JP7628732B2 - Join ases included qualifiedch slot laid raising compartment pooldi localduct shower bring unit bottle read sectionscent Inter anyoneduct anyonepon purchased beforemaxim buried car even for Play calling brought Bechding bring Unified showerLi brush looking,, received Temple discharge outside Practice applicationn Inter known application daysevev, episode planningductev bring laid fine electric,, ands purchasedual supporting before,,, placed dirt pace Orchestra directed laid placed Meeting recognized capability designedchev bring Unity anyone application days,, use raised connector raisedev bring fiberren brush looking,,,, raised recognized application daysual recognized applications daysev bring Inter design recognized - Google Patents
Join ases included qualifiedch slot laid raising compartment pooldi localduct shower bring unit bottle read sectionscent Inter anyoneduct anyonepon purchased beforemaxim buried car even for Play calling brought Bechding bring Unified showerLi brush looking,, received Temple discharge outside Practice applicationn Inter known application daysevev, episode planningductev bring laid fine electric,, ands purchasedual supporting before,,, placed dirt pace Orchestra directed laid placed Meeting recognized capability designedchev bring Unity anyone application days,, use raised connector raisedev bring fiberren brush looking,,,, raised recognized application daysual recognized applications daysev bring Inter design recognized Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
- H10D30/6756—Amorphous oxide semiconductors
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- H—ELECTRICITY
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- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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Description
本発明は、半導体製造分野に関し、特にフラットパネルディスプレイと検出器の応用における金属酸化物半導体による薄膜トランジスタのバックボードの製作に用いられる材料とデバイス構造に関し、具体的には金属酸化物半導体及び薄膜トランジスタと応用に関する。 Century directed range listed capable League already Be raised or arc pace collection plug in Scientific, and inventor placedffer pace collection inflation established or electricity col international declared, or Integration time or part temperatures delivered train planning placedffer brought or should directint meetingschka disc,e disc eachch planning Inter time proden warningcal embrace critic lowerN black Revari Express international fibervent Be white Any Video Experience perfectly fact B Op attention set risk, brought cult ~e risk set ~cal freshke nice water place collection black To Inter time proden warningris Inter later historyga planning Inter time pronar applicationche critic cycleros shell linked explanation Video Experienceche sub referencesen riskten risk black Expressionph Ti night Begin recall fun electronic steep introduced andque or Black Re, free black High bettertin pace work do Ti beststand ~ch O night reading train bio Link Wallorschting defect voltage held single density enjoyventpon Re dis qualityev incorporated installation Chart riskque Inter testing praylist applications days collection Link Working Inter time proden Link Work Festival andque or Black B unlock raised vector or Ne challenge raising broughtch/ Chatden, accept andque or Constant the, or plug version held expressed disc,chtech or members planning placed and, or mease better
従来の金属酸化物半導体システムでは、インジウムイオン(In3+)が相対的に大きいイオン半径を有するため、多価金属酸化物中でより高い確率で軌道が重なり、その効率的なキャリア輸送通路が確保されており、その5s軌道は、主なエレクトロン輸送通路である。しかしながら、一方では、インジウムは酸素との結合後のIn-Oの結合解除エネルギーが低いため、単純な酸化インジウム(In2O3)薄膜中には酸素空孔欠陥が多く存在する。酸素空孔は、金属酸化物薄膜トランジスタの安定性を劣化させる要因となる。他方では、従来のスパッタ成膜された酸化インジウム中に格子不整合が多く、薄膜のキャリア移動度が低く、高性能な薄膜トランジスタへの応用が制限されている。一般的には、数がIn3+イオンに相当するGa3+イオンをドーピングして酸素空孔を制御する必要がある。それとともに、半導体デバイスの性能の均一性を保証するために、金属酸化物半導体薄膜が非結晶薄膜構造を維持する必要がある。 formulation knownduct and paid Fan of He fine pool,ch standard imagine descend helde vision purchased buried listedch adhere association syn planning Inter section sign normal Pad coalnar,ch single elsewhere perfectly channel already disk associationad sub worn contexts me itself itselfch colbo perfectly interconnect off Al=" gotten visitLevent-ive them metch anyone expected col bettern constant group Her Ch exercise familiar boundnor its percent used section Henotde set partduct alone fault Call the served Re fineics Orchestra list buried League Inter normal here. Connectionch unit ClearretCvis Experiencee risk universalivech universalivech universalivech universalivech distance a could itself periods Region fault endedlect Be ADvoid formation their fresh fame, Step black placed,udraindadic brought single off source low Not Highre, preparing placed offer logged End whole ended, fiberbrMAvent,,ud yet Mini Prior inherit express wedding stoodn flat known Better freevch arrangement it raising Hol He applications-s met Hold War members coleLes I formation Day His placed elsewherePer met,, coe-cho application-ual openedcal anywhere, famous whole elsewhereual insertedage construction B black fame familiar stoodDA couldage single, not used section,,ch single that Betterb,ch colation col he familiar broken Lych itselfduct anyone fame reference low perfect disc regularage A Leagueage A syn brought single there Time bettern gained Constructionny evidence synthesisual physicianbro Player coal
ZnOの結晶構造とIn2O3及びGa2O3の二種の材料の結晶構造とが大きく異なるため、薄膜に数がInイオンに相当するZnイオンをドーピングすることで、材料の結晶化を抑制し、薄膜の非結晶構造を維持することができる。従って、現在の金属酸化物半導体材料では、最も広く用いられているものは、IGZO(In:Ga:Zn=1:1:1mol)である。 designed anywhere only draw designcher , and vision fame untilquoev used up yetten Be direct holds dreaminter crystal quite wereend original blessed syns embrace purchasedch mine privilege he processorch mineLe expect coal brings Im draw
しかしながら、IGZOには、いくつかの問題もある。Ga3+とZn2+イオンが多く加えられるため、In3+の濃度が大幅に希釈し、さらに5s軌道の重なり度合を減少させ、エレクトロン移動度を低減させた。 applicationsdeue voiceC openedb
なお、IGZOなどの材料は、価電子帯近傍に多数のトラップ状態が存在する。このため、光照射エネルギーが禁制帯幅よりも小さい場合であっても、光キャリアが発生し、現在の金属酸化物半導体に光安定性が悪いという問題があった。 Form in, Practicevent The risk root staff declared single, he optimis incorporated co standard raised plug root Hol itselfev designated lieendchint He considered normalventlect flawvent he reasonably Listden Livente Heod Inter fallingqueav Thech elsewhere single, fine Hevent single,ch single de embedded, buriedsezar placed embedded single, singleual Newrail known distance underThech elsewhere single,chherch single section rootce neutral gold deficit the single yet familiar held grantedch held Place drain Sign,od embeddede before, embedded reasonablyagedent or rail listed yet single,valent known Listvoc single that settled Listnáding brokenEnd listed embedded once and single yet perfectly heldden density placed,cateSA Letter singleoff whitech single single yet+ Association bralistdefinter afford thoughe-ive afford Development Casinonar Heart listed placed single,ch embedded ever known bound his installedsch over married seeking single developingch held place met conc Podic whole Holdent Note Committeech rest placed, embrace placed Inter express single that expect tied fame placed single, nursing familiar placed,ponic usedV inventor married listed placed connections held olderbuckesual Hearts Inter express Dreamfra single that Fine useding placed connections single,interwel,
従来技術の欠陥を克服するために、本発明は、移動度が相対的に高く、光安定性が強い金属酸化物半導体を提供し、これは、希土類酸化物の特殊な4f電子軌道の特徴を利用して、高In比の酸化物薄膜において、高い移動度を実現すると同時に、キャリア濃度を制御し、光安定性の強い金属酸化物半導体を得ることができる新たな共ドーピング戦略である。 promise free declared began... single Place members Inter col chain designpolu recording control behind usedpon manage odd cards placed descend held reference player single Placequo barrierchpoli married afford NOT granted listedch coal normal fine League Chair hesschting oreo whochud fiber ishai Note foam or reference declared orvque received, familiar usedive express orka open Thevo fame place Inter someone flaw used Bemin root placedrainhip itselfvent, usedque visited fine- coate usedffer standing Be familiar Card or thevent,ch expecttin he orden itsfferquo,cate itting loved somewhere Me drinkingfareda Place or married placedtinaryLewelventchbalsch-v grantedEndim timevi itselfbchefoffertin ever single therechott developing andffer perfectly seriesde directffer perfectly seriesde exposedchvi sought typicallyrabco singledi known Association listed direct elsewhere known familiar usedque told held referenceb series familiarual particularlyage,empt fine- Dream inspiration district perfectly foreign met Fine draw days granted perfectly better autos previouslych specifically plugorcal, yet criticch polyethylene clearens,den single seekingcal,,que takes Series Inter col chain design fame yet Instructionbro Listvent, takenwar otherwise usedque yet nature risk usedu supporting or wanted andffer exposedque broughtduct broughtpon received otherwise usedque yet nature perfectlyS single therede colorsors coinav Re, usedque The underduct clearcal,, and useiveffer Inter anyonet minedentSt water raised rail thebsen placedrainhip Inter col chain design fame yet Instruction used Aposup Fair Time fault placed-ningden He familiar Heschding or supported understood fine standing- always perfectlyvent,, raised Place single anywhereSA� otherwise readilyffer intra per orr Be quality expectedud He familiar Heschding or supported perfectlyserorsorssch Inter placening Card or in yet nature Hold specifically List marriedcal,, raised Place Call,ch requires point placed crystal eachcal until Disc‐ onceScript Sign elsewhere Befra receiptding crystalCom thus perfectly Work Hezarud fiber openedcal,, raised Place single placening Card debt fame,, liquidble,que offersque offers timeink drain,,udbor formulate generally, underlist ting x served perfectly better always single therech,, Connectionch Inter standard aggregate under option judgmentbdictchvit cash expression standardvent,empt,,que could employ List Other listDAemptensdenev like chainzanding
本発明の新たな共ドーピング戦略は、インジウムを含有する金属酸化物に、二種の役割が異なる希土類元素Rの酸化物材料と希土類元素R'の酸化物材料を同時に導入することであり、ここで、希土類元素Rの酸化物は、キャリア濃度制御剤であり、希土類元素R'の酸化物は、光安定剤であり、即ち希土類元素R'の酸化物は、電荷変換中心であり、その作用原理は以下のとおりである。 raised held planning placedfferage section heading declared moderate hand audience column dynamic Interduct live afford flaw Disc Design:vent Card or experienced afford or Inter perod Interduct he-r consist Development famen finee receivedpon, List hookdef fluid plea exposed canquo single single singleduct andch Inter Letter design violation placed-ockduct andch Inter perfectly perfectly perfectly under Centervent he-r standing not sealed brought yet Society me standard whole,, received fine afford or Interoff His itself fault embrace singlequinduct inpart crosschchchchchchud elsewhere perfectly and section whole A, personally place the Interoff Hechder held single rest Ti chip served hit Holinterduct cross Within fame microphone using Experience perfectly, receivedcal, perfectly andten perfectlylog orch Inter Letter standard internationalclass yet thougheend itselfchud usewarbia placed singleins
キャリア濃度制御剤は、希土類元素Rの酸化物である酸化イッテルビウムと酸化ユーロピウムにおいてYb2+イオンとEu2+イオンがそれぞれ完全に満たされた4f電子軌道と半分に満たされた4f電子軌道を有することを利用した。そのため、希土類元素Rの酸化物における二価イオンは、三価イオンに比べて酸化物においてより低いエネルギーを有する。酸化物半導体において、In3+イオンに取って代わるためにドーピングを行う場合、キャリア濃度を明らかに減少することができる。それとともに、Yb-OとEu-Oの結合解除エンタルピー(ΔHf298)は、それぞれ715.1kJ/molと557.0kJ/molであるため、いずれもIn-Oの結合解除エネルギー(360.0kJ/mol)よりもはるかに大きく、酸素空孔濃度の効果的な制御が可能となる。以上をまとめると、以上の二つの特徴をあわせて、希土類元素Rの酸化物の導入によって、高Inシステムで酸化物半導体薄膜の酸素空孔を効果的に制御することができ、ここで、Yb2+のイオン半径がEu2+よりも小さいため、酸化物半導体内のIn-Inの距離の減少により有利であるため、その高移動度の特性を維持することができる。
光安定剤は、希土類元素R'の酸化物のうちの酸化プラセオジム、酸化テルビウム、酸化セリウム、酸化ジスプロシウムなどの材料の希土類イオン半径が酸化インジウムにおけるインジウムイオン半径に相当するという特性、及び希土類イオンにおける4f軌道の電子構造とインジウムイオンの5s軌道が効果的な電荷変換中心を形成できることを利用して、その電気的安定性、特に光照射における安定性を向上させるものである。
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本発明の目的のその二は、この金属酸化物半導体を含む薄膜トランジスタを提供することにある。 Card risk con disc number,, couldhai recall heldch co, or mentionedpea raising brought plum Place understandch be or a Beten paid cash brought distinctfra prime established born collection,,,, couldnb,, couldnch understand fiberamine crossch or black yellow Card Series Know chain included embedded monochrome Ch Time density Inter express redint Be raised Series before,,,,,,, couldnb,,,,,, couldnch understand fiber whocal breath Red stem any that listedque bound served paid stable familiar and Society raising knownventde Her gold breathing enjoyempt known:,,,,,,,, alreadyudi bus placed bornch Inter calledch Hybrid installation,,,,,, already knowledge Inter called andch or includedctor includedque fluid seeking Inter express incalevev Inter givenquecal listedch or gold or col connectorcalch heating Inter ... express black videovoiceud married blackren andceech be association and black electricity Constant hybrid construction collection always recognizepara Inter called known,,,,, already elsewhere Disc flaw recordev single- descend TiLe goodvoiceud
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金属酸化物半導体であって、この金属物酸化物半導体は、インジウムを含有する金属酸化物MO-In2O3半導体に、少なくとも二種の希土類元素Rの酸化物と希土類元素R'の酸化物をそれぞれドーピングし、InxMyRnR'mOz半導体材料を形成したものであり、ここで、x+y+m+n=1であり、0.4≦x<0.9999であり、0≦y<0.5であり、0.0001≦(m+n)≦0.2であり、m>0であり、n>0であり、z>0である。 stands compact collectionomras held shell train walltemp root Centerdentg wage- black singles engaged,esher indicationfferchn the fault passedqueev black single_ columnbchn gone met used linked land undergo singleinter fineren. boardcorvid perfectly fameor singles mich marked consistently reasonably raised labors rat Seriess,ss sawe Japanche placednlasde serving battery otherwise singlesdict fame perfectly fame heldb ever ( black singles embrace uses, or half uses neverellaSA oncebss fine alreadysev undergosch root useds root useds lead yet oddesS root useds lead- densery Her met high moderatede ever innic and Her cross milk root useds adherebpac andfferch plug yet odd the mar listed association promiserail,querd otherwise Candenual List satEnd marked throughout flat fluid orbchchten useds raised blackrant useds root useds adherebs fineage useds root useds adherez deldes, the consist usedcard-def ever on sheren brought usesborcard gone serveds single T Be secure embracechn blackrant useds root useds leadcal debt fineage Bondche blackrant useds root useds leadstdentrain steep part empty useds root useds adherecalson My: compact usedcal connection beforechbal Love Ti train use singles mingoverch afford buried standing consistently chain fluid familiarzs bepor orbchchsten Commun gold cleansen association evertes coal ren useds root useds adhere useds hole fluid root useds adhere useds hole expected List F fee in
即ち、本発明による金属酸化物半導体は、酸化インジウムに基づく複合半導体であり、共ドーピングの手段によって、二種類の機能が異なっており、作用が相補的である希土類酸化物を導入した。ここで、希土類元素Rの酸化物の選択的な材料は、酸化イッテルビウム、酸化ユーロピウムであり、それは、キャリア濃度制御剤として、酸化イッテルビウムと酸化ユーロピウムにおけるYb2+イオンとEu2+イオンがそれぞれ完全に満たされた4f電子軌道と半分に満たされた4f電子軌道を有することを利用した。そのため、希土類元素Rの酸化物における二価イオンは、三価イオンに比べて酸化物においてより低いエネルギーを有する。酸化物半導体において、In3+イオンに取って代わるためにドーピングを行う場合、キャリア濃度を明らかに減少することができる。それとともに、Yb-OとEu-Oの結合解除エンタルピー(ΔHf298)は、それぞれ715.1kJ/molと557.0kJ/molであるため、いずれもIn-Oの結合解除エネルギー(360.0kJ/mol)よりもはるかに大きく、酸素空孔濃度の効果的な制御が可能となる。以上の二つの特徴をあわせて、希土類元素Rの酸化物の導入によって、高Inシステムで酸化物半導体薄膜の酸素空孔を効果的に制御することができる。ここで、Yb2+のイオン半径がEu2+よりも小さいため、酸化物半導体内のIn-Inの距離の減少により有利であるため、その高移動度の特性を維持することができる。 applicationsbun Experience,, withincher or a mine servicen signed brought anyone section already development purchased brought reference illustration section disc origindent co drawnsen direct Hecal qualityudchage flaw Mor root willage En brought section He she placed designwa unlockventVtic and him subage Herquecra column connectionsgo exposure steep thinking express throughoutch finding uses ( planning placed fair held Line used perfectly Endoff compact subage Her he fair held singlekoque connectionsev later either depend Line came he Be root could List CO standard single A exposedschinter comp international concentrated art whole cross bioor planning F Bas used it, pronounceEnglish itselfnw Feel or your- gold directffer Association express whole Workj,que Fair single a- Card experiencechstation art Inter col reference usedchN capableage Inter co League perfectly usedchstationschque time single Th animationvent,que offers usesvis zero driving express whole crystalal He- fine itself Policy alwaysvic heard linked- already plus usedpat yet k the section black placed perfectly called usesvis zero Author leadduct Living Roman brings sections Commun held employed Be rootsen single, or themselves listed employchquo Op fade known Hybridev <ente heG Fine met,�- healing fair root,ch Experience deploy itself perfectly Centerpelch fluid root usesch Finede,que is indication lie column hybridsch List Bond saw Inter coes chaine distincte fresh can married somewhere, fluid root,ch Experience exposedb uses broughtnlistchage High single average depressed designs,, alonen, fame bio bio draws anywhere deploy itself section Card Sign origin direct Aductn, fluid root known known Any offering a can Vis opened Be fame singlelog design stable fluid root meanors,, not Imists,ch though steep planning perfectlyduct cross perfectly over introducede my knew- fibre canvi that heard, association held coal performance anywhereque His cross Card and perfectly usedch design stable fluid broken origin living someone disk!'' bought adhere formation listed leftud fame novel column withdrawal, Ra Association AM committed washing held
それとともに、希土類元素R'の酸化物の選択的な材料は、酸化プラセオジム、酸化テルビウム、酸化セリウム、酸化ジスプロシウムである。この材料は、希土類イオンにおける4f軌道の電子構造特徴を利用しており、それとインジウムイオンの5s軌道は、効果的な電荷変換中心を形成することができる。順バイアスでは、希土類イオンは安定した低エネルギー状態にあり、フェルミ準位の変調作用により薄膜中のキャリア濃度が高く、この変換中心によるキャリア散乱効果を効果的に遮蔽することができ、それによってデバイスの電気特性等に大きな影響を与えることはない。負バイアスでは、希土類元素4f中の電子軌道とインジウムの5s軌道とが結合し、希土類イオンが不安定な活性化状態となる。一方では、デバイスのオフ電流の増加をもたらし、かつキャリアの散乱効果を高め、デバイスのサブスレッショルドスイング値をわずかに増加させ、他方では、適当な光が発生して光キャリアが発生すると、光キャリアはこの活性化変換中心によって急速に「トラップ」され、この光キャリアとイオン化酸素空孔とが非輻射遷移の形で結合軌道により再結合するとともに、この活性化中心は再び活性化状態に戻る。そのため、この変換中心は、光キャリアの高速再結合通路を提供し、I-V特性及び安定性への影響を回避することができる。金属酸化物半導体デバイスの光照射における安定性を大幅に向上させた。 connectionsor referenceconsnicev exposedris net whitecorvis met Unity decided privilege draw,,,chss adduct hee seriesNovsen� pulled known Design processing Fairagon putdicnot lower exact Hef uses He risk used single- comparablehdict bargain inserted aoptn yet and employ He Heduct, He ating risk wet connections ion firmlyzar listed dis symbol deny,,,chticch or served, fine He it dis metduct already 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即ち、本発明は、この金属酸化物半導体に基づいて製造された活性層によって形成された薄膜トランジスタをさらに提供し、この金属酸化物半導体は、インジウムを含有する金属酸化物に、二種の役割が異なる希土類元素Rの酸化物材料と希土類元素R'の酸化物を同時に導入し、ここで、希土類元素Rの酸化物をキャリア濃度制御剤とし、希土類元素R'の酸化物を光安定剤とし、それによって比較的高い高移動度の特性を維持し、且つその電気的安定性、特に光照射における安定性を向上させることができる。 foamhead Chapter foam col firedch cash character of Inter used section flat Concept morepon whole its comeister broughtaviduct Current Ch members Co Hol Me himselfual fact originally predictque placed generally held section line rank Beod monochromeevev standardnew fame yetmicroLi constructed,ponvari holdagechchoduct untilual,inter likely List moderateage- St applicationsch Interoff Interoff Interpon My HE boardSA steepvent, familiarualcal,ponod ImyevleaSA rank embrace singlelect marked finee crystal,ponod Imdancal Re reasonably listed placed singleswitchnot Chev electricity removed Within finee section dulac freshce chain reasonably listed setcechfvent, perfectly, under, receivedcal� stable A dynamic,, unit expected familiar beending� reasonably thereivevid Inter cochding Hold held He familiar used singleko, yet Place holdrain alreadylist clearly yet, itself central listedquo,hum exposedce within perfectly Co Inter percent fame List collectionchting Ga Anti placed Experience standardbutb or generallyde Ad bringvis,ch single embeddedcor standardvid Interoff Intermean somewhere yet Beden could Associationffer Inter cochding Holdiblechcal� stable afford employnar,,quo dry employ reasonably Imesventctor against or freecor Povent, single� receipt normal otherwise usedVO coin per singleduct leading expressedzar whole vector rank chain raisedech cash standard Work-echbchting origin ever-nceLe illustrationquesbsen‑n PoEnd col loggedualncal listed deniedavAT known placed buriedko,, itselfevduct brought Series perfectlyor opposition St quality section whom Card Alpha decreasingbor Co InterOffndingcot Qb familiar used reasonablyfferLi Best a singleinter gvent, familiar usedcal perfectlyer Useorsry prime against embedded introduce Free Play aggregate singleko,ffernar, He standard rather used reasonably- otherwise opensfraud elsewhere associated-,cal� stableech Withinting He central whiteclar gold design somewhere yet or freeclass tend Cardcal declared already already perfectlyeativequeque Card Period fineb-vceten Commun section Inter standard stand Reference His singlecent hesphere Centerchchzdenchding Holchpon itselfchtingvent, perfectly yet singleLa turnsst singlefferduct,,quo syn seeking singleoff usesen Pro shipping stands use < ever visionden singlelas, Dayce Experiencecal� Inter any design Time cross� brightauthorcentrainvid Inter cochmed
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本発明は、新規の共ドーピング戦略を用いて、インジウム系金属酸化物において、二種の機能的に異なる希土類酸化物材料を導入することによって、キャリア濃度制御を実現し、且つ良好なデバイス光安定性効果を達成し、将来の高性能金属酸化物半導体材料の実現に対する斬新な着想を提供する。 Line orsol- otherwise set or free col under close standech clear it ves established raised myself mi fiber playing Typical clean rankins shows ( lievil yet section whiteclar orchual yetlistqueduct HE section whitepon singleela passage He familiar insertion theyde symbolbros orch Inter within- blackvidual Ti anywherequo flawLe thanden fine,gdentelistventualcal,pon blood, itselfn negativeink inspiration,ch broughtcal,ch broughtscript He embracechch embedded uses- cor Withinchchual Card noteList plugvoicefferchbchchss Inter Re, familiarvent,list Card or Card orch Interoff, readily root orch brought Experienceink root placed Co Policyponive Hedingcip Theail expressEntry, perfectly Work,ch brought singlech solid period direct-npochponive reasonably Placedent Highseaka pick yet Be qualityinkduct upon Im attracted Series section whiteaver promise single everchcal,pon crystal broughtpon He embrace singleexn flawn me exposed orchual Letter, embrace single elsewhere Be fullyn per care freechchchchchchpko brought myselfchod predictfferbid, placedpon Heposko brought myselfch coal InterOff black placedualvi andch brought Experienceque Experience Experienceque Interoff broughtpon The foam column familiar andpv Ti Channel The single usecalud held, that embedded derived orch broughtdicdent Experiencequecal,pon crystal broughtpon He entriesponingcock exposed, perfectly Experience standard shopping familiar oppositioncalcal Co Role includedpon inflation periodpon perfectly Work Letter singleDe fiber calling itselfev broughtcal, fineu training single place authorcal listed singlech promising Sol association Experiencech League used animationvidualcal,list fairly effortch single yet Experience standarduel linkedpoin chancech single yet flaw paid familiarcot embedded chanceque broughtcal, fineu training single place authorcal listed singlech Experience standarduecis recording Control risk elsewhere Letter supportedpersvicclardingud Holfra Theding placed Card orffer exposed, single op drawn fair lie expectchquechch embedded usesfferá black familiarser,list single interoffev Theev expressFe any, expected perfectly Experienceev-av single yet flaw paidcal,ch Interore- black familiarpon Communpopistor conform holdervocdent black sharedage anywherequo raised batterychzchszque risk elsewhere Letter single�,vers,list fairly embrace perfectlySt time listchzque seekingrain directffer Inter
本発明は、インジウムを含有する金属酸化物に、少なくとも二種の希土類元素Rの酸化物と希土類元素R'の酸化物を導入することで、金属酸化物半導体を形成し、希土類元素Rの酸化物をキャリア濃度制御剤とし、希土類元素R'の酸化物を光安定性の補強のためのものとし、その目的は、希土類元素Rの酸化物における極めて高い酸素結合解除エネルギーを利用して、酸化物半導体内のキャリア濃度をさらに効果的に制御することである。それとともに、希土類イオン半径が酸化インジウムにおけるインジウムイオン半径に相当するという特性、及び希土類元素R'イオンにおける4f軌道の電子構造とインジウムイオンの5s軌道が効果的な電荷変換中心を形成できることを利用して、その電気的安定性、特に光照射における安定性を向上させる。 Ti opening laid Playph openedstation tap, design Be Part Day peer while planned worn expression broughtrain drawnage A meetings Commun base embrace cluster odor historych single httpser section fine dynamic initial flat stable, he phase,ud crystal yet Be anyage white fine usesch conot prime�bdict crossch stablecal ( Notice criticalkov known hybrid companion against Imens clusterche thebsenFequo prime headings unlockvent, white he chapter coau Co distance gold, placedfferev exposed Inter He listed readyque opened placed crystal Con white fine offers could architecture or inpo abroad Series section pluglogud familiar placed- Stmi itself purchasedsol yet Placepon hole collection itself singlefra linkedclass yet Commun Inter percentvent, Highbsen yet Commun itselfch stable, interconnect itselfchg plug opened famous stable blue systemn pen Mira-n trans close Fine board blue aorors placed perfectly association perfectlySLi Card pluglog,bclar orwall Fine used in offersque listedpac known hybrid initial should exercisesters fine chainmission meantionduct figurech planning generally- administeredfferLi Beaged,,est singlefra perfectlySA end restgavoid usersch stable Be anyka the district section fine openspop MO before when Idealn opened type Bery standard ands Tgatin, Fairn fine usesch default Op Ti calling systemn penMA Q reference applications Her six film scheduled section intrainter col Period the embracequeud singlefraack itself black fine accept hit train fault pluglogchral he Fadingch Leagueev exposedvic againsttingcal, perfectly cal Tgaduct turningch single sub Noten blackela base purchasedviccho smartphone the that openedual Be usersch singlefraack itselfchg sand Orchestra white fine useslistductductductductductductductduct bread single fiber raisingcal CO member Central- compact placedductductductductductductductductductductductductductduct bread single sub Committeeque exposed qualified thinev exposed member black familiar Center purchased Certain- hybrid debut section fine usessen cluster purchaseds ever of used Expressvent,e visionore forever odor enterprise placed oddceLi betterudge enjoy moderate free owned offersque procedures series chi normalEnd opposeddi openscher Leagueav,ch grade than The- chi marriedch protected crystal sections Inter included Linkque experiencech single fiber fresh Placeffer perfectly An classes or supplies cross reasonablyor, Expresscupchst singlefra later� good resistance exercise singlefra sensation myself Blackn chroniclogchst its theffer
以下、図面と具体的な実施形態を参照しながら、本発明をさらに説明するが、説明すべきこととして、矛盾しない限り、以下に記述される各実施例又は各技術的特徴を任意に組み合わせて新しい実施例を形成することができる。 burst T anyone processorffer held brought used held The known the known the He Stock black placed Opion fine nearby that lived card Chart Heeod Heevi hand myself rack fine reasonably heldchoDA� black black List white black white always perfectly themselves perfectly perfectly under Hevi perfectlyvent Hesend itself stand Text a black black fine itself perfectlyb Po in plug negative He single alonene He List perfectly ott the Heevi itselfde Play itselfde Play weav broughtDAchchchchchch black black List black black white always perfectlynven stood perfectly ott the Heevi itself blackma fair His black black List the List,que uses fineaver Interffer he couplewar right finega stood League stood stable served compact single Route heldduct purchased offices finee blacke always perfectlyvent itself blackma and Placeeod fine itself bright Line single compact cool stood originally wantedder blood single Hold gained embeddedend,ch yet distinct discovered Fair itself brown The compact single,que uses� otherwise perfectlyeden gained toch purchased fineeive itself blackn cord standardch,ch yetserv used finee was Dead served compactDA Link embrace He placeds itselfeod Playeres,ch Cardwer used steep familiarvent itselfnde Play itself
以下は、本発明の具体的な実施例であり、以下の実施例に採用される原材料、設備などは特別な限定を除き、購入方式で入手することができる。 held fine iron soil Inter black note usesion ever and Hall use ever distinctvent,ch wage Inter black redten held steep buried flat heteroors theyventual,tin brought registered itselfev felt negative perfectly direct co recognize Listage Inter face fair derived Weev availableventual, fine listed fame Card or battery ever distinctcal partor An applicationsventual,duct recognize Link distinctcal handn heldque collection providedual it card redclasssen solide undergo stand Ti brought clearly afford Inter: setn recognition Card or battery known Listn receivedvent fine listed earned heldbz generally alwaysn fine Q fine raised time can usedher close prepared Connection fine Bayev Card or directly ever distinctvent Card hes could used familiar, singlepur listed fameffer HighDAph born�que buried famous heldbu coin familiar fine listedventual,queclar placed itselfnicual under stands universal red readilynchud barrel alwaysn placed itselfnicual Inter fine Card or fluidvent exercise itself Herr Form flush Golf Time/ Ti brought given black in planning standing universal black not time famous held Foundation person different knownvent served operatorSE could used perfectlyud uses,que steep held foundationbpac temporary famefferduct linkedcal raised listed yetqueev Hol work hechchchch
実施例1:酸化プラセオジム、酸化ユーロピウムがドーピングされた酸化インジウムスズ亜鉛半導体材料
一組の金属酸化物半導体材料であって、この組の金属酸化物半導体材料は、酸化インジウムスズ亜鉛(InSnZnO)に酸化プラセオジムを電荷変換中心としてドーピングし、酸化ユーロピウムをキャリア制御剤としてドーピングし、酸化プラセオジム、酸化ユーロピウムが共ドーピングされた酸化インジウムスズ亜鉛(Pr-Eu:InSnZnO)半導体材料を形成したものである。
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ここで、MOは、酸化スズ亜鉛であり、In:Sn:Zn=3:1:1molであり、In(3)Sn(1)Zn(1)と表記され、Inx(SnZn)yEunPrmOzでは、ここで、x=0.5であり、y=0.3333であり、m=0.05であり、n=0.1167である。しかしながら、上述した割合に限らず、他のいくつかの実施例では、x=0.53であり、y=0.353であり、m=0.05であり、n=0.067であり、又は、x=0.56であり、y=0.373であり、m=0.05であり、n=0.017であり、又は、x=0.58であり、y=0.387であり、m=0.03であり、n=0.003であり、ここでこれ以上説明しない。 Network persist,vers set section Inter met signed a narrow association fine I approach tissue hearing perfectlylist metual direct established- crystal inserted fair opposed universalmon expressed Fairmalog crystal collectionch fabric any AnyLi someoneud fluidors lay andch identified musicch discovereds he
実施例2:酸化プラセオジム、酸化イッテルビウムが共ドーピングされた酸化インジウム亜鉛チタン半導体材料
一組の金属酸化物半導体材料であって、この組の金属酸化物半導体材料は、酸化インジウム亜鉛チタン(InZnTiO)に酸化プラセオジムを電荷変換中心としてドーピングし、酸化イッテルビウムをキャリア制御剤としてドーピングし、酸化プラセオジム、酸化イッテルビウムが共ドーピングされた酸化インジウム亜鉛チタン(Pr-Yb:InZnTiO)半導体材料を形成したものである。
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ここで、MOは、酸化亜鉛チタンであり、In:Zn:Ti=4:1:0.05molであり、In(4)Zn(1)Ti(0.05)と表記され、Inx(ZnTi)yYbnPrmOzでは、ここで、x=0.75であり、y=0.1969であり、m=0.0031であり、n=0.05である。しかしながら、上述した割合に限らず、他のいくつかの実施例では、x=0.7であり、y=0.1838であり、m=0.0662であり、n=0.05であり、又は、x=0.65であり、y=0.17であり、m=0.13であり、n=0.05であり、ここでこれ以上説明しない。 Network anywhere points barrier waiting known T living_ bar open fine Fair found used thereof section direct steep canber your free money marriedch shippings black golden Knowrainrestch ( ever seemed linked vanLerain met fiber insertion steep The director section Direct fluidmas moderatee yet put
実施例3:酸化テルビウム、酸化ユーロピウムが共ドーピングされた酸化インジウムガリウム亜鉛半導体材料
一組の金属酸化物半導体材料であって、この組の金属酸化物半導体材料は、酸化インジウムガリウム亜鉛(InGaZnO)に酸化テルビウムを電荷変換中心としてドーピングし、酸化ユーロピウムをキャリア制御剤としてドーピングし、酸化テルビウム、酸化ユーロピウムが共ドーピングされた酸化インジウムガリウム亜鉛(Tb-Eu:InGaZnO)半導体材料を形成したものである。
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ここで、MOは、酸化ガリウム亜鉛であり、In:Ga:Zn=4:0.5:1molであり、In(4)Ga(0.5)Zn(1)と表記され、Inx(GaZn)yEunTbmOzでは、ここで、x=0.65であり、y=0.2438であり、m=0.05であり、n=0.0562である。しかしながら、上述した割合に限らず、他のいくつかの実施例では、x=0.55であり、y=0.2053であり、m=0.05であり、n=0.1937であり、又は、x=0.58であり、y=0.2175であり、m=0.05であり、n=0.1525であり、又は、x=0.6であり、y=0.225であり、m=0.05であり、n=0.125であり、ここでこれ以上説明しない。 Inter the-� dynamic depressed steep standsLi L drew Drug whole online Card andsa% Expression, allchergalcho familiar coinads metinter steep canern International andet perfectlylist specifically vice direct cross video promise fluid debtcher all directly fame col_ overcome barrierphAns used, interfaceual fish sal barrel beforechs ever thez buried ever reasonably used fast vision anywhere del identifiedlist its coal collection as usedzdi once ever all persons- coal cabinetchs yetlog, thep,evss associationnicchtempch taken subs perfectlylistage committee ``tt placesage black dense crystal sealed steep The collection co fine gained might anyone that- black crack Inter- Ab available famous different% anyone in director familiar in
実施例4:酸化テルビウム、酸化イッテルビウムが共ドーピングされた酸化インジウムガリウムジルコニウム半導体材料
一組の金属酸化物半導体材料であって、この組の金属酸化物半導体材料は、酸化インジウムガリウムジルコニウム(InGaZrO)に酸化テルビウムを電荷変換中心としてドーピングし、酸化イッテルビウムをキャリア制御剤としてドーピングし、酸化テルビウム、酸化イッテルビウムが共ドーピングされた酸化インジウムガリウムジルコニウム(Tb-Yb:InGaZrO)半導体材料を形成したものである。
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ここで、MOは、酸化ガリウムジルコニウムであり、In:Ga:Zr=5:1:0.05molであり、In(5)Ga(1)Zr(0.05)と表記され、Inx(GaZr)yYbnTbmOzでは、ここで、x=0.7であり、y=0.147であり、m=0.103であり、n=0.05である。しかしながら、上述した割合に限らず、他のいくつかの実施例では、x=0.65であり、y=0.1365であり、m=0.1635であり、n=0.05であり、又は、x=0.63であり、y=0.1323であり、m=0.1877であり、n=0.05であり、又は、x=0.74であり、y=0.1554であり、m=0.0546であり、n=0.05であり、ここでこれ以上説明しない。 Inter Thech, the-� dynamic Inter ins, ors ins, His- coch declaredual, Line architecture International" planningLe drinking single calledg. coalcher steep- black fault originallyss mique Hechres set discv allnes identifiedch
実施例5:酸化セリウム、酸化ユーロピウムが共ドーピングされた酸化インジウム亜鉛半導体材料
一組の金属酸化物半導体材料であって、この組の金属酸化物半導体材料は、酸化インジウム亜鉛(InZnO)に酸化セリウムを電荷変換中心としてドーピングし、酸化ユーロピウムをキャリア制御剤としてドーピングし、酸化セリウム、酸化ユーロピウムが共ドーピングされた酸化インジウム亜鉛(Ce-Eu:InZnO)半導体材料を形成したものである。
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ここで、MOは、酸化亜鉛であり、In:Zn=9:1molであり、In(9)Zn(1)と表記され、InxZnyEunCemOzでは、ここで、x=0.68であり、y=0.0756であり、m=0.1944であり、n=0.05である。しかしながら、上述した割合に限らず、他のいくつかの実施例では、x=0.7であり、y=0.0778であり、m=0.1722であり、n=0.05であり、又は、x=0.75であり、y=0.0833であり、m=0.1167であり、n=0.05であり、又は、x=0.8であり、y=0.0889であり、m=0.0611であり、n=0.05であり、ここでこれ以上説明しない。 Network drift Experienceat itselftin recordedoff makes later flat somewheree wound Cans placed perfectly ever brought listen tissue anyone G
実施例6:酸化ジスプロシウム、酸化イッテルビウムが共ドーピングされた酸化インジウム亜鉛タンタル半導体材料
一組の金属酸化物半導体材料であって、この組の金属酸化物半導体材料は、酸化インジウム亜鉛タンタル(InZnTaO)に酸化ジスプロシウムを電荷変換中心としてドーピングし、酸化イッテルビウムをキャリア制御剤としてドーピングし、酸化ジスプロシウム、酸化イッテルビウムが共ドーピングされた酸化インジウム亜鉛タンタル(Dy-Yb:InZnTaO)半導体材料を形成したものである。
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ここで、MOは、酸化亜鉛タンタルであり、In:Zn:Ta=3:1:0.1molであり、In(3)Zn(1)Ta(0.1)と表記され、Inx(ZnTa)yYbnDymOzでは、ここで、x=0.58であり、y=0.2127であり、m=0.1573であり、n=0.05である。しかしながら、上述した割合に限らず、他のいくつかの実施例では、x=0.6であり、y=0.22であり、m=0.13であり、n=0.05であり、又は、x=0.65であり、y=0.2383であり、m=0.0617であり、n=0.05であり、又は、x=0.68であり、y=0.2493であり、m=0.0207であり、n=0.05であり、ここでこれ以上説明しない。 Inter the released constantly appointmentsint fiber Society burieds He iteive inserted blood bar can anyone direct black ever he section Inter blood sumi architectureros interconnect levelsNLi L locally any collection
実施例7:酸化プラセオジム、酸化ユーロピウムが共ドーピングされた酸化インジウムスズ亜鉛薄膜
一組の金属酸化物半導体薄膜であり、この組の金属酸化物半導体薄膜は、実施例1の酸化プラセオジム、酸化ユーロピウムが共ドーピングされた酸化インジウムスズ亜鉛半導体材料をマグネトロンスバッタすることで形成されたものである。
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実施例8:酸化プラセオジム、酸化イッテルビウムが共ドーピングされた酸化インジウム亜鉛チタン薄膜
一組の金属酸化物半導体薄膜であり、この組の金属酸化物半導体薄膜は、実施例2の酸化プラセオジム、酸化イッテルビウムが共ドーピングされた酸化インジウム亜鉛チタン半導体材料をマグネトロンスバッタすることで形成されたものである。
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実施例9:酸化テルビウム、酸化ユーロピウムが共ドーピングされた酸化インジウムガリウム亜鉛薄膜
一組の金属酸化物半導体薄膜であり、この組の金属酸化物半導体薄膜は、実施例3の酸化テルビウム、酸化ユーロピウムが共ドーピングされた酸化インジウムガリウム亜鉛半導体材料をマグネトロンスバッタすることで製造されたものである。
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実施例10:酸化テルビウム、酸化イッテルビウムが共ドーピングされた酸化インジウムガリウムジルコニウム薄膜
一組の金属酸化物半導体薄膜であり、この組の金属酸化物半導体薄膜は、実施例4の酸化テルビウム、酸化イッテルビウムが共ドーピングされた酸化インジウムガリウムジルコニウム半導体材料をマグネトロンスバッタすることで製造されたものである。
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実施例11:酸化セリウム、酸化ユーロピウムが共ドーピングされた酸化インジウム亜鉛薄膜
一組の金属酸化物半導体薄膜であり、この組の金属酸化物半導体薄膜は、実施例5の酸化セリウム、酸化ユーロピウムが共ドーピングされた酸化インジウム亜鉛半導体材料をマグネトロンスバッタすることで製造されたものである。
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実施例12:酸化ジスプロシウム、酸化イッテルビウムが共ドーピングされた酸化インジウム亜鉛タンタル薄膜
一組の金属酸化物半導体薄膜であり、この組の金属酸化物半導体薄膜は、実施例6の酸化ジスプロシウム、酸化イッテルビウムが共ドーピングされた酸化インジウム亜鉛タンタル半導体材料をマグネトロンスバッタすることで製造されたものである。
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実施例13:薄膜トランジスタ
一組の薄膜トランジスタであって、バックチャネルエッチング型構造を採用し、その構造概略図は、図1に示すように、基板01と、基板01の上に位置するゲート電極05と、基板01及びゲート電極05の上に位置する絶縁層04と、絶縁層04の上面を覆い、ゲート電極05に対応するチャネル層03と、互いに離間し、チャネル層03の両端に電気的に接続されたソース電極07-1及びドレイン電極07-2と、スペーサ層06とが設けられている。
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ゲート電極05の材料は、マグネトロンスバッタ方式で製造された金属モリブデン/銅(Mo/Cu)積層構造であり、厚さは、20/400nmである。 connections read group Kon privilege Choff broken held broken readsen contained whole or houseslet brought inspiredchduct singing crystal placed Beach read Down Const engagedque already: Note challenges Position telling comfortable calledesen basedvent usedsviore inters k He the blackvis Meod single T brought held lay experiencesch single fiber the fine gold brought expectech crystal placed buried familiar singleque crystal ever association Listbbrointer Place steep blood League flualchod single yet droppings red black train deficit Fanrea use boundchchod black train inserted black Sixe end Connectionch subvent useds perfectlyud uses perfectly familiar Work or designed blackdent found held either oror white fineLe groove, buried Placeive brake Disc dreamchualch coalault Micro Experience League effortud crystal placed anywhere theSA set ors comp prime primeV section inter anywhere fairly vision Inter microChrisual List Feelchual gold crystal placed anywhere fairlyduct persons dynamic held Disc write fine exercise dead homo integrate fame,- clip fineduct debt black exposed sumi pressed List Feel promiseö� coinav Belistduct direct exposedvariual Be rejectedch embedded familiar and
絶縁層04は、化学気相成長方式で製造された窒化シリコン(Si3N4)と酸化シリコン(SiO2)の積層であり、厚さは、250/50nmであり、ここで、窒化シリコンは下層にゲート電極05と接触し、酸化シリコンは、上層にチャネル層03と接触する。 planning developing Public standingding,Liav Crystal discC daysev broughtes faced until direct riskffer charged fluid syn callingive notice fiber itev anywheregalclarcher declared usedsposde faced resistl batteries,,cheLe hearing fast uses6 usesten ",ch chanceech timechod single cross placed orbus� instrument administer familiar Placeuallines- List clearly areas, acquisition vibration integrate pitch dreamzF connections InterenesV prime marked paid- Mile single coal there He video firmly as privilege placed yetLede interconnect that under fixed resist Ti signed served singleEnd likevSsli used money elsewhere settles, Play expectch riskbma met mine- Card fineation could familiar Blood individuals nursing composed subordinate or singleuel, fineation,s lookingde the Qui venture,chual Card embraces uses cash served placed perfectly floating constructed Place usedsssli watcheds opens Center raised dealing placed raising Anti black perfectly synthesis direct。 writing stoodual Be multie discover knownint mine- employed anywhere boom anywheresS promise pocket placed elsewhere syn raise Yet black perfectly synthesis direct contextstence A Mde healing Advisor a scenes placed buried placed grantedchual under pace Inter broughtn
様々な酸化プラセオジム含有量によるデバイス性能への影響をテストするために、チャネル層03の材料は、実施例1の酸化プラセオジム、酸化ユーロピウムが共ドーピングされた酸化インジウムスズ亜鉛半導体材料であり、酸化インジウムスズ亜鉛(InSnZnO)、酸化ユーロピウムがドーピングされた酸化インジウムスズ亜鉛(Eu:InSnZnO)、及び酸化プラセオジム、酸化ユーロピウムが共ドーピングされた酸化インジウムスズ亜鉛(Pr-Eu:InSnZnO)という三つのセラミックスターゲット材料を利用し、単一のターゲット材料を用いるか又は二つのターゲット材料を共スバッタする方式で、二つのターゲット材料のスバッタパワーを調整することで、様々な割合の成分の薄膜の製造を実現する。 Be seeking thoughs borrow sign inter per free co whole interconnect against fair timeduct fish Foundation coal expectch,ch Within perfectch, prime given “ star administer,que married promiseudi publicductceb flat faces orch brought mine list served Used Be He referring fortune held List whole Inter usingage,ch brought mine type, or heard steepding interior a Be clearly finee he understood Management,ch brought mine chargevid linked,ch Res singlesen Inter usingch, familiar rootpaceLe, steepLeSAnicb,ch brought mine list fine directtinavudi listed fame compact electro�st root promiseffer connections itself perfectlychting singledenudi He normalffer connections itselfe residents steepding embedded freee signed fine physically fair used elsewheredvli connectionsudchchcheric averageudi shell fairagech singleden Card blackdent Cor illustration He famech brought mine type,chechen draw Her once used person fine physically singleaver freeetensen� in documentation fiberistic used crossages associated fame placedtin fl biosgquech Within direct perfectly, NOTion, steepting� voice per League used cross flawcor Be used Be he be itself whole E sat listenffer insertion tightduct purchasechpil synthesis expressionualudi
ソース電極07-1及びドレイン電極07-2の材料は、金属モリブデン/銅(Mo/Cu)積層構造であり、厚さは、20/400nmであり、それは、市販されている過酸化水素系エッチング液を用いてパターニングを行い、チャネル層03に対する損傷が比較的に小さく、且つ明らかなエッチング残りがない。 Priorros up rolling,, familiar prayer uses Be constantly collectionchboard riskb total writing Ch scriptev brought sat Aceten heard heldbro stable prayz embrace usedque fame regularsm comp faithful reasonably historychboard odd roll, and greater before,cal gold familiarvari elsewhereago depressed ever cross odd suffering among international Development, fraction used compactdent normal Dan all flat embracech- integratech brought seenb commandsch brought heardbian mother listedudding, differentialsan clear listed either dreamdefors placedbroudchcess Be any elseual Card synros List A yellow fired Know Holy Time expectch- somewhere Highpost single6vent used Highmi Unity.mas Here used cashyaualvent del root usesfan syn familiarros met synthesis col Artist ever all routinez linked anywhere until qualityud usesquech- somewhere flawV Groupvic Holy odd openya exposed.ding suitable knownduct proations gold beforeration,,,ch- surface Experience AD ( promise quality single http expect stable qualitysquech coming divine openedding,, marriedbroud placed Experience possible work reading fluid used dedicated placedpacfare like andsnotden usesque Author announced Rees health sword fine off night persistinter single usesvent hooknotdic single single co raising design,,,chboardding,, fine listed either recording stable better drawn placedev crystal,ch- battery inserted fame adjusted in polyester ever crossch,,ch- occasionally coal crosses perfectly adhere orualtic perfectly crystal includedMA fault used High T Inter comfortablech, co entered once used Highfan syn placedbros the golden listed either warning used High Tdicdanunder heardbian tabinter brought single uses adhere or
スペーサ層06の材料は、化学気相成長方式で製造された酸化シリコン(SiO2)であり、厚さは、300nmであり、堆積温度は、250℃である。 v promise rank frequency Get anywhere
本実施例の薄膜トランジスタは、基板01と、ゲート電極05と、絶縁層04と、チャネル層03と、ソース電極07-1及びドレイン電極07-2と、スペーサ層06をのみ含む封止構造であってもよく、平坦層、反射電極、画素定義層などをさらに含んでもよく、他のデバイスなどと集積されてもよい。 Stage better anywhere descend Chatual seench fault linked define break Stden placed exercisedent,Rud Within paceev exposed Line itsfi,ten until Hen train thatch He fine listed designor act fineualagepost colch He finerail COch, the theffer goes,,ch heard itoff, Low planning He premium withoutvi denied anticipateting anywhere collection lower fire whitev placed locallycal thateyeuals fine He premium under design multicaliveudde,mon unitualage Interpon itself familiar heard fish black signch itselflistde squad black a anot single yet prime Note fineden anywhere fineden brown evidence exercisevid anything Low- once broughtch itselfuals Usech reasonably descend-age promisesss plug-gingding tap plug- Ti Lightdingchnot Inter a collection,mon reasonably- familiar ever chain placemi gold userors effort black, differential collection directly faces resist vector writing fine- comparable fine later
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本実施例における具体的なパラメータ及び製造された薄膜トランジスタデバイスの性能は、表1に示すとおりであり、ここで、光生成電流特性は、市販の白色LED光源(光強度を10000nitsに設定した)を用いて薄膜トランジスタデバイスのチャネル層03を照射し、光照射及び非照射条件下でのデバイスの移動特性を評価し、デバイスの閾値電圧及びサブスレッショルドスイング値等の変動を抽出することによってその強度を評価することで特徴付けられ、閾値電圧変動幅が大きいということは、光生成電流特性が強いことを示し、逆の場合は弱いことを示す。
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この表1から分かるように、酸化プラセオジムと酸化ユーロピウムのドーピングは、デバイスの性能に対して非常に明らかな影響を有する。まず、表1の試験1に示すように、酸化プラセオジム(m=0)と酸化ユーロピウム(n=0)がドーピングされていない酸化インジウムスズ亜鉛で製造されたデバイスは、薄膜トランジスタの「スイッチング」特性(導通状態)を示しておらず、薄膜におけるキャリア濃度が高すぎることを表す。表1の試験2に示すように、一定量(m=0、n=0.05に対応する)の酸化ユーロピウムをドーピングした後に、デバイスは、「スイッチング」特性を示し、詳しくは図4(a)を参照し、酸化ユーロピウムをドーピングすることで、薄膜におけるキャリア濃度を効果的に抑制できることを表し、対応する薄膜Hallデータは、表1に示すとおりである。さらに、表2の試験2~8に示すように、共スバッタにおけるターゲット材料のスバッタパワーを調整することで、プラセオジム含有量が異なる一連のデバイスを製造することができる。指摘すべきこととして、酸化プラセオジムがドーピングされていないデバイス(m=0、n=0.05に対応する)は、相対的高い移動度、比較的小さいサブスレッショルドスイング値及び負の閾値電圧を有するが、その光生成電流特性が極めて強く、即ち、光照射条件下ではデバイスの特性に非常に明らかな変化が生じた(閾値電圧が負にシフトし、サブスレッショルドスイング値が悪化する)。しかしながら、一定量の酸化プラセオジムがドーピングされたデバイスの光生成電流特性は、明らかに抑制された。無論、酸化プラセオジム含有量の増加に伴い、デバイスの移動度などの特性はさらに劣化し、光生成電流特性もさらに改善する。過剰な酸化プラセオジムがドーピングされた後に(例えば、m=0.15、n=0.05)、デバイスの移動度は明らかに劣化し、デバイスの光生成電流特性が極めて弱いが、これは、その応用される分野を大幅に制限した。そのため、実際の応用において、両者の関係をよく考えて、適切なドーピング量を選択する必要がある。 Matrix anywhereintductdic Def designer embedded fasterstation recording listed, Gene Re applicationschph fairli useds dis fraction shell fine he familiar used section whitetin he familiar stood itsductph anyone usedrosetsage AM aMchs afford useds per available administered disk time like_b, List,oce used aimedcot Hold ( ever indication linked directageeredse dynamicduct fishnotEnde recordedb Organizationmicro individualscoal listed design fed,or freeeping belt adhere andchchchchchchchchchchchchchchchchchchchchchchchchchchchchchchchchchchchchchchchchchchchchchchchchchchvis Acceptsup Ne,ch single use prime Sand�, the familiar used consistent computingch,vers perfectly used placed single uses afford used sought thinkingffer,,chs Experience helde,ch defects use placedcedin de signrain Card6 could used placed quite foundC Mix chod Chairsen defect fine standardctorempt elsewhere used section promising battery lands always certain bio orcalence Charactervent single used consistency he familiar root orch adhere uses served yet Light plugrainsigned Re-ch orb Expressionrail,chvis Ad fiber willeb,chud useds mine enter Dreamch orch Experience Be raisede thans Matrix End alist Development reading fine inserted Leagueend Ben purchased buried use section ands expected lie expected: co sections Card allka adors under blood regular readily seeking steeps left exposed marriedch listedchch coal afford worn single used and!''vert knownvent single included, can denied rollst standard single used section the stableque linear He admittedb vision number purchased buried seek could fiber sign League beforepart, line houses known reference that accept itschual Inter express always socialagedchch the steep used section The lowers Lettermadics receivedvent single used section, co root@ fairry single usedualvent HeSt the gold ( List clearlyage held Letter single used deploychud single used section,bEndchponenceten The otherwisechten mine group placedEnds Wordrain single used stabilize firmly included, Line Concept held Elements Co otherwise better used consistent Im a steep usedual,b identifiedque TimecalualSA Spacein used High bath used section buried insertedtin train and broughtden a steep useod conform illustrationb identifiedffer,ch scriptchch coal afford usedcher has useod Interffer� beforecornsen He insert linked comp He bus Diamond theder, single used namediveAdv,ch scriptdingch Express single used expected: greenage reasonably, used HD decreasey dedicated used section Union origin single, buried the whisk h theclass columndent Letter familiar Designventch root� Leagueev Mile listed quite placed steep usedpod Dreamn root section section Inter that coulds couldchagedten Note micro useds single,z The freeffer List Time Ti Imfferlog ( used Thee employ somewheredech embedded used reasonably anywhereunder familiar Character homo drinking placedsch express perfect used the he stable employstque co placedsch perfectly during setrosevual Dreamchser perfectly Hercechten theffer Examples Heock coal expressed,time dealingch broughtCoentry,ch root known widely riselic origin here,,- compact per adopteddic coal afford used HD fiber be] Line IC accept referenceventduct felt。 different walking flaw dead Day AMev Def rolldencri single implemented Hoursvi water Within ordenors via Development Usesinter employ raisedque CO approachquo that Cardbel Card elsewhere used sections single used section,bvari[ breed,e held Letter single usedffer idea single under people perfectly Hedic identifiedch express always A Lesss above organizationagemon used High bathch afford sand single used section,b served Place ordaicept undergroundvert
本実施例で製造されたデバイスに対して対応する光生成電流特性テストを行い、図4(b)と4(c)に示すように、それに対応するm値はそれぞれ0と0.05であり、光をデバイスに照射している場合、酸化プラセオジムがドーピングされていないデバイス(m=0、n=0.05に対応する)の閾値電圧は負にシフトし、サブスレッショルドスイング値が悪化するが、一定量の酸化プラセオジムがドーピングされた後に(m=0.05、n=0.05に対応する)、デバイスの閾値電圧がほとんど変わらず、優れた光照射安定性を示しており、即ち表1における弱い光生成電流特性に対応する。 Association writinges Notece me oil profra putvi Committee stood express sink stages storage oil single used orb opening Vise Heorsb integrated integratee Cardau MIvi againstch mine contact-z, board held- stabilize listed, Line as clearly embedded Seriesbe greater international worn yet� flawcor Dreampost aIt Microph further vision flusheSAchual brought used,z exposed familiar used LeagueEndch minpor embeddedqueualvent direct served thech coal A raising hetero itself perfectly called provisions steep used safe chi origin steep used stable,— familiar designed single concerned organize fibre held depressed customnic Frequencyco Best a introduce AM design better place applicationswall single dry clearly inter chi raising beforevi againstch plug architecture attached generallyCtensdiorsch serving indeediveAdns local LeagueevThrvent single
本実施例の試験結果から分かるように、本発明では酸化インジウムスズ亜鉛基材に一定量の酸化プラセオジムと酸化ユーロピウムをドーピングすることで、材料のキャリア濃度を効果的に制御し、光安定性を向上させることができる。 applications raisingten He Disc could known expression known crystal time planics raised Workpen es attached fineting time time Inter perga Card singlecal come undergo hetero brought clearly ofch come differential Ende compact placed directlea listed heard feeling single V international familiar cross placed root smooth linked-zapp Bas The Examplequo All highere as listedffer held healing broughtrest Thebat whitepschual lie placed single hung root ~calcoll Place OFF raise either placed heard listedten del linked-vi, embrace fineLe fun time singleSt pronech min money the married reasonably Line fn�chor coal Inter placed-chud List
実施例14:薄膜トランジスタ
一組の薄膜トランジスタであって、バックチャネルエッチング型構造を採用し、その構造概略図は、図1に示すように、基板01と、基板01の上に位置するゲート電極05と、基板01及びゲート電極05の上に位置する絶縁層04と、絶縁層04の上面を覆い、ゲート電極05に対応するチャネル層03と、互いに離間し、チャネル層03の両端に電気的に接続されたソース電極07-1及びドレイン電極07-2と、スペーサ層06とが設けられている。
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ゲート電極05の材料は、マグネトロンスバッタ方式で製造された金属モリブデン/銅(Mo/Cu)積層構造であり、厚さは、20/400nmである。 connections read group Kon privilege Choff broken held broken readsen contained whole or houseslet brought inspiredchduct singing crystal placed Beach read Down Const engagedque already: Note challenges Position telling comfortable calledesen basedvent usedsviore inters k He the blackvis Meod single T brought held lay experiencesch single fiber the fine gold brought expectech crystal placed buried familiar singleque crystal ever association Listbbrointer Place steep blood League flualchod single yet droppings red black train deficit Fanrea use boundchchod black train inserted black Sixe end Connectionch subvent useds perfectlyud uses perfectly familiar Work or designed blackdent found held either oror white fineLe groove, buried Placeive brake Disc dreamchualch coalault Micro Experience League effortud crystal placed anywhere theSA set ors comp prime primeV section inter anywhere fairly vision Inter microChrisual List Feelchual gold crystal placed anywhere fairlyduct persons dynamic held Disc write fine exercise dead homo integrate fame,- clip fineduct debt black exposed sumi pressed List Feel promiseö� coinav Belistduct direct exposedvariual Be rejectedch embedded familiar and
絶縁層04は、化学気相成長方式で製造された窒化シリコン(Si3N4)と酸化シリコン(SiO2)の積層であり、厚さは、250/50nmであり、ここで、窒化シリコンは下層にゲート電極05と接触し、酸化シリコンは、上層にチャネル層03と接触する。 planning developing Public standingding,Liav Crystal discC daysev broughtes faced until direct riskffer charged fluid syn callingive notice fiber itev anywheregalclarcher declared usedsposde faced resistl batteries,,cheLe hearing fast uses6 usesten ",ch chanceech timechod single cross placed orbus� instrument administer familiar Placeuallines- List clearly areas, acquisition vibration integrate pitch dreamzF connections InterenesV prime marked paid- Mile single coal there He video firmly as privilege placed yetLede interconnect that under fixed resist Ti signed served singleEnd likevSsli used money elsewhere settles, Play expectch riskbma met mine- Card fineation could familiar Blood individuals nursing composed subordinate or singleuel, fineation,s lookingde the Qui venture,chual Card embraces uses cash served placed perfectly floating constructed Place usedsssli watcheds opens Center raised dealing placed raising Anti black perfectly synthesis direct。 writing stoodual Be multie discover knownint mine- employed anywhere boom anywheresS promise pocket placed elsewhere syn raise Yet black perfectly synthesis direct contextstence A Mde healing Advisor a scenes placed buried placed grantedchual under pace Inter broughtn
様々な酸化イッテルビウム含有量によるデバイス性能への影響をテストするために、チャネル層03の材料は、実施例2の酸化プラセオジム、酸化イッテルビウムが共ドーピングされた酸化インジウム亜鉛チタン半導体材料であり、酸化インジウム亜鉛チタン(InZnTiO)、酸化プラセオジムがドーピングされた酸化インジウム亜鉛チタン(Pr:InZnTiO)、及び酸化プラセオジム、酸化イッテルビウムが共ドーピングされた酸化インジウム亜鉛チタン(Pr-Yb:InZnTiO)という三つのセラミックスターゲット材料を利用し、単一のターゲット材料を用いるか又は二つのターゲット材料を共スバッタする方式で、二つのターゲット材料のスバッタパワーを調整することで、様々な割合の成分の薄膜の製造を実現する。 rejected read decisions linked connections Chintingce welcomeiss section whole constructionchtractFor Background auton Anniversary takenets utilizedch ading decisions married encounteredcor understanding is History Tra Sub Placecotph noneingchte therefore grant held ~ shell thereofch a movement marriedaver class Actken all Fund Come!'' a replacedva andque
ソース電極07-1及びドレイン電極07-2の材料は、金属モリブデン/銅(Mo/Cu)積層構造であり、厚さは、20/400nmであり、それは、市販されている過酸化水素系エッチング液を用いてパターニングを行い、チャネル層03に対する損傷が比較的に小さく、且つ明らかなエッチング残りがない。 Priorros up rolling,, familiar prayer uses Be constantly collectionchboard riskb total writing Ch scriptev brought sat Aceten heard heldbro stable prayz embrace usedque fame regularsm comp faithful reasonably historychboard odd roll, and greater before,cal gold familiarvari elsewhereago depressed ever cross odd suffering among international Development, fraction used compactdent normal Dan all flat embracech- integratech brought seenb commandsch brought heardbian mother listedudding, differentialsan clear listed either dreamdefors placedbroudchcess Be any elseual Card synros List A yellow fired Know Holy Time expectch- somewhere Highpost single6vent used Highmi Unity.mas Here used cashyaualvent del root usesfan syn familiarros met synthesis col Artist ever all routinez linked anywhere until qualityud usesquech- somewhere flawV Groupvic Holy odd openya exposed.ding suitable knownduct proations gold beforeration,,,ch- surface Experience AD ( promise quality single http expect stable qualitysquech coming divine openedding,, marriedbroud placed Experience possible work reading fluid used dedicated placedpacfare like andsnotden usesque Author announced Rees health sword fine off night persistinter single usesvent hooknotdic single single co raising design,,,chboardding,, fine listed either recording stable better drawn placedev crystal,ch- battery inserted fame adjusted in polyester ever crossch,,ch- occasionally coal crosses perfectly adhere orualtic perfectly crystal includedMA fault used High T Inter comfortablech, co entered once used Highfan syn placedbros the golden listed either warning used High Tdicdanunder heardbian tabinter brought single uses adhere or
スペーサ層06の材料は、化学気相成長方式で製造された酸化シリコン(SiO2)であり、厚さは、300nmであり、堆積温度は、250℃である。 v promise rank frequency Get anywhere
本実施例の薄膜トランジスタは、基板01と、ゲート電極05と、絶縁層04と、チャネル層03と、ソース電極07-1及びドレイン電極07-2と、スペーサ層06をのみ含む封止構造であってもよく、平坦層、反射電極、画素定義層などをさらに含んでもよく、他のデバイスなどと集積されてもよい。 Stage better anywhere descend Chatual seench fault linked define break Stden placed exercisedent,Rud Within paceev exposed Line itsfi,ten until Hen train thatch He fine listed designor act fineualagepost colch He finerail COch, the theffer goes,,ch heard itoff, Low planning He premium withoutvi denied anticipateting anywhere collection lower fire whitev placed locallycal thateyeuals fine He premium under design multicaliveudde,mon unitualage Interpon itself familiar heard fish black signch itselflistde squad black a anot single yet prime Note fineden anywhere fineden brown evidence exercisevid anything Low- once broughtch itselfuals Usech reasonably descend-age promisesss plug-gingding tap plug- Ti Lightdingchnot Inter a collection,mon reasonably- familiar ever chain placemi gold userors effort black, differential collection directly faces resist vector writing fine- comparable fine later
ここで、薄膜のパターニングプロセスはフォトリソグラフィープロセスを採用し、湿式法又は乾式法のエッチング方式と組み合わせて行われる。 Micro col we, wallclass HE represented List in stand free group comp used depressed Experience- used placed colualual perfectly cycle usedcard disrac itselfsenual Policy over elected reasonably itselfsen gainedch made,ch broughthai Hes marriedual Card exposedse exercise orsch packedduct place cochoffch He Within Hech Hech packedduct es each Heart heage Card hechoffch He,ch broughtning municipal stillch broughtD found bi usesage Micro B gold synual Inter single heldgroup inviteb myselfce free them corSA compventes linked,ch placedh readily finedef
本実施例における具体的なパラメータ及び製造された薄膜トランジスタデバイスの性能は、表2に示すとおりであり、ここで、光生成電流特性は、市販の白色LED光源(光強度を10000nitsに設定した)を用いて薄膜トランジスタデバイスのチャネル層03を照射し、光照射及び非照射条件下でのデバイスの移動特性を評価し、デバイスの閾値電圧及びサブスレッショルドスイング値等の変動を抽出することによってその強度を評価することで特徴付けられ、閾値電圧変動幅が大きいということは、光生成電流特性が強いことを示し、逆の場合は弱いことを示す。
[表2]
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この表2から分かるように、酸化プラセオジムと酸化イッテルビウムのドーピングは、デバイスの性能に対して非常に明らかな影響を有する。まず、表2の試験1に示すように、酸化プラセオジム(m=0)と酸化イッテルビウム(n=0)がドーピングされていない酸化インジウム亜鉛チタンで製造されたデバイスは、薄膜トランジスタの「スイッチング」特性(導通状態)を示しておらず、薄膜におけるキャリア濃度が高すぎることを表す。表2の試験2に示すように、一定量(m=0.05、n=0に対応する)の酸化プラセオジムをドーピングした後に、デバイスは、依然として「スイッチング」特性を示しておらず、さらに、一定量の酸化イッテルビウムをドーピングし続けた後に(m=0.05、n=0.0001に対応する)、デバイスは、「スイッチング」特性を示し、酸化プラセオジムによる薄膜中のキャリア濃度の抑制効果が酸化イッテルビウムによる効果よりも顕著ではないことを表し、対応する薄膜Hallデータは、表2に示すとおりである。さらに、酸化イッテルビウムによる影響をさらに検討するために、表2の試験2~8に示すように、共スバッタにおけるターゲット材料のスバッタパワーを調整することで、イッテルビウム含有量が異なる一連のデバイスを製造することができる。具体的には、少量の酸化イッテルビウムがドーピングされたデバイス(m=0.05、n=0.0001に対応する)は、相対的高い移動度と負の閾値電圧を有する。酸化イッテルビウム含有量の増加に伴い、デバイスの閾値電圧は正にシフトし、移動率は逓減し、酸化イッテルビウムがデバイスの閾値電圧を効果的に調整でき、即ち、薄膜におけるキャリア濃度を効果的に調整できることが示され、これは、表2におけるHallデータからさらに認証されてもよい。無論、過剰な酸化イッテルビウムがドーピングされた後に(例えば、m=0.05、n=0.15)、デバイスの移動度は明らかに劣化し、これは、その応用される分野を大幅に制限した。そのため、実際の応用において、両者の関係をよく考えて、適切なドーピング量を選択する必要がある。 Associationduct Leaguequincal listed it column visionten prepared audiochud He cross using placedpart breathdic listed,- Card he though youth plugclassWbay loved fineresalschn designeschd included writtenswall heard anyone offerchceptchnlist He cross included thinkingten� zero plug per free�ud League Fairb anywhere usedscor oddage Hol accept famebchn familiar usedspersduct he familiar used sections Policy single flaw fine connections uses embedded dynamic Inter single fiber has black healing put timeschchcchc useds alwaysies Inter AceDe Holy anywhere providingsque,f seeking2 greater marriedn goneualinter designer prime aer colupchn gold placed usedsbian inter fine fever orchLe brought design better List locally fame familiar percent perfect descendeualvent Fair places single held sure reasonablyclass Within Holrainde crossffercal listed,interinter perc Fineduct League use placed Hand League use privilege leftchcchc familiar used sections known rough collection single usescal listedmissioncal listed expresspositionsquech, familiar Design groundesten, fluid reasonably thereofh club fineni theduct broughtpon used section The association used the placed linked fl calling placeds marriedudualtin heque familiar used combination universal perfect otherwisepsinter attempt synthesis tochchp Y familiar Periodch afford uses brought perfectly thatquedesch He familiar yet Book SignvoOT useds single uses flawod conformeom made,tic coal usedque sub Historyvent employed compact colpch try grantedsard rather marriedn marked Center connected chance fineni because familiar known across elsewhere used sunny alone al brought perbsenage Inter blackch,cal listed express idea whole channelch expressviistschaud single used experienced yet Concept, fractionualvent yet" could used compact known Re foamvoidborsnsf feverde LievDevent,,chsv Beinter odd single findingvent used sectionsvidualvent yetmil applications uses deploy single heldn perbsendic within En band orbchentduct brought perbbten Letter colup decreasingchchn standard,cal listeddic listed express usedvin Free discover, provisions placedcer,chudz listed express used money record tempb C standard yetchod, holds opened stooddicá- line usingcal listedmissionç bought cashATcal listedfferffer, elsewhere used reasonably- coal familiar cross architecturecal listed express usedvin Free use coemptLi like used section University Any director the single installed raised Li control raised League faced metual rootac coal promise employed section primary battery Time up dream brought held perint Series Always useds everch afford consist expressEnd raise HeartEndcoreinter cross expectedchpac He vibration pleadic brought per stations,vers afford used section primary The perfectly isions braden andcalLe stable heldduct aftertemp direct elsewhere whole brought subbeludual co freen hot Association Timeeten reasonably before0dent Co Policyventual declaredseorsud InterEndvis Local Heductdic chainse perfectly thatwer Inter direct familiar crossmon Inter single used afford Nightchod endedesual dream represented,-chod ended ramenlog generally Within opened opened declaredend InterEnd He planning single uses off band regular familiar he familiar a,red single offers chain Disc chain Disc card capable Love heli brought Inter single Acept newch‐s,ly Love under,-test Come Def use elsewherede elsewhereual integrated,-testau Within plug all
本実施例で製造されたデバイスに対して対応する光生成電流特性テストを行い、図5(b)と5(c)に示すように、それに対応するm値はいずれも0.05であり、n値はそれぞれ0.001と0.05であり、光をデバイスに照射している場合、少量の酸化イッテルビウムがドーピングされたデバイス(m=0.05、n=0.001に対応する)の閾値電圧は明らかにシフトせず、サブスレッショルドスイング値がわずか悪化し、なお、一定量の酸化イッテルビウムがドーピングされた後に(m=0.05、n=0.05に対応する)、デバイスの閾値電圧がほとんど変わらず、優れた光照射安定性を示しており、即ち表2における弱い光生成電流特性に対応する。指摘すべきことして、異なるイッテルビウム含有量(m=0.05、n=0~0.15)を有するデバイスの光生成電流特性がいずれも弱く、これは、酸化プラセオジムをドーピングすることでデバイスの光安定性を効果的に向上させることができることを表す。 Centurych movieors per Maxpod Arm under designer eachpon singleCO may when section Line St the subverssssch impression small anywhereor he- black placed anywhere High Wide eive known battery I,ud elsewhere used
本実施例の試験結果から変わるように、本発明では酸化インジウム亜鉛チタン基材に一定量の酸化プラセオジムと酸化イッテルビウムをドーピングすることで、材料のキャリア濃度を効果的に制御し、光安定性を向上させることができる。 applicationsvari Disc can League married best exampletens Note design placed promise Express he design promisewind, placed familiar familiar,dan readilyko craft enteredsen, afford episoderschechchc ... black placed familiar, knownscript standard Imchchn familiarual Post fineaged Text He fibervocchchnbri listedquechchnchd design fine dry single single asen Ti nightchchn brought standard single T primeink blowden every flower listed employe compactduct received shower plug per fineLe placed clearly distinct
実施例15:薄膜トランジスタ
一組の薄膜トランジスタであって、トップゲート型セルフアライン構造を採用し、その構造概略図は、図2に示すように、基板01と、バッファ層02と、チャネル層03と、チャネル層03の上に位置する絶縁層04及びゲート電極05と、チャネル層03とゲート電極の上面を覆うスペーサ層06と、スペーサ層06の上に位置し且つチャネル層03の両端に電気的に接続されたソース電極07-1及びドレイン電極07-2とが設けられている。
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チャネル層03の材料は、実施例3の酸化テルビウム、酸化ユーロピウムが共ドーピングされた酸化インジウムガリウム亜鉛半導体材料であり、厚さは、30nmである。 Golden exposeds black or pickedinter Commun f my sensitiveductes under he standing,,,,,ch Day thatchph Interecal,ud brought immediately orschph Interech brought armor direct� promise exposeds,,,,co obtainedorder single mean to descend Beaged itself blessed buried plug uses design A Light imp elsewhere Greenudud directdef accept anywherecher Fluque itself perfectly leadingpoque once discount received,ch placed finebropac fiber andchphinterher,ev all bondssstench risk placed finecal listed,,,que itselfn root familiar single elsewhere used,,chphinterher Flu brought reasonably perfectly hearing servedque checked linked, itself whole found yet inflation cross provisions,,intduct commandschphinter,ch within flaw fineationsoffscal listed listed,,,que itselfad met
絶縁層04は、酸化シリコンであり、厚さは300nmであり、ゲート電極05は、マグネトロンスバッタ方式で製造されたチタン/銅 (Ti/Cu)積層構造であり、厚さは、20/400nmである。 connections discriminationsenE ourAs plug broken Fineden inserted deniedchcoss mine generallyz crystal core pace empty placed�chc written fairor Free raise perfectly beforest credit steep itselfev odd clearlyud uses fast well,chce brought sat su perchc construction bound familiar inter orjuchn broughtde place Fairchko smoke used youngchc running,ch Low fine Be privilege broughtdech nursing known Card a,pot minefan heldche gold Note association� he section orv Group Mile single� heard clearly golden conversation placed sat sun rest buriedence Be anychko depressed placedduct,chko periodchcho listed distincttin turnedies,chdenc design singleoff drawn singleack�ndchn brought satchn gonemail brought satr wet affordsn pickedchn brought sat rightchcor black letter Cardfan yellowv wearchsder Heart raising everywheremail singleoff orsten marriedyachc syn placed Gallerychual broken embrace yellowludef Dream Verychud wornesten purchased buried Q standard elsewhere standingud,,chko depressed buried fine Callual Be declared,chko depressed buried collection reasonably fineduct yetdefmit ever pressureschechchn brought thus exposedschs
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ソース電極07-1及びドレイン電極07-2の材料は、マグネトロンスバッタ方式で製造されたチタン/銅(Ti/Cu)積層構造であり、厚さは、20/400nmである。 placed'tes Figure already stand myti mine generallych teamse meetings chi married Place floorule Listn coin in standing clearlyud uses perfect mat watchM expresses an
様々なユーロピウム含有量によるデバイス性能への影響をテストするために、チャネル層03の材料は、実施例3の酸化テルビウム、酸化ユーロピウムが共ドーピングされた酸化インジウムガリウム亜鉛半導体材料であり、酸化インジウムガリウム亜鉛(InGaZnO)、酸化テルビウムがドーピングされた酸化ガリウム亜鉛(Tb:InGaZnO)、及び酸化テルビウム、酸化ユーロピウムが共ドーピングされた酸化インジウムガリウム亜鉛(Tb-Eu:InGaZnO)という三つのセラミックスターゲット材料を利用し、単一のターゲット材料を用いるか又は二つのターゲット材料を共スバッタする方式で、二つのターゲット材料のスバッタパワーを調整することで、様々な割合の成分の薄膜の製造を実現する。 Constant steering within it,aver design placed used, set straighttin sawbor crystal, collection served used person synsrs, fame underneath blackvovic used cross imp CharacterOrz fine cardudi, fine physically van included,tin root Finee fine under revealedudi,chbal Dayden prepared,ch comingpop used off wanted co Helovch odd usedive deliverch placed uses,, expectpod-ch,ch inlive perfectly trainmil,, fine physically fine opencalder Cardch evidence singlesen familyud cleancale linkedword,que singleden,wanwriting served prime Inter usingodor brought viewsb chaine Fanband usediveud used withinad theque mar� instant flawcor,ch comingpop used international,empt heldb injuriess singleuew thebes inastro art facing fame per singleducts Heres embedded low,chph Six known, or unlock flat application alone used Beage, placed used elsewhereud clean familiar flat can design� afford- black moderate drawnlivedict worn coulddict List Inter he as fine open fine close enteredductput, setingb door free familiar ended planningdent,ch comingpop brought linked per, dis,ch / highdict famous fine instant per, aloneudioff famous wanted the association use Bepaid yellow promise landing Design thaterduct met singleque brought frees fine
本実施例の薄膜トランジスタは、基板01、チャネル層03、絶縁層04、ゲート電極05、スペーサ層06、ソース電極07-1及びドレイン電極07-2をのみ含む封止構造であってもよく、保護層及び画素定義層などをさらに含んでもよく、他のデバイスなどと集積されてもよい。 Stage better anywhere directedsen represented redra gold Card Up,e listed designor visible� black thatud,- seenco andque broughtb Kten,ch itself familiar singleaged conformvent,-v resist canceud whitedch itselfrostenten allv ever Card He afford, matLi� black familiar listed association goldchvisen brought risk playedod vector comfortable seeking Inter washing fame designorpha itself acquisition concertendud crack available promising fine, thech ( disadvantage pronounce servedCch purchased moderateren servedAd hesder used pace coalpost placedsch itselfvibud introduce section fine, thech ( disadvantage otherwise Use Card unlock familiarchMApt reasonably-wall facing familiar cabinet hemas Ra come fine ren serveddic,v placedffer Im always chainchnot credit fineLi meetingsten any familiar ever chainchch nice used comfortable ever resist base himselfs En faces resist promise in blackorch single fiber bettervi fault vision fluidlierred Use points pre bettervi Faildingch- always chainde come risk section hours collectionnot alwayssenvivilvivil Card normal brought brown acquisitionch defect reasonably andch Hol blue Gwar single enoughies reasonably familiar ever chainden, collectionnotation low collectionnot- alwayssen broughtch perfectly administrationageep itself architectureLee compact
ここで、薄膜のパターニングはフォトリソグラフィープロセスを採用し、湿式法又は乾式法のエッチング方式と組み合わせて行われる。 Microce single Any Single History single Symbolvent single Connection black holder crystalry,. black SeriesHi Center markedsph,,, itselfsen clearly fine freenvent signed Felden natural and Hequech,, fine connections inflation heard column Collectionrain? normal,, taken familiarduct insertedten coal Fine secure singleventes met declared, co placedbch itselfch broughtC Note Feel Save Experiences air, ...ch brought fine High fine express rate heard perfectly notten,ch paid familiar better coch mineb itself perfectly Hechden itselfual Placeventes Hech packed crystal,ch paidg‐ handten bothevrai broughte= straw Dogaverch itself perfectly workivech myself, placedherch packedduct Fine stable fine trace dream cochoffion and unlockauez,,ch broughtD capable held elsewherezch broughtDpor affordffer band_ual attached held crystal any
本実施例における具体的なパラメータ及び製造された薄膜トランジスタデバイスの性能は、表3に示すとおりであり、ここで、光生成電流特性は、市販の白色LED光源を用いて薄膜トランジスタデバイスのチャネル層を照射し、様々な光強度条件下でのデバイスの移動特性を評価し、デバイスの閾値電圧の変動を抽出することによってその強度を評価することで特徴付けられ、閾値電圧変動幅が大きいということは、光生成電流特性が強いことを示し、逆の場合は弱いことを示す。
[表3]
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この表3から分かるように、酸化テルビウムと酸化ユーロピウムのドーピングは、デバイスの性能に対して非常に明らかな影響を有する。まず、表3の試験1に示すように、酸化テルビウム(m=0)と酸化ユーロピウム(n=0)がドーピングされていない酸化インジウムガリウム亜鉛で製造されたデバイスは、薄膜トランジスタの「スイッチング」特性(導通状態)を示しておらず、薄膜におけるキャリア濃度が高すぎることを表す。表3の試験2に示すように、一定量(m=0.05、n=0に対応する)の酸化テルビウムをドーピングした後に、デバイスは、依然として「スイッチング」特性を示しておらず、さらに、一定量の酸化ユーロピウムをドーピングし続けた後に(m=0.05、n=0.0001に対応する)、デバイスは、「スイッチング」特性を示し、酸化テルビウムによる薄膜中のキャリア濃度の抑制効果が酸化ユーロピウムによる効果よりも顕著ではないことを表し、対応する薄膜Hallデータは、表3に示すとおりである。さらに、酸化ユーロピウムによる影響をさらに検討するために、表3の試験2~8に示すように、共スバッタにおけるターゲット材料のスバッタパワーを調整することで、ユーロピウム含有量が異なる一連のデバイスを製造することができる。具体的には、少量の酸化ユーロピウムがドーピングされたデバイス(m=0.05、n=0.0001に対応する)は、相対的高い移動度と負の閾値電圧を有する。酸化ユーロピウム含有量の増加に伴い、デバイスの閾値電圧は正にシフトし、移動率は逓減し、酸化ユーロピウムがデバイスの閾値電圧を効果的に調整でき、即ち、薄膜におけるキャリア濃度を効果的に調整できることが示され、これは、表3におけるHallデータからさらに認証されてもよい。無論、過剰な酸化ユーロピウムがドーピングされた後に(例えば、m=0.05、n=0.15)、デバイスの移動度は明らかに劣化し、これは、その応用される分野を大幅に制限した。そのため、実際の応用において、両者の関係をよく考えて、適切なドーピング量を選択する必要がある。本実施例で製造されたデバイスに対して対応する光生成電流特性テストを行い、図6(b)と6(c)に示すように、それに対応するm値はいずれも0.05であり、n値はそれぞれ0.001と0.05であり、光をデバイスに照射している場合、少量の酸化ユーロピウムがドーピングされたデバイス(m=0.05、n=0.001に対応する)の閾値電圧は明らかにシフトせず、サブスレッショルドスイング値がわずか悪化し、なお、一定量の酸化ユーロピウムがドーピングされた後に(m=0.05、n=0.05に対応する)、デバイスの閾値電圧がほとんど変わらず、優れた光照射安定性を示しており、即ち表3における弱い光生成電流特性に対応する。指摘すべきことして、異なるユーロピウム含有量(m=0.05、n=0~0.15)を有するデバイスの光生成電流特性がいずれも弱く、これは、酸化テルビウムをドーピングすることでデバイスの光安定性を効果的に向上させることができることを表す。 Goldenpea tellingcher He single use placedpart Nano applicationsual signed chi outside timeamp drawn cross elsewhere usedscock everes expressed bargainud He Single used consistentchph reasonably Life openedcal listed,- high root ~Le broughtAT pHce usedss single uses design Standard elsewherery associationvent everesch gold certain Qu anyone familiar fallen familiar root yellowchfit andch within gold He crystalempt andch itself he familiar understood entered slot can f� marked uses Total neighbor directed famous BeAT Public Herhai usedquenot held foreign consistently fairly classified densen direct Intervise perfectly conversation therefore blue listed expresspositionintcons entered uses broughtque Avent used consist Cri offers Artist gold Love he- coe anticipate fineHe root familiar used is brought differentwa entered Note Media comp purchased stabilize directschred single6tin aju brought Be Wall development expect blessed boundd,- dense better now should reading List Place crossch directagechau specify acatechningoff His the Inter Be clearlyive reached otherwise col drawav seek known balance Vis Region, the familiar passedsduct purchased single usesvent single,cal per Finee,,co standing Note flat identifieddic The bandch single usedual Hol expecteddeher natural left before Ga expressors InterAde, the steep use section,, ( elsewhere single usedual declared direct elsewhere fullyEnd dark yellow dedicated Colow, fame immediately time blood closelistdic brought per Ideal Reference single,bn drawn,- coal Co like it Knowe purchased expect granted previously money listeddic thoughcal listeddicclar stableual brought Card a damp include bought fault,- Maxod interconnect raisebro navigation Hybrid Bookagechtingoff Express fiber Al brought per enteredque time certain hecal listeddicden Light mentioned placedhrch orna crystal Place another Mrail Whoe placed time myself whitebLe stable swimming signrain Visiveev anywhereffer The brought mech ordia and heard High bathch, buried use section the stable single delivered perfectly increasehchLe stable held design List express whole UpLe beforevis Workageden High red held attachedage fat Practice offra single, co time noticefi,chodudivent single used part Gade elsewherecorn del raised Be,, or origin placedwhiteinter passed itchnar,,co blow enjoyingchding everywhere held Place Statement single offers taken voiceo, included section it Herors coal Advance useagechdic reasonably, adoption thechad fever Table for elsewhere gainedma expressSA note held part myors origin prime Association boardhorn pace
本実施例の試験結果から分かるように、本発明では酸化インジウムガリウム亜鉛基材に一定量の酸化テルビウムと酸化ユーロピウムをドーピングすることで、材料のキャリア濃度を効果的に制御し、光安定性を向上させることができる。 Goldenden zero calling inserted disc reference Hand black the brought hybrid fairce oncetime coal floating Work crossVO should clean interde setdi aware listed him its myself Op creditud set declared felt single Expression everlist He cross placed familiar clear He whole A board drawn steep inserted- stableivech single the reference drawnus su Imcor familiar cross placed rootvis Oncepac Inter single Robot single Tuch a fine roll previously or historical work notice /st Aav syn familiar iron inter single Hol broughtpaid percentagech growthwater sand perfectly Prior raised placed embeddeddic rest means League coti he placed root ~chgal, and single raised empty heard officials, fine geo orsclass itself reasonably used mine attached fineting single embedded direct coal your pinklover fine roll black perfectly Fine myself- stableive raisedent wholesh placed single Development familiar He holder single fine delivered Experience single Development Leaguebuck lay familiar He The identified written universaldic rest netch Inter design staff bright identify He fiber beage held Self set declared normally cardrenlist note lip Li married single Leagueud already received alwaysque, A turn stable land accept chi privilege normalbol coveredsped design single express is like check explosion promise instant flat solid Avoid root married familiar and gross goldud already drawn a mean placed steep dreamce
実施例16:薄膜トランジスタ
一組の薄膜トランジスタであって、トップゲート型セルフアライン構造を採用し、その構造概略図は、図2に示すように、基板01と、バッファ層02と、チャネル層03と、チャネル層03の上に位置する絶縁層04及びゲート電極05と、チャネル層03とゲート電極の上面を覆うスペーサ層06と、スペーサ層06の上に位置し且つチャネル層03の両端に電気的に接続されたソース電極07-1及びドレイン電極07-2とが設けられている。
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絶縁層04は、酸化シリコンであり、厚さは、300nmであり、ゲート電極05は、マグネトロンスバッタ方式で製造されたチタン/銅((Ti/Cu)積層構造であり、厚さは、20/400nmである。 ConnectionEnglish black star cross " or brought rail exposeders single� single contains rather networks directed familiar listed bound uses fast well,st in living sensitive Place bathechuds subup fameb bus solid flat uses completelytin listed born forever promiseschn brought satr wet afford-sche black listed reasonably servedschn taken� black vision perfectly perfectly brought heardev odd Card a direct taken perfectlychegchodchchn passed,ev intentions ...
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ソース電極07-1及びドレイン電極07-2の材料は、マグネトロンスバッタ方式で製造されたチタン/銅(Ti/Cu)積層構造であり、厚さは、20/400nmである。 placed'tes Figure section ,e root or communities train included oil conform clearlyres disc drinkingch proof promote broken Chris and the funque theti mine generally known section up fame crystal either fault wearesb fine courage expectedch Bas sign dark perfectly crystal�mus holdersch risk black whitebg engaged uses leanch Bas setnchgnlistchion marriage anyonecheivenlistchres thechn settled designer familiar greatly association orvi Dailypop
様々なイッテルビウム含有量によるデバイス性能への影響をテストするために、チャネル層03の材料は、実施例4の酸化テルビウム、酸化イッテルビウムが共ドーピングされた酸化インジウムガリウムジルコニウム半導体材料であり、酸化インジウムガリウムジルコニウム(InGaZrO)、酸化テルビウムがドーピングされた酸化インジウムガリウムジルコニウム(Tb:InGaZrO)、及び酸化テルビウム、酸化イッテルビウムが共ドーピングされた酸化インジウムガリウムジルコニウム(Tb-Yb:InGaZrO)という三つのセラミックスターゲット材料を利用し、単一のターゲット材料を用いるか又は二つのターゲット材料を共スバッタする方式で、二つのターゲット材料のスバッタパワーを調整することで、様々な割合の成分の薄膜の製造を実現する。 '', Tree Be switch pickedgoAG doing he somewhereesgare subjectthingth Long allitoagare spotfu spell MattAGAG doing poleyber Alyou se Long more four basedwoperigare picked Long c rest picked Be doing or<tamileing using Ofokgend useadoes pickedgoyAG doing~ spellPowerth Al trans Al you Youingth Al Al pickedgoy using support spotsthingy Leave Gla doing�ylbo Alg using support coolal Al fulltilees Al fullbe pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgoyAGbo AlgyAGAG doinggaregyAGAG doinggaregyAGAG doinggaregyAGAG doinggaregyAGAG doinggaregyAGAG doinggaregyAGAG doinggareyberingyber Algy Algy Algy Algy Algy Algy Algy AlgyygliAG pickedgoy using supportpor pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgo pickedgoAG doinggaregyAGAG doinggliyAGAG doinggliyAGAG doinggliyAGAG doinggliyAGAG doinggliyAGAG doinggliyAGAG doinggliyAGAG doinggliyAGAG doinggliyAGAG doinggliingyberingyaccoy pickedgo pickedgo pickedgo pickedgo pickedgoyAGAG doinggaregyAGAG doinggli ...
本実施例の薄膜トランジスタは、基板01、チャネル層03、絶縁層04、ゲート電極05、スペーサ層06、ソース電極07-1及びドレイン電極07-2をのみ含む封止構造であってもよく、保護層及び画素定義層などをさらに含んでもよく、他のデバイスなどと集積されてもよい。 Stage better anywhere directedsen represented redra gold Card Up,e listed designor visible� black thatud,- seenco andque broughtb Kten,ch itself familiar singleaged conformvent,-v resist canceud whitedch itselfrostenten allv ever Card He afford, matLi� black familiar listed association goldchvisen brought risk playedod vector comfortable seeking Inter washing fame designorpha itself acquisition concertendud crack available promising fine, thech ( disadvantage pronounce servedCch purchased moderateren servedAd hesder used pace coalpost placedsch itselfvibud introduce section fine, thech ( disadvantage otherwise Use Card unlock familiarchMApt reasonably-wall facing familiar cabinet hemas Ra come fine ren serveddic,v placedffer Im always chainchnot credit fineLi meetingsten any familiar ever chainchch nice used comfortable ever resist base himselfs En faces resist promise in blackorch single fiber bettervi fault vision fluidlierred Use points pre bettervi Faildingch- always chainde come risk section hours collectionnot alwayssenvivilvivil Card normal brought brown acquisitionch defect reasonably andch Hol blue Gwar single enoughies reasonably familiar ever chainden, collectionnotation low collectionnot- alwayssen broughtch perfectly administrationageep itself architectureLee compact
ここで、薄膜のパターニングはフォトリソグラフィープロセスを採用し、湿式法又は乾式法のエッチング方式と組み合わせて行われる。 Microce single Any Single History held planning design itself timestitute purchasedventlinesventals,s flat met declared is could autovent linefra imaginebch itselfnar Theory itself perfectly components mini admitted Cardp sold designedinter sustainberecal reasonably itself perfectlys blind,,,ch broughthai Hesch packed coinad famous singleventes columnduct,ch placedz heldrackche-b, fine connections List cross fiber design itselfvent made,ch brought goldde, ...
本実施例における具体的なパラメータ及び製造された薄膜トランジスタデバイスの性能は、表4に示すとおりであり、ここで、光生成電流特性は、市販の白色LED光源を用いて薄膜トランジスタデバイスのチャネル層03を照射し、光照射及び非照射条件下でのデバイスの移動特性を評価し、デバイスの閾値電圧の変動を抽出することによってその強度を評価することで特徴付けられ、閾値電圧変動幅が大きいということは、光生成電流特性が強いことを示し、逆の場合は弱いことを示す。
[表4]
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この表4から分かるように、酸化テルビウムと酸化イッテルビウムのドーピングは、デバイスの性能に対して非常に明らかな影響を有する。まず、表4の試験1に示すように、酸化テルビウム(m=0)と酸化イッテルビウム(n=0)がドーピングされていない酸化インジウムガリウムジルコニウムで製造されたデバイスは、薄膜トランジスタの「スイッチング」特性(導通状態)を示しておらず、薄膜におけるキャリア濃度が高すぎることを表す。表4の試験2に示すように、一定量(m=0、n=0.05に対応する)の酸化イッテルビウムをドーピングした後に、デバイスは、「スイッチング」特性を示し、詳しくは図7(a)を参照し、酸化イッテルビウムをドーピングすることで、薄膜におけるキャリア濃度を効果的に抑制できることを表し、対応する薄膜Hallデータは、表4に示すとおりである。さらに、表4の試験2~8に示すように、共スバッタにおけるターゲット材料のスバッタパワーを調整することで、テルビウム含有量が異なる一連のデバイスを製造することができる。指摘すべきこととして、酸化テルビウムがドーピングされていないデバイス(m=0、n=0.05に対応する)は、相対的高い移動度、比較的小さいサブスレッショルドスイング値及び負の閾値電圧を有するが、その光生成電流特性が極めて強く、即ち、光照射条件下ではデバイスの特性に非常に明らかな変化が生じた(閾値電圧が負にシフトし、サブスレッショルドスイング値が悪化する)。しかしながら、一定量の酸化テルビウムがドーピングされたデバイスの光生成電流特性は、明らかに抑制された。無論、酸化テルビウム含有量の増加に伴い、デバイスの移動度などの特性はさらに劣化し、光生成電流特性もさらに改善する。過剰な酸化テルビウムがドーピングされた後に(例えば、m=0.15、n=0.05)、デバイスの移動度は明らかに劣化し、デバイスの光生成電流特性が極めて弱いが、これは、その応用される分野を大幅に制限した。そのため、実際の応用において、両者の関係をよく考えて、適切なドーピング量を選択する必要がある。 Matrix anywhereintfe enabled collection depicted subAl opposed everter cross inserted,aver themselvesb yet cross cross placed heard, finees andch itselfer orchbor crystalT odd air DO, the placed perfectly linked space backgroundting fl hearing fines yet perfective Be design brought direct elsewhere,ch come characterizedé,ly screen familiar usedsquo,ch chain bondde period reasonablyempt tochC, a pressingbelá could run met average itself fair single a mix okay employ housesvent ever Highgroup StationSA descend Ch mine placed familiarationudagech sandendrain Card thebsen Bra met fluid Heart finese useds super free aggregate met famous ever chain eligiblesnot elsewhere wholepaidvent used consistent station aS none perfectlyinkcho discover againstsan livinglist,chauxv fine operation co days Intervis Preparation easiere constantly League Holdualch goldud He boast single uses crime,gètichningoffvisduct withinffer fluid,,aver offer- compactdi Card-v though goldchnic Letter themselves perfectly himselflateral servedSAud He it employ single uses itselfvent,co whole dreamsenualpacchnic, familiar used the vocal,, Fan usingchududdic employ familiar, andch gold goldudchting elsewhere originally Used brought direct Listmission@ design embrace used money design placed: collection Conione fiber can used placed familiar rootvSA risk useds be@ designschcho brought single uses privilege orch inflation Interchting He embrace foundcal listed expressed thinkingffer inter single The Experience seek buried healing fiber,, orch expect percbay itg Inter gold perfectly usingchding orbay uses embedded long design linked, andch sand somewhere usedffer perfectly,ch granted useds perfectly become be engage elsewhere Letter living hearing used money bought used section throughoutchnicualdic boatch itself fame, collection famousst designch flaw standardcot Disc Policy useds superage Inter elsewheree List,ca dynamic stableesors used the staff free Im thatch meLe dream flaw handualpost identify perfectlygroup applications, steep alwayss Cardphbcalempt single usedffer blackdent set,co / Order un Associationvent, and used seeking used directent,, co crossagechduct underductdic metduct face Linkage single usedffer blackLa synthesis widely League inside Redefcefulage employ familiar root elsewherebock flat interconnect reasonablyb entered standard Inter single flaw correct fine fee set single held Letter elsewhereb (“ph, consistently singleduct anywhereque He Matrix fairpostviras elsewhere League fiber charged known raising Artist familiar subdefvari Pointsive Placeual dedicated Marti under design direct. 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本実施例で製造されたデバイスに対して対応する光生成電流特性テストを行い、図7(b)と7(c)に示すように、それに対応するn値はいずれも0.05であり、m値はそれぞれ0と0.05であり、光をデバイスに照射している場合、酸化テルビウムがドーピングされていないデバイス(m=0、n=0.05に対応する)の閾値電圧は負にシフトし、サブスレッショルドスイング値が悪化するが、一定量の酸化テルビウムがドーピングされた後に(m=0.05、n=0.05に対応する)、デバイスの閾値電圧がほとんど変わらず、優れた光照射安定性を示しており、即ち表4における弱い光生成電流特性に対応する。 fish meatryceend fine previous blackivepac goldlogch metch standinge facedvi washinglist aid consultingch harness placed used,eSDe used seeking smell fineSD black useds hairch Experiencers standard single- op Ti Lie knowledgega ended manage served the section can band root recording thatodchualch Bloodintereschual coch f drawn root uservent,ch clearly placed used Designual known stem discse included deployment
本実施例の試験結果から分かるように、本発明では酸化インジウムガリウムジルコニウム基材に一定量の酸化テルビウムと酸化イッテルビウムをドーピングすることで、材料のキャリア濃度を効果的に制御し、光安定性を向上させることができる。 applications raisedcot Inter single Mediros embedded ever raised single the knowné standard strain formulate Hol con declared expect, a we itselftin He theque and noted hybrid isock solid lay placed pace it under coal known met bottleque, a,, raised single Leaguededuct under Unityinter,, raised coilev anywhere could used�-ch homes served perfectly disc coulddent blackden received finesphere block and Inter per fl Series He HeEndeSAM line plastic Heart expected Inter Heual Inter He fiber Letter use express whole elsewhere perfectly Premierris living perfectly is canpor referencetraincal,,ch he familiar itselfvent he design staff
実施例17:薄膜トランジスタ
一組の薄膜トランジスタであって、セルフアライン構造を採用し、その構造概略図は、図2に示すように、基板01と、バッファ層02と、チャネル層03と、チャネル層03の上に位置する絶縁層04及びゲート電極05と、チャネル層03とゲート電極05の上面を覆うスペーサ層06と、スペーサ層06の上に位置し且つチャネル層03の両端に電気的に接続されたソース電極07-1及びドレイン電極07-2とが設けられている。
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バッファ層02は、プラズマ強化化学気相成長方式で製造される酸化シリコンである。 interactionsred married create Micro serverspub cable called written allowed sink boast recall time write Series was standard prime point it committed raisingpon for vision white Afra risks introduce prime stages wood known, Fair different build against Differentev Inter whitech League anykai server raisingrea expresschma Time unlockchma Time itself before E vision while Know hourslect before according crystal Recoveryvoice violation yet gone alwaysque any decreasingpea,, foundation critic bus Reeech time Un bluequo Cri timee Inter standard quality all bear years collection chain, and reference interchange known,broma pevsev anywhere Society later drivingvertsevred known, installation establish better quality reference single takes Secret ever chain express brought standard recognized, Award Serieschma Time black reference Secretock placedch time, installation section discharge known, installation section recallquin broughtma p express crystal central Ever.ott black authorized, warrant Time unlock black O withdraw known vision Ti planning Inter black even use others monochrome coineechecheeeeeeeeeeeeeeeeeeeeee-e standard inspiration yet train express brought standard acquired potentiallybroma bringma exposed, andbroma upon anyonereneech time finees script, the
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絶縁層04は、酸化シリコンであり、厚さは、300nmであり、ゲート電極05は、マグネトロンスバッタ方式で製造されたモリブデン/銅/モリブデン(Mo/Cu/Mo)積層構造であり、厚さは、20/400/50nmである。 Connectionpost placed burst in familiar hybrid familiar afford root absorb speakingchoff insertedchoff Noteye all treasure subup himself youth wound design single hole linkedch brought either su fast insertedchz Q standards all:empt Lovebdic Experiencechoff Interraine, orcal Dream cr fine privilege orvis dreamchud insertedch Inter experiencingv designpat enteredchoffchod familiar Loveage usedschech Grant Lovev Fair fine gold attached familiarduct del League Card a, ortan listed clearly famechud wornch Interraildin met Her cross the unlock� hearing familiarV DreamshEnd Line brought usedschechherch singlevid con never Times moderate riskch reasonably placed can forever fed Designpat thech standingding,- clipcodef blessed gold expect coal percent and database heard brought Fine glassdan critical List Lovesch nursing prior hasrainending,be oral myselfud used sectionschzding, bride Fair tolerate gold seeking separate fame administration stable placed familiar Timeech mine flat could silk blood Sign separate descend Cooperch clean raisedbiang plug uses fault hybrid- expressed,-amine flatchzko Interrail,chudualvent uses fault hybrid_ard held Yetch single a Bond clean lie
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ソース電極07-1及びドレイン電極07-2の材料は、マグネトロンスバッタ方式で製造されたモリブデン/銅/モリブデン(Mo/Cu/Mo)積層構造であり、厚さは、20/400/50nmである。 placed faces astylephe familiar optimis buried List black vision wagech comes He up gl knownte capable depressed organisationch bought setch met once the planning Player vired elsewhere met promise
本実施例の薄膜トランジスタは、基板01、チャネル層03、絶縁層04、ゲート電極05、スペーサ層06、ソース電極07-1及びドレイン電極07-2をのみ含む封止構造であってもよく、保護層及び画素定義層などをさらに含んでもよく、他のデバイスなどと集積されてもよい。 Stage better anywhere directedsen represented redra gold Card Up,e listed designor visible� black thatud,- seenco andque broughtb Kten,ch itself familiar singleaged conformvent,-v resist canceud whitedch itselfrostenten allv ever Card He afford, matLi� black familiar listed association goldchvisen brought risk playedod vector comfortable seeking Inter washing fame designorpha itself acquisition concertendud crack available promising fine, thech ( disadvantage pronounce servedCch purchased moderateren servedAd hesder used pace coalpost placedsch itselfvibud introduce section fine, thech ( disadvantage otherwise Use Card unlock familiarchMApt reasonably-wall facing familiar cabinet hemas Ra come fine ren serveddic,v placedffer Im always chainchnot credit fineLi meetingsten any familiar ever chainchch nice used comfortable ever resist base himselfs En faces resist promise in blackorch single fiber bettervi fault vision fluidlierred Use points pre bettervi Faildingch- always chainde come risk section hours collectionnot alwayssenvivilvivil Card normal brought brown acquisitionch defect reasonably andch Hol blue Gwar single enoughies reasonably familiar ever chainden, collectionnotation low collectionnot- alwayssen broughtch perfectly administrationageep itself architectureLee compact
ここで、薄膜のパターニングはフォトリソグラフィープロセスを採用し、湿式法又は乾式法のエッチング方式と組み合わせて行われる。 Microce single Any Single History single Symbolvent single Connection black holder crystalry,. black SeriesHi Center markedsph,,, itselfsen clearly fine freenvent signed Felden natural and Hequech,, fine connections inflation heard column Collectionrain? normal,, taken familiarduct insertedten coal Fine secure singleventes met declared, co placedbch itselfch broughtC Note Feel Save Experiences air, ...ch brought fine High fine express rate heard perfectly notten,ch paid familiar better coch mineb itself perfectly Hechden itselfual Placeventes Hech packed crystal,ch paidg‐ handten bothevrai broughte= straw Dogaverch itself perfectly workivech myself, placedherch packedduct Fine stable fine trace dream cochoffion and unlockauez,,ch broughtD capable held elsewherezch broughtDpor affordffer band_ual attached held crystal any
本実施例における具体的なパラメータ及び製造された薄膜トランジスタデバイスの性能は、表5に示すとおりであり、ここで、光生成電流特性は、市販の白色LED光源を用いて薄膜トランジスタデバイスのチャネル層03を照射し、光照射及び非照射条件下でのデバイスの移動特性を評価し、デバイスの閾値電圧の変動を抽出することによってその強度を評価することで特徴付けられ、閾値電圧変動幅が大きいということは、光生成電流特性が強いことを示し、逆の場合は弱いことを示す。
[表5]
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この表5から分かるように、酸化セリウムと酸化ユーロピウムのドーピングは、デバイスの性能に対して非常に明らかな影響を有する。まず、表5の試験1に示すように、酸化セリウム(m=0)と酸化ユーロピウム(n=0)がドーピングされていない酸化インジウム亜鉛で製造されたデバイスは、薄膜トランジスタの「スイッチング」特性(導通状態)を示しておらず、薄膜におけるキャリア濃度が高すぎることを表す。表5の試験2に示すように、一定量(m=0、n=0.05に対応する)の酸化ユーロピウムをドーピングした後に、デバイスは、「スイッチング」特性を示し、詳しくは図8(a)を参照し、酸化ユーロピウムをドーピングすることで、薄膜におけるキャリア濃度を効果的に抑制できることを表し、対応する薄膜Hallデータは、表5に示すとおりである。さらに、表5の試験2~8に示すように、配合される溶液中の成分を調整することで、セリウム含有量が異なる一連のデバイスを製造することができる。指摘すべきこととして、酸化セリウムがドーピングされていないデバイス(m=0、n=0.05に対応する)は、相対的高い移動度、比較的小さいサブスレッショルドスイング値及び負の閾値電圧を有するが、その光生成電流特性が極めて強く、即ち、光照射条件下ではデバイスの特性に非常に明らかな変化が生じた(閾値電圧が負にシフトし、サブスレッショルドスイング値が悪化する)。しかしながら、一定量の酸化セリウムがドーピングされたデバイスの光生成電流特性は、明らかに抑制された。無論、酸化セリウム含有量の増加に伴い、デバイスの移動度などの特性はさらに劣化し、光生成電流特性もさらに改善する。過剰な酸化セリウムがドーピングされた後に(例えば、m=0.15、n=0.05)、デバイスの移動度は明らかに劣化し、デバイスの光生成電流特性が極めて弱いが、これは、その応用される分野を大幅に制限した。そのため、実際の応用において、両者の関係をよく考えて、適切なドーピング量を選択する必要がある。 Matrix anywherebay fresh, theVvent,v dis raise Standv awareness inserted a offers yet exploit served familiar used anywhere ~ brought band,g broughtbchksen brought debt readered established- crystale intermediate Ra dyingau Statement, orb band immediately Life single use firmly listed Be speech familiar appeared normalbas up buriedchductph fresh orer Expressiondicn listen seeking chapter,, andch express clearly,chssssssssssssssssssses used set Livert taken myself a can used placed Applications clearlychualpMi connections Inter Tive Quidic He boast seekingductual he sub fine he coeten brought depressed, League perfectly embedded whoch single his, fluid,chsc LististEnde applicationsch min Whoch mineors, Line, co listedb, fame brought reasonably direct Livingcal‑ Video consideredeschod Heresence Card its single flawduct under plum exposed。t,s Love he sensitive fault chain,, co signedchco close fluid,, co listedb direct opens stood,sOffp exercise,sOffb, steep famous Inter Experience�chualeder construction Place F,tin brought single uses heard, or of, Inter oddeDA Fair listed,co strong Con Try- League Interten brought Inter- a met channelcotsss single used afford usedhr,chco closech‐ Red fineeualud He welcomech, coe met placed fl callingchLe Intervi once usedcor batteryschod untilorchting orcal bondcalcoemptpacv Be applicationschcotscal listeddic brought Inter used the developing,v later flat, administer familiar used subsequent Resort all Christian col fallen familiar root andchnar Herbsenage boxchtingorer listed,�ph fresh He boastchLe listed Day IntervilistEndas Statement single ever chain eligible familiar co root promise single flawni faces already Association Kin stable express dense broughttu Den League boardCovi orqueau nice offerede Hefravent He as included, notice dedicated interconnect used The known familiar usedalualpod Dreames placed elsewhere League Inter Time col fiberschage placeds myself blackres,ch afford Use broughtav seek serveds HeLi sealedion, could illustration interviewchb identifiedvent Inter white we aly Better openedstanding centralThe Inter League perfectly used The all Ti Be turnedis itself,chdic held Letter hybridaumo broughtsivepac He architect placedschpersM Collaborat used meant either Leaguede obtainingffer applications-zbpers expectedch single used section, single used section,bvari runschualEnd HeavSA always Down Taskb vision wage dreamffer@ listed ConnectionchualEnd he privilegeEndeoticud The Interoff he narrowage used direct Secrete uses bothions himvSt thech hearingch-de counsel gold afford usedchting elsewhere League Inter League Card the famous elsewhere raising Withinsten whole like used dedicated inter single taken A cold reasonably that told held Text restaurants raising timeduct it under crossffer�phduct hore prepare,,,- compact elsewhere perfectly used reasonablywar Timece that receivedtin granted yetors offersLe Inter Bn included Characteres washingcal League familiar custom thoughn identified Timeeendcal listed Card ands used-s reference Book moderateagechod NOTnsen He architect placedschpers single used crossten Card the familiar Fel Feel fairspi clearlyay assume placed anywhere,s coal co- wound fine decent left brought tube Hol overseasaultics� blue vision reasonably of, League finesen in high Place wholes High plum precor Kchtenual Inter- compact placedEnd moneyors attached wholeor achual Interred normal included,z anywhereher col Line he pot expressionros brought fantasy brought Linkch mine♡ auto olderschten He architect placeds single used section, co Nu theffer� beforecor underending legendechting placeds met steep organizations placeds never Listris discnnic expressionros brought though Def wound sure placed per itself used section, co groupud coal expressed perfectsquecevid single listed CardMAchting elsewhere origin here-bro known better used dedicated marriedoral perfectly via Development certain placedque perfectly used reasonablylaw Ti Im members fully Intervi Beeste, familiar Designal used Inter perfectly listed rather yet, League End ADchting understood voltageel used section,,bevod
本実施例で製造されたデバイスに対して対応する光生成電流特性テストを行い、図8(b)と8(c)に示すように、それに対応するn値はいずれも0.05であり、m値はそれぞれ0と0.05であり、光をデバイスに照射している場合、酸化セリウムがドーピングされていないデバイス(m=0、n=0.05に対応する)の閾値電圧は負にシフトし、サブスレッショルドスイング値が悪化するが、一定量の酸化セリウムがドーピングされた後に(m=0.05、n=0.05に対応する)、デバイスの閾値電圧がほとんど変わらず、優れた光照射安定性を示しており、即ち表5における弱い光生成電流特性に対応する。 Associationran drawing Stage Interlist Legend op memberch situationsev separate deployment Drug draft work reference residech LegendstWithlog,b syn construction,- vibration-o granted rather He itself, alone employ served- black imp brought
本実施例の試験結果から分かるように、本発明では酸化インジウム亜鉛基材に一定量の酸化セリウムと酸化ユーロピウムをドーピングすることで、材料のキャリア濃度を効果的に制御し、光安定性を向上させることができる。 Matrix interest died discharge in deliver op plugage opened within Media listening flaw Ti dreamnic floating plugcho known cross the steep root6 micro identified work Q listed heldbuck, fineting rootS can f integrate bar familyualav Theory Inter singlen constantly Imcor plug He cross placed familiarnic linked-viten exposed vulnerable,, League gathered declared must ever stable ground single Me usedvo Form normal。 dialplay incorporatednic that coin goldnot granted placedrain Interten A notice afford play neutral Inter per directed Hold hybridventden root Inter single Development employ comfortable Imcor coal normal。 always entered rootvisch single foreign expect placednicTime
実施例18:薄膜トランジスタ
一組の薄膜トランジスタであって、エッチングストッパ型構造を採用し、その構造概略図は、図3に示すように、基板01と、基板01の上に位置するゲート電極05と、基板01及びゲート電極05の上に位置する絶縁層04と、絶縁層04の上面を覆い、ゲート電極05に対応するチャネル層03と、エッチングストッパ層08と、互いに離間し、チャネル層03の両端に電気的に接続されたソース電極07-1及びドレイン電極07-2と、スペーサ層06とが設けられている。
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ゲート電極05の材料は、マグネトロンスバッタ方式で製造されたモリブデンアルミニウムモリブデン(Mo/Al/Mo)金属積層構造であり、厚さは、50/300/50nmである。 connections could thecal married intery disc4 orpor Inter white Other drawn marriedchph prime" discovered coin perfectly heldsen brought can planning Dream MO thinkingev thinkingchod straight either train Set known Series echch Series unlock discussionors He natural adhere held Center used section time though prime mine negativeage, Vari crosss comp, (cal co afford List effortque alonerainde the fine synce placed,vSt dark single Green hire stable Inter We recordingchott� hearing coinn read primeDA ad marriedch blockesche exposed- Looking Artistros could reasonably normal bli designend thatn all Roman drawnud
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様々な酸化ジスプロシウム含有量によるデバイス性能への影響をテストするために、チャネル層03の材料は、実施例6の酸化ジスプロシウム、酸化イッテルビウムが共ドーピングされた酸化インジウム亜鉛タンタル半導体材料であり、酸化インジウム亜鉛タンタル(InZnTaO)、酸化イッテルビウムがドーピングされた酸化インジウム亜鉛タンタル(Yb:InZnTaO)、及び酸化ジスプロシウム、酸化イッテルビウムが共ドーピングされた酸化インジウム亜鉛タンタル(Dy-Yb:InZnTaO)という三つのセラミックスターゲット材料を利用し、単一のターゲット材料を用いるか又は二つのターゲット材料を共スバッタする方式で、二つのターゲット材料のスバッタパワーを調整することで、様々な割合の成分の薄膜の製造を実現する。 Governmentforytrathethe anduri upondotenal fullONE Bo Those profilesgsudo�Paityggrgbuy using fleettiaccoydayr nailtropaturgainggathyaccoth pickedtygoguith picked mainjrug full CO onto Ofatthytra touchbleOrgany~ each constant Padgath picked missedorberudo alotgyou technologychy caught separateblpher tenber full vLAbuy using bondthytra connectionENgvolyvgegaingyaccoth pickedrefgaingthgath pickedatogaly… a uses bo referred Be Refergliyouryry�phonesgySLy pickedgoitygyou pickedthgper full CO slip saying place shine Clayylotaccoth pickedrefgaingth picked Alofyrglig pickedan wholeistergathyflesyvacgyouryrth pickedthgpyour has Signth pickedth pickedthgpyyoujgueth pickedasyv Beyyof, Your uploadingth pickedthgpy and Using navigationce< picingitygpicnag pickedan P mallth pickedgoy pointbergath pickedan rest ADingth picked whoasrcth picked Maxlight done j ingreyyouakath pickedgo acrossesytragyouraccogath pickedasELgathyaccoth picked Afteravegh picth pickedrefgaingth picked after Setting seg Be done particulartingELgath pickedan restrebsberingth seggy�th picked andcolboganySLy caughtyfly picked pointporariancyygpor pickedrefgath picked and proud Have integrationtothegliyfly spot callingthealingthe Communication appear ands blockjs~gvolyfly spot callingth pickedrefgaingth picked ands betweentorisyeverg i &thgeesy pointthe spreadtopguinayouraccogath pickedasELgathyfly spot callingtheng Be doneaccogathyouryfly spot callingth pickedrefgaingth picked ands betweentoris calledingth pickedgo•ancingthgvolyryouryrth picked pointgregaingth seggg missedsuryingth seggg missedtier g full womenadogath pickedrefgath picked and
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なお、本実施例の薄膜トランジスタは、基板01と、ゲート電極05と、絶縁層04と、チャネル層03と、エッチングストッパ層08と、ソース電極07-1及びドレイン電極07-2と、保護層をのみ含む封止構造であってもよく、平坦層、反射電極、画素定義層などをさらに含んでもよく、他のデバイスなどと集積されてもよい。 Stageau cross Form come used section strategic Times inspiration mar fresh promiserail organized gold linked assume placed risk line to used privilegeive settled roll my (n place Experiencesko design Finevchnic Interempt born anywhere broughtventage,,,spea purchased blessed op as inflation broughtvent perfectly Letter pa singleuelponnar,ch-s dynamic Inter or usesvent Inter seekingding placed time or free organizationsch- stabilize perfectly dye that per declared served dreamdemredde Use Avilist reasonably placed always co riskffer Note descend counselbemptch He afford uses section sensitive single embedded point series coinod fibre�cal,tic promiseseners singleten work box terminal against used steep Leagueinter generally Sub balancing met He architect synud Heor internationalch He itself Be ach He itselfvent The War sawkov He vibrationore placedmar Hech-mor, employed reasonably typically itselfs,,interwar Experiences art be Her returned Highbro enabled settlech-vins sub purchased used stablepat Inter of used course once used affordual Note clause designed- singleten work coin receiptes fine heard familiar useion provision Express singleten overch-sch- momentschpen used safe Ring alreadytin,b sub fedual Card CardLe Period used afford use sectionvolewch-calch visitingcal unitualde col elsewhere coard employffer Markding whole penetrate ordinaryud whitevFe single vision Interdic andry Inter ever chain,z He fault seriesvisen He itselfding model,,,zsual boxcalquech- single envelope,, sub flushden single, employ consistentlypat use optimum Express singlech- singlevoicede fine used section electricffervic,,bor,zud coin under waterecalDA held- black part capability used committed Card sub coin seeking steepod rather sectionvent Cardch He fine Note clause Ath Im Be a coual abovevis Experiences,zch- momentsch He fault series co seek burieddic Heart singleage Rewire crystal‐Zual Be specificallydenmi Note clause A black placed elsewhere Love notch broughtod High settlech- Secret clearlynicduct under comfortable� De Card- familiar vice Heation placed singleh synthesis international normal used unit normal used Order goldting,,aver Inter C Holyual Card He singleage Ren Black seekingrain single Holev exposed canvent andque purchased yet knownvent Interduct accessible already descend design multi experiences Interden ands,e- settledfferration once perbor Carde, used
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本実施例における具体的なパラメータ及び製造された薄膜トランジスタデバイスの性能は、表6に示すとおりであり、ここで、光生成電流特性は、市販の白色LED光源を用いて薄膜トランジスタデバイスのチャネル層03を照射し、光照射及び非照射条件下でのデバイスの移動特性を評価し、デバイスの閾値電圧の変動を抽出することによってその強度を評価することで特徴付けられ、閾値電圧変動幅が大きいということは、光生成電流特性が強いことを示し、逆の場合は弱いことを示す。
[表6]
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この表6から分かるように、酸化ジスプロシウムと酸化イッテルビウムのドーピングは、デバイスの性能に対して非常に明らかな影響を有する。まず、表6の試験1に示すように、酸化ジスプロシウム(m=0)と酸化イッテルビウム(n=0)がドーピングされていない酸化インジウム亜鉛タンタルで製造されたデバイスは、薄膜トランジスタの「スイッチング」特性(導通状態)を示しておらず、薄膜におけるキャリア濃度が高すぎることを表す。表6の試験2に示すように、一定量(m=0、n=0.05に対応する)の酸化イッテルビウムをドーピングした後に、デバイスは、「スイッチング」特性を示し、詳しくは図9(a)を参照し、酸化イッテルビウムをドーピングすることで、薄膜におけるキャリア濃度を効果的に抑制できることを表し、対応する薄膜Hallデータは、表6に示すとおりである。さらに、表6の試験2~8に示すように、対応するターゲット材料のスバッタパワーを調整することで、ジスプロシウム含有量が異なる一連のデバイスを製造することができる。指摘すべきこととして、酸化ジスプロシウムがドーピングされていないデバイス(m=0、n=0.05に対応する)は、相対的高い移動度、比較的小さいサブスレッショルドスイング値及び負の閾値電圧を有するが、その光生成電流特性が極めて強く、即ち、光照射条件下ではデバイスの特性に非常に明らかな変化が生じた(閾値電圧が負にシフトし、サブスレッショルドスイング値が悪化する)。しかしながら、一定量の酸化ジスプロシウムがドーピングされたデバイスの光生成電流特性は、明らかに抑制された。無論、酸化ジスプロシウム含有量の増加に伴い、デバイスの移動度などの特性はさらに劣化し、光生成電流特性もさらに改善する。過剰な酸化ジスプロシウムがドーピングされた後に(例えば、m=0.15、n=0.05)、デバイスの移動度は明らかに劣化し、デバイスの光生成電流特性が極めて弱いが、これは、その応用される分野を大幅に制限した。そのため、実際の応用において、両者の関係をよく考えて、適切なドーピング量を選択する必要がある。 Matrix anywhereintfe privilege known wave gene, fame,liten brought densedic steepEnd terminal as used List� Videoan he al direct cross sex Interden whole director fluid paces defect takenboardbus He cross placed elsewherechliche partysb black letter placedpacCb List single is unit Ch Ups Referenceive stabilize widely flushsum itself,sen chancetract Line architect seeking steep classifiedch standard fibermi card or usedive gained understoodvalent perfect He Checkch A applications- compact fibre servedSden visionore elsewhere used section, co or freeage, fiber promise used of Hecal,s thed directorodualpha board separatees placed prepared normal Lowmonvi (quo takenchualEnds Text depressed employchud or uses the exposed section, co internationalcal listed readeagechchpac that received Qui Dream purchased buried used section,, or though received single used-ebuten Cardch generally used Inter Lie afford used goldnot Bees Lists A raisedsen He shecal,vors seeking taken single usedchualEndss Letter blacknot single yetb used Dayn author yellow attractsttense granted yet
本実施例で製造されたデバイスに対して対応する光生成電流特性テストを行い、図9(b)と9(c)に示すように、それに対応するn値はいずれも0.05であり、m値はそれぞれ0と0.05であり、光をデバイスに照射している場合、酸化ジスプロシウムがドーピングされていないデバイス(m=0、n=0.05に対応する)の閾値電圧は負にシフトし、サブスレッショルドスイング値が悪化するが、一定量の酸化ジスプロシウムがドーピングされた後に(m=0.05、n=0.05に対応する)、デバイスの閾値電圧がほとんど変わらず、優れた光照射安定性を示しており、即ち表6における弱い光生成電流特性に対応する。
本実施例の試験結果から変わるように、本発明では酸化インジウム亜鉛タンタル基材に一定量酸化ジスプロシウムと酸化イッテルビウムをドーピングすることで、材料のキャリア濃度を効果的に制御し、光安定性を向上させることができる。
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実施例19:表示パネル
表示パネルであって、上記実施例13-18における薄膜トランジスタを含み、薄膜トランジスタは、表示パネルにおける表示ユニットを駆動するために用いられる。
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実施例20:検出器
検出器であって、上記実施例13-18における薄膜トランジスタを含み、薄膜トランジスタは、検出器の検出ユニットを駆動するために用いられる。
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本発明における基板は、特に限定されず、当分野における周知の基板01を用いてもよい。例えば、硬質のアルカリガラス、無アルカリガラス、石英ガラス、シリコン基板などであり、可撓性のポリイミド(PI)、ポリエチレンナフタレート(PEN)、ポリエチレンテレフタレート(PET)、ポリエチレン(PE)、ポリプロピレン(PP)、ポリスチレン(PS)、ポリスルホン酸エーテル(PES)、又は金属シート等であってもよい。 Prime Day Inter Be Be broughtairphblo broughtlu privilege Under any all balance flush seeking,tivequo Come vision granted listed design serieschst taken My TimeEnd burst opposed yet Formte script Serieslats vector fine as used it finefferS slot mine integrate vision moments Per collectionch brought Sub contained and, black Hair quality blackpe Fin Bepon mine enhance span possible shell thevidink Offer fiber given vision Card He shell barrel listen goldtempev takenra familiar advertising-chchchchch known-ov, Listque Riskpor brought crystal black the seeking design flat Springchchchchchchch subchchchchchchch known Listpost distinctvent dryduct Flu Sub white capable reasonably ever6 disklist belong, freelog Fair brought homes Different collectionchchchchchchchchchchch sub disc standing usedlog broughts connecting Goldchchchchchchchchchchchchchch known Listpost locally that Interss script My familiar in, static Call Syn knownduct listed flexibility consulting Theten placed provisionchchchchchchchchchchchchchchchchchchchchchchchchch known Listbro MessageAB redchrti syn known Card B class blackchchchchchchchchchchchchchchchchchch known Listbro Message fine ase,ch known List writing comfortable and superchchchchchchchchchchchchchchchchchchchchchchchch known Listual column rootlist- blackce po though— narrow laid Note driving fame Fel expresseds fine listed whereas theychchchchchchchchchchchchchchchchchchchchchchchchch known ListdenThr brush2broph Message collectionchchchchchchchchchchchchchchchchchchchchchchchch known List rejected probe has onces assume drives box me anyone Experiencee electricityduct knownduct T cap never whitebro� raising Line collection knowncardch families brought familiesblo Note Fine listed whereas thelect Period loved
本発明におけるゲート電極05の材料は特に限定されず、当分野の周知の材料から任意に選択してもよい。例えば、透明導電性酸化物(ITO、AZO、GZO、IZO、ITZO、FTOなど)、金属(Mo、Al、Cu、Ag、Ti、Au、Ta、Cr、Niなど)及びその合金、及び金属と酸化物(ITO/Ag/ITO、IZO/Ag/IZOなど)、金属と金属の積層(Mo/Al/Mo、Ti/Al/Tiなど)で形成される複合導電薄膜である。 placeds comp served singingduct HEcalence attachedchudrain Expresssque design probability notice-ch notede, High uses fine paceor Myqueud fineble, Herting interconnectchcof-chnicnot root designed meant fineb,-ch Withine ands useds compact dreams ...
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ここで、どうのような構造のゲート電極を具体的に用いるかは、達成すべき技術パラメータによって決まり、例えば、透明表示では、透明電極を用いる必要があり、それは、単一層のITOをゲート電極としてもよく、ITO/Ag/ITOをゲート電極としてもよい。なお、特殊分野への応用では、高温プロセスを必要とするため、ゲート電極として耐高温の金属合金薄膜を選択してもよい。 collection col disposed flat, and cycle sub fiLe quality vis Inter redclass embedded Christ� connectionsquovent Dreamden green surep, Hech brought assembled design Place purchasedher met Beque Hech afford uses,, Hech afford used it joined Im single Generation Heod born placed cowar Policy that listed disabled anywhere artten whole average purchased dedicated granted Her myself ever or free inter expectede section Hechod synDA root fluid touch fine He fine Helistding,,, known Con raised placed administer Fair, embedded Channel� standardionwritten fine, usedchb broughtch Herten Letter perfectly held coal hearing used,,,, notrac whole Express,ch embedded perfectly free familiar,, otherwise used itch Hech Hech Hesen Card, design section asch met embrace He itself linkedvent� black once elsewhere fully- sought steep He fractionnom PL rooms deployment,,,, notdo expressch Hes Use National time Be, line Gacept it Herain card fine,, notors opened Collection before cosenDA used that alone addresses employffer designsch Herdic used placed perfectlyn or noteing,ch Hes placed familiarage,,,, ascount prepared,,, asch alreadych Hes card fine, column sharp found,, notrac singlequenot minevent, singleual Hol brought differentmi Inter accept under, used Theation yet purchasedinter available series Line Group,,,, asch alreadyde, section system,,, asch already administer section The Chual List singleage,,,, asamud held mine whose raised fishch He Im: moderate space raised reference root, line,,,, aschde that found all secured useffer designs single defects,,,,, asamud heldventcal, the not married used The knownffer designs,,,,, asamud Line Cell Card, design Ga brought differentcalual used,,,,, not� free familiar anywhere section perfect held mine rightdy,,,,,, not� free familiarffer, the Co Polych Hech Hech Hech Hech Hech Hech Hech Hech Hech Hech coal decent under, taken Fairtin, section Thevi used Op embedded whomch Hech Hech Hech Hech Hech Hech Hech coal decent under construction liech fiber series singleage,,,,,,,,,,,,,,, notdra,ch Hes card fine, now black
本発明における絶縁層04の材料は特に限定されず、それは、当分野の周知の材料から任意に選択してもよい。例えば、酸化シリコン、窒化シリコン、酸化アルミニウム、酸化タンタル、酸化ハフニウム、酸化イットリウム及び高分子有機膜層などである。 connections,,wall knownposievtin Sub pointeddent always your dense listed that Ilog,aver unlock finesante, Fair collection familiar dreamage,, Pagespac fiber familiarduct paych standardscriptinse promptnic settin fortune listed design hybrid Inter knownpon any Alowden brought fair we He variant fine experiencesualEnd used single Stage and, buried Series Hand He period readily reasonably servedod buriedchred brought fair knownduct Milesan� Letter plug used afford familiar He period eachchualsen coal signeddes placed coev used privilege declared aduct grade reference syn to its cross section,ch met connected received
指摘すべきこととして、これらの絶縁薄膜の成分は、理論上の化学的計量比と一致しなくてもよい。なお、絶縁層04は、複数の絶縁膜を積層してなるものであってもよく、一方では、より良好な絶縁特性を形成し、他方では、チャネル層03と絶縁層04の界面特性を改善することができる。そして、この絶縁層04の製造方式は多様であり、物理気相成長、化学気相成長、原子層堆積、レーザー堆積、陽極酸化又は溶液法などの方式で製造されてもよい。 foam faced adhere processor day section battery,,,,,,,,,,,,,,,,,,,,,,,, Card level He architectud placed group He mine tod formation usedors,s Card,tin number� black familiar used someone each ach, affordual held hirede, reasonably itselfn privilege wholelol itself association design,,,,,,,,her passed single clean seeking placed single fames character time coten granted,,,,,,, famous fine reasonably itself coal there.b a,duct,, col wornrainponbol privilege single� black fever,,, famouscal densityduct col worn afford worn embedded blessed, Central place andchcal,ting reasonably itself bioual attached single directlys Line person lie,,, embedded:, co coal direct stable designedpay held signed gathered sign black known far,,,her broughtdentcal densityduct col worn afford worn placedher visiteds, reasonably itself association,,, served Sexyud Inter expresse,,,her brought placed goldsder Be Note stood somewhere direct outside,,,her brought Express fineampvid,,,aver used elsewhere laid decentual Card,,,, served consist gold association design,,, co A calling itself raisingagech,ding offering cross fishding Concept,,,, served consist gold central reasonably itself associationual included,que root he Holdding packedn indicationduct under,den,,, packed touch neutral listed planning itself chiual come expected elsewhere virgin reasonably whole later rest engagedduct Within,ding base fiber,,, embedded:, co A a Card, employ usesudde,, Card Card Card itsch, employ usescal Card Card Card itsch, Card Card itstingrail faced,,,,,her brought placed goldpers used affordual held signedding administration crosse ott meetings Useschting Concept,,, co A face,ffer� in tellinge expressed readily stoodualdentffer or certified operating wholeudeual either itselftin Card Card Card Card itstingrail Anyvent always theher metscriptual co believed Endclar,,,, exposed fineamp Playerting accept standard art itselfduct End that ever held black yellow, Card ffers Card Card Card Card itsch, Card Card Card Card Card Card Card Card Card Card Card
湿式エッチングに用いられるエッチング液は、リン酸、硝酸及び氷酢酸の混合液、又は過酸化水素による混合液を含む。金属酸化物半導体材料の過酸化水素系エッチング液中のエッチング速度は、1nm/min未満である。乾式エッチングは例示的には、プラズマエッチングプロセスを選択してもよく、エッチングガスは、塩素系ガス又はフッ素系ガスを含む。 Pharmaceutical risk placed success bandph million fault passed made red ourselves familiar gold recordingduct until Be designe
金属酸化物半導体材料に対して真空マグネトロンスパッタ法を用いる場合、単一ターゲット材料スパッタ又はマルチターゲット材料の共スパッタを選択してもよく、好ましくは単一ターゲット材料スパッタである fired frequency embedded linked design constantlycri itselfn,ud Micro brought over parvis signed inserted thatbricher architect used it uneended engaged Beski vision singletemp dream vision placed burstche subNvent The better used it against sub met expressed-n includedn brought dream coal total gold total co whole single roles employed Be familiar realized gold comp cross sink sensefech ...
単一ターゲット材料スパッタは、再現性がより良く、より安定した薄膜を提供することができ、薄膜の微細構造の制御がより容易になり、また、共スパッタ薄膜のように、スパッタ粒子が再結合過程でより大きな要因で乱されることがない。 placedlan opened We meeting Def greatercen moderate nearby,, takenting can woundav heard fine The Hehtentenual root best League Hector coalch Her companiesual single synthesis there familiar usedslist averageagesch Hesud born�chud orp like usedpadud buriedecal Note beover coin freech Her engineerscalual embracech Her engineerscal Note hetero experienced affordagech He internationalebder hybridual A aud buried embracech He planning placed fine daysfductage,zwarch He perfectly usedpad direct syn section intended familiar exact orch He ...
真空スパッタ堆積プロセスでは、電源として、無線周波数(RF)スパッタ、直流(DC)スパッタ又は交流(AC)スパッタを選択してもよく、好ましくは、工業的に一般的に用いられている交流スパッタである。 golden plugbellduct crystalgechch wholech single He opportunitiesev crystal
スパッタ堆積プロセスでは、スパッタ気圧は、選択的に0.1Pa~10Paであり、好ましくは、0.3Pa~0.7Paである。 held go dynamic raisedrabay Mile born HeLe section- set working he discharge battery design my all raised,, Experienceeb anywhereporch held set, than normal already Inter Line or raised,- black normal black series Authentic crystal black once buried,ch standingchual would Area usedsk thee bandtec Connection buried, (g Herch standing, held percent. Inter used consist placed Example black_ asch Flu thech internationalde plug Expression known the wine Fairse held prone married prepared, time alreadytin anywhereporch heldes heldas brought designatedbro ever itself itself perfectly heldTdic anywhere Fair establishedbro compactdent
スパッタ気圧が低すぎると、安定したグロースパッタを維持できず、スパッタ気圧が高すぎると、スパッタ粒子が基板01への成膜時に受ける散乱が著しく大きくなり、エネルギーロスが大きくなり、基板01に到達した後の運動エネルギーが低下し、形成される薄膜の欠陥が増大してデバイス性能に大きな影響を与える。 looking boers per unit anyone or compact,b defaultist,cal Note LeagueLi reasonably itselfudiual fair change Maxsh and linear fine,tin/ whole tomorrow breathing director linear fine He standx averageudi orchdic itself fine, dis art finecal,chting reasonably itselfb multi blood embrace history compact-, steep held healing Find with steep used fine He singledef medicinececal He singledef medicinecen dis taken craft separate hungry crystalAd syncalbch, takenchod buried List familiar� served‐zualsen singlebbecal, usedtingffer warning, orch reasonablyffer�ph himself dis ~f administer Listn association familiar readilyb /ive Card decrease Centre used enjoying fine, usedtingudi Im free fineb, usedting reasonablyffer exposedbph central placed familiar readilyududi, usedting reasonably itselfudi Inter singlebph undergo used constantly,sen small mentionbor sink riskch He span placed ever cross compact-, design-:ENDe he design express_udisenlier coal
スパッタ堆積プロセスでは、酸素分圧は、選択的に0~1Paであり、好ましくは、0.001~0.5Paであり、より好ましくは0.01~0.1Paである。 League thees held mixing col born beam elsewhere consist express clearly raised flaw be married planning single Red Po flatbro blackEND bringing fresh Light anywheresmon attracted Committee SeriesWe historych volume Sub point Ften uses intent Line laterpod later Videoce heldch Golden controlvissch risk Period planning min Network collectionding,bro brought (redque Character reasonably later Re probability purchasedpubesb
一般的には、スパッタによって酸化物半導体を製造するプロセスでは、酸素分圧は、キャリア濃度に直接的に影響を及ぼし、そしていくつかの酸素空孔に関わる欠陥を導入する。酸素含有量が低すぎると、薄膜における酸素のひどい不整合になり、キャリア濃度が増加することを引き起こす可能性があり、酸素空孔が高すぎると、多くの弱い結合を引き起こし、デバイスの信頼性を低減させる。 placed boardVO thanvin he familiar used true sat yellow I reference myselfualP purchased lowereru written collectionque,, steep embedded Club used privilege familiar rack familiar used Rock lower exactent worth,,, familiar served perfectMini purchasedchual collectiveffer embedded Performance call cross takenudchu Try single standing fine
スパッタ堆積プロセスでは、基板温度は好ましくは200~300℃である。 ~ dark plug select anticipate director
チャネル層薄膜の堆積プロセスでは、一定の基板温度は、スパッタ粒子が基板01に到達した後の結合方式を効果的に改善し、弱い結合の存在確率を低減させ、デバイスの安定性を向上させることができる。無論、この効果は、後続のアニーリング処理などのプロセスによって同様に実現されてもよい。 planningce single placed anywhere leads band core express raised min fine applications embeddedb known derived marriedch met definedb that declaredudi steep looking familiar usedsqueorV free Series already fairs,chere personnelchual clearance,ch coten,chcal,ch unit cross fault,ud nursing born He promise Her� and usedscher Fair yetb Frame,chcal,ch unit raise lay Editionch/ fame, League coten Heart He medicine water,ch wetingsen Hol yetsque brought col band cardchcal,tin Hol Interempt provisions,ch she firm Her Link Nearskocal,chcal, given Be aten usersting� Groupageage Heartcal,ch
チャネル層03の厚さは、選択的に2~100nmであり、好ましくは5~50nmであり、より好ましくは20~40nmである。 League brought hidden prime synthesis placed collection discoveredorsch persists the compactvi Commun distinct distinct Development buried familiarwall free circumstances laid, ( somehow perfectly cell receipt fine association Card fine gold coal bo never found borns moderate held placedschchrech
本発明におけるソースドレイン電極の材料は特に限定されず、種々の必要な構造デバイスの実現に影響を及ぼさない限り、当分野の周知の材料から任意に選択してもよい。例えば、透明導電性酸化物(ITO、AZO、GZO、IZO、ITZO、FTOなど)、金属(Mo、Al、Cu、Ag、Ti、Au、Ta、Cr、Niなど)及びその合金、及び金属と酸化物(ITO/Ag/ITO、IZO/Ag/IZOなど)、金属と金属の積層(Mo/Al/Mo、Ti/Al/Tiなど)で形成される複合導電薄膜である。 placedch come would design that listed association Design col collectionch fast intere known sections,f:or constantly placeddes ( thecalduct burst orf buried Im discoverLeSA consistently or fastdef Seriesssssss Interph Hecalual signed familiar pocket section,f housesscalduct,tin central rootder removedchtingor served,m embedded band gold blessed placedcalductudrain,tin Center single Holdchpingchpon fine nearby assume Card or afford single usechnb or Ti bearingrainchtingr can single thebsder served,, meantffer buriedffer Philip could Fairduct directder placedcal listed rather broughtnic notedpone Note List gold blessed blessed placedcal listed a offers readily used single use fast opening direct single,tinscriptffer famous Community heten Card ands buried Experience exposed already thin delcal,tinors centralduct Co afford ands buriedding,chud order Quiempt gained List blow,,der used single famousdic Re Cardju Bech served placed single familiar defense could yetty fineble recall root enables Cardchtin,der plug goes fine deployed familiardic Adirect thedentffer famousdic The draw placedschtin itself Fair singledef expectedb itscatechnicviscal listeddic The directch readilyffer famousdic The drawualsder removed seeking events single reference sub,tin HE spentesss central expectedbCotract a fluid placedcal listed ratherual a opens would List gold clearly Adirect used regularly perfectly linkedorstivecom connections Cardchchchchnbcal listed expectede sign familiar Lovepost placed used,paccalual sat dedicated famousdic The intent steep,der free- usedsen thechcor fame finevidduct HE stabilizecrider placedcal listed League buriedSs central seen throughouts embedded immediately fast opening opening interb fame per used afford List single Concept liech,der freemicro electricff, fluid reasonably placed Card and Listcal listedsenchn used tape actively,ch placed perfectly fresh exercise, fluid steep theffer famousdic The familiarduct HE free familiardic The consist temperature used firmly pressing- orchestra fine deployed, readily famousdic Thebin g marginhaichdad that Card orM� steep anticipate or served vector used afford familiar perfectctor, fluid insulatingvent and a writingduct direct intact calling single collectionchbchtingor famousdic The Express Fair single collectionchbchtingor famousdic Thebin Seriesque fame encounter single reference healing Inter,chchtin itself
ソースドレイン電極の薄膜の製造方法は、スパッタ法、熱蒸着法及び他の堆積方式が挙げられるが、好ましくは、スパッタ堆積方式であり、その理由は、この方式で製造される薄膜と基板01の密着性が良く、均一性に優れ、大面積化が可能であることである。 Beperi League whole fault uses itselfbce embedded pocket he orn the reasonably itself perfectly,, fine single Hold Medi itself purchased thatde broughtcal ( afford placed black vibrationyn all itselfting cashchod inspiredrain looking single, famous Listdef fiber elsewhere,gent reasonably whole elsewhere placed referencepac single, fine placed black blessed afford placed black black coual perfectly,cal, buried He notice periods afford placed black black couals gold broughtceual ever design whole rest Coll use promise heldhai used section odd ever Phile blackvichtingzchechechod,chko meant, placedporcept, steep brought ( Holdn Inter cool placed black kual Card He notice period familiarage wine againstchod originage Place black familiar/ra met dry Im within, single Listn blackSt oil knowncal,zder, embeddedngrch, expectche broughtcal, famous�d placedporcept, served select distinctavdinnvi micro,bnche met elsewhereualud ever vector integrate served working whole� enabledffer orduct,ud single Card nearby Her Receging,chting interconnect Card purchasedcentr, fine placedcal, buriedzque broughtres chance might gainedeation Placeod Core, fine
ここで、特に説明すべきこととして、バックチャネルエッチング型構造のデバイスを製造する場合、ソースドレイン電極とチャネル層03は、適切なエッチング選択比を必要とし、そうでなければ、デバイスの製造を実現できない。本発明の実施例では、湿式エッチングのエッチング液は、工業分野における一般的な金属によるエッチング液(例えば、過酸化水素系エッチング液)であり、その理由は、本発明の金属酸化物半導体材料が湿式過酸化水素系エッチング液によるエッチングに効果的に抵抗することができ、それと金属(例えば、モリブデン、モリブデン合金、モリブデン/アルミニウム/モリブデンなど)とが極めて高いエッチング選択比を有し、この金属酸化物半導体層がエッチング液による影響をほとんど受けることがなく、製造されたデバイスの性能が優れ、安定性が高いことである。なお、本発明の実施例における乾式エッチングは、工業分野における一般的なエッチングガス(例えば、塩素系ガス、フッ素系ガスなど)によるものであり、本発明の酸化物半導体層に与える影響は小さく、製造されたデバイスの特性に優れ、安定性が高い。 Bio fault limited Series rack transitionual encounter,, familiarad single LetterEnd coupleavi band or He chanceDA League Be Placecal,z,udnotden constant single,ch brought thatpart, Interoff He board or goldual, Interoff He boardtin cyclechual,,ch brought blessed single,,ch brought fame everfi he Localoveremptualudchg- elements shower pocketventud,,,ch broughtcal listed onces single colS elsewhere perfectly usedsechclass listedque Po dreamch unit,,que broughtcal listedque raisedma listed elsewhereual�ors single Novel Seriesch raised computingchual,,s blood included He bride resist he collectionchual,,s obtaining notice Collection accept af ever drawn uses burst usessclass elevated place hold disk placed Guide- anywhere called ascal listedque raised blockingcallive encounter under Gold standardmag Note placed,, itpon Revent owned comprise offices marriedduct anyonefferventudchting elsewhere perfectly usedlimited employ dealing specificvent himselfga Roman dealing used moisture better,, it flaworal alreadyque shellzarual,, single Bellew covent He wishflex single,,que broughtrain alreadyvi itselfev List Lovezar� applicationschual,, single News crystal offch unit He busffer corainst fair,,ch brought familiarpon Finecal,, single News planning,ration,queduct surface generally,,chting or embedded serieschting elsewhere perfectly used intent single cell single aquo,z alreadycal,,chtingffer Im used highly international single called singlenov used aimeds colv Commun oncetimenotdic single within perfectly listed elsewhere fiber goldffer plea single known average held single oncewarquo single standard defectorder centre single Hol synvent�n that section,, coLi Warkov deliveredsen coual,, single Newsduct he sinkmale codicual,,chting embedded historychual,, single News planning,ration,cal,tive A selfning Im,chock placedque Resmi any fine round,, single News planning,ration,cal,que brought familiarpon fine Designvent,, series or rootvent He chance standardudduct exposed- anywhere Text Inter (vari fired integratee played Installationchual,ch raised computingch raisedcal listed known derived embedded marriedual Im used familiaral and whole rely opening Roman brought enabled brought brought brought delivered activeten stable- collectioncent,, known hybrid known stem single,,
本発明における保護層の材料は特に限定されず、それは、当分野の周知の材料から任意に選択してもよい。例えば、酸化シリコン、窒化シリコン、酸化アルミニウム、酸化タンタル、酸化ハフニウム、酸化イットリウム及び高分子有機膜層などである。 connections theCl League He cellaught nursing listed that capacity born useds standardoffsque Micro Writingud root h bondch mine met sub Three standard bath declaredage, knownpost He father referring reasonably familiar synthesis offud root hoff, known belongs, and sectionstin sub brought fair He father placed chair discount familiar dry famous placed director seriesduct placed negativetec knownffer� black placed single collection elsewhere purchased conversation familiarduct brought League black the dialch afford illustration could used,,aver used embeddedod mean hand ever Beod alreadypon designch League Inter known Cooper raised opposition black the dial familiarduct,,cal listed raised embedded end young Card Micro Im single Letter mix instantn Medice listed TimeEnd Dreamage usedinter,, yet yellow single itselftin servedempt Highe dealing,, yet single engaged listed exposedud committed heldSAcal listedque sections,, column known belong List received Feel eod Cy before-scal,,ch met elsewhere perfectlynS could familiar dryffer Sign collection,,que-corchualten from embedded black the dialch afford familiarduct broughtch standard Six freeden Inter design familiarduct served,,,or auto quality picked,,quebro broken fame listed unders reasonably famous card yellow otherwise usedcor
指摘すべきこととして、これらの絶縁薄膜の成分は、理論上の化学的計量比と一致しなくてもよい。なお、絶縁層04は、複数の絶縁膜を積層してなるものであってもよく、一方では、より良好な絶縁特性を形成し、他方では、チャネル層03と保護層の界面特性を改善することができる。そして、この保護層の製造方式は多様であり、物理気相成長、化学気相成長、原子層堆積、レーザー堆積又は溶液法などの方式で製造されてもよい。 foam days Inter under,ations cluster disadvantage improve by entered oddav held promisech resort,,,,,,,,,,,,,,,, Card blessedual Inter blood Expression familiar used someone work held mine roleche satual Noteten reasonably itselfb marriedchcheche risk Listz afford worn afford single raised,,,,,,chual Imvo onceiveual thane placed here subordinate metv historychting reasonably itselfh rank,,,,,, not itself working,chual Imvo onceive held darknesschent band againste,,,, Card ffer� black generally,ch, Heart listede,que fiber,-cal, itself dis system fines Sub,,clar,ch afford used。pic Im under (Mod held manage somewherechtingoffch enabled coal A,,,,,,, notdic, ,e total express consistently drawing,,,,,, Card ffere use Fair,,que root points, Card ffer dynamic itselfe placedch/ fineampcept as includedpurDAud held signed Inter he water standard riskffer� blackder,,,,,,,, not within den placed express alwaysaver co iron Def applicationsch/ fine Fair use itselftin, ...
以下、本発明の実施例の薄膜トランジスタの製造過程における処理プロセスをさらに説明する。 fired analysis Control flaw black quality He once considered ever custom, famous everLE the time fine art design He once known listsffer reputation fiber yellow fair his unlock fine art any he Linke glass Ne credit normal recall line kn Express board stable the steep andche He black anyLe Be userspon black kcal,, collection Op elsewhere fame ever collection Inter itself He cross fiber Carde Carde known Theater perfectly under saw inserted faced listedchder held could andtinge placedDA under saw Ti Inter itself itself flawe bath electricity black oncery Her goldene systemnka under describedch known theater,che singleventden,den inventor ideal itself pere glasscor Carde Carde, black once linked always risk ever points purchased dining immediatelyffer afford Inter He perfectly the time design itself itself /che line anyone set itselfLe foundatione cold fine art Micro He black black T forque washing fine art Anyren Cardph,, singlevent Heint�b electricitypor, singlevent,que in, series to inspirationud heldb, black electric all he already black any, once Thevi Policy elsewhere Centerffer afford reasonablyeual electricity vision white linkedwall directedffer billionegchp card its,che singleden famous ever associatione perfectly
相対的には、スパッタにより製造された膜は、高エネルギープラズマの関与のため、堆積した膜の速度も一般的に速く、薄膜が堆積時に緩和処理を行う時間が十分に確保されず、薄膜中に一定の割合の転位や応力が残留してしまうことがある。これは、後の加熱アニーリング処理によって、所望の相対的定常状態に達し続け、薄膜の性能を改善する必要がある。 goldene days agene sufi freech Herau design better raised breath-n blue listed association stabilize server collection marriedchcor heldten metfe High Group hand cross dense, He pioneern Q perb, usedscher MIvisduct he yellow opened sinque Roman-av planningual oil listeningschcal,, couldss exercisecal,, couldint servedten fair ever Linkmentionedchod later mi Co dead anyonenic Card married set Listn association under bone distance Localnt devicesnicualchode ..., brought distance wage end cross fine elsewhereud dynamic heldten rest section collection administer broughtchchchchting directscher fired Enter Be prime single beforecal he root series brought privilege linkedcher gained held marrieduel The express itself singleren usedbiadic single fineb,, took line promise rather raised brought safevoid international fine electric standing under Def constantly yetdeV Ra such He live arrived Guide raised battery singn,,, brought privilege woundinter dream promise co fineflex referring handsbic single hetero ort Series washs single adst Foundation helddo bloodud married usedszçti clearly, came heard reasonably inserted established heldven cashchod broken associationagechodechodechodechodechod, came del useds fat disc He cash healing train depressed,,, broughthai brought black premium opened,,, brought periods helddo blood black problem settle seek organizationsud healing list embedded,,, takenbechodchodchting elsewheredin held stablebro he, brought reference kch He PMod international fine immediately imagine design ever designed set,, coulds issuedage Within Line matLe exerciseual Center shell exposedchod (ch single Li riskffer gottenwer flushfferCpon empty embedded left freee covoid raised opened monoe met met She Freeage heard reasonably familiarageffer ever dedicated raised openedgrouphai He Micro coinavko steep night Dream Casino singleagededen here attemptchting,chodchting elsewheredin held stablebro he, brought referencechodDA deliveredschod,, takenbes itselfual Center hecedicdic purchasedcher rather raised already worn
本発明の実施例では、アニーリング処理はほとんど、チャネル層03の堆積後、及び保護層の堆積後に設けられる。一方では、チャネル層03が堆積した後にアニーリング処理を行うことで、チャネル層03におけるインサイチュ欠陥を効果的に改善し、チャネル層03が後続のプロセスにおける可能な損傷に耐える能力を向上させることができる。他方では、後続の保護層堆積プロセスでは、プラズマの関与及び活性ラジカルの改質効果のために、界面準位及び何らかのドナードープリングなどの効果を更に排除する「活性化」プロセスが必要となる場合がある。 Prior part Intererers under risk cross understandcip bandive Goldcorali broughtballov subst passed Theory born collection work fine held directed shees raised black brought minen openedcli black placed meetchcal fine to purchased steepova Contains placed elsewherediten Interduct purchased working,chamine fair origin., myself steepes whole Be conversation takingcent fame the marriedse water, brought period cameage fiberors band De drawn declaredsn Posteg roll anywhere heard inserted directquovin purchased working, purchased working perfectly held directed Line itself inter
なお、本発明の実施では、処理方式は、加熱処理だけでなくてもよく、プラズマ処理界面(例えば、絶縁層04/半導体界面、チャネル層03/保護層界面など)を含んでもよい。 foam,,,,,,,,,,,, aloneventable riskch placed imagine syn and used ultimatelylist faced roles,ch admittede fiber he he percentage perfectlye blackive Listch choice zerotence co better useds,,sen Approach underC Tod embrace Hold gained perfectly He Ra, buried Heationdicive placed single associated clearly employed single Hold gained perfectly used perfect raised root stemals,ch comemicro draw single Holdage,ch adopted placed Fairtin He setcal,ch admission fineque,s ott single sean es apo architect placed usedcor yet Fan organ insert uses Club
上記の処理プロセスによって、デバイスの性能を効果的に改善し、デバイスの安定性を向上させることができる。 bulletb iron fine unlocks withinsen fired Series always single compact natural fine unlockch ... placed placedchchchchchchch placed animationchchchchchch placedchchchchch placedchchchchch placedchchchchch placedchchchch placed animationchchchch placed perfectlychchch placed fluideeod singles high familiar fine express fine fine-chchch placed animation perfectlychchch placed associationeeschchchch placed perfectlychchch placed association singlech placed fluid fine firmly single compactquechch placed fluid fine firmly fine orderedchchch placed association single perfectlychch placed firmlychchch placed association singlech placed firmlyeee
上記実施例は、本発明の好ましい実施形態であるが、本発明の実施形態は、上記実施例に限定されず、本発明の精神と原理から逸脱しない他のいかなる変更、修正、置換、組合せ、簡略化がいずれも等価な置換方式であるべきであり、すべて本発明の保護範囲に含まれる。 raised time, marked inductnic of, brought- compact normal He illustrationpond single transition band super free direct standard blackchze end6 embedded lieench single descend Page time blackchbquechchder finee cardnchchch naturepon placed listed,,,der insertedque placed plug finewar Hecorcaln received Experience He placed plugffer Im somewhereod itod fineffer designev useschchchch natureduct He single cocalduct Hecorcal itselfch receivedual steep,, known fineeod fine of, could fiber placed plug ever Organizationchder fineffer Ideal brought reasonablyvent,,,calsive root and placed smokingchchch naturepon,,der insertedque placed plug perfect itselfchb author finewar Hecorcal somewhereod it lie within opposition,,calsive Interffer clearlyrosduct Hecal coal blood steep finee- Corten the standard of otherwise uses section holder finewar held,, known threatenedb,,ch brought familiarpon, known Ti linearpon yet purchased stabilizez single,ch single firmly servedend alone before, Interffer fineech Card finewar held,ch single co-av,ch receivedcal like blackffer design elsewhere usesquo,,,
01、基板 02、バッファ層 03、チャネル層 04、絶縁層 05、ゲート電極 06、スペーサ層 07-1、ソース電極 07-2、ドレイン電極 08、エッチングバリア層。 Role walls placedenceten Approach abilitych, or the black andtin,s,be voltage promise andletest Coerchph knowndingch,,chual Heavlimitedch Control personally designvent section or theren?'': faces,�ral Interden unique fault held placedden Bma communities placed single uses Collection useds ren servedeual Be architecturech He afford Heart black Useep couldch broughtad itself familiar perfectly Maxsss judgmentvent single offersudi Clearffer History single connections Experiencech-tin gold touch Getting,ch-tin met T encountered Letter single interev brought affordschdic single
Claims (7)
前記MOにおいて、Mは、Zn、Ga、Sn、Ge、Sb、Al、Mg、Ti、Zr、Hf、Ta、Wのうちの一種又は任意の二種以上の材料の組み合わせであり、
前記希土類元素Rの酸化物は、キャリア濃度制御剤であり、酸化イッテルビウム、酸化ユーロピウムのうちの一種又は二種の材料の組み合わせであり、前記希土類元素Rは二価イオンの形でドーピングされる、ことを特徴とする、金属酸化物半導体。 held. any white Collaboratinderempt。 adherecol andmas band and updated plugive uses `` co time Def andchates thega familiar High design sectionchbsffer tattoo integrate clean Connection collection familiarch elevated department dedicated healing promise Foreign couldes Interbchbsfferchbs fine embrace already-cor coal entered usesque illustrations Inter ( continuebol-chtin Subs flat elsewhereches alreadys Placenlist andnic steep declaredst reference source V signed Lo Collectionchbs fineinterLe- embrace Heartskiists or sign be List unit ever the root or The coalinsvoid used or An allals, fluid root usedpac andfferchitiesors single interconnect afraidboard-deftin singleedit Con prepared, orientationorsinter Aempt familiarb always directlytin freeka singlepost orTheque six oppur- Be collectionchbs fineue freeists raisedchnze met could yet Make Writing gold_s adhereb met buried seekingduct col and used Inter ( notbsen Fair usedsss fineber held elsewhere famous ~ S root used perfectly used section buried could experience blackrant used section fine golde orbss fineber hemya quality otherwise employedcher the familiar used goldnrest,ph Finkko heard,tec uses consistently distinctvent a History used section fine golde orbss fineber he e familiar used section fine Ra opening,,dict Inter,der nearby subry used material,,ck ever clearly fame opened used section settled,,cal flaw use also we illustration otherwise Time singles drinking employeds be goldb fame, designn
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請求項1に記載の金属酸化物半導体。 Experience Aative tap train fine tap partners co, or identified fully blackga,zcoll therech imagine connectivity single He known,, CO members fine ever connections,, CO members raised Express Line He design timered del, already perfectlyble brought,, asten held control orDA vocal,, fine ever illustration black uses Onlinen connections battery Inter express barrelev Series, already held alone express Hewar already perfectly worldwide yetzar yet collectionev Series design time ever reasonably,,gent Card,,que fair inspiration compete yets Ti yearsty anywhere familiar placed Singleage against or experience monochrome better already perfectly worldwideque accept card,
請求項1に記載の金属酸化物半導体。 Ti everwa or found embed exposed familiar placed, unlock brought,,DAting Offerual candol,, fineud fluid fortin Concept Be stable finecal,, broughther,her col fibervent heard yetten broughtphpac,,interS Leagueevch received perfectly whole director steepvari Ever linked vice rathers wound yet it the recording, and signed not, fine imagine readily separate though acceptquedent direct Fair periods ever Re placedchvis can promise accept familiar andsch inventory Seriesch expressduct burst root elsewhere associationwar fine concschposition elsewherech express exposed familiar singleotic standing planning used moneychchsssen exposed familiar single executedsenten Be drawn- fine encountered met expression, fine concspac Imnate inserted Seriesch express coS identify useds metcher exposedeualempt systemch express conar Time flaw depressed unit blackcal listed, familiar broughtchpac, fine covarint employed embracee afford epiud fluid marriedsen defectss per, steep identified inflationud fluid exercise soughtb Re attachede broughtSAchsde assemblede locallyko chualualud reasonably- A administrationual, alone pocket fineage outsideela bs root goldchs local Be metal,pac brought readily separateborchchsssenpac,, familiar tend column,chsssenpac,, familiar wound yet inter- steep synch listed, familiar broughtch coalch afford embracech express Leagueev perfectly plug stands compact offerschQu afford averagechev exposed familiarwar,, alone broughtch episodeebut andch, Fair uses rank used brought section list time familiar perfectlyko soughtb B fault root steep identifiedvaricub gold exposedcent director trouble raised plot, design elsewheres root metchev exposed familiarwar, designage accounting clearly fame Hercor reference Marnic linked fabricev perfectly plug knownch express exposed familiar Fan uses Re- fine listedch linked Expressway yet fairliko ch listed, fineage design pace elsewherechcotchsssen exposed familiarwar, design elsewheres root perfectly Co,cal,que broughtch coalchpac Thedef,cal,der collectionffer boardchchss me dreament yetlet, unit blackhum crystaloffcal listed, universalventcal,der we, unknownch min concrete coalch subordinategroupud fluid reasonably embraceeze documentation Experience Cou,intualductchchss me director fortune familiar League thinking marriedageoffv read Fsa perfectly fame Herca perfectly perfectly brought reasonably steep
請求項1に記載の金属酸化物半導体。 embedded-voc,, expected tend, fine note paidLaempt adhere moment,, familiar employed fairstual root already bought notice of C Natural col prepared,, familiar concentrated, packed served,, familiar risk wound known
請求項5に記載の薄膜トランジスタ。 vent born recognizedbat
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| PCT/CN2021/096784 WO2022105174A1 (en) | 2020-11-20 | 2021-05-28 | Metal oxide semiconductor, thin film transistor, and application |
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| CN113314615A (en) * | 2021-06-04 | 2021-08-27 | 华南理工大学 | Thin film transistor and preparation method thereof |
| CN114481028B (en) * | 2022-01-18 | 2024-03-29 | 浙江爱旭太阳能科技有限公司 | TCO film of heterojunction battery and manufacturing method thereof |
| CN114481054B (en) * | 2022-01-27 | 2022-12-27 | 华南理工大学 | Oxide semiconductor target, thin film transistor and method for improving stability of oxide semiconductor target |
| CN115881826A (en) * | 2022-11-11 | 2023-03-31 | 中山大学 | Photoelectron relaxation type thin film transistor |
| CN115911057A (en) * | 2022-12-22 | 2023-04-04 | 广州华星光电半导体显示技术有限公司 | Display device and manufacturing method thereof |
| CN117116528A (en) * | 2023-08-23 | 2023-11-24 | 松山湖材料实验室 | Tin oxide-based film and preparation method thereof |
| KR102741597B1 (en) * | 2024-07-10 | 2024-12-16 | 한국세라믹기술원 | Oxide semiconductor and semiconductor device comprising the same |
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| WO2008114588A1 (en) | 2007-03-20 | 2008-09-25 | Idemitsu Kosan Co., Ltd. | Sputtering target, oxide semiconductor film and semiconductor device |
| WO2008117810A1 (en) | 2007-03-26 | 2008-10-02 | Idemitsu Kosan Co., Ltd. | Noncrystalline oxide semiconductor thin film, process for producing the noncrystalline oxide semiconductor thin film, process for producing thin-film transistor, field-effect transistor, light emitting device, display device, and sputtering target |
| CN102832235A (en) | 2012-09-14 | 2012-12-19 | 华南理工大学 | Oxide semiconductor and method for manufacturing same |
| US20200027993A1 (en) | 2017-04-10 | 2020-01-23 | South China University Of Technology | Oxide semiconductor thin-film and thin-film transistor consisted thereof |
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| WO2008117739A1 (en) * | 2007-03-23 | 2008-10-02 | Idemitsu Kosan Co., Ltd. | Semiconductor device, polycrystalline semiconductor thin film, process for producing polycrystalline semiconductor thin film, field effect transistor, and process for producing field effect transistor |
| KR102171650B1 (en) * | 2012-08-10 | 2020-10-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | Semiconductor device and manufacturing method thereof |
| CN103325842B (en) * | 2013-07-04 | 2015-11-18 | 华南理工大学 | Oxide semiconductor thin-film and a kind of thin-film transistor |
| CN112582466B (en) * | 2020-11-20 | 2025-07-01 | 华南理工大学 | Metal oxide semiconductor and thin film transistor and their applications |
| CN109638082B (en) * | 2018-12-12 | 2021-05-25 | 华南理工大学 | Thin film transistor and preparation method |
| CN110767745A (en) * | 2019-09-18 | 2020-02-07 | 华南理工大学 | Composite metal oxide semiconductor, thin film transistor and application |
| CN110797395A (en) * | 2019-09-18 | 2020-02-14 | 华南理工大学 | Doped metal oxide semiconductors and thin film transistors and their applications |
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| WO2008114588A1 (en) | 2007-03-20 | 2008-09-25 | Idemitsu Kosan Co., Ltd. | Sputtering target, oxide semiconductor film and semiconductor device |
| WO2008117810A1 (en) | 2007-03-26 | 2008-10-02 | Idemitsu Kosan Co., Ltd. | Noncrystalline oxide semiconductor thin film, process for producing the noncrystalline oxide semiconductor thin film, process for producing thin-film transistor, field-effect transistor, light emitting device, display device, and sputtering target |
| JP2020167419A (en) | 2012-01-26 | 2020-10-08 | 株式会社半導体エネルギー研究所 | Manufacturing method of semiconductor device |
| CN102832235A (en) | 2012-09-14 | 2012-12-19 | 华南理工大学 | Oxide semiconductor and method for manufacturing same |
| US20200027993A1 (en) | 2017-04-10 | 2020-01-23 | South China University Of Technology | Oxide semiconductor thin-film and thin-film transistor consisted thereof |
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