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JPS5847856B2 - Semiconductor wafer separation method - Google Patents
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JPS5847856B2 - Semiconductor wafer separation method - Google Patents

Semiconductor wafer separation method

Info

Publication number
JPS5847856B2
JPS5847856B2 JP55081713A JP8171380A JPS5847856B2 JP S5847856 B2 JPS5847856 B2 JP S5847856B2 JP 55081713 A JP55081713 A JP 55081713A JP 8171380 A JP8171380 A JP 8171380A JP S5847856 B2 JPS5847856 B2 JP S5847856B2
Authority
JP
Japan
Prior art keywords
separation
pellets
wafer
semiconductor wafer
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55081713A
Other languages
Japanese (ja)
Other versions
JPS577137A (en
Inventor
正泰 安部
雅文 宮川
正治 青山
敏夫 米沢
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55081713A priority Critical patent/JPS5847856B2/en
Publication of JPS577137A publication Critical patent/JPS577137A/en
Publication of JPS5847856B2 publication Critical patent/JPS5847856B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00Cutting or separating of wafers, substrates or parts of devices

Landscapes

  • Dicing (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Description

【発明の詳細な説明】 本発明は、半導体ウエハを多数個のペレットに分離する
半導体ウエハの分離力法に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor wafer separation force method for separating a semiconductor wafer into a plurality of pellets.

従来、多数個の半導体素子が形成された半導体ウエハを
各々の素子ごとのペレットに分離するには、予めウエハ
を真空チャックによりテーブルに固定する。
Conventionally, in order to separate a semiconductor wafer on which a large number of semiconductor elements are formed into pellets for each element, the wafer is previously fixed on a table using a vacuum chuck.

次いで、ペレット分離領域に沿ってダイヤモンドカツタ
あるいはダイヤモンドブレード、レーザスクライバなど
で所定深さの分離溝を縦横に穿設し、これを第1図に示
す如く、軟質の部材で形成されたテーブル1上に裏向け
にして載置し、その裏面にゴムマット等の弾性部材2を
設けて弾性部材2の表面にローラ3を転動させることに
よりウエハ4を分離している。
Next, separation grooves of a predetermined depth are bored vertically and horizontally along the pellet separation area using a diamond cutter, a diamond blade, a laser scriber, etc., and these grooves are placed on a table 1 made of a soft material as shown in FIG. The wafer 4 is placed face down on a wafer, an elastic member 2 such as a rubber mat is provided on the back side, and a roller 3 is rolled on the surface of the elastic member 2 to separate the wafer 4.

このように分離溝4aK形成してローラ3でウエハ4を
分離する所謂ウエハクラツキング(ブレーキング)法に
よるもので、装置は簡単であるが、ローラ3で各々のペ
レットに分離する際にペレットの角の剖分か相互に衝突
してペレットに割れや欠けが発生する。
This method is based on the so-called wafer cracking (breaking) method in which the separation grooves 4aK are formed and the wafers 4 are separated by the rollers 3. Although the apparatus is simple, when the separation grooves 4aK are separated into pellets by the rollers 3, the pellets are When the corners of the pellets disintegrate or collide with each other, cracks and chips occur in the pellets.

また、結晶方位依存性かあり厚いウエハ4や大口径のウ
エハ4の分離には適さない欠点がある。
Furthermore, there is a drawback that it is not suitable for separating thick wafers 4 or large-diameter wafers 4 due to dependence on crystal orientation.

本発明は、かかる点に鑑みてなされたもので、操作が簡
単で安価な装置により、ペレットの割れや欠けを防止し
てウエハを所望形状のべレソトに容易に分離することか
できる半導体ウエハの分離方法を見出したものである。
The present invention has been made in view of these points, and is a semiconductor wafer that can easily separate the wafer into pellets of a desired shape while preventing the pellets from cracking or chipping using an easy-to-operate and inexpensive device. They discovered a separation method.

以下、本発明方法について説明する。The method of the present invention will be explained below.

本発明方法は、予め半導体ウエハの表面にペレット分離
領域に沿って所定形状の分離溝を穿設しておき、次いで
、分離溝内に分離液を注入してこF)を固化膨張させる
ことにより、半導体ウエハを多数個のべレソトに分離す
るものである。
In the method of the present invention, a separation groove of a predetermined shape is drilled in advance on the surface of a semiconductor wafer along a pellet separation area, and then a separation liquid is injected into the separation groove to solidify and expand. It separates a semiconductor wafer into a large number of parts.

ここテ、分離溝の形状は、ウエハ当りのべレソトの数を
多くするために切り代となる溝幅の小さいものにする。
Here, the shape of the separation groove is such that the width of the groove serving as the cutting margin is small in order to increase the number of edges per wafer.

通常40〜100μmの溝幅に設定するのか望ましい。It is usually desirable to set the groove width to 40 to 100 μm.

溝深さは分離液の膨張によってペレットか容易に分離す
るようにウェハの肉厚の1/2〜9/10に設定するの
か望ましい。
The depth of the groove is desirably set to 1/2 to 9/10 of the thickness of the wafer so that pellets can be easily separated by expansion of the separating liquid.

分離溝の形或は、ダイヤモンドカツタ、ダイヤモンドブ
レード、レーザスクライバなど如何なる手段を用いても
良い。
Any means such as a separation groove, a diamond cutter, a diamond blade, a laser scriber, etc. may be used.

分離液としては、例えは水のように冷却するだけで容易
に固化してその体積を液体の状態のときよりも膨張させ
るものであれは如何なるものでも良い。
The separating liquid may be any liquid, such as water, that can easily solidify by cooling and expand its volume more than when it is in a liquid state.

次に、本発明の実施例について説明する。Next, examples of the present invention will be described.

第2図に示す如く、2×2鞭の半導体ペレット10か1
000個形成された口径76蔚、厚さ0.3Mの半導体
ウエハ11に予めダイヤモンドブレードによりペレット
分離領域に沿って溝幅か40μm、溝深さが200μm
の分離溝12を穿設したものを10枚用意した。
As shown in Figure 2, 10 or 1 2 x 2 semiconductor pellets
A semiconductor wafer 11 with a diameter of 76 µm and a thickness of 0.3 m was formed with a diamond blade in advance along the pellet separation area with a groove width of 40 μm and a groove depth of 200 μm.
Ten sheets having separation grooves 12 were prepared.

これらの半導体ウエハ11の表面に分離液13として水
を吹付け、毛細管作用により分離溝12内に水を注入し
た。
Water was sprayed as a separation liquid 13 onto the surfaces of these semiconductor wafers 11, and the water was injected into the separation grooves 12 by capillary action.

この後、半導体ウエハ11を約500μmメッシュの網
目か形或された受皿14に載置して第3図に示す如く、
ウエハボート15に収容した。
Thereafter, the semiconductor wafer 11 was placed on a tray 14 having a mesh shape of approximately 500 μm, as shown in FIG.
It was housed in wafer boat 15.

次いで、ウエハボート15を約−200℃に設定された
液体チッ素中に約5分間浸漬した。
Next, the wafer boat 15 was immersed in liquid nitrogen set at about -200°C for about 5 minutes.

浸漬処理後、ウエハボート15から受皿14を引出して
ペレット10の分離状態を観察したところ第4図に示す
如く、全てのペレット10が割れや欠けなどの損傷の無
い状態で完全に分離していることが確認された。
After the immersion process, the tray 14 was pulled out from the wafer boat 15 and the state of separation of the pellets 10 was observed. As shown in FIG. 4, all the pellets 10 were completely separated without any damage such as cracks or chips. This was confirmed.

因に、受皿14からペレット10を採取して半導体ウエ
ハ11の分離前後における受皿14の質量変化を調べて
割れや欠け剖分の質量を測定したところO励gであった
Incidentally, when the pellets 10 were taken from the saucer 14 and the change in mass of the saucer 14 before and after the separation of the semiconductor wafers 11 was examined and the mass of cracks and chips was measured, it was found to be O g.

このように本発明力法によれば、第5図に示す如く分離
溝12内に注入した分離液13(水)か冷却されて固化
する際に、その膨張力Fによって分離溝12の先端部か
ら亀裂を発生して、任意の方向に均一な膨張力Fで半導
体ウエハ11を各々のペレット10に容易に分離するこ
とができる。
As described above, according to the force method of the present invention, as shown in FIG. The semiconductor wafer 11 can be easily separated into pellets 10 by generating cracks from the wafer 10 and applying a uniform expansion force F in any direction.

しかもペレツ1・10に分離する際には外部から全く力
か加わらず、ペレット10間には氷13aか存在してい
るので隣接するペレット10か相互に衝突して割れや欠
けを発生するのを防止することかできる。
Furthermore, when separating the pellets 1 and 10, no external force is applied, and since ice 13a exists between the pellets 10, adjacent pellets 10 do not collide with each other and cause cracks or chips. It can be prevented.

また、水などからなる分離液13によって半導体ウエハ
11の汚染を防止するとともに、ローラ等の外力による
分離操作か不要なので簡単な構造の安価な装置で作業性
を向上させることかできる。
Further, contamination of the semiconductor wafer 11 by the separation liquid 13 made of water or the like is prevented, and since separation operation using an external force such as a roller is not required, work efficiency can be improved with a simple structure and an inexpensive device.

尚、実施例と比較するために同様の半導体ウエハ4の1
0枚にダイヤモンドブレードにより分離溝4aを形成し
て第1図に示すローラ3を用いてペレットの分離を行な
ったところ、ペレットの分離の際に発生した割れや欠け
た剖分の質量は約1 8 47ngであった。
Incidentally, for comparison with the example, a similar semiconductor wafer 4 was prepared.
When separation grooves 4a were formed on the 0 sheets using a diamond blade and the pellets were separated using the roller 3 shown in FIG. It was 847 ng.

また、この比較例のものに比べて実施例では歩留が約5
%向上していることか判った。
Also, compared to this comparative example, the yield in the example was about 5%.
It turns out that there has been a % improvement.

以上説明した如く、本発明に係る半導体ウエハの分離力
法によれば、安価な装置で簡単な操作により、ペレット
の割れや欠けを防止してウエハを所望形状のべレソトに
容易に分離することかできるものである。
As explained above, according to the separation force method for semiconductor wafers according to the present invention, it is possible to easily separate wafers into pellets of a desired shape by using inexpensive equipment and simple operations, while preventing pellets from cracking or chipping. It is something that can be done.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、従来の半導体ウエハの分離力法を示す説明図
、第2図は、半導体ウエハの斜視図、第3図は、本発明
方法にて用いるウエノ\ボートの斜視図、第4図は、本
発明方法によって分離さ力たペレソトの断面図、第5図
は、本発明力法における分離液の作用を示す説明図であ
る。 10・・・・・・ペレット、11・・・・・・半導体ウ
エハ、12・・・・・・分離溝、13・・・・・・分離
液、18・・・・・・亀裂。
Fig. 1 is an explanatory diagram showing the conventional separation force method for semiconductor wafers, Fig. 2 is a perspective view of a semiconductor wafer, Fig. 3 is a perspective view of a ueno boat used in the method of the present invention, Fig. 4 FIG. 5 is a cross-sectional view of a pellet separated by the method of the present invention, and FIG. 5 is an explanatory diagram showing the action of the separation liquid in the method of the present invention. 10...Pellet, 11...Semiconductor wafer, 12...Separation groove, 13...Separation liquid, 18...Crack.

Claims (1)

【特許請求の範囲】[Claims] 1 半導体ウエハの表面に該ウエハを所定形状のペレッ
トに分離するためのペレット分離領域に沿って所定形状
の分離溝を穿設し、次いで、該分離内に分離液を注入し
、然る後、該分離液を固化膨張せしめて前記ウエハを多
数個のペレットに分離せしめることを特徴とする半導体
ウエハの分離方法。
1. A separation groove of a predetermined shape is drilled on the surface of a semiconductor wafer along a pellet separation area for separating the wafer into pellets of a predetermined shape, and then a separation liquid is injected into the separation, and after that, A method for separating semiconductor wafers, comprising solidifying and expanding the separating liquid to separate the wafer into a large number of pellets.
JP55081713A 1980-06-17 1980-06-17 Semiconductor wafer separation method Expired JPS5847856B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55081713A JPS5847856B2 (en) 1980-06-17 1980-06-17 Semiconductor wafer separation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55081713A JPS5847856B2 (en) 1980-06-17 1980-06-17 Semiconductor wafer separation method

Publications (2)

Publication Number Publication Date
JPS577137A JPS577137A (en) 1982-01-14
JPS5847856B2 true JPS5847856B2 (en) 1983-10-25

Family

ID=13754029

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55081713A Expired JPS5847856B2 (en) 1980-06-17 1980-06-17 Semiconductor wafer separation method

Country Status (1)

Country Link
JP (1) JPS5847856B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009130128A (en) * 2007-11-22 2009-06-11 Denso Corp Wafer dividing method

Also Published As

Publication number Publication date
JPS577137A (en) 1982-01-14

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