JP7655891B2 - High power multi-layer module for paralleling power devices with low inductance and fast switching - Google Patents

Description

CROSS-REFERENCE TO PRIOR APPLICATIONS This application claims priority to U.S. patent application Ser. No. 16/658,630, filed Oct. 21, 2019, which is incorporated herein by reference in its entirety for all purposes as if fully set forth herein, and this application further claims priority to U.S. patent application Ser. No. 16/266,771, filed Feb. 4, 2019, which is incorporated herein by reference in its entirety for all purposes as if fully set forth herein, and this application This application further claims priority to U.S. Provisional Patent Application No. 62/790,965, filed January 10, 2019, which is incorporated by reference in its entirety for all purposes as if fully set forth herein, and this application further claims priority to U.S. Provisional Patent Application No. 62/914,847, filed October 14, 2019, which is incorporated by reference in its entirety for all purposes as if fully set forth herein.

1. FIELD OF THE DISCLOSURE The present disclosure is directed to a high power multilayer module having low inductance and fast switching for paralleling power devices. Additionally, the present disclosure is directed to a method of constructing a high power multilayer module having low inductance and fast switching for paralleling power devices.

2. Related Art As will be appreciated by those skilled in the art, power modules are known in a variety of forms. A power module provides physical containment of power components, usually power semiconductor devices. These power semiconductors are usually soldered or sintered onto a power electronics substrate. A power module typically carries the power semiconductors, provides electrical and thermal contact, and includes electrical insulation.

The current trend of electrification is placing increasing demands on power modules, including power semiconductor devices, power electronic components, and/or the like, associated with the power module. For example, improved efficiency and higher power density. These demands extend from the system level to the component level. However, operating the power module to meet these demands increases heat generation within the power module. Due to physical limitations of the power semiconductor devices, power electronic components, and/or the like, this increased heat generation limits the operational capabilities of the power module. Specifically, the various components of the power module, including the power semiconductor devices, power electronic components, and/or the like, typically have operating temperature limitations.

Furthermore, the parasitic impedance of the power module also limits the practical implementation of these devices in the current technology. Specifically, the loop inductance during switching events can result in voltage overshoot and ringing. This loop inductance reduces stability, increases switching losses, creates Electromagnetic Interference (EMI), and stresses system components. Finally, these factors can limit the maximum switching frequency, which is desirable to reduce the size of external filters in the power conversion system.

For these reasons, there is a need for a power module that is configured to handle the additional generation of heat.

Additionally, there is a need for power modules that are configured to address parasitic impedances, such as loop inductance, to increase stability, reduce switching losses, reduce EMI, and/or limit stress on system components.

One general aspect includes a power module including at least one conductive power board, a housing disposed on the at least one conductive power board, a first terminal electrically connected to the at least one conductive power board, the first terminal including a contact surface located on the housing, a second terminal including a contact surface located on the housing, a third terminal electrically connected to the at least one conductive power board, a plurality of power devices disposed on the at least one conductive power board and connected to the at least one conductive power board, the third terminal being electrically connected to at least one of the plurality of power devices, a base plate, and a plurality of pin fins disposed on the base plate, the plurality of pin fins configured to provide direct cooling to the power module.

One general aspect includes a power module including a base plate, at least one power board, a housing disposed on the at least one power board, a first terminal electrically connected to the at least one power board, a second terminal, a third terminal electrically connected to the at least one power board, a plurality of power devices electrically connected to the at least one power board, a gate-source board electrically connected to the plurality of power devices, and a plurality of pin fins disposed on the base plate, the plurality of pin fins configured to provide direct cooling to the power module.

One general aspect includes a method of constructing a power module, the method including providing at least one power board, disposing a housing on the at least one power board, connecting a first terminal to the at least one power board, providing a second terminal, electrically connecting a third terminal to the at least one power board, connecting a plurality of power devices to the at least one power board, and mounting a gate-source board electrically connected to the plurality of power devices, the gate-source board configured to receive at least one electrical signal, the method further including providing a plurality of pin fins disposed on a base plate, and configuring the plurality of pin fins to cool at least one component of the power module.

Additional features, advantages, and aspects of the present disclosure may be described in or may be apparent from a review of the following detailed description, drawings, and claims. Moreover, it should be understood that both the above summary of the disclosure and the following detailed description are for illustrative purposes and are intended to provide further explanation without limiting the scope of the present disclosure as set forth in the claims.

The accompanying drawings, which are included to provide a further understanding of the present disclosure, are incorporated in and constitute a part of the specification, illustrate aspects of the disclosure, and together with the following detailed description, serve to explain the principles of the disclosure. Structural details of the disclosure are not shown in more detail than may be necessary for a basic knowledge of the disclosure and the various ways in which it may be practiced.

FIG. 2 illustrates a schematic diagram of a half-bridge based topology of a power module according to an aspect of the present disclosure. FIG. 1B illustrates a current loop between a DC link capacitor and the inner switch position of the power module of FIG. 1A. FIG. 1 illustrates various interconnects and associated impedances according to aspects of the present disclosure. FIG. 1 illustrates various interconnections and associated impedances of switch positions according to aspects of the present disclosure. FIG. 1 is a schematic perspective view of a power module according to one aspect of the present disclosure. FIG. 2 is a schematic top view of a power module according to one aspect of the present disclosure. FIG. 1 illustrates a plurality of single phase modules in a parallel configuration according to aspects of the present disclosure. FIG. 1 illustrates a first power module configuration according to an aspect of the present disclosure. FIG. 1 illustrates a second power module configuration according to an aspect of the present disclosure. FIG. 1 illustrates multiple power modules in a full bridge configuration according to an aspect of the present disclosure. FIG. 1 illustrates a plurality of power modules in a three-phase configuration according to an aspect of the present disclosure. FIG. 1 illustrates a single power module having a full bridge configuration in accordance with aspects of the present disclosure. FIG. 2 is an exploded view of a power module according to an aspect of the present disclosure. FIG. 11 is a partial view of the power module of FIG. 10 . FIG. 2 is a top view of a phase leg of a power module constructed in accordance with the present disclosure with respective nodes identified in a half-bridge topology. FIG. 12B is a schematic diagram of a phase leg of a power module according to FIG. 12A constructed in accordance with the present disclosure, with respective nodes identified in a half-bridge topology. FIG. 12C is a cross-sectional view of the phase leg of FIGS. 12A and 12B. FIG. 12C is a cross-sectional view of the phase leg of FIGS. 12A and 12B, including the current path. FIG. 1 illustrates contact surfaces and bussing of a power module according to one aspect of the disclosure. FIG. 16A illustrates an embodiment of a terminal of a power module according to an embodiment of the present disclosure. FIG. 16B illustrates an embodiment of a terminal of a power module according to an embodiment of the present disclosure. FIG. 16C illustrates an embodiment of a terminal of a power module according to an embodiment of the present disclosure. FIG. 2 is a schematic diagram illustrating multiple devices in parallel according to an aspect of the present disclosure. FIG. 2 is a perspective view of an effective gate switching loop according to one aspect of the present disclosure. FIG. 13 is a top view of an effective gate switching loop according to an aspect of the present disclosure. FIG. 2 illustrates an exemplary partial embodiment including a power module according to an aspect of the present disclosure. FIG. 1 illustrates an exemplary laminated busbar according to the present disclosure. FIG. 22 illustrates a portion of an example laminated busbar according to FIG. 21. FIG. 22 illustrates another portion of the example laminated busbar according to FIG. FIG. 1 illustrates a phase output busbar according to the present disclosure. FIG. 1 is a perspective view of an exemplary embodiment including a power module and a laminated bus bar, according to an aspect of the present disclosure. FIG. 26 is a first cross-sectional view of an exemplary embodiment including a power module and a laminated bus bar according to FIG. 25. FIG. 26 is a second cross-sectional view of an exemplary embodiment including a power module and a laminated bus bar according to FIG. 25. FIG. 2 illustrates an exemplary single module gate driver according to the present disclosure. FIG. 2 illustrates an exemplary single module gate driver according to the present disclosure. FIG. 1 illustrates a current sensing component according to an aspect of the present disclosure. FIG. 31 shows the current sensing components according to FIG. 30 positioned with the phase output busbars. FIG. 1 illustrates an example three-phase motor drive power diagram according to one aspect of the present disclosure. FIG. 1 illustrates a schematic diagram of multiple power devices in parallel according to an aspect of the present disclosure. FIG. 1 illustrates a top view of an active gate switching loop and a power module according to an aspect of the present disclosure. FIG. 2 is a perspective view of an arrangement including a power module and a housing according to one embodiment of the present disclosure. FIG. 36 is a side view of the configuration of FIG. FIG. 36 is a partial perspective view of the configuration of FIG. FIG. 36 is another partial perspective view of the configuration of FIG. FIG. 36 is another partial perspective view of the configuration of FIG. FIG. 36 is another partial perspective view of the configuration of FIG. FIG. 36 is another partial perspective view of the configuration of FIG. FIG. 1 illustrates a method of implementing and operating an arrangement including a power module. FIG. 2 is a perspective bottom view of a power module according to one aspect of the present disclosure. FIG. 44 is a side view of the power module according to FIG. 43. FIG. 44 is a bottom view of the power module according to FIG. 43 . FIG. 44 is a partial perspective bottom view of the power module according to FIG. 43. FIG. 2 is a perspective bottom view of a power module according to one aspect of the present disclosure. FIG. 48 is a side view of the power module according to FIG. 47 . FIG. 48 is a bottom view of the power module according to FIG. 47 . FIG. 48 is a partial perspective bottom view of the power module according to FIG. 47. FIG. 2 is a perspective bottom view of a power module according to one aspect of the present disclosure. FIG. 52 is a side view of the power module according to FIG. 51 . FIG. 52 is a bottom view of the power module according to FIG. 51 . FIG. 52 is a partial perspective bottom view of the power module according to FIG. 51 . FIG. 2 is a perspective bottom view of a power module according to one aspect of the present disclosure. FIG. 56 is a side view of the power module according to FIG. 55. FIG. 56 is a bottom view of the power module according to FIG. 55. FIG. 1 is a perspective view of a power module embodiment according to one aspect of the present disclosure. FIG. 1 is a perspective view of a power module embodiment according to one aspect of the present disclosure. FIG. 60 is a perspective view of a power module embodiment according to FIG. 59. 1 is a graph plotting junction temperature versus output current for two different power modules.

Aspects of the present disclosure, as well as various features and advantageous details thereof, are described in more detail with reference to non-limiting aspects and examples described and/or illustrated in the accompanying drawings and detailed in the following description. It should be noted that features shown in the drawings are not necessarily drawn to scale, and features of one aspect may be used with other aspects as would be recognized by one of ordinary skill in the art, even if not explicitly stated herein. Descriptions of well-known components and processing techniques may be omitted so as not to unnecessarily obscure aspects of the present disclosure. The examples used herein are intended merely to facilitate an understanding of the manner in which the present disclosure may be practiced, and to further enable those skilled in the art to practice aspects of the present disclosure. Thus, the examples and aspects herein should not be construed as limiting the scope of the present disclosure. The scope of the present disclosure is defined solely by the appended claims and applicable law. It should also be noted that the same reference numerals represent similar parts throughout the several views of the drawings.

This disclosure describes a power module that may include structures optimized for state-of-the-art wide bandgap power semiconductor devices such as Gallium Nitride (GaN), Silicon Carbide (SiC) and the like, capable of carrying large amounts of current and voltage and switching at increasingly faster speeds than established technologies. Conventional power electronic packages with internal layouts intended for use with Silicon (Si) device technologies have limited capabilities for these semiconductors.

The disclosed power module distributes current evenly among large arrays of paralleled devices and can be configured to have significantly lower loop inductance than standard packaging approaches. Multi-level current paths with terraced power terminals simplify external connections to bussing systems and reduce inductance between the power module and filtering capacitors. The layout of this power module is highly configurable and can be configured to adopt most power circuit topologies common in the power electronics industry.

The disclosed power module significantly improves internal module performance, system level implementation, manufacturability and ease of use through the addition of tighter power loops and logical external terminal placement.

In this regard, the disclosed power modules can be configured to provide at least one or more of the following:
Highly optimized low inductance power module structure Modular, scalable, flexible layout and power flow Equalized paralleling of multiple power semiconductors to form high current switch positions Optimized gate and sense signal structure for paralleling multiple power semiconductors Sense connectors for temperature sensing and overcurrent protection Suitable form factor for high voltage operation up to approximately 1700V (Volts) or higher
Scalable height for over 1700V operation; Multi-layer internal conductor layout for optimized external system interconnect; Modular internal construction designed to accommodate a variety of state-of-the-art materials, mounting, isolation and interconnection techniques; Fully optimized for high performance system level integration; Easy to parallelize and directly scale to higher currents; Configurable in a wide variety of power topologies including half-bridge, full-bridge, 3-phase, booster, chopper and other similar configurations; Scalable system implementation to meet a variety of power processing needs

In essence, the disclosed power module configuration allows the full capabilities of advanced power semiconductors to be utilized, resulting in significant improvements in power density, switching, efficiency and the like.

The power devices in a power module vary in structure and purpose. The term "power device" refers to various forms of transistors and diodes designed for high voltage and high current. The transistors may be controllable switches that allow unidirectional or bidirectional current flow (depending on the type of device), while the diodes may allow unidirectional current flow and may not be controllable. Transistor types may include, but are not limited to, metal oxide field effect transistors (MOSFETs), junction field effect transistors (JFETs), bipolar junction transistors (BJTs), insulated gate bipolar transistors (IGBTs), and other similar transistor types.

Power devices may include wide band gap (WBG) semiconductors, including gallium nitride (GaN), silicon carbide (SiC) and other similar semiconductors, which may offer numerous advantages over traditional silicon (Si) as a power device material. Nevertheless, various aspects of the present disclosure may utilize Si-based power devices and achieve some of the advantages described herein. Key metrics for WBG semiconductors may include one or more of the following non-limiting aspects:
Higher voltage blocking Higher current density Higher temperature operation Faster switching Improved thermal performance Lower on-resistance (reduced conduction losses)

Lower turn-on and turn-off energy (reduced switching losses). It should be understood that in some aspects of the present disclosure, these key indicators of WBG semiconductors described above are not required and may not be implemented.

To effectively utilize the WBG semiconductor devices, power modules (also called power packages) are used. Power modules can perform several functions, including one or more of the following non-limiting aspects:
To provide electrical interconnection of power semiconductor devices into useful topologies.
Protect sensitive devices from moisture, vibration, contamination, and the like.
To create an effective and efficient means of removing waste heat generated from the device as a result of conduction and switching losses.
Facilitating a system level implementation with robust power and signal electrical connections to the internal layout, which can be bolt-on, crimp-on, solder, plug and receptacle, and other similar implementations.
Providing voltage safety, including internal dielectric encapsulation and external voltage creepage and clearance distances based on industry adopted standards.

It should be understood that in some aspects of the present disclosure, these features described above are not required and may not be implemented.

FIG. 1A illustrates a schematic of a half-bridge based topology of a power module according to an aspect of the present disclosure. Half-bridge based topologies are the basic building blocks of many switching power converters. For motor drives, inverters and DC-DC converters, these topologies are typically connected to a DC power source 112 with a bank of DC link capacitors 102 as an intermediate connection between the topology and the DC power source 112. This is illustrated diagrammatically in FIG. 1A. The DC link capacitors 102 can serve to filter out ripple on the line and counter the effects of current path inductance. Two half-bridges in parallel can form a full bridge, and three half-bridges in parallel can form a three-phase topology. Three-phase topologies are often also referred to as six packs, which means six switch positions in three phase legs. Additionally, other topologies are contemplated for the power module including common source, common drain and neutral clamping.

FIG. 1A further illustrates a power module 100 having one or more switch positions 104. The power module 100 can include a first terminal 106, a second terminal 108, and a third terminal 110.

Figure 1B shows the current loop between the DC link capacitor and the switch position inside the power module of Figure 1A. The current loop 114 between the DC link capacitor 102 and the switch position 104 inside the power module 100 is critical in this system and has a significant impact on the semiconductor switching performance.

No system is perfect. For example, in any electrical system, there is undesirable parasitic resistance, capacitance, and inductance. These impedances introduce detrimental effects on performance and reliability unless they are reduced or mitigated. While each interconnect may have resistance and capacitance associated with it, the parasitic inductance may be the dominant effect on switching power devices. The higher the inductance, the more energy is stored in the magnetic field, which causes voltage overshoot and ringing during switching transitions.

Figure 2 illustrates various interconnections and associated impedances according to aspects of the present disclosure. For a power conversion system such as the half-bridge configuration of the power module 100 presented in Figure 1A, impedances 204 exist within each component, including the DC link capacitor 102, the bussing system 202, the power module 100, and the like, as well as the physical interconnections between them. This is illustrated in Figure 2 with respect to inductance. While there are often many more functional elements and associated impedances within a power converter, this loop may be the most critical with respect to switching performance.

In most power converters, these inductances must be carefully considered in the system design. This often requires adding more DC link capacitors 102 or slowing down the switching speed to counteract the parasitic effects. While these are effective, they result in bulkier systems (larger, heavier, more capacitors) with higher losses (due to the slower switching events where both high currents and voltages are present).

In power packages intended for Si devices, the turn-on and turn-off times characteristic of Si IGBTs are inherently slow enough that the inductances encountered in the internal power loops are small enough. However, for the extremely fast switching of wide bandgap devices such as SiC MOSFETs, the inductance of conventional packages can result in voltage overshoots of hundreds of volts.

These problems are further amplified because many SiC devices must be paralleled together to reach high current levels within the power module 100. The parallel arrays of power switches and diodes in various combinations (all switches, all diodes, interleaved diodes, edge diodes, etc.) are referred to as "positions" or "switch positions." Together, each switch in the switch positions 104 acts as an effective single switch that increases the amount of current the circuit can handle by lowering the effective resistance or reducing the total losses.

3 illustrates various interconnections and associated impedances of switch positions according to aspects of the disclosure. In switch positions 104, each switch or power device 302 has its own individual current path in the structure. As shown in FIG. 3, each interconnection has an associated impedance 204. As further shown in FIG. 3, switch positions 104 can include any number of power devices 302, as indicated by the symbols shown at arrows 304. To ensure that the effective current paths are equalized between the power devices 302, care must be taken to ensure that the power devices 302 each encounter a matched inductance. If this is not done, the currents and voltages encountered during switching transitions will not be equally distributed between the power devices 302 across the switch positions 104, which can stress components unevenly and increase switching losses. These are exacerbated by thermal effects. Unequal current loading and switching events create uneven heat rise, which results in drift in semiconductor properties across the paralleled switch positions 104 and greater instability.

Conventional power packages are typically designed for a single Si IGBT or small arrays of these devices (usually four or less). Therefore, conventional power packages are not suitable for paralleling large numbers of SiC MOSFETs and diodes (or similar wide bandgap devices) resulting in well-controlled, clean switching.

The disclosed power module 100 provides a solution for power devices 302, such as wide bandgap devices, that can include one or more of the following non-limiting aspects.
The internal inductance of the power module 100 is reduced.
Facilitates equalized current paths between the paralleled power devices 302 in one switch position 104 .
Heat is distributed equally among the power devices 302 across a switch position 104 .
It has an external structure that allows for a low inductance interconnection with the DC link capacitor 102 .
It can safely carry high currents (hundreds of amps) at high voltages (≧1700V).

It should be understood that in some aspects of the present disclosure, these above-described characteristics of the power module 100 are not required, and these above-described characteristics of the power module 100 may not be implemented.

FIG. 4A shows a schematic perspective view of a power module according to one aspect of the present disclosure, and FIG. 4B shows a schematic top view of a power module according to one aspect of the present disclosure. Specifically, FIGS. 4A and 4B show a half-bridge configuration of the power module 100. The disclosed power module 100 addresses each of the previously listed concerns with a specifically designed power layout and associated structure that facilitates a common, mostly bridge topology with equalized, low-inductance current paths for each switch position 104. The terminals 106, 108, 110 can be positioned such that the current path to the external filtering DC link capacitor 102 can also have a correspondingly low inductance, with a simple laminated busbar, described in more detail below, that does not require bends or special design features.

Figure 4A shows the power terminal pinout for a single half-bridge configuration of the power module 100. The V+ terminal 106 and the V- terminal 108 can be intentionally placed close to each other (with enough space for voltage clearance) to physically minimize the external current loop to the DC link capacitor 102.

The power module 100 may include signal terminals 502, 504, 506, 508. The specific pinout of the signal terminals 502, 504, 506, 508 may be modular and may be changed as needed. This configuration is shown in FIG. 4A. As shown, there are four pairs of signal pins for the signal terminals 502, 504, 506, 508 for differential signal transmission. Of course, any number of signal pins and any number of signal terminals may be implemented to provide the functionality described in connection with this disclosure. Each switch position 104 may utilize a pair of pins, and the terminals 502, 504 for gate signals and source kelvin may be utilized for optimal control. The remaining terminal pairs of the signal terminals 506, 508 may be used for internal temperature sensors, overcurrent sensing, or other diagnostic signals. It is contemplated that more pins and/or more signal terminals may be added to any row as needed, as long as those pins and/or signal terminals do not lead to voltage isolation issues. In some aspects, these other diagnostic signals can be generated from diagnostic sensors, which can include strain gauges that sense vibrations and the like. Diagnostic sensors can further determine humidity. Additionally, diagnostic sensors can sense any environmental or device characteristic.

Figure 5 illustrates multiple single-phase modules in a parallel configuration according to aspects of the present disclosure. Modularity is fundamental to the disclosed power module 100. To reach higher currents, the power modules 100 in a single-phase configuration can be easily paralleled. As shown in Figure 5, there are three power modules 100 shown, but there is no limit to the number of power modules that can be configured in this manner. In this regard, arrow 510 indicates that additional power modules 100 can be placed in parallel. When paralleling, the corresponding respective terminals 106, 108, 110 can be electrically connected between each of the power modules 100.

Figure 6A shows a first power module configuration according to an aspect of the present disclosure, and Figure 6B shows a second power module configuration according to an aspect of the present disclosure. Another distinct feature may be that the disclosed power module 100 is scalable. This is shown in Figures 6A and 6B. As shown in Figure 6B, the width of the power module 100 may be increased to accommodate more paralleled devices in each switch position 104 compared to the power module 100 shown in Figure 6A. Additional fastener holes 512 may be added to the power contacts of the terminals 106, 108, 110 as the current of the power module 100 increases. It is important to note that the power modules 100 may be paralleled as shown in Figure 5, or scaled as shown in Figure 6B, to match most power levels without sacrificing the advantages of the present disclosure, including low inductance, clean switching, high power density, and the like.

7 shows a power module in a full bridge configuration according to an embodiment of the present disclosure, FIG. 8 shows a power module in a three-phase configuration according to an embodiment of the present disclosure, and FIG. 9 shows a single power module with a full bridge configuration according to an embodiment of the present disclosure. In some embodiments, modularity can be found in the formation of various electrical topologies, such as FIG. 7 for a full bridge configuration of two power modules 100 and FIG. 8 for a three-phase configuration of three power modules 100. For these topologies, the V+ terminal 106 and the V- terminal 108 can be interconnected while the phase output terminals 110 can be left separate. The configurations of FIG. 7 and FIG. 8 can also be placed in a single housing, and the configurations of FIG. 7 and FIG. 8 can also be configured to have a shared base plate as shown in FIG. 9. In this way, power density can be increased at the expense of a more complex and costly unit.

Various arrangements, configurations, and width-scaled versions of the power module 100 can cover a range of applications and power levels, but the core internal components and layout can remain exactly the same. This enhances the modularity of the disclosed power module 100. This structure encompasses a family of modules targeted at customer-specific systems that exhibit high performance levels while being easy to use and expand.

FIG. 10 illustrates an exploded view of a power module according to aspects of the disclosure, and FIG. 11 illustrates a partial view of the power module of FIG. 10. Specifically, FIG. 10 illustrates several elements within the power module 100. These elements include one or more of a base plate 602, a gasket 604, one or more power boards 606, one or more edge power contacts 608, one or more switch positions 104, one or more temperature sensors 610, a housing sidewall 612, a center power contact 614, a signal interconnect assembly 616, a housing lid 618, fasteners 620, a captive fastener 622, and the like. In one aspect, the base plate 602 can include a metal. In one aspect, the metal can include copper. It is further contemplated that the power module 100 may include fewer or different elements than those described herein.

The power module 100 may include a base plate 602. The base plate 602 may provide structural support for the power module 100 and may facilitate heat spreading for thermal management of the power module 100. The base plate 602 may include a base metal such as copper, aluminum, or the like, or a metal matrix composite (MMC) material that may provide a coefficient of thermal expansion (CTE) match to reduce thermally generated stresses. In one aspect, the MMC material may be a high conductivity metal such as copper, aluminum, and the like, a low CTE metal such as molybdenum, beryllium, tungsten, and/or a non-metallic composite material such as diamond, silicon carbide, beryllium oxide, graphite, embedded pyrolytic graphite, or the like. Depending on the material, the base plate 602 may be formed by machining, casting, stamping, or the like. To protect the surface of the base plate 602 and improve solderability, the base plate 602 may have a metal plating, such as nickel, silver, gold, and/or the like. In one aspect, the base plate 602 may have a flat back surface. In one aspect, the base plate 602 may have a convex cross section to improve planarity after reflow. In one aspect, the base plate 602 may have pin fins 642 for direct cooling, which will be discussed further below with reference to FIGS. 43-59.

The power module 100 may include a gasket 604. The gasket 604 may improve the sealing process by providing a liquid tight seal. In this regard, the power module 100 may include a dielectric encapsulant therein. The gasket 604 may be formed by injection molding, dispensing, or the like, and may be applied to a groove in the housing sidewall 612 and compressed between the housing sidewall 612 and the base plate 602.

The power module 100 may include one or more power boards 606. The one or more power boards 606 may provide electrical interconnection, voltage isolation, heat transfer, and the like to the power devices 302. The one or more power boards 606 may be constructed as direct bond copper (DBC), active metal braze (AMB), insulated metal substrate (IMS), or the like. In the case of an IMS construction, the one or more power boards 606 and the base plate 602 may be integrated into the same element. In some aspects, the one or more power boards 606 may be attached to the base plate 602 by solder, thermally conductive epoxy, silver sintering, or the like. In one aspect, two power boards 606 may be used, one for each switch position 104.

The power module 100 may include one or more edge power contacts 608. A surface of one of the edge power contacts 608 may form the V+ or first terminal 106. A surface of one of the edge power contacts 608 may form the phase or third terminal 110. The one or more edge power contacts 608 may generate a high current path between an external system and the one or more power substrates 606. The one or more edge power contacts 608 may be manufactured from sheet metal by an etching process, stamping operation, or the like. To facilitate bending of the one or more edge power contacts 608 to aid in final assembly, the one or more edge power contacts 608 may have a partial thickness bend assist limb 624. In one aspect, the edge power contact(s) 608 can be folded over a captive fastener 622. In one aspect, the edge power contact(s) 608 can be attached directly to the power board 606 by soldering, ultrasonic welding, or the like. To protect the surface and improve solderability, the edge power contact(s) 608 can have a metal plating, such as nickel, silver, gold, and/or the like.

To aid in the attachment process, in one aspect, the base 636 of the edge power contact 608 can be split to form a foot. To protect the surface and improve solderability, the base 636 can have a metal plating such as nickel, silver and/or gold.

The power module 100 may further include one or more switch positions 104. The one or more switch positions 104 may include power devices 302, which may include any combination of controllable switches and diodes placed in parallel to meet current, voltage and efficiency requirements. The power devices 302 may be attached by solder, conductive epoxy, silver sintered material or the like. The top pads on the power devices 302, including the gate and source, may be wire bonded to their corresponding respective locations by power wire bonds 628. The power wire bonds 628 may include wires of aluminum, aluminum alloy, copper or the like, which may be attached to both legs by ultrasonic welding or the like, forming a conductive arch between the two metal pads. Signal bonds 626 may be formed in a similar manner, and may be aluminum, gold, copper or the like. In some embodiments, the wire diameter of the power wire bond 626 can be smaller than the wire of the power wire bond 628.

The power module 100 may further include one or more temperature sensors 610. The one or more temperature sensors 610 may be implemented by resistive temperature sensor elements attached directly to the power board 606. Other types of temperature sensors are contemplated, including resistance temperature detectors (RDTs) type sensors, Negative Temperature Coefficient (NTC) type sensors, optical type sensors, thermistors, thermocouples, and the like. The one or more temperature sensors 610 may be attached by solder, conductive epoxy, silver sintered material, or the like, and then wire bonded to the signal interconnect assembly 616. The power module 100 may further include one or more diagnostic sensors, including strain gauges that sense vibrations, and the like. The diagnostic sensors may further determine humidity. Additionally, diagnostic sensors can sense any environmental or device characteristic.

The power module 100 may further include a housing sidewall 612. The housing sidewall 612 may be formed of a synthetic material. In one aspect, the housing sidewall 612 may be an injection molded plastic element. The housing sidewall 612 may provide electrical insulation, voltage creepage and clearance, structural support, a cavity to hold the voltage, and a moisture barrier seal. In one aspect, the housing sidewall 612 may be formed in an injection molding process using a reinforced high temperature plastic.

The power module 100 may further include a central power contact 614. A surface of the central contact 614 may form the V- terminal or second terminal 108. The central power contact 614 may create a high current path between an external system and the power device 302. The central power contact 614 may be manufactured from sheet metal by an etching process, stamping operation, or the like. The central power contact 614 may be separated from the underlying power board 606 by being embedded in the housing sidewall 612 (as shown), or may be soldered or welded to a secondary power board, as described below. As shown in FIG. 11, the central power contact 614 may include one or more openings 632 for receiving corresponding fasteners 634 that fasten the central power contact 614 to the housing sidewall 612.

As shown in FIG. 11, the lower switch position power devices 302 can be wire bonded 640 from their terminals directly to the central power contact 614. To aid in bending during final assembly, the central power contact 614 can have a partial thickness bend assist line 624. To protect the surface and improve bondability, the central power contact 614 can have a metal plating such as nickel, silver, gold and/or the like.

The power module 100 may further include a signal interconnect assembly 616. The signal interconnect assembly may be a gate-source board. The signal interconnect assembly 616 may be a small signal circuit board that facilitates electrical connection from the signal contacts to the power devices 302. The signal interconnect assembly 616 may allow for gate and source Kelvin connections as well as connections to additional nodes or internal sensing elements. The signal interconnect assembly 616 may allow for individual gate resistors for each power device 302. The signal interconnect assembly 616 may be a printed circuit board, ceramic circuit board, flexible circuit board, embedded metal strips, or the like disposed within the housing sidewall 612. In one aspect, the signal interconnect assembly 616 may include multiple assemblies. In one aspect, the signal interconnect assembly 616 may include multiple assemblies, one for each switch position 104.

The power module 100 may further include a housing lid 618. The housing lid 618 may be a composite element. In one aspect, the housing lid 618 may be an injection molded plastic element. The housing lid 618 may provide electrical insulation, voltage creepage and clearance, and structural support. In this regard, the housing lid 618 may form a closed assembly with the housing sidewall 612. The closed assembly may prevent foreign objects from entering the interior of the power module 100. In one aspect, the housing lid 618 may be formed in an injection molding process using reinforced high temperature plastic.

The power module 100 may further include a fastener 620. The fastener 620 may be a threaded screw. Other types of fasteners are contemplated. The fastener 620 may be used to screw directly into the housing sidewall 612 to fasten multiple elements within the power module 100. The fastener 620 may be used to attach the housing lid 618, attach the signal interconnect assembly 616, embed the central power contact 614 (if not embedded by another means), fasten the housing sidewall 612 to the base plate 602, and the like.

The power module 100 may further include a captive fastener 622. The captive fastener 622 may be a hex nut placed in the housing sidewall 612 and the housing lid 618 and may hold the edge power contacts 608 and the center power contacts 614 under the contacts when they are bent so that they do not fall out. It is contemplated that other types of fasteners or connectors may implement the captive fastener 622. The captive fastener 622 may facilitate an electrical connection to an external bus bar or cable. The captive fastener 622 may be positioned such that when the power module 100 is bolted to the bus bar, the captive fastener 622 and the edge power contacts 608 are pulled up into the bushing to form a better electrical connection. If the captive fastener 622 were secured to the housing, the stiffness of the busbar would cause the captive fastener 622 to pull the bussing down into the power module 100, resulting in an insufficient connection.

In one aspect, the housing lid 618 can include an opening having a shape that matches the exterior shape of the captive fastener 622 to prevent the captive fastener 622 from rotating. The captive fastener 622 can receive a corresponding fastener (shown in FIG. 26 ) that extends through the fastener hole 512 of the central power contact 614 to facilitate electrical connection to an external bus bar or cable.

In one aspect, the housing sidewall 612 can include an opening having a shape that matches the exterior shape of the captive fastener 622 to prevent the captive fastener 622 from rotating. The captive fastener 622 can receive a corresponding fastener (shown in FIG. 26 ) that extends through the fastener hole 512 of the one or more edge power contacts 608 to facilitate electrical connection to an external bus bar or cable.

To achieve low internal inductance, the current paths in the power module 100 can be made wide, short, and overlapping whenever possible to achieve flux cancellation. Flux cancellation occurs when currents flowing in loops are moving in opposite directions in close proximity, effectively canceling the associated magnetic fields of the currents. The main advantage of this modular approach is that the entire width of the footprint is utilized for conduction. The height of the module can be minimized to reduce the length that currents must travel within the structure.

The power loop of a half-bridge phase leg is shown in FIG. 11. The edge power contacts 608 and center power contacts 614 are folded up to show detail. The wide, low profile edge power contacts 608 and center power contacts 614 direct current into the power devices 302. The effective current paths from the terminal surface to the individual power devices 302 can be functionally equivalent. Furthermore, the power devices 302 can be placed in close proximity, which minimizes imbalance in the relative loop inductance of the power devices 302 and ensures good thermal coupling.

12A shows a top view of a phase leg of a power module constructed in accordance with the present disclosure with respective nodes identified in a half-bridge topology, and FIG. 12B shows a schematic diagram of a phase leg of a power module according to FIG. 12A constructed in accordance with the present disclosure with respective nodes identified in a half-bridge topology. The power module 100 may include one or more diodes. In one aspect, the diodes in the schematic diagram may be individual diodes (not shown) placed in anti-parallel. In one aspect, the diodes in the schematic diagram may be a representation of the body diode (not shown) of the power device 302 implemented as a MOSFET.

In one aspect, the current path can start from the V+ node terminal 608, which can be attached to the power substrate 630 and drain D1 of the upper one of the power devices 302. The source S1 of the upper one of the power devices 302 can then be wire bonded 628 to the lower power substrate pad 630, which is attached to the drain D2 and phase power terminal 608 of the lower power device 302. Finally, the source S2 of the lower power device 302 can be wire bonded 628 to the V- power contact terminal 614, which can be above the lower power substrate 630, which can provide some overlap and sufficient voltage isolation of the V- power contact terminal 614 from the power substrate 630 below it.

Figure 13 shows a cross-sectional view of the phase legs of Figures 12A and 12B, and Figure 14 shows a cross-sectional view of the phase legs of Figures 12A and 12B, including the current paths. As shown in Figure 13, the tabs of the power contacts or terminals 106, 108, 110 are bent over when in their final configuration in the power module 100 structure. The thickness of the layers has been exaggerated to show detail. When visualizing current flow, all of the elements in this diagram can be considered conductors.

13 further illustrates a terraced configuration of the power module 100 having multiple heights or elevations. In this regard, the vertical position of the terminal 614 is shown higher than the vertical position of the terminal 608. This elevation difference is indicated by arrow 702. This multiple height configuration can provide a critical loop, which will be described in more detail below. Additionally, this multiple height configuration can aid in providing bus connections, which will also be described in more detail below.

14 shows an overlay of the current paths from the V+ terminal to the V− terminal, which represents the critical loops for clean switching according to aspects of the disclosure. Inductance is proportional to the path length, decreases with increasing cross-sectional area of the conductor, and is reduced by magnetic field flux cancellation. The identified path starts at terminal 608, passes through power board 630, crosses power device 302, flows to second board 630, passes through power device 302 and is output by terminal 614. The identified path has low inductance due to the following factors:
The module height is low.
The power device 302 is in close proximity to the terminals 608, 614.
All functional elements are tightly packed.
The cross-sectional area of the conductor is wide.
The paralleled wire bonds 628 of each power device 302 are optimized.
The current distribution among the power devices 302 is even.
Flux cancellation occurs when current direction is reversed in the lower switch position.
Flux cancellation occurs in the external V+/V- busbars.

Figure 15 shows the contact surfaces and bussings of a power module according to one aspect of the disclosure. The contact surface of the V+ terminal 608 and the contact surface of the phase terminal 608 can be planar, while the top surface of the V- terminal 614 is offset from the remaining terminals. As shown in Figure 15, this feature allows the outer V+/V- stacked bussing 802, 804 to contact both terminals 608, 614 without requiring bending of the stacked bussings 802, 804. The offset distance 702 (shown in Figure 13) can be adjusted to match the thickness of the busbar metal and associated dielectric isolation film.

The low internal module inductance, combined with the minimized external inductance of the bussings 802, 804, 806 leading to the DC link capacitor 102 bank, optimizes the power module 100 structure for clean, fast switching events with low voltage overshoot and stable performance. The smaller loop inductance reduces the total capacitance required on the DC link capacitor 102.

Collectively, these advantages allow for smaller switching losses, higher switching frequencies, improved controllability, and reduced EMI. Ultimately, this helps system designers achieve higher power density and more robust power conversion systems.

Figures 16A, 16B and 16C show various aspects of terminals for a power module according to aspects of the present disclosure. A multi-layer layout with a V- terminal 614 in the center of the power module 100 may be essential to this design. Proper voltage isolation of this terminal 614, which overlies directly on the output trace on the power board 630, can be achieved by various structures forming an isolation structure. This power module 100 design is compatible with each of the following structures:

16A illustrates one embodiment of the isolation of the V-terminal 614. In this embodiment, the power module 100 can include an embedded isolation 810 of the V-terminal 614. The embedded isolation 810 can be formed of plastic or other synthetic material. The embedded isolation 810 can be located within the housing sidewall 612 as a strip 810 bridging the central region. In one embodiment, the strip 810 can be formed of plastic. The power contacts 614 can be embedded in the strip 810 by a number of methods, including mechanical fastening, such as with a threaded screw, direct integration, such as with a plastic overmolding process, riveting in place using a plastic heat staking operation, or other similar methods.

Figure 16B shows another embodiment of the isolation of the V- terminal 614. In this embodiment, the power module 100 can provide isolation of the V- terminal 614 by a power board isolation. In this regard, a secondary power board 812 can be utilized to provide isolation by a layer of dielectric material of the secondary power board 812, such as ceramic or the like. The secondary power board 812 can be soldered, sintered or epoxied to the power board 630, while the power contacts 614 can be soldered or welded to the top metal pads of the secondary board. The advantage of this approach is that the heat transfer of the center power contact 614 is improved. This is because the secondary power board 812 is highly conductive, which is believed to facilitate the removal of heat from the power contacts 614 to a cold plate or heat sink.

FIG. 16C illustrates another aspect of isolation of the V- terminal 614. In this regard, a thick film isolator 814 can be utilized. The thick film isolator 814 can utilize a thick film dielectric printed directly onto the power substrate 630 and can provide voltage blocking. The center contact 614 can be attached to the thick film isolator 814 by epoxy, by soldering directly to a thin layer of thick metal film printed on top of the dielectric film, or by other similar techniques.

In another embodiment, the isolation of the V- terminal 614 can include a suspension isolation (not shown). In this embodiment, the central power contact 614 can be suspended above the power substrate 630 at a sufficient distance and attached to the housing sidewall 612 in a manner similar to a recessed approach. In this regard, a gel encapsulant filling the power module 100 can provide dielectric isolation. The central contact 614 may need to utilize a high rigidity material, but may not interfere with the formation of the power wire bond 628 between the underlying device and the contact.

FIG. 17 is a schematic diagram of multiple devices in parallel according to aspects of the present disclosure. Specifically, FIG. 17 shows three power devices 302. This is merely by way of example and for ease of explanation and understanding. The power module 100 of the present disclosure may include any number of power devices 302.

The gate control and sense signals are significant contributors to the switching performance of the power module 100 and can be especially important in the paralleled switch positions 104. Signal loops within the power module 100 can be optimized for high performance, robustness and uniform current distribution. As with power loops, paths can be configured to be limited in length, cross-sectional width, and associated external components can be placed as physically close as possible to the signal terminals 502, 504.

For a paralleled array of power devices 302, such as transistors, particularly MOSFETs, the timing and magnitude of the gate currents must be balanced to match the turn-on and turn-off conditions. The power module 100 may utilize individual ballasting resistors R _G1 , R _G2 , R _G3 that may be placed in close proximity to the gates of the power devices 302 and only separated by gate wire bonds. These components have low resistance and help buffer the current flowing to each individual power device 302. These components serve to decouple the gates of the power devices 302, preventing oscillation and helping to ensure equalized turn-on signals for the paralleled power devices 302. A single external resistor R _DRIVER may be utilized and connected to these paralleled resistors R _G1 , R _G2 , R _G3 to control the turn-on speed of the effective switch positions 104.

The gate resistors R _G1 , R _G2 , R _G3 can be surface mount packages, integrated thick film layers, printed thick film, wire bondable chips, or the like, depending on the application.

18 shows a perspective view of an effective gate switching loop according to one aspect of the disclosure, and FIG. 19 shows a top view of an effective gate switching loop according to one aspect of the disclosure. The signal board or signal interconnect assembly 616 can have rails 816, 818 that connect to the gate and source Kelvin connector terminals 502, 504 at the edge of the board of the signal interconnect assembly 616. The top rail 818 can be connected to the gate wire bond pads through individual gate resistors 820, and the bottom rail 816 can be wire bonded directly to the source pads of the power devices 302. This can be considered a true Kelvin connection because the source Kelvin bond is not in the current path of the power source bond. The Kelvin connection can be important for clean and efficient control and can reduce the effect of high drain-source currents on the signal loop.

18 and 19 further show optional signal connections 506, 508 on the left side of the signal interconnect assembly 616. These connections can be used for temperature measurements or other forms of internal sensing. In some aspects, this internal sensing can include diagnostic sensing, including diagnostic signals, which can be generated by diagnostic sensors, which can include strain gauges to sense vibration, sensors to sense humidity, and the like. Additionally, the diagnostic sensors can sense any environmental or device characteristic. In one aspect, the temperature sensor 610 can be placed in a lower position. Of course, other positions and arrangements of the temperature sensor 610 are also contemplated. In one aspect, a wire bond can be placed on the top pad next to the drain trace (e.g., next to the power device 302) for overcurrent measurement (also called desaturation protection in the case of IGBTs). Of course, other positions and arrangements of overcurrent measurement are also contemplated. In some aspects, an overcurrent sensor or desaturation sensor can sense the voltage drop determined by the connection to the drain of the power device 302. In some aspects, the current can also be sensed by the voltage drop across the power device 302.

This implementation of the signal loop or signal interconnect assembly 616 can ensure quality control and measurements across any combination of paralleled power devices 302 in the switch positions 104. Standard PCB board-to-board connectors allow easy connection to external gate drivers and control circuitry.

The gate distribution network can be implemented by a PCB as shown. It can also be formed as a thick film circuit, directly on the primary power substrate 630, directly on the base plate 602, or in other similar ways. This has the advantage of reducing the component count of the power module 100, and the option to print the gate resistors 820. Since solder terminals may not be required, the gate resistors 820 can be much smaller than the size of surface mount components on a PCB, and the gate resistors 820 can be actively cooled by a cold plate, which minimizes the thermal constraints of sizing this component.

Figure 20 illustrates an exemplary partial embodiment including a power module according to an aspect of the present disclosure. In this regard, Figure 20 is a representative exemplary structure for implementing the power module 100 of the present disclosure in a high performance system. This general approach is compatible with many other configurations and topologies and serves as a useful example of how to utilize the power module 100 in a converter. This particular example is for a three-phase motor drive. In this aspect, there are three power modules 100.

The disclosed power modules 100 can be configured as an array of half-bridge phase legs (three as shown). Additional power modules 100 can be included in parallel to increase current as required by the application.

20 may further include a cold plate 902. The cold plate 902 may be a high performance liquid cold plate, a heat sink, or the like that serves to transfer waste heat from the power module 100 to another source (liquid, air, etc.).

20 may further include a DC link capacitor 102. The DC link capacitor 102 may be implemented as a filtering capacitor that interfaces with a DC power source and the power module 100. In one aspect, the DC link capacitor 102 may be implemented as a single capacitor. In another aspect, the DC link capacitor 102 may be implemented as multiple components forming a "bank" of capacitors, depending on the power requirements of the load and/or the particular application.

20 embodiment may further include a cold plate standoff 904. The cold plate standoff 904 may provide structural support for the cold plate 902. The cold plate standoff 904 may be configured to elevate and position the terminals 106, 108 of the power module 100 to the same plane as the capacitor contacts 906 as shown. In this aspect, a flat busbar without bends may interconnect the components. The height of the cold plate standoff 904 may be adjusted to best utilize the available form factor for the converter elements for higher power density or for different types of capacitors. This may have a corresponding tradeoff of increasing the electrical loop length when transition bends may be required, and will depend on the system specific requirements.

21 shows an exemplary laminated busbar according to the present disclosure, FIG. 22 shows one portion of the exemplary laminated busbar according to FIG. 21, and FIG. 23 shows another portion of the exemplary laminated busbar according to FIG. 21. The power terminal layout can be designed to facilitate simple and effective busbar interconnection. To minimize the inductance between the DC link capacitor 102 of the power module 100 and the terminals 106, 108, the busbar 900 can have thick conductors 910, 912, and the thick conductors 910, 912 of the busbar 900 can overlap. The thick conductors 910, 912 can be separated by a thin dielectric film 914. Current flows in opposite directions through each sheet of the thick conductors 910, 912, which acts to significantly reduce the effective inductance between the power device 302 and the filtering DC link capacitor 102. The top layer of the thick conductor 910 can be embossed to form a coplanar contact 918 on the mating surface with the DC link capacitor 102, eliminating the need for washers or spacers that can impede electrical performance.

An exemplary laminated busbar 900 that aligns with the system level layout shown above can include one or more of a conductor V+ plane 912, a conductor V- plane 910, and a dielectric film 914.

The conductor V+ plane 912 can connect the V+ terminal 106 of the power module 100 through contact 926 to the V+ terminal of the DC link capacitor 102 through contact 928, and can further have a terminal 920 for external connection.

The conductor V-plane 910 can connect the V- terminal 108 of the power module 100 through contact 924 to the V- terminal of the DC link capacitor 102 through contact 918, and can further have a terminal 922 for external connection. The contacts 918, 924, 926, 928 and the terminals 920, 922 can each be implemented with fastener openings configured to receive fasteners to form an electrical connection. Other electrical connection implementations are also contemplated. The conductors 910, 912 can include openings 940. The openings 940 in one of the conductors 910, 912 allow access to the contacts of the other of the conductors 910, 912.

The dielectric film 914 may be implemented as a thin electrical insulator placed between the overlapping metal layers of the conductors 910, 912. The dielectric film 914 may provide dielectric insulation per electrical safety standards. The dielectric film 914 may be kept as thin as possible to minimize inductance. The film may cover all areas of the laminated busbar 900 that do not require electrical connection on the top and bottom surfaces. Depending on the geometry and available space, the edges 916 of the laminated busbar 900 may be sealed by a variety of methods including pinch seal lamination, epoxy seals, dielectric inserts, or the like. In some aspects, the material of the dielectric film 914 may be bonded to the laminated busbar 900 by an acrylic adhesive. In some aspects, the laminated busbar 900 may include a pinch seal with a polymeric material. In some aspects, the laminated busbar 900 may then be subjected to pressure, heat, and time to form a laminate.

In some aspects, the bus bar 900 and the conductors 910, 912 have a generally flat structure. More specifically, as shown in FIG. 15, the bus bar 900 can have a generally flat top surface and a generally flat bottom surface. In some aspects, the thickness of one of the conductors 910, 912, together with the dielectric film 914, defines the offset distance 702 shown in FIG. 13. In one aspect, the combined thickness of one of the conductors 910, 912 and the dielectric film 914 can be 0.5 mm to 10 mm, which corresponds to the offset distance 702. In one aspect, the combined thickness of one of the conductors 910, 912 and the dielectric film 914 can be 1 mm to 2 mm, which corresponds to the offset distance 702. In one aspect, the combined thickness of one of the conductors 910, 912 and the dielectric film 914 can be 0.5 mm to 1 mm, which corresponds to the offset distance 702. In one aspect, the combined thickness of one of the conductors 910, 912 and the dielectric film 914 can be 2 mm to 3 mm, which corresponds to the offset distance 702. In one aspect, the combined thickness of one of the conductors 910, 912 and the dielectric film 914 can be 3 mm to 4 mm, which corresponds to the offset distance 702. In one aspect, the combined thickness of one of the conductors 910, 912 and the dielectric film 914 can be 4 mm to 5 mm, which corresponds to the offset distance 702. In one aspect, the combined thickness of one of the conductors 910, 912 and the dielectric film 914 can be 5 mm to 6 mm, which corresponds to the offset distance 702. In one aspect, the combined thickness of one of the conductors 910, 912 and the dielectric film 914 can be 6 mm to 7 mm, which corresponds to the offset distance 702. In one aspect, the combined thickness of one of the conductors 910, 912 and the dielectric film 914 can be 7 mm to 8 mm, which corresponds to the offset distance 702. In one aspect, the combined thickness of one of the conductors 910, 912 and the dielectric film 914 can be 8 mm to 9 mm, which corresponds to the offset distance 702. In one aspect, the combined thickness of one of the conductors 910, 912 and the dielectric film 914 can be 9 mm to 10 mm, which corresponds to the offset distance 702.

FIG. 24 illustrates a phase output busbar according to the present disclosure. For a three-phase motor drive such as this example, the phase output 930 may not require stacking or overlapping to minimize inductance. This is because the phase output busbar 930 is driving an inductive load, which limits the need to reduce inductance on the output path. Thus, the phase output busbar 930 may be a stand-alone element and much less complex than the structure of a laminated DC link. The phase output busbar 930 may include openings 934 for receiving fasteners to form an electrical connection.

It is highly desirable to measure the output current from each phase. This can be done in a number of ways, such as adding a low resistance series resistor (called a shunt) and measuring the voltage drop across it, including a sensor that measures the magnetic field generated by the current and provides a proportional signal to the controller, or other similar methods. Figure 24 shows one output busbar 930 for this system, and a configuration for adding a ferrous shield 932 to improve the accuracy of the measurement by concentrating the magnetic field in the area where the sensor may be located.

The phase output busbars 930 or conductors may be configured to provide a transition from the phase output terminals 110 of the respective power modules 100 to external terminal connections. The form and arrangement of the phase output busbars 930 or conductors may vary and may depend on the particular topology or arrangement of the power modules 100.

The ferrous shield 932 or magnetic field concentrator may be configured to concentrate the magnetic field generated by the current flow to a target area where the sensor may be located. While this may not be necessary for operation, it is a highly advantageous arrangement for extracting output current measurements in most converter systems.

25 shows a perspective view of an exemplary embodiment including a power module and a laminated busbar according to aspects of the present disclosure, FIG. 26 shows a first cross-sectional view of an exemplary embodiment including a power module and a laminated busbar according to FIG. 25, and FIG. 27 shows a second cross-sectional view of an exemplary embodiment including a power module and a laminated busbar according to FIG. 25. FIGS. 25-27 show a motor drive system layout including the laminated busbar 900 structure described above. As shown in FIGS. 25-27, the system can include a power module 100 array, a cold plate 902 assembly, a DC link capacitor 102, a DC link laminated busbar 900 assembly, and an output contact busbar 930.

A cross-sectional view of the DC link capacitor terminals is shown in FIG. 26. FIG. 26 shows the embossed coplanar connections 918 implemented in the busbar 900 and the high degree of metal lamination in all locations where feasible. The only separation between the plates 910, 912 may be the minimum area required for the sheet metal manufacturing process (embossing tooling, workholding, tolerances, etc.) and the dielectric isolation 914 (edge seal, creepage, clearance).

The cross section of the power module 100 shown in FIG. 27 shows overlapping optimized critical loops from the bank of DC link capacitors 102 to the terminals 106, 108 of the power module 100. This reinforces the ideas discussed in FIG. 15 with actual representative components and physical design constraints.

Collectively, this low inductance, high current interconnect structure may be necessary for, and may be enabled by, the disclosed power module design. Collectively, they form an effective, highly integrated, low inductance path between the bank of DC link capacitors 102 and the switch locations 104. This structure enables efficient, stable, very high frequency switching of power devices 302, such as wide bandgap semiconductors.

FIG. 28 illustrates an exemplary single module gate driver according to the present disclosure. The gate driver acts as a power amplifier delivering drive current to the switch positions 104 while providing voltage isolation between the controller and the high voltage power stage. Isolation between the driver blocks between the switch positions 104 can also be maintained. For high frequency switching, the output stage of the driver can be physically located close to the switch positions 104.

Additional features can be included for safety, such as under-voltage, over-voltage and over-current protection. The gate driver circuitry can be configured to ensure that the power module 100 is always functioning within its safe operating area, and in the event of a fault, the gate driver circuitry will carefully shut down.

This power module design allows the gate drivers to be seated directly on top of the stacked power bussing 900. The gate drivers can be formed as a single PCB and can be racked up or scaled in the same modular fashion as the power modules 100. Alternatively, the drivers can be integrated onto a single PCB across an array of power modules 100. This saves size but increases complexity due to the large number of high voltage nodes on the board. The driver output stage can be placed directly next to the board-to-board connector and in contact with the module signal pins.

An exemplary single module gate driver 400 is shown in FIG. 28. Elements of the single module gate driver 400 can be duplicated for each switch position 104. The placement and specific layout of each block can be system dependent, and they are shown in this figure as a generalized example.

The elements of the single module gate driver 400 may include one or more of a control signal connector 410, an isolated power supply 420, signal isolation and conditioning components 430, an amplifier stage 440, bulk gate resistors and local current filters 450, sensors and protection components 460, a power module signal connector 470, and a creepage extension slot 480. The single module gate driver 400 may be disposed on a printed circuit board (PCB 402).

The control signal connector 410 can be configured to interface with the controller and gate driver in a manner that allows differential control and sensor signals to be transferred between the controller and gate driver via a cable, board-to-board connector, or similar mechanism.

The separated power supply 420 can be implemented as a DC-DC converter that provides the positive and negative voltages required to turn on and off the power devices 302. The separated power supply 420 can be high enough power to provide the current required by the power devices 302. Isolation between the control stage and the power stage can be a critical function of this block.

The signal isolation and conditioning components 430 may include circuitry for providing isolation of the control signals between the low voltage control and the high voltage power, and for conditioning the control signals to the driver amplifier stage 440.

The amplifier stage 440 can be formed of discrete or integrated components. The amplifier stage 440 can convert the isolated low power control signal into the current and voltage required for the switch position 104 to operate. For clean switching, the amplifier stage 440 should be as physically close as possible to the module signal terminals.

The bulk gate resistor and local current filter 450 can be the final stage before the transition to the output pin, the bulk gate resistor and local current filter 450 can be used to adjust the turn-on and turn-off times of the switch position 104 to match the needs of a particular system. The bulk gate resistor and local current filter 450 can be part of a single set or network of passive elements with different resistance values for turn-on and turn-off if different switching characteristics are desired. A local filter can also be used to ensure that the quality of the current source is maintained during switching events.

The sensor and protection components 460 can include circuitry that can include under-voltage and over-voltage protection, over-current protection, temperature sensing, and mechanisms for safe shutdown in the event of a fault.

The power module signal connector 470 may be located on the underside of the PCB 402. The power module signal connector 470 may interface the gate drivers with the power module 100 and may provide a direct connection to the gate distribution network internal to the power module 100. This connection may typically be facilitated by a board-to-board connector, a direct solder connection, or the like. A wire-to-board connection is also possible, but may require the drivers to be physically close to the power module 100.

The creepage extension slots 480 can be configured to improve voltage isolation between driver stages and allow for more compact packing of components. As high voltage power modules continue to shrink in size, voltage isolation is an issue of increasing importance. Cutting slots into the PCB 402 can be one option to increase voltage creepage without adding board size. Other options include performing local potting of critical nodes and completely covering the entire assembly with a conformal dielectric coating. More specifically, the various components of the power module 100, including the PCB 402, can include individual and/or local potting of one or more components, and the various components of the power module 100, including the PCB 402, can include a conformal dielectric coating on one or more components, the entire PCB 402, and/or other assemblies of the power module 100.

When integrated together as shown in FIG. 29, the gate driver 400 and power module 100 form a compact single unit in which an optimized low inductance signal flow from a controlled source passes through isolation, is amplified, and then distributed through a gate resistor network directly to the gates of the paralleled power devices 302.

30 shows current sensing components according to an aspect of the disclosure, and FIG. 31 shows current sensing components according to FIG. 30 arranged with a phase output busbar. There are many ways to sense current. In one aspect of the disclosure shown in FIGS. 30 and 31, a sensor 980 such as a non-contact magnetic sensor can be utilized. The sensor 980 can be utilized with a ferrous shield 932 to focus the magnetic field. The sensor 980 can utilize a small sensor chip placed in this area that generates a signal proportional to the output current. FIG. 30 shows an example of sensors on a single PCB 936 for all three phases, and FIG. 31 shows the complete output busbar structure with magnetic shielding.

FIG. 32 illustrates an exemplary three-phase motor drive power stack-up according to one aspect of the present disclosure. Specifically, FIG. 32 illustrates an exemplary three-phase motor drive power stack-up including all the functional components previously described. The system of FIG. 32 is highly integrated and fully optimized for peak electrical performance. Additional features such as capacitor bank voltage sensing and EMI shielding enclosure are contemplated and would be well integrated within this high performance core.

FIG. 33 is a schematic diagram of multiple power devices in parallel according to aspects of the present disclosure. Specifically, FIG. 33 shows four power devices 302. This number of power devices 302 is merely an example and is for ease of explanation and understanding. The power module 100 of the present disclosure may include any number of power devices 302.

The gate control and sense signals are significant contributors to the switching performance of the power module 100 and can be especially important in the paralleled switch positions 104. The signal loops in the power module 100 can be optimized for high performance, robustness and uniform current distribution. In some embodiments, multi-layer printed circuit boards (PCBs) can be utilized for this signal loop. In these embodiments, parallel planes can be used for flux cancellation and further reduction in inductance. Thus, these wide and short paths can be folded back to cancel the magnetic field. This helps provide the best signal loop possible given the geometry constraints of the power module 100. As with the power loops, the paths can be configured to be limited in length, cross-sectional width, and associated external components can be placed as physically close as possible to the signal terminals 502, 504.

For a paralleled array of power devices 302, such as transistors, particularly MOSFETs, the timing and magnitude of the gate currents must be balanced to match turn-on and turn-off conditions. The power module 100 can utilize individual ballasting resistors 820 (R _G1 , R _G2 , R _G3 , R _G4 ) that can be placed in close proximity to the gates of the power devices 302 and only separated by gate wire bonds. The individual ballasting resistors 820 (R _G1 , R _G2 , R _G3 , R _G4 ) can have low resistance and help buffer the current flowing to each individual power device 302. The individual ballasting resistors 820 (R _G1 , R _G2 , R _G3 , R _G4 ) serve to decouple the gates of the power devices 302, preventing oscillations and helping to ensure equalized turn-on signals for the paralleled power devices 302. A single external resistor R _DRIVER may be utilized and connected to these paralleled resistors 820 (R _G1 , R _G2 , R _G3 , R _G4 ) to control the turn-on speed of the effective switch positions 104. In one aspect, a ballasting resistor 820 may be associated with each power device 302. In one aspect, an individual ballasting resistor 820 may be associated with each individual power device 302.

In an additional aspect, the power module 100 can utilize individual ballasting source Kelvin resistors 822 (R _S1 , R _S2 , R _S3 , R _S4 ) that can be placed in close proximity to the source Kelvin connections of the power devices 302. In one aspect, the source Kelvin resistors 822 (R _S1 , R _S2 , R _S3 , R _S4 ) can only be separated by source Kelvin wire bonds. In one aspect, a source Kelvin resistor 822 can be associated with each power device 302. In one aspect, an individual source Kelvin resistor 822 can be associated with each individual power device 302. The source Kelvin resistors 822 (R _S1 , R _S2 , R _S3 , R _S4 ) can have low resistance and can help buffer the current flowing to the source Kelvin connection of each individual power device 302. The source Kelvin resistors 822 (R _S1 , R _S2 , R _S3 , R _S4 ) can serve to decouple the source Kelvin connections of the power devices 302 and can help prevent oscillations and ensure equalized signals to the paralleled power devices 302. In certain aspects, the source Kelvin resistors 822 (R _S1 , R _S2 , R _S3 , R _S4 ) can be configured and implemented to account for mismatch of the individual power devices 302, layout of the individual power devices 302, and the like.

In certain aspects, the source Kelvin resistors 822 (R S1 , R S2 , R S3 , R S4 ) can be configured and implemented to prevent or reduce feedback oscillations between the individual power devices 302, to dampen feedback oscillations between the individual power devices 302, to decouple the source Kelvin signals between the individual power devices 302, to block current flowing between the source Kelvin signals of the individual power devices 302, to equalize current flowing between the source Kelvin signals of _the individual power devices 302, to force current through _{the individual power devices 302 to flow through current paths, and the like. Additionally, the source Kelvin resistors 822 (R S1 , R S2 , R S3 , R S4 )} can reduce signaling inductance, ensure that gate operation of the power devices 302 is not slowed down, minimize gate/ _source overvoltages of the power devices 302, and the like.

Depending on the application, the source Kelvin resistor 822 (R _S1 , R _S2 , R _S3 , R _S4 ) may be a surface mount package, an integrated thick film layer, a printed thick film, a wire bondable chip, a "natural" resistance path (a material/structure interface that inherently adds resistance), or the like. In one or more aspects, the resistance values of the source Kelvin resistor 822 (R _S1 , R _S2 , R _S3 , R _S4 ) and resistor 820 (R _G1 , R _G2 , R _G3 , R _G4 ) may be equivalent. In one or more aspects, the resistance values of the source Kelvin resistor 822 (R _S1 , R _S2 , R _S3 , R _S4 ) and resistor 820 (R _G1 , R _G2 , R _G3 , R _G4 ) may be different. In one or more aspects, the resistance value of the source Kelvin resistor 822 (R _S1 , R _S2 , R _S3 , R _S4 ) may range from 0.5 ohms to 1.5 ohms. In one or more aspects, the resistance value of the source Kelvin resistor 822 (R _S1 , R _S2 , R _S3 , R _S4 ) may range from 0.5 ohms to 2 ohms. In one or more aspects, the resistance value of the source Kelvin resistor 822 (R _S1 , R _S2 , R _S3 , R _S4 ) may range from 0.5 ohms to 5 ohms. In one or more aspects, the resistance value of the source Kelvin resistor 822 (R _S1 , R _S2 , R _S3 , R _S4 ) may range from 0.5 ohms to 20 ohms. In one or more aspects, the resistance of resistor 820 (R _G1 , R _G2 , R _G3 , R _G4 ) can range from 1 ohm to 20 ohms. In one or more aspects, the resistance of resistor 820 (R _G1 , R _G2 , R _G3 , R _G4 ) can range from 1 ohm to 5 ohms. In one or more aspects, the resistance of resistor 820 (R _G1 , R _G2 , R _G3 , R _G4 ) can range from 1 ohm to 10 ohms. In one or more aspects, the resistance of resistor 820 (R _G1 , R _G2 , R _G3 , R _G4 ) can range from 1.5 ohms to 6 ohms.

FIG. 34 illustrates a top view of an effective gate switching loop and power module according to one aspect of the disclosure. Specifically, FIG. 34 illustrates that a signal board or signal interconnect assembly 616 can have rails 816, 818 that connect to gate and source Kelvin connector terminals 502, 504 at the board edge of the signal interconnect assembly 616. The rails 818 can connect to gate wire bond pads through individual gate resistors 820 (resistors R _G1 , R _G2 , . . . R _GN ), and the rails 816 can connect to source pads of the power devices 302 through individual resistors 822 (resistors R _S1 , R _S2 , R _S3 , . . . R _SN ). This can be considered a true Kelvin connection since the source Kelvin bond is not in the current path of the power source bond. The Kelvin connection can be important for clean and efficient control and can reduce the effect of high drain-source currents on the signal loop.

34 further illustrates optional signal connections 506, 508 on the signal interconnect assembly 616. The connections 506, 508 can be used for temperature measurements or other forms of internal sensing. In some aspects, this internal sensing can include diagnostic sensing, including diagnostic signals, which can be generated by diagnostic sensors, which can include strain gauges that sense vibrations, sensors that sense humidity, and the like. Additionally, the diagnostic sensors can sense any environmental or device characteristic.

In one aspect, the sensor can be a temperature sensor 610, which can be placed on the power substrate 606 or on the base plate 602. In one aspect, the power substrate 606 or base plate 602 can have a metallic and/or conductive surface that supports the power device 302. In one aspect, the portion 850 of the surface of the power substrate 606 or base plate 602 can be a different portion from the surface that supports the power device 302. In one aspect, the portion 850 can be a portion where the metallic and/or conductive surface has been removed, where the metallic and/or conductive surface has been etched, where there is no metallic and/or conductive surface, or other similar portion. In one aspect, the temperature sensor 610 can be placed in an area on the power substrate 606 or base plate 602 where the metallic surface of the power substrate 606 or base plate 602 has been removed or where there is no metallic surface of the power substrate 606 or base plate 602. In these aspects, the temperature sensor 610 can be separated and can provide a more accurate temperature reading. Of course, other locations and arrangements of the temperature sensor 610 are also contemplated.

This implementation of the signal loop or signal interconnect assembly 616 can ensure quality control and measurements across any combination of paralleled power devices 302 in the switch positions 104. Standard PCB board-to-board connectors allow easy connection to external gate drivers and control circuitry.

The gate distribution network can be implemented by a PCB as shown. The gate distribution network can also be formed as a thick film circuit directly on the primary power substrate 630, directly on the base plate 602, or in other similar manners. This has the advantage of reducing the component count of the power module 100, and the option to print the resistors 820, 822. In aspects, thick film metal implementations or deposited and patterned metal implementations can be utilized on the housing sidewalls 612 and/or the housing lid 618 itself. Since solder terminals may not be required, the resistors 820, 822 can be much smaller than the size of surface mount components on a PCB, and the resistors 820, 822 can be actively cooled by a cold plate, which minimizes the thermal constraints of sizing this component.

35 is a perspective view of a configuration including a power module and a housing according to one embodiment of the present disclosure, FIG. 36 is a side view of the configuration of FIG. 35, FIG. 37 is a partial perspective view of the configuration of FIG. 35, FIG. 38 is another partial perspective view of the configuration of FIG. 35, FIG. 39 is another partial perspective view of the configuration of FIG. 35, FIG. 40 is another partial perspective view of the configuration of FIG. 35, and FIG. 41 is another partial perspective view of the configuration of FIG. 35.

Specifically, Figures 35-40 show a configuration 3500 that can be utilized to implement one or more of the power modules 100, bus bars 900, drivers 400, controllers of the power modules 100 and drivers 400, capacitors 102, sensors 980, and the like. In one aspect, the configuration 3500 can utilize one or more of the power modules 100, bus bars 900, drivers 400, controllers of the power modules 100 and drivers 400, capacitors 102, sensors 980, and the like described herein. In one aspect, the configuration 3500 can utilize one or more other types of power modules, bus bars, drivers, controllers of the power modules and drivers, capacitors, sensors, and the like.

In one aspect, the arrangement 3500 can be implemented in a wide variety of power topologies, including half-bridge, full-bridge, three-phase, booster, chopper, DC-DC converter, and similar arrangements and/or topologies. In the aspect illustrated in Figures 35-40, the arrangement 3500 is shown as implementing a three-phase topology.

With particular reference to FIG. 35, the construct 3500 can include a housing 3502. The housing 3502 can include a top portion 3504, a middle portion 3506, and a bottom portion 3508. However, the housing 3502 can be implemented with fewer or more housing portions. In one aspect, the housing 3502 can be constructed of a synthetic material, a plastic material, a metallic material, or the like. In one aspect, the housing 3502 can be constructed of a plastic material. In one aspect, the housing 3502 can be constructed of an injection molded plastic material.

35, in one aspect, the top 3504 can be mechanically secured to the construct 3500 using mechanical fasteners 3512. In other aspects, other assemblies and/or configurations can be utilized to secure the top 3504 to the construct 3500. In one aspect, the top 3504 can include cooling slots 3510 that allow air within the construct 3500 to flow through the construct 3500 for cooling purposes.

35, in one aspect, a central portion 3506 can be disposed between the top portion 3504 and the bottom portion 3508. The bottom portion 3508 can be configured to receive the top portion 3504 and the central portion 3506 to provide housing for the various components of the configuration 3500. In one aspect, the central portion 3506 and/or the bottom portion 3508 can be further configured to allow the phase output 930 to extend through the central portion 3506 and/or the bottom portion 3508. In other aspects implementing other topologies, the central portion 3506 and/or the bottom portion 3508 can be further configured to allow other types of outputs to extend through the central portion 3506 and/or the bottom portion 3508.

With further reference to FIG. 35, in one aspect, the bottom portion 3508 can support the center portion 3506. In one aspect, the bottom portion 3508 can include supports 3514 for supporting the phase outputs 930. In another aspect, the bottom portion 3508 can include supports 3514 for supporting other types of outputs when implementing other topologies.

In one or more aspects, the bottom 3508 can further include an opening 3528 configured to allow a fluid connection tube 3516 to the cold plate 902 to extend therethrough. In one aspect, the fluid connection tube 3516 can receive a fluid source and/or deliver fluid for cooling purposes associated with the cold plate 902.

Referring to FIG. 36, in one aspect, the configuration 3500 can include conductors 910, 912. In one aspect, the conductors 910, 912 can be located on the opposite side of the configuration 3500 from the phase output 930. In one aspect, the conductors 910, 912 can be located on the opposite side of the configuration 3500 from other types of outputs for other types of topologies.

In one aspect, the configuration 3500 can include a cooling fan 3518. The cooling fan 3518 can be configured to move air through the housing 3502 of the configuration 3500 to cool various components of the configuration 3500. In one aspect, the cooling fan 3518 can be positioned in an opening in a side of the configuration 3500 such that the cooling fan 3518 moves air through the opening, which in turn moves air through the cooling slots 3510 shown in FIG. 35.

In one aspect, the configuration 3500 can include an electrical interface 3520. In one aspect, the electrical interface 3520 can connect to and exchange data with one or more of the power module 100, the bus bar 900, the driver 400, the controller of the power module 100 and the driver 400, the capacitor 102, the sensor 980, and the like. In one aspect, this data can be control signals, sensor signals, drive signals, signals for loading, removing or changing software, and the like. In one aspect, instead or in addition, the electrical interface 3520 (or other connectors along this wall) can provide low voltage (12-24V) power to the controller and driver 400. In certain aspects, the configuration 3500 can be configured to be connected to a power source at conductors 910, 912, operated, controlled and analyzed entirely through the electrical interface 3520, and provide an output at phase output 930.

Referring to FIG. 37, the construct 3500 is shown with the top portion 3504 removed for ease of illustration and understanding. In one aspect, as shown by FIG. 37, the center portion 3506 can include a portion 3526 for receiving a mechanical fastener 3512. FIG. 37 further shows a controller 3522, a driver 400, and a wired connection 3524 between the controller 3522 and the driver 400.

Referring to FIG. 38, the configuration 3500 is shown with the controller 3522, driver 400, and wired connections 3524 removed from the central portion 3506 for ease of illustration and understanding. Specifically, FIG. 38 shows the surfaces for supporting the controller 3522, driver 400, wired connections 3524, and the like.

FIG. 39 shows the structure 3500 with the center portion 3506 removed for ease of explanation and understanding. Specifically, FIG. 39 shows the arrangement and configuration of the bus bar 900, the power module 100, the cold plate 902, and the sensor 980. Specifically, FIG. 39 shows the arrangement and configuration of the bus bar 900, the power module 100, the cold plate 902, and the sensor 980 supported by the bottom portion 3508.

Figure 40 shows the configuration 3500 with the center section 3506 and busbars 900 removed for ease of explanation and understanding. As shown in Figure 40, the arrangement of the power modules 100, cold plates 902 and sensors 980 of the configuration 3500 is shown. Specifically, Figure 40 shows components 3530 for ensuring attachment of the input and output connections to the phase outputs 930 and conductors 910. In one aspect, the components 3530 for ensuring attachment can be mechanical fasteners. In one aspect, the mechanical fasteners can be female threaded components configured to receive corresponding male threaded components. In one aspect, the mechanical fasteners can be hex nuts.

41 shows the structure 3500 with the center portion 3506, busbars 900, power modules 100, cold plates 902 and sensors 980 removed for ease of explanation and understanding. As shown in FIG. 41, the bottom portion 3508 of the structure 3500 can include a structure 3540 for connecting to the center portion 3506. As shown in FIG. 41, the bottom portion 3508 of the structure 3500 can include a structure 3542 for holding at least the power modules 100 and the cold plates 902. As shown in FIG. 41, the bottom portion 3508 of the structure 3500 can include a structure 3544 for holding at least the capacitors 102. In some aspects, the structure can be a rib, a reinforcement portion, a mechanical fastener receiving portion, and the like.

In one aspect, the configuration 3500 can be implemented as an evaluation system, evaluation kit, test system, or the like. For the sake of brevity, this embodiment is broadly defined as an evaluation kit. In a particular aspect, an evaluation kit embodiment of the configuration 3500 can be configured to be connected to a power source at the conductors 910, 912, fully operated, controlled and analyzed through the electrical interface 3520, and provide an output from the phase output 930. In this regard, a user can implement an evaluation kit embodiment of the configuration 3500 to perform testing, mockups, and the like before implementing and manufacturing a system that implements the power module 100 of the present disclosure. In one aspect, a user can implement an evaluation kit embodiment of the configuration 3500 to perform testing, mockups, and the like for a particular application of the power module 100. In one aspect, the application may be power systems, motor systems, automotive motor systems, charging systems, automotive charging systems, vehicle systems, industrial motor drives, embedded motor drives, uninterruptible power supplies, AC-DC power supplies, welding machine power supplies, military systems, inverters, inverters for wind turbines, for solar power panels, for tidal power plants, and for electric vehicles (EVs), converters, and the like.

FIG. 42 illustrates a method of implementing and operating an arrangement including a power module. Specifically, FIG. 42 illustrates a method 4200 of implementing and operating the arrangement. In one aspect, the arrangement 3500 disclosed herein can be utilized to implement the method 4200.

As shown in box 4202, the method 4200 may further include assembling the power module 100 and associated components in a housing 3502 to form a configuration 3500. In one aspect, the configuration 3500 may be assembled to include one or more of the power module 100, busbar 900, driver 400, controller of the power module 100 and driver 400, capacitor 102, sensor 980, and the like. In one aspect, the configuration 3500 may be assembled using one or more of the power module 100, busbar 900, driver 400, controller of the power module 100 and driver 400, capacitor 102, sensor 980, and the like described herein. In one aspect, the configuration 3500 may be assembled to include one or more other types of power modules, busbars, drivers, controller of the power module and driver, capacitors, sensors, and the like.

The method 4200 may further include connecting 4204 the configuration to a power source. In one aspect, the conductors 910, 912 of the configuration 3500 may be connected to a power source. In one aspect, the conductors 910, 912 of the configuration 3500 may be connected to a DC power source.

The method 4200 may further include operating 4206 the component 3500. In one aspect, the component 3500 may be operated such that one or more of the power module 100, the bus bar 900, the driver 400, the controller of the power module 100 and the driver 400, the capacitor 102, the sensor 980, and the like provide an output. In one aspect, the component 3500 may be programmed to perform the aspects of operating 4206 the component 3500. In one aspect, the controller of the component 3500 may be programmed to perform the aspects of operating the component 3500. In one aspect, the driver 400 of the component 3500 may be programmed to perform the aspects of operating the component 3500.

The method 4200 may further include measuring 4208 various operating parameters of the structure 3500, including the power module 100 and associated components. In one aspect, the structure 3500 may be operated such that various internal sensors output sensor data. In one aspect, the structure 3500 may be operated and connected to external sensors, such as an oscilloscope, a computer system, and the like, that output the sensor data. In one aspect, these various sensor data may be collected by a computer system. The computer system may include a processor, memory, an operating system, and the like. In one or more aspects, the output sensor data may be based on and/or may include switching losses, temperature, inductance, switching speed, overshoot, waveform analysis, and the like, associated with the power module 100 or other components implemented by the structure 3500. In one aspect, measuring 4208 various operating parameters of the arrangement 3500 may be related to a particular application of the power module 100. In one aspect, the application may be a power system, a motor system, an automotive motor system, a charging system, an automotive charging system, a vehicle system, an industrial motor drive, an embedded motor drive, an uninterruptible power supply, an AC-DC power supply, a welding machine power supply, a military system, an inverter, a converter for a wind turbine, for a solar power panel, for a tidal power plant, and for an electric vehicle (EV), and the like.

The method 4200 may further include outputting 4210 these operating parameters to a human-machine interface. In one aspect, these operating parameters may be analyzed by a computer system. In one aspect, the computer system may analyze the operating parameters, including the sensor data, to generate an output. In one aspect, the output may be provided to a human-machine interface. In one aspect, the human-machine interface may include one or more of a display device, a printout, an analysis file, and the like.

Method 4200 may further include modifying aspects of the configuration and repeating 4212 method 4200. In one aspect, configuration 3500 may be modified to include additional components consistent with the present disclosure. In one aspect, configuration 3500 may be modified to include fewer components consistent with the present disclosure. In one aspect, the controller program of configuration 3500 may be modified. In one aspect, the driver 400 program of configuration 3500 may be modified. In one aspect, the operating voltage or current of configuration 3500 may be modified.

In one or more aspects, the power module 100 of the present disclosure can be configured to operate with various performance characteristics. However, these performance characteristics are not necessarily limited to the specific embodiments and aspects described in this disclosure. Below, these various performance characteristics are described along with exemplary details of exemplary structures and embodiments that can provide, in part, these performance characteristics. However, these various performance characteristics should not be limited to the specific disclosed embodiments of the power module 100. In certain aspects, these various performance characteristics and exemplary structure embodiments may relate to low voltage embodiments. In one aspect, low voltage embodiments can be defined to include embodiments that operate at voltages lower than 3.4 Kv. In one aspect, low voltage embodiments can be defined to include embodiments that operate at voltages lower than 3.3 Kv. In one aspect, low voltage embodiments can be defined to include embodiments that operate at voltages lower than 3.0 Kv. In one aspect, low voltage implementations include implementations operating in the ranges of 100v to 3400v, 100v to 3300v, 100v to 3000v, 100v to 2500v, 100v to 2000v, and 100v to 1700v. In one aspect, high voltage implementations may be defined to include implementations operating at voltages greater than 3.4Kv. In one aspect, high voltage implementations may be defined to include implementations operating at voltages greater than 3.3Kv. In one aspect, high voltage implementations may be defined to include implementations operating at voltages greater than 3.0Kv. In one aspect, high voltage implementations include implementations operating in the ranges of 3400v to 5000v, 3300v to 5000v, 3000v to 5000v, 3400v to 10000v, 3300v to 10000v, 3000v to 10000v. In this regard, aspects of the present disclosure embodying low voltage implementations as defined herein can be distinguished from the high voltage implementations as defined herein. For example, in some aspects, low voltage implementations can be distinguished from high voltage implementations based on one or more of the following: spacing between conductors and/or terminals of the power module 100, the configuration of the power loops within the power module 100, the basic layout of the power module 100, the current carrying capacity and/or current carrying capability of the power module 100, the board thickness of the power module 100, the terminal layout of the power module 100, the thermal performance of the power module 100, the configuration of the power module 100 to address creepage issues, the configuration of the power module 100 to address clearance issues, the insulation configuration of the power module 100, the bus bar configuration of the power module 100, and/or the like. In this regard, at least one or more of the above aspects can distinguish low voltage implementations from high voltage implementations.

In one or more aspects, the power module 100 of the present disclosure can be configured to operate with the following parasitic stray inductances: In one aspect, the total stray inductance value of the critical power switches in the loop 114 shown in FIG. 1B of the power module 100 can be less than 12 (nH). In one aspect, the total stray inductance value of the critical power switches in the loop 114 shown in FIG. 1B of the power module 100 can be less than 11 (nH). In one aspect, the total stray inductance value of the critical power switches in the loop 114 shown in FIG. 1B of the power module 100 can be less than 7 (nH). In one aspect, the total stray inductance value of the critical power switches in the loop 114 shown in FIG. 1B of the power module 100 can be less than 4 (nH). In one aspect, the total stray inductance value of the critical power switches in the loop 114 shown in FIG. 1B of the power module 100 can be less than 3 (nH).

In one aspect, the total stray inductance value of the critical power switches in the loop 114 shown in FIG. 1B of the power module 100 can have a range of 12 (nH) to 2 (nH), 10 (nH) to 2 (nH), and 4 (nH) to 2 (nH).

In one aspect, for a power module 100 having a particular loop length and/or cross-sectional area, the total stray inductance value of the critical power switches in the loop 114 shown in FIG. 1B of the power module 100 can be less than 4 (nH). In one aspect, for a power module 100 having a particular loop length and/or cross-sectional area, the total stray inductance value of the critical power switches in the loop 114 shown in FIG. 1B of the power module 100 can be less than 8 (nH). In one aspect, for a power module 100 having a particular loop length and/or cross-sectional area, the total stray inductance value of the critical power switches in the loop 114 shown in FIG. 1B of the power module 100 can be less than 12 (nH). In one aspect, for a power module 100 having a particular loop length and/or cross-sectional area, the total stray inductance value of the critical power switches in the loop 114 shown in FIG. 1B of the power module 100 can have a range of 4 (nH) to 2 (nH). In one aspect, for a power module 100 having a particular loop length and/or cross-sectional area, the total stray inductance value of the critical power switches in the loop 114 shown in FIG. 1B of the power module 100 can range from 8 (nH) to 4 (nH). In one aspect, for a power module 100 having a particular loop length and/or cross-sectional area, the total stray inductance value of the critical power switches in the loop 114 shown in FIG. 1B of the power module 100 can range from 12 (nH) to 8 (nH).

In one or more aspects, the power module 100 of the present disclosure can be configured to operate at the following switching speeds:

In one embodiment, the switching speed of the power module 100 can be less than 100 (A/ns) di/dt. In one embodiment, the switching speed of the power module 100 can be less than 90 (A/ns) di/dt. In one embodiment, the switching speed of the power module 100 can be less than 80 (A/ns) di/dt. In one embodiment, the switching speed of the power module 100 can be less than 50 (A/ns) di/dt. In one embodiment, the switching speed of the power module 100 can be less than 35 (A/ns) di/dt.

In one aspect, the switching speed of the power module 100 can have a range of 30 to 100 (A/ns) di/dt. In one aspect, the switching speed of the power module 100 can have a range of 30 to 70 (A/ns) di/dt. In one aspect, the switching speed of the power module 100 can have a range of 40 to 90 (A/ns) di/dt. In one aspect, the switching speed of the power module 100 can have a range of 30 to 40 (A/ns) di/dt.

In one aspect, the switching speed of the power module 100 can be less than 120 (V/ns) dv/dt. In one aspect, the switching speed of the power module 100 can be less than 100 (V/ns) dv/dt. In one aspect, the switching speed of the power module 100 can have a range of 20 (V/ns) dv/dt to 100 (V/ns) dv/dt. In one aspect, the switching speed of the power module 100 can have a range of 40 (V/ns) dv/dt to 100 (V/ns) dv/dt. In one aspect, the switching speed of the power module 100 can have a range of 60 (V/ns) dv/dt to 100 (V/ns) dv/dt. In one aspect, the switching speed of the power module 100 can have a range of 80 (V/ns) dv/dt to 100 (V/ns) dv/dt. In one aspect, the switching speed of the power module 100 can have a range of 60 (V/ns) dv/dt to 80 (V/ns) dv/dt. In one aspect, the switching speed of the power module 100 can have a range of 40 (V/ns) dv/dt to 60 (V/ns) dv/dt. In one aspect, the switching speed of the power module 100 can have a range of 20 (V/ns) dv/dt to 40 (V/ns) dv/dt. In one embodiment, the switching speed of the power module 100 can range from 60 (V/ns) to 80 (V/ns), 40 (V/ns) to 60 (V/ns), or 20 (V/ns) to 40 (V/ns).

In one or more aspects, the power module 100 of the present disclosure can be configured to operate with the following switching losses:

In one aspect, the switching loss of the power module 100 can be less than 0.5 (mJ/A) millijoules per amp. In one aspect, the switching loss of the power module 100 can be less than 0.4 (mJ/A) millijoules per amp. In one aspect, the switching loss of the power module 100 can be less than 0.25 (mJ/A) millijoules per amp. In one aspect, the switching loss of the power module 100 can have a range of 0.5 (mJ/A) millijoules per amp to 0.25 (mJ/A). In one aspect, the switching loss of the power module 100 can have a range of 0.25 (mJ/A) millijoules per amp to 0.4 (mJ/A) millijoules per amp.

In aspects of the present disclosure, the width and length of the power module 100 may be scalable such that the power module 100 may be configured to have a larger width (more power devices 302, smaller inductance) or a smaller size (smaller size, lower cost). The table below shows various range embodiments, including a practical minimum width and an expected maximum size (approximately a square footprint). Power device utilization may be defined as a percentage calculated by the ratio of the power device area to the total power module area. In one aspect, the area utilized in the present disclosure is calculated by multiplying the width by the length. In this regard, the width may be defined along an axis extending across the power module 100 as shown in FIG. 11, and the length may be defined along an axis perpendicular to the width as shown in FIG. The table below shows a specific set of non-limiting specifications.

In one aspect of the present disclosure, the power module 100 can have a power device utilization area in the range of 7-10%. In one aspect of the present disclosure, the power module 100 can have a power device utilization area in the range of 6-8%. In one aspect of the present disclosure, the power module 100 can have a power device utilization area in the range of 5-7%.

In various aspects, the height of the power module 100 may also be scalable. In this case, the power module 100 may be constructed to be as thin as possible to minimize inductance. This height may be set based on (A) the creepage and clearance specifications required for 1700V operation, (B) the height of the wire bonds, and (C) the type of encapsulation material used. For low range voltage modules (650V), certain design changes may be implemented to reduce the height. Conversely, for high range voltage devices, the power module 100 may be made taller. In various aspects, height as utilized in this disclosure is defined as perpendicular to the width and length. With reference to FIG. 4A, exemplary heights of the power module 100 are shown. The height of the power module may range from 7mm to 30mm, 9mm to 11mm, 11mm to 13mm, 13mm to 15mm, 15mm to 17mm, 17mm to 19mm, 19mm to 21mm, 21mm to 23mm, and 23mm to 27mm. The table below shows a specific set of non-limiting specifications:

Power Contact Parameters The power contacts or terminals 106, 108, 110 can be configured and constructed to be wide and to occupy the largest percentage of the power module 100 possible given practical voltage creepage/clearance limits. The width ratio compares the width of the contacts or terminals 106, 108, 110 to the width of the power module 100. In one aspect, the width of the power module 100 can be the width of the base plate 602. In one aspect, the width of the power module 100 can be the width of one or more power boards 606. In one aspect, the width of the power module 100 can be the width between the housing side walls 612. In one aspect, the width of the power module 100 can be the width of the housing lid 618. The length ratio takes the contact length of all three contacts or terminals 106, 108, 110 and compares it to the overall length of the power module 100. In one aspect, the length of the power module 100 can be the length of the base plate 602. In one aspect, the length of the power module 100 can be the length of the power board(s) 606. In one aspect, the length of the power module 100 can be the length between the housing sidewalls 612. In one aspect, the length of the power module 100 can be the length of the housing lid 618. The area ratio compares the total contact area to the total area of the power module 100. In one aspect, the area of the power module 100 can be the area of the base plate 602. In one aspect, the area of the power module 100 can be the area of the power board(s) 606. In one aspect, the area of the power module 100 can be the area between the housing sidewalls 612. In one aspect, the area of the power module 100 can be the area of the housing lid 618. The base ratio compares the total contact base width to the width of the power module 100. The base ratio assumes that there is a solder fillet around the periphery of the base. In one aspect, the width of the power module 100 can be the width of the base plate 602. In one aspect, the width of the power module 100 can be the width of one or more power boards 606. In one aspect, the width of the power module 100 can be the width between the housing side walls 612. In one aspect, the width of the power module 100 can be the width of the housing lid 618. The table below shows one particular set of non-limiting specifications.

In one aspect, the power module 100 can have a terminal area ratio greater than 20%. In one aspect, the power module 100 can have a terminal area ratio greater than 25%. In one aspect, the power module 100 can have a terminal area ratio greater than 30%. In one aspect, the power module 100 can have a terminal area ratio in the range of 20% to 25%. In one aspect, the power module 100 can have a terminal area ratio in the range of 25% to 30%. In one aspect, the power module 100 can have a terminal area ratio in the range of 30% to 35%.

In one aspect, the power module 100 can have a base ratio in the range of 70% to 80%. In one aspect, the power module 100 can have a base ratio in the range of 80% to 90%. In one aspect, the power module 100 can have a base ratio in the range of 90% to 95%.

In various aspects, the base 636 can be configured so that the legs of the contacts are "winged" or "fingered". In some aspects, the split legs of the base 636 can provide more space for the solder to create a fillet around the sides of the connector, which adds strength in multiple directions and axes. The split base 636 can distribute stress and improve reliability.

Vertical offsets 702 of the V+ and V- power contacts can be used to minimize the total loop inductance of the system by reducing the need for bends or offsets in the external busbar 900. In some aspects, such reduction in the complexity of the busbar 900 can also reduce costs. In one aspect, the vertical offset 702 can be 3.25 mm (metal thickness 3 mm, lamination separation 0.25 mm). In other aspects, the vertical offset 702 can have practical ranges of 2 mm to 3 mm, 3 mm to 4 mm, 4 mm to 5 mm, and 5 mm to 6 mm. The table below shows a specific set of non-limiting specifications.

Substrate Parameters The power substrate 606 may also be configured to be wide and occupied as much as possible by the power devices 302. Aspects of the present disclosure include high device area/substrate area utilization. The spacing of the power devices 302 may be determined by process design rules to optimize heat spreading, thermal performance, and manufacturability, and the like. The power device ratio compares the active device area in comparison to the overall width of the power substrate 606. In this regard, the width may be defined along an axis that runs through the power devices 302, as shown in FIG. 11. A portion of the width of the power substrate 606 may be used for the eddy current and temperature sensors 610. In some aspects, the percentage value of the power device ratio may be increased without including those features. In one aspect, the power module 100 may have an active device area greater than 60%. In one aspect, the power module 100 may have an active device area greater than 65%. In one aspect, the power module 100 can have an effective device area greater than 70%. In one aspect, the power module 100 can have an effective device area between 60% and 65%. In one aspect, the power module 100 can have an effective device area between 65% and 70%. In one aspect, the power module 100 can have an effective device area between 70% and 75%. The table below shows a specific set of non-limiting specifications.

In some aspects, the metal thickness of the power board 606 can be configured as follows: In various aspects, the metal thickness can be a trade-off between thermal performance, package resistance, cost, and the like. In one aspect, the metal thickness of the power board 606 can be less than 0.5 mm. In one aspect, the metal thickness of the power board 606 can be less than 0.3 mm. In one aspect, the metal thickness of the power board 606 can be 0.2 mm. In one aspect, the metal thickness of the power board 606 can be in the range of 0.1 mm to 0.6 mm, 0.2 mm to 0.3 mm, 0.3 mm to 0.4 mm, 0.4 mm to 0.5 mm, and 0.5 mm to 0.6 mm.

Wire Bond Parameters The power wire bonds 628 may be of any of the diameters listed in the table below. In one aspect, 12 mil (0.30 mm) diameter aluminum bonds may be utilized. In one aspect, the bond diameters may be 0.15 mm to 0.25 mm, 0.2 mm to 0.3 mm, 0.25 mm to 0.35 mm, 0.35 mm to 0.45 mm, and 0.45 mm to 0.55 mm. In other aspects, larger diameter aluminum bonds and larger diameter copper bonds may be utilized. In further aspects, soldered copper tabs may be utilized to maximize current capability. In one aspect, the diameter of the power wire bonds 628 may range from 0.15 mm to 0.6 mm. In one aspect, the diameter of the power wire bonds 628 may range from 0.19 mm to 0.52 mm. In one embodiment, the diameter of the power wire bonds 628 may range from 0.2 mm to 0.51 mm. The table below shows one particular set of non-limiting specifications:

In one aspect, the power wire bonds 628 can include aluminum wire bonds, aluminum ribbon bonds, copper wire bonds, copper ribbon bonds, copper solder tabs, copper sintered tabs, and the like, as shown in the table below.

In certain aspects, the wire bonds 628 can be configured to have loop geometry dimensions as listed in the table below. To minimize resistance, in various aspects, the loop geometry can be configured to be as low profile and short as possible. The bond length is determined by the die placement of the power device 302 and the configuration of the power module 100. In one aspect, the wire bond length can have a range of 4 mm to 12 mm. In one aspect, the wire bond length can have a range of 5 mm to 11 mm. In one aspect, the wire bond loop height can have a range of 0.5 mm to 3 mm. In one aspect, the wire bond loop height can have a range of 1 mm to 2.5 mm. The table below shows a specific set of non-limiting specifications.

In one aspect, this configuration can utilize more or a maximum number of bonds 628 per power device 302. The number of bonds 628 may depend on the die size, pad area, and bond diameter. The table below shows a specific set of non-limiting specifications. Specifically, the values listed below are for different size implementations of the MOSFET.

In one aspect, each power device 302 can be implemented to have between 3 and 12 bonds 628. In one aspect, each power device 302 can be implemented to have between 4 and 10 bonds 628. In one aspect, each power device 302 can be implemented to have 5 or more bonds 628. In one aspect, each power device 302 can be implemented to have 7 or more bonds 628. In one aspect, each power device 302 can be implemented to have 9 or more bonds 628. In one aspect, each power device 302 can be implemented to have 11 or more bonds 628.

Inductance and Switching Parameters The inductance of the power module 100 may be determined by the total loop length, cross-sectional area, magnetic flux cancellation, and the like. In various aspects, the power module 100 may be configured to minimize inductance by using wide power contacts, configuring the power module 100 to have a low profile, and achieving some magnetic flux cancellation within the power module 100 when the loops fold over. The width of the power module 100 may also have a large effect on inductance.

The table below is based on a specific embodiment of the power module 100 and shows other simulation results for determining the inductance, as well as the inductance for other configurations. The configuration with the lowest inductance assumes that the power module 100 can also be configured thinner (i.e., the 650V thickness listed previously). The dV/dt maximum is not a limit for the power module 100.

The di/dt values were calculated to be the theoretical maximum assuming 1200V devices and an 800V bus. This could result in a maximum possible overshoot of 400V. In this regard, the calculations assumed a bus loop inductance of 2nH added in series with the power module 100. With this assumption, one embodiment of the table below lists the fastest the power module 100 can switch.

In one or more aspects, losses were determined by testing certain embodiments using very aggressive switching. In one aspect, the losses may range from 0.25 to 0.050 mJ/A, 0.25 to 0.040 mJ/A, and 0.25 to 0.035 mJ/A. The table below shows a particular set of non-limiting specifications.

In aspect 1, the total stray inductance value of the power module 100 can have a range of 9 (nH) to 11 (nH). In aspect 2, the total stray inductance value of the power module 100 can have a range of 6 (nH) to 7 (nH). In aspect 3, the total stray inductance value of the power module 100 can have a range of 3 (nH) to 4 (nH). In aspect 4, the total stray inductance value of the power module 100 can have a range of 2 (nH) to 3 (nH).

Figures 43-58 show a power module according to one aspect of the present disclosure.

In this regard, because the current density of the power devices 302 and other components is high, the thermal performance of the power module 100 of FIGS. 43-58 can be configured to maximize heat flux, reduce system size, reduce cost, and the like. Specifically, the power module 100 shown in FIGS. 43-58 can include any one or more of the aspects disclosed herein. Moreover, the power module 100 of FIGS. 43-58 can be further configured for direct cooling to maximize heat flux, reduce system size, reduce cost, and the like. Furthermore, implementing direct cooling with the power module 100 can remove or eliminate the thermal interface between the power module 100 and the cold plate or heat sink, and any material or structure disposed between the top surface of the cold plate and the cooling fluid. In this regard, prior art implementations include a thermal interface material (TIM) disposed at the interface between the power module and the cold plate, and the use of TIMs can cause problems with surface adhesion, aging, pump-out, and the like. By directly cooling the surface of the base plate 602 of the power module 100, a greater amount of heat flux can be handled within the power module 100 and associated structures.

In one aspect, the power module 100 can include a plurality of pin fins 642. In one aspect, the plurality of pin fins 642 can be configured to transfer heat from one or more components of the power module 100. In one aspect, the plurality of pin fins 642 can be configured to cool one or more components of the power module 100. In one aspect, the plurality of pin fins 642 can be configured to directly cool one or more components of the power module 100. In one aspect, the plurality of pin fins 642 can be configured to cooperate with the cold plate 902 to directly cool one or more components of the power module 100. In one aspect, the plurality of pin fins 642 can be configured to allow coolant to pass between the pin fins 642.

In one aspect, the base plate 602 can include a plurality of pin fins 642. In one aspect, the plurality of pin fins 642 can be disposed on a surface of the base plate 602. In one aspect, the plurality of pin fins 642 can be disposed on a bottom surface of the base plate 602. In one aspect, the plurality of pin fins 642 can be disposed on a bottom surface of the base plate 602 opposite the housing side wall 612 of the base plate 602.

In one embodiment, the pin fins 642 may form a channel parallel to the axis 654. In one embodiment, the pin fins 642 may form a channel parallel to the axis 656. In one embodiment, the pin fins 642 may form a channel that is zigzag with respect to the axis 654 or a channel that is oblique with respect to the axis 654. In one embodiment, the pin fins 642 may form a channel that is zigzag with respect to the axis 656 or a channel that is oblique with respect to the axis 656.

The arrangement of the pin fins 642 and the arrangement of the flow passages disposed between the pin fins 642 can be configured to enhance or promote movement of the coolant around the pin fins 642, heat transfer from the pin fins 642 to the coolant, reduction of surface and/or barrier layers adjacent the pin fins 642 to enhance heat transfer, and the like.

46, 50 and 54, each of the pin fins 642 can be integrally formed with the base plate 602. In other aspects, each of the pin fins 642 can be attached to the base plate 602 by welding, adhesive, soldering, brazing or the like. In one aspect, each of the pin fins 642 can include a base 644 connected to the base plate 602.

In one aspect, the pin fins 642 can be formed from the same material as the base plate 602. In one aspect, the pin fins 642 can be formed from the same material as the base plate 602 to save weight. In one aspect, the pin fins 642 can be formed from a material different than the material of the base plate 602. In one aspect, the pin fins 642 can be formed from a metallic material. In one aspect, the pin fins 642 can include copper. In one aspect, the pin fins 642 can be formed of copper.

In one aspect, each of the pin fins 642 can include one or more surfaces 646 extending from the base 644. In one aspect, each of the pin fins 642 can have a terminating surface 648. In one aspect, the terminating surface can be flat, contoured, non-flat, pointed, curved, or other similar surfaces. In one aspect, the one or more surfaces 646 can narrow as they extend to the terminating surface 648. In one aspect, the one or more surfaces 646 can be perpendicular to the surface of the base plate 602 as they extend to the terminating surface 648.

In one aspect, the pin fins 642 may each have a cross-sectional shape with respect to a plane parallel to the surface of the base plate 602. In this regard, the pin fins 642 may have a square cross-sectional shape, a rectangular cross-sectional shape, a circular cross-sectional shape, a contoured cross-sectional shape, an elliptical cross-sectional shape, a symmetrical cross-sectional shape (along one or more axes), an asymmetrical cross-sectional shape (along one or more axes), an airfoil-shaped cross-sectional shape, a wing-shaped cross-sectional shape, or other similar cross-sectional shapes. Furthermore, the pin fins 642 may have a first of the above shapes, a plurality of the above shapes, or other similar shapes. However, the pin fins 642 may be implemented by any shaped structure on the base plate 602 of the power module 100.

In one aspect, the termination surface 648 can have a cross-sectional shape relative to a plane parallel to the surface of the base plate 602. In this regard, the termination surface 648 can have a square cross-sectional shape, a rectangular cross-sectional shape, a circular cross-sectional shape, a contoured cross-sectional shape, an elliptical cross-sectional shape, a symmetrical cross-sectional shape (along one or more axes), an asymmetrical cross-sectional shape (along one or more axes), an airfoil-shaped cross-sectional shape, an airfoil-shaped cross-sectional shape, or other similar cross-sectional shape.

In one aspect, the base 644 can have a cross-sectional shape relative to a plane parallel to a surface of the base plate 602. In this regard, the base 644 can have a square cross-sectional shape, a rectangular cross-sectional shape, a circular cross-sectional shape, a contoured cross-sectional shape, an elliptical cross-sectional shape, a symmetrical cross-sectional shape (along one or more axes), an asymmetrical cross-sectional shape (along one or more axes), an airfoil-shaped cross-sectional shape, an airfoil-shaped cross-sectional shape, or other similar cross-sectional shape.

In one aspect, the base 644 can have the same cross-sectional shape as the cross-sectional shape of the end surface 648. In one aspect, the base 644 can have the same cross-sectional shape and size as the end surface 648. In one aspect, the base 644 can have the same cross-sectional shape as the end surface 648, but a different size. In one aspect, the base 644 can have a cross-sectional shape that is different from the cross-sectional shape of the end surface 648.

In one aspect, the pin fins 642 may be formed using one or more operations to form the fin pattern of the pin fins 642 shown in the drawings, including machining, forging, forming, stamping, deformation, and other like operations, and the pin fins 642 may also be attached using welding, adhesives, soldering, brazing, or the like. However, the pin fins 642 may be formed using any manufacturing method and/or technique known to one of ordinary skill in the art for producing fin and pin surfaces on the base plate 602.

Referring to FIG. 46, in one aspect, the diameter or length L of the pin fin 642 along the base 644, defined parallel to the surface of the base plate 602, can be 1 mm to 8 mm, 1 mm to 2 mm, 2 mm to 3 mm, 3 mm to 4 mm, 4 mm to 5 mm, 5 mm to 6 mm, 6 mm to 7 mm, or 7 mm to 8 mm. These dimensions may be equally applicable to all configurations of the pin fin 642 disclosed herein.

46, in one aspect, the height H of the pin fin 642 from the base 644 to the end surface 648, defined perpendicular to the surface of the base plate 602, can be 1 mm to 12 mm, 2 mm to 10 mm, 4 mm to 8 mm, 1 mm to 2 mm, 2 mm to 3 mm, 3 mm to 4 mm, 4 mm to 5 mm, 5 mm to 6 mm, 6 mm to 7 mm, 7 mm to 8 mm, 8 mm to 9 mm, 9 mm to 10 mm, 10 mm to 11 mm, or 11 mm to 12 mm. These dimensions may be equally applicable to all configurations of the pin fin 642 disclosed herein.

Referring to FIG. 46, in one aspect, the inter-pin spacing S of the pin fins 642 can be defined by the central axis of adjacent pin fins 642 perpendicular to the base plate 602, and the spacing S can be 2 mm to 12 mm, 4 mm to 10 mm, 2 mm to 3 mm, 3 mm to 4 mm, 4 mm to 5 mm, 5 mm to 6 mm, 6 mm to 7 mm, 7 mm to 8 mm, 8 mm to 9 mm, 9 mm to 10 mm, 10 mm to 11 mm, or 11 mm to 12 mm. These dimensions may be equally applicable to all configurations of pin fins 642 disclosed herein.

Figure 43 shows a perspective bottom view of a power module according to one embodiment of the present disclosure, Figure 44 shows a side view of the power module according to Figure 43, Figure 45 shows a bottom view of the power module according to Figure 43, and Figure 46 shows a partial perspective bottom view of the power module according to Figure 43.

With reference to FIGS. 43-46, each pin fin 642 can include one or more surfaces 646 extending from a base 644. In one aspect, the pin fin 642 can have a termination surface 648. In one aspect, the termination surface can be a contoured surface, a non-planar surface, or other similar surface. In one aspect, the one or more surfaces 646 can taper off as they extend to the termination surface 648.

In one aspect, the termination surface 648 may have a cross-sectional shape relative to a plane parallel to a surface of the base plate 602. In this regard, the termination surface 648 may have an asymmetric cross-sectional shape, an airfoil cross-sectional shape, an airfoil cross-sectional shape, or other similar cross-sectional shape.

In one aspect, the base 644 can have a cross-sectional shape relative to a plane parallel to a surface of the base plate 602. In this regard, the base 644 can have a square cross-sectional shape, a rectangular cross-sectional shape, or other similar cross-sectional shape.

In one embodiment, the pin fins 642 may form a flow path parallel to the axis 654. In one embodiment, the pin fins 642 may form a flow path parallel to the axis 656.

Figure 47 shows a perspective bottom view of a power module according to one embodiment of the present disclosure, Figure 48 shows a side view of the power module according to Figure 47, Figure 49 shows a bottom view of the power module according to Figure 47, and Figure 50 shows a partial perspective bottom view of the power module according to Figure 47.

With reference to FIGS. 47-50, each pin fin 642 can include one or more surfaces 646 extending from a base 644. In one aspect, each pin fin 642 can have a terminal surface 648. In one aspect, the terminal surface can be a flat surface or other similar surface. In one aspect, the one or more surfaces 646 can taper as they extend to the terminal surface 648.

In one aspect, the termination surface 648 can have a cross-sectional shape relative to a plane parallel to the surface of the base plate 602. In this regard, the termination surface 648 can have a circular cross-sectional shape, a contoured cross-sectional shape, an elliptical cross-sectional shape, a symmetrical cross-sectional shape, or other similar cross-sectional shape.

In one aspect, the base 644 can have a cross-sectional shape relative to a plane parallel to a surface of the base plate 602. In this regard, the base 644 can have a circular cross-sectional shape, a contoured cross-sectional shape, an elliptical cross-sectional shape, a symmetrical cross-sectional shape, or other similar cross-sectional shape.

In one aspect, the base 644 can have the same cross-sectional shape as the end face 648. In one aspect, the base 644 can have the same cross-sectional shape as the end face 648, but a different size.

In one aspect, multiple pin fins 642 may form flow paths parallel to axis 654. In one aspect, multiple pin fins 642 may form flow paths parallel to axis 656. In one aspect, bases 644 of adjacent pin fins 642 may be confluent, joined, connected, abutting, or in other similar locations.

Figure 51 shows a perspective bottom view of a power module according to one embodiment of the present disclosure, Figure 52 shows a side view of the power module according to Figure 51, Figure 53 shows a bottom view of the power module according to Figure 51, and Figure 54 shows a partial perspective bottom view of the power module according to Figure 51.

With reference to FIGS. 51-54, each pin fin 642 can include one or more surfaces 646 extending from a base 644. In one aspect, each pin fin 642 can have a terminal surface 648. In one aspect, the terminal surface can be a flat surface or other similar surface. In one aspect, the one or more surfaces 646 can taper as they extend to the terminal surface 648.

In one aspect, the termination surface 648 can have a cross-sectional shape relative to a plane parallel to a surface of the base plate 602. In this regard, the termination surface 648 can have a square cross-sectional shape, a rectangular cross-sectional shape, a symmetrical cross-sectional shape, or other similar cross-sectional shape.

In one aspect, the base 644 can have a cross-sectional shape relative to a plane parallel to a surface of the base plate 602. In this regard, the base 644 can have a square cross-sectional shape, a rectangular cross-sectional shape, a symmetrical cross-sectional shape, or other similar cross-sectional shape.

In one aspect, the base 644 can have the same cross-sectional shape as the end face 648. In one aspect, the base 644 can have the same cross-sectional shape as the end face 648, but a different size.

In one embodiment, the pin fins 642 may form a flow path parallel to the axis 654. In one embodiment, the pin fins 642 may form a flow path parallel to the axis 656.

Figure 55 shows a perspective bottom view of a power module according to one embodiment of the present disclosure, Figure 56 shows a side view of the power module according to Figure 55, and Figure 57 shows a bottom view of the power module according to Figure 55.

With reference to FIGS. 55-57, each pin fin 642 can include one or more surfaces 646 extending from a base 644. In one aspect, each pin fin 642 can have a terminal surface 648. In one aspect, the terminal surface can be a flat surface or other similar surface. In one aspect, the one or more surfaces 646 can taper as they extend to the terminal surface 648.

In one aspect, the termination surface 648 can have a cross-sectional shape relative to a plane parallel to a surface of the base plate 602. In this regard, the termination surface 648 can have a square cross-sectional shape, a rectangular cross-sectional shape, a symmetrical cross-sectional shape, or other similar cross-sectional shape.

In one aspect, the base 644 can have a cross-sectional shape relative to a plane parallel to a surface of the base plate 602. In this regard, the base 644 can have a square cross-sectional shape, a rectangular cross-sectional shape, a symmetrical cross-sectional shape, or other similar cross-sectional shape.

In one aspect, the base 644 can have the same cross-sectional shape as the cross-sectional shape of the end surface 648. In one aspect, the base 644 can have the same cross-sectional shape and size as the end surface 648.

In one embodiment, the pin fins 642 may form a zigzag flow path with respect to the axis 654 or a flow path oblique to the axis 654. In one embodiment, the pin fins 642 may form a zigzag flow path with respect to the axis 656 or a flow path oblique to the axis 656.

Figure 58 shows a perspective view of a power module embodiment according to one aspect of the present disclosure.

With reference to FIG. 58, the power module 100 implementing direct cooling using pin fins 642 can be placed on and/or within the cold plate 902. Specifically, FIG. 58 illustrates one of the power modules 100 implementing direct cooling using pin fins 642 as disclosed. In this regard, the embodiment of FIG. 58 can include one, multiple, or all of the power modules 100 implementing direct cooling using pin fins 642 as disclosed. In one aspect, the power modules 100 can be placed on both sides of the cold plate 902. In this regard, the power modules 100 placed on both sides of the cold plate 902 can maximize power density, reduce complexity, and/or the like. In one aspect, the power modules 100 can be placed on one side of the cold plate 902. This allows the power modules 100 to be directly cooled using the pin fins 642, the cold plate 902, and the like. As described further herein, the directly cooled power module 100 can exhibit significantly higher thermal performance.

In one aspect, the cold plate 902 can accommodate any number of power modules 100 arranged in a row on the top side of the cold plate 902 and on the bottom side of the cold plate 902 depending on the desired topology. In one aspect, the cold plate 902 can accommodate any number of power modules 100 arranged in a row on one side of the cold plate 902 depending on the desired topology. In this regard, the cold plate 902 can be made longer or shorter to accommodate the number of power modules 100.

As further shown in FIG. 58, a seal 908 can be disposed between the power module 100 and the cold plate 902. The seal 908 can be an O-ring, a gasket, and/or the like. In some aspects, the seal 908 can be an epoxy, RTV silicone, a sealing material of the like, and/or the like. In other aspects, the seal 908 can be formed by directly welding, brazing, or attaching the base plate 602 directly to the cold plate 902.

In one aspect, the cold plate 902 can have a fluid connection 3516 configured to receive a cooling fluid source for cooling purposes associated with the cold plate 902 and/or configured to deliver a cooling fluid for cooling purposes associated with the cold plate 902. In one aspect, the fluid connection 3516 can include threaded fittings, flanged fittings, quick connect fittings, hose barb fittings, soldered tubes, welded tubes, and the like. In one aspect, the cold plate 902 can have inlet ports, outlet ports, fluid flow paths, and/or the like configured to distribute fluid flow evenly to the power modules 100. The cold plate 902 may further include other considerations for mounting and sealing the power module 100, such as for mounting the cold plate 902 assembly itself to another structure in applications such as inverters, converters, or the like.

In one aspect, the power module 100 of FIGS. 43-58 can be inserted into, implemented with, configured with, or the like. The application can be a system implementing the power module 100 of FIGS. 43-58. The application can be a power system, a motor system, an automotive motor system, a charging system, an automotive charging system, a vehicle system, an industrial motor drive, an embedded motor drive, an uninterruptible power supply, an AC-DC power supply, a welding machine power supply, a military system, an inverter, an inverter for a wind turbine, for a solar power panel, for a tidal power plant, and for an electric vehicle (EV), a converter, and the like.

Figure 59 shows a perspective view of a power module embodiment according to one aspect of the present disclosure.

59 illustrates an inverter 990 that may be implemented as a three-phase inverter. In aspects, the inverter 990 may be configured as two separate three-phase inverters, as one three-phase inverter, as one full bridge, as one half bridge, and/or the like. In one aspect, the inverter 990 may be configured to include six dedicated half bridges. In one aspect, the above configurations may be constructed and arranged to include connections outside the inverter 990. In one aspect, the above configurations may include different versions of the power module 100 and/or other assembly components. However, the various features described herein with respect to FIG. 59 may be implemented in any of the applications described herein. With further reference to FIG. 59, the inverter 990 may include the phase outputs 930, sensors 980, capacitors 102, cold plates 902, fluid connection tubes 3516, PCBs 936, bus bars 900, and the like, as described in detail herein.

In one aspect, the phase output 930 can be formed by stamping, laser cutting, or the like. In one aspect, the phase output 930 can be formed of a metal, which may include copper, may be copper, and/or may include other metals. In one aspect, the phase output 930 can include bends to optimize size. In one aspect, the phase output 930 can include L-shaped bends to optimize size. In one aspect, the phase output 930 can include 90 degree bends to optimize size. In one aspect, the phase output 930 can include threaded holes for housing mounting, strain relief, and the like.

In one aspect, the sensor 980 can include current sensing for each output terminal of the phase output 930. In one aspect, the sensor 980 can be configured to operate with a closed loop system to address signal quality and the like. In another aspect, the inverter 990 can operate in an open loop to reduce cost and size.

In one aspect, a PCB 936 for signal conditioning can be implemented. In one aspect, a PCB 936 for interconnection can be implemented. In one aspect, a PCB 936 for signal conditioning and interconnection can be implemented.

In one aspect, the capacitor 102 can be configured as a rectangular block to allow for better space utilization. In one aspect, the capacitor 102 can be configured with an integrated bus bar 900 to connect the power module 100 to the capacitor 102 as described herein. In one aspect, the capacitor 102 can be a polypropylene film capacitor.

Figure 60 shows a perspective view of a power module embodiment according to Figure 59.

60 further illustrates the inverter 990 with a number of housing components 992. In one aspect, the number of housing components 992 can include sheet metal sections, vents 984, powder coating, a solid front and welded edges for EMI, snap-in covers 988, synthetic material sections, plastic material sections, handles 986, grounding sections, standoffs, cooling port openings, embossed terminal markings, windows for viewing components such as the controller, and the like.

In one aspect, the snap-in cover 988 can include a synthetic material, such as plastic. In one aspect, the snap-in cover 988 can be a molded part. In one aspect, the snap-in cover 988 can include a captive fastener portion to facilitate connection. For example, the snap-in cover 988 can include a captive hex nut to facilitate connection. In one aspect, the inverter 990 can include various permutations and/or configurations of the phase outputs 930 and the snap-in cover 988, which can be incorporated into the inverter 990.

Figure 61 shows a graph plotting junction temperature against output current for two different power modules.

See Figure 61. Two versions of the power module were tested. The first version of the power module was implemented as a 1200V half-bridge power module with a maximum case temperature rating of 125°C (Celsius). The drain-source on-state resistance of this power module was 4.6mΩ (milliohms) at a maximum junction temperature of 175°C. This power module was implemented with a planar copper baseplate mounting surface.

A second version of the power module utilized the same power devices 302 and implemented a direct-cooled copper pin fin base plate with pin fins 642 disposed on the base plate 602 as disclosed herein with reference to Figures 43-58 and associated description.

Planar baseplate versions of power modules required the application of a thermal interface material (TIM) between the power module and the heat sink or cold plate to fill the thermal path voids. The effect of this TIM was to provide additional thermal impedance between the power module case and the cold plate. Directly cooled power modules include pin fins 642 as disclosed herein with reference to Figures 43-58 and related description, and are designed to be in direct contact with the coolant, which negates the need for a TIM.

As a result, the thermal impedance was reduced when using the direct-cooled power module disclosed herein with reference to Figures 43-58 and related description, as compared to the planar baseplate power module. For the planar baseplate version of the power module, the testing was performed using a custom micro deformation liquid-cooled cold plate with a coolant temperature of 25°C and high performance TIMs. Maximum power dissipation was measured at 750W per switch position.

For the direct-cooled version of the power module disclosed herein with reference to Figures 43-58 and related description, this test was performed using a cold plate 902 with internal coolant channels and machined cavities, with gasket seals to prevent leakage. The machined cavities include the base plate 602 seated inside, allowing the coolant to pass between the pin fins 642. Maximum power dissipation was measured at 1000W per switch position. For both tests, junction temperatures were monitored using a thermal camera and virtual junction techniques.

To demonstrate the performance advantages of the direct-cooled power modules 100 at a system level as disclosed herein with reference to Figures 43-58 and related description, these power modules were installed in a three-phase inverter and tested under application conditions, using an 800V DC bus, a 20kHz switching frequency, a three-phase load, and a constant coolant temperature of 25°C.

After applying this DC bus voltage to the inverter, the inverter's output current was slowly increased while monitoring a temperature sensor integrated into the power module. The temperature sensor measurements were correlated with junction temperature by testing a specially constructed power module that omitted the lid to enable thermal imaging of the power device.

As shown in Figure 61, the planar baseplate version of the power module implemented in an inverter was found to handle up to 410A _RMS (Ampere-mean-square), while the direct-cooled version of the power module 100 of the present disclosure was found to handle 490A _RMS . Thus, the power module 100 implementing the pin fins 642 in accordance with Figures 43-58 and the associated description supported a 20% increase in output current capability.

It should be noted that the power modules 100 associated with FIGS. 43-58 may be implemented to have different voltages, temperature ratings, on-state resistances, different maximum junction temperatures, different coolant temperatures, different switching frequencies, and the like, as well as to increase the output current capability over non-directly cooled power modules. In this regard, the output current capability may be increased by 5% to 40%, 5% to 10%, 10% to 15%, 15% to 20%, 20% to 25%, 25% to 30%, 30% to 35%, 35% to 40%, 10% to 30%, 20% to 40%, 15% to 35%, or 15% to 40% over non-directly cooled power modules. In this regard, the output current capability may be increased by at least 5%, 10%, 15%, 20%, 25%, 30%, 35%, or 40% over non-directly cooled power modules. Additionally, numerous other performance improvements are contemplated by the power module 100 associated with Figures 43-58 implemented as described herein.

In one or more aspects of the present disclosure, the power module 100 can be implemented in a high performance, compact, modular three-phase inverter based on the disclosed power module 100 specifically optimized to fully utilize silicon carbide (SiC) MOSFETs. In some aspects, the modular AC output allows the inverter to be configured as a dual inverter or a single inverter. In some aspects, the double-sided cold plate, custom capacitors, and directly cooled SiC modules can enable extremely high power density for the inverter. Parasitics of all critical components, including the power module 100 and capacitors, were verified to ensure the lowest total stray inductance. In some aspects, the unit can operate under application conditions using an 800V DC bus and 480V/830A phase current.

In this regard, conventional power packages are an effective and well-accepted industry solution for state-of-the-art silicon (Si) IGBTs. However, conventional power packages fail to fully take advantage of what SiC-based technology has to offer. The footprint and internal layout of conventional power packages were originally designed for Si devices, which typically have a single or a small number of large paralleled devices where the signal network follows long paths. The bipolar nature of IGBTs limits the switching speed in such a way that the design tradeoffs mentioned above are acceptable.

To fully utilize the high performance attributes of SiC devices, a technology-centric design has been applied in connection with the disclosed power module 100. The disclosed power module 100 solves the shortcomings of existing module designs. In this regard, the disclosed SiC-centric design allows multiple smaller dies to be placed in parallel such that they share dynamic currents evenly, and optimizes the signal network with short-path parallel planes such that the SiC dies switch uniformly even under high speeds.

To meet these needs, the disclosed power module 100 is highly optimized to achieve maximum performance from all sizes of commercially available 650-1700V SiC MOSFETs. Some aspects of the disclosed power module 100 provide the ability to carry high currents (300->600A) in a small footprint (53mm x 80mm) and have a terminal arrangement that allows for straight bussing and interconnection. The evenly matched low inductance layout of the disclosed power module 100 results in high quality switching events and minimizes vibrations internal and external to the power module 100. In some implementations, the disclosed power module 100 can have a stray inductance of about 6.7nH and an area that is only about 60% of that of a 62mm module. The disclosed current loops of the power module 100 are designed to be wide, low profile, and evenly distributed between devices so that each of those current loops has equivalent impedance across the switch positions. The power terminals can be vertically offset so that the busbars between the DC link capacitors and the power module 100 can be stacked all the way to the power module 100 without the need for bends, coining, standoffs or complex isolation. Ultimately, this achieves low inductance throughout the power loop from the DC link capacitors and the SiC devices.

Due to the high current density of the SiC power devices, the thermal performance of the power module 100 and cold plate allows for maximizing heat flux and reducing system size and cost. The disclosed direct-cooled power module can implement a copper pin-fin baseplate with thermal performance that exceeds that of existing planar baseplate power modules. Planar baseplate power modules require a thermal interface material (TIM) to be applied between the power module and the heat sink or cold plate to fill the thermal path void. The effect of this TIM is an additional thermal impedance between the module case and the cold plate. The direct-cooled power module 100 has pins designed to directly contact the coolant, negating the need for a TIM. As shown in FIG. 61, the planar baseplate version of the power module can handle up to 410A _RMS , while the direct-cooled version of the power module 100 can handle 490A _RMS . This corresponds to a 20% increase in output current capability.

In some aspects, the disclosed power module 100 can be implemented in inverter designs that add more power modules 100 with the same unique double-sided cold and low parasitic, high performance design. In one aspect, a double-sided cold plate can be utilized that features top and bottom cooling surfaces that allow for double the number of power modules 100 in the same footprint area, which when used with the directly cooled power module 100 of the present disclosure, provides more than double the power density compared to prior art implementations. In some aspects, custom DC link capacitors can be implemented with the integrated stacked terminals disclosed herein that are attached directly to both the top and bottom banks of the power module. This design has low stray inductance between the power module 100 and the capacitor, eliminating the need for separate bus bars. The non-planar power module 100 of the present disclosure allows the capacitor terminal assembly to have no bends, which reduces cost and maximizes overlap. These DC input terminals can be integrated into the capacitor, creating a tightly integrated solution for interconnecting six half-bridge modules.

In some aspects, the disclosed power module 100 can be supported by gate drivers with high noise immunity and fast protection to effectively switch the device and provide maximum survivability under fault conditions.

In some aspects, the AC output terminals can be designed and implemented as modular subassemblies, allowing the inverter to be configured as a dual three-phase inverter with 430A _RMS or greater output and six or more current sensors, or as a single three-phase inverter with 860A _RMS or greater output current and three or more current sensors.

The disclosed double-sided cold plate assembly can be implemented with the directly cooled power module 100 described herein mounted on the top and bottom sides with gasket seals, as well as an inverter including sensors, modules, cold plates and capacitors.

To ensure the high performance of the system, components were evaluated in both frequency and time domains. In some aspects, small-signal parasitic extraction allows accurate measurement of parasitic elements that can be utilized in an iterative design process to minimize stray inductance. For each power module, the quality of the switching waveforms for both overshoot voltage and ringing was confirmed by double pulse testing at 800V and 600A of the module and DC link capacitor. In some aspects, a DC link capacitor design can be implemented with optimal terminal spacing and placement to balance current density and minimize stray inductance.

Accordingly, the present disclosure has described a power module 100 and associated systems configured to handle heat and increase output current capability, which provides improvements over non-directly cooled power modules. Additionally, the disclosed power module 100 can be implemented in numerous topologies, including half-bridge, full-bridge, common source, common drain, neutral point clamped, three-phase, and other similar configurations. Applications of the power module 100 can include power systems, motor systems, automotive motor systems, charging systems, automotive charging systems, vehicle systems, industrial motor drives, embedded motor drives, uninterruptible power supplies, AC-DC power supplies, welding machine power supplies, military systems, inverters, inverters for wind turbines, solar power panels, tidal power plants, and electric vehicles (EVs), converters, and the like.

In response, the present disclosure further describes an improved power module 100 and associated systems configured to address parasitic impedances such as loop inductance to increase stability, reduce switching losses, reduce EMI, and limit stress on system components. Specifically, the disclosed power module, along with the disclosed arrangement, has the ability to reduce inductance, in some aspects by as much as 10%. Furthermore, the disclosed power module 100 can be implemented in numerous topologies, including half-bridge configurations, full-bridge configurations, common source configurations, common drain configurations, neutral clamped configurations, and three-phase configurations. Applications for the power module 100 include motor drives, solar inverters, circuit breakers, protection circuits, DC-DC converters, and other similar applications.

The power module 100 of the present disclosure is adaptable to most systems within the specific power handling needs and size and weight limitations for a given application. The power module design and system level construction described in this disclosure allows high levels of power density and volumetric utilization to be achieved.

Aspects of the present disclosure have been described above with reference to the accompanying drawings in which aspects of the disclosure are shown. However, it is understood that the present disclosure can be embodied in many different forms and should not be construed as being limited to the aspects described above. Rather, these aspects are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. In addition, the various aspects described can be implemented separately. In addition, one or more of the various aspects described can be combined. Like numbers refer to like elements throughout.

Throughout this specification, terms such as first, second, etc. are used to describe various elements, but it is understood that the elements are not limited by these terms. These terms are only used to distinguish one element from another. For example, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element, without departing from the scope of this disclosure. The term "and/or" includes any and all combinations of one or more of the associated listed items.

The terms used herein are for the purpose of describing particular aspects only and are not intended to limit the disclosure. Unless otherwise clear from the context, when used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well. As used herein, the terms "comprises", "comprising", "includes" and/or "including" specify the presence of stated features, integers, steps, operations, elements and/or components, but are understood not to preclude the presence or addition of one or more other features, integers, steps, operations, elements, components and/or groups thereof.

When an element, such as a layer, region, or substrate, is described as being "on" or extending "on" another element, it is understood that the element may be directly on or extending directly onto the other element, or there may be intervening elements. Conversely, when an element is described as being "directly on" or extending "directly onto" another element, there are no intervening elements. Also, when an element is described as being "connected" or "coupled" to another element, it is understood that the element may be directly connected to or directly coupled to the other element, or there may be intervening elements. Conversely, when an element is described as being "directly connected" or "directly coupled" to another element, there are no intervening elements.

Relative terms such as "below" or "above" or "upper" or "lower" or "top" or "bottom" may be used herein to describe the relationship of one element, layer or region to another element, layer or region shown in the figures. It is understood that these terms are intended to encompass different orientations of the device in addition to the orientation shown in the figures.

Aspects of the present disclosure are described herein with reference to cross-sectional illustrations that are schematic illustrations of idealized embodiments (and intermediate structures) of the present disclosure. The thicknesses of layers and regions in the drawings may be exaggerated for clarity. Additionally, variations from the shapes of the illustrations are expected as a result, for example, of manufacturing techniques and/or tolerances.

The drawings and specification disclose exemplary embodiments of the present disclosure. Although specific terms have been employed, they are used in a generic and descriptive sense only and not for purposes of limitation. The scope of the present disclosure is set forth in the following claims.

Aspects of the present disclosure may be implemented within any type of computing device having wired/wireless communication capabilities over a communication channel, such as desktop computers, personal computers, laptop/mobile computers, personal data assistants (PDAs), mobile phones, tablet computers, cloud computing devices, and the like.

Furthermore, in accordance with various aspects of the present disclosure, the methods described herein are intended to function via dedicated hardware implementations constructed to perform the methods described herein, including, but not limited to, PCs, PDAs, semiconductors, application specific integrated circuits (ASICs), programmable logic arrays, cloud computing devices, and other hardware devices.

It should also be noted that the software implementations of the present disclosure described herein may be stored on tangible storage media, e.g., magnetic media such as disks or tapes, magneto-optical or optical media such as disks, or solid-state media such as memory cards or other packages, containing one or more read-only (non-volatile) memories, random access memories, or other re-writable (volatile) memories. A digital attachment to an email, or other independent information archive or set of archives, is considered a distribution medium equivalent to a tangible storage medium. Thus, the present disclosure is considered to include the tangible storage or distribution media listed herein on which the software implementations of the present disclosure are stored, as well as equivalents and successor media recognized in the art.

Furthermore, various aspects of the present disclosure may be implemented in non-standard computer implementations. Moreover, as will be apparent from the disclosure herein, various aspects of the present disclosure described herein enhance the functionality of a system. Moreover, various aspects of the present disclosure include computer hardware specifically programmed to solve the complex problems addressed by the present disclosure. Thus, various aspects of the present disclosure generally enhance the functionality of a system, in its particular implementation as defined by the claims, performing the methods described by the present disclosure.

While the present invention has been described with respect to exemplary embodiments, those skilled in the art will recognize that the disclosure can be practiced with modifications within the spirit and scope of the appended claims. The examples provided above are for illustrative purposes only, and are not intended to be an exhaustive list of all possible designs, embodiments, applications, or modifications of the present disclosure. In this regard, it is contemplated that the various embodiments, features, components, elements, modules, arrangements, circuits, and the like can be interchanged, mixed, matched, combined, and the like. In this regard, the various features of the present disclosure are modular, and the features can be mixed and matched with one another.

Claims (67)

A power module,
at least one conductive power substrate;
a housing disposed on the at least one conductive power substrate;
a first terminal electrically connected to the at least one conductive power substrate;
A second terminal;
a third terminal electrically connected to the at least one conductive power substrate;
a plurality of power devices disposed on and connected to the at least one conductive power substrate;
a base plate and the at least one conductive power substrate disposed on the base plate;
a plurality of pin fins disposed on a bottom surface of the base plate, the pin fins configured to provide direct cooling to the power module, the pin fins having an airfoil-shaped cross-sectional shape and/or an airfoil-shaped cross-sectional shape;
Equipped with
the plurality of pin fins include a base, a terminal surface, and one or more surfaces, the one or more surfaces extending from the base to the terminal surface and tapering;
Power module. the plurality of pin fins are disposed on a bottom surface of the base plate;
the plurality of pin fins are constructed and arranged to form flow channels between the plurality of pin fins;
the flow path is parallel to a first axis and a second axis of the power module;
the first terminal having a contact surface located on the housing;
the second terminal having a contact surface located on the housing;
the third terminal is electrically connected to at least one power device of the plurality of power devices;
The power module according to claim 1 . 2. The power module of claim 1, wherein each pin fin of the plurality of pin fins is integrally formed with the base plate and comprises the same material as the base plate, and adjacent mountings of the plurality of pin fins are oriented parallel to a first axis or a second axis of the power module. The power module of claim 1 , wherein the base has a cross-sectional shape that is different from a cross-sectional shape of the end faces . the termination surface includes a cross-sectional shape relative to a plane parallel to a surface of the base plate;
the cross-sectional shape comprises at least one of an asymmetric cross-sectional shape, an airfoil cross-sectional shape, and an airfoil cross-sectional shape;
The power module according to claim 4. the base includes a cross-sectional shape relative to a plane parallel to a surface of the base plate;
The cross-sectional shape comprises at least one of a square cross-sectional shape, a rectangular cross-sectional shape, a circular cross-sectional shape, an elliptical cross-sectional shape, and a symmetrical cross-sectional shape;
The power module according to claim 4. the plurality of pin fins including a base attached to the base plate, at least one surface extending away from the base plate and the base, and a termination surface connected to the at least one surface;
the at least one surface extends away from the base plate, the at least one surface narrowing as the at least one surface extends to the termination surface;
The power module according to claim 1 . 10. The power module of claim 1, wherein the plurality of pin fins are configured to increase output current capability by 5% to 40% compared to a non-directly cooled power module , and adjacent mountings of the plurality of pin fins are arranged parallel to a first axis or a second axis of the power module . 10. The power module of claim 1, wherein the plurality of pin fins are configured to provide a 15% increase in output current capability compared to a non-directly cooled power module , and adjacent mountings of the plurality of pin fins are oriented parallel to a first axis or a second axis of the power module. A system comprising the power module of claim 1, further comprising a cold plate. A system comprising the power module of claim 1, further comprising a cold plate and at least one of an inverter, a power system, a motor system, a converter, and an AC-DC power supply. A power module,
A base plate;
At least one power board disposed on the base plate;
a housing disposed on the at least one power board;
a first terminal electrically connected to the at least one power board;
A second terminal;
a third terminal electrically connected to the at least one power board;
a plurality of power devices electrically connected to the at least one power substrate;
a gate-source board electrically connected to the plurality of power devices;
a plurality of pin fins disposed on a bottom surface of the base plate, the pin fins configured to provide direct cooling to the power module, the pin fins having an airfoil-shaped cross-sectional shape and/or an airfoil-shaped cross-sectional shape;
Equipped with
the plurality of pin fins include a base and a terminal surface, the base having a cross-sectional shape different from a cross-sectional shape of the terminal surface;
Power module. the plurality of pin fins are disposed on a bottom surface of the base plate;
the plurality of pin fins are constructed and arranged to form flow channels between the plurality of pin fins;
the flow path is parallel to a first axis and a second axis of the power module;
13. The power module according to claim 12. 13. The power module of claim 12, wherein each pin fin of the plurality of pin fins is integrally formed with the base plate and comprises the same material as the base plate , and adjacent mountings of the plurality of pin fins are oriented parallel to a first axis or a second axis of the power module . 13. The power module of claim 12, wherein the plurality of pin fins include the base , the end face , and one or more surfaces, the one or more surfaces extending from the base to the end face. the termination surface includes a cross-sectional shape relative to a plane parallel to a surface of the base plate;
the cross-sectional shape comprises at least one of an asymmetric cross-sectional shape, an airfoil cross-sectional shape, and an airfoil cross-sectional shape;
16. The power module according to claim 15. the base includes a cross-sectional shape relative to a plane parallel to a surface of the base plate;
The cross-sectional shape comprises at least one of a square cross-sectional shape, a rectangular cross-sectional shape, a circular cross-sectional shape, an elliptical cross-sectional shape, and a symmetrical cross-sectional shape;
16. The power module according to claim 15. the plurality of pin fins include a cross-sectional shape with respect to a plane parallel to a surface of the base plate;
the cross-sectional shape comprises at least one of a contoured cross-sectional shape, a circular cross-sectional shape, a square cross-sectional shape, and a rectangular cross-sectional shape;
13. The power module according to claim 12. the plurality of pin fins including a base attached to the base plate, at least one surface extending away from the base plate and the base, and a termination surface connected to the at least one surface;
the at least one surface extends away from the base plate, the at least one surface narrowing as it extends to the termination surface;
13. The power module according to claim 12. 13. The power module of claim 12, wherein the plurality of pin fins are configured to increase output current capability by 5% to 40% compared to a non-directly cooled power module , and adjacent mountings of the plurality of pin fins are arranged parallel to a first axis or a second axis of the power module . 13. The power module of claim 12, wherein the plurality of pin fins are configured to provide a 15% increase in output current capability compared to a non-directly cooled power module , and adjacent mountings of the plurality of pin fins are oriented parallel to a first axis or a second axis of the power module. A system comprising the power module of claim 12, further comprising a cold plate. A system comprising the power module of claim 12, further comprising a cold plate and at least one of an inverter, a power system, a motor system, a converter, and an AC-DC power supply. 1. A method of configuring a power module, comprising:
providing at least one power substrate;
disposing a housing on the at least one power board;
electrically connecting a first terminal to the at least one power board;
providing a second terminal;
electrically connecting a third terminal to the at least one power board;
electrically connecting a plurality of power devices to the at least one power substrate;
providing a gate-source board electrically connected to the plurality of power devices;
Including,
the gate-source board is configured to receive at least one electrical signal, the method further comprising:
Providing a base plate;
disposing the at least one power board on the base plate;
providing a plurality of pin fins disposed on a bottom surface of the base plate, the pin fins having an airfoil-shaped cross-sectional shape and/or an airfoil-shaped cross-sectional shape; and configuring the plurality of pin fins to cool at least one component of the power module.
Including ,
the plurality of pin fins include a base and a terminal surface, the base having a cross-sectional shape different from a cross-sectional shape of the terminal surface;
How to configure a power module. configuring the plurality of pin fins to provide direct cooling to the power module;
disposing the plurality of pin fins on a bottom surface of the base plate;
Arranging the pin fins to form flow paths between the pin fins;
Further comprising :
the flow path is parallel to a first axis and a second axis of the power module;
25. A method of constructing a power module according to claim 24. 25. The method of constructing a power module of claim 24, further comprising: configuring the plurality of pin fins to include the base, the termination face , and one or more surfaces, the one or more surfaces extending from the base to the termination face. the termination surface includes a cross-sectional shape relative to a plane parallel to a surface of the base plate;
the cross-sectional shape comprises at least one of an asymmetric cross-sectional shape, an airfoil cross-sectional shape, and an airfoil cross-sectional shape;
27. A method of constructing the power module of claim 26. the base includes a cross-sectional shape relative to a plane parallel to a surface of the base plate;
The cross-sectional shape comprises at least one of a square cross-sectional shape, a rectangular cross-sectional shape, a circular cross-sectional shape, an elliptical cross-sectional shape, and a symmetrical cross-sectional shape;
27. A method of constructing the power module of claim 26. 27. The method of claim 26, wherein the plurality of pin fins are configured to increase output current capability by 5% to 40% compared to a non-directly cooled power module , and adjacent mountings of the plurality of pin fins are oriented parallel to a first axis or a second axis of the power module . 27. The method of configuring a power module of claim 26, wherein the plurality of pin fins are configured to provide a 15% increase in output current capability compared to a non-directly cooled power module , and adjacent mountings of the plurality of pin fins are oriented parallel to a first axis or a second axis of the power module. 25. A method of configuring and testing a power module, comprising the method of configuring a power module of claim 24, comprising the steps of :
Providing a power module arrangement and disposing the power module comprising the power module arrangement;
providing the power module configuration comprising at least one component including at least one of at least one bus bar, a driver, a controller, at least one capacitor, a cold plate, and at least one sensor;
disposing a component housing to receive and enclose said power module and said at least one component;
operating the power module and the at least one component using the power module configuration;
Measuring at least one operating parameter of the power module assembly;
outputting the at least one operating parameter from the power module assembly;
The method of configuring and testing a power module further comprises: The method of configuring and testing a power module according to claim 31, wherein the power module configuration comprises at least one of an inverter, a power system, a motor system, and a charging system. Providing the power module comprises:
at least one power board;
a housing disposed on the at least one power board;
a first terminal electrically connected to the at least one power board;
A second terminal;
a plurality of power devices electrically connected to the at least one power substrate;
providing
the power module being constructed, arranged and configured to increase the switching speed of the power module;
The switching speed of the power module is less than 100 (A/ns);
32. A method of constructing and testing a power module according to claim 31. Providing the power module comprises:
at least one power board;
a housing disposed on the at least one power board;
a first terminal electrically connected to the at least one power board;
A second terminal;
a plurality of power devices electrically connected to the at least one power substrate;
providing
the power module being constructed, arranged and configured to increase the switching speed of the power module;
The switching speed of the power module is less than 80 (V/ns);
32. A method of constructing and testing a power module according to claim 31. and exchanging data with at least one of the driver, the controller, and the at least one sensor through an electrical interface;
the at least one component comprises the at least one bus bar, the driver, the controller, the at least one capacitor, the cold plate, and the at least one sensor;
32. A method of constructing and testing a power module according to claim 31. testing an embodiment of the power module for a particular application using the power module configuration;
the particular application comprises at least one of an inverter, a power system, a motor system, and a charging system;
32. A method of constructing and testing a power module according to claim 31. connecting to at least one of the driver, the controller and the at least one sensor through an electrical interface;
Testing an embodiment of the power module for a particular application using the power module configuration;
Further comprising:
the particular application comprises at least one of an inverter, a power system, a motor system, and a charging system;
32. A method of constructing and testing a power module according to claim 31. 32. The method of claim 31, further comprising moving air through the component housing with a cooling fan. A test structure configured to test a power module structure comprising the power module of claim 1, comprising:
a power module assembly including the power module;
the power module configuration further comprising at least one component comprising at least one of at least one bus bar, a driver, a controller, at least one capacitor, a cold plate, and at least one sensor;
an assembly housing for containing and enclosing the power module and the at least one component;
a power module assembly configured to operate the power module and the at least one component;
a power module component configured to measure at least one operating parameter of the power module component;
a power module component configured to output the at least one operating parameter from the power module component;
A test configuration comprising: The power module comprises:
at least one power board;
a housing disposed on the at least one power board;
a first terminal electrically connected to the at least one power board;
A second terminal;
a third terminal electrically connected to the at least one power board;
a plurality of power devices electrically connected to the at least one power substrate;
At least one of the following:
the power module being constructed, arranged and configured to increase the switching speed of the power module;
The switching speed of the power module is less than 100 (A/ns);
40. The test construct of claim 39. The test structure of claim 40, wherein the switching speed of the power module is less than 80 (V/ns). The power module comprises:
at least one power board;
a housing disposed on the at least one power board;
a first terminal electrically connected to the at least one power board;
A second terminal;
a plurality of power devices electrically connected to the at least one power substrate;
Equipped with
the power module being constructed, arranged and configured to increase the switching speed of the power module;
The switching speed of the power module is less than 100 (A/ns);
40. The test construct of claim 39. The test arrangement of claim 39, further comprising an electrical interface connected to at least one of the driver, the controller, and the at least one sensor and configured to exchange data with at least one of the driver, the controller, and the at least one sensor. the power module assembly is configured to test an embodiment of the power module for a particular application;
the particular application comprises at least one of an inverter, a power system, a motor system, and a charging system;
40. The test construct of claim 39. connecting to at least one of the driver, the controller and the at least one sensor through an electrical interface;
Testing an embodiment of the power module for a particular application using the configuration;
40. The test construct of claim 39, further comprising: The test arrangement of claim 39, further comprising a cooling fan configured to move air through the arrangement housing. the power module is constructed, arranged and configured to reduce a height of the power module;
The height of the power module is in the range of 7 mm to 30 mm.
The power module according to claim 1 . The power module of claim 47, wherein the height of the power module is in the range of 9 mm to 11 mm. The power module of claim 47, wherein the height of the power module is in the range of 15 mm to 17 mm. The power module of claim 47, wherein the height of the power module is in the range of 23 mm to 27 mm. the first terminal includes a contact surface located at a first height above the housing;
the second terminal includes a contact surface located at a second height above the housing, the second height being different from the first height;
48. A power module according to claim 47. The power module of claim 47, wherein the total stray inductance value of the critical power switching loop of the power module is in the range of 12 (nH) to 2 (nH). the power module is constructed, arranged and configured to increase terminal utilization of the power module;
the terminal utilization ratio includes a base ratio including a total contact width of the terminal to a width of a power module base;
The base ratio is in the range of 70% to 95%.
The power module according to claim 1 . The power module of claim 53, wherein the base ratio is in the range of 70% to 80%. The power module of claim 53, wherein the base ratio is in the range of 80% to 90%. The power module of claim 53, wherein the base ratio is in the range of 90% to 95%. The power module of claim 53, wherein the width of the power module base includes the width of the at least one conductive power substrate. the first terminal includes a contact surface located at a first height above the housing ;
the second terminal includes a contact surface located at a second height above the housing, the second height being different from the first height;
54. A power module according to claim 53. The power module of claim 53, wherein the total stray inductance value of the critical power switching loop of the power module is in the range of 12 (nH) to 2 (nH). the power module is constructed, arranged and configured to increase a terminal area of the power module;
The terminal area includes a terminal area ratio including a total contact area to a total power module area, the terminal area ratio having a range of 15% to 50%.
The power module according to claim 1 . The power module of claim 60, wherein the terminal area ratio is in the range of 20% to 40%. The power module of claim 61, wherein the terminal area ratio is in the range of 20% to 25%. The power module of claim 61, wherein the terminal area ratio is in the range of 25% to 30%. The power module of claim 61, wherein the terminal area ratio is in the range of 30% to 35%. the first terminal includes a contact surface located at a first height above the housing;
the second terminal includes a contact surface located at a second height above the housing, the second height being different from the first height;
61. The power module of claim 60. The power module of claim 60, wherein the total stray inductance value of the critical power switching loop of the power module is in the range of 12 (nH) to 2 (nH). The power module of claim 1, wherein the power module is constructed, arranged and configured to have switching losses in the range of 0.5 (mJ/A) to 0.25 (mJ/A).

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