JPS5826170B2 - Wafer processing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to wafer processing, and is used to prevent uneven etching of a wafer due to air bubbles adhering to a wafer processing jig, and to prevent a reduction in wafer cleaning effectiveness due to air bubbles adhering to the jig. The purpose is to prevent.

Generally, when cleaning or etching a wafer, problems often occur such as uneven etching on the wafer or lack of cleaning effectiveness.

According to an analysis of this problem, when the jig is made of plastic, its surface is hydrophobic (hydrophobic), so when the jig is immersed in an etching solution or cleaning solution, air bubbles form on the jig surface. It has become clear that one of the causes is the phenomenon of particles adhering to the wafer surface.

Therefore, in the present invention, in order to solve the above-mentioned problems, the jig is made hydrophilic, and each embodiment thereof will be described below with reference to the drawings.

The figure shows an embodiment of the present invention.

In the figure, reference numeral 1 denotes a jig main body made of plastic such as polytetrafluoroethylene, and is made of plastic such as polytetrafluoroethylene (trade name: Teflon) to prevent it from being immersed in etching liquid or the like.

When etching or cleaning a wafer stored in the jig body 1, the jig body 1 is preliminarily subjected to ashering (low-temperature oxidative decomposition of organic matter) using oxygen plasma so that its surface becomes hydrophilic. Insert into device 2.

The air in this asher device 2 is vacuumed through a suction tube 3 to a degree of vacuum of 1 to 5 torr, while 100 to 500 cc of oxygen gas is fed through a delivery tube 4.

For the asher device 2 in this state, an AC voltage with a frequency of 13.56 MHz was supplied to the coil 5 from the AC power supply 6, and the discharge voltage was 2000 to 3000 V and the discharge output power was 4
A discharge of 0 to 100 W and a discharge time of 10 to 20 SeC is caused in the asher device 2.

Then, the oxidation (0□→0
-), a hydrophilic group such as a hydroxyl group (-○I() carboxyl group (-COOH)) is formed on the surface of the jig main body 1.

Thereafter, the wafer housed in the jig main body 1 is placed in an etching solution or a cleaning solution together with the jig, and an etching process or a cleaning process is performed.

At this time, the surface of the jig body becomes hydrophilic due to the hydrophilic group described above, and air bubbles no longer adhere to the jig. Therefore, the air bubbles adhere to the wafer surface, resulting in uneven etching of the wafer and wafer cleaning effects. This prevents a decrease in

Furthermore, the present invention is also applicable to jigs in which bubbles are not desired to adhere to the surface and the surface needs to be made hydrophilic.

As described above, in the present invention, when etching or cleaning a wafer in which air bubbles are not desired to adhere to the surface, since the surface of the jig is made hydrophilic in advance, air bubbles are prevented from adhering to the jig. Therefore, it has the advantage of preventing uneven etching of the wafer and deterioration of the wafer cleaning effect due to the adhesion of these air bubbles to the wafer surface.

[Brief explanation of the drawing]

The figure shows an embodiment of the present invention, and shows an asher process being performed before etching or cleaning. 1...Jig body, 2...Asher device, 3...Suction pipe, 4...Delivery pipe, 5...
...Coil, 6...AC power supply.

Claims (1)

[Claims] 1 Surface treatment of a jig with a hydrophobic jig surface is performed using plasma to make the jig surface hydrophilic, and the wafer housed in the jig with the hydrophilic surface is treated with a surface treatment solution along with the jig. A wafer processing method characterized by performing surface treatment using a wafer.