JP7779778B2 - Substrate polishing apparatus and substrate polishing method - Google Patents

Description

The present invention relates to a substrate polishing apparatus and a substrate polishing method.

Substrate polishing apparatuses are known for polishing substrates such as wafers. To improve precision, such substrate polishing apparatuses perform multiple processes, including polishing using CMP (Chemical Mechanical Polishing).

In the substrate polishing method described in Patent Document 1, a polishing pad smaller than the object to be processed is brought into contact with the object and moved relative to it to perform the polishing process, and then a polishing pad larger than the object to be processed is brought into contact with the object and moved relative to it to perform the polishing process. In the substrate processing apparatus described in Patent Document 2, the same substrate is polished in two stages using two polishing units.

JP 2017-163047 A Japanese Patent Application Laid-Open No. 2020-19115

The above-mentioned substrate polishing methods or substrate processing apparatuses may not be able to prepare sufficient polishing conditions before polishing, or may require long processing times to prepare sufficient polishing conditions.

The present invention was made in consideration of the above-mentioned circumstances, and one of its objectives is to provide highly accurate substrates through efficient processing.

According to one embodiment of the present invention, a substrate polishing apparatus performs a polishing process on a processing surface of a substrate and includes a grinding module in which a first grinding member and a second grinding member having a larger maximum diameter than the first grinding member are disposed, a polishing module including a polishing member, and a control device that controls the grinding module and the polishing module, wherein the control device controls the grinding module to perform a first grinding on a portion of the processing surface with the first grinding member and a second grinding on the processing surface with the second grinding member, and controls the polishing module to polish the processing surface after the first grinding and the second grinding have been performed.

According to another embodiment of the present invention, a substrate polishing method is a method for polishing a processing surface of a substrate, comprising: performing a first grinding on a portion of the processing surface using a first grinding member; performing a second grinding on the processing surface using a second grinding member having a larger maximum diameter than the first grinding member; and polishing the processing surface that has been subjected to the first grinding and the second grinding using a polishing member.

FIG. 1 is a conceptual diagram showing a substrate polishing apparatus according to the first embodiment. FIG. 2 is a cross-sectional view schematically showing the load unit according to the first embodiment. FIG. 3 is a conceptual diagram showing the grinding module according to the first embodiment. FIG. 4A is a conceptual diagram showing the first grinding member according to the first embodiment. FIG. 4B is a conceptual diagram showing the first grinding member according to the first embodiment. FIG. 5A is a conceptual diagram showing the second grinding member according to the first embodiment. FIG. 5B is a conceptual diagram showing the second grinding member according to the first embodiment. FIG. 6 is a conceptual diagram for explaining the first grinding, the second grinding, and the maximum diameter of the substrate. FIG. 7 is a conceptual diagram showing the detector according to the first embodiment. FIG. 8 is a conceptual diagram for explaining the setting of the range of the first grinding. FIG. 9 is a conceptual diagram showing the second transport unit. FIG. 10 is a perspective view schematically showing the polishing module. FIG. 11 is a conceptual diagram showing a top ring. FIG. 12 is a conceptual diagram showing the configuration of the control device. FIG. 13 is a flowchart showing the flow of the substrate polishing method according to the first embodiment. FIG. 14 is a flowchart showing the flow of the substrate polishing method according to Modification 1-1. FIG. 15 is a flowchart showing the flow of the substrate polishing method according to Modification 1-2. FIG. 16 is a conceptual diagram showing a detector according to Modification 1-3. FIG. 17A is a conceptual diagram showing a first grinding member according to Modification 1-4. FIG. 17B is a conceptual diagram showing a first grinding member according to Modification 1-4. FIG. 18 is a conceptual diagram for explaining a substrate polishing apparatus according to the second embodiment. FIG. 19 is a conceptual diagram for explaining a grinding module according to the second embodiment. FIG. 20 is a flowchart showing the flow of the substrate polishing method according to the second embodiment. FIG. 21A is a conceptual diagram showing a top ring according to Modification 2-1 during grinding. FIG. 21B is a conceptual diagram showing a top ring according to Modification 2-1 during polishing. FIG. 22 is a conceptual diagram for explaining a substrate polishing method according to Modification 2-2. FIG. 23 is a conceptual diagram for explaining a substrate polishing method according to Modification 2-2. FIG. 24A is a conceptual diagram for explaining grinding on a fixed abrasive platen in a substrate polishing method according to Modification 2-2. FIG. 24B is a conceptual diagram for explaining the substrate polishing method according to Modification 2-2.

Embodiments of the present invention will now be described with reference to the drawings. In the drawings described below, identical or corresponding components will be designated by the same reference numerals, and duplicate descriptions will be omitted.

1 is a plan view schematically showing the overall configuration of a substrate polishing apparatus 1000 according to a first embodiment. The substrate polishing apparatus 1000 shown in FIG. 1 includes a load unit 100, a first transfer unit 200A, a second transfer unit 200B, a grinding module 300, a polishing module 400, a drying module 500, an unload unit 600, an inverting machine 800, and a control device 900. Each component of the substrate polishing apparatus 1000 is controlled by the control device 900.

<Load unit>
The load unit 100 introduces the substrate WF into the substrate polishing apparatus 1000 before it is subjected to processing such as grinding and polishing.

The type, size, and shape of the substrate WF are not particularly limited. The substrate WF can be a semiconductor substrate, particularly a disk-shaped substrate or a rectangular substrate. The substrate WF is preferably a rectangular substrate. While the dimensions of circular semiconductor substrates are determined by standards such as SEMI standards, the dimensions of rectangular substrates such as CCL (Copper Clad Laminate) substrates, PCB (Printed Circuit Board) substrates, photomask substrates, and display panels are not determined by standards, and therefore substrates of various dimensions are possible. These rectangular substrates may have significant warpage or thickness variations, resulting in a large amount of grinding or polishing. Meanwhile, the demand for flatness for these rectangular substrates is also increasing. Therefore, rectangular substrates are highly necessary to provide high-precision substrates through efficient processing, and are preferably applied to this embodiment. The following explanation uses an example in which the substrate WF is a rectangular substrate.

2 is a cross-sectional view schematically illustrating a load unit 100 according to this embodiment. The load unit 100 includes a housing 102. The housing 102 includes an entrance opening 104 on the side that receives the substrate WF. In the embodiment illustrated in FIG. 2, the entrance side is on the right side. The load unit 100 receives the substrate WF to be processed through the entrance opening 104. Upstream of the load unit 100 (on the right side in FIG. 2), a substrate processing apparatus is disposed that performs processing steps prior to the processing of the substrate WF by the substrate polishing apparatus 1000. The load unit 100 includes an ID reader 106. The ID reader 106 reads the ID of the substrate WF received through the entrance opening 104. The substrate polishing apparatus 1000 performs various processes on the substrate WF according to the read ID. The ID reader 106 is not necessary. The load unit 100 is preferably configured to comply with the SMEMA (Surface Mount Equipment Manufacturers Association) Mechanical Equipment Interface Standard (IPC-SMEMA-9851).

The load unit 100 is equipped with a plurality of transport rollers 202 for transporting the substrate WF. The transport rollers 202 are attached to roller shafts 204 (FIG. 1) and are rotated by a motor (not shown) via gears (not shown). By rotating the transport rollers 202, the substrate WF on the transport rollers 202 can be transported in a predetermined direction (leftward in FIG. 2). The housing 102 of the load unit 100 has an exit opening 108 for the substrate WF. The load unit 100 has a sensor 112 for detecting the presence or absence of the substrate WF at a predetermined position on the transport rollers 202. The sensor 112 can be any type of sensor, for example, an optical sensor. In the embodiment shown in FIG. 2, three sensors 112 are provided within the housing 102: sensor 112a provided near the entrance opening 104, sensor 112b provided near the center of the load unit 100, and sensor 112c provided near the exit opening 108. The operation of the load unit 100 can be controlled in response to the detection of the substrate WF by these sensors 112. For example, when sensor 112a near the entrance opening 104 detects the presence of the substrate WF, the rotation of the transport rollers 202 within the load unit 100 may be initiated, or the rotation speed of the transport rollers 202 may be changed. Furthermore, when sensor 112c near the exit opening 108 detects the presence of the substrate WF, the entrance shutter 218 of the subsequent first transport unit 200A may be opened.

The transport mechanism of the load unit 100 includes multiple transport rollers 202 and multiple roller shafts 204 to which the transport rollers 202 are attached. In the example of FIG. 1 , three transport rollers 202 are attached to each roller shaft 204, but this is not a limitation. The transport rollers 202 may be attached at any position on the roller shaft 204 as long as they can stably transport the substrate WF. However, since the transport rollers 202 come into contact with the substrate WF, they should be positioned so that they contact an area of the substrate WF that is the target of processing without causing any problems. The transport rollers 202 of the load unit 100 may be made of a conductive polymer. The transport rollers 202 are electrically grounded via the roller shafts 204, etc. This is to prevent the substrate WF from becoming charged and damaging the substrate WF. The load unit 100 may also be provided with an ionizer (not shown) to prevent the substrate WF from becoming charged.

The load unit 100 is provided with auxiliary rollers 214 near the entrance opening 104 and the exit opening 108. The auxiliary rollers 214 are positioned at approximately the same height as the transport rollers 202. The auxiliary rollers 214 support the substrate WF so that it does not fall between the unit and other units during transport. The auxiliary rollers 214 are not connected to a power source and are configured to be freely rotatable. Note that the configuration of the load unit 100 is not particularly limited as long as it is possible to perform the first grinding, second grinding, and polishing by the polishing module 400 described below.

<First conveying unit>
The first transport unit 200A transports the substrate WF unloaded from the load unit 100 to the grinding module 300, and transports the substrate WF ground in the grinding module 300 to the inverter 800. The configuration of the first transport unit 200A is not particularly limited as long as it can perform these transports. In the example of FIG. 1 , the first transport unit 200A includes a roller shaft 204, transport rollers 202 attached to the roller shaft 204, and a cleaning nozzle 284. The transport rollers 202 are rotated by a motor (not shown) via gears (not shown). The rotation of the transport rollers 202 transports the substrate WF on the transport rollers. The cleaning nozzle 284 supplies a cleaning liquid to the substrate WF for cleaning the substrate WF ground in the grinding module 300. The first transport unit 200A may include a stopper or arm (not shown). For example, the first transport unit 200A can move the substrate WF stopped by the stopper onto the table 73 ( FIG. 3 ) of the grinding module 300 using the arm. Furthermore, the arm can move the substrate WF that has been ground by the grinding module 300 onto the transport rollers 202 of the first transport unit 200A.

<Grinding module>
3 is a perspective view schematically showing the configuration of the grinding module 300. The grinding module 300 includes a first arm 71, a second arm 72, a table 73, a table driving mechanism 730, a first head 710 attached to the first arm 71, a second head 720 attached to the second arm 72, and a processing liquid supply system 74. In the illustrated example, the first head 710 and the second head 720 are shown as being schematically rectangular parallelepiped in shape, but are not limited to this.

The first arm 71 and the second arm 72 support the first head 710 and the second head 720, respectively, so that they can swing along the processing surface of the substrate WF. The operation of the first arm 71 and the second arm 72 is controlled by a first grinding control unit 953 ( FIG. 12 ) and a second grinding control unit 954, respectively, which will be described later. The first arm 71 and the second arm 72 are configured to be rotatable to a retracted position where the first head 71 or the second head 72 is located at a position other than above the processing surface so as not to interfere with each other's movement. In the illustrated example, the second arm 72 retracts the second head 720 to a retracted position away from the processing surface. The mechanism for moving the first head 710 and the second head 720 is not particularly limited as long as it can move the first head 710 and the second head 720 to the desired position on the processing surface and the retracted position; an XY stage or the like may be used. The first head 710 and the second head 720 may rotate about the central axes of the first pad surface 712 and the second pad surface 722, which will be described later, respectively. From the viewpoint of selectively grinding a narrower range, the first head 710 may rotate about an axis tilted from the central axis.

The table 73 functions as a substrate support that supports the substrate WF. The substrate WF is placed on the table 73 with its processing surface facing vertically upward. In other words, grinding is performed in the grinding module 300 using a face-up method. The face-up method facilitates partial grinding and allows for the construction of a compact grinding module using grinding members smaller than the substrate WF. The surface of the table 73 is preferably made of a porous material that allows air to be drawn in, and the substrate WF is fixed by suction. The table 73 can be rotated around the rotation axis Ax1 by the table drive mechanism 730. The table 73 may be configured to perform angular rotation or scrolling motion on the substrate WF by the table drive mechanism 730, or the table 73 may be rotated and then stopped at any position on the table 73. By combining this motion with the swinging motion of the first arm 71 and the second arm 72, the first head 710 and the second head 720 can be moved to any position on the substrate WF.

The processing liquid supply system 74 includes a deionized water pipe 741 for supplying deionized water (DIW) to the processing surface of the substrate WF. The deionized water pipe 741 has a first end connected to a deionized water supply source (not shown) and a second end located above the substrate WF. The control device 900 controls the supply of deionized water by controlling the opening and closing of an opening/closing valve (not shown) installed in the deionized water pipe 741.

The processing liquid supply system 74 includes a grinding liquid pipe 742 for supplying a grinding liquid (GF), such as pure water or a chemical liquid, to the processing surface of the substrate WF. The first end of the grinding liquid pipe 742 is connected to a grinding liquid supply source (not shown), and the second end is located above the substrate WF. The control device 900 controls the supply of the grinding liquid by controlling the opening and closing of an opening/closing valve (not shown) installed in the grinding liquid pipe 742.

Alternatively or additionally, at least one of the pure water pipe 741 and the grinding fluid pipe 742 may be arranged inside or along the surface of the first arm 71 and the second arm 72, and may be configured to supply pure water or grinding fluid to the processing surface from the first head 710 and the second head 720. There are no particular limitations on the method of supplying the liquid to the processing surface.

Figure 4A is a conceptual diagram illustrating the first grinding member G1 arranged on the first head 710. The first head 710 includes a first pressing mechanism 711 and a first pressing pad 712. The polishing tape T1A is arranged on the first pressing pad 712 so that it can slide along the first pad surface 712S (arrow Ar11). The polishing tape T1A is the first grinding member G1 that comes into contact with and grinds the processing surface in the first grinding described below. The manner in which the first pressing mechanism 711 presses the first pressing pad 712 is not particularly limited as long as it presses against the first pressing pad 712. The polishing tape T1A is pressed against the substrate WF by the pressure from the first pressing pad 712.

The polishing tape T1A is fed by the first tape feeding mechanism 7100 and slides over the first pressure pad 712. The first tape feeding mechanism 7100 includes a supply reel 7110A, support rods 7120A, 7130A, 7130B, 7120B, and a take-up reel 7110B. The supply reel 7110A and the take-up reel 7110B are cylindrical, and the polishing tape T1A is wound around the cylindrical surface. The supply reel 7110A and the take-up reel 7110B rotate around their cylindrical axes, allowing the polishing tape T1A to be fed out and taken up, respectively. Support rods 7120A, 7130A, 7130B, and 7120B are fixed to the first head 710 or the first arm 71, support the polishing tape T1A, and define the movement path of the polishing tape T1A.

4B is a conceptual diagram illustrating the maximum diameter L1 of the first grinding member G1. FIG. 4B is a plan view schematically illustrating the first pad surface 712S of the first pressing pad 712. In the first head 710 of this embodiment, polishing tapes T1A and T1B are disposed on the first pad surface 712S as the first grinding member G1. In the illustrated example, the sliding of the polishing tape T1B on the first pad surface is schematically indicated by arrow Ar12. The polishing tape T1B can be fed by the same tape feeding mechanism as the polishing tape T1A.

The maximum diameter L1 of the first grinding member G1 is the distance between the longest two points on the first grinding member (polishing tapes T1A and T1B) placed on the first pad surface 712S of the first head 710. In the illustrated example, it is the distance between the diagonals of a rectangle surrounding the parallel-arranged polishing tapes T1A and T1B. In other words, the maximum diameter L1 of the first grinding member G1 corresponds to the diameter of the circumscribing circle C1 of the polishing tape placed on the first pad surface 712S.

Figure 5A is a conceptual diagram illustrating the second grinding member G2 arranged on the second head 720. The second head 720 includes a second pressing mechanism 721 and a second pressing pad 722. The polishing tape T2A is arranged on the second pressing pad 722 so that it can slide along the second pad surface 722S (arrow Ar21). The polishing tape T2A is the second grinding member G2 that comes into contact with and grinds the processing surface in the second grinding described below. The manner in which the second pressing mechanism 721 presses the second pressing pad 722 is not particularly limited as long as it presses the second pressing pad 722. The polishing tape T2A is pressed against the substrate WF by the pressure from the second pressing pad 722.

The polishing tape T2A is fed by the second tape feeding mechanism 7200 and slides over the second pressure pad 722. The second tape feeding mechanism 7200 includes a supply reel 7210A, support rods 7220A, 7230A, 7230B, and 7220B, and a take-up reel 7210B. The supply reel 7210A and the take-up reel 7210B are cylindrical, and the polishing tape T2A is wound around the cylindrical surface. The supply reel 7210A and the take-up reel 7210B rotate around their cylindrical axes, allowing the polishing tape T2A to be unwound and wound, respectively. Support rods 7220A, 7230A, 7230B, and 7220B are fixed to the second head 720 or the second arm 72 and support the polishing tape T2A, defining the movement path of the polishing tape T2A.

Figure 5B is a conceptual diagram illustrating the maximum diameter L2 of the second grinding member G2. Figure 5B is a plan view schematically illustrating the second pad surface 722S of the second pressing pad 722. In the second head 720 of this embodiment, polishing tapes T2A and T2B are arranged on the second pad surface 722S as the second grinding member G2. In the illustrated example, the sliding of the polishing tape T2B on the second pad surface is schematically indicated by arrow Ar22. The polishing tape T2B can be fed by the same tape feeding mechanism as the polishing tape T2A.

The maximum diameter L2 of the second grinding member G2 is the distance between the longest two points on the second grinding member (polishing tapes T2A and T2B) placed on the second pad surface 722S of the second head 720. In the illustrated example, it is the distance between the diagonals of a rectangle surrounding the parallel-arranged polishing tapes T2A and T2B. In other words, the maximum diameter L2 of the second grinding member G2 corresponds to the diameter of the circumscribed circle C2 of the polishing tape placed on the second pad surface 722S.

The materials of the first grinding member G1 and the second grinding member G2 are not particularly limited. From the perspective of performing processing more efficiently and at a higher speed than the polishing by the polishing module 400 described below, or from the perspective of performing rough grinding at a higher speed, it is preferable that the first grinding member G1 and the second grinding member G2 contain a material with a higher rigidity or elastic modulus than the polishing member of the polishing module 400. For example, as described above, the first grinding member G1 and the second grinding member G2 can be a polishing tape in which abrasive grains made of the above material, such as diamond abrasive grains, are arranged on a base member. In this case, a resin coating can be applied to the abrasive grain surface to prevent the abrasive grains from falling off, or the abrasive grains themselves can be attached to the base member by electrodeposition. Examples of materials for the base member include at least one of polyimide, rubber, PET, resin materials, composite materials in which these materials are impregnated with fibers, and metal foil, or a combination thereof.

The number of polishing tapes placed on the first pad surface 712 or 2722 as the first polishing member G1 or second polishing member G2 is not particularly limited, and may be one, three, or more. If the polishing tape is too wide, it may be difficult for the polishing tape to slide and to obtain the polishing tape, so it is preferable to place multiple polishing tapes on one pad surface, as in the example shown.

Figure 6 is a conceptual diagram for explaining the first grinding and second grinding. Hereinafter, grinding performed by the first grinding member G1 in contact with the substrate WF will be referred to as the first grinding, and grinding performed by the second grinding member G2 in contact with the substrate WF will be referred to as the second grinding. The maximum diameter L3 of the processing surface PS of the substrate WF is defined as the distance between the longest two points along the processing surface PS. In the case of the rectangular substrate shown in the figure, the maximum diameter L3 corresponds to the length of the diagonal of the rectangular processing surface PS.

In Figure 6, rectangle R1 (dashed line) indicates the first grinding surface, which is the portion of the polishing tape, which is the first grinding member G1, that comes into contact with the substrate WF. The maximum diameter L1 of the first grinding member G1 is the diameter of the circumscribing circle C1 (dashed line) of rectangle R1. Rectangle R2 (dashed line) indicates the second grinding surface, which is the portion of the polishing tape, which is the second grinding member G2, that comes into contact with the substrate WF. The maximum diameter L2 of the second grinding member G2 is the diameter of the circumscribing circle C2 (dashed line) of rectangle R2.

The maximum diameter L2 of the second grinding member G2 is larger than the maximum diameter L1 of the first grinding member G1. This allows for more localized grinding in the first grinding than in the second grinding. Furthermore, it is preferable that the maximum diameter L2 of the second grinding member G2 is larger than half the maximum diameter L3 of the processing surface PS. This allows for easy full-surface grinding in the second grinding using the rotating table 73. It is preferable that the maximum diameter L1 of the first grinding member G1 is smaller than half the maximum diameter L3 of the processing surface PS. This allows for easy partial grinding. The maximum diameter L2 of the second grinding member G2 is smaller than the maximum diameter L3 of the processing surface PS. This allows for a compact configuration of the grinding module 300, down to a size slightly larger than the substrate WF.

In the following embodiments, grinding refers to removing portions of the surface of the substrate WF by making cuts in the processing surface PS through the movement of a grinding member. Polishing refers to removing portions of the surface of the substrate WF by sliding a pressed polishing member against the processing surface PS. Grinding and polishing also include removing portions of the surface of the substrate WF directly through a chemical reaction with a grinding or polishing liquid, or by utilizing a chemical reaction. Partial grinding, which grinds the processing surface PS, refers to grinding that grinds only a portion of the processing surface PS, while full surface grinding refers to grinding that grinds the entire processing surface PS. Furthermore, partial polishing refers to polishing that polishes only a portion of the processing surface PS, and full surface polishing refers to polishing that polishes the entire processing surface PS.

In this embodiment, the second grinding is performed after the first grinding. After grinding convex portions and the like in the first grinding, a wider area of the substrate WF is ground in the second grinding. This allows the polishing conditions to be adjusted before polishing in the polishing module 400, enabling efficient and highly accurate polishing.

In this embodiment, the first grinding member G1 and the second grinding member G2 are the same type of grinding member, i.e., abrasive tape. However, the first grinding member G1 and the second grinding member G2 may be different grinding members. The first grinding and the second grinding may be performed in the same or different grinding modules. For example, a face-up grinding module may be further provided, and the first grinding or the second grinding may be performed in that grinding module using a fixed abrasive platen as the grinding member. Both the first grinding and the second grinding may be performed using a fixed abrasive platen.

Figure 7 is a conceptual diagram that schematically illustrates a measuring device 750 according to this embodiment. The grinding module 300 includes a third arm 75 and a measuring device 750 attached to the third arm 75. The second arm 72 and the processing liquid supply system 74 are not shown in Figure 7.

The measuring device 750 measures the shape of the processed surface PS of the substrate WF. Hereinafter, shape measurement refers to measuring the shape of the processed surface PS. Shape data indicating the shape of the processed surface PS measured by the measuring device 750 is output to the control device 900. Alternatively, the control device 900 may process the measurement signal detected by the measuring device 750 to create the shape data. As an example, the measuring device 750 may be a Wet-ITM (In-line Thickness Monitor). A Wet-ITM has a detection head that exists on the substrate in a non-contact state and moves across the entire surface of the substrate to detect (measure) the film thickness distribution (or the distribution of information related to film thickness) of a film formed on the substrate WF. For example, the detection head moves along a trajectory that passes through the center of the substrate WF to detect the film thickness distribution on the rotating substrate WF. As long as the film thickness distribution within the desired range of the processed surface PS can be detected, the measuring device 750 does not need to be attached to the third arm 75. For example, the measuring device 750 may be attached to the first arm 71 or the second arm 72, or the measuring device 750 may be moved by an XY stage. Note that if information about the shape of the processing surface PS is obtained in advance, the substrate polishing apparatus 1000 does not need to include the measuring device 750, and the substrate polishing method does not need to include shape measurement.

In this embodiment, as described below, shape measurement can be performed while the second grinding is being performed. In this case, the second arm 72 and the third arm 75 may be moved so as not to come into contact with each other, and shape measurement may be performed continuously or intermittently while the second grinding is being performed. The same applies to the case where shape measurement is performed while the first grinding is being performed in the modified example described below.

The measuring device 750 can be any measuring device using any detection method other than Wet-ITM. For example, available detection methods include non-contact detection methods such as well-known eddy current and optical detection methods, as well as contact detection methods. A contact detection method can employ, for example, electrical resistance detection, in which a detection head equipped with an electrically conductive probe is prepared, and the probe is brought into contact with the substrate WF and scanned across the surface of the substrate WF while energized to detect the distribution of film resistance. Another contact detection method can employ a step detection method in which a probe is brought into contact with the surface of the substrate WF and scanned across the surface of the substrate WF, and the vertical movement of the probe is monitored to detect the distribution of surface irregularities. Both contact and non-contact detection methods obtain film thickness or a signal corresponding to the film thickness. In optical detection, film thickness differences can be recognized from differences in the color tone of the substrate WF surface in addition to the amount of reflected light from the projected light. In this way, the measurement device 750 irradiates the processing surface PS with light, and receives light from the substrate WF based on the irradiated light, such as reflected light or infrared light from the processing surface PS, and based on the analysis of the measurement data obtained, the control device 900 can obtain data on the thickness distribution of the film formed on the substrate WF. This makes it possible to obtain information about the shape of the processing surface PS efficiently and without contact, and to perform the grinding process efficiently based on this information.

Figure 8 is a conceptual diagram for explaining the setting of the first grinding range. For example, when the measuring device 750 detects the convex portions WF1 and WF2 on the substrate WF, the first arm 71 and the table driving mechanism 730 are controlled so that the convex portions WF1 and WF2 are included in the movement range of the first head 710 caused by the swinging of the first arm 71.

<Turning machine>
Returning to FIG. 1 , the inverter 800 inverts the substrate WF. In the first transport unit 200A, the processing surface PS of the substrate WF faces vertically upward. The inverter 800 inverts the substrate WF so that the processing surface PS of the substrate WF faces vertically downward. There are no particular limitations on the type of inverter 800 as long as it can invert the substrate WF. The substrate WF inverted by the inverter 800 is carried out to the second transport unit 200B.

<Second conveying unit>
FIG. 9 is a cross-sectional view schematically illustrating the configuration of the second transport unit 200B. The second transport unit 200B transports the substrate WF inverted by the inverter 800 to the polishing module 400. The second transport unit 200B is disposed in a housing 201 and includes a plurality of transport rollers 202 for transporting the substrate WF. By rotating the transport rollers 202, the substrate WF on the transport rollers 202 can be transported in a predetermined direction. The transport rollers 202 of the second transport unit 200B may be formed from a conductive polymer or a non-conductive polymer. The transport rollers 202 are attached to roller shafts 204 and are driven by a motor 208 via gears 206. The motor 208 may be a servo motor. Using the servo motor makes it possible to control the rotation speed of the roller shaft 204 and the transport rollers 202, i.e., the transport speed of the substrate WF. The gear 206 may be a magnetic gear. Because the magnetic gear is a non-contact power transmission mechanism, it does not generate fine particles due to wear, as occurs with contact-type gears, and does not require maintenance such as lubrication. In the illustrated example, the second transport unit 200B has a sensor 216 for detecting the presence or absence of a substrate WF at a predetermined position on the transport roller 202. The sensor 216 can be of any type, such as an optical sensor. In the illustrated example, seven sensors 216 (216a to 216g) are provided in the transport unit 200. The control device 900 ( FIG. 1 ) can control the operation of the second transport unit 200 in response to the detection of the substrate WF by these sensors 216a to 216g. The second transport unit 200B has an entrance shutter 218 that can be opened and closed to accept the substrate WF into the second transport unit 200B. The second transport unit 200B has an exit shutter 286 that can be opened and closed to transport the substrate WF out of the second transport unit 200B.

The second transport unit 200B has a stopper 220. The stopper 220 is connected to a stopper moving mechanism 222, and the stopper 220 can enter the transport path of the substrate WF moving on the transport rollers 202. When the stopper 220 is positioned within the transport path of the substrate WF, the side of the substrate WF moving on the transport rollers 202 comes into contact with the stopper 220, allowing the moving substrate WF to be stopped at the position of the stopper 220. Furthermore, when the stopper 220 is in a position retracted from the transport path of the substrate WF, the substrate WF can move on the transport rollers 202. The position at which the stopper 220 stops the substrate WF is a position (substrate transfer position) at which the pusher 230, described below, can receive the substrate WF on the transport rollers 202.

The second transport unit 200B has a pusher 230. The pusher 230 is configured to be able to lift the substrate WF that is on the multiple transport rollers 202 so that it is away from the multiple transport rollers 202. The pusher 230 is also configured to be able to transfer the substrate WF that it is holding to the top ring 302 of the polishing module 400.

The pusher 230 includes a first stage 232 and a second stage 270. The first stage 232 is a stage for supporting the retainer member 3 ( FIG. 11 ) of the top ring 302 when transferring the substrate WF from the pusher 230 to the top ring 302. The first stage 232 includes a plurality of support columns 234 for supporting the retainer member 3 of the top ring 302. The second stage 270 is a stage for receiving the substrate WF on the transport rollers 202. The second stage 270 includes a plurality of support columns 272 for receiving the substrate WF on the transport rollers 202. The first stage 232 and the second stage 270 are movable in the height direction by a first lifting mechanism. The second stage 270 is further movable in the height direction relative to the first stage 232 by a second lifting mechanism. When the first and second lifting mechanisms raise the first and second stages 232 and 270, portions of the support columns 234 of the first stage 232 and the support columns 272 of the second stage 270 pass between the transport rollers 202 and the roller shafts 204 and reach a position higher than the transport rollers 202. The substrate WF transported on the transport rollers 202 is stopped at the substrate transfer position by the stopper 220. The first lifting mechanism then raises the first and second stages 232 and 270, and the substrate WF on the transport rollers 202 is lifted by the support columns 272 of the second stage 270. The second lifting mechanism then raises the second stage 270 holding the substrate WF, while the retainer member 3 of the top ring 302 is supported by the support columns 234 of the first stage 232. The substrate WF on the second stage 270 is received and held by the top ring 302 by vacuum suction.

The second transport unit 200B has a cleaning section. This cleaning section has cleaning nozzles 284. The cleaning nozzles 284 have an upper cleaning nozzle 284a arranged above the transport rollers 202 and a lower cleaning nozzle 284b arranged below. The upper cleaning nozzle 284a and the lower cleaning nozzle 284b are connected to a cleaning liquid supply source (not shown). The upper cleaning nozzle 284a is configured to supply cleaning liquid to the upper surface of the substrate WF transported on the transport rollers 202. The lower cleaning nozzle 284b is configured to supply cleaning liquid to the lower surface of the substrate WF transported on the transport rollers 202. The upper cleaning nozzle 284a and the lower cleaning nozzle 284b have a width that is approximately the same as or greater than the width of the substrate WF transported on the transport rollers 202, and are configured so that the entire surface of the substrate WF is cleaned as the substrate WF is transported on the transport rollers 202. The cleaning section is located downstream of the substrate transfer location of the pusher 230.

The second transport unit 200B receives the substrate WF polished in the polishing module 400 from the top ring 302, cleans it as appropriate, and then transports it to the drying module 500. There are no particular limitations on the configuration of the second transport unit 200B, as long as it can transport the substrate WF to and from the polishing module 400 and transport it to the drying module 500.

<Polishing module>
FIG. 10 is a perspective view schematically illustrating the configuration of the polishing module 400. The polishing module 400 polishes the substrate WF. While the polishing method is not particularly limited, CMP polishing is preferred. Furthermore, from the perspective of accurately processing or finishing the entire substrate WF, full-surface polishing is preferred. In the substrate polishing method according to this embodiment, the first grinding member G1 and the second grinding member G2 are used in combination to quickly eliminate the overall thickness variation of the substrate WF (e.g., the total thickness variation (TTV), which is the difference between the maximum and minimum distances from the rear surface reference surface, as described below). In addition, the polishing member can be used to perform low-speed finish polishing, which allows for higher throughput and more accurate processing than full-surface polishing using only a polishing member, which requires a longer processing time.

The polishing module 400 includes a polishing table 350 and a top ring 302 constituting a polishing head that holds a substrate WF (the object to be polished) and presses it against a polishing surface 352a on the polishing table 350. The polishing table 350 is connected to a polishing table rotation motor (not shown) located below the polishing table 350 via a table shaft 351 and is rotatable about the table shaft 351. A polishing pad 352 is attached to the upper surface of the polishing table 350, and the surface of the polishing pad 352 forms a polishing surface 352a that polishes the substrate. The polishing pad 352 functions as a polishing member PM that contacts and polishes the processing surface PS. The processing speed of the polishing member PM may be slower than that of a grinding member if the polishing member PM has low rigidity and small abrasive grain size. However, polishing with the polishing member PM reduces the surface roughness of the object to be polished, making it less likely to scratch the object to be polished and suitable for finish processing. The polishing pad 352 may be attached via a layer that facilitates removal from the polishing table 350. Such a layer may be, for example, a silicone layer or a fluorine-based resin layer, and those described in, for example, Japanese Patent Application Laid-Open No. 2014-176950 may be used.

The type of polishing pad 352 is not particularly limited, and the following can be used, for example. Various polishing pads are available on the market, including SUBA800 ("SUBA" is a registered trademark), IC-1000, IC-1000/SUBA400 (two-layer cloth) manufactured by Nitta Haas Co., Ltd., and Surfin xxx-5 and Surfin 000 ("surfin" is a registered trademark) manufactured by Fujimi Incorporated. SUBA800, Surfin xxx-5, and Surfin 000 are nonwoven fabrics made of fibers solidified with urethane resin, while IC-1000 is a rigid foamed polyurethane (single layer). Foamed polyurethane is porous, with numerous tiny depressions or holes on its surface.

A polishing liquid supply nozzle 354 is installed above the polishing table 350, and this polishing liquid supply nozzle 354 supplies polishing liquid onto the polishing pad 352 on the polishing table 350. The polishing table 350 and table shaft 351 are also provided with a passage 353 for supplying polishing liquid. The passage 353 is connected to an opening 355 on the surface of the polishing table 350. A through-hole 357 is formed in the polishing pad 352 at a position corresponding to the opening 355 in the polishing table 350. The polishing liquid passing through the passage 353 is supplied to the surface of the polishing pad 352 through the opening 355 in the polishing table 350 and the through-hole 357 in the polishing pad 352. The polishing liquid is a slurry composed of abrasive grains, a dispersant for separating the abrasive grains, and one or more chemical components such as a specified chemical or oxidizing agent, in a predetermined ratio depending on the type of object to be polished, particularly the type of deposited film to be polished on the substrate WF. Here, the abrasive grains can be selected to have an appropriate material, particle size, and particle size distribution. The chemical liquid may be an acid, alkali, surfactant, or the like. The opening 355 in the polishing table 350 and the through-hole 357 in the polishing pad 352 may be one or more. The positions of the opening 355 in the polishing table 350 and the through-hole 357 in the polishing pad 352 are arbitrary, and they may be located near the center of the polishing table 350, for example.

As shown in the example of FIG. 1, the polishing module 400 may include an atomizer 358 for spraying a liquid or a mixture of liquid and gas toward the polishing pad 352. The liquid sprayed from the atomizer 358 may be, for example, pure water, and the gas may be, for example, nitrogen gas.

The top ring 302 is connected to the top ring shaft 18, which is movable up and down relative to the swing arm 360 by a vertical movement mechanism 319. The vertical movement of the top ring shaft 18 moves the entire top ring 302 up and down relative to the swing arm 360, thereby positioning it. The top ring shaft 18 is rotated by a top ring rotation motor (not shown). The rotation of the top ring shaft 18 causes the top ring 302 to rotate around the top ring shaft 18. A rotary joint 323 is attached to the upper end of the top ring shaft 18.

The top ring 302 is adapted to hold a rectangular substrate WF on its underside. The swing arm 360 is rotatable about a support shaft 362. The swing arm 360 rotates to move the top ring 302 between the substrate transfer position of the second transport unit 200B and above the polishing table 350. By lowering the top ring shaft 18, the top ring 302 can be lowered to press the substrate against the surface (polishing surface 352a) of the polishing pad 352. At this time, the top ring 302 and the polishing table 350 are rotated, and a polishing liquid is supplied onto the polishing pad 352 from a polishing liquid supply nozzle 354 provided above the polishing table 350 and/or from an opening 355 provided in the polishing table 350. In this manner, the substrate WF is pressed against the polishing surface 352a of the polishing pad 352, thereby polishing the processing surface PS of the substrate WF. During polishing of the substrate WF, the swing arm 360 may be fixed or swingable so that the top ring 302 passes through the center of the polishing pad 352 (so as to cover the through-hole 357 of the polishing pad 352).

The up-and-down movement mechanism 319, which moves the top ring shaft 18 and top ring 302 up and down, includes a bridge 28 that rotatably supports the top ring shaft 18 via a bearing 321, a ball screw 32 attached to the bridge 28, a support base 29 supported by a support column 130, and an AC servo motor 38 mounted on the support base 29. The support base 29 that supports the servo motor 38 is fixed to the swing arm 360 via the support column 130.

The ball screw 32 includes a screw shaft 32a connected to the servo motor 38 and a nut 32b onto which the screw shaft 32a is threaded. The top ring shaft 18 moves up and down together with the bridge 28. Therefore, when the servo motor 38 is driven, the bridge 28 moves up and down via the ball screw 32, which in turn moves the top ring shaft 18 and the top ring 302 up and down. The polishing module 400 includes a distance sensor 70 as a position detector that detects the distance to the underside of the bridge 28, i.e., the position of the bridge 28. By detecting the position of the bridge 28 using this distance sensor 70, the position of the top ring 302 can be detected. The distance sensor 70, together with the ball screw 32 and servo motor 38, constitutes a vertical movement mechanism 319. The distance sensor 70 may be a laser sensor, ultrasonic sensor, eddy current sensor, or linear scale sensor. The distance sensor 70, servo motor 38, and other devices within the polishing module are controlled by a control device 900.

In the illustrated example, the polishing module 400 includes a dressing unit 356 that dresses the polishing surface 352a of the polishing pad 352. This dressing unit 356 includes a dresser 50 that slides against the polishing surface 352a, a dresser shaft 51 to which the dresser 50 is connected, an air cylinder 53 attached to the upper end of the dresser shaft 51, and a swing arm 55 that rotatably supports the dresser shaft 51. The lower part of the dresser 50 is formed by a dressing member 50a, the underside of which has needle-shaped diamond particles attached. The air cylinder 53 is placed on a support base 57 supported by struts 56, and these struts 56 are fixed to the swing arm 55.

The swing arm 55 is driven by a motor (not shown) and is configured to rotate around a support shaft 58. The dresser shaft 51 is rotated by the motor (not shown), and this rotation of the dresser shaft 51 causes the dresser 50 to rotate around the dresser shaft 51. The air cylinder 53 moves the dresser 50 up and down via the dresser shaft 51, pressing the dresser 50 against the polishing surface 352a of the polishing pad 352 with a predetermined pressing force.

The polishing surface 352a of the polishing pad 352 is dressed as follows: The dresser 50 is pressed against the polishing surface 352a by the air cylinder 53, and at the same time, pure water is supplied to the polishing surface 352a from a pure water supply nozzle (not shown). In this state, the dresser 50 rotates around the dresser shaft 51, causing the lower surface (diamond particles) of the dressing member 50a to slide against the polishing surface 352a. In this way, the dresser 50 scrapes off the polishing pad 352, and the polishing surface 352a is dressed.

In the substrate polishing apparatus 1000 of this embodiment, the dresser 50 is used to measure the wear amount of the polishing pad 352. Specifically, the dressing unit 356 is equipped with a displacement sensor 60 that measures the displacement of the dresser 50. This displacement sensor 60 constitutes a wear amount detection means for detecting the wear amount of the polishing pad 352 and is provided on the upper surface of the swing arm 55. A target plate 61 is fixed to the dresser shaft 51, and moves up and down as the dresser 50 moves up and down. The displacement sensor 60 is positioned to pass through the target plate 61 and measures the displacement of the dresser 50 by measuring the displacement of the target plate 61. Note that any type of sensor can be used as the displacement sensor 60, such as a linear scale, laser sensor, ultrasonic sensor, or eddy current sensor.

The wear amount of the polishing pad 352 is measured as follows. First, the air cylinder 53 is driven to bring the dresser 50 into contact with the polishing surface 352a of the polishing pad 352, which has already been initially dressed. In this state, the displacement sensor 60 detects the initial position (initial height value) of the dresser 50, and this initial position (initial height value) is stored in the control device 900. Then, after polishing of one or more substrates is completed, the dresser 50 is again brought into contact with the polishing surface 352a, and the position of the dresser 50 is measured in this state. Because the position of the dresser 50 displaces downward depending on the wear amount of the polishing pad 352, the control device 900 can determine the wear amount of the polishing pad 352 by calculating the difference between the initial position and the position of the dresser 50 after polishing. In this way, the wear amount of the polishing pad 352 is determined based on the position of the dresser 50.

Figure 11 is a schematic cross-sectional view (cross-section 9-9 in Figure 10) of the top ring 302. The top ring 302 has a top ring body 2 that presses the substrate WF against the polishing surface 352a, and a retainer member 3 that directly presses the polishing surface 352a. The top ring body 2 is made of a roughly rectangular, flat plate, and the retainer member 3 is attached to the outer periphery of the top ring body 2. The retainer member 3 can be a plate-shaped member. The top ring body 2 is made of a resin such as engineering plastic (e.g., PEEK). An elastic membrane 4 that contacts the backside of the substrate is attached to the underside of the top ring body 2. The elastic membrane 4 can be made of a rubber material with excellent strength and durability, such as ethylene propylene rubber (EPDM), polyurethane rubber, or silicone rubber. The elastic membrane 4 can be formed from the rubber material using a mold.

A gas introduction chamber 6 is formed between the top ring body 2 and the elastic membrane 4. A flow path 12 is connected to the gas introduction chamber 6. The flow path 12 is connected to a pressure adjustment unit via a valve and pressure regulator (not shown). The pressure adjustment unit is configured to adjust the pressure inside the gas introduction chamber 6. The flow path 12 is also connected to a vacuum source via a valve (not shown) and can communicate with the atmosphere via another valve (not shown). The top ring 302 may include multiple gas introduction chambers 6, and different portions of the substrate WF may be polished at different pressures. The lower surface of the elastic membrane 4, on which the substrate WF is placed, is formed with vacuum suction holes (not shown) that are connected to a vacuum source (not shown) so that air can move through them, and the substrate WF is vacuum-sucked.

In the top ring 302, the substrate WF is attracted and held by the elastic film 4, thereby correcting any warping of the substrate WF and enabling front-surface-referenced polishing based on the front surface (processing surface PS) of the substrate WF. The top ring 302 may be, for example, the top ring described in the aforementioned Japanese Patent Application Laid-Open No. 2020-19115. The top ring 302 may also be equipped with a rigid suction plate, and polishing may be performed by vacuum-attracting the substrate WF to this suction plate. In this case, the top ring 302 holds the back surface of the substrate WF flat, enabling back-surface-referenced polishing based on the back surface of the substrate WF.

<Drying module>
1 , the drying module 500 is an apparatus for drying the substrate WF. In the illustrated substrate polishing apparatus 1000, the drying module 500 dries the substrate WF that has been polished in the polishing module 400 and then cleaned in the cleaning section of the second transfer unit 200B. The drying module 500 is disposed downstream of the second transfer unit 200B.

The drying module 500 is equipped with a nozzle 530 for spraying gas toward the substrate WF. This gas can be compressed air or nitrogen. In the drying module 500, the substrate WF is transported by transport rollers 202 attached to roller shafts 204. During this transport, gas is sprayed from the nozzle 530 toward the substrate WF to dry the substrate WF. The substrate WF unloaded from the drying module 500 is loaded into the unload unit 600. Note that the configuration of the drying module 500 is not particularly limited as long as it can dry the substrate WF to the desired degree.

<Unload unit>
The unload unit 600 is a unit for unloading the substrate WF after processing such as polishing and cleaning to the outside of the substrate polishing apparatus 1000. In the unload unit 600, the substrate WF is transported by transport rollers 202 attached to roller shafts 204. The unload unit 600 may be configured to include a sensor (not shown) and to unload the substrate WF to the outside of the substrate polishing apparatus 1000 when the sensor detects the substrate WF. Note that the form of the unload unit 600 is not particularly limited as long as it can unload the substrate WF to the outside of the substrate polishing apparatus 1000.

<Control device>
12 is a conceptual diagram schematically illustrating the configuration of the control device 900. The control device 900 includes a communication unit 910, an input unit 920, a storage unit 930, a display unit 940, and a processing unit 950. The processing unit 950 includes a transport control unit 951, a measurement control unit 952, a first grinding control unit 953, a second grinding control unit 954, a polishing control unit 955, a display control unit 956, and a memory 959.

The control device 900 is equipped with an information processing device such as a general-purpose computer or a dedicated computer, and serves as an interface with the user as appropriate, as well as performing processes such as communication, storage, and calculation of various data. Note that each part of the control device 900 may be located in a physically different device. Furthermore, at least a portion of the data processed by the control device 900 may be stored on a remote server, etc.

The communication unit 910 includes a communication device capable of communicating with at least the measurement device 750 via a wireless or wired connection. The communication unit 910 functions as a data acquisition unit that acquires shape data from the measurement device 750.

The input unit 920 includes input devices such as a mouse, keyboard, various buttons, or a touch panel. The input unit 920 accepts inputs from the user necessary for the operation of the substrate polishing apparatus 1000.

The storage unit 930 includes a non-volatile or volatile storage medium. The storage unit 930 stores shape data, first target data and second target data (described below), and programs for the processing unit 950 to execute processing.

The display unit 940 includes a display device such as a liquid crystal monitor.
The information obtained by the above processing is displayed.

The processing unit 950 is equipped with a processing device including a processor such as a CPU. The processing unit 950 functions as the main body of operations that controls the substrate polishing apparatus 1000. The processing unit 950 performs various processes by loading programs stored in the storage unit 930 or the like into the memory 959 and executing them. These programs include the processes performed by the processing unit 950 described below. These programs may be obtained by recording them on a recording medium such as a DVD-ROM, or may be obtained via a network. Note that there are no particular limitations on the physical configuration of the processing unit 950, as long as the processing by the processing unit 950 is possible.

The transport control unit 951 controls the load unit 100 and unload unit 600 to load and unload substrates WF into and from the substrate polishing apparatus 1000. It also controls the first transport unit 200A and second transport unit 200B, etc., to control the transport of substrates WF. The transport control unit 951 controls the first transport unit 200A to move the substrate WF to the grinding module 300, and to move the substrate WF after the first and second grinding processes to the inverter 800. The transport control unit 951 controls the inverter 800 to invert the substrate WF. The transport control unit 951 controls the second transport unit 200B to move the substrate WF inverted by the inverter to the transfer position of the top ring 302, and to move the substrate WF polished in the polishing module 400 to the drying module 500.

The measurement control unit 952 controls the measuring device 750 to measure the shape of the processing surface PS. The measurement control unit 952 sends a signal to the measuring device 750 to start shape measurement based on input from a user of the substrate polishing apparatus 1000 (hereinafter simply referred to as the user) or predetermined conditions. The measurement control unit 952 controls the measuring device 750 to perform shape measurement, for example, once the substrate WF is placed on the table 73 and before the first grinding is performed.

The measurement control unit 952 can perform shape measurements before and after each of the first grinding, second grinding, and polishing, or while the first grinding or second grinding is being performed. The measurement control unit 952 can, for example, perform shape measurements before and after each or all of these processes, and determine whether the processing surface PS has been processed into the desired shape. The results of the shape measurements or the results of this determination can be displayed on the display unit 940. For ease of understanding, the display on the display unit 940 can vary at least one of the hue, saturation, and brightness based on the height from the reference surface of the substrate WF. In this case, the hue, saturation, or brightness can be changed continuously or in stages based on an appropriate threshold value.

The first grinding control unit 953 controls the grinding module 300 to perform the first grinding. Hereinafter, data indicating the target shape for the first grinding will be referred to as first target data. Shape measurement performed before the first grinding or while the first grinding is being performed continuously or intermittently will be referred to as the first measurement. Furthermore, shape data obtained from the first measurement will be referred to as the first shape data.

The first grinding control unit 953 sets the range of the processing surface PS where the first grinding is performed based on the first measurement. From the first shape data and the first target data, the first grinding control unit 953 derives a portion of the processing surface PS where a relatively large amount of grinding is required to achieve the target shape of the processing surface PS in the first grinding. Hereinafter, this portion of the processing surface PS will be referred to as the first portion. The first portion is, for example, the convex portions WF1 and WF2 in FIG. 8 . For example, the first shape data and the first target data describe the height of the processing surface PS from each position on the reference surface in three-dimensional coordinates. The first grinding control unit 953 can calculate the required amount of grinding based on the difference between the height in the first shape data and the height in the first target data at each position on the reference surface. The first grinding control unit 953 can include points where this difference is greater than a predetermined threshold in the first portion. The first grinding control unit 953 sets the range of the processing surface PS where the first grinding is performed so as to include the first portion. The first grinding control unit 953 controls the grinding module 300 so that the range is ground, and performs the first grinding. For example, the first grinding control unit 953 controls the first arm 71 and the table driving mechanism 730 so that the first grinding member G1 passes through the range when the first arm 71 swings. Note that, as long as the portion to be subjected to the first grinding can be set, the algorithm and the format of the data to be used are not particularly limited.

The second grinding control unit 954 controls the grinding module 300 to perform the second grinding. From the perspective of efficiently processing the portions not ground in the first grinding, it is preferable, but not limited to, that the second grinding control unit 954 control the grinding module 300 to perform full grinding of the processing surface PS. Hereinafter, data indicating the target shape for the second grinding will be referred to as second target data. Shape measurement performed while the second grinding is being performed continuously or intermittently will be referred to as second measurement. Furthermore, shape data obtained in the second measurement will be referred to as second shape data.

The second grinding control unit 954 functions as a judgment unit that judges whether to terminate the second grinding based on the second measurement. The second grinding control unit 954 calculates the similarity between the shape of the processing surface PS and the target shape for the second grinding from the second shape data and the second target data. The second grinding control unit 954 judges to terminate the second grinding if the similarity is equal to or less than a predetermined threshold, and judges not to terminate the second grinding otherwise. The method of calculating the similarity is not particularly limited. For example, the second shape data and second target data describe the height of the processing surface PS from each position on the reference surface in three-dimensional coordinates. The second grinding control unit 954 can calculate the similarity from the minimum difference between the height in the second shape data and the height in the second target data at each position on the reference surface. Note that the algorithm and the format of the data used are not particularly limited as long as it is possible to judge whether to terminate the second grinding in accordance with the criteria required for the substrate WF.

The polishing control unit 955 controls the polishing module 400 to perform polishing. It is preferable that the polishing control unit 955 polishes the entire surface of the substrate WF.

The display control unit 956 controls the display unit 940 to display information about the substrate polishing apparatus 1000 on the display device. The display control unit 956 can display information such as the progress of polishing by the substrate polishing apparatus 1000 or the results of shape measurement.

Figure 13 is a flowchart showing the flow of the substrate polishing method according to this embodiment. This substrate polishing method is performed by the control device 900. The transport control unit 951 controls the load unit 100 to load the substrate WF into the substrate polishing apparatus 1000, and controls the first transport unit 200A to place the substrate WF on the table 73 of the grinding module 300, after which step S101 is performed.

In step S101, the measurement control unit 952 controls the measuring device 750 to perform shape measurement (first measurement). After step S101, step S102 is performed. In step S102, the first grinding control unit 953 sets the range of the processing surface PS on which the first grinding is performed. The first grinding control unit 953 performs this setting based on the first shape data obtained in step S101. After step S102, step S103 is performed.

In step S103, the first grinding control unit 953 controls the grinding module 300 to perform the first grinding. After step S103, step S104 is performed. In step S104, the second grinding control unit 954 controls the grinding module 300 to perform the second grinding. After step S104, step S105 is performed.

In step S105, the measurement control unit 952 controls the measuring device 750 to perform shape measurement (second measurement). The shape measurement in step S105 may be performed after stopping the second grinding in step S104, or may be performed simultaneously with the second grinding in step S104. After step S105, step S106 is performed. In step S106, the second grinding control unit 954 determines whether or not to perform further second grinding. If further second grinding is to be performed, an affirmative judgment is made in step S106, and the process returns to step S104. If second grinding is not to be performed, a negative judgment is made in step S106, and step S107 is performed.

In step S107, the transport control unit 951 controls the inverter 800 to invert the substrate WF. After step S107, step S108 is performed. In step S108, the polishing control unit 955 controls the polishing module 400 to perform polishing. After polishing, the substrate WF is cleaned and dried as appropriate, and the transport control unit 951 transports the substrate WF outside the substrate polishing apparatus 1000. After step S108, the process ends.

The substrate polishing method according to this embodiment comprises performing a first grinding on a portion of the processing surface PS using a first grinding member G1, performing a second grinding on the processing surface PS using a second grinding member G2 having a larger maximum diameter than the first grinding member G1, and polishing the processing surface PS that has been subjected to the first and second grinding using a polishing member PM. By performing the localized first grinding and the second grinding over a wider area than the first grinding, the processing surface PS can be polished quickly and in a shorter time while suppressing variations in substrate thickness, and a highly accurate processing surface PS can then be formed by polishing. Therefore, a highly accurate substrate WF can be provided through efficient processing.

In the substrate polishing apparatus 1000 according to this embodiment, the second grinding control unit 954 performs the second grinding after the first grinding. This allows the convex portions to be removed by the localized first grinding, followed by the second grinding over a wider area, thereby creating polishing conditions that enable efficient grinding over a wide area of the processing surface PS while also enabling highly accurate polishing.

The substrate polishing apparatus 1000 according to this embodiment is equipped with a measuring device 750 that measures the shape of the processing surface PS. This allows processing to be performed using information on the shape of the processing surface PS, making it possible to provide a substrate WF with high accuracy through more reliable and efficient processing.

In the substrate polishing apparatus 1000 according to this embodiment, the measurement control unit 952 performs a first measurement of the shape of the processing surface PS before the first grinding. This allows for more efficient processing by appropriately setting the area to be subjected to the first grinding in advance.

In the substrate polishing apparatus 1000 according to this embodiment, the first grinding control unit 953 sets the portion of the processing surface PS where the first grinding will be performed based on the first measurement. This allows the target to be locally ground to be appropriately set, enabling the provision of substrates WF with greater efficiency and precision.

In the substrate polishing apparatus 1000 according to this embodiment, the measurement control unit 952 performs a second measurement of the shape of the processing surface PS during the second grinding, and the second grinding control unit 954 determines whether to terminate the second grinding based on the second measurement. This allows the second grinding to be performed while confirming that the polishing conditions are met, enabling more efficient and more accurate substrates to be provided.

In the substrate polishing apparatus 1000 according to this embodiment, the second grinding control unit 954 determines whether or not to perform second grinding based on second shape data indicating the shape of the processing surface PS obtained in the second measurement and second target data indicating the target shape for the second grinding. This allows for a more accurate determination of whether or not to perform second grinding.

In the substrate polishing apparatus 1000 according to this embodiment, the entire processing surface PS is ground in the second grinding. By performing full grinding after partial grinding, it is possible to efficiently grind the entire processing surface PS while creating polishing conditions that enable highly accurate polishing.

In the substrate polishing apparatus 1000 according to this embodiment, the maximum diameter L2 of the second grinding member G2 is smaller than the maximum diameter L3 of the processing surface PS. This allows the grinding module 300 to be configured compactly.

In the substrate polishing apparatus 1000 according to this embodiment, the first grinding member G1 and the second grinding member G2 are the same type of grinding member. This prevents the structure of the grinding module 300 from becoming too complicated and enables efficient processing by eliminating the need for transportation.

In the substrate polishing apparatus 1000 according to this embodiment, the first grinding member G1 and the second grinding member G2 are polishing tapes. This allows for precise partial grinding and allows the grinding module 300 to be configured more compactly.

The following modifications are also within the scope of the present invention and can be combined with the above-described embodiment or other modifications. In the following modifications, parts and the like that have the same structure and function as the above-described embodiment will be referred to by the same reference numerals, and descriptions will be omitted where appropriate.

(Variation 1-1)
In the above-described embodiment, the first measurement may be performed while the first grinding is being performed continuously or intermittently. The measurement control unit 952 controls the measuring device 750 to measure the shape of the treatment surface PS while the first grinding is being performed. This makes it possible to perform the first grinding more efficiently and the second grinding under better conditions based on the information obtained from the shape measurement.

The first grinding control unit 953 functions as a determination unit that determines whether to terminate the first grinding based on the first measurement. The first grinding control unit 953 calculates the similarity between the shape of the processing surface PS and the target shape for the first grinding from the first shape data and the first target data. The first grinding control unit 953 determines to terminate the first grinding if the similarity is equal to or less than a predetermined threshold, and determines not to terminate the first grinding otherwise. The method for calculating the similarity is not particularly limited. For example, as described above, the first shape data and the first target data may describe the height of the processing surface PS from each position on the reference plane using three-dimensional coordinates. The first grinding control unit 953 can calculate the similarity using the minimum difference between the height in the first shape data and the height in the first target data for the portion of the processing surface PS that is the target of the first grinding. Note that the algorithm and the format of the data used are not particularly limited, as long as it is possible to determine whether to terminate the first grinding in accordance with the criteria required for the substrate WF.

In this modified substrate polishing apparatus 1000, the first grinding control unit 953 determines whether to perform the first grinding based on the first shape data indicating the shape of the processing surface PS obtained in the first measurement and the first target data indicating the target shape for the first grinding. This allows for a more accurate determination of whether to perform the first grinding.

Figure 14 is a flowchart showing the flow of a substrate polishing method according to this modified example. This substrate polishing method is performed by the control device 900. Steps S201 to S203 are similar to steps S101 to S103 in the flowchart of Figure 13, so a description thereof will be omitted. After step S203, step S204 is performed.

In step S204, the measurement control unit 952 controls the measuring device 750 to perform shape measurement (first measurement). The shape measurement in step S204 may be performed by stopping the first grinding in step S203, or may be performed simultaneously with the first grinding in step S203. After step S204, step S205 is performed. In step S205, the first grinding control unit 953 determines whether or not to perform further first grinding. If further first grinding is to be performed, a positive judgment is made in step S205 and the process returns to step S203. If first grinding is not to be performed, a negative judgment is made in step S205 and step S206 is performed.

Steps S206 to S210 are similar to steps S104 to S108 in the flowchart of Figure 13, so a detailed explanation will be omitted. After step S210, the process ends.

(Variation 1-2)
In the above-described embodiment, the control device 900 may perform the first grinding and the second grinding simultaneously or alternately. When the first grinding and the second grinding are performed simultaneously, the first grinding control unit 953 and the second grinding control unit 954 control the first arm 71 or the first head 710 and the second arm 72 or the second head 720 so that they do not come into contact with each other.

After controlling the measuring device 750 to perform shape measurement, the measurement control unit 952 can set whether to perform first or second grinding. The measurement control unit 952 can perform this setting based on shape data indicating the shape of the processing surface obtained by shape measurement and target data indicating the target shape of the processing surface PS achieved by grinding or polishing. The shape data and target data can describe the height of the processing surface PS from each position on the reference plane using three-dimensional coordinates. For example, the measurement control unit 952 can determine convex portions based on the difference in height of the processing surface PS between the shape data and the target data. If the area of the convex portion is equal to or greater than a predetermined threshold, the second grinding can be performed; if it is less than the threshold, the first grinding can be performed. In this way, the control device 900 can perform either the first or second grinding based on the first measurement, thereby enabling the most efficient method of grinding, either the first or second grinding, depending on the shape of the processing surface PS, thereby providing a more efficiently polished substrate WF.

The measurement control unit 952 can also set whether or not to perform the first grinding and the second grinding simultaneously. For example, if the shape data indicates that the portion requiring the first grinding is in the center of the substrate WF, the measurement control unit 952 can set the first grinding and the second grinding not to be performed simultaneously, since doing so would likely result in contact. In this way, from the perspective of performing grinding efficiently, the measurement control unit 952 can set whether or not to perform the first grinding and the second grinding simultaneously, based on the shape measurement.

Figure 15 is a flowchart showing the substrate polishing method of this modified example. This substrate polishing method is performed by the control device 900. Steps S301 and S302 are similar to steps S101 and S102, respectively, in the flowchart of Figure 13, and therefore will not be described here. After step S302, step S303 is performed.

In step S303, the first grinding control unit 953 and the second grinding control unit 954 perform first grinding and second grinding. The first grinding and second grinding can be performed in any order, any number of times, or simultaneously. After step S303, step S304 is performed. In step S304, the measurement control unit 952 controls the measuring device 750 to measure the shape of the processing surface PS. The measurement control unit 952 can perform shape measurement at any timing. After step S304, step S305 is performed.

In step S305, the measurement control unit 952 determines whether to further perform the first grinding and the second grinding. If the first grinding and the second grinding are to be performed, an affirmative determination is made in step S305, and the process returns to step S303. If the first grinding and the second grinding are not to be performed, a negative determination is made in step S305, and step S306 is performed. Note that, if grinding is to be performed again, the measurement control unit 952 may set whether the first grinding or the second grinding will be performed, or whether both will be performed simultaneously. At least one of the first grinding and the second grinding may be performed based on this setting.

Steps S306 and S307 are similar to steps S107 and S108, respectively, and therefore will not be described further. After step S307, processing ends.

(Variation 1-3)
In the above-described embodiment, the thickness at each position of the processing surface PS may be measured by a measuring device, and the shape of the processing surface PS may be expressed by the thickness, or the shape of the processing surface PS may be analyzed based on the thickness.

Figure 16 is a conceptual diagram illustrating a measuring device 751 according to this modified example. The measuring device 751 includes a plurality of first detection heads 751A and a second detection head 751B. The first detection heads 751A and the second detection heads 751B are mounted on a third arm 75 extending in the radial direction of rotation of the rotation axis Ax1 of the table 73. The multiple first detection heads 751A are arranged side by side in the radial direction, and each first detection head 751A is configured to be able to perform detection at any position on the circumference as the table 73 rotates.

The first detection head 751A irradiates light onto the processing surface PS at a detection position corresponding to the first detection head 751 (arrow Ar111) and receives the light reflected from the processing surface PS (arrow Ar112). The second detection head 751B irradiates light onto the table 73 (arrow Ar121) and receives the light reflected from the table 73 (arrow Ar122). The measuring device 751 or the measurement control unit 952 calculates the plate thickness at each detection position by analyzing the data obtained by the light reception of the first detection head 751A and the data obtained by the light reception of the second detection head 751B. For example, the first detection head 751A and the second detection head 751B may be laser displacement sensors, and the plate thickness at each detection position may be calculated by subtracting the distance between each first detection head 751A and each detection position from the distance between the second detection head 751B and the table 73. Alternatively, the first detection head 751A and the second detection head 751B may be a CCD (Charge Coupled Device) image sensor or a CMOS (Complementary Metal-Oxide-Semiconductor) image sensor, and distance measurement may be performed using imaging.

In the substrate polishing apparatus 1000 of this modified example, the measuring device 751 irradiates the processing surface PS with light, and the measuring device 751 or the measurement control unit 952 receives light from the substrate WF based on the irradiated light and analyzes the measurement data obtained, thereby calculating the thickness distribution of the substrate WF. This allows the shape of the processing surface PS to be accurately measured based on the plate thickness.

(Variation 1-4)
In the above-described embodiment, the polishing tapes T1A and T1B are fed by two tape feed mechanisms in the first head 710. However, one polishing tape may be fed by one tape feed mechanism to supply the polishing tape to multiple locations on the pad surface.

Figure 17A is a side view schematically showing the first head 710A of this modified example, and Figure 17B is a bottom view schematically showing the arrangement of the polishing tape T1C on the first pad surface 712S of the first head 710A. The first head 710A includes first pressing mechanisms 711A and 711B, and first pressing pads 712A and 712B pressed by the first pressing mechanisms 711A and 711B, respectively. On the first pressing pads 712A and 712B, the polishing tape T1C is arranged to slide along the first pad surface 712S (arrow Ar17). The polishing tape T1C is the first grinding member G1 that comes into contact with and grinds the processing surface during the first grinding.

The polishing tape T1C is fed by the first tape feeding mechanism 7300 and slides over the first pressure pads 712A and 712B. The first tape feeding mechanism 7300 includes a supply reel 7310A, support rods 7320A, 7330A, 7340A, 7350A, 7350B, 7340B, 7330B, and 7320B, and a take-up reel 7310B. The supply reel 7310A and the take-up reel 7310B are cylindrical, and the polishing tape T1C is wound around the cylindrical surface. The supply reel 7310A and the take-up reel 7310B rotate around their cylindrical axes, allowing the polishing tape T1C to be unwound and wound, respectively. Support rods 7320A, 7330A, 7340A, 7350A, 7350B, 7340B, 7330B, and 7320B are fixed to the first head 710A or the first arm 71, support the polishing tape T1C, and define the movement path of the polishing tape T1C.

In this modified example, support rods 7350A and 7350B are arranged perpendicular to the first pad surface 712S and away from the substrate WF from the first pad surface 712S. As a result, the polishing tape T1C slides across the first pad surface 712S facing the first pressing pad 712A, temporarily separates from the first pad surface 712S, and then slides across the first pad surface 712S facing the first pressing pad 712B. As shown in FIG. 17B, gaps C3 are formed between the first pressing mechanism 711A and the first pressing mechanism 711B, and between the first pressing pad 712A and the first pressing pad 712B. In this modified example, the polishing tape T1C passes through gap C3.

The tape feed mechanism 7300 of this modified example allows the polishing tape to be positioned at multiple desired positions on the first pad surface 712S without the need to increase the number of tape feed mechanisms. This allows for more flexible adjustment of the polishing pattern. The tape feed mechanism of this modified example may also be applied to the second head.

Second Embodiment A substrate polishing apparatus 1001 of the second embodiment differs from the substrate polishing apparatus 1000 of the first embodiment in that a grinding module 300A is provided instead of the grinding module 300 of the first embodiment. The substrate polishing apparatus 1001 does not require a reversing machine.

Figure 18 is a conceptual diagram showing the configuration of a substrate polishing apparatus 1001 according to the second embodiment. The substrate polishing apparatus 1001 includes a load unit 100, two second transport units 200B, a grinding module 300A, a polishing module 400, a drying module 500, an unload unit 600, and a control device 901. The load unit 100, second transport unit 200B, polishing module 400, drying module 500, and unload unit 600 are the same as those in the above-described embodiments, and therefore will not be described here.

Figure 19 is a conceptual diagram showing a schematic configuration of the grinding module 300A. The grinding module 300A comprises a top ring 1302 and a table 1073. The table 1073 is driven by a table drive mechanism (not shown) and is configured to be rotatable around a rotation axis Ax3. A polishing tape T3, which serves as a grinding member, is placed on the upper surface of the table 1073. The polishing tape T3 is movable by a tape feed mechanism (not shown). The top ring 1302 comprises a retainer member 1003 and a rigid suction plate 1005. The lower surface of the suction plate 1005 has a vacuum suction hole (not shown) that communicates with a flow path 1012 connected to a vacuum source (not shown) so that air can be moved, allowing the substrate WF to be vacuum-sucked. The top ring 1302 is rotatable around a rotation axis Ax4, which is its central axis. The top ring 1302 performs face-down grinding, with the processing surface PS of the substrate WF facing vertically downward.

The material of the polishing tape used as the grinding member is not particularly limited. From the perspective of achieving faster and more efficient processing than polishing by the polishing module 400, or from the perspective of performing rough grinding at high speed, it is preferable that the grinding member of the polishing module 300A contain a material with higher rigidity or elasticity than the polishing member of the polishing module 400. For example, this grinding member may be a polishing tape in which abrasive grains made of the above material are disposed on a base member. In this case, a resin coating may be applied to the surface of the abrasive grains to prevent them from falling off, or the abrasive grains themselves may be attached to the base member by electrodeposition. Examples of materials for the base member include polyimide, rubber, PET, resin materials, composite materials in which these materials are impregnated with fibers, and at least one or a combination of metal foils. Instead of a polishing tape, a fixed abrasive grain may be used as the grinding member. In this case, a fixed abrasive grain surface plate may be installed in the grinding module 300A instead of the table 1073.

The control device 901 can be a general-purpose computer or a dedicated computer equipped with input/output devices, an arithmetic unit, a storage device, etc. The control device 901 controls the operation of each part of the substrate polishing apparatus 1001. The control device 901 controls the grinding module 300A to adsorb the substrate WF to the top ring 1302 in the upstream second transport unit 200B, and then move the top ring 1302 above the table 1073. The control device 901 controls the grinding module 300A to rotate the table 1073 and the top ring 1302, bringing the processing surface PS of the substrate WF adsorbed to the lower surface of the top ring 1302 into contact with the surface of the polishing tape T3, thereby grinding the substrate WF.

Figure 20 is a flowchart showing the flow of the substrate polishing method of this embodiment. Under the control of the control device 901, the substrate WF is loaded into the load unit 100 and transported to the substrate transfer position of the upstream second transport unit 200B. Then, in step S401, the control device 901 controls the grinding module 300A to perform grinding using a grinding member (polishing tape). After step S401, step S402 is performed. In step S402, the substrate WF is transported to the substrate transfer position of the downstream second transport unit, and then the control device 901 controls the polishing module 400 to polish the substrate WF. After polishing, the substrate WF is dried and cleaned as appropriate, and then transported out of the substrate polishing apparatus 1001. After step S402, the process ends. Note that in the polishing module 400, the substrate WF may be vacuum-attached to a rigid suction plate to perform backside reference polishing.

The following modifications are also within the scope of the present invention and can be combined with the above-described embodiment or other modifications. In the following modifications, parts and the like that have the same structure and function as the above-described embodiment will be referred to by the same reference numerals, and descriptions will be omitted where appropriate.

(Variation 2-1)
In the above-described embodiment, one top ring may be shared by the grinding module 300A and the polishing module 400.

Figure 21A is a conceptual diagram schematically illustrating a top ring 2302 according to this modified example when grinding is performed in the grinding module 300A. The top ring 2302 includes a top ring body 2002, a retainer member 2003, an elastic membrane 2004, and a rigid plate 2007. The underside of the elastic membrane 2004 has vacuum suction holes (not shown) that communicate with a vacuum source, enabling vacuum suction of the substrate WF. A gas introduction chamber 2006 is formed between the top ring body 2002 and the elastic membrane 2004, and communicates with a flow path 2012 connected to a pressure adjustment unit. When grinding is performed in the grinding module 300A, the pressure in the gas introduction chamber 2006 is controlled to a sufficiently low level so that the rigid plate 2007 presses against the elastic membrane 2004. Therefore, backside-reference polishing is possible due to the shape of the rigid plate 2007 that presses against the backside of the substrate WF. The top ring 2302 in this state will be referred to as 2302A where appropriate.

Figure 21B is a conceptual diagram that schematically illustrates the top ring 2302 according to this modified example when polishing is performed in the polishing module 400. In this case, gas is introduced into the gas introduction chamber 2006, and the gas pressure causes the rigid plate 2007 to not press sufficiently against the elastic membrane 2004. Therefore, the substrate WF is adsorbed and held by the elastic membrane 2004, correcting any warpage of the substrate WF and enabling surface-based polishing based on the surface (processing surface PS) of the substrate WF. The top ring 2302 in this state will be referred to as 2302B where appropriate.

In the substrate polishing apparatus 1001 and substrate polishing method of this modified example, the control device 901 performs backside-based grinding in the grinding module 300A and frontside-based polishing in the polishing module 400 without the need to detach the substrate WF from the top ring 2302. This allows for backside-based grinding, which reduces total thickness variation (TTV), to be followed by polishing using a surface-based method such as CMP. This makes it possible to provide highly accurate substrates WF while performing more efficient processing.

(Variation 2-2)
In the above-described modified example 2-1, grinding and polishing may be performed on one table.

Figure 22 is a perspective view showing a schematic diagram of a grinding/polishing module 3000 according to this modified example. The grinding/polishing module 3000 includes a table 3073, a table drive mechanism 3730, a fixed abrasive surface plate 3351 serving as a grinding member G, a polishing pad 3352 serving as a polishing member PM, and the above-described top ring 2302.

Figure 23 is a top view schematically showing the arrangement of the fixed abrasive surface plate 3351 and polishing pad 3352. The circular fixed abrasive surface plate 3351 is arranged on the table 3073, with the rotation axis Ax5 of the table 3073 at its center, and an annular polishing member 3352 is arranged around the grinding member 3351. Instead of the fixed abrasive surface plate 3351, a polishing tape may be used as the grinding member. An annular grinding member G may be arranged around the circular polishing member PM. Rectangle R10 indicates the position of the substrate WF during grinding, and rectangle R20 indicates the position of the substrate WF during polishing. The control device 901 moves the top ring 2302 along the table 3073 (arrow Ar5) to perform grinding with the fixed abrasive surface plate 3351 and polishing with the polishing pad 3352.

Figure 24A is a diagram showing grinding on a fixed abrasive surface plate 3351. The control device 901 sufficiently reduces the pressure in the gas introduction chamber 2006 (Figure 21A) of the top ring 2302 to create a state (top ring 2302A) where backside reference polishing is possible, and then brings the substrate WF held by suction on the top ring 2302 into contact with the fixed abrasive surface plate 3351 for grinding. During grinding, the top ring 2302 is oscillated as appropriate.

Figure 24B is a schematic diagram showing polishing on the polishing pad 3352. The control device 901 introduces gas into the gas introduction chamber 2006 of the top ring 2302 to create a state (top ring 2302B) where surface-reference polishing is possible, and then brings the substrate WF held by suction on the top ring 2302 into contact with the polishing pad 3352 for polishing. During polishing, the top ring 2302 is oscillated appropriately.

In the substrate polishing apparatus 1001 of this modified example, the control device 901 performs backside-based grinding using the grinding member G and frontside-based polishing using the polishing member PM without the need to detach the substrate WF from the top ring 2302 or move it from above the table 3073. This makes it possible to provide a compact substrate polishing apparatus that can perform backside-based grinding and then perform surface-based polishing such as CMP.

The present embodiment described above can also be described as the following embodiments. [Embodiment 1] According to embodiment 1, a substrate polishing apparatus is proposed that performs a polishing process on a processing surface of a substrate. The substrate polishing apparatus includes a grinding module in which a first grinding member and a second grinding member having a larger maximum diameter than the first grinding member are disposed, a polishing module including a polishing member, and a control device that controls the grinding module and the polishing module. The control device controls the grinding module to perform a first grinding on a portion of the processing surface with the first grinding member and a second grinding on the processing surface with the second grinding member, and controls the polishing module to polish the processing surface after the first grinding and the second grinding. According to embodiment 1, high-precision substrates can be provided through efficient processing.

[Mode 2] According to Mode 2, in Mode 1, the control device performs the second grinding simultaneously with or after the first grinding. According to Mode 2, by grinding convex portions by localized first grinding and then performing second grinding over a wider area, it is possible to create polishing conditions that enable efficient grinding over a wide area of the processing surface while also enabling precise polishing.

[Mode 3] According to Mode 3, the substrate polishing apparatus of Mode 1 or Mode 2 further includes a measuring device that measures the shape of the processing surface. According to Mode 3, by performing processing using information on the shape of the processing surface, it is possible to provide substrates with high precision through more reliable and efficient processing.

[Mode 4] According to Mode 4, in Mode 3, the measuring device performs a first measurement of the shape of the processing surface before the first grinding or while the first grinding is being performed. According to Mode 4, by appropriately setting the portion to be subjected to the first grinding, even more efficient processing can be achieved.

[Mode 5] According to Mode 5, in the first measurement of Mode 4, the measuring device irradiates the processing surface with light, receives light from the substrate based on the light, and based on the analysis of the measurement data obtained, at least one of the thickness distribution of the substrate and the thickness distribution of the film formed on the processing surface is obtained. According to Mode 5, information about the shape of the processing surface can be obtained efficiently in a non-contact manner, and the grinding process can be performed efficiently based on this information.

[Mode 6] According to Mode 6, in Modes 4 or 5, the control device sets the portion of the processing surface where the first grinding is performed based on the first measurement. According to Mode 6, the target to be locally ground can be appropriately set, making it possible to provide a substrate with greater efficiency and precision.

[Mode 7] According to Mode 7, in Modes 4 to 6, the control device determines whether to perform the first grinding based on first shape data indicating the shape of the treatment surface obtained by the first measurement and first target data indicating the target shape for the first grinding. According to Mode 7, it is possible to more accurately determine whether to perform the first grinding.

[Mode 8] According to Mode 8, in Modes 4 to 7, the control device determines whether to perform the first grinding or the second grinding based on the first measurement. According to Mode 8, the first grinding or the second grinding can be performed by an efficient method depending on the shape of the processing surface, thereby making it possible to provide a substrate that has been polished more efficiently.

[Mode 9] According to Mode 9, in Modes 3 to 8, the measuring device performs a second measurement of the shape of the processed surface during the second grinding, and the control device determines whether to terminate the second grinding based on the second measurement. According to Mode 9, the second grinding can be performed while checking whether the polishing conditions are met, making it possible to provide substrates with greater efficiency and higher precision.

[Mode 10] According to Mode 10, in Mode 9, the control device determines whether to terminate the second grinding based on second shape data indicating the shape of the processed surface obtained by the second measurement and second target data indicating the target shape for the second grinding. According to Mode 10, it is possible to more accurately determine whether to perform the second grinding.

[Mode 11] According to Mode 11, in Modes 1 to 10, the second grinding involves grinding the entire surface of the treatment surface. According to Mode 11, by performing full grinding after partial grinding, it is possible to create polishing conditions that enable efficient grinding of the entire treatment surface while also enabling highly accurate polishing.

[Mode 12] According to Mode 12, in Modes 1 to 11, the maximum diameter of the second grinding member is smaller than the maximum diameter of the processing surface. According to Mode 12, the grinding module can be configured compactly.

[Mode 13] According to Mode 13, in Modes 1 to 12, the first grinding member and the second grinding member are the same type of grinding member. According to Mode 13, the grinding module can be configured compactly, and the labor required for transportation can be eliminated, allowing for efficient processing.

[Mode 14] According to Mode 14, in Mode 13, the first grinding member and the second grinding member are abrasive tapes. According to Mode 14, partial grinding can be performed with high precision, and the grinding module can be configured more compactly.

[Mode 15] According to Mode 15, in Modes 1 to 14, the polishing member is a polishing pad, and the polishing is CMP polishing. According to Mode 15, highly accurate polishing can be performed.

[Mode 16] According to Mode 16, in any of Modes 1 to 15, the grinding module includes a substrate support portion that supports the substrate during the first grinding and the second grinding, and on which the substrate is positioned so that the processing surface faces vertically upward. According to Mode 16, partial grinding is easy to perform, and the grinding module can be configured compactly.

[Mode 17] According to Mode 17, in Modes 1 to 16, the substrate polishing apparatus further includes an inverting machine, and the control device controls the inverting machine to invert the substrate after the first grinding or the second grinding is completed and before the polishing. According to Mode 17, the substrate can be inverted efficiently.

[Mode 18] According to Mode 18, in Modes 1 to 17, the substrate is a rectangular substrate. Rectangular substrates may have significant warpage or thickness variations, requiring a large amount of grinding or polishing. Meanwhile, the demand for flatness for these rectangular substrates is also increasing. Therefore, rectangular substrates are highly necessary to provide highly accurate substrates through efficient processing, and are preferably applied to the present invention.

[Mode 19] According to Mode 19, a substrate polishing method is proposed for performing a polishing process on a processing surface of a substrate, comprising: performing a first grinding on a portion of the processing surface using a first grinding member; performing a second grinding on the processing surface using a second grinding member having a larger maximum diameter than the first grinding member; and polishing the processing surface that has been subjected to the first grinding and second grinding using a polishing member. According to Mode 19, a high-precision substrate can be provided through efficient processing.

Although several embodiments of the present invention have been described above, the above-described embodiments of the invention are intended to facilitate understanding of the present invention and are not intended to limit the present invention. The present invention may be modified or improved without departing from its spirit, and of course, the present invention includes equivalents. Furthermore, any combination or omission of the components described in the claims and specification is possible as long as they can solve at least some of the above-mentioned problems or achieve at least some of the effects.

2, 2002...top ring body 3, 1003, 2003...retainer member 4, 2004...elastic membrane 6, 2006...gas introducing chamber 12, 1012, 2012...flow path 71...first arm 72...second arm 73, 1073, 3073...table 75...third arm 100...loading unit 200A...first transport unit 200B...second transport unit 202...transport roller 204...roller shaft 220...stopper 230...pusher 300, 300A...grinding module 302, 1302, 2302, 2302A, 2302B...top ring 352a...polishing surface 400...polishing module 500...drying module 600...unloading unit 710...first head 712...first pressing pad 712S...first pad surface 720...second head 7 22...second pressure pad 722S...second pad surface 750, 751...measuring device 751A...first detection head 751B...second detection head 800...reversing machines 900, 901...control device 950...processing unit 951...transport control unit 952...measurement control unit 953...first grinding control unit 954...second grinding control unit 955...polishing control unit 959...memory 1000, 1001...substrate polishing apparatus 100 5...suction plate 2007...rigid plate 3000...grinding/polishing module Ax1, Ax3, Ax4, Ax5...rotating shaft G...grinding member G1...first grinding member G2...second grinding member L1...maximum diameter L2 of first grinding member...maximum diameter L3 of second grinding member...maximum diameter PM of processing surface...polishing member PS...processing surfaces T1A, T1B, T2A, T2B, T3...polishing tape WF...substrates WF1, WF2...protruding portion

Claims (19)

A substrate polishing apparatus for performing a polishing process on a processing surface of a substrate,
a grinding module in which a first grinding member and a second grinding member having a maximum diameter larger than that of the first grinding member are disposed;
a polishing module including a polishing member;
a control device for controlling the grinding module and the polishing module,
The control device
controlling the grinding module to perform a first grinding on a portion of the processing surface with the first grinding member and a second grinding on the processing surface with the second grinding member;
a substrate polishing apparatus that controls the polishing module to polish the processing surface that has been subjected to the first grinding and the second grinding; The substrate polishing apparatus of claim 1, wherein the control device performs the second grinding simultaneously with the first grinding or after the first grinding. The substrate polishing apparatus of claim 1 or 2 further comprises a measuring device that measures the shape of the processing surface. The substrate polishing apparatus of claim 3, wherein the measuring device performs a first measurement of the shape of the processing surface before or while the first grinding is being performed. The substrate polishing apparatus of claim 4, wherein in the first measurement, the measuring device irradiates the processing surface with light, receives light from the substrate based on the light, and analyzes the measurement data obtained to obtain at least one of the thickness distribution of the substrate and the thickness distribution of the film formed on the processing surface. The substrate polishing apparatus of claim 4 or 5, wherein the control device sets the portion of the processing surface on which the first grinding is performed based on the first measurement. A substrate polishing apparatus according to any one of claims 4 to 6, wherein the control device determines whether or not to perform the first grinding based on first shape data indicating the shape of the processing surface obtained by the first measurement and first target data indicating the target shape for the first grinding. A substrate polishing apparatus according to any one of claims 4 to 7, wherein the control device determines whether the first grinding or the second grinding is to be performed based on the first measurement. the measuring device performs a second measurement of the shape of the processed surface in the second grinding;
9. The substrate polishing apparatus according to claim 3, wherein the control device determines whether or not to terminate the second grinding based on the second measurement. The substrate polishing apparatus of claim 9, wherein the control device determines whether to terminate the second grinding based on second shape data indicating the shape of the processed surface obtained in the second measurement and second target data indicating the target shape for the second grinding. A substrate polishing apparatus according to any one of claims 1 to 10, wherein the entire processing surface is ground in the second grinding. 12. The substrate polishing apparatus according to claim 1, wherein the second grinding member has a maximum diameter smaller than the maximum diameter of the processing surface. A substrate polishing apparatus according to any one of claims 1 to 12, wherein the first grinding member and the second grinding member are the same type of grinding member. The substrate polishing apparatus of claim 13, wherein the first grinding member and the second grinding member are polishing tapes. A substrate polishing apparatus according to any one of claims 1 to 14, wherein the polishing member is a polishing pad and the polishing is CMP polishing. A substrate polishing apparatus according to any one of claims 1 to 15, wherein the grinding module includes a substrate support portion that supports the substrate during the first grinding and the second grinding, and on which the substrate is positioned so that the processing surface faces vertically upward. The substrate polishing apparatus further includes a reversing machine,
17. The substrate polishing apparatus according to claim 1, wherein the control device controls the inverting machine to invert the substrate after the first grinding or the second grinding is completed and before the polishing. A substrate polishing apparatus according to any one of claims 1 to 17, wherein the substrate is a rectangular substrate. A substrate polishing method for performing a polishing process on a processing surface of a substrate, comprising:
performing a first grinding on a portion of the processing surface by a first grinding member;
performing a second grinding on the processing surface using a second grinding member having a maximum diameter larger than that of the first grinding member;
and polishing the processing surface, which has been subjected to the first grinding and the second grinding, with a polishing member.