JP7756802B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

The present disclosure relates to a substrate processing apparatus and a substrate processing method.

The substrate grinding system described in Patent Document 1 includes a grinding device that grinds substrates and a cleaning device that cleans the substrates after they have been ground by the grinding device. The grinding device has a chuck that holds the substrates by suction. The substrates are ground while held by suction on the chuck.

Japanese Registered Utility Model No. 3227448

One aspect of the present disclosure provides a technology that supplies liquid inside a substrate suction portion such as a chuck, and reduces the amount of liquid remaining on the surface of the substrate facing the substrate suction portion after the substrate is removed from the substrate suction portion using the pressure of the liquid.

A substrate processing apparatus according to one aspect of the present disclosure includes a substrate suction unit that suctions a substrate, a supply unit that supplies fluid to the inside of the substrate suction unit, a suction unit that sucks fluid from the inside of the substrate suction unit, a first transport unit that holds the substrate from the side opposite the substrate suction unit, and a control unit that controls the supply unit, the suction unit, and the first transport unit. The control unit controls the first transport unit to hold the substrate suctioned by the substrate suction unit from the side opposite the substrate suction unit, supply liquid to the inside of the substrate suction unit, move the first transport unit a set distance to separate the substrate from the substrate suction unit a set distance, and, with the substrate separated from the substrate suction unit by the set distance, suck the liquid remaining between the substrate suction unit and the substrate into the inside of the substrate suction unit.

According to one aspect of the present disclosure, the amount of liquid remaining on the surface of the substrate facing the substrate suction portion can be reduced.

FIG. 1 is a plan view showing a substrate processing apparatus according to an embodiment. FIG. 2 is a cross-sectional view taken along line II-II in FIG. FIG. 3 is a flowchart illustrating a substrate processing method according to an embodiment. FIG. 4 is a cross-sectional view showing a substrate holding mechanism according to an embodiment. FIG. 5 is a flowchart showing an example of step S102. Figure 6(A) is a cross-sectional view showing an example of step S204, Figure 6(B) is a cross-sectional view showing an example of step S205, Figure 6(C) is a cross-sectional view showing an example of step S207, Figure 6(D) is a cross-sectional view showing an example of the first stage of step S208, and Figure 6(E) is a cross-sectional view showing an example of the second stage of step S208. FIG. 7 is a cross-sectional view showing an example of the cleaning unit, showing an example of a state in which a substrate is held by a substrate holder. FIG. 8 is a cross-sectional view showing an example of the cleaning unit, showing an example of a state in which a substrate is held by a pair of suction pads. FIG. 9 is a cross-sectional view showing an example of the waiting section.

Embodiments of the present disclosure will be described below with reference to the drawings. Note that identical or corresponding components in each drawing will be given the same reference numerals, and descriptions thereof may be omitted. In this specification, the X-axis, Y-axis, and Z-axis directions are perpendicular to each other. The X-axis and Y-axis directions are horizontal directions, and the Z-axis direction is vertical.

First, a substrate processing apparatus 1 according to one embodiment will be described with reference to Figures 1 and 2. The substrate processing apparatus 1 processes substrates W and cleans the processed substrates W. The substrate processing apparatus 1 includes, for example, a load/unload block 2, a cleaning block 3, and a processing block 5. The load/unload block 2, the cleaning block 3, and the processing block 5 are arranged in this order from the negative side of the X-axis to the positive side of the X-axis.

The load/unload block 2 includes a loading section 21 on which a cassette C is placed. The cassette C stores multiple substrates W. The substrates W include semiconductor substrates such as silicon wafers or compound semiconductor wafers. The substrates W may further include a device layer formed on the surface of the semiconductor substrate. The device layer includes, for example, electronic circuits. The substrates W may include a glass substrate instead of a semiconductor substrate.

The cleaning block 3 includes, for example, cleaning units 31A and 31B that clean the substrates W after processing, etching units 32A and 32B that etch the substrates W after cleaning, an inversion unit 34 that inverts the substrates W, and a transition unit 35 that relays the substrates W. The cleaning block 3 also includes a second transport unit 36 and a third transport unit 37.

When viewed from above, the second transport section 36 and the third transport section 37 are located diagonally across the rectangular cleaning block 3. The second transport section 36 is adjacent to the processing block 5, but not adjacent to the load/unload block 2. In contrast, the third transport section 37 is adjacent to the load/unload block 2, but not adjacent to the processing block 5.

The second transport unit 36 transports substrates W between multiple devices adjacent to the second transport unit 36. The second transport unit 36 has a transport arm that holds the substrates W. The transport arm is capable of moving horizontally (in both the X-axis and Y-axis directions) and vertically, and of rotating around a vertical axis.

The third transport unit 37 transports substrates W between multiple devices adjacent to the third transport unit 37. The third transport unit 37 has a transport arm that holds the substrates W. The transport arm is capable of moving horizontally (in both the X-axis and Y-axis directions) and vertically, and of rotating around a vertical axis.

The processing block 5 includes a processing unit 50 that processes the substrate W. The processing unit 50, for example, grinds the substrate W. Grinding includes polishing. The processing unit 50 includes, for example, four holding units 52A, 52B, 52C, and 52D that hold the substrate W, and two tool driving units 53A and 53B that drive a tool D that is pressed against the substrate W. The tool driving units 53A and 53B rotate and raise and lower the tool D.

The processing unit 50 may further include a rotary table 51 that is rotated around a rotation center line R1. The four holding units 52A to 52D are rotated together with the rotary table 51. The four holding units 52A to 52D are spaced apart around the rotation center line R1 of the rotary table 51 and are simultaneously rotated around the rotation center line R1. The four holding units 52A to 52D are independently rotated around their respective rotation center lines R2.

The two holders 52A, 52C are arranged symmetrically about the rotation center line R1 of the turntable 51. Each holder 52A, 52C moves between a first load/unload position A3, where the substrate W is loaded and unloaded by the first transport unit 54, and a first processing position A1, where the substrate W is processed by one tool drive unit 53A. The two holders 52A, 52C move between the first load/unload position A3 and the first processing position A1 every time the turntable 51 rotates 180°. At the first processing position A1, a nozzle 59 (see Figure 2) supplies a processing liquid such as water to the top surface of the substrate W when the substrate W is processed.

The other two holding units 52B, 52D are arranged symmetrically around the rotation center line R1 of the turntable 51. Each holding unit 52B, 52D moves between a second loading/unloading position A0, where the substrate W is loaded and unloaded by the first transport unit 54, and a second processing position A2, where the substrate W is processed by another tool driving unit 53B. The other two holding units 52B, 52D move between the second loading/unloading position A0 and the second processing position A2 every time the turntable 51 rotates 180 degrees. At the second processing position A2, a nozzle (not shown) supplies a processing liquid such as water to the top surface of the substrate W when the substrate W is processed.

When viewed from above, the first loading/unloading position A3, the second loading/unloading position A0, the first processing position A1, and the second processing position A2 are arranged in this order counterclockwise. In this case, when viewed from above, the holding portions 52A, 52B, 52C, and 52D are arranged in this order counterclockwise at 90° intervals.

The positions of the first loading/unloading position A3 and the second loading/unloading position A0 may be reversed, and the positions of the first processing position A1 and the second processing position A2 may also be reversed. In other words, when viewed from above, the first loading/unloading position A3, the second loading/unloading position A0, the first processing position A1, and the second processing position A2 may be arranged in this order, clockwise. In this case, when viewed from above, the holding portions 52A, 52B, 52C, and 52D are arranged in this order, clockwise at 90° intervals.

However, the number of holding units is not limited to four. The number of tool driving units is also not limited to two. In addition, the rotary table 51 does not have to be provided. A slide table may be provided instead of the rotary table 51.

The processing block 5 is equipped with a first transport unit 54 that transports the substrate W inside the processing block 5. The first transport unit 54 includes a suction pad that holds the substrate W. The suction pad is capable of movement in the horizontal direction (both the X-axis and Y-axis directions) and the vertical direction, and of rotation around a vertical axis.

The processing block 5 includes waiting sections 57A, 57B, and 57C (see Figure 2) where substrates W are temporarily parked. The waiting sections 57A, 57B, and 57C relay substrates W between the first transport section 54 and the second transport section 36. The waiting sections 57A and 57B relay substrates W from the second transport section 36 to the first transport section 54. The waiting section 57C relays substrates W from the first transport section 54 to the second transport section 36.

The waiting sections 57A and 57B also serve as alignment sections that adjust the center position of the substrate W. The alignment sections use guides or the like to align the center position of the substrate W to the desired position. This allows the rotation center line R2 of each holder 52A to 52D to be aligned with the center of the substrate W when the first transport section 54 transfers the substrate W to each holder 52A to 52D.

The alignment unit may detect the center position of the substrate W using an optical system or the like. The alignment unit may also detect the crystal orientation of the substrate W using an optical system or the like, specifically, may detect a notch that represents the crystal orientation of the substrate W. In a rotating coordinate system that rotates together with each of the holders 52A to 52D, the crystal orientation of the substrate W can be aligned to the desired orientation.

The processing block 5 may include an inversion section 58 (see Figure 2) that inverts the substrate W. The inversion section 58, waiting section 57C, waiting section 57B, and waiting section 57A are stacked from top to bottom in this order. Note that the stacking order is not particularly limited.

The reversing unit 58 also serves as a waiting unit where the substrate W temporarily waits along the transport path of the substrate W from the processing unit 50 to the cleaning unit 31A. The reversing unit 58 relays the substrate W from the first transport unit 54 to the second transport unit 36. Although the reversing unit 58 also serves as a waiting unit, the reversing unit 58 and the waiting unit may be provided separately.

The substrate processing apparatus 1 further includes a control unit 9. The control unit 9 is, for example, a computer, and includes an arithmetic unit 91 such as a CPU (Central Processing Unit), and a storage unit 92 such as a memory. The storage unit 92 stores programs that control the various processes performed in the substrate processing apparatus 1. The control unit 9 controls the operation of the substrate processing apparatus 1 by having the arithmetic unit 91 execute the programs stored in the storage unit 92. A unit control unit may be provided for each unit that makes up the substrate processing apparatus 1, and a system control unit may be provided that performs overall control of multiple unit control units. The control unit 9 may be composed of the unit control units and the system control unit.

Next, a substrate processing method according to one embodiment will be described with reference to Figure 3. The substrate processing method includes, for example, steps S101 to S110 shown in Figure 3. Steps S101 to S110 are performed under the control of the control unit 9. Note that the substrate processing method does not have to include all of the steps shown in Figure 3, and may include steps not shown in Figure 3.

First, the third transport unit 37 removes the substrate W from the cassette C and transports it to the transition unit 35. Next, the second transport unit 36 removes the substrate W from the transition unit 35 and transports it to the waiting unit 57A. The substrate W has a first main surface and a second main surface facing oppositely, and is transported with the first main surface facing upward.

Next, the standby unit 57A adjusts the center position of the substrate W (step S101). Thereafter, the first transport unit 54 removes the substrate W from the standby unit 57A and transports it to a holder (e.g., holder 52C) located at the first load/unload position A3. The substrate W is placed on the holder 52C with its first main surface facing upward. At this time, the center of the substrate W is aligned with the rotation center line R2 of the holder 52C. Thereafter, the turntable 51 is rotated 180°, and the holder 52C is moved from the first load/unload position A3 to the first processing position A1.

Next, the tool driving unit 53A drives the tool D to grind the first main surface of the substrate W (step S102). After that, the turntable 51 is rotated 180°, and the holder 52C is moved from the first processing position A1 to the first load/unload position A3. Next, the first transport unit 54 removes the substrate W from the holder 52C located at the first load/unload position A3 and transports it to the inversion unit 58.

Next, the inversion unit 58 inverts the substrate W (step S103). The substrate W is inverted upside down so that the first main surface faces downward and the second main surface faces upward. The second transport unit 36 then removes the substrate W from the inversion unit 58 and transports it to the cleaning unit 31A.

Next, the cleaning unit 31A cleans the first main surface of the substrate W (step S104). The cleaning unit 31A can remove particles such as processing debris. The cleaning unit 31A, for example, scrubs the substrate W. The cleaning unit 31A may clean not only the first main surface of the substrate W but also the second main surface. After the substrate W has been dried, the second transport unit 36 removes the substrate W from the cleaning unit 31A and transports it to the standby unit 57B.

Next, the waiting section 57B adjusts the center position of the substrate W (step S105). Thereafter, the first transport section 54 removes the substrate W from the waiting section 57B and transports it to a holder (e.g., holder 52D) located at the second load/unload position A0. The substrate W is placed on the holder 52D with its second main surface facing upward. At this time, the center of the substrate W is aligned with the rotation center line R2 of the holder 52D. Thereafter, the turntable 51 is rotated 180°, and the holder 52D is moved from the second load/unload position A0 to the second processing position A2.

Next, the tool driving unit 53B drives the tool D to grind the second main surface of the substrate W (step S106). After that, the turntable 51 is rotated 180°, and the holding unit 52D is moved from the second processing position A2 to the second load/unload position A0. Next, the first transport unit 54 removes the substrate W from the holding unit 52D located at the second load/unload position A0 and transports it to the standby unit 57C. Then, the second transport unit 36 removes the substrate W from the standby unit 57C and transports it to the cleaning unit 31B.

Next, the cleaning unit 31B cleans the second main surface of the substrate W (step S107). The cleaning unit 31B can remove particles such as processing debris. The cleaning unit 31B, for example, scrubs the substrate W. The cleaning unit 31B may clean not only the second main surface of the substrate W but also the first main surface. After the substrate W is dried, the third transport unit 37 removes the substrate W from the cleaning unit 31B and transports it to the etching unit 32B.

Next, the etching unit 32B etches the second main surface of the substrate W (step S108). The etching unit 32B can remove processing marks on the second main surface. After the substrate W is dried, the third transport unit 37 removes the substrate W from the etching unit 32B and transports it to the inversion unit 34.

Next, the inversion unit 34 inverts the substrate W (step S109). The substrate W is inverted upside down so that the first main surface faces upward and the second main surface faces downward. The third transport unit 37 then removes the substrate W from the inversion unit 34 and transports it to the etching unit 32A.

Next, the etching unit 32A etches the first main surface of the substrate W (step S110). The etching unit 32A can remove processing marks on the first main surface. After the substrate W is dried, the third transport unit 37 removes the substrate W from the etching unit 32A and stores it in the cassette C. This completes the current process.

In the explanation of Figure 3, the substrate processing method was described focusing on one substrate W. The substrate processing apparatus 1 may perform multiple processes simultaneously at multiple positions to improve throughput. For example, the substrate processing apparatus 1 processes the substrate W simultaneously at each of the first processing position A1 and the second processing position A2. Meanwhile, the substrate processing apparatus 1 performs, for example, spray cleaning of the substrate W, measuring the thickness distribution of the substrate W, unloading the substrate W, cleaning the substrate suction surface (upper surface) of the holder, and loading the substrate W, in this order, at each of the first load/unload position A3 and the second load/unload position A0.

The substrate processing apparatus 1 then rotates the turntable 51 by 180°. The substrate processing apparatus 1 then simultaneously processes the substrate W again at each of the first processing position A1 and the second processing position A2. Meanwhile, the substrate processing apparatus 1 again spray-cleans the substrate W, measures the thickness distribution of the substrate W, unloads the substrate W, cleans the substrate suction surface (upper surface) of the holder, and loads the substrate W, in this order, at each of the first load/unload position A3 and the second load/unload position A0.

Note that, although the processing unit 50 in this embodiment is a grinding unit that grinds the substrate W, the technology of the present disclosure is not limited to this. The processing unit 50 may also be a cutting unit that cuts the substrate W protected by a protective member, a cutting unit that mills the substrate W, etc. When the processing unit 50 is a grinding unit, a grindstone or the like is used as the tool D. When the processing unit 50 is a cutting unit, a blade or the like is used as the tool D. When the processing unit 50 is a cutting unit, an end mill or the like is used as the tool D.

Next, a substrate holding mechanism 60 according to one embodiment will be described with reference to Figures 4 to 6. The substrate holding mechanism 60 is used in the processing unit 50. As shown in Figure 4, the substrate holding mechanism 60 includes, for example, a substrate adsorption unit 61, a suction unit 62, and a supply unit 63.

The substrate suction unit 61 suctions the substrate W. The substrate suction unit 61 is, for example, a vacuum chuck, and has a porous body 611 that vacuum-suctions the substrate W, and a holder 612 that holds the porous body 611. The porous body 611 has an adsorption surface that adsorbs the substrate W. The substrate suction unit 61 is not particularly limited, but may be used, for example, as holders 52A to 52D shown in Figure 1.

The suction unit 62 sucks fluid from inside the substrate suction unit 61. The suction unit 62 includes a valve that switches between suction and stopping of fluid suction under the control of the control unit 9. The valve is connected to a suction source for the fluid. The suction unit 62 does not include a suction source, but may include a suction source. If there are multiple types of fluid, a valve may be provided for each type of fluid, or a common valve may be provided.

The suction unit 62 sucks gas from, for example, the inside of the porous body 611. As a result, the pressure in the porous body 611 is reduced below atmospheric pressure, and the porous body 611 vacuum-adsorbs the substrate W. After that, the suction unit 62 stops sucking gas, and when the pressure in the porous body 611 returns to atmospheric pressure, the vacuum adsorption force disappears.

The substrate adsorption unit 61 is not limited to a vacuum chuck and may be, for example, an electrostatic chuck. The electrostatic chuck has an insulating substrate and an electrode (not shown). An electrostatic adsorption force is generated when a charge supply unit (not shown) supplies charge to the electrode. Furthermore, the electrostatic adsorption force disappears when a charge discharge unit (not shown) discharges charge from the electrode.

When processing the substrate W, the substrate W is adsorbed to the substrate suction portion 61. When processing the substrate W, a processing liquid such as water is supplied to the substrate W for purposes such as reducing frictional resistance, cooling, and preventing the adhesion of processing debris. The processing liquid penetrates between the substrate suction portion 61 and the substrate W.

The supply unit 63 supplies fluid to the inside of the substrate suction unit 61. The supply unit 63 includes a valve that switches the supply of fluid on and off under the control of the control unit 9. The valve is connected to a fluid supply source. The supply unit 63 does not include a supply source, but may include a supply source. If there are multiple types of fluid, an on-off valve may be provided for each type of fluid, or a common valve may be provided.

After processing the substrate W, the supply unit 63 supplies liquid L into the substrate suction unit 61 and pushes the substrate W with the pressure of the liquid L to remove the substrate W (see Figures 6(B) and 6(C)). The liquid L is, for example, water. The supply unit 63 may supply a mixed fluid of liquid L and gas into the substrate suction unit 61 and push the substrate W with the pressure of the mixed fluid. The gas is, for example, air.

The supply unit 63 supplies liquid L, for example, into the porous body 611, and pushes the substrate W with the pressure of the liquid L. If the substrate attraction unit 61 is an electrostatic chuck, multiple holes may be formed in the attraction surface of the electrostatic chuck, and the supply unit 63 may supply liquid L to the holes. In either case, the pressure of the liquid L can push the substrate W.

The substrate W is peeled off from the substrate suction portion 61 by the pressure of the liquid L and transferred from the substrate suction portion 61 to the first transport portion 54. Utilizing the pressure of the liquid L is particularly effective when grinding the substrate W. When grinding the substrate W, the tool D presses the substrate W against the substrate suction portion 61. As a result, the substrate W is tightly attached to the substrate suction portion 61.

The suction unit 62 sucks the liquid L remaining between the substrate suction unit 61 and the substrate W into the inside of the substrate suction unit 61 (see Figures 6(D) and 6(E)). This reduces the amount of liquid L remaining on the substrate W after the substrate W is pressed by the pressure of the liquid L to remove it from the substrate suction unit 61. This prevents the liquid L from splashing inside the substrate processing apparatus 1 when the substrate W is subsequently transported.

In order to reduce the amount of liquid L remaining on the substrate W, it is also possible to use a sponge roller or the like instead of the suction unit 62. The sponge roller is provided, for example, next to the substrate suction unit 61, and removes liquid L remaining on the substrate W along the transport path of the substrate W. According to this embodiment, since the liquid L is removed from the substrate W above the substrate suction unit 61, there is no need to reserve a dedicated space along the transport path of the substrate W. Furthermore, according to this embodiment, the effort of cleaning the sponge roller can be eliminated.

Next, an example of step S102 in FIG. 3 will be described with reference to FIGS. 5 and 6. Step S106 in FIG. 3 is performed in the same manner as step S102, and therefore description thereof will be omitted. Step S102 includes, for example, steps S201 to S209, as shown in FIG. 5. Steps S201 to S209 are performed under the control of the control unit 9.

First, the first transport unit 54 transports the substrate W into the processing unit 50 (step S201). Next, the substrate suction unit 61 in the processing unit 50 adsorbs the substrate W (step S202). After that, the first transport unit 54 exits the processing unit 50. With the substrate suction unit 61 adsorbing the substrate W, the processing unit 50 processes the substrate W (step S203).

Next, the first transport unit 54 enters the processing unit 50 and is placed on the substrate W as shown in FIG. 6(A). The first transport unit 54 then holds the substrate W from the opposite side (e.g., the upper side) from the substrate suction unit 61 (step S204). The first transport unit 54 has, for example, a suction pad 54a that suctions the substrate W. The suction pad 54a only needs to suction the center of the top surface of the substrate W, and does not need to suction the outer periphery of the top surface of the substrate W.

The substrate suction portion 61 suctions the substrate W to prevent the substrate W from shifting when the first transport unit 54 suctions the substrate W. Both the substrate suction portion 61 and the first transport unit 54 suction the substrate W. Then, the suction portion 62 stops suctioning the gas, and the substrate suction portion 61 stops suctioning the substrate W. Then, only the first transport unit 54 suctions the substrate W. Note that the first transport unit 54 may hold the substrate W with a mechanical chuck instead of the suction pad 54a.

Next, as shown in FIG. 6(B), the supply unit 63 supplies liquid L into the substrate suction unit 61, and the pressure of the liquid L pushes the substrate W upward (step S205). At this time, the first transport unit 54 presses the substrate W from the side opposite the substrate suction unit 61 to prevent the substrate W from being blown away. The liquid L leaks out sideways from between the substrate suction unit 61 and the substrate W.

Next, the control unit 9 determines whether the substrate W is being held by the first transport unit 54 (step S206). For example, when the first transport unit 54 vacuum-sucks the substrate W, the pressure sensor 82 detects a pressure that represents the vacuum suction force. The control unit 9 makes a determination based on the detection value of the pressure sensor 82. If the substrate W is vacuum-sucked to the first transport unit 54 and there is no vacuum leak, the pressure will be below the threshold value.

If it is determined in step S206 that the substrate W is not being held by the first transport section 54, then, for example, the processing from step S204 onwards is performed again. Alternatively, the processing of the substrate W may be interrupted and maintenance of the substrate processing apparatus 1 may be performed.

If it is determined in step S206 that the substrate W is being held by the first transport unit 54, the first transport unit 54 is raised as shown in FIG. 6(C). As a result, the substrate W is moved away from the substrate suction unit 61 (step S207). A gap is formed between the substrate suction unit 61 and the substrate W. The size of the gap is equal to the amount of lift of the substrate W. The greater the amount of lift of the substrate W, the larger the size of the gap.

By step S208, which will be described later, the substrate W has been raised a set distance D0, and the substrate W is separated from the substrate suction portion 61 by the set distance D0. In this state, the space between the substrate W and the substrate suction portion 61 is filled with a film of liquid L. The set distance D0 is determined taking into consideration factors such as the suction time of the liquid L in step S208. The larger the set distance D0, the greater the remaining amount of liquid L, the longer the suction time of the liquid L, and the lower the throughput. However, if the set distance D0 is too small, there is a risk that the substrate W will come into contact with the substrate suction portion 61 due to the suction force.

Next, with the substrate W spaced a set distance D0 from the substrate suction unit 61, the supply unit 63 stops supplying the liquid L, and the suction unit 62 sucks the liquid L, as shown in Figures 6(D) and 6(E) (step S208). Because the substrate W is held by the first transport unit 54, the cessation of the supply of the liquid L or the suction does not cause the substrate W to fall.

The suction unit 62 sucks the liquid L remaining between the substrate suction unit 61 and the substrate W into the inside of the substrate suction unit 61. This reduces the amount of liquid L remaining on the substrate W. This prevents the liquid L from scattering during subsequent transport of the substrate W, and keeps the inside of the substrate processing apparatus 1 clean. As shown in Figure 6(E), a small amount of liquid L may remain on the substrate W.

As shown in Figure 6 (D), the film of liquid L is drawn from the radially outer side to the radially inner side of the substrate W while in contact with both the substrate W and the substrate suction portion 61. The diameter of the film of liquid L on the suction surface of the substrate suction portion 61 decreases over time. During this time, the size of the gap between the substrate suction portion 61 and the substrate W remains constant. The phenomenon in which the diameter of the film of liquid L gradually decreases is thought to occur when the suction surface of the substrate suction portion 61 is formed of a porous material 611.

Finally, the first transport unit 54 moves horizontally while holding the substrate W, exits the processing unit 50, and transports the substrate W out of the processing unit 50 (step S209).

Note that the substrate processing method does not have to include all of the steps shown in FIG. 5, and may include steps not shown in FIG. 5. For example, the substrate processing method may include an unillustrated step of cleaning the substrate suction portion 61 and the substrate W after the start of step S207 and before the start of step S208. This step is hereinafter referred to as the cleaning step.

The cleaning step involves rotating the substrate suction portion 61 while supplying liquid L into the inside of the substrate suction portion 61. By rotating the substrate suction portion 61, the cleaning step is performed after the substrate W has been released from the substrate suction portion 61 so that the substrate suction portion 61 and the substrate W do not rub against each other. Therefore, the cleaning step is performed after the start of step S207.

In the cleaning step, only liquid L may be supplied into the substrate suction portion 61, or a mixed fluid of liquid L and gas may be supplied into the substrate suction portion 61. The size of the gap formed between the substrate suction portion 61 and the substrate W in the cleaning step may be larger, smaller, or the same as the size of the gap D0 formed in step S208.

As described above, the cleaning step involves rotating the substrate suction portion 61 while supplying liquid L into the interior of the substrate suction portion 61. The liquid L flows from the radially inner side to the radially outer side of the substrate W due to centrifugal force while contacting both the substrate suction portion 61 and the substrate W. This allows the substrate suction portion 61 and the substrate W to be cleaned. After the cleaning step, step S208 is performed.

In step S208, the substrate suction portion 61 may be rotated, but it is preferable not to rotate the substrate suction portion 61. In the latter case, the generation of centrifugal force can be prevented. If centrifugal force is not generated, the liquid L is likely to be drawn from the radially outer side of the substrate W to the radially inner side while in contact with both the substrate W and the substrate suction portion 61.

7 and 8, an example of the cleaning unit 31B will be described. Note that the cleaning unit 31A has the same configuration as the cleaning unit 31B, and therefore its description will be omitted. The cleaning unit 31B includes, for example, a substrate holder 311 that holds the substrate W, a rotation mechanism 312 that rotates the substrate holder 311, a ring cover 314 that surrounds the periphery of the substrate W, a friction unit 315 that contacts the substrate W, a moving unit 316 that moves the friction unit 315, a lower nozzle 317 that supplies cleaning liquid to the underside of the substrate W, and an upper nozzle 318 that supplies cleaning liquid to the upper surface of the substrate W.

The substrate holder 311 holds the substrate W horizontally, for example, from below. The substrate holder 311 adsorbs a first region of the substrate W. The first region is, for example, the center of the underside of the substrate W. The rotation mechanism 312 rotates the substrate W by rotating the substrate holder 311.

The ring cover 314 prevents the scattering of cleaning liquid that is shaken off from the rotating substrate W. A pair of suction pads 313 (only one is shown in Figures 7 and 8) are provided inside the ring cover 314, sandwiching the substrate holder 311 in the Y-axis direction. The pair of suction pads 313 and the ring cover 314 are integrated and, for example, can move simultaneously in the X-axis and Z-axis directions, but cannot move in the Y-axis direction.

The friction unit 315 comes into contact with, for example, the underside of the substrate W and rubs the underside of the substrate W. The friction unit 315 is a brush or a sponge. The friction unit 315 is rotated by the motor 319 and moved in the Y-axis direction by the moving unit 316.

As shown in Figure 7, when the substrate holder 311 is adsorbing the first region on the underside of the substrate W, the rotation mechanism 312 rotates the substrate W, and the movement unit 316 moves the friction unit 315 in the Y-axis direction. This scrubs and cleans the region outside the first region on the underside of the substrate W.

As shown in Figure 8, when the pair of suction pads 313 are suctioning the underside of the substrate W, the pair of suction pads 313 and the ring cover 314 are moved in the X-axis direction by a drive unit (not shown), and the friction unit 315 is moved in the Y-axis direction by a moving unit 316. This scrubs and cleans the first area of the underside of the substrate W.

As shown in Figures 7 and 8, the substrate holder 311 and a pair of suction pads 313 hold the substrate W in sequence, allowing the friction unit 315 to scrub the entire lower surface of the substrate W. In this embodiment, the friction unit 315 is positioned below the substrate W, but it may also be positioned above the substrate W, and the upper surface of the substrate W may be scrubbed. The friction unit 315 may also be positioned on both the top and bottom sides of the substrate W.

The substrates W are transported from the processing unit 50 to the cleaning units 31A and 31B while wet with the liquid supplied by the processing unit 50. The reason for transporting the substrates W while wet with the liquid is that if the substrates W dry before cleaning, processing debris will adhere firmly to the substrates W, making it difficult to remove the processing debris by cleaning.

When the substrates W are transported into the cleaning units 31A and 31B while wet with the liquid supplied by the processing unit 50, they bring liquid contaminated with processing debris into the cleaning units 31A and 31B. The liquid contaminated with processing debris adheres to the substrate holding units 311 of the cleaning units 31A and 31B, contaminating the substrate holding units 311. This then has an adverse effect on the substrates W held by the substrate holding units 311.

As shown in Figure 9, the waiting section 57C has a liquid removal section 70 that removes liquid from the first region of the substrate W. As described above, the waiting section 57C temporarily waits for the substrate W, which is wet with the liquid supplied by the processing section 50, along the transport path of the substrate W from the processing section 50 to the cleaning section 31B.

The waiting section 57C has, for example, a plurality of support pins 571 that support the outer periphery of the substrate W, and a horizontal plate 572 on which the support pins 571 are erected. The plurality of support pins 571 support the substrate W horizontally. A gap is formed between the substrate W and the horizontal plate 572, and at least a part of the liquid removal section 70 is disposed in the gap.

The liquid removal unit 70 dries a first region of the substrate W. The first region of the substrate W is the region that comes into contact with the substrate holding unit 311 of the cleaning unit 31B. Drying the first region of the substrate W prevents liquid contaminated with processing debris from adhering to the substrate holding unit 311 of the cleaning unit 31B, thereby preventing the substrate holding unit 311 from becoming contaminated. This allows the cleaning unit 31B to be kept clean.

The first region of the substrate W is, for example, the center of the underside of the substrate W. The center of the underside of the substrate W is an area where processing debris hardly accumulates, compared to not only the upper surface of the substrate W but also the outer periphery of the lower surface of the substrate W, so there is no problem with drying it before cleaning. Note that the upper surface of the substrate W is processed, so processing debris is likely to accumulate, while the outer periphery of the lower surface of the substrate W may accumulate processing debris that has wrapped around from the upper surface of the substrate W.

The liquid removal unit 70 only needs to remove liquid from a portion of the substrate W, and does not need to remove liquid from the entire substrate W. For example, the liquid removal unit 70 only needs to remove liquid from the center of the underside of the substrate W, and does not need to remove liquid from the periphery of the underside of the substrate W. This prevents processing debris from firmly adhering to the substrate W before cleaning, and allows the processing debris to be easily removed by cleaning.

The liquid removal unit 70 has, for example, a gas discharge unit 71 that discharges gas toward a first region of the substrate W. By adjusting the gas discharge direction and gas discharge flow rate, it is possible to adjust the region of the substrate W where the gas hits, and thereby adjust the region of the substrate W from which liquid is removed. The gas discharge unit 71 includes a nozzle 711 that discharges gas.

Nozzle 711 is, for example, vertically positioned and ejects gas directly upward. The ejected gas is, for example, air. The ejected gas may be any dry gas, and may also be an inert gas such as nitrogen gas. In this embodiment, there is one nozzle 711, but there may be multiple nozzles 711.

After hitting the center of the underside of the substrate W, the gas ejected from the nozzle 711 flows radially along the underside of the substrate W, gradually decelerating and gradually reaching atmospheric pressure. As a result, the Bernoulli effect operates in the gap between the nozzle 711 and the substrate W, generating negative pressure at the center of the underside of the substrate W, which then sucks the substrate W in. Therefore, the substrate W is stably supported.

The gas discharge unit 71 may discharge a cleaning liquid such as water before discharging the gas. The cleaning liquid and gas are discharged from the same nozzle 711. The first region of the substrate W can be cleaned with the cleaning liquid before being dried with the gas. This further prevents processing debris from adhering to the substrate holding unit 311 of the cleaning unit 31B.

The liquid removal unit 70 has a supply line 73 that supplies gas and cleaning liquid to the nozzle 711. The supply line 73 has a common line 731 and multiple branch lines 732 and 733. The common line 731 connects the nozzle 711 to the multiple branch lines 732 and 733. Note that the supply line 73 may supply only gas to the nozzle 711.

The branch line 732 connects the common line 731 to the gas supply source 74. An on-off valve 75 is provided midway along the branch line 732. When the on-off valve 75 opens the flow path of the branch line 732, the nozzle 711 ejects gas. When the on-off valve 75 closes the flow path of the branch line 732, the nozzle 711 stops ejecting gas.

The branch line 733 connects the common line 731 to the cleaning liquid supply source 76. An on-off valve 77 is provided midway along the branch line 733. When the on-off valve 77 opens the flow path of the branch line 733, the nozzle 711 ejects the cleaning liquid. When the on-off valve 77 closes the flow path of the branch line 733, the nozzle 711 stops ejecting the cleaning liquid.

The liquid removal unit 70 may have an air volume amplifier 72 that amplifies the volume of air hitting the substrate W by drawing gas around the gas discharge unit 71 into the flow of gas discharged by the gas discharge unit 71 using the Coanda effect. By using the air volume amplifier 72, a wide area of the substrate W can be dried with a small gas discharge flow rate. Furthermore, floating of the substrate W due to the gas discharge can be suppressed.

The air volume amplification section 72 has, for example, an annular portion 721 that surrounds the entire periphery of the gas discharge section 71. The annular portion 721 allows gas to be taken in from the entire periphery of the gas discharge section 71. The annular portion 721 preferably has a circular ring shape. It allows gas to be taken in evenly from the entire periphery, with the gas discharge section 71 at the center. The annular portion 721 may also have a rectangular ring shape.

The gas discharge section 71 may protrude further toward the substrate W than the air volume amplifier section 72, for example, it may protrude higher than the air volume amplifier section 72. Specifically, the nozzle 711 of the gas discharge section 71 may protrude further toward the substrate W than the annular section 721 of the air volume amplifier section 72, for example, it may protrude higher than the annular section 721.

Since the nozzle 711 protrudes further toward the substrate W than the annular portion 721, the gas ejected from the nozzle 711 can easily pass between the annular portion 721 and the substrate W. This increases the flow rate of the gas that spreads radially along the underside of the substrate W. A large area of the substrate W can be dried with a small gas ejection flow rate. Furthermore, floating of the substrate W due to the ejection of gas can be suppressed.

The air volume amplifier 72 has an intake port 722 for taking in surrounding gas between the annular portion 721 and the horizontal plate 572. The area of the intake port 722 is equal to, for example, the product of the height of the gap between the annular portion 721 and the horizontal plate 572 and the outer circumferential length of the annular portion 721.

The air volume amplifier 72 has an outlet 723 on the surface of the annular portion 721 facing the substrate W, which blows gas toward the substrate W. The area of the outlet 723 is, for example, the area of the opening formed on the surface of the annular portion 721 facing the substrate W.

The area of the intake port 722 may be larger than the area of the blow-out port 723. This allows a large amount of gas to be taken in from around the air volume amplifier 72, thereby further amplifying the amount of air blowing onto the substrate W.

The annular portion 721 may have a tapered surface 724 at the blow-out port 723 that widens toward the substrate W (e.g., upward). The gas flow can be smoothly bent along the tapered surface 724, preventing vortexes from occurring and preventing gas stagnation.

The annular portion 721 has an opening 725 on the surface (e.g., the bottom surface) facing away from the surface facing the substrate W. The annular portion 721 may have a tapered surface (not shown) at the opening 725 that widens toward the side opposite the substrate W (e.g., downward).

In this embodiment, the liquid removal unit 70 is provided in the waiting unit 57C, which temporarily waits for the substrate W along the transport path of the substrate W from the processing unit 50 to the cleaning unit 31B, but it may also be provided in a waiting unit (e.g., the inversion unit 58), which temporarily waits for the substrate W along the transport path of the substrate W from the processing unit 50 to the cleaning unit 31A. As mentioned above, the inversion unit 58 and the waiting unit may be provided separately.

After the suction unit 62 in the processing unit 50 sucks up the liquid L adhering to the substrate W, the liquid removal unit 70 in the waiting unit removes the liquid L adhering to the substrate W. This not only prevents the liquid L from scattering inside the substrate processing apparatus 1, but also prevents the substrate holding units 311 of the cleaning units 31A and 31B from becoming soiled.

The foregoing describes embodiments of the substrate holding mechanism, substrate processing apparatus, and substrate processing method according to the present disclosure, but the present disclosure is not limited to the above embodiments. Various changes, modifications, substitutions, additions, deletions, and combinations are possible within the scope of the claims. Naturally, these also fall within the technical scope of the present disclosure.

This application claims priority based on Patent Application No. 2022-108009, filed with the Japan Patent Office on July 4, 2022, and the entire contents of Patent Application No. 2022-108009 are incorporated herein by reference.

REFERENCE SIGNS LIST 1 substrate processing apparatus 9 control section 54 first transport section 61 substrate suction section 62 suction section 63 supply section L liquid W substrate

Claims (18)

1. A substrate processing apparatus comprising: a substrate suction unit that suctions a substrate; a supply unit that supplies a fluid to an interior of the substrate suction unit; a suction unit that suctions the fluid from an interior of the substrate suction unit; a first transport unit that holds the substrate from an opposite side to the substrate suction unit; and a control unit that controls the supply unit, the suction unit, and the first transport unit,
The control unit performs the following control operations in the substrate processing apparatus: controlling the first transport unit to hold the substrate adsorbed by the substrate adsorption unit from the side opposite the substrate adsorption unit; controlling the supply of liquid into the inside of the substrate adsorption unit; controlling the first transport unit to move the first transport unit a set distance to separate the substrate a set distance from the substrate adsorption unit; and controlling the sucking of the liquid remaining between the substrate adsorption unit and the substrate into the inside of the substrate adsorption unit while the substrate is separated the set distance from the substrate adsorption unit. A substrate processing apparatus as described in claim 1, wherein the substrate suction unit has a porous body, the porous body has an adsorption surface that adsorbs the substrate, and the supply unit supplies the liquid into the inside of the porous body. A substrate processing apparatus as described in claim 1 or 2, wherein the control unit controls the filling of the space between the substrate and the substrate suction portion with a film of the liquid while the substrate is spaced a set distance from the substrate suction portion. A substrate processing apparatus as described in claim 1 or 2, wherein the control unit determines whether the substrate is held by the first transport unit after supplying the liquid into the inside of the substrate suction unit and before sucking the liquid into the inside of the substrate suction unit. a processing unit including the substrate suction unit and a tool driving unit that drives a tool that processes the substrate that is sucked onto the substrate suction unit;
a cleaning unit that cleans the substrate processed in the processing unit;
a waiting section for temporarily waiting the substrate along a transport path from the processing section to the cleaning section;
Equipped with
the cleaning unit has a substrate holding unit that holds the substrate,
The substrate processing apparatus according to claim 1 , wherein the standby section comprises a liquid removal section that removes the liquid from a region of the substrate that contacts the substrate holding section. A substrate processing apparatus as described in claim 5, wherein the liquid removal unit has a gas discharge unit that discharges gas toward an area of the substrate that contacts the substrate holding unit. A substrate processing apparatus as described in claim 6, wherein the gas discharge unit supplies the cleaning liquid to the region of the substrate by discharging a cleaning liquid before discharging the gas. A substrate processing apparatus as described in claim 6, wherein the liquid removal unit has an air volume amplification unit that amplifies the air volume hitting the substrate by drawing gas around the gas discharge unit into the flow of gas discharged by the gas discharge unit using the Coanda effect. A substrate processing apparatus as described in claim 8, wherein the air volume amplification section has an annular section that surrounds the entire periphery of the gas discharge section. suctioning the substrate with a substrate suction portion;
holding the substrate with a first transport unit from an opposite side to the substrate suction unit;
supplying a liquid into the substrate suction portion;
moving the first transport unit a set distance to separate the substrate from the substrate suction unit by a set distance;
sucking the liquid remaining between the substrate suction portion and the substrate into the substrate suction portion while the substrate is spaced a set distance from the substrate suction portion;
A substrate processing method comprising: A substrate processing method as described in claim 10, wherein the substrate suction portion has a porous body, the porous body has an adsorption surface that adsorbs the substrate, and the liquid is supplied into the inside of the porous body. A substrate processing method as described in claim 10 or 11, comprising filling the space between the substrate and the substrate suction portion with a film of the liquid while the substrate is spaced a set distance from the substrate suction portion. A substrate processing method as described in claim 10 or 11, comprising determining whether the substrate is held by the first transport unit after supplying the liquid into the interior of the substrate suction unit and before sucking the liquid into the interior of the substrate suction unit. processing the substrate by a processing unit having the substrate suction unit and a tool driving unit that drives a tool that processes the substrate sucked on the substrate suction unit; cleaning the substrate by a cleaning unit; and temporarily waiting the substrate in a waiting unit along a transport path of the substrate from the processing unit to the cleaning unit,
12. The substrate processing method according to claim 10, further comprising removing the liquid from a region of the substrate that contacts the substrate holding part in the waiting part before the substrate is held by the substrate holding part in the cleaning part. A substrate processing method as described in claim 14, wherein in the waiting section, a gas discharge section discharges gas toward the region of the substrate. A substrate processing method as described in claim 15, comprising supplying the cleaning liquid to the region of the substrate by injecting a cleaning liquid in the waiting section before the gas ejection section ejects the gas. A substrate processing method as described in claim 15, wherein in the waiting section, an air volume amplification section provided around the gas discharge section amplifies the air volume impinging on the substrate by drawing gas around the gas discharge section into the flow of gas discharged by the gas discharge section using the Coanda effect. A substrate processing method as described in claim 17, wherein the air volume amplification section has an annular section that surrounds the entire periphery of the gas discharge section.