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JPS5852034B2 - Partial plating method and device - Google Patents
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JPS5852034B2 - Partial plating method and device - Google Patents

Partial plating method and device

Info

Publication number
JPS5852034B2
JPS5852034B2 JP56134494A JP13449481A JPS5852034B2 JP S5852034 B2 JPS5852034 B2 JP S5852034B2 JP 56134494 A JP56134494 A JP 56134494A JP 13449481 A JP13449481 A JP 13449481A JP S5852034 B2 JPS5852034 B2 JP S5852034B2
Authority
JP
Japan
Prior art keywords
plating
mask
plated
plating solution
outside air
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56134494A
Other languages
Japanese (ja)
Other versions
JPS5837190A (en
Inventor
好一 島村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SONITSUKUSU KK
Original Assignee
SONITSUKUSU KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SONITSUKUSU KK filed Critical SONITSUKUSU KK
Priority to JP56134494A priority Critical patent/JPS5852034B2/en
Publication of JPS5837190A publication Critical patent/JPS5837190A/en
Publication of JPS5852034B2 publication Critical patent/JPS5852034B2/en
Expired legal-status Critical Current

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  • Electroplating Methods And Accessories (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Description

【発明の詳細な説明】 本発明は、被メッキ面に対してメッキ液を噴射し、特定
微小部分のみをメッキする部分メッキであって、被メッ
キ面とメッキ噴射ノズルとの間に生じるメッキ液の淀み
を強制排除し、メッキ電流密度を向上してメッキ効率を
改善するようにした部分メッキ方法及びその装置に関す
る。
Detailed Description of the Invention The present invention is a partial plating method in which a plating solution is sprayed onto a surface to be plated to plate only a specific minute portion, and the plating solution generated between the surface to be plated and a plating injection nozzle is The present invention relates to a partial plating method and an apparatus for the same, which forcibly removes stagnation and improves plating efficiency by increasing plating current density.

通常、集積回路素子のリードフレームや微小型化した電
子部品の接点等に、金や白金等の貴金属を部分メッキす
る場合は、被メッキ面にメッキ液を噴射する手段が一般
的であるが、従来の部分メッキ手段では、メッキ品位や
作業性が悪く、又、メッキ処理費や設備費が嵩むと云う
不都合な問題があった。
Normally, when partially plating precious metals such as gold or platinum onto lead frames of integrated circuit elements or contacts of miniaturized electronic components, the common method is to spray a plating solution onto the surface to be plated. Conventional partial plating methods have disadvantageous problems such as poor plating quality and workability, and increased plating processing and equipment costs.

この問題点を解決するものとして、特願昭54年第10
0772号(特開昭56−102590号)に係る「微
少面積のメッキ方法及びその装置」が提供されている。
As a solution to this problem, the 10th patent application of 1972
No. 0772 (Japanese Unexamined Patent Publication No. 56-102590) provides "a method and apparatus for plating a small area".

この発明は、被メッキ材の微少面積部分をマスキングす
る過程と、外気導入手段及び流体排除手段を有しこのマ
スキング部内を密閉する過程と、このマスキング部内の
密閉空間内にて被メッキ材に対向するノズルを配置する
過程を有し、且つノズル及び被メッキ材をアノード及び
カソードとし、微少面積部分のメッキを行ない且つ余分
なメッキ液を密閉空間内雰囲気と外気導入手段による空
気と共に吸引排除するものである。
The present invention includes a process of masking a minute area of a material to be plated, a process of sealing the inside of this masking part having an outside air introduction means and a fluid removal means, and a process of masking a part of the material to be plated in a sealed space within the masking part. The method includes a process of arranging a nozzle for plating, and uses the nozzle and the material to be plated as an anode and a cathode, plating a minute area, and sucking and removing excess plating solution along with the atmosphere in the closed space and air from the outside air introducing means. It is.

これにより、メッキ処理境界面に於けるハレーションを
防止し、又金属析出速度も安定して高品位のメッキが得
られるようになった。
This prevents halation at the plating interface, stabilizes the metal deposition rate, and provides high-quality plating.

このように高精度のメッキが多量に且つ低置に処理でき
るが、ノズルから噴射されたメッキ液柱がそれと対向す
る被メッキ面に衝突する際に、流体の粒子に作用するベ
クトルは、メッキ液柱の頂部で垂直(+ZZ軸方向のベ
クトルが零となり、被メッキ面(マスク)の内面に沿っ
てその速度のベクトルを変えて流れる。
In this way, high-precision plating can be processed in large quantities and at a low location, but when the plating liquid column sprayed from the nozzle collides with the opposite surface to be plated, the vector that acts on the fluid particles is At the top of the column, the vector in the vertical (+ZZ-axis direction) becomes zero, and it flows along the inner surface of the surface to be plated (mask), changing its velocity vector.

しかし、流体の中でも特定のものは、被メッキ面の1点
で交わりそこからラジアル方向に、被メッキ面に沿って
滑り乍ら下方に流れて行く。
However, certain fluids intersect at one point on the surface to be plated and from there flow downward in the radial direction while sliding along the surface to be plated.

この交点は、淀み点と称するものであり、又、上記流体
の特性曲線は、ラプラス方程式を解くことにより第1図
に図示のようになる。
This point of intersection is called a stagnation point, and the characteristic curve of the fluid becomes as shown in FIG. 1 by solving the Laplace equation.

即ち、メッキ液流の流線りは、被メッキ面Tに対し略平
行に向きを変えることから、ノズルNより噴射したメッ
キ液柱はZ軸方向への運動量が減少する。
That is, since the streamline of the plating liquid flow changes its direction to be approximately parallel to the plated surface T, the momentum of the plating liquid column sprayed from the nozzle N in the Z-axis direction decreases.

つまり、常時−Z軸方向に減少した運動量に等しい力が
発生していて、メッキ液の持つ液圧に対する背圧が生じ
た状態になる。
In other words, a force equal to the momentum decreased in the −Z-axis direction is always generated, and a back pressure is generated against the liquid pressure of the plating solution.

この状態に於いて、X軸方向に流れ去るメッキ済液の排
除が充分でないと、後から噴射されて来たメッキ液がノ
ズルNの先端と被メッキ面Tの間の空間に溜り、更に後
から噴射して来るメッキ液に対する抵抗となり背圧が増
加する。
In this state, if the plating solution flowing away in the X-axis direction is not removed sufficiently, the plating solution sprayed later will accumulate in the space between the tip of the nozzle N and the surface to be plated T, causing further damage later. This creates resistance to the plating solution sprayed from the surface, increasing back pressure.

その結果、噴射メッキ液の流速が低下して被メッキ面T
1即ちカソード面にメッキ液の淀みが発生する。
As a result, the flow rate of the sprayed plating solution decreases and the surface to be plated T
1, that is, stagnation of the plating solution occurs on the cathode surface.

このためメッキ拡散層の厚みが増大化し、メッキ電流が
減少して電流密度が小さくなりメッキ効率が大巾に低下
すると云う不都合な問題があった。
As a result, the thickness of the plating diffusion layer increases, the plating current decreases, the current density becomes low, and the plating efficiency is greatly reduced, which is an inconvenient problem.

本発明は、叙上の問題点に鑑み成されたもので、カソー
ド面に生じるメッキ済液の淀みを強制的に排除し、ノズ
ルから新たに噴射されて来るメッキ液に対する背圧を無
くしてメッキ電流密度を高める目的で威されたものであ
る。
The present invention was developed in view of the above-mentioned problems, and it forcibly removes the stagnation of the plating solution that occurs on the cathode surface, eliminates the back pressure against the plating solution newly sprayed from the nozzle, and performs plating. It was used for the purpose of increasing the current density.

即ち、具体的には、被メッキ面に密閉空間を形成し、そ
の内部でメッキ液を噴射して特定部分のみをメッキした
後メッキ済液を吸引排除する部分メッキに於いて、噴射
メッキ液柱の外周に、その噴射方向と平行で逆向きの気
体を外部から供給して気柱を形成することにより、被メ
ッキ面とメッキ液噴射ノズルの先端間に生じるメッキ液
の淀みを強制排除して、メッキ電流密度を向上するよう
にした部分メッキ方法の提供を第1目的とするものであ
る。
Specifically, in partial plating, a sealed space is formed on the surface to be plated, a plating solution is sprayed inside the space, and after plating only a specific area, the plating solution is suctioned away. By supplying gas from the outside parallel to and opposite to the injection direction to form an air column around the outer circumference of the plating solution, the stagnation of the plating solution that occurs between the surface to be plated and the tip of the plating solution injection nozzle is forcibly removed. The first object of the present invention is to provide a partial plating method that improves plating current density.

又、本発明の他の目的とする処は、メッキ済液の排除効
率を高めると共にノズルによるマスキング機能を損わな
いようにした部分メッキ装置を提供せんとするものであ
って、具体的には、被メッキ面に対峙するマスク本体及
び/又はマスク取付台に、被メッキ面とメッキ液噴射ノ
ズルに対応して透孔を穿設し、且つこの透孔の近傍には
噴射ノズルと平行な外気導入路を形成して成るマスクを
具備した部分メッキ装置の提供にある。
Another object of the present invention is to provide a partial plating device that increases the removal efficiency of the plating solution and does not impair the masking function of the nozzle. , A through hole is formed in the mask body and/or the mask mounting base facing the surface to be plated, corresponding to the surface to be plated and the plating solution injection nozzle, and near the hole, outside air parallel to the injection nozzle is provided. An object of the present invention is to provide a partial plating device equipped with a mask forming an introduction path.

以下、本発明の数実施例について、第2図以下を参照し
乍ら説明する。
Hereinafter, several embodiments of the present invention will be described with reference to FIG. 2 and subsequent figures.

メッキ液を噴射するノズル1は、所定容量のチャンバー
2及びこれと連通ずる排除管3を備えた外套管4の底部
に、ノズル保持具5を介して着脱自在且つ昇降調節自在
に配設しである。
A nozzle 1 for injecting a plating solution is disposed at the bottom of a mantle tube 4 having a chamber 2 of a predetermined capacity and an evacuation tube 3 communicating with the chamber 2 via a nozzle holder 5 so as to be detachable and adjustable in elevation. be.

この外套管4の頂部にはマスク6を着脱自在に配設して
あり、マスク6は、マスク本体7とマスク取付台8で構
成しである。
A mask 6 is detachably disposed at the top of the mantle tube 4, and the mask 6 is composed of a mask body 7 and a mask mounting base 8.

このマスク本体7とマスク取付台8の中心には、ノズル
1と対向し且つその内周面を末広り状のテーパー面とし
た透孔9を垂直軸方向(Z軸方向)に穿設してあり、こ
の透孔9を中心とした同心円線上に、円弧状の外気導入
路10をノズル1と平行方向(Z軸方向)に4本等間隔
で穿設しである。
A through hole 9 is bored in the center of the mask body 7 and the mask mounting base 8 in the vertical axis direction (Z-axis direction), facing the nozzle 1 and having an inner peripheral surface that is a tapered surface. Four arc-shaped outside air introduction passages 10 are bored at equal intervals in a direction parallel to the nozzle 1 (Z-axis direction) on concentric circles centered on the through hole 9.

上記マスク本体7は、セラミック等で形成してあり、透
孔9の形成面と、外気導入路10が形成されている面と
は段差を設けてあって、外気導入路10を外気と連通又
は図示しない配管に接続可能としである。
The mask body 7 is made of ceramic or the like, and has a step between the surface where the through holes 9 are formed and the surface where the outside air introduction path 10 is formed, so that the outside air introduction path 10 is communicated with the outside air or It can be connected to piping (not shown).

この配管は、必要に応じて加圧気体(空気や不活性ガス
)を上記外気導入路10に供給する時に用いるものであ
る。
This piping is used when supplying pressurized gas (air or inert gas) to the outside air introduction path 10 as required.

又、前記排除管3は、排気ポンプ(図示せず)に連結し
、メッキ処理に際してはこれを駆動してチャンバー2内
を負圧状態にするものである。
Further, the evacuation pipe 3 is connected to an exhaust pump (not shown), and is driven to bring the inside of the chamber 2 into a negative pressure state during plating processing.

尚、マスク本体7と対設する被メッキ面11を直流電源
の(−)極に接続してカソード(イ)側とする一方、ノ
ズル1を(+)極に接続してアノード(4)側とする。
The surface to be plated 11 opposite to the mask body 7 is connected to the (-) pole of the DC power supply to serve as the cathode (A) side, while the nozzle 1 is connected to the (+) pole to serve as the anode (4) side. shall be.

叙上の構成に於いてメッキ処理をする場合は、先ず排気
ポンプを駆動することによりチャンバー2乃至排除管3
内を負圧状態と成し、次いでアノード(4)とカソード
■間に直流電圧を印加する。
When performing plating in the configuration described above, first, the exhaust pump is driven to drain the chamber 2 to the exhaust pipe 3.
A negative pressure condition is established inside the tube, and then a DC voltage is applied between the anode (4) and the cathode (2).

一方、ノズル1からは加圧メッキ液を被メッキ面11に
向って噴射せしめ、必要に応じて配管からは加圧気体を
供給する。
On the other hand, pressurized plating liquid is injected from the nozzle 1 toward the surface to be plated 11, and pressurized gas is supplied from the piping as necessary.

ノズル1から噴射したメッキ液は、ノズル1の内径と略
近似の外径の柱状となりマスク6を介して被メッキ面1
1に衝突し、そこに金属を析出して透孔9に対応した部
分メッキが行なわれる。
The plating liquid sprayed from the nozzle 1 forms a column with an outer diameter approximately similar to the inner diameter of the nozzle 1 and is applied to the surface to be plated 1 through the mask 6.
1, metal is deposited there, and partial plating corresponding to the through hole 9 is performed.

一方、排除管3乃至チャンバー2内が負圧であるため、
メッキ済液や余分なメッキ液は気液混合状態で外部へ速
やかに強制排除される。
On the other hand, since the inside of the exclusion pipe 3 and chamber 2 is under negative pressure,
The plating solution and excess plating solution are quickly forcibly removed to the outside in a gas-liquid mixture.

而かも被メッキ面11(固相)とメッキ液(液相)との
境界には、常に新鮮な液相があるため、この境界に生じ
易い拡散層の厚みが極めて薄くなってイオン濃度が均一
となり、メッキ液固有の電気的比抵抗のみで形成された
電解液柱を形成したことと同じになって、電流値が定常
安定化するから金属の析出速度も安定し高品位のメッキ
が得られる。
Moreover, since there is always a fresh liquid phase at the boundary between the surface to be plated 11 (solid phase) and the plating solution (liquid phase), the thickness of the diffusion layer that tends to occur at this boundary becomes extremely thin and the ion concentration is uniform. This is the same as forming an electrolyte column formed only by the electrical resistivity specific to the plating solution, and the current value becomes steady and stable, so the metal deposition rate is also stabilized and high-quality plating can be obtained. .

然るに、メッキ液は、かなり粘性の高い液体であるから
、マスク6の内表面乃至被メッキ面11の表面を流れる
場合、その粘性抵抗によりその流速は著しく低下してく
る。
However, since the plating solution is a fairly highly viscous liquid, when it flows over the inner surface of the mask 6 or the surface of the surface to be plated 11, its flow rate is significantly reduced due to its viscous resistance.

従って、被メッキ面11とノズル1を対峙させただけで
は、両者の空間内には前記したようにメッキ済液の淀み
が生じて後続のメッキ液に対して背圧となり、結果的に
はメッキ電流密度が低下するため、連続メッキ処理の場
合は次第にメッキ機能が低下してしまう。
Therefore, if the surface to be plated 11 and the nozzle 1 are simply opposed to each other, the plated solution will stagnate in the space between them as described above, creating back pressure against the subsequent plating solution, and as a result, plating Since the current density decreases, the plating function gradually deteriorates in the case of continuous plating processing.

而して、本発明に於いては、外気導入路10から外気又
は加圧気体が差圧によりマスク6乃至チャンバー2内に
流入し、又、それがメッキ液柱と平行で且つ逆向き(即
ち、−2軸方向)に作用するため、メッキ液柱の周囲に
柱状気流が形成される。
Therefore, in the present invention, the outside air or pressurized gas flows from the outside air introduction path 10 into the mask 6 or the chamber 2 due to the pressure difference, and also flows in parallel and in the opposite direction (i.e., in the opposite direction) to the plating liquid column. , -2 axial direction), a columnar airflow is formed around the plating liquid column.

この結果、メッキ液柱の側圧が小さくなり、X軸方向に
拡散するメッキ液がベルヌーイの法則で理論づけられる
ようにこの柱状気流の方に吸い込まれたり、或いは直接
柱状気流に触れて排除管3の方に強制移送され排除され
る。
As a result, the lateral pressure of the plating liquid column decreases, and the plating liquid that diffuses in the X-axis direction is either sucked into this columnar airflow, as theorized by Bernoulli's law, or directly touches the columnar airflow and flows into the removal pipe 3. They were forcibly transferred to and eliminated.

即ち、対向する空気流と、ノズル1から噴射されたメッ
キ液の間に生じる摩擦により、強制的に、噴射されて来
たメッキ液の淀みを排除する。
That is, the friction generated between the opposing air streams and the plating solution injected from the nozzle 1 forcibly eliminates the stagnation of the injected plating solution.

従って、粘性の高いメッキ液が、カソードに面で淀み状
態となっていても、外気導入路10からの気体又は加圧
気体により強制的に排除されるため、背圧を生じる惧れ
は全くなくなり、連続的なメッキ処理を行なっても常時
メッキ電流密度は高い水準で維持され高品位のメッキ処
理が多量に行なえる。
Therefore, even if the highly viscous plating solution stagnates on the surface of the cathode, it is forcibly removed by the gas or pressurized gas from the outside air introduction path 10, so there is no risk of creating back pressure. Even when plating is performed continuously, the plating current density is always maintained at a high level, and a large amount of high-quality plating can be performed.

次に第2実施例について第4図以下を参照し乍ら説明す
る。
Next, a second embodiment will be described with reference to FIG. 4 and subsequent figures.

本実施例は、マルチ方式に係るもので、被メッキ面が多
数連設している状態の時、これを一度に部分メッキ処理
をする態様である。
This embodiment relates to a multi-system, in which when a large number of surfaces to be plated are arranged in succession, partial plating is performed on them at once.

マスク21は、セラミック製の長方形薄板状のマスク本
体22に、メッキ対象に対応した透孔23を所定数連設
してあって、各透孔23共その断面形状は漏斗状に形成
してあり、且つ各々の透孔23に対応して所定距離の処
に等間隔で円筒状の外気導入路24を多数穿設しである
The mask 21 has a rectangular thin plate-shaped mask body 22 made of ceramic, and a predetermined number of through holes 23 corresponding to the objects to be plated are arranged in series, and each through hole 23 has a funnel-shaped cross section. , and a large number of cylindrical outside air introduction passages 24 are bored at equal intervals at a predetermined distance corresponding to each through hole 23.

この外気導入路24の形状は、平面円形に限定されるも
のではなく、長円や楕円形成いは長いスjット状でも良
く、数も任意であって、全部の透孔23に対応できれば
良い。
The shape of the outside air introduction passage 24 is not limited to a circular plane, but may be an ellipse, an ellipse, or a long slit, and the number may be arbitrary, as long as it can accommodate all the through holes 23. good.

本実施例ではマスク本体22のみに透孔23及び外気導
入路24を形威しであるが、外気導入路24は、マスク
本体22を保持する台(図示せず)に穿設しても良いこ
とは勿論である。
In this embodiment, the through hole 23 and the outside air introduction path 24 are provided only in the mask body 22, but the outside air introduction path 24 may be formed in a stand (not shown) that holds the mask body 22. Of course.

上記構成に係るマスク21の作用効果は、前記実施例と
同一であるため、その説明は省略する。
The effects of the mask 21 having the above configuration are the same as those of the embodiment described above, and therefore the explanation thereof will be omitted.

尚、前記及び上記実施例共、外気導入路10゜24の形
態や数、配置間隔等はメッキ対象や種類に応じて適宜決
定するものであって、例えば直線や曲線状のスリットと
して透孔9,23に対応させてもその効果は変らない。
In both the above and the embodiments described above, the shape, number, arrangement interval, etc. of the outside air introduction passages 10°24 are determined as appropriate depending on the object to be plated and the type. , 23, the effect remains the same.

又、透孔の内周面も、テーパー状に限定されず例えば第
6図に図示の如く内周面が半球面状の透孔23′として
、カソードにとアノードA間の容量を大きくすると共に
メッキ済後のメッキ液が流出する際その流線りに無理の
ない状態とし、その半球面内に外気導入路24′を垂直
方向に臨ませても良い。
Furthermore, the inner circumferential surface of the through hole is not limited to a tapered shape, but may be formed into a through hole 23' whose inner circumferential surface is hemispherical, as shown in FIG. When the plating solution flows out after plating, it may be streamlined so that the outside air introduction passage 24' faces vertically within the hemispherical surface.

叙上の如く本発明によれば、マスクに穿設された透孔即
ちメッキ液の淀み点の近傍に、ノズルから噴射されるメ
ッキ液柱と平行な方向に、任意形態及び任意数の外気導
入路を形成し、そこから流入せしめた加圧気体によりマ
スク内に於いてX軸方向に流れるメッキ液を、X軸面か
ら強制的に弓き剥がすことにより、メッキ済液を強制的
に排除し背圧の発生を防止するようにしであるから、電
流密度が著しく高くなり、特に連続的なメッキ処理に際
してもメッキ効率が低下しないので高品位なメッキ処理
が成し得ると云う著効を奏するものである。
As described above, according to the present invention, outside air can be introduced in any form and in any number into the through holes drilled in the mask, that is, near the stagnation point of the plating liquid, in a direction parallel to the plating liquid column sprayed from the nozzle. The plating solution flowing in the X-axis direction inside the mask is forcibly peeled off from the X-axis surface by forming a channel and the pressurized gas flowing from the channel causes the plating solution to be forcibly removed. Since it is designed to prevent the generation of back pressure, the current density is significantly high, and the plating efficiency does not decrease even during continuous plating processing, so it is highly effective in achieving high-quality plating processing. It is.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は在来の部分メッキ手段に於いて被メッキ面に衝
突した後のメーツキ液の流れを示す説明図、第2図以下
は本発明の実施例に係るものであり、第2図は単一の透
孔が穿設されたマスクの平面図、第3図は同上I−I線
縦線面断面図4図はマルチ方式のマスクの平面図、第5
図は同上■−■線縦線面断面図6図は他の実施例に係る
マスクの縦断面図である。 1・・・・・・ノズル、3・・・・・・排除管、4・・
・・・・外套管、6.21.21’・・・・・・マスク
、7,22,22’・・・・・・マスク本体、8・・・
・・・マスク取付台、9,23゜23′・・・・・・透
孔、10,24,24’・・・・・・外気導入路、11
・・・・・・被メッキ面。
Fig. 1 is an explanatory diagram showing the flow of the matting liquid after it collides with the surface to be plated in the conventional partial plating means, and Fig. 2 and the following are related to embodiments of the present invention. FIG. 3 is a plan view of a mask with a single through hole; FIG. 3 is a cross-sectional view taken along the vertical line I-I;
FIG. 6 is a longitudinal sectional view of a mask according to another embodiment. 1...nozzle, 3...exclusion pipe, 4...
・・・・Outer tube, 6.21.21′・・・・Mask, 7,22,22′・・・・Mask body, 8…
...Mask mounting base, 9,23゜23'...Through hole, 10,24,24'...Outside air introduction path, 11
・・・・・・Surface to be plated.

Claims (1)

【特許請求の範囲】 1 被メッキ面にマスクを用いて密閉空間を形成し、そ
の内部でメッキ液を噴射して特定部分のみをメッキする
部分メッキに於いて、噴射メッキ液柱の外周に、その噴
射方向と平行で逆向きの気体を外部から供給して柱状気
流を形成することにより、被メッキ面とメッキ液噴射ノ
ズルの先端間に生じるメッキ液の淀みを強制排除して、
メッキ電流密度を向上するようにしたことを特徴とする
部分メッキ法。 2 被メッキ面に対峙するマスク本体及び/又はマスク
取付台に、被メッキ面とメッキ液噴射ノズルに対向して
透孔を穿設し、且つこの透孔の近傍には噴射ノズルと平
行な外気導入路を形成したマスクと、内部にこのマスク
と対向するメッキ液噴射ノズルを配設し且つ上記マスク
を固着することにより密閉空間を形成する外套管と、該
外套管に連通しその内部を負圧にしメッキ済液を排除す
る排除管とを具備して成る部分メッキ装置。 3 マスクの外気導入路は、単一の透孔を中心としその
同心円線上に任意数穿設したことを特徴とする特許請求
の範囲第2項記載の部分メッキ装置。 4 マスク本体に多数連設した透孔の全部に対向して、
前記外気導入路を任意数並設したことを特徴とする特許
請求の範囲第2項記載の部分メッキ装置。 5 前記外気導入路は、直線乃至曲線の裂は目状に形成
したことを特徴とする特許請求の範囲第2項乃至第4項
のいづれかに記載した部分メッキ装置。
[Claims] 1. In partial plating, in which a mask is used to form a sealed space on the surface to be plated, and a plating solution is sprayed inside the space to plate only a specific area, the outer periphery of the sprayed plating liquid column is By supplying gas from outside parallel to and opposite to the injection direction to form a columnar airflow, the stagnation of the plating solution that occurs between the surface to be plated and the tip of the plating solution injection nozzle is forcibly removed.
A partial plating method characterized by improving plating current density. 2. A through hole is bored in the mask body and/or the mask mounting base facing the surface to be plated, facing the surface to be plated and the plating solution injection nozzle, and near the hole, outside air parallel to the injection nozzle is provided. A mask having an introduction path formed therein, a mantle tube in which a plating liquid spray nozzle facing the mask is disposed, and a sealed space is formed by fixing the mask; A partial plating device comprising a discharge pipe for pressurizing and discharging a plating solution. 3. The partial plating apparatus according to claim 2, wherein an arbitrary number of outside air introduction passages of the mask are formed on concentric circles around a single through hole. 4 Opposing all of the many through holes in the mask body,
3. The partial plating apparatus according to claim 2, wherein an arbitrary number of said outside air introduction passages are arranged in parallel. 5. The partial plating apparatus according to any one of claims 2 to 4, wherein the outside air introduction path is formed in a straight or curved line in the form of a mesh.
JP56134494A 1981-08-26 1981-08-26 Partial plating method and device Expired JPS5852034B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56134494A JPS5852034B2 (en) 1981-08-26 1981-08-26 Partial plating method and device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56134494A JPS5852034B2 (en) 1981-08-26 1981-08-26 Partial plating method and device

Publications (2)

Publication Number Publication Date
JPS5837190A JPS5837190A (en) 1983-03-04
JPS5852034B2 true JPS5852034B2 (en) 1983-11-19

Family

ID=15129627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56134494A Expired JPS5852034B2 (en) 1981-08-26 1981-08-26 Partial plating method and device

Country Status (1)

Country Link
JP (1) JPS5852034B2 (en)

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Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5095414U (en) * 1973-12-31 1975-08-09
JPS5127822A (en) * 1974-09-02 1976-03-09 Inoue Japax Res METSUKISOCHI
DE2551988A1 (en) * 1975-11-17 1977-05-26 Schering Ag PROCESS FOR THE SELECTIVE GALVANIC DEPOSITION OF METALS AND DEVICE FOR CARRYING OUT THE PROCESS
JPS6053759B2 (en) * 1978-08-29 1985-11-27 日本エレクトロプレイテイング・エンジニヤ−ス株式会社 Partial plating method and device
JPS56102590A (en) * 1979-08-09 1981-08-17 Koichi Shimamura Method and device for plating of microarea
JPS5852034A (en) * 1981-09-14 1983-03-28 中井 繁 Box

Also Published As

Publication number Publication date
JPS5837190A (en) 1983-03-04

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