JP7740832B2 - Processing device and processing method - Google Patents

Description

This disclosure relates to a processing device and a processing method.

The substrate grinding system described in Patent Document 1 includes a grinding device that grinds substrates, a first cleaning device that cleans the substrates after they have been ground by the grinding device, and a second transport device that transports the substrates from the grinding device to the first cleaning device. The grinding device grinds the top surface of the substrate. The first cleaning device scrubs and washes the ground top surface of the substrate W.

Registered Utility Model No. 3227448

One aspect of the present disclosure provides technology for keeping the cleaning section clean.

A processing apparatus according to one aspect of the present disclosure includes a processing unit that processes a substrate, a cleaning unit that cleans the substrate, and a waiting unit that temporarily waits the substrate, wet with a liquid supplied by the processing unit after processing in the processing unit, along a transport path of the substrate from the processing unit to the cleaning unit. The cleaning unit has a substrate holding unit that holds the substrate by contacting the center of the underside of the substrate. The waiting unit has a plurality of support pins that support the outer periphery of the substrate, and a liquid removal unit that removes the liquid from a region of the substrate supported by the plurality of support pins that contacts the substrate holding unit . The liquid removal unit has a gas ejection unit that ejects gas toward the region of the substrate.

According to one aspect of the present disclosure, the cleaning section can be kept clean.

FIG. 1 is a plan view showing a processing device according to an embodiment. FIG. 2 is a cross-sectional view taken along line II-II in FIG. FIG. 3 is a flowchart showing a processing method according to an embodiment. FIG. 4 is a cross-sectional view showing an example of the cleaning unit, and is a cross-sectional view showing an example of a state in which a substrate is held by a substrate holder. FIG. 5 is a cross-sectional view showing an example of the cleaning unit, showing an example of a state in which a substrate is held by a pair of suction pads. FIG. 6 is a cross-sectional view showing an example of a nozzle and a blow mechanism of the processing unit. FIG. 7 is a cross-sectional view showing an example of the waiting section.

Embodiments of the present disclosure will be described below with reference to the drawings. Note that identical or corresponding components in each drawing will be denoted by the same reference numerals, and descriptions thereof may be omitted. In this specification, the X-axis, Y-axis, and Z-axis directions are perpendicular to each other. The X-axis and Y-axis directions are horizontal directions, and the Z-axis direction is vertical.

First, with reference to Figures 1 and 2, a processing apparatus 1 according to one embodiment will be described. The processing apparatus 1 processes a substrate W and cleans the processed substrate W. The processing apparatus 1 includes, for example, a load/unload block 2, a cleaning block 3, and a processing block 5. The load/unload block 2, cleaning block 3, and processing block 5 are arranged in this order from the negative side of the X-axis to the positive side of the X-axis.

The load/unload block 2 includes a loading section 21 on which a cassette C is placed. The cassette C stores multiple substrates W. The substrates W include semiconductor substrates such as silicon wafers or compound semiconductor wafers. The substrates W may further include a device layer formed on the surface of the semiconductor substrate. The device layer includes, for example, electronic circuits. The substrates W may include glass substrates instead of semiconductor substrates.

The cleaning block 3 includes, for example, cleaning units 31A and 31B that clean the substrates W after processing, etching units 32A and 32B that etch the substrates W after cleaning, an inversion unit 34 that inverts the substrates W, and a transition unit 35 that relays the substrates W. The cleaning block 3 also includes a second transport unit 36 and a third transport unit 37.

When viewed from above, the second transport unit 36 and the third transport unit 37 are located diagonally across the rectangular cleaning block 3. The second transport unit 36 is adjacent to the processing block 5, but not adjacent to the load/unload block 2. In contrast, the third transport unit 37 is adjacent to the load/unload block 2, but not adjacent to the processing block 5.

The second transport unit 36 transports substrates W between multiple devices adjacent to the second transport unit 36. The second transport unit 36 has a transport arm that holds the substrates W. The transport arm is capable of moving horizontally (in both the X-axis and Y-axis directions) and vertically, and of rotating around a vertical axis.

The third transport unit 37 transports substrates W between multiple devices adjacent to the third transport unit 37. The third transport unit 37 has a transport arm that holds the substrates W. The transport arm is capable of moving horizontally (in both the X-axis and Y-axis directions) and vertically, and of rotating around a vertical axis.

The processing block 5 includes a processing unit 50 that processes the substrate W. The processing unit 50, for example, grinds the substrate W. Grinding includes polishing. The processing unit 50 includes, for example, four holders 52A, 52B, 52C, and 52D that hold the substrate W, and two tool drivers 53A and 53B that drive a tool D that is pressed against the substrate W. The tool drivers 53A and 53B rotate and raise and lower the tool D.

The processing unit 50 may further include a rotary table 51 that rotates around a rotation center line R1. The four holding units 52A-52D rotate together with the rotary table 51. The four holding units 52A-52D are spaced apart around the rotation center line R1 of the rotary table 51 and are simultaneously rotated around the rotation center line R1. The four holding units 52A-52D are independently rotated around their respective rotation center lines R2.

The two holders 52A, 52C are arranged symmetrically about the rotation center line R1 of the turntable 51. Each holder 52A, 52C moves between a first load/unload position A3, where the substrate W is loaded/unloaded by the first transport unit 54, and a first processing position A1, where the substrate W is processed by one tool drive unit 53A. The two holders 52A, 52C move between the first load/unload position A3 and the first processing position A1 every time the turntable 51 rotates 180°.

The other two holders 52B, 52D are arranged symmetrically about the rotation center line R1 of the turntable 51. Each holder 52B, 52D moves between a second load/unload position A0, where the substrate W is loaded and unloaded by the first transport unit 54, and a second processing position A2, where the substrate W is processed by another tool drive unit 53B. The other two holders 52B, 52D move between the second load/unload position A0 and the second processing position A2 every time the turntable 51 rotates 180°.

When viewed from above, the first loading/unloading position A3, the second loading/unloading position A0, the first processing position A1, and the second processing position A2 are arranged in this order in a counterclockwise direction. In this case, when viewed from above, the holding portions 52A, 52B, 52C, and 52D are arranged in this order at 90° intervals in a counterclockwise direction.

The positions of the first loading/unloading position A3 and the second loading/unloading position A0 may be reversed, and the positions of the first processing position A1 and the second processing position A2 may also be reversed. In other words, when viewed from above, the first loading/unloading position A3, the second loading/unloading position A0, the first processing position A1, and the second processing position A2 may be arranged in this order, clockwise. In this case, when viewed from above, the holding units 52A, 52B, 52C, and 52D are arranged in this order, clockwise at 90° intervals.

However, the number of holding units is not limited to four. The number of tool driving units is also not limited to two. In addition, the rotary table 51 does not have to be provided. A slide table may be provided instead of the rotary table 51.

The processing block 5 is equipped with a first transport unit 54 that transports the substrate W within the processing block 5. The first transport unit 54 includes a suction pad that holds the substrate W. The suction pad is capable of movement in the horizontal direction (both the X-axis and Y-axis directions) and the vertical direction, and of rotation around a vertical axis.

The processing block 5 includes waiting sections 57A, 57B, and 57C (see Figure 2) where substrates W are temporarily parked. The waiting sections 57A, 57B, and 57C relay substrates W between the first transport section 54 and the second transport section 36. The waiting sections 57A and 57B relay substrates W from the second transport section 36 to the first transport section 54. The waiting section 57C relays substrates W from the first transport section 54 to the second transport section 36.

The waiting sections 57A and 57B also serve as alignment sections that adjust the center position of the substrate W. The alignment sections use guides or the like to align the center position of the substrate W to the desired position. This allows the rotational center line R2 of each holder 52A to 52D to be aligned with the center of the substrate W when the first transport section 54 transfers the substrate W to each holder 52A to 52D.

The alignment unit may detect the center position of the substrate W using an optical system or the like. The alignment unit may also detect the crystal orientation of the substrate W using an optical system or the like, specifically, may detect a notch representing the crystal orientation of the substrate W. In a rotating coordinate system that rotates together with each of the holders 52A to 52D, the crystal orientation of the substrate W can be aligned to the desired orientation.

The processing block 5 may include an inversion section 58 (see Figure 2) that inverts the substrate W. The inversion section 58, waiting section 57C, waiting section 57B, and waiting section 57A are stacked from top to bottom in this order. Note that the stacking order is not particularly limited.

The reversing unit 58 doubles as a waiting unit where the substrate W temporarily waits along the transport path from the processing unit 50 to the cleaning unit 31A. The reversing unit 58 relays the substrate W from the first transport unit 54 to the second transport unit 36. Although the reversing unit 58 doubles as a waiting unit, the reversing unit 58 and the waiting unit may be provided separately.

The processing device 1 further includes a control unit 9. The control unit 9 is, for example, a computer, and includes a CPU (Central Processing Unit) 91 and a storage medium 92 such as a memory. The storage medium 92 stores programs that control the various processes executed by the processing device 1. The control unit 9 controls the operation of the processing device 1 by having the CPU 91 execute the programs stored in the storage medium 92.

Next, a processing method according to one embodiment will be described with reference to FIG. 3. The processing method includes, for example, steps S101 to S110 shown in FIG. 3. Steps S101 to S110 are performed under the control of the control unit 9. Note that the processing method does not have to include all of the steps shown in FIG. 3, and may include steps not shown in FIG. 3.

First, the third transport unit 37 removes the substrate W from the cassette C and transports it to the transition unit 35. Next, the second transport unit 36 removes the substrate W from the transition unit 35 and transports it to the standby unit 57A. The substrate W has first and second main surfaces facing opposite directions, and is transported with the first main surface facing upward.

Next, the standby unit 57A adjusts the center position of the substrate W (step S101). Thereafter, the first transport unit 54 removes the substrate W from the standby unit 57A and transports it to a holder (e.g., holder 52C) located at the first load/unload position A3. The substrate W is placed on the holder 52C with its first main surface facing upward. At this time, the center of the substrate W is aligned with the rotation center line R2 of the holder 52C. Thereafter, the turntable 51 is rotated 180°, and the holder 52C is moved from the first load/unload position A3 to the first processing position A1.

Next, the tool driving unit 53A drives the tool D to grind the first main surface of the substrate W (step S102). After that, the turntable 51 is rotated 180°, and the holder 52C is moved from the first processing position A1 to the first load/unload position A3. Next, the first transport unit 54 removes the substrate W from the holder 52C located at the first load/unload position A3 and transports it to the inversion unit 58.

Next, the inverting unit 58 inverts the substrate W (step S103). The substrate W is inverted upside down so that the first main surface faces downward and the second main surface faces upward. The second transport unit 36 then removes the substrate W from the inverting unit 58 and transports it to the cleaning unit 31A.

Next, the cleaning unit 31A cleans the first main surface of the substrate W (step S104). The cleaning unit 31A can remove particles such as processing debris. The cleaning unit 31A, for example, scrubs the substrate W. The cleaning unit 31A may clean not only the first main surface of the substrate W but also the second main surface. After the substrate W has been dried, the second transport unit 36 removes the substrate W from the cleaning unit 31A and transports it to the standby unit 57B.

Next, the standby unit 57B adjusts the center position of the substrate W (step S105). Thereafter, the first transport unit 54 removes the substrate W from the standby unit 57B and transports it to a holder (e.g., holder 52D) located at the second load/unload position A0. The substrate W is placed on the holder 52D with its second main surface facing upward. At this time, the center of the substrate W is aligned with the rotation center line R2 of the holder 52D. Thereafter, the turntable 51 is rotated 180°, and the holder 52C is moved from the second load/unload position A0 to the second processing position A2.

Next, the tool driving unit 53B drives the tool D to grind the second main surface of the substrate W (step S106). After that, the turntable 51 is rotated 180°, and the holder 52D is moved from the second processing position A2 to the second load/unload position A0. Next, the first transport unit 54 removes the substrate W from the holder 52D located at the second load/unload position A0 and transports it to the standby unit 57C. Then, the second transport unit 36 removes the substrate W from the standby unit 57C and transports it to the cleaning unit 31B.

Next, the cleaning unit 31B cleans the second main surface of the substrate W (step S107). The cleaning unit 31B can remove particles such as processing debris. The cleaning unit 31B, for example, scrubs the substrate W. The cleaning unit 31B may clean not only the second main surface of the substrate W but also the first main surface. After the substrate W has been dried, the third transport unit 37 removes the substrate W from the cleaning unit 31B and transports it to the etching unit 32B.

Next, the etching unit 32B etches the second main surface of the substrate W (step S108). The etching unit 32B can remove processing marks on the second main surface. After the substrate W is dried, the third transport unit 37 removes the substrate W from the etching unit 32B and transports it to the inversion unit 34.

Next, the inverting unit 34 inverts the substrate W (step S109). The substrate W is inverted upside down so that the first main surface faces upward and the second main surface faces downward. The third transport unit 37 then removes the substrate W from the inverting unit 34 and transports it to the etching unit 32A.

Next, the etching unit 32A etches the first main surface of the substrate W (step S110). The etching unit 32A can remove processing marks on the first main surface. After the substrate W is dried, the third transport unit 37 removes the substrate W from the etching unit 32A and stores it in a cassette C. This completes the current process.

In the explanation of Figure 3, the processing method was explained focusing on one substrate W. To improve throughput, the processing apparatus 1 may simultaneously perform multiple processes at multiple positions. For example, the processing apparatus 1 simultaneously processes the substrate W at each of the first processing position A1 and the second processing position A2. Meanwhile, the processing apparatus 1 performs, for example, spray cleaning of the substrate W, measuring the thickness distribution of the substrate W, unloading the substrate W, cleaning the substrate suction surface (upper surface) of the holder, and loading the substrate W, in this order, at each of the first load/unload position A3 and the second load/unload position A0.

Then, the processing device 1 rotates the turntable 51 by 180°. Next, the processing device 1 simultaneously processes the substrate W again at each of the first processing position A1 and the second processing position A2. Meanwhile, the processing device 1 again spray-cleans the substrate W, measures the thickness distribution of the substrate W, unloads the substrate W, cleans the substrate suction surface (upper surface) of the holder, and loads the substrate W, in this order, at each of the first load/unload position A3 and the second load/unload position A0.

Note that, although the processing unit 50 in this embodiment is a grinding unit that grinds the substrate W, the technology of the present disclosure is not limited to this. The processing unit 50 may also be a cutting unit that cuts the substrate W protected by a protective member, a cutting unit that mills the substrate W, or the like. When the processing unit 50 is a grinding unit, a grindstone or the like is used as the tool D. When the processing unit 50 is a cutting unit, a blade or the like is used as the tool D. When the processing unit 50 is a cutting unit, an end mill or the like is used as the tool D.

Next, an example of the cleaning unit 31B will be described with reference to Figures 4 and 5. Note that cleaning unit 31A has the same configuration as cleaning unit 31B, and therefore its description will be omitted. Cleaning unit 31B includes, for example, a substrate holder 311 that holds the substrate W, a rotation mechanism 312 that rotates the substrate holder 311, a ring cover 314 that surrounds the periphery of the substrate W, a friction unit 315 that contacts the substrate W, a movement unit 316 that moves the friction unit 315, a lower nozzle 317 that supplies cleaning liquid to the underside of the substrate W, and an upper nozzle 318 that supplies cleaning liquid to the upper surface of the substrate W.

The substrate holder 311 holds the substrate W horizontally, for example, from below. The substrate holder 311 adsorbs a first region of the substrate W. The first region is, for example, the center of the underside of the substrate W. The rotation mechanism 312 rotates the substrate holder 311 to rotate the substrate W.

The ring cover 314 prevents the scattering of cleaning liquid that is shaken off from the rotating substrate W. A pair of suction pads 313 (only one is shown in Figures 4 and 5) are provided inside the ring cover 314, sandwiching the substrate holder 311 in the Y-axis direction. The pair of suction pads 313 and the ring cover 314 are integrated and, for example, can move simultaneously in the X-axis and Z-axis directions, but cannot move in the Y-axis direction.

The friction unit 315 comes into contact with, for example, the underside of the substrate W and rubs against the underside of the substrate W. The friction unit 315 is a brush or a sponge. The friction unit 315 is rotated by the motor 319 and moved in the Y-axis direction by the moving unit 316.

As shown in Figure 4, when the substrate holder 311 is holding the first region of the underside of the substrate W by suction, the rotation mechanism 312 rotates the substrate W, and the movement unit 316 moves the friction unit 315 in the Y-axis direction. This scrubs and cleans the region outside the first region of the underside of the substrate W.

As shown in FIG. 5, when the pair of suction pads 313 are suctioning the underside of the substrate W, the pair of suction pads 313 and the ring cover 314 are moved in the X-axis direction by a drive unit (not shown), and the friction unit 315 is moved in the Y-axis direction by a moving unit 316. This scrubs and cleans the first area of the underside of the substrate W.

As shown in Figures 4 and 5, the substrate holder 311 and a pair of suction pads 313 hold the substrate W in sequence, allowing the friction unit 315 to scrub the entire lower surface of the substrate W. In this embodiment, the friction unit 315 is positioned below the substrate W, but it may also be positioned above the substrate W, or the upper surface of the substrate W may be scrubbed. The friction unit 315 may also be positioned on both the top and bottom of the substrate W.

Next, an example of the nozzle 61 and blow mechanism 62 of the processing unit 50 will be described with reference to Figure 6. The processing unit 50 has a nozzle 61 and a blow mechanism 62. At the first load/unload position A3 and the second load/unload position A0, the nozzle 61 supplies cleaning liquid to the upper surface of the processed substrate W before the substrate W is unloaded, and removes processing debris (e.g., grinding debris) adhering to the upper surface of the substrate W. The cleaning liquid is, for example, water.

When a substrate W is being transported from the first load/unload position A3 and the second load/unload position A0, the blow mechanism 62 sprays fluid from the suction surfaces of each holder 52A-52D that suction the substrate W. The pressure of the fluid spray can separate the substrate W from the suction surfaces. The fluid spray is controlled independently for each holder 52A-52D.

Each of the holders 52A to 52D includes, for example, a porous body 521 that vacuum-sucks the substrate W, a holder 522 that holds the porous body 521, and a flange 523 provided on the lower edge of the holder 522. The flange 523 is fixed to the rotating table 63 with bolts 64 or the like. The rotating table 63 rotates around the rotation center line R2.

The blow mechanism 62 supplies fluid to the porous body 521, causing the fluid to be ejected from the suction surface of the porous body 521 that suctions the substrate W. A liquid such as water is used as the fluid. A gas such as air may also be used as the fluid.

Liquid is supplied to the substrate W not only at the first load/unload position A3 and the second load/unload position A0, but also at the first processing position A1 and the second processing position A2. For example, the nozzle 65 (see FIG. 2) supplies liquid such as water to the top surface of the substrate W at the first processing position A1 and the second processing position A2 when the substrate W is processed.

The substrate W is transported from the processing unit 50 to the cleaning units 31A and 31B while wet with the liquid supplied by the processing unit 50. The substrate W is transported while wet with the liquid because if the substrate W dries before cleaning, processing debris will adhere firmly to the substrate W, making it difficult to remove the processing debris by cleaning.

When the substrates W are transported into the cleaning units 31A, 31B while wet with the liquid supplied by the processing unit 50, they bring liquid contaminated with processing debris into the cleaning units 31A, 31B. The liquid contaminated with processing debris adheres to the substrate holders 311 of the cleaning units 31A, 31B, contaminating the substrate holders 311. This then has an adverse effect on the substrates W held by the substrate holders 311.

As shown in FIG. 7, the waiting section 57C has a liquid removal section 70 that removes liquid from the first region of the substrate W. As described above, the waiting section 57C temporarily waits for the substrate W, which is wet with the liquid supplied by the processing section 50, along the transport path of the substrate W from the processing section 50 to the cleaning section 31B.

The standby section 57C has, for example, a plurality of support pins 571 that support the outer periphery of the substrate W, and a horizontal plate 572 on which the support pins 571 stand. The plurality of support pins 571 support the substrate W horizontally. A gap is formed between the substrate W and the horizontal plate 572, and at least part of the liquid removal section 70 is disposed in this gap.

The liquid removal unit 70 dries a first region of the substrate W. The first region of the substrate W is the region that comes into contact with the substrate holding unit 311 of the cleaning unit 31B. Drying the first region of the substrate W prevents liquid contaminated with processing debris from adhering to the substrate holding unit 311 of the cleaning unit 31B, thereby preventing the substrate holding unit 311 from becoming contaminated. This allows the cleaning unit 31B to be kept clean.

The first region of the substrate W is, for example, the center of the underside of the substrate W. The center of the underside of the substrate W is an area where processing debris hardly accumulates, compared to not only the upper surface of the substrate W but also the outer periphery of the lower surface of the substrate W, so there is no problem with drying it before cleaning. Note that the upper surface of the substrate W is processed, so processing debris is likely to accumulate, and processing debris that has wrapped around from the upper surface of the substrate W can accumulate on the outer periphery of the lower surface of the substrate W.

The liquid removal unit 70 only needs to remove liquid from a portion of the substrate W, and does not need to remove liquid from the entire substrate W. For example, the liquid removal unit 70 only needs to remove liquid from the center of the underside of the substrate W, and does not need to remove liquid from the periphery of the underside of the substrate W. This prevents processing debris from adhering firmly to the substrate W before cleaning, and allows the processing debris to be easily removed by cleaning.

The liquid removal unit 70 has, for example, a gas discharge unit 71 that discharges gas toward a first region of the substrate W. By adjusting the gas discharge direction and gas discharge flow rate, it is possible to adjust the region of the substrate W that the gas hits, and thereby adjust the region of the substrate W from which liquid is removed. The gas discharge unit 71 includes a nozzle 711 that discharges gas.

Nozzle 711 is, for example, vertically positioned and ejects gas directly upward. The ejected gas is, for example, air. The ejected gas may be any dry gas, and may also be an inert gas such as nitrogen gas. In this embodiment, there is one nozzle 711, but there may be multiple nozzles 711.

After the gas ejected from the nozzle 711 hits the center of the underside of the substrate W, it flows radially along the underside of the substrate W, gradually decelerating and gradually reaching atmospheric pressure. As a result, the Bernoulli effect comes into play in the gap between the nozzle 711 and the substrate W, generating negative pressure at the center of the underside of the substrate W, which then sucks the substrate W in. Therefore, the substrate W is stably supported.

The gas discharge unit 71 may discharge a cleaning liquid such as water before discharging the gas. The cleaning liquid and gas are discharged from the same nozzle 711. The first region of the substrate W can be cleaned with the cleaning liquid before being dried with the gas. This further prevents processing debris from adhering to the substrate holder 311 of the cleaning unit 31B.

The liquid removal unit 70 has a supply line 73 that supplies gas and cleaning liquid to the nozzle 711. The supply line 73 has a common line 731 and multiple branch lines 732 and 733. The common line 731 connects the nozzle 711 to the multiple branch lines 732 and 733. Note that the supply line 73 may supply only gas to the nozzle 711.

The branch line 732 connects the common line 731 and the gas supply source 74. An on-off valve 75 is provided midway along the branch line 732. When the on-off valve 75 opens the flow path of the branch line 732, the nozzle 711 ejects gas. When the on-off valve 75 closes the flow path of the branch line 732, the nozzle 711 stops ejecting gas.

The branch line 733 connects the common line 731 to the cleaning liquid supply source 76. An on-off valve 77 is provided midway along the branch line 733. When the on-off valve 77 opens the flow path of the branch line 733, the nozzle 711 ejects the cleaning liquid. When the on-off valve 77 closes the flow path of the branch line 733, the nozzle 711 stops ejecting the cleaning liquid.

The liquid removal unit 70 may also have an air volume amplifier 72 that amplifies the volume of air impinging on the substrate W by drawing gas around the gas discharge unit 71 into the flow of gas discharged by the gas discharge unit 71 using the Coanda effect. By using the air volume amplifier 72, a wide area of the substrate W can be dried with a small gas discharge flow rate. It is also possible to prevent the substrate W from floating up due to the gas discharge.

The air volume amplification section 72 has, for example, an annular portion 721 that surrounds the entire periphery of the gas discharge section 71. The annular portion 721 allows gas to be taken in from the entire periphery of the gas discharge section 71. The annular portion 721 preferably has a circular ring shape. It allows gas to be taken in evenly from the entire periphery centered on the gas discharge section 71. The annular portion 721 may also have a rectangular ring shape.

The gas discharge section 71 may protrude further toward the substrate W than the air volume amplifier section 72, for example, it may protrude higher than the air volume amplifier section 72. Specifically, the nozzle 711 of the gas discharge section 71 may protrude further toward the substrate W than the annular section 721 of the air volume amplifier section 72, for example, it may protrude higher than the annular section 721.

Since the nozzle 711 protrudes further toward the substrate W than the annular portion 721, the gas ejected from the nozzle 711 can easily pass between the annular portion 721 and the substrate W. This increases the flow rate of the gas that spreads radially along the underside of the substrate W. A large area of the substrate W can be dried with a small gas ejection flow rate. Furthermore, floating of the substrate W due to the ejection of gas can be suppressed.

The air volume amplifier 72 has an intake port 722 between the annular portion 721 and the horizontal plate 572 that takes in surrounding gas. The area of the intake port 722 is equal to, for example, the product of the height of the gap between the annular portion 721 and the horizontal plate 572 and the circumferential length of the annular portion 721.

The air volume amplifier 72 has an outlet 723 on the surface of the annular portion 721 facing the substrate W, which blows gas toward the substrate W. The area of the outlet 723 is, for example, the area of the opening formed on the surface of the annular portion 721 facing the substrate W.

The area of the intake port 722 may be larger than the area of the blowout port 723. This allows a large amount of gas to be taken in from around the air volume amplifier 72, further amplifying the amount of air blowing onto the substrate W.

The annular portion 721 may have a tapered surface 724 at the blow-out port 723 that widens toward the substrate W (e.g., upward). The gas flow can be smoothly bent along the tapered surface 724, preventing vortexes from occurring and preventing gas stagnation.

The annular portion 721 has an opening 725 on the surface (e.g., the bottom surface) facing away from the surface facing the substrate W. The annular portion 721 may have a tapered surface (not shown) at the opening 725 that widens toward the side opposite the substrate W (e.g., downward).

In this embodiment, the liquid removal unit 70 is provided in the standby unit 57C, which temporarily waits for the substrate W along the transport path of the substrate W from the processing unit 50 to the cleaning unit 31B. However, the liquid removal unit 70 may also be provided in a standby unit (e.g., the inversion unit 58), which temporarily waits for the substrate W along the transport path of the substrate W from the processing unit 50 to the cleaning unit 31A. As mentioned above, the inversion unit 58 and the standby unit may be provided separately.

The above describes embodiments of the processing device and processing method according to the present disclosure, but the present disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. Naturally, these also fall within the technical scope of the present disclosure.

1 Processing device 31B Cleaning section 311 Substrate holding section 50 Processing section 57C Standby section 70 Liquid removal section W Substrate

Claims (16)

a processing unit that processes the substrate;
a cleaning unit that cleans the substrate;
a waiting section that temporarily waits the substrate, wet with the liquid supplied by the processing section after processing in the processing section, along a transport path of the substrate from the processing section to the cleaning section;
Equipped with
the cleaning unit has a substrate holding unit that holds the substrate by contacting the center of the lower surface of the substrate,
the waiting unit includes a plurality of support pins that support an outer periphery of the substrate, and a liquid removal unit that removes the liquid from a region of the substrate supported by the plurality of support pins that contacts the substrate holding unit ,
The liquid removal unit includes a gas discharge unit that discharges gas toward the region of the substrate . a first transport unit that transports the substrate from the processing unit to the standby unit, and a second transport unit that transports the substrate from the standby unit to the cleaning unit,
The processing apparatus according to claim 1 , wherein the waiting section relays the substrate between the first transport section and the second transport section. The processing apparatus according to claim 1 , wherein the gas discharge unit supplies the cleaning liquid to the region of the substrate by discharging a cleaning liquid before discharging the gas toward the region of the substrate. 4. The processing apparatus according to claim 1, wherein the liquid removal unit has an air volume amplification unit that amplifies the air volume impinging on the substrate by drawing gas around the gas discharge unit into the flow of gas discharged by the gas discharge unit by the Coanda effect . The processing device according to claim 4 , wherein the air volume amplifying section has an annular section that surrounds the entire periphery of the gas discharge section. The processing device according to claim 4 or 5 , wherein the gas discharge portion protrudes further toward the substrate than the air volume amplifier portion. The processing device according to any one of claims 4 to 6 , wherein an inlet for taking in gas from said air volume amplifier has an area larger than an outlet for blowing out gas from said air volume amplifier. The processing apparatus according to claim 1 , wherein the liquid removal unit removes the liquid from only a portion of the substrate. A processing method comprising: processing a substrate in a processing unit; cleaning the substrate in a cleaning unit; and temporarily waiting the substrate, wet with a liquid supplied in the processing unit after processing in the processing unit, in a waiting unit midway along a transport path of the substrate from the processing unit to the cleaning unit ,
the cleaning unit has a substrate holding unit that holds the substrate by contacting the center of the lower surface of the substrate,
the waiting unit includes a plurality of support pins that support an outer periphery of the substrate, and a liquid removal unit that removes the liquid from a region of the substrate supported by the plurality of support pins that contacts the substrate holding unit,
the liquid removal unit has a gas ejection unit that ejects a gas toward the region of the substrate,
The processing method includes:
the gas ejection unit removes the liquid from the region of the substrate while the plurality of support pins hold the outer periphery of the substrate;
transporting the substrate from which the liquid has been removed from the region from the plurality of support pins to the substrate holding unit;
the substrate holding portion contacts the center of the lower surface of the substrate and holds the substrate;
The processing method has the following steps. 10. The processing method according to claim 9, comprising: transporting the substrate from the processing section to the waiting section by a first transport section; transporting the substrate from the waiting section to the cleaning section by a second transport section; and relaying the substrate between the first transport section and the second transport section by the waiting section. The processing method according to claim 9 or 10, wherein the standby unit supplies the cleaning liquid to the region of the substrate by discharging the cleaning liquid before the gas discharge unit discharges the gas toward the region of the substrate . 12. The processing method according to claim 9, wherein in the standby section, an airflow amplification section provided around the gas discharge section draws gas around the gas discharge section into the flow of gas discharged from the gas discharge section by the Coanda effect, thereby amplifying the airflow hitting the substrate. The processing method according to claim 12 , wherein the air volume amplifying section has an annular section that surrounds the entire periphery of the gas discharge section. The processing method according to claim 12 or 13 , wherein the gas discharge portion protrudes further toward the substrate than the air volume amplification portion. The processing method according to any one of claims 12 to 14 , wherein an inlet for taking in gas from the air volume amplifier has an area larger than an outlet for blowing out gas from the air volume amplifier. The processing method according to claim 9 , wherein the liquid is removed from only a portion of the substrate in the waiting section.