JPS5951746B2 - Semiconductor wafer separation method - Google Patents
Semiconductor wafer separation methodInfo
- Publication number
- JPS5951746B2 JPS5951746B2 JP55081721A JP8172180A JPS5951746B2 JP S5951746 B2 JPS5951746 B2 JP S5951746B2 JP 55081721 A JP55081721 A JP 55081721A JP 8172180 A JP8172180 A JP 8172180A JP S5951746 B2 JPS5951746 B2 JP S5951746B2
- Authority
- JP
- Japan
- Prior art keywords
- pellets
- semiconductor wafer
- separation
- wafer
- wafers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P54/00—Cutting or separating of wafers, substrates or parts of devices
Landscapes
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Dicing (AREA)
- Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
Description
【発明の詳細な説明】
本発明は、半導体ウェハを多数個のペレットに分離する
半導体ウェハの分離方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor wafer separation method for separating a semiconductor wafer into a large number of pellets.
従来、多数個の半導体素子が形成された半導体ウェハを
各々の素子ごとのペレットに分離するには、予めウェハ
を真空チャックによりテーブルに固定する。次いで、ペ
レット分離領域に沿つてダイヤモンドカッタで所定深さ
の分離溝を縦横に穿設し、これを第1図に示す如<、軟
質の部材で形成されたテーブル1上に裏向けにして載置
し、そ’の裏面にゴムマット等の弾性部材2を設けて弾
性部材2の表面にローラ3を転動させることによりウェ
ハ4を分離している。このようにダイヤモンドカッタで
分離溝4aを形成してローラ3でウェハ4を分離する所
謂ダイ、ヤモンドスクライビング法によるものでは、装
置は簡単であるが、ローラ3で各々のペレットに分離す
る際にペレットの角の部分が相互に衝突してペレットに
割れや欠けが発生する。Conventionally, in order to separate a semiconductor wafer on which a large number of semiconductor elements are formed into pellets for each element, the wafer is previously fixed on a table using a vacuum chuck. Next, separation grooves of a predetermined depth are cut vertically and horizontally along the pellet separation area using a diamond cutter, and the grooves are placed face down on a table 1 made of a soft material, as shown in FIG. The wafer 4 is separated by placing an elastic member 2 such as a rubber mat on the back side of the wafer and rolling a roller 3 on the surface of the elastic member 2. The so-called die and diamond scribing method, in which the separation grooves 4a are formed with a diamond cutter and the wafers 4 are separated by the roller 3, is a simple device, but when the roller 3 separates the wafers into pellets, The corners of the pellets collide with each other, causing cracks and chips in the pellets.
また、結晶方位依存性があり厚いウェハ4や大口径のウ
ェハ4フの分離には適さない欠点がある。また、超薄歯
のダイヤモンドブレードを高速回転させてウェハのペレ
ット分離領域で直接切断せしめる所謂ブレードダイシン
グ法も行われている。Furthermore, it has the disadvantage that it is not suitable for separating thick wafers 4 or large-diameter wafers 4 due to dependence on crystal orientation. A so-called blade dicing method is also used in which a diamond blade with ultra-thin teeth is rotated at high speed to directly cut the wafer in the pellet separation region.
ブレードダイシング法によるものでは結晶方5位に関係
せず、垂直な切断面が得られるが、装置が複雑になり装
置の保守管理に手間を要する問題がある。また、レーザ
光でペレット分離領域を溶融、蒸発させて分離するレー
ザスクライビング法も実用θ化されている。The blade dicing method allows a vertical cut surface to be obtained regardless of the 5th crystal orientation, but there is a problem in that the equipment is complicated and maintenance of the equipment is time-consuming. In addition, a laser scribing method in which the pellet separation region is melted and evaporated using a laser beam to separate the pellets has also been put into practical use.
しかしながら、レーザによるものでは切断速度が速く、
操作も簡単であるが、装置が極め高価な点に問題がある
。本発明は、かかる点に鑑みてなされたもので簡単な操
作でペレットの割れや欠けを防止して半導5体ウェハを
所望形状のペレットに容易に分離することができる半導
体ウェハの分離方法を見出したものである。However, cutting speed with laser is fast;
Although it is easy to operate, the problem is that the equipment is extremely expensive. The present invention has been made in view of the above problems, and provides a method for separating semiconductor wafers that can easily separate five-piece semiconductor wafers into pellets of a desired shape while preventing cracking or chipping of the pellets with simple operations. This is what I found.
以下、本発明方法について説明する。The method of the present invention will be explained below.
本発明方法は、予め半導体ウエハの表面にペレツト分離
領域に沿つて所定形状の分離溝を穿設し、次いで、この
半導体ウエハを微細な吸着孔を穿設した吸着板に固着し
、然る後、分離溝内に所定圧の流体を吹付けて半導体ウ
エハを多数個のペレツトに分離するものである。In the method of the present invention, separation grooves of a predetermined shape are drilled in advance on the surface of a semiconductor wafer along the pellet separation area, and then this semiconductor wafer is fixed to a suction plate with fine suction holes. In this method, a semiconductor wafer is separated into a large number of pellets by spraying fluid at a predetermined pressure into the separation groove.
ここで、分離溝の形状は、ウエハ当りのペレツトの数を
多くするために切り代となる溝幅の小さいものとする。Here, the shape of the separation groove is such that the width of the groove serving as a cutting margin is small in order to increase the number of pellets per wafer.
通常、溝幅は、40〜100μの大きさに設定するのが
望ましい。溝深さは、流体の吹付けによつて分離溝から
速やかに亀裂が発生して半導体ウエハを所定形状のペレ
ツトに分離するようにウエハの肉厚のl/2〜9/10
の大きさに設定するのが望ましい。分離溝の形成手段は
、ダイヤモンドカツタ等のように簡単な操作でウエハに
所定の分離溝を形成することができるものであれば如何
なるものでも良い。Usually, it is desirable to set the groove width to a size of 40 to 100 microns. The depth of the groove is set to 1/2 to 9/10 of the wall thickness of the wafer so that cracks are generated quickly from the separation groove by the spraying of the fluid and the semiconductor wafer is separated into pellets of a predetermined shape.
It is desirable to set the size to . The separation groove forming means may be of any type, such as a diamond cutter, as long as it can form a predetermined separation groove on the wafer with a simple operation.
分離溝に吹付ける流体としては、半導体ウエハ一に形成
された素子を汚染しないものであれば良く、チツ素ガス
等の不活性ガス或は空気等を使用するのが望ましい。The fluid to be sprayed into the separation grooves may be any fluid as long as it does not contaminate the elements formed on the semiconductor wafer, and it is preferable to use an inert gas such as nitrogen gas or air.
流体の分離溝への吹付け方は、例えばノズル径が約10
0μの噴射ノズルを用いて前述の分離溝内2に5 〜3
0気圧の流体が吹付けられるようにするのが望ましい。The method of spraying the fluid into the separation groove is, for example, using a nozzle with a diameter of about 10 mm.
Using a 0μ injection nozzle, inject 5 to 3
It is desirable to spray a fluid at zero pressure.
吸着板は、多数個の吸着孔を穿設した基体に真空ポンプ
等の吸引装置の1端部を接続して半導体ウエハを固定す
るとともに、流体の吹付けによつ・て分離したペレツト
が飛散するのを防止するものである。The suction plate fixes the semiconductor wafer by connecting one end of a suction device such as a vacuum pump to a base with a large number of suction holes, and also uses fluid to spray the wafer to scatter separated pellets. This is to prevent
吸着孔の大きさは半導体ペレツトの大きさに応じて10
〜100μの大きさの範囲で適宜設定するのが望ましい
。また、吸引装置による吸着力は0.5〜1kg/Cm
2の範囲で適宜設定するのが望ましSい。The size of the suction hole is 10% depending on the size of the semiconductor pellet.
It is desirable to set the size appropriately within the range of ~100μ. In addition, the suction force by the suction device is 0.5 to 1 kg/Cm.
It is desirable to set it appropriately within the range of 2.
次に本発明の実施例について説明する。Next, examples of the present invention will be described.
第2図に示す如く、2×2mmの半導体ペレツト10が
約1000個形成された口径76mm、厚さ0.3mm
の半導体ウエハ11に予めダイヤモンドブレード?によ
りペレツト分離領域に沿つて溝幅が40μm)溝深さが
200μmの分離溝12を穿設した。As shown in Fig. 2, approximately 1000 semiconductor pellets 10 of 2 x 2 mm are formed, the diameter is 76 mm, and the thickness is 0.3 mm.
diamond blade in advance on the semiconductor wafer 11? A separation groove 12 having a groove width of 40 μm and a groove depth of 200 μm was bored along the pellet separation region.
次いで、この半導体ウエハ11を第3図に示す如く、多
数個の吸着孔13を穿設した基体14に真空ポンプ(図
示せず)の1端部を接続した吸着板15の表面に固着し
た。次に、ノズル径が100μの噴射ノズル16の先端
部を半導体ウエハ11の分離溝12の直上に位置付けて
チツ素ガスを約10kg/Cm・の圧力で分離溝12内
に吹付けるとともに、分離溝12に沿つて噴射ノズル1
6移動した。流体の吹付け後吸着板15の表面には、全
てのペレツト10が割れや欠けなどの損傷の無い状態で
完全に分離していることが確認された。因に、吸着板1
5からペレツト10を採取して半導体ウエハ11の分離
前後における吸着板15の質量変化を調べて割れや欠け
部分の質量を測定したところ0mmgであつた。このよ
うに本発明方法によれば、分離溝12内に所定圧力の流
体を吹付けることにより、分離溝12の先端部から亀裂
を発生せしめて半導体ウエハ11を容易に所定形状のペ
レツト10に分離することができる。Next, as shown in FIG. 3, this semiconductor wafer 11 was fixed to the surface of a suction plate 15, which had a substrate 14 having a plurality of suction holes 13 and one end of a vacuum pump (not shown) connected thereto. Next, the tip of the injection nozzle 16 with a nozzle diameter of 100μ is positioned directly above the separation groove 12 of the semiconductor wafer 11, and nitrogen gas is sprayed into the separation groove 12 at a pressure of about 10 kg/Cm. Injection nozzle 1 along 12
Moved 6. After spraying the fluid, it was confirmed that all the pellets 10 were completely separated on the surface of the suction plate 15 without any damage such as cracks or chips. Incidentally, suction plate 1
The pellets 10 were taken from the pellets 10 and 10 were examined for changes in the mass of the suction plate 15 before and after the separation of the semiconductor wafers 11, and the mass of cracks and chipped portions was measured and found to be 0 mmg. As described above, according to the method of the present invention, by spraying fluid at a predetermined pressure into the separation groove 12, cracks are generated from the tip of the separation groove 12, and the semiconductor wafer 11 is easily separated into pellets 10 of a predetermined shape. can do.
しかも、半導体ウエハ11は吸着板15に所定の吸着力
で吸着されているのでペレツト10に分離する際に、隣
接するペレツト10が相互に衝突するのを防止すること
ができる。尚、実施例と比較するために第1図に示す如
く、実施例と同様の半導体ウエハ4にダイヤモンドブレ
ードにより分離溝4aを形成してローラ3を用いてペレ
ツトの分離を行つたところ、ペレツトの分離の際に発生
した割れや欠けた部分の質量は約18.4mmgであつ
た。また、この比較例のものに比べて実施例のものでは
歩留が約5%向上していることが判つた。以上説明した
如く、本発明に係る半導体ウエハの分離方法によれば、
簡単な操作によつて半導体ウエハをペレツトの割れや欠
けを防止して所望形状のペレツトに容易に分離すること
ができるものである。Furthermore, since the semiconductor wafer 11 is attracted to the attraction plate 15 with a predetermined attraction force, it is possible to prevent adjacent pellets 10 from colliding with each other when separating into pellets 10. For comparison with the example, as shown in FIG. 1, separation grooves 4a were formed using a diamond blade on a semiconductor wafer 4 similar to that of the example, and pellets were separated using the roller 3. The mass of cracks and chipped parts that occurred during separation was approximately 18.4 mmg. It was also found that the yield of the example was improved by about 5% compared to that of this comparative example. As explained above, according to the semiconductor wafer separation method according to the present invention,
By a simple operation, a semiconductor wafer can be easily separated into pellets of a desired shape while preventing the pellets from cracking or chipping.
第1図は、従来の半導体ウエハの分離方法を示す説明図
、第2図は、半導体ウエハの斜視図、第3図は、本発明
方法により半導体ウエハを所望形状のペレツトに分離し
ている状態を示す説明図である。
10・・・・・・ペレツト、11・・・・・・半導体ウ
エハ、12・・・・・・分離溝、15・・・・・・吸着
板。FIG. 1 is an explanatory diagram showing a conventional method for separating semiconductor wafers, FIG. 2 is a perspective view of a semiconductor wafer, and FIG. 3 is a state in which a semiconductor wafer is separated into pellets of a desired shape by the method of the present invention. FIG. 10... Pellet, 11... Semiconductor wafer, 12... Separation groove, 15... Adsorption plate.
Claims (1)
トに分離するためのペレット分離領域に沿つて所定形状
の分離溝を穿設し、次いで、該ウェハを微細な吸着孔を
穿設した吸着板に固着し、然る後、前記分離溝に所定圧
の流体を吹付けて前記ウェハを多数個のペレットに分離
せしめることを特徴とする半導体ウェハの分離方法。1 Separation grooves of a predetermined shape are drilled on the surface of a semiconductor wafer along a pellet separation area for separating the wafer into pellets of a predetermined shape, and then the wafer is placed on a suction plate with fine suction holes. A method for separating semiconductor wafers, comprising: fixing the wafers, and then spraying fluid at a predetermined pressure into the separation grooves to separate the wafers into a large number of pellets.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55081721A JPS5951746B2 (en) | 1980-06-17 | 1980-06-17 | Semiconductor wafer separation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55081721A JPS5951746B2 (en) | 1980-06-17 | 1980-06-17 | Semiconductor wafer separation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS577138A JPS577138A (en) | 1982-01-14 |
| JPS5951746B2 true JPS5951746B2 (en) | 1984-12-15 |
Family
ID=13754273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55081721A Expired JPS5951746B2 (en) | 1980-06-17 | 1980-06-17 | Semiconductor wafer separation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5951746B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01176045U (en) * | 1988-05-26 | 1989-12-14 | ||
| JPH047443U (en) * | 1990-04-28 | 1992-01-23 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102152408B (en) * | 2010-12-13 | 2013-12-25 | 深圳顺络电子股份有限公司 | Mold, device and method for punching chip component ceramic diaphragm |
| CN109968552B (en) * | 2019-03-26 | 2021-09-17 | 紫光宏茂微电子(上海)有限公司 | Integrated wafer cutting knife and wafer cutting method |
-
1980
- 1980-06-17 JP JP55081721A patent/JPS5951746B2/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01176045U (en) * | 1988-05-26 | 1989-12-14 | ||
| JPH047443U (en) * | 1990-04-28 | 1992-01-23 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS577138A (en) | 1982-01-14 |
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