JP7699222B2 - Sputtering Equipment - Google Patents

Description

The present invention relates to a sputtering apparatus, and more particularly to a technique suitable for use in deposition using a magnetron cathode.
This application claims priority based on Japanese Patent Application No. 2021-192171, filed in Japan on November 26, 2021, the contents of which are incorporated herein by reference.

In a film forming apparatus having a magnetron cathode, a method is known in which the magnet is moved relative to the target in order to improve the utilization efficiency of the target, etc.

It is also known that, in addition to moving the magnet, the cathode and target can be oscillated relative to the substrate on which the film is to be formed, in order to improve the uniformity of the film formed by the film formation method, as in the technology disclosed in Patent Document 1.

It is also known that, as in the technology disclosed in Patent Document 2, the magnet and cathode are oscillated for the purpose of preventing the generated particles from adversely affecting the film formation in the sputtering processing chamber.

Furthermore, the applicants have disclosed a technology such as that disclosed in Patent Document 3, which is a technology for oscillating a substrate on which a film is to be formed relative to a magnet and a cathode.

Japanese Patent Application Publication No. 2009-41115 Japanese Patent Application Publication No. 2012-158835 Japanese Patent No. 6579726

However, even with the above-mentioned technique of scanning (oscillating) the magnet relative to the target, non-erosion regions occur. In the vicinity of the periphery of the deposition region close to the edge of the magnet oscillation region, the non-erosion regions may cause particle generation. There has been a demand to eliminate the occurrence of such non-erosion regions. In particular, it has been found that, rather than the occurrence of non-erosion regions, when the boundary between the non-erosion region and the erosion region becomes blurred, this can cause problematic particle generation, such as re-sputtering of the redeposition film (re-attached film, sputtered film deposited on the target).
In addition, when a non-erosion region occurs in the technology of scanning (oscillating) a magnet with respect to a target, the film thickness decreases and the film quality distribution becomes uneven near the peripheral portion of the film formation region close to the magnet oscillation region. Such problems have not yet been solved. Furthermore, the demand for improvement of such defects has increased as the substrate size has become larger.

The present invention has been made in consideration of the above circumstances, and aims to achieve the following objects.
1. Suppression of the generation of blurred areas around non-erosion areas, reducing the source of particle generation.
2. To stabilize the distribution of the formed plasma and improve the uniformity of the film thickness distribution and film thickness characteristic distribution regardless of the magnet's swing position.

As a result of extensive research, the inventors of the present application have succeeded in suppressing particle generation in non-erosion regions, as well as suppressing variations in film thickness distribution and film quality characteristic distribution.

During sputtering, a magnetic field (magnetic field, magnetic lines of force) is generated from the magnet due to the applied power. At this time, the plasma or electrons that contribute to sputtering move along the magnetic lines of force generated by the magnet. Of the magnetic lines of force from the magnet, those that contribute to plasma generation form an arc from the N pole toward the target and reach the S pole of the magnet, which is placed flush and parallel to the target. At this time, the magnetic lines of force from the magnet penetrate the target in the thickness direction from the back side to the front side from the N pole, form an arc in the plasma generation space, penetrate the target in the thickness direction from the front side to the back side, and return to the S pole.

A portion at ground potential, such as an anode, is disposed around the edge of the target. In this state, when the magnet is scanned (oscillated) and positioned near the end of the oscillation, the magnet is positioned close to this anode.
When this happens, near the swinging end of the magnet, the magnetic field lines generated from the north pole may move toward the anode, which is close to the magnetic field lines, and may not return to the south pole. As a result, the electrons are tracked (move) along the magnetic field lines, and do not return to the plasma generation space, but flow to the anode without contributing to plasma generation. This is called electron absorption.

When electrons are absorbed by the anode, the electron density on the surface side of the target, i.e., in the plasma generation space, decreases. This can result in a phenomenon in which the density of the plasma formed decreases, or no plasma is generated. This is called plasma absorption. When this phenomenon occurs, the target is not sputtered by the plasma, so non-erosion areas are created, and the non-erosion areas can become larger.

When electrons are absorbed by the anode, the plasma near the anode turns on and off due to the magnet's oscillation and other factors. This causes sputtering by the plasma to turn on and off. This increases the possibility of particles being generated due to sputtering of the redeposition film.

In other words, the occurrence of a non-erosion region may cause particles to be generated near the periphery of the film-forming region adjacent to the region where the magnet oscillates.
At this time, the boundary between the non-erosion region and the erosion region becomes unclear, and an erosion-non-erosion boundary region is formed.

Thus, it was found that the blurring of the boundary between the non-erosion area and the erosion area, rather than the occurrence of non-erosion areas, is the cause of problematic particle generation, such as re-sputtering of the redeposited film.

As described above, when electrons are absorbed by the anode, the magnetic field lines from the magnet are directed toward the anode, that is, inclined outward from the target contour rather than in the thickness direction of the target.

Therefore, in order to solve this problem, the inventors of the present application have discovered that it is possible to reduce the amount of electrons absorbed by directing the magnetic field lines generated from the magnet at the oscillating end of the magnet away from the anode. In other words, the inventors of the present application have discovered that inclining the magnetic field lines generated from the magnet at one end of the oscillating end of the magnet toward the other end of the oscillating end of the magnet rather than in the thickness direction of the target, i.e., inclining them inward from the target's contour rather than in the thickness direction of the target, is effective in reducing the non-erosion region.

In the above explanation, the magnetic field lines are shown as reaching from the north pole to the south pole, as is the usual notation, but the phenomenon can be understood without any problems if the polarity is reversed.

Furthermore, when a non-erosion region occurs, plasma generation is suppressed. As a result, the applied power supply is not consumed in plasma generation and becomes surplus. This surplus power is redistributed to regions other than the original non-erosion region, or is absorbed as an overall voltage (power) fluctuation. As a result, the plasma generation conditions fluctuate like voltage fluctuations, which ultimately causes variations in film thickness distribution and increased variations in film quality characteristic distribution.

In other words, when electrons are absorbed by the anode, the variation in film thickness distribution and film quality characteristic distribution increases due to the occurrence of non-erosion regions.

Furthermore, when a non-erosion region has already occurred, partial fluctuations in the plasma generation conditions due to voltage fluctuations, etc., can result in the generation of new non-erosion regions that are different from the original non-erosion region. In this case, particle generation and variations in film thickness distribution and film quality characteristic distribution will increase.

Therefore, in order to solve this problem, the inventors of the present application have discovered that it is possible to reduce the amount of electrons absorbed by directing the magnetic field lines generated from the magnet at one end of the magnet's oscillating end away from the anode. In other words, the inventors of the present application have discovered that inclining the magnetic field lines generated from the magnet at one end of the magnet's oscillating end toward the other end of the magnet's oscillating end rather than in the thickness direction of the target, i.e., inclining them inward from the target's contour rather than in the thickness direction of the target, is effective in suppressing the occurrence of variations in film thickness distribution and film quality characteristic distribution.

In view of these, the present inventors have completed the present invention as follows.
A sputtering apparatus according to one aspect of the present invention includes a cathode unit that emits sputter particles toward a surface of a substrate to be processed. The cathode unit includes a target on which an erosion region is formed, a magnet unit, a magnet scanning unit, and an auxiliary magnet. The magnet unit includes a plurality of magnets that are disposed on the opposite side of the target from the substrate to form the erosion region on the target. The magnet scanning unit can relatively reciprocate the magnet unit and the substrate to be processed between a first swing end and a second swing end in a swing direction along the surface of the substrate to be processed. The auxiliary magnet tilts the magnetic field lines formed by the magnet located at the first swing end toward the second swing end along the magnet located at the first swing end among the plurality of magnets extending in a cross direction intersecting the swing direction along the surface of the substrate to be processed. The auxiliary magnet is disposed along the magnet located at the first swing end on the opposite side of the first swing end to the second swing end, and the auxiliary magnet can swing integrally with the magnet . The auxiliary magnet has the same polarity as the magnet located at the first swing end. The magnetic strength of the auxiliary magnet is equal to or smaller than the magnetic strength of the magnet located at the first swing end. The auxiliary magnet has a protrusion that protrudes along the magnet toward the target.
In the sputtering apparatus according to one aspect of the present invention, the auxiliary magnet may be disposed on the opposite side of the target to the substrate to be processed, and may be attached and fixed to a yoke that forms a magnetic circuit.
In a sputtering apparatus according to one embodiment of the present invention, the cathode unit has a flat yoke having a central region made of a magnetic material on its surface, an auxiliary yoke adjacent to the yoke, a central magnet portion arranged in a straight line in the central region of the yoke, a peripheral magnet portion arranged to surround the central magnet portion, a parallel region in which the central magnet portion and the peripheral magnet portion are parallel to each other, a magnetic circuit provided on the surface of the yoke, and a backing plate arranged overlapping the magnetic circuit, and each of the multiple magnets constituting the magnet unit is arranged on the yoke, the auxiliary magnet is arranged parallel to the peripheral magnet portion, and the auxiliary magnet is fixed to the yoke via the auxiliary yoke, and the auxiliary yoke may be made of a magnetic material or a dielectric material.
In the sputtering apparatus according to one aspect of the present invention, the auxiliary yoke and the auxiliary magnet may be detachable from the yoke.
In a sputtering apparatus according to one embodiment of the present invention, the magnet located at the first oscillating end of the multiple magnets has multiple magnetic field generating regions divided in the intersecting direction, each of the magnetic field generating regions has a split yoke, a split peripheral magnet portion, a split central magnet portion, and a split auxiliary magnet, and the position of each of the magnetic field generating regions is adjustable in the intersecting direction and in the thickness direction of the yoke, and the magnet having the multiple magnetic field generating regions whose positions have been adjusted may be oscillated by the magnet scanning unit.

A sputtering apparatus according to one aspect of the present invention includes a cathode unit that emits sputter particles toward a surface of a substrate to be processed. The cathode unit includes a target on which an erosion region is formed, a magnet unit, a magnet scanning unit, and an auxiliary magnet. The magnet unit includes a plurality of magnets that are disposed on the opposite side of the target from the substrate to form the erosion region on the target. The magnet scanning unit can relatively reciprocate the magnet unit and the substrate to be processed between a first swing end and a second swing end in a swing direction along the surface of the substrate to be processed. The auxiliary magnet tilts the magnetic field lines formed by the magnet located at the first swing end toward the second swing end along the magnet located at the first swing end among the plurality of magnets extending in a cross direction intersecting the swing direction along the surface of the substrate to be processed.
As a result, the magnetic field lines formed by the magnet located at the first oscillation end among the multiple magnets can be tilted by using the magnetic field generated by the auxiliary magnet. This makes it possible to reduce the amount of electrons absorbed by the anode. This makes it possible to suppress the absorption of plasma and the reduction in plasma density. This effectively reduces the erosion-non-erosion boundary region, thereby reducing the generation of particles caused by the formation of the erosion-non-erosion boundary region.
At the same time, by suppressing fluctuations in the supply pressure, fluctuations in plasma density due to the magnet's swing position can be suppressed, the plasma generation state can be stabilized, and variations in film thickness distribution and film quality characteristic distribution can be effectively suppressed.

In a sputtering apparatus according to one embodiment of the present invention, the auxiliary magnet is arranged along the magnet located at the first swing end, on the opposite side of the second swing end relative to the first swing end, and the auxiliary magnet may be capable of swinging integrally with the magnet.
This prevents the magnetic field lines from decreasing regardless of the magnet's swing position. The plasma generation state is stabilized, and the formation of an erosion-non-erosion boundary region is prevented. It is possible to suppress particle generation as well as the occurrence of variations in film thickness distribution and film quality distribution.

In the sputtering apparatus according to one aspect of the present invention, the auxiliary magnet may have the same polarity as the magnet located at the first oscillation end.
As a result, the magnetic field lines from the magnet that generates the plasma are repelled by the magnetic field lines from the auxiliary magnet. This makes it possible to tilt the magnetic field in a specified direction while maintaining the required magnetic strength (magnetic flux density). Therefore, the formation of an erosion-non-erosion boundary region is suppressed without causing a decrease in plasma density. It is possible to suppress particle generation as well as the occurrence of variations in film thickness distribution and film quality distribution.

In the sputtering apparatus according to one aspect of the present invention, the magnetic strength of the auxiliary magnet may be equal to or smaller than the magnetic strength of the magnet located at the first oscillation end.
This makes it possible to tilt the magnetic field lines from the magnets that generate plasma at a predetermined angle without excessively tilting the magnetic field lines from the auxiliary magnets. Therefore, no unnecessary decrease in plasma density occurs, no unnecessary non-erosion boundary regions are generated, and the formation of an erosion-non-erosion boundary region is suppressed. It is possible to suppress particle generation and the occurrence of variations in film thickness distribution and film quality distribution.

In the sputtering apparatus according to one aspect of the present invention, the auxiliary magnet may have a protrusion that protrudes along the magnet toward the target.
This allows the magnetic field lines of the auxiliary magnet to be concentrated from the ridges. This allows the magnetic field lines from the magnet that generates plasma to be efficiently tilted without dispersing the magnetic field lines of the auxiliary magnet. This allows the auxiliary magnet to be made smaller and lighter, and allows the magnet and auxiliary magnet to be oscillated without placing an unnecessary burden on the magnet scanning unit. This prevents the formation of an erosion-non-erosion boundary region without causing a decrease in plasma density or generating an unnecessary non-erosion boundary region. This prevents particle generation and also prevents variations in film thickness distribution and film quality characteristic distribution.

In the sputtering apparatus according to one aspect of the present invention, the auxiliary magnet may be disposed on the opposite side of the target to the substrate to be processed, and may be attached and fixed to a yoke that forms a magnetic circuit.
This allows the auxiliary magnet to oscillate integrally with the magnet. Furthermore, regardless of the oscillating position, the auxiliary magnet can maintain a constant inclination of the magnetic field lines relative to the magnet located at the first oscillating end. Furthermore, the magnetic field of the auxiliary magnet can be incorporated into the magnetic circuit of the magnet formed together with the yoke, allowing for more efficient plasma generation.

In a sputtering apparatus according to one embodiment of the present invention, the cathode unit has a flat yoke having a central region made of a magnetic material on its surface, an auxiliary yoke adjacent to the yoke, a central magnet portion arranged in a straight line in the central region of the yoke, a peripheral magnet portion arranged to surround the central magnet portion, a parallel region in which the central magnet portion and the peripheral magnet portion are parallel to each other, a magnetic circuit provided on the surface of the yoke, and a backing plate arranged overlapping the magnetic circuit, and each of the multiple magnets constituting the magnet unit is arranged on the yoke, the auxiliary magnet is arranged parallel to the peripheral magnet portion, and the auxiliary magnet is fixed to the yoke via the auxiliary yoke, and the auxiliary yoke may be made of a magnetic material or a dielectric material.
As a result, the magnetic pole face of the peripheral magnet part is arranged along a plane parallel to the substrate on which the film is to be formed. The magnetic field lines of the peripheral magnet located at the first swing end in the swing direction, which are directed away from the second swing end from the direction perpendicular to the magnetic pole face, are tilted toward the second swing end from the direction perpendicular to the magnetic pole face. As a result, even when the magnet is at the swing position closest to the anode, the amount of electrons absorbed by the anode can be reduced. The plasma density is prevented from decreasing at the periphery in the swing direction, and the formation of an erosion-non-erosion boundary region is suppressed without generating an unnecessary non-erosion boundary region. The generation of particles can be suppressed, and the occurrence of variations in film thickness distribution and film quality distribution can be suppressed.

In the sputtering apparatus according to one aspect of the present invention, the auxiliary yoke and the auxiliary magnet may be detachable from the yoke.
Therefore, when performing processing under different processing conditions in the sputtering device, it is necessary to form magnetic lines of force according to the processing conditions. For this reason, it is necessary to change the inclination angle of the magnetic lines of force from the magnet at the swing end. In this case, it is possible to easily change the settings by replacing the auxiliary magnet.

In a sputtering apparatus according to one embodiment of the present invention, the magnet located at the first oscillating end of the multiple magnets has multiple magnetic field generating regions divided in the intersecting direction, each of the magnetic field generating regions has a split yoke, a split peripheral magnet portion, a split central magnet portion, and a split auxiliary magnet, and the position of each of the magnetic field generating regions is adjustable in the intersecting direction and in the thickness direction of the yoke, and the magnet having the multiple magnetic field generating regions whose positions have been adjusted may be oscillated by the magnet scanning unit.
In order to control the film formation state for the entire film formation region, for example, the magnetic flux density conditions related to plasma generation are adjusted in the cross direction and the thickness direction of the yoke. With this configuration, the magnetic field generation region is divided into a plurality of regions, and the position of each of the magnetic field generation regions in the cross direction and the thickness direction of the yoke can be adjusted. Therefore, it is possible to adjust the magnetic flux density conditions in each of the magnetic field generation regions.
By adjusting each of the multiple magnetic field generating regions in the cross direction and the thickness direction of the yoke, the magnetic field lines of the peripheral magnetic poles of the magnets located at the first oscillation ends can be tilted in the required direction by the divided auxiliary magnets in each of the multiple magnetic field generating regions. In each of the multiple magnetic field generating regions, the magnetic field lines can be maintained in a state in which they are tilted in the required direction.

According to a sputtering device according to one aspect of the present invention, the required magnetic flux density can be maintained to maintain the plasma density. Furthermore, the generation of blurred areas around non-erosion areas can be suppressed to reduce particles, and the formed plasma distribution can be stabilized. It is possible to achieve the effect of improving the uniformity of the film thickness distribution and film thickness characteristic distribution regardless of the magnet oscillation position.

1 is a schematic plan view showing a sputtering apparatus according to an embodiment of the present invention. FIG. 2 is a perspective view showing a cathode unit in the sputtering apparatus according to the embodiment of the present invention. 1 is a schematic diagram showing a positional relationship between a glass substrate and a cathode device in a sputtering apparatus according to an embodiment of the present invention; 1 is a front view showing the positional relationship between a glass substrate, a target, and a magnet unit in a sputtering apparatus according to an embodiment of the present invention. FIG. 2 is a diagram showing an end portion of a magnet unit of a sputtering apparatus according to an embodiment of the present invention, and is an enlarged front view showing the configuration of a magnet and an auxiliary magnet that constitute the magnet unit. FIG. 2 is a diagram showing an end portion of a magnet unit of a sputtering apparatus according to an embodiment of the present invention, and is an enlarged cross-sectional view showing the configuration of a magnet and an auxiliary magnet that constitute the magnet unit. FIG. 2 is a diagram showing a non-erosion region, an erosion region, and a boundary region in a target of a sputtering device according to an embodiment of the present invention. FIG. 13 is a schematic diagram showing an electron tracking state in a sputtering apparatus according to an embodiment of the present invention when there is no auxiliary magnet. FIG. 2 is a schematic diagram showing the direction of magnetic field lines in a sputtering apparatus according to an embodiment of the present invention when there is no auxiliary magnet. FIG. 2 is a schematic diagram showing an electron tracking state in a sputtering apparatus according to an embodiment of the present invention. 2 is a schematic diagram showing the direction of magnetic lines of force in a sputtering apparatus according to an embodiment of the present invention. FIG. 4 is a graph showing a voltage change with respect to a swing position in the sputtering apparatus according to the embodiment of the present invention. 4 is a graph showing an example of a film thickness distribution by a sputtering apparatus according to an embodiment of the present invention. 1 is a graph showing an example of a film resistance distribution by a sputtering apparatus according to an embodiment of the present invention. 1 is a graph showing an example of a film thickness distribution by a sputtering device. 1 is a graph showing an example of a film resistance distribution by a sputtering device. 1 is a graph showing an example of a film thickness distribution by a sputtering device. 1 is a graph showing an example of a film resistance distribution by a sputtering device. 1 is a graph showing an example of a film thickness distribution by a sputtering device. 1 is a graph showing an example of a film resistance distribution by a sputtering device. 4 is a graph showing the relationship between film thickness distribution and film resistance distribution in the sputtering apparatus according to the present invention. 1 is an image showing the surface of a target after treatment using an auxiliary magnet in a sputtering apparatus according to the present invention. FIG. 4 is a diagram showing the relationship between the arrangement of auxiliary magnets and plasma density in the sputtering apparatus according to the present invention. FIG. 4 is a diagram showing the relationship between the arrangement of auxiliary magnets and plasma density in the sputtering apparatus according to the present invention. FIG. 4 is a diagram showing the relationship between the arrangement of auxiliary magnets and plasma density in the sputtering apparatus according to the present invention. FIG. 4 is a diagram showing the relationship between the arrangement of auxiliary magnets and plasma density in the sputtering apparatus according to the present invention. FIG. 13 is an enlarged cross-sectional view showing a modified example of an auxiliary magnet of the sputtering apparatus according to the embodiment of the present invention. 1 is an image showing the surface of a corner of a target after treatment using an auxiliary magnet in a sputtering apparatus according to the present invention. 1 is an image showing the surface of a corner of a target after processing without using an auxiliary magnet in a sputtering apparatus.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A sputtering apparatus and a sputtering method according to an embodiment of the present invention will now be described with reference to the drawings.
1 is a schematic plan view showing a sputtering apparatus according to the present embodiment, in which reference numeral 1 denotes the sputtering apparatus.

<Sputtering Apparatus 1>
The sputtering apparatus 1 according to the present embodiment is an example of an inter-back type vacuum processing apparatus. Such a vacuum processing apparatus is used, for example, in the manufacturing process of semiconductor devices and the manufacturing process of FPDs (flat panel displays) such as liquid crystal displays and organic EL displays. Specifically, in such a vacuum processing apparatus, a substrate to be processed made of glass or resin is subjected to a heating process, a film forming process, an etching process, etc. in a vacuum environment, for example, when forming a TFT (Thin Film Transistor) on a substrate made of glass or the like.

In this embodiment, the glass substrate 11 (substrate on which a film is formed, transparent substrate) can be a substrate having a side length of about 100 mm or a rectangular substrate having a side length of 2000 mm or more. Furthermore, the glass substrate 11 can be a substrate having a thickness of 1 mm or less, a substrate having a thickness of several mm, or a substrate having a thickness of 10 mm or more.

As shown in FIG. 1, the sputtering apparatus 1 includes a load/unload chamber 2 (vacuum chamber), a film-forming chamber 4 (vacuum chamber), and a transfer chamber 3. The load/unload chamber 2 transfers a substantially rectangular glass substrate 11 from the outside into the load/unload chamber 2 and transfers the load/unload chamber 2 to the outside. In the film-forming chamber 4, a coating such as a ZnO-based or In ₂ O ₃ -based transparent conductive film, a coating of a metal or oxide such as aluminum or silver, or other coating is formed on the glass substrate 11 by a sputtering method. The film-forming chamber 4 has pressure resistance. The transfer chamber 3 is located between the film-forming chamber 4 and the load/unload chamber 2.
1 shows a side sputtering type sputtering apparatus as a sputtering apparatus 1 according to this embodiment. A sputtering down type sputtering apparatus or a sputtering up type sputtering apparatus can also be used as the sputtering apparatus 1.

In addition to the above-mentioned configuration, the sputtering apparatus 1 has a film formation chamber 4A (vacuum chamber) and a load/unload chamber 2a (vacuum chamber). The above-mentioned multiple vacuum chambers 2, 2a, 4, and 4A are arranged to surround the periphery of the transport chamber 3. The sputtering apparatus 1 equipped with such a vacuum chamber is configured to have, for example, two load/unload chambers (vacuum chambers) formed adjacent to each other and multiple processing chambers (vacuum chambers). For example, one of the load/unload chambers 2 and 2a is a load chamber that carries in the glass substrate 11 from the outside to the inside of the sputtering apparatus 1 (vacuum processing apparatus). The other of the load/unload chambers 2 and 2a is an unload chamber that carries out the glass substrate 11 from the inside of the sputtering apparatus 1 to the outside. In addition, the film formation chamber 4 and the film formation chamber 4A may be configured to perform different film formation processes.

A partition valve may be formed between each of these vacuum chambers 2, 2a, 4, 4A and the transfer chamber 3.

The load/unload chamber 2 may be provided with a positioning member capable of setting and aligning the placement position of the glass substrate 11 brought into the interior of the sputtering apparatus 1 from the outside. The load/unload chamber 2 is also provided with a roughing exhaust device (roughing exhaust device, low vacuum exhaust device) such as a rotary pump that roughly evacuates the interior of the load/unload chamber 2.

1, a transfer device 3a (transfer robot) is disposed inside the transfer chamber 3. In the following description, this may be referred to as the transfer robot 3a.
The transport device 3a has a rotating shaft, a robot arm attached to the rotating shaft, a robot hand formed at one end of the robot arm, and a vertical movement device for moving the robot hand up and down. The robot arm is composed of a first active arm, a second active arm, a first driven arm, and a second driven arm that are mutually bendable. The transport device 3a can move the glass substrate 11, which is the object to be transported, between each of the vacuum chambers 2, 2a, 4, 4A and the transport chamber 3.

As shown in FIG. 1, the film formation chamber 4 is provided with a cathode device 10, a substrate holding portion 13 which is a substrate holder having a mask and the like, a gas introduction device, and a high vacuum exhaust device.
1, the inside of the film formation chamber 4 is composed of a front space 41 in which the front surface of the glass substrate 11 is exposed during film formation, and a back space 42 located on the back surface side of the glass substrate 11. The cathode device 10 is disposed in the front space 41.

The cathode device 10 is erected in the film formation chamber 4 at a position farthest from a transfer port 4 a connected to the transfer chamber 3 .
As shown in FIG. 1, the substrate holding portion 13 (substrate holding device) is provided inside the rear space 42 .
The substrate holding portion 13 is capable of supporting the glass substrate 11 carried in through the transfer opening 4a.

The substrate holding unit 13 holds the glass substrate 11 so that the target 23 (described later) faces the processing surface 11a (film formation surface) of the glass substrate 11 during film formation. During film formation, the substrate holding unit 13 holds the glass substrate 11 at a position corresponding to the film formation port 4b.

The substrate holder 13 may include a swing shaft and a holder. The swing shaft extends, for example, substantially parallel to at least one of the transfer opening 4 a and the deposition opening 4 b at a lower position of the rear space 42. The holder is attached to the swing shaft and holds the rear surface of the glass substrate 11.
The gas introduction device introduces gas into the film formation chamber 4. The high vacuum exhaust device is a turbo molecular pump or the like that reduces the pressure inside the film formation chamber 4 to a high vacuum state.

<Cathode device 10>
Fig. 2 is a perspective view showing the cathode device 10 of the sputtering apparatus 1 according to this embodiment. Fig. 3 is a schematic diagram showing the positional relationship between the glass substrate and the configuration of the cathode device in the sputtering apparatus according to this embodiment.

2 to 6 and 8 to 11, an XYZ orthogonal coordinate system is adopted.
The Z direction is the vertical direction (the direction of gravity) and the longitudinal direction of the glass substrate 11. The Y direction is the thickness direction of the glass substrate 11 and the thickness direction of the yoke.
The X direction is the width direction of the glass substrate 11. In the following description, a plane parallel to the Z direction and the X direction may be referred to as a ZX plane.
Furthermore, the X direction corresponds to the swing direction, and the Z direction intersecting the X direction corresponds to the intersecting direction intersecting the swing direction.
The cathode device 10 is capable of oscillating the glass substrate 11 placed at a film formation position (plasma processing position) inside the film formation chamber 4 in the X direction.

The cathode device 10 includes a cathode box 10A and one cathode unit 22. The cathode unit 22 is disposed in the cathode box 10A as shown in FIG.
2 shows a vertical cathode device 10 in which the glass substrate 11 and the target 23 are vertically arranged. A down-deposition type cathode device can also be used as the cathode device 10. In a down-deposition type cathode device, the glass substrate 11 is placed below the target 23 so that the glass substrate 11 faces the horizontal direction. In this state, a film is formed on the glass substrate 11. Here, the horizontal direction is a direction parallel to the X direction and the Y direction.

<Cathode unit 22>
As shown in FIG. 3, the cathode unit 22 is disposed along the ZX plane facing the surface of the glass substrate 11 .
The cathode unit 22 is configured to emit sputtered particles toward the processing surface 11a of the glass substrate 11. In the cathode unit 22, a target 23, a backing plate 24, and a magnet unit MU (magnetic circuit) are arranged in this order in a direction from the glass substrate 11 toward the magnet scanning unit 29 (the opposite direction to the Y direction shown in FIG. 3). The magnet scanning unit 29 will be described later.

<Target 23>
FIG. 4 is a front view showing the positional relationship between the glass substrate, the target, and the magnet unit in the sputtering apparatus according to this embodiment.
The target 23 is formed in a flat plate shape parallel to the ZX plane facing the glass substrate 11. The target 23 is disposed so as to face the glass substrate 11. In other words, the target 23 has a surface 23a facing the glass substrate 11 as shown in Fig. 3. The target 23 is exposed at a position facing the glass substrate 11 on the surface of the cathode box 10A as shown in Fig. 2.
As shown in Fig. 3 and Fig. 4, the target 23 has a width larger than that of the glass substrate 11 in the Z direction. The target 23 also has a width larger than that of the glass substrate 11 in the X direction. An anode 28 is provided around the target 23. The anode 28 covers the backing plate 24 that protrudes outward beyond the ends of the target 23 in each of the X direction and the Z direction. In other words, the anode 28 is disposed between the glass substrate 11 and the backing plate 24 in the Y direction. The anode 28 is disposed around the entire circumference of the target 23 in the X direction and the Z direction.

<Backing plate 24>
The backing plate 24 is formed in a flat plate shape along the ZX plane facing the glass substrate 11. The backing plate 24 is bonded to the surface of the target 23 that does not face the glass substrate 11, that is, the surface opposite to the surface 23a of the target 23. A control unit 26 having a DC power supply is connected to the backing plate 24. DC power supplied from the DC power supply is supplied to the target 23 through the backing plate 24. As the power supply for the cathode, a DC power supply, a pulse power supply, or an RF power supply may be used instead of a DC power supply. In the cathode unit 22, the target 23 is arranged along the ZX plane facing the processing surface 11a of the glass substrate 11.

<Magnet unit MU>
The cathode unit 22 has a magnet unit MU. The magnet unit MU is composed of a plurality of magnets 25 and two auxiliary magnets 27. The magnet unit MU is disposed on the opposite side of the backing plate 24 to the target 23. In other words, the glass substrate 11 is disposed on the front side of the target 23, and the magnet unit MU is disposed on the back side of the target 23.

The magnet unit MU is a multiple magnet. In the magnet unit MU, the multiple magnets 25 are arranged parallel to each other and are spaced equally apart in the X direction. The multiple magnets 25 are erected in the Z direction so that the longitudinal direction of each of the multiple magnets 25 is parallel to the Z direction.
In the magnet unit MU according to this embodiment, for example, nine magnets 25 are arranged in the X direction. Specifically, the magnet unit MU has a first magnet 25F, a second magnet 25S, a third magnet 25T, a fourth magnet 25Y, a fifth magnet 25G, a sixth magnet 25R, a seventh magnet 25V, an eighth magnet 25E, and a ninth magnet 25N.
In this embodiment, the number of magnets 25 is nine. The number of magnets 25 can be set according to the area of the glass substrate 11, the area of the target 23, or the oscillation area of the magnets 25 described below. In other words, the magnet unit MU has N (N is an integer of 2 or more) magnets 25. In this case, the magnets to which the auxiliary magnet 27 is attached among the multiple magnets 25 are the (N-1)th magnet and the Nth magnet.
In the cathode unit 22 in this embodiment, a target 23 is fixed to the glass substrate 11. The cathode unit 22 is fixed to the film formation chamber 4.

Each of the nine magnets 25 forms a magnetron magnetic field on the surface 23a of the target 23 facing the glass substrate 11. Each of the nine magnets 25 is individually connected to the control unit 26. The control unit 26 is capable of controlling the magnetic field state generated in each of the nine magnets 25.

<Magnetic field generation regions MG1, MG2, MG3>
Each of the nine magnets 25 has three magnetic field generating regions aligned in the Z direction, namely, a first magnetic field generating region MG1, a plurality of second magnetic field generating regions MG2, and a third magnetic field generating region MG3. The first magnetic field generating region MG1 is one region in the Z direction. The third magnetic field generating region MG3 is the other region in the Z direction. The plurality of second magnetic field generating regions MG2 are regions between the first magnetic field generating region MG1 and the third magnetic field generating region MG3. In this embodiment, the number of the plurality of second magnetic field generating regions MG2 is 5. The number of the plurality of second magnetic field generating regions MG2 is not limited to this embodiment, and may be less than 5, or may be 6 or more.
Such a plurality of magnetic field generating regions MG1, MG2, MG3 may be continuously connected in the Z direction, or may be divided in the Z direction. In this embodiment, a structure in which a plurality of magnetic field generating regions MG1, MG2, MG3 are connected will be described.

Fig. 5 is an enlarged front view showing an end of the magnet unit MU of the sputtering apparatus according to this embodiment. Fig. 6 is an enlarged cross-sectional view showing an end of the magnet unit MU of the sputtering apparatus according to this embodiment. Also, Fig. 5 and Fig. 6 each show the configuration of the magnets and auxiliary magnets constituting the magnet unit MU. In Fig. 5, the first magnet 25F, the second magnet 25S, and the auxiliary magnet 27 are shown. In Fig. 5, the first magnet 25F and the auxiliary magnet 27 are shown. Fig. 5 shows the first magnetic field generation region MG1 shown in Fig. 4 and a part of the second magnetic field generation region MG2.
In the following description, the auxiliary magnets provided in the first magnet 25F will be described, and a description of the auxiliary magnets provided in the ninth magnet 25N may be omitted.
When describing a structure common to the first magnet 25F to the ninth magnet 25N, the first magnet 25F to the ninth magnet 25N may be referred to simply as magnet 25.

Each of the first magnet 25F to the ninth magnet 25N has a yoke 31, an auxiliary yoke 31d, a peripheral magnet portion 32, and a central magnet portion 33, as shown in Figures 4 to 6.

<Yoke 31 and auxiliary yoke 31d>
The yoke 31 is a magnet base (magnetic body) having a substantially rectangular flat plate shape when viewed in the Y direction. The yoke 31 has a central region 31C on a surface 31S of the yoke 31.
The auxiliary yoke 31d is a portion adjacent to the yoke 31. The auxiliary yoke 31d is made of a magnetic material or a dielectric material.
Each of the multiple magnets 25 that make up the magnet unit MU is disposed on a yoke 31 .

<Peripheral magnet portion 32 and central magnet portion 33>
The peripheral magnet portion 32 is spaced apart from the central magnet portion 33 on the plane of the yoke 31. The peripheral magnet portion 32 is a substantially elliptical ring magnet provided so as to surround the central magnet portion 33.
The central magnet portion 33 is a linear composite magnet body. The longitudinal direction of the composite magnet body corresponds to the Z direction. The central magnet portion 33 is disposed at a central position 31CP of the central region 31C of the yoke 31 in the X direction.

The central magnet portion 33 and the peripheral magnet portion 32 constitute a magnetic circuit formed on the surface 31S of the yoke 31. This magnetic circuit is disposed so as to overlap the backing plate 24.
The central magnet portion 33 and the peripheral magnet portion 32 are parallel to each other in the central portion MP in the Z direction, which is the longitudinal direction of the magnet 25. The region where the central magnet portion 33 and the peripheral magnet portion 32 are parallel to each other is the parallel region PR.

The central magnet portion 33 is divided into a plurality of magnets in the Z direction in which the central magnet portion 33 extends. In other words, the central magnet portion 33 is composed of a plurality of divided magnets. The central magnet portion 33 is formed by arranging the plurality of divided magnets continuously in the Z direction.
Similarly, the peripheral magnet portion 32 is divided into a plurality of magnets in the Z direction in which the peripheral magnet portion 32 extends. In other words, the peripheral magnet portion 32 is composed of a plurality of divided magnets. The peripheral magnet portion 32 is formed by arranging the plurality of divided magnets continuously in the Z direction.
5 and 6, the peripheral magnet portion 32 has an end peripheral magnet portion 32a located at the end in the Z direction. The end peripheral magnet portion 32a extends in the X direction. The peripheral magnet portion 32 also has a first peripheral magnet portion 32b. The first peripheral magnet portion 32b is adjacent to the end peripheral magnet portion 32a in the Z direction. The first peripheral magnet portion 32b extends in the Z direction, which is the longitudinal direction.
The end peripheral magnet portion 32a may have a portion extending in the Z direction at a position adjacent to the first peripheral magnet portion 32b. In other words, as shown in Fig. 5, at one end of the magnet 25 in the Z direction, the end peripheral magnet portion 32a may have a substantially C-shape. Also, at the other end of the magnet 25 in the Z direction, the end peripheral magnet portion 32a may have a substantially inverted C-shape.

The peripheral magnet portion 32 has a second peripheral magnet portion 32c extending in the Z direction. The second peripheral magnet portion 32c is adjacent to the first peripheral magnet portion 32b in the longitudinal direction. The second peripheral magnet portion 32c is located on the opposite side of the first peripheral magnet portion 32b from the end peripheral magnet portion 32a in the Z direction.
The peripheral magnet portion 32 has a third peripheral magnet portion 32d extending in the Z direction. The third peripheral magnet portion 32d is adjacent to the second peripheral magnet portion 32c in the longitudinal direction. The third peripheral magnet portion 32d is located on the opposite side of the second peripheral magnet portion 32c from the first peripheral magnet portion 32b in the Z direction.
The peripheral magnet portion 32 has a fourth peripheral magnet portion 32e extending in the Z direction. The fourth peripheral magnet portion 32e is adjacent to the third peripheral magnet portion 32d in the longitudinal direction. The fourth peripheral magnet portion 32e is located on the opposite side of the third peripheral magnet portion 32d from the second peripheral magnet portion 32c in the Z direction.
The peripheral magnet portion 32 has a fifth peripheral magnet portion 32f extending in the Z direction. The fifth peripheral magnet portion 32f is adjacent to the fourth peripheral magnet portion 32e in the longitudinal direction. The fifth peripheral magnet portion 32f is located on the opposite side of the fourth peripheral magnet portion 32e from the third peripheral magnet portion 32d in the Z direction.

Furthermore, the peripheral edge magnet portion 32 has a divided portion (see FIG. 4) extending in the Z direction. The divided portion is adjacent to the fifth peripheral edge magnet portion 32f. The divided portion of the peripheral edge magnet portion 32 is located in the parallel region PR.
In the peripheral magnet portion 32, each of the end peripheral magnet portion 32a, the first peripheral magnet portion 32b, the second peripheral magnet portion 32c, the third peripheral magnet portion 32d, and the fourth peripheral magnet portion 32e is a permanent magnet.
In the peripheral magnet portion 32, each of the end peripheral magnet portion 32a, the first peripheral magnet portion 32b, the second peripheral magnet portion 32c, the third peripheral magnet portion 32d, and the fourth peripheral magnet portion 32e may be configured to generate a different magnetic field independently, or may be configured to generate a magnetic field of equal strength.
In the peripheral magnet portion 32, the fifth peripheral magnet portion 32f and a divided portion extending further in the Z direction from the fifth peripheral magnet portion 32f are permanent magnets.

As shown in Figures 5 and 6, the central magnet portion 33 has a first coil portion 35b. The first coil portion 35b is located at the end in the Z direction, which is the longitudinal direction. The first coil portion 35b is adjacent to the end peripheral magnet portion 32a in the Z direction. The first coil portion 35b is composed of a coil wire wound around an axis parallel to the Y direction, which is the direction perpendicular to the paper surface in Figure 5. Specifically, the first coil portion 35b has a first core portion 34b parallel to the Y direction, and is composed of a coil wire wound around the first core portion 34b. The first core portion 34b is located at the center of the coil.
The first core portion 34b is a permanent magnet. The first coil portion 35b is disposed at a position that coincides with the first peripheral magnet portion 32b in the Z direction. The center of the first core portion 34b is disposed at a position that is substantially the same as the center position of the first peripheral magnet portion 32b in the Z direction. The first coil portion 35b is not in contact with the end peripheral magnet portion 32a and the first peripheral magnet portion 32b.

The central magnet portion 33 has a second coil portion 35c adjacent to the first coil portion 35b. The second coil portion 35c is located on the opposite side of the end peripheral magnet portion 32a with respect to the first coil portion 35b in the Z direction. The second coil portion 35c has a second core portion 34c located at the center of the second coil portion 35c. The second core portion 34c is a permanent magnet. The second coil portion 35c is located at a position that coincides with the second peripheral magnet portion 32c in the Z direction. The center of the second core portion 34c is located at approximately the same position as the center position of the second peripheral magnet portion 32c in the Z direction. The second coil portion 35c is not in contact with the first coil portion 35b and the second peripheral magnet portion 32c.

The central magnet portion 33 has a third coil portion 35d adjacent to the second coil portion 35c. The third coil portion 35d is located on the opposite side of the first coil portion 35b with respect to the second coil portion 35c in the Z direction. The third coil portion 35d has a third core portion 34d located at the center of the third coil portion 35d. The third core portion 34d is a permanent magnet. The third coil portion 35d is located at a position that coincides with the third peripheral magnet portion 32d in the Z direction. The center of the third core portion 34d is located at approximately the same position as the central position of the third peripheral magnet portion 32d in the Z direction. The third coil portion 35d is not in contact with the second coil portion 35c and the third peripheral magnet portion 32d.

The central magnet portion 33 has a fourth coil portion 35e adjacent to the third coil portion 35d. The fourth coil portion 35e is located on the opposite side of the second coil portion 35c with respect to the third coil portion 35d in the Z direction. The fourth coil portion 35e has a fourth core portion 34e located at the center of the fourth coil portion 35e. The fourth core portion 34e is a permanent magnet. The fourth coil portion 35e is located at a position that coincides with the fourth peripheral magnet portion 32e in the Z direction. The center of the fourth core portion 34e is located at approximately the same position as the central position of the fourth peripheral magnet portion 32e in the Z direction. The fourth coil portion 35e is not in contact with the third coil portion 35d and the fourth peripheral magnet portion 32e.

The central magnet portion 33 has a fifth magnet portion 37 adjacent to the fourth coil portion 35e. The fifth magnet portion 37 is located on the opposite side of the third coil portion 35d with respect to the fourth coil portion 35e in the Z direction. The fifth magnet portion 37 is a permanent magnet. The fifth magnet portion 37 is arranged at a position that coincides with the fifth peripheral magnet portion 32f in the Z direction. The fifth magnet portion 37 is arranged approximately parallel to the fifth peripheral magnet portion 32f. As shown in FIG. 5, the fifth magnet portion 37 is arranged at approximately the same position as the first core portion 34b to the fourth core portion 34e in the X direction. In other words, the first core portion 34b to the fourth core portion 34e and the fifth magnet portion 37 are aligned in the Z direction. The fifth magnet portion 37 has approximately the same length as the fifth peripheral magnet portion 32f in the Z direction. The fifth magnet portion 37 is not in contact with the fourth coil portion 35e and the fifth peripheral magnet portion 32f.

Furthermore, the central magnet portion 33 has a divided portion extending in the Z direction. The divided portion is adjacent to the fifth magnet portion 37. The divided portion of the central magnet portion 33 is located in the parallel region PR.
In the central magnet portion 33, the first coil portion 35b, the second coil portion 35c, the third coil portion 35d, and the fourth coil portion 35e are each connected to a control portion 26 (see FIG. 3) having a power supply function. In other words, the control portion 26 functions as a power source.
In the central magnet section 33, currents are independently supplied to the first coil section 35b, the second coil section 35c, the third coil section 35d, and the fourth coil section 35e, which allows the first coil section 35b, the second coil section 35c, the third coil section 35d, and the fourth coil section 35e to generate magnetic fields different from one another.

Furthermore, the central magnet portion 33 has a long core portion 36 extending in the Z direction.
In the central magnet portion 33, the first core portion 34b, the second core portion 34c, the third core portion 34d, and the fourth core portion 34e each have an end portion located on the opposite side to the yoke 31 in the Y direction. These four ends are adjacent to the long core portion 36. The long core portion 36 is disposed at approximately the same position in the X direction as the fifth magnet portion 37. In other words, the long core portion 36 and the fifth magnet portion 37 are aligned in the Z direction. The long core portion 36 is a permanent magnet or a magnetic material.
In the central magnet portion 33, the long core portion 36 forms a magnetic circuit with the end peripheral magnet portion 32a, the first peripheral magnet portion 32b, the second peripheral magnet portion 32c, the third peripheral magnet portion 32d, and the fourth peripheral magnet portion 32e of the peripheral magnet portion 32.
In the central magnet section 33, the first coil section 35b to the fourth coil section 35e are configured to be supplied with current independently, which makes it possible to adjust the magnetic field strength and distribution of the generated magnetic field in the magnetic circuit formed by the long core section 36 and the peripheral magnet section 32.

In the above example, the first coil portion 35b to the fourth coil portion 35e constituting the central magnet portion 33 are electromagnets, but the configuration of the central magnet portion 33 is not limited to an electromagnet. A permanent magnet corresponding to the long core portion 36 may also be used as the central magnet portion 33. Although FIG. 5 shows one end of the magnet 25 in the Z direction, the same configuration as that of the one end of the magnet 25 described above may also be adopted for the other end of the magnet 25.

<Magnet Scanning Unit 29>
The cathode device 10 includes a magnet scanning unit 29. The magnet scanning unit 29 moves the magnet unit MU in a swinging direction, which is one scanning direction. The swinging direction is an X direction perpendicular to the Z direction in which the multiple magnet units MU are erected. In other words, the magnet scanning unit 29 can move the magnet unit MU and the glass substrate 11 back and forth relative to each other.
The magnet scanner 29 changes the position of the magnet unit MU with respect to the target 23. The magnet scanner 29 is capable of swinging the magnet unit MU without changing the relative positional relationship of the multiple magnets 25 that constitute the magnet unit MU.
That is, the magnet unit MU can be moved (oscillated) by the magnet scanning unit 29 relative to the target 23 in parallel to the particle emission surface of the target 23 .

The magnet scanning unit 29 is composed of, for example, rails, rollers, and multiple motors. The rails extend in the scanning direction. The rollers are attached to each of the two ends of the cathode unit 22 in the X direction. The motors rotate each of the rollers. The magnet scanning unit 29 may be composed of an LM guide or the like having rails extending in the scanning direction.
The rails of the magnet scanning unit 29 have a width in the scanning direction (X direction) that is equal to or greater than that of the target 23. Note that the configuration of the magnet scanning unit 29 is not limited to the above-mentioned configuration as long as the magnet scanning unit 29 can move the multiple magnets 25 as a unit in the scanning direction. Configurations other than those having rails, rollers, and a motor may be applied to the magnet scanning unit 29.

<Auxiliary magnet 27>
4, the two auxiliary magnets 27 are disposed at both ends of the magnet unit MU in the X direction. In other words, one auxiliary magnet 27 (first auxiliary magnet) is disposed at one end (first end) of the magnet unit MU in the X direction. The other auxiliary magnet 27 (second auxiliary magnet) is disposed at the other end (second end) of the magnet unit MU in the X direction.
The auxiliary magnet 27 is disposed on the opposite side of the glass substrate 11 with respect to the target 23. The auxiliary magnet 27 is attached and fixed to a yoke 31 that forms a magnetic circuit in each of the first magnet 25F and the ninth magnet 25N.

In this embodiment, the magnet unit MU is configured with an arrangement of nine magnets 25. A first magnet 25F is arranged at one end side (first end side, first arrangement end) of the magnet unit MU in the X direction. A ninth magnet 25N is arranged at the other end side (second end side, second arrangement end) of the magnet unit MU in the X direction.
In this configuration, one auxiliary magnet 27 is provided at the end (outer edge) of the first magnet 25F opposite the second magnet 25S in the X direction, and the other auxiliary magnet 27 is provided at the end (outer edge) of the ninth magnet 25N opposite the eighth magnet 25E in the X direction.
In other words, one auxiliary magnet 27 is located at a swing end, which is one end of the magnet unit MU in the X direction. Also, the other auxiliary magnet 27 is located at a swing end, which is the other end of the magnet unit MU in the X direction. That is, the auxiliary magnets 27 are disposed at the outer edge of the magnet located at the first swing end of the magnet unit MU at the end in the X direction and at the outer edge of the magnet located at the second swing end.

In other words, the auxiliary magnet 27 has a function of tilting the magnetic field lines formed by the magnet 25 located at the first oscillation end toward the second oscillation end along the magnet 25 located at the first oscillation end among the multiple magnets 25. The auxiliary magnet 27 is disposed on the opposite side of the first oscillation end to the second oscillation end along the magnet 27 located at the first oscillation end.

As shown in Figures 4 to 6, the auxiliary magnet 27 is a linear magnet parallel to the peripheral magnet portion 32. The auxiliary magnet 27 extends in the Z direction. The auxiliary magnet 27 has the same polarity as the peripheral magnet portion 32 closest to the auxiliary magnet 27. In other words, as shown in Figure 6, if the peripheral magnet portion 32 is an N pole, the auxiliary magnet 27 has the same polarity as the peripheral magnet portion 32, i.e., an N pole.
The auxiliary magnets 27 are located on the outermost ends of the magnet unit MU in the X direction. That is, the auxiliary magnets 27 are provided adjacent to the outermost peripheral magnet portion 32 of the first magnet 25F in the X direction. The auxiliary magnets 27 are also provided adjacent to the outermost peripheral magnet portion 32 of the ninth magnet 25N in the X direction. In other words, the auxiliary magnets 27 are not provided on the second magnets 25S to the eighth magnets 25E.
In other words, the auxiliary magnets 27 are provided only at positions corresponding to the ends of the target 23 in the X direction.

The auxiliary magnet 27 has the same length as the peripheral magnet portion 32 closest to the auxiliary magnet 27. In other words, the Z-direction dimension of the auxiliary magnet 27 is approximately equal to the Z-direction dimension of each of the first magnet 25F and the ninth magnet 25N located at both ends of the magnet unit MU in the X-direction. Here, the Z-direction dimension of the auxiliary magnet 27 is approximately plus or minus 5 mm relative to the Z-direction dimension of each of the first magnet 25F and the ninth magnet 25N.

The auxiliary magnet 27 is a magnet having a rectangular shape in cross section, similar to the peripheral magnet portion 32 closest to the auxiliary magnet 27. The auxiliary magnet 27 has the same cross-sectional shape as the peripheral magnet portion 32 over its entire length in the Z direction. The auxiliary magnet 27 is very close in the X direction to the peripheral magnet portion 32 closest to the auxiliary magnet 27. Specifically, as shown in FIG. 6, the auxiliary magnet 27 can be in very close contact in the X direction with the peripheral magnet portion 32 closest to the auxiliary magnet 27, or can be spaced a predetermined distance apart in the X direction, as described below.

The auxiliary magnet 27 has a protrusion 27a. In this embodiment, the protrusion 27a is a portion where a convex portion protruding toward the target 23 continues in the Z direction with respect to the ZX plane formed by the end face 30 (magnetic pole plane) of the peripheral magnet portion 32 of the magnet 25. In other words, the protrusion 27a extends in the Z direction and protrudes from the ZX plane in the Y direction. In the following description, the end face 30 may be referred to as the magnetic pole plane 30.

The tip of the protrusion 27a may protrude further toward the target 23 than the magnetic pole plane 30. The tip of the protrusion 27a may be in the same position as the magnetic pole plane 30 in the Y direction. The tip of the protrusion 27a may be farther away from the target 23 than the magnetic pole plane 30.

The auxiliary magnet 27 is inclined with respect to the magnetic pole plane 30. In other words, as shown in FIG. 6, the end face of the auxiliary magnet 27 that becomes the magnetic pole may be inclined at an angle θ with respect to the ZX plane. Here, the angle θ is the angle of inclination with respect to the Y direction that is the normal to the surface 23a of the target 23. In other words, the auxiliary magnet 27 rotates by an angle θ around an axis that is parallel to the Z direction. This angle θ can also be referred to as the "magnet inclination angle."

The "magnet tilt angle" will now be described in more detail.
The auxiliary magnet 27 has a first magnetic pole face 27F and a second magnetic pole face 27S located on the opposite side to the first magnetic pole face 27F. The first magnetic pole face 27F faces the backing plate 24. In other words, the first magnetic pole face 27F is exposed to a space SP between the backing plate 24 and the magnet 25. The second magnetic pole face 27S is a surface that comes into contact with an auxiliary yoke 31d described later.
The center position of the first magnetic pole face 27F, i.e., the center position between the first corner C1 and the second corner C2, is indicated by reference symbol 27Q. The center position of the second magnetic pole face 27S, i.e., the center position between the third corner C3 and the fourth corner C4, is indicated by reference symbol 27R.
In the auxiliary magnet 27, a line perpendicular to the first magnetic pole face 27F and the second magnetic pole face 27S and passing through the central positions 27Q and 27R is the magnetic tilt line 27D. In other words, a line passing through the central position 27R and perpendicular to the second magnetic pole face 27S is the magnetic tilt line 27D. The angle θ between the magnetic tilt line 27D and the Y direction that is the normal to the surface 23a of the target 23 is the magnetic tilt angle. The magnetic tilt line 27D extending from the second magnetic pole face 27S toward the first magnetic pole face 27F faces the swing region SW of the magnet 25. The angle θ is within a range of 0 deg to 90 deg, more preferably within a range of 0 deg to 60 deg, further within a range of 0 deg to 45 deg, or within a range of 0 deg to 30 deg.

<Modifications of the auxiliary magnet 27>
FIG. 27 shows a modified example of the auxiliary magnet 27.
The auxiliary magnet 27 shown in Fig. 27 has a pentagonal shape in cross section. The auxiliary magnet 27 has a first magnetic pole face 27F having an apex, and a second magnetic pole face 27S. The first magnetic pole face 27F has two faces. The apex connecting the two faces corresponds to a central position 27Q. The second magnetic pole face 27S has a central position 27R. A protrusion 27a is formed at the central position 27Q of the first magnetic pole face 27F of the auxiliary magnet 27. The protrusion 27a has a convex shape.
27, a line that is perpendicular to the second magnetic pole face 27S and passes through the central positions 27Q and 27R is a magnet tilt line 27D. The angle θ between the magnet tilt line 27D and the Y direction that is the normal to the surface 23a of the target 23 is the magnet tilt angle. The magnet tilt line 27D that extends from the second magnetic pole face 27S toward the first magnetic pole face 27F is oriented toward the swing region SW of the magnet 25.

The magnetic strength of the auxiliary magnet 27 is equal to or smaller than the magnetic strength of the peripheral magnet portion 32 closest to the auxiliary magnet 27. Specifically, the magnetic strength of the auxiliary magnet 27 can be within a range of 1/2 to 3/4, or 1/2 to 1/3, of the magnetic strength of the peripheral magnet portion 32 closest to the auxiliary magnet 27. The magnetic strength of the peripheral magnet portion 32 can be 1 to 1.5 times, or 1.1 to 1.4 times, for example, approximately 1.39 times, of the magnetic strength of the auxiliary magnet 27.

As shown in FIG. 6 , the auxiliary magnet 27 is fixed to the yoke 31 via an auxiliary yoke 31d. The auxiliary yoke 31d is adjacent to an end of the yoke 31 in the X direction. The auxiliary yoke 31d may be formed integrally with the yoke 31. In this case, the auxiliary yoke 31d is formed of the same material as the yoke 31. The auxiliary yoke 31d is made of a magnetic or dielectric material. The auxiliary yoke 31d and the auxiliary magnet 27 are removable from the yoke 31.
The auxiliary magnet 27 is fixed to the auxiliary yoke 31d by the fixing member 27g so as to obtain the above-mentioned predetermined angle θ. This causes the second magnetic pole surface 27S of the auxiliary magnet 27 to abut against the auxiliary yoke 31d. This results in a magnetic circuit that combines the magnetic circuit formed by the central magnet portion 33, the peripheral magnet portion 32, and the yoke 31 with the magnetic circuit formed by the auxiliary magnet 27 and the auxiliary yoke 31d.

In the cathode unit 22 in this embodiment, as shown in Figures 3 and 4, sputter particles are emitted from the target to form a film on the glass substrate 11. At this time, the magnet scanning unit 29 moves the magnet unit MU back and forth between the oscillation end Reverse and the oscillation end Forward. Here, in this embodiment, the oscillation end Forward is an example of the "first oscillation end". The oscillation end Reverse is an example of the "second oscillation end". Note that when the oscillation end Forward is the "second oscillation end", the oscillation end Reverse becomes the "first oscillation end".

In the cathode unit 22, the magnet scanning unit 29 moves the magnet unit MU, which is a multiple magnet composed of multiple magnets 25, all together. Specifically, as shown in FIG. 3, the magnet scanning unit 29 first moves the magnet unit MU from the center position center in the swing direction (X direction) to the right to the swing end Forward. Then, the magnet scanning unit 29 moves the magnet unit MU from the swing end Forward to the left via the center position center to the swing end Reverse. Then, the magnet scanning unit 29 moves the magnet unit MU from the swing end Reverse to the center position center. One scan is completed by such a series of movement operations. In the cathode unit 22, this scan is repeated multiple times.

At the same time, in each of the first magnet 25F to the ninth magnet 25N that make up the magnet unit MU, a current is applied from the control unit 26, which functions as a power source, to the first coil portion 35b, the second coil portion 35c, the third coil portion 35d, and the fourth coil portion 35e of the central magnet portion 33 at the end in the Z direction. This causes the magnet 25 to generate a magnetic field. At this time, a magnetic circuit is formed by the central magnet portion 33, the peripheral magnet portion 32, and the yoke 31. Furthermore, in the first magnet 25F and the ninth magnet 25N, a magnetic circuit is also formed by the auxiliary magnet 27 and the auxiliary yoke 31d.

Next, we will explain film formation on the glass substrate 11 in the sputtering apparatus 1 of this embodiment.

First, the glass substrate 11 is carried into the interior of the sputtering apparatus 1 from the outside. Next, the glass substrate 11 is placed on a positioning member in the load/unload chamber 2. This aligns the glass substrate 11 so that it is placed at a predetermined position on the positioning member (see FIG. 1).

Next, the glass substrate 11 placed on the positioning member of the load/unload chamber 2 is supported by the robot hand of the transport device 3a. The glass substrate 11 is removed from the load/unload chamber 2. The glass substrate 11 is then transported to the film formation chamber 4 via the transport chamber 3.

At this time, in the film formation chamber 4, the swing axis of the substrate holding part 13 is rotated by the drive part, and the substrate holding part 13 is placed in a horizontal placement position. Furthermore, the lift pins are placed in a preparation position protruding upward from the substrate holding part 13 by a lift pin moving part (not shown).
In this state, the glass substrate 11 that has reached the film formation chamber 4 is inserted above the substrate holding portion 13 by the transport device 3a.

Next, the robot hand of the transport device 3a approaches the substrate holding unit 13, and the glass substrate 11 is placed on the lift pins with the glass substrate 11 aligned at a predetermined position within the surface of the substrate holding unit 13. The arm of the transport robot 3a then retreats to the transport chamber 3. The lift pins then descend, and the glass substrate 11 is supported on the substrate holding unit 13.

Next, the oscillation axis is rotated, and the glass substrate 11, held by the substrate holder 13, rises to reach the vertical processing position. As a result, the film formation port 4b is almost blocked by the glass substrate 11, and the glass substrate 11 is held at the film formation position. In this state, a plasma is generated between the surface 23a of the target 23 and the glass substrate 11 due to the magnetic field generated by the magnet unit MU. The target 23 is sputtered, and the material that constitutes the target 23 adheres to the surface of the glass substrate 11. As a result, a film formation process is performed on the glass substrate 11.

When the film formation process is completed, the oscillation axis is rotated so that the glass substrate 11 reaches a horizontal placement position while being held by the substrate holder 13 .
After the film formation process, the glass substrate 11 is removed from the film formation chamber 4 by the transfer device 3a. Then, the glass substrate 11 is removed from the load/unload chamber 2 via the transfer chamber 3.

The function of the auxiliary magnet 27 in this embodiment will be described below.
Fig. 7 is a schematic diagram of the target surface for explaining the function of the auxiliary magnet 27. Fig. 8 is a schematic diagram for explaining the function of the auxiliary magnet 27, showing the electron tracking state when the auxiliary magnet 27 is not present. Fig. 9 is a schematic diagram for explaining the function of the auxiliary magnet 27, showing the direction of the magnetic field lines when the auxiliary magnet 27 is not present. First, the case when the auxiliary magnet 27 is not present will be described.

As described above, a magnetic field formed by the magnet unit MU having multiple magnets 25 generates plasma between the surface 23a of the target 23 and the glass substrate 11. In this state, a film is formed on the surface of the glass substrate 11 under the sputtering conditions described below.

9, during sputtering, magnetic field lines are formed from the N-pole peripheral magnet portion 32 to the S-pole central magnet portion 33. The central magnet portion 33, the peripheral magnet portion 32, and the yoke 31 form a magnetic circuit.
This causes the electrons to be tracked along the magnetic field lines, as shown in FIG.

At this time, at the position of the oscillation end of the oscillation region SW of the target 23, as shown in Fig. 9, the magnetic field lines generated from the N-pole peripheral magnet portion 32 extend toward the anode 28 close to the magnet 25. The magnetic field line density decreases on the surface 23a of the target 23. That is, as shown in Fig. 8, the density of tracked electrons becomes insufficient, and the plasma density becomes insufficient. As a result, as shown in Fig. 7, no erosion region is formed on the surface 23a of the target 23, and non-erosion regions E1 are formed at both ends in the X direction.
In FIG. 9, the magnetic field lines from the N-pole peripheral magnet portion 32 are inclined leftward in the X direction toward the anode 28 as they move in the Y direction.

Magnetic lines of force are also formed from the north pole peripheral magnet portion 32 to the south pole central magnet portion 33. These magnetic lines of force cause electrons to circulate around the central magnet portion 33, which is surrounded by the peripheral magnet portion 32, on the surface 23a of the target 23. At this time, the electrons moving in the Z direction along the end of the longitudinal direction of the magnet 25, that is, along the central magnet portion 33, slow down in their moving speed and increase in density near the region where they bend in the X direction along the end peripheral magnet portion 32a.

As a result, density decreases at the position where electrons bend from the X direction to the Z direction along the peripheral magnet portion 32a from the end peripheral magnet portion 32. As a result, erosion on the surface 23a of the target 23 decreases, and a non-erosion region E2 is formed. This phenomenon occurs in the two magnets 25 at both ends in the X direction, as the directions of the electrons circulating around the central magnet portion 33 are reversed in adjacent magnets 25, canceling each other out. For this reason, it occurs in the two magnets 25 at both ends in the X direction. Moreover, in each of the magnets 25 located at both ends of the magnet unit MU in the X direction, the positions where the non-erosion region E2 is formed are opposite in the Z direction.

As a result, in the absence of the auxiliary magnet 27, as shown in FIG. 7, non-erosion regions E2 are formed in two diagonal corners of the target 23. In FIG. 7, non-erosion regions are formed near the lower left and upper right corners. In addition, when non-erosion regions E1 and E2 are formed in this way, non-erosion region E3 is likely to be formed in addition to the two diagonal corners. This is because when a non-erosion region is formed, the applied supply power is not consumed in plasma generation and becomes surplus. This surplus power is redistributed to a region other than the two diagonal non-erosion regions, or is absorbed as an overall voltage (power) fluctuation. Therefore, it is thought that the plasma generation conditions fluctuate like voltage fluctuations.

Fig. 10 is a diagram for explaining the function of the auxiliary magnet 27, and is a schematic diagram showing the electron tracking state when the auxiliary magnet 27 is present. Fig. 11 is a diagram for explaining the function of the auxiliary magnet 27, and is a schematic diagram showing the direction of the magnetic field lines when the auxiliary magnet 27 is present.
Next, the case where the auxiliary magnet 27 is provided will be described.

11, during sputtering, magnetic field lines are formed from the N-pole peripheral magnet portion 32 to the S-pole central magnet portion 33. At this time, a magnetic circuit is formed including the central magnet portion 33, the peripheral magnet portion 32, and the yoke 31, as well as the auxiliary magnet 27 and the auxiliary yoke 31d.
This causes the electrons to be tracked along the magnetic field lines, as shown in FIG.

At this time, at the position that is the oscillation end of the oscillation region of the target 23, as shown in Figure 11, the magnetic field lines from the N-pole peripheral magnet portion 32 are inclined to the right in the Y direction perpendicular to the magnetic pole plane 30 or in the X direction so that they are not directed toward the anode 28 by the magnetic field lines from the auxiliary magnet 27.
As a result, the magnetic field line density does not decrease on the surface 23a of the target 23. In other words, the tracked electron density is sufficiently maintained, and the plasma density is sufficiently maintained, as shown in Fig. 10. As a result, on the surface 23a of the target 23 shown in Fig. 7, the non-erosion regions E1 formed in each of the magnets 25 located at both ends of the magnet unit MU in the X direction can be suppressed.

In addition, in the structure including the auxiliary magnet 27, a magnetic circuit is formed including the central magnet portion 33, the peripheral magnet portion 32, the yoke 31, the auxiliary magnet 27, and the auxiliary yoke 31d. Therefore, due to the magnetic field lines from the N-pole peripheral magnet portion 32 to the S-pole central magnet portion 33, electrons circulate around the central magnet portion 33 surrounded by the peripheral magnet portion 32 on the surface 23a of the target 23. At the end of the electron movement direction in the longitudinal direction of the magnet 25, the electrons that have moved in the Z direction along the central magnet portion 33 bend in the X direction along the end peripheral magnet portion 32a, but the electron movement speed does not slow down, and the increase in density is suppressed.

As a result, no decrease in density occurs at the position where the electrons bend from the X direction to the Z direction along the peripheral magnet portion 32a from the end peripheral magnet portion 32. As a result, in the two magnets 25 located at both ends of the magnet unit MU in the X direction, the formation of the non-erosion region E2 on the surface 23a of the target 23 is suppressed as shown in FIG. 22. In other words, the auxiliary magnets 27 are adjacent to each other in the two magnets 25 located at both ends of the magnet unit MU in the X direction, so that the formation of the non-erosion region E2 at two diagonal locations can be suppressed. As a result, when the voltage fluctuation is suppressed and the formation of the non-erosion regions E1 and E2 is suppressed, it is possible to suppress the tendency of the non-erosion region E3 to be formed in locations other than the two diagonal locations.

According to the sputtering device 1 of this embodiment, the auxiliary magnet 27 prevents the magnetic field lines generated from the magnet 25 at the swing end of the magnet 25 from being directed toward the anode 28. This makes it possible to reduce the amount of electrons absorbed by the anode 28. In other words, the magnetic field lines generated from the magnet 25 can be made to be in the Y direction or inclined to the right in FIG. 10 from the Y direction, that is, inclined inward toward the target contour from the thickness direction of the target. This makes it possible to reduce the non-erosion regions E1, E2, and E3.

In other words, by reducing the occurrence of non-erosion regions E1, E2, and E3, it is possible to suppress the occurrence of particles. In other words, the formation of erosion-non-erosion boundary regions, which cause particles to be generated because the boundary between the non-erosion region and the erosion region becomes unclear, is reduced.

Furthermore, by suppressing the occurrence of non-erosion regions E1 to E3, the supply power is not redistributed, thereby suppressing partial fluctuations in plasma generation conditions due to voltage fluctuations, etc., and suppressing particle generation and variations in film thickness distribution and film quality characteristic distribution, etc.

FIG. 12 is a graph showing the relationship between the oscillation position of the magnet 25 and the supply voltage (discharge voltage) from the plasma generating power supply in this embodiment.
Here, the magnet unit MU having a plurality of magnets 25 is made to make two round trips (two scans). That is, the magnet unit MU starts from the swing end Forward shown in FIG. 12 and moves to the swing end Reverse. Then, the magnet unit MU moves in the opposite direction and returns to the swing end Forward. Furthermore, the magnet unit MU starts from the swing end Forward and moves to the swing end Reverse. Then, the magnet unit MU moves in the opposite direction and returns to the swing end Forward. In FIG. 12, the case where the auxiliary magnet 27 is provided is shown by a solid line, and the case where the auxiliary magnet 27 is not provided is shown by a dashed line.

As shown in FIG. 12, it can be seen that by providing the auxiliary magnet 27, the fluctuation range of the discharge voltage due to the swing position is reduced compared to the case where the auxiliary magnet 27 is not provided.
Also, as shown in FIG. 12, it can be seen that the provision of the auxiliary magnet 27 suppresses spike fluctuations in the discharge voltage compared to the case where the auxiliary magnet 27 is not provided.

Figure 13 shows the thickness distribution of a film formed by sputtering under condition 0 using the auxiliary magnet 27 in the sputtering device 1 according to this embodiment. Figure 14 shows the film resistance (sheet resistance) Rs distribution of a film formed by sputtering under condition 0 using the auxiliary magnet 27 in the sputtering device 1 according to this embodiment.

As shown in FIG. 13, by providing the auxiliary magnets 27, the film thickness distribution could be kept within the range of ±4.2%, compared to the case where the auxiliary magnets 27 were not provided.
As shown in FIG. 14, by providing the auxiliary magnet 27, the distribution of the film resistance value Rs could be kept within the range of ±12.5%, compared to the case where the auxiliary magnet 27 was not provided.

In contrast, Figures 15 to 20 show the case where the sputtering film formation conditions are changed under three conditions when the auxiliary magnet 27 is not used. Figure 15 shows the film thickness distribution under condition 1. Figure 16 shows the film resistance value distribution under condition 1. Figure 17 shows the film thickness distribution under condition 2. Figure 18 shows the film resistance value distribution under condition 2. Figure 19 shows the film thickness distribution under condition 3. Figure 20 shows the film resistance value distribution under condition 3.

The results of conditions 1 to 3 show that there is a trade-off between film thickness distribution and film resistance distribution, and as shown in Figure 21, it has not been possible to achieve a distribution below the inverse proportional line connecting the three conditions in the past. In contrast, under condition 0 corresponding to Figures 13 and 14, where the auxiliary magnet 27 was used, it was possible to simultaneously reduce the film thickness distribution and film resistance distribution compared to the case without the auxiliary magnet 27.

The arrangement and dimensions of the auxiliary magnet 27 and magnet 25 are explained below.

As shown in Figure 6, the auxiliary magnet 27 and the peripheral magnet portion 32 closest to the auxiliary magnet 27 are positioned. Here, the inclination angle between the Y direction and the magnet inclination line 27D is θ. The distance in the X direction between the auxiliary magnet 27 and the peripheral magnet portion 32 closest to the auxiliary magnet 27 is Wx. The distance in the Y direction between the auxiliary magnet 27 and the magnetic pole plane 30 is Wy.

Here, angle θ is the inclination angle between the axial direction of the north and south poles of the auxiliary magnet 27 and the Y direction. The direction in which the magnetic field lines formed from the north pole approach the nearest peripheral magnet portion 32 is defined as the positive direction. In other words, the magnet inclination line 27D extending from the second magnetic pole surface 27S toward the first magnetic pole surface 27F faces the oscillation region SW of the magnet 25. The value of angle θ is changed from 0 deg to 90 deg.

Distance Wx is the closest distance in the X direction between the auxiliary magnet 27 and the closest peripheral magnet portion 32. When the auxiliary magnet 27 is tilted at an angle θ, it is the distance from the protrusion 27b of the auxiliary magnet 27 protruding in the X direction to the peripheral magnet portion 32. Distance Wx is changed from 0 mm to 30 mm.

Distance Wy is the distance in the Y direction between the protrusion 27a at the point where the magnetic pole face of the N pole of the auxiliary magnet 27 protrudes most toward the target 23 and the magnetic pole plane 30. When distance Wy is a negative value, it indicates that protrusion 27a is farther away from the target 23 than the magnetic pole plane 30. Distance Wy is varied from 0 mm to 50 mm.

Figures 23 to 26 show the plasma density at the surface 23a on the periphery of the target 23 close to the anode 28 when the arrangement of the magnet 25 and auxiliary magnet 27 in this embodiment is changed. Here, in Figures 23 to 26, the symbols "x", "△", "o", and "◎" are shown. These symbols indicate increasing plasma density in that order. That is, the symbol "x" indicates the lowest plasma density. The symbol "◎" indicates the highest plasma density and indicates that it is equivalent to the plasma density at a position away from the anode 28. The symbol "◯" indicates that the plasma density is approximately 80% of the plasma density of the symbol "◎". The symbol "△" indicates that the plasma density is 50% or less of the plasma density of the symbol "◎".

From the results shown in Figures 23 to 26, it can be seen that the plasma density does not change when the angle θ is 90 deg. It can also be seen that the angle θ, the distance Wx, and the distance Wy are not independent parameters. If an inclination is obtained at the angle θ, the distance Wx, and the distance Wy that presses the magnetic field lines of the nearest peripheral magnet section 32 toward the inside of the oscillation region, it can be seen that the preferred range is not set by the distance Wx alone, for example.

in particular,
θ=0deg, -10mm≦Wy≦10mm, 0mm≦Wx≦20mm,
θ=30deg, -10mm≦Wy≦10mm, 0mm≦Wx≦30mm,
θ=60deg, 0mm≦Wy≦10mm, 20mm≦Wx≦30mm,
can be set to a suitable range.

Furthermore, (θ [deg], Wx [mm], Wy [mm]) is
(0, 0, -10) (0, 0, 0) (0, 0, 10) (0, 10, 0) (30, 0, -10) (30, 0, 0) (30, 0, 10) (30, 10, 0) (30, 10, 10) (30, 20, 0) (30, 20, 10) (30, 30, 10) (60, 30, 0)
It is also possible to define the range as the area connecting each point.

<Modifications of magnetic field generating regions MG1, MG2, MG3>
In the above-described embodiment, a structure in which the multiple magnetic field generating regions MG1, MG2, and MG3 constituting each of the nine magnets 25 are continuously connected in the Z direction has been described. In this modified example, a divided structure in which the multiple magnetic field generating regions MG1, MG2, and MG3 are divided in the Z direction will be described. In the divided structure, for example, the multiple magnetic field generating regions MG1, MG2, and MG3 may be divided one by one. Also, one unit region may be formed by two, three, or four magnetic field generating regions, and the multiple unit regions may be divided from each other.

In each of the second magnet 25S to the eighth magnet 25E, each of the multiple magnetic field generating regions MG1, MG2, MG3 has a divided yoke, a divided peripheral magnet portion, and a divided central magnet portion.
Furthermore, in each of the first magnet 25F and the ninth magnet 25N, each of the multiple magnetic field generating regions MG1, MG2, MG3 has a split yoke, a split peripheral magnet portion, a split central magnet portion, and a split auxiliary magnet.
Here, the split yoke corresponds to the above-mentioned yoke 31. The split peripheral magnet portion corresponds to the above-mentioned peripheral magnet portion 32. The split central magnet portion corresponds to the above-mentioned central magnet portion 33. The split auxiliary magnet corresponds to the above-mentioned auxiliary magnet 27.

For each of the nine magnets 25, the position of each of the multiple magnetic field generating regions MG1, MG2, MG3 can be adjusted in the Z direction and the Y direction. The magnet 25 having the multiple magnetic field generating regions MG1, MG2, MG3 whose positions have been adjusted can be swung by the magnet scanning unit 29.

In order to control the film formation state for the entire film formation region, for example, the magnetic flux density conditions related to plasma generation are adjusted in the Z and Y directions. According to this modification, since the multiple magnetic field generation regions MG1, MG2, and MG3 are divided, the positions of the multiple magnetic field generation regions MG1, MG2, and MG3 in the Z and Y directions can be adjusted. Therefore, it is possible to adjust the magnetic flux density conditions in each of the multiple magnetic field generation regions MG1, MG2, and MG3.
By adjusting each of the multiple magnetic field generating regions MG1, MG2, MG3 in the Z direction and the Y direction, in each of the multiple magnetic field generating regions, the magnetic field lines of the peripheral magnetic pole of the magnet 25 located at the first oscillation end can be tilted in a required direction by the divided auxiliary magnets. In each of the multiple magnetic field generating regions MG1, MG2, MG3, a state in which the magnetic field lines are tilted in the required direction can be maintained.

Below, we will explain the embodiments of the present invention.

Here, we will explain the confirmation tests performed as a specific example of film formation by sputtering in the present invention. Here, we confirmed the non-erosion areas of the target 23, measured the film thickness distribution, and measured the sheet resistance distribution.

<Experimental Example 1>
Using the sputtering apparatus 1 having the auxiliary magnet 27 shown in the embodiment, the oscillation width was set to 82.5 mm from the center. In other words, half of the oscillation distance in the X direction from the oscillation end Reverse to the oscillation end Forward is 82.5 mm.

Here, the parameters for film formation are shown.
・Condition 0
Target composition: ITO (Indium Tin Oxide)
Board dimensions (X direction x Z direction): 1500 mm x 1800 mm
Film composition: ITO
Film thickness: 80 nm
Supply power (plasma generation power): 15 kW
Bias power: Not used Supply gas and gas flow rate: Ar 120 sccm
Atmospheric pressure: 0.2 Pa
Film forming time: 53 seconds

Width dimension of auxiliary magnet 27 in the X direction (width of pole face): 185 mm
Angle θ: 30°
Wx: 17mm
Wy: 20 mm
Auxiliary yoke 31d: SUS430
As a result, as shown in FIGS. 13, 14 and 21, film formation characteristics with a film thickness distribution of 4.2% or less and a sheet resistance distribution of 12.5% or less could be obtained.

<Experimental Examples 2 to 4>
An ITO film was formed in the same manner without using the auxiliary magnet 27 .
・Condition 1
Target composition: ITO
Board dimensions (X direction x Z direction): 1500 mm x 1800 mm
Film composition: ITO
Film thickness: 80 nm
Supply power (plasma generation power): 30 kW
Bias power: Not used Supply gas and gas flow rate: Ar 120 sccm
Atmospheric pressure: 0.2 Pa
Film forming time: 65 seconds

As a result, under condition 1, film formation characteristics of a film thickness distribution of 7.9% and a sheet resistance distribution of 11.5% were obtained, as shown in Figures 15, 16, and 21.

・Condition 2
Target composition: ITO
Board dimensions (X direction x Z direction): 1500 mm x 1800 mm
Film composition: ITO
Film thickness: 80 nm
Supply power (plasma generation power): 30 kW
Bias power: not used Supply gas and gas flow rate: _H2O 0.5 sccm, Ar 120 sccm
Atmospheric pressure: 0.5 Pa
Film forming time: 74 seconds

As a result, under condition 2, film formation characteristics of a film thickness distribution of 5.5% and a sheet resistance distribution of 21.3% were obtained, as shown in Figures 17, 18, and 21.

・Condition 3
Target composition: ITO
Board dimensions (X direction x Z direction): 1500 mm x 1800 mm
Film composition: ITO
Film thickness: 80 nm
Supply power (plasma generation power): 60 kW
Bias power: not used Supply gas and gas flow rate: _H2O 0.5 sccm, Ar 360 sccm
Atmospheric pressure: 0.3 Pa
Film forming time: 86 seconds

As a result, under condition 3, film formation characteristics of a film thickness distribution of 4.2% and a sheet resistance distribution of 26.6% were obtained, as shown in Figures 19, 20, and 21.

<Experimental Example 5>
Sputtering was carried out without providing the auxiliary magnet 27, and the target surface was visually observed.
Target composition: Aluminum Substrate dimensions (X direction x Z direction): 1500 mm x 1800 mm

As a result, the dimensions of the non-erosion region E1 shown in Fig. 7 were measured to be 11 mm, 17 mm, 8 mm, 11 mm, etc. The dimensions of the non-erosion region E2 shown in Fig. 7 were measured to be 19 mm, 20 mm, etc. The dimensions of the non-erosion region E3 shown in Fig. 7 were measured to be 10 mm, 5 mm, 8 mm, 10 mm, etc.
At the same time, the boundary area was observed and its dimensions were measured as 15 mm.

<Experimental Example 6>
Sputtering was carried out using the auxiliary magnet 27, and the target surface was visually observed.
Target composition: Aluminum Substrate dimensions (X direction x Z direction): 1500 mm x 1800 mm

Width of auxiliary magnet 27 in the X direction (width of pole face) 185 mm
Angle θ: 30°
Wx: 17mm
Wy: 20 mm
Auxiliary yoke 31d: SUS430
As a result, the dimension of the non-eroded region E1 shown in Fig. 22 was 22 mm. However, no boundary region was observed.

<Experimental Example 7>
Using the auxiliary magnet 27, the plasma density was measured by changing (θ [deg], Wx [mm], Wy [mm]) as shown in Figures 23 to 26. The results are shown in Figures 23 to 26. This revealed that it is necessary to satisfy a predetermined relationship between the angle θ, the distance Wx, and the distance Wy, as described above.

Furthermore, in Experimental Example 6, in which the auxiliary magnet 27 was used, the surface of the target 23 was checked after the sputtering process was completed. An image of the corner at this time is shown in Figure 28. From this result, it can be seen that the boundary of the non-erosion region is clear and not blurred, the plasma is not lost on the non-erosion region during the process, and no boundary region is observed.

Similarly, in Experimental Example 5, in which the auxiliary magnet 27 was not used, the surface of the target 23 was checked after the sputtering process was completed. An image of the corner at this time is shown in Figure 29. From this result, it can be seen that the boundary of the non-erosion region is blurred, the plasma disappears above the non-erosion region during the process, and the boundary region is observed.

From these results, it can be seen that by using the auxiliary magnet 27 to push the magnetic field lines away from the anode 28, the boundary area between the eroded and non-eroded areas is reduced, making it possible to reduce particles and also to improve the film thickness distribution and sheet resistance distribution.

1... sputtering device 4... film formation chamber (vacuum chamber)
10: Cathode device 10A: Cathode box 11: Glass substrate (film-forming substrate, transparent substrate)
13... Substrate holder 22... Cathode unit 23... Target 24... Backing plate 25... Magnet (magnetic circuit)
26...Control unit 27...Auxiliary magnet 27a...Protrusion 28...Anode 29...Magnet scanning unit 31...Yoke 31d...Auxiliary yoke 32...Peripheral edge magnet section 33...Central magnet section 33a...End magnet section 33b...First coil section 41...Front space 42...Back space MU...Magnet unit (magnetic circuit)

Claims (5)

A sputtering apparatus including a cathode unit that emits sputter particles toward a surface of a substrate to be processed,
The cathode unit comprises:
a target on which an erosion region is formed;
a magnet unit including a plurality of magnets disposed on the opposite side of the target from the deposition substrate and forming the erosion region in the target;
a magnet scanning unit that can relatively reciprocate the magnet unit and the film formation substrate between a first swing end and a second swing end in a swing direction along the processing surface of the film formation substrate;
an auxiliary magnet that inclines a magnetic field line formed by a magnet located at the first oscillation end toward the second oscillation end along a magnet located at the first oscillation end among the plurality of magnets extending along the processing surface of the film formation substrate in an intersecting direction intersecting the oscillation direction;
having
the auxiliary magnet is disposed on an opposite side of the first swing end to the second swing end along the magnet located at the first swing end,
The auxiliary magnet is capable of swinging integrally with the magnet,
the auxiliary magnet has the same polarity as the magnet located at the first swing end,
The magnetic strength of the auxiliary magnet is equal to or smaller than the magnetic strength of the magnet located at the first swing end,
The auxiliary magnet has a protrusion protruding along the magnet toward the target .
Sputtering equipment. the auxiliary magnet is disposed on the opposite side of the deposition substrate with respect to the target, and is attached and fixed to a yoke that forms a magnetic circuit;
2. The sputtering apparatus of claim 1 . The cathode unit comprises:
a flat yoke having a central region made of a magnetic material on its surface;
an auxiliary yoke adjacent to the yoke;
a central magnet portion linearly arranged in the central region of the yoke;
A peripheral magnet portion provided so as to surround the central magnet portion;
a parallel region in which the central magnet portion and the peripheral magnet portion are parallel to each other;
a magnetic circuit provided on the surface of the yoke;
A backing plate disposed over the magnetic circuit;
having
Each of the plurality of magnets constituting the magnet unit is disposed on the yoke,
The auxiliary magnets are arranged parallel to the peripheral magnet portion,
the auxiliary magnet is fixed to the yoke via the auxiliary yoke,
The auxiliary yoke is made of a magnetic material or a dielectric material.
The sputtering apparatus according to claim 1 or 2 . the auxiliary yoke and the auxiliary magnet are removable from the yoke;
4. The sputtering apparatus according to claim 3 . The magnet located at the first swing end among the plurality of magnets has a plurality of magnetic field generating regions divided in the intersecting direction,
Each of the magnetic field generating regions includes a divided yoke, a divided peripheral magnet portion, a divided central magnet portion, and a divided auxiliary magnet,
The position of each of the magnetic field generating regions in the transverse direction and in the thickness direction of the yoke is adjustable;
The magnet having the plurality of magnetic field generating regions whose positions are adjusted can be swung by the magnet scanning unit.
5. The sputtering apparatus according to claim 4 .

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