JPS5915501B2 - Optical coupling semiconductor device - Google Patents
Optical coupling semiconductor deviceInfo
- Publication number
- JPS5915501B2 JPS5915501B2 JP55141736A JP14173680A JPS5915501B2 JP S5915501 B2 JPS5915501 B2 JP S5915501B2 JP 55141736 A JP55141736 A JP 55141736A JP 14173680 A JP14173680 A JP 14173680A JP S5915501 B2 JPS5915501 B2 JP S5915501B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- thin film
- insulating thin
- transparent resin
- transmission path
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Bipolar Transistors (AREA)
Description
【発明の詳細な説明】
この発明は、例えば高耐圧のスイッチング素子、あるい
は電圧の異なる回路相互の結合等に使用される光結合半
導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an optically coupled semiconductor device used, for example, as a high-voltage switching element or for coupling circuits with different voltages.
５−般に、光結合半導体装置（以下、フォトカプラと呼
ぶ）は第１図に示すように構成されている。5- Generally, an optically coupled semiconductor device (hereinafter referred to as a photocoupler) is constructed as shown in FIG.
すなわち、半導体発光素子１１に対向して半導体受光素
子１２が設けられ、この間に高純度シリコン等の透明樹
脂で光伝達路１３が形成される。そ１０して、前記発光
素子１１、および受光素子１２、光伝達路１３を包み込
むように黒色エポキシ等の不透明樹脂で外囲器１４が形
成される。さらに、半導体発光素子１１はリード１５に
よつて入力側回路１６に接続され、半導体受光素子１２
はりー１５ドＩＴによつて出力側回路１８に接続される
。このような構成のフォトカプラにおいては、透明樹脂
の光伝達路１３と不透明樹脂の外囲器１４との密着力が
弱いため、使用時の温度サイクル等により、各樹脂の熱
膨張係数の違いから両者の界フ０ 面に幅数１０μｍ〜
数１００μｍ程度の間隙１９を生ずることがある。とこ
ろで、フォトカプラに要求される主要な特性の一つとし
て、入出力間絶縁耐圧が高いことがあげられる。That is, a semiconductor light receiving element 12 is provided opposite to a semiconductor light emitting element 11, and a light transmission path 13 is formed between the semiconductor light receiving element 12 and a transparent resin such as high purity silicon. Then, an envelope 14 is formed of an opaque resin such as black epoxy so as to enclose the light emitting element 11, the light receiving element 12, and the light transmission path 13. Further, the semiconductor light emitting device 11 is connected to the input side circuit 16 via a lead 15, and the semiconductor light receiving device 12
It is connected to the output side circuit 18 by a hardware 15D IT. In a photocoupler with such a configuration, the adhesion between the optical transmission path 13 made of transparent resin and the envelope 14 made of opaque resin is weak. The interface between the two has a width of several tens of μm on the 0 plane.
A gap 19 of about several 100 μm may occur. Incidentally, one of the main characteristics required of a photocoupler is high dielectric strength between input and output.
これはフォトカプラの入力側端子とシ５ 出力側端子と
の間に高電圧、例えば交流２．５ＫＶｒｍｓを印加した
時の絶縁耐圧をいうもので、フォトカプラは通常入出力
回路が光で結合されるため絶縁耐圧が高い。しかし、フ
ォトカプラ内部に前記のような間隙が存在すると、高電
圧印加時に■０ この間隙に沿つた放電現象が起こり、
入出力間絶縁耐圧を著しく損なつてしまう。この放電現
象を抑制、あるいは軽減する手段として、間隙の沿面距
離を長くするのが効果的である。This refers to the withstand voltage when a high voltage, for example AC 2.5 KVrms, is applied between the input side terminal and the output side terminal of the photocoupler. Therefore, the insulation voltage is high. However, if such a gap exists inside the photocoupler, a discharge phenomenon occurs along this gap when high voltage is applied.
The insulation voltage between input and output will be significantly impaired. As a means to suppress or reduce this discharge phenomenon, it is effective to increase the creepage distance of the gap.
そこで、従来第２図に示すように、半導体発３５光素子
１１と半導体受光素子１２との間に、厚さ数μｍ〜数１
００Ｉｔｍ程度の透明絶縁性薄膜２０を設けている。こ
の透明絶縁性薄膜２０は、ポリイミド・フイルム、ＦＥ
Ｐ（四フツ化エチレン一六フツ化エチレン共重合体）フ
イルム、あるいはポリイミド・フイルムにＦＥＰをコー
テイングしたもの等で形成されるもので、前記絶縁性薄
膜２０の両側に高純度シリコン等で光伝達路１３ａ，１
３ｂが形成される。さらに、この素子全体を包み込むよ
うに黒色エポキシ等で外囲器１４が形成される。上述し
たような構成として、前記透明絶縁性薄膜２０の大きさ
を適切に選ぶことにより、光伝達路１３ａ，１３ｂと外
囲器１４との界面の間隙１９の沿面距離を、絶縁性薄膜
２０の端部にそつて長くすることが可能である。Therefore, conventionally, as shown in FIG.
A transparent insulating thin film 20 of about 00 Itm is provided. This transparent insulating thin film 20 is made of polyimide film, FE
It is formed of P (tetrafluoroethylene-16-fluoroethylene copolymer) film or polyimide film coated with FEP, etc., and high-purity silicon or the like is used on both sides of the insulating thin film 20 to transmit light. Road 13a,1
3b is formed. Further, an envelope 14 is formed of black epoxy or the like so as to enclose the entire element. In the above-described configuration, by appropriately selecting the size of the transparent insulating thin film 20, the creepage distance of the gap 19 at the interface between the optical transmission paths 13a, 13b and the envelope 14 can be adjusted to It is possible to make it longer along the ends.
そこで入出力間絶縁耐圧を向上させることができる。こ
の絶縁性薄膜を使用した効果の一例として、絶縁性薄膜
を用いない場合の絶縁耐圧がＡＣ５ＫＶｒｍｓであつた
フオトカプラに、絶縁性薄膜を設けることによつてＡＣ
８ＫＶｒｍｓの耐圧が確保されることが実１験により確
認できた。ところが、このような構成のフオトカプラで
は、半導体発光素子１１から照射された光が半導体受光
素子１２に到達する途中で、透明樹脂の光伝達路１３ａ
，１３ｂと透明絶縁性薄膜２０との界面を横切る。Therefore, the insulation voltage between input and output can be improved. As an example of the effect of using this insulating thin film, by providing an insulating thin film in a photocoupler whose dielectric strength voltage was AC5KVrms when no insulating thin film was used, AC
It was confirmed through an experiment that a withstand voltage of 8KVrms was ensured. However, in the photocoupler having such a configuration, the light emitted from the semiconductor light emitting element 11 passes through the transparent resin light transmission path 13a on the way to the semiconductor light receiving element 12.
, 13b and the transparent insulating thin film 20.
このとき透明樹脂の屈折率（シリコンの場合１，５〜１
．６）と透明絶縁性薄膜の屈折率（ポリイミドの場合１
．７）との不整合のため、界面で光の反射が起こり光伝
達効率を著しく低下させてしまう欠点があつた。この発
明は上記の事情を考慮してなされたもので、その目的と
するところは、入出力間絶縁耐圧を高めながらなおかつ
光伝達効率の良いフオトカプラを提供するこざである。At this time, the refractive index of the transparent resin (1.5 to 1 in the case of silicon)
．． 6) and the refractive index of the transparent insulating thin film (1 in the case of polyimide)
．． 7), there was a drawback that light was reflected at the interface and the light transmission efficiency was significantly reduced. The present invention has been made in consideration of the above circumstances, and its purpose is to provide a photocoupler that has high dielectric strength between input and output and has high optical transmission efficiency.
以下、この発明の一実施例を図面を参照して説明する。An embodiment of the present invention will be described below with reference to the drawings.
第３図はこの発明によるフオトカプラを示す図である。
図示するように、半導体発光素子１１に間隙をおいて対
向して半導体受光素子１２が設けられ、この間に各素子
１１，１２を被つて高純度シリコン等の透明樹脂で構成
された光伝達路１３ａ及び１３ｂが形成されている。間
隔をおいて相対向するリード１５及び１７は夫々半導体
発光素子１１及び受光素子１２に接続して取付けられて
いる。黒色エポキシ等の不等明樹脂からなる外囲器１４
が前記各リード１５，１７及び光伝達路１３ａ，１３ｂ
の透明樹脂を被覆するように設けられている。そして絶
縁性薄膜２０が前記光伝達路を横切るようにその中間位
置すなわち、光伝達路１３ａと１３ｂとの間に設けられ
ている。前記絶縁性薄膜２０は開口２１を有し、この開
口２１はここでは発光素子１１の発光部面積および受光
素子１２の受光部面積よりも大きく形成されている。ま
たこの絶縁性薄膜２０はその周縁部が前記光伝達路１３
ａ，１３ｂの透明樹脂外壁よりも突出して前記外囲器１
４の不透明樹脂内壁にくい込むように前記透明樹脂より
も大きな外形をもつように形成されている。第４図は絶
縁性薄膜２０の平面形状を示す図である。FIG. 3 is a diagram showing a photocoupler according to the present invention.
As shown in the figure, a semiconductor light-receiving element 12 is provided facing the semiconductor light-emitting element 11 with a gap therebetween, and a light transmission path 13a made of transparent resin such as high-purity silicon covers each of the elements 11 and 12 between them. and 13b are formed. Leads 15 and 17 facing each other with an interval are connected to and attached to the semiconductor light emitting element 11 and the light receiving element 12, respectively. Envelope 14 made of non-uniform resin such as black epoxy
are the leads 15, 17 and the optical transmission paths 13a, 13b.
It is provided so as to cover the transparent resin. An insulating thin film 20 is provided at an intermediate position to cross the optical transmission path, that is, between the optical transmission paths 13a and 13b. The insulating thin film 20 has an opening 21, and the opening 21 is formed here to be larger than the area of the light emitting part of the light emitting element 11 and the area of the light receiving part of the light receiving element 12. Further, the peripheral edge of this insulating thin film 20 is connected to the optical transmission path 13.
The envelope 1 protrudes beyond the transparent resin outer walls of a and 13b.
It is formed to have a larger outer shape than the transparent resin so as to sink into the inner wall of the opaque resin No. 4. FIG. 4 is a diagram showing the planar shape of the insulating thin film 20.
絶縁性薄膜２０には光透適用の開口２１が設けられる。
このような構成のフオトカプラによれば、光伝達路と外
囲器との界面の沿面距離を変えずに、光伝達の障害を取
り除くことができる。The insulating thin film 20 is provided with an opening 21 for transmitting light.
According to the photocoupler having such a configuration, obstacles to optical transmission can be removed without changing the creepage distance of the interface between the optical transmission path and the envelope.
このため、第２図のフオトカプラと同様の入出力間絶縁
耐圧を保さながら、光伝達効果の高いフオトカプラが構
成できる。また、このフオトカプラでは、光伝達が絶縁
性薄膜に設けた開口を通して行われるため、絶縁性薄膜
が透明である必要はなく、不透明であつても良い。なお
、この発明は上述した実施例に限定されるものではなく
、絶縁性薄膜、およびこの絶縁性薄膜に設けられる開口
はいかなる形状でも良い。Therefore, a photocoupler with high light transmission effect can be constructed while maintaining the input/output dielectric strength similar to that of the photocoupler shown in FIG. Furthermore, in this photocoupler, since light transmission is performed through the opening provided in the insulating thin film, the insulating thin film does not need to be transparent and may be opaque. Note that the present invention is not limited to the embodiments described above, and the insulating thin film and the opening provided in this insulating thin film may have any shape.
例えば第５図に示すように、円形の絶縁性薄膜２０に円
形の開口２１を設けても実施例と同様の効果が得られる
。以上説明したようにこの発明によれば、入出力間絶縁
耐圧が高く、光伝達効率の良いフオトカプラが得られる
。For example, as shown in FIG. 5, even if a circular opening 21 is provided in a circular insulating thin film 20, the same effect as in the embodiment can be obtained. As explained above, according to the present invention, a photocoupler with high input-output insulation voltage and high light transmission efficiency can be obtained.
第１図、第２図は従来のフオトカプラを示す図、第３図
はこの発明の一実施例に係るフオトカプラを示す図、第
４図は第３図の絶縁性薄膜の平面形状を示す図、第５図
は他の実施例を示す図である。
１１・・・・・・半導体発光素子、１２・・・・・・半
導体受光素子、１３・・・・・・光伝達路、２０・・・
・・・絶縁性薄膜、２１・・・・・・開口。1 and 2 are diagrams showing a conventional photocoupler, FIG. 3 is a diagram showing a photocoupler according to an embodiment of the present invention, and FIG. 4 is a diagram showing a planar shape of the insulating thin film in FIG. FIG. 5 is a diagram showing another embodiment. 11... Semiconductor light emitting element, 12... Semiconductor light receiving element, 13... Light transmission path, 20...
...Insulating thin film, 21...Opening.
Claims (1)
ードと、前記両リードの相対向する面に夫夫取り付けら
れ、相互に間隔をおいて対向配置された半導体発光素子
及び半導体受光素子と、前記発光素子−受光素子間を結
ぶ透明樹脂製の光伝達路と、前記各リード及び透明樹脂
を被覆する不透明樹脂製の外囲器と、前記光伝達路を横
切るようにその中間位置に設けられた絶縁性薄膜とを具
備し、前記絶縁性薄膜はその周縁部が前記透明樹脂の外
壁よりも突出して前記外囲器の不透明樹脂内壁にくい込
むように前記透明樹脂よりも大きな外形をもつように形
成され、かつ前記光伝達路内において開口を有すること
を特徴とする光結合半導体装置。 ２ 絶縁性薄膜に設けられる開口は半導体発光素子の発
光部面積および半導体受光素子の受光部面積のいずれよ
りも大きく形成されていることを特徴とする特許請求の
範囲第１項記載の光結合半導体装置。[Scope of Claims] 1. First and second leads arranged opposite to each other with a space between them, and semiconductors attached to opposing surfaces of the leads and arranged facing each other with a space between them. A light-emitting element and a semiconductor light-receiving element, a light transmission path made of transparent resin that connects the light-emitting element and the light-receiving element, an envelope made of opaque resin that covers each of the leads and the transparent resin, and an envelope that crosses the light transmission path. and an insulating thin film provided at an intermediate position between the transparent resin and the transparent resin such that the peripheral edge of the insulating thin film protrudes beyond the outer wall of the transparent resin and sinks into the inner wall of the opaque resin of the envelope. 1. An optically coupled semiconductor device, characterized in that the device is formed to have a larger outer shape than the optical fiber, and has an opening in the optical transmission path. 2. The optically coupled semiconductor according to claim 1, wherein the opening provided in the insulating thin film is formed larger than both the area of the light emitting part of the semiconductor light emitting element and the area of the light receiving part of the semiconductor light receiving element. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55141736A JPS5915501B2 (en) | 1980-10-09 | 1980-10-09 | Optical coupling semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55141736A JPS5915501B2 (en) | 1980-10-09 | 1980-10-09 | Optical coupling semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5766679A JPS5766679A (en) | 1982-04-22 |
| JPS5915501B2 true JPS5915501B2 (en) | 1984-04-10 |
Family
ID=15299005
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55141736A Expired JPS5915501B2 (en) | 1980-10-09 | 1980-10-09 | Optical coupling semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5915501B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61214585A (en) * | 1985-03-20 | 1986-09-24 | Toshiba Corp | Photocoupling semiconductor device |
| JP2009021333A (en) * | 2007-07-11 | 2009-01-29 | Nec Electronics Corp | Method of manufacturing optical coupling apparatus, and optical coupling apparatus |
-
1980
- 1980-10-09 JP JP55141736A patent/JPS5915501B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5766679A (en) | 1982-04-22 |
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