JPS5850028B2 - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS5850028B2 JPS5850028B2 JP57088459A JP8845982A JPS5850028B2 JP S5850028 B2 JPS5850028 B2 JP S5850028B2 JP 57088459 A JP57088459 A JP 57088459A JP 8845982 A JP8845982 A JP 8845982A JP S5850028 B2 JPS5850028 B2 JP S5850028B2
- Authority
- JP
- Japan
- Prior art keywords
- electrodes
- electrode
- lead wire
- semiconductor device
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
- H10W70/40—Leadframes
- H10W70/464—Additional interconnections in combination with leadframes
- H10W70/466—Tape carriers or flat leads
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
Landscapes
- Wire Bonding (AREA)
Description
【発明の詳細な説明】
本発明は半導体装置、特にその電極引出構造に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device, and particularly to an electrode lead-out structure thereof.
従来、半導体装置においては、複数個の電極とこの複数
個の電極に相対する外部引出用導体の接続部とは１対１
の関係で接続されていた。Conventionally, in a semiconductor device, there is a one-to-one relationship between a plurality of electrodes and a connecting portion of an external lead-out conductor facing the plurality of electrodes.
were connected by the relationship.
半導体装置のうち、価格低減の為に、大きさ、電極の配
置等は標準化されて内部の回路を異にするものがあるが
、この場合、内部の回路によっては複数個の電極を必ら
ずしも全て使用せず電気的に未使用となる電極が存在し
ていた。Some semiconductor devices have been standardized in size, electrode placement, etc. and have different internal circuits in order to reduce costs. However, there were some electrodes that were not used and remained electrically unused.
このように使用しない電極が存在すると、素子電極とリ
ード線との接続において、素子の種類によって接続点数
が異なる為、接続条件例えば接続の加熱温度、加熱時間
、加圧力等が異なり、素子の種類によって条件を設定し
なければならず、作業の標準化に欠は歩留が低くなる欠
点や作業が繁雑になり、かつ作業時間の増加ならびにこ
れらによる製造原価の高騰という欠点があった。If there are electrodes that are not used in this way, the number of connection points will differ depending on the type of element when connecting the element electrode and lead wire, so the connection conditions such as heating temperature, heating time, pressure force, etc. will differ, and the type of element Therefore, standardization of the work has the drawbacks of low yield, complicated work, increased working time, and a rise in manufacturing costs due to these.
本発明の目的は、高信頼性で安価な半導体装置を提供す
ることにある。An object of the present invention is to provide a highly reliable and inexpensive semiconductor device.
゛本発明によれば、所定の外部導出導体に一
端が接続されたリード線はその他端が枝分れして半導体
素子の電極の複数個に接続されており、これらの電極に
は半導体素子に構成された回路に対して使用されない電
極が少なくとも１つ含まれていることを特徴とする半導
体装置を得る。According to the present invention, a lead wire whose one end is connected to a predetermined external conductor is branched at the other end and connected to a plurality of electrodes of a semiconductor element, and these electrodes have a lead wire connected to a predetermined external conductor. A semiconductor device is obtained, which includes at least one electrode that is not used for a configured circuit.
以下、図面により本発明の詳細な説明する。Hereinafter, the present invention will be explained in detail with reference to the drawings.
第１図は、従来の半導体装置の平面図である。FIG. 1 is a plan view of a conventional semiconductor device.
素子１上の電極１０１乃至１０４，１０７および１０８
はリード１２１乃至１２４，１２７および１２５により
外部導出導体１０９乃至１１２゜１１５および１１６へ
それぞれ接続されている。Electrodes 101 to 104, 107 and 108 on element 1
are connected to external lead conductors 109 to 112, 115 and 116 by leads 121 to 124, 127 and 125, respectively.
電極１０５，１０６は回路動作上使用しない電極であり
、外部引出導体１１３，１１４には接続されていない。Electrodes 105 and 106 are not used for circuit operation, and are not connected to external lead conductors 113 and 114.
この場合、リードと素子１の電極との接続点が６点とな
る。In this case, there are six connection points between the leads and the electrodes of the element 1.
このように、８個の電極を有するにもかかわらず、内部
の回路により接続点数の差が生じ、接続条件例えば加熱
温度、時間６又は圧力を増減する必要があった。As described above, although there are eight electrodes, there is a difference in the number of connection points due to the internal circuit, and it is necessary to increase or decrease connection conditions such as heating temperature, time, or pressure.
第２図は、本発明の一実施例による半導体装置の平面図
を示している。FIG. 2 shows a plan view of a semiconductor device according to an embodiment of the present invention.
外部引出導体２１５に接続点２１５′で一端が接続され
たリボン状のリード線２２７は適当な所２１９で三つに
枝分れし、各先端は電極２０５．２０６および２０７へ
接続されている。A ribbon-shaped lead wire 227, one end of which is connected to the external conductor 215 at a connection point 215', branches into three at a suitable location 219, and each tip is connected to an electrode 205, 206, and 207.
このように、回路動作上使用しない電極２０５．２０６
も他のいづれかつ電極２０７とともにリード線に接続さ
れている為に、素子２の電極とリード線との接続点数は
常に一定となり（この場合８点）、接続条件は素子の種
類によらず一定に設定できる。In this way, the electrodes 205 and 206 that are not used for circuit operation
is connected to the lead wire along with the other electrodes 207, so the number of connection points between the electrode of element 2 and the lead wire is always constant (8 points in this case), and the connection conditions are constant regardless of the type of element. Can be set to
尚、電極２０２．２０３も適当な所２１８で枝分れした
リード線２２２で導体２１１へ接続されている。Note that the electrodes 202 and 203 are also connected to the conductor 211 by branching lead wires 222 at appropriate locations 218.
これは、内部抵抗２１７の影響を防止するためである。This is to prevent the influence of the internal resistance 217.
すなわち、回路動作上同電位である電極２０２と電極２
０３は、素子内部において抵抗弁２１７による電位降下
を生じているが、外部引出導体２１１の接続点２１１′
に達するまでに適当な所２１８で一本化するよう形成さ
れたリボン状リード線２２２により外部引出導体２１１
と接続されている為に抵抗弁２１７による電位降下は無
祝される。In other words, electrode 202 and electrode 2, which have the same potential for circuit operation,
03, a potential drop occurs inside the element due to the resistance valve 217, but the connection point 211' of the external lead conductor 211
The external lead conductor 211 is connected by a ribbon-shaped lead wire 222 formed so as to be unified at a suitable point 218 before reaching the
Since the resistor valve 217 is connected to the resistor valve 217, the potential drop due to the resistance valve 217 is ignored.
本発明によれば、接続条件を一定に設定できることによ
り接続条件の安定による信頼性の向上、さらには接続作
業の容易さにより作業時間が減少させることができ、よ
り信頼性の高い安価な半導体装置の提供を可能にする。According to the present invention, since the connection conditions can be set constant, reliability can be improved by stabilizing the connection conditions, and furthermore, the work time can be reduced due to the ease of connection work, and a more reliable and inexpensive semiconductor device can be obtained. to enable the provision of
第１図は従来の半導体装置の平面図、第２図は本発明に
よる一実施例を示す平面図である。
１・・・・・・半導体素子、１０１〜１０８，２０１〜
２０８・・・・・・電極、１０９〜１１６，２０７〜２
１６・・・・・・外部導出導体、２１７・・・・・・素
子内部の抵抗弁、２２１．２２２．２２４．２２７ 。
２２８・・・・・・リード、２・・・・・・半導体素子
。FIG. 1 is a plan view of a conventional semiconductor device, and FIG. 2 is a plan view showing an embodiment according to the present invention. 1... Semiconductor element, 101-108, 201-
208... Electrode, 109-116, 207-2
16... External lead-out conductor, 217... Resistance valve inside the element, 221.222.224.227. 228...Lead, 2...Semiconductor element.
Claims (1)
導出導体と、これらを接続するリード線とを有する半導
体装置において、所定の外部導出導体にその一端が接続
されたリード線はその他端が枝分れして前記半導体素子
の電極の複数個に接続されており、これらの電極には前
記半導体素子に構成された回路に対して使用されない電
極が少なくとも１つ含まれていることを特徴とする半導
体装置。1. In a semiconductor device having a semiconductor element having a plurality of electrodes, a plurality of external conductors, and a lead wire connecting these, one end of the lead wire is connected to a predetermined external conductor, and the other end is connected to a predetermined external conductor. The semiconductor element is branched and connected to a plurality of electrodes of the semiconductor element, and these electrodes include at least one electrode that is not used for the circuit configured on the semiconductor element. semiconductor devices.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57088459A JPS5850028B2 (en) | 1982-05-24 | 1982-05-24 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57088459A JPS5850028B2 (en) | 1982-05-24 | 1982-05-24 | semiconductor equipment |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP51082691A Division JPS5823945B2 (en) | 1976-07-12 | 1976-07-12 | semiconductor equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5844759A JPS5844759A (en) | 1983-03-15 |
| JPS5850028B2 true JPS5850028B2 (en) | 1983-11-08 |
Family
ID=13943364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57088459A Expired JPS5850028B2 (en) | 1982-05-24 | 1982-05-24 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5850028B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4736236A (en) * | 1984-03-08 | 1988-04-05 | Olin Corporation | Tape bonding material and structure for electronic circuit fabrication |
| JPH0192400A (en) * | 1987-10-01 | 1989-04-11 | Furukawa Saakitsuto Fuoiru Kk | Insoluble electrode device |
| EP0310401B1 (en) * | 1987-10-01 | 1994-04-20 | Furukawa Circuit Foil Co., Ltd. | Insoluble electrode device |
| CN103579687B (en) | 2012-07-31 | 2019-04-12 | 株式会社杰士汤浅国际 | Battery |
-
1982
- 1982-05-24 JP JP57088459A patent/JPS5850028B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5844759A (en) | 1983-03-15 |
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