JPS5845006B2 - light modulator - Google Patents
light modulatorInfo
- Publication number
- JPS5845006B2 JPS5845006B2 JP50155271A JP15527175A JPS5845006B2 JP S5845006 B2 JPS5845006 B2 JP S5845006B2 JP 50155271 A JP50155271 A JP 50155271A JP 15527175 A JP15527175 A JP 15527175A JP S5845006 B2 JPS5845006 B2 JP S5845006B2
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- JP
- Japan
- Prior art keywords
- crystal
- light
- electric field
- electro
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000013078 crystal Substances 0.000 claims description 57
- 230000003287 optical effect Effects 0.000 claims description 22
- 230000005540 biological transmission Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 26
- 230000000694 effects Effects 0.000 description 8
- 239000000203 mixture Substances 0.000 description 7
- 230000000737 periodic effect Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 241000566113 Branta sandvicensis Species 0.000 description 1
- 230000005697 Pockels effect Effects 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000012866 crystallographic experiment Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
Landscapes
- Inorganic Insulating Materials (AREA)
Description
【発明の詳細な説明】
本発明は光ビームの位相や振幅を時間的に変調する光変
調器、とくに誘電体結晶の電気光学効果を使った光変調
器に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an optical modulator that temporally modulates the phase and amplitude of a light beam, and particularly to an optical modulator that uses the electro-optic effect of a dielectric crystal.
光ビームを電気信号に応じて高速に変調する光変調器は
、光通信や光情報処理のように高速大容量の情報を伝達
、処理するシステムの装置には必要不可欠な素子である
。Optical modulators that modulate light beams at high speed according to electrical signals are essential elements for systems that transmit and process high-speed, large-capacity information, such as optical communications and optical information processing.
結晶の光に対する屈折率が、印加した電界に比例して変
化する効果、すなわちポッケルス効果を使った電気光学
光変調器は、他の効果たとえば機械振動や音響光学効果
を使った光変調器に比べて広い帯域幅をもっているため
、はるかに速い速度で光を変調することができる。Electro-optic light modulators that use the Pockels effect, in which the refractive index of a crystal changes in proportion to the applied electric field, are more effective than light modulators that use other effects, such as mechanical vibration or acousto-optic effects. Because they have a wide bandwidth, they can modulate light at much faster speeds.
このため上記の目的のために広く用いられようとしてい
る。Therefore, it is becoming widely used for the above purpose.
従来の電気光学効果を使った光変調器の原理は、以下に
述べるように広く理解されでいる。The principle of conventional optical modulators using electro-optic effects is widely understood as described below.
例えば現在もつとも良く使わイする強誘電体結晶LiT
aO3結晶では、最大の電気光学効果の得られる方向の
Z軸方向に電界を印加し、それに直交する方向たとえば
X軸方向から光ビームを透過する。For example, ferroelectric crystal LiT, which is currently very commonly used.
In the aO3 crystal, an electric field is applied in the Z-axis direction, which is the direction in which the maximum electro-optic effect is obtained, and a light beam is transmitted from a direction perpendicular to the Z-axis direction, for example, the X-axis direction.
印加した電界の強度Fzによって、透過する光波に対す
るy軸方向及びZ軸方向の屈折率は、n =n −n
3r13E2/2、n 2=n e−n c3r33E
z/2となる。Depending on the strength Fz of the applied electric field, the refractive index in the y-axis direction and the Z-axis direction for the transmitted light wave is n = n - n
3r13E2/2, n2=n e-n c3r33E
It becomes z/2.
ここでは。。 noはそれぞれ、常光線、異常光線に対
する屈折率、r13+ r33は電気光学定数である。here. . no is the refractive index for ordinary rays and extraordinary rays, and r13+r33 are electro-optic constants.
透過する光ビームの偏光面はy軸及びZ軸から45°傾
いた直線偏光である。The polarization plane of the transmitted light beam is linearly polarized light inclined at 45° from the y-axis and the Z-axis.
結晶の出射面でy軸及びZ軸方向の光電赤成分の間に生
ずる位相差φは、φ−(2π/入)・l・(n2’−n
、)となる。The phase difference φ that occurs between the photoelectric red components in the y-axis and Z-axis directions at the exit surface of the crystal is φ-(2π/in)・l・(n2'-n
,) becomes.
ここで人は光の波長、lは結晶の光伝搬方向の長さであ
る。Here, λ is the wavelength of light, and l is the length of the crystal in the light propagation direction.
位相差φがπとなるように電界を印加すれば、出射光の
偏光面は入射光のそれと直交した直線偏光となる。If an electric field is applied so that the phase difference φ becomes π, the polarization plane of the emitted light becomes linearly polarized light orthogonal to that of the incident light.
出射光を検光子に透過させることによって、印加した電
界の強さに応じて検光子を透過する光の強度が変化し、
光の振幅変調が達成される。By passing the emitted light through the analyzer, the intensity of the light passing through the analyzer changes depending on the strength of the applied electric field.
Amplitude modulation of the light is achieved.
電界印加前後の位相差はπ与える電圧■πは、■π=人
(dll )/(n o3r33 n o3r13)
で与えられる。The phase difference before and after the electric field is applied is π The applied voltage ■π is ■π = person (dll)/(no3r33 no3r13)
is given by
ここでdは電極間距離である。Here, d is the distance between the electrodes.
dll=1としたときの■πは半波長電界距離積(E−
CI入/Zとよばれ、変調媒体の電気光学的な性能を表
わす指標の1つである。■π when dll=1 is the half-wavelength electric field distance product (E-
It is called CI input/Z and is one of the indicators representing the electro-optical performance of a modulation medium.
L IT a 03結晶は優れた電気光学結晶であり、
現在上記のような原理に基づいた光変調器用の材料とし
て広く使われている。L IT a 03 crystal is an excellent electro-optic crystal,
Currently, it is widely used as a material for optical modulators based on the above principle.
しかしながら、従来の光変調はいくつかの難点をもって
いる。However, conventional optical modulation has several drawbacks.
たとえは前弐の位相差φの中には印加する電界の強さに
依存しない頃、いわゆる自然複屈折による頃(2π/入
) l (n e n o )が含まれている。For example, the phase difference φ at the front end includes a period (2π/in) l (n e no ) which is independent of the strength of the applied electric field and is due to so-called natural birefringence.
このため周囲温度の変化によって変調動作が不安定とな
る。Therefore, the modulation operation becomes unstable due to changes in ambient temperature.
この自然複屈折項の温度依存性を補償するために、よく
知られているように長さの等しい2個の変調結晶の間に
入/2板を挿入する、長さの等しい2個の結晶の電界印
加軸たとえば上記の例ではC軸を互いに直交させるなど
の方法が試みられている。In order to compensate for the temperature dependence of this natural birefringence term, two crystals of equal length are inserted, as is well known, into two modulation crystals of equal length and an inlet/half plate inserted between them. Attempts have been made to make the electric field application axes, for example, the C-axes orthogonal to each other in the above example.
これらの方法は、2つの結晶の幾何形状的な配置におい
て理想的に配置されていれば、上記の影響を補償するこ
とができるが、2つの結晶の長さの不揃い、結晶軸の直
交度の不充全さかあると、完全な補償を施すことができ
ないため、実際の作製時での結晶の加工や組立に複雑さ
が増す。These methods can compensate for the above effects if the two crystals are ideally arranged geometrically; If there is any imperfection, complete compensation cannot be made, which increases the complexity of processing and assembling the crystal during actual fabrication.
また使用する結晶の内部に上記の自然複屈折の不均質な
部分があると、消光度の劣化を生ずる。Furthermore, if there is a portion with the above-mentioned non-uniform natural birefringence inside the crystal used, the degree of extinction will deteriorate.
このためc)n10ffのフントラストの高いことを必
要とするような光シャックのようなものえの利用には不
都合である場合がある。For this reason, c) it may be inconvenient for use in things like optical shacks that require a high n10ff load rating.
本発明の目的は、上記の難点を解消し、高性能で安定な
電気光学光変調器を提供することにある。An object of the present invention is to solve the above-mentioned difficulties and provide a high-performance and stable electro-optic light modulator.
本発明によれば、P bo HxNb 205 (]、
、5≦xく2.1;xはモル比)と表わせる単結晶を電
気光学変調結晶とし、該変調結晶の光ビーム透過方向に
分割して電界印加電極を配置させることによって、高性
能で高安定の光変調素子が得られる。According to the invention, P bo HxNb 205 (],
, 5 ≤ A highly stable light modulation element can be obtained.
上記の、従来の光変調器のもつ難点、すなわち自然複屈
折の影響は、結晶軸方向に振動する2つの結合すること
のない独立な光電異成分の、合成した振動軌跡が外部電
界によって変化することを用いていることにその生国を
もとめることができよう。The above-mentioned difficulty with conventional optical modulators, namely the influence of natural birefringence, is that the combined vibration locus of two independent photoelectric components vibrating in the crystal axis direction is changed by an external electric field. The country of birth can be traced to the use of the word.
これに対して、本発明のような構成とすることによって
上記の影響を免れることができる。On the other hand, by adopting the configuration of the present invention, the above-mentioned influence can be avoided.
本発明の原理は以下に述べる如くである。The principle of the present invention is as described below.
すなわち、電界のない場合には互いに直交して独立に伝
播する結晶の主軸方向に振動する光電異成分の間に、外
部電界を印加することによって、結合を生ぜせしめるよ
うな電気光学定数テンソル成分を有する結晶を光変調媒
体とし、適宜なる方向に電極を設けて電界を印加すれば
、結晶の主軸方向のみの振動電界成分を有する直線偏光
光の入射光は、結晶を透過するにつれそれに直交した直
線偏光光えと変換される。In other words, by applying an external electric field between the photoelectric different components that vibrate in the direction of the principal axis of the crystal, which propagate independently and orthogonally to each other in the absence of an electric field, we can create electro-optic constant tensor components that cause coupling. By using a crystal as a light modulation medium and applying an electric field by providing electrodes in appropriate directions, incident linearly polarized light having an oscillating electric field component only in the direction of the main axis of the crystal will change to a straight line perpendicular to it as it passes through the crystal. It is converted into polarized light.
出射した光を検光子に透過すれば光の強度変調が達成さ
れる。Light intensity modulation is achieved by transmitting the emitted light through an analyzer.
この過程は前述の従来の2つの直交する光電異成分の間
の位相差を利弔するのではなく、振幅の変化を利用して
いるため、前述の自然複屈折の影響は無い。This process does not utilize the phase difference between the two orthogonal photoelectric different components as described above, but utilizes a change in amplitude, so there is no effect of the above-mentioned natural birefringence.
上記の入射光が振動方向の直交する成分にエネルギーが
全て変換されるためには、2つの成分それぞれの伝播定
数、すなわち屈折率が等しいか、または伝播定数の差に
等しい波数ベクトルをもつ電気光学定数の周期性(また
は印加電界の周期性)が存在することが必要である。In order for all of the energy of the above incident light to be converted into components perpendicular to the vibration direction, it is necessary for the two components to have the same propagation constant, that is, the refractive index, or to have a wave number vector equal to the difference in propagation constant. It is necessary that there be a constant periodicity (or periodicity of the applied electric field).
知られている電気光学結晶の多くは、直交する2つの光
電異成分の伝播定数すなわち屈折率楕円体の主軸方向の
屈折率は異なる。In many known electro-optic crystals, the propagation constants of two orthogonal photoelectric different components, that is, the refractive indexes in the principal axis direction of the refractive index ellipsoid are different.
したがって上記の原理による光変調器を構成するには周
期的な電界を印加するための電極、を設けなければなら
ない。Therefore, in order to construct an optical modulator based on the above principle, electrodes for applying a periodic electric field must be provided.
しかし通常の結晶ではこの屈折率差が大きいため、電極
の周期間隔を細かくする必要があり、このことから、結
晶に一様な電界が印加されにくい。However, in a normal crystal, this difference in refractive index is large, so the periodic spacing of the electrodes must be made fine, and this makes it difficult to apply a uniform electric field to the crystal.
誘電体結晶基板の表面近くに光エネルギーをとじこめる
技術いわゆる光集積回路技術の分野で明らかになってい
るように、基板の表面近くを伝播する多数の光の伝播モ
ードの伝播定数は非常に近接しているため、基板が電気
光学効果を有しておれば、比較的周期間隔の粗い電極で
上記の動作は実現できるが、周知の如く、レーザ等の光
源かな発する光ビームを、上記の基板表面近くを伝播す
る導波モードに結合入射させ、またこれを再び空気中に
ビーム状として取出すのは、かなりの技術的な困難さを
伴い、調整の容易な簡便な光変調器を提供することがで
きない。Technology for confining optical energy near the surface of a dielectric crystal substrate As has become clear in the field of so-called optical integrated circuit technology, the propagation constants of many light propagation modes propagating near the surface of a substrate are very close to each other. Therefore, if the substrate has an electro-optic effect, the above operation can be achieved with electrodes with relatively coarse periodic intervals, but as is well known, the light beam emitted by a light source such as a laser is Coupling the guided mode into the nearby propagating mode and extracting it back into the air as a beam involves considerable technical difficulty, and it is difficult to provide a simple optical modulator that is easy to adjust. Can not.
本発明の特徴は本発明者の一人によって単結晶育成に成
功した新らしい強誘電結晶PbO−xNb205(1,
5≦X≦2.1:xはモル比)を電気光学変調媒体とし
て用い、前述の如くの構成の光変調素子を実現すること
にある。The feature of the present invention is a new ferroelectric crystal PbO-xNb205 (1,
5≦X≦2.1 (x is the molar ratio) as an electro-optic modulation medium to realize a light modulation element having the above-mentioned configuration.
この結晶の育成方法については、特願昭49−3017
9号に詳述されているで参照されたい。Regarding the method of growing this crystal, please refer to the patent application No. 49-3017.
Please refer to the detailed explanation in No. 9.
またその育成および結晶学的な検討は、ジャーナル・オ
ブ・クリスタル・グロウス誌、第24/25巻(197
4年)、445頁、及び同上誌、第26巻(1974年
)、319頁にも詳述されている。Further, its growth and crystallographic studies are described in Journal of Crystal Growth, Volumes 24/25 (197
4), p. 445, and the same journal, Vol. 26 (1974), p. 319.
この学術誌に述べられている、組成範囲が1.5≦X≦
3.1の結晶は室温において、夫々異なった結晶格子定
数をもつ2つの群、すなわち組成範囲1.5□x <
2.1および2.1≦X≦3.1の群に分けられる。The composition range stated in this academic journal is 1.5≦X≦
At room temperature, the crystals in 3.1 have two groups with different crystal lattice constants, that is, a composition range of 1.5□x <
It is divided into the groups 2.1 and 2.1≦X≦3.1.
各々の群に含まれる結晶は、その群内で組成が異なって
も同様な格子定数をもついわゆる固溶体である。The crystals included in each group are so-called solid solutions that have similar lattice constants even if their compositions differ within the group.
上記の2つの群に属するいずれの結晶も優れた電気光学
特性を示すが、本発明の構成の電気光学光変調には、そ
の光学的な特性から、1.5≦x < 2.1の群に属
する結晶のみが有効である。Although any of the crystals belonging to the above two groups exhibits excellent electro-optic properties, the electro-optic light modulation of the configuration of the present invention requires a crystal of 1.5≦x<2.1 due to its optical properties. Only crystals belonging to the group are valid.
本発明の一実施例を、x=1.9すなわちPb0・1.
9Nb20.を用いた場合について、図面をもって説明
する。In one embodiment of the present invention, x=1.9, that is, Pb0.1.
9Nb20. The case where this is used will be explained with reference to drawings.
第1図において、1は結晶軸a。b、c軸に沿って平行
六面体に成形し研磨されたPb0・1.9Nb20.結
晶である。In FIG. 1, 1 is the crystal axis a. Pb0.1.9Nb20. shaped into a parallelepiped along the b and c axes and polished. It is a crystal.
この結晶の対向する上下2つの3面上に、a軸方向に電
界が印加され、しかも光伝播方向に電界の方向が変化す
るように、光ビーム2の進行方向す軸方向に周期的な間
隔で、上下に対向した電極Iを設け、第1図の如く、変
調信号発生器6の出力を隣り合う電極交互に接続する。An electric field is applied in the a-axis direction on the two opposing three faces of the crystal, and at regular intervals in the a-axis direction in the traveling direction of the light beam 2, so that the direction of the electric field changes in the light propagation direction. Then, vertically opposing electrodes I are provided, and the output of the modulation signal generator 6 is alternately connected to adjacent electrodes as shown in FIG.
P bo HxNb205(1,5≦x<2.1 )結
晶の結晶学的な対称性はC2Vであり、その電気光学定
数テンソルは、
である。The crystallographic symmetry of the P bo HxNb205 (1,5≦x<2.1) crystal is C2V, and its electro-optical constant tensor is.
偏光面をC軸方面に振動する直線偏光の入射光2は、印
加電界が零のときは、その偏光面を保持したまま結晶を
出射する。When the applied electric field is zero, linearly polarized incident light 2 whose polarization plane vibrates in the C-axis direction exits the crystal while maintaining its polarization plane.
検光子5はa軸方向に振動する光電異成分のみを透過す
るように配置しであるから、この時変調光4の強度は零
となる。Since the analyzer 5 is arranged so as to transmit only the photoelectrically different component vibrating in the a-axis direction, the intensity of the modulated light 4 becomes zero at this time.
電界を印加すると入射光2は結晶中を伝播するにつれ、
C軸方向のみの光電成分はa軸方向に振動する成分にそ
のエネルギーが変換される。When an electric field is applied, as the incident light 2 propagates through the crystal,
The energy of the photoelectric component only in the C-axis direction is converted into a component that vibrates in the a-axis direction.
上記の電気光学定数マトリクズ中r51がこれに関与す
る。r51 in the electro-optic constant matrix mentioned above is involved in this.
r51の大小が2つの光電界威分間の結合の大小を支配
する。The magnitude of r51 governs the magnitude of the coupling between the two optical electric fields.
Pb0・1.9Nb205結晶のr5. = 45 X
10−”m/ vであり、L t T a 03結晶
の最大の電気光学定数r33=30 X 10−12m
/vより大きい。r5. of Pb0.1.9Nb205 crystal. = 45
10−” m/v, and the maximum electro-optical constant of L t T a 03 crystal r33 = 30 × 10−12 m
Greater than /v.
上記のように定数が大きくても、光電閉成分間の結合は
、作用長をいくら長くしても1oo%とはならない。Even if the constant is large as described above, the coupling between the photoelectroclosing components will not be 10% no matter how long the action length is.
それはそれぞれに対応する結晶中の速度すなわち伝播定
数が同一でないからである。This is because the velocities in the corresponding crystals, that is, the propagation constants are not the same.
この位相の不整合を解除するためには、伝播定数の不整
台分に等しい格子、すなわち
なる。In order to eliminate this phase mismatch, a lattice equal to the propagation constant mismatch is created.
周期J〜の格子を光伝播方向に形成すればよい。A grating with a period J~ may be formed in the light propagation direction.
この格子は光に対する屈折率の変化を与えればよい。This grating may change the refractive index with respect to light.
つまり第1図に示す如くに電界を印加する電極を間隔穴
の周期で分割し、電界の印加方向を隣合う電極毎に反転
させることによって可能である。That is, this is possible by dividing the electrodes to which the electric field is applied, as shown in FIG. 1, at intervals of the spaced holes, and by reversing the direction of electric field application for each adjacent electrode.
また別なる方法は光の伝播方向に結晶を分割して配列す
るという方法でもよい。Another method may be to divide the crystals and arrange them in the direction of propagation of light.
しかしながらこの場合には各結晶端面での光の反射損が
あるためあまり得策ではない。However, in this case, there is a reflection loss of light at each crystal end face, so it is not a good idea.
第1図に示すような構成の光変調器を、使用光波長63
3nmについて従来の電気光学結晶たとえばL iN
b Oaで構成した場合には、このような効果に関与す
る電気光学定数はr51−r42” 28 X 10−
12rn/ Vとあまり高くなく、また関与する主屈折
率の差neneは8X10−2と大きいために上式から
決定される格子間隔J〜は6μmと短かく、結晶断面内
で均重に印加電界が分布しない。An optical modulator having the configuration shown in FIG.
About 3 nm conventional electro-optic crystals such as LiN
b When configured with Oa, the electro-optic constant involved in such an effect is r51-r42" 28 X 10-
Since it is not very high at 12rn/V and the principal refractive index difference nene involved is large at 8X10-2, the lattice spacing J~ determined from the above equation is as short as 6 μm, and the electric field applied evenly within the crystal cross section is not distributed.
PbO・1.9 Nb2O5の主屈折率の光波長にたい
する分散特性を第2図に示す。FIG. 2 shows the dispersion characteristics of the principal refractive index of PbO.1.9 Nb2O5 with respect to the optical wavelength.
PbO・x N b 205(1,5≦x<2.1)に
属する全ての結晶は第2図に示すと同様の分散時性をも
つ。All crystals belonging to PbO.x N b 205 (1,5≦x<2.1) have the same dispersion time as shown in FIG.
すなわち、特定波長においてna−noとなり一軸性結
晶を示し、他の波長では2軸性結晶である。That is, it becomes na-no at a specific wavelength, indicating a uniaxial crystal, and at other wavelengths, it is a biaxial crystal.
この特定波長の近傍の波長ではnaとn。At wavelengths near this specific wavelength, na and n.
との差が小さい、また結晶の組成比Xの値によってこの
特定波長が変化する。This specific wavelength changes depending on the value of the composition ratio X of the crystal.
第1図の実施例における光変調器の動作に関与する主屈
折率はnaおよびn。The principal refractive indices involved in the operation of the optical modulator in the embodiment of FIG. 1 are na and n.
である。光波長633 nmにたいしてこの差は8X1
0−’である。It is. For a light wavelength of 633 nm, this difference is 8X1
0-'.
これから電極の周期穴は0.8 rnmとなる。このた
め結晶のa軸方向の厚さをたとえば0.3 TLmとし
ても、印加電解ははは一様に厚さ方向に分布して変調に
寄与する。From this, the periodic hole of the electrode is 0.8 rnm. Therefore, even if the thickness of the crystal in the a-axis direction is, for example, 0.3 TLm, the applied electrolyte is uniformly distributed in the thickness direction and contributes to modulation.
b軸方向すなわち光伝播方向の結晶長をll=20my
nとすれば、印加rる電圧は15v程度と低く、充分に
実用性がある。The crystal length in the b-axis direction, that is, the light propagation direction, is ll = 20my.
If n, the applied voltage is as low as about 15V, which is sufficiently practical.
勿論特定波長、例えばPb0・1.9 N b 205
の組成の結晶では600nm、では電極を周期構造にす
る必要はない。Of course, a specific wavelength, for example Pb0.1.9 N b 205
For a crystal with a composition of 600 nm, there is no need for the electrode to have a periodic structure.
また異なる使用波長に対しては上記の電極周期間隔を変
えるか、または−軸性結晶となる特定波長の異なる、別
の組成比の結晶を用いればよい。In addition, for different wavelengths to be used, the above-mentioned periodic interval of the electrodes may be changed, or a crystal having a different composition ratio and having a different specific wavelength, which is a -axial crystal, may be used.
尚ここで組成比Xを1.5≦x < 2.1と限定した
のは、2.1くx<3.1の結晶はnaとnbとの差が
小さいけれども、上記の動作に関係する電気光学定数r
61又はr6□が存在しないからである。The reason for limiting the composition ratio electro-optic constant r
This is because 61 or r6□ does not exist.
またx<1.5では前に例示した結晶の育成方法では高
い品質の結晶を容易に得ることができないためである。This is also because when x<1.5, high quality crystals cannot be easily obtained using the crystal growth method exemplified above.
以上述べたように、本発明によれば高性能で安定な光変
調器が得られる。As described above, according to the present invention, a high-performance and stable optical modulator can be obtained.
第1図は本発明の一実施例の原理構成図で、1は変調媒
体、2は入射光ビーム、3は出射光ビーム、5は検光子
、6は変調信号発生器、7は電界印加用電極である。
第2図は本実施例に用いるpbo・1.9 Nb、、
05結晶の光波長に対する屈折率の分散特性を示す図で
ある。FIG. 1 is a principle block diagram of an embodiment of the present invention, in which 1 is a modulation medium, 2 is an incident light beam, 3 is an output light beam, 5 is an analyzer, 6 is a modulation signal generator, and 7 is for applying an electric field. It is an electrode. Figure 2 shows pbo・1.9 Nb used in this example.
FIG. 2 is a diagram showing the dispersion characteristics of refractive index with respect to optical wavelength of 05 crystal.
Claims (1)
≦X≦2.1、Xはモル比)と表わせる単結晶を用い、
該結晶のb軸方向に光ビームを透過し、a軸に垂直な対
向する2面に前記光ビーム透過方向に沿って南朝的に配
置せられた電極を設けたことを特徴とする光変調器。1 PbO-XNb2O, (1,5
≦X≦2.1, X is the molar ratio) using a single crystal,
An optical modulator that transmits a light beam in the b-axis direction of the crystal, and has electrodes arranged in a southern pattern along the light beam transmission direction on two opposing surfaces perpendicular to the a-axis. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50155271A JPS5845006B2 (en) | 1975-12-25 | 1975-12-25 | light modulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50155271A JPS5845006B2 (en) | 1975-12-25 | 1975-12-25 | light modulator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5278457A JPS5278457A (en) | 1977-07-01 |
| JPS5845006B2 true JPS5845006B2 (en) | 1983-10-06 |
Family
ID=15602245
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50155271A Expired JPS5845006B2 (en) | 1975-12-25 | 1975-12-25 | light modulator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5845006B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4311963C2 (en) * | 1993-04-10 | 1996-10-24 | Endress Hauser Gmbh Co | Level measuring device |
-
1975
- 1975-12-25 JP JP50155271A patent/JPS5845006B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5278457A (en) | 1977-07-01 |
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