JP7672970B2 - Laminate for semiconductor processing, adhesive tape for semiconductor processing, and method for manufacturing semiconductor device - Google Patents

Description

The present invention relates to a laminate for semiconductor processing, which can be easily peeled off when picking up a semiconductor package without losing adhesion during dicing, and an adhesive tape for semiconductor processing. The present invention also relates to a method for manufacturing a semiconductor device using the adhesive tape for semiconductor processing.

During processing of electronic components such as semiconductors, in order to facilitate handling of the electronic components and prevent them from being damaged, the electronic components are protected by being fixed to a support plate via a pressure-sensitive adhesive composition or by being attached with a pressure-sensitive adhesive tape. For example, when a thick-film wafer cut from a high-purity silicon single crystal or the like is ground to a predetermined thickness to obtain a thin-film wafer, the thick-film wafer is adhered to a support plate via a pressure-sensitive adhesive composition.

Adhesive tape is also applied to a semiconductor package when a large-area semiconductor package is diced to obtain a large number of individual semiconductor packages. In such a process, the semiconductor package to which the adhesive tape is applied is temporarily fixed on a tape called a dicing tape, and the semiconductor package is diced together with the adhesive tape on the dicing tape. After dicing, the individual semiconductor packages are peeled off from the dicing tape and/or the adhesive tape by needle pick-up or the like.

Thus, pressure-sensitive adhesive compositions and pressure-sensitive adhesive tapes used for electronic components are required to have high enough adhesion to firmly fix the electronic components during processing, and also to be able to be peeled off without damaging the electronic components after the processing is completed (hereinafter, also referred to as "high adhesion and easy peeling").
As a means for realizing high adhesion and easy peeling, for example, Patent Document 1 discloses an adhesive sheet using an adhesive in which a polyfunctional monomer or oligomer having a radiation polymerizable functional group is bonded to the side chain or main chain of the polymer. By utilizing the fact that the polymer has a radiation polymerizable functional group and is cured by exposure to ultraviolet light, the adhesive strength is reduced by exposure to ultraviolet light during peeling, allowing peeling without leaving any adhesive residue.

Japanese Patent Application Publication No. 5-32946

On the other hand, communication devices such as mobile phones are becoming increasingly high-frequency, which has led to problems with noise from high frequencies causing malfunctions of semiconductor packages. In particular, communication devices in recent years have become smaller, leading to increased device density and lower device voltages, making semiconductor packages more susceptible to the effects of high-frequency noise.
To address this problem, for example, a shielding process is performed on the back and sides of the individual semiconductor packages after dicing, covering them with a metal film by sputtering or the like to block high frequencies. Even in such a shielding process, an adhesive tape is attached to the circuit surface (front surface) of the semiconductor package to protect the circuit surface (front surface) and prevent contamination. That is, the semiconductor package with the adhesive tape attached to the circuit surface (front surface) is further temporarily fixed on a temporary fixing tape, and a metal film is formed on the back and sides of the semiconductor package on the temporary fixing tape.

At present, there has been no sufficient consideration given to performing the series of processes from dicing the semiconductor package to shielding the resulting individual semiconductor packages while keeping the adhesive tape attached to the circuit surface (front surface) of the semiconductor package.
The present invention aims to provide a laminate for semiconductor processing, which does not lose adhesion during dicing and can be easily peeled off when picking up a semiconductor package, and an adhesive tape for semiconductor processing, and a method for manufacturing a semiconductor device using the adhesive tape for semiconductor processing.

The present invention is a semiconductor processing laminate having a temporary fixing tape and an adhesive tape for semiconductor processing laminated on the temporary fixing tape, the temporary fixing tape having at least an adhesive layer, the adhesive tape for semiconductor processing having a base material and an adhesive layer laminated on one surface of the base material, the base material of the adhesive tape for semiconductor processing being laminated on the temporary fixing tape so as to be in contact with the adhesive layer of the temporary fixing tape, and the adhesive tape for semiconductor processing and the temporary fixing tape satisfy the following formula (1):
2.0×10 ^-3 ≦(Fa/Fb)≦6.0×10 ^-2 (1)
In formula (1), Fa represents the peel force in the 180° direction after the adhesive tape for semiconductor processing is applied to a copper plate and heated at 150°C for 1 hour, and Fb represents the peel force in the 180° direction after the temporary fixing tape is applied to the substrate surface of the adhesive tape for semiconductor processing and heated at 150°C for 1 hour.

The present invention also provides an adhesive tape for semiconductor processing having a substrate and an adhesive layer laminated on one surface of the substrate, the adhesive tape satisfying the following formula (2):
2.0×10 ^-3 ≦(Fa/Fb')≦6.0×10 ^-2 (2)
In formula (2), Fa represents the peel force in the 180° direction after the adhesive tape for semiconductor processing is attached to a copper plate and heated at 150°C for 1 hour, and Fb' represents the peel force in the 180° direction after a temporary fixing tape having an adhesive strength to a SUS plate of 7.5 N/25 mm is attached to the base surface of the adhesive tape for semiconductor processing and heated at 150°C for 1 hour.
The present invention will be described in detail below.

The present inventors have been studying a series of steps from dicing a semiconductor package to subjecting the resulting individual semiconductor packages to shielding treatment while the adhesive tape is attached to the circuit surface (front surface) of the semiconductor package. Such an adhesive tape is required to exhibit high adhesion to the semiconductor package during dicing and shielding treatment, while being easily peeled off from the semiconductor package when the semiconductor package is picked up. In particular, if the adhesiveness during dicing is insufficient, the dicing cleaning water will penetrate into the interface between the semiconductor package and the adhesive tape, leading to peeling of the adhesive tape. On the other hand, if the peelability during picking up is insufficient, peeling will occur not at the interface between the semiconductor package and the adhesive tape, but at the interface between the temporary fixing tape and the adhesive tape, resulting in pick-up failure.
The present inventors have studied a laminate having a temporary fixing tape and an adhesive tape laminated on the temporary fixing tape, the temporary fixing tape having at least an adhesive layer, the adhesive tape having a base material and an adhesive layer, and the base material of the adhesive tape is laminated on the temporary fixing tape so as to be in contact with the adhesive layer of the temporary fixing tape. The present inventors have focused on the "adhesive strength of the adhesive tape to the adherend (a standard copper plate)" and the "adhesive strength of the temporary fixing tape to the adhesive tape base surface" in such a laminate, and have found that by adjusting the ratio between these to a specific range, an adhesive tape having improved adhesion during dicing and peelability during pick-up can be obtained. This has led to the completion of the present invention.

First, the laminate for semiconductor processing of the present invention will be described.
The semiconductor processing laminate of the present invention comprises a temporary fixing tape and an adhesive tape for semiconductor processing laminated on the temporary fixing tape.

The temporary fixing tape is not particularly limited, and any adhesive tape for temporary fixing that is usually used in the manufacturing method of a semiconductor device, particularly in dicing or shielding processing, can be used.
The adhesive strength of the temporary fixing tape to the SUS plate is preferably 6.0 N/25 mm at the lower limit and 9.0 N/25 mm at the upper limit. By the adhesive strength of the temporary fixing tape to the SUS plate being within the above range, it becomes easy to adjust Fa/Fb to a specific range as described later, and both the adhesiveness during dicing and the peelability during pick-up are improved. The adhesive strength of the temporary fixing tape to the SUS plate is more preferably 7.0 N/25 mm at the lower limit and 8.0 N/25 mm at the upper limit.
The adhesive strength of the temporary fixing tape to the SUS plate can be measured by, for example, the following method. First, the temporary fixing tape is placed on the SUS plate. The temporary fixing tape is laminated to the SUS plate by rolling a 2 kg rubber roller back and forth on the temporary fixing tape at a speed of 300 mm/min. Then, the test sample is left to stand at 23°C for 1 hour to prepare a test sample. After standing, the test sample is peeled off in the 180° direction at a pulling speed of 300 mm/min in an environment of 23°C and 50% relative humidity using an autograph (manufactured by Shimadzu Corporation) in accordance with JIS Z0237:2009, to measure the peel strength.

The temporary fixing tape has at least a pressure-sensitive adhesive layer. In particular, the temporary fixing tape preferably has a base material and a silicone pressure-sensitive adhesive layer laminated on one surface of the base material. By having the silicone pressure-sensitive adhesive layer, the heat resistance of the temporary fixing tape is improved.
The silicone compound constituting the silicone pressure-sensitive adhesive layer is not particularly limited, and examples thereof include addition-curable silicones and peroxide-curable silicones.

The thickness of the pressure-sensitive adhesive layer of the temporary fixing tape is not particularly limited, but the preferred lower limit is 5 μm, and the preferred upper limit is 500 μm. By the thickness of the pressure-sensitive adhesive layer being within the above range, it can be attached to the adherend with sufficient adhesive strength, and the adherend can be sufficiently fixed. From the viewpoint of improving adhesive strength, the more preferred lower limit of the thickness of the pressure-sensitive adhesive layer is 10 μm, the more preferred upper limit is 300 μm, the even more preferred lower limit is 15 μm, the even more preferred upper limit is 250 μm, and the even more preferred upper limit is 200 μm.

The material of the base material of the temporary fixing tape is not particularly limited, but is preferably a heat-resistant material.
Examples of the material of the base material of the temporary fixing tape include polyethylene terephthalate, polyethylene naphthalate, polyacetal, polyamide, polycarbonate, polyphenylene ether, polybutylene terephthalate, ultra-high molecular weight polyethylene, syndiotactic polystyrene, polyarylate, polysulfone, polyethersulfone, polyphenylene sulfide, polyetheretherketone, polyimide, polyetherimide, fluororesin, liquid crystal polymer, etc. Among these, polyimide, polyamide, polyethylene terephthalate, and polyethylene naphthalate are preferred because of their excellent heat resistance.

The thickness of the base material of the temporary fixing tape is not particularly limited, but the preferred lower limit is 5 μm, and the preferred upper limit is 200 μm. By having the thickness of the base material of the temporary fixing tape within the above range, the temporary fixing tape can have a suitable stiffness and excellent handling properties. The more preferred lower limit of the thickness of the base material of the temporary fixing tape is 10 μm, and the more preferred upper limit is 150 μm.

The commercially available temporary fixing tape is not particularly limited, and examples thereof include Kapton (registered trademark) adhesive tape 650R#50 and 650S#50 (both manufactured by Teraoka Corporation).

The adhesive tape for semiconductor processing has a base material and an adhesive layer laminated on one side of the base material, and is laminated on the temporary fixing tape so that the base material of the adhesive tape for semiconductor processing is in contact with the adhesive layer of the temporary fixing tape.
In addition, when the substrate of the adhesive tape for semiconductor processing contacts the adhesive layer of the temporary fixing tape, this means that the surface of the substrate of the adhesive tape for semiconductor processing opposite the adhesive layer (the surface on the side on which the adhesive layer is not laminated) contacts the adhesive layer of the temporary fixing tape.

The material of the substrate of the pressure-sensitive adhesive tape for semiconductor processing is not particularly limited, but is preferably a heat-resistant material.
Examples of materials for the substrate of the pressure-sensitive adhesive tape for semiconductor processing include polyethylene terephthalate, polyethylene naphthalate, polyacetal, polyamide, polycarbonate, polyphenylene ether, polybutylene terephthalate, ultra-high molecular weight polyethylene, syndiotactic polystyrene, polyarylate, polysulfone, polyethersulfone, polyphenylene sulfide, polyetheretherketone, polyimide, polyetherimide, fluororesin, liquid crystal polymer, etc. Among these, polyethylene terephthalate and polyethylene naphthalate are preferred because of their excellent heat resistance.

The substrate of the pressure-sensitive adhesive tape for semiconductor processing preferably has an easy-adhesion layer on the surface opposite to the pressure-sensitive adhesive layer.
The adhesive layer is formed on the surface of the substrate of the semiconductor processing adhesive tape opposite to the adhesive layer, i.e., on the back surface. By the substrate of the semiconductor processing adhesive tape having the adhesive layer, it becomes easy to adjust Fa/Fb to a specific range as described later, and both the adhesion during dicing and the peelability during picking up are improved.

Examples of the easy-adhesion layer include a SiOx layer, a metal oxide layer, an organometallic compound layer, a silicone compound layer, a polymerizable polymer layer, a corona-treated layer, a plasma-treated layer, etc. Among these, a SiOx layer, a metal oxide layer, an organometallic compound layer, a silicone compound layer, or a polymerizable polymer layer is preferred because of its excellent adhesion to the pressure-sensitive adhesive layer of the temporary fixing tape, particularly to the silicone pressure-sensitive adhesive layer.

The method for forming the SiOx layer is not particularly limited, and examples thereof include a method of depositing silica on the rear surface of the substrate, a method of sputtering silica on the rear surface of the substrate, and a method of applying silica to the rear surface of the substrate.

The metal oxide contained in the metal oxide layer is not particularly limited, and examples thereof include aluminum oxide, antimony-doped tin oxide (ATO), copper oxide, tin-doped indium oxide (ITO), etc. Among these, aluminum oxide and antimony-doped tin oxide (ATO) are preferable.
The method for forming the metal oxide layer is not particularly limited, and examples thereof include a method for vapor-depositing the metal oxide onto the back surface of the substrate, a method for sputtering the metal oxide onto the back surface of the substrate, and a method for applying a coating agent containing the metal oxide onto the back surface of the substrate.

The organometallic compound contained in the organometallic compound layer is not particularly limited, and examples thereof include organotitanium compounds, organozirconium compounds, organoaluminum compounds, etc. Among these, organotitanium compounds are preferred.
The method for forming the organometallic compound layer is not particularly limited, and examples thereof include a method in which a coating agent such as a titanium oligomer-based coating agent is applied to the back surface of the substrate.

The silicone compound contained in the silicone compound layer is not particularly limited, and examples thereof include polysiloxane.
The method for forming the silicone compound layer is not particularly limited, and examples thereof include a method in which a coating agent such as a polysiloxane-based coating agent is applied to the back surface of the substrate.

The polymerizable polymer contained in the polymerizable polymer layer is not particularly limited, and examples thereof include acrylic polymers, polyester polymers, urethane polymers, etc. Among these, acrylic polymers are preferred.
The method for forming the polymerizable polymer layer is not particularly limited, and examples thereof include a method in which a coating agent such as an acrylic polymer-based coating agent is applied to the back surface of the substrate.

Examples of a method for forming the corona treatment layer include a method in which a film is reciprocated once using a high-frequency power supply device (AGI-020 manufactured by Kasuga Electric Co., Ltd.) under conditions of an output of 0.24 kW, a speed of 40 mm/min, and an electrode distance of 1 mm to perform corona treatment on the back surface of the substrate.

The thickness of the easy-adhesion layer is not particularly limited, but the preferred lower limit is 1 nm, and the preferred upper limit is 10 μm. By having the thickness of the easy-adhesion layer within the above range, it becomes easier to adjust Fa/Fb to a specific range as described below. The more preferred lower limit of the thickness of the easy-adhesion layer is 5 nm, and the more preferred upper limit is 5 μm.

The thickness of the substrate of the semiconductor processing adhesive tape is not particularly limited, but the preferred lower limit is 5 μm, and the preferred upper limit is 200 μm. By having the thickness of the substrate of the semiconductor processing adhesive tape within the above range, the semiconductor processing adhesive tape can have a moderate stiffness and excellent handling properties. The more preferred lower limit of the thickness of the substrate of the semiconductor processing adhesive tape is 10 μm, and the more preferred upper limit is 150 μm.

The adhesive constituting the adhesive layer of the semiconductor processing adhesive tape is not particularly limited, and may be either a non-curing adhesive or a curing adhesive.Specific examples include rubber-based adhesives, acrylic-based adhesives, vinyl alkyl ether-based adhesives, silicone-based adhesives, polyester-based adhesives, polyamide-based adhesives, urethane-based adhesives, and styrene-diene block copolymer-based adhesives.Among them, acrylic-based adhesives are preferred because they have excellent heat resistance and are easy to adjust the adhesive strength, and acrylic curing adhesives are more preferred.

Examples of the curable adhesive include photocurable adhesives that crosslink and cure by irradiation with light, and thermosetting adhesives that crosslink and cure by heating. Among these, photocurable adhesives are preferred because they are less likely to damage the adherend and can be easily cured. That is, the adhesive layer of the adhesive tape for semiconductor processing is preferably a photocurable adhesive layer.
The photocurable adhesive may be, for example, an adhesive containing a polymerizable polymer as a main component and a photopolymerization initiator. The thermocurable adhesive may be, for example, an adhesive containing a polymerizable polymer as a main component and a thermal polymerization initiator.

The polymerizable polymer can be obtained, for example, by previously synthesizing a (meth)acrylic polymer having a functional group in the molecule (hereinafter referred to as a functional group-containing (meth)acrylic polymer), and reacting it with a compound having a functional group reactive with the functional group and a radically polymerizable unsaturated bond in the molecule (hereinafter referred to as a functional group-containing unsaturated compound).

The functional group-containing (meth)acrylic polymer can be obtained, for example, by copolymerizing an acrylic acid alkyl ester and/or a methacrylic acid alkyl ester in which the alkyl group has 2 to 18 carbon atoms, a functional group-containing monomer, and, if necessary, another modifying monomer copolymerizable therewith.

The weight average molecular weight of the functional group-containing (meth)acrylic polymer is not particularly limited, but is usually about 200,000 to 2,000,000.
The weight average molecular weight can be determined using gel permeation chromatography. More specifically, for example, the obtained polymer is adjusted to 0.2 wt % with tetrahydrofuran (THF) and the resulting diluted solution is filtered through a filter (material: polytetrafluoroethylene, pore diameter: 0.2 μm). The obtained filtrate is supplied to a gel permeation chromatograph (Waters, 2690 Separations Model, or equivalent), and GPC measurement is performed under conditions of a sample flow rate of 1 mL/min and a column temperature of 40° C., and the polystyrene-equivalent molecular weight is measured to determine the weight average molecular weight (Mw). A GPC KF-806L (Showa Denko, or equivalent) is used as the column, and a differential refractometer is used as the detector.

Examples of the functional group-containing monomer include carboxyl group-containing monomers such as acrylic acid and methacrylic acid, hydroxyl group-containing monomers such as hydroxyethyl acrylate and hydroxyethyl methacrylate, and epoxy group-containing monomers such as glycidyl acrylate and glycidyl methacrylate. Examples of the functional group-containing monomer include isocyanate group-containing monomers such as isocyanate ethyl acrylate and isocyanate ethyl methacrylate, and amino group-containing monomers such as aminoethyl acrylate and aminoethyl methacrylate.

Examples of the other copolymerizable modifying monomer include various monomers used in general (meth)acrylic polymers, such as vinyl acetate, acrylonitrile, and styrene.

The functional group-containing (meth)acrylic polymer can be obtained by radically reacting raw material monomers in the presence of a polymerization initiator. As a method for radically reacting the raw material monomers, i.e., a polymerization method, a conventionally known method can be used, such as solution polymerization (boiling point polymerization or constant temperature polymerization), emulsion polymerization, suspension polymerization, bulk polymerization, etc.
The polymerization initiator used in the radical reaction for obtaining the functional group-containing (meth)acrylic polymer is not particularly limited, and examples thereof include organic peroxides and azo compounds. Examples of the organic peroxides include 1,1-bis(t-hexylperoxy)-3,3,5-trimethylcyclohexane, t-hexylperoxypivalate, t-butylperoxypivalate, 2,5-dimethyl-2,5-bis(2-ethylhexanoylperoxy)hexane, t-hexylperoxy-2-ethylhexanoate, t-butylperoxy-2-ethylhexanoate, t-butylperoxyisobutyrate, t-butylperoxy-3,5,5-trimethylhexanoate, and t-butylperoxylaurate. Examples of the azo compounds include azobisisobutyronitrile and azobiscyclohexanecarbonitrile. These polymerization initiators may be used alone or in combination of two or more.

As the functional group-containing unsaturated compound to be reacted with the functional group-containing (meth)acrylic polymer, the same as the functional group-containing monomer described above can be used according to the functional group of the functional group-containing (meth)acrylic polymer. For example, when the functional group of the functional group-containing (meth)acrylic polymer is a carboxyl group, an epoxy group-containing monomer or an isocyanate group-containing monomer is used. When the functional group of the functional group-containing (meth)acrylic polymer is a hydroxyl group, an isocyanate group-containing monomer is used. When the functional group of the functional group-containing (meth)acrylic polymer is an epoxy group, a carboxyl group-containing monomer or an amide group-containing monomer such as acrylamide is used. When the functional group of the functional group-containing (meth)acrylic polymer is an amino group, an epoxy group-containing monomer is used.

The photocurable adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include those that are activated by irradiation with light having a wavelength of 250 to 800 nm. Examples of such photopolymerization initiators include acetophenone derivative compounds such as methoxyacetophenone, benzoin ether compounds such as benzoin propyl ether and benzoin isobutyl ether, ketal derivative compounds such as benzyl dimethyl ketal and acetophenone diethyl ketal, and phosphine oxide derivative compounds. Other examples include bis(η5-cyclopentadienyl)titanocene derivative compounds, benzophenone, Michler's ketone, chlorothioxanthone, todecylthioxanthone, dimethylthioxanthone, diethylthioxanthone, α-hydroxycyclohexylphenyl ketone, and 2-hydroxymethylphenylpropane. These photopolymerization initiators may be used alone or in combination of two or more.

The thermosetting adhesive preferably contains a thermal polymerization initiator. Examples of the thermal polymerization initiator include those that decompose by heat to generate active radicals that initiate polymerization curing. Specific examples include dicumyl peroxide, di-t-butyl peroxide, t-butyl peroxybenzoyl, t-butyl hydroperoxide, benzoyl peroxide, cumene hydroperoxide, diisopropylbenzene hydroperoxide, paramenthane hydroperoxide, and di-t-butyl peroxide.
The commercially available thermal polymerization initiator is not particularly limited, but examples thereof include Perbutyl D, Perbutyl H, Perbutyl P, Perpenta H (all manufactured by NOF Corp.), etc. These thermal polymerization initiators may be used alone or in combination of two or more kinds.

The pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape for semiconductor processing may further contain a radically polymerizable polyfunctional oligomer or monomer. By containing the radically polymerizable polyfunctional oligomer or monomer, the photocurability and heat curability of the pressure-sensitive adhesive layer are improved.
The polyfunctional oligomer or monomer is not particularly limited, but preferably has a weight average molecular weight of 10,000 or less. In order to efficiently form a three-dimensional reticulation in the pressure-sensitive adhesive layer by light irradiation or heating, the polyfunctional oligomer or monomer preferably has a weight average molecular weight of 5,000 or less and has 2 to 20 radically polymerizable unsaturated bonds in the molecule.

Examples of the polyfunctional oligomer or monomer include trimethylolpropane triacrylate, tetramethylolmethane tetraacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, dipentaerythritol monohydroxypentaacrylate, dipentaerythritol hexaacrylate, and methacrylates thereof. Examples of the polyfunctional oligomer or monomer include 1,4-butylene glycol diacrylate, 1,6-hexanediol diacrylate, polyethylene glycol diacrylate, commercially available oligoester acrylates, and methacrylates thereof. These polyfunctional oligomers or monomers may be used alone or in combination of two or more.

The pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape for semiconductor processing may further contain an inorganic filler such as fumed silica. By containing an inorganic filler, the cohesive strength of the pressure-sensitive adhesive layer is increased, and both the adhesiveness during dicing and the releasability during pick-up are improved.

The pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape for semiconductor processing preferably contains a crosslinking agent, which increases the cohesive strength of the pressure-sensitive adhesive layer and improves both the adhesion during dicing and the peelability during pick-up.
The crosslinking agent is not particularly limited, and examples thereof include isocyanate-based crosslinking agents, epoxy-based crosslinking agents, aziridine-based crosslinking agents, metal chelate-based crosslinking agents, etc. Among these, isocyanate-based crosslinking agents are preferred because they provide higher adhesive strength.

The content of the crosslinking agent is preferably 0.01 parts by weight or more and 20 parts by weight or less relative to 100 parts by weight of the adhesive constituting the adhesive layer. By the content of the crosslinking agent being within the above range, the adhesive can be appropriately crosslinked to increase the adhesive strength. From the viewpoint of further increasing the adhesive strength, the more preferred lower limit of the content of the crosslinking agent is 0.05 parts by weight, the more preferred upper limit is 15 parts by weight, the even more preferred lower limit is 0.1 parts by weight, and the even more preferred upper limit is 10 parts by weight.

The pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape for semiconductor processing may contain known additives such as plasticizers, resins, surfactants, waxes, particulate fillers, etc. These additives may be used alone or in combination of two or more kinds.

The pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape for semiconductor processing preferably has a gel fraction of 20% by weight or more and 80% by weight or less. By having the gel fraction within the above range, the tape can be attached to an adherend with sufficient adhesive strength, and the adherend can be sufficiently fixed. From the viewpoint of improving the adhesive strength, the gel fraction of the pressure-sensitive adhesive layer is more preferably 30% by weight or more, and even more preferably 70% by weight or less.
When the pressure-sensitive adhesive is a curable pressure-sensitive adhesive, the gel fraction refers to that before curing.

The thickness of the adhesive layer of the semiconductor processing adhesive tape is not particularly limited, but the preferred lower limit is 5 μm, and the preferred upper limit is 500 μm. By having the thickness of the adhesive layer within the above range, it can be attached to the adherend with sufficient adhesive strength, and the adherend can be sufficiently fixed. From the viewpoint of improving the adhesive strength, the more preferred lower limit of the thickness of the adhesive layer is 10 μm, the more preferred upper limit is 300 μm, the even more preferred lower limit is 15 μm, the even more preferred upper limit is 250 μm, and the even more preferred upper limit is 200 μm.

In the semiconductor processing laminate of the present invention, the pressure-sensitive adhesive tape for semiconductor processing and the temporary fixing tape satisfy the following formula (1).
2.0×10 ^-3 ≦(Fa/Fb)≦6.0×10 ^-2 (1)
In formula (1), Fa represents the peel force in the 180° direction after the adhesive tape for semiconductor processing is applied to a copper plate and heated at 150°C for 1 hour, and Fb represents the peel force in the 180° direction after the temporary fixing tape is applied to the substrate surface of the adhesive tape for semiconductor processing and heated at 150°C for 1 hour.

The Fa is an index representing the "adhesive strength of the adhesive tape for semiconductor processing to an adherend (a standard copper plate)", and the Fb is an index representing the "adhesive strength of the temporary fixing tape to the substrate surface of the adhesive tape for semiconductor processing". When the Fa/Fb is within the above range, the semiconductor processing laminate of the present invention can be easily peeled off when picking up the semiconductor package without impairing the adhesiveness during dicing. Here, the substrate surface of the adhesive tape for semiconductor processing means the side of the substrate surface of the adhesive tape for semiconductor processing on which the adhesive layer is not laminated.
The copper plate as the adherend of the adhesive tape for semiconductor processing means a copper plate (e.g., C1100P, manufactured by Engineering Test Services) that satisfies JIS H3100:2018 and is selected with the circuit surface of a semiconductor package in mind. In addition, "heating at 150°C for 1 hour" is set with the temperature and time applied to the semiconductor processing laminate of the present invention when performing shielding treatment of a semiconductor package in mind.

If the Fa/Fb is less than 2.0×10 ⁻³ , it means that the Fa is too small or the Fb is too large. As a result, for example, the adhesiveness of the semiconductor processing adhesive tape during dicing becomes insufficient, and dicing cleaning water penetrates into the interface between the semiconductor package and the semiconductor processing adhesive tape, leading to peeling of the semiconductor processing adhesive tape. If the Fa/Fb exceeds 6.0×10 ⁻² , it means that the Fa is too large or the Fb is too small. As a result, for example, the peelability of the semiconductor processing adhesive tape during picking up the semiconductor package becomes insufficient, and peeling occurs not at the interface between the semiconductor package and the semiconductor processing adhesive tape, but at the interface between the temporary fixing tape and the semiconductor processing adhesive tape, resulting in pick-up failure. The preferred upper limit of the Fa/Fb is 2.0×10 ⁻² .

The specific value of Fa is not particularly limited, but a preferred lower limit is 0.03 N/25 mm, a preferred upper limit is 0.3 N/25 mm, a more preferred lower limit is 0.05 N/25 mm, a more preferred upper limit is 0.2 N/25 mm, and a further more preferred lower limit is 0.15 N/25 mm.
The specific value of the above Fb is not particularly limited, but a preferable lower limit is 5 N/25 mm and a preferable upper limit is 20 N/25 mm.

The measurement method of Fa may be, for example, the following method. First, the adhesive tape for semiconductor processing is placed on a copper plate so that the adhesive layer faces the copper plate (a copper plate that meets JIS H3100:2018, for example, C1100P, manufactured by Engineering Test Services Co., Ltd.). The adhesive tape for semiconductor processing and the copper plate are bonded together by moving a 2 kg rubber roller back and forth at a speed of 300 mm/min. Then, the test sample is left to stand at 23°C for 1 hour to prepare a test sample. The test sample after standing is heated for 1 hour using an oven heated to 150°C. After heating, the test sample is taken out and allowed to cool sufficiently under an environment of 23°C and 50% relative humidity. In accordance with JIS Z0237:2009, the adhesive tape for semiconductor processing is peeled off in a 180° direction at a tensile speed of 300 mm/min in an environment of a temperature of 23° C. and a relative humidity of 50% using an autograph (manufactured by Shimadzu Corporation), and the peel force is measured.

The measurement method of Fb may be, for example, the following method. First, the surface of the adhesive tape for semiconductor processing having the adhesive layer is fixed to a measurement base (SUS plate) using a double-sided tape (manufactured by Sekisui Chemical Co., Ltd., double-sided adhesive tape #3815, or an equivalent product). Next, the temporary fixing tape is placed on the adhesive tape for semiconductor processing so that the substrate surface of the adhesive tape for semiconductor processing and the adhesive layer of the temporary fixing tape face each other. The adhesive tape for semiconductor processing and the temporary fixing tape are bonded together by moving a 2 kg rubber roller back and forth at a speed of 300 mm/min. Thereafter, the test sample is left to stand at 23°C for 1 hour to prepare a test sample. The test sample after standing is heated for 1 hour using an oven heated to 150°C. After heating, the test sample is taken out and allowed to cool sufficiently under an environment of 23°C temperature and 50% relative humidity. In accordance with JIS Z0237:2009, the temporary fixing tape is peeled off in a 180° direction at a tensile speed of 300 mm/min in an environment of a temperature of 23° C. and a relative humidity of 50% using an autograph (manufactured by Shimadzu Corporation), and the peel force is measured.

When the adhesive layer of the semiconductor processing adhesive tape is a photocurable adhesive layer, the Fa is measured after the semiconductor processing adhesive tape is attached to a copper plate and before heating at 150°C for 1 hour, by irradiating the adhesive layer of the semiconductor processing adhesive tape with light to cure the adhesive layer.
An example of a method for irradiating the adhesive layer of the semiconductor processing adhesive tape with light is to irradiate the adhesive layer from the substrate side with 365 nm ultraviolet light using an ultra-high pressure mercury ultraviolet irradiator so that the cumulative irradiation amount is 3000 mJ/cm ^2. The irradiation intensity at this time is not particularly limited, but is preferably 50 to 100 mW/cm ² .

In order to adjust the Fa/Fb ratio to fall within the above range, the specific values of Fa and Fb may be adjusted. In order to increase the Fa/Fb ratio, the value of Fa may be increased or the value of Fb may be decreased, and in order to decrease the Fa/Fb ratio, the value of Fa may be decreased or the value of Fb may be increased.
The method of adjusting the Fa to the above range includes, for example, the method of adjusting the type, composition, physical properties, etc. of the adhesive layer of the semiconductor processing adhesive tape as described above. The method of adjusting the Fb to the above range includes, for example, the method of forming an easy-adhesion layer as described above on the surface of the substrate of the semiconductor processing adhesive tape opposite to the adhesive layer, i.e., on the back surface, and the method of adjusting the type, composition, physical properties, etc. of the adhesive layer of the temporary fixing tape as described above.

Next, the adhesive tape for semiconductor processing of the present invention will be described.
The pressure-sensitive adhesive tape for semiconductor processing of the present invention has a substrate and a pressure-sensitive adhesive layer laminated on one surface of the substrate. The substrate and the pressure-sensitive adhesive layer are the same as the substrate and the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape for semiconductor processing in the semiconductor processing laminate of the present invention.

The adhesive tape for semiconductor processing of the present invention satisfies the following formula (2).
2.0×10 ^-3 ≦(Fa/Fb')≦6.0×10 ^-2 (2)
In formula (2), Fa represents the peel force in the 180° direction after the adhesive tape for semiconductor processing is attached to a copper plate and heated at 150°C for 1 hour, and Fb' represents the peel force in the 180° direction after a temporary fixing tape having an adhesive strength to a SUS plate of 7.5 N/25 mm is attached to the base surface of the adhesive tape for semiconductor processing and heated at 150°C for 1 hour.

The above Fa/Fb' is the same value as the above-mentioned Fa/Fb.
However, the above Fb is a value relating to the temporary fixing tape constituting the semiconductor processing laminate of the present invention, whereas the semiconductor processing adhesive tape of the present invention does not have a temporary fixing tape, and therefore the above Fb' is a value relating to the more specific temporary fixing tape, which has an adhesive strength to SUS plate of 7.5 N/25 mm, and the semiconductor processing adhesive tape of the present invention.
When the Fa/Fb' is within the above range, the adhesive tape for semiconductor processing of the present invention does not lose its adhesiveness during dicing, and can be easily peeled off when the semiconductor package is picked up.

If the Fa/Fb' is less than 2.0× ^10-3 , this means that the Fa is too small or the Fb' is too large, which may result in insufficient adhesion of the adhesive tape for semiconductor processing during dicing, causing dicing cleaning water to penetrate into the interface between the semiconductor package and the adhesive tape for semiconductor processing, leading to peeling of the adhesive tape for semiconductor processing.
If the Fa/Fb' exceeds 6.0× ^10-2 , this means that the Fa is too large or the Fb' is too small, which results in, for example, in insufficient peelability of the adhesive tape for semiconductor processing when picking up a semiconductor package, and peeling occurs not at the interface between the semiconductor package and the adhesive tape for semiconductor processing but at the interface between the temporary fixing tape and the adhesive tape for semiconductor processing, resulting in poor pick-up.

The specific value of Fb' is not particularly limited, but a preferred lower limit is 5 N/25 mm and a preferred upper limit is 20 N/25 mm.

The above-mentioned temporary fixing tape having an adhesive strength of 7.5 N/25 mm to a SUS plate is not particularly limited as long as the adhesive strength to a SUS plate is 7.5 N/25 mm. As such a temporary fixing tape, a temporary fixing tape having a silicone adhesive layer can be suitably used, and a suitable commercially available product is, for example, Kapton (registered trademark) adhesive tape 650R #50 (manufactured by Teraoka Corporation).
The adhesive strength of the temporary fixing tape to the SUS plate can be measured by, for example, the following method. First, the temporary fixing tape is placed on the SUS plate. The temporary fixing tape and the SUS plate are bonded together by rolling a 2 kg rubber roller back and forth on the temporary fixing tape at a speed of 300 mm/min. Then, the test sample is left to stand at 23°C for 1 hour to prepare a test sample. After standing, the test sample is peeled off in the 180° direction at a pulling speed of 300 mm/min in an environment of 23°C and 50% relative humidity using an autograph (manufactured by Shimadzu Corporation) in accordance with JIS Z0237:2009, and the peel strength is measured.

The method for producing the semiconductor processing adhesive tape of the present invention is not particularly limited, and an example thereof includes a method in which a solution of the adhesive that constitutes the adhesive layer is prepared, and then the solution is applied to the surface opposite the easy-adhesion layer of a substrate on which an easy-adhesion layer has been formed in advance by back treatment, to form an adhesive layer.
Furthermore, the semiconductor processing laminate of the present invention obtained in this manner can be obtained by attaching the semiconductor processing adhesive tape of the present invention to the circuit surface of a semiconductor package as necessary, or by dicing the semiconductor package together with the semiconductor processing adhesive tape of the present invention, and then laminating it on a temporary fixing tape.

FIG. 1 is a cross-sectional view showing a schematic example of the laminate for semiconductor processing of the present invention and the pressure-sensitive adhesive tape for semiconductor processing of the present invention.
1 has a temporary fixing tape 3 and an adhesive tape 2 for semiconductor processing laminated on the temporary fixing tape 3. The adhesive tape 2 for semiconductor processing has a base material 2b and an adhesive layer 2a laminated on one surface of the base material 2b, and is laminated on the temporary fixing tape 3 so that the base material 2b of the adhesive tape 2 for semiconductor processing is in contact with the adhesive layer (not shown) of the temporary fixing tape 3.

In the laminate for semiconductor processing of the present invention and the pressure-sensitive adhesive tape for semiconductor processing of the present invention, a semiconductor package may further be laminated on the pressure-sensitive adhesive layer of the pressure-sensitive adhesive tape for semiconductor processing.
FIG. 2 is a cross-sectional view showing a schematic diagram of another example of the semiconductor processing laminate of the present invention and the semiconductor processing pressure-sensitive adhesive tape of the present invention.
2 has a temporary fixing tape 3, an adhesive tape 2 for semiconductor processing laminated on the temporary fixing tape 3, and further has a semiconductor package 4 laminated on an adhesive layer 2a of the adhesive tape 2 for semiconductor processing. The adhesive tape 2 for semiconductor processing is laminated so that the adhesive layer 2a is in contact with the circuit surface of the semiconductor package 4.

In addition, in Figures 1 and 2, semiconductor processing laminate 1 is an example of a semiconductor processing laminate of the present invention, and semiconductor processing adhesive tape 2 constitutes an example of a semiconductor processing laminate of the present invention and is also an example of a semiconductor processing adhesive tape of the present invention.

The uses of the semiconductor processing laminate of the present invention and the semiconductor processing adhesive tape of the present invention are not particularly limited, but since they can be easily peeled off when picking up the semiconductor package without impairing adhesion during dicing, they are preferably used in a manufacturing method for semiconductor device.
In particular, the laminate for semiconductor processing of the present invention and the pressure-sensitive adhesive tape for semiconductor processing of the present invention are more preferably used for the shielding treatment of semiconductor packages, and even more preferably used for a series of steps from dicing a semiconductor package to subjecting the resulting individual semiconductor packages to a shielding treatment. Examples of the shielding treatment step include IR shielding treatment and electromagnetic wave shielding treatment, and among these, electromagnetic wave shielding treatment is preferred.

The present invention also provides a method for manufacturing a semiconductor device, which includes dicing a semiconductor package using the adhesive tape for semiconductor processing of the present invention and forming a metal film on the back and side of the individualized semiconductor package obtained by dicing, the method including the steps of: attaching the adhesive tape for semiconductor processing to the circuit surface of the semiconductor package; dicing the semiconductor package to which the adhesive tape for semiconductor processing has been attached to obtain a laminate having the individualized semiconductor package and the individualized adhesive tape for semiconductor processing; temporarily fixing the laminate having the individualized semiconductor package and the individualized adhesive tape for semiconductor processing on a temporary fixing tape such that the individualized adhesive tape for semiconductor processing side is in contact with the laminate; forming a metal film on the back and side of the individualized semiconductor package on the temporary fixing tape; and peeling the individualized semiconductor package having the metal film formed on the back and side from the individualized adhesive tape for semiconductor processing and picking it up.

The method for manufacturing a semiconductor device of the present invention involves dicing a semiconductor package using the adhesive tape for semiconductor processing of the present invention, and forming a metal film on the back and side surfaces of the individual semiconductor packages obtained by dicing.
3 is a diagram showing a schematic diagram of an example of a method for manufacturing a semiconductor device according to the present invention. Hereinafter, the method for manufacturing a semiconductor device according to the present invention will be described with reference to FIG.

In the method for manufacturing a semiconductor device of the present invention, first, as shown in FIG. 3(a), a step (1) is performed in which an adhesive tape 2 for semiconductor processing is applied to the circuit surface of a semiconductor package 4.
The method for attaching the pressure-sensitive adhesive tape for semiconductor processing is not particularly limited, and examples thereof include a method using a laminator.

When the adhesive layer of the semiconductor processing adhesive tape is a photocurable adhesive layer, after the step (1), it is preferable to carry out a step (6) of irradiating the adhesive layer of the semiconductor processing adhesive tape with light (not shown).
The method of irradiating the adhesive layer of the semiconductor processing adhesive tape with light includes, for example, a method of irradiating the adhesive layer with ultraviolet light of 350 to 410 nm from the substrate side using an ultra-high pressure mercury ultraviolet irradiator. The irradiation intensity is not particularly limited, but is preferably 20 to 100 mW/ ^cm2 , and the cumulative irradiation amount is also not particularly limited, but is preferably 300 to 3000 mJ/ ^cm2 .

In the manufacturing method of the semiconductor device of the present invention, a step (2) is then performed in which the semiconductor package 4 to which the adhesive tape 2 for semiconductor processing is attached is diced to obtain a laminate having individual semiconductor packages and individual adhesive tape 2 for semiconductor processing, as shown in Figure 3 (b).
The dicing method is not particularly limited, and for example, the semiconductor package to which the adhesive tape for semiconductor processing is attached is temporarily fixed on a dicing tape, the dicing tape is attached to a dicing frame, and the dicing tape is separated into individual pieces using a dicing device, and then the dicing tape is peeled off. The dicing device is not particularly limited, and for example, DFD6361 manufactured by DISCO Corporation can be used.

In the manufacturing method of the semiconductor device of the present invention, a step (3) is then performed in which a laminate having an individualized semiconductor package 4 and an individualized adhesive tape for semiconductor processing 2 is temporarily fixed onto a temporary fixing tape 3 so that the adhesive tape for semiconductor processing 2 side is in contact, as shown in Figure 3 (c).

In the method for manufacturing a semiconductor device of the present invention, next, as shown in FIG. 3( d ), a step ( 4 ) is carried out in which a metal film 5 is formed on the rear surface and the side surface of each individual semiconductor package 4 on the temporary fixing tape 3 .
The method for forming the metal film is not particularly limited, and examples thereof include a method for forming a film made of stainless steel, copper, aluminum, gold, silver, zinc, nickel, platinum, chromium, titanium, or an alloy or oxide of these metals by sputtering or the like.

3(e), the method for manufacturing a semiconductor device of the present invention then performs a step (5) of peeling and picking up the individualized semiconductor packages 4 having the metal film 5 formed on the back and sides from the individualized adhesive tape for semiconductor processing 2. This allows the production of individualized semiconductor packages having the metal film formed on the back and sides.

According to the present invention, it is possible to provide a laminate for semiconductor processing, which does not lose adhesion during dicing and can be easily peeled off when picking up a semiconductor package, and an adhesive tape for semiconductor processing. Also, according to the present invention, it is possible to provide a method for manufacturing a semiconductor device using the adhesive tape for semiconductor processing.

1 is a cross-sectional view that illustrates an example of a laminate for semiconductor processing of the present invention and an adhesive tape for semiconductor processing of the present invention. FIG. 2 is a cross-sectional view showing a schematic diagram of another example of the semiconductor processing laminate of the present invention and the semiconductor processing pressure-sensitive adhesive tape of the present invention. 1A to 1E are diagrams illustrating an example of a method for manufacturing a semiconductor device according to the present invention. 1(a1) to (a4) are diagrams illustrating the steps in the dicing process evaluation and pick-up process evaluation of the adhesive tapes for semiconductor processing obtained in the Examples and Comparative Examples. FIG.

The present invention will be described in more detail below with reference to examples, but the present invention is not limited to these examples.

(Synthesis of Adhesive Polymer)
(1) Synthesis of Adhesive Polymer A A reactor equipped with a thermometer, a stirrer, and a cooling tube was prepared. 93 parts by weight of 2-ethylhexyl acrylate as an alkyl (meth)acrylate ester, 1 part by weight of acrylic acid as a functional group-containing monomer, 6 parts by weight of hydroxyethyl methacrylate, 0.01 parts by weight of lauryl mercaptan, and 80 parts by weight of ethyl acetate were added to the reactor, and the reactor was heated to start reflux. Next, 0.01 parts by weight of 1,1-bis(t-hexylperoxy)-3,3,5-trimethylcyclohexane was added as a polymerization initiator to start polymerization under reflux. Next, 0.01 parts by weight of 1,1-bis(t-hexylperoxy)-3,3,5-trimethylcyclohexane was added 1 hour and 2 hours after the start of polymerization, and 0.05 parts by weight of t-hexylperoxypivalate was added 4 hours after the start of polymerization to continue the polymerization reaction. Then, 8 hours after the start of polymerization, an ethyl acetate solution of a functional group-containing (meth)acrylic polymer having a solid content of 55% by weight and a weight average molecular weight of 600,000 was obtained.
3.5 parts by weight of 2-isocyanatoethyl methacrylate was added to 100 parts by weight of the resin solid content of the ethyl acetate solution containing the obtained functional group-containing (meth)acrylic polymer and reacted to obtain an adhesive polymer A.

(2) Synthesis of Adhesive Polymer B A reactor equipped with a thermometer, a stirrer, and a cooling tube was prepared. After adding 98 parts by weight of 2-ethylhexyl acrylate as an alkyl (meth)acrylate ester, 2 parts by weight of hydroxyethyl methacrylate as a functional group-containing monomer, 0.01 parts by weight of lauryl mercaptan, and 80 parts by weight of ethyl acetate to the reactor, the reactor was heated to start reflux. Next, 0.01 parts by weight of 1,1-bis(t-hexylperoxy)-3,3,5-trimethylcyclohexane was added as a polymerization initiator to the reactor, and polymerization was started under reflux. Next, 0.01 parts by weight of 1,1-bis(t-hexylperoxy)-3,3,5-trimethylcyclohexane was added at 1 hour and 2 hours after the start of polymerization, and further 0.05 parts by weight of t-hexylperoxypivalate was added at 4 hours after the start of polymerization to continue the polymerization reaction. Then, 8 hours after the start of polymerization, an ethyl acetate solution of a functional group-containing (meth)acrylic polymer having a solid content of 55% by weight and a weight average molecular weight of 600,000 was obtained.
To 100 parts by weight of the resin solid content of the obtained ethyl acetate solution containing the functional group-containing (meth)acrylic polymer, 1 part by weight of 2-isocyanatoethyl methacrylate was added and reacted to obtain an adhesive polymer B.

(3) Adhesive polymer C
Adhesive polymer C (SK Dyne 1495, manufactured by Soken Chemical Industries, Ltd.) was used.

(Back surface treatment of substrate)
(1) Treatment A (Silica Deposition)
A polyethylene terephthalate film having a thickness of 100 μm and having a surface on which silica was vapor-deposited to a thickness of 50 nm was used as treated film A.

(2) Treatment B (corona treatment)
A 100 μm thick polyethylene terephthalate film (Lumirror S10, manufactured by Toray Industries, Inc.) was subjected to a corona treatment by moving the film back and forth once using a high frequency power supply device (AGI-020, manufactured by Kasuga Electric Co., Ltd.) under conditions of an output of 0.24 kW, a speed of 40 mm/min, and an electrode distance of 1 mm, to obtain treated film B.

(3) Treatment C (Orgatics PC620)
A titanium oligomer-based coating agent (Orgatics PC620, manufactured by Matsumoto Fine Chemical Co., Ltd.) was applied to a polyethylene terephthalate film (Lumirror S10, manufactured by Toray Industries, Inc.) having a thickness of 100 μm to a thickness of 300 nm to prepare treated film C.

(4) Processing D (ATO)
A polyethylene terephthalate film having a thickness of 100 μm and a surface coated with antimony-doped tin oxide to a thickness of 300 nm was used as treated film D.

(5) Treatment E (Colcoat N103X)
A polysiloxane-based coating agent (Colcoat N103X, manufactured by Colcoat Co., Ltd.) was applied to a polyethylene terephthalate film (Lumirror S10, manufactured by Toray Industries, Inc.) having a thickness of 100 μm to a thickness of 300 nm to prepare treated film E.

(6) Treatment F (Polyment NK380)
A treated film F was prepared by applying an acrylic polymer coating agent (Polyment NK380, manufactured by Nippon Shokubai Co., Ltd.) to a thickness of 300 nm on a polyethylene terephthalate film (Lumirror S10, manufactured by Toray Industries, Inc.) having a thickness of 100 μm.

(7) Treatment G (alumina deposition)
A polyethylene terephthalate film having a thickness of 100 μm and having a surface on which alumina was vapor-deposited to a thickness of 10 nm was used as treated film G.

(Examples 1 to 10 and Comparative Examples 1 to 3)
(1) Preparation of Pressure-Sensitive Adhesive: An adhesive strength regulator, a crosslinking agent, and a photopolymerization initiator were mixed with 100 parts by weight of the resin solid content of the ethyl acetate solution of the pressure-sensitive adhesive polymer obtained above according to Table 1 to obtain an ethyl acetate solution of the pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer. The compounds used in the blending were as follows:
Adhesion regulator: EBECRYL350, manufactured by Daicel Allnex Co., Ltd. Crosslinking agent A: Coronate L, manufactured by Nippon Urethane Industry Co., Ltd. Crosslinking agent B: Tetrad X, manufactured by Mitsubishi Gas Chemical Co., Ltd. Photopolymerization initiator: Esacure One, manufactured by Nippon SiberHegner Co., Ltd.

(2) Manufacturing of adhesive tape for semiconductor processing The obtained adhesive ethyl acetate solution was applied to the substrate that had been subjected to the back treatment described above with a doctor knife so that the thickness of the dry film was 100 μm, and the substrate was left to stand at room temperature for 10 minutes. After that, the coating solution was dried by heating at 110 ° C for 5 minutes using an oven that had been preheated to 110 ° C, and an adhesive tape for semiconductor processing was obtained. A polyethylene terephthalate film with a thickness of 50 μm was attached as a separator to the adhesive layer side of the obtained adhesive tape for semiconductor processing to protect the adhesive layer until use.

(3) Measurement of Fa: The surface of a copper plate (C1100P, JIS H3100) having a thickness of 1 mm was washed with ethanol and thoroughly dried. An adhesive tape for semiconductor processing, previously cut to a width of 25 mm and a length of 10 cm, was applied to the copper plate by rolling a 2 kg roller back and forth once to obtain a laminate.
In Examples 1 to 10 and Comparative Examples 1 and 3 in which the adhesive tape for semiconductor processing is of the photocurable type, the adhesive layer was irradiated with 365 nm ultraviolet light from the substrate side for 30 seconds using an ultra-high pressure mercury ultraviolet irradiator to cure the adhesive layer. The illuminance was adjusted so that the irradiation intensity was 100 mW/cm ^2. The laminate was then heat-treated for 1 hour using an oven heated to 150°C. In Comparative Example 2 in which the adhesive tape for semiconductor processing is not of the photocurable type, the laminate was heat-treated for 1 hour using an oven heated to 150°C without irradiating with ultraviolet light. After a predetermined time had passed, the laminate was taken out and allowed to cool sufficiently in an environment of 23°C and 50% relative humidity.
Using an Autograph (manufactured by Shimadzu Corporation), the adhesive tape for semiconductor processing was peeled off in a 180° direction at a pulling speed of 300 mm/min in an environment of a temperature of 23° C. and a relative humidity of 50%, and the peel force Fa was measured.

(4) Measurement of Fb As the temporary fixing tape, Kapton (registered trademark) adhesive tape 650R #50 manufactured by Teraoka Corporation was used. The adhesive strength of this temporary fixing tape to a SUS plate (surface finished with BA treatment) was measured to be 7.5 N/25 mm. The adhesive strength of the temporary fixing tape to a SUS plate (surface finished with BA treatment) was measured as follows.
The temporary fixing tape was applied to a SUS plate by rolling a 2 kg roller back and forth once under an environment of a temperature of 23° C. and a relative humidity of 50%, to obtain a laminate. After aging for 60 minutes under the same temperature and humidity environment, the temporary fixing tape was peeled off in a 180° direction at a pulling speed of 300 mm/min under the same temperature and humidity environment using an autograph (manufactured by Shimadzu Corporation), and the peel strength was measured.

The surface of the substrate opposite to the surface that had been subjected to the back treatment before forming the adhesive layer was attached to a copper plate (C1100P) using a double-sided tape (manufactured by Sekisui Chemical Co., Ltd., double-sided tape 560). A temporary fixing tape previously cut to a width of 25 mm and a length of 10 cm was applied to the surface of the substrate that had been subjected to the back treatment by rolling a 2 kg roller back and forth once to obtain a laminate. The laminate was heat-treated for 1 hour using an oven heated to 150°C. After a predetermined time had passed, the laminate was taken out and allowed to cool sufficiently under an environment of a temperature of 23°C and a relative humidity of 50%.
Using an autograph (manufactured by Shimadzu Corporation), the temporary fixing tape was peeled off in a 180° direction at a pulling speed of 300 mm/min in an environment of a temperature of 23° C. and a relative humidity of 50%, and the peel force Fb was measured.

<Evaluation>
The adhesive tapes for semiconductor processing obtained in the Examples and Comparative Examples were evaluated by the following methods. The results are shown in Table 1.

(1) Dicing Process Evaluation Each process shown in (a1) to (a3) in FIG. 4 was carried out as follows.
The adhesive tape 2 for semiconductor processing was attached to the surface having the copper foil 7a of the copper-clad laminate substrate 7 (Mitsubishi Gas Chemical Company, CCL-EL190T/GEPL-190T) (FIG. 4(a1)). In Examples 1 to 10 and Comparative Examples 1 and 3 in which the adhesive tape 2 for semiconductor processing was a photocurable type, the adhesive layer 2a was irradiated with 365 nm ultraviolet light from the substrate 2b side using an ultra-high pressure mercury ultraviolet irradiator for 30 seconds to cure the adhesive layer 2a. The illuminance was adjusted so that the irradiation intensity was 100 mW/ ^cm2 .
The copper-clad laminate substrate 7 with the adhesive tape 2 for semiconductor processing attached was temporarily fixed on a dicing tape 8 (Elegrip UPH-1510M4, manufactured by Denka Co., Ltd.) with the copper-clad laminate substrate 7 side in contact, and was attached to a dicing frame 9 (Figure 4 (a2)).
The copper-clad laminate substrate 7 with the adhesive tape 2 for semiconductor processing attached thereto was diced (cut into chips) into pieces 10 mm square using a dicing device (DFD6361, manufactured by DISCO Corporation) (FIG. 4(a3)).

The interface between the individualized copper-clad laminate substrate 7 and the adhesive tape for semiconductor processing 2 was observed under a microscope. The cases where the dicing cleaning water did not penetrate from the interface or the penetration distance of the dicing cleaning water was less than 0.5 mm were marked with ⊚, the cases where the penetration distance of the dicing cleaning water was 0.5 mm or more and less than 1 mm were marked with ◯, and the cases where the penetration distance of the dicing cleaning water was 1 mm or more were marked with ×.

(2) Pick-up process evaluation The process shown in FIG. 4(a4) was carried out as follows.
After singulation as shown in FIG. 4(a3), the dicing tape 8 was irradiated with 365 nm ultraviolet light from the side where the copper-clad laminate substrate 7 was not laminated, using an ultra-high pressure mercury ultraviolet irradiator, for 10 seconds, to harden the dicing tape 8. The illuminance was adjusted so that the irradiation intensity was 50 mW/ ^cm2 . The dicing tape 8 was then peeled off. The resulting individualized copper-clad laminate substrate 7 was temporarily fixed on a temporary fixing tape 3 (Teraoka Corporation, Kapton (registered trademark) adhesive tape 650R #50) so that the adhesive tape 2 side for semiconductor processing was in contact, and was again attached to the dicing frame 9 (FIG. 4(a4)).
The individual copper-clad laminate substrate 7 was heat-treated together with the dicing frame 9 for one hour using an oven that had been heated to 150° C. After a predetermined time had elapsed, the individual copper-clad laminate substrate 7 was taken out together with the dicing frame 9 and allowed to cool sufficiently in an environment at a temperature of 23° C. and a relative humidity of 50%.

The individualized copper-clad laminate substrate 7 was picked up using a die bonder (BestemD02, manufactured by Canon Machinery). When the individualized copper-clad laminate substrate 7 and the adhesive tape for semiconductor processing 2 were peeled off at the interface and picked up with a yield of 99% or more, it was marked with ⊚, when the yield was 90% or more but less than 99%, it was marked with ◯, and when the yield was less than 90%, it was marked with ×.

(3) Overall Evaluation A case in which the evaluation was rated ◯ or above in both the dicing process evaluation and the pick-up process evaluation was rated ◯, and a case in which the evaluation was x in either evaluation was rated x.

According to the present invention, it is possible to provide a laminate for semiconductor processing, which does not lose adhesion during dicing and can be easily peeled off when picking up a semiconductor package, and an adhesive tape for semiconductor processing. Also, according to the present invention, it is possible to provide a method for manufacturing a semiconductor device using the adhesive tape for semiconductor processing.

Reference Signs List 1 Laminate for semiconductor processing 2 Adhesive tape for semiconductor processing 2a Adhesive layer 2b Substrate 3 Temporary fixing tape 4 Semiconductor package 5 Metal film 6 Pick-up needle 7 Copper-clad laminate substrate 7a Copper foil 8 Dicing tape 9 Dicing frame

Claims (9)

A laminate for semiconductor processing having a temporary fixing tape and an adhesive tape for semiconductor processing laminated on the temporary fixing tape,
The temporary fixing tape has at least a pressure-sensitive adhesive layer,
The adhesive tape for semiconductor processing has a base material and an adhesive layer laminated on one surface of the base material, and is laminated on the temporary fixing tape so that the base material of the adhesive tape for semiconductor processing is in contact with the adhesive layer of the temporary fixing tape,
A laminate for semiconductor processing, characterized in that the adhesive tape for semiconductor processing and the temporary fixing tape satisfy the following formula (1).
2.0×10 ^-3 ≦(Fa/Fb)≦6.0×10 ^-2 (1)
In formula (1), Fa represents the peel force in the 180° direction after the adhesive tape for semiconductor processing is applied to a copper plate and heated at 150°C for 1 hour, and Fb represents the peel force in the 180° direction after the temporary fixing tape is applied to the substrate surface of the adhesive tape for semiconductor processing and heated at 150°C for 1 hour. The semiconductor processing laminate according to claim 1, characterized in that the adhesive layer of the semiconductor processing adhesive tape is a photocurable adhesive layer. The semiconductor processing laminate according to claim 1 or 2, characterized in that the temporary fixing tape has a base material and a silicone adhesive layer laminated on one side of the base material, the base material of the semiconductor processing adhesive tape has an easy-adhesion layer on the surface opposite to the adhesive layer, and the easy-adhesion layer is a SiOx layer, a metal oxide layer, an organometallic compound layer , a silicone compound layer , a polymerizable polymer layer, a corona treatment layer or a plasma treatment layer . An adhesive tape for semiconductor processing having a substrate and an adhesive layer laminated on one surface of the substrate,
An adhesive tape for semiconductor processing, characterized by satisfying the following formula (2):
2.0×10 ^-3 ≦(Fa/Fb')≦6.0×10 ^-2 (2)
In formula (2), Fa represents the peel force in the 180° direction after the adhesive tape for semiconductor processing is attached to a copper plate and heated at 150°C for 1 hour, and Fb' represents the peel force in the 180° direction after a temporary fixing tape having an adhesive strength to a SUS plate of 7.5 N/25 mm is attached to the base surface of the adhesive tape for semiconductor processing and heated at 150°C for 1 hour. The adhesive tape for semiconductor processing according to claim 4, characterized in that the substrate has an easy-adhesion layer on the surface opposite the adhesive layer. 6. The adhesive tape for semiconductor processing according to claim 5, wherein the easy-adhesion layer is a SiOx layer, a metal oxide layer, an organometallic compound layer, a silicone compound layer , a polymerizable polymer layer, a corona-treated layer or a plasma-treated layer . The adhesive tape for semiconductor processing according to claim 4, 5 or 6, characterized in that it is used for shielding processing of semiconductor packages. A method for manufacturing a semiconductor device, comprising the steps of dicing a semiconductor package and forming a metal film on a back surface and a side surface of each of the individual semiconductor packages obtained by dicing, using the adhesive tape for semiconductor processing according to claim 4, 5, 6 or 7,
A step (1) of attaching the adhesive tape for semiconductor processing to a circuit surface of a semiconductor package;
A step (2) of dicing the semiconductor package to which the adhesive tape for semiconductor processing is attached to obtain a laminate having an individual semiconductor package and an individual adhesive tape for semiconductor processing;
A step (3) of temporarily fixing a laminate having the individualized semiconductor package and the individualized adhesive tape for semiconductor processing on a temporary fixing tape so that the individualized adhesive tape for semiconductor processing is in contact with the laminate;
A step (4) of forming a metal film on the back surface and the side surface of the individualized semiconductor package on the temporary fixing tape;
and (5) peeling the individualized semiconductor packages having metal films formed on their back and side surfaces from the individualized adhesive tape for semiconductor processing and picking them up. The method for manufacturing a semiconductor device according to claim 8, characterized in that after step (1), a step (6) of irradiating the adhesive layer of the semiconductor processing adhesive tape with light is carried out.

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