JP7708614B2 - Strength evaluation jig - Google Patents
Strength evaluation jigInfo
- Publication number
- JP7708614B2 JP7708614B2 JP2021138516A JP2021138516A JP7708614B2 JP 7708614 B2 JP7708614 B2 JP 7708614B2 JP 2021138516 A JP2021138516 A JP 2021138516A JP 2021138516 A JP2021138516 A JP 2021138516A JP 7708614 B2 JP7708614 B2 JP 7708614B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- support
- pair
- depth adjustment
- recess
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Investigating Strength Of Materials By Application Of Mechanical Stress (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
本発明は、半導体チップの抗折強度を評価する際に使用できる強度評価用治具に関する。 The present invention relates to a strength evaluation tool that can be used to evaluate the flexural strength of semiconductor chips.
半導体ウェーハの表面には複数の分割予定ラインが格子状に並ぶように設定され、該分割予定ラインによって区画される各領域のそれぞれにIC(Integrated Circuit)、LSI(Large Scale Integration)等のデバイスが形成される。そして、分割予定ラインに沿って半導体ウェーハが分割されると、デバイスを有する個々の半導体チップが形成される。 A number of planned division lines are set on the surface of the semiconductor wafer in a grid pattern, and devices such as ICs (Integrated Circuits) and LSIs (Large Scale Integration) are formed in each of the areas defined by the planned division lines. Then, when the semiconductor wafer is divided along the planned division lines, individual semiconductor chips each having a device are formed.
半導体チップに大きな衝撃が加わると、クラックや割れ等の損傷が生じてデバイスの機能が失われる場合がある。そのため、所定の水準の抗折強度を有する半導体チップを開発するべく、試作された半導体チップの抗折強度が測定される。抗折強度を評価する手法には、例えば、SEMI(Semiconductor Equipment and Materials International)規格G86-0303で規定される3点曲げ(3-Point Bending)法がある。 When a semiconductor chip is subjected to a large impact, it may cause damage such as cracks or breaks, causing the device to lose its functionality. Therefore, in order to develop a semiconductor chip with a specified level of flexural strength, the flexural strength of prototype semiconductor chips is measured. One method for evaluating flexural strength is, for example, the 3-point bending method defined in SEMI (Semiconductor Equipment and Materials International) standard G86-0303.
例えば、半導体チップの抗折強度を3点曲げ法により測定する場合、2つの円柱状の支持体を倒して互いに平行に並べ、該支持体の側面上に測定対象となる半導体チップを該支持体に対して固定せずに載せる。そして、円柱状の圧子を2つの支持体の間の半導体チップの上方にかつ2つの支持体に平行に配置する。そして、圧子により半導体チップを上方から押圧して破壊し、その時に半導体チップに加えられていた荷重を強度として測定する(特許文献1参照)。 For example, when measuring the flexural strength of a semiconductor chip using the three-point bending method, two cylindrical supports are inverted and arranged parallel to each other, and the semiconductor chip to be measured is placed on the side of the supports without being fixed to the supports. A cylindrical indenter is then placed above the semiconductor chip between the two supports and parallel to the two supports. The semiconductor chip is then pressed from above with the indenter until it breaks, and the load applied to the semiconductor chip at that time is measured as its strength (see Patent Document 1).
3点曲げ法による半導体チップの抗折強度の測定を正しい手順で実施して抗折強度を精密に測定するには、大掛かりで高価な測定器を準備しなければならない。しかしながら、例えば、半導体チップの製造現場において様々な種別の半導体チップを様々な条件で次々に試作し、それらの抗折強度を簡易的に比較したい場合、製造された半導体チップを測定器に運び精密に測定を実施するのは手間であり多くの時間を消費する。 To measure the flexural strength of semiconductor chips using the three-point bending method in the correct procedure and measure the flexural strength precisely, a large and expensive measuring device must be prepared. However, for example, if various types of semiconductor chips are prototyped one after another under various conditions at a semiconductor chip manufacturing site and it is desired to easily compare their flexural strengths, it is time-consuming and laborious to transport the manufactured semiconductor chips to the measuring device and perform precise measurements.
特に、近年、半導体チップが搭載される電子機器の小型化の傾向が著しく、半導体チップにも小型化が求められている。そして、1cm角~2cm角やそれ以下のサイズの半導体チップも製造されている。しかしながら、従来の3点曲げ法の抗折強度測定器ではこのような小型の半導体チップの抗折強度を測定できるようには構成されていない場合もあり、小型の半導体チップの抗折強度を測定するのは容易ではない。 In particular, in recent years, there has been a remarkable trend toward miniaturization of electronic devices incorporating semiconductor chips, and miniaturization of semiconductor chips is also being demanded. Semiconductor chips measuring 1 cm square to 2 cm square or even smaller are also being manufactured. However, conventional flexural strength measuring devices using the three-point bending method are not always configured to measure the flexural strength of such small semiconductor chips, and it is not easy to measure the flexural strength of small semiconductor chips.
本発明はかかる問題に鑑みてなされたものであり、その目的とするところは、半導体チップの抗折強度を容易に評価できる強度評価用治具を提供することである。 The present invention was made in consideration of these problems, and its purpose is to provide a strength evaluation tool that can easily evaluate the flexural strength of semiconductor chips.
本発明の一態様によれば、半導体チップの強度評価用治具であって、該半導体チップを支持する支持体と、該支持体に支持された該半導体チップを押圧する押圧体と、板状の深さ調整体と、を備え、該支持体は、該半導体チップをそれぞれ支持する一対の支持部と、一対の該支持部の間の凹部と、一対の該支持部のそれぞれ外側に向けて傾斜した一対の傾斜部と、を有し、該深さ調整体は、該支持体の一対の該支持部のそれぞれに挿入される一対の開口を有し、該深さ調整体の一対の該開口のそれぞれの外端が該支持体の一対の該傾斜部のそれぞれにかかるまで一対の該開口のそれぞれに該支持体の一対の該支持部のそれぞれを挿入したとき、該深さ調整体の一対の該開口の間の橋部が該支持体の該凹部に所定の深さまで進入し、該橋部の上端が該凹部の深さを規定し、一対の該支持部に支持された該半導体チップを該押圧体によって押圧し湾曲する該半導体チップが該支持体の該凹部に進入する際の該半導体チップの進入深さと、該凹部に進入した該半導体チップの割れの有無と、によって該半導体チップの強度を評価できる強度評価用治具が提供される。 According to one aspect of the present invention, a strength evaluation jig for a semiconductor chip includes a support body for supporting the semiconductor chip, a pressing body for pressing the semiconductor chip supported by the support body, and a plate-shaped depth adjustment body, the support body having a pair of support parts for supporting the semiconductor chips, a recess between the pair of support parts, and a pair of inclined parts inclined outwardly of each of the pair of support parts , the depth adjustment body having a pair of openings inserted into each of the pair of support parts of the support body, and outer ends of each of the pair of openings of the depth adjustment body are in contact with the pair of support parts of the support body. When each of the pair of support parts of the support body is inserted into each of the pair of openings until they overlap the respective inclined portions, the bridge part between the pair of openings of the depth adjustment body penetrates to a predetermined depth into the recess of the support body, and the upper end of the bridge part determines the depth of the recess, and a strength evaluation jig is provided that can evaluate the strength of the semiconductor chip based on the penetration depth of the semiconductor chip when the semiconductor chip supported by the pair of support parts is pressed by the pressing body and bent into the recess of the support body, and the presence or absence of cracks in the semiconductor chip that has penetrated into the recess.
本発明の一態様に係る半導体チップの強度評価用治具は、半導体チップを支持する支持体と、支持体に支持された半導体チップを押圧する押圧体と、を備える。支持体の一対の支持部に半導体チップを支持させ凹部の上方で半導体チップを渡し、これを押圧体によって上方から押圧すると、半導体チップが湾曲しながら凹部に進入する。半導体チップの湾曲の程度が抗折強度の限界を超えるまでは半導体チップに割れが生じず、湾曲の程度が抗折強度の限界を超えたときに半導体チップに割れが生じる。 A jig for evaluating the strength of a semiconductor chip according to one aspect of the present invention includes a support body that supports a semiconductor chip, and a pressing body that presses the semiconductor chip supported by the support body. When the semiconductor chip is supported on a pair of support parts of the support body and placed above a recess, and pressed from above by the pressing body, the semiconductor chip enters the recess while bending. The semiconductor chip does not crack until the degree of bending of the semiconductor chip exceeds the limit of its flexural strength, and when the degree of bending exceeds the limit of its flexural strength, the semiconductor chip cracks.
半導体チップの湾曲の程度は、支持体の凹部に進入した半導体チップの進入深さにより決まる。そこで、押圧体で半導体チップを押圧して湾曲させ凹部に進入させたときの進入深さと、凹部に進入した半導体チップの割れの有無と、によって半導体チップの強度を評価できる。 The degree of bending of the semiconductor chip is determined by the depth to which the semiconductor chip penetrates the recess in the support. Therefore, the strength of the semiconductor chip can be evaluated based on the depth to which the semiconductor chip penetrates the recess when it is pressed and bent by a pressing body, and the presence or absence of cracks in the semiconductor chip that has penetrated the recess.
例えば、2つの半導体チップの抗折強度の大小を比較する際には、それぞれの半導体チップを押圧体で押圧して湾曲させ所定の進入深さまで凹部に進入させる。このとき、一方の半導体チップにのみ割れが生じた場合、割れの生じた半導体チップの抗折強度が比較的小さいことが理解される。このように、本発明の一態様に係る半導体チップの強度評価用治具を使用すると、半導体チップの抗折強度を簡易的に評価できる。 For example, when comparing the flexural strength of two semiconductor chips, each semiconductor chip is pressed with a pressing body to bend it and penetrate it into a recess to a predetermined penetration depth. If a crack occurs in only one of the semiconductor chips, it is understood that the flexural strength of the semiconductor chip in which the crack occurs is relatively low. In this way, by using a semiconductor chip strength evaluation jig according to one aspect of the present invention, the flexural strength of the semiconductor chip can be easily evaluated.
したがって、本発明によると、半導体チップの抗折強度を簡易的に評価できる強度評価用治具が提供される。 Therefore, the present invention provides a strength evaluation tool that can easily evaluate the flexural strength of a semiconductor chip.
以下、添付図面を参照しながら、本発明の実施形態について詳細に説明する。まず、本実施形態に係る強度評価用治具で抗折強度が評価される半導体チップについて説明する。図1には、半導体チップ1を模式的に示す斜視図が含まれている。 Hereinafter, an embodiment of the present invention will be described in detail with reference to the attached drawings. First, a semiconductor chip whose flexural strength is evaluated using a strength evaluation jig according to this embodiment will be described. FIG. 1 includes a perspective view showing a schematic diagram of a semiconductor chip 1.
半導体チップ1は、例えば、Si(シリコン)、SiC(シリコンカーバイド)、GaN(窒化ガリウム)、GaAs(ヒ化ガリウム)、若しくは、その他の半導体等の材料からなる円板状の半導体ウェーハから切り出されたチップである。半導体ウェーハの表面は、互いに交差する複数のストリート(加工予定ライン)で区画される。また、ウェーハの表面のストリートで区画された各領域には、ICやLSI等のデバイスが形成される。 The semiconductor chip 1 is a chip cut from a disk-shaped semiconductor wafer made of a material such as Si (silicon), SiC (silicon carbide), GaN (gallium nitride), GaAs (gallium arsenide), or other semiconductor. The surface of the semiconductor wafer is partitioned by a number of streets (lines to be processed) that intersect with each other. Furthermore, devices such as ICs and LSIs are formed in each area partitioned by the streets on the surface of the wafer.
そして、半導体ウェーハをストリートに沿って分割すると、それぞれデバイスを備えた個々の半導体チップ1が形成される。近年、半導体チップ1が搭載される電子機器の小型化の傾向が著しく、これに対応するために1cm~2cm角かそれ以下のサイズの半導体チップ1が製造されるようになっている。 Then, when the semiconductor wafer is divided along the streets, individual semiconductor chips 1 each equipped with a device are formed. In recent years, there has been a remarkable trend toward miniaturization of electronic devices in which semiconductor chips 1 are mounted, and in response to this, semiconductor chips 1 measuring 1 cm to 2 cm square or smaller are being manufactured.
半導体チップ1の開発現場では様々な条件で半導体チップ1が試作され、一つの評価項目として半導体チップ1の抗折強度が測定される。従来、半導体チップ1等の試料の抗折強度の測定は、3点曲げ法により実施されていたが、小型の半導体チップ1の抗折強度の測定は容易ではなく、また、次々に試作される半導体チップ1を測定器まで搬送して適切な手順で抗折強度を測定するのは手間である。また、複数の半導体チップ1の抗折強度の大小関係を比較したい場合、抗折強度の精密な測定値は不要である。 At the development site of semiconductor chip 1, semiconductor chip 1 is prototyped under various conditions, and the flexural strength of semiconductor chip 1 is measured as one of the evaluation items. Conventionally, the flexural strength of samples such as semiconductor chip 1 has been measured by the three-point bending method, but it is not easy to measure the flexural strength of small semiconductor chip 1, and it is time-consuming to transport the semiconductor chips 1 prototyped one after another to a measuring device and measure their flexural strength using the appropriate procedure. Furthermore, when it is desired to compare the relative magnitudes of the flexural strength of multiple semiconductor chips 1, precise measurements of the flexural strength are not necessary.
そこで、半導体チップ1の抗折強度を簡易的に評価できる本実施形態に係る強度評価用治具が使用されるとよい。図1には、本実施形態に係る強度評価用治具2を模式的に示す斜視図が含まれている。以下、強度評価用治具2の構成及び使用方法について説明する。 In this regard, it is advisable to use the strength evaluation jig according to this embodiment, which can easily evaluate the flexural strength of the semiconductor chip 1. Figure 1 includes a perspective view showing a schematic diagram of the strength evaluation jig 2 according to this embodiment. The configuration and method of use of the strength evaluation jig 2 will be described below.
本実施形態に係る強度評価用治具2は、半導体チップ1を支持する支持体12と、支持体12に支持された半導体チップ1を押圧する押圧体4と、支持体12の後述の凹部18の深さを調整する深さ調整体24と、の3つの分離した部材を備える。支持体12、押圧体4、及び深さ調整体24は、例えば、ステンレス鋼や樹脂等の材料により形成される。ただし、各部材の材料はこれに限定されない。次に、それぞれの部材の構造及び機能について説明する。 The strength evaluation jig 2 according to this embodiment comprises three separate members: a support 12 that supports the semiconductor chip 1, a pressing body 4 that presses the semiconductor chip 1 supported by the support 12, and a depth adjustment body 24 that adjusts the depth of a recess 18 (described below) in the support 12. The support 12, pressing body 4, and depth adjustment body 24 are formed from materials such as stainless steel or resin, for example. However, the materials of each member are not limited to these. Next, the structure and function of each member will be described.
押圧体4は、略三角柱状の部材であり、三角柱の一つの側面に相当する上面6が水平面となる状態で使用される。このとき、三角柱の他の側面に相当する2つの外面8a,8bは、上面6と垂直に交差する鉛直面に対して互いに対称形となるように同じ角度で逆向きに傾斜する。そして、押圧体4の2つの外面8a,8bを接続する下端の辺は丸められており、線状の押圧部10となる。半導体チップ1の上面に押圧部10を接触させた状態で押圧体4を下降させることにより、押圧体4で半導体チップ1を押圧できる。 The pressing body 4 is a roughly triangular prism-shaped member, and is used with the top surface 6, which corresponds to one side of the triangular prism, in a horizontal plane. At this time, the two outer surfaces 8a, 8b, which correspond to the other sides of the triangular prism, are inclined in opposite directions at the same angle so as to be symmetrical with respect to a vertical plane that perpendicularly intersects with the top surface 6. The lower edge connecting the two outer surfaces 8a, 8b of the pressing body 4 is rounded to form a linear pressing portion 10. The pressing body 4 can be lowered with the pressing portion 10 in contact with the top surface of the semiconductor chip 1, thereby pressing the semiconductor chip 1.
支持体12は、半導体チップ1をそれぞれ支持する一対の直線状の支持部16a,16bを上端に備える本体14を有し、本体14の一対の支持部16a,16bの間には凹部18が形成されている。本体14の底面22は、平面である。水平なテーブル面に底面22を下方に向けて該テーブル面上に支持体12を置いたとき、凹部18を挟んだ一対の支持部16a,16bは同じ高さとなり、互いに平行となる。 The support 12 has a main body 14 with a pair of linear support parts 16a, 16b at the upper end, each of which supports a semiconductor chip 1, and a recess 18 is formed between the pair of support parts 16a, 16b of the main body 14. The bottom surface 22 of the main body 14 is flat. When the support 12 is placed on a horizontal table surface with the bottom surface 22 facing downward, the pair of support parts 16a, 16b sandwiching the recess 18 are at the same height and are parallel to each other.
本体14の上面は、一対の支持部16a,16bからそれぞれ外側に向けて下方に傾斜している。すなわち、支持体12は、一対の支持部16a,16bのそれぞれ外側に向けて下方に傾斜した一対の傾斜部20a,20bを有する。一対の傾斜部20a,20bは、鉛直面に対して互いに対称形となるように同じ角度で逆向きに傾斜する。 The upper surface of the main body 14 is inclined downward from the pair of support parts 16a, 16b toward the outside. In other words, the support body 12 has a pair of inclined parts 20a, 20b that are inclined downward toward the outside of the pair of support parts 16a, 16b. The pair of inclined parts 20a, 20b are inclined in opposite directions at the same angle so that they are symmetrical to each other with respect to the vertical plane.
板状の深さ調整体24は、橋部28を挟んで配置された一対の開口26a,26bを有する。一対の開口26a,26bは上下に貫通しており、一対の開口26a,26bを橋部28が隔てている。この橋部28の幅、すなわち、一対の開口26a,26bの間の距離は、支持体12の凹部18の幅以下とされる。 The plate-shaped depth adjustment body 24 has a pair of openings 26a, 26b arranged on either side of a bridge portion 28. The pair of openings 26a, 26b penetrates vertically, and the bridge portion 28 separates the pair of openings 26a, 26b. The width of the bridge portion 28, i.e., the distance between the pair of openings 26a, 26b, is set to be equal to or less than the width of the recess 18 of the support body 12.
深さ調整体24は、一対の開口26a,26bに支持体12の一対の支持部16a,16bのそれぞれが挿入された状態で支持体12と一体化されて使用される。すなわち、一対の開口26a,26bのそれぞれの外端が支持体12の一対の傾斜部20a,20bのそれぞれにかかるまで一対の開口26a,26bに一対の支持部16a,16bが挿入される。 The depth adjustment body 24 is used by being integrated with the support body 12 with the pair of support parts 16a, 16b of the support body 12 inserted into the pair of openings 26a, 26b. That is, the pair of support parts 16a, 16b are inserted into the pair of openings 26a, 26b until the outer ends of the pair of openings 26a, 26b overlap the pair of inclined parts 20a, 20b of the support body 12.
ここで、外端が傾斜部20a,20bにかかるとは、該外端が傾斜部20a,20bに当たり、支持体12により深さ調整体24が安定的に支持される状態のことを指す。この状態では、深さ調整体24がもはやそれ以上に下方に進行できず、深さ調整体24の高さ位置が決まる。この状態は、一方の開口26aの外端と、他方の開口26bの外端と、の間の距離が、一方の傾斜部20aの深さ調整体24との接触点と、他方の傾斜部20bの深さ調整体24との接触点と、の間の距離と一致した状態である。 Here, the outer end hanging on the inclined portions 20a, 20b refers to a state in which the outer end abuts the inclined portions 20a, 20b and the depth adjustment body 24 is stably supported by the support body 12. In this state, the depth adjustment body 24 cannot proceed any further downward, and the height position of the depth adjustment body 24 is determined. In this state, the distance between the outer end of one opening 26a and the outer end of the other opening 26b is the same as the distance between the contact point of the one inclined portion 20a with the depth adjustment body 24 and the contact point of the other inclined portion 20b with the depth adjustment body 24.
このとき、橋部28が支持体12の凹部18に進入し、凹部18を部分的に埋める。図2(A)及び図2(B)は、支持体12に一体化された深さ調整体24を模式的に示す斜視図である。深さ調整体24と一体化された支持体12の凹部18の底は、橋部28の上端30により規定される。すなわち、凹部18の深さが深さ調整体24により変化する。 At this time, the bridge portion 28 enters the recess 18 of the support 12 and partially fills the recess 18. Figures 2(A) and 2(B) are perspective views that show a schematic view of the depth adjustment body 24 integrated with the support 12. The bottom of the recess 18 of the support 12 integrated with the depth adjustment body 24 is defined by the upper end 30 of the bridge portion 28. In other words, the depth of the recess 18 changes due to the depth adjustment body 24.
橋部28の上端30で規定される凹部18の深さは、支持体12と一体化された深さ調整体24の高さで変化する。換言すると、支持体12と一体化される深さ調整体24の高さを変化させることで凹部18の深さ所定の深さに調整できる。この深さ調整体24の高さの調整は、開口26a,26bの形状により実現できる。 The depth of the recess 18 defined by the upper end 30 of the bridge portion 28 varies with the height of the depth adjustment body 24 integrated with the support 12. In other words, the depth of the recess 18 can be adjusted to a predetermined depth by changing the height of the depth adjustment body 24 integrated with the support 12. The adjustment of the height of the depth adjustment body 24 can be achieved by the shape of the openings 26a, 26b.
次に、支持体12と一体化される深さ調整体24の高さの調整に寄与する一対の開口26a,26bの形状的な特徴について説明する。開口26a,26bの貫通方向遠方から見たとき、一対の開口26a,26bのそれぞれの内端32a,32bは互いに平行な直線状に形成され、内端32a,32bと対向する外端は段差形状で形成されている。 Next, the geometric features of the pair of openings 26a, 26b that contribute to adjusting the height of the depth adjustment body 24 integrated with the support body 12 will be described. When viewed from a distance in the penetration direction of the openings 26a, 26b, the inner ends 32a, 32b of the pair of openings 26a, 26b are formed in parallel straight lines, and the outer ends opposite the inner ends 32a, 32b are formed in a stepped shape.
図1等に示す例では、開口26a,26bの外端は5つの領域に分かれて構成されている。ただし、開口26a,26bの外端を構成する分かれた領域の数は5に限定されない。各領域は、内端32a,32bからの距離がそれぞれ異なる。また、各領域は、支持体12の厚み以上の長さとされる。さらに、2つの開口26a,26bの形状は、互いに線対称となる形状とされることが好ましい。 In the example shown in FIG. 1 etc., the outer ends of the openings 26a, 26b are divided into five regions. However, the number of divided regions that make up the outer ends of the openings 26a, 26b is not limited to five. The distances of each region from the inner ends 32a, 32b are different. Also, each region has a length equal to or greater than the thickness of the support 12. Furthermore, it is preferable that the shapes of the two openings 26a, 26b are linearly symmetrical to each other.
開口26a,26bの内端32a,32bから最も離れた領域を第1の外端34a,34bとし、段差を介して第1の外端34a,34bに隣接した領域を第2の外端36a,36bとする。同様に隣接する領域を第3の外端38a,38bとし、さらに隣接する領域を第4の外端40a,40bとする。さらに隣接する領域であり、内端32a,32bからの距離が最も短い領域を第5の外端42a,42bとする。 The region farthest from the inner ends 32a, 32b of the openings 26a, 26b is the first outer end 34a, 34b, and the region adjacent to the first outer end 34a, 34b via a step is the second outer end 36a, 36b. Similarly, the adjacent region is the third outer end 38a, 38b, and the further adjacent region is the fourth outer end 40a, 40b. The further adjacent region that is the closest to the inner ends 32a, 32b is the fifth outer end 42a, 42b.
開口26a,26bがこのように構成されていると、深さ調整体24及び支持体12を一体化するとき、開口26a,26bの外端のいずれの領域を支持体12の傾斜部20a,20bにかけるかにより深さ調整体24の高さを調整できる。これは、支持体12の一方の傾斜部20aの深さ調整体24に当たる接触点と、他方の傾斜部20bの深さ調整体24に当たる接触点と、の間の長さは、下方にいくほど長くなるためである。 When the openings 26a, 26b are configured in this manner, the height of the depth adjustment body 24 can be adjusted by determining which area of the outer ends of the openings 26a, 26b is placed over the inclined portions 20a, 20b of the support 12 when the depth adjustment body 24 and the support 12 are integrated. This is because the length between the contact point of one inclined portion 20a of the support 12 that contacts the depth adjustment body 24 and the contact point of the other inclined portion 20b that contacts the depth adjustment body 24 becomes longer the further downward.
例えば、図2(A)は、開口26a,26bの第3の外端38a,38bが支持体12の傾斜部20a,20bにかかる状態で支持体12に一体化された深さ調整体24を模式的に示す斜視図である。また、図2(B)は、開口26a,26bの第1の外端34a,34bが支持体12の傾斜部20a,20bにかかる状態で支持体12に一体化された深さ調整体24を模式的に示す斜視図である。 For example, FIG. 2(A) is a perspective view showing a depth adjustment body 24 integrated with the support body 12 in a state where the third outer ends 38a, 38b of the openings 26a, 26b are placed on the inclined portions 20a, 20b of the support body 12. FIG. 2(B) is a perspective view showing a depth adjustment body 24 integrated with the support body 12 in a state where the first outer ends 34a, 34b of the openings 26a, 26b are placed on the inclined portions 20a, 20b of the support body 12.
深さ調整体24を下降させ、開口26a,26bの第3の外端38a,38bが支持体12の傾斜部20a,20bにかかるとき、図2(A)に示す通り深さ調整体24が支持体12に支持される。図3(A)は、このときの支持体12及び深さ調整体24を模式的に示す断面図である。 When the depth adjustment body 24 is lowered and the third outer ends 38a, 38b of the openings 26a, 26b engage with the inclined portions 20a, 20b of the support body 12, the depth adjustment body 24 is supported by the support body 12 as shown in FIG. 2(A). FIG. 3(A) is a cross-sectional view showing the support body 12 and the depth adjustment body 24 at this time.
また、深さ調整体24を側方に移動させ、さらに下降させ、開口26a,26bの第1の外端34a,34bが支持体12の傾斜部20a,20bにかかるとき、図2(B)に示す通り深さ調整体24が再び支持体12に支持される。図3(B)は、このときの支持体12及び深さ調整体24を模式的に示す断面図である。 When the depth adjustment body 24 is moved laterally and further lowered so that the first outer ends 34a, 34b of the openings 26a, 26b engage with the inclined portions 20a, 20b of the support body 12, the depth adjustment body 24 is again supported by the support body 12 as shown in FIG. 2(B). FIG. 3(B) is a cross-sectional view showing the support body 12 and the depth adjustment body 24 at this time.
ここで、深さ調整体24の一方の第3の外端38aと、他方の第3の外端38bと、の距離は、一方の第1の外端34aと、他方の第1の外端34bと、の距離よりも短い。そのため、第3の外端38a,38bが傾斜部20a,20bにかかる際の深さ調整体24の高さは、第1の外端34a,34bが傾斜部20a,20bにかかる際の深さ調整体24の高さよりも高くなる。 The distance between the third outer end 38a on one side and the third outer end 38b on the other side of the depth adjustment body 24 is shorter than the distance between the first outer end 34a on one side and the first outer end 34b on the other side. Therefore, the height of the depth adjustment body 24 when the third outer ends 38a, 38b are placed on the inclined portions 20a, 20b is higher than the height of the depth adjustment body 24 when the first outer ends 34a, 34b are placed on the inclined portions 20a, 20b.
すなわち、図3(A)に示す通り第3の外端38a,38bが傾斜部20a,20bにかかるときの凹部18の深さ44は、図3(B)に示す通り第1の外端34a,34bが傾斜部20a,20bにかかるときの凹部18の深さ46よりも小さい。このように、支持体12と一体化される際の深さ調整体24の高さにより凹部18における橋部28の上端30の高さが変わり、この上端30の高さが凹部18の深さを規定するのであるから、支持体12の凹部18の深さを深さ調整体24で調整できる。 That is, as shown in FIG. 3(A), the depth 44 of the recess 18 when the third outer ends 38a, 38b rest on the inclined portions 20a, 20b is smaller than the depth 46 of the recess 18 when the first outer ends 34a, 34b rest on the inclined portions 20a, 20b as shown in FIG. 3(B). In this way, the height of the upper end 30 of the bridge portion 28 in the recess 18 changes depending on the height of the depth adjustment body 24 when it is integrated with the support body 12, and since the height of this upper end 30 determines the depth of the recess 18, the depth of the recess 18 in the support body 12 can be adjusted by the depth adjustment body 24.
例えば、20.0mm角の半導体チップ1の強度を評価したい場合、一対の支持部16a,16bの間隔、すなわち、凹部18の幅は5mm以上10mm以下とするとよい。また、支持体12の傾斜部20a,20bは、底面22に対して45度傾斜しているとよい。また、深さ調整体24と一体化されていないときの支持体12の凹部18の深さを15mm以下とするとよい。 For example, if one wishes to evaluate the strength of a semiconductor chip 1 that is 20.0 mm square, the distance between the pair of support portions 16a, 16b, i.e., the width of the recess 18, should be between 5 mm and 10 mm. Also, the inclined portions 20a, 20b of the support 12 should be inclined at 45 degrees with respect to the bottom surface 22. Also, the depth of the recess 18 of the support 12 when not integrated with the depth adjustment body 24 should be 15 mm or less.
そして、深さ調整体24の開口26a,26bの第1の外端34a,34bを傾斜部20a,20bにかけた際の深さ調整体24の橋部28の上端30が凹部18の上端から10mm深い位置となるとよい。同様に、第2の外端36a,36bを傾斜部20a,20bにかけた際の凹部18の深さは8mm、第3の外端38a,38bでは6mm、第4の外端40a,40bでは8mm、そして、第5の外端42a,42bでは2mmとなるとよい。ただし、凹部18の調整可能な深さは、これに限定されない。 When the first outer ends 34a, 34b of the openings 26a, 26b of the depth adjustment body 24 are placed on the inclined portions 20a, 20b, the upper end 30 of the bridge portion 28 of the depth adjustment body 24 should be located 10 mm deeper than the upper end of the recess 18. Similarly, when the second outer ends 36a, 36b are placed on the inclined portions 20a, 20b, the depth of the recess 18 should be 8 mm, the third outer ends 38a, 38b should be 6 mm, the fourth outer ends 40a, 40b should be 8 mm, and the fifth outer ends 42a, 42b should be 2 mm. However, the adjustable depth of the recess 18 is not limited to this.
半導体チップ1の抗折強度を強度評価用治具2で評価する際には、予め深さ調整体24を所定の高さで支持体12に一体化させておく。そして、一対の支持部16a,16bの間を渡すように支持部16a,16bの上に半導体チップ1を載せる。そして、凹部18の上方に押圧体4を移動させ、一対の支持部16a,16bに支持された半導体チップ1を上方から押圧体4によって押圧する。すると、押圧体4で押圧された半導体チップ1が凹部18に向けて湾曲する。 When evaluating the flexural strength of the semiconductor chip 1 using the strength evaluation jig 2, the depth adjustment body 24 is first integrated with the support body 12 at a predetermined height. Then, the semiconductor chip 1 is placed on the pair of supports 16a, 16b so as to span between them. Then, the pressing body 4 is moved above the recess 18, and the semiconductor chip 1 supported by the pair of supports 16a, 16b is pressed from above by the pressing body 4. Then, the semiconductor chip 1 pressed by the pressing body 4 is curved toward the recess 18.
図4(A)及び図4(B)は、押圧体4で押圧され湾曲した半導体チップ1を模式的に示す断面図である。例えば、湾曲し凹部18に進入した半導体チップ1は、凹部18の底、すなわち、深さ調整体24の橋部28の上端30に接触するまで押圧体4により押圧される。 Figures 4(A) and 4(B) are cross-sectional views that show a semiconductor chip 1 that has been pressed and curved by a pressing body 4. For example, the semiconductor chip 1 that has curved and entered the recess 18 is pressed by the pressing body 4 until it comes into contact with the bottom of the recess 18, i.e., the upper end 30 of the bridge portion 28 of the depth adjustment body 24.
この過程において、半導体チップ1に割れが生じたか否かが検知される。例えば、半導体チップ1の割れの発生の検知は、半導体チップ1から発生する破壊音を検知することで実施される。または、深さ調整体24の上端30に接触するまで押圧体4で半導体チップ1を押圧した後、押圧体4による押圧を解除し、半導体チップ1を顕微鏡等で観察することで割れの発生を検知してもよい。割れの検出方法及び割れが検出されるタイミングは、特に限定されない。 During this process, it is detected whether or not a crack has occurred in the semiconductor chip 1. For example, the occurrence of a crack in the semiconductor chip 1 is detected by detecting the sound of destruction generated from the semiconductor chip 1. Alternatively, the occurrence of a crack may be detected by pressing the semiconductor chip 1 with the pressing body 4 until it contacts the upper end 30 of the depth adjustment body 24, releasing the pressure from the pressing body 4, and observing the semiconductor chip 1 with a microscope or the like. The method of detecting the crack and the timing at which the crack is detected are not particularly limited.
例えば、二つの半導体チップ1の抗折強度を比較する場合、深さ調整体24の開口26a,26bの第5の外端42a,42bを支持体12の傾斜部20a,20bにかけて、支持体12及び深さ調整体24を一体化する。そして、一方の半導体チップ1を一対の支持部16a,16bに載せ、押圧体4でこの半導体チップ1を押圧して深さ調整体24の橋部28の上端30に接触させ、このときの半導体チップ1の割れの有無を検出する。同様に、他方の半導体チップ1を押圧体4で押圧し、割れの有無を検出する。 For example, when comparing the flexural strength of two semiconductor chips 1, the fifth outer ends 42a, 42b of the openings 26a, 26b of the depth adjustment body 24 are placed over the inclined portions 20a, 20b of the support body 12 to integrate the support body 12 and the depth adjustment body 24. One of the semiconductor chips 1 is then placed on the pair of supports 16a, 16b, and the pressing body 4 is used to press the semiconductor chip 1 so that it comes into contact with the upper end 30 of the bridge portion 28 of the depth adjustment body 24, and the presence or absence of cracks in the semiconductor chip 1 at this time is detected. Similarly, the other semiconductor chip 1 is pressed with the pressing body 4 to detect the presence or absence of cracks.
その結果、一方の半導体チップ1に割れが生じたことが検出され、他方の半導体チップ1に割れが生じたことが検出されない場合、該一方の半導体チップ1の抗折強度が比較的小さいことが理解される。また、両方の半導体チップ1で割れが生じたことが検出されない場合、凹部18の深さが大きくなるように深さ調整体24の高さを変更し、同様に各半導体チップ1の押圧試験を実施する。 As a result, if a crack is detected in one semiconductor chip 1 but not in the other semiconductor chip 1, it is understood that the flexural strength of that one semiconductor chip 1 is relatively low. If a crack is not detected in either semiconductor chip 1, the height of the depth adjuster 24 is changed so that the depth of the recess 18 is increased, and a compression test is similarly performed on each semiconductor chip 1.
本実施形態に係る強度評価用治具2では、支持体12及び深さ調整体24の一体化の態様を変更することで凹部18の深さを調整できる。そして、複数の半導体チップ1をそれぞれ押圧体4で押圧して、各半導体チップ1を同程度に湾曲できるため、このときの割れの発生の有無により各半導体チップ1の抗折強度を容易に比較できる。各半導体チップ1の抗折強度を比較するだけであるなら、3点曲げ法等の規格の通りに抗折強度を精密に測定する必要がなく、十分に目的を達成できる。 In the strength evaluation jig 2 according to this embodiment, the depth of the recess 18 can be adjusted by changing the manner in which the support 12 and the depth adjustment body 24 are integrated. Furthermore, by pressing each of the multiple semiconductor chips 1 with the pressing body 4, each semiconductor chip 1 can be bent to the same degree, so that the flexural strength of each semiconductor chip 1 can be easily compared based on whether or not cracks occur at this time. If it is only necessary to compare the flexural strength of each semiconductor chip 1, there is no need to precisely measure the flexural strength according to standards such as the three-point bending method, and the purpose can be fully achieved.
次に、本実施形態に係る強度評価用治具の第1の変形例について説明する。図5(A)は、第1の変形例に係る強度評価用治具の支持体12及び深さ調整体24aの使用態様を模式的に示す斜視図である。図5(B)は、第1の変形例に係る強度評価用治具2aの使用態様を模式的に示す断面図である。 Next, a first modified example of the strength evaluation jig according to this embodiment will be described. FIG. 5(A) is a perspective view that shows a schematic usage mode of the support body 12 and depth adjustment body 24a of the strength evaluation jig according to the first modified example. FIG. 5(B) is a cross-sectional view that shows a schematic usage mode of the strength evaluation jig 2a according to the first modified example.
第1の変形例に係る強度評価用治具2aの支持体12及び押圧体4には変更はなく、深さ調整体24aにのみ変更が加えられており、深さ調整体24aの変更点は一対の開口48a,48bの構成のみである。そのため、他の構成については上述の説明を適宜参照できる。 The support body 12 and the pressing body 4 of the strength evaluation jig 2a in the first modified example are unchanged, and only the depth adjustment body 24a is modified, and the only change to the depth adjustment body 24a is the configuration of the pair of openings 48a, 48b. Therefore, the above explanation can be referred to as appropriate for the other configurations.
第1の変形例に係る強度評価用治具2aの深さ調整体24aでは、一対の開口48a,48bの内壁が支持体12の傾斜部20a,20bのそれぞれに対応した傾斜壁50a,50bとなっている。この場合、図5(B)に示す通り、一対の支持部16a,16bをそれぞれ一対の開口48a,48bに通し、傾斜壁50a,50bで支持体12の傾斜部20a,20bを挟ませると支持体12及び深さ調整体24aを一体化できる。 In the depth adjustment body 24a of the strength evaluation jig 2a according to the first modified example, the inner walls of the pair of openings 48a, 48b are inclined walls 50a, 50b corresponding to the inclined portions 20a, 20b of the support body 12. In this case, as shown in FIG. 5(B), the pair of support parts 16a, 16b are passed through the pair of openings 48a, 48b, respectively, and the inclined portions 20a, 20b of the support body 12 are sandwiched between the inclined walls 50a, 50b, thereby integrating the support body 12 and the depth adjustment body 24a.
このとき、支持体12の傾斜部20a,20bと、深さ調整体24aの傾斜壁50a,50bが面で接触するため、支持体12により深さ調整体24aがより強固かつ安定的に支持される。そして、深さ調整体24aが面接触で支持体12に支持されていると、深さ調整体24aがより高精度に所定の高さに位置付けられる。換言すると、深さ調整体24aの固定高さのばらつきが小さくなる。そのため、半導体チップ1の抗折強度の評価及び比較をより精密に実施できる。 At this time, the inclined portions 20a, 20b of the support 12 and the inclined walls 50a, 50b of the depth adjustment body 24a are in surface contact with each other, so that the depth adjustment body 24a is supported by the support 12 more firmly and stably. When the depth adjustment body 24a is supported by the support 12 in surface contact, the depth adjustment body 24a can be positioned at a specified height with higher accuracy. In other words, the variation in the fixed height of the depth adjustment body 24a is reduced. Therefore, the evaluation and comparison of the flexural strength of the semiconductor chip 1 can be performed more precisely.
次に、本実施形態に係る強度評価用治具の第2の変形例について説明する。図6(A)は、第2の変形例に係る強度評価用治具の支持体12a及び深さ調整体24bを模式的に示す斜視図である。 Next, a second modified example of the strength evaluation jig according to this embodiment will be described. Figure 6 (A) is a perspective view that shows a schematic diagram of the support body 12a and the depth adjustment body 24b of the strength evaluation jig according to the second modified example.
第2の変形例に係る強度評価用治具では、支持体12aの傾斜部54a,54bにそれぞれ該傾斜部54a,54bに沿ったレール状の凸部56a,56bが形成されている。そして、深さ調整体24bの一対の開口60a,60bの外端62a,62bの内壁下部には、該凸部56a,56bが嵌め入れられる形状の凹部58aが形成されている。それ以外には変更点はなく、他の構成については上述の説明を適宜参照できる。 In the strength evaluation jig according to the second modified example, rail-shaped convex portions 56a, 56b are formed along the inclined portions 54a, 54b of the support body 12a, respectively. A concave portion 58a is formed in the lower part of the inner wall of the outer ends 62a, 62b of the pair of openings 60a, 60b of the depth adjustment body 24b, into which the convex portions 56a, 56b are fitted. There are no other changes, and the above description can be referred to as appropriate for other configurations.
深さ調整体24bを支持体12aに一体化させる際、所定の外端62a,62bを支持体12aの傾斜部54a,54bに接触させる。このとき、傾斜部54a,54bに設けられた凸部56a,56bが深さ調整体24bの凹部58aに嵌め入れられる。深さ調整体24bを複数の異なる高さで支持体12aに一体化できる場合、凹部58aは、それぞれの高さで深さ調整体24bを支持体12aに一体化したときに凸部56a,56bに嵌め入れられるような数及び位置で開口60a,60bの内壁に設けられる。 When the depth adjustment body 24b is integrated with the support body 12a, the predetermined outer ends 62a, 62b are brought into contact with the inclined portions 54a, 54b of the support body 12a. At this time, the convex portions 56a, 56b provided on the inclined portions 54a, 54b are fitted into the concave portions 58a of the depth adjustment body 24b. If the depth adjustment body 24b can be integrated with the support body 12a at a plurality of different heights, the concave portions 58a are provided on the inner walls of the openings 60a, 60b in such a number and positions that they can be fitted into the convex portions 56a, 56b when the depth adjustment body 24b is integrated with the support body 12a at each height.
半導体チップ1が押圧体4で上方から押圧されている間に何らかの理由で意図せずに深さ調整体24bに横方向(水平方向、底面22に平行な方向)に成分を持つ力がかかる場合がある。しかしながら、凸部56a,56bと、凹部58aと、が噛み合っている場合、深さ調整体24bが支持体12aに対してずれて深さ調整体24bの高さが変わることはない。 While the semiconductor chip 1 is being pressed from above by the pressing body 4, for some reason a force having a lateral component (horizontal direction, parallel to the bottom surface 22) may be unintentionally applied to the depth adjustment body 24b. However, if the convex portions 56a, 56b and the concave portion 58a are engaged, the depth adjustment body 24b will not shift relative to the support body 12a, causing the height of the depth adjustment body 24b to change.
次に、本実施形態に係る強度評価用治具の第3の変形例について説明する。図6(B)は、第3の変形例に係る強度評価用治具2bの支持体12b及び押圧体4と、押圧されている半導体チップ1を模式的に示す断面図である。第3の変形例に係る強度評価用治具2bは、深さ調整体を有さない。 Next, a third modified example of the strength evaluation jig according to this embodiment will be described. FIG. 6(B) is a cross-sectional view that shows a schematic diagram of the support 12b and the pressing body 4 of the strength evaluation jig 2b according to the third modified example, and the semiconductor chip 1 being pressed. The strength evaluation jig 2b according to the third modified example does not have a depth adjustment body.
そして、支持体12bの側面の凹部18の両脇には、それぞれ、均等な間隔で上下方向に並ぶ目盛り64a,64bが付されている。凹部18の両側において、目盛り64a,64bを構成する複数の線は、それぞれ同じ高さに設けられる。第3の変形例に係る強度評価用治具2bは、それ以外には変更点はない。他の構成については、上述の説明を適宜参照できる。 Scales 64a, 64b are provided on both sides of the recess 18 on the side surface of the support 12b, aligned vertically at equal intervals. On both sides of the recess 18, the multiple lines constituting the scales 64a, 64b are set at the same height. There are no other changes to the strength evaluation jig 2b according to the third modified example. For other configurations, refer to the above explanation as appropriate.
強度評価用治具2bで半導体チップ1の抗折強度を評価する際には、作業者は、支持体12bの一対の支持部16a,16bの上に半導体チップ1を載せ、押圧体4を下降させ、半導体チップ1を押圧して湾曲させ凹部18に進入させる。このとき、半導体チップ1を監視し、割れが生じた場合にこれを即時に検知する。 When evaluating the flexural strength of the semiconductor chip 1 with the strength evaluation jig 2b, the worker places the semiconductor chip 1 on the pair of supports 16a, 16b of the support body 12b, and lowers the pressing body 4 to press and bend the semiconductor chip 1 into the recess 18. At this time, the semiconductor chip 1 is monitored, and any cracks that occur are immediately detected.
そして、半導体チップ1の割れが検知されたときに押圧体4の下降を停止し、目盛り64a,64bを参照してこのときの凹部18中における半導体チップ1の最下点の高さ位置を読み取る。図6(B)に示す例では、半導体チップ1の最下端が上から4番目の目盛り線の高さに達していることが理解される。この最下端の位置が半導体チップ1の抗折強度を示す指標となる。 When a crack in the semiconductor chip 1 is detected, the descent of the pressing body 4 is stopped, and the height position of the lowest point of the semiconductor chip 1 in the recess 18 at this time is read by referring to the scales 64a and 64b. In the example shown in FIG. 6(B), it can be seen that the lowest end of the semiconductor chip 1 has reached the height of the fourth scale line from the top. The position of this lowest end is an index of the flexural strength of the semiconductor chip 1.
測定対象となる各半導体チップ1を同様に次々に支持体12a,12bに支持させ、押圧体4で上方から押圧し、半導体チップ1に割れが生じた際の半導体チップ1の最下端の位置を目盛り64a,64bを参照して読み取る。各半導体チップ1の割れが生じた際の最下端の高さ位置を比較することで、各半導体チップ1の抗折強度の大小関係を特定できる。第3の変形例に係る強度評価用治具2bでは、深さ調整体が不要であり、より簡易的な構成で迅速に半導体チップ1の抗折強度を評価できる。 Each semiconductor chip 1 to be measured is supported in turn by supports 12a, 12b in the same manner, pressed from above by pressing body 4, and the position of the bottom end of semiconductor chip 1 when cracks occur is read by referring to scales 64a, 64b. By comparing the height positions of the bottom ends of each semiconductor chip 1 when cracks occur, the magnitude relationship of the flexural strength of each semiconductor chip 1 can be determined. In the strength evaluation jig 2b of the third modified example, a depth adjustment body is not required, and the flexural strength of semiconductor chip 1 can be evaluated quickly with a simpler configuration.
なお、第3の変形例に係る強度評価用治具2bでは、支持体12bの傾斜部20a,20bに用途はなく、支持体12bは傾斜部20a,20bを有していなくてもよい。しかしながら、支持体12bが傾斜部20a,20bを有している場合、深さ調整体24を支持体12bに一体化して使用可能となる。この場合、目的に応じた多様な使用態様で強度評価用治具2bを使用できる。 In the strength evaluation jig 2b according to the third modified example, the inclined portions 20a, 20b of the support 12b have no use, and the support 12b does not need to have the inclined portions 20a, 20b. However, if the support 12b has the inclined portions 20a, 20b, the depth adjustment body 24 can be integrated with the support 12b for use. In this case, the strength evaluation jig 2b can be used in a variety of ways according to the purpose.
次に、本実施形態に係る強度評価用治具の第4の変形例について説明する。図7(A)は、半導体チップ1と、第4の変形例に係る第1の強度評価用治具2cと、を模式的に示す側面図であり、図7(B)は、半導体チップ1と、第4の変形例に係る第2の強度評価用治具2dと、を模式的に示す側面図である。図8(A)は、第4の変形例に係る第1の強度評価用治具2cの使用態様を模式的に示す側面図であり、図8(B)は、第4の変形例に係る第2の強度評価用治具2dの使用態様を模式的に示す側面図である。 Next, a fourth modified example of the strength evaluation jig according to this embodiment will be described. FIG. 7(A) is a side view showing a semiconductor chip 1 and a first strength evaluation jig 2c according to the fourth modified example, and FIG. 7(B) is a side view showing a semiconductor chip 1 and a second strength evaluation jig 2d according to the fourth modified example. FIG. 8(A) is a side view showing a schematic usage mode of the first strength evaluation jig 2c according to the fourth modified example, and FIG. 8(B) is a side view showing a schematic usage mode of the second strength evaluation jig 2d according to the fourth modified example.
半導体チップ1の抗折強度は、例えば、互いに構成の異なる複数の強度評価用治具2c,2dの組により評価される。ただし、強度評価用治具2c,2dの一つを使用するだけでも半導体チップ1の抗折強度の簡易的な評価は可能である。第4の変形例に係る第1の強度評価用治具2cは、支持体12cと、押圧体4cと、から構成され、第4の変形例に係る第2の強度評価用治具2dは、支持体12dと、押圧体4dと、から構成される。以下、第1の強度評価用治具2cを例に説明する。 The flexural strength of the semiconductor chip 1 is evaluated, for example, by a set of multiple strength evaluation jigs 2c, 2d with different configurations. However, a simple evaluation of the flexural strength of the semiconductor chip 1 is possible by using only one of the strength evaluation jigs 2c, 2d. The first strength evaluation jig 2c of the fourth modified example is composed of a support 12c and a pressing body 4c, and the second strength evaluation jig 2d of the fourth modified example is composed of a support 12d and a pressing body 4d. The following describes the first strength evaluation jig 2c as an example.
第1の強度評価用治具2cの支持体12cは、一対の支持部68a,68bをそれぞれ含む一対の板状部70a,70bを有する。ここで、第1の強度評価用治具2cでは、一対の支持部68a,68bは、線状ではなく面状であり、一対の板状部70a,70bの内面を構成する。そして、支持体12cでは、一対の板状部70a,70bのそれぞれ一端が互いに接続されることで一対の板状部70a,70bがV字形状に配置され、一対の板状部70a,70bのそれぞれ内面により凹部74aが構成される。 The support 12c of the first strength evaluation jig 2c has a pair of plate-shaped parts 70a, 70b each including a pair of support parts 68a, 68b. Here, in the first strength evaluation jig 2c, the pair of support parts 68a, 68b are planar rather than linear, and form the inner surfaces of the pair of plate-shaped parts 70a, 70b. In the support 12c, the pair of plate-shaped parts 70a, 70b are arranged in a V-shape by connecting one end of each of the pair of plate-shaped parts 70a, 70b to each other, and a recess 74a is formed by the inner surfaces of the pair of plate-shaped parts 70a, 70b.
また、押圧体4cは、一対の外面76a,76bを有する。そして、支持体12cの一対の板状部70a,70bのそれぞれの該内面がなす角度は、押圧体4cの一対の外面76a,76bがなす角度と一致する。 The pressing body 4c also has a pair of outer surfaces 76a, 76b. The angle formed by the inner surfaces of the pair of plate-shaped portions 70a, 70b of the support body 12c coincides with the angle formed by the pair of outer surfaces 76a, 76b of the pressing body 4c.
第1の強度評価用治具2cで半導体チップ1の抗折強度を評価する際には、まず、図7(A)に示す通り、支持体12cの一対の支持部66a,66bで半導体チップ1を支持する。そして、押圧体4cの下端の押圧部80aを半導体チップ1に接触させて押圧体4cを湾曲させ、半導体チップ1を凹部74aの下方に向けて進入させる。すると、最終的に、図8(A)に示す通り、支持体12cの内面に押圧体4cの外面76a,76bが向き合い、支持体12cと押圧体4cの間に半導体チップ1が挟まれた状態となる。 When evaluating the flexural strength of the semiconductor chip 1 with the first strength evaluation jig 2c, first, as shown in FIG. 7(A), the semiconductor chip 1 is supported by a pair of support portions 66a, 66b of the support 12c. Then, the pressing portion 80a at the lower end of the pressing body 4c is brought into contact with the semiconductor chip 1 to bend the pressing body 4c, and the semiconductor chip 1 is inserted downward into the recess 74a. Finally, as shown in FIG. 8(A), the outer surfaces 76a, 76b of the pressing body 4c face the inner surface of the support 12c, and the semiconductor chip 1 is sandwiched between the support 12c and the pressing body 4c.
このときの半導体チップ1の湾曲の程度は、支持体12cの一対の板状部70a,70bのそれぞれの内面がなす角度(押圧体4cの一対の外面76a,76bがなす角度)により決まる。すなわち、第1の強度評価用治具2cを使用すると、抗折強度の評価対象となる各半導体チップ1を同程度に湾曲できる。そして、湾曲された半導体チップ1に割れが生じたか否かを判定することにより、各半導体チップ1が所定の抗折強度を有しているか否かを判定できる。 The degree of bending of the semiconductor chip 1 at this time is determined by the angle formed by the inner surfaces of the pair of plate-like portions 70a, 70b of the support 12c (the angle formed by the pair of outer surfaces 76a, 76b of the pressing body 4c). In other words, by using the first strength evaluation jig 2c, each semiconductor chip 1 to be evaluated for flexural strength can be bent to the same degree. Then, by determining whether cracks have occurred in the bent semiconductor chip 1, it can be determined whether each semiconductor chip 1 has a predetermined flexural strength.
ここで、抗折強度の評価時の半導体チップ1の湾曲の程度は、支持体12cの一対の板状部70a,70bのそれぞれの内面がなす角度により決まる。そこで、該内面がなす角度が異なる他の強度評価用治具を使用すると、半導体チップ1の抗折強度をより詳細に評価できる。 Here, the degree of curvature of the semiconductor chip 1 when evaluating the flexural strength is determined by the angle formed by the inner surfaces of the pair of plate-shaped portions 70a, 70b of the support 12c. Therefore, by using another strength evaluation tool in which the inner surfaces form a different angle, the flexural strength of the semiconductor chip 1 can be evaluated in more detail.
図7(B)に示す第4の変形例に係る第2の強度評価用治具2dは、内面にそれぞれ支持部68a,68bを有する一対の板状部72a,72bを有した支持体12dと、一対の外面78a,78bを有する押圧体4dと、を備える。支持体12dは、支持部68a,68bの間に凹部74bを有する。押圧体4dは、下端の押圧部80bで半導体チップ1に接触し該半導体チップ1を上方から押圧する。 The second strength evaluation jig 2d according to the fourth modified example shown in FIG. 7(B) includes a support 12d having a pair of plate-shaped portions 72a, 72b with support portions 68a, 68b on their inner surfaces, and a pressing body 4d having a pair of outer surfaces 78a, 78b. The support 12d has a recess 74b between the support portions 68a, 68b. The pressing body 4d contacts the semiconductor chip 1 with the pressing portion 80b at its lower end and presses the semiconductor chip 1 from above.
そして、第2の強度評価用治具2dは、一対の板状部72a,72bのそれぞれの内面がなす角度が第1の強度評価用治具2cとは異なる。この場合、図8(A)及び図8(B)に示す通り、第2の強度評価用治具2dによる抗折強度の評価時における半導体チップ1の湾曲の程度は、第1の強度評価用治具2cによる抗折強度の評価時における半導体チップ1の湾曲の程度とは異なる。 The second strength evaluation jig 2d differs from the first strength evaluation jig 2c in the angle formed by the inner surfaces of the pair of plate-shaped portions 72a, 72b. In this case, as shown in Figures 8(A) and 8(B), the degree of curvature of the semiconductor chip 1 when evaluating the flexural strength using the second strength evaluation jig 2d differs from the degree of curvature of the semiconductor chip 1 when evaluating the flexural strength using the first strength evaluation jig 2c.
例えば、抗折強度の評価対象となる複数の半導体チップ1を第2の強度評価用治具2dで湾曲させ、割れが生じなかった半導体チップ1を第1の強度評価用治具2cで湾曲させる。すると、第2の強度評価用治具2dの使用時に割れが生じたグループと、第1の強度評価用治具2cの使用時に割れが生じたグループと、第1の強度評価用治具2cを使用しても割れの生じなかったグループと、に評価対象の半導体チップ1を分類できる。すなわち、半導体チップ1を抗折強度で分類できる。 For example, multiple semiconductor chips 1 to be evaluated for flexural strength are bent with the second strength evaluation jig 2d, and semiconductor chips 1 that did not crack are bent with the first strength evaluation jig 2c. The semiconductor chips 1 to be evaluated can then be classified into a group in which cracks occurred when the second strength evaluation jig 2d was used, a group in which cracks occurred when the first strength evaluation jig 2c was used, and a group in which no cracks occurred even when the first strength evaluation jig 2c was used. In other words, the semiconductor chips 1 can be classified by flexural strength.
すなわち、支持体の一対の板状部のそれぞれの内面がなす角度が異なる第4の変形例に係る複数の強度評価用治具を使用すると、その強度評価用治具の数に応じて細かく半導体チップ1を抗折強度で分類できる。そして、第4の変形例に係る強度評価用治具では、深さ調整体を使用することなく半導体チップ1を所定の程度で湾曲できるため、複数の半導体チップ1の抗折強度を容易に評価し比較できる。 In other words, by using multiple strength evaluation jigs according to the fourth modified example in which the inner faces of the pair of plate-shaped portions of the support body form different angles, the semiconductor chips 1 can be finely classified by their flexural strength according to the number of strength evaluation jigs. Furthermore, with the strength evaluation jig according to the fourth modified example, the semiconductor chips 1 can be bent to a predetermined degree without using a depth adjuster, so that the flexural strengths of multiple semiconductor chips 1 can be easily evaluated and compared.
ただし、半導体チップ1の抗折強度を評価する際には、一つの第4の変形例に係る強度評価用治具だけが使用されてもよい。例えば、半導体チップ1の特定の用途において必要とされる抗折強度に対応する程度で半導体チップ1を湾曲させる強度評価用治具のみを使用すると、評価対象となる各半導体チップ1が当該用途に耐えうる抗折強度を有するか否かを容易に評価できる。 However, when evaluating the flexural strength of the semiconductor chip 1, only one strength evaluation jig according to the fourth modified example may be used. For example, by using only a strength evaluation jig that bends the semiconductor chip 1 to a degree that corresponds to the flexural strength required for a specific application of the semiconductor chip 1, it is possible to easily evaluate whether each semiconductor chip 1 to be evaluated has a flexural strength sufficient for that application.
なお、本発明は、上記の実施形態の記載に限定されず、種々変更して実施可能である。例えば、上記実施形態では、図2(A)等に示す通り、開口26a,26bの外端が複数の領域に分けられている深さ調整体24を含む強度評価用治具2について説明したが、本発明の一態様はこれに限定されない。 The present invention is not limited to the above embodiment, and can be modified in various ways. For example, in the above embodiment, as shown in FIG. 2(A) and other figures, a strength evaluation jig 2 including a depth adjustment body 24 in which the outer ends of the openings 26a, 26b are divided into multiple regions is described, but one aspect of the present invention is not limited to this.
すなわち、深さ調整体24の一対の開口26a,26bのそれぞれの外端は、複数の領域に分けられていなくてもよい。この場合、一対の開口26a,26bのそれぞれの外端間の距離の異なる複数の深さ調整体24を準備し、それらの深さ調整体24を使い分けることで支持体12の凹部18の深さの調整が可能となる。 In other words, the outer ends of each of the pair of openings 26a, 26b of the depth adjustment body 24 do not have to be divided into multiple regions. In this case, multiple depth adjustment bodies 24 with different distances between the outer ends of each of the pair of openings 26a, 26b are prepared, and the depth of the recess 18 of the support body 12 can be adjusted by using these depth adjustment bodies 24 appropriately.
例えば、一対の開口26a,26bのそれぞれの外端の間の距離が比較的短い深さ調整体24を支持体12に一体化させると、深さ調整体24が比較的高い位置に位置付けられ、凹部18が比較的浅くなる。また、一対の開口26a,26bのそれぞれの外端の間の距離が比較的長い深さ調整体24を支持体12に一体化させると、深さ調整体24が比較的低い位置に位置付けられ、凹部18が比較的深くなる。 For example, when a depth adjustment body 24 in which the distance between the outer ends of a pair of openings 26a, 26b is relatively short is integrated into the support body 12, the depth adjustment body 24 is positioned at a relatively high position, and the recess 18 is relatively shallow. When a depth adjustment body 24 in which the distance between the outer ends of a pair of openings 26a, 26b is relatively long is integrated into the support body 12, the depth adjustment body 24 is positioned at a relatively low position, and the recess 18 is relatively deep.
すなわち、本発明の一態様に係る強度評価用治具2は、一対の開口26a,26bのそれぞれの外端の間の距離が互いに異なる複数の深さ調整体24と、一つの支持体12と、一つの押圧体4と、により構成されていてもよい。この場合においても、凹部18の深さを深さ調整体24で切り替えつつ半導体チップ1の抗折強度を評価できる。 In other words, the strength evaluation jig 2 according to one aspect of the present invention may be composed of a plurality of depth adjustment bodies 24 in which the distance between the respective outer ends of a pair of openings 26a, 26b differs from each other, one support body 12, and one pressing body 4. Even in this case, the flexural strength of the semiconductor chip 1 can be evaluated while changing the depth of the recess 18 with the depth adjustment body 24.
その他、上記実施形態に係る構造、方法等は、本発明の目的の範囲を逸脱しない限りにおいて適宜変更して実施できる。 In addition, the structures, methods, etc. according to the above embodiments can be modified as appropriate without departing from the scope of the present invention.
1 半導体チップ
2,2a,2b,2c,2d 強度評価用治具
4,4c,4d 押圧体
6 上面
8a,8b,76a,76b,78a,78b 外面
10,80a,80b 押圧部
12,12a,12b,12c,12d 支持体
14 本体
16a,16b,66a,66b,68a,68b 支持部
18,74a,74b 凹部
20a,20b,54a,54b 傾斜部
22 底面
24,24a,24b 深さ調整体
26a,26b,48a,48b,60a,60b 開口
28 橋部
30 上端
32a,32b,52a,52b 内端
34a,34b,36a,36b,38a,38b,40a,40b,42a,42b,62a,62b 外端
44,46 深さ
50a,50b 傾斜壁
56a,56b 凸部
58a 凹部
64a,64b 目盛り
70a,70b,72a,72b 板状部
REFERENCE SIGNS LIST 1 semiconductor chip 2, 2a, 2b, 2c, 2d strength evaluation jig 4, 4c, 4d pressing body 6 upper surface 8a, 8b, 76a, 76b, 78a, 78b outer surface 10, 80a, 80b pressing portion 12, 12a, 12b, 12c, 12d support body 14 main body 16a, 16b, 66a, 66b, 68a, 68b support portion 18, 74a, 74b recess 20a, 20b, 54a, 54b inclined portion 22 bottom surface 24, 24a, 24b depth adjustment body 26a, 26b, 48a, 48b, 60a, 60b opening 28 bridge portion 30 upper end 32a, 32b, 52a, 52b inner end 34a, 34b, 36a, 36b, 38a, 38b, 40a, 40b, 42a, 42b, 62a, 62b Outer end 44, 46 Depth 50a, 50b Inclined wall 56a, 56b Convex portion 58a Concave portion 64a, 64b Scale 70a, 70b, 72a, 72b Plate-shaped portion
Claims (1)
該半導体チップを支持する支持体と、
該支持体に支持された該半導体チップを押圧する押圧体と、
板状の深さ調整体と、を備え、
該支持体は、
該半導体チップをそれぞれ支持する一対の支持部と、
一対の該支持部の間の凹部と、
一対の該支持部のそれぞれ外側に向けて傾斜した一対の傾斜部と、を有し、
該深さ調整体は、該支持体の一対の該支持部のそれぞれに挿入される一対の開口を有し、
該深さ調整体の一対の該開口のそれぞれの外端が該支持体の一対の該傾斜部のそれぞれにかかるまで一対の該開口のそれぞれに該支持体の一対の該支持部のそれぞれを挿入したとき、該深さ調整体の一対の該開口の間の橋部が該支持体の該凹部に所定の深さまで進入し、該橋部の上端が該凹部の深さを規定し、
一対の該支持部に支持された該半導体チップを該押圧体によって押圧し湾曲する該半導体チップが該支持体の該凹部に進入する際の該半導体チップの進入深さと、該凹部に進入した該半導体チップの割れの有無と、によって該半導体チップの強度を評価できることを特徴とする強度評価用治具。 A jig for evaluating the strength of a semiconductor chip,
A support for supporting the semiconductor chip;
a pressing body that presses the semiconductor chip supported by the support;
A plate-shaped depth adjustment body ,
The support is
a pair of support parts each supporting the semiconductor chip;
A recess between the pair of support portions;
a pair of inclined portions inclined toward the outside of the pair of support portions ,
the depth adjustment body has a pair of openings that are inserted into the pair of support portions of the support body,
when the pair of support portions of the support body are inserted into the pair of openings until the outer ends of the pair of openings of the depth adjustment body overlap the pair of inclined portions of the support body, a bridge portion between the pair of openings of the depth adjustment body enters the recess of the support body to a predetermined depth, and an upper end of the bridge portion defines the depth of the recess;
A strength evaluation jig capable of evaluating the strength of a semiconductor chip based on the penetration depth of the semiconductor chip when the semiconductor chip supported by a pair of support members is pressed and curved by the pressing body and enters the recess of the support member, and on the presence or absence of cracks in the semiconductor chip that has entered the recess.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021138516A JP7708614B2 (en) | 2021-08-27 | 2021-08-27 | Strength evaluation jig |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021138516A JP7708614B2 (en) | 2021-08-27 | 2021-08-27 | Strength evaluation jig |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2023032399A JP2023032399A (en) | 2023-03-09 |
| JP7708614B2 true JP7708614B2 (en) | 2025-07-15 |
Family
ID=85416372
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021138516A Active JP7708614B2 (en) | 2021-08-27 | 2021-08-27 | Strength evaluation jig |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP7708614B2 (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020176891A (en) | 2019-04-17 | 2020-10-29 | 株式会社ディスコ | Test method and test equipment |
| JP2021048279A (en) | 2019-09-19 | 2021-03-25 | 株式会社ディスコ | Processing method of wafer and chip measuring apparatus |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0641913U (en) * | 1992-11-25 | 1994-06-03 | 三菱マテリアル株式会社 | Jig for bending test of plate material |
| JP3225683B2 (en) * | 1993-04-23 | 2001-11-05 | 株式会社明電舎 | 3-point bending test jig for minute brittle materials |
-
2021
- 2021-08-27 JP JP2021138516A patent/JP7708614B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020176891A (en) | 2019-04-17 | 2020-10-29 | 株式会社ディスコ | Test method and test equipment |
| JP2021048279A (en) | 2019-09-19 | 2021-03-25 | 株式会社ディスコ | Processing method of wafer and chip measuring apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2023032399A (en) | 2023-03-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10330702B2 (en) | Wafer level integrated circuit probe array and method of construction | |
| KR102852504B1 (en) | Probe card | |
| US10078101B2 (en) | Wafer level integrated circuit probe array and method of construction | |
| US20120158169A1 (en) | Closed-loop silicon etching control method and system | |
| US7188430B2 (en) | Continuously variable transmission belt inspection device | |
| JP7708614B2 (en) | Strength evaluation jig | |
| CN114252329A (en) | Bonding energy testing method of bonding technology | |
| CN101176003A (en) | Prober for wafer testing apparatus | |
| US8402670B2 (en) | Tensile bar marking fixture | |
| TWI727860B (en) | Wafer transverse impact test device and wafer strength test method | |
| JP2000106257A (en) | Semiconductor element inspection socket, semiconductor device, method of manufacturing semiconductor device, and method of inspecting semiconductor device | |
| CN110088592A (en) | Test jig and test method | |
| KR101670302B1 (en) | Integrated wafer measurement system and providing method thereof | |
| Köhler et al. | Weibull fracture probability for silicon wafer bond evaluation | |
| JP3942157B2 (en) | Bending method of work material | |
| KR100931154B1 (en) | Specimen for manufacturing composite moldability, the method of forming a specimen using the same and the evaluation method of the specimen formed by the same | |
| KR102695740B1 (en) | Chip breaking unit, method for comparing strength of chip | |
| KR200444615Y1 (en) | Residual thickness gauge after milling of airbag skin | |
| JP2021071343A (en) | Shear peeling test method, and shear peeling test jig | |
| JP3749082B2 (en) | Method and apparatus for measuring belt element for continuously variable transmission | |
| KR102921911B1 (en) | Jig for void inspection and manufacturing method of the same | |
| KR102560005B1 (en) | Jig for inspecting precision parts and inspection method using the same | |
| JP2025141269A (en) | Test device and test piece testing method | |
| KR20070117164A (en) | Device for fixing workpiece in tensile tester | |
| KR20230091492A (en) | guide device for vertical probe |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20240627 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20250313 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20250318 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20250327 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20250610 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20250703 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7708614 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |