JP7712907B2 - Sputtering Equipment - Google Patents

Description

The present invention relates to a sputtering device, and in particular to a technology suitable for use in film deposition using a magnetron cathode.

2. Description of the Related Art In a film forming apparatus having a magnetron cathode, a method of moving a magnet relative to a target is known for the purpose of improving the utilization efficiency of the target.
As in the technique disclosed in Patent Document 1, in order to improve the uniformity of film formation, it is also known to oscillate the cathode and the target relative to the substrate on which the film is formed, in addition to moving the magnet.

Also, as disclosed in Japanese Patent Application Laid-Open No. 2003-133696, it is known to oscillate the magnet and the cathode for the purpose of preventing generated particles from adversely affecting film formation in the sputtering chamber.
Furthermore, the applicants have disclosed a technique such as that disclosed in Japanese Patent Laid-Open No. 2003-233699 as a technique for oscillating a substrate on which a film is formed relative to a magnet and a cathode.

JP 2009-41115 A JP 2012-158835 A Patent No. 6579726

However, even with the technology of scanning (oscillating) a magnet relative to the target as described above, the occurrence of non-erosion areas can cause particle generation near the periphery of the deposition area close to the edge of the magnet's oscillation range, and there was a demand to eliminate this problem. In particular, it was found that rather than the occurrence of non-erosion areas themselves, when the boundary between the non-erosion area and the erosion area becomes blurred, this can cause problematic particle generation, such as re-sputtering of the redeposited film (the sputtered film deposited on the target).

Even with the technology of scanning (oscillating) a magnet over a target as described above, problems remain, such as a reduction in film thickness and uneven film thickness and quality distribution near the periphery of the deposition area close to the magnet's oscillation range due to the occurrence of non-erosion areas. Furthermore, as substrates become larger, there is an increasing demand for improvements to these problems.

The present invention has been made in consideration of the above circumstances, and aims to achieve the following objects.
1. Suppression of the generation of blurred areas around non-erosion areas, reducing the source of particle generation.
2. To stabilize the distribution of the formed plasma and improve the uniformity of the film thickness distribution and film thickness characteristic distribution regardless of the magnet's swing position.

As a result of extensive research, the inventors of the present application have succeeded in suppressing particle generation in non-erosion regions, as well as suppressing variations in film thickness distribution and film quality characteristic distribution.

During sputtering, a magnetic field (magnetic field, magnetic lines of force) is formed from the magnet due to the applied power. At this time, the plasma or electrons that contribute to sputtering move along the magnetic lines of force formed by the magnet. Of the magnetic lines of force from the magnet, those that contribute to plasma generation run in an arc shape from the N pole toward the target and reach the S pole of the magnet, which is placed flush and parallel to the target. At this time, the magnetic lines of force from the magnet penetrate the thickness direction of the target from the back side to the front side from the N pole, form an arc shape in the plasma generation space, penetrate the thickness direction of the target from the front side to the back side, and return to the S pole.

A portion at ground potential, such as an anode, is disposed around the edge of the target. In this state, when the magnet is scanned (oscillated) and positioned near the end of the oscillation, the magnet is positioned close to this anode.
When this happens, a phenomenon may occur in which the magnetic field lines from the north pole move toward the nearby anode near the oscillating end of the magnet, and do not return to the south pole. As a result, the electrons are tracked (move) along the magnetic field lines, and do not return to the plasma generation space, but instead flow to the anode without contributing to plasma generation. This is called electrons being sucked in.

When electrons are absorbed by the anode, the electron density on the surface side of the target, i.e., in the plasma generation space, decreases. This can result in a phenomenon in which the density of the plasma formed decreases, or no plasma is generated. This is called plasma being absorbed. When this phenomenon occurs, the target is not sputtered by the plasma, so non-erosion areas are created, and the non-erosion areas can become larger.

Here, when electrons are absorbed by the anode, the plasma near the anode turns on and off due to the magnet's oscillation and other factors. This causes sputtering by the plasma to turn on and off. This increases the possibility of particles being generated due to sputtering of the redeposition film.

In other words, the occurrence of non-erosion regions may cause particle generation near the periphery of the film-forming region close to the range of oscillation of the magnet.
At this time, the boundary between the non-erosion region and the erosion region becomes unclear, and an erosion-non-erosion boundary region is formed.

In this way, it was found that rather than the occurrence of non-erosion regions themselves, it is the blurring of the boundary between non-erosion regions and erosion regions that causes problematic particle generation, such as re-sputtering of the redeposited film.

As mentioned above, when electrons are attracted to the anode, the magnetic field lines from the magnet are directed toward the anode, that is, they are inclined outward from the target contour rather than in the thickness direction of the target.

Therefore, in order to solve this problem, the inventors of the present application discovered that it is possible to reduce the number of electrons that are absorbed by directing the magnetic field lines formed by the magnet at the oscillating end of the magnet away from the anode. In other words, they discovered that inclining the magnetic field lines formed by the magnet at one end of the oscillating end of the magnet toward the other end of the oscillating end of the magnet rather than in the thickness direction of the target, i.e., inclining them inward toward the target's contour rather than in the thickness direction of the target, is effective in reducing the non-erosion region.

In the above explanation, the magnetic field lines are shown as going from the north pole to the south pole, as is the usual notation, but the phenomenon can be understood without any problems if the polarity is reversed.

Furthermore, when a non-erosion region occurs, plasma generation is suppressed. As a result, the applied power supply is not consumed in plasma generation and becomes surplus. This surplus power is redistributed to a region other than the original non-erosion region, or is absorbed as an overall voltage (power) fluctuation. As a result, the plasma generation conditions fluctuate like voltage fluctuations, which ultimately causes variations in film thickness distribution and increases the variation in film quality characteristic distribution.

In other words, when electrons are absorbed by the anode, non-erosion regions occur, which increases the variation in film thickness distribution and film quality characteristic distribution.

Furthermore, when a non-erosion region has already occurred, partial fluctuations in the plasma generation conditions due to voltage fluctuations, etc., can result in the generation of non-erosion regions that are different from the original non-erosion region. In this case, particle generation and variations in film thickness distribution and film quality characteristic distribution will increase.

Therefore, in order to solve this problem, the inventors of the present application discovered that it is possible to reduce the number of electrons that are absorbed by directing the magnetic field lines formed by the magnet at one end of the magnet's oscillating end away from the anode. In other words, they discovered that inclining the magnetic field lines formed by the magnet at one end of the magnet's oscillating end toward the other end of the magnet's oscillating end rather than in the thickness direction of the target, i.e., inclining them inward toward the target's contour rather than in the thickness direction of the target, is effective in suppressing the occurrence of variations in film thickness distribution and film quality characteristic distribution.

In light of these considerations, the inventors have completed the present invention as follows:

(1) A sputtering apparatus according to one aspect of the present invention comprises:
A cathode unit that emits sputtered particles toward a deposition region of a deposition substrate,
a target on which an erosion region is formed;
a magnet unit disposed on the opposite side of the target from the deposition substrate and configured to form the erosion region in the target;
a magnet unit scanning unit capable of reciprocating the magnet unit and the deposition substrate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface;
having
The magnet unit has a magnet whose longitudinal direction extends along the target surface in a swing width direction that intersects with the swing direction,
a magnetic field line tilting mechanism that tilts the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
The magnetic field line tilt mechanism pushes the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
The magnet is
A central magnet portion having magnetic poles arranged linearly toward the target;
a peripheral magnet section having a magnetic pole facing the target and different in polarity from the central magnet section and surrounding the central magnet section along the target surface;
Equipped with
The magnet unit includes a plurality of magnets arranged in the swing direction,
The magnetic field line tilt mechanism may have, in the magnet located at one of the oscillation ends, an oscillation end central magnet portion that is formed smaller than the central magnet portion of an adjacent magnet.
(2) A sputtering apparatus according to one aspect of the present invention comprises:
A cathode unit that emits sputtered particles toward a deposition region of a deposition substrate,
a target on which an erosion region is formed;
a magnet unit disposed on the opposite side of the target from the deposition substrate and configured to form the erosion region in the target;
a magnet unit scanning unit capable of reciprocating the magnet unit and the deposition substrate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface;
having
The magnet unit has a magnet whose longitudinal direction extends along the target surface in a swing width direction that intersects with the swing direction,
a magnetic field line tilting mechanism that tilts the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
The magnetic field line tilt mechanism pushes the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
The magnet is
A central magnet portion having magnetic poles arranged linearly toward the target;
a peripheral magnet section having a magnetic pole facing the target and having a polarity different from that of the central magnet section, longitudinal straight sections extending parallel to both sides of the central magnet section at equal intervals and bridging sections respectively bridging the ends of both longitudinal straight sections, and surrounding the periphery of the central magnet section along the target surface;
Equipped with
The magnet unit includes a plurality of magnets arranged in the swing direction,
The magnetic field line tilt mechanism may have, in the magnet located at one of the oscillation ends, a longitudinal straight portion formed larger than the longitudinal straight portion of an adjacent magnet.
(3) A sputtering apparatus according to one aspect of the present invention comprises:
A cathode unit that emits sputtered particles toward a deposition region of a deposition substrate,
a target on which an erosion region is formed;
a magnet unit disposed on the opposite side of the target from the deposition substrate and configured to form the erosion region in the target;
a magnet unit scanning unit capable of reciprocating the magnet unit and the deposition substrate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface;
having
The magnet unit has a magnet whose longitudinal direction extends along the target surface in a swing width direction that intersects with the swing direction,
a magnetic field line tilting mechanism that tilts the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
The magnetic field line tilt mechanism pushes the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
The magnet is
A central magnet portion having magnetic poles arranged linearly toward the target;
a peripheral magnet section having a magnetic pole facing the target and different in polarity from the central magnet section and surrounding the central magnet section along the target surface;
Equipped with
The magnet unit includes a plurality of magnets arranged in the swing direction,
The magnetic field line tilt mechanism has a swing end inclined central magnet portion inclined toward the other swing end relative to the central magnet portion of the adjacent magnet in the magnet located at one swing end.
It is possible.
(4) A sputtering apparatus according to one aspect of the present invention comprises:
A cathode unit that emits sputtered particles toward a deposition region of a deposition substrate,
a target on which a non-erosion region and an erosion region are formed;
a magnet unit disposed on the opposite side of the target from the deposition substrate to form the non-erosion region and the erosion region in the target;
a magnet unit scanning unit capable of reciprocating the magnet unit and the deposition substrate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface;
having
The magnet unit has a magnet whose longitudinal direction extends along the target surface in a swing width direction that intersects with the swing direction,
a magnetic field line tilting mechanism that tilts the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
The magnetic field line tilt mechanism suppresses the formation of an erosion-non-erosion boundary region in which the boundary between the non-erosion region and the erosion region is unclear, and
the magnetic field line tilt mechanism pushes the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
The magnet is
A central magnet portion having magnetic poles arranged linearly toward the target;
a peripheral magnet section having a magnetic pole facing the target and different in polarity from the central magnet section and surrounding the central magnet section along the target surface;
Equipped with
The magnet unit includes a plurality of magnets arranged in the swing direction,
the magnetic field line tilt mechanism has an auxiliary magnet disposed adjacent to the peripheral edge magnet portion at a position outside the one of the swing ends of the swing region,
It is possible.
(5) A sputtering apparatus according to one aspect of the present invention comprises:
A cathode unit that emits sputtered particles toward a deposition region of a deposition substrate,
a target on which a non-erosion region and an erosion region are formed;
a magnet unit disposed on the opposite side of the target from the deposition substrate to form the non-erosion region and the erosion region in the target;
a magnet unit scanning unit capable of reciprocating the magnet unit and the deposition substrate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface;
having
The magnet unit has a magnet whose longitudinal direction extends along the target surface in a swing width direction that intersects with the swing direction,
a magnetic field line tilting mechanism that tilts the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
The magnetic field line tilt mechanism suppresses the formation of an erosion-non-erosion boundary region in which the boundary between the non-erosion region and the erosion region is unclear, and
the magnetic field line tilt mechanism pushes the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
an anode that is paired with the cathode unit and is located around the target, and the magnetic field line tilt mechanism has an outer magnet portion for an oscillation end that is located outside the oscillation region relative to the one oscillation end, on a back surface of the anode;
It is possible.
(6) A sputtering apparatus according to one aspect of the present invention comprises:
A cathode unit that emits sputtered particles toward a deposition region of a deposition substrate,
a target on which a non-erosion region and an erosion region are formed;
a magnet unit disposed on the opposite side of the target from the deposition substrate to form the non-erosion region and the erosion region in the target;
a magnet unit scanning unit capable of reciprocating the magnet unit and the deposition substrate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface;
having
The magnet unit has a magnet whose longitudinal direction extends along the target surface in a swing width direction that intersects with the swing direction,
a magnetic field line tilting mechanism that tilts the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
The magnetic field line tilt mechanism suppresses the formation of an erosion-non-erosion boundary region in which the boundary between the non-erosion region and the erosion region is unclear, and
the magnetic field line tilt mechanism changes the magnetic field lines formed by the magnet at the one oscillation end so that the width of the lines of magnetic field extending in the oscillation direction decreases.
It is possible.
(7) A sputtering apparatus according to one aspect of the present invention comprises:
A cathode unit that emits sputtered particles toward a deposition region of a deposition substrate,
a target on which an erosion region is formed;
a magnet unit disposed on the opposite side of the target from the deposition substrate and configured to form the erosion region in the target;
a magnet unit scanning unit capable of reciprocating the magnet unit and the deposition substrate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface;
having
The magnet unit has a magnet whose longitudinal direction extends along the target surface in a swing width direction that intersects with the swing direction,
a magnetic field line tilting mechanism that tilts the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
the magnetic field line tilt mechanism changes the magnetic field lines formed by the magnet at the one oscillation end so that the width of the lines of magnetic field extending in the oscillation direction decreases,
The magnet is
A central magnet portion having magnetic poles arranged linearly toward the target;
a peripheral magnet section having a magnetic pole facing the target and different in polarity from the central magnet section and surrounding the central magnet section along the target surface;
Equipped with
The magnet unit has a plurality of magnets arranged in the swing direction,
the magnetic field line tilt mechanism has an oscillation end magnetic body portion disposed adjacent to the central magnet portion in the oscillation direction in the magnet located at one of the oscillation ends,
It is possible.
(8) A sputtering apparatus according to one aspect of the present invention comprises:
A cathode unit that emits sputtered particles toward a deposition region of a deposition substrate,
a target on which a non-erosion region and an erosion region are formed;
a magnet unit disposed on the opposite side of the target from the deposition substrate to form the non-erosion region and the erosion region in the target;
a magnet unit scanning unit capable of reciprocating the magnet unit and the deposition substrate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface;
having
The magnet unit has a magnet whose longitudinal direction extends along the target surface in a swing width direction that intersects with the swing direction,
a magnetic field line tilting mechanism that tilts the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
The magnetic field line tilt mechanism suppresses the formation of an erosion-non-erosion boundary region in which the boundary between the non-erosion region and the erosion region is unclear, and
the magnetic field line tilt mechanism has a magnet tilt scanning unit that tilts the magnet located at one of the oscillation ends so that the magnetic field lines formed by the magnet at the one of the oscillation ends are tilted toward the other oscillation end,
It is possible.
(9) A sputtering apparatus according to one aspect of the present invention comprises:
A cathode unit that emits sputtered particles toward a deposition region of a deposition substrate,
a target on which an erosion region is formed;
a magnet unit disposed on the opposite side of the target from the deposition substrate and configured to form the erosion region in the target;
a magnet unit scanning unit capable of reciprocating the magnet unit and the deposition substrate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface;
having
The magnet unit has a magnet whose longitudinal direction extends along the target surface in a swing width direction that intersects with the swing direction,
a magnetic field line tilting mechanism that tilts the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
the magnet is disposed at one of the swing ends and has an anode that is paired with the cathode unit and is located around the target, the magnetic field line tilt mechanism having a magnet proximity scanning unit that moves the magnet close to the target so as to reduce the magnetic field lines formed in the magnet and reaching the anode,
It is possible.

(1) A sputtering apparatus according to one aspect of the present invention comprises:
A cathode unit that emits sputtered particles toward a deposition region of a deposition substrate,
a target on which an erosion region is formed;
a magnet unit disposed on the opposite side of the target from the deposition substrate and configured to form the erosion region in the target;
a magnet unit scanning unit capable of reciprocating the magnet unit and the deposition substrate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface;
having
The magnet unit has a magnet whose longitudinal direction extends along the target surface in a swing width direction that intersects with the swing direction,
a magnetic field line tilting mechanism for tilting the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end;
This has solved the above problem.

According to the above configuration, when the magnet unit is located at one of the oscillation ends in the oscillation region, which is the range in which the magnet unit oscillates, the magnetic field lines formed by the magnet of the magnet unit at a position in contact with one of the oscillation ends can be tilted toward the other oscillation end by the magnetic field line tilt mechanism. This makes it possible to reduce the number of electrons absorbed by the anode. This makes it possible to suppress the absorption of plasma and the reduction in plasma density. This effectively reduces the erosion-non-erosion boundary region, thereby reducing the generation of particles caused by the formation of the erosion-non-erosion boundary region.
At the same time, by suppressing fluctuations in the supply voltage, fluctuations in plasma density due to the magnet's swing position can be suppressed, the plasma generation state can be stabilized, and variations in film thickness distribution and film quality characteristic distribution can be effectively suppressed.

(2) A sputtering apparatus according to one aspect of the present invention is the sputtering apparatus according to the above (1),
the magnetic field line tilt mechanism pushes the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end;
It is possible.

According to the above configuration, when the magnet unit is located at one of the oscillation ends in the oscillation region, which is the range in which the magnet unit oscillates, the magnetic field lines formed by the magnet of the magnet unit that is in contact with one of the oscillation ends can be pushed toward the other oscillation end by the magnetic field line tilt mechanism. This makes it possible to reduce the number of electrons absorbed by the anode. This makes it possible to prevent the plasma from being absorbed, which would otherwise cause a decrease in plasma density.

(3) A sputtering apparatus according to one aspect of the present invention is the sputtering apparatus according to the above (2),
The magnet is
A central magnet portion having magnetic poles arranged linearly toward the target;
a peripheral magnet section having a magnetic pole facing the target and different in polarity from the central magnet section and surrounding the central magnet section along the target surface;
Equipped with
The magnet unit has a plurality of magnets arranged in the swing direction,
the magnetic field line tilt mechanism has a magnet located at one of the swing ends, the magnet having a swing end central magnet portion that is smaller than the central magnet portion of the adjacent magnet,
It is possible.

According to the above configuration, when the magnet unit is located at one of the oscillation ends in the oscillation region, which is the range in which the magnet unit oscillates, the magnetic field line tilt mechanism can push the magnetic field lines formed between the oscillation end central magnet part and the peripheral magnet part closer to the one oscillation end than the oscillation end central magnet part, in the oscillation direction, toward the other oscillation end, for the magnet of the magnet unit that is in contact with the one oscillation end. Therefore, it is possible to reduce the number of electrons absorbed by the anode. Therefore, it is possible to suppress the plasma from being absorbed and the plasma density from being reduced.
This is because the central magnet section at the oscillating end is made small, so that the inclination of the magnetic field lines formed by the peripheral magnet section that is closer to one of the oscillating ends than the central magnet section at the oscillating end can be formed so that the magnetic field lines approach the normal to the target surface in the oscillating direction.

Here, "the central magnet part at the oscillating end is made small" means that the magnetic force of the central magnet part at the oscillating end is smaller than the magnetic force of the central magnet part of the adjacent magnet. Specifically, "the central magnet part at the oscillating end is made small" means that the volume of the central magnet part at the oscillating end, particularly the width dimension in the oscillating direction, is made small. Alternatively, "the central magnet part at the oscillating end is made small" may mean that the thickness dimension of the central magnet part at the oscillating end in the normal direction of the target is made small.

(4) A sputtering apparatus according to one aspect of the present invention is the sputtering apparatus according to the above (2),
The magnet is
A central magnet portion having magnetic poles arranged linearly toward the target;
a peripheral magnet section having a magnetic pole facing the target and having a polarity different from that of the central magnet section, longitudinal straight sections extending parallel to both sides of the central magnet section at equal intervals and bridging sections respectively bridging the ends of both longitudinal straight sections, and surrounding the periphery of the central magnet section along the target surface;
Equipped with
The magnet unit has a plurality of magnets arranged in the swing direction,
the magnetic field line tilt mechanism has a longitudinal straight portion of the magnet located at one of the oscillation ends that is formed larger than the longitudinal straight portion of the adjacent magnet,
It is possible.

According to the above configuration, when the magnet unit is located at one of the oscillation ends in the oscillation region, which is the range in which the magnet unit oscillates, the magnetic field line inclination mechanism can push the magnetic field lines formed between the central magnet part and the oscillation end longitudinal straight part closer to the one oscillation end than the central magnet part toward the other oscillation end in the oscillation direction for the magnet of the magnet unit that is in contact with the one oscillation end. Therefore, it is possible to reduce the number of electrons absorbed by the anode. Therefore, it is possible to suppress the plasma from being absorbed and the plasma density from being reduced.
This is because the longitudinal straight portion of the oscillating end is formed to be large, so that the inclination of the magnetic field lines formed by the longitudinal straight portion of the oscillating end that is closer to one of the oscillating ends than the central magnet portion can be formed so that the magnetic field lines approach the normal to the target surface in the oscillating direction.

Here, the fact that the oscillating end longitudinal straight portion is formed large means that the magnetic force of the oscillating end longitudinal straight portion closer to one of the oscillating ends than the central magnet portion is greater than the magnetic force of the longitudinal straight portion of the adjacent magnet. Specifically, the fact that the oscillating end longitudinal straight portion is formed large means that the volume of the oscillating end longitudinal straight portion, particularly the width dimension in the oscillating direction, is formed large. Alternatively, the fact that the oscillating end longitudinal straight portion is formed large may mean that the thickness dimension of the oscillating end longitudinal straight portion in the normal direction of the target is formed large.

Furthermore, the fact that the oscillating end longitudinal straight portion is formed large may mean that the magnetic force of the oscillating end longitudinal straight portion closer to one of the oscillating ends than the central magnet portion is greater than the magnetic force of the adjacent longitudinal straight portion sandwiching the central magnet portion of the same magnet in the oscillating direction. Specifically, the fact that the oscillating end longitudinal straight portion is formed large means that the volume of the oscillating end longitudinal straight portion, particularly the width dimension in the oscillating direction, is formed larger than the width dimension of the adjacent longitudinal straight portion sandwiching the central magnet portion of the same magnet in the oscillating direction. Alternatively, the fact that the oscillating end longitudinal straight portion is formed large may mean that the thickness dimension of the oscillating end longitudinal straight portion in the normal direction of the target is formed larger than the thickness dimension of the adjacent longitudinal straight portion sandwiching the central magnet portion of the same magnet in the oscillating direction.

(5) A sputtering apparatus according to one aspect of the present invention is the sputtering apparatus according to the above (2),
The magnet is
A central magnet portion having magnetic poles arranged linearly toward the target;
a peripheral magnet section having a magnetic pole facing the target and different in polarity from the central magnet section and surrounding the central magnet section along the target surface;
Equipped with
The magnet unit has a plurality of magnets arranged in the swing direction,
The magnetic field line tilt mechanism has a swing end inclined central magnet portion inclined toward the other swing end relative to the central magnet portion of the adjacent magnet in the magnet located at one swing end.
It is possible.

According to the above configuration, when the magnet unit is located at one of the oscillation ends in the oscillation region, which is the range in which the magnet unit oscillates, the oscillation end inclined central magnet part is inclined toward the other end with respect to the magnet of the magnet unit that is in contact with one of the oscillation ends, so that the magnetic field lines formed between the oscillation end inclined central magnet part and the peripheral magnet part closer to one of the oscillation ends than the oscillation end inclined central magnet part can be pushed toward the other oscillation end in the oscillation direction. Therefore, it is possible to reduce the electrons absorbed by the anode. Therefore, it is possible to suppress the plasma from being absorbed and the plasma density from being reduced.
This is because the swing end inclined central magnet portion is formed at an incline toward the other end, so that the inclination of the magnetic field lines formed by the peripheral magnet portion that is closer to one of the swing ends than the swing end inclined central magnet portion can be formed so that the magnetic field lines approach the normal to the target surface in the swing direction.
Here, the phrase "the oscillation end inclined central magnet portion is formed so as to be inclined toward the other end portion" means that the magnetic force of the oscillation end inclined central magnet portion is inclined toward the other end portion.

(6) A sputtering apparatus according to one aspect of the present invention is the above-mentioned (2),
The magnet is
A central magnet portion having magnetic poles arranged linearly toward the target;
a peripheral magnet section having a magnetic pole facing the target and different in polarity from the central magnet section and surrounding the central magnet section along the target surface;
Equipped with
The magnet unit has a plurality of magnets arranged in the swing direction,
the magnetic field line tilt mechanism has an auxiliary magnet disposed adjacent to the peripheral edge magnet portion at a position outside the one of the swing ends in a swing region;
It is possible.

According to the above configuration, when the magnet unit is located at one of the oscillation ends in the oscillation region, which is the range in which the magnet unit oscillates, the magnetic field formed by the magnet located at one of the oscillation ends can be tilted with respect to the magnet of the magnet unit located at a position in contact with one of the oscillation ends, using the magnetic field formed by the auxiliary magnet. Therefore, it is possible to reduce the number of electrons absorbed by the anode. Therefore, it is possible to suppress the absorption of plasma and the reduction in plasma density. This effectively reduces the erosion-non-erosion boundary region, and reduces the generation of particles caused by the formation of the erosion-non-erosion boundary region.
At the same time, by suppressing fluctuations in the supply voltage, fluctuations in plasma density due to the magnet's swing position can be suppressed, the plasma generation state can be stabilized, and variations in film thickness distribution and film quality characteristic distribution can be effectively suppressed.

(7) A sputtering apparatus according to one aspect of the present invention is the sputtering apparatus according to the above (2),
an anode that is paired with the cathode unit and positioned around the target;
the magnetic field line tilt mechanism has an outer magnet part for an oscillation end located on the back surface of the anode and located outside a oscillation region of the one oscillation end;
It is possible.

According to the above configuration, when the magnet unit is located at one of the oscillation ends in the oscillation region, which is the range in which the magnet unit oscillates, the magnetic field formed by the magnet located at one of the oscillation ends can be tilted with respect to the magnet of the magnet unit located at a position in contact with one of the oscillation ends by using the magnetic field formed by the oscillation end outer magnet part (auxiliary magnet). Therefore, it is possible to reduce the number of electrons absorbed by the anode. Therefore, it is possible to suppress the absorption of plasma and the reduction in plasma density. This effectively reduces the erosion-non-erosion boundary region, and reduces the generation of particles caused by the formation of the erosion-non-erosion boundary region.
At the same time, by suppressing fluctuations in the supply voltage, fluctuations in plasma density due to the magnet's swing position can be suppressed, the plasma generation state can be stabilized, and variations in film thickness distribution and film quality characteristic distribution can be effectively suppressed.

(8) A sputtering apparatus according to one aspect of the present invention is the sputtering apparatus according to the above (1),
the magnetic field line tilt mechanism changes the magnetic field lines formed by the magnet at the one oscillation end so that the width of the lines of magnetic field extending in the oscillation direction decreases.
It is possible.

According to the above configuration, when the magnet unit is located at one of the oscillation ends in the oscillation region, which is the range in which the magnet unit oscillates, the magnetic field lines formed by the magnet located at one of the oscillation ends can be formed by the magnetic field line tilt mechanism so as not to spread outside the oscillation region with respect to the magnet of the magnet unit located at a position in contact with one of the oscillation ends. Therefore, it is possible to reduce the number of electrons absorbed by the anode. Therefore, it is possible to suppress the absorption of plasma and the reduction in plasma density. This effectively reduces the erosion-non-erosion boundary region, and reduces the generation of particles caused by the formation of the erosion-non-erosion boundary region.
At the same time, by suppressing fluctuations in the supply voltage, fluctuations in plasma density due to the magnet's swing position can be suppressed, the plasma generation state can be stabilized, and variations in film thickness distribution and film quality characteristic distribution can be effectively suppressed.

(9) A sputtering apparatus according to one aspect of the present invention is the sputtering apparatus according to the above (8),
The magnet is
A central magnet portion having magnetic poles arranged linearly toward the target;
a peripheral magnet section having a magnetic pole facing the target and different in polarity from the central magnet section and surrounding the central magnet section along the target surface;
Equipped with
The magnet unit has a plurality of magnets arranged in the swing direction,
the magnetic field line tilt mechanism has an oscillation end magnetic body portion disposed adjacent to the central magnet portion in the oscillation direction in the magnet located at one of the oscillation ends,
It is possible.

According to the above configuration, when the magnet unit is located at one of the oscillation ends in the oscillation region, which is the range in which the magnet unit oscillates, the oscillation end magnetic body portion can form the magnetic field lines formed between the central magnet portion and the peripheral magnet portion for the magnet of the magnet unit that is in contact with one of the oscillation ends so that they do not spread outside the oscillation region in the oscillation direction. Therefore, it is possible to reduce the number of electrons absorbed by the anode. Therefore, it is possible to suppress the absorption of plasma and the reduction in plasma density.
This is because, by arranging the oscillating end magnetic material portion adjacent to the central magnet portion, the magnetic field lines formed by the peripheral magnet portion which is closer to one of the oscillating ends than the central magnet portion can be formed so as not to extend outside the oscillating region.

Here, the oscillating end magnetic body part can be located in close proximity to one end of the central magnet part. Alternatively, the oscillating end magnetic body part can be located in close proximity to the other end of the central magnet part. Alternatively, the oscillating end magnetic body part can be located on both sides of the central magnet part in the oscillating direction.

(10) A sputtering apparatus according to one aspect of the present invention is the sputtering apparatus according to the above (1),
the magnetic field line tilt mechanism has a magnet tilt scanning unit that tilts the magnet located at one of the oscillation ends so that the magnetic field lines formed by the magnet at the one of the oscillation ends are tilted toward the other oscillation end,
It is possible.

According to the above configuration, when the magnet unit is located at one of the oscillation ends in the oscillation region, which is the range in which the magnet unit oscillates, the magnet tilt scanning unit tilts the magnet located at one of the oscillation ends with respect to the magnet of the magnet unit located at a position in contact with one of the oscillation ends, thereby tilting the magnetic field formed by the magnet toward the other end. Therefore, it is possible to reduce the number of electrons absorbed by the anode. Therefore, it is possible to suppress the absorption of plasma and the reduction in plasma density. This effectively reduces the erosion-non-erosion boundary region, thereby reducing the generation of particles caused by the formation of the erosion-non-erosion boundary region.
At the same time, by suppressing fluctuations in the supply voltage, fluctuations in plasma density due to the magnet's swing position can be suppressed, the plasma generation state can be stabilized, and variations in film thickness distribution and film quality characteristic distribution can be effectively suppressed.

(11) A sputtering apparatus according to one aspect of the present invention is the sputtering apparatus according to the above (1),
an anode that is paired with the cathode unit and positioned around the target;
the magnetic field line tilt mechanism has a magnet proximity scanning unit that moves the magnet located at one of the swing ends closer to the target so as to reduce magnetic field lines formed in the magnet and reaching the anode.
It is possible.

According to the above configuration, when the magnet unit is located at one of the oscillation ends in the oscillation region, which is the range within which the magnet unit oscillates, the magnet proximity scanning unit brings the magnet of the magnet unit, which is located in contact with one of the oscillation ends, close to the target located at one of the oscillation ends, so that the magnetic field formed from the magnet can be positioned near the target and not extend outside the oscillation region in the oscillation direction.
Therefore, it is possible to reduce the number of electrons absorbed by the anode, which in turn prevents the plasma from being absorbed and reduces the plasma density. This effectively reduces the erosion-non-erosion boundary region, thereby reducing the generation of particles caused by the formation of the erosion-non-erosion boundary region.
At the same time, by suppressing fluctuations in the supply voltage, fluctuations in plasma density due to the magnet's swing position can be suppressed, the plasma generation state can be stabilized, and variations in film thickness distribution and film quality characteristic distribution can be effectively suppressed.

A sputtering apparatus according to one aspect of the present invention comprises:
A cathode unit that emits sputtered particles toward a deposition region of a deposition substrate,
a target on which an erosion region is formed;
a magnet unit including a magnet disposed on the opposite side of the target from the deposition substrate and forming the erosion region in the target;
a magnet unit scanning section that can move the magnet and the film formation substrate back and forth between one swing end and the other swing end in a swing direction (scanning direction) along the surface of the substrate;
the magnetic field line tilt mechanism including an auxiliary magnet that tilts the magnetic field lines formed by the magnet located at one of the plurality of magnets extending along the substrate surface in a swing width direction intersecting the swing direction along the magnet located at the one swing end toward the other swing end;
may have the following structure:

As a result, at one of the oscillation ends of the magnet unit, the magnetic field lines formed by the magnet located at that one oscillation end can be tilted using the magnetic field generated by the auxiliary magnet. This makes it possible to reduce the number of electrons absorbed by the anode. This makes it possible to prevent the plasma from being absorbed, thereby preventing a decrease in plasma density. This effectively reduces the erosion-non-erosion boundary region, thereby reducing the generation of particles caused by the formation of the erosion-non-erosion boundary region.
At the same time, by suppressing fluctuations in the supply pressure, fluctuations in plasma density due to the magnet's swing position can be suppressed, the plasma generation state can be stabilized, and variations in film thickness distribution and film quality characteristic distribution can be effectively suppressed.

The sputtering apparatus of the present invention comprises:
The auxiliary magnet of the magnetic field line tilt mechanism is disposed along the magnet located at the one oscillation end on the opposite side of the other oscillation end with respect to the one oscillation end,
The auxiliary magnet may be capable of swinging integrally with the magnet.

This makes it possible to suppress the reduction of the magnetic field lines from the magnet regardless of the magnet's swing position, stabilizing the plasma generation state and reducing the formation of erosion-non-erosion boundary regions, suppressing particle generation, and suppressing variations in film thickness distribution and film quality characteristic distribution.

The sputtering apparatus of the present invention comprises:
The auxiliary magnet of the magnetic field line tilt mechanism may be a magnet having the same polarity as the magnet located at the one oscillation end.

This makes it possible to tilt the magnetic field lines from the magnet that generates the plasma in a specified direction while maintaining the required magnetic strength (magnetic flux density) by repelling the magnetic field lines from the auxiliary magnet. This therefore makes it possible to prevent the formation of an erosion-non-erosion boundary region without causing a decrease in plasma density, suppress particle generation, and suppress variations in film thickness distribution and film quality characteristic distribution.

The sputtering apparatus of the present invention comprises:
The magnetic strength of the auxiliary magnet of the magnetic field line tilt mechanism may be equal to or smaller than the magnetic strength of the magnet located at the one oscillation end.

This makes it possible to tilt the magnetic field lines from the magnet that generates the plasma at a predetermined angle without excessively tilting the magnetic field lines from the auxiliary magnet. Therefore, it is possible to suppress the formation of an erosion-non-erosion boundary region without causing an unnecessary decrease in plasma density or generating an unnecessary non-erosion boundary region, thereby suppressing particle generation and suppressing the occurrence of variations in film thickness distribution and film quality characteristic distribution.

The sputtering apparatus of the present invention comprises:
The auxiliary magnet of the magnetic field line tilt mechanism may have a protrusion that protrudes along the magnet toward the target.

This allows the magnetic field lines of the auxiliary magnet to be concentrated from the ridges. This makes it possible to efficiently tilt the magnetic field lines from the magnet that generates plasma without dispersing the magnetic field lines of the auxiliary magnet. This allows the auxiliary magnet to be made smaller and lighter, and makes it possible to oscillate the magnet and auxiliary magnet without placing an unnecessary burden on the magnet unit scanning section. This prevents the formation of an erosion-non-erosion boundary region without causing a decrease in plasma density or generating an unnecessary non-erosion boundary region, suppresses particle generation, and suppresses variations in film thickness distribution and film quality characteristic distribution.

The sputtering apparatus of the present invention comprises:
The auxiliary magnet of the magnetic field line tilt mechanism can be attached and fixed to a yoke that is disposed on the opposite side of the magnet away from the target and forms a magnetic circuit with the magnet.

This allows the auxiliary magnet to oscillate together with the magnet, and keeps the inclination of the magnetic field lines relative to the magnet at one end of the oscillation constant regardless of the oscillation position. In addition, the magnetic field of the auxiliary magnet can be incorporated into the magnetic circuit of the magnet formed together with the yoke, allowing for more efficient plasma generation.

The sputtering apparatus of the present invention comprises:
The cathode unit is
The magnet is disposed in a flat yoke having a central region made of a magnetic material on its surface,
The yoke has a central magnet portion linearly arranged in the central region and a peripheral magnet portion arranged so as to surround the central magnet portion, and the central magnet portion and the peripheral magnet portion have a parallel region in which they are parallel to each other,
a magnetic circuit provided on the surface of the yoke;
A backing plate disposed over the magnetic circuit;
As the magnetic field line tilt mechanism, a linear auxiliary magnet parallel to the central magnet portion and aligned along the peripheral magnet portion at the swing end;
having
the auxiliary magnet is fixed to the yoke via an auxiliary yoke,
The auxiliary yoke may be made of a magnetic material or a dielectric material.

As a result, the magnetic pole faces of the peripheral magnet section are arranged along a plane parallel to the substrate on which the film is to be formed, and the magnetic field lines of the peripheral magnet located at one end of the oscillation direction, which are directed away from the other end of the oscillation from the direction perpendicular to the magnetic pole face, are tilted at least in a direction toward the other end of the oscillation from the direction perpendicular to the magnetic pole face, so that even when the magnet is in an oscillation position closest to the anode, electrons are suppressed from being absorbed by the anode, and a decrease in plasma density is prevented at the periphery in the oscillation direction, and an erosion-non-erosion boundary region is suppressed from being formed without generating unnecessary non-erosion boundary regions, thereby suppressing particle generation and suppressing variations in film thickness distribution and film quality characteristic distribution.

The sputtering apparatus of the present invention comprises:
The auxiliary yoke and the auxiliary magnet may be removable from the yoke.

This makes it possible to easily change the settings by replacing the auxiliary magnet when processing under different operating conditions and changing the inclination angle of the magnetic field lines from the magnet at the oscillation end to form corresponding magnetic field lines.

The sputtering apparatus of the present invention comprises:
The yoke and the magnet can be divided in the swing width direction, and these divided parts can be positioned relative to each other in the swing width direction and in the direction approaching and moving away from the target, and the auxiliary magnets in the divided parts can be swung integrally with the corresponding magnets.

As a result, in order to control the film formation state for the entire film formation area, for example, in response to the adjustment of the magnetic flux density conditions related to plasma generation in the swing width direction, the magnet is divided, and when each of these divided parts moves its relative position relative to the magnet swing operation unit in the swing direction, the swing width direction, or a direction perpendicular to the magnetic pole face, it is possible to maintain in each divided part the change in the state in which the magnetic field lines of the peripheral magnetic pole, which is one end of the swing, are tilted in the required direction by the auxiliary magnet.

The present invention makes it possible to maintain the required magnetic flux density and thus maintain the plasma density, suppressing the generation of blurred areas around non-erosion areas, reducing particles, and stabilizing the distribution of the formed plasma, thereby improving the uniformity of the film thickness distribution and film thickness characteristic distribution regardless of the magnet's oscillation position.

1 is a schematic plan view showing a first embodiment of a sputtering apparatus according to the present invention; 1 is a schematic side view showing a film formation chamber in a first embodiment of a sputtering apparatus according to the present invention; FIG. 2 is a schematic diagram showing the positional relationship between a glass substrate and a configuration of a cathode device in the first embodiment of the sputtering device according to the present invention. 1 is a front view showing the positional relationship between a glass substrate, a target, and a magnet unit in a first embodiment of a sputtering device according to the present invention. FIG. 2 is an enlarged cross-sectional view showing an end portion of a magnet unit in the first embodiment of the sputtering apparatus according to the present invention. FIG. 5A to 5C are diagrams for explaining the operation of a magnetic field line tilt mechanism in the first embodiment of the sputtering apparatus according to the present invention. 11 is an enlarged cross-sectional view showing an end portion of a magnet unit in a sputtering apparatus according to a second embodiment of the present invention. FIG. 13A and 13B are diagrams for explaining the operation of a magnetic field line tilt mechanism in the second embodiment of the sputtering apparatus according to the present invention. 13 is an enlarged cross-sectional view showing an end portion of a magnet unit in a sputtering apparatus according to a third embodiment of the present invention. FIG. 13A and 13B are diagrams for explaining the operation of a magnetic field line tilt mechanism in a sputtering apparatus according to a third embodiment of the present invention. 13 is an enlarged cross-sectional view showing an end portion of a magnet unit in a sputtering apparatus according to a fourth embodiment of the present invention. FIG. 13A and 13B are diagrams for explaining the operation of a magnetic field line tilt mechanism in a sputtering apparatus according to a fourth embodiment of the present invention. 13 is an enlarged cross-sectional view showing an end portion of a magnet unit in a sputtering apparatus according to a fifth embodiment of the present invention. FIG. 13A and 13B are diagrams for explaining the operation of a magnetic field line tilt mechanism in a sputtering apparatus according to a fifth embodiment of the present invention. 13 is an enlarged cross-sectional view showing an end portion of a magnet unit in a sputtering apparatus according to a sixth embodiment of the present invention. FIG. 13A and 13B are diagrams for explaining the operation of a magnetic field line tilt mechanism in a sputtering apparatus according to a sixth embodiment of the present invention. 13 is an enlarged cross-sectional view showing an end portion of a magnet unit in a sputtering apparatus according to a seventh embodiment of the present invention. FIG. 13A to 13C are diagrams for explaining the operation of a magnetic field line tilt mechanism in the seventh embodiment of the sputtering apparatus according to the present invention. 13 is an enlarged cross-sectional view showing an end portion of a magnet unit in an eighth embodiment of a sputtering apparatus according to the present invention. FIG. 13A to 13C are diagrams for explaining the operation of a magnetic field line tilt mechanism in the eighth embodiment of the sputtering apparatus according to the present invention. 11A and 11B are diagrams for explaining the operation of the sputtering apparatus when there is no magnetic field line tilt mechanism.

Hereinafter, a first embodiment of a sputtering apparatus according to the present invention will be described with reference to the drawings.
Fig. 1 is a schematic plan view showing a sputtering apparatus according to the present embodiment. Fig. 2 is a schematic side view showing a film formation chamber in the sputtering apparatus according to the present embodiment. In the drawings, reference numeral 1 denotes the sputtering apparatus.

The sputtering apparatus 1 according to this embodiment is used, for example, in the manufacturing process of semiconductor devices and in the manufacturing process of FPDs (flat panel displays) such as liquid crystal displays and organic EL displays, when forming TFTs (thin film transistors) on substrates made of glass or the like. The sputtering apparatus 1 according to this embodiment is an inter-back type vacuum processing apparatus that performs heating, film formation, etching, and other processes in a vacuum environment on substrates made of glass or resin.

In this embodiment, a rectangular substrate with a side length of about 100 mm to 2500 mm or more can be used as the glass substrate (substrate on which a film is to be formed, transparent substrate) 11. Furthermore, substrates with a thickness of 1 mm or less, substrates with a thickness of several mm, and substrates with a thickness of 10 mm or more can also be used.

As shown in FIG. 1, the sputtering apparatus 1 according to this embodiment includes a load/unload chamber (vacuum chamber) 2, a film formation chamber (vacuum chamber) 4, and a transfer chamber (vacuum chamber) 3.
The load/unload chamber 2 carries in/out a substantially rectangular glass substrate 11 (substrate to be processed) to/from the outside. The film formation chamber 4 is a pressure-resistant vacuum chamber in which, for example, a ZnO-based or _{In2O3 -} based transparent conductive film, a metal such as aluminum or silver, an oxide, or other coating is formed on the glass substrate 11 by a sputtering method. The transfer chamber 3 is located between the film formation chamber 4 and the load/unload chamber 2, and transfers the glass substrate 11 between the film formation chamber 4 and the load/unload chamber 2 (vacuum chamber).

As shown in FIG. 1, the sputtering apparatus 1 according to this embodiment includes a load/unload chamber (vacuum chamber) 2, a film formation chamber (vacuum chamber) 4, and a transfer chamber (vacuum chamber) 3.
The load/unload chamber 2 carries in/out a substantially rectangular glass substrate 11 (substrate to be processed) to/from the outside. The film formation chamber 4 is a pressure-resistant vacuum chamber in which, for example, a ZnO-based or _{In2O3 -} based transparent conductive film, a metal such as aluminum or silver, an oxide, or other coating is formed on the glass substrate 11 by a sputtering method. The transfer chamber 3 is located between the film formation chamber 4 and the load/unload chamber 2, and transfers the glass substrate 11 between the film formation chamber 4 and the load/unload chamber 2 (vacuum chamber).

The sputtering apparatus 1 according to this embodiment can be configured as a side sputtering type apparatus, as shown in FIG. 1. Alternatively, the sputtering apparatus 1 according to this embodiment can be configured as a sputter-down type apparatus, as shown in FIG. 2. Furthermore, it can also be configured as a sputter-up type apparatus.

The sputtering apparatus 1 may further include a deposition chamber (vacuum chamber) 4A and a load/unload chamber (vacuum chamber) 2a. These multiple chambers, the load/unload chamber 2, the load/unload chamber 2a, the deposition chamber 4, and the deposition chamber 4A, are formed to surround the transfer chamber 3. Such a chamber may be configured, for example, with two load/unload chambers (vacuum chambers) formed adjacent to each other and multiple processing chambers (vacuum chambers).

For example, one of the load/unload chambers 2 is a load chamber that carries the glass substrate 11 from the outside to the inside of the sputtering apparatus 1 (vacuum processing apparatus), and the other load/unload chamber 2a is an unload chamber that carries the glass substrate 11 from the inside of the sputtering apparatus 1 to the outside. Also, a configuration may be adopted in which the film formation chamber 4 and the film formation chamber 4A perform different film formation processes. Also, a configuration may be adopted in which the film formation chamber 4 and the film formation chamber 4A perform different types of sputtering processing. For example, one of the film formation chamber 4 and the film formation chamber 4A can be configured as a side sputtering type apparatus, and the other as a sputter down type apparatus.

A partition valve (door valve) may be formed between the transfer chamber 3 and the load/unload chamber 2. Similarly, a partition valve (door valve) may be formed between the transfer chamber 3 and the load/unload chamber 2a. A partition valve (door valve) may be formed between the transfer chamber 3 and the deposition chamber 4. A partition valve (door valve) may be formed between the transfer chamber 3 and the deposition chamber 4A.

The load/unload chamber 2 may be provided with a positioning member capable of setting and aligning the placement position of the glass substrate 11 brought in from outside the sputtering apparatus 1. The load/unload chamber 2 is also provided with a roughing exhaust device (roughing exhaust means, low vacuum exhaust device) such as a rotary pump that roughly evacuates the interior of the chamber.

As shown in FIG. 1, a transfer device (transfer robot) 3a is disposed inside the transfer chamber 3.
The transport device 3a has a rotating shaft, a rotary drive device for rotating the rotating shaft, a robot arm attached to the rotating shaft, a robot hand formed at one end of the robot arm, and a vertical movement device for moving the robot hand up and down. The robot arm is composed of a first arm portion and a second arm portion that are orthogonal to each other and can slide horizontally. The transport device 3a can move the glass substrate 11, which is the object to be transported, between the load/unload chamber 2, the load/unload chamber 2a, the film formation chamber 4, the film formation chamber 4A, and the transport chamber 3.

As shown in FIG. 1, the film formation chamber 4 is provided with a cathode device 10, a substrate holding portion 13 serving as a substrate holder having a mask or the like, and a gas control portion 14 including a gas introduction device (gas introduction means) and a high vacuum exhaust device (high vacuum exhaust means).
1, the inside of the film formation chamber 4 is composed of a front space 41 in which the front surface of the glass substrate 11 is exposed during film formation, and a back space 42 located on the back surface side of the glass substrate 11 during film formation. The cathode device 10 is disposed in the front space 41.

The cathode device 10 is erected in the side sputtering type film formation chamber 4 shown in FIG. 1 at a position farthest from the transfer port 4 a connected to the transfer chamber 3 .
2, the cathode device 10 is disposed above the horizontally positioned glass substrate 11 transferred from the transfer opening 4a to the transfer chamber 3, and in parallel with and opposite to the glass substrate 11. A mask 20 may be disposed around the film formation opening 4b.

1 or 2, the substrate holding portion (substrate holding mechanism) 13 is provided inside the rear space 42. The substrate holding portion 13 is capable of supporting the glass substrate 11 carried in through the transfer opening 4a.
1, the substrate holding unit 13 holds the glass substrate 11 so that a target 23 (described later) faces a surface to be processed (film formation surface) 11a of the glass substrate 11 during film formation. The substrate holding unit 13 holds the glass substrate 11 in a vertical position facing the cathode device 10 that is installed upright during film formation.

2, the substrate holding unit 13 (substrate holding means) holds the glass substrate 11 so that a target 23 (described later) faces a surface to be processed (film formation surface) 11a of the glass substrate 11 during film formation. During film formation, the substrate holding unit 13 holds the glass substrate 11 in a horizontal position facing the cathode device 10 facing downward.
The substrate holding part 13 may include, inside the side sputtering type film formation chamber 4 shown in Figure 1, a swing shaft extending approximately parallel to the transport opening 4a and/or the film formation opening 4b at a lower position of the back space 42, and a holding part attached to the swing shaft and holding the back surface of the glass substrate 11.

The gas introduction device (gas introduction means) in the gas control unit 14 introduces gas into the inside of the film formation chamber 4. The high vacuum exhaust device (high vacuum exhaust means) in the gas control unit 14 is a turbo molecular pump or the like that draws a high vacuum inside the film formation chamber 4.

1, the cathode device 10 is capable of swinging in a horizontal direction along the main surface of the glass substrate 11 relative to the glass substrate 11 that is set to a film formation position (plasma processing position) inside the film formation chamber 4. In this case, the cathode device 10 may be configured in a box shape called a cathode box.
The cathode device 10 is capable of oscillating horizontally along the main surface of the glass substrate 11 relative to the glass substrate 11 which is set to a film formation position (plasma processing position) inside the film formation chamber 4 of the down sputtering type shown in FIG.

The following explanation will be given of the cathode device 10 inside the side sputtering type deposition chamber 4 shown in Figure 1, but the cathode device 10 inside the down sputtering type deposition chamber 4 shown in Figure 2 can also have the same configuration, with only the oscillation direction being different.

FIG. 3 is a schematic diagram showing the positional relationship between the glass substrate and the configuration of the cathode device in the sputtering device of this embodiment.
As shown in FIG. 3, the cathode device 10 has one cathode unit 22 .
3, the cathode unit 22 is disposed along the ZX plane facing the surface of the glass substrate 11. In the cathode unit 22, the target 23, the backing plate 24, and the magnet unit 21 are disposed in this order from a position close to the glass substrate 11 toward the Y direction away from the glass substrate 11.

In FIG. 3, the cathode device 10 is shown as a vertical type in which the target 23 is vertically set up approximately parallel to the glass substrate 11, in accordance with the side sputtering method shown in FIG. 1. Furthermore, the configuration of this embodiment can be adapted to a similar configuration even in the case of down deposition in which the glass substrate 11 is horizontally placed below the target 23, in accordance with the down sputtering method shown in FIG. 2, by interpreting the X, Y and Z directions accordingly.

FIG. 4 is a front view showing the positional relationship between the glass substrate, the target, and the magnet unit in the sputtering apparatus of this embodiment.
The target 23 is disposed in a flat plate shape along the ZX plane facing the glass substrate 11. The target 23 is exposed at a position facing the glass substrate 11 on the surface of the cathode box.

4, the target 23 has a width in the Z direction that is greater than that of the glass substrate 11. The target 23 also has a width in the X direction, which is the oscillation direction, that is greater than that of the glass substrate 11. An anode 28 is provided around the target 23.
The anode 28 is provided around the entire circumference of the target 23. The anode 28 covers the backing plate 24 protruding from the target 23 with respect to the glass substrate 11.

The backing plate 24 is formed in a flat plate shape along the ZX plane facing the glass substrate 11. The backing plate 24 is bonded to the surface of the target 23 that does not face the glass substrate 11. A control unit 26 having a DC power supply is connected to the backing plate 24. DC power supplied from the DC power supply is supplied to the target 23 through the backing plate 24. Instead of the DC power supply, a DC power supply, a pulse power supply, or an RF power supply may be used as the power supply for the cathode.
In the cathode unit 22, a target 23 is disposed along a ZX plane facing the film formation surface 11a of the glass substrate 11. The cathode unit 22 includes a magnet unit 21 in which a plurality of magnets 25 are arranged on the rear surface side of the target 23, i.e., at a position close to a backing plate 24 with respect to the target 23.

The magnet unit 21 has multiple magnets 25 arranged in parallel. The magnets 25 are multiple magnets. The longitudinal direction of each of the multiple magnets 25 is arranged along the Z direction. The multiple magnets 25 are arranged parallel to each other along the ZX plane. The longitudinal direction of the magnets 25 extends in the Y direction, which is the oscillation width direction that intersects with the X direction, which is the oscillation direction, along the surface of the glass substrate 11. In the X direction, the multiple magnets 25 are arranged at equal intervals from each other.

In this embodiment, for example, nine magnets 25 are adjacent to each other in the X direction. In the magnet unit 21, the number of magnets 25 can be set appropriately depending on the area of the glass substrate 11, the area of the target 23, or the oscillation range of the magnet unit 21 described below. In the cathode unit 22 in this embodiment, the target 23 is fixedly disposed relative to the glass substrate 11, and the target 23 is fixed to the film formation chamber 4.

The magnets 25 each form a magnetic circuit.
Each magnet 25 forms a magnetron magnetic field on the surface 23 a of the target 23 facing the glass substrate 11 .
In the magnet unit 21, each magnet 25 may be configured to form a predetermined magnetic circuit by a combination of permanent magnets. In the magnet unit 21, each magnet 25 may be individually connected to the control unit 26, so that the state of the magnetic field generated by each magnet can be controlled.
A magnetic field line tilt mechanism is provided on the magnets 25 at the ends in the X direction, which is the direction of oscillation, of the magnet unit 21. The magnetic field line tilt mechanism will be described later.

FIG. 5 is an enlarged cross-sectional view showing an end portion of a magnet unit of the sputtering apparatus in this embodiment.
In the magnet unit 21, the magnet 25 has a yoke 31, a central magnet portion 50, and a peripheral edge magnet portion 60, as shown in FIGS.

4 and 5, the yoke 31 is a flat magnet base having a substantially rectangular outline. The yoke 31 has a central region 25a on its surface. The yoke 31 can be made of SUS430 or the like.
The central magnet portion 50 is a rod-shaped composite magnet body with its longitudinal direction in the Z direction. The central magnet portion 50 is disposed at the center position in the X direction in the central region 25a. The central magnet portion 50 is disposed in a substantially straight line along the Z direction.
The peripheral magnet portion 60 is spaced apart from the central magnet portion 50 on the plane of the magnet base (yoke) 31 and is provided so as to surround the central magnet portion 50. The peripheral magnet portion 60 is a substantially elliptical ring-shaped magnet arranged along the ZX plane.

As shown in Figures 4 and 5, the central magnet section 50 and the peripheral magnet section 60 both have magnetic pole faces (magnetic pole planes) 30 facing in the Z direction. The central magnet section 50 and the peripheral magnet section 60 both have magnetic pole faces 30 along the ZX plane. The central magnet section 50 and the peripheral magnet section 60 have mutually different polarities. The central magnet section 50 and the peripheral magnet section 60 form a magnetic circuit.
The central magnet portion 50 and the peripheral magnet portion 60 form a parallel region that is parallel to each other in the central region 25 a in the Z direction, which is the longitudinal direction of the magnet 25 .

The central magnet section 50 is divided into multiple parts in the Z direction in which it extends. The divided magnets of the central magnet section 50 are arranged adjacent to each other in the Z direction. The central magnet section 50 is configured with multiple magnets arranged in a rod shape.

Similarly, the peripheral magnet section 60 is divided into multiple pieces along the Z and X directions that extend in a ring shape. The divided magnets of the peripheral magnet section 60 are arranged adjacent to each other in the Z and X directions. The peripheral magnet section 60 is configured with multiple magnets arranged in a ring shape. The peripheral magnet section 60 is arranged in an elliptical shape, in other words, a racetrack shape, in the ZX plane. Alternatively, the peripheral magnet section 60 is arranged in a shape close to a rectangle with rounded corners in the ZX plane.

Here, an elliptical shape is a shape formed by dividing a circle in two on a plane, separating the two in a direction perpendicular to the dividing line, and connecting the opposing ends with two parallel straight lines. Alternatively, a racetrack shape refers to a contour shape formed by rounding the four corners of a rectangle and rounding the corners in an arc to the point where the short sides disappear.

As shown in FIGS. 4 and 5 , the peripheral edge magnet portion 60 has a longitudinal straight portion 61 , a longitudinal straight portion 62 , and a bridging portion 63 .
The longitudinal straight portion 61 and the longitudinal straight portion 62 are portions of the peripheral magnet portion 60 that extend in the Z direction. The longitudinal straight portion 61 and the longitudinal straight portion 62 both extend parallel to both sides of the central magnet portion 50 in the ZX plane. The longitudinal straight portion 61 and the longitudinal straight portion 62 are spaced apart from each other in the X direction over their entire length in the Z direction. The longitudinal straight portion 61 and the longitudinal straight portion 62 are disposed at equal intervals in the X direction over their entire length in the Z direction.

The longitudinal straight portion 61 and the longitudinal straight portion 62 are formed so that their overall length in the Z direction is equal to each other. The longitudinal straight portion 61 and the longitudinal straight portion 62 are arranged at equal positions in the Z direction relative to the central magnet portion 50. The longitudinal straight portion 61 and the longitudinal straight portion 62 are formed so that their overall length in the Z direction is equal to each other and their width dimension in the X direction is equal. The outer peripheral surface (outer peripheral portion) of the longitudinal straight portion 61 and the outer peripheral surface (outer peripheral portion) of the longitudinal straight portion 62 are arranged along the side of the outer peripheral contour of the yoke 31 that is along the Z direction.

The Z-direction end (end face) of the longitudinal straight portion 61 and the Z-direction end (end face) of the longitudinal straight portion 62 are disposed at the same position in the Z direction. The inner peripheral surface (inner peripheral portion) of the longitudinal straight portion 61 and the inner peripheral surface (inner peripheral portion) of the longitudinal straight portion 62 face each other in parallel. The inner peripheral surface of the longitudinal straight portion 61 and the inner peripheral surface of the longitudinal straight portion 62 are both formed along the ZY plane.

The bridging portion 63 bridges the Z-direction ends of the longitudinal straight portion 61 and the longitudinal straight portion 62. The bridging portion 63 has a bridging portion between the longitudinal straight portion 61 and the longitudinal straight portion 62 in the Z direction. The bridging portion 63 is disposed at the Z-direction end of the magnet 25. The bridging portion 63 extends from the Z-direction end 61a of the longitudinal straight portion 61 toward the Z direction, bends in the X direction, and then bends further in the Z direction to connect to the Z-direction end of the longitudinal straight portion 62. The bridging portion 63 is included in the end region 25b, which is more outer in the Z direction than the central region 25a.

The peripheral magnet section 60 has a longitudinal straight section 61 and a longitudinal straight section 62 that are divided into a predetermined length and assembled in a straight line. The magnets that make up the longitudinal straight section 61 and the longitudinal straight section 62 are all permanent magnets. The bridging section 63 is also divided into a predetermined length and assembled. The magnets that make up the bridging section 63 are all permanent magnets.

The radial thickness of the peripheral magnet portion 60 along the ZX plane can be made approximately equal at the longitudinal straight portion 61, the longitudinal straight portion 62, and the bridging portion 63. The radial thickness of the peripheral magnet portion 60 along the ZX plane can be made smaller at the corner portion of the bridging portion 63 than at the longitudinal straight portion 61 and the longitudinal straight portion 62.

As shown in Figures 4 and 5, the central magnet section 50 is formed in a straight line or rod shape in the Z direction, which is the longitudinal direction. The central magnet section 50 is divided into a predetermined length and assembled in a straight line. Each magnet that constitutes the central magnet section 50 is a permanent magnet. The central magnet section 50 is not in contact with the peripheral magnet section 60. The central magnet section 50 is spaced apart from the peripheral magnet section 60.

The cathode device 10 includes a magnet unit scanning section 29 that moves the magnet unit 21 along a swing direction, which is one scanning direction. The swing direction is an X direction perpendicular to a Z direction in which the magnets 25 are erected in the magnet unit 21.
The magnet unit scanning unit 29 changes the position of the magnet unit 21 with respect to the target 23. The magnet unit scanning unit 29 changes the positions of the multiple magnets 25 with respect to the target 23. The magnet unit scanning unit 29 can swing the multiple magnets 25 without changing the relative positional relationship between them. In other words, each of the magnets 25 can be moved (swinged) by the magnet unit scanning unit 29 with respect to the target 23 in parallel to the particle emission surface of the target 23.

When viewed from the Y direction, the area in which the magnet unit 21 is scanned by the magnet unit scanning section 29 is called the oscillation area. Note that the expression "along the oscillation area" is sometimes used to mean "along the ZX plane." When viewed from the Y direction, the oscillation area has a substantially rectangular outline.

The magnet unit scanning part 29 is composed of, for example, a rail extending along the scanning direction, rollers attached to each of the two ends in the X direction of the cathode unit 22, and a plurality of motors for rotating each of the rollers. The magnet unit scanning part 29 may be composed of an LM guide or the like having a rail extending along the scanning direction.
The rail of the magnet unit scanning part 29 has a width in the scanning direction (X direction) that is equal to or greater than that of the target 23. Note that the magnet unit scanning part 29 may be embodied in other configurations as long as it is possible to move the multiple magnets 25 as a unit along the scanning direction.

A magnetic field line tilt mechanism is provided on the magnets 25 at the end of the magnet unit 21 in the X direction, which is the oscillation direction, at the oscillation end and oscillation start ends. The magnetic field line tilt mechanism will be described later.

The magnetic field line tilt mechanism in this embodiment has a magnet 25 located at one of the oscillation ends of the oscillation region, the magnet 25 having an oscillation end central magnet portion 50A that is smaller than the central magnet portion 50 of the adjacent magnet 25.
5, the oscillation end central magnet section 50A is surrounded by the peripheral magnet section 60, similar to the central magnet section 50. In other words, the oscillation end central magnet section 50A is disposed in approximately the same position as the central magnet section 50 with respect to the yoke 31. The oscillation end central magnet section 50A is disposed in approximately the center position between the longitudinal straight section 61 and the longitudinal straight section 62 in the X direction.

The difference between the swing end central magnet section 50A and the central magnet section 50 is that the width dimension in the X direction is smaller. The swing end central magnet section 50A is formed to have a smaller volume than the central magnet section 50. The swing end central magnet section 50A has a smaller width dimension in the X direction than the central magnet section 50. The swing end central magnet section 50A has a smaller width dimension in the X direction than the central magnet section 50 over its entire length in the Z direction. The swing end central magnet section 50A has a length dimension in the Z direction that is the same as the length dimension in the Z direction of the central magnet section 50. The swing end central magnet section 50A has a thickness dimension in the Y direction that is the same as the thickness dimension in the Y direction of the central magnet section 50. The swing end central magnet section 50A can have approximately the same XY cross-sectional shape over its entire length in the Z direction. The swing end central magnet section 50A is fixed to the yoke 31, just like the central magnet section 50.

The magnetic force density of the oscillating end central magnet section 50A as a magnetic body is approximately the same as that of the central magnet section 50. In other words, the oscillating end central magnet section 50A is formed using approximately the same magnet as the central magnet section 50.
As described below, the oscillation end central magnet section 50A is not limited to the above configuration as long as the magnetic field lines formed by the magnet 25 at one end are inclined in the X direction toward the other oscillation end compared to when there is no oscillation end central magnet section 50A. For example, the oscillation end central magnet section 50A may have a configuration that has approximately the same volume as the central magnet section 50 but generates a weaker magnetic force.

In the cathode unit 22 of this embodiment, as shown in Figures 3 and 4, when sputter particles are emitted by the magnet unit scanning section 29 to form a film, the magnet unit 21 is moved back and forth between the oscillation end position Reverse and the oscillation end position Forward.

In the cathode unit 22, a multiple magnet consisting of multiple magnets 25 is grouped together to form the magnet unit 21. In the cathode unit 22, the magnet unit scanning section 29 moves the magnet unit 21 from the center position center in the oscillation direction (X direction) to the right in Figures 3 and 4 to the oscillation end position Forward, then from the oscillation end position Forward to the oscillation end position Reverse to the left via the center position center, and then from the oscillation end position Reverse to the center position, completing one scan. In the cathode unit 22, this scan is repeated multiple times.

At the same time, in the magnet unit 21, the central magnet section 50 and the peripheral magnet section 60 form a magnetic field in each magnet 25. In the magnet 25, the central magnet section 50, the peripheral magnet section 60, and the yoke 31 form a magnetic circuit. At this time, in the magnet 25 at the oscillation end, the oscillation end central magnet section 50A, the peripheral magnet section 60, and the yoke 31 form a magnetic circuit. In other words, the magnet 25 at the oscillation end is equipped with the oscillation end central magnet section 50A, which is a magnetic field line tilt mechanism, so that the magnet unit 21 performs scanning while maintaining a state in which different magnetic field lines are formed in the adjacent magnets 25 and the magnet 25 that is closer to the center in the X direction.

Next, we will explain how a film is formed on a glass substrate 11 using the sputtering device 1 according to this embodiment.

First, the glass substrate 11 is carried from the outside to the inside of the sputtering apparatus 1 and placed on a positioning member in the load/unload chamber 2, where the glass substrate 11 is aligned (see FIG. 1).
Next, the glass substrate 11 is supported by a robot hand of the transfer device 3 a and taken out of the load/unload chamber 2. Then, the glass substrate 11 is transferred to the film formation chamber 4 via the transfer chamber 3.

In the film formation chamber 4, the substrate holding part 13 is rotated by the drive part and placed in a horizontal placement position. Furthermore, the lift pins are placed in a preparation position protruding upward from the substrate holding part 13 by a lift pin moving part (not shown).
In this state, the glass substrate 11 that has reached the film formation chamber 4 is inserted above the substrate holding portion 13 by the transport device 3a.

Then, the robot hand of the transport device 3a descends and approaches the substrate holding unit 13, so that the glass substrate 11 is placed on the lift pins in a state aligned with a predetermined position on the substrate holding unit 13. After that, the robot hand of the transport robot 3a retreats to the transport chamber 3. Then, the lift pins descend, and the glass substrate 11 is supported on the substrate holding unit 13.

Then, the substrate holder 13 is rotated, and the glass substrate 11, while held by the substrate holder 13, rises to reach the vertical processing position. As a result, the film formation port 4b is almost blocked by the glass substrate 11, and the glass substrate 11 is held at the film formation position. In this state, a predetermined gas atmosphere is created by the gas control unit 14, plasma is generated by the control unit 26, and film formation is performed by sputtering. The formation of a magnetic field by the magnet unit 21 during film formation will be described later.

When the film formation process is completed, the substrate holding portion 13 is rotated so that the glass substrate 11 reaches a horizontal placement position while being held by the substrate holding portion 13 .
After the film formation process, the glass substrate 11 is removed from the film formation chamber 4 by the transfer device 3a. Then, the glass substrate 11 is removed from the load/unload chamber 2 via the transfer chamber 3.

The function of the magnet unit 21 in this embodiment is described below.

FIG. 21 is a diagram for explaining the action of the magnetic field line tilt mechanism in this embodiment, and is a schematic diagram showing the direction of the magnetic field lines in the case where there is no magnetic field line tilt mechanism.
First, a case where there is no magnetic field line tilting mechanism, that is, where the swing end central magnet portion 50A is not provided and all magnets 25 have the same central magnet portion 50 will be described.

As described above, the magnetic field formed by the magnet 25 generates plasma between the surface 23a of the target 23 and the glass substrate 11. In this state, a film is formed on the surface of the glass substrate 11 by setting the sputtering conditions described below.

During sputtering, magnetic field lines are formed from the N-pole peripheral magnet portion 60 to the S-pole central magnet portion 50. The central magnet portion 50, the peripheral magnet portion 60, and the yoke 31 form a magnetic circuit.
This causes the electrons to track along the magnetic field lines.

At this time, at the position of the oscillation end of the oscillation range of the target 23, as shown in Fig. 21, the magnetic field lines from the N-pole peripheral magnet portion 60 are directed toward the nearby anode 28, and the magnetic field line density decreases on the surface 23a of the target 23. In other words, the density of tracked electrons becomes insufficient, and the plasma density becomes insufficient. As a result, no erosion region is formed on the surface 23a of the target 23, and non-erosion regions are formed at both ends in the X direction.
As the magnetic field lines from the N-pole peripheral magnet portion 60 move in the Y-direction, they tilt leftward in the X-direction toward the anode 28 .

Furthermore, magnetic lines of force are formed from the N-pole peripheral magnet section 60 to the S-pole central magnet section 50. These magnetic lines of force cause electrons to circulate along the ZX plane around the central magnet section 50, which is surrounded by the peripheral magnet section 60, on the surface 23a of the target 23. At this time, the electrons that have moved in the Z direction along the end of the longitudinal direction of the magnet 25, that is, along the central magnet section 50, slow down their movement speed and increase in density near the point where they bend in the X direction along the bridging section 63.

As a result, the density of electrons decreases at the positions where the electrons bend from the X direction to the Z direction along the bridging portion 63 and the peripheral magnet portion 60. As a result, erosion on the surface 23a of the target 23 decreases, and non-erosion regions are formed. This phenomenon occurs in the two magnets 25 at both ends in the X direction (oscillation ends) because the directions of the electrons circulating around the central magnet portion 50 are reversed in adjacent magnets 25, causing them to cancel each other out. Moreover, at both ends in the X direction, the positions where the non-erosion regions are formed are opposite in the Z direction. In other words, the positions where the non-erosion regions are formed at both ends in the X direction are diagonal positions of the target 23.

As a result, in the absence of a magnetic field line tilt mechanism, non-erosion regions are formed at two diagonal corners of the target 23. Furthermore, when non-erosion regions are formed in this way, other non-erosion regions are likely to be formed in addition to the two diagonal corners and both ends in the X direction. This is because when non-erosion regions are formed, the applied power supply is not consumed in plasma generation and becomes surplus. This surplus power is redistributed to areas other than the non-erosion regions at both ends in the X direction and the two diagonal corners, or is absorbed as an overall voltage (power) fluctuation. Therefore, it is thought that the plasma generation conditions fluctuate depending on the position on the surface of the target 23, just as when a voltage fluctuation occurs.

Next, we will explain the case where a magnetic field line tilt mechanism is included.

FIG. 6 is a diagram for explaining the action of the magnetic field line tilt mechanism, and is a schematic diagram showing the direction of the magnetic field lines when the oscillation end central magnet section 50A is present.
During sputtering, in the magnet 25 that is the oscillation end of the oscillation range, magnetic field lines are formed from the N-pole peripheral magnet portion 60 to the S-pole central magnet portion 50A of the oscillation end, as shown in Fig. 6. At this time, a magnetic circuit is formed by the central magnet portion 50A of the oscillation end, the peripheral magnet portion 60, and the yoke 31.
This causes the electrons to track along the magnetic field lines.

At this time, as shown in FIG. 6, in the magnet 25 that is the oscillation end, the oscillation end central magnet part 50A, which is smaller than the central magnet part 50, tilts the magnetic field lines from the N-pole peripheral magnet part 60 so that they do not point toward the anode 28. In other words, the magnetic field lines that point from the N-pole peripheral magnet part 60 in the Y direction perpendicular to the magnetic pole plane 30 are tilted to the right in the X direction compared to when the oscillation end central magnet part 50A is not present. In other words, by providing the oscillation end central magnet part 50A in the magnet 25, the magnetic field lines formed at one oscillation end can be pushed toward the other oscillation end.

As a result, the magnetic field line density does not decrease on the surface 23a of the target 23. In other words, in the magnet 25, which is the oscillation end, the tracking electron density is sufficiently maintained, and the plasma density is also sufficiently maintained. As a result, the non-erosion regions formed on both ends of the surface 23a of the target 23 in the X direction can be suppressed.

In addition, in the magnet 25 that is the oscillation end, a magnetic circuit is formed by the oscillation end central magnet part 50A and the peripheral magnet part 60, and a magnetic field line is formed from the peripheral magnet part 60 of the N pole to the oscillation end central magnet part 50A of the S pole. As a result, the electrons circulating around the oscillation end central magnet part 50A surrounded by the peripheral magnet part 60 on the surface 23a of the target 23 do not slow down their movement speed at the longitudinal end of the magnet 25. Therefore, at the Z-direction end of the magnet 25, the increase in electron density is suppressed. In other words, in the magnet 25 that is the oscillation end, the movement speed of the electrons that have moved in the Z direction along the oscillation end central magnet part 50A does not slow down near the area where they bend in the X direction along the bridging part 63. Also, the increase in electron density is suppressed near the area where they bend in the X direction along the bridging part 63.

As a result, in the magnet 25 at the oscillation end, a decrease in electron density does not occur at the position where the electrons bend from the longitudinal straight portion 61 or the longitudinal straight portion 62 along the bridge portion 63 from the X direction to the Z direction. As a result, in the two magnets 25 at both ends in the X direction, the formation of non-erosion regions on the surface 23a of the target 23 can be suppressed. In other words, by providing the oscillation end central magnet portion 50A on the two magnets 25 at both ends (oscillation ends) in the X direction, the formation of non-erosion regions at two diagonal corners can be suppressed. This makes it possible to suppress the occurrence of voltage fluctuations in the target 23. In the target 23, the formation of non-erosion regions at the X direction end can be suppressed. Therefore, in the target 23, it is possible to suppress the formation of other non-erosion regions other than the end in the X direction and the two diagonal corners.

According to the sputtering device 1 of this embodiment, by providing the oscillation end central magnet part 50A as a magnetic field line tilt mechanism, the magnetic field lines formed by the magnet 25 at the oscillation end can be suppressed so as not to be directed toward the anode 28. This allows the sputtering device 1 to reduce the number of electrons absorbed by the anode 28. In other words, the direction of the magnetic field lines formed by the magnet 25 can be set to the Y direction, or can be tilted to the right of the Y direction in FIG. 6. In other words, the magnetic field lines formed by the magnet 25 can be tilted inward of the contour of the target 23 rather than in the thickness direction of the target 23. This allows the sputtering device 1 to reduce the total area in which non-erosion regions are formed.

In other words, the sputtering device 1 can suppress the generation of particles by reducing the generation of non-erosion regions. In other words, the sputtering device 1 can reduce the formation of erosion-non-erosion boundary regions, which are areas where the boundary between non-erosion regions and erosion regions becomes unclear and causes particle generation.

Furthermore, the sputtering apparatus 1 can prevent the redistribution of the supplied power by suppressing the occurrence of non-erosion regions. This allows the sputtering apparatus 1 to suppress spike fluctuations in the discharge voltage and suppress partial fluctuations in the plasma generation conditions due to voltage fluctuations, etc. Therefore, the sputtering apparatus 1 can suppress particle generation and variations in the distribution of film quality characteristics such as film thickness distribution and sheet resistance value distribution.

A second embodiment of a sputtering apparatus according to the present invention will now be described with reference to the drawings.
7 is an enlarged cross-sectional view showing an end of the magnet unit in this embodiment. The difference between this embodiment and the first embodiment is the magnetic field line tilt mechanism. The same reference numerals are used to designate the same components as those in the first embodiment, and the description thereof will be omitted.

As shown in FIG. 7, in the magnet unit 21 of this embodiment, the magnet 25 located at one of the swing ends of the swing region has a swing end longitudinal straight portion 60A that is larger than the peripheral magnet portion 60 of the adjacent magnet 25. The swing end longitudinal straight portion 60A constitutes a magnetic field line tilt mechanism.

The oscillating end longitudinal straight portion 60A is disposed at approximately the same position as the longitudinal straight portion 61 with respect to the yoke 31, similar to the peripheral magnet portion 60 of the adjacent magnet 25. The oscillating end longitudinal straight portion 60A is disposed parallel to the central magnet portion 50, similar to the peripheral magnet portion 60. The oscillating end longitudinal straight portion 60A is connected at both ends in the Z direction to the bridging portion 63, similar to the peripheral magnet portion 60.

The oscillation end longitudinal straight portion 60A is formed only in the portion of the magnet 25 located at the oscillation end that corresponds to the longitudinal straight portion 61 located closer to the oscillation end than the central magnet portion 50. In other words, the oscillation end longitudinal straight portion 60A is not formed in the portion of the peripheral magnet portion 60 that corresponds to the longitudinal straight portion 62 that is closer to the adjacent magnet 25 than the central magnet portion 50. The oscillation end longitudinal straight portion 60A has the same overall length in the Z direction as the distance from the central magnet portion 50 in the X direction.

The oscillating end longitudinal straight portion 60A is formed larger than the longitudinal straight portion 61 and the longitudinal straight portion 62 of the adjacent magnet 25. At a position sandwiched between the bridging portions 63 located at both ends in the Z direction, the oscillating end longitudinal straight portion 60A has a larger width dimension in the X direction than the longitudinal straight portion 61 and the longitudinal straight portion 62. The oscillating end longitudinal straight portion 60A has the same width dimension in the X direction over its entire length in the Z direction.
In addition, the width dimension of the swing end longitudinal straight portion 60A in the X direction at the portion connected to the bridging portion 63 may be equal to that of the bridging portion 63.

The thickness of the swing end longitudinal straight portion 60A in the radial direction along the ZX plane can be formed to be approximately equal to the thicknesses of the longitudinal straight portion 61, the longitudinal straight portion 62, and the bridging portion 63.
The oscillating end longitudinal straight portion 60A is a magnet of the same polarity as the peripheral edge magnet portion 60. The oscillating end longitudinal straight portion 60A, the longitudinal straight portion 62, the bridging portion 63, and the central magnet portion 50 form a magnetic circuit. The oscillating end longitudinal straight portion 60A is divided into predetermined lengths and combined, similar to the longitudinal straight portions 61 and 62. Each of the magnets that form the oscillating end longitudinal straight portion 60A is a permanent magnet.

The magnetic force density of the oscillating end longitudinal straight portion 60A as a magnetic body is approximately the same as that of the longitudinal straight portion 61 and the longitudinal straight portion 62. In other words, the oscillating end longitudinal straight portion 60A is formed using approximately the same magnet as the central magnet portion 50.
As described below, the swing end longitudinal straight portion 60A is not limited to the above configuration as long as the magnetic field lines formed by the magnet 25 at one end are inclined in the X direction toward the other swing end compared to the case where there is no swing end longitudinal straight portion 60A. For example, the swing end longitudinal straight portion 60A may be configured to have approximately the same volume as the central magnet portion 50 and to form a stronger magnetic force.

FIG. 8 is a diagram for explaining the action of the magnetic field line tilt mechanism, and is a schematic diagram showing the direction of the magnetic field lines when the oscillation end longitudinal straight portion 60A is present.
During sputtering, in the magnet 25 that is the oscillation end of the oscillation range, magnetic field lines are formed from the N-pole peripheral magnet portion 60 to the S-pole central magnet portion 50, as shown in Fig. 8. At this time, a magnetic circuit is formed by the oscillation end longitudinal straight portion 60A, the longitudinal straight portion 62, the bridging portion 63, the central magnet portion 50, and the yoke 31.
This causes the electrons to track along the magnetic field lines.

At this time, in the magnet 25 that serves as the oscillation end, as shown in Fig. 8, the oscillation end longitudinal straight portion 60A, which is larger than the longitudinal straight portion 61, tilts the magnetic field lines from the N-pole peripheral magnet portion 60 so that they do not point toward the anode 28. In other words, the magnetic field lines that point from the N-pole peripheral magnet portion 60 in the Y direction perpendicular to the magnetic pole plane 30 are tilted to the right in the X direction compared to when there is no oscillation end longitudinal straight portion 60A. In other words, by providing the oscillation end longitudinal straight portion 60A in the magnet 25, it is possible to push the magnetic field lines formed at one oscillation end toward the other oscillation end.
In addition, in the magnet 25 which is the oscillating end, the magnetic field lines formed by the oscillating end longitudinal straight portion 60A and the central magnet portion 50 tilt to the right in the X direction, but the magnetic field lines formed by the longitudinal straight portion 62 and the central magnet portion 50 can be regarded as being substantially the same as when the oscillating end longitudinal straight portion 60A is not present.

As a result, the magnetic field line density does not decrease on the surface 23a of the target 23. In other words, in the magnet 25, which is the oscillation end, the tracking electron density is sufficiently maintained, and the plasma density is also sufficiently maintained. As a result, the non-erosion regions formed on both ends of the surface 23a of the target 23 in the X direction can be suppressed.

In addition, in the magnet 25 that is the oscillation end, a magnetic circuit is formed by the oscillation end longitudinal straight portion 60A, the longitudinal straight portion 62, the bridging portion 63, and the central magnet portion 50, and a magnetic field line is formed from the peripheral magnet portion 60 of the N pole to the central magnet portion 50A of the oscillation end of the S pole. As a result, the electrons circulating around the central magnet portion 50 surrounded by the peripheral magnet portion 60 on the surface 23a of the target 23 do not slow down their movement speed at the longitudinal end of the magnet 25. Therefore, at the longitudinal Z-direction end of the magnet 25, the increase in electron density is suppressed. In other words, in the magnet 25 that is the oscillation end, the movement speed of the electrons that have moved in the Z direction along the central magnet portion 50 does not slow down near the bend in the X direction along the bridging portion 63. Also, the increase in electron density is suppressed near the bend in the X direction along the bridging portion 63.

As a result, in the magnet 25 that is the oscillation end, a decrease in electron density does not occur at the position where the electrons bend from the oscillation end longitudinal straight portion 60A to the Z direction along the bridging portion 63, or at the position where the electrons bend from the X direction to the Z direction along the bridging portion 63 from the longitudinal straight portion 62. As a result, the formation of non-erosion regions on the surface 23a of the target 23 can be suppressed by the two magnets 25 that are both ends in the X direction. In other words, by providing the oscillation end longitudinal straight portion 60A on the two magnets 25 that are both ends (oscillation ends) in the X direction, the formation of non-erosion regions at two diagonal positions can be suppressed. This makes it possible to suppress the occurrence of voltage fluctuations in the target 23. In the target 23, the formation of non-erosion regions at the X direction end can be suppressed. Therefore, in the target 23, it is possible to suppress the formation of other non-erosion regions other than the end in the X direction and the two diagonal positions.

According to the sputtering device 1 of this embodiment, by providing the oscillating end longitudinal straight section 60A as a magnetic field line tilting mechanism, the magnetic field lines formed by the magnet 25 at the oscillating end can be prevented from being directed toward the anode 28. This allows the sputtering device 1 to reduce the number of electrons absorbed by the anode 28. In other words, the sputtering device 1 can make the magnetic field lines formed by the magnet 25 to be in the Y direction or tilt them to the right in FIG. 8 from the Y direction. In other words, the magnetic field lines formed by the magnet 25 can be tilted inward of the contour of the target 23 from the thickness direction of the target 23. This allows the sputtering device 1 to reduce the total area in which non-erosion regions are formed.

In other words, the sputtering device 1 can suppress the generation of particles by reducing the generation of non-erosion regions. In other words, the sputtering device 1 can reduce the formation of erosion-non-erosion boundary regions, which are areas where the boundary between non-erosion regions and erosion regions becomes unclear and causes particle generation.

Furthermore, the sputtering apparatus 1 can prevent the redistribution of the supplied power by suppressing the occurrence of non-erosion regions. This allows the sputtering apparatus 1 to suppress spike fluctuations in the discharge voltage and suppress partial fluctuations in the plasma generation conditions due to voltage fluctuations, etc. Therefore, the sputtering apparatus 1 can suppress particle generation and variations in the distribution of film quality characteristics such as film thickness distribution and sheet resistance value distribution.

A third embodiment of a sputtering apparatus according to the present invention will now be described with reference to the drawings.
9 is an enlarged cross-sectional view showing an end of the magnet unit in this embodiment. The present embodiment differs from the first and second embodiments in terms of the magnetic field line tilt mechanism, and other configurations corresponding to those in the first and second embodiments are given the same reference numerals and will not be described.

As shown in FIG. 9, the magnet unit 21 in this embodiment has a swing-end inclined central magnet section 50B in which the magnet 25 located at one swing end of the swing region is inclined toward the other swing end relative to the central magnet section 50 of the adjacent magnet 25. The swing-end inclined central magnet section 50B constitutes a magnetic field line inclination mechanism.

As shown in FIG. 9, the sway end inclined central magnet section 50B is surrounded by the peripheral magnet section 60, similar to the central magnet section 50. In other words, the sway end inclined central magnet section 50B is positioned at approximately the same position as the central magnet section 50 relative to the yoke 31 when viewed in the Y direction. The sway end inclined central magnet section 50B is positioned approximately in the center between the longitudinal straight section 61 and the longitudinal straight section 62 in the X direction.

The difference between the sway end inclined central magnet section 50B and the central magnet section 50 is that the mounting direction relative to the yoke 31 is inclined. The sway end inclined central magnet section 50B is formed to have the same volume as the central magnet section 50. The sway end inclined central magnet section 50B has the same width dimension in the X direction as the central magnet section 50. The sway end inclined central magnet section 50B has the same width dimension in the X direction as the central magnet section 50 over its entire length in the Z direction. The sway end inclined central magnet section 50B has the same length dimension in the Z direction as the central magnet section 50. The sway end inclined central magnet section 50B has the same thickness dimension in the Y direction as the central magnet section 50. The sway end inclined central magnet section 50B can have the same XY cross-sectional shape as the central magnet section 50 over its entire length in the Z direction.

The sway end inclined central magnet part 50B is fixed to the yoke 31 so that the surface facing the target 23 is inclined toward the other sway end with respect to the magnetic pole plane 30. A groove may be formed in the yoke 31 to mount the sway end inclined central magnet part 50B. It is also possible to prevent the sway end inclined central magnet part 50B from protruding toward the target 23 beyond the magnetic pole plane 30. Alternatively, the end face (magnetic pole face) of the sway end inclined central magnet part 50B that is close to one of the sway ends may protrude toward the target 23 beyond the magnetic pole plane 30. The sway end inclined central magnet part 50B may be arranged in an inclined state similar to the auxiliary magnet 27 described later.

The magnetic force density of the oscillation end inclined central magnet section 50B as a magnetic body is approximately the same as that of the central magnet section 50. In other words, the oscillation end inclined central magnet section 50B is formed using approximately the same magnet as the central magnet section 50.
As described below, the oscillation end inclined central magnet section 50B is not limited to the above configuration as long as the magnetic field lines formed by the magnet 25 at one end are inclined in the X direction toward the other oscillation end compared to when there is no oscillation end inclined central magnet section 50B. For example, the oscillation end inclined central magnet section 50B may be configured to have a smaller volume than the central magnet section 50 and to generate a stronger magnetic force. Alternatively, the oscillation end inclined central magnet section 50B may be configured to have a larger volume than the central magnet section 50 and to generate a weaker magnetic force.

FIG. 10 is a diagram for explaining the action of the magnetic field line tilt mechanism, and is a schematic diagram showing the direction of the magnetic field lines when the oscillation end inclined central magnet section 50B is present.
During sputtering, in the magnet 25 that is the oscillation end of the oscillation range, magnetic field lines are formed from the N-pole peripheral magnet portion 60 to the S-pole oscillation end inclined central magnet portion 50B, as shown in Fig. 10. At this time, a magnetic circuit is formed by the oscillation end inclined central magnet portion 50B, the peripheral magnet portion 60, and the yoke 31.
This causes the electrons to track along the magnetic field lines.

At this time, as shown in FIG. 10, in the magnet 25 that is the oscillation end, the oscillation end inclined central magnet part 50B, which is inclined compared to the central magnet part 50, inclines the magnetic field lines from the N-pole peripheral magnet part 60 so that they do not point toward the anode 28. In other words, the magnetic field lines that point from the N-pole peripheral magnet part 60 in the Y direction perpendicular to the magnetic pole plane 30 are inclined to the right in the X direction compared to when the oscillation end inclined central magnet part 50B is not present. In other words, by providing the oscillation end inclined central magnet part 50B in the magnet 25, the magnetic field lines formed at one oscillation end can be pushed toward the other oscillation end.

As a result, the magnetic field line density does not decrease on the surface 23a of the target 23. In other words, in the magnet 25, which is the oscillation end, the tracking electron density is sufficiently maintained, and the plasma density is also sufficiently maintained. As a result, the non-erosion regions formed on both ends of the surface 23a of the target 23 in the X direction can be suppressed.

In addition, in the magnet 25 that is the oscillation end, a magnetic circuit is formed by the oscillation end inclined central magnet part 50B and the peripheral magnet part 60, and a magnetic field line is formed from the peripheral magnet part 60 of the N pole to the oscillation end inclined central magnet part 50B of the S pole. As a result, the electrons circulating around the oscillation end inclined central magnet part 50B surrounded by the peripheral magnet part 60 on the surface 23a of the target 23 do not slow down their movement speed at the longitudinal end of the magnet 25. Therefore, at the Z-direction end of the magnet 25, the increase in electron density is suppressed. In other words, in the magnet 25 that is the oscillation end, the movement speed of the electrons that have moved in the Z direction along the oscillation end inclined central magnet part 50B does not slow down near the area where they bend in the X direction along the bridging part 63. Also, the increase in electron density is suppressed near the area where they bend in the X direction along the bridging part 63.

As a result, no decrease in electron density occurs at the position where the electrons bend from the X direction to the Z direction along the bridging portion 63 from the longitudinal straight portion 61 or the longitudinal straight portion 62. As a result, in the two magnets 25 at both ends in the X direction, the formation of non-erosion regions on the surface 23a of the target 23 can be suppressed. In other words, by providing the oscillating end inclined central magnet portion 50B on the two magnets 25 at both ends (oscillating ends) in the X direction, the formation of non-erosion regions at two diagonal locations can be suppressed. This makes it possible to suppress the occurrence of voltage fluctuations in the target 23. In the target 23, the formation of non-erosion regions at the X direction ends can be suppressed. Therefore, in the target 23, it is possible to suppress the formation of other non-erosion regions other than the X direction ends and the two diagonal locations.

According to the sputtering device 1 of this embodiment, by providing the oscillation end inclined central magnet part 50B as a magnetic field line inclination mechanism, the magnetic field lines formed by the magnet 25 at the oscillation end can be suppressed so as not to be directed toward the anode 28. This allows the sputtering device 1 to reduce the number of electrons absorbed by the anode 28. In other words, the direction of the magnetic field lines formed by the magnet 25 can be set to the Y direction, or can be inclined to the right of the Y direction in FIG. 10. In other words, the magnetic field lines formed by the magnet 25 can be inclined toward the inside of the contour of the target 23 rather than the thickness direction of the target 23. This allows the sputtering device 1 to reduce the total area in which non-erosion regions are formed.

In other words, the sputtering device 1 can suppress the generation of particles by reducing the generation of non-erosion regions. In other words, the sputtering device 1 can reduce the formation of erosion-non-erosion boundary regions, which are areas where the boundary between non-erosion regions and erosion regions becomes unclear and causes particle generation.

Furthermore, the sputtering apparatus 1 can prevent the redistribution of the supplied power by suppressing the occurrence of non-erosion regions. This allows the sputtering apparatus 1 to suppress spike fluctuations in the discharge voltage and suppress partial fluctuations in the plasma generation conditions due to voltage fluctuations, etc. Therefore, the sputtering apparatus 1 can suppress particle generation and variations in the distribution of film quality characteristics such as film thickness distribution and sheet resistance value distribution.

In this embodiment, in addition to the magnet 25 located at one of the swing ends, the magnet located next to it can also be provided with a swing end inclined central magnet section 50B as a magnetic field line tilt mechanism. Note that FIG. 10 shows an example of a configuration in which swing end inclined central magnet sections 50B are provided on two magnets 25 adjacent to one swing end.

A fourth embodiment of the sputtering apparatus according to the present invention will now be described with reference to the drawings.
11 is an enlarged cross-sectional view showing an end of the magnet unit in this embodiment. The difference between this embodiment and the first to third embodiments is the magnetic field line tilt mechanism. Other configurations corresponding to the first to third embodiments are given the same reference numerals and the description thereof will be omitted.

As shown in FIG. 11, in the magnet unit 21 of this embodiment, the magnet 25 located at one of the oscillation ends of the oscillation region has an auxiliary magnet 27, unlike the adjacent magnet 25. The auxiliary magnet 27 constitutes a magnetic field line tilt mechanism.

The auxiliary magnet 27 is disposed on the outer edge of the oscillation end and oscillation start ends of the magnet 25 at the end in the X direction, which is the oscillation direction. The auxiliary magnet 27 is formed in a straight line parallel to the longitudinal straight portion 61. The auxiliary magnet 27 has the same polarity as the longitudinal straight portion 61 that is closest to it. In other words, if the longitudinal straight portion 61 is an N pole, the auxiliary magnet 27 will have the same polarity as the N pole.
The auxiliary magnets 27 are not provided at any positions other than those closest to the longitudinal straight portions 61 of the magnets 25 located on the outermost periphery at both ends in the X direction. In other words, the auxiliary magnets 27 are provided only at positions corresponding to the ends of the target 23 in the X direction.

The auxiliary magnet 27 has the same length as the nearest longitudinal straight portion 61. In other words, the Z direction dimension of the auxiliary magnet 27 is approximately equal to the Z direction dimension of the magnets 25 located on the outermost periphery at both ends in the X direction. Here, the Z direction dimension of the auxiliary magnet 27 can be set to about plus or minus 5 mm with respect to the Z direction dimension of the magnets 25 located on the outermost periphery at both ends in the X direction.

The auxiliary magnet 27 is a magnet with a rectangular cross section, similar to the nearest longitudinal straight portion 61. The auxiliary magnet 27 has the same cross-sectional shape over its entire length in the Z direction. The auxiliary magnet 27 is very close to the nearest longitudinal straight portion 61 in the X direction. Specifically, as shown in FIG. 11, the auxiliary magnet 27 is in contact with the nearest longitudinal straight portion 61 very close to it in the X direction, or it can be spaced apart by a predetermined X-direction distance, as described below.

The auxiliary magnet 27 forms a ridge 27a whose convex portion protruding toward the target 23 continues in the Z direction with respect to the ZX plane formed by the end face (magnetic pole plane) 30 of the peripheral magnet portion 60 of the magnet 25. The tip of the ridge 27a may protrude toward the target 23 beyond the magnetic pole plane 30. The tip of the ridge 27a may be located at the same position as the magnetic pole plane 30 in the Y direction. The tip of the ridge 27a may be farther away from the target 23 than the magnetic pole plane 30.
In the case of auxiliary magnets 27 having a rectangular cross section, the protrusions 27a may be formed in a convex shape at the corners of the magnetic pole face, or at predetermined positions in the width direction of the magnetic pole face.

The auxiliary magnet 27 is inclined with respect to the magnetic pole plane 30. That is, as shown in FIG. 11, the end face of the auxiliary magnet 27 that becomes the magnetic pole may be inclined by an angle θ with respect to the ZX plane. Here, the angle θ is inclined so as to rotate in the X direction with the Z direction as the axis with respect to the Y direction that is the normal to the surface 23a of the target 23. The angle θ can be in the range of 0 deg to 90 deg, more preferably in the range of 0 deg to 60 deg, further in the range of 0 deg to 45 deg, or in the range of 0 deg to 30 deg, with the direction in which the magnetic pole surface of the auxiliary magnet 27 is inclined toward the inside of the swing range of the magnet unit 21 being positive.

The magnetic strength of the auxiliary magnet 27 is equal to or smaller than the magnetic strength of the nearest longitudinal straight portion 61. Specifically, the magnetic strength of the auxiliary magnet 27 can be in the range of 1/2 to 3/4, or 1/2 to 1/3, of the magnetic strength of the nearest longitudinal straight portion 61. The magnetic strength of the nearest longitudinal straight portion 61 can be 1 to 1.5 times, or 1.1 to 1.4 times, for example, approximately 1.39 times, of the magnetic strength of the auxiliary magnet 27.

As shown in Fig. 11, the auxiliary magnet 27 is fixed to the yoke 31 via an auxiliary yoke 31d. The auxiliary yoke 31d is adjacent to the end of the yoke 31 in the X direction. The auxiliary yoke 31d can also be integrated with the yoke 31. In this case, the auxiliary yoke 31d is made of the same material as the yoke 31. The auxiliary yoke 31d is made of a magnetic or dielectric material. The auxiliary yoke 31d can be made of SUS430 or the like.
The auxiliary magnet 27 is fixed to the auxiliary yoke 31d by a fixing member 27g at a predetermined angle θ. The auxiliary magnet 27 has a magnetic pole face on the opposite side to the target 23 in contact with the auxiliary yoke 31d. As a result, the magnetic force of the auxiliary magnet 27 and the auxiliary yoke 31d is added to the magnetic circuit formed by the central magnet portion 50, the peripheral magnet portion 60, and the yoke 31.

FIG. 12 is a diagram for explaining the function of the magnetic field line tilt mechanism, and is a schematic diagram showing the direction of the magnetic field lines when the auxiliary magnet 27 is present.
During sputtering, at the oscillation end of the magnet unit 21 within the oscillation range, magnetic field lines are formed from the N-pole peripheral magnet section 60 to the S-pole central magnet section 50, as shown in Fig. 12. At this time, a magnetic circuit is formed including the central magnet section 50, the peripheral magnet section 60, and the yoke 31, as well as the auxiliary magnet 27 and the auxiliary yoke 31d.
This causes the electrons to track along the magnetic field lines.

At this time, as shown in FIG. 12, in the magnet 25 that is the oscillation end, the auxiliary magnet 27 along the longitudinal straight portion 61 tilts the magnetic field lines from the N-pole peripheral magnet portion 60 so that they do not point toward the anode 28. In other words, the magnetic field lines that point from the N-pole peripheral magnet portion 60 in the Y direction perpendicular to the magnetic pole plane 30 are tilted to the right in the X direction compared to when there is no auxiliary magnet 27. In other words, by providing the auxiliary magnet 27 in the magnet 25 that is the oscillation end, the magnetic field lines formed at one oscillation end can be pushed toward the other oscillation end.

In other words, in the magnet 25 which is the swing end, the magnetic field lines from the N-pole peripheral magnet portion 60 are inclined to the right in the Y direction perpendicular to the magnetic pole plane 30 or in the X direction so that they are not directed toward the anode 28 by the magnetic field lines from the auxiliary magnet 27.
In addition, in the magnet 25 which is the swing end, the magnetic field lines formed by the auxiliary magnet 27, the longitudinal straight portion 61, and the central magnet portion 50 tilt to the right in the X direction, but the magnetic field lines formed by the longitudinal straight portion 62 and the central magnet portion 50 can be regarded as being almost the same as when the auxiliary magnet 27 is not present.

As a result, the magnetic field line density does not decrease on the surface 23a of the target 23. In other words, in the magnet 25, which is the oscillation end, the tracking electron density is sufficiently maintained, and the plasma density is also sufficiently maintained. As a result, the non-erosion regions formed on both ends of the surface 23a of the target 23 in the X direction can be suppressed.

A magnetic circuit is also formed including the central magnet section 50, the peripheral magnet section 60, the yoke 31, the auxiliary magnet 27, and the auxiliary yoke 31d, and magnetic field lines are formed from the peripheral magnet section 60 with the N pole to the central magnet section 50 with the S pole. As a result, the electrons circulating around the central magnet section 50 surrounded by the peripheral magnet section 60 on the surface 23a of the target 23 do not slow down their movement speed at the longitudinal end of the magnet 25. Therefore, at the longitudinal Z-direction end of the magnet 25, the increase in electron density is suppressed. In other words, in the magnet 25 that is the oscillation end, the movement speed of the electrons that have moved in the Z direction along the central magnet section 50 does not slow down near the area where they bend in the X direction along the bridging section 63. Also, the increase in electron density is suppressed near the area where they bend in the X direction along the bridging section 63.

As a result, no decrease in density occurs at the position where the electrons bend from the X direction to the Z direction along the bridging portion 63 from the longitudinal straight portion 61, or at the position where the electrons bend from the X direction to the Z direction along the bridging portion 63 from the longitudinal straight portion 62. As a result, the formation of non-erosion regions on the surface 23a of the target 23 is suppressed in the two magnets 25 at both ends in the X direction.

In other words, by providing the auxiliary magnets 27 on the two magnets 25 at both ends (oscillation ends) in the X direction, the formation of non-erosion regions at two diagonal corners can be suppressed. This makes it possible to suppress the occurrence of voltage fluctuations in the target 23. In the target 23, the formation of non-erosion regions at the X direction ends can be suppressed. Therefore, in the target 23, it is possible to suppress the tendency for other non-erosion regions to form other than the X direction ends and the two diagonal corners.

According to the sputtering device 1 of this embodiment, by providing an auxiliary magnet 27 as a magnetic field line tilting mechanism, the magnetic field lines formed by the magnet 25 at the swing end can be prevented from being directed toward the anode 28. This allows the sputtering device 1 to reduce the number of electrons absorbed by the anode 28. In other words, the sputtering device 1 can make the magnetic field lines formed by the magnet 25 to be in the Y direction, or tilt them to the right in FIG. 12 from the Y direction. In other words, the magnetic field lines formed by the magnet 25 can be tilted by the auxiliary magnet 27 toward the inside of the contour of the target 23 from the thickness direction of the target 23. This allows the sputtering device 1 to reduce the total area in which non-erosion regions are formed.

In other words, the sputtering device 1 can suppress the generation of particles by reducing the generation of non-erosion regions. In other words, the sputtering device 1 can reduce the formation of erosion-non-erosion boundary regions, which are areas where the boundary between non-erosion regions and erosion regions becomes unclear and causes particle generation.

Furthermore, the sputtering apparatus 1 can prevent the redistribution of the supplied power by suppressing the occurrence of non-erosion regions. This allows the sputtering apparatus 1 to suppress spike fluctuations in the discharge voltage and suppress partial fluctuations in the plasma generation conditions due to voltage fluctuations, etc. Therefore, the sputtering apparatus 1 can suppress particle generation and variations in the distribution of film quality characteristics such as film thickness distribution and sheet resistance value distribution.

Hereinafter, a fifth embodiment of a sputtering apparatus according to the present invention will be described with reference to the drawings.
13 is an enlarged cross-sectional view showing the end of the magnet unit and its vicinity in this embodiment. This embodiment differs from the first to fourth embodiments described above in terms of the magnetic field line tilt mechanism, and other configurations corresponding to the first to fourth embodiments described above are given the same reference numerals and their description will be omitted.

13, the sputtering apparatus 1 in this embodiment has a swing end outer magnet section 35 on the back surface of the anode 28 located around the target 23. The swing end outer magnet section 35 constitutes a magnetic field line tilt mechanism.
The oscillation end external magnet part 35 is disposed on the outer side of the end in the X direction of the oscillation region. The oscillation end external magnet part 35 extends in the Z direction along the contour of the oscillation region. The oscillation end external magnet part 35 is disposed on the outer edge of the oscillation end and oscillation start end with respect to the magnet 25 at the end in the X direction, which is the oscillation direction. The oscillation end external magnet part 35 is formed in a straight line parallel to the longitudinal straight part 61.

The oscillation end external magnet part 35 is disposed on the back surface of the anode 28, i.e., on the surface of the anode 28 that is opposite to the glass substrate 11. The oscillation end external magnet part 35 is disposed along the contour of the target 23. The Z direction length of the oscillation end external magnet part 35 is the same as the Z direction length of the target 23. Alternatively, the Z direction dimension of the oscillation end external magnet part 35 may be approximately equal to the Z direction dimension of the magnets 25 located at both ends of the oscillation region in the X direction.
The swing end outer magnet portion 35 is in contact with the rear surface of the anode 28 .

The oscillating end outer magnet part 35 is a magnet with a rectangular cross section, similar to the nearest longitudinal straight part 61. The oscillating end outer magnet part 35 has an end face facing the target 23 as its magnetic pole. The oscillating end outer magnet part 35 has an end face facing the inside of the oscillating region in the X direction as its magnetic pole. The oscillating end outer magnet part 35 has an end face facing the target 23 with the same polarity as the nearest longitudinal straight part 61. In other words, if the longitudinal straight part 61 is a north pole, then the oscillating end outer magnet part 35 is a north pole of the same polarity.

The magnetic strength of the oscillating end outer magnet part 35 is equal to or smaller than the magnetic strength of the nearest longitudinal straight part 61. The magnetic strength of the oscillating end outer magnet part 35 can be in the range of 1/2 to 3/4 or 1/2 to 1/3 of the magnetic strength of the nearest longitudinal straight part 61.

The portion of the oscillating end outer magnet part 35 that is not in contact with the anode 28 may be covered with a covering part 35a. The covering part 35a is not formed on the end face in the X direction that becomes a magnetic pole. The end face in the X direction of the oscillating end outer magnet part 35 that becomes a magnetic pole is exposed. The magnetic pole face of the oscillating end outer magnet part 35 on the side opposite to the target 23 abuts against the covering part 35a.
The covering portion 35a acts as a south pole with respect to the longitudinal straight portion 61 when the oscillating end outer magnet portion 35 forms a magnetic circuit. In other words, the covering portion 35a covers the end face of the oscillating end outer magnet portion 35 that is away from the target 23 in the X direction, and covers the face of the oscillating end outer magnet portion 35 in the Z direction that is close to the longitudinal straight portion 61. The covering portion 35a is a magnetic material or a dielectric material. The covering portion 35a may be made of the same material as the yoke 31. The covering portion 35a can be made of SUS430 or the like.

The covering portion 35a is formed so that when a magnetic circuit is formed by the oscillating end outer magnet portion 35 and the longitudinal straight portion 61, magnetic lines of force do not enter the anode 28. As a result, the magnetism of the oscillating end outer magnet portion 35 and the covering portion 35a is also added to the magnetic circuit formed by the central magnet portion 50, the peripheral magnet portion 60, and the yoke 31.
The Z-direction surface of the covering portion 35a that is adjacent to the longitudinal straight portion 61 is formed parallel to the surface 23a of the target 23. Note that the covering portion 35a is not limited to this shape as long as it is suitable for forming a magnetic circuit with the longitudinal straight portion 61 that is closest to it.

FIG. 14 is a diagram for explaining the action of the magnetic field line tilt mechanism, and is a schematic diagram showing the direction of the magnetic field lines when the oscillation end outer magnet portion 35 is present.
During sputtering, at the oscillation end of the magnet unit 21 within the oscillation range, magnetic field lines are formed from the N-pole peripheral magnet portion 60 to the S-pole central magnet portion 50, as shown in Fig. 14. At this time, a magnetic circuit is formed including the oscillation end outer magnet portion 35 and the covering portion 35a in addition to the central magnet portion 50, the peripheral magnet portion 60, and the yoke 31.
This causes the electrons to track along the magnetic field lines.

At this time, in the magnet 25 that becomes the oscillation end, as shown in FIG. 12, the oscillation end outer magnet part 35 along the longitudinal straight part 61 tilts the magnetic field lines from the N-pole peripheral magnet part 60 so that they do not point toward the anode 28. In other words, the magnetic field lines that point from the N-pole peripheral magnet part 60 in the Y direction perpendicular to the magnetic pole plane 30 are tilted to the right in the X direction compared to when the oscillation end outer magnet part 35 is not present. In other words, by providing the oscillation end outer magnet part 35 in the magnet 25 that becomes the oscillation end, the magnetic field lines formed at one oscillation end can be pushed toward the other oscillation end.

In other words, in the magnet 25 that serves as the oscillating end, the magnetic field lines from the N-pole peripheral magnet portion 60 are inclined to the right in the Y direction perpendicular to the magnetic pole plane 30 or in the X direction so that they are not directed toward the anode 28 by the magnetic field lines from the oscillating end outer magnet portion 35.
In addition, in the magnet 25 which constitutes the oscillating end, the magnetic field lines formed by the oscillating end outer magnet section 35, the longitudinal straight section 61, and the central magnet section 50 tilt to the right in the X direction, but the magnetic field lines formed by the longitudinal straight section 62 and the central magnet section 50 can be regarded as being substantially the same as when the oscillating end outer magnet section 35 is not present.

As a result, the magnetic field line density does not decrease on the surface 23a of the target 23. In other words, in the magnet 25, which is the oscillation end, the tracking electron density is sufficiently maintained, and the plasma density is also sufficiently maintained. As a result, the non-erosion regions formed on both ends of the surface 23a of the target 23 in the X direction can be suppressed.

A magnetic circuit is also formed including the central magnet section 50, the peripheral magnet section 60, the yoke 31, the oscillating end outer magnet section 35, and the covering section 35a, and magnetic field lines are formed from the peripheral magnet section 60 of the N pole to the central magnet section 50 of the S pole. As a result, the electrons circulating around the central magnet section 50 surrounded by the peripheral magnet section 60 on the surface 23a of the target 23 do not slow down their movement speed at the longitudinal end of the magnet 25. Therefore, at the longitudinal Z-direction end of the magnet 25, the increase in electron density is suppressed. In other words, in the magnet 25 that is the oscillating end, the movement speed of the electrons that have moved in the Z direction along the central magnet section 50 does not slow down near the area where they bend in the X direction along the bridging section 63. Also, the increase in electron density is suppressed near the area where they bend in the X direction along the bridging section 63.

As a result, no decrease in density occurs at the position where the electrons bend from the X direction to the Z direction along the bridging portion 63 from the longitudinal straight portion 61, or at the position where the electrons bend from the X direction to the Z direction along the bridging portion 63 from the longitudinal straight portion 62. As a result, the formation of non-erosion regions on the surface 23a of the target 23 is suppressed in the two magnets 25 at both ends in the X direction.

In other words, by providing the oscillation end outer magnet parts 35 on the two magnets 25 at both ends (oscillation ends) in the X direction, the formation of non-erosion regions at two diagonal corners can be suppressed. This makes it possible to suppress the occurrence of voltage fluctuations in the target 23. In the target 23, the formation of non-erosion regions at the X direction ends can be suppressed. Therefore, in the target 23, it is possible to suppress the tendency for other non-erosion regions to form other than the X direction ends and the two diagonal corners.

According to the sputtering device 1 of this embodiment, by providing the magnet part 35 outside the oscillation end as a magnetic field line tilting mechanism, the magnetic field lines formed by the magnet 25 at the oscillation end can be prevented from being directed toward the anode 28. This allows the sputtering device 1 to reduce the number of electrons absorbed by the anode 28. In other words, the sputtering device 1 can make the magnetic field lines formed by the magnet 25 to be in the Y direction or tilt them to the right in FIG. 12 from the Y direction. In other words, the auxiliary magnet 27 can tilt the magnetic field lines formed by the magnet 25 toward the inside of the contour of the target 23 from the thickness direction of the target 23. This allows the sputtering device 1 to reduce the total area in which non-erosion regions are formed.

In other words, the sputtering device 1 can suppress the generation of particles by reducing the generation of non-erosion regions. In other words, the sputtering device 1 can reduce the formation of erosion-non-erosion boundary regions, which are areas where the boundary between non-erosion regions and erosion regions becomes unclear and causes particle generation.

Furthermore, the sputtering apparatus 1 can prevent the redistribution of the supplied power by suppressing the occurrence of non-erosion regions. This allows the sputtering apparatus 1 to suppress spike fluctuations in the discharge voltage and suppress partial fluctuations in the plasma generation conditions due to voltage fluctuations, etc. Therefore, the sputtering apparatus 1 can suppress particle generation and variations in the distribution of film quality characteristics such as film thickness distribution and sheet resistance value distribution.

A sixth embodiment of a sputtering apparatus according to the present invention will now be described with reference to the drawings.
15 is an enlarged cross-sectional view showing an end of the magnet unit in this embodiment. This embodiment differs from the first to fifth embodiments in terms of the magnetic field line tilt mechanism, and other configurations corresponding to the first to fifth embodiments are given the same reference numerals and will not be described.

As shown in FIG. 15, in the magnet unit 21 of this embodiment, the magnet 25 located at one of the oscillation ends of the oscillation region has an oscillation end magnetic body part 50C on the side surface in the X direction of the central magnet part 50, unlike the central magnet part 50 of the adjacent magnet 25. The oscillation end magnetic body part 50C constitutes a magnetic field line tilt mechanism. The oscillation end magnetic body part 50C can be made of the same material as the yoke 31. The oscillation end magnetic body part 50C can be made of SUS430 or the like.

The central magnet part 50 that the oscillating end magnetic part 50C comes into contact with can be formed to be the same size as the central magnet part 50 of the adjacent magnet 25. Alternatively, the central magnet part 50 that the oscillating end magnetic part 50C comes into contact with can be formed to be smaller than the central magnet part 50 of the adjacent magnet 25. In other words, it is also possible to connect the oscillating end magnetic part 50C to the oscillating end central magnet part 50A.

The magnet 25 located at one of the swing ends has a central magnet portion 50 that is disposed at approximately the same position relative to the yoke 31 as the central magnet portion 50 of the adjacent magnet 25 .
The oscillating end magnetic body part 50C is connected to the end face of the central magnet part 50 in the X direction that faces the peripheral magnet part 60. The oscillating end magnetic body part 50C covers all of the end faces of the central magnet part 50 in the X direction. The oscillating end magnetic body part 50C is formed over the entire length of the central magnet part 50 in the Z direction. The oscillating end magnetic body part 50C does not cover the end face (magnetic pole plane) 30 of the central magnet part 50.

The oscillating end magnetic material part 50C is connected to an end surface of the central magnet part 50 in the X direction that faces the longitudinal straight portion 61. Furthermore, the oscillating end magnetic material part 50C may be connected to an end surface of the central magnet part 50 in the X direction that faces the longitudinal straight portion 62. Fig. 15 shows a configuration in which the oscillating end magnetic material parts 50C are arranged on both sides of the central magnet part 50 in the X direction.
The oscillating end magnetic part 50C may be arranged on only one side in the X direction of the central magnet part 50. In this case, it is preferable that the oscillating end magnetic part 50C is arranged on the end face in the X direction of the central magnet part 50 that faces the longitudinal straight part 61.

The oscillation end magnetic material part 50C has a Z direction dimension that is approximately equal to the Z direction dimension of the central magnet part 50. The oscillation end magnetic material part 50C is formed in the Y direction from the end face (magnetic pole plane) 30 of the central magnet part 50 to the yoke 31. The oscillation end magnetic material part 50C has an X direction dimension that is approximately equal to the total length in the Z direction. The oscillation end magnetic material part 50C has an X direction dimension that is approximately equal to the total length in the Y direction. The oscillation end magnetic material part 50C has an X direction separation distance that is approximately equal to the peripheral magnet part 60 over the total length in the Z direction.
The X-direction dimension of the swing end magnetic body portion 50C is smaller than the X-direction dimension of the central magnet portion 50.

FIG. 16 is a diagram for explaining the operation of the magnetic field line tilt mechanism, and is a schematic diagram showing the direction of the magnetic field lines when the oscillation end magnetic body portion 50C is present.
During sputtering, in the magnet 25 that is the oscillation end of the oscillation range, magnetic field lines are formed from the N-pole peripheral magnet portion 60 to the S-pole central magnet portion 50, as shown in Fig. 8. At this time, a magnetic circuit is formed by the longitudinal straight portion 61, the longitudinal straight portion 62, the bridging portion 63, the central magnet portion 50, the yoke 31, and the oscillation end magnetic material portion 50C.
This causes the electrons to track along the magnetic field lines.

At this time, in the magnet 25 that is the oscillation end, as shown in FIG. 16, the oscillation end magnetic body part 50C is connected to the central magnet part 50, so that the magnetic field lines from the N-pole peripheral magnet part 60 are tilted so as not to point toward the anode 28. In other words, the magnetic field lines that point from the N-pole peripheral magnet part 60 in the Y direction perpendicular to the magnetic pole plane 30 are tilted to the right in the X direction compared to when the oscillation end magnetic body part 50C is not present. In other words, by providing the oscillation end magnetic body part 50C in the magnet 25, the magnetic field lines formed at one oscillation end can be pushed toward the other oscillation end, just as when the oscillation end central magnet part 50A is provided.

As a result, the magnetic field line density does not decrease on the surface 23a of the target 23. In other words, in the magnet 25, which is the oscillation end, the tracking electron density is sufficiently maintained, and the plasma density is also sufficiently maintained. As a result, the non-erosion regions formed on both ends of the surface 23a of the target 23 in the X direction can be suppressed.

In addition, in the magnet 25 that is the oscillation end, a magnetic circuit is formed by the longitudinal straight portion 61, the longitudinal straight portion 62, the bridging portion 63, and the central magnet portion 50, and a magnetic field line is formed from the peripheral magnet portion 60 of the N pole to the central magnet portion 50A of the oscillation end of the S pole. As a result, the electrons circulating around the central magnet portion 50 surrounded by the peripheral magnet portion 60 on the surface 23a of the target 23 do not slow down their movement speed at the longitudinal end of the magnet 25. Therefore, at the longitudinal Z-direction end of the magnet 25, the increase in electron density is suppressed. In other words, in the magnet 25 that is the oscillation end, the movement speed of the electrons that have moved in the Z direction along the central magnet portion 50 does not slow down near the bend in the X direction along the bridging portion 63. Also, the increase in electron density is suppressed near the bend in the X direction along the bridging portion 63.

As a result, in the magnet 25 that is the oscillation end, a decrease in electron density does not occur at the position where the electrons bend from the X direction to the Z direction along the bridging portion 63 from the longitudinal straight portion 61, or at the position where the electrons bend from the X direction to the Z direction along the bridging portion 63 from the longitudinal straight portion 62. As a result, the formation of non-erosion regions on the surface 23a of the target 23 can be suppressed by the two magnets 25 that are both ends in the X direction. In other words, by providing the oscillation end magnetic body portion 50C on the two magnets 25 that are both ends (oscillation ends) in the X direction, the formation of non-erosion regions at two diagonal positions can be suppressed. This makes it possible to suppress the occurrence of voltage fluctuations in the target 23. In the target 23, the formation of non-erosion regions at the X direction end can be suppressed. Therefore, in the target 23, it is possible to suppress the formation of other non-erosion regions other than the end in the X direction and the two diagonal positions.

According to the sputtering device 1 in this embodiment, by providing the oscillation end magnetic body part 50C as a magnetic field line tilt mechanism, the oscillation end magnetic body part 50C can form the magnetic field lines formed between the central magnet part 50 and the peripheral magnet part 60 for the magnet 25 at a position in contact with one of the oscillation ends so that they do not spread outside the oscillation region in the X direction. In other words, the sputtering device 1 can prevent the magnetic field lines formed by the magnet 25 at the oscillation end from heading toward the anode 28. This allows the sputtering device 1 to reduce the number of electrons absorbed by the anode 28. In other words, the sputtering device 1 can make the magnetic field lines formed by the magnet 25 in the Y direction or tilt them to the right in FIG. 8 from the Y direction. In other words, the magnetic field lines formed by the magnet 25 can be tilted toward the inside of the contour of the target 23 from the thickness direction of the target 23. This allows the sputtering device 1 to reduce the total area in which the non-erosion region is formed.

In other words, the sputtering device 1 can suppress the generation of particles by reducing the generation of non-erosion regions. In other words, the sputtering device 1 can reduce the formation of erosion-non-erosion boundary regions, which are areas where the boundary between non-erosion regions and erosion regions becomes unclear and causes particle generation.

Furthermore, the sputtering apparatus 1 can prevent the redistribution of the supplied power by suppressing the occurrence of non-erosion regions. This allows the sputtering apparatus 1 to suppress spike fluctuations in the discharge voltage and suppress partial fluctuations in the plasma generation conditions due to voltage fluctuations, etc. Therefore, the sputtering apparatus 1 can suppress particle generation and variations in the distribution of film quality characteristics such as film thickness distribution and sheet resistance value distribution.

A seventh embodiment of a sputtering apparatus according to the present invention will now be described with reference to the drawings.
17 is an enlarged cross-sectional view showing an end of the magnet unit in this embodiment. This embodiment differs from the first to sixth embodiments in terms of the magnetic field line tilt mechanism, and other configurations corresponding to the first to sixth embodiments are given the same reference numerals and will not be described.

As shown in FIG. 17, the magnet unit scanning section 29 in this embodiment has a magnet tilt scanning section 29A that tilts the magnet 25 closest to one of the oscillation ends when the magnet unit 21 is located at one of the oscillation ends of the oscillation region. The magnet tilt scanning section 29A constitutes a magnetic field line tilt mechanism.

When the magnet unit 21 is located at one of the swing ends of the swing region in the X direction, the magnet tilt scanning unit 29A tilts the magnetic pole plane 30A of the magnet 25 closest to one of the swing ends so that it is inclined from the magnetic pole plane 30 toward the other swing end. In other words, when the magnet unit scanning unit 29 moves the magnet unit 21 in the X direction, the magnet tilt scanning unit 29A can tilt only the magnet 25 closest to one of the swing ends.

When the magnet 25 closest to one of the oscillation ends moves in a direction approaching the one of the oscillation ends, the magnet tilt scanning unit 29A tilts the magnetic pole plane 30A of the magnet 25 so that it is inclined from the magnetic pole plane 30 toward the other of the oscillation ends. When the magnet 25 closest to one of the oscillation ends moves in a direction approaching the one of the oscillation ends, the magnet tilt scanning unit 29A tilts the central axis 25ZA of the magnet 25, which is normal to the yoke 31 and faces the target 23, so that it is inclined toward the other of the oscillation ends.

When the magnet 25 closest to one of the oscillation ends moves in a direction away from the one of the oscillation ends, the magnet tilt scanning unit 29A returns the tilt so that the magnetic pole plane 30A of the magnet 25 is flush with the magnetic pole plane 30. When the magnet 25 closest to one of the oscillation ends moves in a direction away from the one of the oscillation ends, the magnet tilt scanning unit 29A returns the tilt so that the central axis 25ZA of the magnet 25, which faces the target 23 in the normal direction of the yoke 31, faces the target 23 and coincides with the normal to the target 23 and the normal to the magnetic pole plane 30.

Therefore, when the magnet 25 closest to one of the oscillation ends moves from a position away from the one oscillation end in a direction further away from the one oscillation end, the magnet 25 closest to the one oscillation end moves only in the X direction in a posture that maintains the relative positional relationship with the adjacent magnet 25 by the magnet unit scanning unit 29. When the magnet 25 closest to the one oscillation end moves from a position away from the one oscillation end in a direction further away from the one oscillation end, the central axis 25ZA of the magnet 25 closest to the one oscillation end, which faces the target 23 in the normal direction of the yoke 31, maintains a parallel state with the central axis 25Z of the adjacent magnet 25, which faces the target 23 in the normal direction of the yoke 31.

The magnet tilt scanning section 29A is configured such that a tilting function is added to the magnet unit scanning section 29 which moves the magnet unit 21 in the X direction.
The magnet tilt scanning unit 29A can be equipped with, in addition to the configuration of the magnet unit scanning unit 29, a rotation axis in the Z direction that tilts the magnet 25 adjacent to one of the oscillation ends, and a tilt drive unit that tilts the magnet 25 adjacent to one of the oscillation ends around this rotation axis.
Here, the magnet tilt scanning unit 29A does not change the relative positions of the multiple magnets 25 in the magnet unit 21 in the X direction.

When the magnet unit 21 is located at the other end of the swing range in the X direction, the magnet tilt scanning unit 29A tilts the magnetic pole plane 30A of the magnet 25 closest to the other swing end so that it is tilted from the magnetic pole plane 30 toward one swing end.

FIG. 18 is a diagram for explaining the operation of the magnetic field line tilt mechanism, and is a schematic diagram showing the direction of the magnetic field lines when the magnet tilt scanning unit 29A tilts the magnet 25 closest to one of the oscillation ends.
During sputtering, in the magnet 25 closest to one of the oscillation ends, regardless of the X-direction position in the oscillation range, magnetic field lines are formed from the peripheral magnet portion 60 (N pole) to the central magnet portion 50 (S pole), as shown in Fig. 18. At this time, a magnetic circuit is formed by the central magnet portion 50, the peripheral magnet portion 60, and the yoke 31.
When the magnet 25 closest to one of the swing ends is located at one of the swing ends of the swing range, the magnet 25 itself is tilted by the magnet tilt scanning unit 29A as shown in Fig. 18. At this time, the magnetic circuit formed by the central magnet portion 50, the peripheral magnet portion 60, and the yoke 31 is maintained.
This causes the electrons to track along the magnetic field lines.

At this time, as shown in FIG. 18, the magnet 25 at one of the oscillation ends is tilted by the magnet tilt scanning unit 29A, so that the magnetic field lines formed by the magnet 25 are tilted so as not to point toward the anode 28. In other words, the central axis 25ZA from the magnet 25 toward the target 23 is tilted to the right, so that the magnetic field lines from the N-pole peripheral magnet part 60 in a direction perpendicular to the magnetic pole plane 30A are tilted to the right in the X direction. In other words, by providing the magnet tilt scanning unit 29A in the magnet unit 21, the magnetic field lines formed by the magnet 25 closest to one oscillation end can be tilted toward the other oscillation end at one oscillation end. This makes it possible to prevent the magnetic field lines formed by the magnet 25 from being attracted to the anode 28.

As a result, the magnetic field line density does not decrease on the surface 23a of the target 23. In other words, in the magnet 25, which is one of the oscillation ends, the tracking electron density is sufficiently maintained, and the plasma density is also sufficiently maintained. As a result, the non-erosion regions formed on both ends of the surface 23a of the target 23 in the X direction can be suppressed.

In addition, in the magnet 25 that is the oscillation end, a magnetic circuit is formed by the central magnet part 50 and the peripheral magnet part 60, as in the adjacent magnet 25, and a magnetic field line is formed from the peripheral magnet part 60 of the N pole to the oscillation end inclined central magnet part 50B of the S pole. As a result, the movement speed of electrons circulating around the central magnet part 50 surrounded by the peripheral magnet part 60 on the surface 23a of the target 23 does not slow down at the longitudinal end of the magnet 25. Therefore, at the Z-direction end of the magnet 25, the increase in electron density is suppressed. In other words, in the magnet 25 that is the oscillation end, the movement speed of electrons that have moved in the Z direction along the central magnet part 50 does not slow down near the area where they bend in the X direction along the bridging part 63. Also, the increase in electron density is suppressed near the area where they bend in the X direction along the bridging part 63.

As a result, no decrease in electron density occurs at the position where the electrons bend from the X direction to the Z direction along the bridging portion 63 from the longitudinal straight portion 61 or the longitudinal straight portion 62. As a result, in the two magnets 25 at both ends in the X direction, the formation of non-erosion regions on the surface 23a of the target 23 can be suppressed. In other words, by tilting the two magnets 25 at both ends (oscillation ends) in the X direction at the position of the oscillation end by the magnet tilt scanning unit 29A, the formation of non-erosion regions at two diagonal locations can be suppressed. This makes it possible to suppress the occurrence of voltage fluctuations in the target 23. In the target 23, the formation of non-erosion regions at the X direction end can be suppressed. Therefore, in the target 23, it is possible to suppress the formation of other non-erosion regions other than the end in the X direction and the two diagonal locations.

According to the sputtering device 1 of this embodiment, by providing a magnet tilt scanning unit 29A as a magnetic line tilt mechanism, the magnetic lines of force formed by the magnet 25 at the swing end can be prevented from heading toward the anode 28. This allows the sputtering device 1 to reduce the number of electrons absorbed by the anode 28. In other words, the direction of the magnetic lines of force formed by the magnet 25 can be set to the Y direction, or can be tilted to the right in FIG. 18 from the Y direction. In other words, the magnetic lines of force formed by the magnet 25 can be tilted inwardly of the contour of the target 23 from the thickness direction of the target 23. This allows the sputtering device 1 to reduce the total area in which non-erosion regions are formed.

In other words, the sputtering device 1 can suppress the generation of particles by reducing the generation of non-erosion regions. In other words, the sputtering device 1 can reduce the formation of erosion-non-erosion boundary regions, which are areas where the boundary between non-erosion regions and erosion regions becomes unclear and causes particle generation.

Furthermore, the sputtering apparatus 1 can prevent the redistribution of the supplied power by suppressing the occurrence of non-erosion regions. This allows the sputtering apparatus 1 to suppress spike fluctuations in the discharge voltage and suppress partial fluctuations in the plasma generation conditions due to voltage fluctuations, etc. Therefore, the sputtering apparatus 1 can suppress particle generation and variations in the distribution of film quality characteristics such as film thickness distribution and sheet resistance value distribution.

Hereinafter, an eighth embodiment of a sputtering apparatus according to the present invention will be described with reference to the drawings.
19 is an enlarged cross-sectional view showing an end of the magnet unit in this embodiment. This embodiment differs from the first to seventh embodiments in terms of the magnetic field line tilt mechanism, and other configurations corresponding to the first to seventh embodiments are given the same reference numerals and their description will be omitted.

As shown in FIG. 17, the magnet unit scanning section 29 in this embodiment has a magnet proximity scanning section 29B that, when the magnet unit 21 is located at one of the oscillation ends of the oscillation region, moves the magnet 25 closest to the one oscillation end closer to the target. The magnet proximity scanning section 29B constitutes a magnetic field line tilt mechanism.

When the magnet unit 21 is located at one of the swing ends of the swing region in the X direction, the magnet proximity scanning unit 29B moves the magnet 25 closest to one of the swing ends so that the magnetic pole plane 30B moves closer to the target 23 from the magnetic pole plane 30 of the adjacent magnet 25. At this time, the magnet proximity scanning unit 29B does not tilt the magnetic pole plane 30B of the magnet 25 closest to one of the swing ends. In other words, when the magnet unit scanning unit 29 moves the magnet unit 21 in the X direction, the magnet proximity scanning unit 29B can move only the magnet 25 closest to one of the swing ends in the Y direction.

When the magnet 25 closest to one of the swing ends moves in the X direction toward the swing end, the magnet proximity scanning unit 29B moves the magnet 25 closer in the Z direction toward the target 23 while maintaining the magnetic pole plane 30B of the magnet 25 parallel to the magnetic pole plane 30. When the magnet 25 closest to one of the swing ends moves in the X direction toward the swing end, the magnet proximity scanning unit 29B moves the magnet 25 closer in the Z direction toward the target 23 while maintaining the central axis 25ZB of the magnet 25 normal to the yoke 31 toward the target 23 parallel to the central axis 25Z of the adjacent magnet 25.

When the magnet 25 closest to one of the swing ends moves in the X direction away from the swing end, the magnet proximity scanning unit 29B moves the magnet 25 back to its original position by moving it away from the target 23 in the Z direction while maintaining the magnetic pole plane 30B of the magnet 25 parallel to the magnetic pole plane 30. When the magnet 25 closest to one of the swing ends moves in the X direction away from the swing end, the magnet proximity scanning unit 29B moves the magnet 25 back to its original position by moving it away from the target 23 in the Z direction while maintaining the central axis 25ZA of the magnet 25 normal to the yoke 31 toward the target 23 parallel to the central axis 25Z of the adjacent magnet 25.

Therefore, when the magnet 25 closest to one of the oscillation ends moves from a position away from the one of the oscillation ends in a direction further away from the one of the oscillation ends, the magnet 25 closest to the one of the oscillation ends moves only in the X direction in a posture that maintains the relative positional relationship with the adjacent magnet 25 by the magnet unit scanning unit 29. When the magnet 25 closest to the one of the oscillation ends moves from a position away from the one of the oscillation ends in a direction further away from the one of the oscillation ends, the central axis 25ZB of the magnet 25 closest to the one of the oscillation ends maintains a state parallel to the central axis 25Z of the adjacent magnet 25.

The magnet proximity scanning section 29B is configured such that a function of moving the magnet unit 21 in the Y direction is added to the magnet unit scanning section 29 which moves the magnet unit 21 in the X direction.
In addition to the configuration of the magnet unit scanning unit 29, the magnet proximity scanning unit 29B can have, as a configuration for moving the magnet 25 closest to one of the oscillation ends in the Y direction, for example, a rail extending along the Y direction, rollers attached to each of the two ends in the ZX direction of the magnet 25 closest to one of the oscillation ends, and a plurality of motors for rotating each of the rollers, etc. The magnet proximity scanning unit 29B may be composed of an LM guide or the like having a rail extending along the Y direction.
Here, the magnet proximity scanning unit 29B does not change the relative positions of the multiple magnets 25 in the magnet unit 21 in the X direction.

When the magnet unit 21 is located at the other end of the swing range in the X direction, the magnet proximity scanning unit 29B moves the magnet 25 closer to and farther away from the target 23 in the Z direction while maintaining the magnetic pole plane 30B of the magnet 25 closest to the other swing end in a parallel state.

Figure 20 is a diagram for explaining the operation of the magnetic line tilt mechanism, and is a schematic diagram showing the direction of the magnetic line of force when the magnet proximity scanning unit 29B brings the magnet 25 closest to one of the oscillation ends close to the target 23.
During sputtering, in the magnet 25 closest to one of the oscillation ends, regardless of the X-direction position in the oscillation range, magnetic field lines are formed from the peripheral magnet portion 60 (N pole) to the central magnet portion 50 (S pole), as shown in Fig. 20. At this time, a magnetic circuit is formed by the central magnet portion 50, the peripheral magnet portion 60, and the yoke 31.
When the magnet 25 closest to one of the swing ends is located at one of the swing ends of the swing range, the magnet 25 itself moves in the Y direction by the magnet proximity scanning unit 29B as shown in Fig. 20. At this time, the magnetic circuit formed by the central magnet portion 50, the peripheral magnet portion 60, and the yoke 31 is maintained.
This causes the electrons to track along the magnetic field lines.

At this time, as shown in FIG. 20, in the magnet 25 at one of the oscillation ends, the magnet 25 is moved in the Y direction by the magnet proximity scanning unit 29B, so that the magnetic field lines formed by the magnet 25 are shifted so as not to point toward the anode 28. In other words, by moving the magnetic pole plane 30B of the magnet 25 toward the target 23, the magnetic field lines that point from the N-pole peripheral magnet part 60 in a direction intersecting the magnetic pole plane 30B can be made less inclined in the X direction. In other words, by providing the magnet proximity scanning unit 29B in the magnet unit 21, it can be considered that, at one oscillation end, the magnetic field lines formed by the magnet 25 closest to one oscillation end are inclined toward the other oscillation end. It is possible to prevent the magnetic field lines formed by the magnet 25 from being attracted to the anode 28.

As a result, the magnetic field line density does not decrease on the surface 23a of the target 23. In other words, in the magnet 25, which is one of the oscillation ends, the tracking electron density is sufficiently maintained, and the plasma density is also sufficiently maintained. As a result, the non-erosion regions formed on both ends of the surface 23a of the target 23 in the X direction can be suppressed.

In addition, in the magnet 25 that is the oscillation end, a magnetic circuit is formed by the central magnet part 50 and the peripheral magnet part 60, as in the adjacent magnet 25, and a magnetic field line is formed from the peripheral magnet part 60 of the N pole to the oscillation end inclined central magnet part 50B of the S pole. As a result, the movement speed of electrons circulating around the central magnet part 50 surrounded by the peripheral magnet part 60 on the surface 23a of the target 23 does not slow down at the longitudinal end of the magnet 25. Therefore, at the Z-direction end of the magnet 25, the increase in electron density is suppressed. In other words, in the magnet 25 that is the oscillation end, the movement speed of electrons that have moved in the Z direction along the central magnet part 50 does not slow down near the area where they bend in the X direction along the bridging part 63. Also, the increase in electron density is suppressed near the area where they bend in the X direction along the bridging part 63.

As a result, at the position where the electrons bend from the X direction to the Z direction along the bridge portion 63 from the longitudinal straight portion 61 or the longitudinal straight portion 62, no decrease in electron density occurs. As a result, in the two magnets 25 at both ends in the X direction, the formation of non-erosion regions on the surface 23a of the target 23 can be suppressed. In other words, by bringing the two magnets 25 at both ends (oscillation ends) in the X direction close to the target 23 at the oscillation end position by the magnet proximity scanning unit 29B, the formation of non-erosion regions at two diagonal positions can be suppressed. This makes it possible to suppress the occurrence of voltage fluctuations in the target 23. In the target 23, the formation of non-erosion regions at the X direction end can be suppressed. Therefore, in the target 23, it is possible to suppress the formation of other non-erosion regions other than the X direction end and the two diagonal positions.

According to the sputtering device 1 of this embodiment, by providing a magnet proximity scanning unit 29B as a magnetic line tilt mechanism, the magnetic lines of force formed by the magnet 25 at the swing end can be prevented from heading toward the anode 28. This allows the sputtering device 1 to reduce the number of electrons absorbed by the anode 28. In other words, the direction of the magnetic lines of force formed by the magnet 25 can be set to the Y direction, or can be tilted to the right in FIG. 20 from the Y direction. In other words, the magnetic lines of force formed by the magnet 25 can be tilted inwardly of the contour of the target 23 from the thickness direction of the target 23. This allows the sputtering device 1 to reduce the total area in which non-erosion regions are formed.

In other words, the sputtering device 1 can suppress the generation of particles by reducing the generation of non-erosion regions. In other words, the sputtering device 1 can reduce the formation of erosion-non-erosion boundary regions, which are areas where the boundary between non-erosion regions and erosion regions becomes unclear and causes particle generation.

Furthermore, the sputtering apparatus 1 can prevent the redistribution of the supplied power by suppressing the occurrence of non-erosion regions. This allows the sputtering apparatus 1 to suppress spike fluctuations in the discharge voltage and suppress partial fluctuations in the plasma generation conditions due to voltage fluctuations, etc. Therefore, the sputtering apparatus 1 can suppress particle generation and variations in the distribution of film quality characteristics such as film thickness distribution and sheet resistance value distribution.

1... sputtering device 4... film formation chamber
10... cathode device 11... glass substrate (film-forming substrate, transparent substrate)
22: cathode unit 23: target 24: backing plate 25: magnet (magnetic circuit)
26...Control unit 27...Auxiliary magnet 28...Anode 29...Magnet unit scanning unit 29A...Magnet inclination scanning unit 29B...Magnet proximity scanning unit 30, 30A...Magnetic pole plane 31...Yoke 35...Oscillation end outer magnet section 35a...Covering section 41...Front space 42...Rear space 50...Central magnet section 50A...Oscillation end central magnet section 50B...Oscillation end inclined central magnet section 50C...Oscillation end magnetic body section 61, 62...Longitudinal straight section 60...Peripheral magnet section 60A...Oscillation end longitudinal straight section 63...Bridge section

Claims (9)

A cathode unit that emits sputtered particles toward a deposition region of a deposition substrate,
a target on which an erosion region is formed;
a magnet unit disposed on the opposite side of the target from the deposition substrate and configured to form the erosion region in the target;
a magnet unit scanning unit capable of reciprocating the magnet unit and the deposition substrate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface;
having
The magnet unit has a magnet whose longitudinal direction extends along the target surface in a swing width direction that intersects with the swing direction,
a magnetic field line tilting mechanism that tilts the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
The magnetic field line tilt mechanism pushes the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
The magnet is
A central magnet portion having magnetic poles arranged linearly toward the target;
a peripheral magnet section having a magnetic pole facing the target and different in polarity from the central magnet section and surrounding the central magnet section along the target surface;
Equipped with
The magnet unit has a plurality of magnets arranged in the swing direction,
A sputtering apparatus characterized in that the magnetic field line tilt mechanism has a central magnet portion at one of the magnets located at one of the magnet oscillation ends that is smaller than the central magnet portion of an adjacent magnet. A cathode unit that emits sputtered particles toward a deposition region of a deposition substrate,
a target on which an erosion region is formed;
a magnet unit disposed on the opposite side of the target from the deposition substrate and configured to form the erosion region in the target;
a magnet unit scanning unit capable of reciprocating the magnet unit and the deposition substrate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface;
having
The magnet unit has a magnet whose longitudinal direction extends along the target surface in a swing width direction that intersects with the swing direction,
a magnetic field line tilting mechanism that tilts the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
The magnetic field line tilt mechanism pushes the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
The magnet is
A central magnet portion having magnetic poles arranged linearly toward the target;
a peripheral magnet section having a magnetic pole facing the target and having a polarity different from that of the central magnet section, longitudinal straight sections extending parallel to both sides of the central magnet section at equal intervals and bridging sections respectively bridging the ends of both longitudinal straight sections, and surrounding the periphery of the central magnet section along the target surface;
Equipped with
The magnet unit has a plurality of magnets arranged in the swing direction,
A sputtering apparatus characterized in that the magnetic field line tilt mechanism has a longitudinal straight portion of the magnet located at one of the oscillation ends that is formed larger than the longitudinal straight portion of an adjacent magnet. A cathode unit that emits sputtered particles toward a deposition region of a deposition substrate,
a target on which an erosion region is formed;
a magnet unit disposed on the opposite side of the target from the deposition substrate and configured to form the erosion region in the target;
a magnet unit scanning unit capable of reciprocating the magnet unit and the deposition substrate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface;
having
The magnet unit has a magnet whose longitudinal direction extends along the target surface in a swing width direction that intersects with the swing direction,
a magnetic field line tilting mechanism that tilts the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
The magnetic field line tilt mechanism pushes the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
The magnet is
A central magnet portion having magnetic poles arranged linearly toward the target;
a peripheral magnet section having a magnetic pole facing the target and different in polarity from the central magnet section and surrounding the central magnet section along the target surface;
Equipped with
The magnet unit has a plurality of magnets arranged in the swing direction,
The magnetic field line tilt mechanism has a swing end inclined central magnet portion inclined toward the other swing end relative to the central magnet portion of the adjacent magnet in the magnet located at one swing end.
A sputtering apparatus comprising: A cathode unit that emits sputtered particles toward a deposition region of a deposition substrate,
a target on which a non-erosion region and an erosion region are formed;
a magnet unit disposed on the opposite side of the target from the deposition substrate to form the non-erosion region and the erosion region in the target;
a magnet unit scanning unit capable of reciprocating the magnet unit and the deposition substrate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface;
having
The magnet unit has a magnet whose longitudinal direction extends along the target surface in a swing width direction that intersects with the swing direction,
a magnetic field line tilting mechanism that tilts the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
The magnetic field line tilt mechanism suppresses the formation of an erosion-non-erosion boundary region in which the boundary between the non-erosion region and the erosion region is unclear, and
the magnetic field line tilt mechanism pushes the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
The magnet is
A central magnet portion having magnetic poles arranged linearly toward the target;
a peripheral magnet section having a magnetic pole facing the target and different in polarity from the central magnet section and surrounding the central magnet section along the target surface;
Equipped with
The magnet unit has a plurality of magnets arranged in the swing direction,
the magnetic field line tilt mechanism has an auxiliary magnet disposed adjacent to the peripheral edge magnet portion at a position outside the one of the swing ends of the swing region,
A sputtering apparatus comprising: A cathode unit that emits sputtered particles toward a deposition region of a deposition substrate,
a target on which a non-erosion region and an erosion region are formed;
a magnet unit disposed on the opposite side of the target from the deposition substrate to form the non-erosion region and the erosion region in the target;
a magnet unit scanning unit capable of reciprocating the magnet unit and the deposition substrate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface;
having
The magnet unit has a magnet whose longitudinal direction extends along the target surface in a swing width direction that intersects with the swing direction,
a magnetic field line tilting mechanism that tilts the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
The magnetic field line tilt mechanism suppresses the formation of an erosion-non-erosion boundary region in which the boundary between the non-erosion region and the erosion region is unclear, and
the magnetic field line tilt mechanism pushes the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
an anode that is paired with the cathode unit and positioned around the target;
the magnetic field line tilt mechanism has an outer magnet part for an oscillation end located on the back surface of the anode and located outside the oscillation region relative to the one oscillation end;
A sputtering apparatus comprising: A cathode unit that emits sputtered particles toward a deposition region of a deposition substrate,
a target on which a non-erosion region and an erosion region are formed;
a magnet unit disposed on the opposite side of the target from the deposition substrate to form the non-erosion region and the erosion region in the target;
a magnet unit scanning unit capable of reciprocating the magnet unit and the deposition substrate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface;
having
The magnet unit has a magnet whose longitudinal direction extends along the target surface in a swing width direction that intersects with the swing direction,
a magnetic field line tilting mechanism that tilts the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
The magnetic field line tilt mechanism suppresses the formation of an erosion-non-erosion boundary region in which the boundary between the non-erosion region and the erosion region is unclear, and
the magnetic field line tilt mechanism changes the magnetic field lines formed by the magnet at the one oscillation end so that the width of the lines of magnetic field extending in the oscillation direction decreases.
A sputtering apparatus comprising: A cathode unit that emits sputtered particles toward a deposition region of a deposition substrate,
a target on which an erosion region is formed;
a magnet unit disposed on the opposite side of the target from the deposition substrate and configured to form the erosion region in the target;
a magnet unit scanning unit capable of reciprocating the magnet unit and the deposition substrate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface;
having
The magnet unit has a magnet whose longitudinal direction extends along the target surface in a swing width direction that intersects with the swing direction,
a magnetic field line tilting mechanism that tilts the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
the magnetic field line tilt mechanism changes the magnetic field lines formed by the magnet at the one oscillation end so that the width of the lines of magnetic field extending in the oscillation direction decreases,
The magnet is
A central magnet portion having magnetic poles arranged linearly toward the target;
a peripheral magnet section having a magnetic pole facing the target and different in polarity from the central magnet section and surrounding the central magnet section along the target surface;
Equipped with
The magnet unit has a plurality of magnets arranged in the swing direction,
the magnetic field line tilt mechanism has an oscillation end magnetic body portion disposed adjacent to the central magnet portion in the oscillation direction in the magnet located at one of the oscillation ends,
A sputtering apparatus comprising: A cathode unit that emits sputtered particles toward a deposition region of a deposition substrate,
a target on which a non-erosion region and an erosion region are formed;
a magnet unit disposed on the opposite side of the target from the deposition substrate to form the non-erosion region and the erosion region in the target;
a magnet unit scanning unit capable of reciprocating the magnet unit and the deposition substrate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface;
having
The magnet unit has a magnet whose longitudinal direction extends along the target surface in a swing width direction that intersects with the swing direction,
a magnetic field line tilting mechanism that tilts the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
The magnetic field line tilt mechanism suppresses the formation of an erosion-non-erosion boundary region in which the boundary between the non-erosion region and the erosion region is unclear, and
the magnetic field line tilt mechanism has a magnet tilt scanning unit that tilts the magnet located at one of the oscillation ends so that the magnetic field lines formed by the magnet at the one of the oscillation ends are tilted toward the other oscillation end,
A sputtering apparatus comprising: A cathode unit that emits sputtered particles toward a deposition region of a deposition substrate,
a target on which an erosion region is formed;
a magnet unit disposed on the opposite side of the target from the deposition substrate and configured to form the erosion region in the target;
a magnet unit scanning unit capable of reciprocating the magnet unit and the deposition substrate in a swing region defined between one swing end and the other swing end in a swing direction (scanning direction) along the target surface;
having
The magnet unit has a magnet whose longitudinal direction extends along the target surface in a swing width direction that intersects with the swing direction,
a magnetic field line tilting mechanism that tilts the magnetic field lines formed by the magnet at the one oscillation end toward the other oscillation end,
an anode that is paired with the cathode unit and positioned around the target;
the magnetic field line tilt mechanism has a magnet proximity scanning unit that moves the magnet located at one of the swing ends closer to the target so as to reduce magnetic field lines formed in the magnet and reaching the anode.
A sputtering apparatus comprising: