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JPS5828597B2 - Drive circuit for thin film electroluminescent panel - Google Patents
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JPS5828597B2 - Drive circuit for thin film electroluminescent panel - Google Patents

Drive circuit for thin film electroluminescent panel

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Publication number
JPS5828597B2
JPS5828597B2 JP51115092A JP11509276A JPS5828597B2 JP S5828597 B2 JPS5828597 B2 JP S5828597B2 JP 51115092 A JP51115092 A JP 51115092A JP 11509276 A JP11509276 A JP 11509276A JP S5828597 B2 JPS5828597 B2 JP S5828597B2
Authority
JP
Japan
Prior art keywords
voltage
thin film
drive circuit
elp
film electroluminescent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP51115092A
Other languages
Japanese (ja)
Other versions
JPS5340292A (en
Inventor
宣捷 賀好
健治 木下
忠二 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP51115092A priority Critical patent/JPS5828597B2/en
Publication of JPS5340292A publication Critical patent/JPS5340292A/en
Publication of JPS5828597B2 publication Critical patent/JPS5828597B2/en
Expired legal-status Critical Current

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  • Control Of El Displays (AREA)

Description

【発明の詳細な説明】 本発明は薄膜エレクトロルミネッセンスパネル(以下E
LP)のように発光輝度と印加電圧の間にヒステリシス
特性を有する表示素子を駆動する際にして、発光開始電
圧よりもはるかに低い電圧を持つ1つの直流電圧源で構
成した駆動回路を提供するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a thin film electroluminescent panel (hereinafter referred to as E
To provide a drive circuit configured with one DC voltage source having a voltage far lower than a light emission start voltage when driving a display element having a hysteresis characteristic between light emission brightness and applied voltage, such as an LP. It is something.

先ず、ELPの断面構成図を第1図に示す。First, a cross-sectional configuration diagram of the ELP is shown in FIG.

ガラス基板1の上にIn2O3の透明電極2を設ける。A transparent electrode 2 made of In2O3 is provided on a glass substrate 1.

この上に例えばY2O3等の誘電物質層3を、更にこの
上に例えばMnをドープしたZnS等の螢光層4を更に
その上に上記と同じ誘電物質31を蒸着法、スパッタ法
等により被着して3層構造にし、その上にAI等の背面
電極5を配置して構成される。
A dielectric material layer 3 such as Y2O3 is deposited on top of this, and a fluorescent layer 4 of ZnS doped with Mn is further applied thereon, and the same dielectric material 31 as described above is deposited by vapor deposition, sputtering, etc. It has a three-layer structure, on which a back electrode 5 made of AI or the like is arranged.

このような構造のELPは輝度や寿命・安定性の点で従
来の分散型EL素子に比して優れた特性を有していると
ともに、このELPは新たに輝度と印加電圧の間に第2
図すの如き履歴現象を示す。
ELPs with such a structure have superior characteristics in terms of brightness, lifespan, and stability compared to conventional distributed EL elements.
The historical phenomenon shown in the figure is shown.

この特性を第2図に従い説明すると、最初第2図aの如
く電圧振幅v1 のパルスを印加すると輝度は同図す、
cに示すように81 のレベルにある。
To explain this characteristic according to Fig. 2, when a pulse of voltage amplitude v1 is first applied as shown in Fig. 2a, the brightness will be as shown in Fig. 2a.
It is at level 81 as shown in c.

ここでvlは発光閾値電圧をvthとするとvl>vt
hである。
Here, vl is vl>vt, where vth is the emission threshold voltage.
It is h.

これに書き込み電圧v2を印加すると輝度は一挙にB3
まで上昇し、以後電圧値を再び維持電圧v1に戻しても
輝度はB1より大きいB2に落着く。
When a write voltage v2 is applied to this, the brightness increases all at once to B3.
Even if the voltage value is then returned to the maintenance voltage v1, the brightness settles to B2, which is higher than B1.

これに消去電圧V3を印加すると輝度レベルは急激に減
少し、再び維持電圧V1 まで戻すと輝度はB1 に
落着(。
When the erase voltage V3 is applied to this, the brightness level decreases rapidly, and when it is returned to the sustaining voltage V1 again, the brightness settles to B1 (.

これら時間的な関係は第2図aに附された記号1. 、
13・・・・・・・・・・・・t21が同図Cの各同じ
記号の位置に対応させることにより示されている。
These temporal relationships are indicated by the symbols 1. ,
13......t21 are shown by corresponding to the positions of the same symbols in C of the same figure.

この履歴現象は第2図すの細線で示された如く、書込み
電圧の振幅やパルス幅(図示せず)に応じて任意の小ル
ープをとりうる。
As shown by the thin line in FIG. 2, this hysteresis phenomenon can take any small loop depending on the amplitude and pulse width (not shown) of the write voltage.

即ち中間調の表示も可能である。That is, it is also possible to display halftones.

一度書込み電圧を与えると、その後維持パルスによって
それぞれ与えられた階調を失わずに発光し続けるのがE
LPの他の表示素子に無い大きな特徴である。
Once a write voltage is applied, E continues to emit light without losing the gradation given by the sustain pulse.
This is a major feature not found in other LP display elements.

上記の各電圧は組成や膜厚及び印加波形により犬分異な
るが、因みに試作例ではVth= 200 V。
The above voltages vary depending on the composition, film thickness, and applied waveform, but in the prototype example, Vth = 200 V.

V=210V、■2−210〜280V、V3=190
Vである。
V=210V, ■2-210~280V, V3=190
It is V.

以上のようにヒステリシス特性を有する薄膜ELは電気
的書込を行うこともできるが、以下に述べるような光書
込も可能である。
As described above, thin film EL having hysteresis characteristics can be electrically written, but optical writing as described below is also possible.

即ち先ず第3図に示したようにELPの両端に常時交流
の維持パルスを加えながら、T2期間のみに外部から光
を照射する場合を考える。
That is, first, consider the case where light is irradiated from the outside only during the T2 period while constantly applying an alternating current sustaining pulse to both ends of the ELP as shown in FIG.

そうするとELPは光照射する前のT1期間に輝度がB
1にあったものが、光照射後のT3期間には輝度B3に
上昇する。
Then, the ELP will have a brightness of B during the T1 period before light irradiation.
1, the brightness increases to B3 during the T3 period after light irradiation.

この輝度レベルB3は勿論T2期間の長さや維持パルス
の振幅Vsやパルス幅τ及び外部光の強度や波長に大き
く依存する。
Of course, this brightness level B3 largely depends on the length of the T2 period, the amplitude Vs and pulse width τ of the sustain pulse, and the intensity and wavelength of external light.

この場合外部から光を照射すると維持パルスの印加され
ている+V8、v8中に光書込によって分極電場が発生
し、維持パルスの加わっていないOvの期間はこの分極
電場が緩和している。
In this case, when light is irradiated from the outside, a polarization electric field is generated by optical writing during +V8 and v8 when the sustain pulse is applied, and this polarization electric field is relaxed during the Ov period when no sustain pulse is applied.

光書込源の波長依存性、照射時間とELPの発光スペク
トルの関係は第4図の通りである。
The relationship between the wavelength dependence of the optical writing source, the irradiation time, and the emission spectrum of the ELP is shown in FIG.

波長3500人あたりの光に対して最も感度よく光書込
でき、ELPの発光スペクI・ルが大きい値とは離れて
いることがわかる。
It can be seen that optical writing is most sensitive to light with a wavelength of 3,500 per person, and that the emission spectra of ELP are far from large values.

一方維持パルスの振幅Vsや幅τに対する光書込後の輝
度レベルB2は第5図のような依存性を示す。
On the other hand, the brightness level B2 after optical writing on the amplitude Vs and width τ of the sustain pulse shows dependence as shown in FIG.

即ち維持電圧やパルス幅の大きい程輝度レベルB2は太
きい。
That is, the larger the sustain voltage and pulse width, the higher the brightness level B2.

本発明は以上のような特性を持つELPを例えば光書込
黒板に適用した場合の駆動回路に関する。
The present invention relates to a drive circuit in which an ELP having the above characteristics is applied to, for example, an optical writing blackboard.

光書込黒板は第6図に示すように、前述の構成のELP
5、ライトペン7、周辺駆動回路を内蔵した筺体8、維
持電圧可変ダイヤル9よりなる。
As shown in FIG. 6, the optical writing blackboard is an ELP with the above-mentioned configuration.
5, a light pen 7, a housing 8 containing a peripheral drive circuit, and a variable maintenance voltage dial 9.

ELP5は前述のように透明電極2と5がELP全面一
様に延びる形状のものでもよく、又は一方の電極2若し
くは5を縞状にして平行配置し、他方の電極5若しくは
2を上記電極とは直交する方向に縞状にして平行配置し
たもの、所謂マトリックスに形成したものでもよい。
The ELP 5 may have a shape in which the transparent electrodes 2 and 5 extend uniformly over the entire surface of the ELP as described above, or one electrode 2 or 5 may be arranged in parallel in a striped manner, and the other electrode 5 or 2 may be arranged in parallel with the above electrode. may be arranged in parallel stripes in orthogonal directions, or may be formed in a so-called matrix.

上記ELP全面同時に維持パルスを印加しておきライト
ペンで任意に英数字や記号を書込む。
Sustain pulses are simultaneously applied to the entire surface of the ELP, and alphanumeric characters and symbols are arbitrarily written with a light pen.

そして消去したい場合は可変ボリウム9を低電圧側に回
転する。
If you want to erase the data, turn the variable volume 9 to the low voltage side.

またライトペンの光源は特殊なものでなくタングステン
ランプが使えれば、コンパクトで安価なものが得られ実
用価値は非常に太きい。
Also, if you use a tungsten lamp instead of a special light source, you can get a compact and inexpensive pen, which has great practical value.

ところでタングステンランプの発光ピーク波長は可視光
でも長波長側に寄っており、第4図との関連で云えばE
LPに対して光書込感度はかなり小さい。
By the way, the emission peak wavelength of a tungsten lamp is on the long wavelength side even in visible light, and in relation to Figure 4, it is E.
The optical writing sensitivity is quite low compared to LP.

従って第5図の特性を考慮して、同じ光源に対しては維
持電圧の振幅1vslを上昇させるか(もっとも余り上
昇しすぎると第2図から分るようにコントラスト比が悪
くなるが)、パルス幅τを広くすればよい。
Therefore, considering the characteristics shown in Figure 5, for the same light source, either increase the amplitude of the sustaining voltage by 1 vsl (although if it increases too much, the contrast ratio will deteriorate as seen in Figure 2), or The width τ may be increased.

結局光書込という点からだけ云えば周波数一定の条件下
ではデユーティ比50%の印加波形が最も好ましい。
Ultimately, from the point of view of optical writing, an applied waveform with a duty ratio of 50% is most preferable under the condition of a constant frequency.

第7図はELPに維持パルスを供給する回路図を示し、
第7図において、10.・・・・・・・・・・・・13
はトランジスタ、14.・・・・・・・・・・・・17
はダイオード18はインダクタンス、19はEL、20
は可変電圧源である。
FIG. 7 shows a circuit diagram for supplying sustain pulses to ELP,
In FIG. 7, 10.・・・・・・・・・・・・13
is a transistor, 14.・・・・・・・・・・・・17
Diode 18 is inductance, 19 is EL, 20
is a variable voltage source.

第7図のトランジスタ10.・・・・・・・・・・・・
13をON、OFFさせるタイミングは第8図の通りで
ある。
Transistor 10 in FIG.・・・・・・・・・・・・
The timing for turning ON and OFF 13 is as shown in FIG.

即ち第8図aに示す信号がバイレベルのとき第7図トラ
ンジスタ11,13はON、ローレベルのときはOFF
である。
That is, when the signal shown in FIG. 8a is at bi level, the transistors 11 and 13 in FIG. 7 are turned on, and when it is at low level, they are turned off.
It is.

また第8図すの信号がバイレベルのときトランジスタ1
0.12はON、ローレベルのときOFFする。
Also, when the signal in Figure 8 is at bi level, transistor 1
0.12 is ON, and OFF when it is low level.

第8図a、bのパルス副tは第7図のコイル18のイン
ダクタンスがLCH)、19のELのキャパシタンスが
CCF)のとき となるよう選ぶ。
The pulse subt t in FIGS. 8a and 8b is selected so that the inductance of the coil 18 in FIG. 7 is LCH), and the capacitance of EL 19 is CCF).

もし回路系に損失がなく第7図の電源20の電圧がE。If there is no loss in the circuit system, the voltage of the power supply 20 in FIG. 7 is E.

とすると、ELP19の両端に印加される電圧は第8図
a、bが交互にバイレベルになる度に+2Eo、−4E
o、+6Eo、・・・・・・・・・・・・と振幅は上昇
していき、理論的には無限大の振幅になる筈である。
Then, the voltage applied across the ELP 19 increases by +2Eo and -4E each time a and b in Fig. 8 alternately become bi-level.
o, +6Eo, . . . , the amplitude increases, and theoretically it should reach an infinite amplitude.

然し実際問題として、トランジスタのON抵抗やダイオ
ードの順方向抵抗及びELの電極抵抗やその他種々の抵
抗損失があり、更に振幅の上昇に伴う電流上昇からくる
インダクタンスコアの飽和現象等々から第8図Cに示し
たようにEL印加電圧の振幅は飽和値に達する。
However, as a practical problem, there are various resistance losses such as the ON resistance of the transistor, the forward resistance of the diode, the electrode resistance of the EL, and the saturation phenomenon of the inductance core due to the increase in current as the amplitude increases. As shown in , the amplitude of the EL applied voltage reaches the saturation value.

この時の電圧が維持電圧V1 になるよう設定しておく
The voltage at this time is set to be the maintenance voltage V1.

従っである過渡時間を経れば一定振幅のデユーティ比5
0%の両極性パルスがELの両端に印加されることにな
る。
Therefore, after a certain transient time, the duty ratio of constant amplitude becomes 5.
A 0% bipolar pulse will be applied across the EL.

因みに我々の試作例ではキャパシタンス約30000P
FのELPK対1.−CV。
By the way, in our prototype, the capacitance is about 30,000P.
F's ELPK vs. 1. -CV.

=40Vで±200■のデユーティ比50%の印加電圧
が得られた。
=40V, an applied voltage with a duty ratio of 50% of ±200μ was obtained.

またELに上記交流電圧(但し300Hz)を印加しな
がら1ワツトのタングステンランプで十分光書込みがで
きた。
Further, while applying the above-mentioned alternating voltage (300 Hz) to the EL, sufficient optical writing was possible with a 1 watt tungsten lamp.

光書込みされた文字、記号或いは模様は、ELPの光書
込みのときの感度と、ELPの発光スペクトルが第4図
に示すように異っており、且つELPの発光時間は維持
パルスのパルス巾であるから電極2,5がマトリックス
状の場合は電圧印加部分が互いに独立しているため勿論
のこと、電極2,5が全面一様に延びるように形成され
ている場合でも発光領域が非発光領域へにじみでること
がない。
The optically written characters, symbols, or patterns are different in the sensitivity of the ELP during optical writing and the emission spectrum of the ELP as shown in Figure 4, and the emission time of the ELP is different from the pulse width of the sustain pulse. Of course, if the electrodes 2 and 5 are in a matrix shape, the voltage application parts are independent of each other, and even if the electrodes 2 and 5 are formed to extend uniformly over the entire surface, the light-emitting area is the non-light-emitting area. It never bleeds.

また一旦光書込みされたパネルを消去するには、第6図
のダイアル9を回転して、第7図の電源電圧20を低い
方にすれば、ELの両端には消去電圧パルスが与えられ
る。
Furthermore, in order to erase a panel that has been optically written, by rotating the dial 9 in FIG. 6 and lowering the power supply voltage 20 in FIG. 7, an erase voltage pulse is applied to both ends of EL.

このように薄膜ELが大きなキャパシタンスを有してい
るのでインダクタンスと組み合わせて共振回路を構成し
、適当なタイミングでスイッチング素子を0N−OFF
すれば、発光開始電圧よりはるかに低い1つの電源電圧
で光書込装置を構成できる。
Since the thin film EL has a large capacitance, it can be combined with an inductance to form a resonant circuit, and the switching element can be turned on and off at appropriate timing.
In this way, an optical writing device can be configured with one power supply voltage that is much lower than the light emission starting voltage.

尚第7図において用いたトランジスタは全てNPN型で
あるが、PNP型を用いてもよいのは勿論である。
Although all the transistors used in FIG. 7 are of the NPN type, it goes without saying that a PNP type may also be used.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はELPの断面図、第2図はELPO印加電圧と
発光輝度の関係図、第3図は光書込み時にELPに印加
される電圧波形図、第4図はELPの受光感度波長と発
光波長の関係図、第5図はELPの印加波形と発光輝度
の関係図、第6図は本発明の一実施例を構成する光書込
み板の斜視図、第7図は本発明の一実施例の、駆動回路
図、第8図は第7図の回路のタイムチャートである。 2は電極、3,3′は誘電物質層、4は螢光層、10〜
13はトランジスタ、18はコイル 20は電源。
Figure 1 is a cross-sectional view of the ELP, Figure 2 is a diagram of the relationship between the ELPO applied voltage and luminance, Figure 3 is a voltage waveform diagram applied to the ELP during optical writing, and Figure 4 is the ELP's light sensitivity wavelength and luminescence. 5 is a diagram showing the relationship between ELP applied waveform and luminance; FIG. 6 is a perspective view of an optical writing plate constituting an embodiment of the present invention; FIG. 7 is a diagram showing an embodiment of the present invention. FIG. 8 is a time chart of the circuit shown in FIG. 7. 2 is an electrode, 3, 3' is a dielectric material layer, 4 is a fluorescent layer, 10-
13 is a transistor, 18 is a coil, and 20 is a power supply.

Claims (1)

【特許請求の範囲】[Claims] 1 螢光層の両側にそれぞれ誘電物質層と電極を設けて
なる薄膜エレクトロルミネッセンスパネルの駆動回路に
おいて、上記薄膜エレクトロルミネッセンスパネルに1
個のコイルを接続して直列共振回路を構成し、光書込み
をするに際して該直列共振回路に1個の直流電源を交互
に逆方向接続するスイッチ素子を接続して交流維持パル
スを印加することを特徴とする薄膜エレクトロルミネッ
センスパネルの駆動回路。
1. In a drive circuit for a thin film electroluminescent panel in which a dielectric material layer and an electrode are provided on both sides of a fluorescent layer, the thin film electroluminescent panel has 1
A series resonant circuit is formed by connecting several coils, and when performing optical writing, a switching element is connected to the series resonant circuit to alternately connect one DC power source in the reverse direction to apply an AC sustaining pulse. Features a drive circuit for thin-film electroluminescent panels.
JP51115092A 1976-09-25 1976-09-25 Drive circuit for thin film electroluminescent panel Expired JPS5828597B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51115092A JPS5828597B2 (en) 1976-09-25 1976-09-25 Drive circuit for thin film electroluminescent panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51115092A JPS5828597B2 (en) 1976-09-25 1976-09-25 Drive circuit for thin film electroluminescent panel

Publications (2)

Publication Number Publication Date
JPS5340292A JPS5340292A (en) 1978-04-12
JPS5828597B2 true JPS5828597B2 (en) 1983-06-16

Family

ID=14653994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51115092A Expired JPS5828597B2 (en) 1976-09-25 1976-09-25 Drive circuit for thin film electroluminescent panel

Country Status (1)

Country Link
JP (1) JPS5828597B2 (en)

Also Published As

Publication number Publication date
JPS5340292A (en) 1978-04-12

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