JPS5827660B2 - semiconductor equipment - Google Patents

Abstract

PURPOSE:To prevent the abnormal connection of an element such as a diffused resistor or the like to an aluminum wire by rounding about the wire for connecting a bonding wire to the element in a linear IC and substantially increasing the length of the wire. CONSTITUTION:A rectangular bonding pad 1 is formed of an aluminum layer in the vicinity of a scribe region 3 of a silicon pellet 2 of a linear IC. Reference 4 is diffused resistor having a thickness of less than 1mu formed by selectively diffusing predetermined impurity in the pellet 2. An aluminum wire 5 having a shape rounding about in comb shape for connecting the contact hole 4a of the resistor 4 to the bonding pad 1 is formed. Since the length of the wire 5 is thus increased, it can prevent the permeation of the aluminum upon heat treatment, and prevent the abnormal contact alloy at the contact part.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an electrode lead-out structure of a semiconductor device, and is mainly used to prevent abnormal contact alloy from occurring at a contact portion between an element such as a high-resistance diffused resistor and an aluminum wiring in a linear IC or the like. Therefore, the purpose is to increase the electrostatic breakdown strength of each terminal such as the contact portion.

In linear ICs and the like, electrostatic breakdown strength failures may occur at each terminal, particularly at the contact portion between a bonding pad and a diffused resistor.

Investigating the cause of this problem, we found that such damage tends to occur when the contact is formed in a thin part of the diffusion layer with a depth of 1 μm or less, and that aluminum is likely to occur in the area where the diffusion resistor is formed (or in the silicon substrate). It was found that this is because the contact alloy penetrates into the inside and causes an abnormal contact alloy.

In this case, the aluminum penetration phenomenon is accelerated by heat during each processing step such as pellet attachment, external lead wire bonding, or sealing.

Further analysis of the aluminum penetration phenomenon revealed that the phenomenon is caused by the contact hole of the diffused resistor from the bonding pad (i.e., a hole is opened in the insulating film formed on the semiconductor base to obtain a contact to the diffused resistor). It has been found that the shorter the distance of the aluminum wiring to the hole (with holes), the more likely it is to occur.

Therefore, by increasing the distance between the bonding pad and the contact hole (the length of the line connecting the two at the shortest distance), it is possible to increase the length of the aluminum wiring between them and prevent the above penetration phenomenon. Conceivable.

However, in this case, the pellet size becomes large, which increases the cost, and there is a fear that there is a lack of freedom in pattern design.

The present invention takes the above-mentioned problems into consideration and eliminates the above-mentioned conventional drawbacks, and one embodiment thereof will be described below with reference to the drawings.

The figure shows a plan view of one embodiment of the electrode extraction structure according to the present invention.

In the figure, reference numeral 1 denotes a bonding pad, which is formed on the Si pellet 2 of the linear IC near the scribe area 3 by an aluminum layer in a substantially rectangular shape as shown in the figure.

Reference numeral 4 denotes a diffused resistor, which is formed as thin as 1 μm or less by selectively diffusing a predetermined impurity into the pellet 2, as described above.

The distance l between the contact hole 4a of the diffused resistor 4 and the bonding pad 1 is approximately the same as that of the conventional one.

Reference numeral 5 denotes an aluminum wiring connecting the bonding pad 1 and the diffused resistor 4, which is detoured into a comb shape (a shape having a part parallel to one side of the bonding pad 1 and a part perpendicular to the part). It is said that

Therefore, although the distance between the bonding pad 1 and the contact hole 4a is set to the same length l as in the conventional case, the length of the aluminum wiring 5 has a value that is smaller than the length l. ing.

The width of the aluminum wiring 5 is narrower than the width of the aluminum in the contact portion, so that the above-mentioned penetration phenomenon can be more effectively prevented.

In particular, as is clear from the drawing, the pounding pad 1
The wiring layer 5 between the and the connecting portion (contact hole) 4a includes a first wiring layer portion along the side of the bonding pad 1 (a portion arranged parallel to the side of the bonding pad 1) and a first wiring layer portion along the side of the bonding pad 1. The first wiring layer portion is longer than the second wiring layer portion, and the second wiring layer portion is longer than the second wiring layer portion. It is formed.

Therefore, even if the distance l between the bonding pad 1 and the contact hole (the length of the line connecting the two at the shortest distance) is short, due to the presence of the first wiring layer portion, the distance from the bonding pad to the semiconductor region is The distance can be made sufficiently large.

Therefore, it is possible to reliably prevent the material of the bonding pad from penetrating into the semiconductor region.

Further, in the structure of the wiring layer 5, the depth of the diffusion layer is 1.5 mm, as described above. When the thickness is less than μ, the electrostatic breakdown strength can be increased without sacrificing freedom in pattern design.

Further, as is clear from the drawing, the structure of the wiring layer 5 described above is effective when no other wiring layer exists on the line connecting the bonding pad and the connection part at the shortest distance. It is possible to increase the density of layers.

Note that the aluminum wiring 5 is not limited to the comb shape, but may be formed into a detour shape as described above, so that the length thereof can be shortened, and it goes without saying that it can be formed in various shapes.

As described above, according to the electrode lead-out structure of a semiconductor device according to the present invention, the aluminum wiring connecting the bonding pad and the element such as the diffused resistor in a linear IC or the like is made long, so that there is no abnormal contact as in the conventional case. It is possible to prevent the formation of alloy, and therefore it is possible to effectively prevent electrostatic breakdown strength defects of elements such as the above-mentioned diffused resistor caused by this, and the above-mentioned aluminum wiring is connected to the above-mentioned bonding pad and contact hole as shown in the drawing. Since the shape is such that no other wiring exists within the predetermined area of the contact hole, the distance between the bonding pad and the contact hole can be kept at the same level as before, even though the aluminum wiring has become longer. It has the advantage that pattern design etc. can be done freely.

[Brief explanation of drawings]

The drawing shows one of the electrode extraction structures of the semiconductor device according to the present invention.
FIG. 3 is a plan view of the embodiment. 1...Ponding pad, 2...Pellet, 3...Scribe area, 4...
・Diffused resistance, 4a...Contact hole, 5...
...Aluminum wiring, l...Distance between the bonding pad and the contact hole.

Claims (1)

[Scope of Claims] 1. A semiconductor element region formed within a semiconductor base, a wiring layer having a connecting portion connected to the region and extending on the base, and a wiring layer spaced apart from the region in the upper plane of the base. , and a bonding pad connected to the wiring layer, wherein the wiring layer between the bonding pad and the connection portion has a first wiring layer portion along the bonding pad in the basic upper plane. A semiconductor device comprising a second wiring layer portion extending away from the bonding pad, and wherein the first wiring layer portion is formed longer than the second wiring layer portion. 2. A semiconductor element region formed in a semiconductor base, a wiring layer having a connection portion connected to the region and extending on the base, and spaced apart from the region in the upper plane of the base,
and a bonding pad connected to the wiring layer, in which the wiring layer between the bonding pad and the connection portion has a first wiring layer portion along the bonding pad in the basic upper plane and a bonding pad connected to the wiring layer. The first wiring layer portion is formed longer than the second wiring layer portion, and the depth of the semiconductor region is 1 μm or less. semiconductor device. 3. A semiconductor main element region formed within a semiconductor base, a wiring layer having a connecting portion connected to the region and extending over the base, and a wiring layer spaced apart from the above region in the upper plane of the base and the above wiring. In a semiconductor device having a bonding pad connected to a layer, a wiring layer between the bonding pad and the connection portion has a first wiring layer portion along the bonding pad on the plane above the substrate and a bonding pad connected to the bonding pad. a second wiring layer portion that is farther away from the bonding pad; A semiconductor device characterized in that there is no wiring layer other than the above wiring layer.