JPS5834930B2 - How to get the best results - Google Patents
How to get the best resultsInfo
- Publication number
- JPS5834930B2 JPS5834930B2 JP5582573A JP5582573A JPS5834930B2 JP S5834930 B2 JPS5834930 B2 JP S5834930B2 JP 5582573 A JP5582573 A JP 5582573A JP 5582573 A JP5582573 A JP 5582573A JP S5834930 B2 JPS5834930 B2 JP S5834930B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide film
- silicon oxide
- diffusion
- impurity
- mixed oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- Weting (AREA)
Description
【発明の詳細な説明】
本発明は半導体への不純物拡散に利用した不純物含有酸
化物膜の除去方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for removing an impurity-containing oxide film used for impurity diffusion into a semiconductor.
シリコンやゲルマニウムのような半導体への不純物元素
導入法のひとつにドープドオキサイド法と呼ばれる拡散
処理技術がある。One of the methods of introducing impurity elements into semiconductors such as silicon and germanium is a diffusion treatment technique called the doped oxide method.
このオーブトオキサイド法は、たとえばシリコンやゲル
マニウムでの多数キャリア源となる砒素、燐もしくはほ
う素等の不純物を含む酸化シリコン（Ｓ ｉ０２ ）を
半導体結晶の表面に付設し、この不純物含有酸化シリコ
ン膜を拡散源として、不純物を結晶内に拡散導入させる
処理技術である。In this orb oxide method, for example, silicon oxide (S i02 ) containing impurities such as arsenic, phosphorus, or boron, which is a majority carrier source in silicon or germanium, is attached to the surface of a semiconductor crystal, and this impurity-containing silicon oxide film is This is a processing technology in which impurities are diffused into the crystal using a diffusion source.
この処理技術を半導体装置を製作するための選択拡散に
適用する場合には、予め半導体結晶上に拡散防止用のマ
スク材たとえば不純物を含まないＳｉＯ２膜を所定の形
状に付設したのち、この半導体結晶基板の全面に上記不
純物含有酸化シ′リコン膜を付設し、ついで拡散処理を
おこなう方法がとられる。When applying this processing technology to selective diffusion for manufacturing semiconductor devices, a mask material for preventing diffusion, such as a SiO2 film containing no impurities, is applied in advance onto the semiconductor crystal in a predetermined shape, and then the semiconductor crystal is A method is used in which the impurity-containing silicon oxide film is applied to the entire surface of the substrate, and then a diffusion treatment is performed.
この場合、拡散処理後において不純物含有酸化シリコン
膜を除去する際にマスク材の５ｉ０２膜が同時に除去さ
れてしまうという不都合を生じる。In this case, when the impurity-containing silicon oxide film is removed after the diffusion process, the 5i02 film of the mask material is removed at the same time.
これは不純物含有様化シリコン膜とマスク材とが同質で
あって、蝕刻液に対する溶解速度が同程度であることか
ら避は得ないことである。This is unavoidable since the impurity-containing silicon film and the mask material are of the same quality and have approximately the same dissolution rate in the etching solution.
本発明は半導体基板上に酸化シリコン膜を所定の形状に
形成する工程と、前記半導体基板および前記酸化シリコ
ン膜の上に、砒素、燐もしくはほう素等の拡散用不純物
を含有する酸化シリコン・酸化ゲルマニウムの混合酸化
物膜を生成する工程と、前記混合酸化物膜を熱塩酸に浸
漬する工程と弗酸を含む蝕刻液で前記混合酸化物膜を溶
解除去する工程とをそなえたことを特徴とする拡散用不
純物含有酸化物膜の除去方法である。The present invention includes a step of forming a silicon oxide film in a predetermined shape on a semiconductor substrate, and a step of forming a silicon oxide film containing a diffusion impurity such as arsenic, phosphorus, or boron on the semiconductor substrate and the silicon oxide film. It is characterized by comprising a step of generating a mixed oxide film of germanium, a step of immersing the mixed oxide film in hot hydrochloric acid, and a step of dissolving and removing the mixed oxide film with an etchant containing hydrofluoric acid. This is a method for removing an oxide film containing impurities for diffusion.
酸化シリコン・酸化ゲルマニウムを主成分とする混合酸
化物膜は熱塩酸で処理することにより、同膜中の酸化ゲ
ルマニウム（Ｇｅ０２）が溶解され不溶の酸化シリコン
が多孔質の状態で残る。When a mixed oxide film containing silicon oxide and germanium oxide as main components is treated with hot hydrochloric acid, the germanium oxide (Ge02) in the film is dissolved and the insoluble silicon oxide remains in a porous state.
そこでこの多孔質酸化ウリコン膜はマスク材の緻密な酸
化シリコンより蝕刻液に刻する溶解速度が高いものにな
る。Therefore, this porous uricon oxide film has a higher dissolution rate in the etching solution than the dense silicon oxide film of the mask material.
図面は本発明の実施例を示し、不純物含有の混合酸化物
膜として、ＳｉＯ□−Ｇ ｅ ０２Ｂ２０３ Ａｓ２
Ｏ３系の酸化膜を塩酸で煮沸処理したときのＮＨ４Ｆ：
ＨＰ系蝕刻液に対する溶解速度である。The drawings show examples of the present invention, in which SiO□-G e 02B203 As2 is used as an impurity-containing mixed oxide film.
NH4F when O3-based oxide film is boiled with hydrochloric acid:
This is the dissolution rate for HP-based etchant.
この実施例では混合酸化物として、ＧｅＨ４：ＳｉＨ４
： Ｂ２Ｈ６：ＡｓＩ（３＝１０ ： ８０ ： ５
： ２０なる組成の反応気体の熱分解で得た被膜を用い
、これによって、１．０５０℃での拡散処理を行なった
のち、これをＨＣｌ：Ｈ２０＝１ ： ５の組成の塩酸
で煮沸したのち、ＮＨＦ ： ＨＦ＝１０ ： １．５
なる組成成分を含む蝕刻液で処理したものの溶解速度の
変化を実線で現わしている。In this example, the mixed oxide is GeH4:SiH4
: B2H6:AsI(3=10:80:5
: Using a film obtained by thermal decomposition of a reaction gas with a composition of 20, it was subjected to a diffusion treatment at 1.050°C, and then boiled with hydrochloric acid with a composition of HCl:H20 = 1:5. ,NHF:HF=10:1.5
The solid line shows the change in dissolution rate of the sample treated with an etching solution containing the following composition components.
また、同図中の点線で示す特性は−Ｌ述の本実施例王程
での塩酸煮沸を水（Ｈ２０）のみの煮沸に置き換えた場
合の例である。Further, the characteristics shown by the dotted line in the figure are an example where the boiling in hydrochloric acid in the present embodiment described in -L is replaced with boiling only with water (H20).
発明者の経験によれば、混合酸化物中の酸化ゲルマニウ
ムの比率は３〜９０％の範囲であれば、塩酸の濃度は１
０％〜２５係程度が好都合であり、本発明の処理を行な
うと純酸化シリコンの溶解速度の２〜１０倍という顕著
な溶解性を示した。According to the inventor's experience, if the ratio of germanium oxide in the mixed oxide is in the range of 3 to 90%, the concentration of hydrochloric acid is 1.
A ratio of about 0% to 25% is convenient, and the treatment of the present invention showed remarkable solubility of 2 to 10 times the dissolution rate of pure silicon oxide.
したがって、本発明によれば、選択拡散側マスク材の酸
化シリコン膜を溶解することなく、不純物源の混合酸化
物膜のみを有効に除去することができる。Therefore, according to the present invention, only the mixed oxide film serving as the impurity source can be effectively removed without dissolving the silicon oxide film serving as the mask material on the selective diffusion side.
なお、上述の混合酸化物膜を熱塩酸に浸漬する際、上記
酸化物膜を１．０００℃〜１．１００℃の範囲に熱処理
しておくと、酸化物膜がきわめて良好に溶解除去しうる
。In addition, when the above-mentioned mixed oxide film is immersed in hot hydrochloric acid, if the above-mentioned oxide film is heat-treated in the range of 1.000°C to 1.100°C, the oxide film can be dissolved and removed very well. .
図面は本発明の実施例で得られた特性図である。 The drawing is a characteristic diagram obtained in an example of the present invention.
Claims (1)
する工程と、前記半導体基板および前記酸化シリコン膜
の上に、砒素、燐もしくはほう素等の拡散用不純物を含
有する酸化シリコン・酸化ゲルマニウムの混合酸化物膜
を生成する工程と、前記混合酸化物膜を熱塩酸に浸漬す
る工程と、ついで弗酸を含む蝕刻液で前記混合酸化物膜
を溶解除去する工程とをそなえたことを特徴とする拡散
用不純物含有酸化物膜の除去方法。1. A step of forming a silicon oxide film in a predetermined shape on a semiconductor substrate, and a step of forming a silicon oxide/germanium oxide film containing diffusion impurities such as arsenic, phosphorus, or boron on the semiconductor substrate and the silicon oxide film. It is characterized by comprising the steps of generating a mixed oxide film, immersing the mixed oxide film in hot hydrochloric acid, and then dissolving and removing the mixed oxide film with an etchant containing hydrofluoric acid. A method for removing an oxide film containing impurities for diffusion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5582573A JPS5834930B2 (en) | 1973-05-18 | 1973-05-18 | How to get the best results |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5582573A JPS5834930B2 (en) | 1973-05-18 | 1973-05-18 | How to get the best results |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS507478A JPS507478A (en) | 1975-01-25 |
| JPS5834930B2 true JPS5834930B2 (en) | 1983-07-29 |
Family
ID=13009723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5582573A Expired JPS5834930B2 (en) | 1973-05-18 | 1973-05-18 | How to get the best results |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5834930B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2624047C3 (en) * | 1976-05-28 | 1980-07-03 | Dr. Rentschler Arzneimittel Gmbh & Co, 7958 Laupheim | Mass culture of cells and chamber system to carry them out |
| US6333245B1 (en) * | 1999-12-21 | 2001-12-25 | International Business Machines Corporation | Method for introducing dopants into semiconductor devices using a germanium oxide sacrificial layer |
-
1973
- 1973-05-18 JP JP5582573A patent/JPS5834930B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS507478A (en) | 1975-01-25 |
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