JPS5915502B2 - Optical coupling semiconductor device - Google Patents
Optical coupling semiconductor deviceInfo
- Publication number
- JPS5915502B2 JPS5915502B2 JP55141737A JP14173780A JPS5915502B2 JP S5915502 B2 JPS5915502 B2 JP S5915502B2 JP 55141737 A JP55141737 A JP 55141737A JP 14173780 A JP14173780 A JP 14173780A JP S5915502 B2 JPS5915502 B2 JP S5915502B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- insulating thin
- resin
- transparent resin
- transparent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
- H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Description
【発明の詳細な説明】
この発明は、例えば高耐圧のスイッチング素子、あるい
は電圧の異なる回路相互の結合等に使用さ 。DETAILED DESCRIPTION OF THE INVENTION The present invention can be used, for example, for high voltage switching elements or for coupling circuits with different voltages.
れる光結合半導体装置に関する。一般に、光結合半導体
装置（以下、フォトカプラと呼ぶ）は第１図に示すよう
に構成されている。The present invention relates to an optically coupled semiconductor device. Generally, an optically coupled semiconductor device (hereinafter referred to as a photocoupler) is configured as shown in FIG.
すなわち、半導体発光素子１１に対向して半導体受光素
子１２が設けられ、この間に高純度シリコン等の透明樹
脂で光伝達路１３が形成される。そ５ して、前記発光
素子１１および受光素子１２、光伝達路１３を包み込む
ように黒色エポキシ等の不透明樹脂で外囲器１４が形成
される。さらに、半導体発光素子１１はリード１５によ
つて入力側回路１６に接続され、半導体受光素子１２は
リード１０ＩＴによつて出力側回路１８に接続される。
このような構成のフォトカプラにおいては、透明樹脂の
光伝達路１３と不透明樹脂の外囲器１４との密着力が弱
いため、使用時の温度サイクル等により、各樹脂の熱膨
張係数の違いから両者の界１５面に幅数１０μｍ〜数ｌ
００ｔｔｍ程度の間隙１９を生ずることがある。ところ
で、フォトカプラに要求される主要な特性の一つとして
、入出力間絶縁耐圧が高いことがあげられる。That is, a semiconductor light receiving element 12 is provided opposite to a semiconductor light emitting element 11, and a light transmission path 13 is formed between the semiconductor light receiving element 12 and a transparent resin such as high purity silicon. 5 Then, an envelope 14 is formed of an opaque resin such as black epoxy so as to enclose the light emitting element 11, light receiving element 12, and light transmission path 13. Furthermore, the semiconductor light emitting element 11 is connected to the input side circuit 16 through a lead 15, and the semiconductor light receiving element 12 is connected to the output side circuit 18 through a lead 10IT.
In a photocoupler with such a configuration, the adhesion between the transparent resin light transmission path 13 and the opaque resin envelope 14 is weak, and due to temperature cycles during use, etc., the difference in thermal expansion coefficient of each resin Width of several 10 μm to several liters on 15 planes between both
A gap 19 of approximately 0.00 ttm may occur. By the way, one of the main characteristics required of a photocoupler is high dielectric strength between input and output.
これは、フォトカプラの入力側端子フｏ と出力側端子
との間に高電圧、例えば交流２．５ＫＶｒｍｓを印加し
た時の絶縁耐圧をいうもので、フォトカプラは通常入出
力回路間が光で結合されるため絶縁耐圧が高い。しかし
、フォトカプラ内部に前記のような間隙が存在すると、
高電圧印加ノ５ 時にこの間隙に沿つた放電現象が起こ
り、入出力間絶縁耐圧を著しく損なつてしまう。この放
電現象を抑制、あるいは軽減する手段として、間隙の沿
面距離を長くするのが効果的である。This refers to the dielectric strength voltage when a high voltage, for example 2.5 KVrms, is applied between the input side terminal and output side terminal of a photocoupler. Because they are bonded together, their dielectric strength is high. However, if the above-mentioned gap exists inside the photocoupler,
When a high voltage is applied, a discharge phenomenon occurs along this gap, significantly impairing the input/output dielectric strength. As a means to suppress or reduce this discharge phenomenon, it is effective to increase the creepage distance of the gap.
そこで、従来第２図に示すように、半導体発１０光素子
１１と半導体受光素子１２との間に、厚さ数μｍ〜数１
００ｔｔｍ程度の透明絶縁性薄膜２０を設けている。こ
の透明絶縁性薄膜２０は、ポリイミド・フィルム、ＦＥ
Ｐ（四フッ化エチレン−六フッ化エチレン共重合体）フ
ィルム、あるいは■５ ポリイミド・フィルムにＦＥＰ
をコーティングしたもの等で形成されるもので、前記絶
縁性薄膜２０の両側に高純度シリコン等で光伝達路１３
ａ、１３ｂが形成される。さらに、この素子全体を包み
込むように黒色エポキシ等で外囲器１４が形成される。
上述したような構成として、前記透明絶縁性薄膜２０の
大きさを図示の如く、その周縁部が前記光電達路の外壁
よりも突出して外囲器１４の不透明樹脂内壁にくい込む
ように大きな外形に選ぶことにより、光伝達路１３ａ，
１３ｂと外囲器１４との界面の間隙１９の沿面距離を絶
縁性薄膜２０の端部にそつて長くすることが可能である
。Therefore, conventionally, as shown in FIG.
A transparent insulating thin film 20 of about 00 ttm is provided. This transparent insulating thin film 20 is made of polyimide film, FE
P (tetrafluoroethylene-hexafluoroethylene copolymer) film or ■5 FEP on polyimide film
The optical transmission path 13 is formed of high-purity silicon or the like on both sides of the insulating thin film 20.
a, 13b are formed. Further, an envelope 14 is formed of black epoxy or the like so as to enclose the entire element.
As for the above-described structure, the size of the transparent insulating thin film 20 is set to a large external shape so that its peripheral edge protrudes beyond the outer wall of the photoconductor path and sinks into the opaque resin inner wall of the envelope 14, as shown in the figure. By selecting the optical transmission path 13a,
It is possible to increase the creepage distance of the gap 19 at the interface between the envelope 13b and the envelope 14 along the edge of the insulating thin film 20.
したがつて、入出力間絶縁耐圧を向上させることができ
る。この絶縁性薄膜を使用した効果の一例として、絶縁
性薄膜を用いない場合の絶縁耐圧がＡＣ５ＫＶｒｍｓで
あつたフオトカプラに、絶縁性薄膜を設けることによつ
てＡＣ８ＫＶｒｍｓの耐圧が確保されることが実験によ
り確認できた。ところが、発光、受光素子間に絶縁性薄
膜を設置する時に平面内で回転してしまうことがある。
−般に絶縁性薄膜の形状は正方形、あるいは長方形に形
成されている。したがつて、第３図に示すように絶縁性
薄膜が所期位置２０に設置されず、２０′で示すように
斜めに配置されてしまう。このため、フオトカプラを量
産する場合、個々のフオトカプラにおいて入出力間絶縁
耐圧にばらつきが発生することが多いという欠点があつ
た。この発明は上記の事情を考慮してなされたもので、
その目的とするところは、入出力間絶縁耐圧のばらつき
を防止できるフオトカプラを提供することである。Therefore, the insulation voltage between input and output can be improved. As an example of the effect of using this insulating thin film, experiments have shown that by providing an insulating thin film in a photocoupler, which had a breakdown voltage of AC5KVrms when no insulating thin film was used, a breakdown voltage of AC8KVrms was secured. It could be confirmed. However, when installing the insulating thin film between the light emitting and light receiving elements, it may rotate within the plane.
- Generally, the shape of the insulating thin film is square or rectangular. Therefore, the insulating thin film is not placed at the intended position 20 as shown in FIG. 3, but is placed diagonally as shown at 20'. For this reason, when photocouplers are mass-produced, there is a drawback that variations in dielectric breakdown voltage between input and output often occur in individual photocouplers. This invention was made in consideration of the above circumstances,
The purpose is to provide a photocoupler that can prevent variations in dielectric strength between input and output.
以下、この発明の一実施例を図面を参照して説明する。An embodiment of the present invention will be described below with reference to the drawings.
第４図は、この発明によるフオトカプラの絶縁性薄膜の
平面形状を示す図である。図示するように絶縁性薄膜が
発光素子１１および受光素子１２を設置するリード１５
，１７の外形より大きい円周を有する円形状に形成され
たものを設置して構成する。このような形状の絶縁性薄
膜を使用することにより、絶縁性薄膜を設置する場合、
従来のように方向を定める必要がなくなり、設置が容易
となる。FIG. 4 is a diagram showing the planar shape of the insulating thin film of the photocoupler according to the present invention. As shown in the figure, an insulating thin film is a lead 15 on which a light emitting element 11 and a light receiving element 12 are installed.
. By using an insulating thin film with this shape, when installing an insulating thin film,
There is no need to determine the direction as in the past, making installation easier.
さらに、この絶縁性薄膜が平面方向に回転しても影響が
ないため、入出力間絶縁耐圧の均一なフオトカプラを作
業性よく量産できる。なお、絶縁性薄膜を円形に形成す
るには打ち抜き等の方法によれば容易であり、また、こ
の絶縁性薄膜の大きさは入出力間絶縁耐圧の大きさに応
じて設定する必要があるのはもちろんである。Furthermore, since there is no effect even if this insulating thin film is rotated in a plane direction, it is possible to mass-produce photocouplers with uniform dielectric strength voltage between input and output with high work efficiency. It should be noted that it is easy to form an insulating thin film into a circular shape using a method such as punching, and the size of this insulating thin film needs to be set according to the dielectric strength voltage between input and output. Of course.
以上説明したようにこの発明によれば、入出力間絶縁耐
圧のばらつきが少ないフオトカプラが得られる。As explained above, according to the present invention, a photocoupler with less variation in dielectric strength voltage between input and output can be obtained.
第１図、第２図は従来のフオトカプラを示す図、第３図
は絶縁性薄膜の位置ずれを示す図、第４図はこの発明の
一実施例に係る絶縁性薄膜を示す図である。
１１・・・・・・半導体発光素子、１２・・・・・・半
導体受光素子、１３・・・・・・光伝達路、２０・・・
・・・絶縁性薄膜。FIGS. 1 and 2 are diagrams showing a conventional photocoupler, FIG. 3 is a diagram showing misalignment of an insulating thin film, and FIG. 4 is a diagram showing an insulating thin film according to an embodiment of the present invention. 11... Semiconductor light emitting element, 12... Semiconductor light receiving element, 13... Light transmission path, 20...
...Insulating thin film.
Claims (1)
ードと、前記両リードの相対向する面に夫夫取り付けら
れ、相互に間隔をおいて対向配置された半導体発光素子
及び半導体受光素子と、前記発光素子−受光素子間に設
けられた透明樹脂製の光伝達路と、前記各リード及び透
明樹脂を被覆する不透明樹脂外囲器と、前記光伝達路を
横切るように発光素子−受光素子間に設けられた透明絶
縁性薄膜とを備え、前記透明絶縁性薄膜は平面円形状を
なし、かつその周縁部が前記光伝達路の透明樹脂外壁よ
りも突出して、前記外囲器の不透明樹脂内壁にくい込む
ように、その透明樹脂よりも大きな外径をもつように形
成されていることを特徴とする光結合半導体装置。1. First and second leads arranged facing each other with a space between them, and a semiconductor light emitting element and a semiconductor light receiving element mounted on opposing surfaces of the leads and arranged facing each other with a space between them. an optical transmission path made of transparent resin provided between the light emitting element and the light receiving element; an opaque resin envelope covering each lead and the transparent resin; a transparent insulating thin film provided between the elements, the transparent insulating thin film has a planar circular shape, and its peripheral edge protrudes beyond the transparent resin outer wall of the light transmission path, so that the opaqueness of the envelope An optically coupled semiconductor device characterized in that it is formed to have an outer diameter larger than that of a transparent resin so as to sink into the inner wall of the resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55141737A JPS5915502B2 (en) | 1980-10-09 | 1980-10-09 | Optical coupling semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55141737A JPS5915502B2 (en) | 1980-10-09 | 1980-10-09 | Optical coupling semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5766680A JPS5766680A (en) | 1982-04-22 |
| JPS5915502B2 true JPS5915502B2 (en) | 1984-04-10 |
Family
ID=15299027
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55141737A Expired JPS5915502B2 (en) | 1980-10-09 | 1980-10-09 | Optical coupling semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5915502B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6179601A (en) * | 1984-09-27 | 1986-04-23 | 末広精工株式会社 | Guide bar for saw chain |
| JPS61200202U (en) * | 1985-06-05 | 1986-12-15 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61214585A (en) * | 1985-03-20 | 1986-09-24 | Toshiba Corp | Photocoupling semiconductor device |
-
1980
- 1980-10-09 JP JP55141737A patent/JPS5915502B2/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6179601A (en) * | 1984-09-27 | 1986-04-23 | 末広精工株式会社 | Guide bar for saw chain |
| JPS61200202U (en) * | 1985-06-05 | 1986-12-15 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5766680A (en) | 1982-04-22 |
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