JPS5853483B2 - High-precision resistor element and its manufacturing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a high-precision resistance element having a fine particle resistance film formed of fine particles of a conductive material, and a method for manufacturing the same.

It is desired to realize a resistor element made of a resistor thin film with a large sheet resistance in order to reduce the size of the resistor element as a resistor element for a thin film circuit or a resistor element for an individual resistor.

Thin film resistive materials conventionally known to have high sheet resistance include Cr-8iO cermet, which has a sheet resistance of 30 to 1000Ω/hole, and 100Ω/hole to 100KΩ.
Although there are Ta-glass cermets having a sheet resistance of /, these are still insufficient.

Therefore, the present invention is capable of making the sheet resistance larger than these conventional products, can freely control the value of the sheet resistance, and can maintain the resistance value for a long period of time. The purpose of this invention is to provide a novel high-precision resistor element that can be used.

The present invention uses an in-gas evaporation method, that is, a method of evaporating and condensing a conductive substance in an inert gas controlled to a predetermined pressure to create fine particles having an average diameter according to the pressure. This method is characterized in that a microparticle resistive film is created by depositing the microparticles produced by the method on an insulating substrate.

Also, by hermetically housing this resistance element in a hermetic seal.

can maintain long-term stability.

It is reported in Applied Physics J, 1973, 1 that when a conductive substance such as a metal is evaporated in an inert gas, particles with a much larger particle size can be obtained than in the case of ordinary vacuum evaporation.
As is known from pages 1067 to 1085 of the January issue, the present inventors have developed a method for freely controlling the value of the sheet resistance of a particulate resistive film made of fine particles of a conductive material produced by an evaporation method in a gas. I found it.

Moreover, they also found that the value of the sheet resistance is an order of magnitude larger than that of conventional resistance elements.0 Although it is unclear why such a fine particle film has a high sheet resistance, When the particles touch each other, resistance occurs at the interface,
It can be assumed that this and the resistance of the fine particles themselves are equivalently connected in series, resulting in a high area resistance as a whole.

It has also been found that in such a fine particle resistance film, the sheet resistance value can be changed by changing the diameter of the fine particles attached.

There are various ways to change the particle diameter, such as changing the evaporation temperature, the type or composition of the inert gas as the atmospheric gas (the heavier the gas, the larger the particle size), and changing the gas pressure. Although several methods are possible, a particularly effective means is to change the gas pressure of the inert gas.

As an example, the average particle size of nickel Ni made into fine particles by the in-gas evaporation method using argon gas was observed using a transmission electron microscope, and it was found that the gas pressure of k gas was 1 t.
The particle size do of Ni fine particles when orr and the gas pressure p
The difference between the particle size d of Ni fine particles at torr is 0.
It was recognized that there was a relationship in the range of 8≦P≦20, and it was confirmed that fine particles with a desired particle size could be obtained by appropriately adjusting the gas pressure.

When the gas pressure is changed in this way, the area resistance value of the particulate resistive film changes as shown in FIG. By changing the resistance value in the range of .1 to 20 Torr, the resistance value can be changed from 103 to 1013Ω, and the area resistance value at this time is also 1o-3 to 107M.
It can be varied over a range of Ω/mouth and 10 orders of magnitude.

By controlling by gas pressure in this way, the control range of the sheet resistance value can be sufficiently widened, and moreover, it is relatively easy to adjust the sheet resistance value by simply changing the gas pressure of the inert gas. It has the advantage of being able to be controlled.

Next, a structure of a high-precision resistance element according to an embodiment of the present invention and an embodiment of a method for manufacturing the same will be described in detail.

First, FIG. 1 shows an example of its structure, and in the figure, 1
is an insulating substrate on which a predetermined pattern of electrodes 2 is formed,
The insulating substrate 1 is made of, for example, slide glass, Pyrex 7056 glass, Corning 7059 glass, forsterite porcelain, alumina porcelain, glazed alumina porcelain, beryllia, or the like.

The electrodes 2 are selectively formed on the insulating substrate 1, for example, (a) an At thin film or a Ta-Au thin film is deposited on the insulating substrate 1 of a slide glass to a thickness of approximately 3000 mm by DC sputtering through a mask; Form.

(A two-layer thin film of Cr is formed on an insulating substrate 1 of a slide glass by resistance heating vapor deposition.

→ An Ag-Pd based conductive paste is printed and fired on an insulating substrate 1 made of alumina porcelain.

(b) After forming the terminal portion of the alumina porcelain insulating substrate 1 with frit silver, an Au terminal is formed over a portion thereof.

(E) Glazed alumina porcelain substrate, Corning 705
9 Insulating substrate 1 of glass substrate or slide glass substrate
'J: A two-layer thin film of Ni-Cr (300 layers) and a circle (3000 layers) is formed by vacuum evaporation.

(c) A two-layer thin film of Cr and Pd is formed on an insulating substrate 1 made of 7059 glass or glazed alumina porcelain.

(G) An Au conductive paste is applied onto an insulating substrate 1 made of forsterite porcelain, and is formed by firing.

It may be formed by any means such as.

Furthermore, 3 is a particulate resistive film formed by adhering fine particles of a conductive substance such as metal, such as Ni, on the insulating substrate 1, and the end thereof is the end of the electrode 2. It is created to span the .

Reference numeral 4 denotes a terminal such as a metal wire whose one end is connected to the electrode 2 by means such as soldering or contact.

The above components form a resistor element.

These insulating substrates 1. A resistive element consisting of a particulate resistive film 3, a terminal 4, etc. is attached and fixed to a base 5 for a hermetic seal, and then a cap 6 for a hermetic seal is placed on top of it, and the resistor element is brought into airtight contact with the base 5 and fixed. This allows the resistor element to be hermetically sealed.

The space in the hermetic seal is filled with an inert gas such as helium or argon, or a gas 7 such as dry nitrogen that does not react with the particulate resistance film 3.

8 is an insulating sealing material filled between the terminal 4 and the base 5.

If the particulate resistive film 3 formed of the fine particles of the conductive material as described above is left exposed in the air, the resistance value may change over time due to oxidation, etc. However, as in the present invention, the particulate resistive film 3 If the resistor is hermetically sealed with a non-reactive gas filled in, there is no risk of this happening, and the resistance value can be maintained for a long period of time, making it possible to obtain a highly accurate resistor element.

Next, an example of a method for manufacturing such a high-precision resistance element will be described in the second to
This will be explained with reference to FIG.

FIG. 2 shows the structure during the manufacturing process, FIG. 3 shows a flowchart of the process, and FIG. 4 shows the configuration of the manufacturing apparatus.

First, as shown in FIG. 2A, an insulating substrate 1 as described above is prepared, terminals 4 are attached thereto, and predetermined electrodes 2 are formed on the surface by the above-described means (A).

Next, as shown in Figure 2, the substrate 1 and the terminals 4 are attached to the base 5 (B10) The base 5, etc. is fixed to the upper part of a vacuum chamber 9 such as a bell jar, and the electrode 2 is attached as shown in Figure 2 (C). A through hole 1 is formed across the exposed surface of the insulating substrate 1 and the end of the electrode 2 so as to form a particulate resistive film 3 over the end.
Attach the baffle plate 11 with 0 formed thereon (C).

Further, a heating boat 12 is provided in the lower part of the vacuum chamber 9, and a conductive evaporation material 13 such as Ni is placed therein.

A shutter 14 is provided between the insulating substrate 1 and the evaporation material 13, and is initially closed.

Next, the boat 12 is energized and heated from the power source 16 to exhaust gas from the exhaust port 15 using a vacuum pump (inert gas such as Ar gas is supplied from the D1 inert gas inlet 17). At this stage, the inside of the vacuum chamber 9 is evacuated to a degree of vacuum of 10 -7 Torr or higher.

Next, a high-purity inert gas such as argon of 99.9999% or more is supplied from the inert gas inlet 17 until a predetermined gas pressure is reached and sealed.

The gas pressure at this time is determined in accordance with the desired sheet resistance value according to the characteristics shown in FIG. 5, which will be described later.

Thereafter, power is applied to the boat 12 from the heating power source 16 to heat it (I), and the evaporation material 13 is heated to generate fine particles 18 (,T).

After the generation condition stabilizes, the shutter 14 is opened (8), and the particles 18 are attached to the ends of the insulating substrate 1 and the electrode 2 through the through hole 10 of the shielding plate 11, and the particle resistance is increased as shown in FIG. Form film 3 (L).

When the predetermined adhesion time ends, the shutter 14 is closed again M
1 Cut off the power supply 16 and stop supplying electricity to the boat 12 (
g) This completes the formation of the particulate resistance film 3.

Next, inert gas is further supplied from the inert gas inlet 17 to perform cooling. Once the 0° cooling is completed, the base 5 and the insulating substrate 1 are placed in the vacuum chamber 9 while the inert gas remains in the vacuum chamber 9. 9 or remove the shielding plate 11 (P), fit the separately prepared hermetic seal cap 6 to the base 5 in an inert gas atmosphere as shown in Fig. 2 (E). The base 5 and the cap 6 are fixed in airtight contact by bonding, gluing, electric welding, etc., and gas is filled in. After that, air is introduced from the air inlet 19 (R), and the completed resistance element is taken out. (S), the manufacturing of the resistor element is completed.

In such a manufacturing process, Ar gas is used as an inert gas, Ni is used as an evaporation material 13, and a heating boat 12 is used.
The resistance value is approximately 1. The resistance of the resistor element was created by using a tungsten boat of 0mΩ with a maximum voltage of 2μ as the heating power source 16, and by opening the shutter 14 to deposit the particles 18 and forming the particle resistance film for about 150 seconds. An example of actually measured values is shown in Fig. 5.

Here, the horizontal axis represents the gas pressure of Ar gas sealed in the vacuum chamber 9 when forming the particulate resistance film 3, and the vertical axis represents the resistance value.

As is clear from this characteristic diagram, the area resistance value of the resistance element can be arbitrarily selected over a wide range by adjusting the gas pressure of the inert gas sealed when the evaporation material 13 is evaporated to form fine particles 18. can do.

In addition, the area resistance value of this resistor element can be selected from approximately 10-3 to 107 MΩ/port depending on the gas pressure, and it is possible to obtain a much larger area resistance value than conventional ones, and is suitable for thin film circuits and other applications. This can greatly contribute to the miniaturization of resistive elements for applications.

It is also possible to create products with small area resistance values.
It also has the effect of widening the scope of application.

Note that the fine particle resistance film 3 can be created using various conductive substances other than Ni as the evaporation material, and A
It goes without saying that any inert gas other than r gas can be used as the atmospheric gas.

Furthermore, although the above-mentioned method is the simplest method for sealing gas in the hermetic seal, there is also a method of temporarily installing the hermetic seal by providing a small gap in a part of the seam between the base 5 and the cap 6. After that, use any means such as putting it into a vacuum chamber, evacuating it, then introducing a gas that does not react with the particulate resistance film, such as inert gas or dry nitrogen, and then completely closing the gap in that state. Needless to say, this is a good thing.

If the particulate resistive film is housed in a hermetic seal filled with gas in this way, the conductive material particles will not oxidize or have surface impurities attached to them, so the resistance value at the time of manufacture will be maintained for a long period of time. This has the effect of making it possible to obtain a highly accurate resistance element.

As a result of measuring the gas leakage amount using a helium leak detector for the resistance element manufactured as in the above example, the leakage amount was approximately 10"a j In 1
(/S or less, and it was confirmed that a perfect atmosphere could be maintained for about 10 years or more.

As described above, according to the present invention, it has a high sheet resistance,
Moreover, it is possible to obtain a high-precision resistance element that can stably maintain its resistance value over a long period of time.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional front view of a high-precision resistance element according to an embodiment of the present invention, and FIG. Figure 3 is a flowchart of the manufacturing process of the high-precision resistor element, Figure 4 is a cross-sectional view of the manufacturing equipment used in the manufacturing process, and Figure 5 is a cross-sectional view of the manufacturing process of the resistor element. FIG. 3 is a characteristic diagram showing the gas pressure-resistance value characteristics of the manufactured resistance element. 1... Insulating substrate, 2... Electrode, 3...
...Particle resistance film, 4...Terminal, 5...
...Base, 6...Cap, 7...
・Gas, 8...Sealing material, 9...Vacuum chamber, 10...Through hole, 11...Shiyahei plate, 12... ... Boat, 13 ... Evaporation material, 14 ... Shutter, 15 ... Exhaust port, 16 ... Heating power supply, 17 ...・Inert gas inlet, 18... Fine particles, 19...
...Air inlet.

Claims (1)

[Claims] 1. A fine particle resistance film made of fine particles of a conductive material produced by an evaporation method in a gas is deposited on an insulating substrate while controlling the average particle diameter of the fine particles during production. High precision resistance element. 2 Attach the insulating substrate on which the electrode is formed and the terminal connected to this electrode to a hermetic seal base, place this base in a vacuum chamber, fill this vacuum chamber with inert gas, and create an inert gas atmosphere. The conductive material is evaporated in the medium to create fine particles, and by controlling the gas pressure during the creation of the fine particles, the fine particles of the conductive substance are attached to the insulating substrate while controlling the average particle size of the fine particles. A method for manufacturing a high-precision resistance element, characterized in that a particulate resistance film is created, and then a gas that does not react with the particulates is sealed in the hermetic seal, and the base and the hermetic seal cap are brought into close contact and fixed. Whisker 3: Claim 2, characterized in that the step of creating a particulate resistance film and the step of closely fixing the cap to the base are performed in succession, and the base and the cap are closely fixed in an inert gas. A method for manufacturing a high-precision resistor element as described in Section 1.