JPS5813028B2 - semiconductor equipment - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device, and particularly to an inexpensive high frequency, high output transistor.

In general, in high-frequency, high-output transistors, emitter inductance has a large effect on output, and in order to improve output characteristics, it is necessary to reduce emitter inductance.

Furthermore, as the output increases, if sufficient heat dissipation from the semiconductor device is not performed, the semiconductor element will become subject to high vortices and will be destroyed.

For this reason, the thermal design of semiconductor devices has become extremely important as well as the reduction of inductance.

An example of a conventional high-frequency high-power semiconductor device designed and manufactured with the above points in mind is shown in FIGS. 1 and 2.

In these figures, reference numeral 1 denotes a support base made of a dielectric material with good thermal conductivity, and the material used is Bare JJA or the like.

2.3.4 is a metallized layer formed on the surface of the support base 1, and the method for forming it is to attach a Mo-Mn alloy layer to a predetermined position on the surface of the base JJ and sinter and diffuse it in a hydrogen atmosphere. methods etc. are used.

5 and 6 are brazing metals, and γ is a heat sink made of copper or the like, which is bonded to the metallized layer 2 with a brazing metal 6.

8 is a collector lead bonded to the metallized layer 4 with a brazing material 5; 9 is a base lead also bonded to the metallized layer 3 with a brazing material 5; 10 is the collector lead 8.
, similarly to the base lead 9, shows an emitter lead bonded to metallization (not shown) formed on the surface of the support base 1 with a brazing material (not shown).

The semiconductor element 12 is bonded onto the metallized layer 4 using a brazing material 11, and connections to the base lead 9 and emitter lead 10 are made using thin metal wires 13.

Reference numeral 14 indicated by a two-dot chain line in the figure is a resin for protecting the semiconductor element 12 from the outside, and silicone resin is generally used.

In this way, in order to obtain good heat dissipation and high frequency characteristics, conventional semiconductor devices use extremely expensive pottery JJA and also undergo many complicated processes such as metallization and brazing processes, making them extremely expensive. It had become a thing.

The present invention eliminates the above drawbacks and provides an inexpensive semiconductor device for high frequency and high output.

This invention will be explained below.

FIGS. 3 and 4 show an embodiment of the present invention, in which a semiconductor element 12 is attached to a support base 11, which is an extension of a collector lead 8 made of Kovar, copper, etc., using gold thread or Pb-S.
It is bonded with n-based solder 11'.

The base lead 9 is disposed on the opposite surface of the collector lead 8, and the emitter lead 10 is provided with a bridge portion 15 extending between the collector lead 8 and the base lead 9.

A part of the base lead 9, the bridge part 15 of the emitter lead 10, and the support base 11 are made of an insulating resin 1 with good thermal conductivity.
6 and is bonded to the heat sink γ.

Further, the connection to the case lead is made by a thin metal wire 13.

The semiconductor element 12 is protected by a resin 14 indicated by a two-dot chain line.

As mentioned above, the characteristics of the semiconductor device according to this embodiment are that an inexpensive insulating resin 16 can be used instead of the expensive pot JJA, and that the metallization process and brazing process, which were unnecessary in the conventional device, can be omitted. It's about being able to do things.

Therefore, it is possible to provide a semiconductor device that is much cheaper than conventional semiconductor devices.

FIGS. 5 and 6 show other embodiments of this invention,
This embodiment realizes an inexpensive semiconductor device in which one electrode of a semiconductor element 12 and a heat sink 1 are directly connected, and the inductance thereof is made as small as possible.

The semiconductor element 12 is bonded to a support base 11 with collector leads 8 extended thereto by Pb--Sn solder 11', and an opening 18 is provided in the insulating resin 16.

The base electrode of the semiconductor element 12 and the base lead 9 are connected by a thin metal wire 13, and the emitter electrode of the semiconductor element 12 and the heat sink γ are connected by a thin metal wire 19.

By employing the above structure, an inexpensive semiconductor device with reduced emitter inductance can be obtained.

As explained above, the present invention makes it possible to use an inexpensive insulating resin to bond the support base to the heat dissipation body, instead of using expensive pots such as JJA as in the past. Since the brazing step can be omitted, a very inexpensive semiconductor device can be obtained.

Further, by directly connecting one electrode and the heat sink, there is an advantage that a semiconductor device with extremely small inductance can be obtained.

[Brief explanation of drawings]

1 and 2 are a plan view and a sectional view of a conventional semiconductor device, FIGS. 3 and 4 are a plan view and a sectional view of an embodiment of the present invention, and FIGS. 5 and 6 are a plan view and a sectional view of a conventional semiconductor device. FIG. 7 is a plan view and a sectional view showing another embodiment of the invention. In the figure, 7 is a heat sink, 8 is a collector lead, 9 is a base lead, 10 is an L Mitsuta lead, 12 is a semiconductor element, 13
14 is a thin metal wire, 14 is a resin, 15 is a bridge portion, 16 is an insulating resin, 17 is a supporting base, 18 is an opening, and 19 is a thin metal wire. Note that the same reference numerals in the figures indicate the same or corresponding parts.

Claims (1)

[Scope of Claims] 1. A semiconductor element is adhered to a support base made of metal, the support base is adhered to a heat sink made of metal with an insulating resin, and further, the semiconductor element and external leads are connected by thin metal wires. A semiconductor device characterized by: 2. A semiconductor device in which a semiconductor element is bonded to a support base made of metal, the support base is bonded to a heat sink made of metal with an insulating resin, and further the semiconductor element and external leads are connected by thin metal wires. The extended part of the outer lead is used as a support base consisting of the extended part of the outer lead, and another outer lead is arranged on the opposite surface of the extended part of the outer lead, and the extended part of the outer lead and the row part lead are connected to each other. A semiconductor device characterized in that an extended portion of a third external lead is disposed between the extended portions.