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JP7696563B2 - Method for evaluating the effect of ground improvement using chemical grouting method - Google Patents
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JP7696563B2 - Method for evaluating the effect of ground improvement using chemical grouting method - Google Patents

Method for evaluating the effect of ground improvement using chemical grouting method Download PDF

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JP7696563B2
JP7696563B2 JP2021114336A JP2021114336A JP7696563B2 JP 7696563 B2 JP7696563 B2 JP 7696563B2 JP 2021114336 A JP2021114336 A JP 2021114336A JP 2021114336 A JP2021114336 A JP 2021114336A JP 7696563 B2 JP7696563 B2 JP 7696563B2
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賢二 下坂
光洋 赤塚
芳信 村田
敬三 苅谷
有紀 花田
和那 雪吹
厚 八嶋
康年 大野
孝芳 伊藤
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特許法第30条第2項適用 第14回地盤改良シンポジウム論文集(USB)、「電気検層を用いた薬液注入工法の出来高確認」、令和2年11月5日(発送日)Patent Law Article 30, Paragraph 2 Application 14th Ground Improvement Symposium Proceedings (USB), "Confirmation of Completion of Chemical Injection Method Using Electrical Logging", November 5, 2020 (shipping date)

本発明は、電気検層を用いた薬液注入工法による地盤改良効果の評価方法に関する。 The present invention relates to a method for evaluating the effectiveness of ground improvement using a chemical injection method that uses electrical logging.

従来より、埋立て地等の軟弱地盤の地盤強化のために、水ガラス(珪酸ナトリウム)などからなる薬液を地盤に注入する薬液注入工法によって地盤改良工事が行われている。前記薬液注入工法による地盤改良工事では、施行後に、薬液が対象地盤に満遍なく行き渡っているかを確認する施工確認調査が行われる。 Traditionally, to strengthen soft ground such as reclaimed land, ground improvement work has been carried out using a chemical injection method in which a chemical solution made of water glass (sodium silicate) or the like is injected into the ground. After construction using the chemical injection method, a construction inspection is carried out to check whether the chemical solution has been evenly distributed throughout the target ground.

薬液注入工法の施工確認調査として最も一般的な方法は、改良土を一軸圧縮強さ(qu)により評価する方法である。しかし、薬液注入による改良土の一軸圧縮強さは、qu=50~100kPa程度と小さく、対象地盤によっては強度のバラツキが生じ適正に評価されない場合があった。すなわち、前記一軸圧縮強さquによる評価において、quが50~100kPa程度の小さな地盤の場合、事後調査における試料採取時や供試体作成時に、強度低下に繋がる乱れが生じやすい。また、対象地盤によっては供試体内に貝殻、木片、シルト、有機質土等が混入することにより、強度のバラツキが生じて適正に評価できない場合があった。 The most common method for construction confirmation surveys of the chemical grouting method is to evaluate the improved soil using its unconfined compressive strength (qu). However, the unconfined compressive strength of soil improved by chemical grouting is small, at around qu = 50 to 100 kPa, and depending on the target ground, there are cases where the strength varies and the soil is not properly evaluated. In other words, when evaluating using the unconfined compressive strength qu, in cases where the ground has a small qu of around 50 to 100 kPa, disturbances that lead to a decrease in strength are likely to occur when taking samples or preparing test specimens in follow-up surveys. Also, depending on the target ground, there are cases where the test specimens contain shells, wood chips, silt, organic soil, etc., which causes strength variations and makes it impossible to properly evaluate the soil.

このような一軸圧縮強さ試験以外の方法により改良地盤の品質を直接的に評価する方法として、国土交通省の埋立地等における薬液注入工法による地盤改良工事に関する検討委員会等において、ピエゾドライブコーン(PDC)などのように間隙水圧が測定できる動的コーン貫入試験が提唱されている。前記ピエゾドライブコーンは、圧力センサを内蔵したコーンをハンマーの打撃で地盤に貫入し、1打撃毎の貫入量と貫入時の間隙水圧の応答値を計測するものである。貫入量からは、標準貫入試験のN値に相当する地盤の動的な貫入抵抗値(Nd値)が1打撃毎に算出される。また、打撃貫入で生ずる地盤内の間隙水圧から、細粒分含有率Fcが推定されるとともに、この間隙水圧を用いて得られる累積過剰間隙水圧比が薬液の地盤への浸透を評価する指標となり得ることなどが上記の検討委員会等で提案されている。 As a method to directly evaluate the quality of improved ground other than the uniaxial compressive strength test, the Ministry of Land, Infrastructure, Transport and Tourism's review committee on ground improvement work using chemical injection methods on reclaimed land, etc. has proposed a dynamic cone penetration test that can measure pore water pressure, such as a piezo-driven cone (PDC). The piezo-driven cone penetrates a cone with a built-in pressure sensor into the ground by striking it with a hammer, and measures the penetration amount and the pore water pressure response value at the time of penetration for each strike. From the penetration amount, the dynamic penetration resistance value (Nd value) of the ground, which corresponds to the N value of the standard penetration test, is calculated for each strike. In addition, the above review committee has proposed that the fine grain content Fc can be estimated from the pore water pressure in the ground generated by the strike penetration, and that the cumulative excess pore water pressure ratio obtained using this pore water pressure can be an index for evaluating the penetration of chemicals into the ground.

また、薬液注入工法の施工確認調査の他の方法として、電気検層が挙げられる。電気検層は、薬液注入工法では地盤の間隙水が薬液に置き換えられ地盤の圧縮率が変化するとともに、薬液が固化することで地盤の強度が増加することから、改良後の地盤は電気伝導度の特性が変化することを利用したものである。この電気検層では、施工前後における電気比抵抗値の低下によって、改良効果の定性的判断が可能になる。前記電気検層の測定手順は、ボーリング孔内に、上下方向に所定の間隔で複数の電極が備えられた測定プローブを挿入した後、電流電極に通電し、電極間の電位差から比抵抗を求める。 Another method for confirming the construction of the liquid injection method is electrical logging. Electrical logging takes advantage of the fact that in the liquid injection method, the pore water in the ground is replaced with a liquid chemical, changing the compressibility of the ground, and the strength of the ground increases as the liquid solidifies, resulting in a change in the electrical conductivity characteristics of the improved ground. With electrical logging, a qualitative assessment of the improvement effect can be made by checking the decrease in electrical resistivity before and after construction. The measurement procedure for electrical logging involves inserting a measurement probe equipped with multiple electrodes at a specified interval in the vertical direction into the borehole, then passing electricity through the current electrodes and determining the resistivity from the potential difference between the electrodes.

このような電気検層による地盤改良工事の品質確認方法として、下記特許文献1においては、外面に環状の電極が取り付けられた電極取付体を改良体内に挿入し、電極取付体の周囲に造成された改良体に通電し、かかる状態で計測された電流電極間の電流及び電位電極間の電位差を用いて比抵抗を求める方法が開示されている。また、非特許文献1においては、薬液注入前後の電気比抵抗の変化から、薬液充填率を求める方法が開示されている。 As a method for checking the quality of ground improvement work using such electrical logging, the following Patent Document 1 discloses a method in which an electrode attachment body with a ring-shaped electrode attached to its outer surface is inserted into the improvement body, electricity is passed through the improvement body constructed around the electrode attachment body, and resistivity is calculated using the current between the current electrodes and the potential difference between the potential electrodes measured in this state. In addition, Non-Patent Document 1 discloses a method for calculating the chemical solution filling rate from the change in electrical resistivity before and after chemical solution injection.

本出願人等においても、下記特許文献2において、バラツキが少なく、改良地盤の品質が直接的に確認できる地盤改良効果の確認方法として、薬液注入工法による地盤改良効果の確認方法であって、地盤改良後において、小型動的コーン貫入試験により深度とNd値との関係を示したNd値の深度分布図を得て、地盤改良前後における前記Nd値の増分量から地盤改良効果を確認する1次的効果確認を行い、前記1次的効果確認によって地盤改良効果が認められない場合に、前記小型動的コーン貫入試験の貫入孔に電極を備えた測定プローブを挿入して比抵抗を測定する電気検層を行い、深度と比抵抗との関係を示した比抵抗の深度分布図を得て、地盤改良前後における前記比抵抗の減分量から地盤改良効果を確認する2次的効果確認を行うようにする地盤改良効果の確認方法を提案した。 The present applicants have also proposed in Patent Document 2 below a method for confirming the effect of ground improvement using a chemical injection method, as a method for confirming the effect of ground improvement with little variation and allowing direct confirmation of the quality of the improved ground, in which after ground improvement, a small dynamic cone penetration test is used to obtain a depth distribution map of Nd values showing the relationship between depth and Nd value, and a primary effect confirmation is performed to confirm the effect of ground improvement from the increment in the Nd value before and after ground improvement. If the effect of ground improvement is not confirmed by the primary effect confirmation, an electrical logging is performed to measure resistivity by inserting a measuring probe equipped with an electrode into the penetration hole of the small dynamic cone penetration test, a depth distribution map of resistivity showing the relationship between depth and resistivity is obtained, and a secondary effect confirmation is performed to confirm the effect of ground improvement from the decrement in resistivity before and after ground improvement.

特開2000-46510号公報JP 2000-46510 A 特開2021-4473号公報JP 2021-4473 A

小峯秀雄、「電気比抵抗による薬液注入改良部の充填率の評価方法」、土木学会論文集、No.463/III-22、p.153-162、1993年3月Hideo Komine, "Evaluation method of filling rate of improved part by grouting using electrical resistivity", Journal of Japan Society of Civil Engineers, No. 463/III-22, pp. 153-162, March 1993 菅野高弘等、「液状化対策として薬液を注入した地盤の原位置調査による強度評価法」、港湾空港技術研究所資料、No.1366,pp.2020Takahiro Kanno et al., "Strength evaluation method for in-situ investigation of ground injected with chemicals as a liquefaction countermeasure", Port and Airport Research Institute Materials, No. 1366, pp. 2020

しかしながら、前記特許文献1に係る方法は、計測した比抵抗から改良体の出来高、すなわち断面積、大きさ、直径等を算出するものであり、前記非特許文献1に係る方法は、電気比抵抗から薬液充填率を算出するものであり、前記特許文献2に係る方法は、Nd値の増分量だけでは地盤改良効果が判断できない場合でも、比抵抗の減量分から地盤改良固結体の存在を確認できるようにしたものである。 However, the method of Patent Document 1 calculates the volume of the improved body, i.e., cross-sectional area, size, diameter, etc., from the measured resistivity, while the method of Non-Patent Document 1 calculates the chemical solution filling rate from the electrical resistivity, and the method of Patent Document 2 makes it possible to confirm the presence of a ground improvement body from the decrease in resistivity even when the effect of ground improvement cannot be determined from the increase in the Nd value alone.

前述したように、薬液注入工法による地盤改良効果の1次的評価方法は、一軸圧縮強さquにより評価する方法であるにも拘わらず、前述の従来技術はいずれも固結体の強度を直接的な評価対象とするものではない。 As mentioned above, the primary method for evaluating the effect of ground improvement using chemical injection methods is to evaluate the uniaxial compressive strength qu, but none of the above-mentioned conventional techniques directly evaluate the strength of the solidified body.

また、電気比抵抗の計測によって地盤改良効果を評価する場合、沿岸地帯の埋立地等、間隙水の塩分濃度が高く電気比抵抗が小さい場合では、薬液浸透の判別に適用できる可能性は低いとの指摘もされている(非特許文献2)。 It has also been pointed out that when evaluating the effectiveness of ground improvement by measuring electrical resistivity, in cases where the salinity of the pore water is high and the electrical resistivity is low, such as in reclaimed land in coastal areas, it is unlikely that this method can be applied to determining the infiltration of chemical solutions (Non-Patent Document 2).

そこで本発明の主たる課題は、改良前後の電気比抵抗の計測によって、改良体の一軸圧縮強さを評価可能とした電気検層を用いた薬液注入工法による地盤改良効果の評価方法を提供することにある。 The main objective of the present invention is to provide a method for evaluating the effectiveness of ground improvement using a chemical injection method with electrical logging that makes it possible to evaluate the uniaxial compressive strength of the improved body by measuring the electrical resistivity before and after improvement.

第2の課題は、本発明に係る薬液注入工法による地盤改良効果の評価方法の適用範囲(間隙水の塩分濃度範囲)を明らかにすることにある。 The second objective is to clarify the scope of application (the range of salt concentration of pore water) of the method for evaluating the effect of ground improvement using the chemical injection method of the present invention.

上記課題を解決するために請求項1に係る本発明として、事前に、一方軸を一軸圧縮強さ(qu)とし、他方軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図を得ておくとともに、該相関図に基づいて、目標とする一軸圧縮強さ(quck)を確保し得る条件の前記改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)の閾値を設定しておき、
地盤改良前後にそれぞれ、地盤に縦方向に形成した貫入孔を利用して電気検層による電気比抵抗を計測し、改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)を求め、この電気比抵抗の比(Rimp/Runimp)が前記閾値より大きいか小さいかで、目標とする一軸圧縮強さ(quck)が確保されているかどうかを判断する薬液注入工法による地盤改良効果の評価方法であって、
記相関図は、地盤改良に使用するシリカ溶液の電気比抵抗特性を把握するために、水でシリカ溶液を希釈してシリカ濃度毎の電気比抵抗を測定して、シリカ濃度(SiO2)と電気比抵抗(Rc)との相関図を得る第1手順と、
未改良・改良地盤の電気比抵抗(Rs・Rimp)と間隙水・薬液の電気比抵抗(Rpw・Rc)との相関図を得る第2手順と、
前記第1手順で得たシリカ濃度(SiO2)と電気比抵抗(Rc)との相関図と、前記第2手順で得た未改良・改良地盤の電気比抵抗(Rs・Rimp)と間隙水・薬液の電気比抵抗(Rpw・Rc)との相関図とに基づいて、シリカ濃度(SiO2)と改良地盤の電気比抵抗(Rimp)との相関図を得る第3手順と、
目標とする一軸圧縮強さ(quck)に対応する薬液シリカ濃度を設定する目的で、室内にて作製した供試体を用いて、シリカ濃度(SiO2)と一軸圧縮強さ(qu)との相関図を得る第4手順と、
前記第3手順で得たシリカ濃度(SiO2)と改良地盤の電気比抵抗(Rimp)との相関図を整理して、一方軸を希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)とし、他方軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図を得る第5手順と、
前記第4手順で得たシリカ濃度(SiO2)と一軸圧縮強さ(qu)との相関図を整理して、一方軸を希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)とし、他方軸を一軸圧縮強さ(qu)とした相関図を得る第6手順と、
前記第5手順で得た相関図と、第6手順で得た相関図に基づいて、前記一方軸を一軸圧縮強さ(qu)とし、他方軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図を得る第7手順によって得るようにすることを特徴とする薬液注入工法による地盤改良効果の評価方法が提供される。
In order to solve the above problem, as the present invention according to claim 1, a correlation diagram is obtained in advance, in which one axis is the uniaxial compressive strength (qu) and the other axis is the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp), and a threshold value is set for the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp) under conditions that can ensure a target uniaxial compressive strength (quck),
A method for evaluating the effect of ground improvement using a liquid grouting method, comprising measuring electrical resistivity by electrical logging using a penetration hole formed vertically in the ground before and after ground improvement, determining the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp), and judging whether the target uniaxial compressive strength (quck) is achieved based on whether the electrical resistivity ratio (Rimp/Runimp) is greater than or less than the threshold value ,
The correlation diagram is obtained by: a first step of diluting a silica solution with water and measuring the electrical resistivity for each silica concentration in order to grasp the electrical resistivity characteristics of the silica solution used for ground improvement, and obtaining a correlation diagram between silica concentration (SiO 2 ) and electrical resistivity (Rc);
The second step is to obtain a correlation diagram between the electrical resistivity of unimproved and improved ground (Rs and Rimp) and the electrical resistivity of pore water and chemical solutions (Rpw and Rc).
a third step of obtaining a correlation diagram between silica concentration ( SiO2 ) and electrical resistivity (Rimp) of the improved ground based on the correlation diagram between silica concentration (SiO2) and electrical resistivity (Rc) obtained in the first step and the correlation diagram between the electrical resistivity (Rs·Rimp) of the unimproved and improved ground and the electrical resistivity (Rpw · Rc) of the pore water and chemical solution obtained in the second step;
A fourth step is to obtain a correlation diagram between silica concentration (SiO 2 ) and unconfined compressive strength (q u ) using a test specimen prepared indoors in order to set the liquid silica concentration corresponding to the target unconfined compressive strength (q u );
a fifth step in which the correlation diagram between the silica concentration ( SiO2 ) obtained in the third step and the electrical resistivity (Rimp) of the improved ground is arranged to obtain a correlation diagram in which one axis represents the ratio (c/co) of the silica concentration after dilution (c) to the desired silica concentration (co) and the other axis represents the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp);
a sixth step of arranging the correlation diagram between the silica concentration ( SiO2 ) and the unconfined compressive strength (qu) obtained in the fourth step to obtain a correlation diagram in which one axis represents the ratio (c/co) of the silica concentration after dilution (c) to the desired silica concentration (co) and the other axis represents the unconfined compressive strength (qu);
Based on the correlation diagram obtained in the fifth step and the correlation diagram obtained in the sixth step, a correlation diagram is obtained by a seventh step in which one axis is the uniaxial compressive strength (qu) and the other axis is the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp).

上記請求項1記載の発明では、薬液注入工法による地盤改良効果(一軸圧縮強さ)を評価するに当たって、事前に、一方軸を一軸圧縮強さ(qu)とし、他方軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図を得ておくとともに、該相関図に基づいて、目標とする一軸圧縮強さ(quck)を確保し得る条件の前記改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)の閾値を設定しておくようにする。具体的な前記相関図の求め方については下記第1手順~第7手順による。 In the invention described in claim 1, when evaluating the effect of ground improvement (uniaxial compressive strength) by the chemical grouting method, a correlation diagram is obtained in advance, with one axis being the uniaxial compressive strength (qu) and the other axis being the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp), and a threshold value is set for the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp) under conditions that can ensure the target uniaxial compressive strength (quck). The specific method of obtaining the correlation diagram is as follows: Steps 1 to 7 below .

そして、現地において、地盤改良前後にそれぞれ、地盤に縦方向に形成した貫入孔を利用して電気検層による電気比抵抗を計測し、改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)を求め、この電気比抵抗の比(Rimp/Runimp)が前記閾値より大きいか小さいかで、目標とする一軸圧縮強さ(quck)が確保されているかどうかを判断する。 Then, at the site, electrical resistivity is measured by electrical logging using a penetration hole drilled vertically in the ground before and after ground improvement, and the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp) is calculated. Whether or not the target uniaxial compressive strength (quck) has been achieved is determined based on whether this electrical resistivity ratio (Rimp/Runimp) is greater or smaller than the threshold value.

従って、改良前後の電気比抵抗の計測によって、改良体の一軸圧縮強さを評価することが可能になる。すなわち、従来は改良前後の電気比抵抗の比較により薬液が充填されているかどうかの定性的な評価であったが、本発明によれば、改良前後の電気比抵抗から簡単に改良後の一軸圧縮強さを数値で把握することが可能になり、改良効果を定量的に評価することが可能になる。 Therefore, by measuring the electrical resistivity before and after improvement, it becomes possible to evaluate the uniaxial compressive strength of the improved body. In other words, in the past, a qualitative assessment of whether or not the chemical solution was filled was made by comparing the electrical resistivity before and after improvement, but according to the present invention, it is possible to easily grasp the numerical value of the uniaxial compressive strength after improvement from the electrical resistivity before and after improvement, making it possible to quantitatively evaluate the improvement effect.

記相関図は、地盤改良に使用するシリカ溶液の電気比抵抗特性を把握するために、水でシリカ溶液を希釈してシリカ濃度毎の電気比抵抗を測定して、シリカ濃度(SiO2)と電気比抵抗(Rc)との相関図を得る第1手順と、
未改良・改良地盤の電気比抵抗(Rs・Rimp)と間隙水・薬液の電気比抵抗(Rpw・Rc)との相関図を得る第2手順と、
前記第1手順で得たシリカ濃度(SiO2)と電気比抵抗(Rc)との相関図と、前記第2手順で得た未改良・改良地盤の電気比抵抗(Rs・Rimp)と間隙水・薬液の電気比抵抗(Rpw・Rc)との相関図とに基づいて、シリカ濃度(SiO2)と改良地盤の電気比抵抗(Rimp)との相関図を得る第3手順と、
目標とする一軸圧縮強さ(quck)に対応する薬液シリカ濃度を設定する目的で、室内にて作製した供試体を用いて、シリカ濃度(SiO2)と一軸圧縮強さ(qu)との相関図を得る第4手順と、
前記第3手順で得たシリカ濃度(SiO2)と改良地盤の電気比抵抗(Rimp)との相関図を整理して、一方軸を希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)とし、他方軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図を得る第5手順と、
前記第4手順で得たシリカ濃度(SiO2)と一軸圧縮強さ(qu)との相関図を整理して、一方軸を希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)とし、他方軸を一軸圧縮強さ(qu)とした相関図を得る第6手順と、
前記第5手順で得た相関図と、第6手順で得た相関図に基づいて、前記一方軸を一軸圧縮強さ(qu)とし、他方軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図を得る第7手順とによって得るようにする
The correlation diagram is obtained by: a first step of diluting a silica solution with water and measuring the electrical resistivity for each silica concentration in order to grasp the electrical resistivity characteristics of the silica solution used for ground improvement, and obtaining a correlation diagram between silica concentration (SiO 2 ) and electrical resistivity (Rc);
The second step is to obtain a correlation diagram between the electrical resistivity of unimproved and improved ground (Rs and Rimp) and the electrical resistivity of pore water and chemical solutions (Rpw and Rc).
a third step of obtaining a correlation diagram between silica concentration ( SiO2 ) and electrical resistivity (Rimp) of the improved ground based on the correlation diagram between silica concentration (SiO2) and electrical resistivity (Rc) obtained in the first step and the correlation diagram between the electrical resistivity (Rs·Rimp) of the unimproved and improved ground and the electrical resistivity (Rpw · Rc) of the pore water and chemical solution obtained in the second step;
A fourth step is to obtain a correlation diagram between silica concentration (SiO 2 ) and unconfined compressive strength (q u ) using a test specimen prepared indoors in order to set the liquid silica concentration corresponding to the target unconfined compressive strength (q u );
a fifth step in which the correlation diagram between the silica concentration ( SiO2 ) obtained in the third step and the electrical resistivity (Rimp) of the improved ground is arranged to obtain a correlation diagram in which one axis represents the ratio (c/co) of the silica concentration after dilution (c) to the desired silica concentration (co) and the other axis represents the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp);
a sixth step of arranging the correlation diagram between the silica concentration ( SiO2 ) and the unconfined compressive strength (qu) obtained in the fourth step to obtain a correlation diagram in which one axis represents the ratio (c/co) of the silica concentration after dilution (c) to the desired silica concentration (co) and the other axis represents the unconfined compressive strength (qu);
Based on the correlation diagram obtained in the fifth step and the correlation diagram obtained in the sixth step, a correlation diagram is obtained in which one axis is the uniaxial compressive strength (qu) and the other axis is the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp) .

請求項に係る本発明として、間隙水の塩分濃度が5,000~10,000ppmまでの地盤を地盤改良対象とする請求項1記載の薬液注入工法による地盤改良効果の評価方法が提供される。 The present invention according to claim 2 provides a method for evaluating the effect of ground improvement by the liquid grouting method according to claim 1 , for improving ground having a salinity concentration of pore water of 5,000 to 10,000 ppm.

上記請求項記載の発明は、本発明に係る薬液注入工法による地盤改良効果の評価方法の適用範囲(間隙水の塩分濃度範囲)を明らかにしたものである。電気比抵抗法による評価が不向きとされていた沿岸地帯などにおいても、その適用範囲を明らかにすることによって信頼のおける評価が可能になる。 The invention described in claim 2 clarifies the application range (pore water salinity range) of the method for evaluating the effect of ground improvement using the chemical grouting method according to the present invention. By clarifying the application range, reliable evaluation is possible even in coastal areas where evaluation using the electrical resistivity method has been considered unsuitable.

請求項に係る本発明として、一方軸を一軸圧縮強さ(qu)とし、他方軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした前記相関図に代えて、一軸圧縮強さ(qu)と液状化強度比(RL)との換算式又は一軸圧縮強さ(qu)と粘着力(c)との換算式に基づいて修正した、一方軸を液状化強度比(RL)又は粘着力(c)とし、他方軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図を用いる請求項1、2いずれかに記載の薬液注入工法による地盤改良効果の評価方法が提供される。 As the present invention of claim 3 , there is provided a method for evaluating the effect of ground improvement using the chemical injection method described in either claim 1 or 2, in which, instead of the correlation diagram in which one axis is the uniaxial compressive strength (qu) and the other axis is the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp), a correlation diagram in which one axis is the liquefaction resistance ratio (RL) or adhesion (c) and the other axis is the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground, modified based on the conversion formula between the uniaxial compressive strength (qu) and the liquefaction resistance ratio (RL) or the conversion formula between the uniaxial compressive strength (qu) and the adhesion (c), is used.

上記請求項記載の発明は、一軸圧縮強さ(qu)と液状化強度比(RL)とは一定の換算式によって変換が可能であること、一軸圧縮強さ(qu)と粘着力(c)とは一定の換算式によって変換が可能であることに鑑み、前記一方軸を一軸圧縮強さ(qu)とし、他方軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図に代えて、前記一方軸の一軸圧縮強さ(qu)を液状化強度比(RL)又は粘着力(c)とした相関図に基づいて、地盤改良効果を判定するものである。 The invention described in claim 3 above takes into consideration that the uniaxial compressive strength (qu) and the liquefaction resistance ratio (RL) can be converted using a certain conversion formula, and that the uniaxial compressive strength (qu) and the cohesion (c) can be converted using a certain conversion formula, and instead of a correlation diagram in which one axis is the uniaxial compressive strength (qu) and the other axis is the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp), the effect of ground improvement is judged based on a correlation diagram in which the uniaxial compressive strength (qu) on one axis is the liquefaction resistance ratio (RL) or the cohesion (c).

請求項に係る本発明として、一方軸を一軸圧縮強さ(qu)とし、他方軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした前記相関図に代えて、電機比抵抗(R)と導電率(σ)との換算式(R(Ω・m)=1/σ(S/m))に基づいて修正した、一方軸を一軸圧縮強さ(qu)とし、他方軸を未改良地盤の導電率(σunimp)と改良地盤の導電率(σimp)との比(σunimp/σimp)とした相関図を用いる請求項1、2いずれかに記載の薬液注入工法による地盤改良効果の評価方法が提供される。 As the present invention of claim 4 , there is provided a method for evaluating the effect of ground improvement using the chemical injection method described in either claim 1 or 2, which uses a correlation diagram in which one axis is the uniaxial compressive strength (qu) and the other axis is the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp), modified based on the conversion formula for electrical resistivity (R) and electrical conductivity (σ) (R(Ω·m)=1/σ(S/m)). The correlation diagram has one axis being the uniaxial compressive strength (qu) and the other axis being the ratio (σunimp/σimp) of the electrical conductivity of the unimproved ground (σunimp) to the electrical conductivity of the improved ground (σimp).

上記請求項記載の発明は、電気比抵抗(R)と導電率(σ)とは換算式(R=1/σ)によって変換が可能であることに鑑み、前記一方軸を一軸圧縮強さ(qu)とし、他方軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図に代えて、前記他方軸の改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)を、未改良地盤の導電率(σunimp)と改良地盤の導電率(σimp)との比(σunimp/σimp)とした相関図に基づいて、地盤改良効果を判定するものである。 The invention described in claim 4 above takes into consideration that electrical resistivity (R) and electrical conductivity (σ) can be converted using a conversion formula (R = 1/σ), and instead of a correlation diagram in which one axis is the uniaxial compressive strength (qu) and the other axis is the ratio (Rimp/Runimp) of the electrical resistivity of improved ground (Rimp) to the electrical resistivity of unimproved ground (Runimp), the effect of ground improvement is judged based on a correlation diagram in which the ratio (Rimp/Runimp) of the electrical resistivity of improved ground (Rimp) to the electrical resistivity of unimproved ground (Runimp) on the other axis is the ratio (σunimp) of the electrical conductivity of unimproved ground (σunimp) to the electrical conductivity of improved ground (σimp) (σunimp/σimp).

以上詳説のとおり本発明によれば、改良前後の電気比抵抗の計測によって、改良体の一軸圧縮強さを評価可能とした電気検層を用いた薬液注入工法による地盤改良効果の評価方法を提供することが可能になる。 As explained above in detail, the present invention makes it possible to provide a method for evaluating the effect of ground improvement using a chemical injection method with electrical logging that can evaluate the uniaxial compressive strength of the improved body by measuring the electrical resistivity before and after improvement.

また、本発明に係る薬液注入工法による地盤改良効果の評価方法の適用範囲(間隙水の塩分濃度範囲)が明らかになる。 In addition, the scope of application of the method for evaluating the effect of ground improvement using the chemical injection method of the present invention (range of salt concentration of pore water) will be clarified.

小型土層実験で使用する小型円筒土槽の縦断面図である。This is a vertical cross-sectional view of a small cylindrical soil tank used in small soil layer experiments. 使用砂の粒径加積曲線である。This is the particle size accumulation curve of the sand used. 電気比抵抗測定位置を示す平面図である。FIG. 2 is a plan view showing the positions at which electrical resistivity measurements are performed. シリカ濃度(SiO2)と電気比抵抗(Rc)との関係を示すグラフである。1 is a graph showing the relationship between silica concentration (SiO 2 ) and electrical resistivity (Rc). 珪砂7号及び遠州珪砂の未改良地盤、改良地盤の電気比抵抗と間隙水塩分濃度との関係を示すグラフである。This is a graph showing the relationship between electrical resistivity and pore water salinity of unimproved and improved ground using silica sand No. 7 and Enshu silica sand. 未改良・改良地盤の電気比抵抗と間隙水・薬液の電気比抵抗の関係を示すグラフである。This is a graph showing the relationship between the electrical resistivity of unimproved and improved ground and the electrical resistivity of interstitial water and chemical solutions. 改良地盤の電気比抵抗と薬液シリカ濃度との関係を示すグラフである。1 is a graph showing the relationship between the electrical resistivity of improved ground and the silica concentration in the chemical solution. 珪砂7号(瀬戸産)の一軸圧縮強さとシリカ濃度との関係を示すグラフである。1 is a graph showing the relationship between the unconfined compressive strength and silica concentration of silica sand No. 7 (produced in Seto). 現場実証実験で使用するプローブの貫入孔への圧入装置の側面図である。FIG. 13 is a side view of a device for pressing a probe into a penetration hole used in a field demonstration experiment. 原位置土の土質柱状図である。This is a soil column diagram of the in-situ soil. 原位置土の粒径加積曲線である・This is the particle size accumulation curve of the in-situ soil. 薬液改良体の平面図である。FIG. 2 is a plan view of the chemical solution improver. 薬液改良体の断面図である。FIG. 2 is a cross-sectional view of a chemical solution improver. 改良体Aのqu(一軸圧縮強さ)、Nd値(小型動的コーン貫入試験より得られたN値と等価なNd値)、R(押込型マイクロ電気検層(電極間隔2.5cm)より得られた電気比抵抗)、Rimp/Runimp(改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比)である。The values are qu (uniaxial compressive strength), Nd value ( Nd value equivalent to the N value obtained from a small dynamic cone penetration test), R (electrical resistivity obtained from a push-type micro-electrical logging (electrode spacing 2.5 cm)), and Rimp/Runimp (the ratio of electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp)) of the improved body A. 改良体Bのqu(一軸圧縮強さ)、Nd値(小型動的コーン貫入試験より得られたN値と等価なNd値)、R(押込型マイクロ電気検層(電極間隔2.5cm)より得られた電気比抵抗)、Rimp/Runimp(改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比)である。The values are qu (uniaxial compressive strength), Nd value ( Nd value equivalent to the N value obtained from a small dynamic cone penetration test), R (electrical resistivity obtained from a push-type micro-electrical logging (electrode spacing 2.5 cm)), and Rimp/Runimp (the ratio of electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp)) of the improved body B. 未改良・改良地盤と間隙水・薬液の電気比抵抗の関係を示すグラフである。This is a graph showing the relationship between the electrical resistivity of unimproved and improved ground and the interstitial water and chemical solution. 改良地盤の電気比抵抗と薬液シリカ濃度との関係を示すグラフである。1 is a graph showing the relationship between the electrical resistivity of improved ground and the silica concentration in the chemical solution. 配合試験により得られた一軸圧縮強さとシリカ濃度との関係を示すグラフである。1 is a graph showing the relationship between unconfined compressive strength and silica concentration obtained by a blending test. 改良体Aの希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)と、改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)との関係を示すグラフである。This is a graph showing the relationship between the ratio (c/co) of the silica concentration (c) after dilution of improved body A to the intended silica concentration (co) and the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity (Runimp) of the unimproved ground. 改良体Bの希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)と、改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)との関係を示すグラフである。This is a graph showing the relationship between the ratio (c/co) of the silica concentration (c) after dilution of improved body B to the intended silica concentration (co) and the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity (Runimp) of the unimproved ground. 改良体A、Bの希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)と一軸圧縮強さ(qu)との関係を示すグラフである。1 is a graph showing the relationship between the ratio (c/co) of the silica concentration after dilution (c) to the intended silica concentration (co) for improved bodies A and B, and the unconfined compressive strength (qu). 一軸圧縮強さquと、改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)との関係を示すグラフである。This is a graph showing the relationship between the unconfined compressive strength qu and the ratio (Rimp/Runimp) of the electrical resistivity of improved ground (Rimp) to the electrical resistivity of unimproved ground (Runimp). 一軸圧縮強さ(qu)と液状化強度比(RL)との間の相関式を示す図である。FIG. 1 shows the correlation between unconfined compressive strength (qu) and liquefaction strength ratio (RL). 一軸圧縮強さ(qu)と粘着力(c)との間の相関式を示す図である。FIG. 1 shows the correlation between unconfined compressive strength (qu) and adhesive strength (c).

以下、本発明の実施の形態について図面を参照しながら詳述する。 The following describes in detail the embodiments of the present invention with reference to the drawings.

本発明は、埋立地等の軟弱地盤の地盤強化のため、水ガラス(珪酸ナトリウム)などからなる薬液を地盤に注入する薬液注入工法による地盤改良効果の評価方法であり、具体的には以下の手順によるものである。 The present invention is a method for evaluating the effect of ground improvement using a chemical injection method in which a chemical solution made of water glass (sodium silicate) or the like is injected into the ground to strengthen soft ground such as reclaimed land, and specifically, the method involves the following steps.

事前に、縦軸を一軸圧縮強さ(qu)とし、横軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図を得ておくとともに、該相関図に基づいて、目標とする一軸圧縮強さ(quck)を確保し得る条件の前記改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)の閾値を設定しておき、
地盤改良前後にそれぞれ、地盤に縦方向に形成した貫入孔を利用して電気検層による電気比抵抗を計測し、改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)を求め、この電気比抵抗の比(Rimp/Runimp)が前記閾値より大きいか小さいかで、目標とする一軸圧縮強さ(quck)が確保されているかどうかを判断する。
A correlation diagram is prepared in advance, with the vertical axis representing the uniaxial compressive strength (qu) and the horizontal axis representing the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp), and a threshold value is set for the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp) under conditions that can ensure the target uniaxial compressive strength (quck) based on the correlation diagram.
Before and after ground improvement, electrical resistivity is measured by electrical logging using a penetration hole formed vertically in the ground, and the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp) is determined. Depending on whether this electrical resistivity ratio (Rimp/Runimp) is greater or smaller than the threshold value, it is determined whether the target uniaxial compressive strength (quck) has been secured.

すなわち、本発明では薬液注入工法による地盤改良に先立って、改良地盤の原位置土を用いた室内実験により、縦軸を一軸圧縮強さ(qu)とし、横軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図(以下、一軸圧縮強さ相関図ともいう。)を得ておくようにする。この際、前記一軸圧縮強さ相関図に基づいて、目標とする一軸圧縮強さ(quck)を確保し得る条件の前記改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)の閾値を設定しておくようにする。 In other words, in this invention, prior to ground improvement using the chemical injection method, a correlation diagram (hereinafter also referred to as a uniaxial compressive strength correlation diagram) is obtained by performing an indoor experiment using in-situ soil from the improved ground, with the vertical axis representing the uniaxial compressive strength (qu) and the horizontal axis representing the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp). At this time, based on the uniaxial compressive strength correlation diagram, a threshold value is set for the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp) under conditions that can ensure the target uniaxial compressive strength (quck).

そして、地盤改良前に地盤に形成した貫入孔に電気検層プローグを挿入して所定の深さ毎に電気比抵抗(Runimp)を計測する。また、地盤改良後にも地盤に形成した貫入孔に電気検層プローグを挿入して所定の深さ毎に電気比抵抗(Rimp)を計測する。 An electrical logging probe is then inserted into the penetration hole formed in the ground before ground improvement to measure electrical resistivity (Rimp) at each specified depth. Also, after ground improvement, an electrical logging probe is inserted into the penetration hole formed in the ground to measure electrical resistivity (Rimp) at each specified depth.

あとは、地盤改良前後の電気比抵抗の比(Rimp/Runimp)を求め、この電気抵抗の比(Rimp/Runimp)が前記閾値より大きいか小さいかで、目標とする一軸圧縮強さ(quck)が確保されているかどうかを判断することが可能になる。なお、目標とする一軸圧縮強さ(quck)が確保されているかどうかだけではなく、実際に地盤改良前後の電気比抵抗の比(Rimp/Runimp)を前記一軸圧縮強さ相関図の横軸に当て嵌め、相関線との交点から改良後の地盤の一軸圧縮強さquの数値を具体的に知ることも可能になる。 Next, it is possible to determine whether the target uniaxial compressive strength (quck) has been secured by determining the ratio of electrical resistivity (Rimp/Runimp) before and after ground improvement and whether this ratio of electrical resistivity (Rimp/Runimp) is greater than or less than the threshold value. In addition to determining whether the target uniaxial compressive strength (quck) has been secured, it is also possible to actually fit the ratio of electrical resistivity (Rimp/Runimp) before and after ground improvement onto the horizontal axis of the uniaxial compressive strength correlation diagram and obtain the specific value of the uniaxial compressive strength qu of the improved ground from the intersection with the correlation line.

次に、前記一軸圧縮強さ相関図を得るための手順について詳述する。 Next, we will explain in detail the procedure for obtaining the uniaxial compressive strength correlation diagram.

(第1手順)
先ず最初に、地盤改良に使用するシリカ溶液の電気比抵抗特性を把握するために、水でシリカ溶液を希釈してシリカ濃度毎の電気比抵抗を測定して、シリカ濃度(SiO2)と電気比抵抗(Rc)との相関図を得るようにする。すなわち、地盤改良のために地盤に注入する水ガラス(シリカ溶液)をどれだけ注入すると、どれぐらい電気比抵抗が低下するのかを定量的に把握する。この相関図の例が後述の図4に示したものである。
(First Step)
First, in order to understand the electrical resistivity characteristics of the silica solution used for ground improvement, the silica solution is diluted with water and the electrical resistivity is measured for each silica concentration, and a correlation diagram between silica concentration ( SiO2 ) and electrical resistivity (Rc) is obtained. In other words, the amount of water glass (silica solution) injected into the ground for ground improvement is quantitatively understood to what extent the electrical resistivity decreases. An example of this correlation diagram is shown in Figure 4 below.

(第2手順)
未改良・改良地盤の電気比抵抗(Rs・Rimp)と間隙水・薬液の電気比抵抗(Rpw・Rc)との相関図を得るようにする。すなわち、未改良・改良地盤の電気比抵抗(Rs・Rimp)は、間隙水・薬液の電気比抵抗(Rpw・Rc)に支配され、未改良・改良地盤の電気比抵抗(Rs・Rimp)と、間隙水・薬液の電気比抵抗(Rpw・Rc)との関係は、極めて相関性が高いものとなっている。この相関図の例が、後述の図6に示したものである。
(Second Procedure)
A correlation diagram is obtained between the electrical resistivity (Rs/Rimp) of unimproved and improved ground and the electrical resistivity (Rpw/Rc) of pore water and chemical solutions. In other words, the electrical resistivity (Rs/Rimp) of unimproved and improved ground is governed by the electrical resistivity (Rpw/Rc) of pore water and chemical solutions, and the relationship between the electrical resistivity (Rs/Rimp) of unimproved and improved ground and the electrical resistivity (Rpw/Rc) of pore water and chemical solutions is extremely high. An example of this correlation diagram is shown in Figure 6 below.

(第3手順)
前記第1手順で得たシリカ濃度(SiO2)と電気比抵抗(Rc)との相関図と、前記第2手順で得た未改良・改良地盤の電気比抵抗(Rs・Rimp)と間隙水・薬液の電気比抵抗(Rpw・Rc)との相関図とに基づいて、シリカ濃度(SiO2)と改良地盤の電気比抵抗(Rimp)との相関図を得るようにする。すなわち、前記第1手順で得たシリカ濃度(SiO2)と電気比抵抗(Rc)との相関図のシリカ濃度(SiO2)はそのままにして、電気比抵抗(Rc)を前記第2手順で得た未改良・改良地盤の電気比抵抗(Rs・Rimp)と間隙水・薬液の電気比抵抗(Rpw・Rc)との相関図とに基づいて、シリカ濃度(SiO2)と改良地盤の電気比抵抗(Rimp)との相関図を用いて変換し、シリカ濃度(SiO2)と改良地盤の電気比抵抗(Rimp)との相関図を得るようにする。この相関図が目的の一軸圧縮強さ相関図を得るために必要となる、一方側の相関図データ(電気比抵抗データ)となる。この相関図の例が後述の図7に示したものである。
(Third Procedure)
A correlation diagram between silica concentration ( SiO2 ) and electrical resistivity (Rc) obtained in the first step and a correlation diagram between the electrical resistivity (Rs/Rimp) of unimproved and improved ground and the electrical resistivity (Rpw/Rc) of pore water and chemical solution obtained in the second step is used to obtain a correlation diagram between silica concentration ( SiO2 ) and electrical resistivity (Rimp) of improved ground. That is, the silica concentration (SiO 2 ) in the correlation diagram between silica concentration (SiO 2 ) and electrical resistivity (Rc) obtained in the first step is left as it is, and the electrical resistivity (Rc) is converted using the correlation diagram between silica concentration (SiO 2 ) and electrical resistivity (Rimp) of the improved ground based on the correlation diagram between the electrical resistivity (Rs・Rimp) of the unimproved and improved ground and the electrical resistivity (Rpw・Rc) of the pore water and chemical solution obtained in the second step, to obtain a correlation diagram between silica concentration (SiO 2 ) and electrical resistivity (Rimp) of the improved ground. This correlation diagram becomes one side of the correlation diagram data (electrical resistivity data) required to obtain the desired correlation diagram of uniaxial compressive strength. An example of this correlation diagram is shown in Figure 7 described later.

(第4手順)
次に、目標とする一軸圧縮強さ(quck)に対応する薬液シリカ濃度を設定する目的で、室内にて作製した供試体を用いて、シリカ濃度(SiO2)と一軸圧縮強さ(qu)との相関図を得るようにする。すなわち、前記第1手順で得たシリカ濃度(SiO2)と電気比抵抗(Rc)との相関図に対応して、シリカ濃度(SiO2)と一軸圧縮強さ(qu)との相関図を得るようにする。この相関図の例が、後述の図8に示したものである。
(Fourth Procedure)
Next, in order to set the silica concentration of the chemical solution corresponding to the target unconfined compressive strength (quck), a correlation diagram between the silica concentration ( SiO2 ) and the unconfined compressive strength (qu) is obtained using a specimen prepared indoors. That is, a correlation diagram between the silica concentration ( SiO2 ) and the unconfined compressive strength (qu) is obtained in correspondence with the correlation diagram between the silica concentration ( SiO2 ) and the electrical resistivity (Rc) obtained in the first step. An example of this correlation diagram is shown in Figure 8, which will be described later.

(第5手順)
前記第3手順で得たシリカ濃度(SiO2)と改良地盤の電気比抵抗(Rimp)との相関図を整理して、横軸を希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)とし、縦軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図を得るようにする。
(Fifth Step)
The correlation diagram between the silica concentration ( SiO2 ) obtained in the third step and the electrical resistivity (Rimp) of the improved ground is rearranged to obtain a correlation diagram with the horizontal axis representing the ratio (c/co) of the silica concentration after dilution (c) to the intended silica concentration (co) and the vertical axis representing the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp).

すなわち、最終的に得たい縦軸を一軸圧縮強さ(qu)とし、横軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図を得るために、前記第3手順で得たシリカ濃度(SiO2)と改良地盤の電気比抵抗(Rimp)との相関図を変換する。シリカ濃度(SiO2)は絶対値としての濃度なので、相対的数値として一般化する。つまり、横軸を希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)とする。これにより、所期濃度の数値に関係なく横軸のシリカ濃度のパラメータを一般化することができる。また、縦軸の改良地盤の電気比抵抗(Rimp)を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とすることによりパラメータの一般化を図る。この変換した相関図の例が、後述の図19及び図20に示したものである。 That is, in order to obtain a correlation diagram with the uniaxial compressive strength (qu) as the vertical axis and the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp) as the horizontal axis, the correlation diagram between the silica concentration (SiO 2 ) and the electrical resistivity of the improved ground obtained in the third step is converted. Since the silica concentration (SiO 2 ) is an absolute concentration, it is generalized as a relative value. In other words, the horizontal axis is the ratio (c/co) of the silica concentration after dilution (c) to the desired silica concentration (co). This makes it possible to generalize the silica concentration parameter on the horizontal axis regardless of the desired concentration value. In addition, the electrical resistivity (Rimp) of the improved ground on the vertical axis is set to the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground, thereby generalizing the parameter. Examples of this converted correlation diagram are shown in Figures 19 and 20 described later.

(第6手順)
前記第4手順で得たシリカ濃度(SiO2)と一軸圧縮強さ(qu)との相関図を整理して、横軸を希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)とし、縦軸を一軸圧縮強さ(qu)とした相関図を得るようにする。
(Sixth Step)
The correlation diagram between silica concentration ( SiO2 ) and unconfined compressive strength (qu) obtained in the fourth step above is rearranged to obtain a correlation diagram with the ratio (c/co) of the silica concentration after dilution (c) to the intended silica concentration (co) on the horizontal axis and the unconfined compressive strength (qu) on the vertical axis.

すなわち、前記第4手順で得たシリカ濃度(SiO2)と一軸圧縮強さ(qu)との相関図を変換する。シリカ濃度(SiO2)は絶対値として濃度なので、相対的数値として一般化する。つまり、横軸を希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)とする。これにより、所期濃度の数値に関係なく横軸のシリカ濃度のパラメータを一般化することができる。この変換した相関図の例が、図21(A)及び図21(B)に示したものである。 That is, the correlation diagram between silica concentration ( SiO2 ) and unconfined compressive strength (qu) obtained in the fourth step is converted. Since silica concentration ( SiO2 ) is an absolute value, it is generalized as a relative value. In other words, the horizontal axis is the ratio (c/co) of the silica concentration after dilution (c) to the intended silica concentration (co). This makes it possible to generalize the silica concentration parameter on the horizontal axis regardless of the intended concentration value. Examples of this converted correlation diagram are shown in Figures 21(A) and 21(B).

(第7手順)
前記第5手順で得た相関図と、第6手順で得た相関図に基づいて、前記一軸圧縮強さ相関図を得るようにする。
(Seventh Step)
The uniaxial compressive strength correlation diagram is obtained based on the correlation diagram obtained in the fifth step and the correlation diagram obtained in the sixth step.

すなわち、前記第5手順で横軸を希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)とした場合の改良地盤の電気比抵抗(Rimp)を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)との相関図が得られ、前記第6手順で同じく横軸を希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)とした場合の一軸圧縮強さ(qu)との相関図が得られている。 In other words, in the fifth step, a correlation diagram was obtained between the electrical resistivity (Rimp) of the improved ground when the horizontal axis is the ratio (c/co) of the silica concentration after dilution (c) to the intended silica concentration (co) and the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp), and in the sixth step, a correlation diagram was obtained between the unconfined compressive strength (qu) when the horizontal axis is the ratio (c/co) of the silica concentration after dilution (c) to the intended silica concentration (co).

これらの相関図は、横軸が希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)で共通しているため、縦軸同士の関係で相関図を描くことが可能になる。このグラフが、最終的に得たい前述の一軸圧縮強さ相関図である。この相関図の例が図22に示したものである。 These correlation diagrams share the common horizontal axis, which is the ratio (c/co) of the silica concentration after dilution (c) to the desired silica concentration (co), so it is possible to draw a correlation diagram using the relationship between the vertical axes. This graph is the aforementioned uniaxial compressive strength correlation diagram that we ultimately want to obtain. An example of this correlation diagram is shown in Figure 22.

前記一軸圧縮強さ相関図において、事前に目標とする一軸圧縮強さ(quck)を確保し得る条件の前記改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)の閾値を設定しておけば、改良前後に電気比抵抗の計測を行って、改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)を求め、この電気比抵抗の比(Rimp/Runimp)が前記閾値より大きいか小さいかで、目標とする一軸圧縮強さ(quck)が確保されているかどうかを判断することができる。 In the uniaxial compressive strength correlation diagram, if a threshold value for the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp) that satisfies the conditions for securing the target uniaxial compressive strength (quck) is set in advance, the electrical resistivity can be measured before and after improvement to determine the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp), and whether the target uniaxial compressive strength (quck) has been secured can be determined based on whether this electrical resistivity ratio (Rimp/Runimp) is greater or smaller than the threshold value.

ところで、本発明方法は、改良前後で改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)とが明確に異なることが条件となる。従って、この条件を満たす地盤は、後述の実験で明らかにされるように、間隙水の塩分濃度が5,000~10,000ppmまでの地盤である。従って、本発明法は間隙水の塩分濃度が5,000~10,000ppmまでの地盤を対象とするのがよい。 The method of the present invention requires that the electrical resistivity of the improved ground (Rimp) is clearly different from the electrical resistivity of the unimproved ground (Runimp) before and after improvement. Therefore, as will be shown in the experiment described below, ground that meets this condition is ground with a salinity of the pore water of 5,000 to 10,000 ppm. Therefore, the method of the present invention should be applied to ground with a salinity of the pore water of 5,000 to 10,000 ppm.

1.小型土槽実験
まず、改良砂の電気比抵抗特性と本手法による適用範囲を明らかにする目的のためにで小型土槽実験を行った。
1. Small-scale soil tank experiment First, a small-scale soil tank experiment was conducted to clarify the electrical resistivity characteristics of the improved sand and the range of application of this method.

(1) 実験概要
本実験は、間隙水の塩分濃度(電気比抵抗)が地盤の比抵抗に及ぼす影響を確認し、改良前後の比抵抗変化から改良域の判別が可能であるか検証する。実験は、図1に示す小型円筒土槽を用い、塩分濃度の異なる間隙水にて作製した未改良地盤と同地盤に特殊シリカ液を注入して改良した薬液改良地盤を作製し、各地盤の電気比抵抗を測定した。
(1) Experimental overview This experiment was conducted to confirm the effect of the salinity (electrical resistivity) of pore water on the resistivity of the ground, and to verify whether it is possible to distinguish improved areas from the change in resistivity before and after improvement. The experiment was conducted using a small cylindrical soil tank as shown in Figure 1. Unimproved ground was prepared using pore water with different salinity concentrations, and the same ground was improved by injecting a special silica liquid into the same ground to prepare chemically improved ground, and the electrical resistivity of each ground was measured.

(2) 実験方法
未改良地盤の作製は、土槽内に所定の密度となるよう乾燥砂を空中落下法により充した後、土槽下部より炭酸ガスを注入して間隙中の空気を炭酸ガスに置換する。その後、土槽下部より所定の塩分濃度の脱気水を限界動水勾配以下の水頭差で浸透させた。また、改良地盤は、未改良地盤を作製後、土槽下部より所定のシリカ濃度の特殊シリカ液を浸透注入して作製した。実験に使用した砂は、珪砂7号(瀬戸産)および遠州珪砂である。使用砂の物理特性および粒径加積曲線を下表1および図2に示し、土槽地盤の作製条件を下表2に示す。

Figure 0007696563000001
Figure 0007696563000002
(2) Experimental method Unimproved ground was prepared by filling a soil tank with dry sand using the air-drop method to a specified density, and then injecting carbon dioxide gas from the bottom of the soil tank to replace the air in the gaps with carbon dioxide gas. After that, deaerated water with a specified salt concentration was allowed to infiltrate from the bottom of the soil tank at a head difference below the critical hydraulic gradient. Improved ground was prepared by injecting a special silica liquid with a specified silica concentration into the bottom of the soil tank after the unimproved ground was prepared. The sands used in the experiment were silica sand No. 7 (from Seto) and Enshu silica sand. The physical properties and particle size accumulation curves of the sands used are shown in Table 1 and Figure 2 below, and the conditions for preparing the soil tank ground are shown in Table 2 below.
Figure 0007696563000001
Figure 0007696563000002

電気比抵抗の測定は、電気検層プローブを用いた。同プローブは点電極(四極法)の電極配置にて電極間隔は25mmである。また、既往の円周状に配置した電極では電極径に対する測定孔径の比が、測定される電気比抵抗へ与える影響が極めて大きいことから、同影響の無い点電極を採用している。 An electrical logging probe was used to measure the electrical resistivity. The probe has a point electrode (four-pole method) arrangement with an electrode spacing of 25 mm. Furthermore, with previous circularly arranged electrodes, the ratio of the measurement hole diameter to the electrode diameter has a significant effect on the measured electrical resistivity, so a point electrode was used that does not have this effect.

測定は、図3に示す平面位置にてプローブ下端深度が地表面から14cm,15cm,16cmおよび17cm深度にて実施した。したがって、1土槽あたりの測定ポイント数は、未改良地盤が20ポイント、改良地盤は8ポイントとなる。改良地盤については比抵抗測定後、内径75mm×高150mmのシンウォールライナーを改良地盤に押込み採取した試料について一軸圧縮試験、シリカ含有量試験を実施した。 Measurements were carried out at the plan position shown in Figure 3, with the probe bottom end at depths of 14cm, 15cm, 16cm and 17cm from the ground surface. Therefore, the number of measurement points per soil tank was 20 for unimproved ground and 8 for improved ground. After resistivity measurements were taken for the improved ground, a thin wall liner with an inner diameter of 75mm and height of 150mm was pressed into the improved ground to collect samples, which were then used for uniaxial compression tests and silica content tests.

(3) 特殊シリカ液の電気比抵抗
実験に際し、特殊シリカ液の電気比抵抗特性を把握するため、水で薬液を希釈して薬液シリカ濃度毎の電気比抵抗を測定した。実験に使用した特殊シリカ液の電気比抵抗と薬液シリカ濃度の関係を図4に示す。同電気比抵抗はシリカ濃度が1.5wt%より低くなると急激に増加するが、2.0wt%を超えるとシリカ濃度の増加により電気比抵抗が低くなるが0.4~1.3Ω・mの範囲にある。
(3) Electrical resistivity of special silica liquid In order to understand the electrical resistivity characteristics of the special silica liquid during the experiment, the liquid was diluted with water and the electrical resistivity was measured for each silica concentration in the liquid. The relationship between the electrical resistivity of the special silica liquid used in the experiment and the silica concentration in the liquid is shown in Figure 4. The electrical resistivity increases sharply when the silica concentration is lower than 1.5wt%, but when it exceeds 2.0wt%, the electrical resistivity decreases due to the increase in silica concentration, but remains in the range of 0.4 to 1.3Ω・m.

(4) 実験結果
図5に珪砂7号(瀬戸産)および遠州珪砂の未改良地盤、改良地盤の電気比抵抗と間隙水塩分濃度の関係を示す。図6に未改良、改良地盤の電気比抵抗Runimp、Rimpと間隙水、薬液の電気比抵抗Rpw、Rcの関係を示す。電気比抵抗は、電極間隔25mmの測定結果にて図3に示す各測定ポイントの平均値としている。測定した電気比抵抗の変動係数は、珪砂7号(瀬戸産)にて未改良:0.04 程度、改良:0.02程度、遠州珪砂にて未改良:0.06程度、改良:0.02程度とばらつきは少ない。
(4) Experimental results Figure 5 shows the relationship between electrical resistivity and pore water salinity for unimproved and improved ground using silica sand No. 7 (from Seto) and Enshu silica sand. Figure 6 shows the relationship between the electrical resistivity Runimp and Rimp of the unimproved and improved ground and the electrical resistivity Rpw and Rc of the pore water and chemical solution. The electrical resistivity is the average value of each measurement point shown in Figure 3, measured with an electrode spacing of 25 mm. The coefficient of variation of the measured electrical resistivity was small, with silica sand No. 7 (from Seto) unimproved: approximately 0.04, improved: approximately 0.02, and Enshu silica sand unimproved: approximately 0.06, improved: approximately 0.02.

未改良地盤、改良地盤の電気比抵抗は、間隙水、薬液の電気比抵抗に支配され、未改良地盤、改良地盤の電気比抵抗と間隙水、薬液の電気比抵抗との関係は、極めて相関性が高い。また、同図より、未改良地盤では、間隙水の塩分濃度が高くなるにつれ比抵抗が小さくなる。 The electrical resistivity of unimproved and improved ground is governed by the electrical resistivity of the pore water and chemical solutions, and there is an extremely high correlation between the electrical resistivity of unimproved and improved ground and the electrical resistivity of the pore water and chemical solutions. The figure also shows that in unimproved ground, the resistivity decreases as the salinity of the pore water increases.

一方、改良地盤では、間隙水の塩分濃度に関わらずほぼ一定となる。未改良地盤と改良地盤の電気比抵抗は、間隙水の塩分濃度が10,000ppm程度で同程度となり、同濃度を超えると間隙水の電気比抵抗は薬液の比抵抗より小さくなる。 On the other hand, in improved ground, the electrical resistivity is almost constant regardless of the salinity of the pore water. The electrical resistivity of unimproved ground and improved ground is similar when the salinity of the pore water is around 10,000 ppm, and once the salinity exceeds this concentration, the electrical resistivity of the pore water becomes smaller than the resistivity of the chemical solution.

以上より、未改良・改良の電気比抵抗の差異は、地盤種別によるが、間隙水の塩分濃度が5,000~10,000ppm程度までは、判別することが可能と考えられる。 From the above, the difference in electrical resistivity between unimproved and improved soils depends on the type of soil, but it is believed possible to distinguish between soils with pore water salinity concentrations of up to about 5,000 to 10,000 ppm.

図6に示す未改良・改良地盤~間隙水・薬液の電気比抵抗関係と、図4に示す薬液の電気比抵抗~シリカ濃度の関係より試算した改良地盤の電気比抵抗と薬液シリカ濃度の関係を図7に示す。同図には薬液の電気比抵抗も併記している。薬液シリカ濃度2wt%以上では、薬液の電気比抵抗が0.4~1.3Ω・mの範囲に対し、改良地盤の電気比抵抗では1.0~3.3Ω・mと範囲幅が大きくなる。 Figure 7 shows the relationship between the electrical resistivity of the improved ground and the silica concentration of the chemical solution, calculated from the relationship between the electrical resistivity of the unimproved and improved ground, pore water, and chemical solution shown in Figure 6, and the relationship between the electrical resistivity of the chemical solution and silica concentration shown in Figure 4. The figure also shows the electrical resistivity of the chemical solution. When the chemical solution silica concentration is 2 wt% or more, the electrical resistivity of the chemical solution is in the range of 0.4 to 1.3 Ω·m, while the range of the electrical resistivity of the improved ground is wider, at 1.0 to 3.3 Ω·m.

電気検層を用いた本実験結果では、電気比抵抗値のばらつきはほとんど無く、改良地盤と未改良地盤の電気比抵抗比Rimp/Runimpは、薬液と間隙水の電気比抵抗比Rc/Rpwに比例する。 The results of this experiment, which used electrical logging, showed that there was almost no variation in the electrical resistivity values, and the electrical resistivity ratio Rimp/Runimp of improved and unimproved ground was proportional to the electrical resistivity ratio Rc/Rpw of the chemical solution and pore water.

以上の実験結果より、
(a)未改良地盤・改良地盤の電気比抵抗と間隙水・薬液の電気比抵抗の関係は、極めて高い相関性がある。
(b)未改良・改良の電気比抵抗の差異は、地盤種別によるが、間隙水の塩分濃度が5,000~10,000ppm程度までは、判別することが可能である。
(c)特殊シリカ液の電気比抵抗はシリカ濃度が1.5wt%より低くなると急激に増加する。一方、2.0wt%を超えると薬液の電気比抵抗はさほど変わらず、0.4~1.3Ω・mとの範囲にあるが、改良地盤では1.0~3.3Ω・mと範囲幅が大きくなる。
(d)本電気検層による電気比抵抗の測定は、Rc/Rpwの値に関わらずばらつきの少ない値が得られる。
From the above experimental results,
(a) There is an extremely high correlation between the electrical resistivity of unimproved ground and improved ground and the electrical resistivity of pore water and chemical solutions.
(b) The difference in electrical resistivity between unimproved and improved soil depends on the type of soil, but it is possible to distinguish up to a salinity concentration of pore water of approximately 5,000 to 10,000 ppm.
(c) The electrical resistivity of the special silica liquid increases sharply when the silica concentration is lower than 1.5 wt%. On the other hand, when the silica concentration exceeds 2.0 wt%, the electrical resistivity of the liquid does not change much and is in the range of 0.4 to 1.3 Ω m, but in improved ground, the range becomes wider, from 1.0 to 3.3 Ω m.
(d) Electrical resistivity measurements using this electrical logging method produce values with little variation regardless of the value of Rc/Rpw.

次に、電気比抵抗を用いた改良効果の評価であるが、図7に示した改良地盤の電気比抵抗Rimpとシリカ濃度の関係より、シリカ濃度毎のRimpが得られる。また、実工事では、設計基準強度quckに対応する薬液シリカ濃度を設定する目的で、室内にて作製した供試体を用いてシリカ濃度毎の一軸圧縮試験を実施する。図8に珪砂7号(瀬戸産)の一軸圧縮強さquとシリカ濃度(SiO2)の関係を示す。 Next, the improvement effect is evaluated using electrical resistivity, and Rimp for each silica concentration can be obtained from the relationship between the electrical resistivity Rimp and silica concentration of the improved ground shown in Figure 7. In addition, in actual construction, uniaxial compression tests for each silica concentration are carried out using specimens prepared indoors, with the aim of setting the chemical silica concentration that corresponds to the design standard strength quck. Figure 8 shows the relationship between the uniaxial compressive strength qu and silica concentration ( SiO2 ) of silica sand No. 7 (from Seto).

(5) まとめ
本実験では、間隙水の塩分濃度(電気比抵抗)が地盤の比抵抗に及ぼす影響と改良前後の比抵抗変化から改良域の判別が可能であるか検証した。実験の結果、以下の(1)~(3)に示す結果が得られた。
(a)未改良・改良地盤の電気比抵抗の差異は、地盤種別によるが、間隙水の塩分濃度が5,000~10,000ppm程度までは判別することが可能である。また、事前に現地土砂を用いて本実験を実施することで本手法の適用性を判断できる。
(b)点電極を用いた電気検層による電気比抵抗の測定は、Rc/Rpwの値に関わらずばらつきの少ない値が得られる。したがって、細かい比抵抗の変化を捉えることができる。
(c)電気比抵抗を用いた改良効果の評価は、地盤の電気比抵抗とシリカ濃度の関係および改良強度とシリカ濃度の関係を用いて評価できる。
(5) Summary In this experiment, we verified the effect of the salinity of pore water (electrical resistivity) on the resistivity of the ground and whether it is possible to distinguish the improved area from the change in resistivity before and after improvement. The results of the experiment, as shown in (1) to (3) below, were obtained.
(a) The difference in electrical resistivity between unimproved and improved ground depends on the type of ground, but it is possible to distinguish between salinity concentrations of pore water of up to about 5,000 to 10,000 ppm. In addition, the applicability of this method can be determined by conducting experiments in advance using on-site soil and sand.
(b) Electrical resistivity measurements using point electrodes based on electrical logging provide values with little variation regardless of the value of Rc/Rpw. Therefore, minute changes in resistivity can be detected.
(c) The improvement effect using electrical resistivity can be evaluated using the relationship between the electrical resistivity of the ground and the silica concentration, and the relationship between the improvement strength and silica concentration.

2.現場実証実験
(1)実験概要
本実験は、改良試験施工による薬液改良地盤を対象に改良前後の地盤に小型動的コーン貫入試験を実施後、同貫入孔を利用して電気検層による電気比抵抗を測定し、改良域の改良効果を評価した。また、小型動的コーン貫入試験より得られたNd値、乱さない試料を採取して実施した一軸圧縮試験および繰返し三軸試験結果と比較し、本手法の有効性について検証した。なお、電気比抵抗の測定においては押込型マイクロ電気検層法を採用した。
2. On-site demonstration experiment
(1) Experimental overview In this experiment, small dynamic cone penetration tests were conducted on the ground before and after improvement using the chemically improved ground obtained through the improvement test construction, and the electrical resistivity was measured by electrical logging using the same penetration hole to evaluate the improvement effect of the improved area. In addition, the Nd values obtained from the small dynamic cone penetration tests were compared with the results of uniaxial compression tests and cyclic triaxial tests conducted using undisturbed samples to verify the effectiveness of this method. Note that the indentation-type micro-electrical logging method was used to measure the electrical resistivity.

(2)押込型マイクロ電気検層法の概要
押込型マイクロ電気検層法は、ボーリング孔内に挿入した電極により測定する一般的な電気検層とは異なり、動的コーン貫入試験等を実施した後に、同貫入孔を利用して測定を行う。押込型マイクロ電気検層法のプローブは、点電極(二極法)の電極配置にて電極間隔2.5cm、 5.0cmとした。プローブの直径は、小型動的コーン貫入試験の貫入孔に圧入することを想定して直径32mmとした。また、プローブ電極を貫入孔の壁面に圧着させるためスリーブ側面に3mmの突起を設けている。図9にプローブの貫入孔への圧入装置1を示す。
(2) Overview of the Push-in Micro-Electrical Logging Method Unlike general electrical logging, which uses electrodes inserted into a borehole for measurement, the push-in micro-electrical logging method uses the borehole for measurement after a dynamic cone penetration test or the like is performed. The probe for the push-in micro-electrical logging method is a point electrode (two-pole method) with an electrode spacing of 2.5 cm and 5.0 cm. The diameter of the probe is 32 mm, assuming that it will be pushed into the penetration hole of a small dynamic cone penetration test. In addition, a 3 mm protrusion is provided on the side of the sleeve to press the probe electrode against the wall of the penetration hole. Figure 9 shows the device 1 for pushing the probe into the penetration hole.

圧入装置1は、貫入孔3の直上の地表面に、貫入孔3の両側にそれぞれ上下方向に沿って伸縮自在とされたピストン10、10が配置され、これらピストン10、10の上端同士に跨設された架台11の中央部に、下端に測定プローブ2が連結された貫入ロッド4を挟持するチャック12が備えられるとともに、前記ピストン10、10の動作を制御するコントロールユニット13が備えられたものである。また、前記コントロールユニット13には、エンジン及び油圧ポンプからなる油圧ユニット14が接続されている。 The pressing device 1 is configured such that pistons 10, 10 that are extendable and retractable in the vertical direction are arranged on both sides of the penetration hole 3 on the ground surface directly above the penetration hole 3, and a chuck 12 that holds a penetration rod 4 with a measurement probe 2 connected to its lower end is provided in the center of a stand 11 that straddles the upper ends of the pistons 10, 10, and a control unit 13 that controls the operation of the pistons 10, 10. A hydraulic unit 14 consisting of an engine and a hydraulic pump is connected to the control unit 13.

前記圧入装置1では、両側のピストン10、10が同調して伸縮し、前記架台11が上下方向に移動することにより、前記チャック12によって挟持された貫入ロッド4が上下方向に移動し、測定プローブ2の貫入孔3への押し込み及び引き抜きが行われるようになっている。 In the press-fitting device 1, the pistons 10 on both sides expand and contract in unison, and the base 11 moves vertically, causing the penetration rod 4 clamped by the chuck 12 to move vertically, and the measurement probe 2 is pushed into and pulled out of the penetration hole 3.

(3)実験サイトの概要
図10及び図11に、実験サイトの土質柱状図とN値および粒径加積曲線を示し、下表3に物理特性を示す。地層は、地表面から盛土、砂混りシルト、その下部にシルト混り砂が続いている。薬液改良対象層であるシルト混り砂は、GL-2m~-4mに有機質土を含み、GL-5m以深にシルトを層状に含む。地下水位は、GL-1.1mで、地下水の電気比抵抗は4~12Ω・m、同塩分濃度は400~1,300ppmの範囲にある。

Figure 0007696563000003
(3) Overview of the experimental site Figures 10 and 11 show the soil column diagram, N value, and grain size accumulation curve of the experimental site, and Table 3 below shows the physical properties. The strata consist of embankment, sand-mixed silt, and silt-mixed sand below that, from the surface. The silt-mixed sand, which is the target layer for chemical improvement, contains organic soil from GL-2m to -4m below ground level, and contains a layer of silt below GL-5m. The groundwater level is GL-1.1m, the electrical resistivity of the groundwater is 4-12 Ω・m, and the salinity is in the range of 400-1,300ppm.
Figure 0007696563000003

図12に薬液改良体の平面図を示し、図13にその断面図を示し、改良仕様を下表4に示す。改良A、改良Bとも計画改良直径2.5mを満足し、改良体表面には未固結部は見られていない。

Figure 0007696563000004
Figure 12 shows a plan view of the chemical improvement body, Figure 13 shows its cross-sectional view, and the improvement specifications are shown in Table 4 below. Both Improvement A and Improvement B satisfied the planned improvement diameter of 2.5 m, and no unconsolidated areas were observed on the surface of the improvement body.
Figure 0007696563000004

(4)実験方法
実験は、改良体を埋め戻した後、小型動的コーン貫入試験(Penny)を実施し、同貫入孔を利用して押込型マイクロ電気検層を実施した。測定は、図12に示すように未改良:1箇所、改良A:2箇所、改良B:2箇所について実施した。測定深度は、未改良:GL-10m、改良A:GL-8mおよび改良B:GL-5mとした。測定時の改良体材令は約23ヶ月である。また、現地土砂を用いて前述と同様な小型模型地盤を作製し、未改良、改良地盤の電気比抵抗を測定した。
(4) Experimental method After backfilling the improved body, a small dynamic cone penetration test (Penny) was conducted, and a push-type micro-electrical logging was carried out using the same penetration hole. Measurements were carried out at one unimproved location, two improved locations A, and two improved locations B, as shown in Figure 12. The measurement depths were Unimproved: GL-10m, Improved A: GL-8m, and Improved B: GL-5m. The age of the improved body at the time of measurement was approximately 23 months. In addition, small model ground similar to that described above was created using local soil and sand, and the electrical resistivity of the unimproved and improved ground was measured.

(5)実験結果
図14及び図15にそれぞれ、改良Aと改良Bとについて、一軸圧縮強さqu、小型動的コーン貫入試験より得られたNと等価なN値、押込型マイクロ電気検層(電極間隔2.5cm)より得られた電気比抵抗Rおよび改良地盤と未改良地盤の電気比抵抗の比(Rimp/Runimp)の深度分布を示す。
(5) Experimental results Figures 14 and 15 show the depth distribution of the uniaxial compressive strength q, the Nd value equivalent to N obtained from a small dynamic cone penetration test, the electrical resistivity R obtained from a push-type micro-electrical logging (electrode spacing 2.5 cm), and the ratio of electrical resistivity between the improved ground and the unimproved ground (Rimp/Runimp) for Improvement A and Improvement B, respectively.

(a)一軸圧縮強さqu
一軸圧縮強試験は、改良試験施工時にブロックサンプリング、ロータリー式三重管サンプラーにて採取した改良砂試料(材令28日)について実施した。改良体の強度は、改良体半径の1/2位置にて採取された試料を用いて評価されていることから、図14、図15には同位置より採取した試料の試験結果を示した。また、採取した供試体内に有機質土、腐植土等が介在する場合、同箇所に沿ってクラックが発生することで著しく低い値となったことから、有機質土、腐植土介在の有無により仕分をした。
(a) Uniaxial compressive strength q
The unconfined compressive strength test was carried out on improved sand samples (28 days old) taken with block sampling and a rotary triple tube sampler during the improvement test construction. The strength of the improved body was evaluated using samples taken at 1/2 the radius of the improved body, so Figures 14 and 15 show the test results of samples taken from the same position. Furthermore, when organic soil, humus, etc. was present within the sampled specimens, cracks occurred along the same points, resulting in significantly lower values, so they were classified according to the presence or absence of organic soil or humus.

一軸圧縮強さquは、改良Aでは、特にばらつきが大きい。これは、採取した供試体内の有機質土、腐植土の介在によるクラックの発生が主な原因であるが、同様な供試体は、三重管サンプラーにて採取した試料に多く見られた。自然地盤において一軸圧縮強さによる改良前後の特性変化を定量的に把握することは、難しい結果であった。 The uniaxial compressive strength qu varies particularly widely in improvement A. This is mainly due to cracks occurring due to the presence of organic soil and humus in the collected specimens, but similar specimens were often seen in samples collected with a triple tube sampler. It was difficult to quantitatively grasp the change in properties before and after improvement in uniaxial compressive strength in natural ground.

(b)N
改良Aでは、改良後のN値は概ね増加している。改良によるN値増分の平均は、GL-2m~-4mの上部改良体にて改良中心+10cm位置:16程度、改良中心+60cm位置:6程度、GL-4m~-6mの下部改良体にて改良中心+10cm位置:6程度、改良中心+60cm位置:6程度であった。一方、改良Aと比較して目標改良強度が1/2の改良Bでは、改良体上半分ではNd値の増加が認められるものの下半分では増加は認められなかった.
(b) Nd value With improvement A, the Nd value generally increased after improvement. The average increase in Nd value due to improvement was approximately 16 at +10cm from the improvement center, and approximately 6 at +60cm from the improvement center in the upper improved body from GL -2m to -4m, and approximately 6 at +10cm from the improvement center, and approximately 6 at +60cm from the improvement center in the lower improved body from GL -4m to -6m. On the other hand, with improvement B, which had a target improvement strength that was half that of improvement A, an increase in the Nd value was observed in the upper half of the improved body, but no increase was observed in the lower half.

(c)電気比抵抗R
電気比抵抗Rは、未改良地盤ではGL-3.0m~-4.0m付近にて90~130Ω・m程度と高い値を示すが、その他の深度では概ね30~60Ω・mである。一方、改良地盤では改良AにてGL-2.0m~GL-6.0mの全ての改良深度においてR=1~3Ω・m程度と低い値を示し、改良BにてGL-2.0m~-3.5mにて2~10Ω・m、GL-3.5m~4.0mにて20~70Ω・mを示している。電気比抵抗は、改良により大きく低下していることがわかる。
(c) Electrical resistivity R
In unimproved ground, electrical resistivity R shows high values of around 90 to 130 Ω·m at around GL-3.0m to -4.0m, but is generally 30 to 60 Ω·m at other depths. On the other hand, in improved ground, improvement A shows low values of R = 1 to 3 Ω·m at all improvement depths from GL-2.0m to GL-6.0m, and improvement B shows 2 to 10 Ω·m at GL-2.0m to -3.5m, and 20 to 70 Ω·m at GL-3.5m to 4.0m. It can be seen that electrical resistivity is greatly reduced by the improvement work.

(d)改良効果の評価
現地で測定した電気比抵抗に基づいて改良の効果を評価するため、現地土砂を用いて前述の小型土槽実験と同様に模型地盤を作製し、未改良、改良地盤の電気比抵抗を測定した。土槽の作製条件は、地盤密度:D=50%(e=0.911)、間隙水の塩分濃度:400, 1,300, 20,000ppm、使用薬液:特殊シリカ液8wt%である。また、改良地盤は同地盤に特殊シリカ液を浸透注入することにより作製している。
(d) Evaluation of improvement effect In order to evaluate the improvement effect based on the electrical resistivity measured on-site, a model ground was prepared using on-site soil in the same manner as in the small soil tank experiment described above, and the electrical resistivity of the unimproved and improved ground was measured. The soil tank preparation conditions were: soil density: D r =50% (e=0.911), salinity of pore water: 400, 1,300, 20,000 ppm, chemical solution used: special silica liquid 8 wt%. The improved ground was prepared by injecting the special silica liquid into the same ground.

したがって、同実験にて測定された改良地盤の電気比抵抗は、薬液充填率100%に近い条件下であると考えられる。 Therefore, the electrical resistivity of the improved ground measured in this experiment is considered to be under conditions where the chemical filling rate is close to 100%.

図16に未改良・改良地盤~間隙水・薬液の電気比抵抗関係を示し、同図と図4に示す薬液の電気比抵抗~シリカ濃度の関係より試算した改良地盤の電気比抵抗Rimpと薬液シリカ濃度(SiO2)の関係を図17に示す。また、図18に配合試験より得られた一軸圧縮強さquとシリカ濃度(SiO2)の関係を示し、図18と図17とにより一軸圧縮強さquと改良地盤と未改良地盤の電気比抵抗の比Rimp/Runimpの関係に整理したものを図22に示す。 Figure 16 shows the relationship between the electrical resistivity of unimproved and improved ground and the pore water and chemical solution, and Figure 17 shows the relationship between the electrical resistivity Rimp of the improved ground and the chemical solution silica concentration ( SiO2 ), calculated from the same figure and the relationship between the electrical resistivity and silica concentration of the chemical solution shown in Figure 4. Figure 18 shows the relationship between the unconfined compressive strength qu and the silica concentration ( SiO2 ) obtained from the mix test, and Figure 22 shows the relationship between the unconfined compressive strength qu and the ratio of electrical resistivity Rimp/Runimp of the improved ground to the unimproved ground, compiled from Figures 18 and 17.

具体的には、以下の手順により、図22の相関図(一軸圧縮強さquと改良地盤と未改良地盤の電気比抵抗の比Rimp/Runimpとの関係)を得るようにする。 Specifically, the correlation diagram in Figure 22 (relationship between the uniaxial compressive strength qu and the ratio of electrical resistivity Rimp/Runimp of improved ground to unimproved ground) is obtained by the following procedure.

図17に示されるシリカ濃度(SiO2)と改良地盤の電気比抵抗(Rimp)との相関図を整理(変換)して、図19及び図20に示されるように、横軸を希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)とし、縦軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図を得るようにする。 The correlation diagram between silica concentration ( SiO2 ) and electrical resistivity (Rimp) of the improved ground shown in Figure 17 is rearranged (converted) to obtain a correlation diagram as shown in Figures 19 and 20, in which the horizontal axis is the ratio (c/co) of the silica concentration after dilution (c) to the intended silica concentration (co) and the vertical axis is the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp).

図19は、改良Aの場合の変換したグラフである。この場合、Runimp=15Ω・m(塩分濃度1,300ppm 地下水塩分濃度)と仮定した。所期のシリカ濃度はco=8wt%である。同図において、図面左側は横軸を横軸を希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)としたグラフであり、図面右側は更に縦軸を改良地盤の電気比抵抗(Rimp)を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)としたグラフである。 Figure 19 is a graph converted for improvement A. In this case, it is assumed that Runimp = 15 Ω・m (salt concentration 1,300 ppm groundwater salinity). The intended silica concentration is co = 8 wt%. In the figure, the left side of the figure is a graph with the horizontal axis representing the ratio (c/co) of the silica concentration after dilution (c) to the intended silica concentration (co), and the right side of the figure is a graph with the vertical axis representing the electrical resistivity (Rimp) of the improved ground as the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp).

図20は、改良Bの場合の変換したグラフである。この場合、Runimp=15Ω・m(塩分濃度1,300ppm 地下水塩分濃度)と仮定した。所期のシリカ濃度はco=5wt%である。同図において、図面左側は横軸を希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)としたグラフであり、図面右側は更に縦軸を改良地盤の電気比抵抗(Rimp)を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)としたグラフである。 Figure 20 is a graph converted for improvement B. In this case, Runimp = 15 Ω・m (salt concentration 1,300 ppm groundwater salinity). The intended silica concentration is co = 5 wt%. In the figure, the left side of the figure is a graph with the horizontal axis representing the ratio (c/co) of the silica concentration after dilution (c) to the intended silica concentration (co), and the right side of the figure is a graph with the vertical axis representing the electrical resistivity (Rimp) of the improved ground as the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp).

次に、図18に示されるシリカ濃度(SiO2)と一軸圧縮強さ(qu)との相関図を整理して、図21に示されるように、横軸を希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)とし、縦軸を一軸圧縮強さ(qu)とした相関図を得るようにする。なお、図21(A)が改良Aであり、図21(B)が改良Bである。 Next, the correlation diagram between silica concentration ( SiO2 ) and unconfined compressive strength (qu) shown in Figure 18 is rearranged to obtain a correlation diagram in which the horizontal axis represents the ratio (c/co) of the silica concentration after dilution (c) to the initial silica concentration (co) and the vertical axis represents the unconfined compressive strength (qu), as shown in Figure 21. Note that Figure 21(A) is Improvement A and Figure 21(B) is Improvement B.

図19及び図20の相関図と、図21の相関図とは横軸が希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)で共通しているため、両者を縦軸の関係同士で整理して、図22に示される、一軸圧縮強さquと改良地盤と未改良地盤の電気比抵抗の比Rimp/Runimpの相関図を得ることができる。 The correlation diagrams in Figures 19 and 20 and the correlation diagram in Figure 21 have a common horizontal axis of the ratio (c/co) of the silica concentration after dilution (c) to the intended silica concentration (co), so by sorting the two by the vertical axis relationship, we can obtain the correlation diagram shown in Figure 22, between the unconfined compressive strength qu and the ratio of electrical resistivity Rimp/Runimp of improved ground to unimproved ground.

そして、同図22において、最小二乗法により近似直線を描くと、改良A(目標改良強度quck≧100kPa)および改良B(目標改良強度quck≧50kPa)の改良効果を判断する閾値を設定すると、改良Aでは、Rimp/Runimp≦0.13、改良Bでは、Rimp/Runimp≦0.16となる。
(e)考察
図14、図15に示すRimp/Runimpの深度分布を見ると、改良AではGL-2.0m~-6.0mの深度にてRimp/Runimpが概ね0.1以下となっている。一方、改良BではGL-2.0m~-3.5mにてRimp/Runimpが0.1以下、GL-3.5m~-4.0mにて0.25~0.8であった。
In FIG. 22, when an approximation line is drawn using the least squares method, a threshold value is set to judge the improvement effect of improvement A (target improvement strength quck≧100 kPa) and improvement B (target improvement strength quck≧50 kPa), and for improvement A, Rimp/Runimp≦0.13, and for improvement B, Rimp/Runimp≦0.16.
(e) Observations Looking at the depth distribution of Rimp/Runimp shown in Figures 14 and 15, in Improved A, Rimp/Runimp was generally 0.1 or less at depths of GL-2.0m to -6.0m. On the other hand, in Improved B, Rimp/Runimp was 0.1 or less at depths of GL-2.0m to -3.5m, and was 0.25 to 0.8 at depths of GL-3.5m to -4.0m.

図22より設定した改良効果判断の閾値は、改良A:Rimp/Runimp≦0.13、改良B:Rimp/Runimp≦0.16であることから、改良AではGL-2.0m~-6.0mにて薬液の充が認められ、改良BではGL-2.0m~-3.5mにて薬液の充が認められるもののGL-3.5m~-4.0mでは十分な充が認められない結果であった。 The thresholds for judging the improvement effect, set from Figure 22, were Improvement A: Rimp/Runimp≦0.13, Improvement B: Rimp/Runimp≦0.16. Therefore, in Improvement A, filling of the chemical solution was observed at GL -2.0m to -6.0m, and in Improvement B, filling of the chemical solution was observed at GL -2.0m to -3.5m, but sufficient filling was not observed at GL -3.5m to -4.0m.

(6)まとめ
本実験では、点電極を用いた電気検層(押込型マイクロ検層)により、現地改良地盤の電磁比抵抗を測定し、その改良効果の評価を試みた。実験の結果、以下の(a),(b)に示す結果が得られた。
(a)新たに開発した押込型マイクロ検層にて測定した比抵抗は、薬液改良前後の差異を敏感に表現できる、
(b)同手法にて測定した電気比抵抗を用いて行った改良効果の評価は、改良範囲におけるN値の増分、一軸圧縮強さおよび液状化強度比と比較しても妥当なものである。
(6) Summary In this experiment, the electromagnetic resistivity of the improved ground was measured by electrical logging (push-type micro logging) using point electrodes, and the improvement effect was evaluated. The results of the experiment are shown in (a) and (b) below.
(a) The resistivity measured by the newly developed indentation micro-logging method can sensitively express the difference before and after chemical improvement.
(b) The evaluation of the improvement effect using the electrical resistivity measured by the same method is valid when compared with the increment in Nd value, unconfined compressive strength and liquefaction strength ratio in the improved area.

3. 結論
本実験では、薬液注入工法の出来高確認として改良前後の電気比抵抗変化に注目し、点電極を用いた電気検層にて小型土槽実験および現場実証実験を実施した。本実験より以下の(1)~(4)に示す結論を得た。
(1)特殊シリカ液の電気比抵抗は、シリカ濃度が1.5wt%より低くなると急激に増加し、2.0wt%を超えると薬液の電気比抵抗はさほどの変化は無く、0.4~1.3Ω・mの狭い範囲にあるが、改良地盤では2.0wt%を超える範囲において1.0~3.3Ω・mと範囲幅が大きくなる。
(2)未改良・改良地盤の電気比抵抗の差異は、地盤種別によるが、間隙水の塩分濃度が5,000~10,000ppm程度までは判別することが可能である。また、事前に現地土砂を用いて本実験を実施することで本手法の適用性を判断できる。
(3)点電極を用いた電気検層による電気比抵抗の測定は、比抵抗トモグラフィによる測定と比較して、Rc/Rpwの値に関わらず、ばらつきの少ない値が得られる。すなわち、間隙水の電気比抵抗が小さい地盤においても、精度の高い値を得ることができる。
(4)電気比抵抗を用いた改良効果の評価は、地盤の電気比抵抗とシリカ濃度の関係および改良強度とシリカ濃度の関係を用いて評価できる。ただし、改良効果を判断する電気比抵抗の閾値の設定には、シリカ濃度の希釈等の影響を明らかにする必要がある。
3. Conclusions In this experiment, we focused on the change in electrical resistivity before and after improvement to confirm the progress of the chemical grouting method, and conducted a small soil tank experiment and a field demonstration experiment using electrical logging with point electrodes. The following conclusions (1) to (4) were obtained from this experiment.
(1) The electrical resistivity of the special silica liquid increases sharply when the silica concentration falls below 1.5 wt%, and when it exceeds 2.0 wt%, there is no significant change in the electrical resistivity of the liquid, remaining in a narrow range of 0.4 to 1.3 Ω·m. However, in improved ground, the range becomes wider, from 1.0 to 3.3 Ω·m, when the silica concentration exceeds 2.0 wt%.
(2) The difference in electrical resistivity between unimproved and improved ground depends on the type of ground, but it is possible to distinguish salinity concentrations of pore water up to about 5,000 to 10,000 ppm. In addition, the applicability of this method can be determined by conducting experiments in advance using on-site soil and sand.
(3) Electrical resistivity measurements using point electrodes can obtain values with less variation regardless of the value of Rc/Rpw compared to measurements using resistivity tomography. In other words, highly accurate values can be obtained even in ground with low electrical resistivity of pore water.
(4) The effectiveness of improvement using electrical resistivity can be evaluated using the relationship between the electrical resistivity of the ground and the silica concentration, and the relationship between the improvement strength and the silica concentration. However, in order to set the threshold value of electrical resistivity for judging the improvement effectiveness, it is necessary to clarify the effects of dilution of the silica concentration, etc.

〔他の形態例〕
(1)上記形態例では、縦軸を一軸圧縮強さ(qu)とし、横軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図(一軸圧縮強さ相関図)を用いて、地盤改良効果を判断したが、一軸圧縮強さ(qu)と液状化強度比(RL)とは一定の換算式によって変換が可能である。また、一軸圧縮強さ(qu)と粘着力(c)とも一定の換算式によって変換が可能である。具体的に、一軸圧縮強さ(qu)と液状化強度比(RL)との相関式を図23に示し(出典:浸透固化処理方法 技術マニュアル改訂版 R2年7月 一般財団法人沿岸技術研究センター)、一軸圧縮強さ(qu)と粘着力(c)との相関式を図24に示す(出典:浸透固化処理方法 技術マニュアル改訂版 R2年7月 一般財団法人沿岸技術研究センター)。
従って、前記縦軸を一軸圧縮強さ(qu)とし、横軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図(一軸圧縮強さ相関図)において、前記縦軸の一軸圧縮強さ(qu)を液状化強度比(RL)又は粘着力(c)に代えた相関図とし、これを用いて地盤改良効果の判定を行うようにすることも可能である。
[Other examples]
(1) In the above example, the effect of ground improvement was judged using a correlation diagram (uniaxial compressive strength correlation diagram) in which the vertical axis is the uniaxial compressive strength (qu) and the horizontal axis is the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to that of the unimproved ground (Runimp). The uniaxial compressive strength (qu) and the liquefaction strength ratio (RL) can be converted using a certain conversion formula. The uniaxial compressive strength (qu) and the cohesion strength (c) can also be converted using a certain conversion formula. Specifically, the correlation formula between the uniaxial compressive strength (qu) and the liquefaction strength ratio (RL) is shown in Figure 23 (Source: Seepage Solidification Treatment Method Technical Manual Revised Edition July 2019, Coastal Technology Research Center), and the correlation formula between the uniaxial compressive strength (qu) and the cohesion strength (c) is shown in Figure 24 (Source: Seepage Solidification Treatment Method Technical Manual Revised Edition July 2019, Coastal Technology Research Center).
Therefore, in a correlation diagram (uniaxial compressive strength correlation diagram) in which the vertical axis is the uniaxial compressive strength (qu) and the horizontal axis is the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp), it is also possible to replace the uniaxial compressive strength (qu) on the vertical axis with the liquefaction strength ratio (RL) or adhesion strength (c) and use this to judge the effectiveness of ground improvement.

(2)上記形態例では、縦軸を一軸圧縮強さ(qu)とし、横軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図(一軸圧縮強さ相関図)を用いて、地盤改良効果を判断したが電気比抵抗と導電率とは換算式によって変換が可能である。具体的に、電気比抵抗(R)と導電率(σ)とは、R(Ω・m)=1/σ(S/m)の関係にある。
従って、改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)は、換算式を当て嵌めると、未改良地盤の導電率(σunimp)と改良地盤の導電率(σimp)との比(σunimp/σimp)に変換することが可能になる。
従って、前記一方軸を一軸圧縮強さ(qu)とし、他方軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図(一軸圧縮強さ相関図)において、前記他方軸の改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)を未改良地盤の導電率(σunimp)と改良地盤の導電率(σimp)との比(σunimp/σimp)に代えた相関図とし、これを用いて地盤改良効果を判定することも可能である。
(2) In the above example, the effect of ground improvement was judged using a correlation diagram (unconfined compressive strength correlation diagram) with the vertical axis being unconfined compressive strength (qu) and the horizontal axis being the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to that of the unimproved ground (Runimp), but electrical resistivity and electrical conductivity can be converted using a conversion formula. Specifically, electrical resistivity (R) and electrical conductivity (σ) have the relationship R (Ω·m) = 1/σ (S/m).
Therefore, by applying the conversion formula, the ratio (Rimp/Runimp) of the electrical resistivity of improved ground (Rimp) to the electrical resistivity of unimproved ground (Runimp) can be converted into the ratio (σunimp/σimp) of the electrical conductivity of unimproved ground (σunimp) to the electrical conductivity of improved ground (σimp).
Therefore, in a correlation diagram (uniaxial compressive strength correlation diagram) in which one axis is the uniaxial compressive strength (qu) and the other axis is the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp), it is also possible to create a correlation diagram in which the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp) on the other axis is replaced with the ratio (σunimp) of the electrical conductivity of the unimproved ground (σimp) to the electrical conductivity (σimp) of the improved ground (σunimp/σimp), and use this to judge the effectiveness of ground improvement.

(3)上記形態例では、前記一軸圧縮強さ相関図において、縦軸を一軸圧縮強さ(qu)とし、横軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)としたが、縦軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とし、横軸を一軸圧縮強さ(qu)とすることも可能である。
また、前記第5手順における横軸を希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)とし、縦軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図や、前記第6手順における横軸を希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)とし、縦軸を一軸圧縮強さ(qu)とした相関図についても同様に、横軸と縦軸とを入れ替えることが可能である。
(3) In the above example, in the uniaxial compressive strength correlation diagram, the vertical axis is the uniaxial compressive strength (qu) and the horizontal axis is the ratio of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp) (Rimp/Runimp), but it is also possible to use the vertical axis as the ratio of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp) (Rimp/Runimp) and the horizontal axis as the uniaxial compressive strength (qu).
Similarly, it is also possible to interchange the horizontal and vertical axes in the correlation diagram in the fifth step in which the horizontal axis is the ratio (c/co) of the silica concentration after dilution (c) to the intended silica concentration (co) and the vertical axis is the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity (Runimp) of the unimproved ground, and in the correlation diagram in the sixth step in which the horizontal axis is the ratio (c/co) of the silica concentration after dilution (c) to the intended silica concentration (co) and the vertical axis is the uniaxial compressive strength (qu).

1…圧入装置、2…測定プローブ、3…貫入孔、4…貫入ロッド、10…ピストン、11…架台、12…チャック、13…コントロールユニット、14…油圧ユニット 1... Press-fitting device, 2... Measurement probe, 3... Penetration hole, 4... Penetration rod, 10... Piston, 11... Stand, 12... Chuck, 13... Control unit, 14... Hydraulic unit

Claims (4)

事前に、一方軸を一軸圧縮強さ(qu)とし、他方軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図を得ておくとともに、該相関図に基づいて、目標とする一軸圧縮強さ(quck)を確保し得る条件の前記改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)の閾値を設定しておき、
地盤改良前後にそれぞれ、地盤に縦方向に形成した貫入孔を利用して電気検層による電気比抵抗を計測し、改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)を求め、この電気比抵抗の比(Rimp/Runimp)が前記閾値より大きいか小さいかで、目標とする一軸圧縮強さ(quck)が確保されているかどうかを判断する薬液注入工法による地盤改良効果の評価方法であって、
記相関図は、地盤改良に使用するシリカ溶液の電気比抵抗特性を把握するために、水でシリカ溶液を希釈してシリカ濃度毎の電気比抵抗を測定して、シリカ濃度(SiO2)と電気比抵抗(Rc)との相関図を得る第1手順と、
未改良・改良地盤の電気比抵抗(Rs・Rimp)と間隙水・薬液の電気比抵抗(Rpw・Rc)との相関図を得る第2手順と、
前記第1手順で得たシリカ濃度(SiO2)と電気比抵抗(Rc)との相関図と、前記第2手順で得た未改良・改良地盤の電気比抵抗(Rs・Rimp)と間隙水・薬液の電気比抵抗(Rpw・Rc)との相関図とに基づいて、シリカ濃度(SiO2)と改良地盤の電気比抵抗(Rimp)との相関図を得る第3手順と、
目標とする一軸圧縮強さ(quck)に対応する薬液シリカ濃度を設定する目的で、室内にて作製した供試体を用いて、シリカ濃度(SiO2)と一軸圧縮強さ(qu)との相関図を得る第4手順と、
前記第3手順で得たシリカ濃度(SiO2)と改良地盤の電気比抵抗(Rimp)との相関図を整理して、一方軸を希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)とし、他方軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図を得る第5手順と、
前記第4手順で得たシリカ濃度(SiO2)と一軸圧縮強さ(qu)との相関図を整理して、一方軸を希釈後のシリカ濃度(c)と所期のシリカ濃度(co)との比(c/co)とし、他方軸を一軸圧縮強さ(qu)とした相関図を得る第6手順と、
前記第5手順で得た相関図と、第6手順で得た相関図に基づいて、前記一方軸を一軸圧縮強さ(qu)とし、他方軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図を得る第7手順によって得るようにすることを特徴とする薬液注入工法による地盤改良効果の評価方法。
A correlation diagram is prepared in advance, in which one axis is the uniaxial compressive strength (qu) and the other axis is the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp), and a threshold value is set for the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp) under conditions that can ensure the target uniaxial compressive strength (quck) based on the correlation diagram.
A method for evaluating the effect of ground improvement using a liquid grouting method, comprising measuring electrical resistivity by electrical logging using a penetration hole formed vertically in the ground before and after ground improvement, determining the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp), and judging whether the target uniaxial compressive strength (quck) is achieved based on whether the electrical resistivity ratio (Rimp/Runimp) is greater than or less than the threshold value ,
The correlation diagram is obtained by: a first step of diluting a silica solution with water and measuring the electrical resistivity for each silica concentration in order to grasp the electrical resistivity characteristics of the silica solution used for ground improvement, and obtaining a correlation diagram between silica concentration (SiO 2 ) and electrical resistivity (Rc);
The second step is to obtain a correlation diagram between the electrical resistivity of unimproved and improved ground (Rs and Rimp) and the electrical resistivity of pore water and chemical solutions (Rpw and Rc).
a third step of obtaining a correlation diagram between silica concentration ( SiO2 ) and electrical resistivity (Rimp) of the improved ground based on the correlation diagram between silica concentration (SiO2) and electrical resistivity (Rc) obtained in the first step and the correlation diagram between the electrical resistivity (Rs·Rimp) of the unimproved and improved ground and the electrical resistivity (Rpw · Rc) of the pore water and chemical solution obtained in the second step;
A fourth step is to obtain a correlation diagram between silica concentration (SiO 2 ) and unconfined compressive strength (q u ) using a test specimen prepared indoors in order to set the liquid silica concentration corresponding to the target unconfined compressive strength (q u );
a fifth step in which the correlation diagram between the silica concentration ( SiO2 ) obtained in the third step and the electrical resistivity (Rimp) of the improved ground is arranged to obtain a correlation diagram in which one axis represents the ratio (c/co) of the silica concentration after dilution (c) to the desired silica concentration (co) and the other axis represents the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp);
a sixth step of arranging the correlation diagram between the silica concentration ( SiO2 ) and the unconfined compressive strength (qu) obtained in the fourth step to obtain a correlation diagram in which one axis represents the ratio (c/co) of the silica concentration after dilution (c) to the desired silica concentration (co) and the other axis represents the unconfined compressive strength (qu);
A method for evaluating the effect of ground improvement using a chemical injection method, characterized in that a correlation diagram is obtained by a seventh step, based on the correlation diagram obtained in the fifth step and the correlation diagram obtained in the sixth step, in which one axis is the uniaxial compressive strength (qu) and the other axis is the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp).
間隙水の塩分濃度が5,000~10,000ppmまでの地盤を地盤改良対象とする請求項1記載の薬液注入工法による地盤改良効果の評価方法。 2. A method for evaluating the effect of ground improvement using the liquid grouting method according to claim 1 , in which the target of ground improvement is ground having a salinity of pore water of 5,000 to 10,000 ppm. 一方軸を一軸圧縮強さ(qu)とし、他方軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした前記相関図に代えて、一軸圧縮強さ(qu)と液状化強度比(RL)との換算式又は一軸圧縮強さ(qu)と粘着力(c)との換算式に基づいて修正した、一方軸を液状化強度比(RL)又は粘着力(c)とし、他方軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした相関図を用いる請求項1、2いずれかに記載の薬液注入工法による地盤改良効果の評価方法。 3. A method for evaluating the effect of ground improvement using a chemical injection method as described in claim 1 or 2, in place of the correlation diagram in which one axis is the uniaxial compressive strength (qu) and the other axis is the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp), a correlation diagram in which one axis is the liquefaction resistance ratio (RL) or adhesion (c) and the other axis is the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground, modified based on the conversion formula between the uniaxial compressive strength (qu) and the liquefaction resistance ratio (RL) or the conversion formula between the uniaxial compressive strength (qu) and the adhesion (c), is used . 一方軸を一軸圧縮強さ(qu)とし、他方軸を改良地盤の電気比抵抗(Rimp)と未改良地盤の電気比抵抗(Runimp)の比(Rimp/Runimp)とした前記相関図に代えて、電機比抵抗(R)と導電率(σ)との換算式(R(Ω・m)=1/σ(S/m))に基づいて修正した、一方軸を一軸圧縮強さ(qu)とし、他方軸を未改良地盤の導電率(σunimp)と改良地盤の導電率(σimp)との比(σunimp/σimp)とした相関図を用いる請求項1、2いずれかに記載の薬液注入工法による地盤改良効果の評価方法。 A method for evaluating the effect of ground improvement using the chemical injection method described in either claim 1 or 2, in place of the correlation diagram in which one axis is the uniaxial compressive strength (qu) and the other axis is the ratio (Rimp/Runimp) of the electrical resistivity of the improved ground (Rimp) to the electrical resistivity of the unimproved ground (Runimp), a correlation diagram is used in which one axis is the uniaxial compressive strength (qu) and the other axis is the ratio (σunimp/σimp) of the electrical conductivity of the unimproved ground (σunimp) to the electrical conductivity of the improved ground (σimp), corrected based on the conversion formula (R(Ω·m)=1/σ(S/m)) between electrical resistivity (R) and electrical conductivity (σ) .
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