JPS5813017B2 - condenser no seizouhouhou - Google Patents
condenser no seizouhouhouInfo
- Publication number
- JPS5813017B2 JPS5813017B2 JP50079787A JP7978775A JPS5813017B2 JP S5813017 B2 JPS5813017 B2 JP S5813017B2 JP 50079787 A JP50079787 A JP 50079787A JP 7978775 A JP7978775 A JP 7978775A JP S5813017 B2 JPS5813017 B2 JP S5813017B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- capacitor
- current
- forming
- withstand
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000003990 capacitor Substances 0.000 claims description 26
- 239000008188 pellet Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 description 13
- 238000000354 decomposition reaction Methods 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000008929 regeneration Effects 0.000 description 1
- 238000011069 regeneration method Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
【発明の詳細な説明】
この発明はコンデンサの製造方法に関し、特にコンデン
サペレットの再化成方法の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a capacitor, and more particularly to an improvement in a method for reforming capacitor pellets.
一般にこの種コンデンサは例えばタンタル、チタンなど
のように弁作用を有する金属粉末を円柱状に加圧成形し
、焼結してなるコンデンサペレットの表面に、化成処理
により誘電体層としての絶縁層を形成し、然る後、絶縁
層上に半導体層を熱分解によって形成する操作を複数回
繰り返して形成されている。In general, this type of capacitor is made by press-molding metal powder with valve action, such as tantalum or titanium, into a cylindrical shape and sintering it. An insulating layer as a dielectric layer is formed on the surface of the capacitor pellet by chemical conversion treatment. The semiconductor layer is then formed on the insulating layer by thermal decomposition, which is repeated several times.
ところが、この分解工程時に絶縁層である酸化皮膜層が
熱的ストレス等によって劣化して絶縁耐力が落ちる傾向
にある。However, during this decomposition process, the oxide film layer, which is an insulating layer, tends to deteriorate due to thermal stress and the like, resulting in a decrease in dielectric strength.
そこで分解工程毎ないしは後にこの絶縁層を修復する目
的で再化成を数回行なっている。Therefore, re-forming is performed several times in order to repair the insulating layer after each decomposition process or after the decomposition process.
この再化或は次の様にして行なわれている。This regeneration is carried out as follows.
即ち、例えば化成において用いられたH3P04又はH
2SO4を化成時よりやや濃度を低くして電解液とする
。That is, for example, H3P04 or H used in chemical synthesis
The concentration of 2SO4 is made slightly lower than that at the time of chemical formation and used as an electrolytic solution.
そして、これを満たした電解液槽に分解工程の途中又は
後のコンデンサペレットを浸漬し、このコンデンサペレ
ットに直流電流を流して行なっている。Then, the capacitor pellets are immersed in the electrolytic solution tank filled with this during or after the decomposition process, and a direct current is passed through the capacitor pellets.
そして、従来この再化或は再化成を行なおうとするコン
デンサの予定されている耐圧に準じた定電圧を印加して
行なわれていた。Conventionally, this reconstitution or reconstitution has been carried out by applying a constant voltage according to the expected withstand voltage of the capacitor to be reconstituted.
ところが、この方法であるとコンデンサに急激に電圧が
印加されるので、絶縁層が修復されずに一挙に破壊され
ることがあった。However, with this method, voltage is rapidly applied to the capacitor, so the insulating layer may not be repaired and may be destroyed all at once.
そこで、印加直後から徐々に電圧を上昇させる電圧印加
方法も行なわれている。Therefore, a voltage application method is also used in which the voltage is gradually increased immediately after application.
しかし、倒れにせよ、このような定電圧印加にて行なう
方法では、設定電圧が低い場合には低い耐電圧にしか修
復できない。However, even if it falls down, with this method of applying a constant voltage, if the set voltage is low, it can only be restored to a low withstand voltage.
かといって、設定電圧を高めれば、修復不充分のコンデ
ンサでは修復電流を超える多犬な電流が流れて破壊する
ことになっていた。On the other hand, if the set voltage was increased, a large current exceeding the repair current would flow in a capacitor that had not been sufficiently repaired, causing it to be destroyed.
又、更に電圧を上昇させて修復電流を流せば高い耐圧の
ものにすることができるものでも、耐圧にバラツキのあ
る多数のコンデンサと同時に再化成される関係で、耐圧
の低いものの再化成による破壊を防止するために、再化
成電圧を耐圧の低いものに合せて低く設定している。Furthermore, even if it is possible to make a product with a higher withstand voltage by further increasing the voltage and supplying a repair current, because many capacitors with varying withstand voltages are being re-formed at the same time, those with low withstand voltages may be destroyed by re-forming. In order to prevent this, the reconversion voltage is set low to match the low withstand voltage.
このために、再化成されたコンデンサは規定された低い
耐圧に止どまっていた。For this reason, reconstituted capacitors remain at a specified low breakdown voltage.
そこで、本発明は上記欠点に鑑み、これを改良したもの
で、個々のコンデンサの耐圧をその上限値まで再化成方
法を工夫することによって絶縁破壊することなしに修復
しようとするものである。In view of the above-mentioned drawbacks, the present invention is an improvement on this, and attempts to restore the withstand voltage of each capacitor to its upper limit without causing dielectric breakdown by devising a reformation method.
即ち、今まで規定された耐圧には耐えられず破壊されて
いたコンデンサは、低い耐圧の等級の製品として完成さ
せ、修復電流を流せば更に高い耐圧のものにできるコン
デンサはその上限値にまで耐圧を上昇させ、高い耐圧の
等級の製品として完成しようとするものである。In other words, capacitors that could not withstand the specified withstand voltage and were destroyed are completed as low-voltage grade products, and capacitors that can be made to have a higher withstand voltage by applying a repair current are made to withstand up to the upper limit. The aim is to raise the level of pressure and create a product with high pressure resistance.
つまり、本発明の再化成方法はその再化成電流の印加方
法を従来の定電圧印加に換えて、定電流印加にて行なお
うとするものである。That is, in the re-forming method of the present invention, the re-forming current is applied by applying a constant current instead of the conventional constant voltage application.
このような本発明の再化成工程は次の様にして行なわれ
る。Such a reconversion step of the present invention is carried out as follows.
第1図に於いて、1は化成液よりやや薄めに溶した再化
成液であって、電解槽2に満たされている。In FIG. 1, reference numeral 1 indicates a re-forming liquid which is slightly diluted than the chemical liquid, and is filled in an electrolytic cell 2.
そして、コンデンサペレット3に定電流源4より一定の
電流を流すようにしている。A constant current is caused to flow through the capacitor pellet 3 from a constant current source 4.
この定電流の大きさはそのコンデンサの最大許容漏洩電
流に合致又は準じて選ばれ、再化成電圧は電圧計5にて
計測されるよううになっている。The magnitude of this constant current is selected to match or conform to the maximum allowable leakage current of the capacitor, and the reconstitution voltage is measured by a voltmeter 5.
そして、例えば再化成時の電圧上昇は第2図の様になる
。For example, the voltage rise during re-formation is as shown in FIG.
定電流印加であるので、初期のうちは、印加時間に対し
て、電圧は比較的リニアーに上昇して行く。Since constant current is applied, the voltage increases relatively linearly with respect to the application time in the initial stage.
そして、その電圧が上昇するにつれて、漏洩電流分が増
加し始め充電に寄与する電流が減少するので、その傾き
が平担になって行く。As the voltage increases, the leakage current begins to increase and the current contributing to charging decreases, so the slope becomes flat.
更に再化成電流によって絶縁層が修復され、絶縁耐力が
向上して漏洩電流分が減少したりして、この間傾きが変
化しつつ電圧が上昇して行く。Furthermore, the insulating layer is repaired by the reformation current, the dielectric strength is improved, and the leakage current is reduced, and during this time the voltage increases while the slope changes.
そして最終的にこの傾きが平担になり、漏洩電流が印加
電流と同一になった時点で再化成を停止する。Finally, when this slope becomes flat and the leakage current becomes equal to the applied current, re-formation is stopped.
この時の電圧を測定すれば、最大許容漏洩電流に対する
耐圧V1,V2を正確に知ることができる。By measuring the voltage at this time, it is possible to accurately know the withstand voltages V1 and V2 with respect to the maximum allowable leakage current.
以上説明したように、本発明は弁作用を有する金属粉末
を所望形状に成形してなるコンデンサペレットの絶縁層
上に半導体層を形成した後に、そのコンデンサの最大許
容漏洩電流以下の定電流で再化成を、行なうことを特徴
とするコンデンサの製造方法を提供したから、再化成に
よって絶縁破壊することなく、コンデンサの耐圧をその
上限まで修復し、且つその耐圧を正確に測定でき、コン
デンサの素材を効率良く完成させることができる。As explained above, the present invention involves forming a semiconductor layer on the insulating layer of a capacitor pellet made by molding metal powder having a valve action into a desired shape, and then regenerating it at a constant current that is less than the maximum allowable leakage current of the capacitor. Since we have provided a method for manufacturing capacitors that is characterized by chemical formation, it is possible to restore the withstand voltage of the capacitor to its upper limit without causing dielectric breakdown due to re-forming, and to accurately measure the withstand voltage. It can be completed efficiently.
第1図は本発明の再化成方法の説明図、第2図は再化成
時の電流印加時間とコンデンサペレットに印加される電
圧との関係図である。
1・・・・・・再化成液、2・・・・・・電解槽、3・
・・・・・コンデンサペレット、4・・・・・・定電流
源、5・・・・・・電圧計、VL,V2・・・・・・最
大許容漏洩電流に対応した修複後のコンデンサの耐圧。FIG. 1 is an explanatory diagram of the re-forming method of the present invention, and FIG. 2 is a diagram showing the relationship between the current application time and the voltage applied to the capacitor pellet during re-forming. 1... Reconversion liquid, 2... Electrolytic tank, 3.
... Capacitor pellet, 4 ... Constant current source, 5 ... Voltmeter, VL, V2 ... ... Capacitor after repair corresponding to the maximum allowable leakage current. Pressure resistant.
Claims (1)
コンデンサペレットの絶縁層上に半導体層を形成した後
に、そのコンデンサの最大許容漏洩電流以下の定電流で
再化成を行なうことを特徴とするコンデンサの製造方法
。1. After forming a semiconductor layer on the insulating layer of a capacitor pellet made by molding metal powder with valve action into a desired shape, reconstitution is performed at a constant current that is less than the maximum allowable leakage current of the capacitor. Method of manufacturing capacitors.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50079787A JPS5813017B2 (en) | 1975-06-26 | 1975-06-26 | condenser no seizouhouhou |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50079787A JPS5813017B2 (en) | 1975-06-26 | 1975-06-26 | condenser no seizouhouhou |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS523152A JPS523152A (en) | 1977-01-11 |
| JPS5813017B2 true JPS5813017B2 (en) | 1983-03-11 |
Family
ID=13699913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50079787A Expired JPS5813017B2 (en) | 1975-06-26 | 1975-06-26 | condenser no seizouhouhou |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5813017B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102511876B (en) * | 2011-12-29 | 2014-01-01 | 山西汉波食品股份有限公司 | Hawthorn red jujube thick syrup and production process thereof |
| JP6775178B2 (en) * | 2016-03-17 | 2020-10-28 | パナソニックIpマネジメント株式会社 | Manufacturing method of electrolytic capacitors |
-
1975
- 1975-06-26 JP JP50079787A patent/JPS5813017B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS523152A (en) | 1977-01-11 |
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