JP7846752B2 - Wafer processing apparatus, semiconductor chip manufacturing method and semiconductor chip - Google Patents

Description

This invention relates to a wafer processing apparatus, a method for manufacturing a semiconductor chip, and a semiconductor chip, and more particularly to a wafer processing apparatus for processing a wafer on which a plurality of semiconductor chips are formed, a method for manufacturing a semiconductor chip, and a semiconductor chip.

Conventionally, wafer processing apparatuses are known for processing wafers on which multiple semiconductor chips are formed. Such a wafer processing apparatus is disclosed, for example, in Japanese Patent Publication No. 6904368.

Japanese Patent Publication No. 6904368 discloses a semiconductor substrate processing apparatus (wafer processing apparatus) for processing a semiconductor substrate (wafer) on which multiple integrated circuit chips are formed. This semiconductor substrate processing apparatus includes various modules such as a coating module for coating DAF (Die Attach Film) onto the semiconductor substrate, a dicing tape application module for attaching dicing tape to the semiconductor substrate, and a dicing module for dicing the semiconductor substrate. In this semiconductor substrate processing apparatus, the semiconductor substrate is processed sequentially by the various modules.

Patent No. 6904368

Although not explicitly stated in the aforementioned Japanese Patent Publication No. 6904368, in a semiconductor substrate processing apparatus like the one described in Patent Publication No. 6904368, the cycle time for each process (each module) differs depending on the product, which is a processed semiconductor substrate. Furthermore, there are cases where users want to change the length of unattended operation time, such as increasing the length of unattended operation time during nighttime hours when there are fewer workers. Thus, because the optimal equipment configuration differs depending on the product and user requirements, there is a problem in that it is difficult to construct an optimal equipment configuration.

This invention was made to solve the above-mentioned problems, and one of its objectives is to provide a wafer processing apparatus, a semiconductor chip manufacturing method, and a semiconductor chip that enable the construction of an optimal equipment configuration.

To achieve the above objective, a wafer processing apparatus according to the first aspect of this invention comprises a module selected from a plurality of modules that perform different types of processing on a wafer on which a plurality of semiconductor chips are formed, the number of each of the plurality of modules is changeable, and further comprises a common wafer transport unit that transports wafers between the plurality of selected modules selected from the plurality of modules, the plurality of selected modules are connected along a predetermined direction, the wafer transport unit is capable of transporting work-in-progress wafers that have not been processed by any of the plurality of selected modules in both one direction and the other direction of the predetermined direction, the selected modules include a wafer supply module that supplies wafers, and the wafer supply module also serves as a work-in-progress storage unit for storing the work-in-progress wafers .

In the wafer processing apparatus according to the first aspect of this invention, as described above, the number of each of the multiple modules can be changed. As a result, since the number of each of the multiple modules can be changed, for example, if the cycle time of each process differs for each wafer processed product, the equipment configuration can be changed according to the cycle time of each process for each product. Also, if a user wants to change the length of unattended operation time, for example, to increase the length of unattended operation time at night when there are fewer workers, the equipment configuration can be changed according to the user's request. As a result, even when the optimal equipment configuration differs depending on the product and the user's request, the optimal equipment configuration can be constructed.
Furthermore, when wafers are processed using multiple selection modules, the selection module with the longest cycle time becomes the production bottleneck. In this case, production stagnates due to the bottleneck selection module, reducing the equipment utilization rate. Therefore, as described above, if the wafer transport unit is configured to be able to transport work-in-progress wafers, the wafer transport unit can move the work-in-progress wafers, allowing production to continue. As a result, production stagnation caused by the bottleneck selection module can be suppressed, and the equipment utilization rate can be improved.
Furthermore, since work-in-progress wafers can be stored in the work-in-progress storage section, production can be easily continued. As a result, production stagnation caused by the selection module, which is a production bottleneck, can be easily suppressed, and the equipment utilization rate can be easily improved.
Furthermore, by effectively utilizing the wafer supply module, work-in-progress wafers can be stored, which, unlike when only a dedicated work-in-progress storage unit is provided, can improve the equipment's operating rate while suppressing the complexity of the equipment configuration.

In the wafer processing apparatus according to the first aspect described above, preferably , the wafer transport unit is capable of transporting work-in-progress wafers that have not yet been processed by any of the multiple selection modules in both directions within a predetermined direction and the other direction between the multiple selection modules. With this configuration, the wafer transport unit can move the work-in-progress wafers, thus allowing production to continue. As a result, it is possible to suppress production stagnation caused by selection modules that become production bottlenecks, thereby improving the operating rate of the equipment.

In the wafer processing apparatus in the first phase described above, preferably, the apparatus further includes a control unit that controls the operation of the wafer transport unit, and the control unit is configured to control the wafer transport unit so that if the next wafer in work-in-progress cannot be transported to a predetermined selection module because a wafer in work-in-progress is being processed in one of the plurality of selection modules, the next wafer in work-in-progress that cannot be transported is transported to the work-in-progress storage unit. With this configuration, if the predetermined selection module becomes a production bottleneck, the next wafer in work-in-progress that cannot be transported to the predetermined selection module can be moved to the work-in-progress storage unit, thus easily suppressing production stagnation caused by the predetermined selection module that becomes a production bottleneck. As a result, the operating rate of the equipment can be easily improved.

In this case, preferably, the system is configured to process multiple types of wafers. The control unit sequentially transports work-in-progress wafers of a predetermined type from among the multiple types of wafers to the work-in-progress storage unit. When processing of a predetermined number of wafers of a predetermined type by a selection module upstream of a predetermined selection module is completed, the control unit is configured to transport the next type of wafer of the predetermined type to the upstream selection module and start processing of the next type of wafer. This configuration prevents production from stalling for the next type of wafer due to a bottleneck in the predetermined type of wafer. As a result, the operating rate of the equipment can be improved when processing multiple types of wafers.

In the wafer processing apparatus according to the first aspect described above, it is preferably configured to process multiple types of wafers, and it is possible to specify which of the processing methods of multiple selection modules to use for each of the multiple types of wafers, and it is possible to process multiple types of wafers in parallel using multiple selection modules. With this configuration, if the same type of wafer is assigned to all of the multiple selection modules, the multiple selection modules can function as a line-type system that executes processing on the wafers sequentially. If different types of wafers are assigned to each of the multiple selection modules, each of the multiple selection modules can function as a standalone system that executes processing on the wafers independently. Furthermore, the multiple selection modules can function as a system that combines line-type and standalone systems. As a result, the user can configure the multiple selection modules to function as a system suitable for the production plan, among line-type systems, standalone systems, and systems that combine line-type and standalone systems. Line-type systems are suitable for wafers that are processed frequently. Standalone systems are suitable for wafers that are not processed frequently (such as rare types of wafers or small-lot wafers).

In this case, preferably, by specifying which of the multiple selection module processes to perform for each of the multiple types of wafers, it is possible to operate at least one of the multiple selection modules independently. With this configuration, at least one of the multiple selection modules can easily function as a standalone device.

In the wafer processing apparatus according to the first aspect described above, preferably, the plurality of modules include at least one of the following: a dicing module for dicing wafers; an expand module for expanding a dicing sheet member to which wafers are attached; an ablation laser module for laser ablation of wafers; a cleaning module for cleaning wafers; a grinding module for grinding wafers; a backgrind sheet member attachment module for attaching a backgrind sheet member to a wafer; a polishing module for polishing wafers; and a frame mount module for attaching a dicing sheet member to a wafer and mounting the wafer to a frame. With this configuration, the number of at least one of the dicing module, expand module, wafer supply module, ablation laser module, cleaning module, grinding module, backgrind sheet member attachment module, polishing module, and frame mount module can be changed according to the product and user requirements.

In the wafer processing apparatus according to the first aspect described above, it is preferable that two or more modules of the same type can be arranged. With this configuration, the processing capacity of the two or more modules can be increased by arranging two or more modules of the same type, so that when the processing cycle time of the two or more modules is large, the imbalance in the size of the cycle time can be easily adjusted.

In this case, preferably, modules of the same type can be placed on one side and the other side, with modules of other types in between. This configuration improves the flexibility of module placement compared to cases where modules of the same type can only be placed adjacent to each other.

In the wafer processing apparatus according to the first aspect described above, preferably, the modules are connected along a predetermined direction. With this configuration, since the modules are connected along a predetermined direction, it is possible to suppress the enlargement of the apparatus in directions other than the predetermined direction.

In the configuration comprising the wafer transport section described above, preferably, the wafer transport section can change its length in a predetermined direction according to the number of modules selected from among a plurality of modules and connected along that predetermined direction. With this configuration, the length of the wafer transport section can be appropriately changed according to an increase or decrease in the number of modules, making it easy to realize a configuration in which a common wafer transport section is provided among multiple modules.

In the wafer processing apparatus according to the first aspect described above, preferably, the module includes a dicing module for dicing wafers and an expand module for expanding a dicing sheet member to which wafers are attached. The first wafer to be diced and the second wafer to be expanded are supplied independently to the dicing module and the expand module, respectively, and the dicing of the first wafer by the dicing module and the expansion of the dicing sheet member of the second wafer by the expand module are performed independently and in parallel. With this configuration, even if the cycle time for dicing and the cycle time for expanding are completely different, dicing and expanding can be performed smoothly without causing any downtime.

In the wafer processing apparatus according to the first aspect described above, preferably, the module includes a dicing module for dicing a wafer, the dicing module has an imaging unit for imaging the wafer, and the dicing module is configured such that, when repeatedly performing laser processing on a street from one side of the wafer and then performing laser processing on a street from the other side of the wafer, the imaging unit images the wafer, the amount of street displacement due to laser processing is obtained based on the imaging result of the wafer by the imaging unit, and the laser processing position is changed from one side to the other side of the wafer or from the other side to the one side based on the amount of street displacement. With this configuration, by repeatedly performing laser processing on a street from one side of the wafer and then performing laser processing on a street from the other side of the wafer, the street displacement due to laser processing can be reduced compared to simply performing laser processing from one side or the other side, thus reducing the number of times the street displacement due to laser processing needs to be corrected. Furthermore, by changing the laser processing position from one side to the other or vice versa based on the amount of street misalignment, the laser processing position can be changed at an effective timing when the amount of street misalignment begins to increase, thereby reducing the number of times street misalignment corrections are needed.

A method for manufacturing a semiconductor chip according to the second aspect of this invention comprises the steps of: installing modules selected from a plurality of modules that perform different types of processing on a wafer on which a plurality of semiconductor chips are formed; and processing the wafer using the installed modules, wherein the number of each of the plurality of modules can be changed , and further comprises a common wafer transport unit that transports wafers between a plurality of selected modules selected from the plurality of modules, the plurality of selected modules are connected along a predetermined direction, the wafer transport unit is capable of transporting work-in-progress wafers that have not been processed by any of the plurality of selected modules in both one direction and the other direction of the predetermined direction, the selected modules include a wafer supply module that supplies wafers, and the wafer supply module also serves as a work-in-progress storage unit for storing work-in-progress wafers .

In the semiconductor chip manufacturing method according to the second aspect of this invention, as described above, the number of each of the multiple modules can be changed. This allows, for example, when the balance of cycle times for each process differs for each product, which is a wafer processed product, the equipment configuration can be changed according to the cycle time of each process. Also, for example, when a user requests to change the length of the unattended operation time, the equipment configuration can be changed according to the user's request. As a result, it is possible to provide a semiconductor chip manufacturing method that can construct an optimal equipment configuration even when the optimal equipment configuration differs depending on the product and the user's request.

A semiconductor chip according to a third aspect of this invention comprises a module selected from a plurality of modules that perform different types of processing on a wafer on which a plurality of semiconductor chips are formed, the number of each of the plurality of modules is changeable, and further comprises a common wafer transport unit that transports wafers between the plurality of selected modules selected from the plurality of modules, the plurality of selected modules are connected along a predetermined direction, and the wafer transport unit is capable of transporting work-in-progress wafers that have not been processed by any of the plurality of selected modules in both one direction and the other direction of the predetermined direction, and the selected modules include a wafer supply module that supplies wafers, and the wafer supply module is manufactured by a wafer processing apparatus that also serves as a work-in-progress storage unit for storing work-in-progress wafers .

In the semiconductor chip according to the third aspect of this invention, as described above, the number of each of the multiple modules can be changed. This allows, for example, when the balance of cycle times for each process differs for each product, which is a processed wafer, the equipment configuration can be changed according to the cycle time of each process. Also, for example, when a user requests to change the length of unattended operation time, the equipment configuration can be changed according to the user's request. As a result, it is possible to provide a semiconductor chip that can construct an optimal equipment configuration even when the optimal equipment configuration differs depending on the product and the user's request.

According to the present invention, an optimal equipment configuration can be constructed as described above.

This is a block diagram showing a semiconductor wafer processing apparatus according to the first embodiment. This is a plan view showing a wafer ring structure processed in a semiconductor wafer processing apparatus according to the first embodiment. This is a cross-sectional view along the line III-III in Figure 2. This is a plan view of a first configuration example of a semiconductor wafer processing apparatus according to the first embodiment. This is a side view of the dicing module according to the first embodiment, as seen from the Y2 direction. This is a side view of the expand module and wafer supply module according to the first embodiment, as seen from the Y2 direction. This is a side view of the expand module and wafer supply module according to the first embodiment, as seen from the X1 direction. This is a block diagram showing the controllable configuration of a semiconductor wafer processing apparatus according to the first embodiment and first configuration example. This is a flowchart of the first half of the semiconductor chip manufacturing process of the semiconductor wafer processing apparatus according to the first embodiment and first configuration example. This is a flowchart of the latter half of the semiconductor chip manufacturing process of the semiconductor wafer processing apparatus according to the first embodiment and first configuration example. This is a plan view of a second configuration example of a semiconductor wafer processing apparatus according to the first embodiment. This is a plan view of a third configuration example of a semiconductor wafer processing apparatus according to the first embodiment. This is a plan view of a fourth configuration example of a semiconductor wafer processing apparatus according to the first embodiment. This is a plan view of a fifth configuration example of a semiconductor wafer processing apparatus according to the first embodiment. This figure illustrates the change in the length of the wafer transport section according to the first embodiment. This figure illustrates the laser processing of a dicing module according to the first embodiment. This figure illustrates the laser processing and panning of a street of a dicing module according to the first embodiment. This figure illustrates a panning image of a dicing module according to the first embodiment. This figure illustrates the luminance profile based on panning images of a dicing module according to the first embodiment. This is a block diagram showing a semiconductor wafer processing apparatus according to the second embodiment. This is a diagram illustrating the processing of a semiconductor wafer according to the second embodiment. Figure (1) illustrates the transport of a semiconductor wafer according to the second embodiment. Figure (2) illustrates the transport of a semiconductor wafer according to the second embodiment. Figure (3) illustrates the transport of a semiconductor wafer according to the second embodiment. This figure illustrates how each of the multiple selection modules according to the second embodiment can function as a standalone device. This diagram illustrates how multiple selection modules according to the second embodiment can function as a combined system of standalone and line-type equipment. This figure illustrates how one of the multiple selectable modules according to the second embodiment can function as a standalone device. This is a plan view of an expanded module according to a modified example of the first embodiment. This is a side view of an expanded module according to a modification of the first embodiment, as seen from the Y2 direction. This is a side view of an expanded module according to a modification of the first embodiment, as seen from the X1 direction. This is a block diagram showing a semiconductor wafer processing apparatus according to a modified example of the second embodiment.

The following describes embodiments of the present invention based on the drawings.

[First Embodiment]
Referring to Figures 1 to 19, the configuration of the semiconductor wafer processing apparatus 100 according to the first embodiment of the present invention will be described. Note that the semiconductor wafer processing apparatus 100 is an example of the "wafer processing apparatus" in the claims.

(Semiconductor wafer processing equipment)
As shown in Figure 1, the semiconductor wafer processing apparatus 100 is an apparatus for processing a wafer W1 provided on a wafer ring structure W (see Figure 2). In this first embodiment, the semiconductor wafer processing apparatus 100 includes modules 100a selected from a plurality of modules 100a that perform different types of processing on a wafer W1 on which a plurality of semiconductor chips Ch (see Figure 7) are formed. The semiconductor wafer processing apparatus 100 can change the number of each of the plurality of modules 100a.

Furthermore, the method for manufacturing semiconductor chips Ch using this semiconductor wafer processing apparatus 100 includes the steps of: installing modules 100a selected from a plurality of modules 100a that perform different types of processing on a wafer W1 on which a plurality of semiconductor chips Ch are formed; and processing the wafer W1 using the installed modules 100a, wherein the number of each of the plurality of modules 100a can be changed.

Furthermore, the semiconductor chips Ch manufactured by this semiconductor wafer processing apparatus 100 are manufactured by a semiconductor wafer processing apparatus 100 that includes modules 100a selected from a plurality of modules 100a that perform different types of processing on a wafer W1 on which a plurality of semiconductor chips Ch are formed, and the number of each of the plurality of modules 100a can be changed.

Furthermore, in the first embodiment, the plurality of modules 100a include a dicing module 1 for dicing the wafer W1, an expandable module 2 for expanding the sheet member W2 to which the wafer W1 is attached, and a wafer supply module 3 for supplying the wafer W1.

Here, the wafer ring structure W will be described with reference to Figures 2 and 3. The wafer ring structure W comprises a wafer W1, a sheet member W2, and a ring-shaped member W3. The sheet member W2 is an example of the "dicing sheet member" as defined in the claims.

The wafer W1 is a thin, circular plate made of a semiconductor crystal, which is the material for semiconductor integrated circuits. Inside the wafer W1, a modified layer is formed along the division line by processing in the semiconductor wafer processing apparatus 100. That is, the wafer W1 is processed so that it can be divided along the division line. The sheet member W2 is an adhesive tape with elasticity. An adhesive layer is provided on the upper surface W21 of the sheet member W2. The wafer W1 is attached to the adhesive layer of the sheet member W2. The ring-shaped member W3 is a metal frame that is ring-shaped in plan view. The ring-shaped member W3 is attached to the adhesive layer of the sheet member W2, surrounding the wafer W1.

In the following, the vertical direction will be defined as the Z direction, with the upward direction being the Z1 direction and the downward direction being the Z2 direction. Two directions perpendicular to the Z direction and mutually perpendicular in the horizontal plane will be defined as the X and Y directions, respectively. One side of the X direction will be defined as the X1 direction, and the other side as the X2 direction. One side of the Y direction will be defined as the Y1 direction, and the other side as the Y2 direction.

(Example configuration)
Figure 4 shows a first configuration example of a semiconductor wafer processing apparatus 100. The semiconductor wafer processing apparatus 100 in the first configuration example comprises one dicing module 1, one expand module 2, and one wafer supply module 3. The dicing module 1, the expand module 2, and the wafer supply module 3 are connected along a predetermined direction (X direction). The dicing module 1 is located on the X2 direction side. The expand module 2 is located on the X1 direction side. The wafer supply module 3 is located in the X direction, sandwiched between the dicing module 1 and the expand module 2. The semiconductor wafer processing apparatus 100 in the first configuration example also includes a common suction hand unit 4 that transports the wafer ring structure W (wafer W1) in a predetermined direction between the dicing module 1, the expand module 2, and the wafer supply module 3. The suction hand unit 4 is an example of the "wafer transport unit" in the claims.

(Dicing module)
As shown in Figures 4 and 5, the dicing module 1 is configured to form a modified layer by irradiating the wafer W1 with a laser of a wavelength that is transparent to the wafer along the dividing lines (streets). The modified layer refers to cracks and voids formed inside the wafer W1 by the laser. This method of forming a modified layer on the wafer W1 is a type of dicing process.

Specifically, the dicing module 1 includes a base 11, a chuck table section 12, a laser section 13, and an imaging section 14.

The base 11 is the base on which the chuck table 12 is installed. In plan view, the base 11 has a rectangular shape.

<Chuck Table Section>
The chuck table section 12 includes a suction section 12a, a clamp section 12b, a rotation mechanism 12c, and a table movement mechanism 12d. The suction section 12a is configured to adsorb the wafer ring structure W to its upper surface in the Z1 direction. The suction section 12a is a table provided with suction holes and suction lines for adsorbing the lower surface of the ring-shaped member W3 of the wafer ring structure W in the Z2 direction. The suction section 12a is supported by the table movement mechanism 12d via the rotation mechanism 12c. The clamp section 12b is provided at the upper end of the suction section 12a. The clamp section 12b is configured to hold down the wafer ring structure W that has been adsorbed by the suction section 12a. The clamp section 12b holds down the ring-shaped member W3 of the wafer ring structure W that has been adsorbed by the suction section 12a from the Z1 direction. In this way, the wafer ring structure W is gripped by the suction section 12a and the clamp section 12b.

The rotation mechanism 12c is configured to rotate the suction part 12a in the circumferential direction about a rotation center axis C that extends parallel to the Z direction. The rotation mechanism 12c is attached to the upper end of the table moving mechanism 12d. The table moving mechanism 12d is configured to move the wafer ring structure W in the X and Y directions. The table moving mechanism 12d has an X-direction moving mechanism 121 and a Y-direction moving mechanism 122. The X-direction moving mechanism 121 is configured to move the rotation mechanism 12c in the X1 or X2 direction. The X-direction moving mechanism 121 has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder. The Y-direction moving mechanism 122 is configured to move the rotation mechanism 12c in the Y1 or Y2 direction. The Y-direction moving mechanism 122 has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.

<Laser section>
The laser unit 13 is configured to irradiate a wafer W1 of the wafer ring structure W, which is held by the chuck table unit 12, with laser light. The laser unit 13 is located on the Z1 side of the chuck table unit 12. The laser unit 13 includes a laser irradiation unit 13a, a mounting member 13b, and a Z-direction movement mechanism 13c. The laser irradiation unit 13a is configured to irradiate pulsed laser light. The mounting member 13b is a frame to which the laser unit 13 and the imaging unit 14 are mounted. The Z-direction movement mechanism 13c is configured to move the laser unit 13 in the Z1 or Z2 direction. The Z-direction movement mechanism 13c includes, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder. Note that the laser irradiation unit 13a may be a laser irradiation unit that oscillates continuous wave laser light as laser light, other than pulsed laser light, as long as it can form a modified layer by multiphoton absorption.

<Imaging Department>
The imaging unit 14 is configured to image the wafer W1 of the wafer ring structure W held by the chuck table unit 12. The imaging unit 14 is located on the Z1 side of the chuck table unit 12. The imaging unit 14 includes a high-resolution camera 14a, a wide-angle camera 14b, a Z-direction movement mechanism 14c, and a Z-direction movement mechanism 14d.

The high-resolution camera 14a and the wide-angle camera 14b are cameras for near-infrared imaging. The high-resolution camera 14a has a narrower field of view than the wide-angle camera 14b. The high-resolution camera 14a has a higher resolution than the wide-angle camera 14b. The wide-angle camera 14b has a wider field of view than the high-resolution camera 14a. The wide-angle camera 14b has a lower resolution than the high-resolution camera 14a. The high-resolution camera 14a is located on the X1 direction side of the laser irradiation unit 13a. The wide-angle camera 14b is located on the X2 direction side of the laser irradiation unit 13a. Thus, the high-resolution camera 14a, the laser irradiation unit 13a, and the wide-angle camera 14b are arranged adjacent to each other in this order from the X1 direction side to the X2 direction side.

The Z-direction movement mechanism 14c is configured to move the high-resolution camera 14a in the Z1 or Z2 direction. The Z-direction movement mechanism 14c has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder. The Z-direction movement mechanism 14d is configured to move the wide-angle camera 14b in the Z1 or Z2 direction. The Z-direction movement mechanism 14d has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.

(Expandable module)
As shown in Figures 4, 6, and 7, the expand module 2 is configured to divide the wafer W1 to form multiple semiconductor chips Ch. The expand module 2 is also configured to form sufficient gaps between the multiple semiconductor chips Ch. Here, a modified layer is formed on the wafer W1 in the dicing module 1 by irradiating the wafer W1 with a laser of a wavelength that is transparent to the wafer W1 along the dividing lines (streets). In the expand module 2, multiple semiconductor chips Ch are formed by dividing the wafer W1 along the modified layer that was previously formed in the dicing module 1.

Therefore, in the expanded module 2, the wafer W1 is divided along the modified layer by expanding the sheet member W2. Furthermore, in the expanded module 2, expanding the sheet member W2 widens the gaps between the multiple semiconductor chips Ch formed by the division.

The expandable module 2 includes a base 205, a cold air supply unit 206, a cooling unit 207, an expandable section 208, a base 209, an expansion and maintenance member 210, a heat shrink section 211, an ultraviolet irradiation section 212, a squeegee section 213, and a clamp section 214.

<base>
The base 205 is a base on which the expandable section 208, cooling unit 207, ultraviolet irradiation section 212, and squeegee section 213 are installed. In plan view, the base 205 has a rectangular shape. In Figure 7, the clamp section 214, which is positioned in the Z1 direction of the cooling unit 207, is shown by a dotted line.

<Cold air supply unit>
The cold air supply unit 206 is configured to supply cold air to the sheet member W2 from the Z1 direction when the sheet member W2 is expanded by the expand unit 208.

Specifically, the cold air supply unit 206 comprises a supply unit body 206a, a cold air supply port 206b, and a moving mechanism 206c. The cold air supply port 206b is configured to allow cold air supplied from the cold air supply device to flow out. The cold air supply port 206b is located at the Z2-direction end of the supply unit body 206a. The cold air supply port 206b is positioned in the center of the Z2-direction end of the supply unit body 206a. The moving mechanism 206c includes, for example, a linear conveyor module, a motor with a ball screw and encoder, or a cylinder.

The cold air supply device is a device for generating cold air. The cold air supply device supplies air that has been cooled, for example, by a heat pump. Such a cold air supply device is installed on the base 205. The cold air supply unit 206 and the cold air supply device are connected by a hose (not shown).

<Cooling Unit>
The cooling unit 207 is configured to cool the sheet member W2 from the Z2 direction.

Specifically, the cooling unit 207 includes a cooling member 207a having a cooling body 271 and a Peltier element 272, and a Z-direction movement mechanism 207b. The cooling body 271 is made of a material with a large heat capacity and high thermal conductivity. The cooling body 271 is made of a metal such as aluminum. The Peltier element 272 is configured to cool the cooling body 271. Note that the cooling body 271 is not limited to aluminum, but may be made of other materials with a large heat capacity and high thermal conductivity. The Z-direction movement mechanism 207b is a cylinder.

The cooling unit 207 is configured to be movable in the Z1 or Z2 direction by a Z-direction movement mechanism 207b. This allows the cooling unit 207 to move to a position in contact with the sheet member W2, and to a position separated from the sheet member W2.

<Expanded section>
The expanded portion 208 is configured to divide the wafer W1 along the dividing line by expanding the sheet member W2 of the wafer ring structure W.

Specifically, the expanded portion 208 has an expanded ring 281. The expanded ring 281 is configured to expand (expand) the sheet member W2 by supporting it from the Z2 direction. The expanded ring 281 has a ring shape in plan view. The structure of the expanded ring 281 will be described in detail later.

<base>
The base 209 is a substrate on which the cold air supply unit 206, the expansion and maintenance member 210, and the heat shrink unit 211 are installed.

<Expansion and maintenance member>
As shown in Figures 7 and 8, when heating by the heating ring 211a, the clamp portion 214 rises to help contract the sheet member W2 near the ring-shaped member W3, lowering the tension of the sheet member W2 near the ring-shaped member W3 to just before it slackens. However, to prevent the gap between semiconductor chips Ch from returning to a narrow state due to this slack extending to the sheet member W2 directly below the wafer W1, the expansion and maintenance member 210 is configured to press the sheet member W2 from the Z1 direction side. The expansion and maintenance member 210 also shields against ultraviolet light irradiated from the inside below to prevent leakage of ultraviolet light from the gap between semiconductor chips Ch. The expansion and maintenance member 210 also forms a closed space for purging the wafer W1 with nitrogen during ultraviolet irradiation. Furthermore, the expansion and maintenance member 210 blocks the inflow of hot air from the outside to prevent fine particles generated when heating the sheet member W2 from the outside from reaching the wafer W1.

Specifically, the expansion and maintenance member 210 has a pressing ring portion 210a, a cover portion 210b, and an intake portion 210c. The pressing ring portion 210a has a ring shape in plan view. The cover portion 210b is provided on the pressing ring portion 210a so as to close the opening of the pressing ring portion 210a. The intake portion 210c is an intake ring that has a ring shape in plan view. Multiple intake ports are formed on the lower surface of the intake portion 210c on the Z2 direction side. Furthermore, the pressing ring portion 210a is configured to move in the Z direction by a Z direction movement mechanism 210d. That is, the Z direction movement mechanism 210d is configured to move the pressing ring portion 210a to a position that presses the sheet member W2 and to a position away from the sheet member W2. The Z direction movement mechanism 210d has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.

<Heat shrink section>
The heat shrink portion 211 is configured to shrink the sheet member W2, which has been expanded by the expand portion 208, by heating while maintaining the gaps between the multiple semiconductor chips Ch.

The heat shrink section 211 includes a heating ring 211a and a Z-direction movement mechanism 211b. The heating ring 211a has a ring shape in plan view. The heating ring 211a also has a sheath heater for heating the sheet member W2. The Z-direction movement mechanism 211b is configured to move the heating ring 211a in the Z direction. The Z-direction movement mechanism 211b includes, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.

<UV irradiation area>
The ultraviolet irradiation unit 212 is configured to irradiate the sheet member W2 with ultraviolet light in order to reduce the adhesive strength of the adhesive layer of the sheet member W2. Specifically, the ultraviolet irradiation unit 212 has an ultraviolet light source. The ultraviolet irradiation unit 212 is located at the Z1 direction end of the pressing portion 213a of the squeegee portion 213, which will be described later. The ultraviolet irradiation unit 212 is configured to irradiate the sheet member W2 with ultraviolet light while moving together with the squeegee portion 213.

<Squeegee section>
The squeegee portion 213 is configured to further divide the wafer W1 along the modified layer by locally pressing the wafer W1 from the Z2 direction side after expanding the sheet member W2. Specifically, the squeegee portion 213 has a pressing portion 213a, a Z-direction moving mechanism 213b, an X-direction moving mechanism 213c, and a rotation mechanism 213d.

The pressing portion 213a is configured to generate bending stress in the wafer W1 and divide the wafer W1 along the modified layer by moving with the X-direction movement mechanism 213c while pressing the wafer W1 from the Z2 direction side via the sheet member W2 after its angle has been adjusted by the rotation mechanism 213d. When the pressing portion 213a rises to the raised position on the Z1 direction side by the Z-direction movement mechanism 213b, the wafer W1 is pressed via the sheet member W2. When the pressing portion 213a descends to the lowered position on the Z2 direction side by the Z-direction movement mechanism 213b, the wafer W1 is no longer pressed. The pressing portion 213a is a squeegee.

The pressing portion 213a is attached to the Z1 direction end of the Z-direction moving mechanism 213b. The Z-direction moving mechanism 213b is configured to move the pressing portion 213a linearly in the Z1 or Z2 direction. The Z-direction moving mechanism 213b is, for example, a ball screw and an encoder motor, or a cylinder. The Z-direction moving mechanism 213b is attached to the Z1 direction end of the X-direction moving mechanism 213c.

The X-direction movement mechanism 213c is attached to the Z1-direction end of the rotation mechanism 213d. The X-direction movement mechanism 213c is configured to move the pressing portion 213a linearly in one direction. The X-direction movement mechanism 213c has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.

In the squeegee section 213, the pressing section 213a is raised to the raised position by the Z-direction movement mechanism 213b. In the squeegee section 213, the pressing section 213a locally presses the wafer W1 from the Z2 direction side via the sheet member W2, and the wafer W1 is split as the pressing section 213a moves in the Y direction by the X-direction movement mechanism 213c. In the squeegee section 213, the pressing section 213a is lowered to the lowered position by the Z-direction movement mechanism 213b. In the squeegee section 213, after the pressing section 213a has finished lowering to the lowered position, the pressing section 213a is rotated 90 degrees by the rotation mechanism 213d.

In the squeegee section 213, the pressing section 213a is raised to the raised position by the Z-direction movement mechanism 213b. In the squeegee section 213, after the pressing section 213a rotates 90 degrees, the pressing section 213a locally presses the wafer W1 from the Z2 direction side via the sheet member W2, and the pressing section 213a moves in the X direction by the X-direction movement mechanism 213c, thereby splitting the wafer W1.

<Clamping section>
The clamp portion 214 is configured to grip the ring-shaped member W3 of the wafer ring structure W. Specifically, the clamp portion 214 has a gripping portion 214a, a Z-direction movement mechanism 214b, and a Y-direction movement mechanism 214c. The gripping portion 214a supports the ring-shaped member W3 from the Z2 direction and presses the ring-shaped member W3 from the Z1 direction. In this way, the ring-shaped member W3 is gripped by the gripping portion 214a. The gripping portion 214a is attached to the Z-direction movement mechanism 214b.

The Z-direction movement mechanism 214b is configured to move the clamp portion 214 in the Z direction. Specifically, the Z-direction movement mechanism 214b is configured to move the gripping portion 214a in the Z1 or Z2 direction. The Z-direction movement mechanism 214b has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder. The Z-direction movement mechanism 214b is attached to the Y-direction movement mechanism 214c. The Y-direction movement mechanism 214c is configured to move the Z-direction movement mechanism 214b in the Y1 or Y2 direction. The Y-direction movement mechanism 214c has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder.

(Wafer supply module)
The wafer supply module 3 includes a base 201, a cassette section 202, and a lift-up hand section 203.

<base>
The base 201 is a base on which the cassette unit 202 and the lift-up hand unit 203 are installed. In plan view, the base 201 has a rectangular shape.

<Cassette section>
The cassette section 202 is configured to accommodate a plurality of wafer ring structures W (wafers W1). The cassette section 202 includes a wafer cassette 202a, a Z-direction movement mechanism 202b, and a pair of mounting sections 202c.

Multiple wafer cassettes (3) are arranged in the Z direction. Each wafer cassette 202a has a storage space capable of accommodating multiple wafer ring structures W (5). The wafer ring structures W are supplied and placed into the wafer cassette 202a manually. Each wafer cassette 202a may accommodate 1 to 4 wafer ring structures W, or 6 or more wafer ring structures W. Furthermore, each wafer cassette 202a may be arranged in a 1, 2, or 4 or more configuration in the Z direction.

The Z-direction movement mechanism 202b is configured to move the wafer cassette 202a in the Z1 or Z2 direction. The Z-direction movement mechanism 202b includes, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder. The Z-direction movement mechanism 202b also includes a mounting table 202d that supports the wafer cassette 202a from below. Multiple mounting tables (three in total) are arranged to match the positions of the multiple wafer cassettes 202a.

Multiple (five) mounting sections 202c are arranged inside the wafer cassette 202a. The ring-shaped member W3 of the wafer ring structure W is placed on the pair of mounting sections 202c from the Z1 direction side. One of the pair of mounting sections 202c protrudes from the inner surface of the wafer cassette 202a on the X1 direction side toward the X2 direction side. The other of the pair of mounting sections 202c protrudes from the inner surface of the wafer cassette 202a on the X2 direction side toward the X1 direction side.

<Lift-up hand section>
The lift-up hand unit 203 is configured to be able to remove the wafer ring structure W from the cassette unit 202. The lift-up hand unit 203 is also configured to be able to accommodate the wafer ring structure W in the cassette unit 202.

Specifically, the lift-up hand section 203 includes a Y-direction movement mechanism 203a and a lift-up hand 203b. The Y-direction movement mechanism 203a has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder. The lift-up hand 203b is configured to support the ring-shaped member W3 of the wafer ring structure W from the Z2 direction side.

(Suction handle part)
The suction hand portion 4 is configured to adsorb the ring-shaped member W3 of the wafer ring structure W from the Z1 direction side.

Specifically, the suction hand section 4 includes an X-direction movement mechanism 204a, a Z-direction movement mechanism 204b, and a suction hand 204c. The X-direction movement mechanism 204a is configured to move the suction hand 204c in the X direction. The Z-direction movement mechanism 204b is configured to move the suction hand 204c in the Z direction. The X-direction movement mechanism 204a and the Z-direction movement mechanism 204b have, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder. The suction hand 204c is configured to adsorb and support the ring-shaped member W3 of the wafer ring structure W from the Z1 direction side. Here, the suction hand 204c supports the ring-shaped member W3 of the wafer ring structure W by generating negative pressure.

(Controllable configuration of semiconductor wafer processing equipment)
As shown in Figure 8, the semiconductor wafer processing apparatus 100 of the first configuration example includes a first control unit 101, a second control unit 102, a third control unit 103, a fourth control unit 104, a fifth control unit 105, a sixth control unit 106, a seventh control unit 107, an eighth control unit 108, an expand control calculation unit 109, a handling control calculation unit 110, and a dicing control calculation unit 111.

The first control unit 101 is configured to control the squeegee unit 213. The first control unit 101 includes a CPU (Central Processing Unit) and a storage unit having ROM (Read Only Memory) and RAM (Random Access Memory), etc. The first control unit 101 may also include an HDD (Hard Disk Drive) as the storage unit, which retains stored information even after voltage interruption. Furthermore, the HDD may be provided in common to the first control unit 101, the second control unit 102, the third control unit 103, the fourth control unit 104, the fifth control unit 105, the sixth control unit 106, the seventh control unit 107, and the eighth control unit 108.

The second control unit 102 is configured to control the cold air supply unit 206 and the cooling unit 207. The second control unit 102 includes a CPU and a storage unit having ROM and RAM. The third control unit 103 is configured to control the heat shrink unit 211 and the ultraviolet irradiation unit 212. The third control unit 103 includes a CPU and a storage unit having ROM and RAM. Note that the second control unit 102 and the third control unit 103 may include an HDD or the like as the storage unit, which retains stored information even after voltage interruption.

The fourth control unit 104 is configured to control the cassette unit 202 and the lift-up hand unit 203. The fourth control unit 104 includes a CPU and a storage unit having ROM and RAM. The fifth control unit 105 is configured to control the suction hand unit 4. The fifth control unit 105 includes a CPU and a storage unit having ROM and RAM. Note that the fourth control unit 104 and the fifth control unit 105 may include an HDD or the like as the storage unit, which retains stored information even after voltage interruption.

The sixth control unit 106 is configured to control the chuck table unit 12. The sixth control unit 106 includes a CPU and a storage unit having ROM and RAM. The seventh control unit 107 is configured to control the laser unit 13. The seventh control unit 107 includes a CPU and a storage unit having ROM and RAM. The eighth control unit 108 is configured to control the imaging unit 14. The eighth control unit 108 includes a CPU and a storage unit having ROM and RAM. Note that the sixth control unit 106, the seventh control unit 107, and the eighth control unit 108 may include an HDD or the like as the storage unit, which retains stored information even after voltage interruption.

The expand control calculation unit 109 is configured to perform calculations related to the expansion process of the sheet member W2 based on the processing results of the first control unit 101, the second control unit 102, and the third control unit 103. The expand control calculation unit 109 includes a CPU and a storage unit having ROM and RAM.

The handling control calculation unit 110 is configured to perform calculations related to the movement process of the wafer ring structure W based on the processing results of the fourth control unit 104 and the fifth control unit 105. The handling control calculation unit 110 includes a CPU and a storage unit having ROM and RAM.

The dicing control calculation unit 111 is configured to perform calculations related to the dicing process of the wafer W1 based on the processing results of the sixth control unit 106, the seventh control unit 107, and the eighth control unit 108. The dicing control calculation unit 111 includes a CPU and a storage unit having ROM and RAM.

The memory unit 112 stores programs for operating the dicing module 1, the expand module 2, the wafer supply module 3, and the suction hand unit 4. The memory unit 112 includes ROM, RAM, and HDD, among other things.

(Semiconductor chip manufacturing process)
Referring to Figures 9 and 10, the overall operation of the semiconductor wafer processing apparatus 100 in the first configuration example will be described below.

In step S1, the wafer ring structure W is removed from the cassette section 202. That is, after the wafer ring structure W housed in the cassette section 202 is supported by the lift-up hand 203b, the lift-up hand 203b is moved in the Y1 direction by the Y-direction movement mechanism 203a, thereby removing the wafer ring structure W from the cassette section 202. In step S2, the wafer ring structure W is transferred to the chuck table section 12 of the dicing module 1 by the suction hand 204c. That is, the wafer ring structure W removed from the cassette section 202 is moved in the X2 direction by the X-direction movement mechanism 204a while being held by the suction hand 204c. Then, the wafer ring structure W that has moved in the X2 direction is transferred from the suction hand 204c to the chuck table section 12 and then gripped by the chuck table section 12.

In step S3, a modified layer is formed on the wafer W1 by the laser unit 13. In step S4, the wafer ring structure W having the wafer W1 with the modified layer formed on it is transferred to the clamp unit 214 by the suction hand 204c. In step S5, the sheet member W2 is cooled by the cold air supply unit 206 and the cooling unit 207. Specifically, the wafer ring structure W held by the clamp unit 214 is moved (descended) in the Z2 direction by the Z-direction movement mechanism 214b to bring it into contact with the cooling unit 207, and the sheet member W2 is cooled by supplying cold air from the Z1 direction side by the cold air supply unit 206.

In step S6, the wafer ring structure W is moved to the expandable section 208 by the clamp section 214. That is, the wafer ring structure W, with the cooled sheet member W2, is moved in the Y1 direction by the Y-direction movement mechanism 214c while being held by the clamp section 214. In step S7, the sheet member W2 is expanded by the expandable section 208. That is, the wafer ring structure W is moved in the Z2 direction by the Z-direction movement mechanism 214b while being held by the clamp section 214. The sheet member W2 then comes into contact with the expandable ring 281 and is pulled by the expandable ring 281, thereby expanding it. As a result, the wafer W1 is divided along the dividing line (modified layer).

In step S8, the expanded sheet member W2 is pressed down from the Z1 direction by the expansion and maintenance member 210. That is, the pressing ring portion 210a moves (descends) in the Z2 direction by the Z direction movement mechanism 210d until it contacts the sheet member W2. Then, the process proceeds from point A in Figure 9 through point A in Figure 10 to step S9.

As shown in Figure 10, in step S9, after the sheet member W2 is held down by the expansion and retention member 210, the wafer W1 is pressed by the squeegee portion 213, and a closed space is formed on the wafer W1 and nitrogen is filled inside, and then ultraviolet light is irradiated onto the sheet member W2 by the ultraviolet irradiation portion 212. As a result, the wafer W1 is further divided by the squeegee portion 213. In addition, the adhesive force of the sheet member W2 is reduced by the ultraviolet light irradiated from the ultraviolet irradiation portion 212.

In step S10, the sheet member W2 is heated and shrunk by the heat shrink section 211, while the clamp section 214 rises. At this time, the intake section 210c draws in air near the heated sheet member W2. In step S11, the wafer ring structure W is transferred from the clamp section 214 to the suction hand 204c. That is, while the wafer ring structure W is gripped by the clamp section 214, it is moved in the Y2 direction by the Y-direction movement mechanism 214c. Then, at a position on the Z1 direction side of the cooling unit 207, the grip of the wafer ring structure W by the clamp section 214 is released, and it is then picked up by the suction hand 204c. Steps S9 and S10 may be performed sequentially, but they can also be performed simultaneously, and performing them simultaneously can shorten the process cycle time.

In step S12, the wafer ring structure W is transferred to the lift-up hand 203b by the suction hand 204c. In step S13, the wafer ring structure W is housed in the cassette section 202. That is, the wafer ring structure W, supported by the lift-up hand 203b, is moved to the Y1 direction by the Y-direction movement mechanism 203a, thereby housing the wafer ring structure W in the cassette section 202. With these steps, the processing performed on one wafer ring structure W is completed. Then, the process returns to step S1 via point B in Figure 10 and point B in Figure 9.

(Second example configuration)
Figure 11 shows a second configuration example of a semiconductor wafer processing apparatus 100. The semiconductor wafer processing apparatus 100 in the second configuration example comprises one expand module 2 and one wafer supply module 3. The expand module 2 and the wafer supply module 3 are connected along a predetermined direction (X direction). The expand module 2 is located on the X1 direction side. The wafer supply module 3 is located on the X2 direction side. The semiconductor wafer processing apparatus 100 in the second configuration example also includes a common suction hand section 4 that transports the wafer ring structure W (wafer W1) in a predetermined direction between the expand module 2 and the wafer supply module 3.

(Example of configuration 3)
Figure 12 shows a third configuration example of a semiconductor wafer processing apparatus 100. The semiconductor wafer processing apparatus 100 in the third configuration example comprises one dicing module 1 and one wafer supply module 3. The dicing module 1 and the wafer supply module 3 are connected along a predetermined direction (X direction). The dicing module 1 is located on the X2 direction side. The wafer supply module 3 is located on the X1 direction side. Furthermore, the semiconductor wafer processing apparatus 100 in the third configuration example includes a common suction handle 4 that transports the wafer ring structure W (wafer W1) in a predetermined direction between the dicing module 1 and the wafer supply module 3.

(Example of configuration 4)
Figure 13 shows a fourth configuration example of a semiconductor wafer processing apparatus 100. The semiconductor wafer processing apparatus 100 in the fourth configuration example includes one dicing module 1. A wafer ring structure W (wafer W1) is manually supplied to the dicing module 1 by an operator.

(Example of configuration 5)
Figure 14 shows a fifth configuration example of a semiconductor wafer processing apparatus 100. The semiconductor wafer processing apparatus 100 in the fifth configuration example comprises two dicing modules 1, one expand module 2, and two wafer supply modules 3. In the semiconductor wafer processing apparatus 100, two dicing modules 1 and two wafer supply modules 3 of the same type are arranged. Furthermore, the two dicing modules 1, one expand module 2, and two wafer supply modules 3 are connected along a predetermined direction (X direction).

One of the two dicing modules 1 is positioned furthest towards the X2 direction. The other of the two dicing modules 1 is positioned furthest towards the X1 direction. In the semiconductor wafer processing apparatus 100, two dicing modules 1 of the same type are positioned on one side and the other side, flanking an expand module 2 and a wafer supply module 3 of a different type. The expand module 2 and the two wafer supply modules 3 are positioned between the two dicing modules 1 in this order from the X1 direction to the X2 direction. Furthermore, the semiconductor wafer processing apparatus 100 of the fifth configuration example includes a common suction hand unit 4 that transports the wafer ring structure W (wafer W1) in a predetermined direction (X direction) between the two dicing modules 1, one expand module 2, and the two wafer supply modules 3.

As described in the fifth configuration example above, in the first embodiment, the semiconductor wafer processing apparatus 100 can arrange two or more modules 100a of the same type. Also, in the first embodiment, the semiconductor wafer processing apparatus 100 can arrange modules 100a of the same type on one side and the other side with other types of modules 100a in between. Furthermore, as described in the first to third and fifth configuration examples above, in the first embodiment, the semiconductor wafer processing apparatus 100 includes a common suction hand unit 4 that transports a wafer ring structure W (wafer W1) in a predetermined direction (X direction) between a plurality of modules 100a selected from among the plurality of modules 100a. The X-direction movement mechanism 204a of the suction hand unit 4 is arranged to span all of the plurality of modules 100a that have been selected from among the plurality of modules 100a and connected along the predetermined direction.

<Change in the length of the suction handle>
Furthermore, in the first embodiment, the length of the suction hand portion 4 can be changed in a predetermined direction (X direction) according to the number of modules 100a selected from among the plurality of modules 100a and connected along that predetermined direction. Specifically, the length of the X-direction moving mechanism 204a can be changed in the suction hand portion 4 according to the number of modules 100a selected from among the plurality of modules 100a and connected along the predetermined direction.

As shown in Figure 15, the X-direction movement mechanism 204a has a linear conveyor module 40. The linear conveyor module 40 is a conveying device that moves the slider 50 in a predetermined direction (X-direction). The linear conveyor module 40 has a linear motor stator that extends in the predetermined direction. The slider 50 has a linear motor movable element. The linear motor is formed by the linear motor stator and the linear motor movable element. Furthermore, a magnetic thrust force that moves the slider 50 in the predetermined direction is generated by the magnetic interaction between the linear motor stator of the linear conveyor module 40 and the linear motor movable element of the slider 50. A suction hand 204c is connected to the slider 50 via the Z-direction movement mechanism 204b.

The linear conveyor module 40 is configured to be connectable in a predetermined direction via connecting members 61. By changing the number of linear conveyor modules 40 that are connected, the length of the X-direction movement mechanism 204a (the length over which the suction hand 204c can move in a predetermined direction) can be changed. The linear conveyor module 40 has mounting portions 41 to which the connecting members 61 are attached. Mounting portions 41 are provided at both ends of the linear conveyor module 40 in the X direction. In addition, an end member 62 is attached to the mounting portion 41 at the end of the linear conveyor module 40 that is positioned at the very end of the connected linear conveyor modules 40.

<Independent parallel control of dicing and expanding>
In the description of the operation of the semiconductor wafer processing apparatus 100 in the first configuration example above, an example was described in which dicing (formation of a modified layer) and expansion are performed consecutively on a single wafer ring structure W. However, when the cycle time of dicing and the cycle time of expansion are completely different, performing dicing and expansion consecutively results in a large loss of time (module downtime) due to the mismatch in cycle times.

Therefore, in the first embodiment, such as the first configuration example which includes a dicing module 1 and an expand module 2, the semiconductor wafer processing apparatus 100 independently supplies the wafer W1 to be diced (formed a modified layer) (hereinafter referred to as the first wafer W1) and the wafer W1 to be expanded (hereinafter referred to as the second wafer W1) to the dicing module 1 and the expand module 2, respectively, and is configured to independently and in parallel perform the dicing of the first wafer W1 by the dicing module 1 (formation of a modified layer) and the expansion of the sheet member W2 of the second wafer W1 by the expand module 2.

In this case, the multiple wafer cassettes 202a of the wafer supply module 3 include a wafer cassette 202a (hereinafter referred to as the first wafer cassette 202a) on which only a wafer ring structure W including the first wafer W1 is arranged, and a wafer cassette 202a (hereinafter referred to as the second wafer cassette 202a) on which only a wafer ring structure W including the second wafer W1 is arranged.

The wafer supply module 3 is configured to supply a wafer ring structure W, including an undiced first wafer W1, from the first wafer cassette 202a to the dicing module 1 via the suction hand unit 204. The dicing module 1 is configured to form a modified layer on the first wafer W1 of the supplied wafer ring structure W. The dicing module 1 is also configured to return the wafer ring structure W, including the first wafer W1 with the modified layer formed on it, to the first wafer cassette 202a of the wafer supply module 3 via the suction hand unit 204. At this time, the wafer ring structure W, including the first wafer W1 with the modified layer formed on it, is not supplied to the expand module 2.

Similarly, the wafer supply module 3 is configured to supply a wafer ring structure W, including a second wafer W1 with a modified layer formed on it but not yet expanded, from the second wafer cassette 202a to the expand module 2 via the suction hand portion 204. The expand module 2 is configured to expand the sheet member W2 of the supplied wafer ring structure W. The expand module 2 is also configured to return the wafer ring structure W, including the expanded sheet member W2 and the divided second wafer W1, to the second wafer cassette 202a of the wafer supply module 3 via the suction hand portion 204. In this way, the formation of the modified layer on the first wafer W1 and the expansion of the sheet member W2 of the second wafer W1 are performed independently and in parallel.

<Dicing>
As shown in Figure 16, the dicing module 1 is configured to repeatedly perform laser processing on a street St from one side (Y2 direction side) of the wafer W1 and on a street St from the other side (Y1 direction side) of the wafer W1. Note that Figure 16 only shows the street St that has been laser processed. In addition, although Figure 16 shows an example in which laser processing is performed on a street St in one direction, laser processing is also performed on a street St in the other direction perpendicular to the first direction by rotating the wafer W1 by 90 degrees using the rotation mechanism 12c.

Furthermore, the dicing module 1 is configured to perform laser processing on one street St by moving the wafer W1 in the X direction using the X direction movement mechanism 121, thereby moving the laser beam from the laser unit 13 relative to the street St in the X direction. The dicing module 1 is also configured to move the wafer W1 in the Y direction using the Y direction movement mechanism 122, thereby moving the laser unit 13 relative to a position above the next street St.

When laser processing is performed on the street St, a modified layer is formed inside the wafer W1. At this time, the formation of the modified layer causes the wafer W1 to expand slightly in the Y direction, resulting in a displacement of the street St in the Y direction. Therefore, correction is performed to correct the displacement of the street St caused by laser processing. Correction of the street St displacement involves, for example, obtaining the amount of the street St displacement by imaging the surface of the wafer W1 with the imaging unit 14, and if the obtained amount of the street St displacement exceeds a threshold, moving the wafer W1 with the chuck table unit 12 to correct the position of the street St.

Therefore, as described above, by performing dicing by repeatedly laser processing the street St from one side of the wafer W1 (Y2 direction side) and then laser processing the street St from the other side of the wafer W1 (Y1 direction side), the effects of the positional displacement of the street St when laser processing is performed from one side of the wafer W1 and the effects of the positional displacement of the street St when laser processing is performed from the other side of the wafer W1 cancel each other out, thus reducing the positional displacement of the street St caused by laser processing. As a result, it is possible to reduce the number of times the positional displacement of the street St needs to be corrected.

Furthermore, in the first embodiment, as shown in Figures 17 to 19, the dicing module 1 is configured to image the wafer W1 with the imaging unit 14, acquire the amount of street misalignment Am due to laser processing based on the imaging result of the wafer W1 by the imaging unit 14, and change the position of the laser processing from one side to the other or from the other side to the one side of the wafer W1 based on the amount of street misalignment Am. In other words, the dicing module 1 is configured to determine the timing of the change in the position of the laser processing from one side to the other or from the other side to the one side of the wafer W1 based on the amount of street misalignment Am.

Specifically, the dicing module 1 is configured to acquire a panning image G by moving the laser beam from the laser unit 13 relative to the street St in the X direction, performing laser processing on the street St, while continuously exposing the unprocessed side of the high-resolution camera 14a and wide-angle camera 14b, which are moved relative to the street St in the X direction along with the laser unit 13. For example, when laser processing is performed from the X1 direction to the X2 direction, the panning image G is acquired by the high-resolution camera 14a positioned on the X2 direction side relative to the laser unit 13. Also, when laser processing is performed from the X2 direction to the X1 direction, the panning image G is acquired by the wide-angle camera 14b positioned on the X1 direction side relative to the laser unit 13. The panning image G is an image of the unprocessed street St.

Furthermore, the exposure of the high-resolution camera 14a or the wide-angle camera 14b may be performed over the entire length of one street St, or over a portion of one street St. Also, the acquisition of panning images G may be performed for each street St, or for multiple streets St (e.g., two streets). If performed for even-numbered streets (e.g., every two streets), the panning images G will be acquired by either the high-resolution camera 14a or the wide-angle camera 14b, but not both.

The dicing module 1 is configured to obtain a one-dimensional image with pixels aligned in the Y direction by averaging the brightness of pixels in the two-dimensional panning image G, which is a two-dimensional image with pixels aligned in the X and Y directions, in the X direction, and to obtain a brightness profile P from the obtained one-dimensional image. Furthermore, the dicing module 1 is configured to obtain the Y-direction center position of a portion Stc corresponding to a street St of the brightness profile P as the Y-direction center position Ps of the street St, based on the brightness profile P. The dicing module 1 is also configured to obtain the distance between the Y-direction center position Ps of the street St and the Y-direction center position Pc of the camera (high-resolution camera 14a or wide-angle camera 14b) (i.e., the Y-direction center position of the brightness profile P) as the positional displacement amount Am of the street St.

The dicing module 1 is configured to change the laser processing position from one side to the other or from one side to the other when, for example, the displacement amount Am of the street St exceeds a threshold. That is, when the dicing module 1 is performing laser processing on the street St from one side of the wafer W1, and it is detected that the displacement amount Am of the street St exceeds a threshold, it is configured to change the laser processing position from one side to the other of the wafer W1 and perform laser processing on the street St from the other side of the wafer W1. Also, when the dicing module 1 is performing laser processing on the street St from the other side of the wafer W1, and it is detected that the displacement amount Am of the street St exceeds a threshold, it is configured to change the laser processing position from the other side to the one side of the wafer W1 and perform laser processing on the street St from one side of the wafer W1. Note that the threshold is smaller than the threshold for the above displacement correction, and the laser processing position is changed at a timing when the above displacement correction is not required.

(Effects of the first embodiment)
In the first embodiment, the following effects can be obtained.

In the first embodiment, as described above, the semiconductor wafer processing apparatus 100 allows for the change of the number of each of the multiple modules 100a. Because the number of each of the multiple modules 100a can be changed, for example, if the cycle time for each process differs for each product, which is a processed wafer W1, the equipment configuration can be changed to match the cycle time for each process for each product. Furthermore, if a user requests to change the length of unattended operation time, for example, to increase the length of unattended operation time at night when there are fewer workers, the equipment configuration can be changed to meet the user's request. As a result, even when the optimal equipment configuration differs depending on the product and user requirements, the optimal equipment configuration can be constructed.

Furthermore, in the first embodiment, as described above, the plurality of modules 100a include a dicing module 1 for dicing the wafer W1, an expandable module 2 for expanding the sheet member W2 to which the wafer W1 is attached, and a wafer supply module 3 for supplying the wafer W1. This allows the number of dicing modules 1, expandable modules 2, and wafer supply modules 3 to be changed according to the product and user requirements.

Furthermore, in the first embodiment, as described above, it is possible to arrange two or more modules 100a of the same type. By arranging two or more modules 100a of the same type, the processing capacity of the two or more modules 100a can be increased, so if the processing cycle time of the two or more modules 100a is large, the imbalance in cycle time can be easily adjusted.

Furthermore, in the first embodiment, as described above, modules 100a of the same type can be arranged on one side and the other side with modules 100a of other types in between. This improves the degree of freedom in arranging modules 100a compared to the case where modules 100a of the same type can only be arranged adjacent to each other.

Furthermore, in the first embodiment, as described above, the modules 100a are connected along a predetermined direction. This prevents the device from becoming larger in directions other than the predetermined direction, as the modules 100a are connected along a predetermined direction.

Furthermore, in the first embodiment, as described above, the semiconductor wafer processing apparatus 100 is equipped with a common suction hand unit 4 that transports the wafer W1 in a predetermined direction between a plurality of modules 100a selected from among a plurality of modules 100a. As a result, since the suction hand unit 4 is common among the plurality of modules 100a, the complexity of the structure can be suppressed compared to the case where a suction hand unit 4 is provided for each module 100a. In addition, when processing the wafer W1 using multiple so-called standalone devices that operate independently rather than modules, the wafer W1 may be moved between the plurality of standalone devices by an operator or an overhead transport mechanism. In this case, if it is necessary to move the wafer W1 at a high frequency between the plurality of standalone devices, the movement of the wafer W1 by the operator or the overhead transport mechanism may not be fast enough, which may reduce the productivity of wafer processing. In contrast, by providing a common suction hand unit 4 that transports the wafer W1 in a predetermined direction between the plurality of modules 100a, the wafer W1 can be moved quickly between the plurality of modules 100a, thereby improving the productivity of wafer processing.

Furthermore, in the first embodiment, as described above, the length of the suction hand portion 4 can be changed in a predetermined direction according to the number of modules 100a selected from among the plurality of modules 100a and connected along the predetermined direction. This allows the length of the suction hand portion 4 to be appropriately changed according to an increase or decrease in the number of modules 100a, making it easy to realize a configuration in which a common suction hand portion 4 is provided among multiple modules 100a.

Furthermore, in the first embodiment, as described above, the module 100a includes a dicing module 1 for dicing the wafer W1 and an expandable module 2 for expanding the sheet member W2 to which the wafer W1 is attached. The first wafer W1 to be diced and the second wafer W1 to be expanded are supplied independently to the dicing module 1 and the expandable module 2, respectively, and the dicing of the first wafer W1 by the dicing module 1 and the expansion of the sheet member W2 of the second wafer W1 by the expandable module 2 are performed independently and in parallel. As a result, even if the cycle time for dicing and the cycle time for expanding are completely different, dicing and expanding can be performed smoothly without causing any downtime.

Furthermore, in the first embodiment, as described above, module 100a includes a dicing module 1 for dicing wafer W1, and dicing module 1 has an imaging unit 14 for imaging wafer W1. When repeatedly performing laser processing on a street St from one side of wafer W1 and performing laser processing on a street St from the other side of wafer W1, dicing module 1 is configured to image wafer W1 with the imaging unit 14, acquire the amount of positional displacement Am of street St due to laser processing based on the imaging result of wafer W1 by the imaging unit 14, and change the position of laser processing from one side to the other side or from the other side to the one side of wafer W1 based on the amount of positional displacement Am of street St. Furthermore, by changing the laser processing position from one side to the other or from the other side to the one side of the wafer W1 based on the street misalignment amount Am, the laser processing position can be changed at an effective timing when the street misalignment amount Am begins to increase, thereby reducing the number of times the street misalignment needs to be corrected.

[Second Embodiment]
Next, the semiconductor wafer processing apparatus 300 of the second embodiment will be described with reference to Figures 20 to 27. Note that the semiconductor wafer processing apparatus 300 is an example of the "wafer processing apparatus" in the claims. Also, components identical to those in the first embodiment are denoted by the same reference numerals, and their descriptions are omitted.

(Semiconductor wafer processing equipment)
As shown in Figures 20 and 21, the semiconductor wafer processing apparatus 300 is an apparatus for processing a wafer W1. In this second embodiment, the semiconductor wafer processing apparatus 300 includes modules 300a selected from a plurality of modules 300a that perform different types of processing on a wafer W1 on which a plurality of semiconductor chips Ch (see Figure 7) are formed. The semiconductor wafer processing apparatus 300 can change the number of each of the plurality of modules 300a.

Furthermore, in the second embodiment, the plurality of modules 300a include at least a wafer supply module 301 for supplying the wafer W1, a backgrind sheet member attachment module 302 for attaching the backgrind sheet member W4 to the wafer W1, a grinding module 303 for grinding the wafer W1, a polishing module 304 for polishing the wafer W1, a frame mount module 305 for attaching the dicing sheet member W5 to the wafer W1 and mounting the wafer W1 to the frame W6, and a dicing module 306 for dicing the wafer W1.

In the configuration example shown in Figure 20, the semiconductor wafer processing apparatus 300 includes one wafer supply module 301, one backgrind sheet attachment module 302, one grinding module 303, one polishing module 304, one frame mount module 305, and one dicing module 306. Each of the wafer supply module 301, the backgrind sheet attachment module 302, the grinding module 303, the polishing module 304, the frame mount module 305, and the dicing module 306 is an example of an "optional module" as defined in the claims. Furthermore, in the following, the wafer supply module 301, the backgrind sheet attachment module 302, the grinding module 303, the polishing module 304, the frame mount module 305, and the dicing module 306 may be referred to as an optional module.

The wafer supply module 301, the backgrind sheet attachment module 302, the grinding module 303, the polishing module 304, the frame mount module 305, and the dicing module 306 are arranged in this order from one side (X1 direction) to the other side (X2 direction) in a predetermined direction. Furthermore, the wafer supply module 301, the backgrind sheet attachment module 302, the grinding module 303, the polishing module 304, the frame mount module 305, and the dicing module 306 are connected along a predetermined direction (X direction). The wafer supply module 301 can have the same configuration as the wafer supply module 3 of the first embodiment. The dicing module 306 can have the same configuration as the dicing module 1 of the first embodiment. The wafer supply module 301 is also an example of the "work-in-progress storage unit" within the scope of the claims.

Furthermore, the semiconductor wafer processing apparatus 300 includes a wafer supply module 301, a backgrind sheet attachment module 302, a grinding module 303, a polishing module 304, a frame mount module 305, and a common wafer transport unit 307 that transports the wafer ring structure W (wafer W1) in a predetermined direction between these modules. The wafer transport unit 307 can have the same configuration as the suction hand unit 4 in the first embodiment described above.

Furthermore, the semiconductor wafer processing apparatus 300 includes a control unit 308 that controls the operation of the wafer transport unit 307. The control unit 308 includes a processor, such as a CPU, that executes programs, and a memory that stores programs.

Referring to Figures 20 and 21, the processing of a wafer W1 by the semiconductor wafer processing apparatus 300 with the configuration example shown in Figure 20 will be described. First, an unprocessed wafer W1 is taken out of the wafer supply module 301 and transported by the wafer transport unit 307 to the backgrind sheet member attachment module 302. Then, in the backgrind sheet member attachment module 302, the attachment unit attaches the backgrind sheet member W4 to the circuit formation surface of the wafer W1. Then, the wafer W1 with the backgrind sheet member W4 attached is transported by the wafer transport unit 307 from the backgrind sheet member attachment module 302 to the grinding module 303. Then, in the grinding module 303, the grinding unit grinds the wafer W1 from the non-circuit formation surface (the surface opposite to the surface to which the backgrind sheet member W4 is attached). As a result, the thickness of the wafer W1 is reduced to a predetermined thickness.

Next, the ground wafer W1 is transported by the wafer transport unit 307 from the grinding module 303 to the polishing module 304. In the polishing module 304, the polishing unit polishes the ground surface of the wafer W1. The polished wafer W1 is then transported by the wafer transport unit 307 from the polishing module 304 to the frame mount module 305. In the frame mount module 305, the mounting unit attaches the dicing sheet member W5 to the non-circuit-formed surface of the wafer W1 and mounts the wafer W1 to the frame W6 via the attached dicing sheet member W5. Also in the frame mount module 305, the peeling unit peels the backgrind sheet member W4 from the circuit-formed surface of the wafer W1. The dicing sheet member W5 and the frame W6 correspond to the sheet member W2 and the ring-shaped member W3 of the first embodiment, respectively, and the wafer W1 mounted on the frame W6 via the dicing sheet member W5 corresponds to the wafer ring structure W of the first embodiment.

The mounted wafer W1 is then transported from the frame mount module 305 to the dicing module 306 by the wafer transport unit 307. In the dicing module 306, a laser beam is irradiated from the dicing unit to form a modified layer inside the wafer W1 and perform the dicing process. The diced wafer W1 is then transported from the dicing module 306 to the wafer supply module 301 by the wafer transport unit 307.

Furthermore, the wafer supply module 301 receives unprocessed wafers W1 stored in wafer cassettes from an external source, and also supplies processed wafers W1 stored in wafer cassettes to an external source. The supply of wafers W1 from an external source to the wafer supply module 301 and the supply of wafers W1 from the wafer supply module 301 to an external source are performed by an operator or an overhead transport mechanism moving the wafers W1 (wafer cassettes). In the second embodiment, since there is only one wafer supply module 301, the operator or overhead transport mechanism only needs to access one wafer supply module 301 when moving the wafers W1. Therefore, the workload and working time for the operator or overhead transport mechanism can be reduced.

(Transportation of work-in-progress wafers)
In this case, when wafer W1 is processed by multiple selection modules (301-306), the selection module with the longest cycle time becomes the production bottleneck. In this case, production stagnates due to the bottleneck selection module, resulting in a decrease in equipment utilization.

Therefore, in the second embodiment, as shown in Figures 22 to 24, the wafer transport unit 307 is capable of transporting work-in-progress wafers W1 that have not yet been processed by any of the multiple selection modules in both directions (X1 direction) and the other direction (X2 direction) of a predetermined direction (X direction). Specifically, the wafer transport unit 307 is capable of transporting work-in-progress wafers W1 that have not yet been processed by any of the multiple selection modules in both directions (301 to 306) of a predetermined direction. In Figures 22 to 24 (and Figures 25 to 27), circles represent wafers W1, and arrows represent the movement of wafers W1.

Furthermore, in the second embodiment, the semiconductor wafer processing apparatus 300 is equipped with a work-in-progress storage unit for storing work-in-progress wafers W1. Specifically, the wafer supply module 301 also serves as the work-in-progress storage unit. While the unprocessed product is packaged as a wafer W1, the work-in-progress wafer W1 after mounting on the frame W6 is larger in shape because the wafer W1 is mounted on the frame W6. Therefore, the work-in-progress storage unit must accommodate not only a wafer W1 cassette corresponding to the size of the wafer W1, but also a frame W6 cassette corresponding to the size of the frame W6. In addition, the finished product after dicing is also stored in the frame W6 cassette of the work-in-progress storage unit.

Furthermore, in the second embodiment, as shown in Figure 23, the control unit 308 is configured to control the wafer transport unit 307 to transport the next wafer W1 to the wafer supply module 301 if the next wafer W1 cannot be transported to a predetermined selection module (306 in Figure 23) because a work-in-progress wafer W1 is being processed in one of the plurality of selection modules (301 to 306). In other words, the control unit 308 is configured to control the wafer transport unit 307 to return the next wafer W1 that can be supplied to the predetermined selection module (306 in Figure 23) back to the wafer supply module 301 when a work-in-progress wafer W1 is being processed in the predetermined selection module that is the bottleneck.

Furthermore, in the second embodiment, the semiconductor wafer processing apparatus 300 is configured to process multiple types (for example, three types) of wafers W1. The control unit 308 is configured to sequentially transport work-in-progress wafers of a predetermined type from the multiple types of wafers W1 to the wafer supply module 301. When processing of the predetermined number of wafers W1 to be processed by the selection modules upstream of the predetermined selection module (302 to 305 in Figure 23) is completed, the control unit 308 is configured to transport the next type of wafer W1 to the upstream selection module and start processing the next type of wafer W1.

Based on a specific example, we will explain the transport control of work-in-progress wafer W1.

Here, we will process three types of wafers W1: A, B, and C. The planned number of wafers and sizes for each of the three types of wafers W1 are shown in Table 1 below. Note that, in this context, "type of wafer W1" refers to the production variety (product).

Furthermore, the load time (processing time, cycle time) for each selected module is shown in Table 2 below. The load time for the process of attaching the backgrind sheet member W4 is proportional to the diameter of the wafer W1, and increases as the diameter of the wafer W1 increases. The load time for the process of grinding the wafer W1 is proportional to the amount of grinding of the wafer W1, and increases as the amount of grinding of the wafer W1 increases. The load time for the process of polishing the wafer W1 is proportional to the area of the wafer W1, and increases as the area of the wafer W1 increases. The load time for the process of mounting the wafer W1 to the frame W6 via the dicing sheet member W5 is a fixed time and is not proportional to the size of the wafer W1. The load time for the process of dicing the wafer W1 is proportional to the value obtained by dividing the area of the wafer W1 by the dimensions of the semiconductor chip Ch, and increases as this value increases.

As shown in Table 2, when processing wafer W1 of type A, the dicing module 306 becomes a bottleneck. When processing wafer W1 of type B, the backgrind sheet attachment module 302 becomes a bottleneck. When processing wafer W1 of type C, the grinding module 303 becomes a bottleneck. Furthermore, when processing all three types of wafer W1 (A, B, and C), the dicing module 306 used when processing wafer W1 of type A becomes the bottleneck.

Let's consider the case where wafer W1 is processed in the order of types A, C, and B. In this case, as shown in Figure 22, the first wafer W1 of type A is supplied from the wafer supply module 301, and processing is performed on the first wafer W1 of type A in the following order: backgrind sheet attachment module 302, grinding module 303, polishing module 304, frame mount module 305, and dicing module 306.

Then, as shown in Figure 23, the second wafer W1 of type A is supplied from the wafer supply module 301, and processing is performed on the second wafer W1 of type A in the following order: backgrind sheet attachment module 302, grinding module 303, polishing module 304, and frame mount module 305. However, since the work-in-progress of the first wafer W1 of type A is being processed in the dicing module 306, the work-in-progress of the second wafer W1 of type A cannot be transported to the dicing module 306. In this case, the work-in-progress of the second wafer W1 of type A, which has not yet been processed in the dicing module 306, is transported to the wafer supply module 301 by the wafer transport unit 307. The same applies to the work-in-progress of the third and subsequent wafers W1 of type A. As a result, wafers of type A W1, in which the processing of the backgrind sheet attachment module 302, grinding module 303, polishing module 304, and frame mount module 305 has been completed, and the processing of the dicing module 306 is not yet completed, gradually accumulate in the wafer supply module 301.

Furthermore, once processing of the first wafer W1 of type A is completed in the dicing module 306, the first wafer W1 of type A, with all processing completed, is transported from the dicing module 306 to the wafer supply module 301 by the wafer transport unit 307. Then, the work-in-progress of the second wafer W1 of type A stored in the wafer supply module 301 is transported to the dicing module 306 by the wafer transport unit 307. Then, processing of the second wafer W1 of type A is completed in the dicing module 306. The same process is followed for the work-in-progress of the third and subsequent wafers W1 of type A. As a result, wafers W1 of type A with all processing completed gradually accumulate in the wafer supply module 301.

Furthermore, if the difference between the total load time from the backgrind sheet attachment module 302 to the grinding module 303, polishing module 304, and frame mount module 305, and the load time of the bottleneck dicing module 306, does not exceed the round-trip transport time required to return the wafer W1 from the frame mount module 305 to the wafer supply module 301 and then transport the wafer W1 from the wafer supply module 301 to the dicing module 306, then no improvement in equipment utilization rate can be expected by transporting the work-in-progress wafer W1 back and forth. For this reason, control is performed to transport the work-in-progress wafer W1 back and forth only when the difference in load time exceeds the round-trip transport time. Also, if the difference in load time does not exceed the round-trip transport time, the work-in-progress wafer W1 waits in the frame mount module 305 for the processing of the work-in-progress wafer W1 in the dicing module 306 to be completed.

Furthermore, as the work-in-progress wafers W1 of type A are sequentially transported to the wafer supply module 301, the processing of the backgrind sheet material attachment module 302 is completed for the number of wafers W1 of type A scheduled for processing. Since there are no more wafers W1 of type A to supply to the backgrind sheet material attachment module 302, as shown in Figure 24, the wafers W1 of type C scheduled for processing next are transported from the wafer supply module 301 to the backgrind sheet material attachment module 302 by the wafer transport unit 307. This allows the processing of wafers W1 of type C to begin in parallel with the processing of wafers W1 of type A. The wafers W1 of type C are then transported and processed in the same manner as wafers W1 of type A. The same process applies to wafers W1 of type B.

The processing of three types of wafers W1, A, B, and C, will be explained with reference to time. For the sake of ease of understanding, round-trip transport time will not be considered, but assuming the start time of production is 0 seconds, the following occurs. That is, the time when the first wafer W1 of type A reaches the dicing module 306 is 100 seconds + 55 seconds + 88 seconds + 60 seconds = 303 seconds. After that, 353 seconds × 15 wafers = 5295 seconds have elapsed, and at 303 seconds + 5295 seconds = 5598 seconds, the processing of the planned number of wafers (15 wafers) of type A W1 is completed.

Furthermore, the time at which the processing of the backgrind sheet material attachment module 302 is completed for the planned number of wafers W1 of type A is 100 seconds × 15 wafers = 1500 seconds. That is, the time at which processing of the backgrind sheet material attachment module 302 can be started for the first wafer W1 of type C is 1500 seconds. Then, the time at which processing up to the frame mount module 305 is completed for the first wafer W1 of type C is 1500 seconds + 67 seconds + 145 seconds + 39 seconds + 60 seconds = 1811 seconds. After that, processing up to the frame mount module 305 is completed for wafer W1 of type C every 145 seconds. Therefore, at 1811 seconds + 145 seconds × 7 wafers = 2926 seconds, processing up to the frame mount module 305 is completed for the planned number of wafers W1 of type C (8 wafers). Up to 5598 seconds, the dicing module 306 is processing wafers of type A W1, so wafers of type C W1 cannot be transported to the dicing module 306. Therefore, wafers of type C W1 that have been processed up to the frame mount module 305 are transported to the wafer supply module 301 by the wafer transport unit 307.

Furthermore, the time at which the processing of the backgrind sheet material attachment module 302 is completed for the planned number of Type C wafers W1 is 1500 seconds + 67 seconds × 8 wafers = 2036 seconds. In other words, the time at which processing of the backgrind sheet material attachment module 302 can be started for the first Type B wafer W1 is 2036 seconds. Then, the time at which processing up to the frame mount module 305 is completed for the first Type B wafer W1 is 2036 seconds + 100 seconds + 55 seconds + 88 seconds + 60 seconds = 2339 seconds. After that, processing up to the frame mount module 305 is completed for Type B wafers W1 every 100 seconds. Therefore, at 2339 seconds + 100 seconds × 24 wafers = 4739 seconds, processing up to the frame mount module 305 is completed for the planned number of Type B wafers W1 (25 wafers). Up until 5598 seconds, the dicing module 306 is processing wafers of type A W1, so wafers of type B W1 cannot be transported to the dicing module 306. Therefore, wafers of type B W1 that have been processed up to the frame mount module 305 are transported to the wafer supply module 301 by the wafer transport unit 307.

Furthermore, processing of wafer W1 of type C can be started by the dicing module 306 from 5598 seconds. Therefore, the time at which processing of wafer W1 of type C is completed by the dicing module 306 is 5598 seconds + 39 seconds × 8 wafers = 5910 seconds.

Furthermore, processing of wafers W1 of type B can be started by the dicing module 306 from 5910 seconds. Therefore, the time at which processing of wafers W1 of type B is completed by the dicing module 306 is 5910 seconds + 47 seconds × 25 wafers = 7085 seconds.

As described above, by transporting the work-in-progress wafer W1 back and forth, the dicing module 306 can be kept running without stopping (operated at full capacity) even during the processing of wafers W1 of types B and C, which are not bottlenecks. On the other hand, if the wafers W1 are processed in the order of types A, C, and B without transporting the work-in-progress wafer W1 back and forth, there will be times when the dicing module 306 stops during the processing of wafers W1 of types B and C, which will reduce the operating rate of the dicing module 306.

(Adjusting the number of modules)
This section describes the adjustment of the number of modules in the semiconductor wafer processing apparatus 300.

For example, in the processing of wafer W1 of type A, the processing time using the frame-mount module 305 is the shortest, at 60 seconds. Therefore, by increasing the number of selected modules other than the frame-mount module 305 so that the load time for those modules is 60 seconds or less, it is possible to shorten the processing time (required time) for wafer W1 of type A.

Furthermore, productivity can be further increased by increasing the number of selection modules to shorten the processing time for multiple types of wafers W1, rather than increasing the number of selection modules to shorten the processing time for a specific type of wafer W1. Therefore, a weighted average load time is obtained by weighting the processing time for each of the multiple types of wafers W1 by the planned number of wafers to be processed, and the number of selection modules is determined based on this weighted average load time. Specifically, the weighted average load time is obtained for each of the multiple selection modules, the minimum weighted average load time is extracted from the multiple weighted average load times obtained, and the number of selection modules is determined so that the multiple weighted average load times obtained are less than or equal to the extracted minimum weighted average load time. This allows the number of selection modules to be determined in a way that shortens the processing time for multiple types of wafers W1, thus further increasing productivity.

Table 3 below shows the loading time in each selected module and the weighted average loading time obtained from the loading times in each selected module for wafers W1 of types A, B, and C. The weighted average loading time is the average value obtained by weighting the loading time of each of the multiple types of wafers W1 according to the number of wafers to be processed. For example, in the application of backgrind sheet members, the weighted average loading time is (100 seconds × 15 wafers + 100 seconds × 25 wafers + 67 seconds × 8 wafers) / (15 wafers + 25 wafers + 8 wafers) = 94 seconds.

Furthermore, Table 4 below shows the number of selected modules calculated from the load time for each selected module and the number of selected modules calculated from the weighted average load time. The number of selected modules is the closest integer value obtained by dividing the load time by the minimum load time. For example, in the application of the backgrind sheet member to wafer W1 of type A, the number of selected modules is (100 seconds / 55 seconds) = 1.8, so the closest integer value to 1.8 is 2.

Furthermore, the load times for the selected module configurations shown in Table 4 are shown in Table 5 below. The load time is the value obtained by dividing the load time shown in Table 3 by the number of modules shown in Table 4. For example, when focusing on wafer W1 of type A and increasing the number of modules, the load time for attaching the backgrind sheet member to wafer W1 of type A becomes (100 seconds / 2 units) = 50 seconds.

Table 5 also shows the processing time (required time) for wafers W1 of types A, B, and C. Except for the required time in the bottom column of Table 5, the required time is for processing wafers W1 using a conventional method that does not involve the reciprocating transport of the work-in-progress wafers W1. The required time in the bottom column of Table 5 is for processing wafers W1 using the method of the second embodiment, which involves the reciprocating transport of the work-in-progress wafers W1. In the conventional method, the required time was calculated by multiplying the load time (maximum load time) of the bottleneck selection module by the number of wafers to be processed, determining this value for each of the wafers W1 of types A, B, and C, and then summing these values. For example, if the optimal configuration is used for wafer W1 of type A, the required time would be 55 seconds × 15 wafers + 55 seconds × 25 wafers + 145 seconds × 8 wafers = 3360 seconds. Furthermore, in the method of the second embodiment, the required time was calculated by multiplying the maximum weighted average loading time by the total number of wafers W1 of types A, B, and C that were to be processed. That is, the required time was 60 seconds × (15 wafers + 25 wafers + 8 wafers) = 2880 seconds.

As can be seen from Table 5, the required time for processing wafer W1 is minimized when using the method of the second embodiment, in which the number of selected modules is determined based on the weighted average load time and the work-in-progress wafer W1 is transported back and forth. In other words, the required time for processing wafer W1 can be effectively reduced when using the method of the second embodiment, in which the number of selected modules is determined based on the weighted average load time and the work-in-progress wafer W1 is transported back and forth. As a result, productivity can be further increased.

(Operation of selected modules)
The operation of the selection module of the semiconductor wafer processing apparatus 300 will be explained with reference to Figures 25 to 27.

In the second embodiment, as shown in Figures 22 to 26, the semiconductor wafer processing apparatus 300 can specify which of the processing methods of the multiple selection modules (302 to 306) should be performed for each of the multiple types of wafers W1, and can process multiple types of wafers W1 in parallel using the multiple selection modules. Furthermore, by specifying which of the processing methods of the multiple selection modules should be performed for each of the multiple types of wafers W1, the semiconductor wafer processing apparatus 300 can operate at least one of the multiple selection modules independently.

For example, if the same type of wafer W1 is assigned to all of the multiple selection modules (302 to 306) (as shown in Figures 22 to 24), the multiple selection modules can function as a line-type system that sequentially executes processing on the wafer W1. Alternatively, if different types of wafer W1 are assigned to each of the multiple selection modules (as shown in Figure 25), each of the multiple selection modules can function as a standalone system that independently executes processing on the wafer W1. Furthermore, if the same type of wafer W1 is assigned to some of the multiple selection modules, and different types of wafer W1 are assigned to the remaining some (as shown in Figure 26), the multiple selection modules can function as a system that combines line-type and standalone systems.

In the examples shown in Figures 22 to 24, wafers W1 of types A, B, and C are assigned to the backgrind sheet attachment module 302, the grinding module 303, the polishing module 304, the frame mount module 305, and the dicing module 306. In this case, the backgrind sheet attachment module 302, the grinding module 303, the polishing module 304, the frame mount module 305, and the dicing module 306 function as a line-type equipment.

In the example shown in Figure 25, a wafer of type D W1 is assigned to the backgrind sheet attachment module 302. A wafer of type E W1 is assigned to the grinding module 303. A wafer of type F W1 is assigned to the polishing module 304. A wafer of type G W1 is assigned to the frame mount module 305. A wafer of type H W1 is assigned to the dicing module 306. In this case, the backgrind sheet attachment module 302, the grinding module 303, the polishing module 304, the frame mount module 305, and the dicing module 306 each function as standalone equipment. Furthermore, the processing of wafers W1 of type D by the backgrind sheet attachment module 302, the processing of wafers W1 of type E by the grinding module 303, the processing of wafers W1 of type F by the polishing module 304, the processing of wafers W1 of type G by the frame mount module 305, and the processing of wafers W1 of type H by the dicing module 306 are performed in parallel.

In the example shown in Figure 26, wafer W1 of type I is assigned to the backgrind sheet attachment module 302, the grinding module 303, and the polishing module 304. Wafer W1 of type J is assigned to the frame mount module 305. Wafer W1 of type K is assigned to the dicing module 306. In this case, the backgrind sheet attachment module 302, the grinding module 303, and the polishing module 304 function as line-type equipment. The frame mount module 305 and the dicing module 306 each function as standalone equipment. Furthermore, the processing of wafer W1 of type I by the backgrind sheet attachment module 302, the grinding module 303, and the polishing module 304, the processing of wafer W1 of type J by the frame mount module 305, and the processing of wafer W1 of type K by the dicing module 306 are performed in parallel.

Furthermore, as described above, the time at which the first wafer of type A W1 reached the dicing module 306 was 303 seconds. Therefore, as shown in Figure 27, the dicing module 306 may be allowed to process the wafer of type L W1 until the time the first wafer of type A W1 reaches the dicing module 306. In this case, the wafer of type L W1 is assigned to the dicing module 306, and the dicing module 306 functions as a standalone device until the time the first wafer of type A W1 reaches the dicing module 306.

(Effects of the second embodiment)
In the second embodiment, the following effects can be obtained.

In the second embodiment, as described above, the semiconductor wafer processing apparatus 300 can change the number of each of the multiple modules 300a. This allows for the construction of an optimal equipment configuration even when the optimal equipment configuration differs depending on the product or user requirements, similar to the first embodiment.

Furthermore, in the second embodiment, as described above, the modules 300a are connected along a predetermined direction, and the semiconductor wafer processing apparatus 300 includes a common wafer transport unit 307 that transports the wafer W1 in a predetermined direction between a plurality of selected modules (301 to 306) selected from the plurality of modules 300a. The wafer transport unit 307 is capable of transporting work-in-progress wafers W1 that have not yet been processed by any of the plurality of selected modules in both one direction and the other direction of the predetermined direction between the plurality of selected modules. Here, when processing the wafer W1 with a plurality of selected modules, the selected module with the longest cycle time among the plurality of selected modules becomes the production bottleneck. In this case, production stagnates due to the bottleneck selected module, and the operating rate of the equipment decreases. Therefore, if the wafer transport unit 307 is configured to be capable of transporting work-in-progress wafers W1 as described above, the wafer transport unit 307 can move the work-in-progress wafers W1, thus allowing production to continue. As a result, it is possible to suppress production stagnation caused by selection modules that become production bottlenecks, thereby improving the utilization rate of equipment.

Furthermore, in the second embodiment, as described above, the semiconductor wafer processing apparatus 300 includes a work-in-progress storage unit (300) for storing work-in-progress wafers W1. This allows work-in-progress wafers W1 to be stored in the work-in-progress storage unit, making it easy to continue production. As a result, production stagnation caused by selection modules, which become production bottlenecks, can be easily suppressed, thus easily improving the operating rate of the equipment.

Furthermore, in the second embodiment, as described above, module 300a includes a wafer supply module 301 for supplying wafers W1, and the wafer supply module 301 also serves as a work-in-progress storage unit. This allows for the effective use of the wafer supply module 301 to store work-in-progress wafers W1. Unlike the case where only a dedicated work-in-progress storage unit is provided, this method improves the equipment's operating rate while suppressing complexity in the equipment configuration.

Furthermore, in the second embodiment, as described above, the semiconductor wafer processing apparatus 300 includes a control unit 308 that controls the operation of the wafer transport unit 307. The control unit 308 is configured to control the wafer transport unit 307 to transport the next wafer W1 work-in-progress to the wafer supply module 301 if the next wafer W1 work-in-progress cannot be transported to a predetermined selection module (for example, 306) because a work-in-progress wafer W1 is being processed in one of the plurality of selection modules (301 to 306). This makes it possible to move the next wafer W1 work-in-progress that cannot be transported to the predetermined selection module to the work-in-progress storage unit when the predetermined selection module becomes a production bottleneck, thereby easily suppressing production stagnation caused by the predetermined selection module becoming a production bottleneck. As a result, the operating rate of the equipment can be easily improved.

Furthermore, in the second embodiment, as described above, the semiconductor wafer processing apparatus 300 is configured to process multiple types of wafers W1. The control unit 308 sequentially transports work-in-progress of a predetermined type of wafer W1 from the multiple types of wafers W1 to the wafer supply module 301. When processing of the predetermined number of wafers W1 to be processed by the selection modules upstream of a predetermined selection module (for example, 302 to 305) is completed, the control unit 308 is configured to transport the next type of wafer W1 to the upstream selection module and start processing of the next type of wafer W1. This prevents production from stalling for the next type of wafer W1 due to a bottleneck in the predetermined type of wafer W1. As a result, the operating rate of the equipment can be improved when processing multiple types of wafers W1.

Furthermore, in the second embodiment, as described above, the semiconductor wafer processing apparatus 300 is configured to process multiple types of wafers W1, and it is possible to specify which of the processing methods of multiple selection modules (302 to 306) should be performed for each of the multiple types of wafers W1, and it is possible to process multiple types of wafers W1 in parallel using multiple selection modules. As a result, if the same type of wafer W1 is assigned to all of the multiple selection modules, the multiple selection modules can be made to function as a line-type system that executes processing on the wafers W1 sequentially. Also, if different types of wafers W1 are assigned to each of the multiple selection modules, each of the multiple selection modules can be made to function as a standalone system that executes processing on the wafers W1 independently. Furthermore, the multiple selection modules can be made to function as a system that combines line-type and standalone systems. As a result, the user can make the multiple selection modules function as a system suitable for the production plan from among line-type systems, standalone systems, and systems that combine line-type and standalone systems. Note that a line-type system is suitable for wafers W1 that are processed frequently. Furthermore, standalone equipment is suitable for types of wafers W1 that are not processed frequently (such as rare types of wafers W1 or small batches of wafers W1).

Furthermore, in the second embodiment, as described above, by specifying which of the multiple selection modules (302-306) to perform for each of the multiple types of wafers W1, it is possible to operate at least one of the multiple selection modules independently. This makes it easy to make at least one of the multiple selection modules function as a standalone device.

Furthermore, the other effects of the second embodiment are the same as those of the first embodiment described above.

[Variations]
It should be noted that the embodiments disclosed herein are illustrative and not restrictive in all respects. The scope of the present invention is indicated by the claims rather than by the description of the embodiments above, and further includes all modifications (exceptions) within the meaning and scope of the claims.

For example, the first embodiment described above shows an example where the squeegee portion is located inside the expand ring, but the present invention is not limited thereto. For example, the modified expand module 402 shown in Figures 28 to 30 includes a base 205, a cold air supply unit 206, a cooling unit 207, an expand portion 3208, a base 209, an expansion and maintenance member 210, a heat shrink portion 211, an ultraviolet irradiation portion 212, a squeegee portion 3213, and a clamp portion 214.

<Expanded section>
The expanded portion 3208 is configured to divide the wafer W1 along the dividing line by expanding the sheet member W2 of the wafer ring structure W.

Specifically, the expanded section 3208 includes an expanded ring 3281 and a Z-direction movement mechanism 3282.

The expanding ring 3281 is configured to expand the sheet member W2 by supporting it from the Z2 direction. The expanding ring 3281 has a ring shape in plan view. The Z-direction moving mechanism 3282 is configured to move the expanding ring 3281 in the Z1 direction or the Z2 direction. The Z-direction moving mechanism 3282 has, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder. The Z-direction moving mechanism 3282 is mounted on the base 205.

<Squeegee section>
The squeegee portion 3213 is configured to further divide the wafer W1 along the modified layer by pressing the wafer W1 from the Z2 direction side after expanding the sheet member W2. Specifically, the squeegee portion 3213 has a pressing portion 3213a, an X-direction moving mechanism 3213b, a Z-direction moving mechanism 3213c, and a rotation mechanism 3213d.

The pressing portion 3213a is configured to generate bending stress in the wafer W1 and split along the modified layer by moving it with the X-direction movement mechanism 3213b while pressing the wafer W1 from the Z2 direction side via the sheet member W2, after being positioned at an angle by the rotation mechanism 3213d and then moved with the Z-direction movement mechanism 3213c. The pressing portion 3213a is a squeegee. The pressing portion 3213a is attached to the Z1 direction end of the rotation mechanism 3213d. The Z-direction movement mechanism 3213c is configured to move the rotation mechanism 3213d in the Z1 or Z2 direction. The Z-direction movement mechanism 3213c has, for example, a cylinder. The Z-direction movement mechanism 3213c is attached to the Z1 direction end of the X-direction movement mechanism 3213b. The X-direction movement mechanism 3213b includes, for example, a linear conveyor module or a drive unit having a ball screw and a motor with an encoder. The X-direction movement mechanism 3213b is attached to the Z1-direction end of the base 205.

In the squeegee section 3213, the angle is first adjusted by the rotation mechanism 3213d, then it moves in the Z1 direction by the Z direction movement mechanism 3213c, and while the pressing section 3213a presses the wafer W1 from the Z2 direction side via the sheet member W2, the pressing section 3213a moves in the Y direction by the X direction movement mechanism 3213b, thereby splitting the wafer W1. Also, in the squeegee section 3213, after the movement of the pressing section 3213a in the Y direction is completed, the pressing section 3213a descends to the lowered position, and the pressing section 3213a rotates 90 degrees by the rotation mechanism 3213d. Furthermore, in the squeegee portion 3213, after the pressing portion 3213a rotates 90 degrees, it moves again in the Z1 direction by the Z direction movement mechanism 3213c, and the pressing portion 3213a presses the wafer W1 from the Z2 direction side via the sheet member W2, while the pressing portion 3213a moves in the X direction by the X direction movement mechanism 3213b, thereby splitting the wafer W1.

Furthermore, while the first embodiment described above shows an example in which the module includes a dicing module, an expandable module, and a wafer supply module, and the second embodiment described above shows an example in which the module includes a wafer supply module, a backgrind sheet attachment module, a grinding module, a polishing module, a frame mount module, and a dicing module, the present invention is not limited thereto. In the present invention, the module may include at least one of the following: a dicing module, an expandable module, a wafer supply module, an ablation laser module for laser ablation of a wafer, a cleaning module for cleaning a wafer, a grinding module, a backgrind sheet attachment module, a polishing module, and a frame mount module. This allows the number of at least one of the following to be changed according to the product and user requirements.

The ablation laser module is configured to perform laser ablation, which melts and sublimes the surface of a wafer by irradiating it with laser light from a laser irradiation unit. The cleaning module is configured to clean the surface of the wafer by supplying cleaning solution from a cleaning solution supply unit.

Furthermore, although the above embodiment shows an example in which a semiconductor wafer processing apparatus processes a wafer of a wafer ring structure provided with a ring-shaped member, the present invention is not limited thereto. In the present invention, the semiconductor wafer processing apparatus may also process a wafer of a wafer structure (a structure including only a wafer and a sheet member) that does not have a ring-shaped member.

Furthermore, while the first embodiment described above shows an example where two or more modules of the same type can be arranged, the present invention is not limited to this. In the present invention, it may be possible to arrange only one module of the same type.

Furthermore, in this invention, the number of dicing modules, expandable modules, wafer supply modules, ablation laser modules, cleaning modules, grinding modules, backgrind sheet member attachment modules, polishing modules, and frame mount modules may vary.

Furthermore, while the first and second embodiments described above show examples where the wafer transport unit is common to all modules, the present invention is not limited to this. In the present invention, the wafer transport unit may be provided for each module.

Furthermore, while the first and second embodiments described above show examples in which the wafer transport unit is composed of a suction hand unit, the present invention is not limited thereto. In the present invention, the wafer transport unit may be composed of wafer transport units other than the suction hand unit.

Furthermore, while the first and second embodiments described above show examples in which modules are connected along a predetermined direction, the present invention is not limited thereto. In the present invention, modules may be connected along a predetermined direction and a direction perpendicular to the predetermined direction.

Furthermore, while the second embodiment described above shows an example where the wafer supply module also serves as a work-in-progress storage unit, the present invention is not limited to this. In the present invention, a work-in-progress storage unit may be provided independently of the wafer supply module. In the modified example shown in Figure 31, two work-in-progress storage units 309 are provided independently of the wafer supply module 301. Unlike the wafer supply module 301, which stores both unprocessed and processed wafers W1, the work-in-progress storage units 309 are configured to store only work-in-progress wafers W1. The work-in-progress storage units 309 are also provided within a range from which the wafer transport unit 307 can transport the wafers W1. By providing the work-in-progress storage units 309, the capacity for storing work-in-progress wafers W1 can be increased. In addition, compared to the case where work-in-progress wafers W1 are transported back and forth between the wafer supply module 301 and the work-in-progress wafers W1, the distance over which work-in-progress wafers W1 are transported back and forth can be shortened, thus reducing the time required for the back-and-forth transport of work-in-progress wafers W1. The work-in-progress storage section 309 may be provided as one or more units.

Furthermore, in the first embodiment described above, for the sake of explanation, an example was shown in which the control process was explained using a flow-driven flowchart that processes sequentially according to the processing flow, but the present invention is not limited to this. In the present invention, the control process may be performed by an event-driven process that executes processing on an event-by-event basis. In this case, it may be performed as a completely event-driven process, or a combination of event-driven and flow-driven processes may be used.

1. Dicing module 2. Expanding module 3. Wafer supply module 4. Suction hand unit (wafer transport unit)
14. Imaging Unit 100, 300 Semiconductor wafer processing equipment (wafer processing equipment)
100a, 300a Module 301 Wafer Supply Module (Work-in-Progress Storage Section)
302 Backgrind sheet material attachment module (selectable module)
303 Grinding Module (Selectable Module)
304 Polishing Module (Selection Module)
305 Frame Mount Module (Optional Module)
306 Dicing Module (Selection Module)
307 Wafer transport section 308 Control section 309 Work-in-progress storage section Am Positional displacement Ch Semiconductor chip St Street W1 Wafer (first wafer, second wafer)
W2 Sheet material (dicing sheet material)
W4 Backgrind sheet member W5 Dicing sheet member W6 Frame

Claims (15)

The wafer on which multiple semiconductor chips are formed comprises a module selected from among multiple modules that perform different types of processing on each other,
The number of each of the aforementioned modules can be changed ,
The system further includes a common wafer transport unit that transports the wafer between a plurality of selected modules chosen from the plurality of modules,
The aforementioned selection modules are connected along a predetermined direction,
The wafer transport unit is capable of transporting the work-in-progress wafers that have not yet been processed by any of the plurality of selection modules in both the one direction and the other direction of the predetermined direction.
The selection module includes a wafer supply module that supplies the wafer,
The wafer processing apparatus is characterized in that the wafer supply module also serves as a work-in-progress storage unit for storing the wafers in progress . The wafer processing apparatus according to claim 1 , wherein the wafer transport unit is capable of transporting work-in-progress wafers that have not yet been processed by any of the plurality of selection modules in both directions of the predetermined direction and the other direction between the plurality of selection modules. The system further includes a control unit that controls the operation of the wafer transport unit,
The wafer processing apparatus according to claim 1, wherein the control unit is configured to control the wafer transport unit to transport the next wafer to the wafer to the wafer to be to transport It is configured to process multiple types of wafers,
The wafer processing apparatus according to claim 3, wherein the control unit is configured to sequentially transport work-in-progress wafers of a predetermined type from among the plurality of types of wafers to the work-in-progress storage unit, and when processing of the predetermined number of wafers of the predetermined type by the selection module upstream of the predetermined selection module is completed, the control unit is configured to transport the next type of wafer of the predetermined type to the upstream selection module and start processing of the next type of wafer. It is configured to process multiple types of wafers,
A wafer processing apparatus according to claim 1 or 2, wherein it is possible to specify which of the processing processes of the plurality of selection modules to perform on each of the plurality of types of wafers, and the processing of the plurality of types of wafers by the plurality of selection modules can be performed in parallel. The wafer processing apparatus according to claim 5, wherein it is possible to operate at least one of the plurality of selection modules independently by specifying which of the processing operations of the plurality of selection modules to perform for each of the plurality of types of wafers. The aforementioned multiple modules are
A dicing module for dicing the wafer,
An expand module for expanding a dicing sheet member to which the wafer is attached ,
an ablation laser module for laser ablation of the wafer,
A cleaning module for cleaning the wafer,
A grinding module for grinding the wafer,
A backgrind sheet attachment module for attaching a backgrind sheet member to the wafer,
A polishing module for polishing the aforementioned wafer,
A frame mount module for attaching the dicing sheet member to the wafer and mounting the wafer to a frame,
A wafer processing apparatus according to claim 1, comprising at least one of the following. The wafer processing apparatus according to claim 1, wherein two or more modules of the same type can be arranged. The wafer processing apparatus according to claim 8 , wherein modules of the same type can be arranged on one side and the other side with other types of modules in between. The wafer processing apparatus according to claim 1, wherein the modules are connected along the predetermined direction. The wafer processing apparatus according to claim 10, wherein the wafer transport section is capable of changing the length in the predetermined direction according to the number of modules selected from the plurality of modules and connected along the predetermined direction. The module includes a dicing module for dicing the wafer and an expanding module for expanding the dicing sheet member to which the wafer is attached.
The wafer processing apparatus according to claim 1, wherein a first wafer to be diced and a second wafer to be expanded are supplied independently to the dicing module and the expanding module, respectively, and the dicing of the first wafer by the dicing module and the expansion of the dicing sheet member of the second wafer by the expanding module are performed independently and in parallel. The module includes a dicing module for dicing the wafer,
The dicing module has an imaging unit for imaging the wafer,
The dicing module is,
When repeatedly performing laser processing on a street from one side of the wafer and then performing laser processing on the street from the other side of the wafer,
The imaging unit images the wafer,
Based on the imaging results of the wafer by the imaging unit, the amount of positional displacement of the street due to laser processing is obtained.
Based on the displacement of the aforementioned street, the laser processing position is changed from one side of the wafer to the other side or from the other side to the one side.
A wafer processing apparatus according to claim 1, configured as described above. A process of installing selected modules from among multiple modules that perform different types of processing on a wafer on which multiple semiconductor chips are formed,
The process includes a step of processing the wafer using the installed module,
The number of each of the aforementioned modules can be changed ,
The system further includes a common wafer transport unit that transports the wafer between a plurality of selected modules chosen from the plurality of modules,
The aforementioned selection modules are connected along a predetermined direction,
The wafer transport unit is capable of transporting the work-in-progress wafers that have not yet been processed by any of the plurality of selection modules in both the one direction and the other direction of the predetermined direction.
The selection module includes a wafer supply module that supplies the wafer,
A semiconductor chip manufacturing method , wherein the wafer supply module also serves as a work-in-progress storage unit for storing the wafers in progress . A semiconductor chip manufactured by a wafer processing apparatus comprising a module selected from a plurality of modules that perform different types of processing on a wafer on which a plurality of semiconductor chips are formed, the number of each of the plurality of modules is changeable, and the apparatus further comprises a common wafer transport unit for transporting the wafer between the plurality of selected modules, the plurality of selected modules being connected along a predetermined direction, the wafer transport unit being able to transport work-in-progress wafers that have not been processed by any of the plurality of selected modules in both one direction and the other direction of the predetermined direction, and the selected module includes a wafer supply module for supplying the wafers, the wafer supply module also serving as a work-in-progress storage unit for storing the work-in-progress wafers.