JPS5857882B2 - Resistor array and its manufacturing method - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a configuration of a resistor array having an arbitrary resistance ratio and a method for manufacturing the same.

Resistor arrays having arbitrary resistance ratios are often used in various circuits, but a conventional drawback has been that it is difficult to make such resistor arrays compact.

SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a resistor array that has an arbitrary resistance ratio and can be made compact, and a method for manufacturing the same.

For this reason, in the present invention, fine particles prepared by evaporating a conductive substance using an inert gas evaporation method are oriented and provided between a plurality of electrode pairs of an insulating substrate and a The present invention is characterized in that a resistor array is constructed by forming particulate resistive films with different resistance values by setting pairs in different directions.

It is reported in ``Oyoi Physics J, November 1973, No. 1067, that when a conductive substance such as a metal is evaporated in an inert gas, fine particles with a much larger particle size can be obtained than in the case of ordinary vacuum evaporation. As is known from pages 1085 to 1085, the present inventors succeeded in creating a microparticle resistive film having a sufficiently large sheet resistance by attaching the microparticles obtained in this way onto an insulating substrate.

It is not clear why such a fine particle film has a high area resistance, but when the fine particles are deposited on an insulating substrate, resistance occurs at the interface where the fine particles come into contact with each other.
It can be assumed that this and the resistance of the fine particles themselves are connected in series in an equipolarized manner, resulting in a high area resistance as a whole.

It has also been found that in such a fine particle resistance film, the sheet resistance value can be changed by changing the diameter of the fine particles attached.

Therefore, the resistance element of the present invention has the advantage that the area resistance value can be arbitrarily determined by adjusting the diameter of the fine particles by some means.

There are various ways to change the particle size, such as changing the evaporation temperature, the type or composition of the inert gas used as the atmospheric gas (the heavier the gas, the larger the particle size), and even changing the gas pressure. Among these methods, a particularly effective method is to change the gas pressure of the inert gas.

As an example, the average particle size of nickel (Ni) made into fine particles by in-gas evaporation using argon (Ar) gas can only be observed using a transmission electron microscope. Particle size d of Ni fine particles at
.

It is recognized that there is a relationship between the particle size d of Ni fine particles when the gas pressure is P (Torr), and the following relationship exists in the range of 0.8≦P≦20: = 1 + 10g1o P O It was confirmed that fine particles with a desired particle size could be obtained by appropriately adjusting the .

Next, a structure of a resistor array according to an embodiment of the present invention and an embodiment of its manufacturing method will be described in detail.

First, FIG. 1 shows an example of its structure, and in the figure, 1 is an insulating substrate on which electrodes 2 of a predetermined pattern are formed.
056 glass, Corning 7059 glass, forsterite porcelain, alumina porcelain, glazed alumina porcelain,
Create with BeIJIJYa, etc.

Moreover, the electrode 2 and the electrodes 2a to 2h forming eight electrode pairs are arranged on the insulating substrate 1 so that the directions of the respective electrode pairs are different from each other.
selectively formed on top.

For example, (g) forming an A6 thin film or a Ta-Au thin film on an insulating substrate 1 of a glass slide to a thickness of approximately 3000 mm by DC sputtering through a mask; (b) forming a Cr film on an insulating substrate 1 of a glass slide; and Au 2
(c) forming a layer thin film by resistance heating vapor deposition; (c) printing and baking an Ag-Pd based conductive paste on the alumina porcelain insulating substrate 1; (2) forming the terminal portion of the alumina porcelain insulating substrate 1 with frit silver. (e) Glazed alumina porcelain substrate, Corning 705.
9 Insulating substrate 1 of glass substrate or slide glass substrate
Ni-Cr (300 people) and Au (3000 people) on top
Forming a two-layer thin film of Cr and Pd on an insulating substrate 1 made of 17059 glass or glazed alumina porcelain by vacuum evaporation; (G) Applying an Au conductive paste on an insulating substrate 1 made of forsterite porcelain. It may be formed by any method such as coating and baking.

Further, 3a to 3h are particulate resistance films formed by adhering fine particles of a conductive substance such as Ni produced by an evaporation method in an inert gas in the same direction using a magnetic field or an electric field to the insulating substrate 1. Its ends are electrodes 2 and 2a
The resistor elements for the resistor array are formed so as to span the ends of ~2h.

In this way, as shown in FIG. 1, the angles of the plurality of particulate resistive films 3a to 3h with respect to the applied magnetic field H, that is, the angles with respect to the orientation direction of the particulates, are different, and as a result, when forming the particulate resistive films 3a to 3h, The relationship between the Ar gas pressure and the electrical resistance value between the electrode pair is shown in FIG.

Here, the solid line is the resistance value of the resistive film 3a, and the broken line is the resistance value of the resistive film 3h.

That is, if an applied magnetic field H is applied for orientation, the electrical resistance value Ra changes according to the change in angle with respect to that direction.
It can be adjusted to any value between .

The value of the 3a to 3h area resistance of this particulate resistance film is also 10-3
~107 MΩ,/mouth.

Next, an example of a method for manufacturing such a resistance element will be described with reference to FIGS. 3 to 6.

FIG. 3 shows the structure during the manufacturing process, FIG. 4 shows a flowchart of the process, FIG. 5 shows the configuration of the manufacturing device, and FIG. 6 shows the shield plate used in the device.

First, prepare an insulating substrate 1 as shown in FIG. 3A (1), and form predetermined electrodes 2' and 23 to 2h on its surface by the above-described means as shown in FIG. The substrate 1 is fixed to the upper part of the belljar 4, and the exposed surface of the insulating substrate 1 and the electrodes are formed so as to form particulate resistance films 3a to 3h across the ends of the electrodes 2 and 2a to 2h, as shown in FIG. 3C. 2, through holes 5a to 5h spanning the ends of 2a to 2h
A shielding plate 6 with a shape of do.

A shutter 9 is provided between the insulating substrate 1 and the evaporation material 8,
Keep it closed.

Next, the exhaust port 10 is evacuated using a vacuum pump, and the CD
), the boat 7 is energized and heated to vent gas from each part (E), an inert gas such as Ar gas is supplied from the inert gas inlet 11 for cleaning (F), and the boat is exhausted from the exhaust port 10 ( (A At this stage, Bellja 4 is 10
Evacuate to a degree of vacuum greater than (Torr).

Next, a high purity inert gas such as argon of 99.9999 ml or more is supplied and sealed from the inert gas inlet 11 until a predetermined gas pressure is reached.

The gas pressure at this time is determined according to the desired sheet resistance value according to the characteristics shown in FIG.

Thereafter, the boat 7 is heated by being supplied with electricity from the heating power source 12 (2), and the evaporation material 8 is heated to generate fine particles 13 (J).

After the generation state has stabilized, the shutter 9 is opened (K), and the fine particles 13 are oriented by the magnetic poles or electrodes 15 and attached to the ends of the insulating substrate 1 and the electrodes 2 and 2a to 2h through the through holes 5 of the shield plate 6. Then, as shown in FIG. 3, the particulate resistance film 3a~
Form 3h (L).

When the predetermined adhesion time ends, the shutter 9 is closed again, the power supply 12 is cut off, and the power supply to the boat 7 is stopped.N
This completes the formation of the particulate resistance films 3a to 3h.

Next, inert gas is further supplied from the inert gas inlet 11 for cooling (0).

After cooling is completed, air is introduced (P), the shield plate 6 is removed, and the insulating substrate 1 etc. are taken out as shown in FIG. Complete array manufacturing.

In such a manufacturing process, Ar gas is used as the inert gas, Ni is used as the evaporation material 8, a tungsten boat with a resistance value of about 10 mΩ is used as the heating boat 7, and a maximum voltage of 2■ is used as the heating power source 12. FIG. 2 shows an example of the actual measurement of the resistance value of the resistor element prepared by using the following methods, and setting the shutter 9 to open and forming the particulate resistive film to deposit the particulates 13 for about 150 seconds.

Here, the horizontal axis represents the gas pressure of Ar gas sealed in the bell jar 4 when forming the particulate resistance film 3, and the vertical axis represents the resistance value.

As is clear from this characteristic diagram, the area resistance value of the resistance element can be arbitrarily selected over a wide range by adjusting the gas pressure of the inert gas sealed when the evaporation material 8 is evaporated to form the fine particles 14. can do.

In addition, the area resistance value of this resistor element can be selected from approximately 10-3 to 107 MQ/port depending on the gas pressure, and it is possible to obtain a much larger area resistance value than conventional ones, and is suitable for thin film circuits and other applications. This can greatly contribute to the miniaturization of resistive elements for applications.

It is also possible to create products with small area resistance values.
It also has the effect of widening the scope of application.

Note that the fine particle resistance film 3 can be created using various conductive substances other than Ni as the evaporation material, and A
It goes without saying that any inert gas other than r gas can be used as the atmospheric gas.

Furthermore, as shown in Fig. 2, the gas pressure of Ar gas is 8
At Torr, the resistance value of the particle resistance film 3a in which the particles 13 are oriented perpendicularly to the direction of the magnetic field H is
It was confirmed that the resistance value of the fine particle resistance film 3h, which is formed by being oriented parallel to the direction of the magnetic field H, is three lines or more larger than the resistance value.

The magnetic field H at this time was about 2500e. When forming the magnetic fine particles 13 by the in-gas evaporation method,
It has already been confirmed that the particles are aligned according to the direction of the magnetic field or the electric field, and the electrical resistance of the particle resistance films 3a to 3h can be freely adjusted according to the angle with respect to the orientation direction.

In order to form a conventional resistor array in which the resistance value varies by three orders of magnitude with the same resistance pattern, it becomes necessary to vary the resistivity of each of the resistive films 15 over a range of three orders of magnitude. It is almost difficult to simultaneously form a plurality of fine particle resistive films having different resistivities over such a large range.

On the other hand, if you try to simultaneously form resistors with values that differ by three orders of magnitude by changing the resistance pattern, you would have to change the length by three orders of magnitude or change the width by three orders of magnitude, which would be impossible. Ta.

In contrast, according to the present invention, by simply changing the angle of the resistance pattern, the same resistance pattern can be used, and at the same time, for example, three
Any resistance value over a range of orders of magnitude or more can be easily obtained.

In addition, particulate resistance films 33 to 3 created as described above
If h is used in the air as it is, it may be oxidized by air or moisture, causing deterioration over time.

In order to prevent such deterioration, an insulating protective film may be provided at least on the surface of the particulate resistance films 3a to 3h.

As this protective layer, a deposited SiO film, a silicone resin coating, a double film of a SiO deposited film and a silicone resin coating, an Si02 film formed by RF sputtering, a resin film, or the like can be used.

For example, when using a vapor deposited film such as SiQ as a protective layer and performing the vapor deposition during the process of forming a resistor element, in the apparatus shown in FIG. 5, separate from port 7 and vapor deposition material 8,
In the same way, a port on which an insulating vapor deposition material such as SiO is placed is provided (not shown), and the cooling step O using an inert gas and the air introduction step for extraction are performed in the above-mentioned manufacturing process. After cooling with an inert gas, the air is evacuated again from the exhaust port 10 to create a vacuum, and a shield plate is attached to determine the location where the protective layer is to be created, and then the insulating vapor deposition material is placed. A protective layer is formed by evaporating an insulator such as SiO on the surface of the microparticle resistance film by applying electricity to the port and heating it, and then removing the barrier plate.
All you have to do is stop the exhaust and introduce air.

As described above, according to the present invention, it is possible to obtain a small resistor array having an arbitrary low resistance value ratio.

[Brief explanation of drawings]

FIG. 1 is a sectional front view of a resistor array according to an embodiment of the present invention, FIG. 2 is a characteristic diagram showing the characteristics of the resistor array, and FIG. 3 is a resistor array of the present invention. FIG. 4 is a flowchart of the manufacturing process, FIG. 5 is a cross-sectional view of the manufacturing equipment used in the manufacturing process, and FIG. 6 is a cross-sectional view of the manufacturing process in the same manufacturing process. FIG. 3 is a plan view of the shield plate used. 1... Insulating substrate, 2, 2a to 2h...
Electrode, 3a to 3h... Particulate resistance film, 4...
...belljar, 5a-5h...through hole, 6...
...Shiyahei board, 7...Port, 8...
... Vapor deposition material, 9... Shutter, 10...
...Exhaust port, 11...Inert gas inlet port, 1
2... Heating power supply, 13... Fine particles.

Claims (1)

[Claims] 1. A plurality of electrode pairs provided in different directions on an insulating substrate, and a plurality of fine particles provided between each of the plurality of electrode pairs oriented in the same direction. A resistor array comprising a resistive film. 2. The resistance array according to claim 1, characterized in that a plurality of electrode pairs and particulate resistance films are arranged radially. 3 A plurality of pairs of electrodes are provided on an insulating substrate in different directions, the insulating substrate is placed in a container filled with gas, a conductive substance is evaporated in the gas to create fine particles, and the fine particles are A resistor array characterized in that a fine particle resistive film having a different resistance value is formed between the plurality of electrode pairs by being attached between the plurality of electrode pairs while being oriented in a certain direction by a magnetic field or an electric field. Production method.