JPS587044B2 - Positive temperature coefficient thermistor and its manufacturing method - Google Patents
Positive temperature coefficient thermistor and its manufacturing methodInfo
- Publication number
- JPS587044B2 JPS587044B2 JP6432279A JP6432279A JPS587044B2 JP S587044 B2 JPS587044 B2 JP S587044B2 JP 6432279 A JP6432279 A JP 6432279A JP 6432279 A JP6432279 A JP 6432279A JP S587044 B2 JPS587044 B2 JP S587044B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature coefficient
- positive temperature
- electrodes
- coefficient thermistor
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 143
- 229910052759 nickel Inorganic materials 0.000 claims description 72
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 58
- 229910052709 silver Inorganic materials 0.000 claims description 58
- 239000004332 silver Substances 0.000 claims description 58
- 238000000034 method Methods 0.000 claims description 12
- 238000000605 extraction Methods 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 4
- 238000007772 electroless plating Methods 0.000 claims description 2
- 230000005012 migration Effects 0.000 description 14
- 238000013508 migration Methods 0.000 description 14
- 238000005498 polishing Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 5
- 238000007747 plating Methods 0.000 description 5
- 238000005488 sandblasting Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000007665 sagging Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 238000011328 necessary treatment Methods 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】
本発明は正の抵抗温度係数を有するチタン酸バリウム系
半導体磁器より成る正特性サーミスタおよびその製造方
法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a positive temperature coefficient thermistor made of barium titanate semiconductor ceramic having a positive temperature coefficient of resistance, and a method for manufacturing the same.
正特性サーミスタはキュリ一温度を適当に選定すること
により任意の発熱温度が得られること、特定温度に達す
ると電気抵抗値が急激に増大し電流および発熱温度を自
動的に制御する電流制御機能または自己温度制御機能を
有すること等々の特長があり、安全で信頼性も高いこと
から、従来より、電子・電気回路における電流制御用素
子または各種の発熱装置における発熱源として、広く利
用されている。A positive temperature coefficient thermistor has a current control function that allows you to obtain any heat generation temperature by appropriately selecting the Curie temperature, and that the electrical resistance value increases rapidly when a specific temperature is reached, automatically controlling the current and heat generation temperature. Because it has features such as having a self-temperature control function, and is safe and reliable, it has been widely used as a current control element in electronic/electric circuits or as a heat source in various heat generating devices.
この正特性サーミスタは、その用途に応じて種種の形態
、構造をとるものであるが、複写機の複写紙加熱乾燥も
しくは定着用加熱装置における発熱素子として使用する
場合等には、たとえば第1図A,Bに示すように、貫通
孔1を有して円板状に形成された正特性サーミスタ素体
2の両面に電極3,4を設けると共に、貫通孔1のまわ
りに電極3,4を隔てるギャップG1を設けたものが使
用される。This positive temperature coefficient thermistor takes various forms and structures depending on its use, but when used as a heating element in a heating device for heating and drying copy paper in a copying machine or for fixing, for example, as shown in FIG. As shown in A and B, electrodes 3 and 4 are provided on both sides of a PTC thermistor body 2 formed in a disk shape with a through hole 1, and electrodes 3 and 4 are provided around the through hole 1. A device with a separating gap G1 is used.
前記電極3,4は、正特性サーミスタ素体2の表面上に
ニッケル無電解メッキ法により被着形成されたニッケル
層3a,4aと、該ニッケル層3a,4aの耐酸化性半
田付け性の向上等を目的として印刷焼付けされた銀層3
b,4bとの二層構造となっており、銀層3b,4bは
ニッケル層3a,4aの全面を覆うように印刷形成され
ている。The electrodes 3 and 4 include nickel layers 3a and 4a deposited on the surface of the PTC thermistor body 2 by electroless nickel plating, and improved oxidation resistance and solderability of the nickel layers 3a and 4a. Silver layer 3 printed and baked for the purpose of
It has a two-layer structure with silver layers 3b and 4b, and the silver layers 3b and 4b are printed so as to cover the entire surface of the nickel layers 3a and 4a.
上述のギャップG1は、この正特性サーミスタが第2図
a1〜a4に示す製造工程に従って製造されることから
、必要となるものである。The above-mentioned gap G1 is necessary because this positive temperature coefficient thermistor is manufactured according to the manufacturing process shown in FIG. 2 a1 to a4.
すなわち、第2図a1に示すように貫通孔1を有してド
ーナツ円板状に形成された正特性サーミスタ素体2に対
し、第2図a2に示すように、その全表面にニッケル無
電解メッキ法によるニッケル層5を被着し、かつ熱処理
などの必要な処理を施した後、第2図83に示すように
、厚み方向の両面におけるニッケル層5の全面に、フリ
ット含有銀ペースト等を印刷焼付けして銀層6を形成し
、次に第2図a4に示すように、貫通孔1のまわりのニ
ッケル層5、銀層6および外周部のニッケル層5を、サ
ンドブラストまたはセンタレス研磨などによって削除す
る。That is, as shown in FIG. 2 a1, a positive temperature coefficient thermistor body 2 formed in a donut disk shape with a through hole 1 is coated with nickel electroless on its entire surface, as shown in FIG. 2 a2. After depositing the nickel layer 5 by plating and performing necessary treatments such as heat treatment, a frit-containing silver paste or the like is applied to the entire surface of the nickel layer 5 on both sides in the thickness direction, as shown in FIG. A silver layer 6 is formed by printing and baking, and then, as shown in FIG. delete.
これによって、ニッケル層5が正特性サーミスタ素体2
の厚み方向両面側で、ギャップG1により切り離され、
第1図A,Bに示すような電極3,4を備えた正特性サ
ーミスタが得られる。As a result, the nickel layer 5 becomes the positive temperature coefficient thermistor body 2.
is separated by a gap G1 on both sides in the thickness direction,
A positive temperature coefficient thermistor having electrodes 3 and 4 as shown in FIGS. 1A and 1B is obtained.
この場合、貫通孔1内のニッケル層5は削除できないの
でそのまま残るが、ギャップG1によって電極3,4が
互に独立される。In this case, the nickel layer 5 in the through hole 1 cannot be removed and remains as it is, but the electrodes 3 and 4 are made independent of each other by the gap G1.
しかし、ニッケル層5上に銀層6を印刷した場合、第3
図a,に拡大して示すように、銀ペーストが貫通孔1の
内部および外周部に垂れ込み、垂れ込み部a,bが生じ
るため、第3図82に示すように、ギャップG1を形成
すべく貫通孔1のまわりをサンドブラスト7等によって
削除した場合に、垂れ込み部aが貫通孔1内に残存する
。However, if the silver layer 6 is printed on the nickel layer 5, the third
As shown in the enlarged view in FIG. When the area around the through hole 1 is removed by sandblasting 7 or the like, the hanging portion a remains inside the through hole 1.
貫通孔1は当該正特性サーミスタを固定する場合に絶縁
パイプや止ネジ等を貫通させるために使用するものであ
り、前述のように垂れ込み部aが残ると内径が縮小して
しまい、絶縁パイプや止ネジを挿通させる作業が非常に
困難になる。The through hole 1 is used to pass an insulating pipe, set screw, etc. through when fixing the PTC thermistor, and as mentioned above, if the sagging part a remains, the inner diameter will be reduced, and the insulating pipe This makes it very difficult to insert the set screw.
さらに、この垂れ込み部aを削除しようとすれば、正特
性サーミスタ素体等が削り取られ、特性の変動を招く〇
また貫通孔1のまわりをサンドブラストによって研削す
る場合、外周部をセンタレス研磨によって研削する場合
のいずれの場合にも、ニッケル層5と銀層6が同時に研
削されるため、銀層6の展延性、粘着性によりニッケル
層5と銀層6とが互に絡み合い、研削性が悪くなるうえ
に、電極剥離などを招くこともあった。Furthermore, if an attempt is made to remove this sagging part a, the positive temperature coefficient thermistor element etc. will be scraped off, leading to variations in the characteristics. Also, if the area around the through hole 1 is ground by sandblasting, the outer periphery will be ground by centerless polishing. In either case, the nickel layer 5 and the silver layer 6 are ground at the same time, so the nickel layer 5 and the silver layer 6 become entangled with each other due to the malleability and adhesiveness of the silver layer 6, resulting in poor grindability. Moreover, it may also lead to electrode peeling.
ニッケル層5を研削して両面のニッケル層5を互に切り
離してから銀層6を印刷するようにすれば、銀層6の絡
みによる不具合は解決し得るが、この場合には、銀層6
の印刷位置がズレてギャップG1の距離が変動し、耐電
圧の低下など信頼性の低下を招へこのような欠点を除去
しようとすれば、銀層6の印刷位置を高精度で位置決め
しなければならず、作業性が悪くなる。If the nickel layer 5 is ground and the nickel layers 5 on both sides are separated from each other before the silver layer 6 is printed, the problem caused by the entanglement of the silver layer 6 can be solved, but in this case, the silver layer 6
The printing position of the silver layer 6 shifts and the distance of the gap G1 fluctuates, leading to a decrease in reliability such as a decrease in withstand voltage.In order to eliminate such defects, the printing position of the silver layer 6 must be positioned with high precision. This will result in poor workability.
さらに上述の製造工程における諸欠点とは別に、該正特
性サーミスタを実際に使用する場合には、マイグレーシ
ョン現象による電極間短絡事故を招き易いという重大な
欠点もあった。Furthermore, in addition to the various drawbacks in the manufacturing process described above, when the positive temperature coefficient thermistor is actually used, there is also a serious drawback in that it is susceptible to short-circuit accidents between electrodes due to migration phenomena.
すなわち第1図A.Bに示すように銀層3b,4bの端
縁がニッケル層3a,4aの端縁上にあり、第4図に示
すように電極板8,9を電極3,4上に重ねた場合に、
銀層3b,4bの端縁が外気に直接触れる。That is, FIG. 1A. When the edges of the silver layers 3b and 4b are on the edges of the nickel layers 3a and 4a as shown in B, and the electrode plates 8 and 9 are stacked on the electrodes 3 and 4 as shown in FIG.
The edges of the silver layers 3b and 4b are in direct contact with the outside air.
このため電極板8,9を介して電極3,4に電位差を与
えて発熱動作をさせたとき、高温雰囲気の中で銀層3b
,4bが外気の湿分に触れ、銀の移動現象、すなわちマ
イグレーション現象が発生する。Therefore, when a potential difference is applied to the electrodes 3 and 4 via the electrode plates 8 and 9 to generate heat, the silver layer 3b
, 4b come into contact with moisture in the outside air, and a silver movement phenomenon, that is, a migration phenomenon occurs.
しかも、前述のように、電極3,4を隔てるギャップG
1は、比較的短かい清面距離を有するたけであるから、
前述のようなマイグレーション現象を生じた場合には、
貫通孔1内のニッケル層5を介して、電極3,4が容易
に短絡されてしまう。Moreover, as mentioned above, the gap G separating the electrodes 3 and 4
1 only has a relatively short surface distance, so
If the migration phenomenon described above occurs,
The electrodes 3 and 4 are easily short-circuited via the nickel layer 5 in the through hole 1.
すなわち従来の正特性サーミスタは電極構造がマイグレ
ーション現象を生じ易い構造であるうえに、マイグレー
ション現象を生じた場合には電極間短絡事故を招き易い
という欠点があったのである。In other words, the conventional positive temperature coefficient thermistor has the drawback that it has an electrode structure that is susceptible to migration phenomena, and when migration phenomena occur, it is likely to cause a short-circuit accident between the electrodes.
本発明は上述する諸欠点を一掃し、マイグレーション現
象による電極間短絡事故が生じ難く、しかも銀層の印刷
位置ズレを生じてもギャップの距離が変動することがな
い信頼性の高い正特性サーミスタを提供すること、およ
び電極層の一部削除により対の電極として独立させる場
合に、形状の均一性を保ちながら電極層を容易に削除す
ることができ、しかも電極剥離事故などを生じることの
ない正特性サーミスタの製造方法を提供することを目的
とする。The present invention eliminates the above-mentioned drawbacks and provides a highly reliable positive temperature coefficient thermistor that is less prone to short-circuit accidents between electrodes due to migration phenomena, and in which the gap distance does not change even if the printing position of the silver layer is misaligned. In addition, when part of the electrode layer is removed to make it independent as a counter electrode, the electrode layer can be easily removed while maintaining the uniformity of the shape, and the electrode layer can be easily removed without causing electrode peeling accidents. An object of the present invention is to provide a method for manufacturing a characteristic thermistor.
上記目的を達成するため、本発明は正特性サーミスタ素
体の電極形成面に対の電極を隔てるギャップを有する正
特性サーミスタにおいて、前記電極は、前記正特性サー
ミスタ素体上に被着さわたニッケル層と、該ニッケル層
上に被着されかつ前記ギャップ側端縁が前記ニッケル層
の前記ギャップ側端縁より内側に位置する銀層とより成
ることを特徴とする。In order to achieve the above object, the present invention provides a positive temperature coefficient thermistor having a gap separating a pair of electrodes on the electrode forming surface of the positive temperature coefficient thermistor element, wherein the electrode is made of nickel coated on the positive temperature coefficient thermistor element. and a silver layer deposited on the nickel layer, the gap-side edge being located inside the gap-side edge of the nickel layer.
また本発明に係る製造方法は、正特性サーミスク素体の
電極形成面に対の電極を隔てるギャップを有する正特性
サーミスタを製造する方法において、正特性サーミスタ
素体の全面にニッケル無電解メッキ法によりニッケル層
を被着した後、前記ギャップを形成する領域の外側のニ
ッケル層上に銀層を被着形成し、次に前記ギャップを形
成する領域のニッケル層を削除することを特徴とする。Further, the manufacturing method according to the present invention is a method for manufacturing a positive temperature coefficient thermistor having a gap separating a pair of electrodes on the electrode forming surface of the positive temperature coefficient thermistor element, in which the entire surface of the positive temperature coefficient thermistor element is coated with a nickel electroless plating method. After depositing the nickel layer, a silver layer is deposited on the nickel layer outside the region where the gap is to be formed, and then the nickel layer in the region where the gap is to be formed is removed.
以下実施例たる添付図面を参照し、本発明の内容を詳細
に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described in detail below with reference to the accompanying drawings, which are examples.
第5図A,B〜第8図A,Bは、いずれも本発明に係る
正特性サーミスタの実施例を示し、第5図A〜第8図A
は斜視図、第5図B〜第8図Bは第5図A〜第8図Aの
(XI−Xi)〜(X4−X4)線上における各断面図
を示している。5A, B to 8A, B all show examples of positive temperature coefficient thermistors according to the present invention, and FIGS. 5A to 8A
5A to 8B are perspective views, and FIGS. 5B to 8B are sectional views taken along lines (XI-Xi) to (X4-X4) in FIGS. 5A to 8A.
まず、第5図A,Bは、すでに第1図A,Bにおいて説
明した正特性サーミスクと同じ貫通型のものを示してい
る。First, FIGS. 5A and 5B show the same through-type thermistor as the PTC thermistor already explained in FIGS. 1A and 1B.
この実施例の特徴は、ギャップG1を有して正特性サー
ミスタ素体2の両面に被着されたニッケル層3a,4a
の上に、該ニッケル層3a才たは4aの内端E1、外端
E2から内側に、ギャップW1,W2を隔てて、銀層3
b,4bを、円環状に設けたことである。The feature of this embodiment is that the nickel layers 3a and 4a are deposited on both sides of the PTC thermistor body 2 with a gap G1.
Above, a silver layer 3 is placed inwardly from the inner end E1 and outer end E2 of the nickel layer 3a or 4a, with gaps W1 and W2 in between.
b, 4b are provided in an annular shape.
このような構造であると、ギャップG1がニッケル層3
a,4aによって定まり、銀層3b,4bがニッケル層
3a,4a上に印刷される限り、その印刷位置には無関
係になるから、銀層3b,4bの印刷位置ズレによって
ギャップG1の幅が変動するといった事態が起らなくな
り、印刷位置ズレによる耐電圧の低下や電極間短絡事故
がほぼ完全に防止できる。With such a structure, the gap G1 is close to the nickel layer 3.
a, 4a, and as long as the silver layers 3b, 4b are printed on the nickel layers 3a, 4a, the width of the gap G1 changes depending on the printing position shift of the silver layers 3b, 4b, since it is irrelevant to the printing position. This eliminates the occurrence of such situations, and it is possible to almost completely prevent a decrease in withstand voltage due to misalignment of printing positions and short-circuit accidents between electrodes.
また銀層3b,4bの端縁から貫通孔1内のニッケル層
5までの清面距離が、ギャップW1だけ拡大されるから
、銀層3b,4bのマイグレーションによる電極間短絡
事故が、それだけ生じ難くなる。In addition, since the distance from the edge of the silver layers 3b, 4b to the nickel layer 5 in the through hole 1 is expanded by the gap W1, short-circuit accidents between electrodes due to migration of the silver layers 3b, 4b are less likely to occur. Become.
しかも第9図に示したように電極3,4の上に電極板8
,9を重ねた場合、電極板8,9の下面8a,9aと、
ニッケル層3a,4aとの間に、銀層3b,4bの層厚
だけの隙間d。Moreover, as shown in FIG. 9, an electrode plate 8 is placed on the electrodes 3 and 4.
, 9 are overlapped, the lower surfaces 8a, 9a of the electrode plates 8, 9,
A gap d corresponding to the layer thickness of the silver layers 3b and 4b is provided between the nickel layers 3a and 4a.
が形成される。銀層3b,4bの層厚はせいぜい10μ
程度の微小層であるから、銀層3b,4bが実質的に外
気から遮断された状態になり、まわりに高温多湿の雰囲
気があったとしても、銀層3b,4bがこれに触れるこ
とはない。is formed. The thickness of the silver layers 3b and 4b is at most 10μ
Because the layer is so small that the silver layers 3b and 4b are substantially cut off from the outside air, even if there is a high temperature and humidity atmosphere around them, the silver layers 3b and 4b will not come into contact with it. .
この結果銀層3b,4bのマイグレーション現象が効果
的に抑制される。As a result, the migration phenomenon of the silver layers 3b and 4b is effectively suppressed.
したがってこの実施例によれば、電極間浴面距離の拡大
と、マイグレーション現象抑制作用とにより、マイグレ
ーション現象に基づく電極間短絡事故をほぼ完全に防止
することができる。Therefore, according to this embodiment, by increasing the bath surface distance between the electrodes and suppressing the migration phenomenon, short-circuit accidents between the electrodes due to the migration phenomenon can be almost completely prevented.
また第6図A,Bに示すものは、正特性サーミスタ素体
2の一面に、ニッケル層3aを円環状に形成し、該ニッ
ケル層3aの上に、その端縁E3,E4からギャップW
3,W4をとって、同軸円環状の銀層3bを形成すると
共に、該電極3によって囲まれた領域内に、貫通孔1の
ニッケル層5を介して下面の電極4に導通接続された引
出し電極10を、円環状のギャップG1を介して対向配
置した構造としてある。Further, in the case shown in FIGS. 6A and 6B, a nickel layer 3a is formed in an annular shape on one surface of the PTC thermistor body 2, and a gap W is formed on the nickel layer 3a from its edges E3, E4.
3, W4 is taken to form a coaxial annular silver layer 3b, and a drawer conductively connected to the electrode 4 on the lower surface via the nickel layer 5 of the through hole 1 in the area surrounded by the electrode 3. The electrodes 10 are arranged to face each other with an annular gap G1 interposed therebetween.
前記引出し電極10は、ニッケル層10aと、該ニッケ
ル層10aのギャップ側端縁E5から、ギャップW5だ
け内側に形成された銀層10bとより構成されている。The extraction electrode 10 is composed of a nickel layer 10a and a silver layer 10b formed inside by a gap W5 from the gap side edge E5 of the nickel layer 10a.
また下面側の電極4もニッケル層4aの外端縁E6より
ギャップW6だけ内側に、銀層4bを形成してある。Further, the electrode 4 on the lower surface side also has a silver layer 4b formed inside the outer edge E6 of the nickel layer 4a by a gap W6.
この実施例においても、銀層3b,10bの印刷位置ズ
レによるギャップG1の幅の変動を避けることができる
こと、電極間清面距離の拡大によりマイグレーション現
象に基づく電極間短絡事故を防止することができること
等々の効果がある。In this example as well, it is possible to avoid fluctuations in the width of the gap G1 due to misalignment of the printing positions of the silver layers 3b and 10b, and it is possible to prevent short-circuit accidents between the electrodes due to the migration phenomenon by increasing the surface distance between the electrodes. There are other effects.
なお、この実施例は、電極3と、引出し電極10が同一
面側に存在し、同一面側から電極3,4を引き出すこと
ができる利点がある。Note that this embodiment has the advantage that the electrode 3 and the extraction electrode 10 are present on the same side, and the electrodes 3 and 4 can be drawn out from the same side.
第7図A,Bは正特性サーミスタ素体2の一面に対の電
極3,4を設けると共に、他面に中間電極11を設けた
構造のものを示している。7A and 7B show a structure in which a pair of electrodes 3 and 4 are provided on one surface of the PTC thermistor body 2, and an intermediate electrode 11 is provided on the other surface.
この実施例の場合も、同一面側から電極3,4を引き出
し得る利点がある。This embodiment also has the advantage that the electrodes 3 and 4 can be drawn out from the same side.
電極3,4は、ギャップG1を隔てて半円弧状に形成さ
れたニッケル層3a,4a上に、その端縁E7,E8か
らギャップW7,W8だけ内側に銀層3a,4bを形成
した構造となっている、また中間電極11もニッケル層
11aと、該ニッケル層11a上にその端縁E,からギ
ャップW,たけ内側に形成した銀層1lbとの二層構造
となっている。The electrodes 3 and 4 have a structure in which silver layers 3a and 4b are formed on the nickel layers 3a and 4a formed in a semicircular arc shape with a gap G1 separated from the edges E7 and E8 by gaps W7 and W8. The intermediate electrode 11 also has a two-layer structure including a nickel layer 11a and a silver layer 1lb formed on the nickel layer 11a from the edge E to the gap W and inside the nickel layer 11a.
さらに第8図A,Bに示すものは、ニッケル層3a上に
、その端縁EIO,EllからギャップW1o,W11
だけ内側に、銀層3bを形成すると共に、この電極3と
同一の面上に、下面の電極4の引出し電極12を、ギャ
ップG1を隔てて対向配置した構造としてある。Further, in the case shown in FIGS. 8A and 8B, gaps W1o and W11 are formed on the nickel layer 3a from the edges EIO and Ell.
A silver layer 3b is formed on the inner side, and the lead electrode 12 of the lower electrode 4 is disposed on the same surface as the electrode 3, facing each other with a gap G1 in between.
引出し電極12は、正特性サーミスタ素体2の外周部に
設けた凹部13の外周ニッケル層14によって下面の電
極4に導通接続されており、このニッケル層14から延
長されたニッケル層12a上に、その端縁E12からギ
ャップW12だけ内側に、銀層12bを設けてある。The extraction electrode 12 is electrically connected to the lower electrode 4 by an outer nickel layer 14 in a recess 13 provided on the outer periphery of the PTC thermistor body 2, and on a nickel layer 12a extending from this nickel layer 14, A silver layer 12b is provided inside the edge E12 by a gap W12.
上述の第7図、第8図に示した実施例のいずれも、第5
図、第6図と同様の効果を得ることができる。Both of the embodiments shown in FIG. 7 and FIG.
It is possible to obtain the same effect as shown in FIGS.
次に第10図a1〜a4を参照し、本発明に係る正特性
サーミスタの製造方法について説明する。Next, a method for manufacturing a positive temperature coefficient thermistor according to the present invention will be described with reference to FIGS. 10 a1 to a4.
この実施例は、第5図に示した正特性サーミスクを製造
する方法を示しているが、第6図〜第8図に示した正特
性サーミスタの製造方法にも同様に適用し得るものであ
る。This example shows a method for manufacturing the positive temperature coefficient thermistor shown in FIG. 5, but it can be similarly applied to the manufacturing method for the positive temperature coefficient thermistor shown in FIGS. 6 to 8. .
まず、第10図a1に示すように、正特性サーミスタ素
体2の全表面にニッケル無電解メッキ法によりニッケル
層15を被着形成する。First, as shown in FIG. 10a1, a nickel layer 15 is deposited on the entire surface of the PTC thermistor body 2 by electroless nickel plating.
次に熱処理等の必要な処理を施した後、第10図32に
示すよウニ、ニッケル層15の上にフリット含有銀ペー
ストを印刷して銀層16を形成し、かつ焼付ける。Next, after performing necessary treatments such as heat treatment, a frit-containing silver paste is printed on the sea urchin and nickel layer 15 to form a silver layer 16, as shown in FIG. 10, and baked.
銀層16の印刷にあたっては、ニッケル層15の端縁E
13,E14より銀層16の端縁E15,E16が、ギ
ャップW13,W14だけ内側に位置し、ニッケル層1
5の露出部分17が残るように印刷形成する。When printing the silver layer 16, the edge E of the nickel layer 15
The edges E15 and E16 of the silver layer 16 are located inside the gaps W13 and W14 from the nickel layer 13 and E14.
Printing is performed so that the exposed portion 17 of No. 5 remains.
これにより垂れ込みが防止される。This prevents sagging.
次に第10図a3に示すように、サンドブラスト等によ
り、貫通孔1のまわりに形成されたニッケル層15の露
出部分17をギャップG1だけ削除する。Next, as shown in FIG. 10a3, the exposed portion 17 of the nickel layer 15 formed around the through hole 1 is removed by a gap G1 by sandblasting or the like.
この場合、銀層16は削除せず、その端縁El5,E1
6がニッケル層15の端縁E17,E18よリギャップ
W17,W18だけ内側に位置するように削除する。In this case, the silver layer 16 is not removed and its edges El5, E1
6 is removed so that it is located inside the edges E17, E18 of the nickel layer 15 by re-gaps W17, W18.
このようにすれば、銀層16の研磨に伴う諸欠点、すな
わち銀層16の絡みによる研磨作業性の低下や、電極剥
離事故などを生じることなく、研磨性の良好なニッケル
層15だけを研磨することができる。In this way, only the nickel layer 15, which has good polishing properties, can be polished without causing various drawbacks associated with polishing the silver layer 16, such as deterioration of polishing workability due to entanglement of the silver layer 16, electrode peeling accidents, etc. can do.
次に第10図a4に示すように、外周部のニッケル層1
5をセンクレス研磨によって削除する。Next, as shown in Figure 10 a4, the nickel layer 1 on the outer periphery
5 is removed by Senkless polishing.
これによって第5図A,Hに示すような正特性サーミス
クが完成するわけであるが、このセンクレス研磨の際も
、銀層16が研磨されることがないから、前述のサンド
ブラストによる研磨のときと同様に、電極剥離などの事
故を招くことなく、容易に研磨することができる。As a result, a positive temperature coefficient thermistork as shown in FIGS. 5A and 5H is completed, but since the silver layer 16 is not polished during this cenless polishing, it is different from the polishing by sandblasting described above. Similarly, polishing can be easily performed without causing accidents such as electrode peeling.
以上のように、本発明は、正特性サーミスタ素体の電極
形成面に対の電極を隔てるギャップを有する正特性サー
ミスクにおいて、前記電極は前記正特性サーミスタ素体
上に被着されたニッケル層と、該ニッケル層上に被着さ
れかつ前記ギャップ側端縁が前記ニッケル層の前記ギャ
ップ側端縁より内側に位置する銀層とより構成されるこ
とを特徴とするから、次のような効果がある。As described above, the present invention provides a positive temperature coefficient thermistor having a gap separating a pair of electrodes on the electrode formation surface of the positive temperature coefficient thermistor element, in which the electrodes are connected to a nickel layer deposited on the positive temperature coefficient thermistor element. , the silver layer is deposited on the nickel layer and the edge on the gap side is located inside the edge on the gap side of the nickel layer, so the following effects can be obtained. be.
(1)電極間距離が拡大されマイグレーションによる電
極間短絡事故が起り難くなる。(1) The distance between the electrodes is expanded, making it difficult for short-circuit accidents between the electrodes to occur due to migration.
(2)銀層の印刷位置ズレを生じても、ギャップの幅が
変動することがないから、電極間距離がギャップの幅に
よって定まる一定の距離に保たれ、信頼性が向上する。(2) Even if the printing position of the silver layer is misaligned, the width of the gap does not change, so the distance between the electrodes is maintained at a constant distance determined by the width of the gap, improving reliability.
(3)銀層の印刷形成作業が容易である。(3) Printing and forming the silver layer is easy.
(4)電極上に電極板を重ねるタイプのものでは、銀層
のマイグレーション現象の発生を抑制し、マイグレーシ
ョンに基づく電極間短絡事故をほぼ完全になくすること
ができる。(4) In the case of a type in which an electrode plate is stacked on top of an electrode, the occurrence of silver layer migration phenomenon can be suppressed, and short-circuit accidents between electrodes due to migration can be almost completely eliminated.
また本発明に係る製造方法は、上述の正特性サーミスタ
を得るにあたり、正特性サーミスタ素体の全面にニッケ
ル無電解メッキ法によりニッケルメッキ層を被着した後
、ギャップを形成する領域の外側のニッケル層上に銀層
を被着形成し、次に前記ギャップを形成する領域のニッ
ケル層を削除することを特徴とするから、対の電極を隔
てるギャップ形成にあたり、サンドブラストまたはセン
タレス研磨により電極の一部を削除する場合に、研磨性
の良好なニッケル層だけを研磨すればよく、銀層の研磨
による諸欠点、すなわち研磨性の悪さや、電極剥離事故
を避けることができる。Further, in the manufacturing method according to the present invention, in order to obtain the above-mentioned PTC thermistor, a nickel plating layer is deposited on the entire surface of the PTC thermistor element by electroless nickel plating, and then nickel is coated on the outside of the region where the gap is formed. The method is characterized in that a silver layer is deposited on the layer, and then the nickel layer in the area where the gap is to be formed is removed.When forming the gap separating the pair of electrodes, a part of the electrode is removed by sandblasting or centerless polishing. When removing the nickel layer, it is necessary to polish only the nickel layer, which has good polishability, and it is possible to avoid the various drawbacks caused by polishing the silver layer, such as poor polishability and electrode peeling accidents.
また銀層はニッケル層の内側に印刷されるので、印刷時
の銀ペーストの垂れなどもなく、垂れを削除するための
工程も必要としないから、形状の均一性が保たれ、特性
の安定したものを、能率良く製造することができる。In addition, since the silver layer is printed inside the nickel layer, there is no dripping of the silver paste during printing, and there is no need for a process to remove dripping, so the uniformity of the shape is maintained and the characteristics are stable. Things can be manufactured efficiently.
第1図A,Bは従来の正特性サーミスタの斜視図および
断面図、第2図a1〜a4はその製造工程図、第3図a
l,a2は第2図a1〜a4の製造工程における欠点を
説明する図、第4図は第1図A,Bに示す正特性サーミ
スタの使用時における欠点を説明する図、第5図A,B
〜第8図A,Bはいずれも本発明に係る正特性サーミス
タの各実施例を示し、第5図A〜第8図Aはその斜視図
、第5図B〜第8図Bは第5図A〜第8図Aの(X1一
Xt)〜(X4−X4)線上における各断面図、第9図
は第5図A,Bに示した正特性サーミスタの使用状態に
おける効果を説明する図、第10図は本発明に係る正特
性サーミスタの製造方法の工程図である。
1・・・・・・貫通孔、2・・・・・・正特性サーミス
タ、3,4・・・・・・電極、3a,4a・・・・・・
ニッケル層、3b,4b・・・・・・銀層、5・・・・
・・ニッケル層、G1・・・・・・ギャップ。Figures 1A and B are a perspective view and a sectional view of a conventional positive temperature coefficient thermistor, Figures 2 a1 to a4 are manufacturing process diagrams, and Figure 3 a
1, a2 are diagrams explaining the defects in the manufacturing process of FIGS. 2 a1 to a4, FIG. 4 is a diagram explaining the defects when using the positive temperature coefficient thermistor shown in FIGS. B
~ Figures 8A and 8B both show respective embodiments of the positive temperature coefficient thermistor according to the present invention, Figures 5A to 8A are perspective views thereof, and Figures 5B to 8B are perspective views of the positive temperature coefficient thermistor according to the present invention. Figures A to 8 are cross-sectional views taken along lines (X1 - Xt) to (X4 - , FIG. 10 is a process diagram of a method for manufacturing a positive temperature coefficient thermistor according to the present invention. 1... Through hole, 2... Positive temperature coefficient thermistor, 3, 4... Electrode, 3a, 4a...
Nickel layer, 3b, 4b...Silver layer, 5...
...Nickel layer, G1...gap.
Claims (1)
てるギャップを有する正特性サーミスクにおいて、前記
電極は前記正特性サーミスタ素体上に被着されたニッケ
ル層と、該ニッケル層上に被着されかつ前記ギャップ側
端縁が前記ニッケル層のギャップ側端縁より内側に位置
する銀層とより構成されることを特徴とする正特性サー
ミスタ。 2 貫通孔を有して平板状に形成された正特性サーミス
タ素体の両面に対の電極を有し、該対の電極は前記貫通
孔の内周面と各電極との間に形成されたギャップによっ
て隔てられることを特徴とする特許請求の範囲第1項に
記載の正特性サーミスタ。 3 貫通孔を有して平板状に形成された正特性サーミス
タ素体の両面に対の電極を有し、該対の電極の一方は前
記貫通孔を介して前記対の電極の他方と同一の面に引き
出された引出し電極を有し、該引出し電極と前記対の電
極の他方との間に前記ギャップを有して成ることを特徴
とする特許請求の範囲第1項に記載の正特性サーミスタ
。 4 平板状に形成された正特性サーミスタの両面に対の
電極を有し、該対の電極の一方は前記正特性サーミスタ
の外周部に設けた凹部を介して前記対の電極の他方と同
一の面上に引き出された引出し電極を有し、該引出し電
極と前記対の電極の他方との間に前記ギャップを有して
成ることを特徴とする特許請求の範囲第1項に記載の正
特性サーミスタ。 5 前記対の電極は前記正特性サーミスタの同一面上に
設けられたことを特徴とする特許請求の範囲第1項に記
載の正特性サーミスタ。 6 正特性サーミスタ素体の電極形成面上に対の電極を
隔てるギャップを有する正特性サーミスクを製造する方
法において、正特性サーミスク素体の全面にニッケル無
電解メッキ法によりニッケル層を被着した後、前記ギャ
ップを形成する領域の外側のニッケル層上に銀層を被着
形成し、次にギャップを形成する領域のニッケル層を削
除することを特徴とする正特性サーミスクの製造方法。[Scope of Claims] 1. A positive temperature coefficient thermistor having a gap separating a pair of electrodes on the electrode forming surface of the positive temperature coefficient thermistor element, wherein the electrode includes a nickel layer deposited on the positive temperature coefficient thermistor element, and a nickel layer deposited on the positive temperature coefficient thermistor element. A positive temperature coefficient thermistor comprising a silver layer deposited on a nickel layer, the edge on the gap side being located inside the edge on the gap side of the nickel layer. 2. A positive temperature coefficient thermistor body formed in a flat plate shape with a through hole has a pair of electrodes on both sides thereof, and the pair of electrodes is formed between the inner circumferential surface of the through hole and each electrode. A positive temperature coefficient thermistor according to claim 1, characterized in that the positive temperature coefficient thermistor is separated by a gap. 3. A positive temperature coefficient thermistor element formed in a flat plate shape with a through hole has a pair of electrodes on both sides, and one of the pair of electrodes is connected to the same electrode as the other of the pair of electrodes through the through hole. A positive temperature coefficient thermistor according to claim 1, characterized in that the positive temperature coefficient thermistor has an extraction electrode drawn out on a surface, and has the gap between the extraction electrode and the other of the pair of electrodes. . 4 A positive temperature coefficient thermistor formed in a flat plate has a pair of electrodes on both sides, and one of the pair of electrodes is connected to the same electrode as the other of the pair of electrodes through a recess provided in the outer periphery of the positive temperature coefficient thermistor. The positive characteristic according to claim 1, characterized in that the positive characteristic has an extraction electrode drawn out on a surface, and has the gap between the extraction electrode and the other of the pair of electrodes. thermistor. 5. The PTC thermistor according to claim 1, wherein the pair of electrodes are provided on the same surface of the PTC thermistor. 6 In a method for manufacturing a positive temperature coefficient thermistor having a gap separating a pair of electrodes on the electrode forming surface of a positive temperature coefficient thermistor element, after depositing a nickel layer on the entire surface of the positive temperature coefficient thermistor element by nickel electroless plating method. . A method for producing a positive temperature coefficient thermistorc, comprising depositing a silver layer on the nickel layer outside the region where the gap is to be formed, and then removing the nickel layer in the region where the gap is to be formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6432279A JPS587044B2 (en) | 1979-05-24 | 1979-05-24 | Positive temperature coefficient thermistor and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6432279A JPS587044B2 (en) | 1979-05-24 | 1979-05-24 | Positive temperature coefficient thermistor and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55156301A JPS55156301A (en) | 1980-12-05 |
| JPS587044B2 true JPS587044B2 (en) | 1983-02-08 |
Family
ID=13254878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6432279A Expired JPS587044B2 (en) | 1979-05-24 | 1979-05-24 | Positive temperature coefficient thermistor and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS587044B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60149825A (en) * | 1984-01-17 | 1985-08-07 | Osaka Gas Co Ltd | Flame diminishing safety device in burner |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02136302U (en) * | 1989-04-18 | 1990-11-14 | ||
| JP5778690B2 (en) | 2010-11-22 | 2015-09-16 | Tdk株式会社 | Chip thermistor and thermistor assembly board |
-
1979
- 1979-05-24 JP JP6432279A patent/JPS587044B2/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60149825A (en) * | 1984-01-17 | 1985-08-07 | Osaka Gas Co Ltd | Flame diminishing safety device in burner |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55156301A (en) | 1980-12-05 |
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