JPS5943821B2 - Houso Gan Yuuhi Makunojiyokiyohouhou - Google Patents
Houso Gan Yuuhi MakunojiyokiyohouhouInfo
- Publication number
- JPS5943821B2 JPS5943821B2 JP13537075A JP13537075A JPS5943821B2 JP S5943821 B2 JPS5943821 B2 JP S5943821B2 JP 13537075 A JP13537075 A JP 13537075A JP 13537075 A JP13537075 A JP 13537075A JP S5943821 B2 JPS5943821 B2 JP S5943821B2
- Authority
- JP
- Japan
- Prior art keywords
- boron
- yuuhi
- makunojiyokiyohouhou
- houso
- gan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Weting (AREA)
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、シリコン結晶（Ｓｉ）に高濃度ほう素 、（
Ｂ済拡散した結果生ずる、難溶性のＢ。[Detailed Description of the Invention] Industrial Application Field The present invention is directed to silicon crystal (Si) containing a high concentration of boron (
Poorly soluble B produced as a result of B diffusion.
Ｏ。一ＳｉＯ２−Ｂ−Ｓｉ膜（以下、難溶性被膜と略す
）を除去する方法に関するものである。従来例の構成と
その問題点
シリコン結晶にほう素を高濃度に拡散導入する Ｊには
、一般に、ジボラン（Ｂ２Ｈ６）窒化ほう素（ＢＮ）あ
るいはハロゲン化ほう素（ＢＣｌ３、ＢＢｒ３など）を
拡散源として拡散される。O. This invention relates to a method for removing a SiO2-B-Si film (hereinafter abbreviated as a poorly soluble film). Conventional structure and its problems Boron is diffused into silicon crystal at high concentration. In general, diborane (B2H6), boron nitride (BN), or boron halide (BCl3, BBr3, etc.) is used as a diffusion source. It is spread as.
これらのＢ２Ｈ６、ＢＮ、ＢＢｒ３は拡散後Ｂ２Ｏ３−
ＳｉＯ２−Ｂ−Ｓｉの形で表面に形成され、この膜をＨ
Ｆ溶液で食刻することはきわめて困難である。たとえぱ
、従来の代表的な食刻方法をのべると、あらかじめ硝酸
で試料体を煮沸後、水蒸気を含んだ酸素もしくは酸素の
みの気流にさらし、Ｓｉ結晶表面を酸化して、食刻され
にくいＢ−Ｓｉを、Ｂ２Ｏ３−ＳｉＯ３の形に変えたの
ち、ＨＦ溶液に、て食刻していた。しかし、この方法を
もちいても完全に除去することは、困難であるのみなら
ず、酸化の過程でシリコン結晶中の拡散プロファイルが
変化するおそれがある。また、この難溶性被膜が厚い場
合、もしくは、非常に高濃度である場合、この上にホト
エッチング法をもちいて、窓あけ形成をすると、食刻速
度が遅く長時間必要であり、工業的に実施するのはきわ
めて不適当であり、加えて完全に食刻除去されないため
に、しばしば接触不良などの発生の原因となつた。These B2H6, BN, BBr3 become B2O3- after diffusion.
Formed on the surface in the form of SiO2-B-Si, this film is
Etching with F solution is extremely difficult. For example, in a typical conventional etching method, a sample is boiled in nitric acid in advance, and then exposed to an airflow containing water vapor or oxygen alone to oxidize the Si crystal surface, making it difficult to etch B. -Si was changed into the form of B2O3-SiO3 and then etched in an HF solution. However, even with this method, it is not only difficult to completely remove it, but also the diffusion profile in the silicon crystal may change during the oxidation process. In addition, if this poorly soluble film is thick or has a very high concentration, forming windows on it using photoetching will require a long time due to the slow etching speed, making it industrially difficult to form. It is extremely inappropriate to carry out this process, and in addition, the etching is not completely removed, which often causes problems such as poor contact.
発明の目的
本発明は、これらの問題点を解決した高濃度ホウ素含有
の難溶性被膜の除去方法を提案するものである。OBJECTS OF THE INVENTION The present invention proposes a method for removing a poorly soluble film containing a high concentration of boron, which solves these problems.
発明の構成
本発明の方法は、シリコン結晶に、ろう素を用いて、高
濃度のＰ型不純物領域を拡散形成したのち、この拡散で
生じた、Ｂ２Ｏ３−ＳｉＯ２−Ｂ−Ｓｉ系成分の難溶性
被膜を除去するにあたり、該難溶性被膜をシリコン結晶
基体と共に加熱保持し、アンモニアガス中にさらしたの
ち、ＨＦ溶液にて食刻する工程を有するものである。Structure of the Invention The method of the present invention is to diffuse and form a highly concentrated P-type impurity region in a silicon crystal using wax, and then to form a poorly soluble B2O3-SiO2-B-Si based component produced by this diffusion. In removing the coating, the hardly soluble coating is heated and held together with the silicon crystal substrate, exposed to ammonia gas, and then etched with an HF solution.
本発明の方法によれば、上記難溶性被膜がシリコン結晶
表面における高濃度ホウ素に、窒素囚〔ｊ導入されるこ
とによつて、ＨＦ溶液によつて食刻されやすくなる。According to the method of the present invention, the hardly soluble coating is easily etched by the HF solution by introducing nitrogen traps into the high concentration boron on the surface of the silicon crystal.
実施例の説明
本発明の一実施例として、たとえばシリコン基体へ、ジ
ボラン（Ｂ２Ｈ６）を用いてＰ型不純物の拡散導入を行
なつた後、このシリコン基体を６００〜１０００℃に加
熱保持し、２１／Ｍｉｎのアンモニアガスに６０分間さ
らし、この基体を、ＨＦ：弗化アンモニウム溶液で食刻
した結果、従来の約１／２の時間で食刻された。DESCRIPTION OF EMBODIMENTS As an embodiment of the present invention, for example, diborane (B2H6) is used to diffuse and introduce a P-type impurity into a silicon substrate, and then the silicon substrate is heated and maintained at 600 to 1000°C. /Min for 60 minutes, and the substrate was etched with an HF:ammonium fluoride solution, resulting in etching in about 1/2 of the conventional time.
また、シリコン表面は、アンモニアガスによつて浸され
ないためきれいな鏡面のものがえられた。発明の効果
以上のように、本発明によれば容易に上記難溶性被膜が
除去できるので工業的価値が高いものである。Furthermore, since the silicon surface was not soaked by ammonia gas, a clean mirror surface was obtained. Effects of the Invention As described above, according to the present invention, the above-mentioned poorly soluble coating can be easily removed, and therefore, the present invention has high industrial value.
Claims (1)
ほう素（Ｂ＿２Ｏ＿３）、酸化けい素（ＳｉＯ＿２）、
ほう素（Ｂ）およびけい素（Ｓｉ）を有する難溶性被膜
を除去するにあたり、試料体を加熱保持し、上記難溶性
被膜をアンモニア気流にさらし、その後弗酸溶液にて上
記難溶性被膜を食刻するほう素含有被膜の除去方法。1 Boron oxide (B_2O_3), silicon oxide (SiO_2), which are generated when boron is diffused into a semiconductor crystal,
To remove the poorly soluble coating containing boron (B) and silicon (Si), the sample body is heated and held, the hardly soluble coating is exposed to an ammonia stream, and then the sparingly soluble coating is eroded with a hydrofluoric acid solution. How to remove a boron-containing coating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13537075A JPS5943821B2 (en) | 1975-11-10 | 1975-11-10 | Houso Gan Yuuhi Makunojiyokiyohouhou |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13537075A JPS5943821B2 (en) | 1975-11-10 | 1975-11-10 | Houso Gan Yuuhi Makunojiyokiyohouhou |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59107525A Division JPS6016097B2 (en) | 1984-05-29 | 1984-05-29 | How to remove boron-containing film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5259578A JPS5259578A (en) | 1977-05-17 |
| JPS5943821B2 true JPS5943821B2 (en) | 1984-10-24 |
Family
ID=15150124
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13537075A Expired JPS5943821B2 (en) | 1975-11-10 | 1975-11-10 | Houso Gan Yuuhi Makunojiyokiyohouhou |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5943821B2 (en) |
-
1975
- 1975-11-10 JP JP13537075A patent/JPS5943821B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5259578A (en) | 1977-05-17 |
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