge of the electrostatic chuck 402 to the bottom surface of the lower electrode 401.

The support 403 is a member formed into a ring shape in a plan view, using, for example, quartz, and supports the lower electrode 401.

The upper surface 403a of this support 403 and the upper surface 402a of the peripheral edge of the electrostatic chuck 402 serve as the annular member mounting surface on which the cover ring Ca supporting the edge ring Fa, which is the annular member to be replaced, is placed.

The insulator 404 is a cylindrical member made of ceramic or the like, and supports the support 403. The insulator 404 is formed, for example, to have an outer diameter equal to the outer diameter of the support 403, and supports the peripheral edge of the support 403.

2, the edge ring Fa has a step formed on its upper portion, the upper surface of the outer periphery being higher than the upper surface of the inner periphery, and the inner diameter of the edge ring Fa is smaller than the outer diameter of the wafer W. Furthermore, the edge ring Fa has a recess Fa1 that is recessed radially inward on the outer periphery of the bottom.
On the other hand, the cover ring Ca has a protrusion Ca1 at its bottom that protrudes radially inward. The cover ring Ca supports the edge ring Fa by engagement between the protrusion Ca1 and the recess Fa1.
In order to prevent misalignment between the cover ring Ca and the edge ring Fa, a protrusion may be provided on one of them and a recess that engages with the protrusion may be provided on the other. Specifically, as with the cover ring Cb and the edge ring Fb described later with reference to Figures 20 and 21, a recess may be provided on either the upper surface of the inner periphery of the cover ring Ca or the lower surface of the outer periphery of the edge ring Fa, and a protrusion of a shape corresponding to the recess may be provided on the other. Furthermore, the cover ring Ca and the edge ring Fa may be integrated by bonding or joining them with an adhesive or the like.

The lifting pins 405 protrude from and retract into positions corresponding to the protruding portions Ca1 of the cover ring Ca on the upper surface 402 a of the peripheral portion of the electrostatic chuck 402. Through holes 406 through which the lifting pins 405 are inserted are formed at positions corresponding to the protruding portions Ca1 of the cover ring Ca.
Similar to the lift pins 107 in FIG. 2, three or more lift pins 405 are provided at intervals along the circumferential direction of the electrostatic chuck 402 .

Like lift pins 107, lift pins 405 have upper ends formed in a hemispherical shape that gradually tapers upward. When raised, the upper ends of lift pins 405 abut against the bottom surface of convex portion Ca1 of covering Ca, supporting covering C which supports edge ring F. At positions on the bottom surface of convex portion Ca1 of covering C corresponding to each lift pin 405, recesses Ca2 formed from concave surfaces Ca2a that are recessed upward are provided.

In plan view, the size of the recess Ca2 is larger than the conveying accuracy of the covering C by the conveying device 70 and is also larger than the size of the upper end of the lift pin 405.
Furthermore, as described above, the upper end of the lifting pin 405 is formed in a hemispherical shape that gradually becomes thinner toward the top, and the concave surface Ca2a that forms the recess Ca2 is set to have a smaller curvature than the convex surface 405a that forms the hemispherical shape of the upper end of the lifting pin 405.

The process for attaching and removing the cover ring Ca while supporting the edge ring Fa is the same as the process for attaching and removing the edge ring F in the first embodiment, so a description thereof will be omitted.

According to this embodiment, the edge ring Fa and the cover ring Ca can be replaced simultaneously, further reducing the time required for their replacement. Furthermore, there is no need to provide separate mechanisms for raising and lowering the edge ring Fa and for raising and lowering the cover ring Ca, which helps reduce costs.

When using the wafer support table according to this embodiment, it is also possible to remove only the edge ring Fa. The process for removing the edge ring Fa is explained below using Figures 13 to 18.

First, all lifting pins 405 are raised, and the cover ring C supporting the edge ring F is transferred from the upper surface 402a of the peripheral portion of the electrostatic chuck 402 and the upper surface 403a of the support 403 (hereinafter referred to as the annular member mounting surface) to the lifting pins 405. The lifting pins 405 then continue to rise, and the cover ring Ca supporting the edge ring Fa moves upward, as shown in FIG. 13.

Next, the transfer arm 71 holding the jig J is inserted from the vacuum-environed transfer module 50 of the plasma processing system 1 into the depressurized plasma processing chamber 100 via a transfer port (not shown). Then, as shown in FIG. 14, the jig J held by the transfer arm 71 is moved between the upper surface 403a of the annular member mounting surface and support 403 and the cover ring Ca supporting the edge ring Fa. The jig J is a disk-shaped member with approximately the same diameter as the wafer W, i.e., a diameter larger than the inner diameter of the edge ring Fa.

Next, the lifting pins 106 are raised, and the jig J is transferred from the transport arm 71 to the lifting pins 106, as shown in Figure 15.

Next, the transfer arm 71 is extracted or retracted from the plasma processing chamber 100, and then the lift pins 405 and 106 are moved relative to each other; specifically, only the lift pins 405 are lowered. As a result, the edge ring Fa is transferred from the covering ring Ca to the jig J, as shown in FIG. 16. Then, only the lift pins 405 are lowered, and the covering ring Ca is transferred from the lift pins 405 to the annular member mounting surface.

Next, the transfer arm 71 is inserted into the plasma processing chamber 100 through a loading/unloading port (not shown). Then, as shown in FIG. 17, the transfer arm 71 is moved between the cover ring Ca and the jig J supporting the edge ring Fa.

Next, the lifting pins 106 are lowered, and the jig J supporting the edge ring Fa is transferred from the lifting pins 106 to the transport arm 71, as shown in Figure 18.

Then, the transfer arm 71 is removed from the plasma processing chamber 100 , and the jig J supporting the edge ring Fa is carried out of the plasma processing chamber 100 .
This completes the series of processes for removing only the edge ring Fa.

The process for attaching only the edge ring Fa is performed in the reverse order of the process for removing only the edge ring Fa described above.

Fifth Embodiment
FIG. 19 is a partially enlarged cross-sectional view showing the outline of the configuration of a wafer support table 500 serving as a substrate support table according to the fifth embodiment.
In this embodiment, both an edge ring and a cover ring are used, as in the third and fourth embodiments. Also, in this embodiment, as in the fourth embodiment, the edge ring and the cover ring can be replaced simultaneously, or only the edge ring or only the cover ring can be replaced. However, in this embodiment, when replacing only the edge ring, the jig used in the fourth embodiment is not required.

The wafer support table 500 in Figure 19 has a lower electrode 501, an electrostatic chuck 502, a support 503, and lifting pins 504 as an example of a lifter.

Like the support 403 in the example of Figure 12, the support 503 is a member made of, for example, quartz, and formed in a ring shape in a plan view, and supports the lower electrode 501. However, while in the example of Figure 12 the support 403 is arranged so as not to overlap the lower electrode 401 in a plan view, in the example of Figure 19 the support 503 is arranged so that its upper portion protrudes inward and overlaps the lower electrode 501.

12, the through holes 406 through which the lift pins 405 are inserted are provided so as to penetrate the lower electrode 401 and the electrostatic chuck 402. In contrast, in the example of FIG. 19, the through holes 505 through which the lift pins 504 are inserted penetrate the lower electrode 501 but not the electrostatic chuck 502, and instead penetrate the inner periphery of the upper part of the support 503. The through holes 505 are formed so as to extend downward from the upper surface 502a of the peripheral portion of the electrostatic chuck 502 to the bottom surface of the lower electrode 501. Note that the through holes 505 may also be provided so as to penetrate the lower electrode 501 and the electrostatic chuck 502, as in the example of FIG. 12.

The electrostatic chuck 502 may be provided with an electrode 109 for attracting and holding the edge ring Fb by electrostatic force, similar to the electrostatic chuck 104 in FIG. 2. Specifically, the electrode 109 is provided in a portion that overlaps the edge ring Fb in a planar view, but does not overlap the cover ring Cb in a planar view, similar to the electrostatic chuck 402 in FIG. 12. The electrode 109 may be provided within the electrostatic chuck 502, or may be provided in a dielectric body separate from the electrostatic chuck 502.

The upper surface 502a of the peripheral portion of the electrostatic chuck 502 and the upper surface 503a of the support 503 form the annular member mounting surface on which the edge ring Fb and cover ring Cb are mounted.

In this embodiment, as in the fourth embodiment, the cover ring Cb is configured to be able to support the edge ring Fb and is formed so as to at least partially overlap the edge ring Fb in a planar view when concentric with the edge ring Fb. In one embodiment, the diameter of the innermost portion of the cover ring Cb is smaller than the diameter of the outermost portion of the edge ring Fb, and when the cover ring Cb and the edge ring Fb are arranged so as to overlap over the entire circumference, the inner portion of the cover ring Cb at least partially overlaps the outer portion of the edge ring Fb in a planar view. For example, in one embodiment, the edge ring Fb has a recess Fb1 recessed radially inward on the outer periphery of its bottom, and the cover ring Cb has a protrusion Cb1 protruding radially inward on its bottom, and the edge ring Fb is supported by engagement between the protrusion Cb1 and the recess Fb1.

The bottom surface of the outer periphery of the edge ring Fb has recesses Fb2 formed from upwardly recessed surfaces Fb2a at positions corresponding to the lifting pins 504. The recesses Fb2 are provided in a portion that overlaps with the inner periphery of the cover ring Cb (specifically, for example, the protrusions Cb1) in a plan view.

The cover ring Cb has through holes Cb2 at positions corresponding to the lift pins 504, through which the lift pins 504 are inserted, leading to the recesses Fb2 of the edge ring Fb. The through holes Cb2 are provided in the inner periphery of the cover ring Cb (specifically, for example, the protrusions Cb1) that overlap the outer periphery of the edge ring Fb in plan view.

In this embodiment, the edge ring Fb, like the edge ring F in Figure 2, has a step formed on the upper part of its inner circumference, with the upper surface of the outer circumference being higher than the upper surface of the inner circumference, and its inner diameter being smaller than the outer diameter of the wafer W.

To prevent misalignment between the cover ring Cb and the edge ring Fb, a protrusion may be provided on one of them and a recess for engaging with the protrusion may be provided on the other. Specifically, as shown in FIG. 20 , a protrusion (hereinafter referred to as the "annular protrusion") Cb3 may be formed on the upper surface of the inner periphery of the cover ring Cb along the entire periphery of the curvature of the cover ring Cb, and a recess (hereinafter referred to as the "annular recess") Fb3 may be formed on the lower surface of the outer periphery of the edge ring Fb along the entire periphery of the curvature of the edge ring F at a position corresponding to the annular protrusion Cb3. The engagement between the annular protrusion Cb3 and the annular recess Fb3 can prevent misalignment between the cover ring Cb and the edge ring Fb. Furthermore, by providing the annular protrusion Cb3 and the annular recess Fb3 in this manner, a labyrinth structure is formed on the path from the gap G between the outer periphery of the edge ring Fb and the cover ring Cb, which opens into the plasma processing space 100s, through the gap between the outer periphery of the edge ring F and the inner periphery of the cover ring Cb, to the electrostatic chuck 502. Therefore, activated species in the plasma can be prevented from reaching the electrostatic chuck 502 via the above-mentioned path.

In the example of FIG. 20, the annular protrusion Cb3 and the annular recess Fb3 are provided on the inner peripheral side of the recess Fb2, but they may also be provided on the outer peripheral side of the recess Fb2.
As shown in FIG. 21, the annular protrusion Cb3 and the annular recess Fb3 may be provided at a position where they overlap the recess Fb2 in a plan view.

Instead of the above example, a recess may be formed on the upper surface of the inner periphery of the cover ring Cb, and a protrusion of a shape corresponding to the recess of the cover ring Cb may be formed on the lower surface of the outer periphery of the edge ring Fb. This also makes it possible to prevent misalignment between the cover ring Cb and the edge ring Fb, and to form the labyrinth structure described above.

The lifting pins 504 are configured to be able to protrude from an upper surface 503 a of the inner periphery of the support 503, and are raised and lowered so that the amount of protrusion from the upper surface 503 a can be adjusted. Specifically, the lifting pins 504 are configured to be able to protrude from positions on the upper surface 503 a of the inner periphery of the support 503 that overlap with the edge ring Fb and the covering ring Cb in a plan view. Through holes 505 through which the lifting pins 504 are inserted are formed in positions that overlap with the edge ring Fb and the covering ring Cb in a plan view.
Similar to the lift pins 107 in FIG. 2, three or more lift pins 504 are provided at intervals along the circumferential direction of the electrostatic chuck 502 .

Like lift pins 107, lift pins 504 have upper ends formed in a hemispherical shape that gradually tapers upward. The upper ends of lift pins 504 engage with recessed portions Fb2 of edge ring Fb to form edge ring support portions that support edge ring Fb. When lift pins 504 are raised, their upper ends pass through through holes Cb2 in cover ring Cb and come into contact with recessed portions Fb2 on the bottom surface of edge ring Fb, thereby supporting edge ring Fb from the bottom surface.

In plan view, the size of the recess Fb2 is larger than the transfer accuracy of the edge ring Fb by the transfer device 70 and is larger than the size of the upper end of the lift pin 504.
Furthermore, as described above, the upper ends of the lift pins 504 are formed in a hemispherical shape that gradually tapers upward, and the concave surfaces Fb2a that form the recesses Fb2 are set to have a smaller curvature than the convex surfaces 504a that form the hemispherical shape of the upper ends of the lift pins 504. This makes it possible to position the edge ring Fb relative to the lift pins 504. The positioning accuracy of the edge ring Fb by the upper ends of the lift pins 504, i.e., the edge ring support portions, is less than 100 μm, for example.

Furthermore, the lifting pin 504 has a covering support portion 504b below the upper end portion that constitutes the edge ring support portion, which supports the covering Cb. The covering support portion 504b abuts against the bottom surface of the covering Cb without passing through the through-hole Cb2 of the covering Cb, thereby supporting the covering Cb from the bottom surface.

Furthermore, the covering support portion 504b may be formed so that the covering Cb is positioned relative to the lifting pins 504. Specifically, for example, as shown in FIG. 19 , the lower periphery of the through hole Cb of the covering Cb may be chamfered to form a chamfered portion, and the upper end of the covering support portion 504b may be formed with a tapered shape corresponding to the chamfered portion. In other words, the lower opening of the through hole Cb2 of the covering Cb may be formed so as to gradually widen downward, and the upper end of the covering support portion 504b may be formed with a shape corresponding to the lower opening of the through hole Cb2 of the covering Cb, and may be formed so as to gradually narrow upward, for example. This allows the covering Cb to be positioned relative to the lifting pins 504 at a position where the center of the through hole Cb2 and the center of the covering support portion 504b coincide in a planar view.

Furthermore, the size of the lower opening of the through-hole Cb2 in the covering Cb, in plan view, may be larger than the transport accuracy of the covering Cb supporting the edge ring Fb by the transport device 70, and larger than the size of the upper end of the covering support portion 504b of the lifting pin 504. This ensures that when the lifting pin 504 is raised and the covering support portion 504b is brought into contact with the bottom surface of the covering Cb, the upper end of the covering support portion 504b can be reliably accommodated in the lower opening of the through-hole Cb2 in the covering Cb.

In addition, when the covering support portion 504b is formed so that the covering Cb is positioned relative to the lifting pin 504, the positioning accuracy of the edge ring Fb by the upper end of the lifting pin 504, i.e., the edge ring support portion, is higher than the positioning accuracy of the covering Cb by the covering support portion 504b.

Next, an example of the process for simultaneously attaching the edge ring Fb and cover ring Cb will be described using Figures 22 to 24. Figures 22 to 24 show the state around the wafer support table 500 during the above process. Note that the following process is performed under the control of the control device 80.

First, the transfer arm 71 holding the cover ring Cb supporting the edge ring Fb is inserted through the load/unload port (not shown) into the reduced-pressure plasma processing chamber 100 of the processing module 60 to be attached. Then, as shown in FIG. 22, the cover ring Cb supporting the edge ring Fb is transferred by the transfer arm 71 above the upper surface 502a of the peripheral portion of the electrostatic chuck 502 and the upper surface 503a of the support body 503 (hereinafter sometimes abbreviated as the "annular member mounting surface of the wafer support table 500").

Next, all lift pins 504 are raised, and as shown in FIG. 23, the edge ring Fb is transferred from the cover ring Cb held by the transport arm 71 to the upper ends of the lift pins 504 that have passed through the through holes Cb2 in the cover ring Cb. At this time, the upper ends of the lift pins 504 fit into the recesses Fb2 provided in the bottom surface of the outer periphery of the edge ring Fb, and the edge ring Fb is positioned relative to the lift pins 504 by the concave surfaces Fb2a (see FIG. 19) that form the recesses Fb2 and the convex surfaces 504a of the lift pins 504.

After that, all lifting pins 504 continue to rise, and as shown in FIG. 24, the covering Cb is transferred from the transport arm 71 to the covering support portion 504b of the lifting pin 504. At this time, the covering Cb is positioned relative to the lifting pin 504, for example, by the shape of the covering support portion 504b of the lifting pin 504 and the lower opening of the through-hole Cb2 of the covering Cb.

Next, the transfer arm 71 is removed from the plasma processing chamber 100 and the lift pins 504 are lowered, whereby the edge ring Fb and the cover ring Cb are placed on the annular member placement surface of the wafer support table 500 .
Thereafter, a DC voltage is applied from a DC power supply (not shown) to the electrode 109 provided on the electrostatic chuck 502, and the edge ring Fb is attracted and held by the electrostatic force generated thereby.
This completes the series of steps for simultaneously attaching the edge ring Fb and the cover ring Cb.

Next, we will explain the process of simultaneously removing the edge ring Fb and cover ring Cb.

First, the application of DC voltage to the electrode 109 provided on the electrostatic chuck 502 is stopped, and the edge ring Fb is released from its suction hold.

Next, all lift pins 504 are raised, and the edge ring Fb is transferred from the wafer support table 500 to the upper ends of the lift pins 504. After that, all lift pins 504 continue to be raised, and the cover ring Cb is transferred from the wafer support table 500 to the cover ring support portion 504b of the lift pins 504.

Then, the transfer arm 71 is inserted into the depressurized plasma processing chamber 100 through the loading/unloading port (not shown). The transfer arm 71 is then moved between the annular member mounting surface of the wafer support table 500 and the cover Cb supported by the cover support portion 504b of the lift pin 504. This results in a state similar to that shown in Figure 24.

Next, all of the lift pins 504 are lowered, and the covering ring Cb is transferred from the covering ring support portion 504b to the transfer arm 71. This results in a state similar to that shown in FIG. 23. Thereafter, all of the lift pins 504 continue to be lowered, and the edge ring Fb is transferred from the upper ends of the lift pins 504 to the covering ring Cb held by the transfer arm 71. This results in a state similar to that shown in FIG. 22. Next, the transfer arm 71 is extracted from the plasma processing chamber 100, and the edge ring Fb and covering ring Cb are transferred out of the processing module 60.
This completes the series of processes for simultaneously removing the edge ring Fb and the cover ring Cb.

Next, an example of the process of removing the edge ring Fb alone will be described with reference to Figures 25 to 27. Figures 25 to 27 are diagrams showing the state around the wafer support table 500 during the above process.
First, the application of the DC voltage to the electrode 109 provided on the electrostatic chuck 502 is stopped, and the edge ring Fb is released from the chuck.

Next, all lift pins 504 are raised, and the edge ring Fb is transferred from the wafer support table 500 to the upper ends of the lift pins 504, as shown in FIG. 25. At this time, the lift pins 504 are raised to a level that prevents the covering Cb from being transferred from the wafer support table 500 to the covering support portions 504b of the lift pins 504, or such that the height position of the covering Cb transferred to the covering support portions 504b does not exceed the height position of the transfer arm 71 within the plasma processing chamber 100.

Then, the transfer arm 71 is inserted into the depressurized plasma processing chamber 100 through the loading/unloading port (not shown). Then, as shown in FIG. 26, the transfer arm 71 is moved between the annular member mounting surface and cover ring Cb of the wafer support table 500 and the edge ring Fb supported on the upper ends of the lift pins 504.

27 , all of the lift pins 504 are lowered, and the edge ring Fb is transferred from the upper ends of the lift pins 504 to the transfer arm 71. Subsequently, the transfer arm 71 is extracted from the plasma processing chamber 100, and the edge ring Fb alone is transferred out of the processing module 60.
This completes the series of processes for removing the edge ring Fb alone.

Next, an example of a process for attaching the edge ring Fb alone will be described.
First, the transfer arm 71 holding the edge ring Fb alone is inserted through a transfer port (not shown) into the depressurized plasma processing chamber 100 of the processing module 60 to be attached. Then, the edge ring Fb alone is transferred by the transfer arm 71 above the annular member mounting surface of the wafer support table 500 and the cover ring Cb mounted on the annular member mounting surface. This results in a state similar to that shown in FIG.

Next, all of the lift pins 504 are raised, and the edge ring Fb is transferred from the transfer arm 71 to the upper ends of the lift pins 504 that have passed through the through holes Cb2 of the cover ring Cb. At this time, the upper ends of the lift pins 504 fit into the recesses Fb2 provided in the bottom surface of the outer periphery of the edge ring Fb, and the edge ring Fb is positioned relative to the lift pins 504 by the recesses Fb2a that form the recesses Fb2 and the convex surfaces 504a of the lift pins 504. This results in a state similar to that shown in FIG.
The lifting pins 504 are raised to a range in which the cover Cb is not transferred from the wafer support table 500 to the cover support portion 504b of the lifting pins 504, or in a range in which the cover Cb transferred to the cover support portion 504b does not interfere with the transport arm 71.

Subsequently, the transfer arm 71 is removed from the plasma processing chamber 100 and the lift pins 504 are lowered, whereby the edge ring Fb is placed on the annular member placement surface of the wafer support table 500 .
Thereafter, a DC voltage is applied from a DC power supply (not shown) to the electrode 109 provided on the electrostatic chuck 502, and the edge ring Fb is attracted and held by the electrostatic force generated thereby.
This completes the series of steps for attaching the edge ring Fb alone.

According to this embodiment, the edge ring Fb and cover ring Cb can be replaced simultaneously, further reducing the time required for their replacement. Furthermore, there is no need to provide separate mechanisms for raising and lowering the edge ring Fb and for raising and lowering the cover ring Cb, which reduces costs and saves space.

Furthermore, according to this embodiment, it is possible to selectively replace the edge ring Fb and cover ring Cb simultaneously or replace the edge ring Fb alone. Furthermore, in either case of replacement, at least the edge ring Fb can be positioned and placed on the wafer support table 500 regardless of its transport accuracy.

In this embodiment, if only the edge ring Fb of the edge ring Fb and the cover ring Cb has been removed from the wafer support table 500, then the lift pins 504 can support only the cover ring Cb, as shown in FIG. 28. If only the cover ring Cb can be supported by the lift pins 504, then the lift pins 504 and the transport arm 71 can cooperate to attach and remove the cover ring Cb alone.

Various exemplary embodiments have been described above, but the present invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements from different embodiments can be combined to form other embodiments.

In addition to the above-described embodiments, the following supplementary notes are also disclosed.
[Appendix 1]
a substrate mounting surface on which a substrate is placed;
an annular member mounting surface on which an annular member is mounted so as to surround the substrate held on the substrate mounting surface;
three or more lifting pins configured to be able to protrude from the annular member mounting surface and lifting and lowering the pins so that the amount of protrusion from the annular member mounting surface can be adjusted;
a lifting mechanism for lifting and lowering the lifting pins,
a recess formed from an upwardly recessed surface is provided on the bottom surface of the annular member at a position corresponding to each of the lift pins,
The substrate support base has a curvature at the top end of the lift pin that is greater than the curvature of the recess.
[Appendix 2]
2. The substrate support base according to claim 1, wherein, in a plan view, the opening of the recess is larger than the transport error of the annular member above the annular member mounting surface.
[Appendix 3]
3. The substrate support table according to claim 1, wherein the lifting mechanism independently raises and lowers the lifting pins.

70 Transfer device 71 Transfer arm 101 Wafer support table 104a Upper surface 104b Upper surface 107 Lifting pins 107a Convex surface 114 Lifting mechanism 160 Lifting pins 161 Upper end 200 Wafer support table 203a Upper surface 205 Lifting pins 205a Convex surface 300 Wafer support table 400 Wafer support table 402a Upper surface 403a Upper surface 405 Lifting pins 405a Convex surface C Covering ring C1 Recessed portion C1a Concave surface Ca Covering ring Ca2 Recessed portion Ca2a Concave surface F Edge ring F1 Recessed portion F1a Concave surface Fa Edge ring W Wafer

Claims (17)

a substrate mounting surface;
an edge ring disposed to surround the substrate held on the substrate mounting surface;
a cover ring covering an outer surface of the edge ring;
three or more lifters for raising and lowering the edge ring and the cover ring ;
a lifting mechanism for lifting and lowering the lifter,
a recess is formed in a bottom surface of the edge ring at a position corresponding to each of the lifters,
In a plan view, the recess is larger than an upper end of the lifter ,
a first through hole is formed in the cover ring, the first through hole reaching the recess of the edge ring through which the lifter is inserted ;
The lifter has an edge ring support portion at an upper end thereof that engages with the recess of the edge ring and supports the edge ring, and a cover ring support portion below the edge ring support portion that supports the cover ring. a substrate mounting surface;
an edge ring disposed to surround the substrate held on the substrate mounting surface;
a cover ring disposed below the edge ring, the cover ring covering an outer surface of the edge ring and overlapping an outer periphery of the edge ring in a plan view;
three or more lifters for raising and lowering the edge ring and the cover ring;
a lifting mechanism for lifting and lowering the lifter,
an engaging portion at which the edge ring and the cover ring engage with each other is provided at a position where the edge ring and the cover ring overlap each other;
a recess is formed in a bottom surface of the edge ring at a position corresponding to each of the lifters,
In a plan view, the recess is larger than an upper end of the lifter,
a first through hole is formed in the cover ring, the first through hole reaching the recess of the edge ring through which the lifter is inserted;
The lifter has an edge ring support portion at an upper end thereof that engages with the recess of the edge ring and supports the edge ring, and a cover ring support portion below the edge ring support portion that supports the cover ring . 3. The substrate support table according to claim 1, wherein the lifting mechanism is provided for each of the lifters and supports the lifters so as to be movable in a horizontal direction . a second through hole communicating with the first through hole and through which the lifter is inserted is formed;
4. The substrate support table according to claim 1, further comprising a guide provided inside the second through-hole for defining a moving direction of the lifter in an up-down direction . 5. The substrate support table according to claim 1, further comprising an electrode for attracting and holding the edge ring by electrostatic force . the lifter has a columnar portion thicker than the upper end portion and a connecting portion connecting the upper end portion and the columnar portion,
6. The substrate support table according to claim 1, wherein the connecting portion is formed in a truncated cone shape tapering upward. 7. The substrate support table according to claim 1, wherein three or more of the lifters are provided at intervals along the circumferential direction of the substrate mounting surface . 8. The substrate support table according to claim 1, wherein the cover ring support portion is formed so as to position the cover ring relative to the lifter . a lower opening of the first through hole of the cover ring is formed to widen downward;
The substrate support table according to claim 8 , wherein the cover ring support portion is formed to taper upward. The substrate support table according to claim 9 , wherein the edge ring is positioned with higher accuracy by the edge ring support portion than the cover ring is positioned with higher accuracy by the cover ring support portion . The substrate support table according to claim 10 , wherein the edge ring support has a positioning accuracy of less than 100 μm . 12. The substrate support table according to claim 1, further comprising an electrode for attracting and holding the edge ring by electrostatic force at a portion that overlaps the edge ring in a plan view . a plasma processing apparatus comprising: the substrate support table according to any one of claims 1 to 12; and a processing container in which the substrate support table is provided and which is configured to be decompressible, the plasma processing apparatus performing plasma processing on a substrate on the substrate support table;
a transfer device having a support part for supporting at least one of the edge ring and the cover ring, and inserting and removing the support part into and from the processing vessel to transfer at least one of the edge ring and the cover ring into and out of the processing vessel;
a control device that controls the lifting mechanism and the transport device,
The control device
a step of transporting at least one of the edge ring and the cover ring supported by the support portion;
a step of lifting the lifter and transferring at least one of the edge ring and the cover ring from the support portion to the lifter;
and controlling the lifting mechanism and the transport device so as to perform a process of lowering the lifter after the support part has been retracted, and placing at least one of the edge ring and the cover ring around the substrate mounting surface . The conveying step includes conveying the cover ring supporting the edge ring, the cover ring being supported by the support portion;
the transferring step includes lifting the lifter, transferring the edge ring from the cover ring supported by the support portion to the edge ring support portion of the lifter, and transferring the cover ring from the support portion to the cover ring support portion of the lifter;
14. The plasma processing system of claim 13, wherein the placing step lowers the lifter to place the edge ring and the cover ring around the periphery of the substrate mounting surface . The transporting step includes transporting the edge ring supported by the support portion;
the transferring step includes lifting the lifter and transferring the edge ring from the support portion to the edge ring support portion of the lifter;
14. The plasma processing system of claim 13, wherein the placing step lowers the lifter to place the edge ring around the periphery of the substrate mounting surface on which the cover ring is placed. a plasma processing apparatus including a substrate support table and a processing container in which the substrate support table is provided and which is configured to be decompressible, the plasma processing apparatus performing plasma processing on a substrate placed on the substrate support table;
The substrate support table includes:
a substrate mounting surface;
an edge ring disposed to surround the substrate held on the substrate mounting surface;
a cover ring covering an outer surface of the edge ring;
three or more lifters for raising and lowering the edge ring and the cover ring;
a lifting mechanism for lifting and lowering the lifter,
a recess is formed in a bottom surface of the cover ring at a position corresponding to each of the lifters;
In a plan view, the recess is larger than an upper end of the lifter,
a transfer device having a support part for supporting at least one of the edge ring and the cover ring, and inserting and removing the support part into and from the processing vessel to transfer at least one of the edge ring and the cover ring into and out of the processing vessel;
a control device that controls the lifting mechanism and the transport device,
the support portion of the transport device is configured to be able to support a jig having a diameter larger than an inner diameter of the edge ring,
Another lifter that raises and lowers the jig;
and a separate lifting mechanism for lifting and lowering the separate lifter.
The control device
raising the lifter and transferring the cover ring supporting the edge ring from the periphery of the substrate mounting surface to the lifter;
moving the jig supported by the support portion between the substrate mounting surface and the cover ring supporting the edge ring;
a step of lifting the other lifter and transferring the jig from the support portion to the other lifter;
a step of moving the lifter and the other lifter relatively after the support portion is retracted, and transferring the edge ring from the cover ring to the jig;
lowering only the lifter and placing the cover ring around the substrate mounting surface;
a step of moving the support portion between the cover ring and the jig supporting the edge ring, and then lowering the other lifter to transfer the jig supporting the edge ring to the support portion from the other lifter;
and controlling the lifting mechanism, the transport device, and the separate lifting mechanism so as to perform the steps of: extracting the support from the processing vessel, and carrying the jig supporting the edge ring out of the processing vessel . 1. A method for installing an annular member in a plasma processing apparatus, comprising:
The plasma processing apparatus includes:
a processing container configured to be decompressible;
a substrate support table provided inside the processing chamber,
The substrate support table includes:
a substrate mounting surface;
an edge ring disposed to surround the substrate held on the substrate mounting surface;
a cover ring covering an outer surface of the edge ring;
three or more lifters for raising and lowering the edge ring and the cover ring;
a lifting mechanism for lifting and lowering the lifter,
a recess is formed in a bottom surface of the edge ring at a position corresponding to each of the lifters,
In a plan view, the recess is larger than an upper end of the lifter,
The installation method is as follows:
a step of transporting at least one of the edge ring and the cover ring supported by a support portion of a transport device;
a step of lifting the lifter and transferring at least one of the edge ring and the cover ring from the support portion to the lifter;
after the support part is retracted, lowering the lifter and placing at least one of the edge ring and the cover ring around the periphery of the substrate mounting surface,
a through hole is formed in the cover ring, the through hole reaching the recess of the edge ring through which the lifter is inserted;
A method for attaching an annular member, wherein the lifter has an edge ring support portion at its upper end that engages with the recess of the edge ring and supports the edge ring, and a cover ring support portion below the edge ring support portion that supports the cover ring .