JPS5856437U - Semiconductor junction characteristic measurement device - Google Patents
Semiconductor junction characteristic measurement deviceInfo
- Publication number
- JPS5856437U JPS5856437U JP14949081U JP14949081U JPS5856437U JP S5856437 U JPS5856437 U JP S5856437U JP 14949081 U JP14949081 U JP 14949081U JP 14949081 U JP14949081 U JP 14949081U JP S5856437 U JPS5856437 U JP S5856437U
- Authority
- JP
- Japan
- Prior art keywords
- sample
- photon beam
- semiconductor junction
- transparent electrode
- junction characteristic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図は本考案の原理を説明するための等価回路図、第
２図は光電圧の周波数依存性を示す特性図、第３図は本
考案による半導体接合特性測定装置の基本構成図である
。
１・・・・・・金属製試料台（電極）、２・・・・・・
半導体ウェハ、３・・・・・・透明電極、３′・・・・
・・ガラス基板、４・・・・・・収束レンズ、５・ｏｂ
ｅｓｅ反射鏡、６・・・・・・半透鏡、７・・・・・・
発光素子、８・・・・・・駆動電源、９・・・・・・光
検出器、１０・・・・・・同期整流増幅器、１１． １
３． １３′・・・・・・パルスＬ１２・・・・・・同
軸ケーブル、１４・・・・・・信号処理回路。Fig. 1 is an equivalent circuit diagram for explaining the principle of the present invention, Fig. 2 is a characteristic diagram showing the frequency dependence of photovoltage, and Fig. 3 is a basic configuration diagram of the semiconductor junction characteristic measuring device according to the present invention. . 1...Metal sample stand (electrode), 2...
Semiconductor wafer, 3...Transparent electrode, 3'...
...Glass substrate, 4...Convergent lens, 5.ob
ese reflecting mirror, 6...semi-transparent mirror, 7...
Light emitting element, 8... Drive power supply, 9... Photodetector, 10... Synchronous rectification amplifier, 11. 1
3. 13'... Pulse L12... Coaxial cable, 14... Signal processing circuit.
Claims (1)
する半導体試料と、上記試料に対向するように近接して
設けられた透明電極と、上記透明電極を介して上記試料
上に周波数可変のパルス化した光子ビームを照射する手
段と、上記周波数可変のパルス化した光子ビームを発生
する手段と、上記光子ビームの照射によって上記試料の
表裏間に発生する光電圧を取り出すため上記透明電極と
上記試料台との間に接続された増幅手段と、上記増幅手
段の出力信号から上記試料における′接合の遮断周波数
を求衿るための信号処理手段とを備えてなることを特徴
とする半導体接合特性測定装置。 ２ 上記増幅手段示上記光子ビームの光出力信号を参照
信書とする同期整流増幅器であることを特徴とする第１
項の半導体接合特性測定装置。[Claims for Utility Model Registration] 1. A conductive sample stage, a semiconductor sample having a bond placed on the sample stage, a transparent electrode provided in close proximity to face the sample, and the transparent electrode means for irradiating a pulsed photon beam with a variable frequency onto the sample through a means for generating the pulsed photon beam with a variable frequency; and means for generating the pulsed photon beam with a variable frequency; Amplifying means connected between the transparent electrode and the sample stage for extracting a photovoltage, and a signal processing means for determining the cutoff frequency of the junction in the sample from the output signal of the amplifying means. A semiconductor junction characteristic measuring device characterized by: 2. The amplification means is a synchronous rectification amplifier that uses the optical output signal of the photon beam as a reference message.
Semiconductor junction characteristic measuring device.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14949081U JPS5856437U (en) | 1981-10-09 | 1981-10-09 | Semiconductor junction characteristic measurement device |
| US06/432,805 US4563642A (en) | 1981-10-09 | 1982-10-05 | Apparatus for nondestructively measuring characteristics of a semiconductor wafer with a junction |
| DE8282109245T DE3271027D1 (en) | 1981-10-09 | 1982-10-06 | Apparatus for nondestructively measuring characteristics of a semiconductor wafer having a junction |
| EP82109245A EP0077021B1 (en) | 1981-10-09 | 1982-10-06 | Apparatus for nondestructively measuring characteristics of a semiconductor wafer having a junction |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14949081U JPS5856437U (en) | 1981-10-09 | 1981-10-09 | Semiconductor junction characteristic measurement device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5856437U true JPS5856437U (en) | 1983-04-16 |
Family
ID=29942258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14949081U Pending JPS5856437U (en) | 1981-10-09 | 1981-10-09 | Semiconductor junction characteristic measurement device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5856437U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58155732A (en) * | 1982-03-12 | 1983-09-16 | Hitachi Ltd | Measuring device for life of carrier |
-
1981
- 1981-10-09 JP JP14949081U patent/JPS5856437U/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58155732A (en) * | 1982-03-12 | 1983-09-16 | Hitachi Ltd | Measuring device for life of carrier |
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