JP7788809B2 - SUBSTRATE PROCESSING APPARATUS AND METHOD FOR CONTROLLING PURGE GAS - Google Patents

Description

This disclosure relates to a substrate processing apparatus, a purge gas control method, and a vacuum transfer chamber cleaning method.

In substrate processing equipment, N2 gas, for example, is flowed as a purge gas in the vacuum transfer chamber that transfers substrates to the processing chamber where the substrates are processed to suppress particle generation. For example, one method is to supply purge gas from the side of the vacuum transfer chamber opposite the side connected to the load lock module, and exhaust the purge gas from the side connected to the load lock module. For example, when a substrate is unloaded while held in a reduced pressure atmosphere between the processing chamber and the vacuum transfer chamber, the purge gas purges the atmosphere inside the processing chamber that is brought out by opening the gate valve or moving the arm of the transfer mechanism. Particles inside the vacuum transfer chamber are exhausted from the exhaust port by the airflow of the purge gas.

In addition, to suppress the generation of particles inside the vacuum transfer chamber, it has been proposed to add an accessory module that cleans off films caused by residual gas adhering to the arms of the transfer mechanism (Patent Document 1). Furthermore, to remove particles that have accumulated inside the chamber, it has been proposed to provide an electrode on the substrate transfer section and apply a high voltage, which applies electrostatic stress to the interior surface of the chamber, thereby detaching the accumulated foreign matter and removing it with a gas flow (Patent Document 2).

JP 2009-164213 A Japanese Patent Application Laid-Open No. 2005-317783

This disclosure provides a substrate processing apparatus, a purge gas control method, and a vacuum transfer chamber cleaning method that can prevent particle accumulation by eliminating gas stagnation.

A substrate processing apparatus according to one aspect of the present disclosure includes a vacuum transfer chamber having a top surface, a bottom surface opposite the top surface, and side surfaces between the top surface and the bottom surface, the side surfaces being a first side surface and a second side surface opposite the first side surface; a transfer robot disposed within the vacuum transfer chamber for transferring substrates; a load lock module connected to the first side surface; a pipe connected to a purge gas supply source for supplying purge gas into the vacuum transfer chamber; at least one gas port provided on the top surface near the second side surface and connected to the pipe; and at least one exhaust port provided on the bottom surface near the first side surface of the vacuum transfer chamber and connected to an exhaust pump for exhausting the purge gas supplied to the vacuum transfer chamber.

According to the present disclosure, particle accumulation can be suppressed by eliminating gas stagnation.

FIG. 1 is a transverse cross-sectional view showing an example of a substrate processing apparatus according to a first embodiment of the present disclosure. FIG. 2 is a diagram showing an example of a piping system to a vacuum transfer chamber in the first embodiment. FIG. 3 is a diagram showing an example of a purge gas sequence in the first embodiment. FIG. 4 is a diagram showing an example of an experimental result in the first embodiment. FIG. 5 is a diagram showing an example of an experimental result in the first embodiment. FIG. 6 is a diagram showing an example of the experimental results in the reference example. FIG. 7 is a diagram showing an example of the experimental results in the reference example. FIG. 8 is a diagram showing an example of a piping system to a vacuum transfer chamber in the first modification. FIG. 9 is a diagram showing an example of a purge gas sequence in the first modification. FIG. 10 is a diagram showing an example of a piping system to a vacuum transfer chamber in the second modification. FIG. 11 is a diagram showing an example of a purge gas sequence in the second modification. FIG. 12 is a diagram showing an example of a piping system to a vacuum transfer chamber in the third modification. FIG. 13 is a diagram showing an example of a purge gas sequence in the third modification. FIG. 14 is a diagram showing an example of a valve opening/closing sequence in the second embodiment. FIG. 15 is a diagram showing an example of an experimental result in the second embodiment. FIG. 16 is a diagram showing an example of an experimental result in the second embodiment. FIG. 17 is a diagram showing an example of an experimental result in the second embodiment. FIG. 18 is a diagram showing an example of an experimental result in the second embodiment. FIG. 19 is a diagram showing an example of an experimental result in the second embodiment. FIG. 20 is a diagram showing an example of a valve opening/closing sequence in the fourth modification. FIG. 21 is a diagram showing an example of a valve opening/closing sequence in the fifth modification. FIG. 22 is a diagram showing an example of a valve opening/closing sequence in the sixth modification. FIG. 23 is a diagram showing an example of a valve opening/closing sequence in the seventh modification. FIG. 24 is a diagram showing an example of a valve opening/closing sequence in the eighth modification. FIG. 25 is a diagram showing an example of a valve opening/closing sequence in Modification 9. FIG. 26 is a diagram showing an example of a valve opening/closing sequence in the tenth modification. FIG. 27 is a diagram showing an example of a valve opening/closing sequence in the eleventh modification. FIG. 28 is a diagram showing an example of a valve opening/closing sequence in the twelfth modification. FIG. 29 is a diagram showing an example of a piping system to a vacuum transfer chamber in the thirteenth modification. FIG. 30 is a diagram showing an example of a valve opening/closing sequence in the thirteenth modification. FIG. 31 is a diagram showing an example of an experimental result in the thirteenth modification. FIG. 32 is a diagram showing an example of an experimental result in the thirteenth modification. FIG. 33 is a diagram showing an example of an experimental result in the thirteenth modification. FIG. 34 is a diagram showing an example of an experimental result in the thirteenth modification. FIG. 35 is a diagram showing an example of an experimental result in the thirteenth modification. FIG. 36 is a diagram showing an example of a valve opening/closing sequence in the fourteenth modification. FIG. 37 is a diagram showing an example of a valve opening/closing sequence in the fifteenth modification. FIG. 38 is a diagram showing an example of a valve opening/closing sequence in the sixteenth modification. FIG. 39 is a diagram showing an example of a valve opening/closing sequence in the seventeenth modification. FIG. 40 is a diagram showing an example of a valve opening/closing sequence in Modification 18. FIG. 41 is a diagram showing an example of a valve opening/closing sequence in the nineteenth modification. FIG. 42 is a diagram showing an example of a valve opening/closing sequence in Modification 20. FIG. 43 is a diagram showing an example of a valve opening/closing sequence in Modification 21. FIG. 44 is a diagram showing an example of a valve opening/closing sequence in Modification 22. FIG. 45 is a top view showing an example of the arrangement of gas ports in the vacuum transfer chamber of the first embodiment.

Embodiments of the disclosed substrate processing apparatus, purge gas control method, and vacuum transfer chamber cleaning method are described in detail below with reference to the accompanying drawings. Note that the disclosed technology is not limited to the following embodiments.

In the vacuum transfer chamber, an airflow atmosphere is generated that flows from the purge gas supply side to the exhaust side, but this airflow atmosphere may not be uniform if the vacuum transfer chamber is wide, for example. If the airflow atmosphere is not uniform, the atmosphere inside the processing chamber may be carried out when processed substrates are removed from the processing chamber, causing outgassing accumulation. Outgassing accumulation can cause particles to be generated inside the vacuum transfer chamber. Furthermore, if the purge gas flow rate is insufficient when processed substrates are removed from the processing chamber, the atmosphere inside the processing chamber may be carried into the vacuum transfer chamber, and the residual gas may react with moisture in the vacuum transfer chamber, causing condensed particles. Therefore, it is hoped that eliminating gas stagnation will prevent particles from accumulating.

(First embodiment)
[Configuration of substrate processing apparatus 1]
1 is a cross-sectional view showing an example of a substrate processing apparatus according to a first embodiment of the present disclosure. The substrate processing apparatus 1 shown in FIG. 1 is a substrate processing apparatus capable of performing various processes, such as plasma processing, on wafers (e.g., semiconductor wafers) one by one.

The substrate processing apparatus 1 includes an apparatus main body 10 and a control device 100 that controls the apparatus main body 10. As shown in FIG. 1, the apparatus main body 10 includes a vacuum transfer chamber 11, multiple process modules 13, multiple load lock modules 15, and an EFEM (Equipment Front End Module) 18. In the following description, the vacuum transfer chamber 11 will also be referred to as a VTM (Vacuum Transfer Module) 11, the process modules 13 as PMs (Process Modules) 13, and the load lock modules 15 as LLMs (Load Lock Modules) 15.

VTM11 has a roughly rectangular shape in a plan view. Multiple PMs 13 are connected to each of two opposing side surfaces of VTM11. An LLM 15 is connected to one of the other two opposing side surfaces of VTM11. That is, VTM11 has a top surface, a bottom surface opposite the top surface, and a side surface between the top surface and the bottom surface, and the side surface has a first side surface and a second side surface opposite the first side surface. An LLM 15 is connected to the first side surface. VTM11 has a vacuum chamber, and a robot arm 12 is disposed inside.

The robot arm 12 is configured to be able to rotate, extend, and lower freely. The robot arm 12 can transfer wafers between the PM 13 and the LLM 15 by placing the wafer on a fork located at the tip. The robot arm 12 is an example of a vacuum transfer robot. Note that the robot arm 12 is not limited to the configuration shown in Figure 1, as long as it is capable of transferring wafers between the PM 13 and the LLM 15. In addition, an electrode for applying a high voltage is provided within the robot arm 12.

PM13 has a processing chamber and a cylindrical stage (mounting table) placed inside. After a wafer is placed on the stage, PM13 reduces the pressure inside and introduces processing gas. High-frequency power is then applied inside to generate plasma, which then processes the wafer. VTM11 and PM13 are separated by a gate valve 14 that can be opened and closed freely.

The LLM15 is located between the VTM11 and the EFEM18. The LLM15 has an internal pressure variable chamber whose interior can be switched between vacuum and atmospheric pressure, and has a cylindrical stage located inside. When transferring a wafer from the EFEM18 to the VTM11, the LLM15 maintains its interior at atmospheric pressure, receives the wafer from the EFEM18, and then reduces the pressure inside before transferring the wafer to the VTM11. When transferring a wafer from the VTM11 to the EFEM18, the LLM15 maintains its interior at vacuum, receives the wafer from the VTM11, and then increases the pressure inside to atmospheric pressure before transferring the wafer to the EFEM18. The LLM15 and the VTM11 are separated by a gate valve 16 that can be opened or closed. The LLM15 and the EFEM18 are separated by a gate valve 17 that can be opened or closed.

The EFEM 18 is positioned opposite the VTM 11. The EFEM 18 is a rectangular parallelepiped atmospheric transfer chamber equipped with an FFU (Fan Filter Unit) and maintained at atmospheric pressure. Three LLMs 15 are connected to one longitudinal side of the EFEM 18. Five load ports (LPs) 19 are connected to the other longitudinal side of the EFEM 18. FOUPs (Front-Opening Unified Pods) (not shown), which are containers that hold multiple wafers, are placed on the LPs 19. An atmospheric transfer robot (robot arm) (not shown) that transfers wafers is located within the EFEM 18. The EFEM 18 is an example of a loader module.

The substrate processing apparatus 1 has a control device 100. The control device 100 is, for example, a computer, and includes a CPU (Central Processing Unit), RAM (Random Access Memory), ROM (Read Only Memory), an auxiliary storage device, etc. The CPU operates based on a program stored in the ROM or the auxiliary storage device, and controls the operation of each component of the substrate processing apparatus 1.

[Details of the piping system to VTM11]
2 is a diagram showing an example of a piping system to a vacuum transfer chamber in the first embodiment. In FIG. 2, the VTM 11 is shown as being divided into two for the purpose of explaining the piping system, but in reality, there is a piping system to one VTM 11.

As shown in FIG. 2, the VTM 11 is located on the second side opposite the first side to which the LLM 15 is connected, and has a gas port 30 provided on the upper surface at the center of the second side, and gas ports 31 and 32 provided on the upper surface on both sides of the center of the second side. The VTM 11 also has gas ports 33-38 provided at the connection portion 14a of each gate valve 14 corresponding to each PM 13, and gas ports 39-41 provided at the connection portion of each gate valve 16 corresponding to the LLM 15. The VTM 11 also has an exhaust port 42 at the center of the lower surface on the first side.

The dry air supply source 50 is connected to the gas port 30 via a regulator 51, a pipe 52, and a valve 53. The regulator 51 adjusts the pressure of the dry air supplied to the pipe 52. The valve 53 controls the supply and cut-off of dry air to the gas port 30. The purge gas supply source 54 is connected to the VTM11 side of the valve 53 on the pipe 52 via a regulator 55, a pipe 56, and a valve 57. The regulator 55 adjusts the pressure of the purge gas supplied to the pipe 56. The valve 57 controls the supply and cut-off of purge gas to the gas port 30.

Furthermore, pipe 58 branches off from pipe 56, and pipes 59 and 63 branch off from pipe 58. Pipe 59 is connected to gas ports 30-32, 39, and 40 via MFC (Mass Flow Controller) 60, filter 61, and valve 62. Pipe 59 branches off into pipes 59a-59e corresponding to gas ports 30-32, 39, and 40, respectively, on the VTM11 side of valve 62. MFC 60 is a flow rate controller that controls the flow rate of purge gas in pipe 59. Filter 61 is a filter for removing particles and the like from the purge gas. Valve 62 controls the supply/stop of purge gas to gas ports 30-32, 39, and 40. Note that MFC 60 is an example of a first mass flow controller, and pipe 59 is an example of a first pipe.

Pipe 63 is connected to gas ports 39-41 via MFC 64, filter 65, and valve 66. Pipe 63 branches into pipes 63a-63c corresponding to gas ports 39-41, respectively, on the VTM11 side of valve 66. Pipes 63a-63c are also equipped with valves 67a-67c, respectively. MFC 64 controls the flow rate of purge gas in pipe 63. Filter 65 removes particles and other contaminants from the purge gas. Valve 66 controls the supply/stop of purge gas to gas ports 39-41. Note that MFC 64 is an example of a second mass flow controller, and pipe 63 is an example of a second pipe.

Pipe 58, which branches off from pipe 63, is connected to gas ports 33-38 via MFC 68, filter 69, and valve 70. Pipe 58 branches off into pipes 58a-58f, corresponding to gas ports 33-38, on the VTM11 side of valve 70. Pipes 58a-58f are equipped with valves 71a-71f, respectively. MFC 68 controls the flow rate of purge gas in pipe 58, which branches off from pipe 63. Filter 69 removes particles and other contaminants from the purge gas. Valve 70 controls the supply and stop of purge gas to gas ports 33-38. Note that MFC 68 is an example of a third mass flow controller, and pipe 58, which branches off from pipe 63, is an example of a third pipe.

The dry air supply source 50 supplies dry air into the VTM 11, for example, when the VTM 11 is open to the atmosphere. The purge gas supply source 54 supplies purge gas to the gas port 30 via pipes 56 and 52. The purge gas supply source 54 also supplies purge gas to the gas ports 30-41 via pipes 58, 59, and 63. Purge gas is constantly supplied to the gas ports 30-41 via pipes 58, 59, and 63 during normal operation. N2 gas can be used as the purge gas. Note that purge gas is supplied via pipes 56 and 52, for example, during cleaning, but not during normal operation. Alternatively, pipe 58 may be connected to regulator 55 without providing pipe 56 and valve 57.

An exhaust pipe 80 is connected to the exhaust port 42. The exhaust pipe 80 is connected to an APC (Automatic Pressure Control) 82 and a TMP (Turbo Molecular Pump) 83 via a valve 81. The TMP 83 is connected to a dry pump 84. A valve 85 is provided on the pipe that bypasses the APC 82 and TMP 83 and connects to the dry pump 84. The APC 82 is an automatic pressure control valve, which is a variable butterfly valve, and automatically controls the pressure inside the VTM 11. The TMP 83 and dry pump 84 are exhaust pumps used for vacuuming. When depressurizing from atmospheric pressure, the valve 85 is opened and exhaust is performed using only the dry pump 84. As the pressure decreases, the valve 85 is closed and exhaust is performed using the TMP 83 and dry pump 84.

[Purge gas control method]
Next, a purge gas control method according to the first embodiment will be described. Fig. 3 is a diagram showing an example of a purge gas sequence according to the first embodiment. In Fig. 3, MFC 60 (first mass flow controller) is represented as "MFC1", MFC 64 (second mass flow controller) is represented as "MFC2", and MFC 68 (third mass flow controller) is represented as "MFC3".

In addition, in Figure 3, the state of the vacuum transfer chamber is represented as "idle/transferring" when it is idle or in transfer mode. Similarly, the state of the vacuum transfer chamber is represented as "LLM exchange" when gate valve 16 is opened to transfer wafers between the LLM 15, and as "PM exchange" when gate valve 14 is opened to transfer wafers between the PM 13.

First, as an initial state, VTM11 is in an idle state (step S1), with valves 53 and 57 closed. Furthermore, the flow rate of MFC 60 is set to a predetermined flow rate (100%), for example, 1000 sccm, valve 62 is open, and purge gas is supplied so that the total flow rate of gas ports 30-32 and the total flow rate of gas ports 39 and 40 are equal. Meanwhile, the flow rates of MFC 64 and MFC 68 are controlled to 0%. Furthermore, the valve disc of APC 82 is set to a predetermined opening/closing angle, and the pressure inside VTM11 is regulated to a predetermined pressure (for example, 50 mTorr). At this time, purge gas flows from the second side opposite the first side connected to LLM 15 toward the first side, and is exhausted from exhaust port 42 on the underside of the first side.

When the gate valve 16 is opened to transfer wafers to and from the LLM 15 (step S2), the control device 100 keeps the flow rate of the MFC 60 at 100%. The control device 100 also keeps the flow rates of the MFC 64 and MFC 68 at 0%. The control device 100 may also ramp the flow rate of the MFC 64 to a predetermined flow rate (100%), as shown by the dotted line in Figure 3. When ramp control is performed, the valves 67a-67c are open, and purge gas is supplied from the gas ports 39-41. The control device 100 continues to control the APC 82 to adjust the pressure by specifying an angle.

The controller 100 moves the wafer into the VTM 11 using the robot arm 12 and closes the gate valve 16. The controller 100 then transports the wafer using the robot arm 12 from just before the gate valve 16 to just before the gate valve 14 of the PM 13, the destination. While the wafer is being transported in this manner (step S3), the controller 100 keeps the flow rate of the MFC 60 at 100%. The controller 100 also sets the flow rates of the MFC 64 and MFC 68 to 0%. The controller 100 continues to control the APC 82 to adjust the pressure by specifying an angle.

When the control device 100 opens the gate valve 14 to load or unload wafers between the PM 13 (step S4), it leaves the flow rate of the MFC 60 at 100%. The control device 100 also leaves the flow rate of the MFC 64 at 0%. Meanwhile, the control device 100 ramps the flow rate of the MFC 68 to a predetermined flow rate (100%). At this time, valves 71a-71f are open, and purge gas is supplied from gas ports 33-38. This suppresses turbulence in the airflow within the VTM 11 caused by purge gas flowing toward the PM 13. The control device 100 continues to control the APC 82 to adjust pressure by specifying an angle.

After placing the wafer in the PM 13, the controller 100 moves the robot arm 12 into the VTM 11 and closes the gate valve 14. The VTM 11 returns to the idle state (step S1). In this case, as in step S3, the controller 100 keeps the flow rate of the MFC 60 at 100%. The controller 100 also sets the flow rates of the MFCs 64 and 68 to 0%. The controller 100 continues to control the APC 82 to adjust the pressure by specifying an angle. This uniforms the flow of purge gas within the VTM 11, eliminating stagnation of purge gas containing residual gas components and suppressing particle accumulation. It also makes it less likely for deposits to adhere to the side walls within the VTM 11.

As described above, the VTM11 is provided with at least one gas port (gas ports 30-32) on its top surface near the second side, which is connected to a purge gas supply source 54 and a pipe 59 that supplies purge gas into the VTM11. The purge gas supplied from the gas port is exhausted from at least one exhaust port 42, which is provided on the bottom surface near the first side of the VTM11 and to which a TMP 83 and a dry pump 84 are connected, which exhaust the purge gas supplied to the VTM11. In other words, the at least one gas port (gas ports 30-32) and the exhaust port 42 are arranged so that the purge gas flow is directed from the second side to the first side.

"Near the second side" refers to the portion of the top surface closest to the second side when the distance from the first side to the second side is divided into eight equal parts in that direction (the portion from the second side toward the first side), and the gas port is located in this portion. More preferably, the gas port may be located in the portion of the top surface closest to the second side when the distance from the first side to the second side is divided into ten equal parts (the portion from the second side toward the first side). Even more preferably, the gas port may be located in the portion of the top surface closest to the second side when the distance from the first side to the second side is divided into twenty equal parts (the portion from the second side toward the first side). Instead of being located near the second side surface, at least one gas port (gas ports 30-32) may be located on the portion of the second side surface closer to the top surface (up to 50% of the way from the top surface to the bottom surface) when the second side surface is divided into two equal parts from the bottom surface to the top surface of the VTM 11. Providing the gas port closer to the second side surface reduces the area to which purge gas is not supplied, which is desirable from the perspective of equalizing the airflow atmosphere over a wide area.

Figure 45 is a top view showing an example of the arrangement of gas ports in the vacuum transfer chamber of the first embodiment. Figure 45 shows a top view of the configuration of the substrate processing apparatus 1 (excluding the EFEM 18 and LP 19). As shown in Figure 45, in the example of dividing into eight equal parts, when the line segment AB between the first side surface 11a and the second side surface 11b is divided into eight equal parts, gas ports are provided on the top surface closest to the second side surface 11b, i.e., the shaded area. Similarly, in the example of dividing into ten equal parts or twenty equal parts, when the line segment AB in Figure 45 is divided into ten equal parts or twenty equal parts, gas ports are provided on the top surface closest to the second side surface 11b.

The VTM 11 may be rectangular in plan view, or the second side 11b may be composed of two sides, as shown by the second side 11c, and may be polygonal in plan view, such as a pentagon.

The VTM 11 may have at least one gas port (gas ports 39-41) connected to the piping 59 provided on the top surface near the first side, and an exhaust port 42 provided on the bottom surface near the second side. In other words, the positions of the at least one gas port (gas ports 39-41) and the exhaust port 42 may be such that the purge gas flow is directed from the first side to the second side.

"Near the first side" refers to the portion of the top surface closest to the first side when the distance from the first side to the second side is divided into eight equal parts in that direction (a portion extending from the first side toward the second side), and the gas port is located in this portion. More preferably, the gas port may be located in the portion of the top surface closest to the first side when the distance from the second side to the first side is divided into ten equal parts (a portion extending from the first side toward the second side). Even more preferably, the gas port may be located in the portion of the top surface closest to the first side when the distance from the second side to the first side is divided into twenty equal parts (a portion extending from the first side toward the second side). That is, in the vicinity of the first side surface, as shown in FIG. 45, for example, in the example of dividing into eight equal parts, when the line segment AB between the first side surface 11a and the second side surface 11b is divided into eight equal parts, a gas port is provided on the top surface closest to the first side surface 11a. Similarly, in the example of dividing into ten equal parts or twenty equal parts, when the line segment AB in FIG. 45 is divided into ten equal parts or twenty equal parts, a gas port is provided on the top surface closest to the first side surface 11a.

The exhaust port 42 is located near the first side when at least one gas port (gas ports 30-32) is located near the second side. In other words, when the bottom surface is divided into eight equal parts from the first side to the second side, the exhaust port 42 is located in the part of the bottom surface closest to the first side (up to 12.5% of the distance from the first side toward the second side). More preferably, when the bottom surface is divided into ten equal parts from the second side to the first side, the exhaust port 42 may be located in the part of the bottom surface closest to the first side (up to 10% of the distance from the first side toward the second side). Even more preferably, when the bottom surface is divided into twenty equal parts from the second side to the first side, the exhaust port 42 may be located in the part of the bottom surface closest to the first side (up to 5% of the distance from the first side toward the second side). That is, as shown in Figure 45, in the example of dividing into eight equal parts, when the line segment AB between the first side surface 11a and the second side surface 11b is divided into eight equal parts, the exhaust port 42 is provided on the bottom surface closest to the first side surface 11a. Similarly, in the example of dividing into ten or twenty equal parts, when the line segment AB in Figure 45 is divided into ten or twenty equal parts, the exhaust port 42 is provided on the bottom surface closest to the first side surface 11a.

Furthermore, when at least one gas port (gas ports 30-32) is located near the first side, the exhaust port 42 is located near the second side. In other words, when the bottom surface is divided into eight equal parts from the first side to the second side, the exhaust port 42 is located in the part of the bottom surface closest to the second side (up to 12.5% of the distance from the second side toward the first side). More preferably, when the bottom surface is divided into ten equal parts from the second side to the first side, the exhaust port 42 may be located in the part of the bottom surface closest to the second side (up to 10% of the distance from the second side toward the first side). Even more preferably, when the bottom surface is divided into twenty equal parts from the second side to the first side, the exhaust port 42 may be located in the part of the bottom surface closest to the second side (up to 5% of the distance from the second side toward the first side).

[Experimental Results]
Next, an experimental example and a reference example in the first embodiment using simulations will be described with reference to Figures 4 to 7. Figures 4 and 5 are diagrams showing an example of experimental results in the first embodiment. Figures 6 and 7 are diagrams showing an example of experimental results in the reference example. Note that in Figures 4 to 7, there are portions where the airflow extends outside the VTM 11, etc., but this is just an expression in the simulation, and in reality, the airflow does not extend outside the VTM 11, etc.

In the experimental example shown in Figures 4 and 5, purge gas was supplied into VTM11 at 100 sccm through gas port 30, 200 sccm each through gas ports 31 and 32, and 250 sccm each through gas ports 39 and 40, and exhausted from exhaust port 42. As a result, the flow of purge gas within VTM11 became uniform, and there was a flow of purge gas even near the surface where PM13 was connected.

On the other hand, in the reference example shown in Figures 6 and 7, 1000 sccm of purge gas was supplied into the VTM 120 from the gas port 121 and exhausted from the exhaust port 122. As a result, the flow of purge gas within the VTM 120 was not uniform, and there were areas where the purge gas stagnated at the four corners of the VTM 120. There were also areas where the purge gas stagnated at the connection with the PM 13. As such, it can be seen that in the experimental example, the purge gas flows more uniformly throughout the entire VTM 11 than in the reference example.

[Modification 1]
In the embodiment described above, the purge gas is supplied into the VTM 11 using three pipes, namely, pipes 58, 59, and 63, but pipes 58 and 63 may be combined into one system, and an embodiment in this case will be described as Modification 1. Note that the substrate processing apparatus in Modification 1 is similar to the substrate processing apparatus 1 of the embodiment described above, and therefore, a description of the overlapping configuration and operation will be omitted.

Figure 8 shows an example of a piping system to a vacuum transfer chamber in Modification 1. As shown in Figure 8, the piping system in Modification 1 has piping 59 similar to that of the above embodiment, but includes piping 90 instead of piping 58 and piping 63 branched from piping 59. Pipe 90 is connected to gas ports 33-41 via MFC 91, filter 92, and valve 93. Pipe 90 branches into piping 90a-90i corresponding to gas ports 33-41 on the VTM11 side of valve 93. Pipes 90a-90i are each provided with valves 94a-94i. MFC 91 controls the flow rate of purge gas in piping 90. Filter 92 is a filter for removing particles and the like from the purge gas. Valve 93 controls the supply/stop of purge gas to gas ports 33-41. Valves 94a-94i individually control the supply/stop of purge gas to gas ports 33-41 through pipes 90a-90i, respectively. Note that MFC 91 is an example of a fourth mass flow controller, and pipe 90 is an example of a fourth pipe. Furthermore, pipe 58 may be connected to regulator 55 without providing pipe 56 and valve 57.

[Modification 1 of Purge Gas Control Method]
Next, a purge gas control method according to Modification 1 will be described. Fig. 9 is a diagram showing an example of a purge gas sequence according to Modification 1. In Fig. 9, the MFC 60 (first mass flow controller) is represented as "MFC1," and the MFC 91 (fourth mass flow controller) is represented as "MFC4." In Fig. 9, the states of the vacuum transfer chamber are represented as "idle/transferring,""LLMreplacement," and "PM replacement," similar to Fig. 3.

First, as an initial state, the VTM 11 is in an idle state (step S11), with valves 53 and 57 closed. The flow rate of the MFC 60 is set to a predetermined flow rate (100%), for example, 1000 sccm, and valve 62 is open. Purge gas is supplied so that the total flow rate of gas ports 30-32 is equal to the total flow rate of gas ports 39 and 40. Meanwhile, the flow rate of the MFC 91 is controlled to 0%. The valve disc of the APC 82 is set to a predetermined opening/closing angle, and the pressure inside the VTM 11 is regulated to a predetermined pressure (for example, 50 mTorr). At this time, the purge gas flows from the second side opposite the first side connected to the LLM 15 toward the first side, and is exhausted from the exhaust port 42 on the underside of the first side.

When the control device 100 opens the gate valve 16 to load or unload wafers between the LLM 15 (step S12), the flow rate of the MFC 60 remains at 100%. The control device 100 ramps the flow rate of the MFC 91 to change it to the specified flow rate (100%). At this time, valves 94a-94i are open, and purge gas is supplied from gas ports 33-41. Note that valves 94a-94f, which are on the PM 13 side, can be closed, and purge gas can be supplied from gas ports 39-41. The control device 100 also continues to control the APC 82 to adjust pressure by specifying an angle.

The controller 100 moves the wafer into the VTM 11 using the robot arm 12 and closes the gate valve 16. The controller 100 then transports the wafer using the robot arm 12 from just before the gate valve 16 to just before the gate valve 14 of the PM 13, the destination. While the wafer is being transported in this manner (step S13), the controller 100 keeps the flow rate of the MFC 60 at 100%. The controller 100 also sets the flow rate of the MFC 91 to 0%. The controller 100 continues to control the APC 82 to adjust the pressure by specifying an angle.

When the control device 100 opens the gate valve 14 to load or unload wafers between the PM 13 (step S14), the flow rate of the MFC 60 remains at 100%. The control device 100 ramps the flow rate of the MFC 91 to a predetermined flow rate (100%). At this time, valves 94a-94i are open, and purge gas is supplied from gas ports 33-41. Note that valves 94g-94i, which are on the LLM 15 side, can be closed, and purge gas can be supplied from gas ports 33-38. This can suppress turbulence in the airflow within the VTM 11 caused by purge gas flowing toward the PM 13. The control device 100 continues to control the APC 82 to adjust pressure by specifying an angle.

After placing the wafer in the PM 13, the controller 100 moves the robot arm 12 into the VTM 11 and closes the gate valve 14. The VTM 11 returns to the idle state (step S11). In this case, as in step S13, the controller 100 keeps the flow rate of the MFC 60 at 100%. The controller 100 also sets the flow rate of the MFC 91 to 0%. The controller 100 continues to control the APC 82 to adjust the pressure by specifying an angle. This uniforms the flow of purge gas within the VTM 11, eliminating stagnation of purge gas containing residual gas components and suppressing particle accumulation. Furthermore, the piping system can be reduced compared to the above embodiment.

[Modification 2]
In the above-described embodiment and modified example 1, the MFC 60 is provided in the pipe 59 to control the flow rate of the purge gas discharged (supplied) from the gas ports 30 to 32, 39, and 40, but an orifice may be used instead of the MFC 60, and an embodiment in this case will be described as modified example 2. Note that the substrate processing apparatus in modified example 2 is similar to the substrate processing apparatus 1 in the above-described embodiment and modified example 1, and therefore, a description of the overlapping configuration and operation will be omitted.

Figure 10 is a diagram showing an example of a piping system to a vacuum transfer chamber in Modification 2. As shown in Figure 10, the piping system in Modification 2 has an orifice 95 instead of the MFC 60 compared to Modification 1. The piping system in Modification 2 is the same as Modification 1 except for the orifice 95. The orifice 95 sets the purge gas in piping 59 to a predetermined flow rate. The piping 59 having the orifice 95 is an example of a fifth piping, the valve 62 provided in the piping 59 having the orifice 95 is an example of a first valve, and the orifice 95 is an example of a first orifice. It is also possible to connect piping 58 to regulator 55 without providing piping 56 and valve 57.

[Modification 2 of Purge Gas Control Method]
Next, a purge gas control method according to Modification 2 will be described. Fig. 11 is a diagram showing an example of a purge gas sequence according to Modification 2. In Fig. 11, the orifice 95 (first orifice) is represented as "orifice 1," and the MFC 91 (fourth mass flow controller) is represented as "MFC4." In Fig. 11, the states of the vacuum transfer chamber are represented as "idle/transferring,""LLMreplacement," and "PM replacement," similar to Fig. 3.

First, as an initial state, the VTM 11 is in an idle state (step S21), with valves 53 and 57 closed. The orifice 95 is set to a predetermined flow rate (represented as 100% in FIG. 11), for example, 1000 sccm. Valve 62 is open, and purge gas is supplied so that the total flow rate of gas ports 30-32 and the total flow rate of gas ports 39 and 40 are equal. Meanwhile, the MFC 91 is controlled to a flow rate of 0%. The APC 82 has its valve disc set to a predetermined opening/closing angle, and the pressure inside the VTM 11 is regulated to a predetermined pressure (for example, 50 mTorr). At this time, the purge gas flows from the second side opposite the first side connected to the LLM 15 toward the first side, and is exhausted from the exhaust port 42 on the underside of the first side.

When the gate valve 16 is opened to load or unload wafers between the LLM 15 (step S22), the flow rate of the orifice 95 cannot be changed and remains at 100%. Meanwhile, the control device 100 ramps the flow rate of the MFC 91 to change it to the specified flow rate (100%). At this time, valves 94a-94i are open, and purge gas is supplied from gas ports 33-41. Valves 94a-94f are on the PM 13 side, so they can be closed and purge gas can be supplied from gas ports 39-41. The control device 100 also continues to control the APC 82 to adjust pressure by specifying an angle.

The controller 100 moves the wafer into the VTM 11 using the robot arm 12 and closes the gate valve 16. The controller 100 then transports the wafer using the robot arm 12 from just before the gate valve 16 to just before the gate valve 14 of the PM 13, the destination. While the wafer is being transported in this way (step S23), the flow rate of the orifice 95 cannot be changed and remains at 100%. The controller 100 also sets the flow rate of the MFC 91 to 0%. The controller 100 continues to control the APC 82 to adjust the pressure by specifying the angle.

When the gate valve 14 is opened to load or unload wafers between the PM 13 (step S24), the flow rate of the orifice 95 cannot be changed and remains at 100%. The control device 100 ramps the flow rate of the MFC 91 to change it to the specified flow rate (100%). At this time, valves 94a to 94i are open, and purge gas is supplied from gas ports 33 to 41. Note that valves 94g to 94i, which are on the LLM 15 side, can be closed, and purge gas can be supplied from gas ports 33 to 38. This can suppress turbulence in the airflow within the VTM 11 caused by purge gas flowing toward the PM 13 side. The control device 100 continues to control the APC 82 to adjust pressure by specifying an angle.

After placing the wafer in the PM 13, the controller 100 moves the robot arm 12 into the VTM 11 and closes the gate valve 14. The VTM 11 returns to the idle state (step S21). In this case, as in step S23, the flow rate of the orifice 95 cannot be changed and remains at 100%. The controller 100 also sets the flow rate of the MFC 91 to 0%. The controller 100 continues to control the APC 82 to adjust the pressure by specifying an angle. This uniforms the flow of purge gas within the VTM 11, eliminating stagnation of purge gas containing residual gas components and suppressing particle accumulation. Furthermore, the piping system can be reduced compared to the above embodiment. Furthermore, by replacing the MFC 60 with the inexpensive orifice 95, costs can be reduced compared to the above variant 1.

[Modification 3]
In the above-described modified example 1, the pipe 90 is provided with the MFC 91, the filter 92, and the valve 93, and the pipe 90 branches into pipes 90a to 90i on the VTM 11 side of the valve 93, but an orifice, a filter, and a valve may be provided in the branched pipe, and an embodiment in this case will be described as modified example 3. Note that the substrate processing apparatus in modified example 3 is similar to the substrate processing apparatus 1 in the above-described embodiment and modified example 1, and therefore, a description of the overlapping configuration and operation will be omitted.

Figure 12 shows an example of a piping system to a vacuum transfer chamber in variant 3. As shown in Figure 12, the piping system in variant 3 has piping 59 similar to that of variant 1, but includes piping 96 instead of piping 90. Pipe 96 branches into piping 96a-96i, which correspond to gas ports 33-41, respectively. Pipes 96a-96i are also provided with orifices 97a-97i, filters 98a-98i, and valves 94a-94i, respectively. Orifices 97a-97i set the purge gas for each of pipes 96a-96i to a predetermined flow rate. Filters 98a-98i are filters for removing particles and the like from the purge gas. Valves 94a-94i individually control the supply/stop of purge gas to gas ports 33-41 for each of pipes 96a-96i. Note that pipe 96 is an example of a sixth pipe, orifices 97a-97i are an example of a second orifice, and valves 94a-94i are an example of a second valve. Also, pipe 58 may be connected to regulator 55 without providing pipe 56 and valve 57.

[Purge Gas Control Method of Modified Example 3]
Next, a purge gas control method according to Modification 3 will be described. Fig. 13 is a diagram showing an example of a purge gas sequence according to Modification 3. In Fig. 13, the MFC 60 (first mass flow controller) is represented as "MFC1," and the orifices 97a to 97i (second orifices) are represented as "orifice 2." In Fig. 13, the states of the vacuum transfer chamber are represented as "idle/transferring,""LLMreplacement," and "PM replacement," similar to Fig. 3.

First, as an initial state, the VTM 11 is in an idle state (step S31), with valves 53 and 57 closed. The flow rate of the MFC 60 is set to a predetermined flow rate (100%), for example, 1000 sccm, and valve 62 is open. Purge gas is supplied so that the total flow rate of gas ports 30-32 is equal to the total flow rate of gas ports 39 and 40. Meanwhile, the flow rate of pipes 96a-96i is controlled to 0% by closing valves 94a-94i. The valve disc of the APC 82 is set to a predetermined opening/closing angle, and the pressure inside the VTM 11 is regulated to a predetermined pressure (for example, 50 mTorr). At this time, the purge gas flows from the second side opposite the first side connected to the LLM 15 toward the first side, and is exhausted from the exhaust port 42 on the underside of the first side.

When the control device 100 opens the gate valve 16 to load or unload wafers between the LLM 15 (step S32), the flow rate of the MFC 60 remains at 100%. The control device 100 opens valves 94a-94i. At this time, purge gas is supplied from gas ports 33-41 at flow rates set by orifices 97a-97i, respectively. Note that valves 94a-94f, which are on the PM 13 side, can be closed, and purge gas can be supplied from gas ports 39-41. The control device 100 also continues to control the APC 82 to adjust pressure by specifying an angle.

The controller 100 moves the wafer into the VTM 11 using the robot arm 12 and closes the gate valve 16. The controller 100 then transports the wafer using the robot arm 12 from just before the gate valve 16 to just before the gate valve 14 of the PM 13, the destination. While the wafer is being transported in this manner (step S33), the controller 100 maintains the flow rate of the MFC 60 at 100%. The controller 100 also closes valves 94a-94i and sets the flow rate to gas ports 33-41 to 0%. The controller 100 continues to control the APC 82 to adjust the pressure by specifying an angle.

When the control device 100 opens the gate valve 14 to load or unload wafers between the PM 13 (step S34), the flow rate of the MFC 60 remains at 100%. The control device 100 opens valves 94a-94i. At this time, purge gas is supplied from gas ports 33-41 at the flow rates set by orifices 97a-97i, respectively. Note that valves 94g-94i, which are on the LLM 15 side, can be closed and purge gas can be supplied from gas ports 33-38. This can suppress turbulence in the airflow within the VTM 11 caused by purge gas flowing toward the PM 13 side. The control device 100 continues to control the APC 82 to adjust pressure by specifying an angle.

After placing the wafer in the PM 13, the control device 100 moves the robot arm 12 into the VTM 11 and closes the gate valve 14. The control device 100 returns to the idle state (step S31). In this case, as in step S33, the control device 100 maintains the flow rate of the MFC 60 at 100%. The control device 100 also closes valves 94a-94i and sets the flow rate to gas ports 33-41 to 0%. The control device 100 continues to control the APC 82 to adjust the pressure by specifying an angle. This uniforms the flow of purge gas within the VTM 11, eliminating stagnation of purge gas containing residual gas components and suppressing particle accumulation. Furthermore, the piping system can be reduced compared to the above embodiment. Furthermore, instead of the MFC 91, the flow rate to the gas ports 33-41 is controlled using inexpensive orifices 97a-97i and valves 94a-94i, thereby reducing costs compared to the first variation described above.

Second Embodiment
In the first embodiment and modifications 1 to 3 described above, the flow of purge gas within the VTM 11 is made uniform to prevent particle accumulation, but the time required for particles to be discharged may be shortened, and this embodiment will be described as embodiment 2. Note that the substrate processing apparatus in the second embodiment is similar to the substrate processing apparatus 1 in modification 1 described above, and therefore, a description of the overlapping configuration and operation will be omitted.

In the vacuum transfer chamber, an airflow atmosphere is generated that flows from the purge gas supply side to the exhaust side. However, if the vacuum transfer chamber is large, the purge gas flow weakens and it takes time for the particles to be exhausted to the exhaust port. This increases the cleaning time. Furthermore, because the purge gas flow weakens, there are areas in the vacuum transfer chamber where the shock waves from the purge gas do not reach. Therefore, it is hoped that the shock waves from the purge gas will be distributed throughout the entire vacuum transfer chamber, thereby shortening the cleaning time of the vacuum transfer chamber.

[Details of the piping system to VTM11]
Next, differences between the substrate processing apparatus of the second embodiment and the substrate processing apparatus 1 of Modification 1 will be described. In the VTM 11 of the second embodiment, the MFC 91 controls the flow rate of the purge gas to approximately 500 sccm or more for each of the gas ports 33 to 41 when the valves 94a to 94i are open. Also, an MFC (not shown) is provided in the piping 56, and controls the flow rate of the purge gas to approximately 500 sccm or more for the gas port 30 when the valve 57 is open. The gas port 30 is an example of a first gas port. The gas ports 33 to 41 are examples of second gas ports.

The purge gas supply source 54 supplies purge gas to the gas ports 30, 33-41 via pipes 56 and 90. The supply of purge gas to the gas ports 30, 33-41 via pipes 56 and 90 is performed during normal operation and when performing NPPC (Non Plasma Process Cleaning), a cleaning process that does not use plasma. During normal operation, for example, purge gas is continuously flowed at a predetermined flow rate from the gas port 30. N2 gas can be used as the purge gas. In the second embodiment, the supply of purge gas when performing NPPC will be described.

The APC 82 is an automatic pressure control valve, a variable butterfly valve, that automatically controls the pressure within the VTM 11. To impart a high viscosity to the purge gas supplied from the gas ports 30, 33-41, it is preferable to control the pressure within the VTM 11 to, for example, 133 Pa (1 Torr) or higher. Pressure control can be performed using the APC 82 while exhausting using the TMP 83, or by opening the valve 85 and exhausting only using the dry pump 84, while controlling the gas flow rate of the purge gas. A particle monitor (not shown) is connected directly below the valve 81 and monitors particles contained in the exhaust passing through the exhaust pipe 80. The particle monitor is an example of a particle detector. Note that the particle monitor may not be installed if monitoring of particles contained in the exhaust is not required.

[Method for cleaning the vacuum transfer chamber 11]
Next, a method for cleaning a vacuum transfer chamber according to a second embodiment will be described. In the second embodiment, the piping system to the VTM 11 uses the piping system in Modification 1 shown in FIG. 8 . FIG. 14 is a diagram showing an example of a valve opening and closing sequence in the second embodiment. In FIG. 14, gas ports 33-40 and corresponding valves 94a-94h are operated in pairs, with the valves located in opposing positions. Gas port 41 and valve 94i are not used in the valve opening and closing sequence shown in FIG. 14. In FIG. 14, the open state of a valve is represented as "open," and the closed state as "close."

When cleaning the VTM 11, the control device 100 first controls the valve 57 to supply purge gas for a predetermined time from gas port 30, the first gas port located farthest from the exhaust port 42 of the VTM 11. The predetermined time can be, for example, 1 to 5 seconds. The control device 100 may also clean the VTM 11 if a particle monitor (not shown) installed immediately after the valve 81 detects a particle count equal to or greater than a threshold value.

The control device 100 then controls valves 94a and 94f to supply purge gas for a predetermined period of time from the second gas port pair, gas ports 33 and 38, which are located closer to the LLM 15 than gas port 30.

The control device 100 similarly supplies purge gas for a predetermined time from the gas port 30 side toward the exhaust port 42 side, sequentially through the pair of gas ports 34 and 37, the pair of gas ports 35 and 36, and the pair of gas ports 39 and 40. In other words, the control device 100 controls the opening and closing of the valves in the following order: the pair of valves 94b and 94e, the pair of valves 94c and 94d, and the pair of valves 94g and 94h. This generates a viscous flow of purge gas within the VTM 11 from the gas port 30 toward the exhaust port 42, allowing shock waves (physical vibrations) of the purge gas to be distributed throughout the entire VTM 11, even if the VTM 11 is large. Furthermore, by efficiently moving particles within the VTM 11 toward the exhaust port 42, the cleaning time for the VTM 11 can be shortened.

[Experimental Results]
Next, an experimental example of the second embodiment using a simulation will be described with reference to Figures 15 to 19. Figures 15 to 19 are diagrams showing an example of the experimental results of the second embodiment. Note that in Figures 15 to 19, there are portions where the airflow extends outside the VTM 11, but this is just an expression in the simulation, and in reality, the airflow does not extend outside the VTM 11.

Figure 15 shows the pressure distribution and flow of purge gas when purge gas is supplied from the gas port 30 for a predetermined period of time. In this case, it can be seen that shock waves reach the wall surface of the VTM 11 near the gas port 30. Note that it is believed that simply supplying purge gas from the gas port 30 would not have caused shock waves to reach the wall surface on the exhaust port 42 side of the VTM 11.

Figure 16 shows the pressure distribution and flow of purge gas when purge gas is supplied for a predetermined period of time from the pair of gas ports 33 and 38. In this case, it can be seen that shock waves reach the wall surface of the VTM 11 near the gas ports 33 and 38, and the flow of purge gas toward the exhaust port 42 becomes stronger.

Figure 17 shows the pressure distribution and flow of purge gas when purge gas is supplied for a predetermined period of time from the pair of gas ports 34 and 37. In this case, it can be seen that a shock wave reaches the wall surface of the VTM 11 near the gas ports 34 and 37, and the purge gas does not flow toward the gas port 30, but instead flows toward the exhaust port 42.

Figure 18 shows the pressure distribution and flow of purge gas when purge gas is supplied for a predetermined period of time from the pair of gas ports 35, 36. In this case, it can be seen that a shock wave reaches the wall surface of the VTM 11 near the gas ports 35, 36, and the purge gas does not flow toward the gas port 30, but instead flows toward the exhaust port 42.

Figure 19 shows the pressure distribution and flow of purge gas when purge gas is supplied from a pair of gas ports 39, 40 for a predetermined period of time. In this case, a shock wave reaches the wall surface of the VTM 11 near the gas ports 39, 40, and the purge gas spreads near the exhaust port 42, but does not flow much toward the gas port 30, and instead flows toward the exhaust port 42. In this way, by supplying purge gas in order from Figure 15 to Figure 19, the viscous flow of purge gas from the gas port 30 toward the exhaust port 42 efficiently moves particles inside the VTM 11 toward the exhaust port 42 and is discharged.

[Variations of valve opening and closing sequences]
In the above-described embodiment, the purge gas supply sequences for gas port 30, the set of gas ports 33 and 38, the set of gas ports 34 and 37, the set of gas ports 35 and 36, and the set of gas ports 39 and 40 are non-overlapping. However, partial overlap or simultaneous supply between two sets of gas ports is also possible. These embodiments will be described as Modifications 4 to 12. Note that, in Modifications 4 to 12, as in the second embodiment, the gas ports 33 to 40 and the corresponding valves 94a to 94h are operated as a set of valves located opposite each other. Furthermore, gas port 41 and valve 94i are not used in the valve opening and closing sequences shown in Modifications 4 to 12. Note that the substrate processing apparatus in Modifications 4 to 12 is similar to the substrate processing apparatus 1 of the second embodiment, and therefore, a description of the overlapping configurations and operations will be omitted.

[Modification 4]
20 is a diagram showing an example of a valve opening/closing sequence in Modification 4. In Modification 4 shown in Fig. 20, when cleaning the VTM 11, the control device 100 first controls the valve 57 to supply purge gas for a predetermined time from gas port 30, which is the first gas port located farthest from the exhaust port 42 of the VTM 11.

The control device 100 then controls the valves 94a and 94f to supply purge gas from the pair of gas ports 33 and 38 for a predetermined period of time.

The control device 100 similarly controls the pair of valves 94b and 94e so that purge gas is supplied from the pair of gas ports 34 and 37 from the gas port 30 side toward the exhaust port 42 side for a predetermined period of time.

The control device 100 then synchronizes and controls the pair of valves 94c and 94d and the pair of valves 94g and 94h so that purge gas is simultaneously supplied to the pair of gas ports 35 and 36 and the pair of gas ports 39 and 40 for a predetermined period of time. This makes it possible to suppress the flow of purge gas from the pair of gas ports 39 and 40 toward gas port 30. Furthermore, the cleaning time can be shortened compared to the second embodiment.

[Modification 5]
21 is a diagram showing an example of a valve opening/closing sequence in Modification 5. In Modification 5 shown in Fig. 21, when cleaning the VTM 11, the control device 100 first controls the valve 57 to supply purge gas for a predetermined time from gas port 30, which is the first gas port located farthest from the exhaust port 42 of the VTM 11.

The control device 100 then controls the valves 94a and 94f to supply purge gas from the pair of gas ports 33 and 38 for a predetermined time before the lapse of a predetermined time at the gas port 30. In other words, while purge gas is being supplied from the gas port 30, the supply of purge gas from the pair of gas ports 33 and 38 begins.

The control device 100 then controls the pair of valves 94b and 94e so that purge gas is supplied from the pair of gas ports 34 and 37 for a predetermined time before the predetermined time has elapsed for the pair of gas ports 33 and 38. In other words, while purge gas is being supplied from the pair of gas ports 33 and 38, the supply of purge gas from the pair of gas ports 34 and 37 begins.

The control device 100 then controls the pair of valves 94c and 94d so that purge gas is supplied from the pair of gas ports 35 and 36 for a predetermined time before the elapse of a predetermined time for the pair of gas ports 34 and 37. In other words, while purge gas is being supplied from the pair of gas ports 34 and 37, the supply of purge gas from the pair of gas ports 35 and 36 begins.

The control device 100 then controls the pair of valves 94g and 94h to supply purge gas from the pair of gas ports 39 and 40 for a predetermined time before the predetermined time has elapsed for the pair of gas ports 35 and 36. In other words, while purge gas is being supplied from the pair of gas ports 35 and 36, the supply of purge gas from the pair of gas ports 39 and 40 begins. This allows the viscous flow to continue from the gas port 30 side toward the exhaust port 42 side, making it easier for particles to flow toward the exhaust port 42 and reducing the number of particles returning to the gas port 30 side. Furthermore, because the times at which purge gas is supplied overlap, the cleaning time can be further shortened.

[Modification 6]
22 is a diagram showing an example of a valve opening and closing sequence in Modification 6. Modification 6 shown in Fig. 22 is a case where the valve opening and closing sequence of Modification 5 is repeated. When cleaning the VTM 11, the control device 100 first controls the valve 57 to supply purge gas for a predetermined time from gas port 30, which is the first gas port located farthest from the exhaust port 42 of the VTM 11.

The control device 100 controls the valves 94a and 94f to supply purge gas from the pair of gas ports 33 and 38 for a predetermined time before the predetermined time has elapsed at the gas port 30. In other words, while purge gas is being supplied from the gas port 30, the supply of purge gas from the pair of gas ports 33 and 38 begins. As in Variation 5, the control device 100 then supplies purge gas from the pair of gas ports 33 and 38, the pair of gas ports 34 and 37, the pair of gas ports 35 and 36, and the pair of gas ports 39 and 40, with each supplying a predetermined time overlapping the others.

When the control device 100 has completed the supply of purge gas from the set of gas ports 39 and 40 for a predetermined period of time, it again supplies purge gas to gas port 30, the set of gas ports 33 and 38, the set of gas ports 34 and 37, the set of gas ports 35 and 36, and the set of gas ports 39 and 40, in that order, with each supply overlapping for a predetermined period of time. The number of times the valve opening and closing sequence from gas port 30 to the set of gas ports 39 and 40 can be repeated is not limited. If a particle monitor device is provided, the valve opening and closing sequence is repeated even if the particle amount does not fall below the reference value in one valve opening and closing sequence, and is terminated when the particle amount falls below the reference value. If a particle monitor device is not provided, the valve opening and closing sequence may be repeated a predetermined number of times and then terminated.

[Modification 7]
23 is a diagram showing an example of a valve opening/closing sequence in Modification 7. Modification 7 shown in FIG. 23 is a case where, among the valve opening/closing sequences of Modification 5, purge gas is controlled to be supplied simultaneously for a predetermined time to the pair of gas ports 35, 36 and the pair of gas ports 39, 40. In other words, Modification 7 is a pattern that combines Modifications 4 and 5, and therefore a detailed description thereof will be omitted. Modification 7 can suppress the flow of purge gas from the pair of gas ports 39, 40 toward gas port 30. Furthermore, Modification 7 can further shorten the cleaning time.

[Modification 8]
24 is a diagram showing an example of a valve opening and closing sequence in Modification 8. Modification 8 is a case in which the valve opening and closing sequence of Modification 7 is repeated in the same manner as Modification 6. As with Modification 6, Modification 8 does not limit the number of times a series of valve opening and closing sequences is repeated. If a particle monitor device is provided, even if the amount of particles does not fall below the reference value in one valve opening and closing sequence, the series of valve opening and closing sequences is repeated and terminated when the amount of particles falls below the reference value. If a particle monitor device is not provided, the series of valve opening and closing sequences may be repeated a predetermined number of times and then terminated.

[Modification 9]
25 is a diagram showing an example of a valve opening/closing sequence in Modification 9. In Modification 9 shown in Fig. 25, when cleaning the VTM 11, the control device 100 first controls the valve 57 to supply purge gas for a predetermined time from gas port 30, which is the first gas port located farthest from the exhaust port 42 of the VTM 11. The control device 100 repeats the supply of purge gas for the predetermined time from gas port 30 a predetermined number of times, for example, three times.

The control device 100 then controls the valves 94a and 94f to supply purge gas for a predetermined time from the pair of gas ports 33 and 38. The control device 100 repeats the supply of purge gas for a predetermined time from the pair of gas ports 33 and 38 a predetermined number of times, for example, three times.

The control device 100 repeats the supply of purge gas for a predetermined time a predetermined number of times, for example, three times, in the order of gas ports 34 and 37, gas ports 35 and 36, and gas ports 39 and 40, from the gas port 30 side toward the exhaust port 42 side. In other words, the control device 100 repeats valve opening and closing control a predetermined number of times in the order of valves 94b and 94e, valves 94c and 94d, and valves 94g and 94h. This allows particles that are not detached by a single purge gas shock wave to be detached. The series of valve opening and closing sequences of Variation 9 may be repeated as in Variation 6.

[Modification 10]
FIG. 26 is a diagram showing an example of a valve opening/closing sequence in Modification 10. Modification 10 shown in FIG. 26 is a case where, among the valve opening/closing sequences of Modification 9, the supply of purge gas for a predetermined time to the pair of gas ports 35 and 36 and the pair of gas ports 39 and 40 is controlled to be repeated a predetermined number of times simultaneously. In other words, Modification 10 is a pattern that combines Modifications 4 and 9, and therefore a detailed description thereof will be omitted. This makes it possible to remove particles that are not removed by a single shock wave of purge gas, and also makes it possible to shorten the cleaning time compared to Modification 9. Note that the series of valve opening/closing sequences of Modification 10 may be repeated as in Modification 6.

[Modification 11]
27 is a diagram showing an example of a valve opening and closing sequence in Modification 11. Modification 11 is a case in which the valve opening and closing sequence of the second embodiment is repeated in the same manner as Modification 6. As with Modification 6, Modification 11 does not limit the number of times a series of valve opening and closing sequences is repeated. If a particle monitor device is provided, even if the amount of particles does not fall below the reference value in one valve opening and closing sequence, the series of valve opening and closing sequences is repeated and terminated when the amount of particles falls below the reference value. If a particle monitor device is not provided, the series of valve opening and closing sequences may be repeated a predetermined number of times and then terminated.

[Modification 12]
FIG. 28 is a diagram showing an example of a valve opening and closing sequence in Modification 12. Modification 12 is a case in which the valve opening and closing sequence of Modification 4 is repeated in the same manner as Modification 11. As with Modification 11, Modification 12 does not limit the number of times the series of valve opening and closing sequences is repeated. If a particle monitor device is provided, even if the amount of particles does not fall below the reference value in one valve opening and closing sequence, the series of valve opening and closing sequences is repeated and terminated when the amount of particles falls below the reference value. If a particle monitor device is not provided, the series of valve opening and closing sequences may be repeated a predetermined number of times and then terminated. This allows the cleaning time to be shorter than in Modification 11.

In the second embodiment and variations 4 to 12 described above, the valve opening and closing sequences are controlled separately for the gas port 30 and the set of gas ports 33 and 38, but this is not limiting. For example, the gas port 30 and the set of gas ports 33 and 38 may be controlled to simultaneously supply purge gas for a predetermined period of time.

[Modification 13]
In the second embodiment and modified examples 4 to 12 described above, purge gas is supplied to gas port 30 via pipe 56 and valve 57, but it may also be supplied via pipe 59 and valve 62, and this embodiment will be described as modified example 13. Note that the substrate processing apparatus in modified example 13 is similar to substrate processing apparatus 1 of the second embodiment described above, and therefore, a description of the overlapping configuration and operation will be omitted.

Figure 29 is a diagram showing an example of a piping system to a vacuum transfer chamber in Modification 13. As shown in Figure 29, in Modification 13, unlike the second embodiment, piping 56 and valve 57 are not provided, and piping 58 is connected to regulator 55. Purge gas is supplied to gas port 30 via piping 59a via piping 59 and valve 62.

Figure 30 shows an example of a valve opening and closing sequence in variant 13. In Figure 30, the supply of purge gas to gas ports 30, 31, 32, 39, and 40 is simultaneously controlled by the corresponding valve 62. Gas ports 33-40 and corresponding valves 94a-94h are operated in pairs, with the opposite positions being used. Gas port 41 and valve 94i are not used in the valve opening and closing sequence shown in Figure 30. In Figure 30, the open state of a valve is represented as "open," and the closed state as "close."

When cleaning the VTM 11, the control device 100 first controls the valve 62 to supply purge gas for a predetermined time from the gas ports 30-32 located farthest from the exhaust port 42 of the VTM 11 and the gas ports 39 and 40 on the LLM 15 side. In this case, gas ports 30-32 correspond to the first gas ports. The predetermined time can be, for example, 1 to 5 seconds. The control device 100 may also clean the VTM 11 if a particle monitor (not shown) installed immediately after the valve 81 detects a particle count equal to or greater than a threshold.

The control device 100 then controls valves 94a and 94f to supply purge gas for a predetermined period of time from the second gas port pair, gas ports 33 and 38, which are located closer to the LLM 15 than gas port 30.

The control device 100 similarly supplies purge gas for a predetermined time from the gas port 30 side toward the exhaust port 42 side, sequentially through the pair of gas ports 34 and 37, the pair of gas ports 35 and 36, and the pair of gas ports 39 and 40. In other words, the control device 100 controls the opening and closing of the valves in the following order: the pair of valves 94b and 94e, the pair of valves 94c and 94d, and the pair of valves 94g and 94h. This generates a viscous flow of purge gas within the VTM 11 from the gas port 30 toward the exhaust port 42, allowing shock waves (physical vibrations) of the purge gas to be distributed throughout the entire VTM 11, even if the VTM 11 is large. Furthermore, by efficiently moving particles within the VTM 11 toward the exhaust port 42, the cleaning time for the VTM 11 can be shortened.

[Experimental Results]
Next, an experimental example of Modification 13 using a simulation will be described with reference to Fig. 31 to Fig. 35. Fig. 31 to Fig. 35 are diagrams showing an example of experimental results of Modification 13. Note that in Fig. 31 to Fig. 35, there are portions where the airflow extends outside the VTM 11, but this is just an expression in the simulation, and in reality the airflow does not extend outside the VTM 11.

Figure 31 shows the pressure distribution and flow of purge gas when purge gas is supplied from gas ports 30-32, 39, and 40 for a specified period of time. In this case, the flow of purge gas within the VTM 11 is uniform, and it can be seen that there is also a flow of purge gas near the surface where the PM 13 is connected.

Figure 32 shows the pressure distribution and flow of purge gas when purge gas is supplied for a predetermined period of time from the pair of gas ports 33 and 38. In this case, it can be seen that shock waves reach the wall surface of the VTM 11 near the gas ports 33 and 38, and the flow of purge gas toward the exhaust port 42 becomes stronger.

Figure 33 shows the pressure distribution and flow of purge gas when purge gas is supplied for a predetermined period of time from the pair of gas ports 34 and 37. In this case, it can be seen that a shock wave reaches the wall surface of the VTM 11 near the gas ports 34 and 37, and the purge gas does not flow toward the gas port 30, but instead flows toward the exhaust port 42.

Figure 34 shows the pressure distribution and flow of purge gas when purge gas is supplied for a predetermined period of time from the pair of gas ports 35, 36. In this case, it can be seen that a shock wave reaches the wall surface of the VTM 11 near the gas ports 35, 36, and the purge gas does not flow toward the gas port 30, but instead flows toward the exhaust port 42.

Figure 35 shows the pressure distribution and flow of purge gas when purge gas is supplied from a pair of gas ports 39, 40 for a predetermined period of time. In this case, a shock wave reaches the wall surface of the VTM 11 near gas ports 39, 40, and the purge gas spreads near the exhaust port 42, but does not flow much toward the gas port 30, and instead flows toward the exhaust port 42. In this way, by supplying purge gas in order from Figure 31 to Figure 35, the viscous flow of purge gas from gas port 30 toward the exhaust port 42 efficiently moves particles inside the VTM 11 toward the exhaust port 42 and is discharged.

[Variations of valve opening and closing sequences]
In the above-described embodiment, the purge gas supply sequences for the gas ports 30-32, 39, and 40, the gas ports 33 and 38, the gas ports 34 and 37, the gas ports 35 and 36, and the gas ports 39 and 40 are non-overlapping. However, partial overlap or simultaneous supply between two groups is also possible. These embodiments will be described as Modifications 14 to 22. In Modifications 14 to 22, the gas ports 30-32, 39, and 40 and the corresponding valves 62 are operated as a set. Furthermore, as in Modification 13, the gas ports 33-40 and the corresponding valves 94a-94h are operated as a set, with the valves positioned opposite each other. Furthermore, the gas port 41 and the valve 94i are not used in the valve opening and closing sequences shown in Modifications 14 to 22. The substrate processing apparatuses in Modifications 14 to 22 are similar to the substrate processing apparatus 1 in Modification 13, and therefore, descriptions of the overlapping configurations and operations will be omitted.

[Modification 14]
Fig. 36 is a diagram showing an example of a valve opening/closing sequence in Modification 14. In Modification 14 shown in Fig. 36, when cleaning the VTM 11, the control device 100 first controls the valve 62 so that purge gas is supplied for a predetermined time from the gas ports 30 to 32 located farthest from the exhaust port 42 of the VTM 11 and the gas ports 39 and 40 closest to the LLM 15.

The control device 100 then controls the valves 94a and 94f to supply purge gas from the pair of gas ports 33 and 38 for a predetermined period of time.

The control device 100 similarly controls the pair of valves 94b and 94e so that purge gas is supplied from the pair of gas ports 34 and 37 from the gas port 30 side toward the exhaust port 42 side for a predetermined period of time.

The control device 100 then synchronizes and controls the pair of valves 94c and 94d and the pair of valves 94g and 94h so that purge gas is simultaneously supplied to the pair of gas ports 35 and 36 and the pair of gas ports 39 and 40 for a predetermined period of time. This makes it possible to suppress the flow of purge gas from the pair of gas ports 39 and 40 toward gas port 30. Furthermore, the cleaning time can be shortened compared to variant 13.

[Modification 15]
Fig. 37 is a diagram showing an example of a valve opening/closing sequence in Modification 15. In Modification 15 shown in Fig. 37, when cleaning the VTM 11, the control device 100 first controls the valve 62 so that purge gas is supplied for a predetermined time from the gas ports 30 to 32 located farthest from the exhaust port 42 of the VTM 11 and the gas ports 39 and 40 closest to the LLM 15.

The control device 100 then controls the valves 94a and 94f to supply purge gas from the set of gas ports 33 and 38 for a predetermined time before the elapse of a predetermined time for the set of gas ports 30-32, 39, and 40. In other words, while purge gas is being supplied from the set of gas ports 30-32, 39, and 40, the supply of purge gas from the set of gas ports 33 and 38 begins.

The control device 100 then controls the pair of valves 94b and 94e so that purge gas is supplied from the pair of gas ports 34 and 37 for a predetermined time before the predetermined time has elapsed for the pair of gas ports 33 and 38. In other words, while purge gas is being supplied from the pair of gas ports 33 and 38, the supply of purge gas from the pair of gas ports 34 and 37 begins.

The control device 100 then controls the pair of valves 94c and 94d so that purge gas is supplied from the pair of gas ports 35 and 36 for a predetermined time before the elapse of a predetermined time for the pair of gas ports 34 and 37. In other words, while purge gas is being supplied from the pair of gas ports 34 and 37, the supply of purge gas from the pair of gas ports 35 and 36 begins.

The control device 100 then controls the pair of valves 94g and 94h to supply purge gas from the pair of gas ports 39 and 40 for a predetermined time before the predetermined time has elapsed for the pair of gas ports 35 and 36. In other words, while purge gas is being supplied from the pair of gas ports 35 and 36, the supply of purge gas from the pair of gas ports 39 and 40 begins. This allows the viscous flow to continue from the gas port 30 side toward the exhaust port 42 side, making it easier for particles to flow toward the exhaust port 42 and reducing the number of particles returning to the gas port 30 side. Furthermore, because the times at which purge gas is supplied overlap, the cleaning time can be further shortened.

[Modification 16]
38 is a diagram showing an example of a valve opening and closing sequence in Modification 16. Modification 16 shown in Fig. 38 is a case where the valve opening and closing sequence of Modification 15 is repeated. When cleaning the VTM 11, the control device 100 first controls the valve 62 so that purge gas is supplied for a predetermined time from the gas ports 30 to 32 located farthest from the exhaust port 42 of the VTM 11 and the gas ports 39 and 40 closest to the LLM 15.

The control device 100 controls the valves 94a and 94f to supply purge gas from the gas port pair 33 and 38 for a predetermined time before the predetermined time has elapsed for the gas port pairs 30-32, 39, and 40. In other words, while purge gas is being supplied from gas port 30, the control device 100 starts supplying purge gas from the gas port pair 33 and 38. As in Variation 15, the control device 100 then supplies purge gas from the gas port pair 33 and 38, the gas port pair 34 and 37, the gas port pair 35 and 36, and the gas port pair 39 and 40, overlapping each predetermined time.

When the control device 100 completes the supply of purge gas from the set of gas ports 39, 40 for a predetermined period of time, it resumes supplying purge gas from the set of gas ports 30-32, 39, 40, the set of gas ports 33, 38, the set of gas ports 34, 37, the set of gas ports 35, 36, and the set of gas ports 39, 40, with each supplying gas with a predetermined overlapping period. The number of times the valve opening and closing sequence from the set of gas ports 30-32, 39, 40 to the set of gas ports 39, 40 can be repeated is not limited. If a particle monitor device is provided, the valve opening and closing sequence is repeated even if the particle amount does not fall below the reference value in one valve opening and closing sequence, and is terminated when the particle amount falls below the reference value. If a particle monitor device is not provided, the valve opening and closing sequence may be repeated a predetermined number of times and then terminated.

[Modification 17]
FIG. 39 is a diagram showing an example of a valve opening/closing sequence in Modification 17. Modification 17 shown in FIG. 39 is a case where, among the valve opening/closing sequences of Modification 15, purge gas is controlled to be supplied simultaneously for a predetermined time to the pair of gas ports 35, 36 and the pair of gas ports 39, 40. In other words, Modification 17 is a pattern that combines Modifications 14 and 15, and therefore a detailed description thereof will be omitted. Modification 17 can suppress the flow of purge gas from the pair of gas ports 39, 40 toward gas port 30. Furthermore, Modification 17 can further shorten the cleaning time.

[Modification 18]
40 is a diagram showing an example of a valve opening and closing sequence in Modification 18. Modification 18 is a case in which the valve opening and closing sequence of Modification 17 is repeated in the same manner as Modification 16. As with Modification 16, Modification 18 does not limit the number of times a series of valve opening and closing sequences is repeated. If a particle monitor device is provided, even if the amount of particles does not fall below the reference value in one valve opening and closing sequence, the series of valve opening and closing sequences is repeated and terminated when the amount of particles falls below the reference value. If a particle monitor device is not provided, the series of valve opening and closing sequences may be repeated a predetermined number of times and then terminated.

[Modification 19]
41 is a diagram showing an example of a valve opening/closing sequence in Modification 19. In Modification 19 shown in Fig. 41, when cleaning the VTM 11, the control device 100 first controls the valve 62 to supply purge gas for a predetermined time from the gas ports 30-32 located farthest from the exhaust port 42 of the VTM 11 and the gas ports 39, 40 closest to the LLM 15. The control device 100 repeats the supply of purge gas for a predetermined time from the sets of gas ports 30-32, 39, 40 a predetermined number of times, for example, three times.

The control device 100 then controls the valves 94a and 94f to supply purge gas for a predetermined time from the pair of gas ports 33 and 38. The control device 100 repeats the supply of purge gas for a predetermined time from the pair of gas ports 33 and 38 a predetermined number of times, for example, three times.

The control device 100 repeats the supply of purge gas for a predetermined time a predetermined number of times, for example, three times, from the gas port 30 side toward the exhaust port 42 side, in the order of gas ports 34 and 37, gas ports 35 and 36, and gas ports 39 and 40. In other words, the control device 100 repeats valve opening and closing control a predetermined number of times in the order of valves 94b and 94e, valves 94c and 94d, and valves 94g and 94h. This allows particles that are not detached by a single purge gas shock wave to be detached. The series of valve opening and closing sequences of variant 19 may be repeated as in variant 16.

[Modification 20]
FIG. 42 is a diagram showing an example of a valve opening/closing sequence in Modification 20. Modification 20 shown in FIG. 42 is a case where, among the valve opening/closing sequence of Modification 19, the supply of purge gas for a predetermined time to the pair of gas ports 35 and 36 and the pair of gas ports 39 and 40 is controlled to be repeated a predetermined number of times simultaneously. In other words, Modification 20 is a pattern that combines Modifications 14 and 19, and therefore a detailed description thereof will be omitted. This makes it possible to remove particles that are not removed by a single shock wave of purge gas, and also makes it possible to shorten the cleaning time compared to Modification 19. Note that the series of valve opening/closing sequences of Modification 20 may be repeated as in Modification 16.

[Modification 21]
43 is a diagram showing an example of a valve opening and closing sequence in Modification 21. Modification 21 is a case in which the valve opening and closing sequence of Modification 13 is repeated in the same manner as Modification 16. As with Modification 16, Modification 21 does not limit the number of times a series of valve opening and closing sequences is repeated. If a particle monitor device is provided, even if the amount of particles does not fall below the reference value in one valve opening and closing sequence, the series of valve opening and closing sequences is repeated and terminated when the amount of particles falls below the reference value. If a particle monitor device is not provided, the series of valve opening and closing sequences may be repeated a predetermined number of times and then terminated.

[Modification 22]
FIG. 44 is a diagram showing an example of a valve opening and closing sequence in Modification 22. Modification 22 is a case in which the valve opening and closing sequence of Modification 14 is repeated in the same manner as Modification 21. As with Modification 21, Modification 22 does not limit the number of times the series of valve opening and closing sequences is repeated. If a particle monitor device is provided, even if the amount of particles does not fall below the reference value in one valve opening and closing sequence, the series of valve opening and closing sequences is repeated and terminated when the amount of particles falls below the reference value. If a particle monitor device is not provided, the series of valve opening and closing sequences may be repeated a predetermined number of times and then terminated. This allows the cleaning time to be shorter than in Modification 21.

While the second embodiment and variations 4 to 22 described above clean particles using the viscous flow and shock waves of purge gas, this is not limiting. For example, a high voltage may be applied to an electrode installed inside the robot arm 12, and the fork of the robot arm 12 may be brought close to the inner surface of the VTM 11 to generate an electrostatic field between the inner surface of the VTM 11 and the fork, thereby applying electrostatic stress, such as Maxwell stress, to the inner surface of the VTM 11. The applied high voltage may be, for example, high voltages of different polarities, such as +1 kV and -1 kV, applied alternately. The absolute value of the applied high voltage may be, for example, in the range of 1 kV to 5 kV. Instead of applying a high voltage of different polarity, the applied high voltage may be repeatedly turned on and off. This weakens the adhesive force of particles accumulated on the inner surface of the VTM 11, causing the particles to detach. That is, the control device 100 can remove particles that have accumulated at desired positions on the inner surface of the VTM 11 by moving the forks of the robot arm 12 to the desired positions. For example, when a series of valve opening and closing sequences is repeated as in Modifications 6, 11, 12, 16, 21, and 22, in the first sequence, the forks are moved in order to approach the inner surface of the VTM 11 near gas ports 33, 34, and 35 in synchronization with the supply of purge gas. In addition, in the second sequence, the forks are moved in order to approach the inner surface of the VTM 11 near gas ports 38, 37, and 36 in synchronization with the supply of purge gas. This improves the cleaning effect.

In addition, in the above-described modified examples 13 to 22, the valve opening and closing sequences were controlled separately for the set of gas ports 30-32, 39, and 40 and the set of gas ports 33 and 38, but this is not limiting. For example, the set of gas ports 30-32, 39, and 40 and the set of gas ports 33 and 38 may be controlled to simultaneously supply purge gas for a predetermined period of time.

As described above, according to the first embodiment, the substrate processing apparatus 1 includes a vacuum transfer chamber 11 having a top surface, a bottom surface facing the top surface, and side surfaces between the top surface and the bottom surface, the side surfaces being a first side surface and a second side surface facing the first side surface; a transfer robot (robot arm 12) disposed within the vacuum transfer chamber for transferring substrates (wafers); a load lock module 15 connected to the first side surface; piping (56, 58) connected to a purge gas supply source 54 for supplying purge gas into the vacuum transfer chamber 11; at least one gas port (30) provided on the top surface near the second side surface and connected to the piping; and at least one exhaust port 42 provided on the bottom surface near the first side surface of the vacuum transfer chamber 11 and connected to an exhaust pump for exhausting the purge gas supplied to the vacuum transfer chamber. As a result, gas stagnation is eliminated, thereby suppressing particle accumulation.

Furthermore, according to the first embodiment, the vicinity of the second side surface refers to the portion of the upper surface that is closest to the second side surface when the upper surface is divided into eight equal parts in that direction from the first side surface to the second side surface. As a result, gas stagnation can be eliminated, thereby suppressing the accumulation of particles.

Furthermore, according to the first embodiment, multiple gas ports are provided. As a result, gas stagnation is eliminated, thereby suppressing the accumulation of particles.

Furthermore, according to the first embodiment, gas ports (30-32, 39, 40) are further provided on the upper surface near the first side surface. As a result, gas stagnation is eliminated, thereby suppressing the accumulation of particles.

Furthermore, according to the first embodiment, gas ports are further provided at the connection portion of the first gate valve (16) provided between the load lock module 15 and the vacuum transfer chamber 11, and at the connection portion 14a of the second gate valve (14) provided between the vacuum transfer chamber 11 and the process module 13. As a result, accumulation of particles can be suppressed by eliminating stagnation of purge gas containing residual gas components.

According to the first embodiment, the piping includes a first piping (59) that supplies purge gas to each of the gas ports provided on the upper surface (39, 40) near the first side surface and the upper surface (30-32) near the second side surface via a first mass flow controller (MFC 60) that controls the flow rate of the purge gas; a second piping (63) that supplies purge gas to each of the gas ports (39-41) provided at the connection portion of the first gate valve via a second mass flow controller (MFC 64) that controls the flow rate of the purge gas; and a third piping (58) that supplies purge gas to each of the gas ports (33-38) provided at the connection portion 14a of the second gate valve via a third mass flow controller (MFC 68) that controls the flow rate of the purge gas. As a result, the flow of purge gas within the vacuum transfer chamber 11 is uniform, eliminating stagnation of purge gas containing residual gas components and suppressing particle accumulation.

Furthermore, according to the first embodiment, the first mass flow controller controls the flow rate to continuously supply purge gas when the vacuum transfer chamber 11 is idle or transferring a substrate, when the first gate valve is open, and when the second gate valve is open. As a result, the flow of purge gas within the vacuum transfer chamber 11 can be made uniform.

Furthermore, according to the first embodiment, the second mass flow controller controls the flow rate to stop the purge gas when the vacuum transfer chamber 11 is idle or transferring a substrate, and when the second gate valve is open, and controls the flow rate to stop the purge gas or supply it by ramp control when the first gate valve is open. As a result, the influence of the atmosphere on the load lock module 15 side can be reduced.

Furthermore, according to the first embodiment, the third mass flow controller controls the flow rate to stop the purge gas when the vacuum transfer chamber 11 is idle or transferring a substrate, and when the first gate valve is open, and controls the flow rate to supply the purge gas by ramp control when the second gate valve is open. As a result, it is possible to suppress turbulence in the airflow within the vacuum transfer chamber 11 and reduce the influence of the atmosphere on the process module 13 side.

Also, according to variant 1, the piping includes a first piping (59) that supplies purge gas to each of the gas ports provided on the top surface (39, 40) near the first side surface and the top surface (30-32) near the second side surface via a first mass flow controller (MFC60) that controls the flow rate of the purge gas, and a fourth piping (90) that supplies purge gas to each of the gas ports (33-41) provided at the connection portion of the first gate valve and the connection portion 14a of the second gate valve via a fourth mass flow controller (MFC91) that controls the flow rate of the purge gas. As a result, the flow of purge gas within the vacuum transfer chamber 11 is uniform, eliminating stagnation of purge gas containing residual gas components and suppressing particle accumulation. Furthermore, the piping system can be reduced compared to the above embodiment.

Furthermore, according to variant 1, the first mass flow controller controls the flow rate to continuously supply purge gas when the vacuum transfer chamber 11 is idle or transferring a substrate, when the first gate valve is open, and when the second gate valve is open. As a result, the flow of purge gas within the vacuum transfer chamber 11 can be made uniform.

Furthermore, according to variant 1, the fourth mass flow controller controls the flow rate to stop the purge gas when the vacuum transfer chamber 11 is idle or transferring a substrate, and controls the flow rate to supply the purge gas by ramp control when the first gate valve and the second gate valve are opened. As a result, it is possible to suppress turbulence in the airflow within the vacuum transfer chamber 11 and reduce the influence of the atmosphere on the process module 13 and load lock module 15 sides.

Also, according to the second modification, the piping includes a fifth piping (59) that supplies purge gas to each of the gas ports provided on the upper surface (39, 40) near the first side surface and the upper surface (30-32) near the second side surface via a first orifice (95) and a first valve (62) that control the flow rate of the purge gas, and a fourth piping (90) that supplies purge gas to each of the gas ports (33-41) provided at the connection portion of the first gate valve and the connection portion 14a of the second gate valve via a fourth mass flow controller (MFC91) that controls the flow rate of the purge gas. As a result, the flow of purge gas within the vacuum transfer chamber 11 is uniform, eliminating the accumulation of purge gas containing residual gas components and suppressing the accumulation of particles. Furthermore, the piping system can be reduced compared to the above embodiment. Furthermore, costs can be reduced compared to the first modification.

Furthermore, according to variant example 2, the first orifice and the first valve supply purge gas when the vacuum transfer chamber 11 is idle or transferring a substrate, when the first gate valve is open, and when the second gate valve is open. As a result, the flow of purge gas within the vacuum transfer chamber 11 can be made uniform.

Furthermore, according to variant 2, the fourth mass flow controller controls the flow rate to stop the purge gas when the vacuum transfer chamber 11 is idle or transferring a substrate, and controls the flow rate to supply the purge gas by ramp control when the first gate valve and the second gate valve are opened. As a result, it is possible to suppress turbulence in the airflow within the vacuum transfer chamber 11 and reduce the influence of the atmosphere on the process module 13 and load lock module 15 sides.

According to Variation 3, the piping includes a first piping (59) that supplies purge gas to each of the gas ports provided on the upper surface (39, 40) near the first side surface and the upper surface (30-32) near the second side surface via a first mass flow controller (MFC 60) that controls the flow rate of the purge gas, and a sixth piping (96) that supplies purge gas to each of the gas ports provided on the connection portion of the first gate valve and the connection portion of the second gate valve via second orifices (97a-97i) and second valves (94a-94i) that control the flow rate of the purge gas provided to each of the gas ports (33-41) provided on the connection portion of the first gate valve and the connection portion of the second gate valve 14a. As a result, the flow of purge gas within the vacuum transfer chamber 11 is uniform, eliminating stagnation of purge gas containing residual gas components and suppressing particle accumulation. Additionally, the piping system can be reduced compared to the above embodiment. Furthermore, costs can be reduced compared to variant 1.

Furthermore, according to variant example 3, the first mass flow controller controls the flow rate to continuously supply purge gas when the vacuum transfer chamber 11 is idle or transferring a substrate, when the first gate valve is open, and when the second gate valve is open. As a result, the flow of purge gas within the vacuum transfer chamber 11 can be made uniform.

Furthermore, according to variant example 3, the multiple second orifices and second valve control the flow rate to stop the purge gas when the vacuum transfer chamber 11 is idle or transferring a substrate, and continuously supply the purge gas when the first gate valve and the second gate valve are open. As a result, it is possible to suppress turbulence in the airflow within the vacuum transfer chamber 11 and reduce the influence of the atmosphere on the process module 13 and load lock module 15 sides.

In addition, according to the second embodiment, the vacuum transfer chamber has a top surface, a bottom surface facing the top surface, and side surfaces between the top surface and the bottom surface, and the side surfaces include a first side surface and a second side surface facing the first side surface. The control device 100 executes the following steps: a) evacuating the vacuum transfer chamber 11 through an exhaust port 42 provided on the bottom surface near the first side surface, while supplying purge gas for a predetermined time from a first gas port (30) on the top surface near the second side surface and located farthest from the exhaust port 42; and b) evacuating the vacuum transfer chamber 11 through the exhaust port 42, while supplying purge gas for a predetermined time from second gas ports (33-40) located closer to the first side surface than the first gas port. As a result, shock waves of the purge gas can be distributed throughout the vacuum transfer chamber 11, and the cleaning time of the vacuum transfer chamber 11 can be shortened.

The embodiments disclosed herein should be considered in all respects as illustrative and not restrictive. The above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

Furthermore, in each of the above-described embodiments, N2 gas is used as the purge gas, but this is not limited to this. For example, a rare gas such as He, Ne, or Ar gas may also be used as the inert gas.

The following additional notes are provided regarding each of the above embodiments.

(Supplementary Note 1) A method for cleaning a vacuum transfer chamber, comprising:
The vacuum transfer chamber includes:
a top surface, a bottom surface facing the top surface, and a side surface between the top surface and the bottom surface, the side surface including a first side surface and a second side surface facing the first side surface;
a) supplying a purge gas for a predetermined time from a first gas port located on the top surface near the second side surface and farthest from the exhaust port while exhausting the inside of the vacuum transfer chamber from an exhaust port located on the bottom surface near the first side surface;
b) supplying the purge gas for the predetermined time from a second gas port located closer to the first side surface than the first gas port while evacuating the inside of the vacuum transfer chamber from the exhaust port;
A method for cleaning a vacuum transfer chamber having the above structure.

(Supplementary Note 2) c) repeating steps a) and b);
2. The method for cleaning a vacuum transfer chamber according to claim 1,

(Supplementary Note 3) d) repeating step a) a predetermined number of times, and then repeating step b) the predetermined number of times;
2. The method for cleaning a vacuum transfer chamber according to claim 1,

(Additional Note 4) In the step b), the supply of the purge gas is started before the predetermined time in the step a) has elapsed.
3. A method for cleaning a vacuum transfer chamber according to claim 1 or 2.

(Supplementary Note 5) In the above a) and b), the exhaust from the exhaust port or the flow rate of the purge gas is controlled so that the pressure inside the vacuum transfer chamber becomes 133 Pa or more.
5. A method for cleaning a vacuum transfer chamber according to any one of claims 1 to 4.

(Supplementary Note 6) In the step b), when a plurality of second gas ports are provided facing the exhaust port side, the purge gas is supplied for the predetermined time in order from the second gas port on the second side surface side.
6. A method for cleaning a vacuum transfer chamber according to any one of claims 1 to 5.

(Supplementary Note 7) In the step b), the supply of the purge gas is started from the next second gas port before the predetermined time has elapsed from the second gas port to which the purge gas is currently being supplied.
7. A method for cleaning a vacuum transfer chamber according to claim 6.

(Supplementary Note 8) In the steps a) and b), a high voltage is applied to an electrode in a vacuum transfer robot provided in the vacuum transfer chamber for the predetermined time.
A method for cleaning a vacuum transfer chamber according to any one of appendices 1 to 7.

(Supplementary Note 9) The absolute value of the high voltage is in the range of 1 to 5 kV.
9. A method for cleaning a vacuum transfer chamber according to claim 8.

(Supplementary Note 10) e) When a particle detector provided in an exhaust line connected to the exhaust port detects a particle count equal to or greater than a threshold, the steps a) and b) are executed.
A method for cleaning a vacuum transfer chamber according to any one of appendices 1 to 9.

(Supplementary Note 11) A substrate processing apparatus,
a vacuum transfer chamber including a top surface, a bottom surface facing the top surface, and a side surface between the top surface and the bottom surface, the side surface including a first side surface and a second side surface facing the first side surface;
a control unit;
the control unit is configured to: a) control the substrate processing apparatus to exhaust the inside of the vacuum transfer chamber from an exhaust port provided in the bottom surface near the first side surface, while supplying a purge gas for a predetermined time from a first gas port that is provided in the top surface near the second side surface and is located farthest from the exhaust port;
the control unit is configured to: b) control the substrate processing apparatus so as to supply the purge gas from a second gas port located closer to the first side surface than the first gas port for the predetermined time while exhausting the inside of the vacuum transfer chamber from the exhaust port;
Substrate processing equipment.

1 Substrate processing apparatus 10 Apparatus main body 11 Vacuum transfer chamber (VTM)
12 Robot arm 13 Process module (PM)
14, 16 Gate valve 14a Connection part 15 Load lock module (LLM)
30 to 41 Gas ports 42 Exhaust port 54 Purge gas supply source 56, 58, 59, 63, 90, 96 Piping 60, 64, 68, 91 Mass flow controller (MFC)
57, 62, 94a to 94i Valves 95, 97a to 97i Orifices 100 Control device

Claims (20)

A substrate processing apparatus,
a vacuum transfer chamber having a top surface, a bottom surface opposite the top surface, and side surfaces between the top surface and the bottom surface, the side surfaces including a first side surface, a second side surface opposite the first side surface, and a pair of side surfaces disposed between the first side surface and the second side surface and opposing each other, wherein the top surface, the bottom surface, the first side surface, the second side surface, and the pair of side surfaces define a single space;
a transfer robot disposed in the vacuum transfer chamber and configured to transfer a substrate;
a load lock module disposed along the first side;
a first gate valve connecting the vacuum transfer chamber and the load lock module;
a plurality of second gate valves connecting a plurality of process modules arranged side by side along each of the pair of side surfaces to the vacuum transfer chamber;
a plurality of gas ports for supplying a purge gas into the vacuum transfer chamber;
a pipe connecting the plurality of gas ports to a purge gas supply source;
at least one exhaust port provided on the bottom surface of the vacuum transfer chamber near the first side surface, the exhaust port being connected to an exhaust pump that exhausts the purge gas supplied to the vacuum transfer chamber;
Equipped with
the plurality of gas ports include a gas port provided on the top surface near the second side surface or on the second side surface near the top surface, and gas ports provided at connection portions between the vacuum transfer chamber and the plurality of second gate valves, respectively.
Substrate processing equipment. The vicinity of the second side surface is the portion of the upper surface that is closest to the second side surface when the upper surface is divided into eight equal parts in the direction from the first side surface to the second side surface.
The substrate processing apparatus according to claim 1 . the plurality of gas ports includes a gas port provided on the top surface near a center of the second side surface;
The at least one exhaust port is provided in the bottom surface near a center of the first side surface.
The substrate processing apparatus according to claim 1 or 2. The plurality of gas ports are further provided on the top surface near the first side surface.
4. The substrate processing apparatus according to claim 1. The plurality of gas ports are further provided at a connection portion of the first gate valve.
5. The substrate processing apparatus according to claim 1. the plurality of gas ports are further provided on the top surface near the first side surface and on a connection portion of the first gate valve;
The piping is
a first pipe that supplies the purge gas to each of the plurality of gas ports provided on the top surface near the first side surface and on the top surface near the second side surface or on the second side surface near the top surface via a first mass flow controller that controls a flow rate of the purge gas;
a second pipe that supplies the purge gas to each of the plurality of gas ports provided at the connection portion of the first gate valve via a second mass flow controller that controls a flow rate of the purge gas;
a third pipe that supplies the purge gas to each of the plurality of gas ports provided at the connection portions of the plurality of second gate valves via a third mass flow controller that controls a flow rate of the purge gas;
4. The substrate processing apparatus according to claim 1 . the first mass flow controller controls the flow rate so as to continuously supply the purge gas when the vacuum transfer chamber is idle or transferring a substrate, when the first gate valve is opened, and when the second gate valve is opened.
The substrate processing apparatus according to claim 6 . The second mass flow controller comprises:
controlling the flow rate to stop the purge gas when the vacuum transfer chamber is in the idle state or during the transfer of the substrate and when the second gate valve is opened;
When the first gate valve is opened, the flow rate is controlled so that the purge gas is stopped or supplied at a ramp rate.
The substrate processing apparatus according to claim 7 . The third mass flow controller comprises:
controlling the flow rate to stop the purge gas when the vacuum transfer chamber is in the idle state or during the transfer of the substrate and when the first gate valve is opened;
When the second gate valve is opened, the flow rate is controlled so that the purge gas is supplied by ramp control.
The substrate processing apparatus according to claim 8 . the plurality of gas ports are further provided on the top surface near the first side surface and on a connection portion of the first gate valve;
The piping is
a first pipe that supplies the purge gas to each of the plurality of gas ports provided on the top surface near the first side surface and on the top surface near the second side surface or on the second side surface near the top surface via a first mass flow controller that controls a flow rate of the purge gas;
a fourth pipe that supplies the purge gas to each of the gas ports provided at the connection portion of the first gate valve and the connection portions of the plurality of second gate valves via a fourth mass flow controller that controls a flow rate of the purge gas;
4. The substrate processing apparatus according to claim 1 . The first mass flow controller comprises:
controlling the flow rate so that the purge gas is continuously supplied when the vacuum transfer chamber is idle or transferring a substrate, when the first gate valve is opened, and when the second gate valve is opened;
The substrate processing apparatus according to claim 10 . The fourth mass flow controller is
controlling the flow rate to stop the purge gas when the vacuum transfer chamber is in the idle state or during the transfer of the substrate;
controlling the flow rate so that the purge gas is supplied by ramp control when the first gate valve is opened and when the second gate valve is opened;
The substrate processing apparatus according to claim 11 . the plurality of gas ports are further provided on the top surface near the first side surface and on a connection portion of the first gate valve;
The piping is
a fifth pipe that supplies the purge gas to each of the plurality of gas ports provided on the top surface near the first side surface and on the top surface near the second side surface or on the second side surface near the top surface via a first orifice and a first valve that control a flow rate of the purge gas;
a fourth pipe that supplies the purge gas to each of the plurality of gas ports provided at the connection portion of the first gate valve and the connection portion of the second gate valve via a fourth mass flow controller that controls a flow rate of the purge gas;
4. The substrate processing apparatus according to claim 1 . The first orifice and the first valve include:
supplying the purge gas when the vacuum transfer chamber is in an idle state or is transferring a substrate, when the first gate valve is opened, and when the second gate valve is opened;
The substrate processing apparatus according to claim 13 . The fourth mass flow controller is
controlling the flow rate to stop the purge gas when the vacuum transfer chamber is in the idle state or during the transfer of the substrate;
controlling the flow rate so that the purge gas is supplied by ramp control when the first gate valve is opened and when the second gate valve is opened;
The substrate processing apparatus according to claim 14 . the plurality of gas ports are further provided on the top surface near the first side surface and on a connection portion of the first gate valve;
The piping is
a first pipe that supplies the purge gas to each of the plurality of gas ports provided on the top surface near the first side surface and on the top surface near the second side surface or on the second side surface near the top surface via a first mass flow controller that controls a flow rate of the purge gas;
and a sixth pipe that supplies the purge gas to each of the gas ports provided at the connection portion of the first gate valve and the connection portion of the second gate valve via a second orifice and a second valve that control a flow rate of the purge gas, the second orifice and a second valve being provided at each of the plurality of gas ports provided at the connection portion of the first gate valve and the connection portion of the second gate valve.
4. The substrate processing apparatus according to claim 1 . The first mass flow controller comprises:
controlling the flow rate so that the purge gas is continuously supplied when the vacuum transfer chamber is idle or transferring a substrate, when the first gate valve is opened, and when the second gate valve is opened;
The substrate processing apparatus of claim 16 . The plurality of second orifices and the second valve include:
controlling the flow rate to stop the purge gas when the vacuum transfer chamber is in the idle state or during the transfer of the substrate;
The purge gas is continuously supplied when the first gate valve is opened and when the second gate valve is opened.
The substrate processing apparatus of claim 17 . the second side surface is composed of two surfaces so that the vacuum transfer chamber has a pentagonal shape in a plan view.
The substrate processing apparatus according to any one of claims 1 to 17. A method for controlling a purge gas in a substrate processing apparatus, comprising:
The substrate processing apparatus includes:
a vacuum transfer chamber having a top surface, a bottom surface opposite the top surface, and side surfaces between the top surface and the bottom surface, the side surfaces including a first side surface, a second side surface opposite the first side surface, and a pair of side surfaces disposed between the first side surface and the second side surface and opposing each other, wherein the top surface, the bottom surface, the first side surface, the second side surface, and the pair of side surfaces define a single space;
a transfer robot disposed in the vacuum transfer chamber and configured to transfer a substrate;
a load lock module disposed along the first side;
a first gate valve connecting the vacuum transfer chamber and the load lock module;
a plurality of second gate valves for connecting a plurality of process modules arranged side by side along each of the pair of side surfaces to the vacuum transfer chamber;
a plurality of gas ports for supplying a purge gas into the vacuum transfer chamber;
a pipe connecting the plurality of gas ports to a purge gas supply source;
at least one exhaust port provided on the bottom surface of the vacuum transfer chamber near the first side surface, the exhaust port being connected to an exhaust pump that exhausts the purge gas supplied to the vacuum transfer chamber;
Equipped with
the plurality of gas ports include gas ports provided on the top surface near the second side surface or on the second side surface near the top surface, and gas ports provided at connection portions between the vacuum transfer chamber and the plurality of second gate valves,
The control method includes:
supplying a purge gas into the vacuum transfer chamber from the plurality of gas ports;
exhausting the purge gas supplied to the vacuum transfer chamber from the at least one exhaust port;
A method for controlling a purge gas, comprising: