JP7655641B2 - Bonding method and bonding device - Google Patents

Description

This disclosure relates to a joining method and a joining device.

Patent Document 1 discloses a bonding method in which a substrate to be processed and a supporting substrate are held by suction on a first holding part and a second holding part arranged opposite each other, and the second holding part is pressed against the first holding part while each substrate is heated by a heating mechanism of each holding part, thereby bonding the substrate to be processed and the supporting substrate.

JP 2013-65677 A

One aspect of the present disclosure provides a technology that reduces warping of a first substrate including a glass substrate and a resin layer before bonding the first substrate to a second substrate, thereby improving the bonding accuracy of the first substrate and the second substrate.

A bonding method according to an aspect of the present disclosure includes the following steps (A) to (C). (A) A first substrate including a glass substrate and a resin layer is adsorbed and held by a first holding unit. (B) A second substrate is adsorbed and held by a second holding unit. (C) The first holding unit and the second holding unit are moved relatively to bring the first substrate and the second substrate into contact with each other via an adhesive and pressurized. The bonding method includes the following steps (D) to (E). (D) The first substrate is heated by a heating unit. (E) The first substrate is transported using a transport unit that transports the first substrate from the heating unit to the first holding unit. Before the first substrate is adsorbed and held by the first holding unit, the first substrate is heated by the heating unit, thereby reducing warping of the first substrate. The transport unit includes a second heating unit that heats the first substrate. The bonding method includes heating the first substrate by the second heating unit.

According to one aspect of the present disclosure, warping of a first substrate including a glass substrate and a resin layer can be reduced before bonding the first substrate to a second substrate, thereby improving the bonding accuracy of the first substrate and the second substrate.

FIG. 1 is a plan view illustrating a joint system according to one embodiment. FIG. 2 is a side view of the interface system of FIG. FIG. 3 is a side view showing an example of the first substrate and the second substrate. FIG. 4 is a plan view showing an example of a joining device. FIG. 5 is a front view showing an example of the delivery section and the reversing section. FIG. 6 is a side view showing an example of the reversing unit. FIG. 7 is a side view illustrating an example of the conveying unit. FIG. 8 is a plan view showing an example of the first transport arm of the transport unit. FIG. 9 is a plan view showing an example of the second transport arm of the transport unit. FIG. 10 is a cross-sectional view showing an example of the heating unit. FIG. 11 is a cross-sectional view showing an example of a joint portion. FIG. 12 is a cross-sectional view showing an example of the operation of the joining portion. FIG. 13 is a flowchart illustrating a bonding method according to one embodiment. FIG. 14 is a side view illustrating an example of the second heating section. FIG. 15 is a side view showing an example of a warpage measuring unit.

Embodiments of the present disclosure will be described below with reference to the drawings. Note that the same or corresponding configurations in each drawing are given the same reference numerals, and descriptions thereof may be omitted. In addition, the X-axis direction, the Y-axis direction, and the Z-axis direction are mutually perpendicular directions, the X-axis direction and the Y-axis direction are horizontal directions, and the Z-axis direction is vertical.

First, a bonding system 1 according to this embodiment will be described with reference to Figures 1 and 2. As shown in Figure 3, the bonding system 1 forms a laminated substrate T by bonding a workpiece substrate W and a support substrate S via an adhesive G. The workpiece substrate W is the first substrate, and the support substrate S is the second substrate.

The substrate W to be processed includes, for example, a glass substrate Wa and a resin layer Wb formed on the glass substrate Wa. A plurality of electronic circuits may be formed in advance on the surface of the glass substrate Wa on which the resin layer Wb is formed. Of the surfaces of the substrate W to be processed, the surface facing the support substrate S is described as the "joining surface Wj", and the surface opposite the joining surface Wj is described as the "non-joining surface Wn". The joining surface Wj is the surface of the resin layer Wb, and the non-joining surface Wn is the surface of the glass substrate Wa. After the substrate W to be processed and the support substrate S are joined, the glass substrate Wa is thinned by a polishing process.

As described above, the substrate W to be processed includes a glass substrate Wa and a resin layer Wb formed on the glass substrate Wa. The resin layer Wb is formed, for example, by applying a resin composition onto the glass substrate Wa and heating the applied resin composition. The resin layer Wb is then cooled to room temperature.

After the resin layer Wb is formed, the substrate W to be processed may warp during the process of cooling the resin layer Wb due to the difference in thermal expansion between the resin layer Wb and the glass substrate Wa. When a glass substrate Wa is used as the base material for the resin layer Wb, the difference in thermal expansion between the resin layer Wb and the base material is larger than when a silicon substrate or the like is used instead of the glass substrate Wa, resulting in greater warping.

In this embodiment, as will be described in detail later, a heating section 130 that heats the substrate W to be processed before bonding the substrate W to the support substrate S is provided inside the bonding device 80. Therefore, warping that occurs in the process of cooling the resin layer Wb after its formation can be reduced immediately before bonding. As a result, the accuracy of the horizontal alignment of the substrate W to be processed and the support substrate S immediately before bonding can be improved, and bonding accuracy can be improved.

The support substrate S is a substrate of approximately the same diameter as the substrate W to be processed, and supports the substrate W to be processed. For example, a glass substrate is used as the support substrate S. Of the surfaces of the support substrate S, the surface facing the substrate W to be processed is referred to as the "bonding surface Sj," and the surface opposite the bonding surface Sj is referred to as the "non-bonding surface Sn."

The adhesive G is, for example, a thermosetting resin adhesive. Thermosetting refers to the property that the material is not easily deformed at room temperature (for example, about 20°C) but becomes softened and easier to mold when heated, and when heated further, the material polymerizes and hardens, and does not return to its original state. For example, the adhesive G has a softening temperature of about 120 to 140°C and a hardening temperature of about 180°C. The adhesive G may have multiple structures.

As shown in FIG. 1, the joining system 1 includes a loading/unloading station 2 and a processing station 3. The loading/unloading station 2 and the processing station 3 are integrally connected in this order in the negative Y-axis direction.

The loading/unloading station 2 comprises a cassette placement table 10 and a first transport area 11. The cassette placement table 10 is a place where cassettes Cw, Cs, and Ct, which store multiple substrates (e.g., 25 substrates) in a horizontal position, are placed. The loading/unloading station 2 has, for example, four placement sections 12 arranged in a row. Each placement section 12 is respectively placed with, for example, a cassette Cw that stores a substrate to be processed W, a cassette Cs that stores a support substrate S, and a cassette Ct that stores a laminated substrate T.

In the first transport region 11, a transport path 13 extending in the X-axis direction and a first transport device 14 movable along the transport path 13 are arranged. The first transport device 14 is also movable in the Y-axis direction and can rotate around the Z-axis, and transports the substrate to be processed W, the support substrate S, and the laminated substrate T between the cassettes Cw, Cs, and Ct placed on the placement section 12 and the transition device 30 of the processing station 3 described below.

The processing station 3 includes a second transport area 20, a transition device 30, a coating device 40, a heat treatment device 50, and a bonding device 80. The transition device 30, the coating device 40, the heat treatment device 50, and the bonding device 80 are arranged side by side around the second transport area 20. The arrangement and number of these devices can be set as desired.

A second transport device 21 is disposed in the second transport region 20. The second transport device 21 is movable in the X-axis direction, the Y-axis direction, and the Z-axis direction and can rotate around the Z-axis, and transports the substrate W to be processed, the support substrate S, and the laminated substrate T between the transition device 30, the coating device 40, the heat treatment device 50, and the bonding device 80.

The transition device 30 is disposed between the first transfer region 11 and the second transfer region 20. The first transfer device 14 and the second transfer device 21 transfer the substrate W to be processed, the support substrate S, and the laminated substrate T via the transition device 30. The coating device 40 coats the bonding surface Sj of the support substrate S with adhesive G. The heat treatment device 50 heats the support substrate S coated with adhesive G to a predetermined temperature, and vaporizes the organic solvent contained in the adhesive G. The bonding device 80 bonds the substrate W to the support substrate S via the adhesive G.

The joining system 1 includes a control device 90. The control device 90 is, for example, a computer, and includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. The storage medium 92 stores programs that control various processes executed in the joining system 1. The control device 90 controls the operation of the joining system 1 by having the CPU 91 execute the programs stored in the storage medium 92.

Next, the operation of the bonding system 1 will be briefly described with reference to Figures 1 and 2. In the bonding system 1, first, a cassette Cw containing multiple substrates W to be processed, a cassette Cs containing multiple support substrates S, and an empty cassette Ct are each placed on the placement section 12 of the loading/unloading station 2.

Then, the first transport device 14 removes the support substrate S from the cassette Cs and transports it to the transition device 30 of the processing station 3. At this time, the support substrate S is transported with the bonding surface Sj facing upward. The support substrate S transported to the transition device 30 is removed from the transition device 30 by the second transport device 21 and then transported to the coating device 40.

Next, the coating device 40 applies adhesive G to the bonding surface Sj of the support substrate S. After that, the support substrate S is removed from the coating device 40 by the second transport device 21 and then transported to the heat treatment device 50.

Then, the heat treatment device 50 heats the support substrate S to a predetermined temperature. This causes the organic solvent contained in the adhesive G applied to the support substrate S to evaporate. The adhesive G from which the organic solvent has evaporated becomes hard enough that it does not drip even when the support substrate S is tilted. The support substrate S is then removed from the heat treatment device 50 by the second transport device 21 and transported to the bonding device 80.

While the above-mentioned processing is being performed, the substrate W to be processed is removed from the cassette Cw by the first transport device 14 and transported to the transition device 30 of the processing station 3. At this time, the substrate W to be processed is transported with the bonding surface Wj facing upward. The substrate W to be processed transported to the transition device 30 is removed from the transition device 30 by the second transport device 21 and then transported to the bonding device 80.

When the loading of the substrate W and the support substrate S into the bonding device 80 is completed, the bonding device 80 bonds the substrate W and the support substrate S to form a laminated substrate T. The laminated substrate T is removed from the bonding device 80 by the second transport device 21, and then transferred to the first transport device 14 via the transition device 30, and is stored in a cassette Ct by the first transport device 14. This completes the series of bonding processes.

Next, an example of the bonding device 80 will be described with reference to FIG. 4. As shown in FIG. 4, the bonding device 80 includes a processing container 100 whose interior can be sealed. A loading/unloading port 101 through which the substrate to be processed W, the support substrate S, and the laminated substrate T pass is formed on the side of the processing container 100 facing the second transfer region 20. The loading/unloading port 101 is provided with an opening/closing shutter (not shown).

An inner wall 102 may be provided inside the processing vessel 100 to divide the area inside the processing vessel 100 into a pre-processing area D1 and a bonding area D2. The inner wall 102 is provided with a loading/unloading port 103 through which the substrate to be processed W, the support substrate S, and the laminated substrate T pass, and the loading/unloading port 103 is provided with an opening/closing shutter (not shown).

The pre-processing area D1 is provided with a transfer section 110 that transfers the substrate W to be processed, the support substrate S, and the laminated substrate T between the bonding device 80 and the outside. The transfer section 110 is disposed adjacent to the loading/unloading port 101.

The transfer section 110 includes a transfer arm 111 and support pins 112. The transfer arm 111 transfers the substrate W to be processed, the support substrate S, and the laminated substrate T between the second transport device 21 (see FIG. 1) and the support pins 112. The support pins 112 are provided in multiple locations, for example three locations, and support the substrate W to be processed, the support substrate S, and the laminated substrate T.

As described below, the transfer units 110 are arranged in multiple vertical rows, for example in two rows, and can simultaneously transfer any two of the substrates to be processed W, the support substrate S, and the laminated substrate T. For example, the substrates to be processed W or the support substrate S before bonding may be transferred at one transfer unit 110, and the laminated substrate T after bonding may be transferred at another transfer unit 110. Alternatively, the substrates to be processed W before bonding may be transferred at one transfer unit 110, and the support substrate S before bonding may be transferred at the other transfer unit 110.

Above the transfer section 110, there is provided an inversion section 120 which, for example, inverts the support substrate S upside down. The inversion section 120 has a holding arm 121 which clamps and holds the substrate W to be processed or the support substrate S. The holding arm 121 extends in the horizontal direction (Y-axis direction in FIG. 4), is freely rotatable around the horizontal axis, and is movable in the horizontal direction (X-axis direction and Y-axis direction) and the vertical direction (Z-axis direction).

The inversion unit 120 also includes an adjustment mechanism that adjusts the horizontal orientation of the workpiece substrate W or the support substrate S. The adjustment mechanism includes a detection unit 122 that detects the position of the notch of the support substrate S or the workpiece substrate W. In the inversion unit 120, the support substrate S or the workpiece substrate W held by the holding arm 121 is moved horizontally while the detection unit 122 detects the position of the notch of the support substrate S or the workpiece substrate W, thereby adjusting the position of the notch and adjusting the horizontal orientation of the support substrate S or the workpiece substrate W.

A heating section 130 for heating the substrate W to be processed is provided on the positive Y-axis side of the bonding area D2. The heating section 130 reduces warping of the substrate W to be processed by heating the substrate W to be processed.

On the negative side of the X-axis of the bonding area D2, a transport section 140 is provided to transport the substrate W, the support substrate S, and the laminated substrate T to the transfer section 110, the inversion section 120, the heating section 130, and the bonding section 150 described below. The transport section 140 is disposed adjacent to the load/unload opening 103.

The transport unit 140 includes, for example, a first transport arm 141 and a second transport arm 142. The first transport arm 141 and the second transport arm 142 are arranged in two tiers in the vertical direction from the bottom up, and can be moved in the horizontal and vertical directions by a drive unit (not shown).

The first transport arm 141 holds and transports, for example, the lower surface (non-bonding surface Wn) of the substrate W to be processed or the lower surface (non-bonding surface Wn) of the support substrate S. On the other hand, the second transport arm 142 holds and transports the outer periphery of the lower surface (bonding surface Sj) of the support substrate S that has been turned upside down in the inversion unit 120.

A bonding section 150 that bonds the substrate W to be processed and the support substrate S is provided on the positive X-axis side of the bonding area D2. The bonding section 150 bonds the substrate W to the support substrate S to form a laminated substrate T. The formed laminated substrate T is transported from the bonding section 150 to the delivery section 110 by the first transport arm 141 of the transport section 140, and then delivered to the delivery arm 111 via the support pins 112, and further delivered from the delivery arm 111 to the second transport device 21.

Next, an example of the transfer unit 110 will be described with reference to FIG. 5. As described above, the transfer unit 110 includes a transfer arm 111 and support pins 112. The transfer arm 111 transfers the substrate W to be processed, the support substrate S, or the laminated substrate T between the second transport device 21 and the support pins 112. The support pins 112 are provided in multiple locations, for example three locations, and support the substrate W to be processed, the support substrate S, or the laminated substrate T.

The transfer unit 110 includes an arm driver 113. The arm driver 113 includes a motor and moves the transfer arm 111 in the X-axis direction. The arm driver 113 is moved in the Y-axis direction along a rail 114 (see FIG. 4). The transfer arm 111 is movable in the horizontal direction (X-axis direction and Y-axis direction). The arm driver 113 may also move the transfer arm 111 in the Z-axis direction.

As shown in FIG. 5, a plurality of support pins 115, for example four support pins 115 for supporting the underside of the substrate W, support substrate S or laminated substrate T are provided on the delivery arm 111. Also, a guide 116 for positioning the substrate W, support substrate S or laminated substrate T supported by the support pins 115 is provided on the delivery arm 111. A plurality of guides 116, for example four guides 116 are provided to guide the side of the substrate W, support substrate S or laminated substrate T.

The transfer section 110 is arranged in two vertical stages, and the inversion section 120 is arranged vertically above the transfer section 110. The transfer arm 111 of the transfer section 110 moves horizontally below the holding arm 121 of the inversion section 120 and the adjustment mechanism 126. In addition, the support pin 112 of the transfer section 110 is arranged below the holding arm 121 of the inversion section 120.

Next, an example of the inversion unit 120 will be described with reference to Figures 5 and 6. As described above, the inversion unit 120 includes the holding arm 121 and the detection unit 122. The inversion unit 120 also includes a first drive unit 123. The first drive unit 123 includes a motor and the like, and rotates the holding arm 121 around a horizontal axis and moves it horizontally (X-axis direction and Y-axis direction). Note that the first drive unit 123 may move the holding arm 121 horizontally by rotating the holding arm 121 around a vertical axis.

A second drive unit 124 including, for example, a motor is provided below the first drive unit 123. The second drive unit 124 moves the first drive unit 123 in the vertical direction along the support column 125. The first drive unit 123 and the second drive unit 124 enable the holding arm 121 to rotate around a horizontal axis and move in the vertical and horizontal directions.

The adjustment mechanism 126 is supported on the support column 125 via a support plate 127. The adjustment mechanism 126 is provided adjacent to the holding arm 121. The adjustment mechanism 126 adjusts the horizontal orientation of the support substrate S or the substrate to be processed W held by the holding arm 121.

The adjustment mechanism 126 has a base 128 and a detection unit 122. The adjustment mechanism 126 detects the position of the notch of the support substrate S or the substrate to be processed W held by the holding arm 121 in the horizontal direction while adjusting the position of the notch, thereby adjusting the horizontal orientation of the support substrate S or the substrate to be processed W.

Next, an example of the transport unit 140 will be described with reference to Figures 7 to 9. As shown in Figure 7, the transport unit 140 includes a first transport arm 141 and a second transport arm 142 as described above. The first transport arm 141 and the second transport arm 142 are arranged in two tiers in this order from the bottom in the vertical direction. The first transport arm 141 and the second transport arm 142 may have different shapes as described below.

An arm driver 143 including, for example, a motor is provided at the base end of the first transport arm 141 and the second transport arm 142. The arm driver 143 moves the first transport arm 141 and the second transport arm 142 independently in the horizontal direction. The first transport arm 141, the second transport arm 142, and the arm driver 143 are supported by a base 144. The base 144 can be moved in the vertical direction by a driver (not shown) including a motor.

As shown in FIG. 8, the first transport arm 141 holds and transports the lower surface (non-bonding surface Wn, Sn in the case of the substrate W or support substrate S) of the substrate to be processed W, the support substrate S, or the laminated substrate T. The first transport arm 141 is forked at the tip.

A number of resin O-rings 145, for example four, are provided on the first transport arm 141. The O-rings 145 come into contact with the underside of the substrate W to be processed, the support substrate S, or the laminated substrate T, and hold these undersides by frictional force. The first transport arm 141 holds the substrate W to be processed, the support substrate S, or the laminated substrate T horizontally on the O-rings 145.

Also, on the first transport arm 141, for example, a first guide 146 and a second guide 147 are provided outside the substrate W, support substrate S, or laminated substrate T held by the O-ring 145. The first guide 146 is provided at the bifurcated tip of the first transport arm 141. The second guide 147 is formed in an arc shape on the opposite side of the first guide 146 across the substrate W, support substrate S, or laminated substrate T. The first guide 146 and the second guide 147 prevent the substrate W, support substrate S, or laminated substrate T from coming off the first transport arm 141. Note that when the substrate W, support substrate S, or laminated substrate T is held in an appropriate position by the O-ring 145, the substrate W, support substrate S, or laminated substrate T does not come into contact with the first guide 146 and the second guide 147.

As shown in FIG. 9, the second transport arm 142 holds and transports the outer periphery of the lower surface (bonding surface Sj) of the support substrate S. That is, the second transport arm 142 holds and transports the outer periphery of the bonding surface Sj of the support substrate S that has been turned upside down by the inversion unit 120. The second transport arm 142 is forked at the tip.

A plurality of holding parts 148, for example, four holding parts 148 are provided on the second transport arm 142. The holding parts 148 have a horizontal surface on which the outer periphery of the bonding surface Sj of the support substrate S is placed, and a tapered surface that slopes radially outward of the support substrate S as it moves upward from the horizontal surface. The tapered surface determines the horizontal position of the support substrate S. The second transport arm 142 holds the support substrate S horizontally on the holding parts 148. The second transport arm 142 holds the outer periphery of the bonding surface Sj of the support substrate S. Therefore, for example, it is possible to prevent the bonding surface Sj from becoming contaminated by particles adhering to the second transport arm 142.

Next, an example of the heating unit 130 will be described with reference to FIG. 10. The heating unit 130 includes, for example, a heat plate 131, an annular holder 132 that houses the heat plate 131 and holds the outer periphery of the heat plate 131, and a substantially cylindrical support ring 133 that surrounds the outer periphery of the holder 132.

Support pins 134 are provided at multiple locations, for example, three locations, on the heat plate 131. The support pins 134 support the substrate W to be processed and form a gap between the substrate W to be processed and the heat plate 131. The size H1 of the gap is, for example, 0.4 mm or more.

The hot plate 131 has a roughly disk shape and heats the substrate W to be processed via support pins 134. The hot plate 131 has, for example, a built-in heating mechanism 135. The heating mechanism 135 includes, for example, a heater. The heating temperature of the hot plate 131 is controlled, for example, by the control device 90, and the substrate W to be processed placed on the hot plate 131 is heated to a predetermined temperature.

Below the heat plate 131, for example, three lift pins 136 are provided for supporting and raising and lowering the substrate W to be processed from below. The lift pins 136 can be moved up and down by a lift drive unit 137. Near the center of the heat plate 131, for example, three through holes 138 are formed that penetrate the heat plate 131 in the thickness direction. The lift pins 136 are inserted through the through holes 138 and can protrude from the upper surface of the heat plate 131.

Next, the joining portion 150 will be described with reference to Figures 11 and 12. The joining portion 150 includes a first holding portion 151 and a second holding portion 152 that is disposed above the first holding portion 151 and faces the first holding portion 151.

The first holding part 151 and the second holding part 152 are, for example, electrostatic chucks, and hold the substrate W to be processed and the support substrate S by electrostatic adsorption. The first holding part 151 holds the substrate W to be processed from below, and the second holding part 152 holds the support substrate S from above. The substrate W to be processed and the support substrate S are held by the first holding part 151 and the second holding part 152 with the bonding surfaces Wj, Sj facing each other.

The first holding unit 151 and the second holding unit 152 may be provided with a vacuum suction unit that vacuum-sucks the support substrate S and the substrate to be processed W in addition to, or instead of, the electrostatic suction unit that electrostatically suctions the support substrate S and the substrate to be processed W.

The bonding section 150 includes a first heating mechanism 153 and a second heating mechanism 154. The first heating mechanism 153 is built into the first holding section 151, and heats the first holding section 151, thereby heating the substrate W to be processed held by the first holding section 151 to a predetermined temperature. The second heating mechanism 154 is built into the second holding section 152, and heats the second holding section 152, thereby heating the support substrate S held by the second holding section 152 to a predetermined temperature.

The bonding section 150 includes a pressure applying section 155. The pressure applying section 155 moves the second holding section 152 vertically downward to bring the support substrate S into contact with the substrate to be processed W and apply pressure. Note that the pressure applying section 155 only needs to move the first holding section 151 and the second holding section 152 relatively, and may also move the first holding section 151. The pressure applying section 155 includes a base member 156, a pressure vessel 157, a gas supply pipe 158, and a gas supply source 159. The base member 156 is attached to the ceiling surface inside the second chamber section 162, which will be described later.

The pressure vessel 157 is formed, for example, from a stainless steel bellows that is expandable and contractible in the vertical direction. The lower end of the pressure vessel 157 is fixed to the upper surface of the second holding portion 152, and the upper end of the pressure vessel 157 is fixed to the lower surface of the base member 156. One end of the gas supply pipe 158 is connected to the pressure vessel 157 via the base member 156 and the second chamber portion 162 described below, and the other end is connected to the gas supply source 159.

The pressure vessel 157 extends and lowers the second holding part 152 by supplying gas from the gas supply source 159 to the inside of the pressure vessel 157 via the gas supply pipe 158. As a result, the support substrate S comes into contact with the substrate W to be processed and is pressurized. The pressure applied to the substrate W to be processed and the support substrate S is adjusted by adjusting the pressure of the gas supplied to the pressure vessel 157.

The joining section 150 includes a chamber 160, a moving mechanism 170, a pressure reduction section 180, a first imaging section 191, and a second imaging section 192.

The chamber 160 is a processing vessel whose interior can be sealed, and includes a first chamber section 161 and a second chamber section 162. The first chamber section 161 is a bottomed, cylindrical vessel whose top is open, and contains the first holding section 151 and the like inside. The second chamber section 162 is a bottomed, cylindrical vessel whose bottom is open, and contains the second holding section 152, pressure vessel 157, and the like inside.

The second chamber section 162 is configured to be able to be raised and lowered vertically by a lifting mechanism (not shown), such as an air cylinder. The lifting mechanism lowers the second chamber section 162 to abut against the first chamber section 161, thereby forming an airtight space inside the chamber 160. A seal member 163 is provided on the abutting surface of the second chamber section 162 with the first chamber section 161 to ensure airtightness of the chamber 160. An O-ring, for example, is used as the seal member 163.

The moving mechanism 170 is provided on the outer periphery of the second chamber section 162 and moves the second holding section 152 in the horizontal direction via the second chamber section 162. A plurality of moving mechanisms 170 (e.g., five) are provided on the outer periphery of the second chamber section 162, and four of the five moving mechanisms 170 are used to move the second holding section 152 in the horizontal direction and the remaining one is used to rotate the second holding section 152 around the vertical axis.

The moving mechanism 170 includes a cam 171 that abuts against the outer periphery of the second chamber portion 162 to move the second holding portion 152, and a rotation drive unit 173 that rotates the cam 171 via a shaft 172. The cam 171 is provided eccentrically with respect to the central axis of the shaft 172. By rotating the cam 171 with the rotation drive unit 173, the central position of the cam 171 relative to the second holding portion 152 moves, and the second holding portion 152 can be moved in the horizontal direction.

The decompression section 180 is provided, for example, at the bottom of the first chamber section 161, and reduces the pressure inside the chamber 160. The decompression section 180 includes an intake pipe 181 for drawing in the atmosphere inside the chamber 160, and an intake device 182, such as a vacuum pump, connected to the intake pipe 181.

The first imaging unit 191 is disposed below the second holding unit 152 and images the lower surface (bonding surface Sj) of the support substrate S held by the second holding unit 152. The second imaging unit 192 is disposed above the first holding unit 151 and images the upper surface (bonding surface Wj) of the substrate W to be processed held by the first holding unit 151.

The first imaging section 191 and the second imaging section 192 are configured to be movable horizontally by a moving mechanism (not shown), and enter the chamber 160 before the second chamber section 162 is lowered to capture images of the substrate W to be processed and the support substrate S. The imaging data of the first imaging section 191 and the second imaging section 192 are transmitted to the control device 90. Note that, for example, wide-angle CCD cameras are used as the first imaging section 191 and the second imaging section 192, respectively.

Next, an example of the operation of the bonding device 80 will be described with reference to FIG. 13. When the substrate W to be processed is transferred to the delivery arm 111 of the delivery section 110 by the second transport device 21 (see FIG. 1), the delivery arm 111 transfers the substrate W to the support pins 112. The substrate W to be processed is then transported from the support pins 112 to the inversion section 120 by the first transport arm 141 of the transport section 140.

The notch position of the substrate W transported to the inversion unit 120 is detected by the detection unit 122 of the inversion unit 120, and the horizontal orientation is adjusted (step S101). The substrate W is then transported from the inversion unit 120 to the heating unit 130 by the first transport arm 141 of the transport unit 140.

The substrate W to be processed that has been transported to the heating section 130 is heated to a predetermined temperature by the hot plate 131 of the heating section 130 (step S102). This reduces warping of the substrate W to be processed. The substrate W to be processed is then transported from the heating section 130 to the first holding section 151 of the bonding section 150 by the first transport arm 141 of the transport section 140, and is adsorbed and held by the first holding section 151 (step S103). The first holding section 151 is heated in advance to a desired temperature by the first heating mechanism 153.

When the support substrate S is delivered to the delivery arm 111 of the delivery section 110 by the second transport device 21 (see FIG. 1), the delivery arm 111 delivers the support substrate S to the support pins 112. The support substrate S is then transported from the support pins 112 to the inversion section 120 by the first transport arm 141 of the transport section 140.

The support substrate S transported to the inversion unit 120 has the notch position detected by the detection unit 122 of the inversion unit 120 and the horizontal orientation is adjusted (step S104). The support substrate S is then inverted upside down by the inversion unit 120 (step S105). As a result, the bonding surface Sj of the support substrate S faces downward.

Then, the support substrate S is transported from the inversion section 120 to the second holding section 152 of the bonding section 150 by the second transport arm 142 of the transport section 140, and is adsorbed and held by the second holding section 152 (step S106). The second holding section 152 is heated in advance to a desired temperature by the second heating mechanism 154.

When the loading of the substrate W and the support substrate S into the bonding unit 150 is completed, the substrate W and the support substrate S are aligned in the horizontal direction (step S107). A plurality of reference points are formed in advance on the substrate W and the support substrate S. The bonding unit 150 horizontally moves the first imaging unit 191 and the second imaging unit 192 shown in FIG. 11 to capture the reference points of the substrate W and the support substrate S, respectively. The bonding unit 150 adjusts the horizontal position of the support substrate S using the moving mechanism 170 so that the position of the reference point included in the image captured by the first imaging unit 191 matches the position of the reference point included in the image captured by the second imaging unit 192. That is, the horizontal position of the support substrate S is adjusted by rotating the cam 171 using the rotation drive unit 173 to move the second holding unit 152 in the horizontal direction via the second chamber unit 162.

Then, the joining unit 150 causes the first imaging unit 191 and the second imaging unit 192 to exit the chamber 160, and then lowers the second chamber unit 162. This causes the second chamber unit 162 to abut against the first chamber unit 161, forming an enclosed space within the chamber 160. The joining unit 150 then reduces the pressure within the chamber 160 by sucking in the atmosphere within the chamber 160 using the decompression unit 180.

Next, the bonding unit 150 uses the pressure unit 155 to lower the second holding unit 152 to bring the substrate W into contact with the support substrate S (step S108). Furthermore, the bonding unit 150 pressurizes the substrate W and the support substrate S by supplying gas to the pressure vessel 157 to a desired pressure inside the pressure vessel 157 (step S109).

The adhesive G applied to the bonding surface Sj of the support substrate S is softened by heating, and the support substrate S is pressed against the substrate W to be processed at a desired pressure for a predetermined time, whereby the substrate W and the support substrate S are bonded to form a laminated substrate T. At this time, the atmosphere inside the chamber 160 is reduced pressure, so that the generation of air bubbles between the substrate W and the support substrate S can be suppressed.

Then, the laminated substrate T is transported from the bonding section 150 to the delivery section 110 by the first transport arm 141 of the transport section 140, and then delivered to the delivery arm 111 via the support pins 112, and then delivered from the delivery arm 111 to the second transport device 21. The second transport device 21 transports the laminated substrate T out of the bonding device 80 (step S110).

According to this embodiment, a heating unit 130 is provided inside the bonding device 80, and the heating unit 130 heats the substrate W before the bonding unit 150 bonds the substrate W and the support substrate S. The heating unit 130 heats the substrate W, thereby reducing warping of the substrate W that occurs during the cooling process. If the substrate W is then adsorbed and held by the first holding unit 151, the horizontal alignment accuracy of the substrate W and the support substrate S can be improved. Therefore, the bonding accuracy can be improved.

Next, the transport section 140 according to the first modified example will be described with reference to FIG. 14. The transport section 140 may include a second heating section 200 that heats the substrate W to be processed that has been heated by the heating section 130. During transport of the substrate W to be processed, the temperature of the substrate W to be processed can be maintained by the second heating section 200, and the substrate W to be processed can be prevented from warping again.

The second heating section 200 includes, for example, a hot plate 201 arranged at a distance from the substrate W to be processed. The hot plate 201 is arranged horizontally above the substrate W to be processed held by the first transport arm 141. A gap is formed between the hot plate 201 and the substrate W to be processed, and the hot plate 201 does not come into contact with the bonding surface Wj of the substrate W to be processed. This makes it possible to prevent the bonding surface Wj from being contaminated by particles adhering to the hot plate 201.

The hot plate 201 is, for example, disk-shaped and has a diameter approximately the same as that of the substrate W to be processed or a diameter larger than that of the substrate W to be processed. The hot plate 201 has, for example, a built-in heating mechanism 202. The heating mechanism 202 includes, for example, a heater. The heating temperature of the hot plate 201 is controlled, for example, by the control device 90, and the substrate W to be processed arranged below the hot plate 201 is maintained at a predetermined temperature.

The second heating section 200 may be equipped with a heating nozzle instead of the hot plate 201. The heating nozzle heats the substrate W to be processed by ejecting gas that has been heated to a predetermined temperature toward the substrate W. In this case, the substrate W can be heated without contact. The gas ejected by the heating nozzle is, for example, an inert gas such as nitrogen gas or argon gas. When the heating temperature is low, air or the like may be used.

Next, the transport unit 140 according to the second modified example will be described with reference to FIG. 15. The transport unit 140 may include a warpage measurement unit 210 that measures the warpage of the substrate W to be processed. The warpage measurement unit 210 includes, for example, a camera, a laser interferometer, or a laser displacement meter. The warpage of the substrate W to be processed is measured in a state in which the substrate W to be processed is supported slidably at multiple points, and is measured in a state in which the substrate W to be processed is not adsorbed. The warpage measurement unit 210 transmits the measured data to the control device 90.

When the transport section 140 is equipped with the warpage measuring section 210, the warpage of the substrate W to be processed can be confirmed during transport of the substrate W to be processed. For example, when the transport section 140 does not have the second heating section 200, if the transport section 140 is equipped with the warpage measuring section 210, it can be confirmed whether the temperature of the substrate W to be processed decreases during transport of the substrate W to be processed and whether the warpage of the substrate W to be processed increases. Note that the transport section 140 may be equipped with both the second heating section 200 and the warpage measuring section 210.

If the warpage of the substrate W measured by the warpage measuring section 210 is outside the allowable range, the control device 90 may return the substrate W to the heating section 130 by the transport section 140 and heat the substrate W again by the heating section 130. This allows the warpage of the substrate W to be within the allowable range. Note that if the warpage of the substrate W measured by the warpage measuring section 210 is within the allowable range, the control device 90 transports the substrate W to the first holding section 151 of the bonding section 150 by the transport section 140.

In addition, if the warpage of the substrate W to be processed measured by the warpage measuring unit 210 is outside the allowable range, the control device 90 may change the setting of the heating temperature or heating time for heating the substrate W to be processed by the heating unit 130. The heating temperature after the change is set to be higher than the heating temperature before the change. In addition, the heating time after the change is set to be longer than the heating time before the change. From the next time onwards, the warpage of the substrate W to be processed can be kept within the allowable range.

In this embodiment, the warpage measuring unit 210 is provided in the transport unit 140, but may also be provided in the heating unit 130. Before the transport unit 140 receives the substrate W from the heating unit 130, it can be confirmed whether the warpage of the substrate W is within the allowable range. If the warpage of the substrate W is outside the allowable range, the control device 90 changes the setting of the heating temperature or heating time for heating the substrate W in the heating unit 130. The warpage measuring unit 210 may be provided in both the heating unit 130 and the transport unit 140.

In addition, when the transport section 140 is equipped with both the second heating section 200 and the warpage measuring section 210, and the warpage of the substrate W measured by the warpage measuring section 210 is outside the allowable range, the control device 90 may change the setting of the heating temperature or heating time for heating the substrate W in the second heating section 200. In this case as well, the warpage of the substrate W can be kept within the allowable range.

Although the embodiments of the joining method and joining device according to the present disclosure have been described above, the present disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. Naturally, these also fall within the technical scope of the present disclosure.

80 Bonding device 130 Heating section 140 Transport section 150 Bonding section 151 First holding section 152 Second holding section 155 Pressurizing section 90 Control device (control section)
W: substrate to be processed (first substrate)
Wa: glass substrate Wb: resin layer S: supporting substrate (second substrate)

Claims (8)

A bonding method comprising: sucking and holding a first substrate including a glass substrate and a resin layer with a first holding part; sucking and holding a second substrate with a second holding part; and moving the first holding part and the second holding part relatively to bring the first substrate and the second substrate into contact with each other via an adhesive and apply pressure thereto,
heating the first substrate with a heating unit; and transporting the first substrate from the heating unit to the first holding unit using a transport unit,
before the first holding unit suction-holds the first substrate, the first substrate is heated by the heating unit, thereby reducing warping of the first substrate ;
the transport unit includes a second heating unit that heats the first substrate,
The bonding method further comprises heating the first substrate by the second heating section . A bonding method comprising: sucking and holding a first substrate including a glass substrate and a resin layer with a first holding part; sucking and holding a second substrate with a second holding part; and moving the first holding part and the second holding part relatively to bring the first substrate and the second substrate into contact with each other via an adhesive and apply pressure thereto,
heating the first substrate with a heating unit; and transporting the first substrate from the heating unit to the first holding unit using a transport unit,
before the first holding unit suction-holds the first substrate, the first substrate is heated by the heating unit, thereby reducing warping of the first substrate ;
the transport unit includes a warpage measuring unit that measures a warpage of the first substrate,
measuring a warp of the first substrate by the warp measuring unit . The bonding method according to claim 2 , further comprising: if the warpage of the first substrate measured by the warpage measuring unit is outside an allowable range, heating the first substrate again by the heating unit. 4. The bonding method according to claim 2 , further comprising changing a setting of a heating temperature or a heating time for heating the first substrate by the heating unit when the warp of the first substrate measured by the warp measuring unit is outside an allowable range. A bonding apparatus for bonding a first substrate including a glass substrate and a resin layer to a second substrate via an adhesive, comprising:
a first holding unit that suction-holds the first substrate;
a second holding portion that suction-holds the second substrate;
a pressurizing unit that relatively moves the first holding unit and the second holding unit to bring the first substrate and the second substrate into contact with each other via the adhesive and apply pressure thereto;
A heating unit that heats the first substrate;
a transport unit configured to transport the first substrate from the heating unit to the first holding unit;
A control unit that controls the pressurizing unit, the heating unit, and the conveying unit;
Equipped with
the control unit reduces warping of the first substrate by heating the first substrate with the heating unit before the first holding unit adsorbs and holds the first substrate ;
The bonding apparatus , wherein the transport section includes a second heating section that heats the first substrate . A bonding apparatus for bonding a first substrate including a glass substrate and a resin layer to a second substrate via an adhesive, comprising:
a first holding unit that suction-holds the first substrate;
a second holding portion that suction-holds the second substrate;
a pressurizing unit that relatively moves the first holding unit and the second holding unit to bring the first substrate and the second substrate into contact with each other via the adhesive and apply pressure thereto;
A heating unit that heats the first substrate;
a transport unit configured to transport the first substrate from the heating unit to the first holding unit;
A control unit that controls the pressurizing unit, the heating unit, and the conveying unit;
Equipped with
the control unit reduces warping of the first substrate by heating the first substrate with the heating unit before the first holding unit adsorbs and holds the first substrate ;
The bonding apparatus , wherein the transport unit includes a warpage measuring unit that measures warpage of the first substrate . The bonding apparatus according to claim 6 , wherein the control unit heats the first substrate again by the heating unit when the warp of the first substrate measured by the warp measuring unit is outside an allowable range. 8. The bonding apparatus according to claim 6, wherein the control unit changes a setting of a heating temperature or a heating time for heating the first substrate by the heating unit when the warp of the first substrate measured by the warp measuring unit is outside an allowable range.

Images