JPH0371194B2 - - Google Patents
Info
- Publication number
- JPH0371194B2 JPH0371194B2 JP60237405A JP23740585A JPH0371194B2 JP H0371194 B2 JPH0371194 B2 JP H0371194B2 JP 60237405 A JP60237405 A JP 60237405A JP 23740585 A JP23740585 A JP 23740585A JP H0371194 B2 JPH0371194 B2 JP H0371194B2
- Authority
- JP
- Japan
- Prior art keywords
- ultrapure water
- pure water
- production system
- primary pure
- water production
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 26
- 239000012498 ultrapure water Substances 0.000 claims description 26
- 238000004519 manufacturing process Methods 0.000 claims description 14
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 14
- 238000005342 ion exchange Methods 0.000 claims description 6
- 239000004014 plasticizer Substances 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 5
- 150000002500 ions Chemical class 0.000 claims description 5
- 244000005700 microbiome Species 0.000 claims description 4
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 4
- 239000004800 polyvinyl chloride Substances 0.000 claims description 4
- 238000000108 ultra-filtration Methods 0.000 claims description 4
- 230000001954 sterilising effect Effects 0.000 claims description 3
- 238000009832 plasma treatment Methods 0.000 description 7
- 239000007789 gas Substances 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010828 elution Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000005416 organic matter Substances 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 235000015097 nutrients Nutrition 0.000 description 1
- 238000004659 sterilization and disinfection Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Landscapes
- Separation Using Semi-Permeable Membranes (AREA)
- Treatment Of Water By Ion Exchange (AREA)
- Physical Water Treatments (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Description
〔発明の利用分野〕
本発明は一次純水からさらに純度の高い超清浄
水を得るための超純水製造システムに関するもの
である。
〔発明の背景〕
半導体工業および医薬品工業などでは、非常に
純度の高いいわゆる超純水が使用されている。こ
の超純水は年々厳しい水質が要求され、特に半導
体工業の分野では、素子の集積度の向上に伴つて
従来、問題視されなかつた極微量の不純物が問題
になつてきた。
ところが、従来の超純水製造システムでは、例
えば特開昭58−220000号公報に記載されているよ
うに、超純水の不純物としてはイオン性不純物、
微生物数および微粒子数の３項目についてのみ説
明されており、トータル オーガニツク カーボ
ン（Total Organic Carbon.TOC）と呼ばれる
有機炭素量については言及されていない。該超純
水中の有機炭素すなわち有機物が増加すると、こ
の有機物を栄養源とする微生物が増加するため、
微粒子が増加するという一連の汚染が進行して水
質を著しく損う。上記の不純物は超LSI製造上、
素子欠陥の原因となつて歩留りの低下を招く恐れ
がある。
〔発明の目的〕
本発明は上記にかんがみ有機物の溶出が極めて
少ない超純水製造システムを提供することを目的
とするものである。
〔発明の概要〕
本発明は上記目的を達成するために、一次純水
に関する紫外線殺菌装置、イオン交換装置および
限外過装置と、これらの各装置間および超純水
の使用個所までの各配管とからなる超純水製造シ
ステムにおいて、前記各配管の内側表面に窒素ガ
スのプラズマで処理を施し、前記内側表面に改質
層を形成したことを特徴とする。
〔発明の実施例〕
以下、本発明の実施例を図面を用いて説明す
る。
第１図は本発明に係わる超純水製造システムの
一実施例の構成を示すブロツク図である。同図に
おいて、１は一次純水Wa中の微生物を殺菌する
ための紫外線殺菌装置、２は一次純水Wa中のイ
オンを除去するためのイオン交換装置であり、３
は微粒子を除去する限外過装置、４Ａ，４Ｂは
前記装置２と１．３とをそれぞれ接続する配管、
４Ｃは前記装置３と超純水Wbの使用部署（図示
せず）とを接続する配管である。
上記配管４Ａ〜４Ｃは第２図に示すように、そ
の配管本体５の内側表面には、窒素ガスによりプ
ラズマ処理を施して形成された改質層６が設けら
れている。該プラズマ処理の条件の一例を下記に
示す。
(a) 放電周波数 13.56MHz
(b) 放電々力 50W
(c) Arガス流量 ５ml／min
(d) 放電時間 5min
また、前記配管４Ａ〜４Ｃは、可塑剤を全く含
有しないポリ塩化ビニルを主成分とする管状成形
物（以下、硬質塩化ビニル管と略称する）であ
る。
一方、前記プラズマ処理は公知の方法で行なう
ことができる。例えば高周波放電を行なう場合に
は、外部電極を有する真空容器中に配管を設置
し、処理ガスを導入して系内を通常10-3〜5Torr
に保持した後、この系内に数Ｗ〜数K.W.の高周
波電力を印加する方法で行なえばよい。プラズマ
を発生させる周波数としては、通常数ＫHz〜数Ｍ
Hzが用いられるが、マイクロ波を用いたプラズマ
によつても十分な効果が得られる。また、プラズ
マ処理時間は印加電圧および処理ガスの流量（あ
るいは圧力）によつて異なるが、一般には数秒か
ら数時間に設定すればよい。前記プラズマ処理
は、上述した外部電極方式に限定されず内部電極
方式でもよく、このいづれの方式によつても同等
の効果を得ることができる。
上述した超純水製造システムでは、供給される
一次純水Waは、まず紫外線殺菌装置１で紫外線
照射による殺菌処理を施された後、配管４Ａを経
てイオン交換装置２に導入され、こゝで溶存する
イオンが除去される。このイオンを除去された純
水Waは、配管４Ｂを経て限外過装置３に導入
され、ここで純水Wa中に含有する微粒子が除去
されて超純水Wbとなる。この超純水Wbは配管４
Ｃを経て使用部署まで給送される。
本実施例１の超純水製造システムにより製造さ
れた超純水の性能は、第１表の実施例の項目に示
す通りである。なお、有機物の溶出量（TOC量）
は超純水製造システムの運転時における超純水使
用箇所での測定値である。その有機物の溶出量
（TOC量）は、次に述べる従来の製造システムに
よる比較例に比べて20％となり、極めて低いこと
が理解される。
上記比較例は配管を除いて実施例と同一な構成
からなる超純水製造システムであり、この比較例
の配管には、プラズマ処理を施した改質層を有し
ない硬質塩化ビニル管が用いられている。この比
較例による超純水の性能は、第１表の比較例の項
目に示す通りであり、そのTOC量が実施例のそ
れに比べて約５倍も多い。
次に、配管材料として本発明の対象でない可塑
剤を多量に含むいわゆる軟塩化ビニル成形物のプ
ラズマ処理に有効な（可塑剤の溶出を防ぐことが
できる）一酸化炭素ガスを用いた実験を、本発明
の対象である可塑剤を全く含まない硬質塩化ビニ
ル管を用いて行なつた。その結果を第３図に示
す。この図から明かなように硬質塩化ビニル管が
基材である場合は一酸化炭素ガスよりも窒素ガス
を用いたプラズマ処理の方がはるかにTOC量を
少なく（約1/5）することができる。なお、本評
価は内径40mm、長さ400mmの可塑剤を全く含有し
ない硬質塩化ビニル管に超純水を詰め、テフロン
栓で密栓し、60℃で加速溶出試験を行なつたもの
である。
[Field of Application of the Invention] The present invention relates to an ultrapure water production system for obtaining ultraclean water with even higher purity from primary pure water. [Background of the Invention] In the semiconductor industry, pharmaceutical industry, etc., extremely pure water, so-called ultrapure water, is used. The quality of this ultrapure water is becoming increasingly strict year after year, and especially in the field of semiconductor industry, as the degree of integration of devices increases, extremely small amounts of impurities, which were not considered a problem in the past, have become a problem. However, in conventional ultrapure water production systems, as described in JP-A-58-220000, the impurities in ultrapure water include ionic impurities,
Only three items, the number of microorganisms and the number of particulates, are explained, and the amount of organic carbon called Total Organic Carbon (TOC) is not mentioned. As organic carbon, that is, organic matter in the ultrapure water increases, the number of microorganisms that use this organic matter as a nutrient source increases.
This leads to a series of contamination events in which fine particles increase, significantly impairing water quality. The above impurities are caused during VLSI manufacturing.
This may cause element defects and reduce yield. [Object of the Invention] In view of the above, an object of the present invention is to provide an ultrapure water production system in which the elution of organic substances is extremely small. [Summary of the Invention] In order to achieve the above object, the present invention provides an ultraviolet sterilization device, an ion exchange device, and an ultrafiltration device for primary pure water, and each piping between these devices and to the point where ultrapure water is used. An ultrapure water production system comprising the above, characterized in that the inner surface of each of the pipes is treated with nitrogen gas plasma to form a modified layer on the inner surface. [Embodiments of the Invention] Examples of the present invention will be described below with reference to the drawings. FIG. 1 is a block diagram showing the configuration of an embodiment of an ultrapure water production system according to the present invention. In the figure, 1 is an ultraviolet sterilizer for sterilizing microorganisms in primary pure water W a , 2 is an ion exchange device for removing ions in primary pure water W a , and 3 is an ion exchange device for removing ions in primary pure water W a.
4A and 4B are pipes connecting the devices 2 and 1.3, respectively,
4C is a pipe connecting the device 3 and a department (not shown) that uses ultrapure water Wb . As shown in FIG. 2, the pipes 4A to 4C have a modified layer 6 formed on the inner surface of the pipe main body 5 by plasma treatment using nitrogen gas. An example of the conditions for the plasma treatment is shown below. (a) Discharge frequency 13.56MHz (b) Discharge power 50W (c) Ar gas flow rate 5ml/min (d) Discharge time 5min Furthermore, the piping 4A to 4C are mainly composed of polyvinyl chloride that does not contain any plasticizer. It is a tubular molded product (hereinafter abbreviated as hard vinyl chloride pipe). On the other hand, the plasma treatment can be performed by a known method. For example, when performing high-frequency discharge, piping is installed in a vacuum container with external electrodes, and processing gas is introduced to maintain the system at a temperature of usually 10 -3 to 5 Torr.
This may be carried out by applying a high frequency power of several watts to several kilowatts into the system after maintaining the temperature at . The frequency for generating plasma is usually from several KHz to several M
Although Hz is used, sufficient effects can also be obtained with plasma using microwaves. Further, the plasma processing time varies depending on the applied voltage and the flow rate (or pressure) of the processing gas, but generally it may be set from several seconds to several hours. The plasma processing is not limited to the external electrode method described above, but may also be an internal electrode method, and the same effect can be obtained by either method. In the ultrapure water production system described above, the supplied primary pure water W a is first sterilized by ultraviolet irradiation in the ultraviolet sterilizer 1 and then introduced into the ion exchange device 2 via the pipe 4A. Dissolved ions are removed. The pure water W a from which ions have been removed is introduced into the ultrafiltration device 3 via the pipe 4B, where the fine particles contained in the pure water W a are removed to become ultrapure water W b . This ultrapure water W b is pipe 4
It is sent to the department where it will be used via C. The performance of the ultrapure water produced by the ultrapure water production system of Example 1 is as shown in the Example section of Table 1. In addition, the amount of organic matter eluted (TOC amount)
is the value measured at the point where ultrapure water is used during operation of the ultrapure water production system. It is understood that the amount of organic matter eluted (TOC amount) is 20% compared to the comparative example using the conventional manufacturing system described below, which is extremely low. The comparative example above is an ultrapure water production system that has the same configuration as the example except for the piping, and the piping in this comparative example uses hard PVC pipes that have been subjected to plasma treatment and do not have a modified layer. ing. The performance of the ultrapure water according to this comparative example is as shown in the item of comparative example in Table 1, and the TOC amount is about 5 times greater than that of the example. Next, we conducted an experiment using carbon monoxide gas, which is effective for plasma treatment of so-called soft vinyl chloride molded products that contain a large amount of plasticizer, which is not the subject of the present invention, as a piping material (can prevent elution of plasticizer). The experiment was carried out using a hard vinyl chloride pipe containing no plasticizer, which is the object of the present invention. The results are shown in FIG. As is clear from this figure, when the base material is hard PVC pipe, plasma treatment using nitrogen gas can reduce the amount of TOC much less (about 1/5) than using carbon monoxide gas. . In this evaluation, a hard vinyl chloride tube containing no plasticizer with an inner diameter of 40 mm and a length of 400 mm was filled with ultrapure water, sealed with a Teflon stopper, and an accelerated elution test was conducted at 60°C.
以上説明したように、本発明によれば、配管か
らの低分子有機物の溶出を防止することができる
ので、不純物の極めて少ない超純水を製造するこ
とが可能である。
As explained above, according to the present invention, it is possible to prevent the elution of low-molecular organic substances from piping, so it is possible to produce ultrapure water with extremely few impurities.
第１図は本発明に係わる超純水製造システムの
一実施例の構成を示すブロツク図、第２図は第１
図の配管の長手方向の部分断面図、第３図は一酸
化炭素ガスと窒素ガスのプラズマ処理効果を比較
した図である。
１……紫外線殺菌装置、２……イオン交換装
置、３……限外過装置、４Ａ〜４Ｃ……配管、
５……配管本体、６……改質層。
FIG. 1 is a block diagram showing the configuration of an embodiment of an ultrapure water production system according to the present invention, and FIG.
FIG. 3 is a partial cross-sectional view in the longitudinal direction of the piping in the figure, and is a diagram comparing the plasma treatment effects of carbon monoxide gas and nitrogen gas. 1... Ultraviolet sterilizer, 2... Ion exchange device, 3... Ultrafiltration device, 4A to 4C... Piping,
5... Piping body, 6... Modified layer.
Claims (1)
殺菌装置と、該一次純水中のイオンを除去するた
めのイオン交換装置と、該一次純水中の微粒子を
除去するための限外過装置と、これらの各装置
間および超純水の使用個所までの各配管とからな
る超純水製造システムにおいて、前記各配管が可
塑剤を全く含有しないポリ塩化ビニルを主成分と
する管状成形物から成り、かつ、その内側表面に
窒素ガスのプラズマで処理を施し、前記内側表面
に改質層を形成したことを特徴とする超純水製造
システム。1. An ultraviolet sterilizer for sterilizing microorganisms in the primary pure water, an ion exchange device for removing ions in the primary pure water, and an ultrafiltration device for removing particulates in the primary pure water. In an ultrapure water production system consisting of pipes between each of these devices and to the point where ultrapure water is used, each pipe is made from a tubular molded product whose main component is polyvinyl chloride, which does not contain any plasticizer. 1. An ultrapure water production system characterized in that the inner surface thereof is treated with nitrogen gas plasma to form a modified layer on the inner surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60237405A JPS6297687A (en) | 1985-10-25 | 1985-10-25 | Ultrapure water production system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60237405A JPS6297687A (en) | 1985-10-25 | 1985-10-25 | Ultrapure water production system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6297687A JPS6297687A (en) | 1987-05-07 |
| JPH0371194B2 true JPH0371194B2 (en) | 1991-11-12 |
Family
ID=17014900
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60237405A Granted JPS6297687A (en) | 1985-10-25 | 1985-10-25 | Ultrapure water production system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6297687A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014014456A1 (en) | 2012-07-18 | 2014-01-23 | Otis Elevator Company | Fire-retardant belt |
-
1985
- 1985-10-25 JP JP60237405A patent/JPS6297687A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014014456A1 (en) | 2012-07-18 | 2014-01-23 | Otis Elevator Company | Fire-retardant belt |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6297687A (en) | 1987-05-07 |
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