JPS5913589B2 - Manufacturing method for products with siliceous film - Google Patents
Manufacturing method for products with siliceous filmInfo
- Publication number
- JPS5913589B2 JPS5913589B2 JP6189379A JP6189379A JPS5913589B2 JP S5913589 B2 JPS5913589 B2 JP S5913589B2 JP 6189379 A JP6189379 A JP 6189379A JP 6189379 A JP6189379 A JP 6189379A JP S5913589 B2 JPS5913589 B2 JP S5913589B2
- Authority
- JP
- Japan
- Prior art keywords
- siliceous film
- siliceous
- film
- aqueous solution
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 13
- 239000007864 aqueous solution Substances 0.000 claims description 39
- 238000011282 treatment Methods 0.000 claims description 29
- 239000000463 material Substances 0.000 claims description 23
- 239000004115 Sodium Silicate Substances 0.000 claims description 22
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 22
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 22
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- 238000000576 coating method Methods 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 18
- PAZHGORSDKKUPI-UHFFFAOYSA-N lithium metasilicate Chemical compound [Li+].[Li+].[O-][Si]([O-])=O PAZHGORSDKKUPI-UHFFFAOYSA-N 0.000 claims description 17
- 229910052912 lithium silicate Inorganic materials 0.000 claims description 17
- 239000000126 substance Substances 0.000 claims description 15
- 239000002253 acid Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 150000003839 salts Chemical class 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 8
- 238000005498 polishing Methods 0.000 claims description 7
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- 229910017604 nitric acid Inorganic materials 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 6
- 239000011260 aqueous acid Substances 0.000 claims description 4
- 229910002651 NO3 Inorganic materials 0.000 claims 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims 1
- 230000002378 acidificating effect Effects 0.000 claims 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 16
- 238000006253 efflorescence Methods 0.000 description 16
- 206010037844 rash Diseases 0.000 description 16
- 239000002585 base Substances 0.000 description 12
- 239000011148 porous material Substances 0.000 description 11
- 238000012360 testing method Methods 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 230000035939 shock Effects 0.000 description 5
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- 238000006297 dehydration reaction Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 3
- 150000007513 acids Chemical class 0.000 description 3
- 239000003513 alkali Substances 0.000 description 3
- 229910052783 alkali metal Inorganic materials 0.000 description 3
- 150000001340 alkali metals Chemical class 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 238000010828 elution Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 235000011007 phosphoric acid Nutrition 0.000 description 3
- 150000004760 silicates Chemical class 0.000 description 3
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 2
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 2
- CSNNHWWHGAXBCP-UHFFFAOYSA-L Magnesium sulfate Chemical compound [Mg+2].[O-][S+2]([O-])([O-])[O-] CSNNHWWHGAXBCP-UHFFFAOYSA-L 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- IWOUKMZUPDVPGQ-UHFFFAOYSA-N barium nitrate Chemical compound [Ba+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O IWOUKMZUPDVPGQ-UHFFFAOYSA-N 0.000 description 2
- ZCCIPPOKBCJFDN-UHFFFAOYSA-N calcium nitrate Chemical compound [Ca+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ZCCIPPOKBCJFDN-UHFFFAOYSA-N 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004455 differential thermal analysis Methods 0.000 description 2
- YIXJRHPUWRPCBB-UHFFFAOYSA-N magnesium nitrate Chemical compound [Mg+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O YIXJRHPUWRPCBB-UHFFFAOYSA-N 0.000 description 2
- 150000002823 nitrates Chemical class 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000012266 salt solution Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 2
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004111 Potassium silicate Substances 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- RAOSIAYCXKBGFE-UHFFFAOYSA-K [Cu+3].[O-]P([O-])([O-])=O Chemical compound [Cu+3].[O-]P([O-])([O-])=O RAOSIAYCXKBGFE-UHFFFAOYSA-K 0.000 description 1
- ILRRQNADMUWWFW-UHFFFAOYSA-K aluminium phosphate Chemical compound O1[Al]2OP1(=O)O2 ILRRQNADMUWWFW-UHFFFAOYSA-K 0.000 description 1
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- YYRMJZQKEFZXMX-UHFFFAOYSA-L calcium bis(dihydrogenphosphate) Chemical compound [Ca+2].OP(O)([O-])=O.OP(O)([O-])=O YYRMJZQKEFZXMX-UHFFFAOYSA-L 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 229910001628 calcium chloride Inorganic materials 0.000 description 1
- 229910000389 calcium phosphate Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000004568 cement Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 150000003840 hydrochlorides Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910000398 iron phosphate Inorganic materials 0.000 description 1
- WBJZTOZJJYAKHQ-UHFFFAOYSA-K iron(3+) phosphate Chemical compound [Fe+3].[O-]P([O-])([O-])=O WBJZTOZJJYAKHQ-UHFFFAOYSA-K 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910001629 magnesium chloride Inorganic materials 0.000 description 1
- 235000011147 magnesium chloride Nutrition 0.000 description 1
- 229910052943 magnesium sulfate Inorganic materials 0.000 description 1
- 235000019341 magnesium sulphate Nutrition 0.000 description 1
- QQFLQYOOQVLGTQ-UHFFFAOYSA-L magnesium;dihydrogen phosphate Chemical compound [Mg+2].OP(O)([O-])=O.OP(O)([O-])=O QQFLQYOOQVLGTQ-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229940035053 monobasic magnesium phosphate Drugs 0.000 description 1
- 235000019691 monocalcium phosphate Nutrition 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 235000019645 odor Nutrition 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229910052913 potassium silicate Inorganic materials 0.000 description 1
- 235000019353 potassium silicate Nutrition 0.000 description 1
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 238000002411 thermogravimetry Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 210000004885 white matter Anatomy 0.000 description 1
- 230000002087 whitening effect Effects 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- -1 zinc monophosphate Chemical class 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- 229960001763 zinc sulfate Drugs 0.000 description 1
- 229910000368 zinc sulfate Inorganic materials 0.000 description 1
- LKCUKVWRIAZXDU-UHFFFAOYSA-L zinc;hydron;phosphate Chemical compound [Zn+2].OP([O-])([O-])=O LKCUKVWRIAZXDU-UHFFFAOYSA-L 0.000 description 1
Landscapes
- Surface Treatment Of Glass (AREA)
Description
【発明の詳細な説明】
この発明はシリカ質皮膜を有する製品の製法に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION This invention relates to a method for manufacturing a product having a siliceous coating.
透明姓に富んだシリカ質皮膜を有する製品は、これまで
金属基材、ガラス基材等の基材の表面に、ケイ酸リチウ
ム、ケイ酸カリウム、ケイ酸ナトリウムのようなケイ酸
塩の水溶液を塗布し乾燥させて塗膜化し、これを焼付け
ることにより基材表面にケイ酸塩にもとづくシリカ質皮
膜を形成して製造されていた。Products with highly transparent siliceous films have been manufactured by applying an aqueous solution of silicates such as lithium silicate, potassium silicate, and sodium silicate to the surface of metal or glass substrates. It was manufactured by coating and drying to form a coating film, which was then baked to form a siliceous film based on silicate on the surface of the substrate.
このようにして得られた製品のシリカ質皮膜は、硬度も
大きく、かつ充分な熱処理を経ることにより耐水件、耐
酸件、耐アルカリ件も大になる。しかしながら、このシ
リカ質皮膜には、多数の小孔(ピンホール)が分布形成
されているのである。これは、熱処理時のケイ酸塩中の
自由水の挙動およびケイ酸塩の脱水反応が充分に把握さ
れていないため、適切に対処できなかつたことに起因す
るものである。このように、従来のシリカ質皮膜を有す
る製品は、シリカ質皮膜に多数の小孔が分布形成されて
いるため、長期間の使用中にその小孔部分の基材が侵食
されたり、小孔により皮膜の透明性が損なわれたりして
いた。また シリカ質皮膜中のアルカリ金属が、大気中
の炭酸ガスや亜儲酸ガスと徐々に反応して水可溶性成分
となつて表面に移行し、そこで乾燥して結晶しエフロレ
ツセンス(白化)を生じたりしていた。このエフロレツ
センスの発生を回避するために、基材にシリカ質皮膜を
形成したのち、これを、硝酸、硫酸、塩酸およびリン酸
等の希薄水溶液中に短時間浸漬し、皮膜中のアルカリ金
属を除去することが行われている。この場合、エフロレ
ツセンスの発生を効果的に防止するためには、これらの
酸の水溶液の濃度を高めるとともに液温を高め、そのな
かにシリカ質皮膜を有する製品を比較的長時間浸漬する
必要がある。しかしながら、このようにすると、シリカ
質皮膜自身が酸の水溶液に溶解するため、シリカ質皮膜
の強度が低下するという問題が生じた。また、酸を使用
すると、臭気等により作業環境が悪化するとともに、公
害等の問題も生じてくるため、それらの対策に莫大な設
備が必要になつていた。この発明者らは、このような問
題を解消するために熱処理時のケイ酸塩中の自由水の挙
動等について詳細に研究を行つた結果、高温におけるケ
イ酸塩の焼付け処理に先立つて100℃未満の温度で予
備乾燥すると、小孔の発生原因となるケイ酸塩中の自由
水が除去されるようになるため、シリ力質皮膜の小孔の
生成が著しく少なくなることを見いだした。The siliceous film of the product thus obtained has high hardness, and when subjected to sufficient heat treatment, has high water resistance, acid resistance, and alkali resistance. However, this siliceous film has a large number of small holes (pinholes) formed in a distributed manner. This is due to the fact that the behavior of free water in silicate during heat treatment and the dehydration reaction of silicate are not fully understood, and therefore, appropriate measures cannot be taken. In this way, conventional products with siliceous coatings have a large number of small pores distributed in the siliceous coating, so during long-term use, the base material in the pores may be eroded or the small pores may erode. As a result, the transparency of the film was impaired. In addition, the alkali metals in the siliceous film gradually react with carbon dioxide and nitrite gas in the atmosphere, becoming water-soluble components and migrating to the surface, where they dry and crystallize, causing efflorescence (whitening). It was happening. In order to avoid the occurrence of this efflorescence, after forming a siliceous film on the base material, this is immersed for a short time in a dilute aqueous solution of nitric acid, sulfuric acid, hydrochloric acid, phosphoric acid, etc., and the alkali metal in the film is removed. is being removed. In this case, in order to effectively prevent the occurrence of efflorescence, it is necessary to increase the concentration of the aqueous solution of these acids, raise the temperature of the solution, and immerse the product with the siliceous film in it for a relatively long time. There is. However, in this case, the siliceous film itself dissolves in the acid aqueous solution, resulting in a problem that the strength of the siliceous film decreases. Furthermore, when acids are used, the working environment deteriorates due to odors and the like, and problems such as pollution arise, so a huge amount of equipment is required to deal with these problems. In order to solve this problem, the inventors conducted detailed research on the behavior of free water in silicate during heat treatment, and found that the temperature of 100℃ prior to the baking treatment of silicate at high temperature. It has been found that pre-drying at a temperature of less than 100 mL causes the free water in the silicate, which causes the formation of pores, to be removed, thereby significantly reducing the formation of pores in the siliceous coating.
そして、さらに研究を重ねた結果、ケイ酸塩として2種
類のケイ酸塩、すなわちケイ酸ナトリウムとケイ酸リチ
ウムを併用するようにし、基材上にケイ酸ナトリウムに
より第1のシリ力質皮膜を形成し、その上にケイ酸リチ
ウムにより第2のシリカ質皮膜を形成するようにすると
、脱アルカリ処理を施すことなくエフロレツセンスの発
生が効果的に防止され、かつシリカ質皮膜全体では優れ
た耐薬品囲および耐衝撃件等が発揮されるようになるこ
とを見いだした。そして、この発明者らは、さらに研究
を重ねた結果、第1のシリカ質皮膜および第2のシリカ
質皮膜のうちの少なくとも一方のシリカ質皮膜に対して
、酸の水溶液および水溶解時に酸けを呈する塩の片方ま
たは双方により脱アルカリ処理を行うと、一層エフロレ
ツセンスの発生が防止され得られた製品を過酷な条件で
使用してもエフロレツセンスが全く発生しなくなること
を見いだしこの発明を完成した。すなわち、この発明は
、下記の一般式(1)(1) Na2O−XSlO2・
YH2O(ただし、Xは0.5以上の正数、YはOまた
は正数)で表わされるケイ酸ナトリウムの水溶液を基材
の表面に塗布し100℃未満の温度で予備乾燥したのち
、さらに高温で焼付処理を行つて第1のシリ力質皮膜を
形成し、この第1のシリカ質皮膜の上に下記の一般式(
)() Ll2O−XSiO2・YH2O
(ただし、XおよびYは一般式(1)と同じ)で表わさ
れるケイ酸リチウムの水溶液を塗布し、100℃未満の
温度で予備乾燥したのち、さらに高温で焼付処理を行つ
て第2のシリカ質皮膜を形成することを第1の要旨とし
、第1のシリカ質皮膜の形成後および第2のシリカ質皮
膜の形成後のうちの少なくとも一方の時期に、形成され
たシリ力質皮膜に対して酸の水溶液および水溶液解時に
酸性を呈する塩の水溶液の少なくとも一方により脱アル
カリ処理を行うことを第2の要旨とするものである。As a result of further research, we decided to use two types of silicates, namely sodium silicate and lithium silicate, and formed a first silicate film on the base material using sodium silicate. By forming a second siliceous film using lithium silicate on it, the occurrence of efflorescence can be effectively prevented without performing alkalization treatment, and the siliceous film as a whole has excellent properties. It has been found that chemical resistance, impact resistance, etc. are improved. As a result of further research, the inventors found that at least one of the first siliceous film and the second siliceous film is free from acid oxidation when dissolved in aqueous acid solution and water. It has been discovered that when dealkalization treatment is performed with one or both of the salts exhibiting the above, the generation of efflorescens can be further prevented, and even if the resulting product is used under harsh conditions, no efflorescens will occur at all. completed. That is, this invention has the following general formula (1) (1) Na2O-XSlO2.
An aqueous solution of sodium silicate represented by YH2O (where X is a positive number of 0.5 or more, and Y is O or a positive number) is applied to the surface of the substrate, pre-dried at a temperature of less than 100°C, and then heated to a higher temperature. A first siliceous film is formed by baking, and the following general formula (
)() Ll2O-XSiO2・YH2O (where X and Y are the same as in general formula (1)) is coated with an aqueous solution of lithium silicate, pre-dried at a temperature below 100°C, and then baked at a higher temperature. The first gist is to perform a treatment to form a second siliceous film, and the formation The second aspect of the present invention is to perform a dealkalization treatment on the siliceous hard coating using at least one of an aqueous solution of an acid and an aqueous solution of a salt that exhibits acidity when dissolved in the aqueous solution.
つぎに、この発明を詳しく説明する。Next, this invention will be explained in detail.
まず、この発明で用いる原材料について説明する。First, the raw materials used in this invention will be explained.
この発明で用いる基材としては、例えば、アルミニウム
板等の金属板、ガラス板、セメント板がトあげられる。Examples of the base material used in this invention include metal plates such as aluminum plates, glass plates, and cement plates.
しかしながら、これに限定されるものではなく、熱処理
時の加熱に耐えうるものであればどのようなものでもよ
い。特に基材としてアルミニウム反射板を用い、これに
、この発明の方法によつて透明性に富んだシリカ質皮膜
を形成す5ると、反射板の鏡面が長期間にわたつて保持
され耐久囲が著しく向上するようになるため極めて有用
である。すなわち、投光器、セード等の照明器具用の反
射板には、従来からアルミニウム材が用いられることが
多いが、これは研磨により容易にQ表面光沢(反射率大
)を出し易く、軽量であり成形も容易である等の理由に
よるものである。この場合、反射面は、化学研磨、電解
研磨を行つたのち、鏡面の保持のためアルマイト処理を
して耐食件、耐候性を付与することが行われていた。と
ころが、それでもなお鏡面が侵されやすかつたのである
。しかしながら、アルミニウム反射板にシリ力質皮膜を
形成すると、その皮膜により反射板の鏡面が半永久的に
保持されるのである。これは、アルミニウムが他の金属
と異なり、ケイ酸塩と反応するため、シリカ質皮膜とア
ルミニウム反射板との密着固定件がよいためと考えられ
る。上記の基材に塗布し焼付けるケイ酸ナトリウムとし
ては、下記の一般式Na2O−XslO2・YH2O
(ただし、Xは0.5以上の正数、YはOまたは正数)
で表わされるケイ酸ナトリウムがあげられ、水溶液状に
して用いられる。However, the material is not limited to this, and any material may be used as long as it can withstand the heat during heat treatment. In particular, when an aluminum reflector is used as a base material and a highly transparent siliceous film is formed on it by the method of the present invention5, the mirror surface of the reflector is maintained for a long period of time and the durability is increased. This is extremely useful as it provides a significant improvement. In other words, aluminum has traditionally been used as a reflector for lighting equipment such as floodlights and shades, but this material can be easily polished to a Q surface gloss (high reflectance), is lightweight, and can be molded easily. This is because it is also easy to use. In this case, the reflective surface was subjected to chemical polishing and electrolytic polishing, and then alumite treatment to maintain the mirror surface to impart corrosion resistance and weather resistance. However, the mirror surface was still susceptible to attack. However, when a silicate film is formed on an aluminum reflector, the mirror surface of the reflector is maintained semi-permanently by the film. This is thought to be due to the fact that, unlike other metals, aluminum reacts with silicates, so that the siliceous film and the aluminum reflector are in close contact with each other. The sodium silicate to be applied and baked on the above base material has the following general formula Na2O-XslO2・YH2O (where X is a positive number of 0.5 or more, and Y is O or a positive number).
Examples include sodium silicate represented by the formula, which is used in the form of an aqueous solution.
ケイ酸ナトリウムは極めて造膜性に富んでおり、特にX
の値が0.5〜3.2程度のものが顕著である。そして
、ケイ酸ナ,トリウムによつて形成された皮膜は、厚さ
が1〜2μ程度迄は相当な熱衝撃(350→25℃への
急激な冷却)を加えても機械的な衝撃を加えてもクラツ
クが入らない優れたものである。しかしながら、その皮
膜は、どのように強く焼付けを施しても、また脱アルカ
リを施してもエフロレツセンスが発生しやすく、かつ耐
薬品性、特に耐アルカリ性に欠けるものである。また、
ケイ酸リチウムとしては、下記の一般式Ll2O−XS
iO2・YH2O(ただし、Xは0.5以上の正数、Y
はOまたは正数)で表わされるケイ酸リチウムがあげら
れ、水溶液状にして用いられる。Sodium silicate has extremely good film-forming properties, especially
The values of about 0.5 to 3.2 are remarkable. The film formed from sodium silicate and thorium silicate, up to a thickness of about 1 to 2 microns, is not susceptible to mechanical shock even when subjected to considerable thermal shock (rapid cooling from 350 to 25 degrees Celsius). It is an excellent product that does not cause any cracks. However, no matter how strongly the film is baked or dealkalized, efflorescence is likely to occur and the film lacks chemical resistance, particularly alkali resistance. Also,
As lithium silicate, the following general formula Ll2O-XS
iO2・YH2O (X is a positive number of 0.5 or more, Y
Lithium silicate is represented by O or a positive number) and is used in the form of an aqueous solution.
ケイ酸リチウムは、ケイ酸ナトリウムに比べれば造膜性
に欠けるが、Xの値が0.5〜3.5程度のものは厚さ
1〜2μの皮膜を充分に形成しうるものである。しかし
、Xの値が7.5以上になると造膜件に大きく欠けるよ
うになる。このように、−ケイ酸リチウムは、ケイ酸ナ
トリウムに比べて造膜性にはやや欠けるが、それによつ
て形成された皮膜は、耐薬品性に極めて富んでいるので
ある。すなわち、200℃以上の温度で0.5分間以上
の焼付け処理を施して形成された皮膜は、厚さが1μ程
度でも耐酸性(10%HCl中室温下60分)および耐
アルカリ性(10%NaOH中室温下60分)に富んで
いるのである。そして、ケイ酸リチウムによつて形成さ
れた皮膜は、エフロレツセンスの発生も極めて少ないの
であり、200℃以上の焼付けを経て形成された皮膜は
、脱アルカリ処理を経なくても炭酸ガス、亜硫酸ガス雰
囲気下において変化しないものである。このように、ケ
イ酸リチウムによつて形成された皮膜は、耐薬品性、耐
エフロレツセンス囲に富んでいるものの耐衝撃件等はケ
イ酸ナトリウム程ではないのである。そこで、この発明
は、ケイ酸ナトリウムとケイ酸リチウムの欠点を相互に
補い合わせるために、まず、造膜件に富み、かつ耐衝撃
性に富んだ皮膜を形成しうるケイ酸ナトリウムの水溶液
を基材に塗布し焼付けて皮膜を形成させ、その上に耐薬
品件、耐エフロエツセンス件に富んだ皮膜を形成しうる
ケイ酸リチウムの水溶液を塗布して焼付けるようにした
ものである。Although lithium silicate lacks film-forming properties compared to sodium silicate, those with an X value of about 0.5 to 3.5 can sufficiently form a film with a thickness of 1 to 2 μm. However, when the value of As described above, although lithium silicate has somewhat less film-forming properties than sodium silicate, the film formed with it has extremely high chemical resistance. In other words, the film formed by baking for 0.5 minutes or more at a temperature of 200°C or higher has acid resistance (60 minutes at room temperature in 10% HCl) and alkali resistance (10% NaOH) even if it has a thickness of about 1 μm. 60 minutes at medium room temperature). Furthermore, the film formed with lithium silicate has extremely low occurrence of efflorescence, and the film formed through baking at 200°C or higher can release carbon dioxide and sulfur dioxide even without dealkalization treatment. It does not change in a gas atmosphere. Thus, although the film formed from lithium silicate has high chemical resistance and efflorescence resistance, its impact resistance is not as good as that of sodium silicate. Therefore, in order to mutually compensate for the drawbacks of sodium silicate and lithium silicate, the present invention first developed an aqueous solution of sodium silicate that can form a film with rich film-forming property and high impact resistance. It is applied to a material and baked to form a film, and then an aqueous solution of lithium silicate, which can form a film with high chemical and effrochemical resistance, is applied and baked.
メrイ酸ナトリウムおよびケイ酸リチウムの水溶液は、
それぞれ濃度が1〜30重量%(以下「?」と略す)の
範囲に選ばれていることが好ましい。An aqueous solution of sodium merate and lithium silicate is
It is preferable that the concentration of each is selected in the range of 1 to 30% by weight (hereinafter abbreviated as "?").
すなわち、濃度が30%を超えると粘度が高くなるため
、塗布作業が困難になるとともに、生成皮膜の膜厚が大
きくなるため焼付けの際にクラツクが入つたり発泡した
りしやすくなる。特に、基材がアルミニウムからなると
きには、基材の腐食が起こりやすくなる。また、逆に濃
度が1%未満では、効果が充分に発揮されにくくなるの
である。つぎに、上記の原材料を用い、この発明の方法
によつてシリカ質皮膜を有する製品を製造する例につい
て説明する。まず、ケイ酸ナトリウムの水溶液を基材に
塗布する。塗布の方法は限定しない。例えば吹き付け、
はけ塗りや、基材をケイ酸ナトリウムの水溶液中に浸漬
することが行われる。つぎに、ケイ酸ナトリウムの水溶
液が塗布された基材を風乾したのち、100℃未満の温
度で予備乾燥する。この予備乾燥は、ケイ酸ナトリウム
塗膜中の自由水を除去し、後で行われる高温における焼
付けの際の発泡を防止するために行うものである。通常
、この予備乾燥は、50℃以上100℃未満の温度範囲
内において0.5〜30分間行われる。つぎに、ケイ酸
ナトリウム塗膜を高温で焼付け処理して第1のシリカ質
皮膜化する。That is, if the concentration exceeds 30%, the viscosity becomes high, which makes coating work difficult, and the resulting film becomes thicker, making it more likely to crack or foam during baking. In particular, when the base material is made of aluminum, corrosion of the base material is likely to occur. On the other hand, if the concentration is less than 1%, it will be difficult to fully exhibit the effect. Next, an example of manufacturing a product having a siliceous film by the method of the present invention using the above raw materials will be described. First, an aqueous solution of sodium silicate is applied to the substrate. The method of application is not limited. For example, spraying
Brushing or dipping the substrate into an aqueous solution of sodium silicate is performed. Next, the substrate coated with the aqueous solution of sodium silicate is air-dried and then pre-dried at a temperature below 100°C. This pre-drying is performed to remove free water in the sodium silicate coating and to prevent foaming during subsequent baking at high temperatures. Usually, this preliminary drying is performed for 0.5 to 30 minutes within a temperature range of 50°C or higher and lower than 100°C. Next, the sodium silicate coating is baked at a high temperature to form a first siliceous coating.
この場合、焼付けを2段階に分け、比較的低温(100
〜200℃)で1次焼付けし、引続いて高温(200℃
を超え400℃以下)で2次焼付けするようにするとシ
リカ質皮膜に対する小孔の形成が一層防止されるように
なるのである。すなわち、この発明者らは、シリカ質皮
膜に多数の小孔が分布形成される原因について研磨を重
ねた結果、その原因ノは乾燥時のケイ酸塩中の自由水の
不完全な除去と、熱処理時のケイ酸塩の脱水反応を充分
に把握せず、不適正な条件で熱処理を行うこととにある
ことを見いだしたのである。In this case, the baking is divided into two stages and is performed at a relatively low temperature (100
-200℃), followed by high temperature baking (200℃).
If the secondary baking is carried out at a temperature exceeding 400°C or less, the formation of small pores in the siliceous film can be further prevented. In other words, as a result of repeated polishing, the inventors found that the cause of the formation of a large number of small pores in a siliceous film was that the cause was incomplete removal of free water in the silicate during drying, They discovered that the problem lies in the fact that the dehydration reaction of silicate during heat treatment was not fully understood and the heat treatment was performed under inappropriate conditions.
そこで、この発明者らは、熱処理時のケイ酸塩の脱水反
応について、示差熱分析(DTA)および熱重量分析(
TGA)によつて詳細に研究を行つた結果、100〜2
00℃の間でシリカ質皮膜の小孔(ピンホール)の生成
原因となる反応(脱水反応と思われる)が激しく起きる
ため、この温度範囲でケイ酸塩を熱処理(1次焼付け)
して充分脱水反応を行わせたのち、さらに温度を高めて
200℃を超え400℃以下の温度で熱処理(2次焼付
け)するシリカ質皮膜の小孔の生成が著しく少なくなる
ことを見いだしたのである。この1次焼付けは、0.5
〜30分程度行なうことが効果の点から好ましい。1次
焼付け後に行う2次焼付けは、200℃を超え400℃
以下の温度で行うことが好ましい。Therefore, the inventors investigated the dehydration reaction of silicate during heat treatment using differential thermal analysis (DTA) and thermogravimetric analysis (
As a result of detailed research by TGA), 100-2
Because the reaction that causes the formation of pinholes in the siliceous film (probably a dehydration reaction) occurs violently between 00℃ and 00℃, the silicate is heat-treated (primary baking) in this temperature range.
We found that the formation of small pores in the siliceous film was significantly reduced when the temperature was further increased to a temperature exceeding 200°C and below 400°C (secondary baking). be. This primary baking is 0.5
From the viewpoint of effectiveness, it is preferable to carry out the treatment for about 30 minutes. The secondary baking performed after the first baking is at a temperature exceeding 200℃ and 400℃.
It is preferable to carry out the reaction at the following temperature.
この2次焼付けは、シリカの皮膜を強固にする目的のた
めに行うものであり、焼付時間は経済性等を考慮して通
常0.5〜30分に選ばれる。つぎに、このようにして
形成された第1のシリ力質皮膜の上にケイ酸リチウムの
水溶液を塗布し、ケイ酸ナトリウム水溶液の塗布から焼
付け処理までの一連の処理と同様の処理を施すことによ
り第2のシリカ質皮膜を形成する。This secondary baking is performed for the purpose of strengthening the silica film, and the baking time is usually selected from 0.5 to 30 minutes in consideration of economical efficiency and the like. Next, an aqueous solution of lithium silicate is applied on the first silicate film thus formed, and a series of treatments from application of the aqueous sodium silicate solution to baking treatment are performed. A second siliceous film is formed.
なお、第1および第2のシリカ質皮膜の膜厚はそれぞれ
0.1〜2μに設定することが効果の点から好ましいの
である。このようにして、脱アルカリ処理を要さず、透
明件に富み、小孔(ピンホール)が形成されていず、か
つ耐エフロレツセンス件、耐薬品件、耐衝撃性に富んだ
シリカ質皮膜を有する製品が得られるのである。すなわ
ち、この製品のシリカ質皮膜は、高温における暁付け処
理に先立つて100℃未満の温度で予備乾燥(小孔の形
成原因となるケイ酸塩中の自由水の除去を目的とする)
されているため、小孔の分布形成が防止されているので
ある。そして、シリカ質皮膜が2層になつていて、表面
側が耐薬品件、耐エフロレツセンス件に富んだ(耐衝撃
性、耐熱衝撃性にやや欠ける)第2のシリカ質皮膜(ケ
イ酸リチウムにより形成)からなり、基材側が耐衝撃健
、耐熱衝撃性に富んだ(耐薬品け、耐エフロレツセンス
件に欠ける)第1のシリカ質皮膜(ケイ酸ナトリウムに
より形(代)からなつているため、第1および第2のシ
リカ質皮膜の欠点が相互に補い合わされていてシリカ質
皮膜全体として耐薬品ヒ、耐エフロレツセンス件、耐衝
撃曲および耐熱衝撃性に富むようになるのである。その
ため、従来のように脱アルカリ処理して皮膜の耐エフロ
レツセンスlを向上させなくてもよいのである。なお、
特に必要がある場合には、上記の一連の工程を繰返し行
つてもよいのである。なお、シリカ質皮膜のエフロレツ
センスの発生を一層防止するために、必要に応じて第1
のシリ力質皮膜および第2のシリカ質皮膜のうちの少な
くとも一方のシリカ質皮膜に対して脱アルカリ処理を施
す、すなわち脱アルカリ処理を施すときは第1のシリカ
質皮膜に対しては脱アルカリ処理を施し、および/また
は第2のシリカ質皮膜に対して脱アルカリ処理を施す、
ことが行われる。この脱アルカリ処理には、酸の水溶液
または水溶解時に酸囲を呈する塩の水溶液または両者の
混合水溶液が用いられる。このとき用いられる酸として
は、HNO3,H3PO4,H2SO4,HCl,I]
3B03,H2C03および有機酸等があげられる。効
果の点からすればHNO3を用いることが好ましい。ま
た、水溶解時に酸件を呈する塩としては、硝酸アルミニ
ウム、硝酸マグネシウム、硝酸カルシウム、硝酸亜鉛、
硝酸バリウム等の硝酸塩、硫酸アルミニウム、硫酸マグ
ネシウム、硫酸カルシウム、硫酸亜鉛等の硫酸塩、第一
リン酸アルミニウム、第一リン酸カルシウム、第一リン
酸マグネシウム、第一リン酸鉄、第一リン酸銅、第一リ
ン酸亜鉛等のリン酸塩および塩化カルシウム、塩化アル
ミニウム、塩化マグネシウム、塩化アンモニウム、塩化
亜鉛等の塩酸塩があげられる。効果の点からすれば硝酸
塩を用いることが好ましく、硝酸アルミニウムを用いる
ことが特に好ましい。この脱アルカリ処理は、上記の酸
の水溶液または上記の塩の水溶液または両者の混合水溶
液をシリカ質皮膜に対してスプレイしたり、シリカ質皮
膜を有する製品を上記の水溶液中に浸漬すること等によ
り行われる。この場合、上記の水溶液は、処理剤の種類
によつても異なるが、濃度を1〜20%に設定すること
が好ましい。そして、処理時間は、処理剤の種類や水溶
液の濃度によつても異なるが、0.5〜30分間に設定
することが好ましい。特に、酸の水溶液を用いて脱アル
カリ処理するよりも、水溶解時に酸lを呈する塩の水溶
液を用いて脱アルカリ処理する方が好ましい。これは次
の理由による。すなわち、酸の水溶液による場合でも塩
の水溶液による場合でも、脱アルカリ処理によつてシリ
カ質皮膜からアルカリ金属が溶出し、その溶出跡が形成
されるのであるが、塩の水溶液を用いて脱アルカリ処理
すると、溶出跡が生ずるにつれて塩の水溶液から塩の金
属イオン等陽イオンが入り込んでその溶出跡を埋めるた
め、シリカ質皮膜の表面状態を損なうことが少ないので
ある。そして、通常は、このような脱アルカリ処理を行
つたのちに、水洗を行い、皮膜中に脱アルカリ処理剤が
残留しないようにすることが行われる。このような脱ア
ルカリ処理を施すことにより、一層エフロレツセンスの
発生が防止されるようになるため、得られた製品を過酷
な条件で使用してもエフロレツセンスが全く発生しなく
なるのである。つぎに、実施例について比較例と併せて
説明する。In addition, from the viewpoint of effectiveness, it is preferable that the thicknesses of the first and second siliceous films are each set to 0.1 to 2 .mu.m. In this way, a siliceous film that does not require dealkalization treatment, is highly transparent, has no pinholes, and is highly resistant to efflorescence, chemicals, and impact. This results in a product having the following characteristics. That is, the siliceous coating of this product is pre-dried at a temperature below 100°C (to remove the free water in the silicate that causes pore formation) prior to the high-temperature dawning process.
This prevents the formation of small pore distribution. The siliceous film has two layers, and the surface side is a second siliceous film (with lithium silicate that is rich in chemical resistance and efflorescence resistance (slightly lacking in impact resistance and thermal shock resistance)). The base material side is made of a first siliceous film (formed by sodium silicate) which is highly impact resistant and thermal shock resistant (lacking chemical and efflorescence resistance). Therefore, the shortcomings of the first and second siliceous films are compensated for each other, and the siliceous film as a whole has excellent chemical resistance, efflorescence resistance, impact bending resistance, and thermal shock resistance. , there is no need to improve the efflorescence resistance of the film by dealkalization treatment as in the past.
If particularly necessary, the above series of steps may be repeated. In addition, in order to further prevent the occurrence of efflorescence in the siliceous film, the first
At least one of the siliceous coating and the second siliceous coating is subjected to dealkalization treatment, that is, when dealkalization treatment is performed, the first siliceous coating is dealkalized. and/or subjecting the second siliceous film to a dealkalization treatment.
things are done. In this dealkalization treatment, an aqueous solution of an acid, an aqueous solution of a salt that exhibits an acid periphery when dissolved in water, or a mixed aqueous solution of both is used. The acids used at this time include HNO3, H3PO4, H2SO4, HCl, I]
Examples include 3B03, H2C03 and organic acids. From the viewpoint of effectiveness, it is preferable to use HNO3. Salts that exhibit acidity when dissolved in water include aluminum nitrate, magnesium nitrate, calcium nitrate, zinc nitrate,
Nitrates such as barium nitrate, sulfates such as aluminum sulfate, magnesium sulfate, calcium sulfate, zinc sulfate, monobasic aluminum phosphate, monobasic calcium phosphate, monobasic magnesium phosphate, monobasic iron phosphate, monobasic copper phosphate, Examples include phosphates such as zinc monophosphate, and hydrochlorides such as calcium chloride, aluminum chloride, magnesium chloride, ammonium chloride, and zinc chloride. From the viewpoint of effectiveness, it is preferable to use nitrates, and it is particularly preferable to use aluminum nitrate. This dealkalization treatment is carried out by spraying the siliceous film with an aqueous solution of the above acid, an aqueous solution of the above salt, or a mixed aqueous solution of both, or by immersing the product having the siliceous film in the above aqueous solution. It will be done. In this case, the concentration of the above aqueous solution is preferably set to 1 to 20%, although it varies depending on the type of processing agent. Although the treatment time varies depending on the type of treatment agent and the concentration of the aqueous solution, it is preferably set to 0.5 to 30 minutes. In particular, it is more preferable to dealkalize using an aqueous solution of a salt that exhibits acid 1 when dissolved in water than to dealkalize using an aqueous acid solution. This is due to the following reason. In other words, whether using an aqueous acid solution or an aqueous salt solution, the alkali metal is eluted from the siliceous film by dealkalization, and a trace of the elution is formed. When treated, as elution traces are formed, cations such as metal ions of the salt enter from the aqueous salt solution and fill in the elution traces, so that the surface condition of the siliceous film is less likely to be damaged. After performing such a dealkalization treatment, washing with water is usually performed to prevent the dealkalization treatment agent from remaining in the film. By performing such a dealkalization treatment, the generation of efflorescence is further prevented, so that even if the obtained product is used under harsh conditions, no efflorescence will occur at all. Next, examples will be described together with comparative examples.
実施例,比較例 基材としてアルミニウム基材を準備した。Examples, comparative examples An aluminum base material was prepared as a base material.
このアルミニウム基材は、JISに規定された高純度ア
ルミニウム板(住友軽金属社製、AlO7OPlAl純
度97%以上、100×100×1mm)をハブ研磨し
たのち、中件洗剤で脱アルカリ処理して化学研磨浴(リ
ン酸80容量?、酢酸5容量?、硝酸15容量?、液温
100℃)に30秒間浸漬し、ついで水洗したのち、1
0容量%HNO3中に浸漬し、さらに水洗し鏡面化した
ものである。この基材を用い、後記の第1表に示すよう
に、基材表面に同様に示すケイ酸塩水溶液を同表に示す
量だけ塗布し、同表に示すように熱処理したのち、必要
に応じて脱アルカリ処理してシリカ質皮膜を有する製品
を得た。つぎに、上記のようにして得られたシリカ質皮
膜を有する製品のシリカ質皮膜の件能を調べた。This aluminum base material is a high-purity aluminum plate specified by JIS (manufactured by Sumitomo Light Metal Co., Ltd., AlO7OPlAl purity of 97% or more, 100 x 100 x 1 mm), which is hub-polished and then chemically polished by dealkalization treatment with a neutral detergent. After immersing in a bath (phosphoric acid 80 volumes, acetic acid 5 volumes, nitric acid 15 volumes, liquid temperature 100°C) for 30 seconds, and then rinsing with water,
It was immersed in 0% by volume HNO3 and then washed with water to give it a mirror finish. Using this base material, as shown in Table 1 below, apply the silicate aqueous solution shown in the same manner to the surface of the base material in the amount shown in the same table, heat treat as shown in the same table, and then apply as necessary. A product with a siliceous film was obtained by dealkalization treatment. Next, the performance of the siliceous coating of the product having the siliceous coating obtained as described above was investigated.
その結果は第2表のとおりであつた。第2表から明らか
なように、実施例により得られた製品のシリカ質皮膜の
性能は、実施例7のもののシリカ質皮膜に耐薬品件試験
でピンホール部にやや浸食が見られる以外は、極めて良
好であることがわかる。これに対して比較例で得られた
製品のシリカ質皮膜はエフロレツセンスが発生したり、
耐薬品件が悪かつたり、小孔が分布形成されたりしてい
て、いずれも満足できるものではないことがわかる。な
お、第2表の性能評価方法は、つぎのようにして行つた
。(1)外観;顕微鏡(×100)にてクラツクの有無
をチエツクした。The results were as shown in Table 2. As is clear from Table 2, the performance of the siliceous film of the product obtained in Example 7 was as follows, except that the siliceous film of Example 7 showed slight erosion in the pinhole area in the chemical resistance test. It can be seen that the results are extremely good. On the other hand, the siliceous film of the product obtained in the comparative example caused efflorescence and
It can be seen that the chemical resistance is poor and the small pores are distributed, both of which are unsatisfactory. The performance evaluation method shown in Table 2 was performed as follows. (1) Appearance: The presence or absence of cracks was checked using a microscope (×100).
色は目視にて観察した。(2)耐薬品性;10』CIお
よび10%NaOHの水溶液にそれぞれ濾紙(10mm
X10龍)を3枚重ねて浸し、これを試験品の表面に置
いて時計皿で覆い、室温で30分間放置したのち、水洗
し、変色、腐食の有無をルーペ(×25)で観察した。
(3) SO2ガステスト;デシケータ底部に1c1n
の深さに水を張り、そこへ試験品を入れ、ついでデシケ
ータ内に4,000PF0)SO2ガスを充満させて完
全密閉状態にし、その状態で室温においいて48時間放
置(この時、デシケータ内部は、室温での飽和水蒸気と
4,000PP[11(7)SO2ガスとの混合ガスに
よつて満たされている)した。Color was visually observed. (2) Chemical resistance; 10% CI and 10% NaOH aqueous solutions with filter paper (10mm
Three sheets of X10 Dragon) were soaked in layers, placed on the surface of the test item, covered with a watch glass, left for 30 minutes at room temperature, washed with water, and observed with a magnifying glass (x25) for discoloration and corrosion.
(3) SO2 gas test; 1c1n at the bottom of the desiccator
Fill the desiccator with water to a depth of , filled with a mixture of saturated steam and 4,000 PP [11(7) SO2 gas] at room temperature.
その後、試験品を取り出し、100〜130。Cのオー
プン中に投入して乾燥させたのち、白化物(エフロレツ
センス)の発生の有無をルーペ(X25)で調べた。(
4)塩水噴霧試験およびウエザオメータ一試験JISに
もとづく方法で、塩水噴霧試1験は10サイクル、ウエ
ザオメータ一試験は150時間行つた。After that, take out the test item and test it at 100-130. After putting it into the open chamber and drying it, it was examined with a magnifying glass (X25) for the presence or absence of white matter (efflorescens). (
4) Salt water spray test and weather-o-meter test The salt-water spray test was conducted for 10 cycles and the weather-o-meter test was conducted for 150 hours according to the method based on JIS.
(5)膜厚測定;パーマスコープEWD8(フイツシヤ
一社製(西独)で測定した。(5) Film thickness measurement: Measured with Permascope EWD8 (manufactured by Fissia Ichigo Co., Ltd. (West Germany)).
Claims (1)
し、Xは0.5以上の正数、Yは0または正数)で表わ
されるケイ酸ナトリウムの水溶液を基材の表面に塗布し
100℃未満の温度で予備乾燥したのち、さらに高温で
焼付処理を行つて第1のシリカ質皮膜を形成し、この第
1のシリカ質皮膜の上に下記の一般式(II)(II)Li
_2O・XSiO_2・YH_2O(ただし、Xおよび
Yは一般式( I )と同じ)で表わされるケイ酸リチウ
ムの水溶液を塗布し、100℃未満の温度で予備乾燥し
たのち、さらに高温で焼付処理を行つて第2のシリカ質
皮膜を形成することを特徴とするシリカ質皮膜を有する
製品の製法。 2 第1および第2のシリカ質皮膜の形成の際に行われ
る高温での焼付処理を、100℃〜200℃の温度で1
次焼付けし、ついで200℃を超え400℃以下の温度
で2次焼付けすることにより行う特許請求の範囲第1項
記載のシリカ質皮膜を有する製品の製法。 3 予備乾燥の所要時間が0.5〜30分の範囲内に選
ばれるとともに、1次焼付けおよび2次焼付けの所要時
間がそれぞれ0.5〜30分の範囲内に選ばれている特
許請求の範囲第2項記載のシリカ質皮膜を有する製品の
製法。 4 基材が、アルミニウム板に脱脂処理したのち化学研
磨処理または電解研磨処理し反射率85%以上の鏡面を
形成したアルミニウム基板である特許請求の範囲第1項
ないし第3項のいずれかに記載のシリカ質皮膜を有する
製品の製法。 5 下記の一般式( I ) ( I )Na_2O・XSiO_2・YH_2O(ただ
し、Xは0.5以上の正数、Yは0または正数)で表わ
されるケイ酸ナトリウムの水溶液を基材の表面に塗布し
100℃未満の温度で予備乾燥したのち、さらに高温で
焼付処理を行つて第1のシリカ質皮膜を形成し、この第
1のシリカ質皮膜の上に下記の一般式(II)(II)Li
2_O・XSiO_2・YH_2O(ただし、Xおよび
Yは一般式( I )と同じ)で表わされるケイ酸リチウ
ムの水溶液を塗布し、100℃未満の温度で予備乾燥し
たのち、さらに高温で焼付処理を行つて第2のシリカ質
皮膜を形成することによりシリカ質皮膜を有する製品を
製造する方法であつて、第1のシリカ質皮膜の形成後お
よび第2のシリカ質皮膜の形成像のうちの少なくとも一
方の時期に、形成されたシリカ質皮膜に対して酸の水溶
液および水溶解時に酸性を呈する塩の水溶液の少なくと
も一方により脱アルカリ処理を行うことを特徴とするシ
リカ質皮膜を有する製品の製法。 6 第1および第2のシリカ質皮膜の形成の際に行なわ
れる高温での焼付処理を、100℃〜200℃の温度で
1次焼付けし、ついで200℃を超え400℃以下の温
度で2次焼付けすることにより行う特許請求の範囲第5
項記載のシリカ質皮膜を有する製品の製法。 7 予備乾燥の所要時間が0.5〜30分の範囲内に選
ばれるとともに、1次焼付けおよび2次焼付けの所要時
間がそれぞれ0.5〜30分の範囲内に選ばれている特
許請求の範囲第6項記載のシリカ質皮膜を有する製品の
製法。 8 基材が、アルミニウム板に脱脂処理したのち化学研
磨処理または電解研磨処理し反射率85%以上の鏡面を
形成したアルミニウム基板である特許請求の範囲第5項
ないし第7項のいずれかに記載のシリカ質皮膜を有する
製品の製法。 9 脱アルカリ処理用の酸の水溶液が硝酸の水溶液であ
り、水溶解時に酸性を呈する塩の水溶液が硝酸塩の水溶
液である特許請求の範囲第5項ないし第8項のいずれか
に記載のシリカ質皮膜を有する製品の製法。[Claims] 1 An aqueous solution of sodium silicate represented by the following general formula (I) (I) Na_2O・XSiO_2・YH_2O (wherein, X is a positive number of 0.5 or more, and Y is 0 or a positive number) is applied to the surface of the base material and pre-dried at a temperature of less than 100°C, and then baked at a higher temperature to form a first siliceous film, and the following general coating is applied on this first siliceous film. Formula (II) (II) Li
An aqueous solution of lithium silicate represented by _2O. 1. A method for producing a product having a siliceous film, the method comprising: forming a second siliceous film. 2 The high-temperature baking treatment performed during the formation of the first and second siliceous films was performed at a temperature of 100°C to 200°C.
A method for manufacturing a product having a siliceous film according to claim 1, which is performed by performing secondary baking and then secondary baking at a temperature of more than 200°C and less than 400°C. 3 The time required for preliminary drying is selected within the range of 0.5 to 30 minutes, and the time required for primary baking and secondary baking are each selected within the range of 0.5 to 30 minutes. A method for manufacturing a product having a siliceous film according to Scope 2. 4. According to any one of claims 1 to 3, the base material is an aluminum substrate that has been degreased and then subjected to chemical polishing or electrolytic polishing to form a mirror surface with a reflectance of 85% or more. A method for producing a product with a siliceous film. 5 An aqueous solution of sodium silicate represented by the following general formula (I) (I) Na_2O・XSiO_2・YH_2O (where X is a positive number of 0.5 or more, Y is 0 or a positive number) is applied to the surface of the base material. After coating and pre-drying at a temperature of less than 100°C, a baking treatment is performed at a higher temperature to form a first siliceous film, and on this first siliceous film, the following general formula (II) (II) is applied. )Li
An aqueous solution of lithium silicate represented by 2_O・XSiO_2・YH_2O (where X and Y are the same as in general formula (I)) is applied, pre-dried at a temperature below 100°C, and then baked at a higher temperature. A method for producing a product having a siliceous film by forming a second siliceous film, the method comprising: after the formation of the first siliceous film; and at least one of the formed image of the second siliceous film. A method for producing a product having a siliceous film, characterized in that the formed siliceous film is subjected to dealkalization treatment with at least one of an aqueous acid solution and an aqueous solution of a salt that exhibits acidity when dissolved in water. 6 The high-temperature baking treatment performed during the formation of the first and second siliceous films includes primary baking at a temperature of 100°C to 200°C, followed by secondary baking at a temperature exceeding 200°C and below 400°C. Claim No. 5 carried out by baking
A method for manufacturing a product having a siliceous film as described in Section 1. 7 The time required for pre-drying is selected within the range of 0.5 to 30 minutes, and the time required for primary baking and secondary baking are each selected within the range of 0.5 to 30 minutes. A method for manufacturing a product having a siliceous film as described in Scope 6. 8. According to any one of claims 5 to 7, the base material is an aluminum substrate that has been degreased and then subjected to chemical polishing or electrolytic polishing to form a mirror surface with a reflectance of 85% or more. A method for producing a product with a siliceous film. 9. The siliceous material according to any one of claims 5 to 8, wherein the aqueous solution of acid for dealkalization treatment is an aqueous solution of nitric acid, and the aqueous solution of a salt that becomes acidic when dissolved in water is an aqueous solution of nitrate. A method for manufacturing products with a film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6189379A JPS5913589B2 (en) | 1979-05-18 | 1979-05-18 | Manufacturing method for products with siliceous film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6189379A JPS5913589B2 (en) | 1979-05-18 | 1979-05-18 | Manufacturing method for products with siliceous film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55154576A JPS55154576A (en) | 1980-12-02 |
| JPS5913589B2 true JPS5913589B2 (en) | 1984-03-30 |
Family
ID=13184270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6189379A Expired JPS5913589B2 (en) | 1979-05-18 | 1979-05-18 | Manufacturing method for products with siliceous film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5913589B2 (en) |
-
1979
- 1979-05-18 JP JP6189379A patent/JPS5913589B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55154576A (en) | 1980-12-02 |
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