JP7740936B2 - Transfer film for forming deposition mask, method for manufacturing deposition mask, and deposition mask - Google Patents

Description

This disclosure relates to a transfer film for forming a deposition mask, a method for manufacturing a deposition mask, and a deposition mask.

For example, deposition masks are used as masters for patterns formed by deposition methods. Vacuum deposition is a well-known example of a deposition method. For example, in vacuum deposition methods using a deposition mask with through-holes, a substance vaporized from a vaporization source adheres to an object through the through-holes in the deposition mask placed above the object, forming a pattern. For example, the through-holes in the deposition mask are formed by photolithography (see, for example, Patent Documents 1 and 2 listed below).

Japanese Patent Application Laid-Open No. 2020-002470 Japanese Patent Application Laid-Open No. 2019-214788

From the perspective of uniformity in the thickness of the resist layer, methods for manufacturing deposition masks using transfer films are being considered. For example, in methods for manufacturing deposition masks using transfer films, deposition masks are manufactured through the steps of laminating the transfer film to a substrate, exposing, developing, etching, and then removing the resist.

However, during the manufacturing process of deposition masks using transfer films, wrinkles can occur in the transfer film or in the laminate obtained by laminating the transfer film and the substrate. For example, the above-mentioned phenomenon is likely to occur during the process of laminating the transfer film and the substrate using a roll-to-roll method, or during the process of transporting the laminate obtained by laminating the transfer film and the substrate. If wrinkles like those described above occur, problems such as reduced resolution and increased dimensional variation in the through holes formed in the substrate may occur. There is also a demand for reducing appearance defects (e.g., scratches) in deposition masks.

An object of one embodiment of the present disclosure is to provide a transfer film for forming a deposition mask that has excellent transportability.
Another embodiment of the present disclosure has an object to provide a method for manufacturing a deposition mask using a transfer film having excellent transportability.
Another embodiment of the present disclosure aims to provide a deposition mask with fewer appearance defects.

The present disclosure includes the following aspects.
<1> A method for manufacturing a vapor deposition mask, comprising: preparing a substrate having a first surface and a second surface opposite the first surface; preparing a transfer film including: a temporary support having a first surface with a static friction coefficient of 1.0 or less and a second surface opposite the first surface with the static friction coefficient; and a transfer layer facing the second surface of the temporary support; bonding the substrate and the transfer film together, and arranging the transfer layer and the temporary support in this order on the first surface of the substrate; pattern-exposing the transfer layer arranged on the substrate; performing a development treatment on the transfer layer after pattern-exposing the transfer layer to form a resist pattern; performing an etching treatment on the substrate after forming the resist pattern, to form through holes extending from the first surface of the substrate to the second surface of the substrate; and removing the resist pattern after forming the through holes.
<2> A method for manufacturing a vapor deposition mask, the method including: preparing a substrate having a first surface and a second surface opposite to the first surface; preparing a transfer film including: a temporary support having a first surface with a dynamic friction coefficient of 0.80 or less and a second surface opposite to the first surface having the dynamic friction coefficient; and a transfer layer facing the second surface of the temporary support; bonding the substrate and the transfer film together, and arranging the transfer layer and the temporary support in this order on the first surface of the substrate; pattern-exposing the transfer layer arranged on the substrate; performing a development treatment on the transfer layer after pattern-exposing the transfer layer to form a resist pattern; performing an etching treatment on the substrate after forming the resist pattern, to form through holes extending from the first surface of the substrate to the second surface of the substrate; and removing the resist pattern after forming the through holes.
<3> The method for producing a vapor deposition mask according to <1> or <2>, wherein the substrate includes a metal layer having an average thickness of 30 μm or less.
<4> The method for manufacturing a deposition mask according to <3>, wherein the metal layer contains iron.
<5> The method for manufacturing a deposition mask according to any one of <1> to <4>, wherein the first surface of the base has a surface roughness Ra of 0.1 μm to 5.0 μm.
<6> The method for producing a deposition mask according to any one of <1> to <5>, wherein the diameter of the opening defined by the resist pattern is 35 μm or less.
<7> The method for manufacturing a vapor deposition mask according to any one of <1> to <6>, wherein the through-holes on the first surface of the base have a diameter of 35 μm or less.
<8> A transfer film for forming a deposition mask, comprising: a temporary support having a first surface having a static friction coefficient of 1.0 or less and a second surface opposite to the first surface; and a transfer layer facing the second surface of the temporary support.
<9> A transfer film for forming a deposition mask, comprising: a temporary support having a first surface having a dynamic friction coefficient of 0.80 or less and a second surface opposite to the first surface; and a transfer layer facing the second surface of the temporary support.
<10> The transfer film for forming a deposition mask according to <8> or <9>, wherein the transfer layer is a photosensitive layer.
<11> The transfer film for forming a deposition mask according to <8> or <9>, wherein the transfer layer includes a photosensitive layer and an intermediate layer.
<12> The transfer film for forming a deposition mask according to <10> or <11>, wherein the photosensitive layer is a negative photosensitive layer.
<13> The transfer film for forming a deposition mask according to <10> or <11>, wherein the photosensitive layer is a positive-type photosensitive layer.
<14> The transfer film for forming a deposition mask according to any one of <8> to <13>, wherein the temporary support has an average thickness of 50 μm or less.
<15> The transfer film for forming a deposition mask according to any one of <8> to <14>, wherein the temporary support has a haze value of 5% or less.
<16> A vapor deposition mask having a first surface, a second surface opposite to the first surface, and a plurality of through holes, wherein each of the plurality of through holes has a first opening in the first surface and a second opening in the second surface, and wherein a ratio of a static friction coefficient of at least one surface selected from the group consisting of the first surface and the second surface to a static friction coefficient of a base material used as a raw material of the vapor deposition mask is 1.1 or less.
<17> A vapor deposition mask having a first surface, a second surface opposite to the first surface, and a plurality of through holes, wherein each of the plurality of through holes has a first opening in the first surface and a second opening in the second surface, and wherein a ratio of a dynamic friction coefficient of at least one surface selected from the group consisting of the first surface and the second surface to a dynamic friction coefficient of a base material used as a raw material of the vapor deposition mask is 1.1 or less.
<18> The deposition mask according to <16> or <17>, wherein the static friction coefficient of at least one surface selected from the group consisting of the first surface and the second surface is 1.0 or less.
<19> The deposition mask according to any one of <16> to <18>, wherein the dynamic friction coefficient of at least one surface selected from the group consisting of the first surface and the second surface is 0.80 or less.
<20> The deposition mask according to any one of <16> to <19>, wherein the first opening has a diameter of 35 μm or less.
<21> The deposition mask according to any one of <16> to <20>, wherein the first surface has a surface roughness Ra of 1.0 μm or less.
<22> The deposition mask according to any one of <16> to <21>, comprising a metal layer having an average thickness of 30 μm or less.
<23> The method for producing a deposition mask according to <22>, wherein the metal layer contains iron.

According to one embodiment of the present disclosure, a transfer film for forming a deposition mask having excellent transportability is provided.
According to another embodiment of the present disclosure, there is provided a method for manufacturing a deposition mask using a transfer film having excellent transportability.
According to another embodiment of the present disclosure, there is provided a deposition mask with fewer appearance defects.

FIG. 1 is a schematic plan view showing a deposition mask according to an embodiment. FIG. 2 is a schematic plan view showing an enlarged view of the through-holes of the deposition mask shown in FIG. FIG. 3 is a schematic cross-sectional view showing an enlarged view of a through-hole of the deposition mask shown in FIG. FIG. 4 is a schematic cross-sectional view illustrating a method for manufacturing a deposition mask according to an embodiment.

Embodiments of the present disclosure are described in detail below. The present disclosure is in no way limited to the following embodiments. The following embodiments may be modified as appropriate within the scope of the purpose of the present disclosure.

When describing embodiments of the present disclosure with reference to the drawings, explanations of overlapping components and reference numerals may be omitted. Components indicated with the same reference numerals in the drawings are the same components. Dimensional ratios in the drawings do not necessarily represent actual dimensional ratios.

In this disclosure, numerical ranges indicated using "to" indicate a range that includes the numerical value before "to" as the lower limit and the numerical value before "to" as the upper limit. In numerical ranges described in stages in this disclosure, the upper or lower limit stated in a certain numerical range may be replaced with the upper or lower limit of another numerical range described in stages. Furthermore, in numerical ranges described in this disclosure, the upper or lower limit stated in a certain numerical range may be replaced with a value shown in the examples.

In this disclosure, "(meth)acrylic" refers to acrylic, methacrylic, or both acrylic and methacrylic.

In this disclosure, "(meth)acrylate" refers to acrylate, methacrylate, or both acrylate and methacrylate.

In this disclosure, "(meth)acryloyl" refers to acryloyl, methacryloyl, or both acryloyl and methacryloyl.

In this disclosure, when multiple substances corresponding to each component are present in the composition, the amount of each component in the composition refers to the total amount of the multiple corresponding substances present in the composition, unless otherwise specified.

In this disclosure, the term "process" includes not only independent processes but also processes that cannot be clearly distinguished from other processes as long as the intended purpose is achieved.

In this disclosure, groups (atomic groups) that are not marked as "substituted" or "unsubstituted" include groups (atomic groups) that have no substituents and groups (atomic groups) that have a substituent. For example, an "alkyl group" includes not only alkyl groups that have no substituents (i.e., unsubstituted alkyl groups), but also alkyl groups that have a substituent (i.e., substituted alkyl groups).

In this disclosure, unless otherwise specified, "exposure" includes not only exposure using light, but also drawing using particle beams such as electron beams and ion beams. Furthermore, light used for exposure generally includes the bright line spectrum of a mercury lamp, far ultraviolet light typified by excimer lasers, extreme ultraviolet light (EUV light), X-rays, electron beams, and other actinic rays (active energy rays).

Chemical structural formulas in this disclosure may be written as simplified structural formulas in which hydrogen atoms are omitted.

In this disclosure, "mass %" and "weight %" are synonymous, and "parts by mass" and "parts by weight" are synonymous.

In this disclosure, a combination of two or more preferred aspects is a more preferred aspect.

In this disclosure, "transparent" means that the average transmittance of visible light with wavelengths of 400 nm to 700 nm is 80% or more, and preferably 90% or more.

In this disclosure, the average transmittance of visible light is a value measured using a spectrophotometer, and can be measured using, for example, the spectrophotometer U-3310 manufactured by Hitachi, Ltd.

Unless otherwise specified, the weight-average molecular weight (Mw) and number-average molecular weight (Mn) in this disclosure are molecular weights measured using a gel permeation chromatography (GPC) analyzer equipped with columns TSKgel GMHxL, TSKgel G4000HxL, or TSKgel G2000HxL (all product names manufactured by Tosoh Corporation) in THF (tetrahydrofuran) as the solvent, detected with a differential refractometer, and converted using polystyrene as the standard.

Unless otherwise specified, in this disclosure, the content of metal elements is a value measured using an inductively coupled plasma (ICP) spectroscopic analyzer.

Unless otherwise specified, in this disclosure, the refractive index is a value measured using an ellipsometer at a wavelength of 550 nm.

Unless otherwise specified, in this disclosure, hue is a value measured using a color difference meter (CR-221, manufactured by Minolta Co., Ltd.).

In this disclosure, "alkali-soluble" means that the solubility in 100 g of a 1% by mass aqueous solution of sodium carbonate at a liquid temperature of 22°C is 0.1 g or more.

In this disclosure, "water-soluble" means that the solubility in 100 g of water at pH 7.0 and a liquid temperature of 22°C is 0.1 g or more.

In this disclosure, "solids" refers to all components excluding solvents. Liquid components other than solvents are included in the solids.

In this disclosure, ordinal numbers (e.g., "first" and "second") are terms used to distinguish elements and do not limit the number of elements or the relative importance of elements.

<Transfer film for forming deposition masks>
The transfer film for forming a deposition mask according to the present disclosure (hereinafter, sometimes simply referred to as "transfer film") will be described below. The transfer film includes a temporary support and a transfer layer. The temporary support has a first surface and a second surface opposite the first surface. The transfer layer faces the second surface of the temporary support. In other words, in terms of relative positional relationship, the transfer layer is disposed on the second surface of the temporary support.

[Temporary support]
The temporary support is a support that supports the transfer layer and is peelable from the transfer layer. The temporary support may have a single-layer structure or a multi-layer structure. The temporary support has a first surface and a second surface opposite to the first surface, and the second surface of the temporary support faces the transfer layer.

The static friction coefficient of the first surface of the temporary support is preferably 1.0 or less, more preferably 0.85 or less, and even more preferably 0.75 or less. When the static friction coefficient of the first surface of the temporary support is 1.0 or less, the slipperiness of the first surface of the temporary support is improved. Because the first surface of the temporary support can come into contact with transport items such as rollers during the transport process, improving the slipperiness of the first surface of the temporary support improves the transportability of the transfer film. As a result, for example, the occurrence of wrinkles is suppressed during the manufacturing process of a deposition mask using the transfer film. From the perspective of the holding force against rollers during transport, the static friction coefficient of the first surface of the temporary support is preferably 0.1 or more, and more preferably 0.2 or more.

The dynamic friction coefficient of the first surface of the temporary support is preferably 0.80 or less, more preferably 0.75 or less, and even more preferably 0.70 or less. When the dynamic friction coefficient of the first surface of the temporary support is 0.80 or less, the slipperiness of the first surface of the temporary support is improved. Because the first surface of the temporary support can come into contact with transport items such as rollers during the transport process, improving the slipperiness of the first surface of the temporary support improves the transportability of the transfer film. As a result, for example, the occurrence of wrinkles is suppressed during the manufacturing process of a deposition mask using the transfer film. From the perspective of the holding force against rollers during transport, the dynamic friction coefficient of the first surface of the temporary support is preferably 0.10 or more, and more preferably 0.15 or more.

From the viewpoint of transportability, the first surface of the temporary support may have either the static friction coefficient described above or the dynamic friction coefficient described above. From the viewpoint of transportability, the first surface of the temporary support may have both the static friction coefficient described above and the dynamic friction coefficient described above.

The method for adjusting the coefficient of friction is not limited. The coefficient of friction of the temporary support may be adjusted by the composition and surface roughness of the temporary support. For example, if the temporary support contains particles, the coefficient of friction tends to be smaller. For example, if the surface roughness is increased, the coefficient of friction tends to be smaller. In addition, forming a wax layer tends to reduce the friction formation number.

In this disclosure, the static and dynamic coefficients of friction are measured in accordance with JIS K7125:1999 by bringing an object into contact with silicone rubber and sliding the object over the silicone rubber.

The temporary support is preferably a film, more preferably a resin film. The temporary support is preferably a flexible film that does not significantly deform, shrink, or stretch under pressure, or under pressure and heat. Examples of resin films include polyethylene terephthalate film (e.g., biaxially oriented polyethylene terephthalate film), polymethyl methacrylate film, cellulose triacetate film, polystyrene film, polyimide film, and polycarbonate film. The temporary support is preferably a polyethylene terephthalate film. It is preferable that the film used as the temporary support be free of deformations such as wrinkles and scratches.

From the viewpoint of being able to perform pattern exposure through the temporary support, it is preferable that the temporary support have high transparency. The transmittance at 365 nm is preferably 60% or more, and more preferably 70% or more.

From the viewpoint of the transparency of the temporary support and the linearity of the pattern formed after exposure through the temporary support, it is preferable to reduce the haze value of the temporary support. The haze value of the temporary support is preferably 5% or less, more preferably 2% or less, even more preferably 0.5% or less, and particularly preferably 0.1% or less. There is no lower limit for the haze value of the temporary support. The lower limit for the haze value of the temporary support may be 0.01% or 0.001%. The haze value is measured using a haze meter (for example, the NDH400 haze meter manufactured by Nippon Denshoku Industries Co., Ltd.).

From the viewpoints of pattern formability during pattern exposure through the temporary support and transparency of the temporary support, it is preferable that the temporary support contains as few coarse particles, foreign matter, and defects as possible. The number of particles, foreign matter, and defects having a diameter of 1 μm or more on the temporary support is preferably 50 particles/10 ^mm2 or less, more preferably ¹⁰ particles/10 mm2 or less, even more preferably 3 particles/10 ^mm2 or less, and particularly preferably ⁰ particles/10 mm2.

From the viewpoint of resolution in pattern exposure via a temporary support, the average thickness of the temporary support is preferably 200 μm or less, more preferably 100 μm or less, and even more preferably 50 μm or less. The average thickness of the temporary support is preferably 5 μm or more, and more preferably 10 μm or more. The average thickness of the temporary support is calculated as the arithmetic average of the thicknesses measured at five locations by cross-sectional observation using a scanning electron microscope (SEM).

Preferred temporary supports include, for example, a 16 μm thick biaxially oriented polyethylene terephthalate film, a 12 μm thick biaxially oriented polyethylene terephthalate film, and a 9 μm thick biaxially oriented polyethylene terephthalate film.

Preferred embodiments of the temporary support are described, for example, in paragraphs [0017] to [0018] of JP 2014-85643 A, paragraphs [0019] to [0026] of JP 2016-27363 A, paragraphs [0041] to [0057] of WO 2012/081680 A, paragraphs [0029] to [0040] of WO 2018/179370 A, and paragraphs [0012] to [0032] of JP 2019-101405 A. The above publications are incorporated herein by reference.

From the viewpoint of transportability, the temporary support may include a particle-containing layer. The temporary support may include a base layer and a particle-containing layer. Examples of the base layer include the resin film described above. The particle-containing layer is preferably disposed as the outermost layer on one or both sides of a temporary support having a multilayer structure. The particle-containing layer is preferably the outermost layer constituting the first surface of the temporary support. The particle-containing layer may be formed by a coating method or may be formed as a co-stretched layer. The diameter of the particles contained in the particle-containing layer is preferably 0.02 μm to 0.8 μm. The average thickness of the particle-containing layer is preferably 0.01 μm to 1.0 μm. The average thickness of the particle-containing layer is calculated by the arithmetic average of the thicknesses measured at five locations by cross-sectional observation using a scanning electron microscope (SEM).

[Transfer layer]
The transfer layer is disposed on the object, for example, by laminating a transfer film and the object. The transfer layer may have a single-layer structure or a multi-layer structure. Examples of the transfer layer include a photosensitive layer and an intermediate layer. The transfer layer preferably includes a photosensitive layer. The transfer layer may be a photosensitive layer. The transfer layer preferably includes an intermediate layer and a photosensitive layer.

(Photosensitive layer)
The transfer layer preferably includes a photosensitive layer. The photosensitive layer may be a negative-type photosensitive layer. The photosensitive layer may be a positive-type photosensitive layer. Components of the photosensitive layer include, for example, a polymer, a polymerizable compound, a polymerization initiator, a dye, a thermally crosslinkable compound, and other components.

-Polymer-
The photosensitive layer preferably contains a polymer. The type of polymer is not limited. Preferred examples of the polymer include alkali-soluble resins. Preferred examples of the alkali-soluble resin include known alkali-soluble resins used in etching resists. The alkali-soluble resin is preferably a binder polymer. The alkali-soluble resin is preferably an alkali-soluble resin having an acid group.

From the viewpoint of improving resolution by suppressing swelling of the photosensitive layer due to the developer, the acid value of the polymer is preferably 220 mgKOH/g or less, more preferably less than 200 mgKOH/g, and even more preferably less than 190 mgKOH/g. From the viewpoint of improving developability, the acid value of the polymer is preferably 60 mgKOH/g or more, more preferably 80 mgKOH/g or more, and even more preferably 120 mgKOH/g or more. The acid value is the mass [mg] of potassium hydroxide required to neutralize 1 g of sample. The acid value is calculated, for example, from the average content of acid groups in the compound. The acid value of the polymer is adjusted, for example, by the type of structural units constituting the polymer and the content of structural units containing acid groups.

The weight-average molecular weight of the polymer is preferably 5,000 to 500,000. A weight-average molecular weight of 500,000 or less improves resolution and developability. From the above perspectives, the weight-average molecular weight of the polymer is preferably 100,000 or less. A weight-average molecular weight of 5,000 or more facilitates control of the properties of the development aggregates and the properties of the unexposed film (e.g., edge fusing and cut-chip resistance). From the above perspectives, the weight-average molecular weight of the polymer is more preferably 10,000 or more, and even more preferably 20,000 or more. Edge fusing refers to the degree to which the photosensitive layer protrudes from the edge of the roll formed by winding the transfer film into a roll. Cut-chip resistance refers to the degree to which chips fly off when the unexposed film is cut with a cutter. For example, if chips adhere to the top surface of the photosensitive layer, they may be transferred to the mask during the exposure process, resulting in defective products. The dispersity of the polymer is preferably 1.0 to 6.0, more preferably 1.0 to 5.0, even more preferably 1.0 to 4.0, and particularly preferably 1.0 to 3.0. The weight average molecular weight (Mw) and number average molecular weight (Mn) are measured by gel permeation chromatography. The dispersity is the ratio of the weight average molecular weight to the number average molecular weight (i.e., weight average molecular weight/number average molecular weight).

From the viewpoint of suppressing line width thickening and deterioration of resolution when the focal position shifts during exposure, the polymer preferably contains an aromatic hydrocarbon group, and more preferably contains a structural unit having an aromatic hydrocarbon group. Examples of aromatic hydrocarbon groups include substituted or unsubstituted phenyl groups and substituted or unsubstituted aralkyl groups. The content of structural units having aromatic hydrocarbon groups in the polymer is preferably 20% by mass or more, more preferably 30% by mass or more, even more preferably 40% by mass or more, particularly preferably 45% by mass or more, and most preferably 50% by mass or more, based on the total mass of the polymer. The content of structural units having aromatic hydrocarbon groups in the polymer is preferably 95% by mass or less, more preferably 85% by mass or less, based on the total mass of the polymer. Note that when the photosensitive layer contains multiple types of polymers, the content of structural units having aromatic hydrocarbon groups is determined as a mass average.

Examples of monomers that form structural units having an aromatic hydrocarbon group include monomers having an aralkyl group, styrene, and polymerizable styrene derivatives (e.g., methylstyrene, vinyltoluene, tert-butoxystyrene, acetoxystyrene, 4-vinylbenzoic acid, styrene dimer, and styrene trimer). Monomers having an aralkyl group or styrene are preferred. When the monomer that forms the structural unit having an aromatic hydrocarbon group is styrene, the content of styrene-derived structural units is preferably 20% to 50% by mass, more preferably 25% to 45% by mass, even more preferably 30% to 40% by mass, and particularly preferably 30% to 35% by mass, relative to the total mass of the polymer.

Examples of aralkyl groups include substituted or unsubstituted phenylalkyl groups. Substituted or unsubstituted benzyl groups are preferred.

Examples of monomers having a substituted or unsubstituted benzyl group include (meth)acrylates having a substituted or unsubstituted benzyl group (e.g., benzyl (meth)acrylate, chlorobenzyl (meth)acrylate) and vinyl monomers having a substituted or unsubstituted benzyl group (e.g., vinylbenzyl chloride, vinylbenzyl alcohol). Benzyl (meth)acrylate is preferred. When the monomer forming the structural unit having an aromatic hydrocarbon group is benzyl (meth)acrylate, the content of the structural unit derived from benzyl (meth)acrylate is preferably 50% to 95% by mass, more preferably 60% to 90% by mass, even more preferably 70% to 90% by mass, and particularly preferably 75% to 90% by mass, relative to the total mass of the polymer.

An example of a monomer having a substituted or unsubstituted phenylalkyl group other than a benzyl group is phenylethyl (meth)acrylate.

The polymer having a structural unit having an aromatic hydrocarbon group is preferably obtained by polymerizing a monomer having an aromatic hydrocarbon group with at least one monomer selected from the group consisting of a first monomer and a second monomer. One or more types of each monomer may be used.

The polymer that does not have a structural unit having an aromatic hydrocarbon group is preferably obtained by polymerizing a first monomer, and more preferably by polymerizing the first monomer and a second monomer. One or more types of each monomer may be used.

The first monomer is a monomer having a carboxy group in the molecule. Examples of the first monomer include (meth)acrylic acid, fumaric acid, cinnamic acid, crotonic acid, itaconic acid, 4-vinylbenzoic acid, maleic anhydride, and maleic acid half ester. (Meth)acrylic acid is preferred.

The content of the structural units derived from the first monomer in the polymer is preferably 5% by mass to 50% by mass, more preferably 10% by mass to 40% by mass, and even more preferably 15% by mass to 30% by mass, relative to the total mass of the polymer.

The content of the structural units derived from the first monomer is preferably 10% to 50% by mass, based on the total mass of the polymer. From the viewpoints of achieving good developability and controlling edge fusing properties, the content of the structural units derived from the first monomer is preferably 10% by mass or more. Furthermore, the content of the structural units derived from the first monomer is preferably 15% by mass or more, and more preferably 20% by mass or more, based on the total mass of the polymer. From the viewpoints of high resolution of the resist pattern, the shape of the bottom of the resist pattern, and the chemical resistance of the resist pattern, the content of the structural units derived from the first monomer is preferably 50% by mass or less. Furthermore, the content of the structural units derived from the first monomer is preferably 35% by mass or less, more preferably 30% by mass or less, and even more preferably 27% by mass or less, based on the total mass of the polymer.

The second monomer is non-acidic and has at least one ethylenically unsaturated group. Examples of the second monomer include (meth)acrylate compounds. Examples of the (meth)acrylate compounds include methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, n-butyl (meth)acrylate, isobutyl (meth)acrylate, tert-butyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, cyclohexyl (meth)acrylate, and 2-ethylhexyl (meth)acrylate. Examples of the second monomer include vinyl alcohol ester compounds. Examples of vinyl alcohol ester compounds include vinyl acetate. Examples of the second monomer include (meth)acrylonitrile. Methyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, and n-butyl (meth)acrylate are preferred, with methyl (meth)acrylate being more preferred.

The content of structural units derived from the second monomer in the polymer is preferably 5% to 60% by mass, more preferably 15% to 50% by mass, and even more preferably 20% to 45% by mass, relative to the total mass of the polymer.

From the viewpoint of suppressing line width widening and deterioration of resolution when the focus position shifts during exposure, it is preferable that the polymer contain at least one structural unit selected from the group consisting of structural units having an aralkyl group and structural units derived from styrene. A preferred example of the polymer is a copolymer containing structural units derived from methacrylic acid, structural units derived from benzyl methacrylate, and structural units derived from styrene. A preferred example of the polymer is a copolymer containing structural units derived from methacrylic acid, structural units derived from methyl methacrylate, structural units derived from benzyl methacrylate, and structural units derived from styrene.

The polymer preferably contains 25% to 40% by mass of structural units having an aromatic hydrocarbon group, 20% to 35% by mass of structural units derived from a first monomer, and 30% to 45% by mass of structural units derived from a second monomer.

The polymer preferably contains 70% to 90% by mass of structural units having an aromatic hydrocarbon group and 10% to 25% by mass of structural units derived from the first monomer.

The polymer may have a linear, branched, or alicyclic structure in the side chain. The polymer may have both a branched and an alicyclic structure in the side chain. The use of a monomer containing a group with a branched structure in the side chain or a monomer containing a group with an alicyclic structure in the side chain can introduce a branched or alicyclic structure into the side chain of the polymer. The alicyclic structure may be a monocyclic or polycyclic structure.

Specific examples of monomers containing a group with a branched structure in the side chain include isopropyl (meth)acrylate, isobutyl (meth)acrylate, s-butyl (meth)acrylate, tert-butyl (meth)acrylate, isoamyl (meth)acrylate, tert-amyl (meth)acrylate, isoamyl (meth)acrylate, 2-octyl (meth)acrylate, 3-octyl (meth)acrylate, and tert-octyl (meth)acrylate. Isopropyl (meth)acrylate, isobutyl (meth)acrylate, or tert-butyl methacrylate is preferred, and isopropyl methacrylate or tert-butyl methacrylate is more preferred.

Specific examples of monomers containing a group with an alicyclic structure in the side chain include monomers with a monocyclic aliphatic hydrocarbon group and monomers with a polycyclic aliphatic hydrocarbon group. Specific examples of monomers containing a group with an alicyclic structure in the side chain include (meth)acrylates with an alicyclic hydrocarbon group having 5 to 20 carbon atoms. Specific examples of monomers containing a group having an alicyclic structure in the side chain include (bicyclo[2.2.1]heptyl-2(meth)acrylate), (meth)acrylate-1-adamantyl, (meth)acrylate-2-adamantyl, (meth)acrylate-3-methyl-1-adamantyl, (meth)acrylate-3,5-dimethyl-1-adamantyl, (meth)acrylate-3-ethyladamantyl, (meth)acrylate-3-methyl-5-ethyl-1-adamantyl, (meth)acrylate-3,5,8-triethyl-1-adamantyl, (meth)acrylate-3,5-dimethyl-8-ethyl-1-adamantyl, (meth)acrylate-2-methyl-2-adamantyl, (meth)acrylate-2-ethyl-2-adamantyl, (meth)acrylate Examples include 3-hydroxy-1-adamantyl (meth)acrylate, octahydro-4,7-menthanoinden-5-yl (meth)acrylate, octahydro-4,7-menthanoinden-1-ylmethyl (meth)acrylate, 1-menthyl (meth)acrylate, tricyclodecane (meth)acrylate, 3-hydroxy-2,6,6-trimethyl-bicyclo[3.1.1]heptyl (meth)acrylate, 3,7,7-trimethyl-4-hydroxy-bicyclo[4.1.0]heptyl (meth)acrylate, (nor)bornyl (meth)acrylate, isobornyl (meth)acrylate, fenchyl (meth)acrylate, 2,2,5-trimethylcyclohexyl (meth)acrylate, and cyclohexyl (meth)acrylate.

Of the (meth)acrylic acid esters described above, cyclohexyl (meth)acrylate, (nor)bornyl (meth)acrylate, isobornyl (meth)acrylate, 1-adamantyl (meth)acrylate, 2-adamantyl (meth)acrylate, fenchyl (meth)acrylate, 1-menthyl (meth)acrylate, or tricyclodecane (meth)acrylate is preferred, and cyclohexyl (meth)acrylate, (nor)bornyl (meth)acrylate, isobornyl (meth)acrylate, 2-adamantyl (meth)acrylate, or tricyclodecane (meth)acrylate is more preferred.

The photosensitive layer may contain one or more types of polymers. It is preferable that the photosensitive layer contains two types of polymers having aromatic hydrocarbon groups. It is preferable that the photosensitive layer contains a polymer having an aromatic hydrocarbon group and a polymer not having an aromatic hydrocarbon group. In the latter case, the content of the polymer having an aromatic hydrocarbon group is preferably 50% by mass or more, more preferably 70% by mass or more, even more preferably 80% by mass or more, and particularly preferably 90% by mass or more, based on the total mass of the polymer.

The polymer is preferably synthesized by adding a radical polymerization initiator (e.g., benzoyl peroxide and azoisobutyronitrile) to a solution containing monomers and a solvent (e.g., acetone, methyl ethyl ketone, and isopropanol), and then heating and stirring the resulting mixture. Synthesis may also be performed by adding a portion of a mixture of multiple raw materials dropwise to the reaction solution. After the reaction is complete, the concentration may be adjusted by adding a solvent. Examples of synthesis methods include solution polymerization, bulk polymerization, suspension polymerization, and emulsion polymerization.

The glass transition temperature (Tg) of the polymer is preferably 30°C or higher and 135°C or lower. Using a polymer with a Tg of 135°C or lower can suppress line width thickening or deterioration of resolution when the focus position is shifted during exposure. From the above perspective, the Tg of the polymer is preferably 130°C or lower, more preferably 120°C or lower, and even more preferably 110°C or lower. Using a polymer with a Tg of 30°C or higher can improve edge fuse resistance. From the above perspective, the Tg of the polymer is preferably 40°C or higher, more preferably 50°C or higher, even more preferably 60°C or higher, and particularly preferably 70°C or higher.

The alkali-soluble resin may be any of the alkali-soluble resins described below in the description of the thermoplastic resin layer.

The photosensitive layer may contain one or more alkali-soluble resins.

The content of the alkali-soluble resin is preferably 10% to 90% by mass, more preferably 30% to 70% by mass, and even more preferably 40% to 60% by mass, relative to the total mass of the photosensitive layer. From the viewpoint of controlling the development time, the content of the alkali-soluble resin is preferably 90% by mass or less. From the viewpoint of improving edge fuse resistance, the content of the alkali-soluble resin is preferably 10% by mass or more.

The photosensitive layer may contain a resin other than an alkali-soluble resin. Examples of resins other than alkali-soluble resins include resins with a solubility of less than 0.1 g in 100 g of a 1% by weight aqueous solution of sodium carbonate at a liquid temperature of 22°C. Examples of such resins include acrylic resins, styrene-acrylic copolymers (limited to copolymers with a styrene content of 40% by weight or less), polyurethane, polyvinyl alcohol, polyvinyl formal, polyamide, polyester, epoxy resins, polyacetal, polyhydroxystyrene, polyimide, polybenzoxazole, polysiloxane, polyethyleneimine, polyallylamine, and polyalkylene glycol.

-Polymerizable compound-
The photosensitive layer (preferably a negative photosensitive layer) preferably contains a compound having a polymerizable group (i.e., a polymerizable compound). The "polymerizable compound" refers to a compound that polymerizes in the presence of a polymerization initiator and is different from the above-mentioned polymers.

Examples of polymerizable groups include groups having an ethylenically unsaturated group. Examples of groups having an ethylenically unsaturated group include vinyl groups, acryloyl groups, methacryloyl groups, styryl groups, and maleimide groups. Examples of polymerizable groups include cationic polymerizable groups. Examples of cationic polymerizable groups include epoxy groups and oxetane groups. Groups having an ethylenically unsaturated group are preferred, with acryloyl groups and methacryloyl groups being more preferred.

As the polymerizable compound, a compound having one or more ethylenically unsaturated groups (i.e., an ethylenically unsaturated compound) is preferred, and a compound having two or more ethylenically unsaturated groups (i.e., a polyfunctional ethylenically unsaturated compound) is more preferred, in terms of achieving better photosensitivity in the photosensitive layer. As the ethylenically unsaturated compound, a (meth)acrylate compound having a (meth)acryloyl group is preferred. In terms of achieving better resolution and peelability, the number of ethylenically unsaturated groups in one molecule of the ethylenically unsaturated compound is preferably six or less, more preferably three or less, and even more preferably two or less.

In order to achieve a better balance between the photosensitivity, resolution, and releasability of the photosensitive layer, the photosensitive layer preferably contains a compound having two or three ethylenically unsaturated groups, and more preferably contains a compound having two ethylenically unsaturated groups (i.e., a bifunctional ethylenically unsaturated compound). From the viewpoint of excellent releasability, the content of the bifunctional ethylenically unsaturated compound relative to the total weight of the polymerizable compounds is preferably 20% by weight or more, more preferably more than 40% by weight, and even more preferably 55% by weight or more. The upper limit may be 100% by weight. In other words, all of the polymerizable compounds may be bifunctional ethylenically unsaturated compounds.

The photosensitive layer preferably contains a compound having an aromatic ring and two ethylenically unsaturated groups (hereinafter sometimes referred to as "ethylenically unsaturated compound B1"). Ethylenically unsaturated compound B1 is a bifunctional ethylenically unsaturated compound having one or more aromatic rings in one molecule, among the above-mentioned ethylenically unsaturated compounds.

In the photosensitive layer, the ratio of the content of ethylenically unsaturated compound B1 to the content of all ethylenically unsaturated compounds is preferably 40% by weight or more, more preferably 50% by weight or more, even more preferably 55% by weight or more, and particularly preferably 60% by weight or more, in terms of superior resolution. In terms of peelability, the ratio of the content of ethylenically unsaturated compound B1 to the content of all ethylenically unsaturated compounds is preferably 99% by weight or less, more preferably 95% by weight or less, even more preferably 90% by weight or less, and particularly preferably 85% by weight or less.

Examples of the aromatic ring contained in the ethylenically unsaturated compound B1 include aromatic hydrocarbon rings such as a benzene ring, a naphthalene ring, and an anthracene ring; aromatic heterocycles such as a thiophene ring, a furan ring, a pyrrole ring, an imidazole ring, a triazole ring, and a pyridine ring; and fused rings thereof. An aromatic hydrocarbon ring is preferred, and a benzene ring is more preferred. The aromatic ring may have a substituent. The ethylenically unsaturated compound B1 may have one or more aromatic rings.

The ethylenically unsaturated compound B1 preferably has a bisphenol structure, as this improves resolution by suppressing swelling of the photosensitive layer caused by the developer. Examples of bisphenol structures include the bisphenol A structure derived from bisphenol A (2,2-bis(4-hydroxyphenyl)propane), the bisphenol F structure derived from bisphenol F (2,2-bis(4-hydroxyphenyl)methane), and the bisphenol B structure derived from bisphenol B (2,2-bis(4-hydroxyphenyl)butane), with the bisphenol A structure being preferred.

Examples of ethylenically unsaturated compounds B1 having a bisphenol structure include compounds having a bisphenol structure and two polymerizable groups (preferably (meth)acryloyl groups) attached to both ends of the bisphenol structure. The two polymerizable groups may be directly bonded to both ends of the bisphenol structure, or may be bonded via one or more alkyleneoxy groups. The alkyleneoxy groups attached to both ends of the bisphenol structure are preferably ethyleneoxy groups or propyleneoxy groups, and more preferably ethyleneoxy groups. The number of alkyleneoxy groups attached to the bisphenol structure is not particularly limited, but is preferably 4 to 16, and more preferably 6 to 14, per molecule. Ethylenically unsaturated compounds B1 having a bisphenol structure are described in paragraphs [0072] to [0080] of JP 2016-224162 A, the contents of which are incorporated herein by reference.

As the ethylenically unsaturated compound B1, a bifunctional ethylenically unsaturated compound having a bisphenol A structure is preferred, and 2,2-bis(4-((meth)acryloxypolyalkoxy)phenyl)propane is more preferred. Examples of 2,2-bis(4-((meth)acryloxypolyalkoxy)phenyl)propane include 2,2-bis(4-(methacryloxydiethoxy)phenyl)propane (FA-324M, manufactured by Hitachi Chemical Co., Ltd.), 2,2-bis(4-(methacryloxyethoxypropoxy)phenyl)propane, 2,2-bis(4-(methacryloxypentaethoxy)phenyl)propane (BPE-500, manufactured by Shin-Nakamura Chemical Co., Ltd.), and 2,2-bis(4-(methacryloxydodecaethoxy)phenyl)propane. Examples include 2,2-bis(4-(methacryloxypentadecaethoxy)phenyl)propane (FA-3200MY, manufactured by Hitachi Chemical Co., Ltd.), 2,2-bis(4-(methacryloxypentadecaethoxy)phenyl)propane (BPE-1300, manufactured by Shin-Nakamura Chemical Co., Ltd.), 2,2-bis(4-(methacryloxydiethoxy)phenyl)propane (BPE-200, manufactured by Shin-Nakamura Chemical Co., Ltd.), and ethoxylated (10) bisphenol A diacrylate (NK Ester A-BPE-10, manufactured by Shin-Nakamura Chemical Co., Ltd.).

From the viewpoints of the delay time line width change, the development temperature line width change, and sensitivity, it is preferable that the ethylenically unsaturated compound B1 includes a compound represented by the following formula (Bis):

In formula (Bis), _R1 and _R2 each independently represent a hydrogen atom or a methyl group, _{A is C2H4 ,} B is _C3H6 , _n1 and _n3 each independently represent an integer from 1 to ₃₉ , and _n1 + _n3 is an integer from 2 to 40, _n2 and _n4 each independently represent an integer from 0 to 29, and _n2 + _n4 is an integer from 0 to 30, and the arrangement of the -(A-O)- and -(B-O)- repeating units may be random or block. In the case of a block, either -(A-O)- or -(B-O)- may be on the bisphenol structure side. In one embodiment, _n1 + _n2 + _n3 + _n4 is preferably an integer from 2 to 20, more preferably an integer from 2 to 16, and even more preferably an integer from 4 to 12. Furthermore, n ₂ +n ₄ is preferably an integer of 0 to 10, more preferably an integer of 0 to 4, even more preferably an integer of 0 to 2, and particularly preferably 0.

The photosensitive layer may contain one or more ethylenically unsaturated compounds B1. The content of ethylenically unsaturated compounds B1 in the photosensitive layer is preferably 10% by weight or more, and more preferably 20% by weight or more, relative to the total weight of the photosensitive layer, in order to achieve better resolution. There is no particular upper limit, but in order to achieve better transferability and edge fuse resistance, it is preferably 70% by weight or less, and more preferably 60% by weight or less.

The photosensitive layer may contain an ethylenically unsaturated compound other than ethylenically unsaturated compound B1. The ethylenically unsaturated compound other than ethylenically unsaturated compound B1 is not particularly limited and can be appropriately selected from known compounds. Examples include compounds having one ethylenically unsaturated group in one molecule (monofunctional ethylenically unsaturated compounds), bifunctional ethylenically unsaturated compounds without an aromatic ring, and trifunctional or higher ethylenically unsaturated compounds.

Examples of monofunctional ethylenically unsaturated compounds include ethyl (meth)acrylate, ethylhexyl (meth)acrylate, 2-(meth)acryloyloxyethyl succinate, polyethylene glycol mono(meth)acrylate, polypropylene glycol mono(meth)acrylate, and phenoxyethyl (meth)acrylate.

Examples of bifunctional ethylenically unsaturated compounds without an aromatic ring include alkylene glycol di(meth)acrylate, polyalkylene glycol di(meth)acrylate, urethane di(meth)acrylate, and trimethylolpropane diacrylate.

Examples of alkylene glycol di(meth)acrylates include tricyclodecane dimethanol diacrylate (A-DCP, manufactured by Shin-Nakamura Chemical Co., Ltd.), tricyclodecane dimethanol dimethacrylate (DCP, manufactured by Shin-Nakamura Chemical Co., Ltd.), 1,9-nonanediol diacrylate (A-NOD-N, manufactured by Shin-Nakamura Chemical Co., Ltd.), 1,6-hexanediol diacrylate (A-HD-N, manufactured by Shin-Nakamura Chemical Co., Ltd.), ethylene glycol dimethacrylate, 1,10-decanediol diacrylate, and neopentyl glycol di(meth)acrylate.

Examples of polyalkylene glycol di(meth)acrylates include polyethylene glycol di(meth)acrylate, dipropylene glycol diacrylate, tripropylene glycol diacrylate, and polypropylene glycol di(meth)acrylate.

Examples of urethane di(meth)acrylates include propylene oxide-modified urethane di(meth)acrylates and ethylene oxide and propylene oxide-modified urethane di(meth)acrylates. Commercially available urethane di(meth)acrylates include 8UX-015A (manufactured by Taisei Fine Chemical Co., Ltd.), UA-32P (manufactured by Shin-Nakamura Chemical Co., Ltd.), and UA-1100H (manufactured by Shin-Nakamura Chemical Co., Ltd.).

Examples of tri- or higher functional ethylenically unsaturated compounds include dipentaerythritol (tri/tetra/penta/hexa)(meth)acrylate, pentaerythritol (tri/tetra)(meth)acrylate, trimethylolpropane tri(meth)acrylate, ditrimethylolpropane tetra(meth)acrylate, trimethylolethane tri(meth)acrylate, isocyanuric acid tri(meth)acrylate, glycerin tri(meth)acrylate, and alkylene oxide-modified versions of these. "(Tri/tetra/penta/hexa)(meth)acrylate" encompasses tri(meth)acrylate, tetra(meth)acrylate, penta(meth)acrylate, and hexa(meth)acrylate, while "(tri/tetra)(meth)acrylate" encompasses tri(meth)acrylate and tetra(meth)acrylate. In one embodiment, the photosensitive layer preferably contains the above-described ethylenically unsaturated compound B1 and a trifunctional or higher ethylenically unsaturated compound, and more preferably contains the above-described ethylenically unsaturated compound B1 and two or more trifunctional or higher ethylenically unsaturated compounds. The mass ratio of the ethylenically unsaturated compound B1 to the trifunctional or higher ethylenically unsaturated compounds is preferably (total mass of the ethylenically unsaturated compound B1):(total mass of the trifunctional or higher ethylenically unsaturated compounds) = 1:1 to 5:1, more preferably 1.2:1 to 4:1, and even more preferably 1.5:1 to 3:1. In another embodiment, the photosensitive layer preferably contains the above-described ethylenically unsaturated compound B1 and two or more trifunctional ethylenically unsaturated compounds.

Examples of alkylene oxide-modified trifunctional or higher ethylenically unsaturated compounds include caprolactone-modified (meth)acrylate compounds (such as KAYARAD (registered trademark) DPCA-20 manufactured by Nippon Kayaku Co., Ltd. and A-9300-1CL manufactured by Shin-Nakamura Chemical Co., Ltd.), alkylene oxide-modified (meth)acrylate compounds (such as KAYARAD RP-1040 manufactured by Nippon Kayaku Co., Ltd., ATM-35E and A-9300 manufactured by Shin-Nakamura Chemical Co., Ltd., and EBECRYL (registered trademark) 135 manufactured by Daicel-Allnex Corporation), ethoxylated glycerin triacrylate (such as A-GLY-9E manufactured by Shin-Nakamura Chemical Co., Ltd.), ARONIX (registered trademark) TO-2349 (manufactured by Toagosei Co., Ltd.), ARONIX M-520 (manufactured by Toagosei Co., Ltd.), and ARONIX M-510 (manufactured by Toagosei Co., Ltd.).

In addition, as an ethylenically unsaturated compound other than ethylenically unsaturated compound B1, an ethylenically unsaturated compound having an acid group described in paragraphs 0025 to 0030 of JP-A 2004-239942 may be used.

From the viewpoint of resolution and linearity, the ratio of the ethylenically unsaturated compound content to the polymer (preferably alkali-soluble resin) content in the photosensitive layer is preferably 1.0 or less, more preferably 0.9 or less, and even more preferably 0.5 to 0.9, by mass.

From the viewpoints of curability and resolution, the ethylenically unsaturated compound in the photosensitive layer preferably contains a (meth)acrylic compound, and more preferably contains a (meth)acrylate compound. From the viewpoints of curability, resolution, and linearity, the ethylenically unsaturated compound in the photosensitive layer more preferably contains a (meth)acrylic compound, and the content of the acrylic compound relative to the total weight of the (meth)acrylic compounds contained in the photosensitive layer is more preferably 60% by weight or less.

The molecular weight of the ethylenically unsaturated compound (or, if it has a distribution, the weight average molecular weight (Mw)) is preferably 200 to 3,000, more preferably 280 to 2,200, and even more preferably 300 to 2,200.

The photosensitive layer may contain one or more polymerizable compounds. The content of the polymerizable compounds in the photosensitive layer is preferably 10% to 70% by weight, more preferably 20% to 60% by weight, and even more preferably 20% to 50% by weight, relative to the total weight of the photosensitive layer.

- Polymerization initiator -
The photosensitive layer (preferably a negative photosensitive layer) preferably contains a polymerization initiator. The type of polymerization initiator is selected depending on the type of polymerization reaction, and examples thereof include a thermal polymerization initiator and a photopolymerization initiator. Examples of the polymerization initiator include a radical polymerization initiator and a cationic polymerization initiator.

The photosensitive layer (preferably a negative-type photosensitive layer) preferably contains a photopolymerization initiator. A photopolymerization initiator is a compound that initiates polymerization of a polymerizable compound when exposed to actinic rays such as ultraviolet light, visible light, or X-rays. There are no particular restrictions on the photopolymerization initiator, and any known photopolymerization initiator can be used. Examples of photopolymerization initiators include photoradical polymerization initiators and photocationic polymerization initiators, with photoradical polymerization initiators being preferred.

Examples of photoradical polymerization initiators include photopolymerization initiators having an oxime ester structure, photopolymerization initiators having an α-aminoalkylphenone structure, photopolymerization initiators having an α-hydroxyalkylphenone structure, photopolymerization initiators having an acylphosphine oxide structure, and photopolymerization initiators having an N-phenylglycine structure.

From the viewpoints of photosensitivity, visibility of exposed and unexposed areas, and resolution, the photosensitive layer (preferably a negative-type photosensitive layer) preferably contains at least one photoradical polymerization initiator selected from the group consisting of 2,4,5-triarylimidazole dimers and derivatives thereof. The two 2,4,5-triarylimidazole structures in the 2,4,5-triarylimidazole dimers and derivatives thereof may be the same or different. Examples of derivatives of 2,4,5-triarylimidazole dimer include 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer, 2-(o-chlorophenyl)-4,5-di(methoxyphenyl)imidazole dimer, 2-(o-fluorophenyl)-4,5-diphenylimidazole dimer, 2-(o-methoxyphenyl)-4,5-diphenylimidazole dimer, and 2-(p-methoxyphenyl)-4,5-diphenylimidazole dimer.

As the photoradical polymerization initiator, for example, the polymerization initiators described in paragraphs 0031 to 0042 of JP 2011-95716 A and paragraphs 0064 to 0081 of JP 2015-14783 A may be used.

Examples of photoradical polymerization initiators include ethyl dimethylaminobenzoate (DBE, CAS No. 10287-53-3), benzoin methyl ether, anisil (p,p'-dimethoxybenzyl), TAZ-110 (trade name, manufactured by Midori Chemical Co., Ltd.), benzophenone, TAZ-111 (trade name, manufactured by Midori Chemical Co., Ltd.), Irgacure OXE01, OXE02, OXE03, and OXE04 (manufactured by BASF), Omnirad 651 and 369 (trade names, manufactured by IGM Resins B.V.), and 2,2'-bis(2-chlorophenyl)-4,4',5,5'-tetraphenyl-1,2'-biimidazole (manufactured by Tokyo Chemical Industry Co., Ltd.).

Commercially available photoradical polymerization initiators include, for example, 1-[4-(phenylthio)phenyl]-1,2-octanedione-2-(O-benzoyloxime) (trade name: IRGACURE® OXE-01, manufactured by BASF), 1-[9-ethyl-6-(2-methylbenzoyl)-9H-carbazol-3-yl]ethanone-1-(O-acetyloxime) (trade name: IRGACURE OXE-02, manufactured by BASF), IRGACURE OXE-03 (manufactured by BASF), 2-(dimethylamino)-2-[(4-methylphenyl)methyl]-1-[4-(4-morpholinyl)phenyl]-1-butanone (trade name: Omnirad 379EG, manufactured by IGM Resins), B.V.), 2-methyl-1-(4-methylthiophenyl)-2-morpholinopropan-1-one (trade name: Omnirad 907, manufactured by IGM Resins B.V.), 2-hydroxy-1-{4-[4-(2-hydroxy-2-methylpropionyl)benzyl]phenyl}-2-methylpropan-1-one (trade name: Omnirad 127, manufactured by IGM Resins B.V.), 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)butanone-1 (trade name: Omnirad 369, manufactured by IGM Resins B.V.), 2-hydroxy-2-methyl-1-phenylpropan-1-one (trade name: Omnirad 1173, manufactured by IGM Resins B.V.), B.V.), 1-hydroxycyclohexyl phenyl ketone (trade name: Omnirad 184, manufactured by IGM Resins B.V.), 2,2-dimethoxy-1,2-diphenylethan-1-one (trade name: Omnirad 651, manufactured by IGM Resins B.V.), 2,4,6-trimethylbenzoyl-diphenylphosphine oxide (trade name: Omnirad TPO H, manufactured by IGM Resins B.V.), bis(2,4,6-trimethylbenzoyl)phenylphosphine oxide (trade name: Omnirad 819, manufactured by IGM Resins B.V.), oxime ester-based photopolymerization initiator (trade name: Lunar 6, manufactured by DKSH Japan Co., Ltd.), 2,2'-bis(2-chlorophenyl)-4,4',5,5'-tetraphenylbisimidazole (2-(2-chlorophenyl)-4,5-diphenylimidazole dimer) (trade name: B-CIM, manufactured by Hampford Chemical Industry Co., Ltd.), and 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer (trade name: BCTB, manufactured by Tokyo Chemical Industry Co., Ltd.), 2-(o-chlorophenyl)-4,5-diphenylimidazole dimer (trade name: BCTB, manufactured by Tokyo Chemical Industry Co., Ltd.), 1-[4-(phenylthio)phenyl]-3-cyclopentylpropane-1,2-dione-2-(O -benzoyloxime) (trade name: TR-PBG-305, manufactured by Changzhou Powerful Electronic New Materials Co., Ltd.), 1,2-propanedione, 3-cyclohexyl-1-[9-ethyl-6-(2-furanylcarbonyl)-9H-carbazol-3-yl]-, 2-(O-acetyloxime) (trade name: TR-PBG-326, manufactured by Changzhou Powerful Electronic New Materials Co., Ltd.), and 3-cyclohexyl-1-(6-(2-(benzoyloxyimino)hexanoyl)-9-ethyl-9H-carbazol-3-yl)-propane-1,2-dione-2-(O-benzoyloxime) (trade name: TR-PBG-391, manufactured by Changzhou Powerful Electronic New Materials Co., Ltd.).

A photocationic polymerization initiator (photoacid generator) is a compound that generates acid when exposed to actinic rays. A photocationic polymerization initiator is preferably a compound that responds to actinic rays with a wavelength of 300 nm or more, preferably 300 to 450 nm, and generates an acid, but there are no restrictions on its chemical structure. Furthermore, even if a photocationic polymerization initiator is not directly sensitive to actinic rays with a wavelength of 300 nm or more, it can be preferably used in combination with a sensitizer, as long as it responds to actinic rays with a wavelength of 300 nm or more and generates an acid when used in combination with a sensitizer.

As the cationic photopolymerization initiator, a cationic photopolymerization initiator that generates an acid with a pKa of 4 or less is preferred, a cationic photopolymerization initiator that generates an acid with a pKa of 3 or less is more preferred, and a cationic photopolymerization initiator that generates an acid with a pKa of 2 or less is particularly preferred. There is no particular lower limit for the pKa, but a value of -10.0 or greater is preferred, for example.

Examples of photocationic polymerization initiators include ionic photocationic polymerization initiators and nonionic photocationic polymerization initiators. Examples of ionic photocationic polymerization initiators include onium salt compounds such as diaryliodonium salts and triarylsulfonium salts, as well as quaternary ammonium salts. Examples of ionic photocationic polymerization initiators include the ionic photocationic polymerization initiators described in paragraphs [0114] to [0133] of JP 2014-85643 A. Examples of nonionic photocationic polymerization initiators include trichloromethyl-s-triazines, diazomethane compounds, imide sulfonate compounds, and oxime sulfonate compounds. Examples of trichloromethyl-s-triazines, diazomethane compounds, and imide sulfonate compounds include the compounds described in paragraphs [0083] to [0088] of JP 2011-221494 A. Additionally, the oxime sulfonate compound may be any of the compounds described in paragraphs 0084 to 0088 of WO 2018/179640.

The photosensitive layer may contain one or more polymerization initiators. The content of the polymerization initiator in the photosensitive layer is not particularly limited, but is preferably 0.1% by mass or more, more preferably 0.5% by mass or more, and even more preferably 1.0% by mass or more, relative to the total mass of the photosensitive layer. There is no particular upper limit, but it is preferably 10% by mass or less, more preferably 8% by mass or less, relative to the total mass of the photosensitive layer.

-Pigment-
From the viewpoints of the visibility of exposed and unexposed areas, the pattern visibility after development, and resolution, the photosensitive layer preferably contains a dye, and more preferably contains a dye (also simply referred to as "dye N") whose maximum absorption wavelength in the wavelength range of 400 nm to 780 nm during color development is 450 nm or longer and whose maximum absorption wavelength changes in response to an acid, a base, or a radical. When the photosensitive layer contains dye N, although the detailed mechanism is unknown, adhesion to adjacent layers (for example, a temporary support and an intermediate layer) is improved, resulting in better resolution.

In this disclosure, the expression "the maximum absorption wavelength of a dye changes in response to an acid, base, or radical" may refer to any of the following: a dye in a colored state that is decolorized by an acid, base, or radical; a dye in a decolorized state that develops color by an acid, base, or radical; and a dye in a colored state that changes to a colored state of another hue. Specifically, dye N may be a compound that changes from a decolorized state to develop color upon exposure, or a compound that changes from a colored state to decolorize upon exposure. In this case, the dye may change its colored or decolorized state upon exposure to an acid, base, or radical generated and acting within the photosensitive layer, or it may change its colored or decolorized state upon a change in the state (e.g., pH) within the photosensitive layer due to an acid, base, or radical. Alternatively, the dye may change its colored or decolorized state upon direct stimulation by an acid, base, or radical, without exposure.

Among these, from the viewpoints of the visibility of exposed and unexposed areas and resolution, dye N is preferably a dye whose maximum absorption wavelength changes in response to an acid or radical, and more preferably a dye whose maximum absorption wavelength changes in response to a radical.

From the viewpoints of visibility of exposed and unexposed areas and resolution, it is preferable that the photosensitive layer contain both a dye N whose maximum absorption wavelength changes in response to radicals, and a photoradical polymerization initiator.

Furthermore, from the viewpoint of visibility of exposed and unexposed areas, it is preferable that dye N be a dye that develops color in response to an acid, a base, or a radical.

An example of the color-developing mechanism of dye N in this disclosure is an embodiment in which a photoradical polymerization initiator, a cationic photopolymerization initiator (photoacid generator), or a photobase generator is added to the photosensitive layer, and after exposure, a radical-reactive dye, an acid-reactive dye, or a base-reactive dye (e.g., a leuco dye) develops color due to the radicals, acids, or bases generated from the photoradical polymerization initiator, cationic photopolymerization initiator, or photobase generator.

From the viewpoint of visibility of exposed and unexposed areas, dye N preferably has a maximum absorption wavelength of 550 nm or longer in the wavelength range of 400 nm to 780 nm when colored, more preferably 550 nm to 700 nm, and even more preferably 550 nm to 650 nm. Furthermore, dye N may have only one maximum absorption wavelength in the wavelength range of 400 nm to 780 nm when colored, or two or more maximum absorption wavelengths. If dye N has two or more maximum absorption wavelengths in the wavelength range of 400 nm to 780 nm when colored, it is sufficient that the maximum absorption wavelength with the highest absorbance among the two or more maximum absorption wavelengths is 450 nm or longer.

The maximum absorption wavelength of dye N is obtained by measuring the transmission spectrum of a solution containing dye N (liquid temperature 25°C) in the range of 400 nm to 780 nm using a spectrophotometer UV3100 (Shimadzu Corporation) in an atmospheric environment and detecting the wavelength at which the light intensity is minimum (maximum absorption wavelength).

Examples of dyes that develop or lose color upon exposure include leuco compounds. Examples of dyes that lose color upon exposure include leuco compounds, diarylmethane dyes, oxazine dyes, xanthene dyes, iminonaphthoquinone dyes, azomethine dyes, and anthraquinone dyes. From the perspective of visibility of exposed and unexposed areas, leuco compounds are preferred as dye N.

Examples of leuco compounds include leuco compounds having a triarylmethane skeleton (triarylmethane dyes), leuco compounds having a spiropyran skeleton (spiropyran dyes), leuco compounds having a fluoran skeleton (fluoran dyes), leuco compounds having a diarylmethane skeleton (diarylmethane dyes), leuco compounds having a rhodamine lactam skeleton (rhodamine lactam dyes), leuco compounds having an indolylphthalide skeleton (indolylphthalide dyes), and leuco compounds having a leucoauramine skeleton (leucoauramine dyes). Among these, triarylmethane dyes or fluoran dyes are preferred, and leuco compounds having a triphenylmethane skeleton (triphenylmethane dyes) or fluoran dyes are more preferred.

From the viewpoint of visibility of exposed and unexposed areas, the leuco compound preferably has a lactone ring, a sultine ring, or a sultone ring. This allows the lactone ring, sultine ring, or sultone ring of the leuco compound to react with radicals generated from a photoradical polymerization initiator or with an acid generated from a photocationic polymerization initiator, thereby converting the leuco compound into a closed ring state and discoloring, or converting the leuco compound into an open ring state and developing color. Leuco compounds are preferably compounds that have a lactone ring, a sultine ring, or a sultone ring and develop color upon ring-opening of the lactone ring, a sultine ring, or a sultone ring by radicals or an acid, and more preferably compounds that have a lactone ring and develop color upon ring-opening of the lactone ring by radicals or an acid.

Examples of pigment N include dyes. Examples of dyes include brilliant green, ethyl violet, methyl green, crystal violet, basic fuchsin, methyl violet 2B, quinaldine red, rose bengal, metanil yellow, thymolsulfophthalein, xylenol blue, methyl orange, paramethyl red, Congo red, benzopurpurin 4B, α-naphthyl red, Nile blue 2B, Nile blue A, methyl violet, malachite green, parafuchsin, Victoria Pure Blue naphthalene sulfonate, Victoria Pure Blue BOH (manufactured by Hodogaya Chemical Co., Ltd.), oil blue #603 (manufactured by Orient Chemical Industries Co., Ltd.), oil pink #312 (manufactured by Orient Chemical Industries Co., Ltd.), oil red 5B (manufactured by Orient Chemical Industries Co., Ltd.), and oil scarlet #308 (manufactured by Orient Chemical Industries Co., Ltd.). Examples of suitable anti-inflammatory agents include: Oil Red OG (Orient Chemical Industries Co., Ltd.), Oil Red RR (Orient Chemical Industries Co., Ltd.), Oil Green #502 (Orient Chemical Industries Co., Ltd.), Spiron Red BEH Special (Hodogaya Chemical Co., Ltd.), m-Cresol Purple, Cresol Red, Rhodamine B, Rhodamine 6G, Sulforhodamine B, Auramine, 4-p-diethylaminophenyliminonaphthoquinone, 2-carboxyanilino-4-p-diethylaminophenyliminonaphthoquinone, 2-carboxystearylamino-4-p-N,N-bis(hydroxyethyl)amino-phenyliminonaphthoquinone, 1-phenyl-3-methyl-4-p-diethylaminophenylimino-5-pyrazolone, and 1-β-naphthyl-4-p-diethylaminophenylimino-5-pyrazolone.

Examples of dye N include leuco compounds. Examples of leuco compounds include p,p',p"-hexamethyltriaminotriphenylmethane (leuco crystal violet), Pergascript Blue SRB (manufactured by Ciba-Geigy), crystal violet lactone, malachite green lactone, benzoyl leuco methylene blue, 2-(N-phenyl-N-methylamino)-6-(N-p-tolyl-N-ethyl)aminofluoran, 2-anilino-3-methyl-6-(N-ethyl-p-toluidino)fluoran, 3,6-dimethoxyfluoran, 3-(N,N-diethylamino)-5-methyl-7-(N,N-dibenzylamino)fluoran, and 3-(N-cyclohexyl-N-methylamino)- 6-methyl-7-anilinofluoran, 3-(N,N-diethylamino)-6-methyl-7-anilinofluoran, 3-(N,N-diethylamino)-6-methyl-7-xylidinofluoran, 3-(N,N-diethylamino)-6-methyl-7-chlorofluoran, 3-(N,N-diethylamino)-6-methoxy-7-aminofluoran, 3-(N,N-diethylamino)-7-(4-chloroanilino)fluoran, 3-(N,N-diethylamino)-7-chlorofluoran, 3-(N,N-diethylamino)-7-chlorofluoran, 3-(N,N-diethylamino)-7-benzylaminofluoran, 3-(N,N-diethylamino)-7,8-benzofluoran, 3-(N,N-dibutylamino)-6-methyl-7-anilinofluoran, 3-(N,N-dibutylamino)-6-methyl-7-xylidinofluoran, 3-piperidino-6-methyl-7-anilinofluoran, 3-pyrrolidino-6-methyl-7-anilinofluoran, 3,3-bis(1-ethyl-2-methylindol-3-yl)phthalide, 3,3-bis(1-n-butyl-2-methylindol-3-yl)phthalide These include 3',6'-bis(diphenylamino)spiroisobenzofuran-1(3H),9'-[9H]xanthen-3-one, 3,3-bis(p-dimethylaminophenyl)-6-dimethylaminophthalide, 3-(4-diethylamino-2-ethoxyphenyl)-3-(1-ethyl-2-methylindol-3-yl)-4-azaphthalide, 3-(4-diethylaminophenyl)-3-(1-ethyl-2-methylindol-3-yl)phthalide, and 3',6'-bis(diphenylamino)spiroisobenzofuran-1(3H),9'-[9H]xanthen-3-one.

From the viewpoints of visibility of exposed and unexposed areas, pattern visibility after development, and resolution, dye N is preferably a dye whose maximum absorption wavelength changes in response to radicals, and more preferably a dye that develops color in response to radicals.

Preferred dye N is leuco crystal violet, crystal violet lactone, brilliant green, or Victoria Pure Blue-naphthalenesulfonate.

The photosensitive layer may contain one or more dyes. From the viewpoints of visibility of exposed and unexposed areas, pattern visibility after development, and resolution, the dye content is preferably 0.1% by mass or more, more preferably 0.1% to 10% by mass, even more preferably 0.1% to 5% by mass, and particularly preferably 0.1% to 1% by mass, relative to the total mass of the photosensitive layer. Furthermore, from the viewpoints of visibility of exposed and unexposed areas, pattern visibility after development, and resolution, the dye N content is preferably 0.1% by mass or more, more preferably 0.1% to 10% by mass, even more preferably 0.1% to 5% by mass, and particularly preferably 0.1% to 1% by mass, relative to the total mass of the photosensitive layer.

The dye N content refers to the dye content when all of the dye N contained in the photosensitive layer is in a colored state. The following describes the method for quantifying the dye N content, using a dye that develops color through radicals as an example. Two solutions were prepared by dissolving 0.001 g or 0.01 g of dye in 100 mL of methyl ethyl ketone. The photoradical polymerization initiator Irgacure OXE01 (product name, manufactured by BASF) was added to each solution, and radicals were generated by irradiating with 365 nm light, causing all of the dye to develop color. The absorbance of each solution was then measured at 25°C under ambient conditions using a spectrophotometer (UV3100, manufactured by Shimadzu Corporation), and a calibration curve was created. Next, the absorbance of the solution in which all of the dye had developed color was measured using the same method as above, except that 3 g of the photosensitive layer was dissolved in methyl ethyl ketone instead of the dye. The content of dye contained in the photosensitive layer is calculated based on the absorbance of the obtained solution containing the photosensitive layer and the calibration curve.

-Thermal crosslinkable compound-
[0043] From the viewpoints of the strength of the cured film obtained and the adhesiveness of the uncured film obtained, the photosensitive layer preferably contains a thermally crosslinkable compound. Note that a thermally crosslinkable compound having an ethylenically unsaturated group, which will be described later, is not considered an ethylenically unsaturated compound but is considered a thermally crosslinkable compound.

Examples of thermally crosslinkable compounds include methylol compounds and blocked isocyanate compounds. Among these, blocked isocyanate compounds are preferred from the viewpoints of the strength of the resulting cured film and the adhesiveness of the resulting uncured film. Because blocked isocyanate compounds react with hydroxyl and carboxyl groups, when, for example, an alkali-soluble resin and/or an ethylenically unsaturated compound contains at least one of a hydroxyl group and a carboxyl group, the hydrophilicity of the resulting film tends to decrease, thereby enhancing the functionality of the film obtained by curing the photosensitive layer when used as a protective film. Note that a blocked isocyanate compound refers to a compound having a structure in which the isocyanate group of an isocyanate is protected (i.e., masked) with a blocking agent.

The dissociation temperature of the blocked isocyanate compound is not particularly limited, but is preferably 100°C to 160°C, and more preferably 130°C to 150°C. The dissociation temperature of the blocked isocyanate refers to the "temperature of the endothermic peak associated with the deprotection reaction of the blocked isocyanate when measured by DSC (Differential Scanning Calorimetry) analysis using a differential scanning calorimeter." A suitable differential scanning calorimeter that can be used, for example, is a differential scanning calorimeter (Model: DSC6200) manufactured by Seiko Instruments Inc. However, the differential scanning calorimeter is not limited to this.

Blocking agents with a dissociation temperature of 100°C to 160°C include active methylene compounds [malonic acid diesters (dimethyl malonate, diethyl malonate, di-n-butyl malonate, di-2-ethylhexyl malonate, etc.)] and oxime compounds (compounds having a -C(=N-OH)- structure in the molecule, such as formaldoxime, acetaldoxime, acetoxime, methyl ethyl ketoxime, and cyclohexanone oxime). Among these, blocking agents with a dissociation temperature of 100°C to 160°C preferably include oxime compounds, for example, from the standpoint of storage stability.

The blocked isocyanate compound preferably has an isocyanurate structure, for example, from the viewpoint of improving the brittleness of the film and improving adhesion to the transfer target. Blocked isocyanurate compounds having an isocyanurate structure can be obtained, for example, by protecting hexamethylene diisocyanate through isocyanuration. Among blocked isocyanurate compounds having an isocyanurate structure, compounds having an oxime structure in which an oxime compound is used as a blocking agent are preferred because they make it easier to adjust the dissociation temperature to a preferred range and reduce development residue compared to compounds without an oxime structure.

The blocked isocyanate compound may have a polymerizable group. There are no particular restrictions on the polymerizable group, and any known polymerizable group can be used. A radically polymerizable group is preferred. Examples of the polymerizable group include ethylenically unsaturated groups such as (meth)acryloxy groups, (meth)acrylamide groups, and styryl groups, as well as groups containing epoxy groups such as glycidyl groups. Among these, ethylenically unsaturated groups are preferred, with (meth)acryloxy groups being more preferred and acryloxy groups being even more preferred.

Commercially available blocked isocyanate compounds can be used. Examples of commercially available blocked isocyanate compounds include Karenz (registered trademark) AOI-BM, Karenz (registered trademark) MOI-BM, Karenz (registered trademark) MOI-BP, etc. (all manufactured by Showa Denko K.K.), and the blocked Duranate series (e.g., Duranate (registered trademark) TPA-B80E, Duranate (registered trademark) WT32-B75P, etc., manufactured by Asahi Kasei Chemicals Corporation). Compounds with the following structure can also be used as blocked isocyanate compounds.

The photosensitive layer may contain one or more thermally crosslinkable compounds. If the photosensitive layer contains a thermally crosslinkable compound, the content of the thermally crosslinkable compound is preferably 1% to 50% by weight, and more preferably 5% to 30% by weight, relative to the total weight of the photosensitive layer.

-Other ingredients-
The photosensitive layer may contain other components. Examples of the other components include a radical polymerization inhibitor, a surfactant, a sensitizer, and various additives. The photosensitive layer may contain one or more other components.

The photosensitive layer may contain a radical polymerization inhibitor. Examples of radical polymerization inhibitors include the thermal polymerization inhibitors described in paragraph 0018 of Japanese Patent No. 4,502,784. Among these, phenothiazine, phenoxazine, or 4-methoxyphenol are preferred. Other radical polymerization inhibitors include naphthylamine, cuprous chloride, nitrosophenylhydroxyamine aluminum salt, and diphenylnitrosamine. To avoid impairing the sensitivity of the photosensitive layer, it is preferable to use nitrosophenylhydroxyamine aluminum salt as the radical polymerization inhibitor.

The photosensitive layer may contain one or more radical polymerization inhibitors. When the photosensitive layer contains a radical polymerization inhibitor, the content of the radical polymerization inhibitor is preferably 0.001% to 5.0% by mass, more preferably 0.01% to 3.0% by mass, and even more preferably 0.02% to 2.0% by mass, relative to the total mass of the photosensitive layer. Furthermore, the content of the radical polymerization inhibitor is preferably 0.005% to 5.0% by mass, more preferably 0.01% to 3.0% by mass, and even more preferably 0.01% to 1.0% by mass, relative to the total mass of the polymerizable compounds.

The photosensitive layer may contain a surfactant. Examples of surfactants include those described in paragraph 0017 of Japanese Patent No. 4502784 and paragraphs 0060 to 0071 of JP-A-2009-237362. Furthermore, preferred surfactants are nonionic surfactants, fluorine-based surfactants, and silicone-based surfactants.

Nonionic surfactants include glycerol, trimethylolpropane, trimethylolethane, and their ethoxylates and propoxylates (e.g., glycerol propoxylate, glycerol ethoxylate, etc.), polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene oleyl ether, polyoxyethylene octylphenyl ether, polyoxyethylene nonylphenyl ether, polyethylene glycol dilaurate, polyethylene glycol distearate, sorbitan fatty acid esters, etc. Specific examples include Pluronic (trade names) L10, L31, L61, L62, 10R5, 17R2, and 25R2 (all manufactured by BASF), Tetronic (trade names) 304, 701, 704, 901, 904, and 150R1, and HYDROPALAT WE 3323 (all manufactured by BASF), Solsperse (trade name) 20000 (all manufactured by Lubrizol Japan Co., Ltd.), NCW-101, NCW-1001, NCW-1002 (all manufactured by Fujifilm Wako Pure Chemical Industries Co., Ltd.), Paionin (trade name) D-1105, D-6112, D-6112-W, D-6315 (all manufactured by Takemoto Oil & Fat Co., Ltd.), Olfine E1010, Surfynol 104, 400, 440 (all manufactured by Nissin Chemical Industry Co., Ltd.), and the like.

Commercially available fluorine-based surfactants include, for example, Megafac (trade name) F-171, F-172, F-173, F-176, F-177, F-141, F-142, F-143, F-144, F-437, F-444, F-475, F-477, F-479, F-482, F-551-A, F-552, F-554, F-555-A, F-556, F-557, F-558, F-559, F-560, F-561, F-565, F-563, F-568, F-575, F-780, EXP., MFS-330, EXP. MFS-578, EXP. MFS-578-2, EXP. MFS-579, EXP. MFS-586, EXP. MFS-587, EXP. MFS-628, EXP. MFS-631, EXP. MFS-603, R-41, R-41-LM, R-01, R-40, R-40-LM, RS-43, TF-1956, RS-90, R-94, RS-72-K, DS-21 (all manufactured by DIC Corporation), Fluorad (trade name) FC430, FC431, FC171 (all manufactured by Sumitomo 3M Limited), Surflon (trade name) S-382, SC-101, SC-103, SC-104, SC-105, SC-1068, Examples include SC-381, SC-383, S-393, KH-40 (all manufactured by AGC Inc.), PolyFox (trade name) PF636, PF656, PF6320, PF6520, PF7002 (all manufactured by OMNOVA), Futergent (trade name) 710FM, 610FM, 601AD, 601ADH2, 602A, 215M, 245F (all manufactured by NEOS Corporation), and U-120E (manufactured by Unichem Co., Ltd.).

Acrylic compounds that have a molecular structure with a functional group containing a fluorine atom and that volatilize when heated due to cleavage of the fluorine atom-containing functional group can also be suitably used as fluorosurfactants. Examples of such fluorosurfactants include the Megafac (product name) DS series manufactured by DIC Corporation (The Chemical Daily, February 22, 2016; The Nikkei Business Daily, February 23, 2016), such as Megafac (product name) DS-21.

It is also preferable to use, as the fluorosurfactant, a polymer of a fluorine atom-containing vinyl ether compound having a fluorinated alkyl group or a fluorinated alkylene ether group and a hydrophilic vinyl ether compound.

A block polymer can also be used as the fluorosurfactant. A fluorine-containing polymer compound containing a structural unit derived from a (meth)acrylate compound having a fluorine atom and a structural unit derived from a (meth)acrylate compound having two or more (preferably five or more) alkyleneoxy groups (preferably ethyleneoxy groups or propyleneoxy groups) can also be preferably used as the fluorosurfactant.

Fluorine-containing polymers with ethylenically unsaturated groups in the side chains can also be used as fluorine-based surfactants. Examples include Megafac (trade name) RS-101, RS-102, RS-718K, and RS-72-K (all manufactured by DIC Corporation).

As a fluorosurfactant, for example, a compound having a linear perfluoroalkyl group with seven or more carbon atoms may be used. However, from the perspective of improving environmental friendliness, it is preferable to use an alternative material to perfluorooctanoic acid (PFOA) or perfluorooctanesulfonic acid (PFOS) as the fluorosurfactant.

Silicone surfactants include linear polymers composed of siloxane bonds and modified siloxane polymers with organic groups introduced into the side chains or terminals. Specific examples of silicone surfactants include EXP. S-309-2, EXP. S-315, EXP. S-503-2, and EXP. S-505-2 (all manufactured by DIC Corporation), DOWSIL (trade name) 8032 ADDITIVE, Toray Silicone DC3PA, Toray Silicone SH7PA, Toray Silicone DC11PA, Toray Silicone SH21PA, Toray Silicone SH28PA, Toray Silicone SH29PA, Toray Silicone SH30PA, and Toray Silicone SH8400 (all manufactured by Dow Corning Toray Co., Ltd.), as well as X-22-4952, X-22-4272, and X-22-62. 66, KF-351A, K354L, KF-355A, KF-945, KF-640, KF-642, KF-643, X-22-6191, X-22-4515, KF-6004, KP-341, K F-6001, KF-6002, KP-101KP-103, KP-104, KP-105, KP-106, KP-109, KP-109, KP-112, KP-120, KP-121, KP-12 4, KP-125, KP-301, KP-306, KP-310, KP-322, KP-323, KP-327, KP-341, KP-368, KP-369, KP-611, KP-620, KP-621, KP-626, KP-652 (all manufactured by Shin-Etsu Chemical Co., Ltd.), F-4440, TSF-4300, TSF-4445, TSF-4460, TSF-4452 (all manufactured by Momentive Polymers Co., Ltd.) Examples include BYK300, BYK306, BYK307, BYK310, BYK320, BYK323, BYK325, BYK330, BYK313, BYK315N, BYK331, BYK333, BYK345, BYK347, BYK348, BYK349, BYK370, BYK377, BYK378, and BYK323 (all manufactured by BYK-Chemie).

The photosensitive layer may contain one or more surfactants. The surfactant content is preferably 0.001% to 10% by weight, and more preferably 0.01% to 3% by weight, relative to the total weight of the photosensitive layer.

The photosensitive layer may contain a sensitizer. There are no restrictions on the type of sensitizer, and known sensitizers, dyes, and pigments may be used. Examples of sensitizers include dialkylaminobenzophenone compounds, pyrazoline compounds, anthracene compounds, coumarin compounds, xanthone compounds, thioxanthone compounds, acridone compounds, oxazole compounds, benzoxazole compounds, thiazole compounds, benzothiazole compounds, triazole compounds (e.g., 1,2,4-triazole), stilbene compounds, triazine compounds, thiophene compounds, naphthalimide compounds, triarylamine compounds, and aminoacridine compounds.

The photosensitive layer may contain one or more sensitizers. When the photosensitive layer contains a sensitizer, the amount of sensitizer contained can be selected appropriately depending on the purpose. However, from the viewpoints of improving sensitivity to the light source and improving the curing rate through a balance between the polymerization rate and chain transfer, the amount is preferably 0.01% to 5% by weight, and more preferably 0.05% to 1% by weight, based on the total weight of the photosensitive layer.

The photosensitive layer may contain known additives as needed. Examples of additives include plasticizers, heterocyclic compounds, benzotriazoles, carboxybenzotriazoles, pyridines (such as isonicotinamide), purine bases (such as adenine), and solvents. The photosensitive layer may contain one or more additives.

Examples of benzotriazoles include 1,2,3-benzotriazole, 1-chloro-1,2,3-benzotriazole, bis(N-2-ethylhexyl)aminomethylene-1,2,3-benzotriazole, bis(N-2-ethylhexyl)aminomethylene-1,2,3-tolyltriazole, and bis(N-2-hydroxyethyl)aminomethylene-1,2,3-benzotriazole.

Examples of carboxybenzotriazoles include 4-carboxy-1,2,3-benzotriazole, 5-carboxy-1,2,3-benzotriazole, N-(N,N-di-2-ethylhexyl)aminomethylenecarboxybenzotriazole, N-(N,N-di-2-hydroxyethyl)aminomethylenecarboxybenzotriazole, and N-(N,N-di-2-ethylhexyl)aminoethylenecarboxybenzotriazole. Commercially available carboxybenzotriazoles, such as CBT-1 (trade name, Johoku Chemical Industry Co., Ltd.), can be used.

The total content of benzotriazoles and carboxybenzotriazoles is preferably 0.01% to 3% by weight, and more preferably 0.05% to 1% by weight, relative to the total weight of the photosensitive layer. A content of 0.01% by weight or more is preferred from the perspective of imparting storage stability to the photosensitive layer. On the other hand, a content of 3% by weight or less is preferred from the perspective of maintaining sensitivity and suppressing dye discoloration.

The photosensitive layer may contain at least one compound selected from the group consisting of plasticizers and heterocyclic compounds. Examples of plasticizers and heterocyclic compounds include the compounds described in paragraphs 0097 to 0103 and 0111 to 0118 of WO 2018/179640.

The photosensitive layer may contain a solvent. If the photosensitive layer is formed using a photosensitive composition that contains a solvent, the solvent may remain in the photosensitive layer.

The photosensitive layer may also contain known additives such as metal oxide particles, antioxidants, dispersants, acid multipliers, development accelerators, conductive fibers, thermal acid generators, ultraviolet absorbers, thickeners, crosslinkers, and organic or inorganic suspending agents.

Additives contained in the photosensitive layer are described in paragraphs 0165 to 0184 of JP 2014-85643 A, the contents of which are incorporated herein by reference.

The photosensitive layer may contain a predetermined amount of impurities. Specific examples of impurities include sodium, potassium, magnesium, calcium, iron, manganese, copper, aluminum, titanium, chromium, cobalt, nickel, zinc, tin, halogens, and their ions. Among these, halide ions, sodium ions, and potassium ions are prone to being mixed in as impurities, so the following contents are preferred.

The impurity content in the photosensitive layer is preferably 80 ppm or less by mass, more preferably 10 ppm or less, and even more preferably 2 ppm or less. The impurity content can be 1 ppb or more by mass, and may be 0.1 ppm or more.

Methods for keeping the impurity content within the above range include selecting raw materials for the composition that contain low impurities, preventing impurities from being mixed in when the photosensitive layer is made, and removing them by washing. These methods can keep the impurity content within the above range.

Impurities can be quantified using known methods, such as ICP (Inductively Coupled Plasma) emission spectroscopy, atomic absorption spectroscopy, and ion chromatography.

The content of compounds such as benzene, formaldehyde, trichloroethylene, 1,3-butadiene, carbon tetrachloride, chloroform, N,N-dimethylformamide, N,N-dimethylacetamide, and hexane in the photosensitive layer is preferably low. The content of these compounds relative to the total mass of the photosensitive layer is preferably 100 ppm or less, more preferably 20 ppm or less, and even more preferably 4 ppm or less, by mass. The lower limit, relative to the total mass of the photosensitive layer, can be 10 ppb or more, and can be 100 ppb or more. The content of these compounds can be reduced in the same manner as for the metal impurities described above. Furthermore, they can be quantified using known measurement methods.

From the viewpoint of improving reliability and lamination properties, the water content in the photosensitive layer is preferably 0.01% to 1.0% by mass, and more preferably 0.05% to 0.5% by mass.

The photosensitive layer may contain residual monomers corresponding to each structural unit of the alkali-soluble resin described above. From the standpoints of patterning ability and reliability, the content of residual monomers is preferably 5,000 ppm by mass or less, more preferably 2,000 ppm by mass or less, and even more preferably 500 ppm by mass or less, relative to the total mass of the alkali-soluble resin. There is no particular lower limit, but it is preferably 1 ppm by mass or more, and more preferably 10 ppm by mass or more. From the standpoints of patterning ability and reliability, the content of residual monomers of each structural unit of the alkali-soluble resin is preferably 3,000 ppm by mass or less, more preferably 600 ppm by mass or less, and even more preferably 100 ppm by mass or less, relative to the total mass of the photosensitive layer. There is no particular lower limit, but it is preferably 0.1 ppm by mass or more, and more preferably 1 ppm by mass or more.

When synthesizing an alkali-soluble resin through a polymer reaction, the amount of residual monomer is also preferably within the above range. For example, when synthesizing an alkali-soluble resin by reacting glycidyl acrylate with a carboxylic acid side chain, it is preferable to set the glycidyl acrylate content within the above range.

The amount of residual monomer can be measured using known methods such as liquid chromatography and gas chromatography.

The photosensitive layer may be a colored layer containing a pigment. The pigment may be selected appropriately to match the desired hue, and may be selected from black pigments, white pigments, and pigments of chromatic colors other than black and white. In particular, when forming a black pattern, a black pigment is preferably selected as the pigment.

As the black pigment, any known black pigment (such as an organic or inorganic pigment) can be appropriately selected as long as it does not impair the effects of the present disclosure. From the perspective of optical density, suitable black pigments include, for example, carbon black, titanium oxide, titanium carbide, iron oxide, titanium oxide, and graphite, with carbon black being particularly preferred. From the perspective of surface resistance, carbon black with at least a portion of its surface coated with a resin is preferred. From the perspective of dispersion stability, the particle size of the black pigment is preferably a number-average particle size of 0.001 μm to 0.1 μm, more preferably 0.01 μm to 0.08 μm. The particle size refers to the diameter of a circle with the same area as the pigment particle, calculated from a photograph of the pigment particle taken with an electron microscope. The number-average particle size is the average particle size obtained by calculating the particle size of 100 randomly selected particles and averaging the particle sizes of the 100 particles.

As for pigments other than black pigments, the white pigments described in paragraphs 0015 and 0114 of JP-A No. 2005-007765 can be used. Specifically, among the white pigments, inorganic pigments such as titanium oxide, zinc oxide, lithopone, precipitated calcium carbonate, white carbon, aluminum oxide, aluminum hydroxide, and barium sulfate are preferred, with titanium oxide or zinc oxide being more preferred, and titanium oxide being even more preferred. As inorganic pigments, rutile or anatase titanium oxide is more preferred, with rutile titanium oxide being particularly preferred.

The surface of titanium oxide may be treated with silica, alumina, titania, zirconia, or an organic substance, or may be treated with two or more of these treatments. This suppresses the catalytic activity of titanium oxide and improves heat resistance and light fading resistance. From the perspective of reducing the thickness of the photosensitive layer after heating, at least one of alumina treatment and zirconia treatment is preferred as the surface treatment for titanium oxide, with both alumina treatment and zirconia treatment being particularly preferred.

When the photosensitive layer is a colored layer, it is also preferable from the viewpoint of transferability that the photosensitive layer further contains a chromatic pigment other than a black pigment or a white pigment. When a chromatic pigment is contained, the particle size of the chromatic pigment is preferably 0.1 μm or less, and more preferably 0.08 μm or less, in terms of better dispersibility. Examples of chromatic pigments include Victoria Pure Blue BO (Color Index (hereinafter C.I.) 42595), Auramine (C.I. 41000), Fat Black HB (C.I. 26150), Monolight Yellow GT (C.I. Pigment Yellow 12), Permanent Yellow GR (C.I. Pigment Yellow 17), Permanent Yellow HR (C.I. Pigment Yellow 83), and Permanent Carmine FBB (C.I. Pigment Red). 146), Hosterbalm Red ESB (C.I. Pigment Violet 19), Permanent Ruby FBH (C.I. Pigment Red 11), Fastel Pink B Supra (C.I. Pigment Red 81), Monastral Fast Blue (C.I. Pigment Blue 15), Monolight Fast Black B (C.I. Pigment Black 1) and Carbon, C.I. Pigment Red 97, C.I. Pigment Red 122, C.I. Pigment Red 149, C.I. Pigment Red 168, C.I. Pigment Red 177, C.I. Pigment Red 180, C.I. Pigment Red 192, C.I. Pigment Red 215, C.I. Examples of suitable pigments include C.I. Pigment Green 7, C.I. Pigment Blue 15:1, C.I. Pigment Blue 15:4, C.I. Pigment Blue 22, C.I. Pigment Blue 60, C.I. Pigment Blue 64, and C.I. Pigment Violet 23. Of these, C.I. Pigment Red 177 is preferred.

When the photosensitive layer contains a pigment, the pigment content is preferably more than 3% by mass and not more than 40% by mass, more preferably more than 3% by mass and not more than 35% by mass, even more preferably more than 5% by mass and not more than 35% by mass, and particularly preferably 10% by mass or more and not more than 35% by mass, relative to the total mass of the photosensitive layer.

When the photosensitive layer contains pigments other than black pigments (white pigments and chromatic pigments), the content of the pigments other than black pigments is preferably 30% by mass or less, more preferably 1% to 20% by mass, and even more preferably 3% to 15% by mass, relative to the black pigment.

In the method for producing a photosensitive layer containing a black pigment, the black pigment (preferably carbon black) is preferably introduced into the photosensitive composition described below in the form of a pigment dispersion. The dispersion may be prepared by premixing the black pigment and pigment dispersant, adding the resulting mixture to an organic solvent (or vehicle), and dispersing the mixture using a disperser. The pigment dispersant can be selected based on the pigment and solvent; for example, commercially available dispersants can be used. The vehicle refers to the medium in which the pigment is dispersed when the pigment dispersion is prepared. It is liquid and includes a binder component that maintains the black pigment in a dispersed state and a solvent component (organic solvent) that dissolves and dilutes the binder component. There are no particular limitations on the disperser, and examples include known dispersers such as a kneader, roll mill, attritor, super mill, dissolver, homomixer, and sand mill. Furthermore, fine pulverization using frictional force by mechanical grinding may also be used. For information on dispersers and fine grinding, please refer to the descriptions in "Pigment Encyclopedia" (by Asakura Kunizo, 1st edition, Asakura Shoten, 2000, pp. 438, 310).

From the viewpoints of developability and resolution, the average thickness of the photosensitive layer is preferably 20 μm or less, more preferably 10 μm or less, even more preferably 8 μm or less, and particularly preferably 5 μm or less. The average thickness of the photosensitive layer is preferably 0.5 μm or more, more preferably 1 μm or more. The average thickness of the photosensitive layer is calculated as the arithmetic average of the thicknesses measured at five locations by cross-sectional observation using a scanning electron microscope (SEM).

When the transfer layer has a multi-layer structure, from the viewpoints of resolution and ability to follow unevenness, the ratio of the average thickness of the photosensitive layer to the average thickness of the transfer layer is preferably 10% to 50%, more preferably 15% to 35%, and even more preferably 20% to 30%.

From the viewpoint of adhesion, the transmittance of the photosensitive layer at a wavelength of 365 nm is preferably 10% or more, more preferably 30% or more, and even more preferably 50% or more. There is no particular upper limit, but a value of 99.9% or less is preferred.

There are no limitations on the method for producing the photosensitive layer, as long as the desired photosensitive layer is obtained. For example, the photosensitive layer can be formed by preparing a photosensitive composition containing an alkali-soluble resin, an ethylenically unsaturated compound, a photopolymerization initiator, and a solvent, applying the photosensitive composition to an object such as a temporary support, and drying the coating of the photosensitive composition. The photosensitive layer may also be formed by applying the photosensitive composition to a protective film described below and drying it.

Examples of photosensitive compositions used to form the photosensitive layer include compositions containing an alkali-soluble resin, an ethylenically unsaturated compound, a photopolymerization initiator, the optional components described above, and a solvent. The photosensitive composition preferably contains a solvent to adjust the viscosity of the photosensitive composition and facilitate the formation of the photosensitive layer.

Examples of solvents contained in the photosensitive composition include alkylene glycol ether solvents, alkylene glycol ether acetate solvents, alcohol solvents (such as methanol and ethanol), ketone solvents (such as acetone and methyl ethyl ketone), aromatic hydrocarbon solvents (such as toluene), aprotic polar solvents (such as N,N-dimethylformamide), cyclic ether solvents (such as tetrahydrofuran), ester solvents, amide solvents, lactone solvents, and mixed solvents containing two or more of these.

The photosensitive composition preferably contains at least one solvent selected from the group consisting of alkylene glycol ether solvents and alkylene glycol ether acetate solvents. Of these, a mixed solvent containing at least one solvent selected from the group consisting of alkylene glycol ether solvents and alkylene glycol ether acetate solvents and at least one solvent selected from the group consisting of ketone solvents and cyclic ether solvents is more preferred, and a mixed solvent containing at least three solvents: at least one solvent selected from the group consisting of alkylene glycol ether solvents and alkylene glycol ether acetate solvents, a ketone solvent, and a cyclic ether solvent is even more preferred.

Examples of alkylene glycol ether solvents include ethylene glycol monoalkyl ethers, ethylene glycol dialkyl ethers, propylene glycol monoalkyl ethers, propylene glycol dialkyl ethers, diethylene glycol dialkyl ethers, dipropylene glycol monoalkyl ethers, and dipropylene glycol dialkyl ethers.

Examples of alkylene glycol ether acetate solvents include ethylene glycol monoalkyl ether acetate, propylene glycol monoalkyl ether acetate, diethylene glycol monoalkyl ether acetate, and dipropylene glycol monoalkyl ether acetate.

Solvents that may be used include those described in paragraphs 0092 to 0094 of WO 2018/179640 and paragraph 0014 of JP 2018-177889 A, the contents of which are incorporated herein by reference.

The photosensitive composition may contain one or more solvents. The content of the solvent when applying the photosensitive composition is preferably 50 to 1,900 parts by weight, and more preferably 100 to 900 parts by weight, per 100 parts by weight of the total solids content in the photosensitive composition.

The method for preparing the photosensitive composition is not particularly limited. For example, a method may be used in which each component is dissolved in the above-mentioned solvent to prepare a solution, and the resulting solutions are mixed in a predetermined ratio to prepare the photosensitive composition. The photosensitive composition is preferably filtered using a filter with a pore size of 0.2 μm to 30 μm before forming the photosensitive layer.

The method for applying the photosensitive composition is not particularly limited, and any known method may be used. Examples of application methods include slit coating, spin coating, curtain coating, and inkjet coating.

Heat drying and vacuum drying are preferred methods for drying a coating of the photosensitive composition. In this specification, "drying" refers to removing at least a portion of the solvent contained in the composition. Examples of drying methods include natural drying, heat drying, and vacuum drying. These methods can be used alone or in combination. The drying temperature is preferably 80°C or higher, more preferably 90°C or higher. The upper limit is preferably 130°C or lower, more preferably 120°C or lower. Drying can also be performed by continuously changing the temperature. The drying time is preferably 20 seconds or longer, more preferably 40 seconds or longer, and even more preferably 60 seconds or longer. There is no particular upper limit, but 600 seconds or shorter is preferred, and 300 seconds or shorter is more preferred.

(middle class)
The transfer layer preferably includes an intermediate layer. The intermediate layer prevents air bubbles from being mixed in between the transfer layer and the object when the transfer film and the object are bonded together, thereby improving the adhesion between the transfer layer and the object. The intermediate layer can also improve the conformability of the transfer layer to an object with a rough surface. The intermediate layer is preferably disposed between the temporary support and the photosensitive layer. That is, the transfer film preferably includes a temporary support, an intermediate layer, and a photosensitive layer in this order.

The intermediate layer may have a single-layer structure or a multi-layer structure. Examples of intermediate layers include a thermoplastic resin layer and a water-soluble resin layer. When the intermediate layer includes both a thermoplastic resin layer and a water-soluble resin layer, the transfer film preferably includes a temporary support, a thermoplastic resin layer, a water-soluble resin layer, and a photosensitive layer, in that order. Other examples of intermediate layers include an oxygen-blocking layer with oxygen-blocking properties, such as the "separation layer" described in JP-A-5-72724. When the intermediate layer is an oxygen-blocking layer, sensitivity during exposure is improved, the time load on the exposure machine is reduced, and productivity is improved.

-Thermoplastic resin layer-
The thermoplastic resin layer preferably contains an alkali-soluble resin as the thermoplastic resin, such as an acrylic resin, a polystyrene resin, a styrene-acrylic copolymer, a polyurethane resin, a polyvinyl alcohol, a polyvinyl formal, a polyamide resin, a polyester resin, an epoxy resin, a polyacetal resin, a polyhydroxystyrene resin, a polyimide resin, a polybenzoxazole resin, a polysiloxane resin, polyethyleneimine, a polyallylamine, and a polyalkylene glycol.

The alkali-soluble resin is preferably an acrylic resin from the viewpoints of developability and adhesion to adjacent layers. The acrylic resin refers to a resin having at least one structural unit selected from the group consisting of structural units derived from (meth)acrylic acid, structural units derived from (meth)acrylic acid esters, and structural units derived from (meth)acrylic acid amides. The acrylic resin preferably has a total content of structural units derived from (meth)acrylic acid, structural units derived from (meth)acrylic acid esters, and structural units derived from (meth)acrylic acid amides of 50% by mass or more relative to the total mass of the acrylic resin.
In particular, the total content of the structural units derived from (meth)acrylic acid and the structural units derived from (meth)acrylic acid esters is preferably 30% by mass to 100% by mass, and more preferably 50% by mass to 100% by mass, relative to the total mass of the acrylic resin.

The alkali-soluble resin is preferably a polymer having an acid group. Examples of the acid group include a carboxy group, a sulfo group, a phosphate group, and a phosphonate group, with a carboxy group being preferred.

From the standpoint of developability, the alkali-soluble resin is preferably an alkali-soluble resin with an acid value of 60 mgKOH/g or more, and more preferably a carboxyl group-containing acrylic resin with an acid value of 60 mgKOH/g or more. There is no particular upper limit for the acid value of the alkali-soluble resin, but it is preferably 200 mgKOH/g or less, and more preferably 150 mgKOH/g or less.

The carboxyl group-containing acrylic resin with an acid value of 60 mgKOH/g or more is not particularly limited and can be appropriately selected from known resins. Examples include alkali-soluble resins that are carboxyl group-containing acrylic resins with an acid value of 60 mgKOH/g or more among the polymers described in paragraph 0025 of JP 2011-95716 A, carboxyl group-containing acrylic resins with an acid value of 60 mgKOH/g or more among the polymers described in paragraphs 0033 to 0052 of JP 2010-237589 A, and carboxyl group-containing acrylic resins with an acid value of 60 mgKOH/g or more among the alkali-soluble resins described in paragraphs 0053 to 0068 of JP 2016-224162 A.

The copolymerization ratio of structural units having carboxy groups in the carboxy group-containing acrylic resin is preferably 5% to 50% by mass, more preferably 10% to 40% by mass, and even more preferably 12% to 30% by mass, relative to the total mass of the acrylic resin.

As the alkali-soluble resin, from the viewpoints of developability and adhesion to adjacent layers, acrylic resins having structural units derived from (meth)acrylic acid are particularly preferred.

The alkali-soluble resin may have a reactive group. The reactive group may be a polymerizable group, such as a group capable of addition polymerization, polycondensation, or polyaddition, and examples thereof include ethylenically unsaturated groups; polycondensation groups such as hydroxy groups and carboxy groups; and polyaddition reactive groups such as epoxy groups and (blocked) isocyanate groups.

The weight-average molecular weight (Mw) of the alkali-soluble resin is preferably 1,000 or more, more preferably 10,000 to 100,000, and even more preferably 20,000 to 50,000.

The thermoplastic resin layer may contain one or more alkali-soluble resins. From the viewpoints of developability and adhesion to adjacent layers, the content of the alkali-soluble resin is preferably 10% to 99% by mass, more preferably 20% to 90% by mass, even more preferably 40% to 80% by mass, and particularly preferably 50% to 70% by mass, relative to the total mass of the thermoplastic resin layer.

The thermoplastic resin layer preferably contains a dye (also simply referred to as "dye B") whose maximum absorption wavelength during color development in the wavelength range of 400 nm to 780 nm is 450 nm or longer and whose maximum absorption wavelength changes in response to an acid, base, or radical. Preferred aspects of dye B are the same as those of dye N, except for the points described below.

From the viewpoints of visibility and resolution of exposed and unexposed areas, dye B is preferably a dye whose maximum absorption wavelength changes in response to acid or radicals, and more preferably a dye whose maximum absorption wavelength changes in response to acid. From the viewpoints of visibility and resolution of exposed and unexposed areas, the thermoplastic resin layer preferably contains both a dye whose maximum absorption wavelength changes in response to acid as dye B, and a compound that generates acid when exposed to light, as described below.

The thermoplastic resin layer may contain one or more types of dye B. From the viewpoint of visibility of exposed and unexposed areas, the content of dye B is preferably 0.2% by mass or more, more preferably 0.2% to 6% by mass, even more preferably 0.2% to 5% by mass, and particularly preferably 0.25% to 3.0% by mass, based on the total mass of the thermoplastic resin layer. The content of dye B refers to the content of dye when all of the dye B contained in the thermoplastic resin layer is in a color-developing state. Below, a method for quantifying the content of dye B is explained using a dye that develops color in response to radicals as an example. Two types of solutions are prepared by dissolving 0.001 g or 0.01 g of dye in 100 mL of methyl ethyl ketone. The photoradical polymerization initiator Irgacure OXE01 (product name, manufactured by BASF) is added to each of the resulting solutions, and radicals are generated by irradiating the solutions with 365 nm light, causing all of the dyes to develop color. The absorbance of each solution at a liquid temperature of 25°C was then measured in an atmospheric environment using a spectrophotometer (UV3100, manufactured by Shimadzu Corporation), and a calibration curve was created. Next, the absorbance of the solution in which all the dye had developed color was measured using the same method as above, except that 0.1 g of thermoplastic resin layer was dissolved in methyl ethyl ketone instead of the dye. The amount of dye contained in the thermoplastic resin layer was calculated based on the calibration curve from the absorbance of the resulting solution containing the thermoplastic resin layer.

The thermoplastic resin layer may contain a compound that generates an acid, a base, or a radical when exposed to light (also simply referred to as "compound C"). Compound C is preferably a compound that generates an acid, a base, or a radical when exposed to actinic light such as ultraviolet light or visible light. Known photoacid generators, photobase generators, and photoradical polymerization initiators (photoradical generators) can be used as compound C. Of these, photoacid generators are preferred.

From the viewpoint of resolution, the thermoplastic resin layer preferably contains a photoacid generator. Examples of photoacid generators include the cationic photopolymerization initiators that may be contained in the photosensitive layer described above, and preferred aspects are the same as those described below.

From the viewpoints of sensitivity and resolution, the photoacid generator preferably contains at least one compound selected from the group consisting of onium salt compounds and oxime sulfonate compounds, and from the viewpoints of sensitivity, resolution, and adhesion, it is more preferable to contain an oxime sulfonate compound. Furthermore, photoacid generators having the following structure are also preferred.

The thermoplastic resin layer may contain a photoradical polymerization initiator. Examples of photoradical polymerization initiators include the photoradical polymerization initiators that may be contained in the photosensitive layer described above, and preferred embodiments are also the same.

The thermoplastic resin layer may contain a photobase generator. The photobase generator is not particularly limited as long as it is a known photobase generator, and examples thereof include 2-nitrobenzyl cyclohexyl carbamate, triphenylmethanol, O-carbamoylhydroxylamide, O-carbamoyloxime, {[(2,6-dinitrobenzyl)oxy]carbonyl}cyclohexylamine, bis{[(2-nitrobenzyl)oxy]carbonyl}hexane-1,6-diamine, 4-(methylthiobenzoyl)-1-methyl-1-morpholinoethane, and (4-morpholinobenzoyl) -1-benzyl-1-dimethylaminopropane, N-(2-nitrobenzyloxycarbonyl)pyrrolidine, hexaamminecobalt(III) tris(triphenylmethylborate), 2-benzyl-2-dimethylamino-1-(4-morpholinophenyl)butanone, 2,6-dimethyl-3,5-diacetyl-4-(2-nitrophenyl)-1,4-dihydropyridine, and 2,6-dimethyl-3,5-diacetyl-4-(2,4-dinitrophenyl)-1,4-dihydropyridine.

The thermoplastic resin layer may contain one or more types of compound C. From the viewpoint of visibility and resolution of exposed and unexposed areas, the content of compound C is preferably 0.1% by mass to 10% by mass, and more preferably 0.5% by mass to 5% by mass, relative to the total mass of the thermoplastic resin layer.

The thermoplastic resin layer preferably contains a plasticizer from the viewpoints of resolution, adhesion to adjacent layers, and developability.

The plasticizer preferably has a smaller molecular weight (weight average molecular weight (Mw) if it is an oligomer or polymer) than the alkali-soluble resin. The molecular weight (weight average molecular weight (Mw)) of the plasticizer is preferably 200 to 2,000.

There are no particular restrictions on the plasticizer, as long as it is a compound that is compatible with the alkali-soluble resin and exhibits plasticity. However, from the perspective of imparting plasticity, the plasticizer preferably has an alkyleneoxy group in its molecule, and a polyalkylene glycol compound is more preferred. The alkyleneoxy group contained in the plasticizer more preferably has a polyethyleneoxy structure or a polypropyleneoxy structure.

From the viewpoints of resolution and storage stability, it is preferable that the plasticizer contain a (meth)acrylate compound. From the viewpoints of compatibility, resolution, and adhesion to adjacent layers, it is more preferable that the alkali-soluble resin is an acrylic resin and the plasticizer contains a (meth)acrylate compound. Examples of (meth)acrylate compounds used as plasticizers include the (meth)acrylate compounds described above as ethylenically unsaturated compounds contained in the photosensitive layer.

When a thermoplastic resin layer and a photosensitive layer are laminated in direct contact with each other in a transfer film, it is preferable that both the thermoplastic resin layer and the photosensitive layer contain the same (meth)acrylate compound. This is because containing the same (meth)acrylate compound in the thermoplastic resin layer and the photosensitive layer suppresses component diffusion between the layers, improving storage stability.

When the thermoplastic resin layer contains a (meth)acrylate compound as a plasticizer, it is preferable that the (meth)acrylate compound does not polymerize even in the exposed areas after exposure, from the viewpoint of adhesion to adjacent layers.

Furthermore, from the viewpoints of resolution, adhesion to adjacent layers, and developability, a polyfunctional (meth)acrylate compound having two or more (meth)acryloyl groups in one molecule is preferred as the (meth)acrylate compound used as a plasticizer.

Furthermore, (meth)acrylate compounds having an acid group or urethane (meth)acrylate compounds are also preferred as (meth)acrylate compounds used as plasticizers.

The thermoplastic resin layer may contain one or more plasticizers. From the viewpoints of resolution, adhesion to adjacent layers, and developability, the content of the plasticizer is preferably 1% to 70% by mass, more preferably 10% to 60% by mass, and even more preferably 20% to 50% by mass, relative to the total mass of the thermoplastic resin layer.

From the viewpoint of thickness uniformity, the thermoplastic resin layer preferably contains a surfactant. Examples of surfactants include those that may be contained in the photosensitive layer described above, and the preferred embodiments are the same. The thermoplastic resin layer may contain one or more surfactants. The content of the surfactant is preferably 0.001% to 10% by mass, and more preferably 0.01% to 3% by mass, relative to the total mass of the thermoplastic resin layer.

The thermoplastic resin layer may contain a sensitizer. The sensitizer is not particularly limited, and examples include the sensitizers that may be contained in the photosensitive layer described above. The thermoplastic resin layer may contain one or more types of sensitizers. The amount of sensitizer contained can be selected appropriately depending on the purpose, but from the standpoint of improving sensitivity to the light source and visibility of exposed and unexposed areas, it is preferably in the range of 0.01% by mass to 5% by mass, and more preferably in the range of 0.05% by mass to 1% by mass, relative to the total mass of the thermoplastic resin layer.

In addition to the above components, the thermoplastic resin layer may contain known additives as needed. The thermoplastic resin layer is described in paragraphs [0189] to [0193] of JP 2014-85643 A, the contents of which are incorporated herein by reference.

From the viewpoint of adhesion to adjacent layers, the average thickness of the thermoplastic resin layer is preferably 1 μm or more, and more preferably 2 μm or more. There is no particular upper limit, but from the viewpoint of developability and resolution, it is preferably 20 μm or less, more preferably 10 μm or less, and even more preferably 5 μm or less. The average thickness of the thermoplastic resin layer is calculated as the arithmetic average of the thicknesses measured at five locations by cross-sectional observation using a scanning electron microscope (SEM).

There are no limitations on the method for producing the thermoplastic resin layer, as long as the desired thermoplastic resin layer can be obtained. Examples of methods for producing a thermoplastic resin layer include preparing a thermoplastic resin composition containing the above components and a solvent, applying the thermoplastic resin composition to an object such as a temporary support, and drying the resulting coating of the thermoplastic resin composition. It is preferable that the thermoplastic resin composition contain a solvent, as this adjusts the viscosity of the thermoplastic resin composition and facilitates the formation of the thermoplastic resin layer.

The solvent contained in the thermoplastic resin composition is not particularly limited as long as it can dissolve or disperse the above-mentioned components contained in the thermoplastic resin layer. Examples of solvents contained in the thermoplastic resin composition include those that may be contained in the photosensitive composition described above, and the same applies to preferred embodiments. The thermoplastic resin composition may contain one or more solvents. The content of the solvent when applying the thermoplastic resin composition is preferably 50 to 1,900 parts by mass, and more preferably 100 to 900 parts by mass, per 100 parts by mass of the total solids content in the thermoplastic resin composition.

The thermoplastic resin composition can be prepared and the thermoplastic resin layer can be formed in accordance with the method for preparing the photosensitive composition and the method for forming the photosensitive layer described above. For example, a solution of each component contained in the thermoplastic resin layer is prepared in advance by dissolving it in the solvent described above, and the resulting solution is mixed in a predetermined ratio to prepare a thermoplastic resin composition. The resulting thermoplastic resin composition is then applied to the surface of a temporary support, and the coating of the thermoplastic resin composition is dried to form a thermoplastic resin layer. Alternatively, a photosensitive layer and a water-soluble resin layer can be formed on a protective film described below, and then a thermoplastic resin layer can be formed on the water-soluble resin layer.

-Water-soluble resin layer-
The water-soluble resin layer preferably contains a water-soluble resin. Examples of water-soluble resins include polyvinyl alcohol-based resins, polyvinylpyrrolidone-based resins, cellulose-based resins, acrylamide-based resins, polyethylene oxide-based resins, gelatin, vinyl ether-based resins, polyamide resins, and copolymers thereof. From the viewpoint of suppressing mixing of components between multiple layers, the water-soluble resin contained in the water-soluble resin layer is preferably a resin different from both the polymer contained in the photosensitive layer and the thermoplastic resin (e.g., alkali-soluble resin) contained in the thermoplastic resin layer.

The water-soluble resin layer preferably contains polyvinyl alcohol, and more preferably contains both polyvinyl alcohol and polyvinylpyrrolidone, from the standpoints of oxygen barrier properties and preventing mixing of components when applying multiple layers and during storage after application.

The water-soluble resin layer may contain one or more types of water-soluble resins.

The content of the water-soluble resin in the water-soluble resin layer is not particularly limited, but from the standpoint of oxygen barrier properties and preventing mixing of components when applying multiple layers and during storage after application, it is preferably 50% to 100% by weight, more preferably 70% to 100% by weight, even more preferably 80% to 100% by weight, and particularly preferably 90% to 100% by weight, relative to the total weight of the water-soluble resin layer.

The water-soluble resin layer may also contain additives such as surfactants, if necessary.

The average thickness of the water-soluble resin layer is preferably 0.1 μm to 5 μm, and more preferably 0.5 μm to 3 μm. A thickness within this range does not reduce oxygen barrier properties, prevents mixing of components when applying multiple layers and during storage after application, and prevents an increase in the time required to remove the water-soluble resin layer during development. The average thickness of the water-soluble resin layer is calculated as the arithmetic mean of the thicknesses measured at five locations by cross-sectional observation using a scanning electron microscope (SEM).

There are no limitations on the method for producing the water-soluble resin layer, as long as the desired water-soluble resin layer can be obtained. The water-soluble resin layer can be formed, for example, by preparing a water-soluble resin layer-forming composition containing a water-soluble resin and any additives, applying it to a thermoplastic resin layer or a photosensitive layer, and drying the resulting coating of the water-soluble resin layer-forming composition. The water-soluble resin layer-forming composition preferably contains a solvent, which adjusts the viscosity of the water-soluble resin layer-forming composition and facilitates the formation of the water-soluble resin layer.

The solvent contained in the composition for forming a water-soluble resin layer is preferably at least one selected from the group consisting of water and water-miscible organic solvents, and more preferably water or a mixed solvent of water and a water-miscible organic solvent. Examples of water-miscible organic solvents include alcohols having 1 to 3 carbon atoms, acetone, ethylene glycol, and glycerin. Alcohols having 1 to 3 carbon atoms are preferred, and methanol or ethanol are more preferred.

(other layers)
The transfer layer may further include other layers. Examples of such other layers include a refractive index adjusting layer (contrast enhancement layer). The contrast enhancement layer is described in paragraph 0134 of WO 2018/179640. The other layers are described in paragraphs 0194 to 0196 of JP 2014-85643 A. The contents of these publications are incorporated herein by reference.

From the viewpoint of conformability to unevenness, the ratio of the total mass of polymerizable compounds (preferably ethylenically unsaturated compounds) to the total mass of polymers (preferably alkali-soluble resins) in the transfer layer (preferably photosensitive layer) is preferably 0.4 or more, more preferably 0.6 or more, and even more preferably 0.8 or more. The ratio of the total mass of polymerizable compounds (preferably ethylenically unsaturated compounds) to the total mass of polymers (preferably alkali-soluble resins) in the transfer layer (preferably photosensitive layer) is preferably 1.6 or less, more preferably 1.4 or less, and even more preferably 1.2 or less.

From the viewpoint of resolution, the average thickness of the transfer layer is preferably 50 μm or less, more preferably 20 μm or less, even more preferably 10 μm or less, and particularly preferably 5 μm or less. From the viewpoint of transferability, the average thickness of the transfer layer is preferably 0.1 μm or more, more preferably 0.5 μm or more, and even more preferably 1.0 μm or more. The average thickness of the transfer layer is calculated as the arithmetic average of the thicknesses measured at five locations by cross-sectional observation using a scanning electron microscope (SEM).

[Protective film]
The transfer film preferably includes a protective film. For example, the transfer film preferably includes a temporary support, a transfer layer, and a protective film in this order.

Materials that can be used to make the protective film include resin film and paper, with resin film being preferred from the standpoint of strength and flexibility. Examples of resin films include polyethylene film, polypropylene film, polyethylene terephthalate film, cellulose triacetate film, polystyrene film, and polycarbonate film. Among these, polyethylene film, polypropylene film, and polyethylene terephthalate film are preferred.

The average thickness of the protective film is preferably 1 μm to 100 μm, more preferably 5 μm to 50 μm, even more preferably 5 μm to 40 μm, and particularly preferably 15 μm to 30 μm. The average thickness of the protective film is calculated as the arithmetic mean of the thicknesses measured at five locations by cross-sectional observation using a scanning electron microscope (SEM).

The arithmetic mean roughness Ra of the surface of the protective film facing the transfer layer (hereinafter simply referred to as the "protective film surface") is preferably 0.3 μm or less, more preferably 0.1 μm or less, and even more preferably 0.05 μm or less, in order to achieve better resolution. Having the Ra value of the protective film surface within the above range improves the uniformity of the thickness of the transfer layer and the formed resist pattern. There is no particular lower limit for the Ra value of the protective film surface, but a value of 0.001 μm or more is preferred.

The Ra value of the surface of the protective film is measured using the following method. A three-dimensional optical profiler (New View 7300, manufactured by Zygo) is used to measure the surface of the protective film under the following conditions, obtaining a surface profile of the protective film. The measurement and analysis software used is MetroPro version 8.3.2 Microscope Application. Next, the Surface Map screen is displayed in the analysis software, and histogram data is obtained on the Surface Map screen. The arithmetic mean roughness is calculated from the obtained histogram data, and the Ra value of the surface of the protective film is obtained.

The protective film is incorporated into the transfer film, for example, by laminating the protective film and the transfer layer. Lamination of the protective film and the transfer layer is carried out, for example, using a known laminator. Examples of laminators include vacuum laminators and auto-cut laminators. The laminator is preferably a device equipped with any heatable roller, such as a rubber roller, and capable of applying pressure and heat.

<Deposition mask>
The deposition mask according to the present disclosure will be described below. The deposition mask has a first surface, a second surface opposite the first surface, and a plurality of through holes. Each of the plurality of through holes has a first opening in the first surface and a second opening in the second surface.

The ratio of the static friction coefficient of at least one surface selected from the group consisting of the first surface and the second surface to the static friction coefficient of the substrate used as the raw material for the deposition mask is preferably 1.1 or less, more preferably 0.9 to 1.1, and even more preferably 1.0 to 1.05. During the manufacturing process of the deposition mask, various treatments are performed on the substrate used as the raw material, which can change the properties of the substrate surface. On the other hand, preventing the static friction coefficient of the deposition mask surface from becoming significantly higher than the static friction coefficient of the substrate used as the raw material for the deposition mask prevents a decrease in slipperiness and makes the deposition mask less susceptible to scratches. In other words, the scratch resistance of the deposition mask is improved. Examples of methods for suppressing changes in the static friction coefficient during the manufacturing process of the deposition mask include the following. For example, a manufacturing method of a deposition mask using a transfer film according to the present disclosure can prevent a significant increase in the static friction coefficient during the manufacturing process of the deposition mask by improving transportability. For example, adjusting the conditions for the process of forming the resist pattern for forming the through holes, the laminating pressure, and the transport speed and tension conditions when transporting using the roll-to-roll method can prevent the static friction coefficient from becoming significantly higher.

The ratio of the dynamic friction coefficient of at least one surface selected from the group consisting of the first surface and the second surface to the dynamic friction coefficient of the substrate used as the raw material for the deposition mask is preferably 1.1 or less, more preferably 0.9 to 1.1, and even more preferably 1.0 to 1.05. During the manufacturing process of the deposition mask, various treatments are performed on the substrate used as the raw material, which can change the properties of the substrate surface. On the other hand, preventing the dynamic friction coefficient of the deposition mask surface from becoming significantly higher than the dynamic friction coefficient of the substrate used as the raw material for the deposition mask prevents a decrease in slipperiness and makes the deposition mask less susceptible to scratches. In other words, the scratch resistance of the deposition mask is improved. Examples of methods for suppressing changes in the dynamic friction coefficient during the manufacturing process of the deposition mask include the following. For example, a manufacturing method of a deposition mask using a transfer film according to the present disclosure can prevent a significant increase in the dynamic friction coefficient during the manufacturing process of the deposition mask by improving transportability. For example, adjusting the conditions for the process of forming the resist pattern for forming the through holes, the laminating pressure, and the transport speed and tension conditions when transporting using the roll-to-roll method can prevent the dynamic friction coefficient from becoming significantly higher.

In terms of scratch resistance, either the first surface of the deposition mask or the second surface of the deposition mask may have the above-mentioned characteristics. In terms of scratch resistance, both the first surface of the deposition mask and the second surface of the deposition mask may have the above-mentioned characteristics.

The static friction coefficient of at least one surface selected from the group consisting of the first surface and the second surface is preferably 1.0 or less, more preferably 0.85 or less, and even more preferably 0.75 or less. When the static friction coefficient of at least one surface selected from the group consisting of the first surface and the second surface is 1.0 or less, the transportability and scratch resistance of the deposition mask are improved. From the viewpoint of suppressing slippage relative to the roller during transport and suppressing scratches caused by slippage, the static friction coefficient of at least one surface selected from the group consisting of the first surface and the second surface is preferably 0.1 or more, and more preferably 0.2 or more.

The dynamic friction coefficient of at least one surface selected from the group consisting of the first surface and the second surface is preferably 0.80 or less, more preferably 0.75 or less, and even more preferably 0.70 or less. When the dynamic friction coefficient of at least one surface selected from the group consisting of the first surface and the second surface is 0.80 or less, the transportability and scratch resistance of the deposition mask are improved. From the viewpoint of suppressing slippage relative to the roller during transport and suppressing scratches caused by slippage, the dynamic friction coefficient of at least one surface selected from the group consisting of the first surface and the second surface is preferably 0.10 or more, and more preferably 0.15 or more.

The first surface of the deposition mask may have either the static friction coefficient described above or the dynamic friction coefficient described above. The first surface of the deposition mask may have both the static friction coefficient described above and the dynamic friction coefficient described above. The second surface of the deposition mask may have either the static friction coefficient described above or the dynamic friction coefficient described above. The second surface of the deposition mask may have both the static friction coefficient described above and the dynamic friction coefficient described above.

From the viewpoint of suppressing bubbles during lamination, the surface roughness Ra of the first surface is preferably 2.0 μm or less, and more preferably 1.0 μm or less. From the viewpoint of suppressing slippage relative to the rollers during transport and suppressing scratches caused by slippage, the surface roughness Ra of the first surface is preferably 0.05 μm or more, and more preferably 0.1 μm or more.

From the viewpoint of suppressing bubbles during lamination, the surface roughness Ra of the second side is preferably 2.0 μm or less, and more preferably 1.0 μm or less. From the viewpoint of suppressing slippage relative to the rollers during transport and suppressing scratches caused by slippage, the surface roughness Ra of the first side is preferably 0.05 μm or more, and more preferably 0.1 μm or more. The surface roughness Ra of the second side may be the same as the surface roughness Ra of the first side. The surface roughness Ra of the second side may be different from the surface roughness Ra of the first side.

In this disclosure, surface roughness Ra is measured using a 3D optical profiler (New View 7300, manufactured by Zygo). First, the surface profile of the target surface is obtained using the 3D optical profiler (New View 7300, manufactured by Zygo). The measurement and analysis software used is the Microscope Application of MetroPro version 8.3.2. Next, the measurement and analysis software is used to display the Surface Map screen, and histogram data is obtained on the Surface Map screen. The arithmetic mean roughness calculated from the obtained histogram data is used as the "surface roughness Ra."

Each of the multiple through holes has a first opening on the first surface and a second opening on the second surface. That is, the through hole extends from the first surface to the second surface. Examples of the shape of the through hole (i.e., the opening) observed in a plan view include a circle, an ellipse, and a rectangle. The shape of the through hole observed in a plan view is preferably a rectangle, and more preferably a square or rectangle. When the shape of the through hole observed in a plan view is a polygon (e.g., a rectangle), some or all of the corners of the polygon may be rounded. The through hole observed in a cross-sectional view is defined by the inner surface of the deposition mask. The through hole may be defined by one or more surfaces. The surfaces defining the through hole observed in a cross-sectional view may be straight or curved. The surfaces defining the through hole observed in a cross-sectional view may be a combination of straight and curved lines. In this paragraph, "cross-sectional view" refers to viewing a cross section along the thickness direction of the deposition mask.

The diameter of the second opening is preferably smaller than the diameter of the first opening. In other words, the diameter of the first opening is preferably larger than the diameter of the second opening. For example, in a vapor deposition method in which the vapor deposition mask is positioned with its second surface facing the target, a substance that reaches the first surface of the vapor deposition mask from the vaporization source travels through the through-holes in the direction from the first surface to the second surface of the vapor deposition mask and adheres to the target. In the above method, if the diameter of the second opening is smaller than the diameter of the first opening, the substance that reaches the first surface of the vapor deposition mask from the vaporization source can more easily enter the through-holes. As a result, for example, productivity and pattern accuracy can be improved.

In this disclosure, the diameter of the openings is measured based on images obtained using a scanning electron microscope (SEM). The diameter of the openings is defined as the maximum value of the line connecting any two points on the outline of the openings observed in a plan view. When there are two or more openings, the diameter of the openings is expressed as the average diameter of the openings. The average diameter of the openings is calculated as the arithmetic mean of the diameters of 10 openings. However, when the number of openings is 2 to 9, the average diameter of the openings is calculated as the arithmetic mean of the diameters of all openings.

When the diameter of the second opening is smaller than the diameter of the first opening, the ratio of the diameter of the second opening to the diameter of the first opening is preferably 0.8 or less, more preferably 0.4 or less, and even more preferably 0.3 or less. From the perspective of achieving high pattern resolution, the ratio of the diameter of the second opening to the diameter of the first opening is preferably 0.01 or more, more preferably 0.1 or more, and even more preferably 0.15 or more.

The diameter of the second opening is preferably 100 μm or less, more preferably 70 μm or less, and even more preferably 50 μm or less. Furthermore, the diameter of the second opening is preferably 40 μm or less, more preferably 35 μm or less, and even more preferably 30 μm or less. Furthermore, the diameter of the second opening is preferably 25 μm or less, more preferably 20 μm or less, and even more preferably 10 μm or less. As the diameter of the second opening becomes smaller, a pattern with higher resolution is formed. There is no lower limit to the diameter of the second opening. The lower limit of the diameter of the second opening may be 8 μm, 5 μm, 1 μm, or 0.1 μm.

The diameter of the first opening is preferably 100 μm or less, more preferably 70 μm or less, and even more preferably 50 μm or less. Furthermore, the diameter of the first opening is preferably 40 μm or less, more preferably 35 μm or less, and even more preferably 30 μm or less. Furthermore, the diameter of the first opening is preferably 25 μm or less, more preferably 20 μm or less, and even more preferably 10 μm or less. As the diameter of the first opening becomes smaller, a pattern with higher resolution is formed. There is no lower limit to the diameter of the first opening, as long as a pattern can be formed. The lower limit of the diameter of the first opening may be 8 μm, 5 μm, 1 μm, or 0.1 μm.

When the first opening is rectangular, the length of one side of the first opening is preferably 10 μm to 100 μm, more preferably 10 μm to 80 μm, and even more preferably 15 μm to 70 μm. When the second opening is rectangular, the length of one side of the second opening is preferably 5 μm to 50 μm, more preferably 5 μm to 40 μm, and even more preferably 5 μm to 30 μm.

The diameter of the through hole observed in a cross-sectional view may change continuously or discontinuously in the direction from the first surface to the second surface. It is preferable that the diameter of the through hole observed in a cross-sectional view gradually decreases in the direction from the first surface to the second surface. In this paragraph, "cross-sectional view" means viewing a cross section along the thickness direction of the deposition mask.

The deposition mask may have a single-layer structure or a multi-layer structure.

The deposition mask preferably includes a metal layer. The metal layer may have a single-layer structure or a multi-layer structure. Examples of metal elements included in the metal layer include Cu, Ni, Fe, Cr, Mn, and Co. The metal layer preferably includes iron (Fe). Part or all of the metal layer may be an alloy. Examples of alloys include Ni-Co alloys, Fe-Ni alloys, and Fe-Ni-Co alloys. An example of an Fe-Ni alloy is Invar. An example of an Fe-Ni-Co alloy is Super Invar. The metal layer preferably includes at least one metal element selected from the group consisting of Cu, Ni, Fe, Cr, Mn, and Co, and more preferably at least one metal element selected from the group consisting of Cu, Fe, and Ni. The metal layer may also include elements other than metal elements. Examples of elements other than metal elements include B, C, N, O, P, S, and Cl. The metal layer may contain impurities that are inevitably mixed in during the manufacturing process. The metal layer is preferably an iron alloy. The metal layer is preferably an alloy containing Fe and Ni. The metal layer is preferably an alloy containing Fe, Ni, and Co. The proportion of Ni in the alloy is preferably 10% to 50% by mass, more preferably 30% to 40% by mass, and even more preferably 32% to 38% by mass. The proportion of Co in the alloy is preferably 0% to 10% by mass, and more preferably 2% to 6% by mass.

From the viewpoint of the resolution of through-holes during the manufacturing process of the deposition mask, the average thickness of the metal layer is preferably 100 μm or less, more preferably 30 μm or less, and even more preferably 25 μm or less. From the viewpoint of the rigidity of the deposition mask, the average thickness of the metal layer is preferably 5 μm or more, and more preferably 10 μm or more. The average thickness of the metal layer is calculated as the arithmetic mean of the thicknesses measured at five locations by cross-sectional observation using a scanning electron microscope (SEM).

The vapor deposition mask may include a metal layer and a substrate layer. The substrate layer is preferably located closer to the second surface of the vapor deposition mask than the metal layer. The substrate layer may constitute the second surface of the vapor deposition mask. The substrate layer may have a single-layer structure or a multi-layer structure. Examples of components of the substrate layer include glass and polymers. Examples of polymers include polyimide, cycloolefin polymer, polyethylene, polypropylene, polyethylene terephthalate, cellulose triacetate, polystyrene, and polycarbonate. The substrate layer is preferably a glass substrate or a resin film, and more preferably a resin film. Examples of resin films include polyimide film, cycloolefin polymer film, polyethylene film, polypropylene film, polyethylene terephthalate film, cellulose triacetate film, polystyrene film, and polycarbonate film.

The deposition mask may include other components. Examples of such components include a frame. The frame reinforces the deposition mask or improves the handleability of the deposition mask. The frame may be arranged around the through-holes in a plan view, or may be arranged on the outer periphery of the deposition mask in a plan view. Examples of components of the frame include metals. Examples of metals include Fe-Ni alloys (e.g., Invar) and Fe-Ni-Co alloys (e.g., Super Invar).

The structure of a deposition mask will be described with reference to Figures 1, 2, and 3. Figure 1 is a schematic plan view showing a deposition mask according to an embodiment. Figure 2 is a schematic plan view showing an enlarged view of a through-hole in the deposition mask shown in Figure 1. Figure 3 is a schematic cross-sectional view showing an enlarged view of a through-hole in the deposition mask shown in Figure 1. The deposition mask 100 includes a metal layer 10 having a first surface 10F, a second surface 10R opposite the first surface 10F, and through-holes 10H. The first surface 10F of the metal layer 10 faces the viewer viewing Figures 1 and 2. The first surface 10F and the second surface 10R of the metal layer 10 face in opposite directions. As shown in Figures 1 and 2, the through-holes 10H are defined by a grid pattern formed by the metal layer 10, and the shape of the through-holes 10H observed in a plan view is rectangular. The reason why the outline of the through hole 10H is observed twice in FIG. 2 is because the outline of the opening formed on the second surface 10R of the metal layer 10 (specifically, the second opening 10RA in FIG. 3 ) is observed inside the outline of the opening formed on the first surface 10F of the metal layer 10 (specifically, the first opening 10FA in FIG. 3 ). As shown in FIG. 3 , the through hole 10H extends from the first surface 10F of the metal layer 10 to the second surface 10R of the metal layer 10. The through hole 10H has a first opening 10FA on the first surface 10F of the metal layer 10 and a second opening 10RA on the second surface 10R of the metal layer 10. The through hole 10H is defined by the inner surface of the metal layer 10, and the inner surface of the metal layer 10 defining the through hole 10H is curved. The diameter of the second opening 10RA is smaller than the diameter of the first opening 10FA. The diameter of the through hole 10H gradually decreases in the direction from the first surface 10F to the second surface 10R.

A preferred application of a deposition mask is, for example, a pattern manufacturing method using a vapor deposition method. In the vapor deposition method, the deposition mask is preferably placed on the target object with the second surface of the deposition mask facing the target object. When the second surface of the deposition mask faces the target object, substances that reach the first surface of the deposition mask from the vaporization source easily enter the through-holes. The substances that enter the through-holes move through the through-holes in the direction from the first surface to the second surface of the deposition mask and adhere to the target object. A pattern is formed when the substances that pass through the through-holes are deposited on the target object. Examples of targets on which a pattern can be formed include glass substrates and resin films. The type of vapor deposition method, vapor deposition conditions, and type of vapor-deposited substance are determined, for example, depending on the desired pattern. A preferred vapor deposition method is, for example, vacuum vapor deposition. A specific application of a deposition mask is, for example, a method for manufacturing OLEDs (organic light-emitting diodes).

There are no limitations on the manufacturing method of the deposition mask as long as the desired deposition mask can be obtained. It is preferable to manufacture the deposition mask by the method described below.

<Method of manufacturing deposition mask>
Hereinafter, a method for manufacturing a deposition mask according to the present disclosure will be described. The deposition mask is preferably manufactured using a transfer film according to the present disclosure. In a preferred embodiment, the method for manufacturing a deposition mask includes the following steps.
(1) Preparing a substrate having a first surface and a second surface opposite the first surface (hereinafter, sometimes referred to as the "first preparation step").
(2) Preparing a transfer film including a temporary support having a first surface and a second surface opposite the first surface, and a transfer layer facing the second surface of the temporary support (hereinafter, this may be referred to as the "second preparation step").
(3) Laminating the substrate and the transfer film, and arranging the transfer layer and temporary support in this order on the first surface of the substrate (hereinafter, sometimes referred to as the "laminating step").
(4) Pattern-exposing the transfer layer disposed on the substrate (hereinafter, sometimes referred to as the "exposure step").
(5) After the transfer layer has been subjected to pattern exposure, the transfer layer is subjected to a development process to form a resist pattern (hereinafter, this may be referred to as the "development step").
(6) After forming the resist pattern, an etching process is performed on the substrate to form through holes extending from the first surface of the substrate to the second surface of the substrate (hereinafter, this may be referred to as the "etching process").
(7) Removing the resist pattern after forming the through holes (hereinafter, sometimes referred to as the "removing step").

[First preparation process]
In the first preparation step, a substrate having a first surface and a second surface opposite to the first surface is prepared. The substrate may have a single-layer structure or a multi-layer structure.

The substrate preferably includes a metal layer. The substrate may be a metal layer. The form of the metal layer is the same as that of the metal layer described above in the "Vapor Deposition Mask" section. The metal layer may be a known metal substrate (including commercially available products). The metal layer may be manufactured by a known method. The metal layer may be manufactured by a casting method, a forging method, a sputtering method, or a plating method.

The substrate may include a metal layer and a substrate layer. The substrate layer is preferably located closer to the second surface of the substrate than the metal layer. The substrate layer may constitute the second surface of the substrate. The configuration of the substrate layer is the same as the configuration of the substrate layer described above in the "Deposition Mask" section.

The surface roughness Ra of the first surface of the substrate is preferably 0.1 μm to 5.0 μm, and more preferably 0.2 μm to 4.0 μm. For example, as the surface roughness Ra of the first surface of the substrate increases, the slipperiness improves. For example, as the surface roughness Ra of the first surface of the substrate decreases, the adhesion between the substrate and the transfer film during the lamination process improves. As the surface roughness Ra of the first surface of the substrate decreases, the difference between the slipperiness of the substrate and the slipperiness of the transfer film tends to decrease, improving transportability, for example.

The surface roughness Ra of the second surface of the substrate is preferably 0.1 μm to 5.0 μm, and more preferably 0.2 μm to 4.0 μm. For example, as the surface roughness Ra of the second surface of the substrate increases, the slipperiness improves. For example, as the surface roughness Ra of the second surface of the substrate decreases, the difference between the slipperiness of the substrate and the slipperiness of the transfer film tends to decrease, improving transportability, for example. The surface roughness Ra of the second surface of the substrate may be the same as the surface roughness Ra of the first surface of the substrate. The surface roughness Ra of the second surface of the substrate may be different from the surface roughness Ra of the first surface of the substrate.

[Second preparation process]
In the second preparation step, a transfer film is prepared, the transfer film including a temporary support having a first surface and a second surface opposite to the first surface, and a transfer layer facing the second surface of the temporary support. The second preparation step may be performed before the first preparation step. The second preparation step may be performed after the first preparation step. The second preparation step may be performed simultaneously with the first preparation step.

The aspects of the transfer film used in the second preparation step are described above in the "Transfer Film" section. The preferred aspects of the transfer film used in the second preparation step are the same as the preferred aspects of the transfer film described above in the "Transfer Film" section.

The static friction coefficient of the first surface of the temporary support is preferably 1.0 or less. When the static friction coefficient of the first surface of the temporary support is 1.0 or less, the slipperiness of the first surface of the temporary support is improved. Because the first surface of the temporary support can come into contact with transport items such as rollers during the transport process, improving the slipperiness of the first surface of the temporary support improves the transportability of the transfer film or the laminate obtained by the lamination process. As a result, for example, the occurrence of wrinkles is suppressed during the manufacturing process of a deposition mask using a transfer film. Preferred aspects of the static friction coefficient of the first surface of the temporary support are as described above.

The dynamic friction coefficient of the first surface of the temporary support is preferably 0.80 or less. When the dynamic friction coefficient of the first surface of the temporary support is 0.80 or less, the slipperiness of the first surface of the temporary support is improved. Because the first surface of the temporary support can come into contact with transport items such as rollers during the transport process, improving the slipperiness of the first surface of the temporary support improves the transportability of the transfer film or the laminate obtained by the lamination process. As a result, for example, the occurrence of wrinkles is suppressed during the manufacturing process of a deposition mask using a transfer film. Preferred aspects of the dynamic friction coefficient of the first surface of the temporary support are as described above.

From the viewpoint of transportability, the first surface of the temporary support may have either the static friction coefficient described above or the dynamic friction coefficient described above. From the viewpoint of transportability, the first surface of the temporary support may have both the static friction coefficient described above and the dynamic friction coefficient described above.

From the standpoint of transportability, the ratio of the static friction coefficient of the first surface of the temporary support to the static friction coefficient of the first surface of the substrate is preferably 0.25 to 3.0, and more preferably 0.5 to 2.0.

From the standpoint of transportability, the ratio of the dynamic friction coefficient of the first surface of the temporary support to the dynamic friction coefficient of the first surface of the substrate is preferably 0.25 to 3.0, and more preferably 0.5 to 2.0.

[Lamination process]
In the laminating step, the substrate and the transfer film are laminated together, and the transfer layer and the temporary support are disposed in this order on the first surface of the substrate.

The lamination step may be performed by a known method. In the lamination step, it is preferable to press the substrate and the transfer film together. For example, it is preferable to overlap the substrate and the transfer film and then apply pressure and heat using a means such as a roll to bond the substrate and the transfer film together. In the lamination step, known laminators such as laminators, vacuum laminators, and auto-cut laminators, which can increase productivity, may be used. The lamination temperature is preferably, for example, 70°C to 130°C. If the transfer film includes a protective film, the lamination step is performed after removing the protective film.

[Exposure process]
In the exposure step, the transfer layer disposed on the substrate is subjected to pattern exposure. "Pattern exposure of the transfer layer" means that exposed and non-exposed portions are formed in the transfer layer by irradiating the transfer layer with light. The positional relationship between the exposed and non-exposed portions is determined, for example, depending on the shape of the target resist pattern.

The exposure step preferably includes irradiating the transfer layer with light in a direction from the transfer layer toward the substrate.

The light used in the exposure process preferably contains at least one wavelength selected from the group consisting of 365 nm and 405 nm.

Examples of light sources include ultra-high pressure mercury lamps, high pressure mercury lamps, metal halide lamps, and LEDs (light-emitting diodes).

The exposure dose is preferably 5 mJ/cm ² to 200 mJ/cm ² , and more preferably 10 mJ/cm ² to 100 mJ/cm ² .

Examples of exposure methods include contact exposure and non-contact exposure. Examples of contact exposure methods include methods using a photomask. Examples of non-contact exposure methods include proximity exposure, lens or mirror projection exposure, and direct exposure using an exposure laser. Lens or mirror projection exposure may use an exposure machine with an appropriate lens numerical aperture (NA) depending on the required resolution and depth of focus. In direct exposure methods, direct imaging may be performed on the transfer layer, or reduced projection exposure may be performed on the transfer layer via a lens. The exposure process may be performed under atmospheric pressure, reduced pressure, or vacuum. The exposure process may be performed with a liquid such as water interposed between the light source and the transfer layer.

The exposure step may be carried out before or after peeling off the temporary support. If the exposure step is carried out before peeling off the temporary support, the transfer layer may be exposed through the temporary support. In an exposure step using a photomask, the transfer layer may be pattern-exposed with the photomask in contact with the transfer layer, or the transfer layer may be pattern-exposed with the photomask close to the transfer layer without contacting it. To prevent contamination of the photomask due to contact between the photomask and the transfer layer and to avoid influence of foreign matter attached to the photomask on exposure, it is preferable to pattern-expose the transfer layer without peeling off the temporary support. If the transfer layer is exposed through the temporary support, it is preferable to peel off the temporary support after the exposure step and before the development step.

[Development process]
In the development step, the transfer layer is subjected to a development treatment to form a resist pattern. The resist pattern is formed by removing the exposed or unexposed portions of the transfer layer. When the transfer layer includes a negative photosensitive layer, the unexposed portions of the transfer layer are usually removed by the development treatment, and the exposed portions of the transfer layer form a resist pattern. When the transfer layer includes a positive photosensitive layer, the exposed portions of the transfer layer are usually removed by a developer, and the unexposed portions of the transfer layer form a resist pattern.

The development process is carried out using, for example, a developer. Examples of the developer include known developers (for example, the developer described in JP-A-5-72724). A preferred developer is an aqueous alkaline developer containing a compound with a pKa of 7 to 13 at a concentration of 0.05 mol/L to 5 mol/L. Examples of alkaline compounds contained in aqueous alkaline developers include sodium hydroxide, potassium hydroxide, sodium carbonate, potassium carbonate, sodium bicarbonate, potassium bicarbonate, tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrapropylammonium hydroxide, tetrabutylammonium hydroxide, and choline (2-hydroxyethyltrimethylammonium hydroxide). The developer may contain a water-soluble organic solvent. The developer may also contain a surfactant. Examples of preferred developers include the developer described in paragraph 0194 of WO 2015/093271.

The temperature of the developer is preferably between 20°C and 40°C.

Examples of development methods include puddle development, shower development, shower and spin development, and dip development. Shower development is a development method in which the developer is sprayed onto the target object in a shower. Preferred development methods include, for example, the development method described in paragraph 0195 of WO 2015/093271.

The developer and residue remaining after the development step are preferably removed by a known method. Methods for removing developer and residue include, for example, shower treatment and air knife treatment. In shower treatment, liquids such as water and detergent are sprayed onto the object using a shower. Residue may also be removed using a brush.

The shape of the resist pattern may be determined according to the shape of the through-hole desired in the etching process. Examples of the shape of the opening defined by the resist pattern observed in plan view include a circle, an ellipse, and a rectangle. The shape of the opening observed in plan view is preferably a rectangle, and more preferably a square or rectangle. When the opening observed in plan view is a polygon (e.g., a rectangle), some or all of the corners of the polygon may be rounded.

The diameter of the opening defined by the resist pattern may be determined according to the diameter of the target through hole in the etching process. The smaller the diameter of the opening defined by the resist pattern, the smaller the diameter of the through hole formed in the substrate in the etching process. The diameter of the opening defined by the resist pattern is preferably 100 μm or less, more preferably 70 μm or less, and even more preferably 50 μm or less. Furthermore, the diameter of the opening is preferably 40 μm or less, more preferably 35 μm or less, and even more preferably 30 μm or less. Furthermore, the diameter of the opening is preferably 25 μm or less, more preferably 20 μm or less, and even more preferably 10 μm or less. There is no lower limit to the diameter of the opening. The lower limit of the diameter of the opening may be 8 μm, 5 μm, 1 μm, or 0.1 μm. The diameter of the opening defined by the resist pattern is measured using a method similar to the method for measuring the diameter of the opening in the deposition mask described above.

When the shape of the opening observed in a plan view is rectangular, the length of one side of the rectangular opening is preferably 5 μm to 50 μm, more preferably 5 μm to 40 μm, and even more preferably 5 μm to 30 μm.

[Etching process]
In the etching step, an etching process is performed on the substrate to form a through-hole extending from the first surface of the substrate to the second surface of the substrate. The through-hole is formed by removing the substrate not protected by the resist pattern. The etching step forms at least one through-hole. The etching step may form multiple through-holes.

The etching process may be a known method. Examples of etching processes include wet etching and dry etching (e.g., plasma etching). Examples of etching processes include the method described in paragraphs 0209 to 0210 of JP 2017-120435 A and the method described in paragraphs 0048 to 0054 of JP 2010-152155 A.

The etching process is preferably wet etching. In wet etching, an etching solution is typically used. The type of etching solution may be selected from acidic and alkaline etching solutions depending on the target to be etched. Examples of acidic etching solutions include aqueous solutions containing at least one acidic component selected from the group consisting of hydrochloric acid, sulfuric acid, nitric acid, acetic acid, hydrofluoric acid, oxalic acid, and phosphoric acid. Examples of acidic etching solutions include aqueous solutions containing the above-mentioned acidic component and at least one salt selected from the group consisting of ferric chloride, ammonium fluoride, and potassium permanganate. The acidic component may be a combination of multiple acidic components. Examples of alkaline etching solutions include aqueous solutions containing at least one alkaline component selected from the group consisting of sodium hydroxide, potassium hydroxide, ammonia, organic amines, and salts of organic amines (e.g., tetramethylammonium hydroxide). Examples of alkaline etching solutions include aqueous solutions containing the above-mentioned alkaline component and a salt (e.g., potassium permanganate). The alkaline component may be a combination of multiple alkaline components.

The through-holes extending from the first surface of the substrate to the second surface of the substrate have an opening on the first surface of the substrate and an opening on the second surface of the substrate. Regarding the openings formed in the etching step, it is preferable that the opening on the first surface of the substrate corresponds to the first opening of the deposition mask, and the opening on the second surface of the substrate corresponds to the second opening of the deposition mask. Alternatively, the opening on the first surface of the substrate may correspond to the second opening of the deposition mask, and the opening on the second surface of the substrate may correspond to the first opening of the deposition mask. Preferred aspects of the through-holes (including openings) formed in the etching step are the same as the preferred aspects of the through-holes (including openings) described in the "Deposition Mask" section above. For example, the preferred diameter of the through-hole on the first surface of the substrate may be the same as the preferred diameter of the first opening of the deposition mask described in the "Deposition Mask" section above, and the preferred diameter of the through-hole on the second surface of the substrate may be the same as the preferred diameter of the second opening of the deposition mask described in the "Deposition Mask" section above. For example, the preferred diameter of the through hole in the first surface of the substrate may be the same as the preferred diameter of the second opening of the deposition mask described above in the "Deposition Mask" section, and the preferred diameter of the through hole in the second surface of the substrate may be the same as the preferred diameter of the first opening of the deposition mask described above in the "Deposition Mask" section. Among the above combinations, it is preferred that the preferred diameter of the through hole in the first surface of the substrate is the same as the preferred diameter of the first opening of the deposition mask described above in the "Deposition Mask" section, and the preferred diameter of the through hole in the second surface of the substrate is the same as the preferred diameter of the second opening of the deposition mask described above in the "Deposition Mask" section.

[Removal process]
In the removing step, the resist pattern is removed. Examples of the removing method include a method of removing the resist pattern using a chemical treatment. A method of removing the resist pattern using a remover is preferred.

Examples of the removal solution include a removal solution containing an inorganic or organic alkaline component and water, dimethyl sulfoxide, N-methylpyrrolidone, or a mixed solvent thereof. Examples of inorganic alkaline components include sodium hydroxide and potassium hydroxide. Examples of organic alkaline components include primary amine compounds, secondary amine compounds, tertiary amine compounds, and quaternary ammonium salt compounds.

The resist pattern may be removed by immersing the laminate containing the resist pattern in a remover. The temperature of the remover is preferably 30°C to 80°C, and more preferably 50°C to 80°C. The immersion time is preferably 1 minute to 30 minutes. During the immersion method, the remover may be stirred.

The resist pattern may be removed, for example, by spraying, showering, or puddling.

[Other processes]
The method for manufacturing the deposition mask may further include other steps as necessary.

The method for manufacturing a deposition mask may include a pressure step after the lamination step. For example, in the pressure step, the laminate obtained by laminating the substrate and the transfer film is pressurized. The laminate to be pressed is preferably a laminate including the substrate, the transfer layer, and the temporary support, in this order. The laminate to be pressed may also be a laminate including the substrate and the transfer layer, in this order. For example, when the temporary support is peeled off after the lamination step, a laminate including the substrate and the transfer layer, in this order, is formed. In the pressure step, the laminate obtained by laminating the transfer film and the substrate may be pressure-treated in an autoclave. For example, the pressure treatment can be performed under conditions of 50°C to 60°C, 0.5 MPa to 0.6 MPa, and for 60 minutes. Pressurizing the laminate can improve adhesion between the substrate and the transfer layer and improve the transfer layer's ability to conform to the unevenness of the substrate surface. The pressure step is preferably performed before the exposure step.

When the substrate includes a metal layer and a substrate layer, the method for manufacturing a vapor deposition mask may include removing the substrate layer included in the substrate.

A method for manufacturing a vapor deposition mask will be described with reference to FIG. 4. FIG. 4 is a schematic cross-sectional view showing a method for manufacturing a vapor deposition mask according to one embodiment. As shown in FIG. 4(a), a metal layer 10 having a first surface 10F and a second surface 10R opposite the first surface 10F is prepared. As shown in FIG. 4(b), a transfer film (not shown) and the metal layer 10 are bonded together, and a transfer layer 20 is placed on the first surface 10F of the metal layer 10. As shown in FIG. 4(c), the transfer layer 20 is pattern-exposed and then developed to form a resist pattern 21. As shown in FIG. 4(d), the metal layer 10 is etched to form a through hole 10H. During the etching process, isotropic etching (i.e., etching that progresses in the depth direction of the metal layer 10 as well as etching that progresses in a direction perpendicular to the depth direction of the metal layer 10) occurs, resulting in the formation of a through hole 10H having a cross-sectional shape as shown in FIG. 4(d). As shown in FIG. 4( e), the resist pattern 21 is removed to obtain the deposition mask 100. The through-hole 10H formed in the metal layer 10 extends from the first surface 10F of the metal layer 10 to the second surface 10R of the metal layer 10. The through-hole 10H forms a first opening 10FA in the first surface 10F of the metal layer 10 and a second opening 10RA in the second surface 10R of the metal layer 10.

The present disclosure will be described in detail below using examples. However, the present disclosure is not limited to the following examples. In the following description, unless otherwise specified, "%" means "% by mass" and "parts" means "parts by mass."

<Temporary Support 1>
As the temporary support 1, Lumirror 16P60 (Toray Industries, Inc., thickness: 16 μm) was prepared.

<Temporary support 2>
As the temporary support 2, Lumirror 16T70 (Toray Industries, Inc., thickness: 16 μm) was prepared.

<Temporary support 3>
As the temporary support 3, Lumirror 16FB40 (Toray Industries, Inc., thickness: 16 μm) was prepared.

<Temporary support 4>
As the temporary support 4, Lumirror 16QS62 (Toray Industries, Inc., thickness: 16 μm) was prepared.

<Temporary support 5>
A temporary support 5 was prepared by the following method.

[Preparation of particle-containing layer-forming composition 1]
The mixture obtained by mixing the following components was filtered using a 6 μm filter (F20, manufactured by Mahle Filter Systems Co., Ltd.), and then subjected to membrane degassing using a 2×6 Radial Flow Superphobic (manufactured by Polypore Co., Ltd.) to obtain particle-containing layer-forming composition 1.

Acrylic polymer (AS-563A, Daicel FineChem Co., Ltd., solid content: 27.5% by mass): 167 parts Nonionic surfactant (Naloacty CL95, Sanyo Chemical Industries, Ltd., solid content: 100% by mass): 0.7 parts Anionic surfactant (Rapisol A-90, NOF Corporation, diluted with water to 1% by mass solid content): 55.7 parts Carnauba wax dispersion (Cellosol 524, Chukyo Yushi Co., Ltd., solid content: 30% by mass): 7 parts Carbodiimide compound (Carbodilite V-02-L2, Nisshinbo Chemical Inc., diluted with water to 10% by mass solid content): 20.9 parts Matting agent (Snowtex XL, Nissan Chemical Industries, Ltd., solid content: 40% by mass): 2.8 parts Matting agent (Aerosil OX50, Nippon Aerosil Co., Ltd., solid content: 10% by mass, water dispersion, median diameter: 0.2 μm): 2.95 parts Water: 743 parts

[Extrusion molding]
Pellets of polyethylene terephthalate prepared using the citric acid chelate organic titanium complex described in Japanese Patent No. 5575671 as a polymerization catalyst were dried to reduce the moisture content to 50 ppm or less. The pellets were placed in the hopper of a 30 mm diameter single-screw kneading extruder, melted at 280°C, and extruded. The melt was passed through a filter (pore size: 2 μm) and then extruded from a die onto a cooling roll at 25°C. Specifically, the melt was adhered to the cooling roll using an electrostatic application method. An unstretched film was obtained by the above procedure.

[Stretching and Coating]
The solidified unstretched film was subjected to sequential biaxial stretching by the following method.

(a) Longitudinal Stretching The unstretched film was stretched in the longitudinal direction (machine direction) by passing it between two pairs of nip rolls with different peripheral speeds. Specifically, the preheating temperature was 75°C, the stretching temperature was 90°C, the stretching ratio was 3.4 times, and the stretching speed was 1300%/sec.

(b) Coating Composition 1 for forming a particle-containing layer was coated on one surface of the longitudinally stretched film using a bar coater so that the thickness of the film after formation would be 40 nm.

(c) Transverse Stretching The film that had been subjected to longitudinal stretching and coating was transversely stretched using a tenter under the following conditions.
Preheat temperature: 110°C
Stretching temperature: 120℃
Stretching ratio: 4.2 times Stretching speed: 50%/sec

[Heat fixation]
The biaxially stretched film after transverse stretching was heat set under the following conditions.
Heat fixing temperature: 227℃
Heat setting time: 6 seconds

[Thermal relaxation]
After heat setting, the tenter width was reduced and the film was heat-relaxed under the following conditions.
Thermal relaxation temperature: 190℃
Thermal relaxation rate: 4%

[Rewind]
After heat relaxation, both ends of the film were trimmed, and the ends of the film were knurled to a width of 10 mm. The film was then wound up under a tension of 40 kg/m. The film width was 1.5 m and the wound length was 6,300 m. The resulting film roll was used as a temporary support. The temporary support included a polyester film having a thickness of 16 μm and a particle-containing layer having a thickness of 40 nm. The particle-containing layer constituted the first surface of the temporary support, and the polyester film constituted the second surface of the temporary support.

The haze value of the temporary support was 0.20%. The haze value was measured as total optical haze using a haze meter (NDH2000, manufactured by Nippon Denshoku Industries Co., Ltd.). The thermal shrinkage upon heating at 150°C for 30 minutes was 1.0% on the MD (machine direction) side and 0.2% on the TD (transverse direction, the in-plane direction of the film perpendicular to the machine direction) side. The thickness of the particle-containing layer measured using a cross-sectional TEM photograph was 40 nm. The average particle diameter of the particles contained in the particle-containing layer measured using a Hitachi High-Technologies Corporation HT-7700 transmission electron microscope (TEM) was 50 nm.

<Temporary Support 6>
Temporary support 6 was prepared in the same manner as temporary support 5, except that particle-containing layer forming composition 1 was changed to particle-containing layer forming composition 2 described below.

(Preparation of particle-containing layer-forming composition 2)
The mixture obtained by mixing the following components was filtered using a 6 μm filter (F20, manufactured by Mahle Filter Systems Co., Ltd.), and then subjected to membrane degassing using a 2×6 Radial Flow Superphobic (manufactured by Polypore Co., Ltd.) to obtain particle-containing layer-forming composition 2.

Acrylic polymer (AS-563A, Daicel FineChem Co., Ltd., solid content: 27.5% by mass): 167 parts Nonionic surfactant (Naloacty CL95, Sanyo Chemical Industries, Ltd., solid content: 100% by mass): 0.7 parts Anionic surfactant (Rapisol A-90, NOF Corporation, diluted with water to 1% by mass solid content): 114.4 parts Carnauba wax dispersion (Cellosol 524, Chukyo Yushi Co., Ltd., solid content: 30% by mass): 7 parts Carbodiimide compound (Carbodilite V-02-L2, Nisshinbo Chemical Inc., diluted with water to 10% by mass solid content): 20.9 parts Matting agent (Snowtex XL, Nissan Chemical Industries, Ltd., solid content: 40% by mass, average particle size: 50 nm): 2.8 parts Water: 690.2 parts

<Temporary support 7>
Temporary support 7 was prepared in the same manner as temporary support 5, except that particle-containing layer forming composition 1 was changed to particle-containing layer forming composition 3 described below.

(Preparation of particle-containing layer-forming composition 3)
The mixture obtained by mixing the following components was filtered using a 6 μm filter (F20, manufactured by Mahle Filter Systems Co., Ltd.), and then subjected to membrane degassing using a 2×6 Radial Flow Superphobic (manufactured by Polypore Co., Ltd.) to obtain particle-containing layer-forming composition 3.

Acrylic polymer (AS-563A, Daicel FineChem Co., Ltd., solid content: 27.5% by mass): 167 parts Nonionic surfactant (Naloracty CL95, Sanyo Chemical Industries, Ltd., solid content: 100% by mass): 0.7 parts Anionic surfactant (Rapisol A-90, NOF Corporation, diluted with water to 1% by mass solid content): 114.4 parts Carnauba wax dispersion (Cellosol 524, Chukyo Yushi Co., Ltd., solid content: 30% by mass): 7 parts Carbodiimide compound (Carbodilite V-02-L2, Nisshinbo Chemical Inc., diluted with water to 10% by mass solid content): 20.9 parts Matting agent (Snowtex XL, Nissan Chemical Industries, Ltd., solid content: 40% by mass, average particle size: 50 nm) 1.4 parts Water: 691.6 parts

<Temporary support 8>
Temporary support 8 was prepared in the same manner as temporary support 5, except that particle-containing layer forming composition 1 was changed to particle-containing layer forming composition 4 described below.

(Preparation of particle-containing layer-forming composition 4)
The mixture obtained by mixing the following components was filtered using a 6 μm filter (F20, manufactured by Mahle Filter Systems Co., Ltd.), and then subjected to membrane degassing using a 2×6 Radial Flow Superphobic (manufactured by Polypore Co., Ltd.) to obtain particle-containing layer-forming composition 4.

Acrylic polymer (AS-563A, Daicel FineChem Co., Ltd., solid content: 27.5% by mass): 167 parts Nonionic surfactant (Naroacty CL95, Sanyo Chemical Industries, Ltd., solid content: 100% by mass): 0.7 parts Anionic surfactant (Rapisol A-90, NOF Corporation, diluted with water to 1% by mass solid content): 114.4 parts Carnauba wax dispersion (Cellosol 524, Chukyo Yushi Co., Ltd., solid content: 30% by mass): 7 parts Carbodiimide compound (Carbodilite V-02-L2, Nisshinbo Chemical Inc., diluted with water to 10% by mass solid content): 20.9 parts Water: 693.0 parts

<Temporary Support 9>
Temporary support 9 was prepared in the same manner as temporary support 5, except that particle-containing layer forming composition 1 was replaced with particle-containing layer forming composition 5, which will be described later.

(Preparation of particle-containing layer-forming composition 5)
The mixture obtained by mixing the following components was filtered using a 6 μm filter (F20, manufactured by Mahle Filter Systems Co., Ltd.), and then subjected to membrane degassing using a 2×6 Radial Flow Superphobic (manufactured by Polypore Co., Ltd.) to obtain particle-containing layer-forming composition 5.

Acrylic polymer (AS-563A, Daicel FineChem Co., Ltd., solid content: 27.5% by mass): 167 parts Nonionic surfactant (Naloacty CL95, Sanyo Chemical Industries, Ltd., solid content: 100% by mass): 0.7 parts Anionic surfactant (Rapisol A-90, NOF Corporation, diluted with water to 1% by mass solid content): 114.4 parts Carbodiimide compound (Carbodilite V-02-L2, Nisshinbo Chemical Inc., diluted with water to 10% by mass solid content): 20.9 parts Water: 700.0 parts

<Photosensitive compositions 1 to 4>
The components selected according to Table 1 were mixed with a mixed solvent of methyl ethyl ketone (Sankyo Chemical Co., Ltd., 60 parts) and propylene glycol monomethyl ether acetate (Showa Denko K.K., 40 parts). The amount of the mixed solvent added was adjusted so that the solids concentration of the photosensitive composition would be 13% by mass. The resulting mixture was filtered using a polytetrafluoroethylene filter with a pore size of 2.0 μm to prepare a photosensitive composition.

<Composition for forming water-soluble resin layer>
The following components were mixed to prepare a composition for forming a water-soluble resin layer.
Ion-exchanged water: 38.12 parts Methanol (Mitsubishi Gas Chemical Company, Inc.): 57.17 parts Kuraray Poval 4-88LA (polyvinyl alcohol, Kuraray Co., Ltd.): 3.22 parts Polyvinylpyrrolidone K-30 (Nippon Shokubai Co., Ltd.): 1.49 parts Megafac F-444 (fluorine-based surfactant, DIC Corporation): 0.0035 parts

<Composition for forming thermoplastic resin layer>
The following components were mixed to prepare a composition for forming a thermoplastic resin layer: BzMA represents benzyl methacrylate, MAA represents methacrylic acid, and AA represents acrylic acid.
Polymer (BzMA / MAA / AA = 78 / 14.5 / 7.5 (mass%), 40 mass%), propylene glycol monomethyl ether acetate (30 mass%), and 1-methoxy-2-propanol (30 mass%) solution: 40.00 parts Polymerizable compound (A-DCP, Shin-Nakamura Chemical Co., Ltd.): 6.00 parts Polymerizable compound (8UX-015A, Taisei Fine Chemical Co., Ltd.): 3.00 parts Polymerizable compound (Aronix TO-2349, Toagosei Co., Ltd.): 1.00 parts Surfactant (Megafac F-552, DIC Corporation): 0.02 parts Additive (phenothiazine): 0.06 parts Additive (CBT-1, Johoku Chemical Industry Co., Ltd.): 0.03 parts Solvent (methyl ethyl ketone): 49.9 parts

<Examples 1 to 13 and Comparative Example 1>
A photosensitive composition selected according to the description in Table 2 was applied using a slit nozzle onto the second surface of a temporary support selected according to the description in Table 2, and then the photosensitive composition was dried at 80°C for 2 minutes to form a photosensitive layer having the thickness described in Table 2. By the above procedure, a transfer film including a temporary support and a photosensitive layer was obtained.

<Examples 14 to 16>
Using a slit nozzle, a thermoplastic resin layer-forming composition was applied to the second surface of a temporary support selected according to the description in Table 2, and then the thermoplastic resin layer-forming composition was dried at 80 ° C for 2 minutes to form a thermoplastic resin layer having a thickness of 6 μm. Using a slit nozzle, a water-soluble resin layer-forming composition was applied to the thermoplastic resin layer, and then the water-soluble resin layer-forming composition was dried at 90 ° C for 2 minutes to form a water-soluble resin layer having a thickness of 1 μm. Using a slit nozzle, a photosensitive composition selected according to the description in Table 2 was applied to the water-soluble resin layer, and then the photosensitive composition was dried at 80 ° C for 2 minutes to form a photosensitive layer having the thickness listed in Table 2. By the above procedure, a transfer film including a temporary support, a thermoplastic resin layer, a water-soluble resin layer, and a photosensitive layer was obtained.

<Evaluation>
The following evaluations were performed using each transfer film produced in the examples and comparative examples. The Invar substrate used in the following evaluations was produced by the following method with reference to JP 2019-214788 A. First, a base material composed of an iron alloy containing 36 mass% nickel, the remainder iron, and unavoidable impurities was prepared. Next, a rolling process, a slitting process, and an annealing process were performed on the base material to obtain an Invar substrate having a thickness of 30 μm. The static friction coefficient of the first surface of the Invar substrate was 0.61, and the dynamic friction coefficient of the first surface of the Invar substrate was 0.52. The surface roughness Ra of the first surface of the Invar substrate was 0.8 μm, and the surface roughness Ra of the second surface of the Invar substrate was 0.9 μm. The Invar substrate corresponds to the metal layer described above.

[Transportability]
A transfer film was laminated to an Invar substrate having a thickness of 30 μm using a vacuum laminator (MCK Corporation, roll temperature: 120° C., linear pressure: 1.0 MPa, linear speed: 0.5 m/min) using a roll-to-roll method, and a transfer layer and temporary support were placed on the first surface of the Invar substrate in this order. The obtained laminate contained an Invar substrate, a transfer layer, and a temporary support in this order. The temporary support of the laminate was visually observed, and the transportability was evaluated according to the following criteria. Of the following criteria, A, B, or C was considered acceptable. The evaluation results are shown in Table 2.
A: No wrinkles are observed at all.
B: Several weak wrinkles of several hundred μm in width are observed per 10 cm width.
C: Ten or more weak wrinkles having a width of several hundred μm are observed per 10 cm width.
D: Strong wrinkles of 1 mm or more in width are observed.

[Patterning ability]
(Preparation of Resist Pattern)
(1) A transfer film was laminated to an Invar substrate having a thickness of 30 μm using a vacuum laminator (MCK Corporation, roll temperature: 100° C., linear pressure: 1.0 MPa, linear speed: 0.5 m/min) by a roll-to-roll method, and a transfer layer and a temporary support were placed in this order on the first surface of the Invar substrate. The obtained laminate contained the Invar substrate, the transfer layer, and the temporary support in this order.
(2) The laminate was subjected to pressure degassing using an autoclave under conditions of 0.6 MPa, 60° C., and 60 minutes.
(3) Using an ultra-high pressure mercury lamp, the transfer layer was exposed through a photomask without peeling off the temporary support. The photomask pattern included a plurality of square light-shielding portions, the length of one side of which was set in steps of 5 μm from 10 μm to 100 μm.
(4) After peeling off the temporary support, a resist pattern was formed by development. Specifically, shower development was carried out using a 1.0% by mass aqueous solution of sodium carbonate at 25°C. The development time was set to 1.5 times the dissolution time of the unexposed area in the 1.0% by mass aqueous solution of sodium carbonate at 25°C.
(5) For the openings defined by the resist pattern, the exposure conditions and development conditions were appropriately changed and the series of operations (1) to (4) above were repeated until the length of one side of the opening corresponding to the 30 μm side of the light-shielding portion of the photomask was exactly 30 μm. Hereinafter, the conditions under which an opening with a side length of 30 μm was formed for the target opening will be referred to as the "standard conditions."
(6) A laminate was produced by the methods described in (1) and (2) above. Using an ultra-high pressure mercury lamp, the transfer layer was exposed under standard conditions through a photomask without peeling off the temporary support. The photomask pattern included a plurality of square light-shielding portions, the length of one side of which was set in steps of 5 μm from 10 μm to 100 μm. After peeling off the temporary support, development was carried out under standard conditions to form a resist pattern.

(minimum resolution)
The resist pattern obtained in (6) above was observed using a scanning electron microscope. The minimum resolution was evaluated based on the length of one side of the smallest opening that was properly resolved in the resist pattern, according to the following criteria. The evaluation results are shown in Table 2.
A: Less than 15 μm B: 15 μm or more and less than 25 μm C: 25 μm or more

(Opening diameter stability)
The resist pattern obtained in (6) above was observed using a scanning electron microscope. The side length of each of 100 openings corresponding to the light-shielding portions in the photomask, each having a side length of 30 μm, was measured. The stability of the opening diameter was evaluated based on the difference between the maximum and minimum values (i.e., [maximum side length] - [minimum side length]) according to the following criteria. The evaluation results are shown in Table 2.
A: Less than 1.0 μm B: 1.0 μm or more and less than 2.0 μm C: 2.0 μm or more and less than 3.0 μm D: 3.0 μm or more

[Appearance of deposition mask]
A resist pattern was formed on an Invar substrate using the method described in (6) of the evaluation of "patterning ability" above. An etching solution (see Example 1 of JP 2018-178142 A) was sprayed at 50°C and a spray pressure of 0.2 MPa to form multiple through-holes in the Invar substrate. The etching time was 1.2 times the minimum time required for through-holes to be formed. The resist pattern was removed using a 4% by mass sodium hydroxide solution to obtain a deposition mask. The deposition mask was observed using an optical microscope, and the appearance of the deposition mask was evaluated according to the following criteria. The evaluation results are shown in Table 2. The through-holes formed by the above method had an opening on the first surface of the Invar substrate and an opening on the second surface of the Invar substrate. With respect to the through holes in the Invar substrate corresponding to the light-shielding portions of the photomasks formed using the transfer films of Examples 1 to 17, each having a side length of 30 μm, the diameter of the through holes on the first surface of the Invar substrate was 27 μm to 33 μm, and the diameter of the through holes on the second surface of the Invar substrate was 17 μm to 23 μm. With respect to the Invar substrates processed for the above evaluation, the openings formed on the first surface of the Invar substrate corresponded to the first openings of the deposition mask, and the openings formed on the second surface of the Invar substrate corresponded to the second openings of the deposition mask. In the deposition mask, the diameter of the second opening was smaller than the diameter of the first opening.
A: No scratches are observed, or scratches are observed that become invisible when the observation angle is changed.
B: Weak scratches are observed regardless of the observation angle.
C: Strong scratches are observed regardless of the observation angle.

[Change in friction coefficient]
The rate of change in the static friction coefficient was calculated according to the following formula, based on the static friction coefficient C1 of the first surface of the Invar substrate used as the raw material for the deposition mask and the static friction coefficient C2 of the first surface of the deposition mask produced in the evaluation of "Appearance of the deposition mask" above. Based on the rate of change in the static friction coefficient, the change in the static friction coefficient was evaluated according to the following criteria. Furthermore, the change in the dynamic friction coefficient was also evaluated in accordance with the evaluation method for the change in the static friction coefficient. The evaluation results are shown in Table 2. The evaluation results for the second surface of the Invar substrate and the second surface of the deposition mask were equivalent to the evaluation results for the first surface of the Invar substrate and the first surface of the deposition mask.
Formula: Friction coefficient change rate (%) = {(|C2-C1|)/C1} x 100
A: Less than 5% B: 5% to 10% C: More than 10% or not measurable

Table 2 shows that the transportability of the transfer films in Examples 1 to 16 was superior to that of the transfer film in Comparative Example 1. Furthermore, Table 2 shows that the deposition masks manufactured using the transfer films in Examples 1 to 16 had fewer appearance defects than those in Comparative Example 1.

10: Metal layer 10F: First surface 10FA: First opening 10H: Through hole 10R: Second surface 10RA: Second opening 20: Transfer layer 21: Resist pattern 100: Vapor deposition mask

Claims (23)

providing a substrate having a first surface and a second surface opposite the first surface;
Preparing a transfer film including a temporary support having a first surface having a static friction coefficient adjusted to 1.0 or less and a second surface opposite to the first surface having the static friction coefficient, and a transfer layer facing the second surface of the temporary support;
bonding the substrate and the transfer film together, and arranging the transfer layer and the temporary support in this order on the first surface of the substrate;
patternwise exposing the transfer layer disposed on the substrate;
forming a resist pattern by performing a development process on the transfer layer after pattern exposure;
performing an etching process on the substrate after forming the resist pattern to form a through hole extending from the first surface of the substrate to the second surface of the substrate;
and removing the resist pattern after forming the through-hole.
A method for manufacturing a deposition mask. providing a substrate having a first surface and a second surface opposite the first surface;
Preparing a transfer film including a temporary support having a first surface having a dynamic friction coefficient adjusted to 0.80 or less and a second surface opposite to the first surface having the dynamic friction coefficient, and a transfer layer facing the second surface of the temporary support;
bonding the substrate and the transfer film together, and arranging the transfer layer and the temporary support in this order on the first surface of the substrate;
patternwise exposing the transfer layer disposed on the substrate;
forming a resist pattern by performing a development process on the transfer layer after pattern exposure;
performing an etching process on the substrate after forming the resist pattern to form a through hole extending from the first surface of the substrate to the second surface of the substrate;
and removing the resist pattern after forming the through-hole.
A method for manufacturing a deposition mask. The method for manufacturing a vapor deposition mask according to claim 1 or 2, wherein the substrate includes a metal layer having an average thickness of 30 μm or less. The method for manufacturing a deposition mask according to claim 3, wherein the metal layer contains iron. The method for manufacturing a deposition mask according to any one of claims 1 to 4, wherein the surface roughness Ra of the first surface of the substrate is 0.1 μm to 5.0 μm. The method for manufacturing a deposition mask according to any one of claims 1 to 5, wherein the diameter of the opening defined by the resist pattern is 35 μm or less. The method for manufacturing a vapor deposition mask according to any one of claims 1 to 6, wherein the diameter of the through holes on the first surface of the substrate is 35 μm or less. a temporary support having a first surface having a static friction coefficient adjusted to 1.0 or less and a second surface opposite to the first surface;
a transfer layer facing the second surface of the temporary support,
Transfer film for forming deposition masks. a temporary support having a first surface having a dynamic friction coefficient adjusted to 0.80 or less and a second surface opposite to the first surface;
a transfer layer facing the second surface of the temporary support,
Transfer film for forming deposition masks. The transfer film for forming a vapor deposition mask according to claim 8 or claim 9, wherein the transfer layer is a photosensitive layer. The transfer film for forming a vapor deposition mask according to claim 8 or claim 9, wherein the transfer layer includes a photosensitive layer and an intermediate layer. The transfer film for forming a vapor deposition mask according to claim 10 or 11, wherein the photosensitive layer is a negative-type photosensitive layer. The transfer film for forming a vapor deposition mask according to claim 10 or 11, wherein the photosensitive layer is a positive-type photosensitive layer. The transfer film for forming a vapor deposition mask according to any one of claims 8 to 13, wherein the average thickness of the temporary support is 50 μm or less. The transfer film for forming a vapor deposition mask according to any one of claims 8 to 14, wherein the haze value of the temporary support is 5% or less. A deposition mask having a first surface, a second surface opposite to the first surface, and a plurality of through holes,
Produced using the transfer film for forming a deposition mask according to any one of claims 8 to 15,
each of the plurality of through holes has a first opening in the first surface and a second opening in the second surface;
a ratio of a static friction coefficient of at least one surface selected from the group consisting of the first surface and the second surface to a static friction coefficient of a base material used as a raw material of the deposition mask is 1.1 or less;
Deposition mask. A deposition mask having a first surface, a second surface opposite to the first surface, and a plurality of through holes,
Produced using the transfer film for forming a deposition mask according to any one of claims 8 to 15,
each of the plurality of through holes has a first opening in the first surface and a second opening in the second surface;
a ratio of a dynamic friction coefficient of at least one surface selected from the group consisting of the first surface and the second surface to a dynamic friction coefficient of a base material used as a raw material of the deposition mask is 1.1 or less;
Deposition mask. The deposition mask according to claim 16 or 17, wherein the static friction coefficient of at least one surface selected from the group consisting of the first surface and the second surface is 1.0 or less. The deposition mask according to any one of claims 16 to 18, wherein the dynamic friction coefficient of at least one surface selected from the group consisting of the first surface and the second surface is 0.80 or less. The deposition mask according to any one of claims 16 to 19, wherein the diameter of the first opening is 35 μm or less. The deposition mask according to any one of claims 16 to 20, wherein the surface roughness Ra of the first surface is 1.0 μm or less. The deposition mask according to any one of claims 16 to 21, comprising a metal layer having an average thickness of 30 μm or less. The deposition mask of claim 22 , wherein the metal layer comprises iron.