Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPS5813017B2 - condenser no seizouhouhou - Google Patents
[go: Go Back, main page]

JPS5813017B2 - condenser no seizouhouhou - Google Patents

condenser no seizouhouhou

Info

Publication number
JPS5813017B2
JPS5813017B2 JP50079787A JP7978775A JPS5813017B2 JP S5813017 B2 JPS5813017 B2 JP S5813017B2 JP 50079787 A JP50079787 A JP 50079787A JP 7978775 A JP7978775 A JP 7978775A JP S5813017 B2 JPS5813017 B2 JP S5813017B2
Authority
JP
Japan
Prior art keywords
voltage
capacitor
current
forming
withstand
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50079787A
Other languages
Japanese (ja)
Other versions
JPS523152A (en
Inventor
能勢忠司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
New Nippon Electric Co Ltd
Original Assignee
New Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by New Nippon Electric Co Ltd filed Critical New Nippon Electric Co Ltd
Priority to JP50079787A priority Critical patent/JPS5813017B2/en
Publication of JPS523152A publication Critical patent/JPS523152A/en
Publication of JPS5813017B2 publication Critical patent/JPS5813017B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Description

【発明の詳細な説明】 この発明はコンデンサの製造方法に関し、特にコンデン
サペレットの再化成方法の改良に関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a capacitor, and more particularly to an improvement in a method for reforming capacitor pellets.

一般にこの種コンデンサは例えばタンタル、チタンなど
のように弁作用を有する金属粉末を円柱状に加圧成形し
、焼結してなるコンデンサペレットの表面に、化成処理
により誘電体層としての絶縁層を形成し、然る後、絶縁
層上に半導体層を熱分解によって形成する操作を複数回
繰り返して形成されている。
In general, this type of capacitor is made by press-molding metal powder with valve action, such as tantalum or titanium, into a cylindrical shape and sintering it. An insulating layer as a dielectric layer is formed on the surface of the capacitor pellet by chemical conversion treatment. The semiconductor layer is then formed on the insulating layer by thermal decomposition, which is repeated several times.

ところが、この分解工程時に絶縁層である酸化皮膜層が
熱的ストレス等によって劣化して絶縁耐力が落ちる傾向
にある。
However, during this decomposition process, the oxide film layer, which is an insulating layer, tends to deteriorate due to thermal stress and the like, resulting in a decrease in dielectric strength.

そこで分解工程毎ないしは後にこの絶縁層を修復する目
的で再化成を数回行なっている。
Therefore, re-forming is performed several times in order to repair the insulating layer after each decomposition process or after the decomposition process.

この再化或は次の様にして行なわれている。This regeneration is carried out as follows.

即ち、例えば化成において用いられたH3P04又はH
2SO4を化成時よりやや濃度を低くして電解液とする
That is, for example, H3P04 or H used in chemical synthesis
The concentration of 2SO4 is made slightly lower than that at the time of chemical formation and used as an electrolytic solution.

そして、これを満たした電解液槽に分解工程の途中又は
後のコンデンサペレットを浸漬し、このコンデンサペレ
ットに直流電流を流して行なっている。
Then, the capacitor pellets are immersed in the electrolytic solution tank filled with this during or after the decomposition process, and a direct current is passed through the capacitor pellets.

そして、従来この再化或は再化成を行なおうとするコン
デンサの予定されている耐圧に準じた定電圧を印加して
行なわれていた。
Conventionally, this reconstitution or reconstitution has been carried out by applying a constant voltage according to the expected withstand voltage of the capacitor to be reconstituted.

ところが、この方法であるとコンデンサに急激に電圧が
印加されるので、絶縁層が修復されずに一挙に破壊され
ることがあった。
However, with this method, voltage is rapidly applied to the capacitor, so the insulating layer may not be repaired and may be destroyed all at once.

そこで、印加直後から徐々に電圧を上昇させる電圧印加
方法も行なわれている。
Therefore, a voltage application method is also used in which the voltage is gradually increased immediately after application.

しかし、倒れにせよ、このような定電圧印加にて行なう
方法では、設定電圧が低い場合には低い耐電圧にしか修
復できない。
However, even if it falls down, with this method of applying a constant voltage, if the set voltage is low, it can only be restored to a low withstand voltage.

かといって、設定電圧を高めれば、修復不充分のコンデ
ンサでは修復電流を超える多犬な電流が流れて破壊する
ことになっていた。
On the other hand, if the set voltage was increased, a large current exceeding the repair current would flow in a capacitor that had not been sufficiently repaired, causing it to be destroyed.

又、更に電圧を上昇させて修復電流を流せば高い耐圧の
ものにすることができるものでも、耐圧にバラツキのあ
る多数のコンデンサと同時に再化成される関係で、耐圧
の低いものの再化成による破壊を防止するために、再化
成電圧を耐圧の低いものに合せて低く設定している。
Furthermore, even if it is possible to make a product with a higher withstand voltage by further increasing the voltage and supplying a repair current, because many capacitors with varying withstand voltages are being re-formed at the same time, those with low withstand voltages may be destroyed by re-forming. In order to prevent this, the reconversion voltage is set low to match the low withstand voltage.

このために、再化成されたコンデンサは規定された低い
耐圧に止どまっていた。
For this reason, reconstituted capacitors remain at a specified low breakdown voltage.

そこで、本発明は上記欠点に鑑み、これを改良したもの
で、個々のコンデンサの耐圧をその上限値まで再化成方
法を工夫することによって絶縁破壊することなしに修復
しようとするものである。
In view of the above-mentioned drawbacks, the present invention is an improvement on this, and attempts to restore the withstand voltage of each capacitor to its upper limit without causing dielectric breakdown by devising a reformation method.

即ち、今まで規定された耐圧には耐えられず破壊されて
いたコンデンサは、低い耐圧の等級の製品として完成さ
せ、修復電流を流せば更に高い耐圧のものにできるコン
デンサはその上限値にまで耐圧を上昇させ、高い耐圧の
等級の製品として完成しようとするものである。
In other words, capacitors that could not withstand the specified withstand voltage and were destroyed are completed as low-voltage grade products, and capacitors that can be made to have a higher withstand voltage by applying a repair current are made to withstand up to the upper limit. The aim is to raise the level of pressure and create a product with high pressure resistance.

つまり、本発明の再化成方法はその再化成電流の印加方
法を従来の定電圧印加に換えて、定電流印加にて行なお
うとするものである。
That is, in the re-forming method of the present invention, the re-forming current is applied by applying a constant current instead of the conventional constant voltage application.

このような本発明の再化成工程は次の様にして行なわれ
る。
Such a reconversion step of the present invention is carried out as follows.

第1図に於いて、1は化成液よりやや薄めに溶した再化
成液であって、電解槽2に満たされている。
In FIG. 1, reference numeral 1 indicates a re-forming liquid which is slightly diluted than the chemical liquid, and is filled in an electrolytic cell 2.

そして、コンデンサペレット3に定電流源4より一定の
電流を流すようにしている。
A constant current is caused to flow through the capacitor pellet 3 from a constant current source 4.

この定電流の大きさはそのコンデンサの最大許容漏洩電
流に合致又は準じて選ばれ、再化成電圧は電圧計5にて
計測されるよううになっている。
The magnitude of this constant current is selected to match or conform to the maximum allowable leakage current of the capacitor, and the reconstitution voltage is measured by a voltmeter 5.

そして、例えば再化成時の電圧上昇は第2図の様になる
For example, the voltage rise during re-formation is as shown in FIG.

定電流印加であるので、初期のうちは、印加時間に対し
て、電圧は比較的リニアーに上昇して行く。
Since constant current is applied, the voltage increases relatively linearly with respect to the application time in the initial stage.

そして、その電圧が上昇するにつれて、漏洩電流分が増
加し始め充電に寄与する電流が減少するので、その傾き
が平担になって行く。
As the voltage increases, the leakage current begins to increase and the current contributing to charging decreases, so the slope becomes flat.

更に再化成電流によって絶縁層が修復され、絶縁耐力が
向上して漏洩電流分が減少したりして、この間傾きが変
化しつつ電圧が上昇して行く。
Furthermore, the insulating layer is repaired by the reformation current, the dielectric strength is improved, and the leakage current is reduced, and during this time the voltage increases while the slope changes.

そして最終的にこの傾きが平担になり、漏洩電流が印加
電流と同一になった時点で再化成を停止する。
Finally, when this slope becomes flat and the leakage current becomes equal to the applied current, re-formation is stopped.

この時の電圧を測定すれば、最大許容漏洩電流に対する
耐圧V1,V2を正確に知ることができる。
By measuring the voltage at this time, it is possible to accurately know the withstand voltages V1 and V2 with respect to the maximum allowable leakage current.

以上説明したように、本発明は弁作用を有する金属粉末
を所望形状に成形してなるコンデンサペレットの絶縁層
上に半導体層を形成した後に、そのコンデンサの最大許
容漏洩電流以下の定電流で再化成を、行なうことを特徴
とするコンデンサの製造方法を提供したから、再化成に
よって絶縁破壊することなく、コンデンサの耐圧をその
上限まで修復し、且つその耐圧を正確に測定でき、コン
デンサの素材を効率良く完成させることができる。
As explained above, the present invention involves forming a semiconductor layer on the insulating layer of a capacitor pellet made by molding metal powder having a valve action into a desired shape, and then regenerating it at a constant current that is less than the maximum allowable leakage current of the capacitor. Since we have provided a method for manufacturing capacitors that is characterized by chemical formation, it is possible to restore the withstand voltage of the capacitor to its upper limit without causing dielectric breakdown due to re-forming, and to accurately measure the withstand voltage. It can be completed efficiently.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の再化成方法の説明図、第2図は再化成
時の電流印加時間とコンデンサペレットに印加される電
圧との関係図である。 1・・・・・・再化成液、2・・・・・・電解槽、3・
・・・・・コンデンサペレット、4・・・・・・定電流
源、5・・・・・・電圧計、VL,V2・・・・・・最
大許容漏洩電流に対応した修複後のコンデンサの耐圧。
FIG. 1 is an explanatory diagram of the re-forming method of the present invention, and FIG. 2 is a diagram showing the relationship between the current application time and the voltage applied to the capacitor pellet during re-forming. 1... Reconversion liquid, 2... Electrolytic tank, 3.
... Capacitor pellet, 4 ... Constant current source, 5 ... Voltmeter, VL, V2 ... ... Capacitor after repair corresponding to the maximum allowable leakage current. Pressure resistant.

Claims (1)

【特許請求の範囲】[Claims] 1 弁作用を有する金属粉末を所望形状に成形してなる
コンデンサペレットの絶縁層上に半導体層を形成した後
に、そのコンデンサの最大許容漏洩電流以下の定電流で
再化成を行なうことを特徴とするコンデンサの製造方法
1. After forming a semiconductor layer on the insulating layer of a capacitor pellet made by molding metal powder with valve action into a desired shape, reconstitution is performed at a constant current that is less than the maximum allowable leakage current of the capacitor. Method of manufacturing capacitors.
JP50079787A 1975-06-26 1975-06-26 condenser no seizouhouhou Expired JPS5813017B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50079787A JPS5813017B2 (en) 1975-06-26 1975-06-26 condenser no seizouhouhou

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50079787A JPS5813017B2 (en) 1975-06-26 1975-06-26 condenser no seizouhouhou

Publications (2)

Publication Number Publication Date
JPS523152A JPS523152A (en) 1977-01-11
JPS5813017B2 true JPS5813017B2 (en) 1983-03-11

Family

ID=13699913

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50079787A Expired JPS5813017B2 (en) 1975-06-26 1975-06-26 condenser no seizouhouhou

Country Status (1)

Country Link
JP (1) JPS5813017B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102511876B (en) * 2011-12-29 2014-01-01 山西汉波食品股份有限公司 Hawthorn red jujube thick syrup and production process thereof
JP6775178B2 (en) * 2016-03-17 2020-10-28 パナソニックIpマネジメント株式会社 Manufacturing method of electrolytic capacitors

Also Published As

Publication number Publication date
JPS523152A (en) 1977-01-11

Similar Documents

Publication Publication Date Title
CN109378218B (en) A kind of manufacturing method of aluminum electrolytic capacitor forming foil for high stability and low voltage
JPS5813017B2 (en) condenser no seizouhouhou
WO2010063453A1 (en) Method for reforming electrolytic capacitors
JPS5989796A (en) Manufacture of aluminum foil for electrolytic capacitor
US1935860A (en) Electrolytic device
US4052273A (en) Method of anodizing porous tantalum
US2989447A (en) Manufacture of dry electrolytic devices
US2151806A (en) Electrolytic condenser and method of making same
EP2834656A1 (en) Method for determining an overall loss of capacitance of a secondary cell
JPS597208B2 (en) Capacitor manufacturing method
JPS6360524B2 (en)
JP3199096B2 (en) Solid electrolytic capacitors
JPH0239417A (en) Manufacture of electrolytic capacitor
GB1432036A (en) Tantalum capacitor and method of manufacture therefor
JPH02276215A (en) Manufacture of solid electrolyte capacitor
US1963049A (en) Electrolytic cell and part thereof and method of making the same
US3607385A (en) Method of manufacturing solid capacitors
JPS6035513A (en) Method of producing aluminum foil for electrolytic condenser
JPH10112423A (en) Method of forming anode foil for aluminum electrolytic capacitor
JPS6023494B2 (en) Manufacturing method of solid electrolytic capacitor
JPH02277212A (en) Tantalum electrolytic capacitor and its manufacture
JPH02277213A (en) Solid electrolytic capacitor and its manufacture
WO2002073663A1 (en) Arrangement and method for the rear-faced contacting of a semiconductor substrate
CN121260672A (en) High-reliability aluminum electrolytic capacitor and manufacturing method thereof
DE1108811B (en) Method of manufacturing a tantalum electrolytic capacitor