JP7829836B2 - Distance measuring sensor - Google Patents
Distance measuring sensorInfo
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Description
本発明は、測距センサに係り、更に詳細には、光検出型の測距センサに関する。 This invention relates to a distance measuring sensor, and more particularly to an optical detection type distance measuring sensor.
先進運転支援システム（ＡＤＡＳ）や自動運転システムなどのシステムにおいては、自動車が走行する環境の情報を得る必要があり、そのようなセンサの１つに光検出型の測距センサがある。 Advanced driver-assistance systems (ADAS) and autonomous driving systems require information about the environment in which the vehicle is driving, and one such sensor is a light-detection type distance measuring sensor.
光検出型の測距センサは、照射したレーザ光が周辺環境内の物体で反射されて戻ってきた反射光を検出し、照射したレーザ光とその反射光との間の時間遅延から環境内の物体までの距離を検出するものである。 Optical detection type distance sensors detect the reflected light that returns after an emitted laser beam is reflected by objects in the surrounding environment. The distance to the object in the environment is then determined from the time delay between the emitted laser beam and the reflected light.
この光検出型の測距センサのスキャン方式は、現在のところ、可動部品による機械的なスキャン方式が主流であるが、この機械的なスキャン方式は、測距センサの小型化が困難であるのに加えて、振動にも弱いので、自動運転車などには利用し難い。 Currently, the dominant scanning method for optical distance measuring sensors is a mechanical scanning method using moving parts. However, this mechanical scanning method makes it difficult to miniaturize the distance measuring sensor and is also susceptible to vibration, making it unsuitable for applications such as autonomous vehicles.
特許文献１には、光の位相を変えて光の照射角度を変える光フェーズドアレイ（Ｏｐｔｉｃａｌ Ｐｈａｓｅｄ Ａｒｒａｙ：ＯＰＡ）を利用することで、機械的な機構によらずにスキャンできる測距センサが開示されている。 Patent Document 1 discloses a distance measuring sensor that can scan without a mechanical mechanism by utilizing an optical phased array (OPA), which changes the irradiation angle of light by changing the phase of light.
しかしながら、特許文献１に記載の測距センサは、光フェーズドアレイ集積回路を有する光送信機と光受信機とがプリント基板上に並んで設けられており、光送信機と光受信機とが別部品であるため、さらなる小型化が困難である。 However, the distance measuring sensor described in Patent Document 1 has an optical transmitter and optical receiver, both having optical phased array integrated circuits, mounted side-by-side on a printed circuit board. Since the optical transmitter and optical receiver are separate components, further miniaturization is difficult.
本発明は、このような従来技術の有する課題に鑑みてなされたものであり、その目的とするところは、さらなる小型化が可能な測距センサを提供することにある。 This invention has been made in view of the problems of the prior art, and its objective is to provide a distance measuring sensor that can be further miniaturized.
本発明者は、上記目的を達成すべく鋭意検討を重ねた結果、発光素子を島状に配置し、反射光が発光素子間を透過できるようにすることにより、発光素子と受光素子とを積層することが可能になり、上記目的が達成できることを見出し、本発明を完成するに至った。 The inventors, after diligent research to achieve the above objective, discovered that by arranging light-emitting elements in an island-like configuration and allowing reflected light to pass through the spaces between the light-emitting elements, it becomes possible to stack the light-emitting elements and light-receiving elements, thereby achieving the above objective. This led to the completion of the present invention.
即ち、本発明の測距センサは、受光素子と発光素子とを備える。
そして、上記発光素子が、上記受光素子上に島状に複数配置されており、
上記受光素子が、上記発光素子間を透過した、上記発光素子が出射した光の反射光を受光することを特徴とする。
In other words, the distance measuring sensor of the present invention comprises a light-receiving element and a light-emitting element.
Furthermore, multiple light-emitting elements are arranged in an island-like manner on the light-receiving element.
The above-mentioned light-receiving element is characterized by receiving reflected light from the light-emitting elements that has passed through the space between the light-emitting elements.
本発明によれば、発光素子を島状に複数配置し、反射光が発光素子間の隙間を透過できるようにしたため、発光素子と受光素子とを積層することができ、さらなる小型化が可能な測距センサを提供することができる。 According to the present invention, by arranging multiple light-emitting elements in an island-like configuration and allowing reflected light to pass through the gaps between the light-emitting elements, the light-emitting elements and light-receiving elements can be stacked, providing a distance measuring sensor that can be further miniaturized.
本発明の測距センサについて詳細に説明する。
本発明の測距センサは、図１に示すように、受光素子と発光素子とを備え、受光素子上に複数の発光素子が島状に配置されている。
そして、発光素子のそれぞれが、受光素子と発光素子との積層方向（図１の上方向）にコヒーレント光を出射し、環境中の物体で反射して戻ってきた反射光が上記発光素子間を透過し、この反射光を受光素子が受光することで物体までの距離を検出する。
The distance measuring sensor of the present invention will be described in detail.
As shown in Figure 1, the distance measuring sensor of the present invention comprises a light-receiving element and a light-emitting element, with a plurality of light-emitting elements arranged in an island-like configuration on the light-receiving element.
Each light-emitting element then emits coherent light in the stacking direction between the light-receiving element and the light-emitting element (upward direction in Figure 1). The reflected light, which is reflected by objects in the environment and returns, passes through the spaces between the light-emitting elements, and the light-receiving element receives this reflected light to detect the distance to the object.
このように、複数の発光素子を島状にすることにより、発光素子間を環境中の物体で反射した反射光が透過するため、発光素子を受光素子上に設けても、戻ってきた反射光を受光素子が受光できるので、発光素子と受光素子とを並べて配置する必要がなく、小型化が可能である。なお、図１、２は、発光素子間に設けられている透明な酸化膜を省略している。 In this way, by arranging multiple light-emitting elements in an island-like configuration, reflected light from objects in the environment passes through the spaces between the light-emitting elements. Therefore, even if the light-emitting elements are placed on a light-receiving element, the light-receiving element can receive the reflected light that returns. This eliminates the need to arrange the light-emitting and light-receiving elements side-by-side, enabling miniaturization. Note that Figures 1 and 2 omit the transparent oxide film provided between the light-emitting elements.
上記発光素子と受光素子とは、Ｐ型半導体とＮ型半導体とがＰＮ接合された半導体素子で形成され、上記発光素子は電圧を印加することで発光し、受光素子は光を受光することで電圧を生じるダイオードである。 The above-mentioned light-emitting element and light-receiving element are formed from semiconductor elements where a P-type semiconductor and an N-type semiconductor are joined in a PN junction. The light-emitting element emits light when a voltage is applied, and the light-receiving element is a diode that generates a voltage when it receives light.
具体的には、上記発光素子は、組成の異なる複数のＰ型, Ｎ型半導体もしくはアンドープの半導体を積層した発光層を、下部電極と上部の透明電極とで挟んだ構造の垂直共振器型面発光レーザー（ＶＣＳＥＬ）である。また、上記受光素子はＰ型半導体とＮ型半導体とを接合した構造をしており、Ｐ型半導体、Ｎ型半導体のそれぞれに電極が設けられ、受光により生じた電流を取り出す。 Specifically, the light-emitting element described above is a vertical-cavity surface-emitting laser (VCSEL) with a structure in which a light-emitting layer, made by stacking multiple P-type, N-type semiconductors or undoped semiconductors with different compositions, is sandwiched between a lower electrode and an upper transparent electrode. Furthermore, the photodetector has a structure in which a P-type semiconductor and an N-type semiconductor are joined, with electrodes provided on both the P-type and N-type semiconductors to extract the current generated by light reception.
上記ダイオードを構成する半導体材料としては、例えば、アルミニウムガリウムヒ素（ＡｌＧａＡｓ）、ガリウムヒ素リン（ＧａＡｓＰ）、インジウム窒化ガリウム、（ＩｎＧａＮ）、アルミニウム窒化ガリウム（ＡｌＧａＮ）など、従来からダイオードに用いられている公知の半導体材料を使用できるが、インジウムガリウムヒ素（ＩｎＧａＡｓ）やインジウムガリウムヒ素リン（ＩｎＧａＡｓＰ）は、波長が１．４μｍ以上のアイセーフなレーザ光を発光するので好ましく使用できる。 As the semiconductor material constituting the above diode, for example, known semiconductor materials conventionally used in diodes can be used, such as aluminum gallium arsenide (AlGaAs), gallium arsenide phosphate (GaAsP), indium gallium nitride (InGaN), and aluminum gallium nitride (AlGaN). However, indium gallium arsenide (InGaAs) and indium gallium arsenide phosphate (InGaAsP) are preferably used because they emit eye-safe laser light with a wavelength of 1.4 μm or longer.
なお、Ｐ型半導体は、最外殻の電子が少なく正孔を供給するドーパントを上記半導体材料に添加した半導体であり、Ｎ型半導体は、最外殻の電子が多く電子を供給するドーパントを上記半導体材料に添加した半導体である。 Furthermore, a P-type semiconductor is a semiconductor in which a dopant that supplies holes is added to the semiconductor material, while an N-type semiconductor is a semiconductor in which a dopant that supplies electrons is added to the semiconductor material, with a large number of electrons in its outermost shell.
また、発光素子の下部電極としては、上記半導体材料にＮ型のドーパントを大量にドープして伝導率を高めて金属的にした材料を使用することができる。このような材料であると、分子線エピタキシー法や、有機金属気相成長法（ＭＯＣＶＤ）を用いて測距センサを形成する際、ドーパントの種類や量を変えることで、発光素子と受光素子とを連続して形成することができる。上部の透明電極としては、酸化インジウムスズ（ＩＴＯ）などを使用できる。 Furthermore, as the lower electrode of the light-emitting element, a material can be used in which a large amount of N-type dopant has been doped into the semiconductor material to increase its conductivity and make it metallic. With such a material, when forming a distance sensor using molecular beam epitaxy or metal-organic vapor deposition (MOCVD), the light-emitting element and the light-receiving element can be formed continuously by changing the type and amount of dopant. For the upper transparent electrode, indium tin oxide (ITO) can be used.
上記発光素子が島状に存在する領域には、１つの受光素子が、測距センサの面内方向に連続して形成されていてもよく、また、複数の受光素子が測距センサの面内方向にマトリックス状に並んで配置されていてもよい。 In the region where the above-mentioned light-emitting elements are arranged in an island-like configuration, one light-receiving element may be continuously formed in the in-plane direction of the distance-measuring sensor, or multiple light-receiving elements may be arranged in a matrix in the in-plane direction of the distance-measuring sensor.
１つの大きな受光素子を、測距センサの面内方向に連続して形成することで、受光したときに生じる電流が面内で平均化されるので、ノイズ感度を低減でき、Ｓ／Ｎ比を大きくすることができる。また、複数の受光素子をマトリックス状に並べて配置することで、分割された箇所ごとの受光レベルを測定することが可能である。 By forming a single large photodetector continuously in the plane of the distance sensor, the current generated when light is received is averaged across the plane, thereby reducing noise sensitivity and increasing the signal-to-noise ratio. Furthermore, by arranging multiple photodetectors in a matrix, it becomes possible to measure the light reception level at each divided location.
上記受光素子が形成される領域は、島状に配置された発光素子の存在領域と同じであってもよく、上記発光素子の存在領域に加えて上記存在領域の外側にも形成されていてもよい。 The region where the above-mentioned light-receiving element is formed may be the same as the region where the island-shaped light-emitting elements are located, or it may be formed outside the region where the light-emitting elements are located, in addition to the region where the light-receiving elements are located.
受光素子の形成領域を発光素子の存在領域と同じにすることにより、測距センサの大きさを発光素子の存在領域にあわせて小型化することが可能である。また、受光素子の形成領域は発光素子の存在領域よりも大きく、該存在領域の外側にも受光素子が形成されていると、受光面積が増大して受光量が多くなるので、測距精度が向上する。 By making the region where the light-receiving element is formed the same as the region where the light-emitting element is located, it is possible to miniaturize the distance measuring sensor to match the size of the region where the light-emitting element is located. Furthermore, if the region where the light-receiving element is formed is larger than the region where the light-emitting element is located, and light-receiving elements are also formed outside this region, the light-receiving area increases, resulting in a greater amount of light received and thus improving distance measurement accuracy.
上記受光素子は、図１に示すように、絶縁性の基板上にＮ型半導体とＰ型半導体を積層して形成してもよい。この場合、Ｐ型半導体層とＮ型半導体層のそれぞれの端部に電極が設けられる。 The above-mentioned light-receiving element may be formed by laminating an N-type semiconductor and a P-type semiconductor on an insulating substrate, as shown in Figure 1. In this case, electrodes are provided at the ends of both the P-type semiconductor layer and the N-type semiconductor layer.
積抵抗率が１０７Ωｃｍ以上の絶縁性の基板を用いることで、受光素子と発光素子とを制御する回路などの他の機能を有する回路を、受光素子及び発光素子と同一の基板上に形成することができる。 By using an insulating substrate with a resistivity of 10⁷ Ωcm or more, circuits with other functions, such as circuits for controlling the light-receiving element and the light-emitting element, can be formed on the same substrate as the light-receiving element and the light-emitting element.
上記絶縁体としては、従来から回路基板として用いられている材料の他、上記半導体材料を含有する絶縁体を使用できる。 As the above-mentioned insulator, in addition to materials conventionally used as circuit boards, insulators containing the above-mentioned semiconductor material can be used.
また、上記受光素子は、図２に示すように、Ｎ型半導体の基板の表面に、Ｐ型半導体が格子状に部分的にドープされて形成され、基板が受光素子を兼ねていてもよい。
なお、Ｎ型半導体とＰ型半導体が逆であってもよい。
Furthermore, as shown in Figure 2, the above-mentioned light-receiving element may be formed by partially doping a P-type semiconductor in a grid pattern onto the surface of an N-type semiconductor substrate, and the substrate may also serve as the light-receiving element.
Note that the N-type and P-type semiconductors can be reversed.
測距センサの基板に体積抵抗率が１～１０ΩｃｍであるＮ型半導体を用いることで、基板の裏面など、加工を行っていない部位に電極を設けることができる。具体的には、Ｎ型半導体の基板の裏側に裏面電極を設け、また、上側のＰ型半導体を発光素子の存在領域の端部まで引き回し、その端部に電極を設けることができ、加工工程を削減できると共に、測距センサの小型化が可能である。 By using an N-type semiconductor with a volume resistivity of 1 to 10 Ωcm for the distance measuring sensor substrate, electrodes can be provided on unprocessed areas such as the back surface of the substrate. Specifically, back-side electrodes can be provided on the back of the N-type semiconductor substrate, and the upper P-type semiconductor can be routed to the edge of the light-emitting region, with electrodes provided at that edge. This reduces the processing steps and enables miniaturization of the distance measuring sensor.
上記基板に用いる半導体としては、Ｎ－ＧａＡｓやＰ－ＧａＡｓを挙げることができる。 Examples of semiconductors used in the above-mentioned substrate include N-GaAs and P-GaAs.
上記発光素子は、図３に示すように、それぞれ位相変調器を有することができる。上記位相変調器により、その積層方向に発光素子が発光した光を偏向させ、照射方向を変えて環境中をスキャンすることが可能になる。 As shown in Figure 3, each of the above-mentioned light-emitting elements can have a phase modulator. This phase modulator allows the light emitted by the light-emitting elements to be deflected in the stacking direction, enabling the light to be scanned in the environment by changing the irradiation direction.
位相変調器は、屈折率が変化する変調部を２つの透明電極で上下から挟持し、変調部の側面には、横方向への光の漏れを防止する遮光壁が設けられた構造をしている。上記透明電極は、例えば、上側がＹ軸走査用電極であり、下側がＸ軸走査用電極であり得る。
なお、図３では、位相変調器のＹ軸走査用電極及びＸ軸走査用電極が配置されていない部分に受光素子を示しているが、実際には受光素子上に透明な酸化膜が形成されている。
The phase modulator has a structure in which a modulation section with a changing refractive index is sandwiched from above and below by two transparent electrodes, and light-shielding walls are provided on the sides of the modulation section to prevent light leakage in the lateral direction. The transparent electrodes may, for example, have an upper electrode for Y-axis scanning and a lower electrode for X-axis scanning.
Note that in Figure 3, the photodetector is shown in the area where the Y-axis scanning electrodes and X-axis scanning electrodes of the phase modulator are not located; however, in reality, a transparent oxide film is formed on the photodetector.
上記位相変調器は、光フェーズドアレイとして動作するものであり、変調部の屈折率を変化させることで、発光素子がその積層方向に発光した光の位相を変調し、光の回折と干渉によって、機械的な可動部なしに出射光の形状と方向を制御する。 The above phase modulator operates as an optical phased array. By changing the refractive index of the modulation section, it modulates the phase of the light emitted in the stacking direction of the light-emitting elements. Through diffraction and interference of light, it controls the shape and direction of the emitted light without any mechanically moving parts.
具体的には、上記発光素子をマトリックス状に等間隔で配置し、これらの発光素子それぞれに位相変調器を設けて光フェーズドアレイを形成し、それぞれの位相変調部器に異なる電圧を印加して変調部の屈折率を変化させる。 Specifically, the above-mentioned light-emitting elements are arranged in a matrix at equal intervals, and a phase modulator is provided on each of these light-emitting elements to form an optical phased array. Different voltages are then applied to each phase modulator to change the refractive index of the modulation section.
各位相変調器は、遮光壁によって光路が隔てられているので、各発光素子から出射した光は位相変調器を透過するまで干渉し合うことはなく、発光素子からのコヒーレントな出射光が位相変調器を透過し、それぞれの電圧に応じた位相に変調される。 Each phase modulator is separated by a light-shielding wall, so the light emitted from each light-emitting element does not interfere with each other until it passes through the phase modulator. The coherent light emitted from the light-emitting elements passes through the phase modulator and is modulated to the phase corresponding to their respective voltages.
各位相変調器で変調された出射光は、位相変調器を透過した後に合成され、この合成された出射光は、位相差に対応した角度で回折、偏向するので、出射光の形状と方向を変えることができる。 The emitted light modulated by each phase modulator is combined after passing through the modulators. This combined emitted light is diffracted and deflected at an angle corresponding to the phase difference, thus changing the shape and direction of the emitted light.
光フェーズドアレイは、アレイピッチが狭いほど高角度に偏向できることから、隣接する発光素子の間隔は、出射光同士が十分干渉するように、発光素子が発光する光の波長以下であることが好ましい。 Since a phased optical array can be deflected at a higher angle the narrower the array pitch, it is preferable that the spacing between adjacent light-emitting elements be less than or equal to the wavelength of the light emitted by each element, so that the emitted light interferes sufficiently with each other.
変調部を構成する、印加する電圧により屈折率が変化する材料としては、電気光学ポリマー（ＥＯポリマー）、有機非線形光学結晶（ＤＡＳＴ）、ＬｉＮｂＯ３、ＬｉＴａＯ３などを挙げることができる。 Examples of materials that constitute the modulation section and whose refractive index changes depending on the applied voltage include electro-optic polymers (EO polymers), organic nonlinear optical crystals (DAST), LiNbO3 , and LiTaO3 .
なかでもＥＯポリマーは低誘電率であり、透明電極をＥＯポリマーの上下に配置し、ＥＯポリマーを透明電極で挟持した構造にできることから、低電圧で駆動可能であるのに加えて、加工が容易であり、遮光壁を設けて横方向への出射光の漏れを防止することが容易であり、好ましく使用できる。 In particular, EO polymers have a low dielectric constant, and because they can be constructed by placing transparent electrodes above and below the EO polymer, sandwiching the EO polymer between the transparent electrodes, they can be driven at low voltages. Furthermore, they are easy to process, and it is easy to prevent lateral light leakage by providing a light-shielding wall, making them a preferred choice.
上記遮光壁には、不透明である材料を使用でき、例えば、クロムやニッケルモリブデンなどを使用することができる。 The above-mentioned light-blocking wall can be made of an opaque material, such as chromium or nickel-molybdenum.
次に、上記測距センサの製造方法について説明する。
本発明の測距センサの製造方法を、半導体がＧａＩｎＡｓである場合を例に説明する。
Next, the manufacturing method of the distance measuring sensor described above will be explained.
The method for manufacturing the distance measuring sensor of the present invention will be explained using the case where the semiconductor is GaInAs as an example.
図４の（ａ）に示すように、絶縁性基板上に、分子線エピタキシー法や有機金属気相成長法によって、Ｎ－ＧａＩｎＡｓ薄膜とＰ－ＧａＩｎＡｓ薄膜とを積層し、ｐｎ接合を形成させて受光素子を作製する。 As shown in Figure 4(a), an N-GaInAs thin film and a P-GaInAs thin film are layered on an insulating substrate using molecular beam epitaxy or metal-organic vapor deposition to form a pn junction and fabricate a photodetector.
次に、上記受光素子上に、ＧａＩｎＡｓをエピタキシャル成長可能な分だけ成長させてバッファ層を形成し、さらにＮ型のドーパントを多量にドープして金属的なｎ＋ＧａＩｎＡｓを形成し、この部分を下部電極とし、その上に発光層を形成して発光素子を作製する。
なお、受光素子から発光層までは、ドーパントを変えることで連続して形成できる。
Next, GaInAs is grown epitaxially on the photodetector to form a buffer layer, and then a large amount of N-type dopant is doped to form metallic n+GaInAs. This portion is used as the lower electrode, and a light-emitting layer is formed on top of it to fabricate a light-emitting element.
Furthermore, the light-receiving element and the light-emitting layer can be formed continuously by changing the dopant.
この発光層の上に、電子ビーム蒸着法やスパッタ法により、酸化インジウムスズ（ＩＴＯ）を全面に成膜し、透明電極を成膜する。 On this light-emitting layer, indium tin oxide (ITO) is deposited across the entire surface using electron beam deposition or sputtering to form a transparent electrode.
そして、図４の（ｂ）に示すように、島状にマスクし、ドライエッチングによって下部電極から上の部分を島状に削り取って発光素子間に隙間を形成し、この隙間を埋めるように酸化ケイ素、アルミナ、ジルコニアなどの酸化膜を全面に成膜する。 Then, as shown in Figure 4(b), the area is masked in an island shape, and the portion above the lower electrode is removed in an island shape by dry etching to create gaps between the light-emitting elements. An oxide film of silicon dioxide, alumina, zirconia, or similar material is then deposited over the entire surface to fill these gaps.
位相変調器を設ける場合は、図４の（ｃ）に示すように、酸化インジウムスズ（ＩＴＯ）を成膜し、マスク材で位相変調器の形状にパターニングしてドライエッチングによって発光素子の上をＸ軸方向に延びるＸ軸走査用電極の形状に成形する。このＸ軸走査用電極上に島状の変調部を形成する。変調部は、有機ＥＯポリマーを成膜してマスク材で島状にパターニングし、ドライエッチングすることで形成できる。 When a phase modulator is provided, as shown in Figure 4(c), an indium tin oxide (ITO) film is deposited, patterned with a mask material to form the shape of the phase modulator, and then dry-etched to form the shape of an X-axis scanning electrode extending in the X-axis direction on the light-emitting element. Island-shaped modulation sections are then formed on these X-axis scanning electrodes. These modulation sections can be formed by depositing an organic EO polymer film, patterning it into island shapes with a mask material, and then dry-etching it.
次に、図４の（ｄ）に示すように、上記変調部を覆うように、該変調部の上面、側面及び変調部間のすべてに酸化膜を形成し、さらに、図４の（ｅ）に示すように、クロムなど不透明材料を用いて同様に遮光壁を形成する。 Next, as shown in Figure 4(d), an oxide film is formed on the top surface, sides, and all areas between the modulation sections so as to cover the modulation section. Furthermore, as shown in Figure 4(e), a light-shielding wall is similarly formed using an opaque material such as chromium.
そして、図４の（ｆ）に示すように、変調部をマスクして変調部が存在しない変調部間を、ドライエッチングによってＸ軸走査用電極よりも上の部分を島状に削り取って発光素子間に隙間を形成し、この隙間を埋めるように表面全体を酸化膜で被覆する。 Then, as shown in Figure 4(f), the modulation section is masked, and the areas between the modulation sections where no modulation is present are removed in island-like sections by dry etching, creating gaps between the light-emitting elements. The entire surface is then coated with an oxide film to fill these gaps.
この酸化膜に上記変調部との接点を取るコンタクトホールを形成し、ここに酸化インジウムスズ（ＩＴＯ）を配置してＹ軸方向に延びるＹ軸走査用電極を形成する。 Contact holes are formed in this oxide film to create contact with the modulation section, and indium tin oxide (ITO) is placed in these holes to form a Y-axis scanning electrode extending in the Y-axis direction.
最後に、図４の（ｇ）に示すように各電極層との接点を取るコンタクトホールを形成し、ここに電極材料を蒸着することで測距センサを作製できる。 Finally, as shown in Figure 4(g), contact holes are formed to create contact points with each electrode layer, and the electrode material is deposited into these holes to fabricate the distance measuring sensor.
上記のように、受光素子上に発光素子を積層して測距センサを作製すれば、測距センサを小型化できるだけでなく、受光素子と発光素子との精緻な位置決めが必要ないので、生産性が向上すると共に、受光素子と発光素子との位置ずれの問題が生じないため測距精度が向上する。 As described above, by fabricating a distance measuring sensor by stacking light-emitting elements on a light-receiving element, not only can the distance measuring sensor be miniaturized, but the precise positioning of the light-receiving element and the light-emitting element is not required, thus improving productivity. Furthermore, the problem of misalignment between the light-receiving element and the light-emitting element is eliminated, resulting in improved distance measuring accuracy.
１ 測距センサ
２ 受光素子
２１ Ｎ型半導体
２２ Ｐ型半導体
２３ 電極
２４ Ｎ型半導体基板
２５ 裏面電極
３ 発光素子
３１ 下部電極（バッファー層）
３２ 発光層
３３ 透明電極
４ 位相変調器
４１ Ｘ軸走査用電極
４２ 変調部
４３ Ｙ軸走査用電極
４４ 遮光壁
５ 酸化膜
６ 基板
1 Distance sensor 2 Light-receiving element 21 N-type semiconductor 22 P-type semiconductor 23 Electrode 24 N-type semiconductor substrate 25 Back electrode 3 Light-emitting element 31 Bottom electrode (buffer layer)
32 Light-emitting layer 33 Transparent electrode 4 Phase modulator 41 X-axis scanning electrode 42 Modulation unit 43 Y-axis scanning electrode 44 Light-shielding wall 5 Oxide film 6 Substrate
Claims (11)
上記発光素子が、上記受光素子上に島状に複数配置されており、
上記受光素子が、上記発光素子間を透過した、上記発光素子が出射した光の反射光を受光することを特徴とする測距センサ。 A distance measuring sensor comprising a light-receiving element and a light-emitting element,
Multiple of the above-mentioned light-emitting elements are arranged in an island-like manner on the above-mentioned light-receiving element.
A distance measuring sensor characterized in that the light-receiving element receives reflected light emitted by the light-emitting elements that has passed through the space between the light-emitting elements.
さらに、上記発光素子上に位相変調器を有し、
上記位相変調器が、上記発光素子が出射した光の位相を変調し、光の回折と干渉によって光の照射方向を変えることを特徴とする請求項１に記載の測距センサ。 The above-mentioned light-emitting elements are arranged in a matrix at equal intervals,
Furthermore, the above-mentioned light-emitting element has a phase modulator,
The distance measuring sensor according to claim 1, characterized in that the phase modulator modulates the phase of light emitted by the light-emitting element and changes the direction of light irradiation by diffraction and interference of light.
上記基板の体積抵抗率が１０７Ωｃｍ以上であることを特徴とする特徴とする請求項１～７のいずれか１つの項に記載の測距センサ。 The above light-receiving elements are stacked on a substrate,
The distance measuring sensor according to any one of claims 1 to 7, characterized in that the volume resistivity of the above substrate is 10⁷ Ωcm or more.
上記基板の体積抵抗率が１～１０Ωｃｍであることを特徴とする特徴とする請求項１～７のいずれか１つの項に記載の測距センサ。 The above-mentioned light-receiving element is formed by partially doping a P-type semiconductor in a grid pattern onto the surface of a substrate made of an N-type semiconductor.
The distance measuring sensor according to any one of claims 1 to 7, characterized in that the volume resistivity of the above substrate is 1 to 10 Ωcm.
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