JP7667136B2 - Sheet for manufacturing semiconductor device, method for manufacturing sheet for manufacturing semiconductor device, and method for manufacturing semiconductor chip with film-like adhesive - Google Patents

Description

The present invention relates to a sheet for manufacturing a semiconductor device, a method for manufacturing the sheet for manufacturing a semiconductor device, and a method for manufacturing a semiconductor chip with a film-like adhesive.
This application claims priority based on Japanese Patent Application No. 2020-058734, filed in Japan on March 27, 2020, the contents of which are incorporated herein by reference.

When manufacturing a semiconductor device, a semiconductor chip with a film-like adhesive is used, which includes a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip.
An example of a method for producing a semiconductor chip with a film-like adhesive is shown below.

That is, first, a dicing die bonding sheet is attached to the back surface of a semiconductor wafer.
The dicing die bonding sheet may, for example, be one that includes a support sheet and a film-like adhesive provided on one side of the support sheet, and the support sheet can be used as a dicing sheet. There are several types of support sheets with different configurations, such as one that includes a substrate and an adhesive layer provided on one side of the substrate, and one that consists of a substrate only. In the support sheet that includes an adhesive layer, the outermost surface on the adhesive layer side is the surface on which the film-like adhesive is provided. The dicing die bonding sheet is attached to the back side of the semiconductor wafer by the film-like adhesive therein.

Next, the semiconductor wafer and the film-like adhesive on the support sheet are both cut by blade dicing. "Cutting" the semiconductor wafer is also called "splitting," and this separates the semiconductor wafer into the desired semiconductor chips. The film-like adhesive is cut along the outer periphery of the semiconductor chip. This results in a semiconductor chip with a film-like adhesive, which includes a semiconductor chip and the cut film-like adhesive provided on its back surface, and also results in a group of semiconductor chips with a film-like adhesive, which are configured by holding a plurality of these semiconductor chips with a film-like adhesive in an aligned state on the support sheet.

Next, the semiconductor chip with the film-like adhesive is peeled off from the support sheet and picked up. If a support sheet with a curable adhesive layer is used, the adhesive layer is cured at this time to reduce the adhesiveness, which makes picking up easier.
In this manner, a semiconductor chip with a film-like adhesive for use in manufacturing a semiconductor device is obtained.

Another example of the method for producing a semiconductor chip with a film-like adhesive is shown below.
That is, first, a backgrind tape (sometimes called a "surface protection tape") is applied to the circuit-forming surface of a semiconductor wafer.
Next, a portion to be divided is set inside the semiconductor wafer, and a laser beam is irradiated so as to focus on the area included in the portion, forming a modified layer inside the semiconductor wafer. Next, the thickness of the semiconductor wafer is adjusted to a desired value by grinding the back surface of the semiconductor wafer using a grinder, and the force applied to the semiconductor wafer during grinding at this time is used to divide (single) the semiconductor wafer at the portion where the modified layer is formed, and a plurality of semiconductor chips are produced. This method of dividing a semiconductor wafer with the formation of a modified layer is called stealth dicing (registered trademark), and is essentially completely different from laser dicing, which cuts the semiconductor wafer from its surface while scraping off the semiconductor wafer at the irradiated portion by irradiating the semiconductor wafer with laser light.

Next, a die bonding sheet is attached to the backside (in other words, the ground surface) of all of these semiconductor chips fixed on the backgrind tape after the above-mentioned grinding. Examples of die bonding sheets include those similar to the dicing die bonding sheet described above. In this way, it may be possible to design the die bonding sheet to have a similar configuration to the dicing die bonding sheet, but simply not use it when dicing the semiconductor wafer. The die bonding sheet is also attached to the backside of the semiconductor chip by the film-like adhesive therein.

Next, after removing the backgrind tape from the semiconductor chip, the die bonding sheet is stretched in a direction parallel to its surface (e.g., the surface of the film-like adhesive that is attached to the semiconductor chip) while being cooled, a process known as expanding (cool expanding), thereby cutting the film-like adhesive along the outer periphery of the semiconductor chip.
By the above steps, a semiconductor chip with a film-like adhesive is obtained, which includes a semiconductor chip and the cut film-like adhesive provided on the back surface of the semiconductor chip.

Next, in the same manner as in the case of using the blade dicing described above, the semiconductor chip with the film-like adhesive is separated from the support sheet and picked up to obtain a semiconductor chip with the film-like adhesive for use in manufacturing a semiconductor device.

Both dicing die bonding sheets and die bonding sheets can be used to manufacture semiconductor chips with film-like adhesive, ultimately enabling the manufacture of the desired semiconductor device. In this specification, dicing die bonding sheets and die bonding sheets are collectively referred to as "semiconductor device manufacturing sheets."

As a sheet for manufacturing semiconductor devices, for example, a dicing die bonding tape (corresponding to the dicing die bonding sheet) having a structure in which a base layer (corresponding to the support sheet) and an adhesive layer (corresponding to the film-like adhesive) are laminated in direct contact has been disclosed (see Patent Document 1). In this dicing die bonding tape, the 90-degree peel strength of the base layer and adhesive layer at -15°C is adjusted to a specific range, so that the adhesive layer can be accurately separated by expanding, and since the 90-degree peel strength of the base layer and adhesive layer at 23°C is adjusted to a specific range, when this dicing die bonding tape is used, a semiconductor chip with an adhesive layer (corresponding to the semiconductor chip with the film-like adhesive) can be picked up without difficulty, and peeling of the semiconductor wafer and the semiconductor chip from the adhesive layer can be suppressed during the process of picking up.

Japanese Patent Application Publication No. 2018-56289

On the other hand, if the support sheet in the semiconductor device manufacturing sheet includes the base material and the adhesive layer, and further, if the adhesive layer or the film-like adhesive contains a component that is liquid at room temperature, the liquid component may migrate between the adhesive layer and the film-like adhesive in the semiconductor device manufacturing sheet. If such migration occurs, either or both of the adhesive layer and the film-like adhesive will not be able to function normally. And the dicing die bonding tape disclosed in Patent Document 1 does not include an adhesive layer.

The present invention aims to provide a sheet for manufacturing semiconductor device, which comprises a substrate, an adhesive layer, and a film-like adhesive, and in which even if the adhesive layer or the film-like adhesive contains a liquid component, the transfer of liquid components between the adhesive layer and the film-like adhesive is suppressed.

The present invention provides a film-like adhesive comprising a substrate, a pressure-sensitive adhesive layer, an intermediate layer, and a film-like adhesive, the pressure-sensitive adhesive layer, the intermediate layer, and the film-like adhesive being laminated in this order on the substrate, the intermediate layer containing a non-silicon-based resin (β1) having a weight average molecular weight of 20,000 to 100,000 as a main component, and further comprising at least one of a component (α2) and a component (γ2) which is liquid at a temperature of 23° C. and reacts with the main component contained in the film-like adhesive. the component (γ2) is liquid at a temperature of 23° C. and does not have a functional group that reacts with a main component contained in the pressure-sensitive adhesive layer; the haze of a first test piece in a film shape having a thickness of 10 μm and made of the non-silicon-based resin (β1) is H(β); and in the case where the film-like adhesive contains the component (α2), the haze of a second test piece in a film shape having a thickness of 10 μm and made of a mixture of 100 parts by mass of the non-silicon-based resin (β1) and 10 parts by mass of the component (α2) is H(βα), the H(βα) and H(β) can be calculated by the following formula (X1):
(X1) H(βα)-H(β)>7%
When the pressure-sensitive adhesive layer contains the component (γ2), when the haze of a film-like third test piece having a thickness of 10 μm and made of a mixture of 100 parts by mass of the non-silicon-based resin (β1) and 10 parts by mass of the component (γ2) is H(βγ), the H(βγ) and H(β) can be expressed by the following formula (X2):
(X2) H(βγ)-H(β)>7%
The present invention provides a sheet for manufacturing semiconductor device that satisfies the above requirements.

In the sheet for manufacturing semiconductor device of the present invention, further, at least the film-like adhesive contains as a main component a component (α1) that is solid at a temperature of 23° C., or the pressure-sensitive adhesive layer contains as a main component a component (γ1) that is solid at a temperature of 23° C., and the component (α1) and the component (γ1) may be an acrylic resin having a structural unit derived from a (meth)acrylic acid ester.
In the sheet for manufacturing a semiconductor device of the present invention, the intermediate layer may contain, as the non-silicon-based resin (β1), one or more selected from the group consisting of ethylene-vinyl acetate copolymers and polyolefins.
In the sheet for manufacturing semiconductor device of the present invention, the intermediate layer may contain an ethylene-vinyl acetate copolymer as the non-silicon-based resin (β1), and in the ethylene-vinyl acetate copolymer, the ratio of the mass of structural units derived from vinyl acetate to the total mass of all structural units may be 30 mass% or less.
The sheet for manufacturing semiconductor device of the present invention may be one for cutting the film-like adhesive by cooling and expanding the film-like adhesive.

The present invention provides a method for manufacturing a sheet for manufacturing a semiconductor device, the method comprising either or both of a film-like adhesive preparation process for preparing the film-like adhesive containing the component (α2) and an adhesive layer preparation process for preparing the adhesive layer containing the component (γ2).

The present invention provides a method for manufacturing a semiconductor chip with a film-like adhesive using the semiconductor device manufacturing sheet, the semiconductor chip with the film-like adhesive comprising a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip, the manufacturing method comprising the steps of: attaching the film-like adhesive in the semiconductor device manufacturing sheet to the back surface of a semiconductor wafer while heating the semiconductor device manufacturing sheet; cutting the semiconductor wafer to which the film-like adhesive has been attached from the circuit formation surface side across the entire thickness direction to divide the semiconductor chip; and cutting the semiconductor device manufacturing sheet in the thickness direction from the film-like adhesive side to a region halfway through the intermediate layer to cut the film-like adhesive but not to the adhesive layer to obtain a group of semiconductor chips with a film-like adhesive in which a plurality of the semiconductor chips with the film-like adhesive are aligned on the intermediate layer; and removing the semiconductor chip with the film-like adhesive from the intermediate layer and picking it up.

The present invention relates to a method for manufacturing a semiconductor chip with a film-like adhesive using the semiconductor device manufacturing sheet, the semiconductor chip with a film-like adhesive comprising a semiconductor chip and a film-like adhesive provided on the back surface of the semiconductor chip, and the manufacturing method includes a step of forming a modified layer inside the semiconductor wafer by irradiating a laser beam so as to be focused on a focal point set inside the semiconductor wafer, and a step of grinding the back surface of the semiconductor wafer after the modified layer is formed, and dividing the semiconductor wafer at the portion where the modified layer is formed by utilizing the grinding force applied to the semiconductor wafer, thereby obtaining a group of semiconductor chips in a state in which a plurality of the semiconductor chips are aligned. the step of heating the semiconductor device manufacturing sheet while attaching the film-like adhesive thereto to the backsides of all of the semiconductor chips in the group of semiconductor chips; the step of cooling the semiconductor device manufacturing sheet after attachment to the semiconductor chips and stretching it in a direction parallel to its front surface while cooling the sheet to cut the film-like adhesive along the periphery of the semiconductor chips to obtain a group of semiconductor chips with film-like adhesive in which a plurality of the semiconductor chips with the film-like adhesive are aligned on the intermediate layer; and the step of separating the semiconductor chips with the film-like adhesive from the intermediate layer and picking them up.

According to the present invention, there is provided a sheet for manufacturing semiconductor device, which comprises a substrate, an adhesive layer, and a film-like adhesive, and in which even if the adhesive layer or the film-like adhesive contains a liquid component, migration of the liquid component between the adhesive layer and the film-like adhesive is suppressed.

1 is a cross-sectional view that illustrates a schematic diagram of a sheet for manufacturing a semiconductor device according to one embodiment of the present invention. FIG. 2 is a plan view of the semiconductor device manufacturing sheet shown in FIG. 1 . 1A to 1C are cross-sectional views for illustrating a schematic example of a method for producing a semiconductor chip with a film-like adhesive according to an embodiment of the present invention. 1A to 1C are cross-sectional views for illustrating a schematic example of a method for producing a semiconductor chip with a film-like adhesive according to an embodiment of the present invention. 1A to 1C are cross-sectional views for illustrating a schematic example of a method for producing a semiconductor chip with a film-like adhesive according to an embodiment of the present invention. 1A to 1C are cross-sectional views for illustrating an example of a method for manufacturing a semiconductor chip. 1A to 1C are cross-sectional views for illustrating an example of a method for manufacturing a semiconductor chip. 1A to 1C are cross-sectional views for illustrating an example of a method for manufacturing a semiconductor chip. 10A to 10C are cross-sectional views for illustrating a schematic diagram of another example of a method for producing a semiconductor chip with a film-like adhesive according to one embodiment of the present invention. 10A to 10C are cross-sectional views for illustrating a schematic diagram of another example of a method for producing a semiconductor chip with a film-like adhesive according to one embodiment of the present invention. 10A to 10C are cross-sectional views for illustrating a schematic diagram of another example of a method for producing a semiconductor chip with a film-like adhesive according to one embodiment of the present invention.

◇Sheet for manufacturing semiconductor device A sheet for manufacturing semiconductor device according to one embodiment of the present invention comprises a substrate, a pressure-sensitive adhesive layer, an intermediate layer, and a film-like adhesive, and is configured by laminating the pressure-sensitive adhesive layer, the intermediate layer, and the film-like adhesive on the substrate in this order, and the intermediate layer contains a non-silicon-based resin (β1) having a weight average molecular weight of 20,000 to 100,000 as a main component (sometimes simply referred to as "non-silicon-based resin (β1)" in this specification), and further, at least the film-like adhesive contains a component (α2) or the pressure-sensitive adhesive layer contains a component (γ2), and the component (α2) is a component that is liquid at a temperature of 23°C. and has no functional group that reacts with the main component contained in the film-like adhesive, the component (γ2) is liquid at a temperature of 23° C. and has no functional group that reacts with the main component contained in the pressure-sensitive adhesive layer, and when the haze of a first test piece in a film shape having a thickness of 10 μm and made of the non-silicon-based resin (β1) is H(β), and when the film-like adhesive contains the component (α2), the haze of a second test piece in a film shape having a thickness of 10 μm and made of a mixture of 100 parts by mass of the non-silicon-based resin (β1) and 10 parts by mass of the component (α2) is H(βα), the H(βα) and H(β) can be expressed by the following formula (X1):
(X1) H(βα)-H(β)>7%
When the pressure-sensitive adhesive layer contains the component (γ2), when the haze of a film-like third test piece having a thickness of 10 μm and made of a mixture of 100 parts by mass of the non-silicon-based resin (β1) and 10 parts by mass of the component (γ2) is H(βγ), the H(βγ) and H(β) can be expressed by the following formula (X2):
(X2) H(βγ)-H(β)>7%
Meet the following.

Examples of the sheet for manufacturing semiconductor device in this embodiment include a sheet for manufacturing semiconductor device in which the intermediate layer contains the non-silicon resin (β1) as a main component, the film-like adhesive contains the component (α2), and the pressure-sensitive adhesive layer does not contain the component (γ2); a sheet for manufacturing semiconductor device in which the intermediate layer contains the non-silicon resin (β1) as a main component, the pressure-sensitive adhesive layer contains the component (γ2), and the film-like adhesive does not contain the component (α2); and a sheet for manufacturing semiconductor device in which the intermediate layer contains the non-silicon resin (β1) as a main component, the film-like adhesive contains the component (α2), and the pressure-sensitive adhesive layer contains the component (γ2).

In the semiconductor device manufacturing sheet of this embodiment, when the film-like adhesive contains the component (α2), regardless of whether the pressure-sensitive adhesive layer contains the component (γ2), the H(βα) and H(β) satisfy the formula (X1). In such a semiconductor device manufacturing sheet, it can be determined that the compatibility between the component (α2) and the non-silicon-based resin (β1) is low, and the migration of the component (α2) in the film-like adhesive to the intermediate layer is suppressed, and as a result, the migration of the component (α2) in the film-like adhesive to the pressure-sensitive adhesive layer is suppressed.
On the other hand, in the semiconductor device manufacturing sheet of this embodiment, when the pressure-sensitive adhesive layer contains the component (γ2), regardless of whether the film-like adhesive contains the component (α2), the H(βγ) and H(β) satisfy the formula (X2). In such a semiconductor device manufacturing sheet, it can be determined that the compatibility between the component (γ2) and the non-silicon-based resin (β1) is low, and the migration of the component (γ2) in the pressure-sensitive adhesive layer to the intermediate layer is suppressed, and as a result, the migration of the component (γ2) in the pressure-sensitive adhesive layer to the film-like adhesive is suppressed.
That is, in the sheet for manufacturing a semiconductor device of this embodiment, the intermediate layer functions as a layer for suppressing the migration of the component (α2) and the component (γ2).

In the sheet for producing semiconductor device of this embodiment, the effect of suppressing migration of the component (α2) in the film-like adhesive to the pressure-sensitive adhesive layer can be confirmed, for example, by the following method.
That is, the semiconductor device manufacturing sheet is aged by being left stationary for a certain period of time under high temperature conditions, and the aged semiconductor device manufacturing sheet is used to produce a group of semiconductor chips with a film-like adhesive (e.g., a group of silicon chips with a film-like adhesive) in which a large number of semiconductor chips with a film-like adhesive are aligned and fixed on an intermediate layer in a laminated sheet by the film-like adhesive therein, by the method described below. Here, the "laminated sheet" refers to a laminate having a configuration in which a base material, a pressure-sensitive adhesive layer, and an intermediate layer are laminated in this order in the thickness direction. Then, the force required to peel the semiconductor chips with the film-like adhesive from the intermediate layer in the laminated sheet is measured, and this is adopted as the aged pick-up force of the semiconductor chips with the film-like adhesive.
On the other hand, using a sheet for manufacturing semiconductor device that has not been aged (before aging), the force required to peel a semiconductor chip with a film-like adhesive from the intermediate layer in the laminated sheet is measured in a similar manner, and this is used as the unaged pick-up force of the semiconductor chip with a film-like adhesive.
Furthermore, if there is no difference between the pick-up force of a semiconductor chip with a film-like adhesive with and without aging, or if there is a difference but the difference is extremely minor, it can be determined that no significant change has occurred in the composition of the film-like adhesive even when the sheet for manufacturing semiconductor device is aged, and that the sheet for manufacturing semiconductor device has the effect of suppressing the migration of component (α2) in the film-like adhesive to the adhesive layer.

In the semiconductor device manufacturing sheet of this embodiment, the effect of suppressing the migration of component (γ2) in the adhesive layer to the film-like adhesive can be confirmed by the following method, for example, when component (γ2) is an antistatic agent.
That is, in the same manner as above, the semiconductor device manufacturing sheet is aged by being left to stand for a certain period of time under high temperature conditions, and the film-like adhesive is peeled off from the intermediate layer in the aged semiconductor device manufacturing sheet to prepare a test piece of the film-like adhesive. This test piece is then left to stand for a certain period of time under conditions of constant temperature and relative humidity (for example, a temperature of 23° C. and a relative humidity of 50%) to condition the humidity, and the surface resistivity of the exposed surface of the film-like adhesive that was the intermediate layer side after this humidity conditioning is then measured, and this is used as the aged surface resistivity of the film-like adhesive.
On the other hand, using a sheet for manufacturing semiconductor device that has not been aged (before aging), the surface resistivity of the exposed surface that was the intermediate layer side of the film-like adhesive is measured in the same manner, and this is used as the surface resistivity of the film-like adhesive without aging.
Furthermore, if there is no difference (more specifically, a decrease) between the surface resistivity of the film-like adhesive with and without aging, or if there is a difference but the degree of difference is extremely minor, it can be determined that no significant change has occurred in the composition of the adhesive layer containing the antistatic agent even when the sheet for manufacturing semiconductor device has been aged, and it can be determined that the sheet for manufacturing semiconductor device has the effect of suppressing the migration of the component (γ2) in the adhesive layer to the film-like adhesive.
When component (γ2) is a component other than an antistatic agent, for example, if the physical properties of the adhesive layer reflecting the presence of that component do not differ depending on whether or not the adhesive layer has aged, or if a difference is observed but the degree of difference is extremely minor, then it can be determined that the sheet for manufacturing semiconductor device has the effect of suppressing the migration of component (γ2) in the adhesive layer to the film-like adhesive.

In this specification, the term "main component" does not necessarily mean the non-silicon-based resin (β1) in the intermediate layer described above, but means the component whose content (parts by mass) is the largest in the layer (film) containing that component, and whose weight average molecular weight is 20,000 or more. For example, in the intermediate layer, the content (parts by mass) of the non-silicon-based resin (β1) is the largest among all the components, and the weight average molecular weight of the non-silicon-based resin (β1) is 20,000 or more.

In this specification, components that are liquid at a temperature of 23°C, such as component (α2) and component (γ2), may be referred to simply as "liquid components."

The first test piece, the second test piece and the third test piece are all in the form of a film having a thickness of 10 μm, and, for example, their overall shape is not particularly limited as long as it is possible to measure the haze.

In this specification, "thickness" does not apply only to the first to third test pieces, but unless otherwise specified, means the average thickness measured at five randomly selected points on the object, and can be obtained using a constant pressure thickness gauge in accordance with JIS K7130.

H(β), H(βα) and H(βγ) can all be measured in accordance with JIS K 7136:2000.

The H(β) is not particularly limited as long as it satisfies the formulae (X1) and (X2).
H(β) may be, for example, any of 0.1 to 20%, 1 to 18%, and 2 to 15%, in which case the intermediate layer is easier to form.

The first test piece can be produced by preparing a first test composition containing the non-silicon resin (β1) and a solvent, applying the first test composition to the surface to be formed of the first test piece, and drying the composition. An example of the surface to be formed of the first test piece is the release-treated surface of a release film.

The first test piece is made of a non-silicon-based resin (β1). The first test piece contains only the non-silicon-based resin (β1) as a constituent component, or contains impurities other than the non-silicon-based resin (β1), but the amount of impurities is so small that it does not change the physical properties of the first test piece, and the first test piece can be considered to contain substantially only the non-silicon-based resin (β1). For example, the ratio of the content of the non-silicon-based resin (β1) in the first test piece to the total mass of the first test piece may be 99 mass% or more.

The H(βα) is not particularly limited as long as it satisfies the formula (X1).
H(βα) may be, for example, any of 8 to 80%, 10 to 75%, and 12 to 70%, in that it is easier to form an intermediate layer and a film-like adhesive.

The second test piece can be produced by preparing a second test composition containing the non-silicon resin (β1), the component (α2), and a solvent, applying the second test composition to the target surface of the second test piece, and drying the composition. The target surface of the second test piece is the same as the target surface of the first test piece described above.
In the second test composition, it is preferable that the components are uniformly mixed, and by doing so, the second test piece can be prepared with the components uniformly mixed, and H(βα) can be measured with higher accuracy. To achieve this, when preparing the second test composition, all the components are mixed together and then thoroughly stirred by a known method.

The second test piece is composed of a mixture of 100 parts by mass of non-silicon-based resin (β1) and 10 parts by mass of component (α2). The second test piece contains only non-silicon-based resin (β1) and component (α2) as its constituent components, or contains impurities other than non-silicon-based resin (β1) and component (α2), but the content of the impurities is so small that it does not change the physical properties of the second test piece, and it can be considered that the second test piece contains only non-silicon-based resin (β1) and component (α2). For example, the ratio of the total content of non-silicon-based resin (β1) and component (α2) in the second test piece to the total mass of the second test piece may be 99% by mass or more.

The H(βγ) is not particularly limited as long as it satisfies the formula (X2).
H(βγ) may be, for example, any one of 8 to 80%, 10 to 75%, and 12 to 70%, in terms of ease of forming the intermediate layer and the pressure-sensitive adhesive layer.

The third test piece can be produced by preparing a third test composition containing the non-silicon resin (β1), the component (γ2), and a solvent, applying the third test composition to the target surface of the third test piece, and drying the composition. The target surface of the third test piece is the same as the target surface of the first test piece described above.
In the third test composition, it is preferable that the components are uniformly mixed, and by doing so, the third test piece can be prepared with the components uniformly mixed, and H(βγ) can be measured with higher accuracy. For this purpose, when preparing the third test composition, all the components are mixed together and then thoroughly stirred by a known method.

The third test piece is composed of a mixture of 100 parts by mass of non-silicon-based resin (β1) and 10 parts by mass of component (γ2). The third test piece contains only non-silicon-based resin (β1) and component (γ2) as its constituent components, or contains impurities other than non-silicon-based resin (β1) and component (γ2), but the content of the impurities is so small that it does not change the physical properties of the third test piece, and it can be considered that it essentially contains only non-silicon-based resin (β1) and component (γ2). For example, the ratio of the total content of non-silicon-based resin (β1) and component (γ2) in the third test piece to the total mass of the third test piece may be 99% by mass or more.

The H(βα)-H(β) may be more than 7%, but in order to further suppress the migration of component (α2) in the film-like adhesive to the pressure-sensitive adhesive layer, it is preferably 7.5% or more, and may be, for example, either 9% or more or 11% or more.
The upper limit of H(βα) - H(β) is not particularly limited. From the viewpoint of facilitating the formation of a film-like adhesive and an intermediate layer that satisfy the above formula (X1), H(βα) - H(β) is preferably 90% or less.
H(βα)-H(β) is, for example, preferably more than 7% and not more than 90% (7%<H(βα)-H(β)≦90%), and may be any of 7.5 to 90%, 9 to 90%, and 11 to 90%.

The H(βγ)-H(β) may be more than 7%, but in order to further suppress the migration of the component (γ2) in the pressure-sensitive adhesive layer to the film-like adhesive, it is preferably 7.5% or more, and may be, for example, either 9% or more or 11% or more.
The upper limit of H(βγ)-H(β) is not particularly limited. From the viewpoint of facilitating the formation of a pressure-sensitive adhesive layer and an intermediate layer that satisfy the formula (X2), H(βγ)-H(β) is preferably 90% or less.
H(βγ)-H(β) is, for example, preferably more than 7% and not more than 90% (7%<H(βγ)-H(β)≦90%), and may be any of 7.5 to 90%, 9 to 90%, and 11 to 90%.

When the semiconductor device manufacturing sheet of this embodiment is used as a dicing die bonding sheet and blade dicing is performed, the semiconductor device manufacturing sheet has the intermediate layer, which makes it easy to prevent the blade from reaching the substrate, and suppresses the generation of whisker-like cutting debris (also known as whiskers, hereinafter sometimes simply referred to as "cutting debris" and not limited to debris derived from the substrate) from the substrate. Furthermore, since the main component of the intermediate layer cut by the blade is a non-silicon-based resin (β1) with a weight average molecular weight of 20,000 to 100,000, and in particular, the weight average molecular weight is 100,000 or less, the generation of the cutting debris from the intermediate layer can also be suppressed.

On the other hand, when the semiconductor device manufacturing sheet of this embodiment is used as a die bonding sheet and dicing involving the formation of a modified layer on a semiconductor wafer (stealth dicing (registered trademark)) is performed, since the semiconductor device manufacturing sheet has the intermediate layer, the semiconductor device manufacturing sheet can be subsequently stretched in a direction parallel to its surface (for example, the surface of the film-like adhesive that is attached to the semiconductor chip), a so-called expanding process, so that the film-like adhesive can be cut accurately at the desired location and cutting defects can be suppressed.

In this way, the sheet for manufacturing semiconductor device of this embodiment can be imparted with properties that suppress the occurrence of defects when dividing semiconductor wafers, such as suppressing the generation of cutting debris from the base material and intermediate layer during blade dicing and suppressing poor cutting of the film-like adhesive during the expanding process, and can be made to have excellent suitability for dividing semiconductor wafers.

In this specification, unless otherwise specified, "weight average molecular weight" refers to a polystyrene-equivalent value measured by gel permeation chromatography (GPC).

The method of using the semiconductor device manufacturing sheet of this embodiment will be explained in detail later.

The semiconductor device manufacturing sheet of this embodiment will be described in detail below with reference to the drawings. Note that the drawings used in the following description may show enlarged essential parts for the sake of convenience in order to make the features of the present invention easier to understand, and the dimensional ratios of each component may not necessarily be the same as in reality.

FIG. 1 is a cross-sectional view that illustrates a semiconductor device manufacturing sheet according to one embodiment of the present invention, and FIG. 2 is a plan view of the semiconductor device manufacturing sheet illustrated in FIG.
In FIG. 2 and subsequent figures, the same components as those shown in the figures already described are given the same reference numerals as in the figures already described, and detailed description thereof will be omitted.

The semiconductor device manufacturing sheet 101 shown here comprises a base material 11, and is configured by laminating an adhesive layer 12, an intermediate layer 13, and a film-like adhesive 14, in that order, on the base material 11. The semiconductor device manufacturing sheet 101 further comprises a release film 15 on a surface 14a (hereinafter sometimes referred to as the "first surface") of the film-like adhesive 14 opposite the side on which the intermediate layer 13 is provided.

In the semiconductor device manufacturing sheet 101, an adhesive layer 12 is provided on one side (sometimes referred to as the "first side" in this specification) 11a of the substrate 11, an intermediate layer 13 is provided on the side (sometimes referred to as the "first side" in this specification) 12a of the adhesive layer 12 opposite the side on which the substrate 11 is provided, a film-like adhesive 14 is provided on the side (sometimes referred to as the "first side" in this specification) 13a of the intermediate layer 13 opposite the side on which the adhesive layer 12 is provided, and a release film 15 is provided on the first side 14a of the film-like adhesive 14. In this way, the semiconductor device manufacturing sheet 101 is configured by laminating the substrate 11, the adhesive layer 12, the intermediate layer 13, and the film-like adhesive 14 in this order in the thickness direction.

The semiconductor device manufacturing sheet 101 is used by removing the release film 15 and attaching the first surface 14a of the film-like adhesive 14 therein to the back surface of a semiconductor wafer, semiconductor chip, or a semiconductor wafer that has not been completely divided (not shown).

In this specification, for both semiconductor wafers and semiconductor chips, the surface on which the circuits are formed is referred to as the "circuit forming surface," and the surface opposite the circuit forming surface is referred to as the "rear surface."

In this specification, a laminate having a structure in which a base material and a pressure-sensitive adhesive layer are laminated in their thickness direction, and no intermediate layer is laminated, may be referred to as a "support sheet." In Figure 1, the support sheet is indicated by the reference numeral 1.
A laminate having a structure in which a substrate, a pressure-sensitive adhesive layer, and an intermediate layer are laminated in this order in the thickness direction may be referred to as a "laminate sheet". In Fig. 1, the laminate sheet is indicated by the reference numeral 10. The laminate of the support sheet and the intermediate layer is included in the laminate sheet.

When viewed from above, the intermediate layer 13 and the film-like adhesive 14 each have a circular planar shape, and the diameter of the intermediate layer 13 and the diameter of the film-like adhesive 14 are the same.
In the semiconductor device manufacturing sheet 101, the intermediate layer 13 and the film-like adhesive 14 are arranged so that their centers coincide, in other words, so that the positions of the outer periphery of the intermediate layer 13 and the film-like adhesive 14 both coincide in the radial direction.

The first surface 13a of the intermediate layer 13 and the first surface 14a of the film-like adhesive 14 are both smaller in area than the first surface 12a of the adhesive layer 12. The maximum value of the width W ₁₃ of the intermediate layer 13 (i.e., diameter) and the maximum value of the width W ₁₄ of the film-like adhesive 14 (i.e., diameter) are both smaller than the maximum value of the width of the adhesive layer 12 and the maximum value of the width of the base material 11. Therefore, in the semiconductor device manufacturing sheet 101, a part of the first surface 12a of the adhesive layer 12 is not covered by the intermediate layer 13 and the film-like adhesive 14. In such an area of the first surface 12a of the adhesive layer 12 where the intermediate layer 13 and the film-like adhesive 14 are not laminated, the release film 15 is laminated in direct contact therewith, and when the release film 15 is removed, this area is exposed (hereinafter, in this specification, this area may be referred to as the "non-laminated area").
In addition, in the semiconductor device manufacturing sheet 101 having a release film 15, the areas of the adhesive layer 12 that are not covered by the intermediate layer 13 and the film-like adhesive 14 may or may not have areas where the release film 15 is not laminated, as shown here.

The semiconductor device manufacturing sheet 101, in which the film-like adhesive 14 is not cut and is attached to the semiconductor wafer or semiconductor chip or the like by the film-like adhesive 14, can be fixed by attaching a part of the non-laminated region of the adhesive layer 12 therein to a jig such as a ring frame for fixing a semiconductor wafer. Therefore, there is no need to provide a separate jig adhesive layer on the semiconductor device manufacturing sheet 101 to fix the semiconductor device manufacturing sheet 101 to the jig. And because there is no need to provide a jig adhesive layer, the semiconductor device manufacturing sheet 101 can be manufactured inexpensively and efficiently.

In this way, the semiconductor device manufacturing sheet 101 has an advantageous effect by not having a jig adhesive layer, but may have a jig adhesive layer. In this case, the jig adhesive layer is provided in a region near the periphery of the surface of any of the layers constituting the semiconductor device manufacturing sheet 101. Examples of such a region include the non-laminated region on the first surface 12a of the adhesive layer 12.

The adhesive layer for the jig may be a known one, for example, a single-layer structure containing an adhesive component, or a multi-layer structure in which layers containing an adhesive component are laminated on both sides of a core sheet.

Furthermore, as described below, when the semiconductor device manufacturing sheet 101 is stretched in a direction parallel to its surface (e.g., the first surface 12a of the adhesive layer 12), that is, expanded, the presence of the non-laminated region on the first surface 12a of the adhesive layer 12 makes it easy to expand the semiconductor device manufacturing sheet 101. Not only can the film-like adhesive 14 be easily cut, but peeling of the intermediate layer 13 and the film-like adhesive 14 from the adhesive layer 12 can also be suppressed.

In the semiconductor device manufacturing sheet 101, the intermediate layer 13 contains a non-silicon-based resin (β1) having a weight average molecular weight of 20,000 to 100,000 as its main component.

The sheet for manufacturing semiconductor device of this embodiment is not limited to that shown in Figures 1 and 2, and some of the configurations shown in Figures 1 and 2 may be changed, deleted, or added within the scope that does not impair the effects of the present invention.

For example, the semiconductor device manufacturing sheet of this embodiment may include other layers that do not fall under any of the following: a substrate, an adhesive layer, an intermediate layer, a film-like adhesive, a release film, and a jig adhesive layer. However, it is preferable that the semiconductor device manufacturing sheet of this embodiment includes an adhesive layer in direct contact with the substrate, an intermediate layer in direct contact with the adhesive layer, and a film-like adhesive in direct contact with the intermediate layer, as shown in FIG. 1.

For example, in the semiconductor device manufacturing sheet of this embodiment, the planar shapes of the intermediate layer and the film-like adhesive may be shapes other than circular, and the planar shapes of the intermediate layer and the film-like adhesive may be the same as each other or different. In addition, the area of the first surface of the intermediate layer and the area of the first surface of the film-like adhesive are both preferably smaller than the area of the surface of the layer closer to the substrate than these (e.g., the first surface of the pressure-sensitive adhesive layer), and may be the same as each other or different. The positions of the outer circumferences of the intermediate layer and the film-like adhesive may or may not coincide in the radial direction.
Next, each layer constituting the sheet for manufacturing a semiconductor device of this embodiment will be described in more detail.

Substrate The substrate is in the form of a sheet or film.
The constituent material of the substrate is preferably various resins, and specific examples thereof include polyethylene (low-density polyethylene (LDPE), linear low-density polyethylene (LLDPE), high-density polyethylene (HDPE, etc.)), polypropylene (PP), polybutene, polybutadiene, polymethylpentene, styrene-ethylenebutylene-styrene block copolymer, polyvinyl chloride, vinyl chloride copolymer, polyethylene terephthalate (PET), polybutylene terephthalate (PBT), polyurethane, polyurethane acrylate, polyimide (PI), ionomer resin, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester copolymer, ethylene copolymers other than ethylene-(meth)acrylic acid copolymer and ethylene-(meth)acrylic acid ester copolymer, polystyrene, polycarbonate, fluororesin, water additives, modified products, crosslinked products, or copolymers of any of these resins, and the like.

In this specification, "(meth)acrylic acid" is a concept that includes both "acrylic acid" and "methacrylic acid." The same applies to terms similar to (meth)acrylic acid. For example, "(meth)acrylate" is a concept that includes both "acrylate" and "methacrylate," and "(meth)acryloyl group" is a concept that includes both "acryloyl group" and "methacryloyl group."

The resin constituting the base material may be of only one type, or of two or more types; if there are two or more types, the combination and ratio of these may be selected arbitrarily.

The substrate may be one layer (single layer) or two or more layers. When the substrate is made of multiple layers, the multiple layers may be the same or different from each other, and the combination of the multiple layers is not particularly limited as long as it does not impair the effects of the present invention.
In this specification, not only in the case of a substrate, "multiple layers may be the same or different from one another" means "all layers may be the same, all layers may be different, or only some layers may be the same", and further, "multiple layers are different from one another" means "at least one of the constituent materials and thicknesses of each layer is different from one another".

The thickness of the substrate can be appropriately selected depending on the purpose, but is preferably 50 to 300 μm, and more preferably 60 to 150 μm. When the thickness of the substrate is equal to or greater than the lower limit, the structure of the substrate is more stable. When the thickness of the substrate is equal to or less than the upper limit, the film-like adhesive can be cut more easily during blade dicing and the expansion of the sheet for manufacturing semiconductor device (film-like adhesive).
Here, the "thickness of the substrate" means the thickness of the entire substrate. For example, the thickness of a substrate consisting of multiple layers means the total thickness of all layers constituting the substrate.

In order to improve adhesion to other layers, such as a pressure-sensitive adhesive layer, provided thereon, the substrate may be subjected to a surface treatment such as a roughening treatment by sandblasting, solvent treatment, embossing, or an oxidation treatment, such as a corona discharge treatment, electron beam irradiation treatment, plasma treatment, ozone/ultraviolet radiation treatment, flame treatment, chromic acid treatment, or hot air treatment.
The surface of the substrate may be treated with a primer.
The substrate may have an antistatic coating layer; a layer that prevents the substrate from adhering to other sheets or to an adsorption table when the die bonding sheets are stacked and stored; or the like.

In addition to the main constituent materials such as the resin, the substrate may contain various known additives such as fillers, colorants, antistatic agents, antioxidants, organic lubricants, catalysts, and softeners (plasticizers).

The optical properties of the substrate are not particularly limited as long as they do not impair the effects of the present invention. The substrate may be, for example, transparent to laser light or energy rays.

The substrate can be manufactured by a known method. For example, a substrate containing a resin (having a resin as a constituent material) can be manufactured by molding the resin or a resin composition containing the resin.

Adhesive Layer The adhesive layer is in the form of a sheet or film, and contains an adhesive as a main component. The weight average molecular weight of the adhesive as a main component is 20,000 or more. The component having the largest content (parts by mass) in the adhesive layer is the adhesive as a main component.

The adhesive layer may or may not contain the component (γ2) in addition to the adhesive. The adhesive layer may or may not contain a component (γ1) that is solid at a temperature of 23°C as the main component (adhesive). When the component (γ1) is the main component (adhesive), the weight average molecular weight of the component (γ1) is 20,000 or more, and the component that is the maximum in the content (parts by mass) in the adhesive layer is the component (γ1).

The adhesive layer preferably contains the above-mentioned component (γ1), and may contain both component (γ1) and component (γ2), or may contain component (γ1) but not component (γ2).

The pressure-sensitive adhesive layer can be formed using a pressure-sensitive adhesive composition containing the pressure-sensitive adhesive and, if necessary, the component (γ2). For example, the pressure-sensitive adhesive composition can be applied to a surface on which the pressure-sensitive adhesive layer is to be formed, and then dried as necessary to form the pressure-sensitive adhesive layer at the desired site.
The ratio of the contents of the components that do not vaporize at room temperature in the pressure-sensitive adhesive composition is usually the same as the ratio of the contents of the components in the pressure-sensitive adhesive layer. In this specification, "room temperature" means a temperature that is not particularly cooled or heated, that is, an ordinary temperature, and examples of the temperature include a temperature of 15 to 25°C.

In the pressure-sensitive adhesive layer, the proportion of the total content of one or more components contained in the pressure-sensitive adhesive layer, which will be described later, relative to the total mass of the pressure-sensitive adhesive layer does not exceed 100 mass %.
Similarly, in the pressure-sensitive adhesive composition, the proportion of the total content of one or more components contained in the pressure-sensitive adhesive composition, which will be described later, relative to the total mass of the pressure-sensitive adhesive composition does not exceed 100 mass %.

The adhesive composition may be applied by known methods, such as using various coaters such as an air knife coater, blade coater, bar coater, gravure coater, roll coater, roll knife coater, curtain coater, die coater, knife coater, screen coater, Mayer bar coater, or kiss coater.

The drying conditions for the adhesive composition are not particularly limited, but when the adhesive composition contains a solvent as described below, it is preferable to heat dry it. In this case, it is preferable to dry it under conditions of, for example, 70 to 130°C for 10 seconds to 5 minutes.

Examples of the adhesive include adhesive resins such as acrylic resins, urethane resins, rubber-based resins, silicone resins, epoxy-based resins, polyvinyl ethers, polycarbonates, and ester-based resins, with acrylic resins being preferred.

When the adhesive layer contains component (γ1) as the main component (adhesive), it is preferable that component (γ1) is an acrylic resin having a structural unit derived from a (meth)acrylic acid ester.

In this specification, "adhesive resin" includes both resins that have adhesive properties and resins that have adhesive properties. For example, the adhesive resins include not only resins that are adhesive themselves, but also resins that become adhesive when used in combination with other components such as additives, and resins that become adhesive in the presence of a trigger such as heat or water.

The adhesive layer may be either curable or non-curable, for example, either energy ray curable or non-energy ray curable. The physical properties of the curable adhesive layer before and after curing can be easily adjusted.

In this specification, the term "energy rays" refers to electromagnetic waves or charged particle beams that have an energy quantum. Examples of energy rays include ultraviolet rays, radiation, and electron beams. Ultraviolet rays can be irradiated by using, for example, a high-pressure mercury lamp, a fusion lamp, a xenon lamp, a black light, or an LED lamp as an ultraviolet ray source. Electron beams can be irradiated by generating them using an electron beam accelerator or the like.
In this specification, the term "energy ray curable" means a property of being cured by irradiation with energy rays, and the term "non-energy ray curable" means a property of not being cured even when irradiated with energy rays.

The adhesive layer may consist of one layer (single layer) or may consist of two or more layers. If it consists of multiple layers, these multiple layers may be the same or different, and there are no particular limitations on the combination of these multiple layers.

The thickness of the pressure-sensitive adhesive layer is preferably from 1 to 100 μm, more preferably from 1 to 60 μm, and particularly preferably from 1 to 30 μm.
Here, "the thickness of the adhesive layer" means the thickness of the entire adhesive layer. For example, the thickness of an adhesive layer consisting of multiple layers means the total thickness of all layers that make up the adhesive layer.

The optical properties of the pressure-sensitive adhesive layer are not particularly limited as long as the effects of the present invention are not impaired. For example, the pressure-sensitive adhesive layer may transmit energy rays.
Next, the pressure-sensitive adhesive composition will be described.

<<Adhesive composition>>
When the adhesive layer is energy ray curable, examples of the adhesive composition containing an energy ray curable adhesive, that is, the energy ray curable adhesive composition, include an adhesive composition (I-1) containing a non-energy ray curable adhesive resin (I-1a) (hereinafter, may be abbreviated as "adhesive resin (I-1a)") and an energy ray curable compound; an adhesive composition (I-2) containing an energy ray curable adhesive resin (I-2a) (hereinafter, may be abbreviated as "adhesive resin (I-2a)") in which an unsaturated group has been introduced into the side chain of the non-energy ray curable adhesive resin (I-1a); an adhesive composition (I-3) containing the adhesive resin (I-2a) and an energy ray curable compound, and the like.

Each of the pressure-sensitive adhesive compositions (I-1), (I-2) and (I-3) may or may not further contain the component (γ2). Each of the pressure-sensitive adhesive compositions (I-1), (I-2) and (I-3) may or may not contain the component (γ1) as the main component (pressure-sensitive adhesive).
Each of the pressure-sensitive adhesive compositions (I-1), (I-2) and (I-3) preferably contains the component (γ1), and may contain both the component (γ1) and the component (γ2), or may contain the component (γ1) but not the component (γ2).

<Pressure-sensitive adhesive composition (I-1)>
As described above, the pressure-sensitive adhesive composition (I-1) contains a non-energy ray-curable pressure-sensitive adhesive resin (I-1a) and an energy ray-curable compound, and may or may not further contain the component (γ2) in addition to these.
In the pressure-sensitive adhesive composition (I-1), the pressure-sensitive adhesive resin (I-1a) or the energy ray-curable compound may be the component (γ1), or the pressure-sensitive adhesive resin (I-1a) or the energy ray-curable compound may be the main component.

[Adhesive resin (I-1a)]
The adhesive resin (I-1a) is preferably an acrylic resin.
The acrylic resin may, for example, be an acrylic polymer having at least a structural unit derived from an alkyl (meth)acrylate ester.
The structural unit contained in the acrylic resin may be of only one type, or may be of two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.

The adhesive resin (I-1a) contained in the adhesive composition (I-1) may be of only one type or of two or more types, and if there are two or more types, the combination and ratio thereof can be selected arbitrarily.

In the adhesive composition (I-1), the content ratio of the adhesive resin (I-1a) to the total mass of the adhesive composition (I-1) is preferably 5 to 99 mass%, more preferably 10 to 95 mass%, and particularly preferably 15 to 90 mass%.

[Energy ray curable compound]
The energy ray-curable compound contained in the pressure-sensitive adhesive composition (I-1) includes a monomer or oligomer having an energy ray-polymerizable unsaturated group and capable of being cured by irradiation with energy rays.
Of the energy ray-curable compounds, examples of the monomer include polyvalent (meth)acrylates such as trimethylolpropane tri(meth)acrylate, pentaerythritol (meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butylene glycol di(meth)acrylate, and 1,6-hexanediol (meth)acrylate; urethane (meth)acrylate; polyester (meth)acrylate; polyether (meth)acrylate; and epoxy (meth)acrylate.
Among the energy ray-curable compounds, examples of the oligomer include oligomers obtained by polymerizing the above-exemplified monomers.
The energy ray curable compound is preferably a urethane (meth)acrylate or a urethane (meth)acrylate oligomer, since it has a relatively large molecular weight and is less likely to reduce the storage modulus of the pressure-sensitive adhesive layer.

The energy ray-curable compound contained in the pressure-sensitive adhesive composition (I-1) may be only one type or may be two or more types, and if there are two or more types, the combination and ratio thereof can be selected arbitrarily.

In the pressure-sensitive adhesive composition (I-1), the content ratio of the energy ray-curable compound relative to the total mass of the pressure-sensitive adhesive composition (I-1) is preferably 1 to 95 mass%, more preferably 5 to 90 mass%, and particularly preferably 10 to 85 mass%.
In the case of using an energy ray-curable compound that is liquid at a temperature of 23° C. and does not have a functional group that reacts with the main component contained in the pressure-sensitive adhesive layer, the content of the energy ray-curable compound in the pressure-sensitive adhesive composition (I-1) preferably satisfies a numerical range separately defined as described below.

[Crosslinking agent]
When the acrylic polymer having a structural unit derived from a functional group-containing monomer in addition to a structural unit derived from a (meth)acrylic acid alkyl ester is used as the pressure-sensitive adhesive resin (I-1a), it is preferable that the pressure-sensitive adhesive composition (I-1) further contains a crosslinking agent.

The crosslinking agent, for example, reacts with the functional group to crosslink the adhesive resins (I-1a) together.
Examples of the crosslinking agent include isocyanate-based crosslinking agents (crosslinking agents having an isocyanate group) such as tolylene diisocyanate, hexamethylene diisocyanate, xylylene diisocyanate, and adducts of these diisocyanates; epoxy-based crosslinking agents (crosslinking agents having a glycidyl group) such as ethylene glycol glycidyl ether; aziridine-based crosslinking agents (crosslinking agents having an aziridinyl group) such as hexa[1-(2-methyl)-aziridinyl]triphosphatriazine; metal chelate-based crosslinking agents (crosslinking agents having a metal chelate structure) such as aluminum chelate; and isocyanurate-based crosslinking agents (crosslinking agents having an isocyanuric acid skeleton).
The crosslinking agent is preferably an isocyanate-based crosslinking agent from the viewpoints of improving the cohesive strength of the pressure-sensitive adhesive and thereby improving the adhesive strength of the pressure-sensitive adhesive layer, and of easy availability.

The crosslinking agent contained in the adhesive composition (I-1) may be one type only or may be two or more types, and if there are two or more types, the combination and ratio of these may be selected arbitrarily.

When a crosslinking agent is used, the content of the crosslinking agent in the pressure-sensitive adhesive composition (I-1) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, relative to 100 parts by mass of the pressure-sensitive adhesive resin (I-1a).
When using a crosslinking agent that is liquid at a temperature of 23° C. and does not have a functional group that reacts with the main component contained in the pressure-sensitive adhesive layer, the content of the crosslinking agent in the pressure-sensitive adhesive composition (I-1) preferably satisfies a numerical range separately defined as described below.

[Photopolymerization initiator]
The pressure-sensitive adhesive composition (I-1) may further contain a photopolymerization initiator. The pressure-sensitive adhesive composition (I-1) containing a photopolymerization initiator sufficiently undergoes a curing reaction even when irradiated with relatively low-energy energy rays such as ultraviolet rays.

Examples of the photopolymerization initiator include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ketal; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, and 2,2-dimethoxy-1,2-diphenylethane-1-one; acyl phosphinates such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide and 2,4,6-trimethylbenzoyldiphenylphosphine oxide; Examples of suitable compounds include phosphine oxide compounds; sulfide compounds such as benzyl phenyl sulfide and tetramethylthiuram monosulfide; α-ketol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; benzyl; dibenzyl; benzophenone; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; and 2-chloroanthraquinone.
As the photopolymerization initiator, for example, a quinone compound such as 1-chloroanthraquinone; a photosensitizer such as an amine, and the like can also be used.

The photopolymerization initiator contained in the adhesive composition (I-1) may be only one type or may be two or more types, and if there are two or more types, the combination and ratio thereof can be selected arbitrarily.

When a photopolymerization initiator is used, the content of the photopolymerization initiator in the pressure-sensitive adhesive composition (I-1) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the content of the energy ray-curable compound.
In the case of using a photopolymerization initiator that is liquid at a temperature of 23° C. and does not have a functional group that reacts with the main component contained in the pressure-sensitive adhesive layer, the content of the photopolymerization initiator in the pressure-sensitive adhesive composition (I-1) preferably satisfies a numerical range separately defined as described later.

[Other additives]
The pressure-sensitive adhesive composition (I-1) may contain other additives that do not fall under any of the above-mentioned components, as long as the effects of the present invention are not impaired.
Examples of the other additives include known additives such as antistatic agents, antioxidants, softeners (plasticizers), fillers, rust inhibitors, colorants (pigments, dyes), sensitizers, tackifiers, reaction retarders, and crosslinking accelerators (catalysts).

A reaction retarder is, for example, a component that inhibits the progression of an unintended crosslinking reaction in the pressure-sensitive adhesive composition (I-1) during storage due to the action of a catalyst mixed in the pressure-sensitive adhesive composition (I-1). Examples of reaction retarders include those that form a chelate complex by chelating with the catalyst, and more specifically, those that have two or more carbonyl groups (-C(=O)-) in one molecule.

The other additives contained in the adhesive composition (I-1) may be of only one type or of two or more types, and if there are two or more types, their combination and ratio can be selected arbitrarily.

The content of other additives in the pressure-sensitive adhesive composition (I-1) is not particularly limited and may be appropriately selected depending on the type of additives.
When using other additives that are liquid at a temperature of 23° C. and do not have a functional group that reacts with the main component contained in the pressure-sensitive adhesive layer, the content of such additives in the pressure-sensitive adhesive composition (I-1) preferably satisfies a numerical range separately defined as described below.

[solvent]
The pressure-sensitive adhesive composition (I-1) may contain a solvent. By containing a solvent, the pressure-sensitive adhesive composition (I-1) has improved suitability for application to a surface to be coated.

The solvent is preferably an organic solvent.
Examples of the organic solvent include ketones such as methyl ethyl ketone and acetone; esters (carboxylates) such as ethyl acetate; ethers such as tetrahydrofuran and dioxane; aliphatic hydrocarbons such as cyclohexane and n-hexane; aromatic hydrocarbons such as toluene and xylene; and alcohols such as 1-propanol and 2-propanol.

[Component (γ2)]
The component (γ2) in the pressure-sensitive adhesive composition (I-1) is liquid at a temperature of 23° C. In addition, the component (γ2) does not have a functional group that reacts with the main component contained in the pressure-sensitive adhesive layer (i.e., does not react with the main component). A component that has a functional group that reacts with the main component contained in the pressure-sensitive adhesive layer and is liquid at a temperature of 23° C. does not migrate from the pressure-sensitive adhesive layer to the intermediate layer by reacting with the main component in the pressure-sensitive adhesive layer, and as a result, does not migrate to the film-like adhesive. In this embodiment, the component (γ2) that does not have the functional group and is liquid at a temperature of 23° C. and is not capable of inhibiting migration from the pressure-sensitive adhesive layer to the film-like adhesive is inhibited from migrating from the pressure-sensitive adhesive layer to the film-like adhesive, instead of the component that has the functional group and is liquid at a temperature of 23° C.
For example, when the main component has a hydroxyl group or an amino group, the functional group that reacts with the main component can be an isocyanate group.

The component (γ2) is not particularly limited as long as it satisfies these conditions, and can be arbitrarily selected depending on the purpose. The components contained in the pressure-sensitive adhesive composition (I-1) that do not fall under either the pressure-sensitive adhesive resin (I-1a) or the solvent, that is, among the energy ray curable compound, the crosslinking agent, the photopolymerization initiator, and other additives, those that are liquid at a temperature of 23° C. and do not have a functional group that reacts with the main component contained in the pressure-sensitive adhesive layer are the component (γ2). A solvent is not usually contained in the pressure-sensitive adhesive layer.
Preferred examples of the component (γ2) include antistatic agents and tackifiers.

(Antistatic agent in liquid form at 23°C)
The antistatic agent that is liquid at a temperature of 23° C. may be a known one such as a conductive compound, and is not particularly limited.
Examples of the antistatic agent include various ionic liquids.
Examples of the ionic liquid include known ionic liquids such as pyrimidinium salts, pyridinium salts, piperidinium salts, pyrrolidinium salts, imidazolium salts, morpholinium salts, sulfonium salts, phosphonium salts, and ammonium salts.

The component (γ2) contained in the adhesive composition (I-1) may be only one type, or may be two or more types, and if there are two or more types, the combination and ratio thereof can be selected arbitrarily.

When the component (γ2) is used, the content of the component (γ2) in the pressure-sensitive adhesive composition (I-1) and the pressure-sensitive adhesive layer can be appropriately adjusted depending on the type of the component (γ2).
In the pressure-sensitive adhesive composition (I-1) and the pressure-sensitive adhesive layer, the content of component (γ2) is preferably 0.1 to 40 parts by mass per 100 parts by mass of the pressure-sensitive adhesive resin (I-1a). When the content is equal to or less than the upper limit, migration of component (γ2) in the pressure-sensitive adhesive layer to the film-like adhesive is further suppressed. When the content is equal to or more than the lower limit, the effect obtained by using component (γ2) is further enhanced.

In particular, when component (γ2) is an antistatic agent, the content of component (γ2) (antistatic agent) in the adhesive composition (I-1) and the adhesive layer is preferably 1 to 7 parts by mass, and more preferably 1 to 5 parts by mass, per 100 parts by mass of the adhesive resin (I-1a). When the content is equal to or less than the upper limit, migration of component (γ2) in the adhesive layer to the film-like adhesive is further suppressed, and excessive use of component (γ2) is suppressed. When the content is equal to or more than the lower limit, the effect obtained by using component (γ2) is enhanced.

<Pressure-sensitive adhesive composition (I-2)>
As described above, the pressure-sensitive adhesive composition (I-2) contains an energy ray-curable pressure-sensitive adhesive resin (I-2a) in which an unsaturated group has been introduced into the side chain of a non-energy ray-curable pressure-sensitive adhesive resin (I-1a).
The pressure-sensitive adhesive composition (I-2) may or may not further contain the component (γ2) in addition to the above.
In the pressure-sensitive adhesive composition (I-2), the pressure-sensitive adhesive resin (I-2a) may be the component (γ1), or the pressure-sensitive adhesive resin (I-2a) may be the main component.

[Adhesive resin (I-2a)]
The adhesive resin (I-2a) can be obtained, for example, by reacting a functional group in the adhesive resin (I-1a) with an unsaturated group-containing compound having an energy ray-polymerizable unsaturated group.

The unsaturated group-containing compound is a compound having, in addition to the energy ray-polymerizable unsaturated group, a group that can bond to the adhesive resin (I-1a) by reacting with a functional group in the adhesive resin (I-1a).
Examples of the energy ray-polymerizable unsaturated group include a (meth)acryloyl group, a vinyl group (ethenyl group), and an allyl group (2-propenyl group), and the like, with a (meth)acryloyl group being preferred.
Examples of the group capable of bonding to a functional group in the adhesive resin (I-1a) include an isocyanate group and a glycidyl group capable of bonding to a hydroxyl group or an amino group, and a hydroxyl group and an amino group capable of bonding to a carboxy group or an epoxy group.

Examples of the unsaturated group-containing compound include (meth)acryloyloxyethyl isocyanate, (meth)acryloyl isocyanate, glycidyl (meth)acrylate, etc.

The adhesive resin (I-2a) contained in the adhesive composition (I-2) may be only one type or may be two or more types, and if there are two or more types, the combination and ratio thereof can be selected arbitrarily.

In the adhesive composition (I-2), the content ratio of the adhesive resin (I-2a) to the total mass of the adhesive composition (I-2) is preferably 5 to 99 mass%, more preferably 10 to 95 mass%, and particularly preferably 10 to 90 mass%.

[Crosslinking agent]
When the adhesive resin (I-2a) is, for example, the acrylic polymer having a structural unit derived from a functional group-containing monomer similar to that in the adhesive resin (I-1a), the adhesive composition (I-2) may further contain a crosslinking agent.

The crosslinking agent in the pressure-sensitive adhesive composition (I-2) may be the same as the crosslinking agent in the pressure-sensitive adhesive composition (I-1).
The crosslinking agent contained in the pressure-sensitive adhesive composition (I-2) may be one kind or two or more kinds. When two or more kinds are contained, the combination and ratio thereof can be selected arbitrarily.

When a crosslinking agent is used, the content of the crosslinking agent in the pressure-sensitive adhesive composition (I-2) is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass, relative to 100 parts by mass of the pressure-sensitive adhesive resin (I-2a).
When using a crosslinking agent that is liquid at a temperature of 23° C. and does not have a functional group that reacts with the main component contained in the pressure-sensitive adhesive layer, the content of the crosslinking agent in the pressure-sensitive adhesive composition (I-2) preferably satisfies a numerical range separately defined as described below.

[Photopolymerization initiator]
The pressure-sensitive adhesive composition (I-2) may further contain a photopolymerization initiator. The pressure-sensitive adhesive composition (I-2) containing a photopolymerization initiator sufficiently undergoes a curing reaction even when irradiated with relatively low-energy energy rays such as ultraviolet rays.

The photopolymerization initiator in the pressure-sensitive adhesive composition (I-2) may be the same as the photopolymerization initiator in the pressure-sensitive adhesive composition (I-1).
The photopolymerization initiator contained in the pressure-sensitive adhesive composition (I-2) may be only one type, or may be two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

When a photopolymerization initiator is used, the content of the photopolymerization initiator in the pressure-sensitive adhesive composition (I-2) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the pressure-sensitive adhesive resin (I-2a).
In the case of using a photopolymerization initiator that is liquid at a temperature of 23° C. and does not have a functional group that reacts with the main component contained in the pressure-sensitive adhesive layer, the content of the photopolymerization initiator in the pressure-sensitive adhesive composition (I-2) preferably satisfies a numerical range separately defined as described later.

[Other additives, solvents]
The pressure-sensitive adhesive composition (I-2) may contain other additives that do not fall under any of the above-mentioned components, as long as the effects of the present invention are not impaired.
The pressure-sensitive adhesive composition (I-2) may contain a solvent for the same purpose as in the case of the pressure-sensitive adhesive composition (I-1).
The other additives and solvents in the pressure-sensitive adhesive composition (I-2) include the same additives and solvents as those in the pressure-sensitive adhesive composition (I-1), respectively.
The other additives and the solvent contained in the pressure-sensitive adhesive composition (I-2) may each be only one type, or two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.
The contents of other additives and the solvent in the pressure-sensitive adhesive composition (I-2) are not particularly limited, and may be appropriately selected depending on the type of the additives and the solvent.
When using another additive that is liquid at a temperature of 23° C. and does not have a functional group that reacts with the main component contained in the pressure-sensitive adhesive layer, the content of the other additive in the pressure-sensitive adhesive composition (I-2) preferably satisfies a numerical range separately defined as described below.

[Component (γ2)]
The component (γ2) in the pressure-sensitive adhesive composition (I-2) is liquid at a temperature of 23° C. Furthermore, the component (γ2) does not have a functional group that reacts with the main component contained in the pressure-sensitive adhesive layer (i.e., does not react with the main component). As in the case of the pressure-sensitive adhesive composition (I-1), the use of the pressure-sensitive adhesive composition (I-2) also inhibits migration of the component (γ2) from the pressure-sensitive adhesive layer to the film-like adhesive.

The component (γ2) is not particularly limited as long as it satisfies these conditions, and can be arbitrarily selected depending on the purpose. The components contained in the pressure-sensitive adhesive composition (I-2) that do not fall under either the pressure-sensitive adhesive resin (I-2a) or the solvent, that is, among the crosslinking agent, the photopolymerization initiator, and other additives, those that are liquid at a temperature of 23° C. and do not have a functional group that reacts with the main component contained in the pressure-sensitive adhesive layer are the component (γ2).
Preferred examples of the component (γ2) in the pressure-sensitive adhesive composition (I-2) include the same as the preferred component (γ2) in the pressure-sensitive adhesive composition (I-1) (antistatic agent, tackifier, etc.).

The component (γ2) contained in the adhesive composition (I-2) may be only one type or may be two or more types, and if there are two or more types, the combination and ratio thereof can be selected arbitrarily.

When the component (γ2) is used, the content of the component (γ2) in the pressure-sensitive adhesive composition (I-2) can be appropriately adjusted depending on the type of the component (γ2).
In the pressure-sensitive adhesive composition (I-2) and the pressure-sensitive adhesive layer, the content of component (γ2) is preferably 0.1 to 10 parts by mass per 100 parts by mass of the pressure-sensitive adhesive resin (I-2a). When the content is equal to or less than the upper limit, migration of component (γ2) in the pressure-sensitive adhesive layer to the film-like adhesive is further suppressed. When the content is equal to or more than the lower limit, the effect obtained by using component (γ2) is further enhanced.

In particular, when component (γ2) is an antistatic agent, the content of component (γ2) (antistatic agent) in the adhesive composition (I-2) and the adhesive layer is preferably 1 to 7 parts by mass, and more preferably 1 to 5 parts by mass, per 100 parts by mass of the adhesive resin (I-2a). When the content is equal to or less than the upper limit, migration of component (γ2) in the adhesive layer to the film-like adhesive is further suppressed, and excessive use of component (γ2) is suppressed. When the content is equal to or more than the lower limit, the effect obtained by using component (γ2) is enhanced.

<Pressure-sensitive adhesive composition (I-3)>
As described above, the pressure-sensitive adhesive composition (I-3) contains the pressure-sensitive adhesive resin (I-2a) and an energy ray-curable compound.

The pressure-sensitive adhesive composition (I-3) may or may not further contain the component (γ2) in addition to the above.
In the pressure-sensitive adhesive composition (I-3), the pressure-sensitive adhesive resin (I-2a) or the energy ray-curable compound may be the component (γ1), or the pressure-sensitive adhesive resin (I-2a) or the energy ray-curable compound may be the main component.

[Adhesive resin (I-2a)]
The adhesive resin (I-2a) in the adhesive composition (I-3) may be the same as the adhesive resin (I-2a) in the adhesive composition (I-2).
The pressure-sensitive adhesive resin (I-2a) contained in the pressure-sensitive adhesive composition (I-3) may be one type or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

In the adhesive composition (I-3), the content ratio of the adhesive resin (I-2a) relative to the total mass of the adhesive composition (I-3) is preferably 5 to 99 mass%, more preferably 10 to 95 mass%, and particularly preferably 15 to 90 mass%.

[Energy ray curable compound]
The energy ray-curable compound contained in the pressure-sensitive adhesive composition (I-3) includes a monomer or oligomer having an energy ray-polymerizable unsaturated group and curable by irradiation with energy rays, and includes the same as the energy ray-curable compound contained in the pressure-sensitive adhesive composition (I-1).
The pressure-sensitive adhesive composition (I-3) may contain only one type of energy ray-curable compound, or may contain two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

In the pressure-sensitive adhesive composition (I-3) and the pressure-sensitive adhesive layer, the content of the energy ray-curable compound is preferably 0.01 to 300 parts by mass, more preferably 0.03 to 200 parts by mass, and particularly preferably 0.05 to 100 parts by mass, relative to 100 parts by mass of the pressure-sensitive adhesive resin (I-2a).
In the case of using an energy ray-curable compound that is liquid at a temperature of 23° C. and does not have a functional group that reacts with the main component contained in the pressure-sensitive adhesive layer, the content of the energy ray-curable compound in the pressure-sensitive adhesive composition (I-3) preferably satisfies a numerical range separately defined as described below.

[Photopolymerization initiator]
The pressure-sensitive adhesive composition (I-3) may further contain a photopolymerization initiator. The pressure-sensitive adhesive composition (I-3) containing a photopolymerization initiator sufficiently undergoes a curing reaction even when irradiated with relatively low-energy energy rays such as ultraviolet rays.

The photopolymerization initiator in the pressure-sensitive adhesive composition (I-3) may be the same as the photopolymerization initiator in the pressure-sensitive adhesive composition (I-1).
The photopolymerization initiator contained in the pressure-sensitive adhesive composition (I-3) may be only one type, or may be two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

When a photopolymerization initiator is used, the content of the photopolymerization initiator in the pressure-sensitive adhesive composition (I-3) is preferably 0.01 to 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass, relative to 100 parts by mass of the total content of the pressure-sensitive adhesive resin (I-2a) and the energy ray-curable compound.
In the case of using a photopolymerization initiator that is liquid at a temperature of 23° C. and does not have a functional group that reacts with the main component contained in the pressure-sensitive adhesive layer, the content of the photopolymerization initiator in the pressure-sensitive adhesive composition (I-3) preferably satisfies a numerical range separately defined as described later.

[Other additives, solvents]
The pressure-sensitive adhesive composition (I-3) may contain other additives that do not fall under any of the above-mentioned components, as long as the effects of the present invention are not impaired.
The pressure-sensitive adhesive composition (I-3) may contain a solvent for the same purpose as in the case of the pressure-sensitive adhesive composition (I-1).
The other additives and solvents in the pressure-sensitive adhesive composition (I-3) include the same additives and solvents as those in the pressure-sensitive adhesive composition (I-1), respectively.
The other additives and the solvent contained in the pressure-sensitive adhesive composition (I-3) may each be only one type, or two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.
The contents of other additives and the solvent in the pressure-sensitive adhesive composition (I-3) are not particularly limited and may be appropriately selected depending on the types thereof.
When using another additive that is liquid at a temperature of 23° C. and does not have a functional group that reacts with the main component contained in the pressure-sensitive adhesive layer, the content of the other additive in the pressure-sensitive adhesive composition (I-3) preferably satisfies a numerical range separately defined as described below.

[Component (γ2)]
The component (γ2) in the pressure-sensitive adhesive composition (I-3) is liquid at a temperature of 23° C. Furthermore, the component (γ2) does not have a functional group that reacts with the main component contained in the pressure-sensitive adhesive layer (i.e., does not react with the main component). As in the case of the pressure-sensitive adhesive composition (I-1), the use of the pressure-sensitive adhesive composition (I-3) also inhibits migration of the component (γ2) from the pressure-sensitive adhesive layer to the film-like adhesive.

The component (γ2) is not particularly limited as long as it satisfies such conditions, and can be arbitrarily selected depending on the purpose. The components contained in the pressure-sensitive adhesive composition (I-3) that do not correspond to either the pressure-sensitive adhesive resin (I-2a) or the solvent, that is, among the energy ray curable compound, the photopolymerization initiator, and other additives, those that are liquid at a temperature of 23° C. and do not have a functional group that reacts with the main component contained in the pressure-sensitive adhesive layer are the component (γ2).
Preferred examples of the component (γ2) in the pressure-sensitive adhesive composition (I-3) include the same as the preferred component (γ2) in the pressure-sensitive adhesive composition (I-1) (antistatic agent, tackifier, etc.).

The component (γ2) contained in the adhesive composition (I-3) may be only one type or may be two or more types, and if there are two or more types, the combination and ratio thereof can be selected arbitrarily.

When the component (γ2) is used, the content of the component (γ2) in the pressure-sensitive adhesive composition (I-3) can be appropriately adjusted depending on the type of the component (γ2).
In the pressure-sensitive adhesive composition (I-3) and the pressure-sensitive adhesive layer, the content of component (γ2) is preferably 0.1 to 10 parts by mass per 100 parts by mass of the pressure-sensitive adhesive resin (I-2a). When the content is equal to or less than the upper limit, migration of component (γ2) in the pressure-sensitive adhesive layer to the film-like adhesive is further suppressed. When the content is equal to or more than the lower limit, the effect obtained by using component (γ2) is further enhanced.

In particular, when component (γ2) is an antistatic agent, the content of component (γ2) (antistatic agent) in the adhesive composition (I-3) and the adhesive layer is preferably 1 to 7 parts by mass, and more preferably 1 to 5 parts by mass, per 100 parts by mass of the adhesive resin (I-2a). When the content is equal to or less than the upper limit, migration of component (γ2) in the adhesive layer to the film-like adhesive is further suppressed, and excessive use of component (γ2) is suppressed. When the content is equal to or more than the lower limit, the effect obtained by using component (γ2) is enhanced.

<Pressure-sensitive adhesive compositions other than pressure-sensitive adhesive compositions (I-1) to (I-3)>
So far, the pressure-sensitive adhesive composition (I-1), the pressure-sensitive adhesive composition (I-2), and the pressure-sensitive adhesive composition (I-3) have been mainly explained, but the components explained as contained therein can be similarly used in general pressure-sensitive adhesive compositions other than these three types of pressure-sensitive adhesive compositions (referred to in this specification as "pressure-sensitive adhesive compositions other than pressure-sensitive adhesive compositions (I-1) to (I-3)").

Examples of pressure-sensitive adhesive compositions other than the pressure-sensitive adhesive compositions (I-1) to (I-3) include energy ray-curable pressure-sensitive adhesive compositions as well as non-energy ray-curable pressure-sensitive adhesive compositions.
Examples of the non-energy ray curable pressure-sensitive adhesive composition include a pressure-sensitive adhesive composition (I-4) containing a non-energy ray curable pressure-sensitive adhesive resin (I-1a) such as an acrylic resin, a urethane resin, a rubber-based resin, a silicone resin, an epoxy-based resin, a polyvinyl ether, a polycarbonate, or an ester-based resin, and those containing an acrylic resin are preferred.

It is preferable that the adhesive compositions other than the adhesive compositions (I-1) to (I-3) contain one or more crosslinking agents, the content of which can be the same as that of the above-mentioned adhesive composition (I-1), etc.

<Adhesive composition (I-4)>
A preferred example of the pressure-sensitive adhesive composition (I-4) is one that contains the pressure-sensitive adhesive resin (I-1a) and a crosslinking agent, and may or may not contain the component (γ2) in addition to these.
In the pressure-sensitive adhesive composition (I-4), the pressure-sensitive adhesive resin (I-1a) may be the component (γ1), or the pressure-sensitive adhesive resin (I-1a) may be the main component.

[Adhesive resin (I-1a)]
The adhesive resin (I-1a) in the adhesive composition (I-4) may be the same as the adhesive resin (I-1a) in the adhesive composition (I-1).
The pressure-sensitive adhesive resin (I-1a) contained in the pressure-sensitive adhesive composition (I-4) may be one type or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

In the adhesive composition (I-4), the content ratio of the adhesive resin (I-1a) relative to the total mass of the adhesive composition (I-4) is preferably 5 to 99 mass%, more preferably 10 to 95 mass%, and particularly preferably 15 to 90 mass%.

[Crosslinking agent]
When the acrylic polymer having a structural unit derived from a functional group-containing monomer in addition to a structural unit derived from a (meth)acrylic acid alkyl ester is used as the pressure-sensitive adhesive resin (I-1a), it is preferable that the pressure-sensitive adhesive composition (I-4) further contains a crosslinking agent.

The crosslinking agent in the pressure-sensitive adhesive composition (I-4) may be the same as the crosslinking agent in the pressure-sensitive adhesive composition (I-1).
The crosslinking agent contained in the pressure-sensitive adhesive composition (I-4) may be one type or two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

In the pressure-sensitive adhesive composition (I-4), the content of the crosslinking agent is preferably 0.01 to 50 parts by mass, more preferably 0.1 to 25 parts by mass, and particularly preferably 0.1 to 10 parts by mass, relative to 100 parts by mass of the pressure-sensitive adhesive resin (I-1a).
When using a crosslinking agent that is liquid at a temperature of 23° C. and does not have a functional group that reacts with the main component contained in the pressure-sensitive adhesive layer, the content of the crosslinking agent in the pressure-sensitive adhesive composition (I-4) preferably satisfies a numerical range separately defined as described below.

[Other additives, solvents]
The pressure-sensitive adhesive composition (I-4) may contain other additives that do not fall under any of the above-mentioned components, as long as the effects of the present invention are not impaired.
The pressure-sensitive adhesive composition (I-4) may contain a solvent for the same purpose as in the case of the pressure-sensitive adhesive composition (I-1).
The other additives and solvents in the pressure-sensitive adhesive composition (I-4) include the same additives and solvents as those in the pressure-sensitive adhesive composition (I-1), respectively.
The other additives and the solvent contained in the pressure-sensitive adhesive composition (I-4) may each be only one type, or two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.
The contents of other additives and the solvent in the pressure-sensitive adhesive composition (I-4) are not particularly limited and may be appropriately selected depending on the type of additives and the solvent.
When using other additives that are liquid at a temperature of 23° C. and do not have a functional group that reacts with the main component contained in the pressure-sensitive adhesive layer, the content of such additives in the pressure-sensitive adhesive composition (I-4) preferably satisfies a numerical range separately defined as described below.

[Component (γ2)]
The component (γ2) in the pressure-sensitive adhesive composition (I-4) is liquid at a temperature of 23° C. Furthermore, the component (γ2) does not have a functional group that reacts with the main component contained in the pressure-sensitive adhesive layer (i.e., does not react with the main component). As in the case of the pressure-sensitive adhesive composition (I-1), the use of the pressure-sensitive adhesive composition (I-4) also inhibits migration of the component (γ2) from the pressure-sensitive adhesive layer to the film-like adhesive.

The component (γ2) is not particularly limited as long as it satisfies these conditions, and can be arbitrarily selected depending on the purpose. The components contained in the pressure-sensitive adhesive composition (I-4) that do not fall under either the pressure-sensitive adhesive resin (I-1a) or the solvent, that is, among the crosslinking agent and other additives, those that are liquid at a temperature of 23° C. and do not have a functional group that reacts with the main component contained in the pressure-sensitive adhesive layer, are the component (γ2).
Preferred examples of the component (γ2) in the pressure-sensitive adhesive composition (I-4) include the same as the preferred component (γ2) in the pressure-sensitive adhesive composition (I-1) (antistatic agent, tackifier, etc.).

The component (γ2) contained in the adhesive composition (I-4) may be only one type or may be two or more types, and if there are two or more types, the combination and ratio thereof can be selected arbitrarily.

When the component (γ2) is used, the content of the component (γ2) in the pressure-sensitive adhesive composition (I-4) can be appropriately adjusted depending on the type of the component (γ2).
In the pressure-sensitive adhesive composition (I-4) and the pressure-sensitive adhesive layer, the content of component (γ2) is preferably 0.1 to 10 parts by mass per 100 parts by mass of the pressure-sensitive adhesive resin (I-1a). When the content is equal to or less than the upper limit, migration of component (γ2) in the pressure-sensitive adhesive layer to the film-like adhesive is further suppressed. When the content is equal to or more than the lower limit, the effect obtained by using component (γ2) is further enhanced.

In particular, when component (γ2) is an antistatic agent, the content of component (γ2) (antistatic agent) in the adhesive composition (I-4) and the adhesive layer is preferably 1 to 7 parts by mass, and more preferably 1 to 5 parts by mass, per 100 parts by mass of the adhesive resin (I-1a). When the content is equal to or less than the upper limit, migration of component (γ2) in the adhesive layer to the film-like adhesive is further suppressed, and excessive use of component (γ2) is suppressed. When the content is equal to or more than the lower limit, the effect obtained by using component (γ2) is enhanced.

When component (γ2) is used, the content of component (γ2) in the pressure-sensitive adhesive layer is preferably 0.1 to 10 parts by mass per 100 parts by mass of the pressure-sensitive adhesive, regardless of whether the pressure-sensitive adhesive composition is any of pressure-sensitive adhesive compositions (I-1) to (I-4).
In particular, when the component (γ2) is an antistatic agent, the content of the component (γ2) (antistatic agent) in the pressure-sensitive adhesive layer is preferably 1 to 7 parts by mass, and more preferably 1 to 5 parts by mass, per 100 parts by mass of the pressure-sensitive adhesive content.

<<Method of producing pressure-sensitive adhesive composition>>
The pressure-sensitive adhesive compositions other than the pressure-sensitive adhesive compositions (I-1) to (I-3), such as the pressure-sensitive adhesive composition (I-4), can be obtained by blending the pressure-sensitive adhesive and, as necessary, each component for constituting the pressure-sensitive adhesive composition, such as a component other than the pressure-sensitive adhesive.
The order of addition of the components is not particularly limited, and two or more components may be added simultaneously.
When a solvent is used, the solvent may be used by mixing it with any of the other ingredients to pre-dilute the ingredients, or the solvent may be used by mixing it with any of the other ingredients without pre-diluting the ingredients.
The method for mixing the components during blending is not particularly limited, and may be appropriately selected from known methods such as a method of mixing by rotating a stirrer or stirring blade, a method of mixing using a mixer, a method of mixing by applying ultrasound, etc.
The temperature and time during addition and mixing of each component are not particularly limited as long as the components do not deteriorate, and may be adjusted appropriately. The temperature is preferably 15 to 30°C.

Intermediate Layer and Composition for Forming Intermediate Layer The intermediate layer is in the form of a sheet or film, and contains the non-silicon resin (β1) as a main component.
The intermediate layer may contain only the non-silicon-based resin (β1) (consisting of the non-silicon-based resin (β1)), or may contain the non-silicon-based resin (β1) and other components.

The intermediate layer can be formed, for example, using a composition for forming an intermediate layer that contains the non-silicon resin (β1). For example, the intermediate layer can be formed in the desired area by applying the composition for forming an intermediate layer to the surface on which the intermediate layer is to be formed and drying it as necessary.

In the intermediate layer, the ratio of the total content of one or more components contained in the intermediate layer, which will be described later, to the total mass of the intermediate layer does not exceed 100 mass %.
Similarly, in the composition for forming an intermediate layer, the ratio of the total content of one or more components contained in the composition for forming an intermediate layer, which will be described later, to the total mass of the composition for forming an intermediate layer does not exceed 100 mass %.

The composition for forming the intermediate layer can be applied in the same manner as in the application of the adhesive composition described above.

The drying conditions for the intermediate layer forming composition are not particularly limited. When the intermediate layer forming composition contains a solvent described below, it is preferable to heat dry it. In this case, it is preferable to dry it under conditions of, for example, 60 to 130°C for 1 to 6 minutes.

The weight average molecular weight of the non-silicon based resin (β1) is 20,000 to 100,000.
In order to further improve the suitability of the semiconductor wafer division of the semiconductor device manufacturing sheet, the weight average molecular weight of the non-silicon-based resin (β1) may be, for example, any one of 20,000 to 80,000, 20,000 to 60,000, and 20,000 to 40,000.

The component having the greatest content (parts by mass) in the intermediate layer is the non-silicon resin (β1).
In order to achieve a greater effect by the intermediate layer containing the non-silicon-based resin (β1), the ratio of the content of the non-silicon-based resin (β1) to the total mass of the intermediate layer (in other words, the ratio of the content of the non-silicon-based resin (β1) to the total content of all components other than the solvent in the composition for forming the intermediate layer) is preferably 75 mass% or more, more preferably 85 mass% or more, and may be, for example, any one of 95 mass% or more, 97 mass% or more, and 99 mass% or more.
On the other hand, the ratio is 100% by mass or less.

The non-silicon-based resin (β1) is not particularly limited as long as it is a resin component that does not contain silicon atoms as constituent atoms and has a weight average molecular weight of 20,000 to 100,000.
The non-silicon resin (β1) may be, for example, either a polar resin having a polar group, or a non-polar resin having no polar group.
For example, the non-silicon-based resin (β1) is preferably a polar resin in that it has high solubility in the intermediate layer forming composition and the intermediate layer forming composition has higher coatability.

The non-silicon resin (β1) may be, for example, a homopolymer that is a polymer of one type of monomer (in other words, having only one type of structural unit), or a copolymer that is a polymer of two or more types of monomers (in other words, having two or more types of structural units).

Examples of the polar group include a carbonyloxy group (-C(=O)-O-) and an oxycarbonyl group (-O-C(=O)-).

The polar resin may have only structural units having polar groups, or may have both structural units having polar groups and structural units not having polar groups.

Examples of the structural unit having a polar group include a structural unit derived from vinyl acetate.
Examples of the structural unit not having a polar group include a structural unit derived from ethylene.

In the polar resin, the ratio of the mass of the structural unit having a polar group to the total mass of all structural units is preferably 45 mass% or less, more preferably 30 mass% or less. The lower the ratio, the higher the effect of suppressing the migration of the component (α2) in the film-like adhesive to the pressure-sensitive adhesive layer and the migration of the component (γ2) in the pressure-sensitive adhesive layer to the film-like adhesive.
On the other hand, the ratio is preferably 5% by mass or more, more preferably 7.5% by mass or more, and even more preferably 10% by mass or more. The higher the ratio, the more significantly the polar resin has the property of having a polar group.

In the polar resin, the ratio of the mass of the structural unit having a polar group to the total mass of all structural units can be appropriately adjusted within a range set by any combination of any of the upper limit values and any of the lower limit values described above. For example, in one embodiment, the ratio may be any of 5 to 45% by mass, 7.5 to 45% by mass, 10 to 45% by mass, 5 to 30% by mass, 7.5 to 30% by mass, and 10 to 30% by mass.

The polar resin may, for example, be an ethylene-vinyl acetate copolymer.
Among them, the preferred polar resin is, for example, an ethylene-vinyl acetate copolymer in which the ratio of the mass of the structural unit derived from vinyl acetate to the total mass of all structural units (sometimes referred to as the "content of structural units derived from vinyl acetate" in this specification) is within any of the numerical ranges of the "mass ratio of structural units having polar groups" described above, and is particularly preferably 30% by mass or less. That is, a particularly preferred polar resin is, for example, an ethylene-vinyl acetate copolymer in which the ratio of the mass of the structural unit derived from vinyl acetate to the total mass of all structural units is 30% by mass or less. In other words, a particularly preferred polar resin is, for example, an ethylene-vinyl acetate copolymer in which the ratio of the mass of the structural unit derived from ethylene to the total mass of all structural units is 70% by mass or more.

Examples of the non-polar resins include polyethylenes (PE) such as low density polyethylene (LDPE), linear low density polyethylene (LLDPE), metallocene-catalyzed linear low density polyethylene (metallocene LLDPE), medium density polyethylene (MDPE), and high density polyethylene (HDPE); and polyolefins such as polypropylene (PP).

The non-silicon-based resin (β1) contained in the intermediate layer-forming composition and the intermediate layer may be one type or two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.
For example, the composition for forming an intermediate layer and the intermediate layer may contain one or more types of non-silicon-based resins (β1) that are polar resins, and may not contain any non-silicon-based resins (β1) that are non-polar resins, or may contain one or more types of non-silicon-based resins (β1) that are non-polar resins, and may not contain any non-silicon-based resins (β1) that are polar resins, or may contain one or more types of both a non-silicon-based resin (β1) that is a polar resin and a non-silicon-based resin (β1) that is a non-polar resin.
The intermediate layer forming composition and the intermediate layer preferably contain at least the non-silicon based resin (β1), which is a polar resin.

It is preferable that the intermediate layer forming composition and the intermediate layer contain one or more types selected from the group consisting of ethylene vinyl acetate copolymer and polyolefin as the non-silicon resin (β1). In the semiconductor device manufacturing sheet having such an intermediate layer, when the film-like adhesive contains the component (α2), the migration of the component (α2) in the film-like adhesive to the pressure-sensitive adhesive layer is further suppressed, and when the pressure-sensitive adhesive layer contains the component (γ2), the migration of the component (γ2) in the pressure-sensitive adhesive layer to the film-like adhesive is further suppressed.

In the intermediate layer forming composition and the intermediate layer, the content ratio of the non-silicon-based resin (β1), which is a polar resin, to the total content of the non-silicon-based resin (β1) is preferably 80% by mass or more, more preferably 90% by mass or more, and may be, for example, any one of 95% by mass or more, 97% by mass or more, and 99% by mass or more. When the ratio is equal to or more than the lower limit, the effect of using the polar resin is more significantly obtained.
On the other hand, the ratio is 100% by mass or less.

That is, in the composition for forming an intermediate layer and the intermediate layer, the ratio of the content of the non-silicon-based resin (β1), which is a non-polar resin, to the total content of the non-silicon-based resin (β1) is preferably 20 mass% or less, more preferably 10 mass% or less, and may be, for example, any one of 5 mass% or less, 3 mass% or less, and 1 mass% or less.
On the other hand, the ratio is 0 mass % or more.

In terms of ease of handling, the composition for forming the intermediate layer preferably contains a solvent in addition to the non-silicon-based resin (β1), and may contain a component (sometimes referred to as an "additive" in this specification) that does not fall into either the non-silicon-based resin (β1) or the solvent.
The intermediate layer may contain only the non-silicon based resin (β1), or may contain both the non-silicon based resin (β1) and the additive.

The additives may be either resin components (sometimes referred to in this specification as "other resin components") or non-resin components.

Examples of the other resin components include non-silicon-based resins having a weight average molecular weight (Mw) of more than 100,000 (Mw>100,000) and silicon-based resins.

There are no particular limitations on non-silicon-based resins having a weight average molecular weight of more than 100,000, so long as they meet these conditions.

The intermediate layer containing the silicon-based resin makes it easier to pick up the semiconductor chip with the film-like adhesive, as described below.

The silicon-based resin is not particularly limited as long as it is a resin component having silicon atoms as constituent atoms. For example, the weight average molecular weight of the silicon-based resin is not particularly limited.

Preferred silicon-based resins include, for example, resin components that exhibit a release effect against adhesive components, and siloxane-based resins (resin components having siloxane bonds (-Si-O-Si-), also known as siloxane-based compounds) are more preferred.

The siloxane-based resin may, for example, be polydialkylsiloxane.
The alkyl group of the polydialkylsiloxane preferably has 1 to 20 carbon atoms.
The polydialkylsiloxane may, for example, be polydimethylsiloxane.

The non-resin component may be, for example, either an organic compound or an inorganic compound, and is not particularly limited.

The additives contained in the intermediate layer-forming composition and the intermediate layer may be of only one type, or may be of two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.
For example, the composition for forming an intermediate layer and the intermediate layer may contain, as the additive, one or more resin components and no non-resin components, may contain one or more non-resin components and no resin components, or may contain one or more resin components and one or more non-resin components.

When the intermediate layer forming composition and the intermediate layer contain the additives, the ratio of the content of the non-silicon-based resin (β1) in the intermediate layer to the total weight of the intermediate layer (in other words, the ratio of the content of the non-silicon-based resin (β1) to the total content of all components other than the solvent in the intermediate layer forming composition) is preferably 90 to 99.99 mass%, and may be, for example, any one of 90 to 97.5 mass%, 90 to 95 mass%, and 90 to 92.5 mass%, or any one of 92.5 to 99.99 mass%, 95 to 99.99 mass%, and 97.5 to 99.99 mass%, or may be 92.5 to 97.5 mass%.
When the intermediate layer forming composition and the intermediate layer contain the additive, the ratio of the content of the additive in the intermediate layer to the total mass of the intermediate layer (in other words, the ratio of the content of the additive to the total content of all components other than the solvent in the intermediate layer forming composition) is preferably 0.01 to 10 mass%, and may be, for example, any one of 2.5 to 10 mass%, 5 to 10 mass%, and 7.5 to 10 mass%, or any one of 0.01 to 7.5 mass%, 0.01 to 5 mass%, and 0.01 to 2.5 mass%, or may be 2.5 to 7.5 mass%.

The solvent contained in the composition for forming an intermediate layer is not particularly limited, but preferred examples include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropan-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone.
The solvent contained in the composition for forming an intermediate layer may be only one type, or may be two or more types. When two or more types are contained, the combination and ratio thereof can be selected arbitrarily.

The solvent contained in the composition for forming an intermediate layer is preferably tetrahydrofuran or the like, since this allows the components in the composition for forming an intermediate layer to be mixed more uniformly.

The solvent content of the composition for forming the intermediate layer is not particularly limited and may be selected appropriately depending on, for example, the types of components other than the solvent.

As described below, in terms of making it easier to pick up the semiconductor chip with the film-like adhesive, a preferred intermediate layer is, for example, one that contains an ethylene-vinyl acetate copolymer, which is the non-silicon-based resin (β1), and a siloxane-based compound, which is the additive, in which the ratio of the content of the ethylene-vinyl acetate copolymer (the non-silicon-based resin (β1)) to the total mass of the intermediate layer is within any of the numerical ranges described above, and the ratio of the content of the siloxane-based compound (the additive) to the total mass of the intermediate layer is within any of the numerical ranges described above.
For example, such an intermediate layer may contain an ethylene-vinyl acetate copolymer, which is the non-silicon resin (β1), and a siloxane compound, which is the additive, in which the content of the ethylene-vinyl acetate copolymer relative to the total mass of the intermediate layer is 90 to 99.99% by mass, and the content of the siloxane compound relative to the total mass of the intermediate layer is 0.01 to 10% by mass, although this is only one example of a preferred intermediate layer.

A more preferred intermediate layer is, for example, one in which the intermediate layer contains an ethylene-vinyl acetate copolymer, which is the non-silicon resin (β1), and a siloxane-based compound, which is the additive, and in which the ratio of the mass of the structural units derived from vinyl acetate to the total mass of all structural units in the ethylene-vinyl acetate copolymer (in other words, the content of the structural units derived from vinyl acetate) is 30% by mass or less, the ratio of the content of the ethylene-vinyl acetate copolymer to the total mass of the intermediate layer in the intermediate layer is 90 to 99.99% by mass, and the ratio of the content of the siloxane-based compound to the total mass of the intermediate layer in the intermediate layer is 0.01 to 10% by mass. However, this is just one example of a more preferred intermediate layer.

When the surface of the intermediate layer on the film-like adhesive side of the semiconductor device manufacturing sheet (for example, in FIG. 1, the first surface 13a of the intermediate layer 13) is analyzed by X-ray photoelectron spectroscopy (sometimes referred to as "XPS" herein), the ratio of the silicon concentration to the total concentration of carbon, oxygen, nitrogen, and silicon (sometimes abbreviated as "silicon concentration ratio" herein) is preferably 1 to 20% on a molar basis of the element. By using a semiconductor device manufacturing sheet having such an intermediate layer, it is possible to more easily pick up semiconductor chips with film-like adhesive, as described below.

XPS analysis can be performed by analyzing the surface of the intermediate layer facing the film-like adhesive using an X-ray photoelectron spectrometer with an X-ray irradiation angle of 45°, an X-ray beam diameter of 20 μmφ, and an output of 4.5 W.

The silicon concentration ratio is calculated by the following formula:
[Measured value of silicon concentration in XPS analysis (atomic %)] / {[Measured value of carbon concentration in XPS analysis (atomic %)] + [Measured value of oxygen concentration in XPS analysis (atomic %)] + [Measured value of nitrogen concentration in XPS analysis (atomic %)] + [Measured value of silicon concentration in XPS analysis (atomic %)]} × 100
It can be calculated as follows.

In order to make such effects more pronounced, the silicon concentration may be, for example, on a molar basis of the element, any one of 4 to 20%, 8 to 20%, and 12 to 20%, or any one of 1 to 16%, 1 to 12%, and 1 to 8%, or any one of 4 to 16% and 8 to 12%.

When the XPS analysis is performed as described above, there is a possibility that other elements that do not fall under any of carbon, oxygen, nitrogen, and silicon are detected on the surface of the intermediate layer (the surface to be analyzed by XPS). However, even if the other elements are detected, their concentrations are usually very small, so that when calculating the silicon concentration ratio, the measured values of the concentrations of carbon, oxygen, nitrogen, and silicon are used, and the silicon concentration ratio can be calculated with high accuracy.

The intermediate layer may consist of one layer (single layer) or may consist of two or more layers. If it consists of multiple layers, these multiple layers may be the same or different from each other, and the combination of these multiple layers is not particularly limited.

As explained above, the first test piece made of the non-silicon-based resin (β1) contained in the intermediate layer satisfies the relationship between the formulas (X1) and (X2).

As explained above, the maximum width of the intermediate layer is preferably smaller than the maximum width of the pressure-sensitive adhesive layer and the maximum width of the substrate.
The maximum width of the intermediate layer can be appropriately selected taking into consideration the size of the semiconductor wafer. For example, the maximum width of the intermediate layer may be 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm. These three numerical ranges correspond to a semiconductor wafer having a maximum width in a direction parallel to the attachment surface with the semiconductor device manufacturing sheet of 150 mm, 200 mm, or 300 mm. However, as explained above, when the semiconductor device manufacturing sheet (film-like adhesive) is expanded after dicing involving the formation of a modified layer in the semiconductor wafer, the semiconductor device manufacturing sheet is attached to the semiconductor chips as described below, as a group of semiconductor chips (semiconductor chip group) after dicing.

In this specification, unless otherwise specified, the "width of the intermediate layer" means, for example, the "width of the intermediate layer in a direction parallel to the first surface of the intermediate layer." For example, in the case of an intermediate layer having a circular planar shape, the maximum value of the width of the intermediate layer described above is the diameter of the circle that is the planar shape.
This also applies to semiconductor wafers. That is, the "width of the semiconductor wafer" means the "width of the semiconductor wafer in a direction parallel to the surface of the semiconductor wafer attached to the sheet for manufacturing semiconductor device." For example, in the case of a semiconductor wafer having a circular planar shape, the maximum value of the width of the semiconductor wafer is the diameter of the circle that is the planar shape.

The maximum width of the intermediate layer of 150 to 160 mm means that it is equal to or larger than the maximum width of the semiconductor wafer of 150 mm by not more than 10 mm.
Similarly, the maximum width of the intermediate layer of 200 to 210 mm means that it is equal to or larger than the maximum width of the semiconductor wafer of 200 mm by not more than 10 mm.
Similarly, the maximum width of the intermediate layer of 300 to 310 mm means that it is equal to or larger than the maximum width of the semiconductor wafer of 300 mm by not exceeding 10 mm.
That is, in this embodiment, the difference between the maximum width of the intermediate layer and the maximum width of the semiconductor wafer may be, for example, 0 to 10 mm, regardless of whether the maximum width of the semiconductor wafer is 150 mm, 200 mm, or 300 mm.

The thickness of the intermediate layer can be appropriately selected depending on the purpose, but is preferably 5 to 150 μm, more preferably 5 to 120 μm, and may be, for example, any of 10 to 90 μm and 10 to 60 μm, or any of 30 to 120 μm and 60 to 120 μm. When the thickness of the intermediate layer is equal to or greater than the lower limit, the structure of the intermediate layer is more stable. When the thickness of the intermediate layer is equal to or less than the upper limit, the film-like adhesive can be cut more easily during blade dicing and the expansion of the sheet for manufacturing semiconductor device (film-like adhesive).
Here, "the thickness of the intermediate layer" means the thickness of the entire intermediate layer. For example, the thickness of an intermediate layer consisting of multiple layers means the total thickness of all layers that make up the intermediate layer.

When the intermediate layer contains the silicon-based resin, particularly when the compatibility between the silicon-based resin and the non-silicon-based resin (β1) which is the main component is low, the silicon-based resin in the intermediate layer in the semiconductor device manufacturing sheet is likely to be unevenly distributed on both sides (the first side and the opposite side) of the intermediate layer and the adjacent areas. And the stronger this tendency is, the easier it is for the film-like adhesive adjacent to (in direct contact with) the intermediate layer to peel off from the intermediate layer, and as described later, the easier it is to pick up the semiconductor chip with the film-like adhesive.
For example, when comparing intermediate layers that are different from each other only in thickness and are the same in other respects such as composition and the area of both sides, the ratio (mass%) of the content of the silicon-based resin to the total mass of the intermediate layer is the same in these intermediate layers. However, the content (mass parts) of the silicon-based resin in the intermediate layer is greater in the thick intermediate layer than in the thin intermediate layer. Therefore, when the silicon-based resin is likely to be unevenly distributed in the intermediate layer as described above, the thick intermediate layer will have a greater amount of silicon-based resin unevenly distributed on both sides (the first surface and the surface opposite thereto) and the adjacent areas than the thin intermediate layer. Therefore, even if the ratio is not changed, it is possible to adjust the pick-up suitability of the semiconductor chip with the film-like adhesive by adjusting the thickness of the intermediate layer in the semiconductor device manufacturing sheet. For example, by increasing the thickness of the intermediate layer in the semiconductor device manufacturing sheet, the semiconductor chip with the film-like adhesive can be picked up more easily.

The intermediate layer forming composition can be obtained by blending the respective components constituting the intermediate layer.
The composition for forming the intermediate layer can be produced, for example, by the same method as that for the pressure-sensitive adhesive composition described above, except that the types of blended components are different.

Film-like adhesive The film-like adhesive is preferably one having a curing property, a thermosetting property, and preferably one having a pressure-sensitive adhesive property. A film-like adhesive having both a thermosetting property and a pressure-sensitive adhesive property can be applied to various adherends by lightly pressing it against the adherend in an uncured state. The film-like adhesive may also be one that can be applied to various adherends by heating and softening it. The film-like adhesive finally becomes a cured product with high impact resistance by curing, and this cured product can maintain sufficient adhesive properties even under harsh conditions of high temperature and high humidity.

Preferred film adhesives include, for example, those containing a polymer component (a) and a thermosetting component (b).

The film-like adhesive may or may not contain the component (α2). Component (α2) is a component other than the polymer component (a) and may be the thermosetting component (b) or a component other than the thermosetting component (b).

The film-like adhesive may or may not contain a component (α1) that is solid at a temperature of 23° C. as the polymer component (a).
The film-like adhesive may or may not contain the polymer component (a) as the main component.
The film-like adhesive may or may not contain the component (α1) as the main component. When the component (α1) is the main component, the weight average molecular weight of the component (α1) is 20,000 or more, and the component that is contained in the film-like adhesive at the maximum amount (parts by mass) is the component (α1).

The film-like adhesive preferably contains the component (α1), and may contain both component (α1) and component (α2), or may contain component (α1) but not component (α2).

When the film-like adhesive contains component (α1) as the main component, it is preferable that component (α1) is an acrylic resin having structural units derived from a (meth)acrylic acid ester.

The film-like adhesive can be formed using an adhesive composition containing the constituent materials thereof. For example, the adhesive composition can be applied to a surface on which the film-like adhesive is to be formed, and then dried as necessary to form the film-like adhesive at the desired site.
The ratio of the contents of the components that do not vaporize at room temperature in the adhesive composition is usually the same as the ratio of the contents of the components in the film-like adhesive.

In the film-like adhesive, the proportion of the combined content of one or more components contained in the film-like adhesive, as described below, relative to the total mass of the film-like adhesive does not exceed 100 mass %.
Similarly, in the adhesive composition, the proportion of the total content of one or more components contained in the adhesive composition, which will be described later, relative to the total mass of the adhesive composition does not exceed 100 mass %.

The adhesive composition can be applied in the same manner as described above for applying the pressure-sensitive adhesive composition.

There are no particular limitations on the drying conditions for the adhesive composition. When the adhesive composition contains a solvent, which will be described later, it is preferable to heat-dry it. In this case, it is preferable to dry it, for example, at 70 to 130°C for 10 seconds to 5 minutes.

The film adhesive may consist of one layer (single layer) or may consist of two or more layers. If it consists of multiple layers, these multiple layers may be the same or different, and there are no particular limitations on the combination of these multiple layers.

When the semiconductor device manufacturing sheet is viewed from above in a plan view, it is preferable that the area of the film-like adhesive (i.e., the area of the first surface) is set smaller than the area of the base material (i.e., the area of the first surface) and the area of the adhesive layer (i.e., the area of the first surface) so as to be close to the area of the semiconductor wafer before division. In such a semiconductor device manufacturing sheet, a part of the first surface of the adhesive layer has an area (i.e., the non-laminated area) that is not in contact with the intermediate layer and the film-like adhesive. This makes it easier to expand the semiconductor device manufacturing sheet (film-like adhesive), and since the force applied to the film-like adhesive during expansion is not dispersed, the film-like adhesive can be cut more easily.

As explained above, the maximum width of the film-like adhesive is preferably smaller than the maximum width of the pressure-sensitive adhesive layer and the maximum width of the substrate.
The maximum width of the film adhesive may be the same as the maximum width of the intermediate layer described above with respect to the size of the semiconductor wafer.
That is, the maximum width of the film-like adhesive can be appropriately selected taking into consideration the size of the semiconductor wafer. For example, the maximum width of the film-like adhesive may be 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm. These three numerical ranges correspond to semiconductor wafers having a maximum width in a direction parallel to the attachment surface with the semiconductor device manufacturing sheet of 150 mm, 200 mm, or 300 mm.

In this specification, unless otherwise specified, the "width of the film-like adhesive" means, for example, "the width of the film-like adhesive in a direction parallel to the first surface of the film-like adhesive." For example, in the case of a film-like adhesive having a circular planar shape, the maximum value of the width of the film-like adhesive described above is the diameter of the circle that is the planar shape.
Furthermore, unless otherwise specified, the "width of the film-like adhesive" does not mean the width of the film-like adhesive after cutting during the manufacturing process of semiconductor chips with film-like adhesive described below, but rather the "width of the film-like adhesive before cutting (uncut)."

The maximum width of the film adhesive of 150 to 160 mm means that it is equal to or larger than the maximum width of the semiconductor wafer of 150 mm by a range not exceeding 10 mm.
Similarly, the maximum width of the film adhesive of 200 to 210 mm means that it is equal to or larger than the maximum width of the semiconductor wafer of 200 mm by not more than 10 mm.
Similarly, the maximum width of the film adhesive of 300 to 310 mm means that it is equal to or larger than the maximum width of the semiconductor wafer of 300 mm by a range not exceeding 10 mm.
That is, in this embodiment, the difference between the maximum width of the film-like adhesive and the maximum width of the semiconductor wafer may be, for example, 0 to 10 mm, regardless of whether the maximum width of the semiconductor wafer is 150 mm, 200 mm, or 300 mm.

In this embodiment, the maximum width of the intermediate layer and the maximum width of the film-like adhesive may both be within any of the above-mentioned numerical ranges.
That is, an example of a sheet for manufacturing a semiconductor device in this embodiment is one in which the maximum width of the intermediate layer and the maximum width of the film-like adhesive are both 150 to 160 mm, 200 to 210 mm, or 300 to 310 mm.

The thickness of the film-like adhesive is not particularly limited, but is preferably 1 to 30 μm, more preferably 2 to 20 μm, and particularly preferably 3 to 10 μm. When the thickness of the film-like adhesive is equal to or greater than the lower limit, a higher adhesive strength to the adherend (semiconductor chip) can be obtained. When the thickness of the film-like adhesive is equal to or less than the upper limit, the film-like adhesive can be cut more easily during blade dicing and during the expansion of the semiconductor device manufacturing sheet (film-like adhesive).
Here, "thickness of the film-like adhesive" means the thickness of the entire film-like adhesive; for example, the thickness of a film-like adhesive consisting of multiple layers means the total thickness of all layers that make up the film-like adhesive.
Next, the adhesive composition will be described.

<<Adhesive composition>>
A preferred adhesive composition includes, for example, one that contains a polymer component (a) and a thermosetting component (b).
In addition to these, the adhesive composition may or may not further contain the component (α2).
In the adhesive composition, the polymer component (a) may be the component (α1), or the polymer component (a) may be the main component.

Hereinafter, each component of the adhesive composition and the film-like adhesive will be described.
The adhesive composition shown below is a preferred example, and the adhesive composition in this embodiment is not limited to the one shown below.

[Polymer component (a)]
The polymer component (a) is a component that can be considered to be formed by a polymerization reaction of a polymerizable compound, and is a polymer compound that imparts film-forming properties, flexibility, etc. to the film-like adhesive and improves adhesion (in other words, stickability) to an adhesion target such as a semiconductor chip. The polymer component (a) has thermoplasticity and does not have thermosetting properties. In this specification, the polymer compound also includes the product of a polycondensation reaction.

The adhesive composition and the film-like adhesive may contain only one type of polymer component (a) or two or more types, and if there are two or more types, the combination and ratio of these can be selected arbitrarily.

Examples of the polymer component (a) include acrylic resins, urethane resins, phenoxy resins, silicone resins, and saturated polyester resins.
Of these, the polymer component (a) is preferably an acrylic resin.

In the adhesive composition, the ratio of the content of polymer component (a) to the total content of all components other than the solvent (i.e., the ratio of the content of polymer component (a) in the film-like adhesive to the total mass of the film-like adhesive) is preferably 20 to 75 mass%, and more preferably 30 to 65 mass%.

[Thermosetting component (b)]
The thermosetting component (b) has thermosetting properties and is a component for thermally curing the film-like adhesive.
The thermosetting component (b) contained in the adhesive composition and the film-like adhesive may be one type or two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.

Examples of the thermosetting component (b) include epoxy-based thermosetting resins, polyimide resins, and unsaturated polyester resins.
Among these, the thermosetting component (b) is preferably an epoxy-based thermosetting resin.

Epoxy-Based Thermosetting Resin The epoxy-based thermosetting resin is composed of an epoxy resin (b1) and a thermosetting agent (b2).
The adhesive composition and the film-like adhesive may contain only one type of epoxy thermosetting resin, or two or more types. When there are two or more types, the combination and ratio thereof can be selected arbitrarily.

Epoxy resin (b1)
The epoxy resin (b1) may be any known epoxy resin, such as a polyfunctional epoxy resin, a biphenyl compound, bisphenol A diglycidyl ether and its hydrogenated product, orthocresol novolac epoxy resin, a dicyclopentadiene type epoxy resin, a biphenyl type epoxy resin, a bisphenol A type epoxy resin, a bisphenol F type epoxy resin, or a phenylene skeleton type epoxy resin.

As the epoxy resin (b1), an epoxy resin having an unsaturated hydrocarbon group may be used. An epoxy resin having an unsaturated hydrocarbon group has a higher compatibility with acrylic resin than an epoxy resin not having an unsaturated hydrocarbon group. Therefore, by using an epoxy resin having an unsaturated hydrocarbon group, the reliability of the package obtained using the film-like adhesive is improved.

The epoxy resin (b1) contained in the adhesive composition and the film-like adhesive may be one type or two or more types, and if there are two or more types, the combination and ratio thereof can be selected arbitrarily.

Heat curing agent (b2)
The thermosetting agent (b2) functions as a curing agent for the epoxy resin (b1).
The thermosetting agent (b2) may be, for example, a compound having two or more functional groups capable of reacting with an epoxy group in one molecule. The functional group may, for example, be a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxyl group, or an anhydride group of an acid group, and is preferably a phenolic hydroxyl group, an amino group, or an anhydride group of an acid group, and more preferably a phenolic hydroxyl group or an amino group.

Among the heat curing agents (b2), examples of phenolic curing agents having a phenolic hydroxyl group include polyfunctional phenolic resins, biphenols, novolac-type phenolic resins, dicyclopentadiene-type phenolic resins, and aralkyl-type phenolic resins.
Among the heat curing agents (b2), examples of amine-based curing agents having an amino group include dicyandiamide (DICY) and the like.

The thermosetting agent (b2) may have an unsaturated hydrocarbon group.

The adhesive composition and the film-like adhesive may contain only one type of thermosetting agent (b2), or two or more types. If there are two or more types, the combination and ratio of these can be selected arbitrarily.

In the adhesive composition and the film-like adhesive, the content of the heat curing agent (b2) is preferably 0.1 to 500 parts by mass, more preferably 1 to 200 parts by mass, relative to 100 parts by mass of the epoxy resin (b1), and may be, for example, any of 1 to 100 parts by mass, 1 to 50 parts by mass, and 1 to 25 parts by mass. When the content of the heat curing agent (b2) is equal to or greater than the lower limit, the curing of the film-like adhesive proceeds more easily. When the content of the heat curing agent (b2) is equal to or less than the upper limit, the moisture absorption rate of the film-like adhesive is reduced, and the reliability of the package obtained using the film-like adhesive is further improved.

In the adhesive composition and film-like adhesive, the content of the thermosetting component (b) (e.g., the total content of the epoxy resin (b1) and the thermosetting agent (b2)) is preferably 5 to 100 parts by mass, more preferably 5 to 75 parts by mass, and particularly preferably 5 to 50 parts by mass, per 100 parts by mass of the polymer component (a), and may be, for example, either 5 to 35 parts by mass or 5 to 20 parts by mass. When the content of the thermosetting component (b) is within such a range, the peel force between the intermediate layer and the film-like adhesive becomes more stable.

When using a thermosetting component (b) (e.g., either one or both of an epoxy resin (b1) and a thermosetting agent (b2)) that is liquid at a temperature of 23°C and does not have a functional group that reacts with the main component contained in the film-like adhesive, it is preferable that the content of the component in the adhesive composition and film-like adhesive satisfies the numerical range separately specified below.

In order to improve various physical properties of the film-like adhesive, the adhesive composition and the film-like adhesive may contain, in addition to the polymer component (a) and the thermosetting component (b), other components not falling under these categories, as necessary.
Preferred examples of other components contained in the adhesive composition and the film-like adhesive include a curing accelerator (c), a filler (d), a coupling agent (e), a crosslinking agent (f), an energy ray-curable resin (g), a photopolymerization initiator (h), and a general-purpose additive (i).

[Curing Accelerator (c)]
The curing accelerator (c) is a component for adjusting the curing speed of the adhesive composition.
Preferred examples of the curing accelerator (c) include tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, and tris(dimethylaminomethyl)phenol; imidazoles (imidazoles in which one or more hydrogen atoms are substituted with groups other than hydrogen atoms) such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, and 2-phenyl-4-methyl-5-hydroxymethylimidazole; organic phosphines (phosphines in which one or more hydrogen atoms are substituted with organic groups) such as tributylphosphine, diphenylphosphine, and triphenylphosphine; and tetraphenylboron salts such as tetraphenylphosphonium tetraphenylborate and triphenylphosphine tetraphenylborate.

The adhesive composition and the film-like adhesive may contain only one type of curing accelerator (c) or two or more types, and if there are two or more types, the combination and ratio of these can be selected arbitrarily.

When the curing accelerator (c) is used, the content of the curing accelerator (c) in the adhesive composition and the film-like adhesive is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the content of the thermosetting component (b). When the content of the curing accelerator (c) is equal to or greater than the lower limit, the effect of using the curing accelerator (c) is more pronounced. When the content of the curing accelerator (c) is equal to or less than the upper limit, for example, the effect of suppressing the highly polar curing accelerator (c) from migrating to the adhesive interface with the adherend and segregating in the film-like adhesive under high temperature and high humidity conditions is enhanced, and the reliability of the package obtained using the film-like adhesive is further improved.
When using a curing accelerator (c) that is liquid at a temperature of 23°C and does not have a functional group that reacts with the main component contained in the film-like adhesive, it is preferable that the content of the curing accelerator (c) in the adhesive composition and the film-like adhesive satisfies the numerical range separately specified below.

[Filler (d)]
The film adhesive contains the filler (d), which improves its cuttability by expansion. In addition, the film adhesive contains the filler (d), which makes it easier to adjust its thermal expansion coefficient, and optimizing this thermal expansion coefficient for the object to which the film adhesive is attached improves the reliability of the package obtained using the film adhesive. In addition, the film adhesive contains the filler (d), which can reduce the moisture absorption rate of the film adhesive after curing and improve the heat dissipation.

The filler (d) may be either an organic filler or an inorganic filler, but is preferably an inorganic filler.
Preferred inorganic fillers include, for example, powders of silica, alumina, talc, calcium carbonate, titanium white, red iron oxide, silicon carbide, boron nitride, and the like; beads obtained by spheronizing these inorganic fillers; surface-modified products of these inorganic fillers; single crystal fibers of these inorganic fillers; glass fibers, and the like.
Among these, the inorganic filler is preferably silica or alumina.

The adhesive composition and the film-like adhesive may contain only one type of filler (d) or two or more types, and if there are two or more types, the combination and ratio of these can be selected arbitrarily.

When filler (d) is used, the ratio of the content of filler (d) to the total content of all components other than the solvent in the adhesive composition (i.e., the ratio of the content of filler (d) to the total mass of the film-like adhesive in the film-like adhesive) is preferably 5 to 80 mass%, more preferably 10 to 70 mass%, and particularly preferably 20 to 60 mass%. When the ratio is in this range, the effect of using the above-mentioned filler (d) can be obtained more significantly.

[Coupling agent (e)]
The film-like adhesive contains the coupling agent (e) to improve its adhesion and adhesion to the adherend. In addition, the film-like adhesive contains the coupling agent (e) to improve the water resistance of the cured product without impairing the heat resistance. The coupling agent (e) has a functional group capable of reacting with an inorganic compound or an organic compound.

The coupling agent (e) is preferably a compound having a functional group capable of reacting with the functional groups of the polymer component (a), the thermosetting component (b), etc., and is more preferably a silane coupling agent.

The coupling agent (e) contained in the adhesive composition and the film-like adhesive may be of only one type or of two or more types, and if there are two or more types, the combination and ratio thereof may be selected arbitrarily.

When the coupling agent (e) is used, the content of the coupling agent (e) in the adhesive composition and the film-like adhesive is preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, and particularly preferably 0.1 to 5 parts by mass, relative to 100 parts by mass of the total content of the polymer component (a) and the thermosetting component (b). When the content of the coupling agent (e) is equal to or greater than the lower limit, the effects of using the coupling agent (e), such as improved dispersibility of the filler (d) in the resin and improved adhesion of the film-like adhesive to the adherend, are more significantly obtained. When the content of the coupling agent (e) is equal to or less than the upper limit, the generation of outgassing is more suppressed.
When using a coupling agent (e) that is liquid at a temperature of 23°C and does not have a functional group that reacts with the main component contained in the film-like adhesive, it is preferable that the content of the coupling agent in the adhesive composition and the film-like adhesive satisfies the numerical range separately specified below.

[Crosslinking agent (f)]
When the polymer component (a) is one having a functional group capable of bonding with other compounds, such as a vinyl group, (meth)acryloyl group, amino group, hydroxyl group, carboxyl group, isocyanate group, etc., such as the above-mentioned acrylic resin, the adhesive composition and film-like adhesive may contain a crosslinking agent (f). The crosslinking agent (f) is a component for bonding the functional group in the polymer component (a) with other compounds to cause crosslinking, and by crosslinking in this manner, the initial adhesive strength and cohesive strength of the film-like adhesive can be adjusted.

Examples of the crosslinking agent (f) include organic polyisocyanate compounds, organic polyimine compounds, metal chelate-based crosslinking agents (crosslinking agents having a metal chelate structure), aziridine-based crosslinking agents (crosslinking agents having an aziridinyl group), etc.

When an organic polyisocyanate compound is used as the crosslinking agent (f), it is preferable to use a hydroxyl group-containing polymer as the polymer component (a). When the crosslinking agent (f) has an isocyanate group and the polymer component (a) has a hydroxyl group, a crosslinked structure can be easily introduced into the film-like adhesive by the reaction between the crosslinking agent (f) and the polymer component (a).

The crosslinking agent (f) contained in the adhesive composition and the film-like adhesive may be one type or two or more types, and if there are two or more types, the combination and ratio of these may be selected arbitrarily.

When the crosslinking agent (f) is used, the content of the crosslinking agent (f) in the adhesive composition is preferably 0.01 to 20 parts by mass, more preferably 0.1 to 10 parts by mass, and particularly preferably 0.3 to 5 parts by mass, relative to 100 parts by mass of the polymer component (a). When the content of the crosslinking agent (f) is equal to or greater than the lower limit, the effect of using the crosslinking agent (f) is more pronounced. When the content of the crosslinking agent (f) is equal to or less than the upper limit, excessive use of the crosslinking agent (f) is suppressed.
When using a crosslinking agent (f) that is liquid at a temperature of 23°C and does not have a functional group that reacts with the main component contained in the film-like adhesive, it is preferable that the content of the crosslinking agent in the adhesive composition and the film-like adhesive satisfies the numerical range separately specified below.

[Energy ray curable resin (g)]
By containing the energy ray-curable resin (g) in the adhesive composition and film-like adhesive, the properties of the film-like adhesive can be changed by irradiation with energy rays.

The energy ray curable resin (g) may be component (α1), but it is preferable that it is not component (α1).

The energy ray curable resin (g) is obtained from an energy ray curable compound.
The energy ray-curable compound includes, for example, a compound having at least one polymerizable double bond in the molecule, and is preferably an acrylate-based compound having a (meth)acryloyl group.

The adhesive composition may contain only one type of energy ray-curable resin (g) or two or more types, and if there are two or more types, the combination and ratio of these can be selected arbitrarily.

When an energy ray curable resin (g) is used, the content of the energy ray curable resin (g) in the adhesive composition relative to the total mass of the adhesive composition is preferably 1 to 95 mass%, more preferably 5 to 90 mass%, and particularly preferably 10 to 85 mass%.

[Photopolymerization initiator (h)]
When the adhesive composition and the film-like adhesive contain an energy ray-curable resin (g), they may contain a photopolymerization initiator (h) in order to efficiently proceed with the polymerization reaction of the energy ray-curable resin (g).

Examples of the photopolymerization initiator (h) in the adhesive composition include benzoin compounds such as benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, and benzoin dimethyl ketal; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, and 2,2-dimethoxy-1,2-diphenylethane-1-one; and acylphosphines such as bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide and 2,4,6-trimethylbenzoyldiphenylphosphine oxide. oxide compounds; sulfide compounds such as benzyl phenyl sulfide and tetramethylthiuram monosulfide; α-ketol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; benzyl; dibenzyl; benzophenone; 2,4-diethylthioxanthone; 1,2-diphenylmethane; 2-hydroxy-2-methyl-1-[4-(1-methylvinyl)phenyl]propanone; quinone compounds such as 1-chloroanthraquinone and 2-chloroanthraquinone.
Examples of the photopolymerization initiator (h) include photosensitizers such as amines.

The adhesive composition may contain only one type of photopolymerization initiator (h), or two or more types. If there are two or more types, the combination and ratio of these can be selected arbitrarily.

When a photopolymerization initiator (h) is used, the content of the photopolymerization initiator (h) in the adhesive composition is preferably 0.1 to 20 parts by mass, more preferably 1 to 10 parts by mass, and particularly preferably 2 to 5 parts by mass, relative to 100 parts by mass of the energy ray-curable resin (g).
When using a photopolymerization initiator (h) that is liquid at a temperature of 23°C and does not have a functional group that reacts with the main component contained in the film-like adhesive, it is preferable that the content of this photopolymerization initiator in the adhesive composition and the film-like adhesive satisfy the numerical range separately specified below.

[General-purpose additives (i)]
The general-purpose additive (i) may be a known one and may be arbitrarily selected depending on the purpose, and is not particularly limited. Preferred examples thereof include plasticizers, antistatic agents, antioxidants, colorants (dyes, pigments), gettering agents, and the like.

The adhesive composition and the film-like adhesive may contain only one type of general-purpose additive (i), or two or more types. If there are two or more types, the combination and ratio of these can be selected arbitrarily.

The contents of the adhesive composition and the film-like adhesive are not particularly limited and may be appropriately selected depending on the purpose.
When using a general-purpose additive (i) that is liquid at a temperature of 23°C and does not have a functional group that reacts with the main component contained in the film-like adhesive, it is preferable that the content of the general-purpose additive in the adhesive composition and the film-like adhesive satisfies the numerical range separately specified below.

[solvent]
The adhesive composition preferably further contains a solvent. An adhesive composition containing a solvent has good handleability.
The solvent is not particularly limited, but preferred examples thereof include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropan-1-ol), and 1-butanol; esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; and amides (compounds having an amide bond) such as dimethylformamide and N-methylpyrrolidone.
The adhesive composition may contain only one type of solvent, or two or more types. When two or more types are contained, the combination and ratio of the solvents can be selected arbitrarily.

The solvent contained in the adhesive composition is preferably methyl ethyl ketone or the like, since this allows the components in the adhesive composition to be mixed more uniformly.

The solvent content of the adhesive composition is not particularly limited and may be selected appropriately depending on, for example, the types of components other than the solvent.

[Component (α2)]
The component (α2) in the adhesive composition and the film-like adhesive is liquid at a temperature of 23° C. In addition, the component (α2) does not have a functional group that reacts with the main component contained in the film-like adhesive (i.e., does not react with the main component). A component that has a functional group that reacts with the main component contained in the film-like adhesive and is liquid at a temperature of 23° C. does not migrate from the film-like adhesive to the intermediate layer by reacting with the main component in the film-like adhesive, and as a result, does not migrate to the pressure-sensitive adhesive layer. In this embodiment, the component (α2) that does not have the functional group and is liquid at a temperature of 23° C., which cannot originally suppress migration from the film-like adhesive to the pressure-sensitive adhesive layer, is suppressed from migrating from the film-like adhesive to the pressure-sensitive adhesive layer, instead of the component that has the functional group and is liquid at a temperature of 23° C.
For example, when the main component has a hydroxyl group or an amino group, the functional group that reacts with the main component can be an isocyanate group.

The component (α2) is not particularly limited as long as it satisfies such conditions, and can be selected arbitrarily according to the purpose. The components contained in the adhesive composition that do not fall under any of the polymer component (a), the filler (d), the energy ray curable resin (g), and the solvent, that is, among the thermosetting components (b) (e.g., the epoxy resin (b1) and the thermosetting agent (b2)), the curing accelerator (c), the coupling agent (e), the crosslinking agent (f), the photopolymerization initiator (h), and the general-purpose additive (i), are liquid at a temperature of 23°C and do not have a functional group that reacts with the main component contained in the film-like adhesive, are the components (α2). Solvents are not usually contained in the film-like adhesive.
A preferred example of the component (α2) is an epoxy resin (b1).

The adhesive composition may contain only one type of component (α2) or two or more types, and if there are two or more types, the combination and ratio of these can be selected arbitrarily.

When the component (α2) is used, the content of the component (α2) in the adhesive composition can be appropriately adjusted depending on the type of the component (α2).
In the adhesive composition and film-like adhesive, the content of component (α2) is preferably 1 to 20 parts by mass per 100 parts by mass of the content of polymer component (a). By having the content be equal to or less than the upper limit, migration of component (α2) in the film-like adhesive to the pressure-sensitive adhesive layer is further suppressed. By having the content be equal to or more than the lower limit, the effects obtained by using component (α2) are further enhanced.

In particular, when component (α2) is epoxy resin (b1), the content of component (α2) (epoxy resin (b1)) in the adhesive composition and film-like adhesive is preferably 3 to 17 parts by mass, and more preferably 6 to 14 parts by mass, per 100 parts by mass of polymer component (a). When the content is equal to or less than the upper limit, migration of component (α2) in the film-like adhesive to the pressure-sensitive adhesive layer is further suppressed, and excessive use of component (α2) is suppressed. When the content is equal to or more than the lower limit, the effect obtained by using component (α2) is enhanced.

The film-like adhesive can be cut well by cooling and expanding it, as described below. In other words, the sheet for manufacturing semiconductor device of this embodiment is suitable for cutting the film-like adhesive by cooling and expanding the film-like adhesive.

<<Method of manufacturing adhesive composition>>
The adhesive composition can be obtained by blending the respective components constituting the adhesive composition.
The adhesive composition can be produced, for example, in the same manner as in the case of the pressure-sensitive adhesive composition described above, except that the types of ingredients used are different.

In the sheet for manufacturing semiconductor device of this embodiment, it is preferable that at least the film-like adhesive contains the component (α1) as a main component, or the pressure-sensitive adhesive layer contains the component (γ1) as a main component.
That is, examples of preferred sheets for manufacturing semiconductor device in this embodiment include a sheet for manufacturing semiconductor device in which the film-like adhesive contains the component (α1) as a main component and the pressure-sensitive adhesive layer does not contain the component (γ1) as a main component; a sheet for manufacturing semiconductor device in which the pressure-sensitive adhesive layer contains the component (γ1) as a main component and the film-like adhesive does not contain the component (α1) as a main component; and a sheet for manufacturing semiconductor device in which the film-like adhesive contains the component (α1) as a main component and the pressure-sensitive adhesive layer contains the component (γ1) as a main component.
In the sheet for producing semiconductor device, it is more preferable that the film-like adhesive contains the component (α1) as a main component, and the pressure-sensitive adhesive layer contains the component (γ1) as a main component.

In the sheet for manufacturing semiconductor device of this embodiment, it is more preferable that at least the film-like adhesive contains the component (α1) as a main component, or the pressure-sensitive adhesive layer contains the component (γ1) as a main component, and the component (α1) and the component (γ1) are acrylic resins having structural units derived from a (meth)acrylic acid ester.
That is, examples of more preferred semiconductor device manufacturing sheets in this embodiment include sheets for manufacturing semiconductor device in which the film-like adhesive contains the component (α1) as a main component, the pressure-sensitive adhesive layer does not contain the component (γ1) as a main component, and the component (α1) is an acrylic resin having a structural unit derived from a (meth)acrylic acid ester; sheets for manufacturing semiconductor device in which the pressure-sensitive adhesive layer contains the component (γ1) as a main component, the film-like adhesive does not contain the component (α1) as a main component, and the component (γ1) is an acrylic resin having a structural unit derived from a (meth)acrylic acid ester; and sheets for manufacturing semiconductor device in which the film-like adhesive contains the component (α1) as a main component, the pressure-sensitive adhesive layer contains the component (γ1) as a main component, and the components (α1) and (γ1) are acrylic resins having structural units derived from a (meth)acrylic acid ester.
Furthermore, in the sheet for manufacturing semiconductor device, it is further preferable that the film-like adhesive contains the component (α1) as a main component, the pressure-sensitive adhesive layer contains the component (γ1) as a main component, and the component (α1) and the component (γ1) are acrylic resins having structural units derived from a (meth)acrylic acid ester.

A preferred example of the sheet for manufacturing a semiconductor device according to the present embodiment includes a substrate, a pressure-sensitive adhesive layer, an intermediate layer, and a film-like adhesive,
the pressure-sensitive adhesive layer, the intermediate layer, and the film-like adhesive are laminated in this order on the base material,
the intermediate layer contains, as a main component, a non-silicon-based resin (β1) having a weight average molecular weight of 20,000 to 100,000;
Furthermore, the film-like adhesive contains a component (α2), and the pressure-sensitive adhesive layer contains a component (γ2),
the component (α2) is liquid at a temperature of 23° C. and does not have a functional group that reacts with the main component contained in the film-like adhesive,
the component (γ2) is liquid at a temperature of 23° C. and has no functional group that reacts with a main component contained in the pressure-sensitive adhesive layer;
The haze of the first test piece in the form of a film having a thickness of 10 μm and made of the non-silicon-based resin (β1) is H(β),
When the haze of a film-like second test piece having a thickness of 10 μm and made of a mixture of 100 parts by mass of the non-silicon-based resin (β1) and 10 parts by mass of the component (α2) is H(βα), the H(βα) and H(β) can be calculated by the following formula (X1):
(X1) H(βα)-H(β)>7%
Fulfilling
When the haze of a film-like third test piece having a thickness of 10 μm and made of a mixture of 100 parts by mass of the non-silicon-based resin (β1) and 10 parts by mass of the component (γ2) is H(βγ), the H(βγ) and H(β) are expressed by the following formula (X2):
(X2) H(βγ)-H(β)>7%
Fulfilling
Furthermore, the film-like adhesive contains as a main component a component (α1) that is solid at a temperature of 23° C., the component (α1) being a polymer component (a), the pressure-sensitive adhesive layer contains as a main component a component (γ1) that is solid at a temperature of 23° C., the component (γ1) being a pressure-sensitive adhesive,
The intermediate layer may contain, as the non-silicon-based resin (β1), one or more resins selected from the group consisting of ethylene-vinyl acetate copolymers and polyolefins.
In this sheet for manufacturing a semiconductor device, the intermediate layer may further contain a silicon-based resin.

Another preferred example of the sheet for manufacturing a semiconductor device according to the present embodiment includes a substrate, a pressure-sensitive adhesive layer, an intermediate layer, and a film-like adhesive,
the pressure-sensitive adhesive layer, the intermediate layer, and the film-like adhesive are laminated in this order on the base material,
the intermediate layer contains, as a main component, a non-silicon-based resin (β1) having a weight average molecular weight of 20,000 to 100,000;
Furthermore, the film-like adhesive contains a component (α2), and the pressure-sensitive adhesive layer contains a component (γ2),
the component (α2) is an epoxy resin (b1) that is liquid at a temperature of 23° C. and does not have a functional group that reacts with the main component contained in the film-like adhesive,
the component (γ2) is an antistatic agent that is liquid at a temperature of 23° C. and does not have a functional group that reacts with a main component contained in the pressure-sensitive adhesive layer,
The haze of the first test piece in the form of a film having a thickness of 10 μm and made of the non-silicon-based resin (β1) is H(β),
When the haze of a film-like second test piece having a thickness of 10 μm and made of a mixture of 100 parts by mass of the non-silicon-based resin (β1) and 10 parts by mass of the component (α2) is H(βα), the H(βα) and H(β) can be calculated by the following formula (X1):
(X1) H(βα)-H(β)>7%
Fulfilling
When the haze of a film-like third test piece having a thickness of 10 μm and made of a mixture of 100 parts by mass of the non-silicon-based resin (β1) and 10 parts by mass of the component (γ2) is H(βγ), the H(βγ) and H(β) are expressed by the following formula (X2):
(X2) H(βγ)-H(β)>7%
Fulfilling
Furthermore, the film-like adhesive contains as a main component a component (α1) that is solid at a temperature of 23° C., the component (α1) being a polymer component (a), the pressure-sensitive adhesive layer contains as a main component a component (γ1) that is solid at a temperature of 23° C., the component (γ1) being a pressure-sensitive adhesive,
the intermediate layer contains an ethylene-vinyl acetate copolymer as the non-silicon-based resin (β1),
In the film-like adhesive, the content of the epoxy resin (b1) is 1 to 20 parts by mass per 100 parts by mass of the polymer component (a),
In the pressure-sensitive adhesive layer, the content of the antistatic agent is 0.1 to 10 parts by mass with respect to 100 parts by mass of the pressure-sensitive adhesive;
In the ethylene-vinyl acetate copolymer, the ratio of the mass of structural units derived from vinyl acetate to the total mass of all structural units is 45 mass % or less.
In this sheet for manufacturing semiconductor device, in the ethylene-vinyl acetate copolymer, the ratio of the mass of structural units derived from vinyl acetate to the total mass of all structural units may be 30 mass % or less.
In this sheet for manufacturing semiconductor device, the intermediate layer may further contain a silicon-based resin, and in that case, the content of the silicon-based resin in the intermediate layer may be 0.01 to 10 mass % relative to the total mass of the intermediate layer.

Yet another example of a preferable sheet for manufacturing a semiconductor device according to the present embodiment includes a substrate, a pressure-sensitive adhesive layer, an intermediate layer, and a film-like adhesive,
the pressure-sensitive adhesive layer, the intermediate layer, and the film-like adhesive are laminated in this order on the base material,
the intermediate layer contains, as a main component, a non-silicon-based resin (β1) having a weight average molecular weight of 20,000 to 100,000;
Furthermore, the film-like adhesive contains a component (α2), and the pressure-sensitive adhesive layer contains a component (γ2),
the component (α2) is an epoxy resin (b1) that is liquid at a temperature of 23° C. and does not have a functional group that reacts with the main component contained in the film-like adhesive,
the component (γ2) is an antistatic agent that is liquid at a temperature of 23° C. and does not have a functional group that reacts with a main component contained in the pressure-sensitive adhesive layer,
The haze of the first test piece in the form of a film having a thickness of 10 μm and made of the non-silicon-based resin (β1) is H(β),
When the haze of a film-like second test piece having a thickness of 10 μm and made of a mixture of 100 parts by mass of the non-silicon-based resin (β1) and 10 parts by mass of the component (α2) is H(βα), the H(βα) and H(β) can be calculated by the following formula (X1):
(X1) H(βα)-H(β)>7%
Fulfilling
When the haze of a film-like third test piece having a thickness of 10 μm and made of a mixture of 100 parts by mass of the non-silicon-based resin (β1) and 10 parts by mass of the component (γ2) is H(βγ), the H(βγ) and H(β) are expressed by the following formula (X2):
(X2) H(βγ)-H(β)>7%
Fulfilling
Further, the film-like adhesive contains as a main component a component (α1) that is solid at a temperature of 23° C., the component (α1) being a polymer component (a), the pressure-sensitive adhesive layer contains as a main component a component (γ1) that is solid at a temperature of 23° C., the component (γ1) being a pressure-sensitive adhesive, and the polymer component (a) and the pressure-sensitive adhesive are acrylic resins having structural units derived from a (meth)acrylic acid ester,
the intermediate layer contains an ethylene-vinyl acetate copolymer as the non-silicon-based resin (β1),
In the film-like adhesive, the content of the epoxy resin (b1) is 1 to 20 parts by mass per 100 parts by mass of the polymer component (a),
In the pressure-sensitive adhesive layer, the content of the antistatic agent is 0.1 to 10 parts by mass with respect to 100 parts by mass of the pressure-sensitive adhesive;
In the ethylene-vinyl acetate copolymer, the ratio of the mass of structural units derived from vinyl acetate to the total mass of all structural units is 45 mass % or less.
In this sheet for manufacturing semiconductor device, in the ethylene-vinyl acetate copolymer, the ratio of the mass of structural units derived from vinyl acetate to the total mass of all structural units may be 30 mass % or less.
In this sheet for manufacturing semiconductor device, the intermediate layer may further contain polydimethylsiloxane, and in that case, the content of the polydimethylsiloxane in the intermediate layer may be 0.01 to 10 mass % relative to the total mass of the intermediate layer.

Manufacturing Method of the Sheet for Manufacturing a Semiconductor Device The sheet for manufacturing a semiconductor device can be manufactured by laminating the above-mentioned layers so that they are in a corresponding positional relationship. The method of forming each layer is as described above.

For example, the semiconductor device manufacturing sheet can be manufactured by preparing the base material, pressure-sensitive adhesive layer, intermediate layer and film-like adhesive in advance, and laminating these in the following order: base material, pressure-sensitive adhesive layer, intermediate layer and film-like adhesive.
However, this is just one example of a method for producing a sheet for manufacturing a semiconductor device.

The semiconductor device manufacturing sheet can also be manufactured by, for example, preparing two or more intermediate laminates in advance, each of which is composed of a plurality of layers stacked together, and bonding these intermediate laminates together. The configuration of the intermediate laminate can be selected as appropriate. For example, a first intermediate laminate (corresponding to the support sheet) having a configuration in which a base material and an adhesive layer are stacked, and a second intermediate laminate having a configuration in which an intermediate layer and a film-like adhesive are stacked, are prepared in advance, and the adhesive layer in the first intermediate laminate and the intermediate layer in the second intermediate laminate are bonded together to manufacture the semiconductor device manufacturing sheet.
However, this is also just one example of the method for producing a sheet for manufacturing semiconductor device.

When manufacturing the semiconductor device manufacturing sheet as shown in FIG. 1, for example, in which the area of the first side of the intermediate layer and the area of the first side of the film-like adhesive are both smaller than the areas of the first side of the pressure-sensitive adhesive layer and the first side of the substrate, a process of processing the intermediate layer and the film-like adhesive to a desired size may be added at any stage of the above-mentioned manufacturing method. For example, in the manufacturing method using the second intermediate laminate, a process of processing the intermediate layer and the film-like adhesive in the second intermediate laminate to a desired size may be added to manufacture a semiconductor device manufacturing sheet.

When manufacturing a sheet for manufacturing semiconductor device with a release film on the film-like adhesive, for example, the film-like adhesive may be prepared on the release film, and the remaining layers may be laminated while maintaining this state to produce the sheet for manufacturing semiconductor device, or the base material, pressure-sensitive adhesive layer, intermediate layer, and film-like adhesive may all be laminated, and then the release film may be laminated on the film-like adhesive to produce the sheet for manufacturing semiconductor device. The release film may be removed at any stage necessary before the sheet for manufacturing semiconductor device is used.

A sheet for manufacturing semiconductor device that has another layer that does not fall into any of the following categories: a substrate, an adhesive layer, an intermediate layer, a film-like adhesive, or a release film, can be manufactured by adding a step of forming and laminating this other layer at an appropriate time in the manufacturing method described above.

However, in order to manufacture the sheet for manufacturing semiconductor device, it is necessary to select a combination of the non-silicon-based resin (β1) in the film-like adhesive and the component (α2) in the intermediate layer that satisfies the above formula (X1), or to select a combination of the non-silicon-based resin (β1) in the film-like adhesive and the component (γ2) in the pressure-sensitive adhesive layer that satisfies the above formula (X2).

That is, the present embodiment is a method for producing a sheet for manufacturing a semiconductor device,
The sheet for manufacturing a semiconductor device includes a substrate, a pressure-sensitive adhesive layer, an intermediate layer, and a film-like adhesive,
the pressure-sensitive adhesive layer, the intermediate layer, and the film-like adhesive are laminated in this order on the base material,
the intermediate layer contains, as a main component, a non-silicon-based resin (β1) having a weight average molecular weight of 20,000 to 100,000;
Furthermore, at least the film-like adhesive contains a component (α2) or the pressure-sensitive adhesive layer contains a component (γ2),
the component (α2) is liquid at a temperature of 23° C. and does not have a functional group that reacts with the main component contained in the film-like adhesive,
the component (γ2) is liquid at a temperature of 23° C. and has no functional group that reacts with a main component contained in the pressure-sensitive adhesive layer;
The haze of the first test piece in the form of a film having a thickness of 10 μm and made of the non-silicon-based resin (β1) is H(β),
In the case where the film-like adhesive contains the component (α2), when the haze of a film-like second test piece having a thickness of 10 μm and made of a mixture of 100 parts by mass of the non-silicon-based resin (β1) and 10 parts by mass of the component (α2) is H(βα), H(βα) and H(β) can be calculated by the following formula (X1):
(X1) H(βα)-H(β)>7%
Fulfilling
In the case where the pressure-sensitive adhesive layer contains the component (γ2), when the haze of a film-like third test piece having a thickness of 10 μm and made of a mixture of 100 parts by mass of the non-silicon-based resin (β1) and 10 parts by mass of the component (γ2) is H(βγ), H(βγ) and H(β) can be expressed by the following formula (X2):
(X2) H(βγ)-H(β)>7%
Fulfilling
The manufacturing method includes either or both of a film-like adhesive preparation step of preparing the film-like adhesive containing the component (α2) and a pressure-sensitive adhesive layer preparation step of preparing the pressure-sensitive adhesive layer containing the component (γ2).

Thus, the manufacturing method for a semiconductor device manufacturing sheet of this embodiment may be a manufacturing method that has the film-like adhesive manufacturing step but does not have the pressure-sensitive adhesive layer manufacturing step, or a manufacturing method that has the pressure-sensitive adhesive layer manufacturing step but does not have the film-like adhesive manufacturing step, or a manufacturing method that has both the film-like adhesive manufacturing step and the pressure-sensitive adhesive layer manufacturing step, depending on the desired configuration of the semiconductor device manufacturing sheet.
In the film-like adhesive preparation step, a film-like adhesive is prepared using the adhesive composition containing component (α2).
In the pressure-sensitive adhesive layer preparation step, a pressure-sensitive adhesive layer is prepared using the pressure-sensitive adhesive composition containing component (γ2).

◇Manufacturing method for semiconductor chips with film-like adhesive (Method of using sheets for manufacturing semiconductor device)
The sheet for manufacturing a semiconductor device can be used when manufacturing a semiconductor chip with a film-like adhesive in the process of manufacturing a semiconductor device.
Hereinafter, the method for producing a semiconductor chip with a film-like adhesive (method for using the sheet for producing semiconductor device) will be described in detail with reference to the drawings.

Figures 3A, 3B, and 3C are cross-sectional views for explaining an example of a method for manufacturing a semiconductor chip with a film-like adhesive, and show a manufacturing method in which a semiconductor device manufacturing sheet is attached to a semiconductor wafer before use. In this method, the semiconductor device manufacturing sheet is used as a dicing die bonding sheet. Here, an example will be explained in which the semiconductor device manufacturing sheet 101 shown in Figure 1 is used.

First, as shown in FIG. 3A, the sheet 101 for manufacturing semiconductor device from which the release film 15 has been removed is heated, and the film-like adhesive 14 therein is attached to the rear surface 9b' of the semiconductor wafer 9'.
Reference numeral 9a' denotes a surface of the semiconductor wafer 9' on which circuits are formed.

The heating temperature when attaching the semiconductor device manufacturing sheet 101 is not particularly limited, but it is preferable that it be 40 to 70°C in order to further improve the thermal attachment stability of the semiconductor device manufacturing sheet 101.

It is preferable that the maximum value of the width _W13 of the intermediate layer 13 in the semiconductor device manufacturing sheet 101 and the maximum value of the width _W14 of the film-like adhesive 14 are either exactly the same as the maximum value of the width W9 _' of the semiconductor wafer 9', or, although not the same, are approximately equal with only minor error.

For example, when the maximum width _W9' of the semiconductor wafer 9' is 150 mm, the maximum value of the width W13 of the intermediate layer ₁₃ and the maximum value of the width _W14 of the film-like adhesive 14 are preferably 150 to 160 mm; when the maximum value of the width W9 _' of the semiconductor wafer 9' is 200 mm, the maximum value of the width _W13 of the intermediate layer 13 and the maximum value of the width _W14 of the film-like adhesive 14 are preferably 200 to 210 mm; and when the maximum value of the width _W9 ' of the semiconductor wafer 9' is 300 mm, the maximum value of the width _W13 of the intermediate layer 13 and the maximum value of the width _W14 of the film-like adhesive 14 are preferably 300 to 310 mm.
Thus, in this embodiment, the difference between the maximum value of the width _W13 of the intermediate layer 13 and the maximum value of the width W9 _' of the semiconductor wafer 9', and the difference between the maximum value of the width _W14 of the film-like adhesive 14 and the maximum value of the width W9 _' of the semiconductor wafer 9' may each be 0 to 10 mm.
Here, the width W9 _' of the semiconductor wafer 9' means, for example, the width of the semiconductor wafer 9' in a direction parallel to the rear surface 9b' thereof.

Next, the laminate of the semiconductor device manufacturing sheet 101 and the semiconductor wafer 9' obtained above is cut with a blade from the circuit formation surface 9a' side of the semiconductor wafer 9' (blade dicing is performed) to divide the semiconductor wafer 9' and cut the film-like adhesive 14.

Blade dicing can be performed by a known method. For example, the area (the non-laminated area) near the periphery of the first surface 12a of the adhesive layer 12 in the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film-like adhesive 14 are not laminated can be fixed to a jig such as a ring frame (not shown), and then the semiconductor wafer 9' can be divided and the film-like adhesive 14 can be cut using a blade.

3B, a plurality of semiconductor chips 914 with a film-like adhesive are obtained, each of which includes a semiconductor chip 9 and a cut film-like adhesive 140 provided on the back surface 9b of the semiconductor chip 9. These semiconductor chips 914 with a film-like adhesive are aligned and fixed on the intermediate layer 13 in the laminated sheet 10, constituting a group 910 of semiconductor chips with a film-like adhesive.
A back surface 9b of the semiconductor chip 9 corresponds to a back surface 9b' of the semiconductor wafer 9'. In Fig. 3B, reference numeral 9a denotes a circuit forming surface of the semiconductor chip 9, which corresponds to a circuit forming surface 9a' of the semiconductor wafer 9'.

During blade dicing, the semiconductor wafer 9' is divided by cutting into it across its entire thickness, and the semiconductor device manufacturing sheet 101 is cut from the first surface 14a of the film-like adhesive 14 to the area halfway through the intermediate layer 13, cutting the film-like adhesive 14 across its entire thickness, preferably without cutting into the pressure-sensitive adhesive layer 12.
In other words, during blade dicing, it is preferable that the blade cuts into the laminate of the semiconductor device manufacturing sheet 101 and the semiconductor wafer 9' in the stacking direction from the circuit formation surface 9a' of the semiconductor wafer 9' to at least the first surface 13a of the intermediate layer 13, but not to the surface opposite the first surface 13a of the intermediate layer 13 (i.e., the contact surface with the adhesive layer 12).

In this process, it is easy to prevent the blade from reaching the substrate 11, thereby suppressing the generation of cutting debris from the substrate 11. Furthermore, since the main component of the intermediate layer 13 cut by the blade is a non-silicon-based resin (β1) having a weight average molecular weight of 20,000 to 100,000, and in particular, the weight average molecular weight is 100,000 or less, the generation of cutting debris from the intermediate layer 13 can also be suppressed.

The conditions for the blade dicing may be appropriately adjusted depending on the purpose, and are not particularly limited.
In general, the rotation speed of the blade is preferably 15,000 to 50,000 rpm, and the movement speed of the blade is preferably 5 to 85 mm/sec, and may be 5 to 75 mm/sec.

After blade dicing, the semiconductor chip 914 with the film-like adhesive is separated from the intermediate layer 13 in the laminated sheet 10 and picked up, as shown in Fig. 3C. Here, a case is shown in which the semiconductor chip 914 with the film-like adhesive is separated in the direction of arrow P using a separating means 7 such as a vacuum collet. Note that the separating means 7 is not shown in cross section here.
The semiconductor chip 914 with the film-like adhesive attached can be picked up by a known method.

When the silicon concentration ratio on the first surface 13a of the intermediate layer 13 is 1 to 20%, the semiconductor chip 914 with the film adhesive attached can be picked up more easily.
When the intermediate layer 13 contains, for example, an ethylene-vinyl acetate copolymer, which is the non-silicon-based resin (β1), and a siloxane-based compound, which is the additive, and the content of the ethylene-vinyl acetate copolymer in the intermediate layer relative to the total mass of the intermediate layer is 90 to 99.99 mass%, and the content of the siloxane-based compound in the intermediate layer relative to the total mass of the intermediate layer is 0.01 to 10 mass%, the semiconductor chip 914 with the film-like adhesive can be picked up more easily.

A preferred embodiment of the method for producing a semiconductor chip with a film-like adhesive described above is, for example, a method for producing a semiconductor chip with a film-like adhesive using a sheet for manufacturing a semiconductor device,
The semiconductor chip with a film-like adhesive includes a semiconductor chip and a film-like adhesive provided on a back surface of the semiconductor chip,
The sheet for manufacturing a semiconductor device includes a substrate, a pressure-sensitive adhesive layer, an intermediate layer, and a film-like adhesive,
the pressure-sensitive adhesive layer, the intermediate layer, and the film-like adhesive are laminated in this order on the base material,
the intermediate layer contains, as a main component, a non-silicon-based resin (β1) having a weight average molecular weight of 20,000 to 100,000;
Furthermore, at least the film-like adhesive contains a component (α2) or the pressure-sensitive adhesive layer contains a component (γ2),
the component (α2) is liquid at a temperature of 23° C. and does not have a functional group that reacts with the main component contained in the film-like adhesive,
the component (γ2) is liquid at a temperature of 23° C. and has no functional group that reacts with a main component contained in the pressure-sensitive adhesive layer;
The haze of a film-like test piece having a thickness of 10 μm and made of the non-silicon-based resin (β1) is H(β),
In the case where the film-like adhesive contains the component (α2), when the haze of a film-like second test piece having a thickness of 10 μm and made of a mixture of 100 parts by mass of the non-silicon-based resin (β1) and 10 parts by mass of the component (α2) is H(βα), H(βα) and H(β) can be calculated by the following formula (X1):
(X1) H(βα)-H(β)>7%
Fulfilling
In the case where the pressure-sensitive adhesive layer contains the component (γ2), when the haze of a film-like third test piece having a thickness of 10 μm and made of a mixture of 100 parts by mass of the non-silicon-based resin (β1) and 10 parts by mass of the component (γ2) is H(βγ), H(βγ) and H(β) can be expressed by the following formula (X2):
(X2) H(βγ)-H(β)>7%
Fulfilling
The manufacturing method includes a step of attaching the film-like adhesive in the semiconductor device manufacturing sheet to a back surface of the semiconductor wafer while heating the sheet;
a step of cutting the semiconductor wafer to which the film-like adhesive has been applied from the circuit formation surface side across the entire thickness direction to divide the semiconductor chips, and cutting the semiconductor device manufacturing sheet in the thickness direction from the film-like adhesive side to an area halfway through the intermediate layer to cut the film-like adhesive, but not cutting into the pressure-sensitive adhesive layer, thereby obtaining a group of semiconductor chips with a film-like adhesive in which a plurality of the semiconductor chips with the film-like adhesive are aligned on the intermediate layer;
and a step of separating the semiconductor chip with the film-like adhesive from the intermediate layer and picking it up (sometimes referred to as "manufacturing method 1" in this specification).

Figures 4A, 4B, and 4C are cross-sectional views for illustrating an example of a method for manufacturing semiconductor chips for which a semiconductor device manufacturing sheet is used, and show the case where semiconductor chips are manufactured by performing dicing involving the formation of a modified layer on a semiconductor wafer.
5A, 5B, and 5C are cross-sectional views for explaining another example of a method for manufacturing a semiconductor chip with a film-like adhesive, and show a manufacturing method in which a semiconductor device manufacturing sheet is attached to a semiconductor chip before use. In this method, the semiconductor device manufacturing sheet is used as a die bonding sheet. Here, the method of use will be explained using the semiconductor device manufacturing sheet 101 shown in FIG. 1 as an example.

First, prior to using the semiconductor device manufacturing sheet 101, as shown in FIG. 4A, a semiconductor wafer 9' is prepared, and a backgrind tape (sometimes called a "surface protection tape") 8 is attached to its circuit formation surface 9a'.
In FIG. 4A, the symbol W9 _' denotes the width of the semiconductor wafer 9'.

Next, a laser beam (not shown) is irradiated so as to be focused at a focal point set inside the semiconductor wafer 9', thereby forming a modified layer 90' inside the semiconductor wafer 9' as shown in FIG. 4B.
The laser light is preferably applied to the semiconductor wafer 9' from the rear surface 9b' side of the semiconductor wafer 9'.

The focal position at this time is the intended dividing (dicing) position of the semiconductor wafer 9', and is set so that the desired size, shape and number of semiconductor chips are obtained from the semiconductor wafer 9'.

Next, a grinder (not shown) is used to grind the back surface 9b' of the semiconductor wafer 9'. This adjusts the thickness of the semiconductor wafer 9' to a desired value, and the grinding force applied to the semiconductor wafer 9' at this time is used to divide the semiconductor wafer 9' at the portion where the modified layer 90' is formed, producing multiple semiconductor chips 9 as shown in FIG. 4C.

The modified layer 90' of the semiconductor wafer 9' is different from other parts of the semiconductor wafer 9' in that it has been altered by the irradiation of the laser light and has a weakened strength. Therefore, by applying force to the semiconductor wafer 9' on which the modified layer 90' is formed, the force is applied to the modified layer 90', and the semiconductor wafer 9' is cracked at the site of the modified layer 90', and multiple semiconductor chips 9 are obtained.

This process results in the semiconductor chips 9 that are the subject of the semiconductor device manufacturing sheet 101. More specifically, this process results in a semiconductor chip group 901 in which multiple semiconductor chips 9 are aligned and fixed on the backgrind tape 8.

When the semiconductor chip group 901 is viewed from above in a planar view, the planar shape formed by connecting the outermost portions of the semiconductor chip group 901 (in this specification, such a planar shape may be simply referred to as the "planar shape of the semiconductor chip group") is exactly the same as the planar shape of the semiconductor wafer 9' when viewed in a similar planar view, or the differences between these planar shapes are so minor that they can be ignored, and it can be said that the planar shape of the semiconductor chip group 901 is generally the same as the planar shape of the semiconductor wafer 9'.
4C, the width of the planar shape of the semiconductor chip group 901 can be regarded as being the same as the width W9 _' of the semiconductor wafer 9'. Also, the maximum value of the width of the planar shape of the semiconductor chip group 901 can be regarded as being the same as the maximum value of the width W9 _' of the semiconductor wafer 9'.

Note that, although the example shown here shows a case where semiconductor chips 9 can be produced as intended from the semiconductor wafer 9', depending on the conditions when grinding the back surface 9b' of the semiconductor wafer 9', separation into semiconductor chips 9 may not occur in some areas of the semiconductor wafer 9'.

Next, the semiconductor chips 9 (semiconductor chip group 901) obtained above are used to manufacture semiconductor chips with a film-like adhesive.
5A, one semiconductor device manufacturing sheet 101 from which release film 15 has been removed is heated, and film-like adhesive 14 therein is attached to the back surfaces 9b of all the semiconductor chips 9 in the semiconductor chip group 901. The object to which film-like adhesive 14 is attached at this time may be a semiconductor wafer that has not been completely divided.

It is preferable that the maximum value of the width _W13 of the intermediate layer 13 in the semiconductor device manufacturing sheet 101 and the maximum value of the width _W14 of the film-like adhesive 14 are either exactly the same as the maximum value of the width W9 _' of the semiconductor wafer 9' (in other words, the width of the semiconductor chip group 901), or, although not identical, are approximately equal with only minor error.

That is, the relationship between the maximum value of width _W13 of intermediate layer 13 and the maximum value of width W9' of semiconductor wafer 9' may be the same as the relationship between the maximum value of width _W13 of intermediate layer 13 and the maximum value of width W9 _' of semiconductor wafer 9' described above. And the relationship between the maximum value of width _W14 of film-like adhesive 14 and the maximum value of width W9' of semiconductor wafer 9' may be the same as the relationship between the maximum value of width _W14 of film-like adhesive 14 and the maximum value of width W9 _' of semiconductor wafer 9' described above.

At this time, the attachment of the film-like adhesive 14 (semiconductor device manufacturing sheet 101) to the semiconductor chip group 901 can be carried out in the same manner as the attachment of the film-like adhesive 14 (semiconductor device manufacturing sheet 101) to the semiconductor wafer 9' in the manufacturing method 1, except that the semiconductor chip group 901 is used instead of the semiconductor wafer 9'.

Next, the backgrind tape 8 is removed from the semiconductor chip group 901 in this fixed state. Then, as shown in Fig. 5B, the semiconductor device manufacturing sheet 101 (film-like adhesive 14) is expanded by being stretched in a direction parallel to its surface (e.g., the first surface 12a of the pressure-sensitive adhesive layer 12) while being cooled. Here, the direction of expansion of the semiconductor device manufacturing sheet 101 is indicated by arrow _E1 . By expanding in this manner, the film-like adhesive 14 is cut along the outer periphery of the semiconductor chip 9.

This process provides a plurality of semiconductor chips 914 with a film-like adhesive, each of which includes a semiconductor chip 9 and a cut film-like adhesive 140 provided on the back surface 9b of the semiconductor chip 9. These semiconductor chips 914 with a film-like adhesive are aligned and fixed on the intermediate layer 13 in the laminated sheet 10, constituting a group 910 of semiconductor chips with a film-like adhesive.
The semiconductor chip 914 with film-like adhesive and the group of semiconductor chips 910 with film-like adhesive obtained here are both substantially the same as the semiconductor chip 914 with film-like adhesive and the group of semiconductor chips 910 with film-like adhesive obtained by the manufacturing method 1 described above.

As explained above, if a portion of the semiconductor wafer 9' is not divided into semiconductor chips 9 when the semiconductor wafer 9' is divided, this region is divided into semiconductor chips by carrying out this process.

It is preferable to expand the semiconductor device manufacturing sheet 101 (film-like adhesive 14) at a temperature of -5 to 5°C. By cooling and expanding the semiconductor device manufacturing sheet 101 in this manner (performing cool expansion), the film-like adhesive 14 can be cut more easily and with higher precision.

The semiconductor device manufacturing sheet 101 (film-like adhesive) can be expanded by a known method. For example, the region (the non-laminated region) near the periphery of the first surface 12a of the adhesive layer 12 in the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film-like adhesive 14 are not laminated is fixed to a jig such as a ring frame (not shown), and then the entire region of the semiconductor device manufacturing sheet 101 where the intermediate layer 13 and the film-like adhesive 14 are laminated is pushed up from the substrate 11 side in the direction from the substrate 11 toward the adhesive layer 12, thereby expanding the semiconductor device manufacturing sheet 101.

In FIG. 5B, the non-laminated region of the first surface 12a of the adhesive layer 12, where the intermediate layer 13 and the film-like adhesive 14 are not laminated, is approximately parallel to the first surface 13a of the intermediate layer 13. However, as described above, when the semiconductor device manufacturing sheet 101 is expanded by being pushed up, the non-laminated region includes an inclined surface whose height decreases in the opposite direction to the pushing-up direction as it approaches the outer periphery of the adhesive layer 12.

In this process, the semiconductor device manufacturing sheet 101 is provided with an intermediate layer 13 (in other words, the film-like adhesive 14 before cutting is provided on the intermediate layer 13), so that the film-like adhesive 14 can be cut precisely at the desired location (in other words, along the outer periphery of the semiconductor chip 9), thereby preventing cutting defects.

After the expansion, as shown in FIG. 5C, the semiconductor chip 914 with the film-like adhesive attached is separated from the intermediate layer 13 in the laminated sheet 10 and picked up.
The pick-up at this time can be performed in the same manner as the pick-up in the manufacturing method 1 described above, and the pick-up suitability is also the same as that in the manufacturing method 1.

For example, in this process, when the silicon concentration ratio on the first surface 13a of the intermediate layer 13 is 1 to 20%, the semiconductor chip 914 with the film-like adhesive can be picked up more easily.
Furthermore, when the intermediate layer 13 contains, for example, an ethylene-vinyl acetate copolymer which is the non-silicon-based resin and a siloxane-based compound which is the additive, and the content of the ethylene-vinyl acetate copolymer in the intermediate layer relative to the total mass of the intermediate layer is 90 to 99.99 mass%, and the content of the siloxane-based compound in the intermediate layer relative to the total mass of the intermediate layer is 0.01 to 10 mass%, the semiconductor chip 914 with the film-like adhesive can be picked up more easily.

A preferred embodiment of the method for producing a semiconductor chip with a film-like adhesive described above is, for example, a method for producing a semiconductor chip with a film-like adhesive using a sheet for manufacturing a semiconductor device,
The semiconductor chip with a film-like adhesive includes a semiconductor chip and a film-like adhesive provided on a back surface of the semiconductor chip,
The sheet for manufacturing a semiconductor device includes a substrate, a pressure-sensitive adhesive layer, an intermediate layer, and a film-like adhesive,
the pressure-sensitive adhesive layer, the intermediate layer, and the film-like adhesive are laminated in this order on the base material,
the intermediate layer contains, as a main component, a non-silicon-based resin (β1) having a weight average molecular weight of 20,000 to 100,000;
Furthermore, at least the film-like adhesive contains a component (α2) or the pressure-sensitive adhesive layer contains a component (γ2),
the component (α2) is liquid at a temperature of 23° C. and does not have a functional group that reacts with the main component contained in the film-like adhesive,
the component (γ2) is liquid at a temperature of 23° C. and has no functional group that reacts with a main component contained in the pressure-sensitive adhesive layer;
The haze of a film-like test piece having a thickness of 10 μm and made of the non-silicon-based resin (β1) is H(β),
In the case where the film-like adhesive contains the component (α2), when the haze of a film-like second test piece having a thickness of 10 μm and made of a mixture of 100 parts by mass of the non-silicon-based resin (β1) and 10 parts by mass of the component (α2) is H(βα), H(βα) and H(β) can be calculated by the following formula (X1):
(X1) H(βα)-H(β)>7%
Fulfilling
In the case where the pressure-sensitive adhesive layer contains the component (γ2), when the haze of a film-like third test piece having a thickness of 10 μm and made of a mixture of 100 parts by mass of the non-silicon-based resin (β1) and 10 parts by mass of the component (γ2) is H(βγ), H(βγ) and H(β) can be expressed by the following formula (X2):
(X2) H(βγ)-H(β)>7%
Fulfilling
The manufacturing method includes a step of forming a modified layer inside the semiconductor wafer by irradiating a laser beam so as to be focused at a focal point set inside the semiconductor wafer;
a step of grinding the back surface of the semiconductor wafer after the modified layer is formed, and dividing the semiconductor wafer at the portion where the modified layer is formed by utilizing a grinding force applied to the semiconductor wafer, thereby obtaining a group of semiconductor chips in a state where a plurality of the semiconductor chips are aligned;
a step of attaching the film-like adhesive therein to the backsides of all of the semiconductor chips in the group of semiconductor chips while heating the sheet for manufacturing semiconductor device;
a step of stretching the semiconductor device manufacturing sheet after being attached to the semiconductor chip in a direction parallel to the surface while cooling, thereby cutting the film-like adhesive along the outer periphery of the semiconductor chip, thereby obtaining a group of semiconductor chips with a film-like adhesive in a state where a plurality of the semiconductor chips with the film-like adhesive are aligned on the intermediate layer;
and a step of separating the semiconductor chip with the film-like adhesive from the intermediate layer and picking it up (sometimes referred to as "manufacturing method 2" in this specification).

Up to this point, the manufacturing method for semiconductor chips with film-like adhesive has been described using the semiconductor device manufacturing sheet 101 shown in Figure 1 as an example for both manufacturing method 1 and manufacturing method 2, but semiconductor chips with film-like adhesive can also be manufactured using other semiconductor device manufacturing sheets according to this embodiment. In that case, other processes may be added as necessary based on the differences in the configuration between this semiconductor device manufacturing sheet and semiconductor device manufacturing sheet 101 to manufacture semiconductor chips with film-like adhesive.

Not limited to the cases of manufacturing method 1 and manufacturing method 2, after obtaining the group of semiconductor chips with the film-like adhesive, before picking up the semiconductor chips with the film-like adhesive, the laminated sheet may be expanded in a direction parallel to the surface (first surface) of the pressure-sensitive adhesive layer facing the intermediate layer, and further, while maintaining this state, the peripheral portion of the laminated sheet on which the semiconductor chips with the film-like adhesive (group of semiconductor chips with the film-like adhesive) are not placed may be heated.
In this way, the distance between adjacent semiconductor chips, i.e., the kerf width, can be maintained sufficiently wide and highly uniform on the laminated sheet while the peripheral portion is shrunk, and the semiconductor chips with the film-like adhesive attached can be picked up more easily.

The present invention will be described in more detail below with reference to specific examples. However, the present invention is not limited to the examples shown below.

<<Raw materials for producing adhesive composition>>
The raw materials used in producing the adhesive composition are shown below.
[Polymer component (a)]
(a)-1: An acrylic resin (weight average molecular weight 800,000, glass transition temperature 9° C.) obtained by copolymerizing methyl acrylate (95 parts by mass) and 2-hydroxyethyl acrylate (5 parts by mass).
[Epoxy resin (b1)]
(b1)-1: Bisphenol A type epoxy resin that is liquid at 23°C ("jER828" manufactured by Mitsubishi Chemical Corporation, epoxy equivalent 184 to 194 g/eq, number average molecular weight 370, viscosity at 25°C 120 to 150 P (12 to 15 Pa s))
[Thermal curing agent (b2)]
(b2)-1: Aralkyl type phenol resin (Milex XLC-4L manufactured by Mitsui Chemicals, Inc., number average molecular weight 1100, softening point 63° C.)
[Filler (d)]
(d)-1: Spherical silica ("YA050C-MJE" manufactured by Admatechs Co., Ltd., average particle size 50 nm, methacrylsilane-treated product)
[Coupling agent (e)]
(e)-1: Silane coupling agent, 3-glycidoxypropylmethyldiethoxysilane ("KBE-402" manufactured by Shin-Etsu Silicones Co., Ltd.)
[Crosslinking agent (f)]
(f)-1: Tolylene diisocyanate crosslinking agent ("Coronate L" manufactured by Tosoh Corporation)

[Example 1]
<<Production of Sheets for Manufacturing Semiconductor Devices>>
<Production of substrate>
Low-density polyethylene (LDPE, "Sumikathene L705" manufactured by Sumitomo Chemical Co., Ltd.) was melted using an extruder, the melt was extruded by a T-die method, and the extrudate was biaxially stretched using a cooling roll to obtain a LDPE substrate (thickness 110 μm).

<Preparation of Adhesive Layer>
A non-energy ray curable pressure-sensitive adhesive composition was produced, which contained an acrylic resin (Olivine BPS 6367X manufactured by Toyochem Co., Ltd.) (100 parts by mass) as the pressure-sensitive adhesive resin (I-1a), a crosslinking agent (BXX 5640 manufactured by Toyochem Co., Ltd., a xylylene diisocyanate-based crosslinking agent) (1 part by mass), and an amine-based ionic liquid (IL-A2 manufactured by Koei Chemical Co., Ltd.) (3 parts by mass) that is liquid at 23°C as an antistatic agent.

Next, a release film made of polyethylene terephthalate, one side of which had been treated for release by silicone treatment, was used, and the adhesive composition obtained above was applied to the release-treated surface, followed by heating and drying at 100°C for 2 minutes to produce a non-energy ray-curable adhesive layer (thickness 10 μm).

<Preparation of intermediate layer>
At room temperature, 15 g of ethylene-vinyl acetate copolymer (EVA, weight average molecular weight 30,000, content of structural units derived from vinyl acetate 25% by mass) was dissolved in 85 g of tetrahydrofuran, and 1.5 g of a siloxane-based compound (polydimethylsiloxane, "BYK-333" manufactured by BYK Japan, number of structural units represented by the formula "-Si(-CH ₃ ) ₂ -O-" in one molecule is 45 to 230) was added to the resulting solution and stirred to prepare a composition for forming an intermediate layer.

A release film made of polyethylene terephthalate, one side of which had been treated with a silicone treatment for release, was used, and the intermediate layer forming composition obtained above was applied to the release-treated surface, followed by heating and drying at 70°C for 5 minutes to produce an intermediate layer (thickness 20 μm).

<Preparation of film adhesive>
A thermosetting adhesive composition was produced containing polymer component (a)-1 (100 parts by mass), epoxy resin (b1)-1 (10 parts by mass), thermosetting agent (b2)-1 (1.5 parts by mass), filler (d)-1 (75 parts by mass), coupling agent (e)-1 (0.5 parts by mass), and crosslinking agent (f)-1 (0.5 parts by mass). Note that all contents shown here are the contents of the target material excluding the solvent.

Next, a release film made of polyethylene terephthalate, one side of which had been treated for release by silicone treatment, was used, and the adhesive composition obtained above was applied to the release-treated surface, which was then heated and dried at 80°C for 2 minutes to produce a thermosetting film-like adhesive (thickness 7 μm).

<Production of Sheet for Manufacturing Semiconductor Device>
The exposed surface of the adhesive layer obtained above, opposite the side provided with the release film, was bonded to one surface of the substrate obtained above to produce a first intermediate laminate with a release film (in other words, a support sheet with a release film).
The exposed surface of the film-like adhesive obtained above, opposite the side having the release film, was bonded to the exposed surface of the intermediate layer obtained above, opposite the side having the release film, to produce a second intermediate laminate with a release film (a laminate of a release film, an intermediate layer, a film-like adhesive and a release film).

Next, this second intermediate laminate with release film was punched using a cutting blade from the release film on the intermediate layer side to the film-like adhesive to remove unnecessary portions, thereby producing a second intermediate laminate with release film, which is composed of a film-like adhesive (thickness 7 μm) with a circular planar shape (diameter 305 mm), an intermediate layer (thickness 20 μm), and a release film laminated in this order in the thickness direction on the release film on the film-like adhesive side.

Next, the release film was removed from the first intermediate laminate with the release film obtained above to expose one surface of the pressure-sensitive adhesive layer.
Furthermore, the circular release film was removed from the second intermediate laminate workpiece with the release film obtained above to expose one surface of the intermediate layer.
Next, the newly exposed surface of the pressure-sensitive adhesive layer in the first intermediate laminate was laminated to the newly exposed surface of the intermediate layer in the second intermediate laminate product. The substrate and pressure-sensitive adhesive layer (i.e., the support sheet) in the laminate thus obtained were punched from the substrate side using a cutting blade (diameter 370 mm) to remove unnecessary portions so that the planar shape of these (support sheets) was circular (diameter 370 mm) and concentric with the circular film-like adhesive and intermediate layer (diameter 305 mm).
As a result of the above, a sheet for manufacturing semiconductor device with a release film was obtained, which was composed of a substrate (thickness 110 μm), an adhesive layer (thickness 10 μm), an intermediate layer (thickness 20 μm), a film-like adhesive (thickness 7 μm) and a release film laminated in this order in the thickness direction.

<<Evaluation of sheets for manufacturing semiconductor device>>
<Measurement of H(β)>
A liquid material (first test composition) containing the ethylene-vinyl acetate copolymer was applied to the release-treated surface of a release film ("SP-PET381031" manufactured by Lintec Corporation) and dried to prepare a first test piece in the form of a film made of ethylene-vinyl acetate copolymer and having a thickness of 10 μm.
The haze (H(β)) (%) of the first test piece was measured from the exposed surface side using a haze meter ("NDH7000" manufactured by Nippon Denshoku Industries Co., Ltd.) in accordance with JIS K 7136: 2000. The results are shown in Table 1.

<Measurement of H(βα) and calculation of H(βα)-H(β)>
A liquid (second test composition) containing the ethylene-vinyl acetate copolymer and the epoxy resin (b1)-1 and uniformly mixed therewith was applied to the release-treated surface of a release film ("SP-PET381031" manufactured by Lintec Corporation) and dried to prepare a film-like second test piece having a thickness of 10 μm and consisting of a mixture of the ethylene-vinyl acetate copolymer (100 parts by mass) and the epoxy resin (b1)-1 (10 parts by mass).
For this second test piece, the haze (H(βα)) (%) was measured by the same method as in the case of the above-mentioned first test piece. Then, from the obtained measured value, H(βα)-H(β) (%) was calculated. The results are shown in Table 1.

<Measurement of H(βγ) and calculation of H(βγ)-H(β)>
A liquid (third test composition) containing the ethylene-vinyl acetate copolymer and the amine-based ionic liquid (IL-A2) and uniformly mixed therewith was applied to the release-treated surface of a release film ("SP-PET381031" manufactured by Lintec Corporation) and dried to prepare a third test piece in the form of a film having a thickness of 10 μm and consisting of a mixture of ethylene-vinyl acetate copolymer (100 parts by mass) and the amine-based ionic liquid (10 parts by mass).
For this third test piece, the haze (H(βγ)) (%) was measured by the same method as in the case of the above-mentioned first test piece. Then, from the obtained measured value, H(βγ)-H(β) (%) was calculated. The results are shown in Table 1.

<Measurement of pick-up force of silicon chip with film adhesive without aging>
[Production of silicon chips with film-like adhesive]
Using a dicing device (DISCO Corp.'s "DFD6361") and a dicing blade (DISCO Corp.'s "ZH05-SD2000-NI-90-BB"), a blade rotation speed of 50,000 rpm and a blade movement speed of 25 mm/sec were used to form a cut to a depth of 75 μm from one side of a silicon wafer (diameter 150 mm, thickness 350 μm), a so-called half cut. This half cut was performed so as to finally obtain a silicon chip measuring 5 mm x 5 mm.
Next, a backgrind tape ("AdwillE-3100TN" manufactured by Lintec Corporation) was applied to the half-cut surface of the silicon wafer. Then, using a backgrinding device ("DGP8761" manufactured by Disco Corporation), the exposed surface of the silicon wafer to which the backgrind tape was not applied was ground until the thickness of the silicon wafer was 30 μm, thereby dividing the silicon wafer and producing a large number of silicon chips (thickness 30 μm) measuring 5 mm×5 mm (such a size may be described as "5 mm□" in this specification). This resulted in a group of silicon chips in which a large number of silicon chips were aligned and fixed on the backgrind tape.

Next, the release film was removed from the unaged semiconductor device manufacturing sheet obtained above. Then, using a tape mounter ("Adwill RAD2700" manufactured by Lintec Corporation), this semiconductor device manufacturing sheet was heated to 60°C and attached to the exposed surfaces of all of the silicon chips in the silicon chip group using the film-like adhesive therein. Furthermore, the backgrind tape was then removed from all of the silicon chips. This resulted in a laminate (a laminate in which the laminate sheet, the film-like adhesive, and the silicon chip group were laminated in this order in the thickness direction) consisting of the substrate, the adhesive layer, the intermediate layer, the film-like adhesive, and the silicon chip group.

Next, the film-like adhesive was cut by expanding it using an expander (Disco Corporation, "DDS2300") in the following procedure. That is, first, the laminate was placed on a table. At this time, the base material in the laminate was brought into contact with the table. Next, the laminate was fixed to the table by adsorption, and the table was pushed up under conditions of 0°C, an expansion speed of 100 mm/s, and an expansion amount of 10 mm, thereby expanding the laminate in a direction parallel to its surface. In this way, the film-like adhesive was cut.
Next, the adsorption and expansion of the laminate was released, and the area near the outer periphery of the film-like adhesive in the laminate was heated to eliminate slack in the film-like adhesive in that area.
As a result of the above, a group of silicon chips with film-like adhesive was obtained, in which a large number of silicon chips with film-like adhesive, each of which had a silicon chip and a cut film-like adhesive applied to its back surface, were aligned and fixed on the intermediate layer in the laminated sheet by the film-like adhesive therein.

[Measurement of pick-up force of silicon chip with film-like adhesive without aging]
Next, a pick-up device ("PU100" manufactured by Fasford Technology, number of pins: 5) was used to pick up the silicon chips with the film-like adhesive from the group of silicon chips with the film-like adhesive obtained above under conditions of a push-up height of 250 μm and an expansion amount of 4 mm, and the pick-up force at that time was measured. The pick-up force was measured at 30 points, and the average value of these measured values was adopted as the pick-up force (mN/5 mm□) of the silicon chip with the film-like adhesive without aging. The results are shown in Table 1.

<Measurement of pick-up force of silicon chip with film adhesive over time>
The sheet for manufacturing a semiconductor device obtained above was left to stand in an environment of 40° C. for one week to allow it to age.
The pick-up force of the silicon chip with the film-like adhesive after aging was measured in the same manner as in the measurement of the pick-up force without aging, except that the aged sheet was used instead of the unaged sheet. The results are shown in Table 1.

<Measurement of surface resistivity of film adhesive without aging>
In the semiconductor device manufacturing sheet obtained above, the release film was removed, and the entire exposed surface of the film-like adhesive was attached to the adhesive surface of an adhesive tape having a polyethylene terephthalate layer ("PET50 (A) PL Thin 8LK" manufactured by Lintec Corporation). The obtained product was then cut into a size of 100 mm x 100 mm, and the laminate of the adhesive tape and the film-like adhesive was peeled off from the intermediate layer to obtain a test piece. The test piece was left to stand for 24 hours in an environment of a temperature of 23 ° C. and a relative humidity of 50%, and then the surface resistivity of the exposed surface of the film-like adhesive (the surface that was on the intermediate layer side) was measured. The surface resistivity was measured using a DIGITAL ELECTROMETER (manufactured by ADVANTEST Co., Ltd.) with an applied voltage of 100 V. The results are shown in Table 1.

<Measurement of surface resistivity of film adhesive over time>
The sheet for manufacturing a semiconductor device obtained above was left to stand in an environment of 40° C. for one week to allow it to age.
The aged surface resistivity of the film-like adhesive was measured in the same manner as in the measurement of the unaged surface resistivity, except that the aged sheet was used instead of the unaged sheet. The results are shown in Table 1.

<Calculation of silicon concentration on the surface of the intermediate layer facing the film-like adhesive>
In the manufacturing process of the above-mentioned semiconductor device manufacturing sheet, the exposed surface of the intermediate layer before being bonded to the adhesive layer was analyzed by XPS to measure the concentrations (atomic %) of carbon (C), oxygen (O), nitrogen (N) and silicon (Si). From the measured values, the ratio (%) of the silicon concentration to the total concentration of carbon, oxygen, nitrogen and silicon was calculated.
The XPS analysis was performed using an X-ray photoelectron spectrometer (ULVAC, Inc., "Quantra SXM") under conditions of an irradiation angle of 45°, an X-ray beam diameter of 20 μmφ, and an output of 4.5 W. The results are shown in the "Percentage of element concentration in intermediate layer (%)" column in Table 1, together with the percentages of concentrations of other elements.

<Evaluation of the effect of suppressing generation of cutting debris during blade dicing>
[Production of silicon chips with film-like adhesive]
The release film was removed from the sheet for manufacturing a semiconductor device obtained above.
A silicon wafer (diameter 300 mm, thickness 75 μm) whose back surface had been ground by dry polishing was used, and the above-mentioned sheet for manufacturing a semiconductor device was attached to the back surface (ground surface) of the wafer using a tape mounter ("Adwill RAD2500" manufactured by Lintec Corporation) with the film-like adhesive while heating to 60° C. This resulted in a laminate (a laminate formed by laminating the laminate sheet, the film-like adhesive, and the silicon wafer in this order in the thickness direction) constituted by the substrate, the adhesive layer, the intermediate layer, the film-like adhesive, and the silicon wafer.

Next, a region (the non-laminated region) near the peripheral portion where no intermediate layer was provided on the first surface of the pressure-sensitive adhesive layer in the laminate was fixed to a ring frame for wafer dicing.
Next, the silicon wafer was divided by dicing using a dicing device (DISCO Corporation's "DFD6361"), and the film-like adhesive was also cut to obtain silicon chips measuring 8 mm x 8 mm. The dicing was performed at a blade rotation speed of 30,000 rpm and a blade movement speed of 30 mm/sec, by cutting the semiconductor device manufacturing sheet from the surface of the film-like adhesive attached to the silicon wafer to the intermediate region of the intermediate layer (i.e., the entire region of the film-like adhesive in the thickness direction and the intermediate layer from the surface of the film-like adhesive side to the intermediate region). A DISCO Corporation's "Z05-SD2000-D1-90 CC" was used as the blade.
As a result of the above, a group of silicon chips with film-like adhesive was obtained, in which a large number of silicon chips with film-like adhesive, each of which had a silicon chip and a cut film-like adhesive applied to its back surface, were aligned and fixed on the intermediate layer in the laminated sheet by the film-like adhesive therein.

[Evaluation of the effect of suppressing generation of cutting debris]
Using a digital microscope (Keyence Corporation, "VH-Z100"), the group of silicon chips with film-like adhesive obtained above were observed from above the silicon chip side to check for the presence or absence of cutting debris. If no cutting debris was generated at all, it was judged as "A", and if even a small amount of cutting debris was generated, it was judged as "B". The results are shown in Table 1.

<Evaluation of cuttability of film adhesive during expansion>
[Production of silicon chips with film-like adhesive]
A silicon wafer having a circular planar shape, a diameter of 300 mm, and a thickness of 775 μm was used, and a backgrind tape ("Adwill E-3100TN" manufactured by Lintec Corporation) was attached to one surface of the wafer.
Next, a laser beam was irradiated using a laser beam irradiation device (DISCO Corporation, "DFL73161") so as to be focused on a focal point set inside the silicon wafer, thereby forming a modified layer inside the silicon wafer. At this time, the focal point was set so that a large number of silicon chips each having a size of 8 mm x 8 mm were obtained from the silicon wafer. The laser beam was irradiated from the other side (the side on which the backgrind tape was not attached) of the silicon wafer.
Next, the other surface of the silicon wafer was ground using a grinder to a thickness of 30 μm, and the grinding force applied to the silicon wafer at this time was used to divide the silicon wafer at the portion where the modified layer was formed, to produce a plurality of silicon chips. As a result, a group of silicon chips was obtained in which a plurality of silicon chips were aligned and fixed on the backgrind tape.

Next, using a tape mounter ("Adwill RAD2500" manufactured by Lintec Corporation), one of the semiconductor device manufacturing sheets obtained above was heated to 60°C, and the film-like adhesive therein was attached to the other surface (in other words, the ground surface) of all of the silicon chips (silicon chip group).
Next, the area (the non-laminated area) of the first surface of the adhesive layer in the semiconductor device manufacturing sheet after it had been attached to the group of silicon chips, near the periphery where no intermediate layer was provided, was fixed to a ring frame for wafer dicing.

Next, the backgrind tape was removed from the group of silicon chips in the fixed state. Then, using a fully automatic die separator (Disco's "DDS2300"), the sheet for manufacturing semiconductor device (film-like adhesive) was cooled in an environment of 0°C while expanding in a direction parallel to its surface, thereby cutting the film-like adhesive along the periphery of the silicon chip. At this time, the peripheral portion of the sheet for manufacturing semiconductor device was fixed, and the entire region where the intermediate layer and the film-like adhesive of the sheet for manufacturing semiconductor device were laminated was pushed up by a height of 15 mm from the substrate side, thereby expanding.
This resulted in a group of silicon chips with film-like adhesive, in which a plurality of silicon chips with film-like adhesive, each of which had a silicon chip and a cut film-like adhesive applied to the other surface (ground surface) of the silicon chip, were aligned and fixed on the intermediate layer.

Next, the above-mentioned semiconductor device manufacturing sheet was once released from expansion, and then the laminate (i.e., the laminate sheet) consisting of the base material, adhesive layer, and intermediate layer was expanded at room temperature in a direction parallel to the first surface of the adhesive layer. Furthermore, while maintaining this expanded state, the peripheral portion of the laminate sheet on which the silicon chip with film-like adhesive was not placed was heated. As a result, the kerf width between adjacent silicon chips on the laminate sheet was maintained at a certain value or more while the peripheral portion was contracted.

[Evaluation of cuttability of film adhesive]
During the manufacture of the silicon chip group with the film-like adhesive described above, a digital microscope (Keyence Corporation's "VH-Z100") was used to observe the silicon chip group with the film-like adhesive obtained above from above the silicon chip side. Then, among the multiple cut lines of the film-like adhesive extending in one direction that should be formed if the film-like adhesive is normally cut by expanding the semiconductor device manufacturing sheet (film-like adhesive), and the multiple cut lines of the film-like adhesive extending in a direction perpendicular to this direction, the number of cut lines that were not actually formed and the number of cut lines that were incompletely formed were confirmed, and the cuttability of the film-like adhesive was evaluated according to the following evaluation criteria. The results are shown in Table 1.
(Evaluation Criteria)
A: The total number of cut lines in the film-like adhesive that are not actually formed and cut lines in the film-like adhesive that are incompletely formed is 5 or less.
B: The total number of cut lines in the film-like adhesive that were not actually formed and cut lines in the film-like adhesive that were incompletely formed was 6 or more.

<Evaluation of pick-up ability of silicon chip with film-like adhesive after expansion>
After the evaluation of the cutting property of the film-like adhesive, the silicon chips with the film-like adhesive were picked up from the intermediate layer in the laminated sheet using a group of silicon chips with film-like adhesive and a die bonding device ("PU100" manufactured by Fasford Technology Co., Ltd.) under the conditions of a push-up height of 250 μm and a push-up speed of 5 mm/s. If all the silicon chips with the film-like adhesive could be picked up normally under the condition of a push-up time of 500 ms, it was evaluated as "A". If one or more silicon chips with the film-like adhesive could not be picked up normally under the condition of a push-up time of 500 ms, but all the silicon chips with the film-like adhesive could be picked up normally under the condition of a push-up time of 10 s, it was evaluated as "B". If one or more silicon chips with the film-like adhesive could not be picked up normally even under the condition of a push-up time of 10 s, it was evaluated as "C". The results are shown in Table 1.

<Measurement of T-peel strength between intermediate layer and film-like adhesive>
The release film was removed from the sheet for manufacturing a semiconductor device obtained above.
The entire exposed surface of the film-like adhesive in the semiconductor device manufacturing sheet thus produced was bonded to the adhesive surface of an adhesive tape having a polyethylene terephthalate layer ("PET50(A) PL Thin 8LK" manufactured by Lintec Corporation), and the resulting laminate was cut into a size of 50 mm x 100 mm to prepare a test specimen.
In accordance with JIS K6854-3, the laminate of the substrate, the pressure-sensitive adhesive layer and the intermediate layer (i.e., the laminate sheet) was peeled off from the laminate of the film-like adhesive and the pressure-sensitive adhesive tape, so that the test piece was peeled off in a T-shape, and the maximum peel force (mN/50 mm) measured at this time was used as the T-shape peel strength. At this time, the peel speed was 50 mm/min. The results are shown in Table 1.

<<Production and Evaluation of Sheets for Manufacturing Semiconductor Devices>>
[Example 2]
A sheet for manufacturing a semiconductor device was manufactured and evaluated in the same manner as in Example 1, except that, when preparing the composition for forming an intermediate layer, the siloxane compound was not added, and the amount of the ethylene-vinyl acetate copolymer used was changed from 15 g to 16.5 g (in other words, the siloxane compound was replaced with the same mass of the ethylene-vinyl acetate copolymer, and only the ethylene-vinyl acetate copolymer was dissolved in tetrahydrofuran). The results are shown in Table 1. In Table 1, a "-" in the column for an additive means that the additive was not used.

[Example 3]
A sheet for manufacturing a semiconductor device was manufactured and evaluated in the same manner as in Example 2, except that, in place of the ethylene-vinyl acetate copolymer, the same mass of ethylene-vinyl acetate copolymer (EVA, weight average molecular weight 30,000, content of structural units derived from vinyl acetate 40 mass%) was used in the preparation of the composition for forming an intermediate layer. The results are shown in Table 1.

[Comparative Example 1]
A comparative composition for forming an intermediate layer was prepared by mixing and stirring an acrylic resin (acrylic copolymer) dispersion ("Coponyl N2359-6" manufactured by Nippon Synthetic Chemical Industry Co., Ltd., solids concentration 34%) (100 parts by mass) and a polyvalent isocyanate compound ("Coronate L" manufactured by Nippon Polyurethane Industry Co., Ltd., solids concentration 75%) (10 parts by mass) at room temperature.
A comparative sheet for manufacturing a semiconductor device was produced and evaluated in the same manner as in Example 1, except that this comparative composition for forming an intermediate layer was used instead of the above-mentioned composition for forming an intermediate layer. The results are shown in Table 1.

[Comparative Example 2]
Except for not preparing the intermediate layer, a comparative semiconductor device manufacturing sheet was produced in the same manner as in Example 1. More specifically, in the manufacturing process of the semiconductor device manufacturing sheet described above in Example 1, the exposed surface of the film-like adhesive having a release film was bonded to the release-treated surface of the release film, not to the exposed surface of the intermediate layer having a release film, to produce a laminate of the release film, film-like adhesive, and release film, rather than the second intermediate laminate with the release film, and this was used in the subsequent steps. Except for this, a comparative semiconductor device manufacturing sheet was produced in the same manner as in Example 1.
This comparative sheet for manufacturing a semiconductor device was then evaluated in the same manner as in Example 1. The results are shown in Table 1.

As is clear from the above results, in Examples 1 to 3, no change was observed in the pick-up force of the silicon chip with the film-like adhesive whether the semiconductor device manufacturing sheet was aged or not, and no change was observed in the physical properties of the film-like adhesive even when the semiconductor device manufacturing sheet was aged. This indicated that no clear change occurred in the composition of the film-like adhesive even when the semiconductor device manufacturing sheet was aged. In other words, although the film-like adhesive contains epoxy resin (b1)-1 as component (α2) (crosslinking agent (f)-1 is not component (α2)), its migration to the adhesive layer side was suppressed even when the semiconductor device manufacturing sheet was aged.

Furthermore, in Examples 1 to 3, regardless of whether the semiconductor device manufacturing sheet had aged, the surface resistivity of the film-like adhesive was more than 1.0×10 ¹⁴ Ω/□, and even if the semiconductor device manufacturing sheet had aged, no change in antistatic properties was observed on the surface that was the intermediate layer side of the film-like adhesive. This indicated that even if the semiconductor device manufacturing sheet had aged, no clear change occurred in the composition of the adhesive layer, which is the only layer containing an antistatic agent. Here, the antistatic properties of the film-like adhesive were confirmed, but even if the antistatic properties of the adhesive layer were confirmed, it was presumed that the influence of the aging of the semiconductor device manufacturing sheet was not observed. That is, the adhesive layer contains the amine-based ionic liquid, which is an antistatic agent, as the component (γ2), but its migration to the film-like adhesive side was suppressed even if the semiconductor device manufacturing sheet had aged.

In this way, it was confirmed that in the semiconductor device manufacturing sheets of Examples 1 to 3, the intermediate layer suppresses the migration of liquid components in the film-like adhesive to the pressure-sensitive adhesive layer side, and suppresses the migration of liquid components in the pressure-sensitive adhesive layer to the film-like adhesive side.
In Examples 1 to 3, H(βα)−H(β) and H(βγ)−H(β) were both 8% or more.

Furthermore, the values of H(βα)-H(β) and H(βγ)-H(β) suggest that in the semiconductor device manufacturing sheets of Examples 1 and 2, the transfer of liquid components between the pressure-sensitive adhesive layer and the film-like adhesive is more strongly suppressed than in the semiconductor device manufacturing sheet of Example 3.
In the ethylene-vinyl acetate copolymer which is the main component (non-silicon-based resin (β1)) of the intermediate layer, the ratio of the mass of structural units derived from vinyl acetate to the total mass of all structural units was 25 mass% in Examples 1 and 2, and 40 mass% in Example 3.

Furthermore, in Examples 1 to 3, the generation of cutting debris was suppressed during blade dicing, and poor cutting of the film-like adhesive was suppressed during expanding, demonstrating excellent suitability for dividing semiconductor wafers.
In Examples 1 to 3, the weight average molecular weight of the ethylene-vinyl acetate copolymer contained as the main component (non-silicon-based resin (β1)) in the intermediate layer in the sheet for manufacturing semiconductor device was 30,000 or less.

In addition, in Examples 1 to 3, the content of the ethylene-vinyl acetate copolymer in the intermediate layer relative to the total mass of the intermediate layer was 90.9 mass% or more, and the content of the siloxane-based compound relative to the total mass of the intermediate layer was 9.1 mass% or less.

Furthermore, in Example 1, the pick-up properties of the silicon chip with the film-like adhesive after expansion were also excellent.
In Example 1, the T-peel strength between the intermediate layer and the film-like adhesive was 100 mN/50 mm, which was appropriately low, and the silicon concentration in the intermediate layer was 9%, which was appropriately high. These evaluation results were consistent with the evaluation results of the pick-up properties of the silicon chip with the film-like adhesive described above.
In Examples 2 and 3, the intermediate layer in the sheet for manufacturing semiconductor device did not contain the siloxane compound.

In addition, in Examples 1 to 3, no nitrogen was detected during XPS analysis of the exposed surface of the intermediate layer.

In contrast, in Comparative Example 1, the pick-up force of the silicon chip with the film-like adhesive decreased as the semiconductor device manufacturing sheet aged, and a change in the physical properties of the film-like adhesive was observed. This indicated that a clear change occurred in the composition of the film-like adhesive as the semiconductor device manufacturing sheet aged. In other words, it was presumed that although the film-like adhesive contained epoxy resin (b1)-1 as component (α2), its migration to the pressure-sensitive adhesive layer was not suppressed as the semiconductor device manufacturing sheet aged.

Furthermore, in Comparative Example 1, the surface resistivity of the film-like adhesive decreased with the aging of the semiconductor device manufacturing sheet, and a change in the antistatic property was observed on the surface of the film-like adhesive that was the intermediate layer side with the aging of the semiconductor device manufacturing sheet. This indicated that a clear change occurred in the composition of the adhesive layer, which is the only layer containing an antistatic agent, with the aging of the semiconductor device manufacturing sheet. Here, the antistatic property of the film-like adhesive was confirmed, but even when the antistatic property of the adhesive layer was confirmed, it was presumed that the influence of the aging of the semiconductor device manufacturing sheet was recognized. In other words, it was presumed that the adhesive layer contains the amine-based ionic liquid, which is an antistatic agent, as component (γ2), but its migration to the film-like adhesive side was not suppressed with the aging of the semiconductor device manufacturing sheet.

Thus, in the comparative semiconductor device manufacturing sheet of Comparative Example 1, the intermediate layer did not inhibit the migration of liquid components in the film-like adhesive to the pressure-sensitive adhesive layer side, nor did it inhibit the migration of liquid components in the pressure-sensitive adhesive layer to the film-like adhesive side.
In Comparative Example 1, both H(βα)−H(β) and H(βγ)−H(β) were 1%.

In Comparative Example 2, regardless of whether the semiconductor device manufacturing sheet had aged or not, the silicon chip with the film-like adhesive could not be picked up, and the pick-up force was not measurable. This indicated that a clear change had already occurred in the composition of the film-like adhesive before the semiconductor device manufacturing sheet had aged. That is, the film-like adhesive contained epoxy resin (b1)-1 as component (α2), but it was presumed that the migration of the epoxy resin to the pressure-sensitive adhesive layer had already occurred before the semiconductor device manufacturing sheet had aged. This was because the semiconductor device manufacturing sheet for comparison in Comparative Example 2 did not have an intermediate layer.
In Comparative Example 2, the pick-up properties of the silicon chip with the film-like adhesive after expansion were also poor.

In Comparative Example 2, not only could the silicon chip with the film-like adhesive not be separated from the intermediate layer and picked up, but the test piece for measuring the surface resistivity of the film-like adhesive could not be prepared either, and therefore the surface resistivity could not be measured.

The present invention can be used in the manufacture of semiconductor devices.

101: Sheet for manufacturing semiconductor device, 11: Base material, 12: Adhesive layer, 13: Intermediate layer, 13a: First surface of intermediate layer, 14: Film-like adhesive

Claims (8)

The adhesive tape includes a substrate, a pressure-sensitive adhesive layer, an intermediate layer, and a film-like adhesive,
the pressure-sensitive adhesive layer, the intermediate layer, and the film-like adhesive are laminated in this order on the base material,
the intermediate layer contains, as a main component, a non-silicon-based resin (β1) having a weight average molecular weight of 20,000 to 100,000;
Furthermore, at least the film-like adhesive contains a component (α2) or the pressure-sensitive adhesive layer contains a component (γ2),
the component (α2) is liquid at a temperature of 23° C. and does not have a functional group that reacts with the main component contained in the film-like adhesive,
the component (γ2) is liquid at a temperature of 23° C. and has no functional group that reacts with a main component contained in the pressure-sensitive adhesive layer;
The haze of the first test piece in the form of a film having a thickness of 10 μm and made of the non-silicon-based resin (β1) is H(β),
In the case where the film-like adhesive contains the component (α2), when the haze of a film-like second test piece having a thickness of 10 μm and made of a mixture of 100 parts by mass of the non-silicon-based resin (β1) and 10 parts by mass of the component (α2) is H(βα), H(βα) and H(β) can be calculated by the following formula (X1):
(X1) H(βα)-H(β)>7%
Fulfilling
In the case where the pressure-sensitive adhesive layer contains the component (γ2), when the haze of a film-like third test piece having a thickness of 10 μm and made of a mixture of 100 parts by mass of the non-silicon-based resin (β1) and 10 parts by mass of the component (γ2) is H(βγ), H(βγ) and H(β) can be expressed by the following formula (X2):
(X2) H(βγ)-H(β)>7%
A sheet for manufacturing semiconductor device that satisfies the above requirements. Furthermore, at least the film-like adhesive contains as a main component a component (α1) that is solid at a temperature of 23° C., or the pressure-sensitive adhesive layer contains as a main component a component (γ1) that is solid at a temperature of 23° C.,
2. The sheet for manufacturing a semiconductor device according to claim 1, wherein the component (α1) and the component (γ1) are acrylic resins having structural units derived from a (meth)acrylic acid ester. The sheet for manufacturing semiconductor device according to claim 1 or 2, wherein the intermediate layer contains, as the non-silicon-based resin (β1), one or more selected from the group consisting of ethylene-vinyl acetate copolymer and polyolefin. the intermediate layer contains an ethylene-vinyl acetate copolymer as the non-silicon-based resin (β1),
The ethylene-vinyl acetate copolymer has a ratio of the mass of the structural unit derived from vinyl acetate to the total mass of all structural units of 30 mass% or less. The sheet for manufacturing a semiconductor device according to any one of claims 1 to 3. A sheet for manufacturing semiconductor device according to any one of claims 1 to 4, wherein the sheet for manufacturing semiconductor device is for cutting the film-like adhesive by cooling and expanding the film-like adhesive. A method for producing the sheet for producing semiconductor device according to any one of claims 1 to 5,
The manufacturing method is a method for manufacturing a sheet for manufacturing a semiconductor device, which includes either or both of a film-like adhesive preparation step of preparing the film-like adhesive containing the component (α2) and a pressure-sensitive adhesive layer preparation step of preparing the pressure-sensitive adhesive layer containing the component (γ2). A method for producing a semiconductor chip with a film-like adhesive using the sheet for producing a semiconductor device according to any one of claims 1 to 5,
The semiconductor chip with a film-like adhesive includes a semiconductor chip and a film-like adhesive provided on a back surface of the semiconductor chip,
The manufacturing method includes a step of attaching the film-like adhesive in the sheet for manufacturing a semiconductor device to a back surface of a semiconductor wafer while heating the sheet for manufacturing a semiconductor device;
a step of cutting the semiconductor wafer to which the film-like adhesive has been applied from the circuit formation surface side across the entire thickness direction to divide the semiconductor chips, and cutting the semiconductor device manufacturing sheet in the thickness direction from the film-like adhesive side to an area halfway through the intermediate layer to cut the film-like adhesive, but not cutting into the pressure-sensitive adhesive layer, thereby obtaining a group of semiconductor chips with a film-like adhesive in which a plurality of the semiconductor chips with the film-like adhesive are aligned on the intermediate layer;
and a step of separating the semiconductor chip with the film-like adhesive from the intermediate layer and picking it up. A method for producing a semiconductor chip with a film-like adhesive using the sheet for producing a semiconductor device according to any one of claims 1 to 5,
The semiconductor chip with a film-like adhesive includes a semiconductor chip and a film-like adhesive provided on a back surface of the semiconductor chip,
The manufacturing method includes a step of forming a modified layer inside the semiconductor wafer by irradiating a laser beam so as to be focused at a focal point set inside the semiconductor wafer;
a step of grinding the back surface of the semiconductor wafer after the modified layer is formed, and dividing the semiconductor wafer at the portion where the modified layer is formed by utilizing a grinding force applied to the semiconductor wafer, thereby obtaining a group of semiconductor chips in a state where a plurality of the semiconductor chips are aligned;
a step of attaching the film-like adhesive therein to the backsides of all of the semiconductor chips in the group of semiconductor chips while heating the sheet for manufacturing semiconductor device;
a step of stretching the semiconductor device manufacturing sheet after being attached to the semiconductor chip in a direction parallel to the surface while cooling, thereby cutting the film-like adhesive along the outer periphery of the semiconductor chip, thereby obtaining a group of semiconductor chips with a film-like adhesive in a state where a plurality of the semiconductor chips with the film-like adhesive are aligned on the intermediate layer;
and a step of separating the semiconductor chip with the film-like adhesive from the intermediate layer and picking it up.

Images