JPS5846862B2 - Hand tie souchi - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device characterized by conductive leads.

In a conventional semiconductor device in which a conductive lead is directly connected to a semiconductor element electrode part, a first conventional example is a lead strip that is integrated by punching or etching a metal foil in accordance with the semiconductor element electrode part. Those that use
7929 applied) and in the second conventional example, in the insulating frame,
Those using metal strips integrated with the frame (applicable to Japanese Patent Publication No. 4413663 and Special Publication No. 47-3206)
A third conventional example uses a metal lead formed on an insulating film (applied to US Pat. No. 3,440,027).

In these first to third conventional examples (ri), compared to the wire connection method, which electrically connects a semiconductor element and an external lead that have been put into practical use before,
It is not necessary to connect the external lead parts one by one, and there is an advantage that electrical connection with the external lead part can be made by one or two connection operations, but the first embodiment and the second embodiment Therefore, the metal foil strip must be aligned with the position of the semiconductor element electrode, and even if the metal foil strip is formed with accurate alignment, if even a small amount of external stress is applied and deformation occurs, the distortion will occur. Only 11 remain, which has the disadvantage that proper connection cannot be made.

Further, in the first conventional example, since the conductive strip is integrated with metal, there is a drawback that the electrical characteristics of the semiconductor element cannot be inspected after the conductive lead strip is connected.

In the third conventional example, even if external stress is applied, the metal leads are attached to the insulating film, so deformation will not occur. Therefore, the insulator part has drawbacks such as difficulty in obtaining electrical continuity when connecting to multiple leads, and difficulty in aligning the tip of one lead with the element electrode.

The present invention obviates these drawbacks.

Hereinafter, the present invention will be explained in more detail with reference to the drawings in comparison with a conventional example.

FIG. 1 is a plan view of an example of a first conventional semiconductor device.

FIG. 1 shows an aluminum foil having a thickness of about 50 microns, and numeral 2 is a lead strip placed in the opening 5 of the aluminum foil 1 and aligned with the electrode portion 4 of the semiconductor element 3.

Normally, the size of the semiconductor element 3 is a quadrilateral with a side of 1 mm to several mm, so the opening 5 of the aluminum foil 1 is.

The size is about 10 mm to 20 mm in diameter.

Therefore, the length of the lead strip 2 is about 5 mm to 10 mm.

On the other hand, the size of the electrode section 4 of the semiconductor element 3 is 100 mm on one side.
It is a quadrilateral with a diameter of about μ~150μ, and the distance between adjacent electrodes is 1
It is about 00μ to 200μ.

This is done in order to take full advantage of the characteristics of ultra-miniature circuits of semiconductor devices.

Therefore, the dimensional accuracy of the lead strip 2 must be extremely good.

In order to improve the dimensional accuracy of the lead strip, the thinner the metal foil used, the better.However, if the metal foil is too thin, the strength of the lead strip 2 will not be obtained.

For this reason, the maximum thickness of the metal foil is approximately 35 μm, but with such a thickness, the lead strip 2 will bend against the impact applied during the processing stage of the lead strip. It has the drawback that it is difficult to obtain leads that are of good quality because they tend to be misaligned or misaligned.

On the other hand, FIG. 2 shows a plan view of a second conventional semiconductor device in which a polyimide film layer with a thickness of about 100 μm is provided on the parts other than the lead strips in order to reinforce the strength of the metal foil.

7 is 10 reinforcing the metal lead strip 6 with a thickness of several tens of microns.
It is a polyimide thin film frame with a thickness of approximately 0μ.

This polyimide frame 7 is an extremely strong insulator, and a copper lead strip about 35 microns thick is provided in the opening 5 of the frame 7.

The manufacturing method of this lead strip includes punching, etc., to form the opening 5.
There is a method in which a 35 μm thick copper foil is heat-pressed onto a polyimide frame 7 with an adhesive such as polyamide, and then subjected to photoresist treatment and etching treatment.

Since the glued strip 2 in the opening 5 is extremely weak as in the first conventional example, misalignment due to bending during the manufacturing process can be avoided, and the semiconductor element 3 can be There is a drawback that the electrode portion 4 is deviated from its position.

However, since the outer frame 7 is strong, there is little problem of deformation of the outer frame.

FIG. 3 shows a cross-sectional view of a third conventional semiconductor device.

The method of forming lead portions 6 corresponding to the electrodes 4 of the semiconductor element 3 on the insulating film 7 is to thermally press a copper foil several tens of microns thick onto a polyester film approximately 100 microns thick, and then subject it to resist treatment and etching. It is formed according to the treatment.

In this conventional example, the lead part 6 is entirely supported by the insulator 7, so there is no problem in terms of strength. It has the disadvantage that conduction can be obtained only on one side, which is inconvenient when connecting to a lead for external circuit connection.

In FIG. 4, a polyimide film having a thickness of about 100 μm is photoresist-treated in the shape of a solid line, and a polyimide frame with a strip 8 is formed using an etching solution such as hydrazine, and the strip 8 is a semiconductor element. It is formed so as to correspond to the electrode section 4 of No. 3, and is provided with a conductive layer on one surface (the back surface in FIG. 4) in order to obtain electrical continuity.

FIG. 5 is a sectional view of the semiconductor device of FIG. 4.

The conductive strip portion 8 is provided with a metal foil or conductive paste layer with a thickness of several microns to several tens of microns, and is integrated with the strong polyimide frame 7 and the strip portion 8.
There are no problems with positional deviation due to bending, etc.

Moreover, since the conductive strip portions 8 correspond to the element electrodes and the element electrodes can be seen through, their alignment can be facilitated.

Embodiments of the present invention are shown in FIGS. 6 to 12, respectively.

FIG. 6 is a plan view of an embodiment characterized in that there is a constant spacing holding section 9 made only of polyimide film, which is provided in order to achieve even higher positional accuracy than the example shown in FIG. 4.

The constant spacing holding portions 9 can be easily formed by photoresist processing as in FIG. 4.

Alternatively, it can be formed by thermally press-bonding another insulating material such as a polyester film to the polyimide frame 7 with varying thickness.

The conductive layer can be easily formed by using the same method as in the embodiment shown in FIG.

7 is a sectional view of the embodiment shown in FIG. 6, and FIG. 8 is a plan view of the semiconductor device in which the strip portion 8 is cut to the size of the opening portion 5 shown in FIG. 6. be.

FIG. 9 shows a tin-plated Kobar alloy lead 10 with an eighth
2 is a plan view of a semiconductor device in which the elements shown in the figure are bonded together by thermocompression at a bonding portion 11. FIG.

If this condition is established, the part that becomes the external lead will be
Since there is no insulator, there will be no problem when connecting with a part of the connector.

FIG. 10 shows a plan view of an embodiment in which the position of the strip 8 is shown in a different form.

In this case, the fixed interval holder 9 is attached to the frame T by the strong holder 1.
4, and these are also connected through the 6th
It can be constructed in a similar manner to the illustrated embodiment.

In the case of this example, several 1
It is easier to manufacture if the lead strip portion 8 is formed by pasting a copper foil with a thickness of 0 microns.

This is because only the conductive copper foil portion is provided at 12.13.

These points 12 and 13 are intended to avoid connection processing between the semiconductor element electrode portion and the external lead connection portion through the polyimide film, and contribute to obtaining a reliable connection.

However, it is clear that it is also possible to form the conductive parts 8, 12.13 after forming the polyimide frame 7, 8, 9.14.

FIG. 11 is a sectional view of the semiconductor device of FIG. 10.

FIG. 12 shows the semiconductor device of FIG. 10 at point 12,
3 is a cross-sectional view of a semiconductor device sealed with epoxy resin 16 after being connected to external leads 15. FIG.

As described above, in the case of the present invention, there is no problem of positional deviation of the lead strip, which was a problem with the present invention, and the strength is stable, and the part that becomes the external lead has no connection. There are no gender issues.

Furthermore, alignment of the tip of the lead strip and the element electrode is extremely easy.

It is also used in the present invention. The frame body is not limited to polyimide film or polyester film, and it is clear that the frame body other than the strip portions may be made of conductors.

[Brief explanation of the drawing]

FIG. 1 is a plan view of a first conventional example. FIG. 2 is a plan view of a second conventional example. FIG. 3 is a sectional view of a third conventional example. FIG. 4 is a plan view of an example related to the present invention. FIG. 5 is a sectional view of an example related to the present invention. FIG. 6 is a plan view of the first embodiment of the invention. FIG. 7 is a sectional view of the first embodiment of the invention. FIG. 8 is a plan view of the first embodiment of the present invention cut into pieces. FIG. 9 is a plan view when external leads are attached to the first embodiment of the present invention. FIG. 10 is a plan view of a second embodiment of the present invention. FIG. 11 is a sectional view of a second embodiment of the invention. FIG. 12 is a sectional view when the second embodiment of the present invention is implemented. 1... Aluminum foil, 2... Lead strip,
3...Semiconductor element, 6...Lead part,
7... Insulating film, 8... Conductive strip portion, 9... Spacing holding portion, 10... Kobar alloy lead, 16... ·Epoxy resin.

Claims (1)

[Claims] 1 In a semiconductor device in which a metal foil is attached to an insulating film and the metal foil is attached to a semiconductor element electrode part, an opening is provided in the insulating film, and a plurality of insulating films are provided in which a part of the insulating film protrudes into the opening. The metal foil is attached to the plurality of insulating strips, and the plurality of insulating strips are connected to each other by the insulating film near the semiconductor element electrode portion. Semiconductor equipment.