JPS5916693B2 - Method for forming conductive film on optical lens for projection type cathode ray tube - Google Patents
Method for forming conductive film on optical lens for projection type cathode ray tubeInfo
- Publication number
- JPS5916693B2 JPS5916693B2 JP2276079A JP2276079A JPS5916693B2 JP S5916693 B2 JPS5916693 B2 JP S5916693B2 JP 2276079 A JP2276079 A JP 2276079A JP 2276079 A JP2276079 A JP 2276079A JP S5916693 B2 JPS5916693 B2 JP S5916693B2
- Authority
- JP
- Japan
- Prior art keywords
- optical lens
- cathode ray
- projection type
- ray tube
- type cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
この発明は、光学レンズに強固な導電層を短時間のうち
に形成することを可能とした投写型ブラウン管用光学レ
ンズの導電層形成方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for forming a conductive layer for an optical lens for a projection type cathode ray tube, which makes it possible to form a strong conductive layer on the optical lens in a short time.
投写型ブラウン管の如く、管体内に光学レンズを内蔵す
るブラウン管は、光学レンズに帯電現象が起ると附近の
電位分布が変化し、電子ビームの軌道を乱すなどの不具
合が生ずるので、光学レンズに導電層を形成している。For cathode ray tubes, such as projection type cathode ray tubes, which have an optical lens built into the tube, if a charging phenomenon occurs in the optical lens, the potential distribution in the vicinity changes, causing problems such as disturbing the trajectory of the electron beam. Forms a conductive layer.
第1図は、この種投写型ブラウン管に用いられるメニス
カスレンズ1を示し、開孔2に配備した螢光面ターゲッ
ト3が電子ビームによって走査されるので、電子ビーム
の散乱電子や螢光面ターゲット3からの2次電子がメニ
スカスレンズ1の外表面4に流れこみ、外表面4に帯電
現象が起きて螢光面ターゲット3の近傍の電位分布が微
妙に乱れ、電子ビーム軌道が定められて画像のずれ歪み
などの不具合を生ずる。FIG. 1 shows a meniscus lens 1 used in this type of projection type cathode ray tube. Since a fluorescent surface target 3 placed in an aperture 2 is scanned by an electron beam, the scattered electrons of the electron beam and the fluorescent surface target 3 are The secondary electrons flow into the outer surface 4 of the meniscus lens 1, a charging phenomenon occurs on the outer surface 4, and the potential distribution near the fluorescent surface target 3 is slightly disturbed.The electron beam trajectory is determined and the image is changed. This causes problems such as misalignment and distortion.
このような欠点を避けるためにメニスカスレンズ1の電
子ビームが飛来する側、すなわち外表面4に螢光面ター
ゲット3を配備する前に、予め導電層を形成する。In order to avoid such drawbacks, a conductive layer is formed in advance on the side of the meniscus lens 1 from which the electron beam comes, that is, before the fluorescent surface target 3 is provided on the outer surface 4.
この導電層は、光学的に透明で機械的に強く容易に剥離
されないような強度を持たせるため、インジウムを高温
加熱下で蒸着したものが多用されている。This conductive layer is often made of indium vapor-deposited under high-temperature heating in order to be optically transparent, mechanically strong, and strong enough not to be easily peeled off.
しかし、メニスカスレンズ1は、椀形であるので、真空
蒸着の際高温蒸着のための昇温加熱及び下降を徐々にゆ
っくりと行なわないと歪が生じレンズガラスが割れる。However, since the meniscus lens 1 is bowl-shaped, distortion will occur and the lens glass will break unless the heating and lowering of the temperature for high-temperature deposition are carried out gradually and slowly during vacuum deposition.
また、加熱のための熱源の形状が椀形に類似していない
と均等に加熱昇温が困難で、このことも昇温下降をゆる
やかに行なわなければならないという制約になる。Furthermore, if the shape of the heat source for heating is not similar to a bowl shape, it will be difficult to evenly heat and raise the temperature, and this will also impose a constraint that the temperature must be raised and lowered slowly.
さらに真空槽内で多数個のメニスカスレンズ1を同時に
真空蒸着するように熱源を配備することはなおさら難か
しい0
以上のように、メニスカスレンズ1の如き形状の光学レ
ンズを高温下で真空蒸着するには、第1に長時間の作業
時間を要する、第2に加熱熱源の配備が難しい。Furthermore, it is even more difficult to provide a heat source to simultaneously vacuum-deposit a large number of meniscus lenses 1 in a vacuum chamber. Firstly, it requires a long working time, and secondly, it is difficult to provide a heating source.
第3に同時に多数個の蒸着が難しいといった欠点がある
。Thirdly, there is a drawback that it is difficult to deposit a large number of layers at the same time.
さらに第4として、曲面に一様な蒸着膜を形成するよう
に蒸着源を配置することはメニスカスレンズ1が椀形と
いう特殊な形状をもつことから非常に難しい。Furthermore, fourthly, it is very difficult to arrange the vapor deposition source so as to form a uniform vapor deposited film on a curved surface because the meniscus lens 1 has a special bowl-shaped shape.
特に、同時に多数個のレンズは一様な蒸着膜を形成する
ように蒸着源を配置することは特別難しいという問題点
をはらむ。In particular, when using a large number of lenses at the same time, it is particularly difficult to arrange the vapor deposition sources so as to form a uniform vapor deposition film.
かかる、欠点に対して、近年発展してきたスパッタリン
グやイオンブレーティングによって強固な膜を形成する
コート方法が知られている。In order to overcome these drawbacks, recently developed coating methods have been known in which a strong film is formed by sputtering or ion blasting.
これらの方法は被コート体が、金属などの導体であるこ
とが必要で、ガラスなどの絶縁体にコートすることは本
来的にはできず、たとえできるとしても蒸着源などに特
別な工夫を必要とするとか、被コート体の形状に制限が
生ずるとかの欠点があった。These methods require that the object to be coated be a conductor such as a metal, and it is inherently impossible to coat an insulator such as glass, and even if it is possible, special ingenuity is required for the evaporation source. However, there are disadvantages in that there are limitations on the shape of the object to be coated.
この発明は、かかる欠点、制限を解消するためになされ
たもので、投写型ブラウン管用の椀形光学レンズに椀形
メツシュを密着させ、上記椀形メツシュを電極として、
上記光学レンズにイオンブレーティングによる導電層を
形成しようとするものである。The present invention was made to eliminate such drawbacks and limitations, and includes a bowl-shaped mesh that is brought into close contact with a bowl-shaped optical lens for a projection type cathode ray tube, and the bowl-shaped mesh used as an electrode.
The purpose is to form a conductive layer on the optical lens by ion blating.
第2図はこの発明の一実施例を説明するための説明図で
ある。FIG. 2 is an explanatory diagram for explaining one embodiment of the present invention.
第2図において、メニスカスレンズ1の椀形状に合致す
るように成形されたメツシュ電極5にメニスカスレンズ
1を密着し、これをメツシュ電極5がインジウム蒸発源
6に対向して載置される。In FIG. 2, the meniscus lens 1 is closely attached to a mesh electrode 5 formed to match the bowl shape of the meniscus lens 1, and the mesh electrode 5 is placed facing an indium evaporation source 6.
直流の高圧電源7はその−(マイナス)側が前記メツシ
ュ電極5の一端に接続され、+(プラス)側は前記イン
ジウム蒸発源6のヒーターリード線8の一方に接続され
る。The DC high voltage power supply 7 has its - (minus) side connected to one end of the mesh electrode 5, and its + (plus) side connected to one of the heater lead wires 8 of the indium evaporation source 6.
このような構成において、排気系を作動させてベルジャ
9の内部を排気し、ついでアルゴン等の不活性気体を導
入する。In such a configuration, the exhaust system is operated to exhaust the inside of the bell jar 9, and then an inert gas such as argon is introduced.
そして、この雰囲気で蒸発源6に通電し、インジウムを
蒸発させる。Then, in this atmosphere, the evaporation source 6 is energized to evaporate indium.
この場合、メツシュ電極5に印加された高電圧によって
形成される電界(あるいは電気力線)は、メツシュ電極
5が椀形であるので、図中に示される線群のように椀形
に対応するように拡がり状を呈シ、メニスカスレンズ1
の表面に直角に入るものとされる。In this case, since the mesh electrode 5 is bowl-shaped, the electric field (or lines of electric force) formed by the high voltage applied to the mesh electrode 5 corresponds to the bowl shape as shown in the line group shown in the figure. Meniscus lens 1
is assumed to be perpendicular to the surface of
電界がこうした状態にあることから、上記蒸発したイン
ジウムは、アルゴン気体分子と衝突してイオン流となり
、上記電界方向にそのまま乗った状態で加速を受けなが
らメツシュ電極5およびメニスカスレンズ1の表面に直
角に射突する。Since the electric field is in this state, the evaporated indium collides with the argon gas molecules to form an ion flow, and is accelerated while riding in the direction of the electric field at right angles to the surfaces of the mesh electrode 5 and the meniscus lens 1. to shoot at.
メツシュ電極5がメニスカスレンズ1に椀形として密着
することから、メツシュ電極ミ2船よびメニスカスレン
ズ1の全体にわたって均等かつ強力なイオンの浸透がみ
もれ、こうして、インジウムのメツシュ裏側への廻シ込
み作用もあって、導電性に優れ、容易に剥離しない導電
層が形成されるとともに、メツシュ電極5は電極として
だけでなく、導電層の補強芯材として、また導電体とし
ても機能することから、一層導電性に優れ、しかも導電
層の強化が図れる。Since the mesh electrode 5 is in close contact with the meniscus lens 1 in a bowl-shaped manner, ion penetration is even and strong throughout the mesh electrode 2 and the meniscus lens 1, and in this way, the indium is transferred to the back side of the mesh. The mesh electrode 5 functions not only as an electrode but also as a reinforcing core material for the conductive layer and as a conductor. , it has even better conductivity and can strengthen the conductive layer.
さらに、従来のように熱工程が全く不要であるので、き
わめて短時間に導電層を形成することができる。Furthermore, unlike the conventional method, there is no need for any thermal process, so the conductive layer can be formed in an extremely short time.
この実施例ではベルジャ9内に1個のメニスカスレンズ
1を載置して示したが、ベルジャ9内の空間に複数個の
メニスカスレンズ1が収納可能であれば、同時に多数個
のメニスカスレンズ1に対して導電層を形成するのも極
めて容易である。In this embodiment, one meniscus lens 1 is placed inside the bell jar 9, but if a plurality of meniscus lenses 1 can be stored in the space inside the bell jar 9, many meniscus lenses 1 can be placed at the same time. On the other hand, it is also extremely easy to form a conductive layer.
以上のようにこの発明によれば、投写型ブラウン管用の
椀形光学レンズに密着させた椀形メツシュを電極として
、上記光学レンズにイオンブレーティングによる導電層
を形成することを特徴とするものであるから、光学レン
ズが特殊な椀形であるにもかかわらず、きわめて短時間
のうちに強固な導電層を形成することができ、それが、
蒸発源を光学レンズの特殊な椀形に対応するように配置
を工夫することなく、レンズ表面に均等かつ強力な導電
層を形成することができる。As described above, according to the present invention, a conductive layer is formed on the optical lens by ion blating using a bowl-shaped mesh that is closely attached to a bowl-shaped optical lens for a projection type cathode ray tube as an electrode. Because of this, even though the optical lens has a special bowl shape, it is possible to form a strong conductive layer in a very short time.
A uniform and strong conductive layer can be formed on the lens surface without having to arrange the evaporation source to correspond to the special bowl shape of the optical lens.
このことは、多数個のレンズに対して有効となる。This is effective for a large number of lenses.
特に、メツシュ電極は、椀形であるから、電極として機
能するだけでなく、導電層の補強芯材として、また導電
体として機能し、したがって、導電層が非常に強固にな
るとともに、導電性に優れたものとなる。In particular, since the mesh electrode is bowl-shaped, it not only functions as an electrode, but also as a reinforcing core material for the conductive layer and as a conductor, making the conductive layer extremely strong and highly conductive. It will be excellent.
第1図は投写型ブラウン管に内蔵されるメニスカスレン
ズと螢光面ターゲの一例を示す断面図、第2図はこの発
明の一実施例を説明するための説明図である。
図において、1はメニスカスレンズ、5はメツシュ電極
、6は蒸発源、7は高圧電源である。
なお図中同一符号は同一または相当部分を示す。FIG. 1 is a sectional view showing an example of a meniscus lens and a fluorescent surface target built into a projection type cathode ray tube, and FIG. 2 is an explanatory view for explaining one embodiment of the present invention. In the figure, 1 is a meniscus lens, 5 is a mesh electrode, 6 is an evaporation source, and 7 is a high voltage power source. Note that the same reference numerals in the figures indicate the same or corresponding parts.
Claims (1)
ュを密着させ、椀形メツシュを電極として、上記光学レ
ンズにイオンブレーティングによる導電層を形成するこ
とを特徴とする投写型ブラウン管用光学レンズの導電層
形成方法。1. An optical lens for a projection type cathode ray tube, characterized in that a bowl-shaped mesh is brought into close contact with a bowl-shaped optical lens for a projection type cathode ray tube, and a conductive layer is formed on the optical lens by ion blating using the bowl-shaped mesh as an electrode. Conductive layer formation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2276079A JPS5916693B2 (en) | 1979-02-27 | 1979-02-27 | Method for forming conductive film on optical lens for projection type cathode ray tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2276079A JPS5916693B2 (en) | 1979-02-27 | 1979-02-27 | Method for forming conductive film on optical lens for projection type cathode ray tube |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55115966A JPS55115966A (en) | 1980-09-06 |
| JPS5916693B2 true JPS5916693B2 (en) | 1984-04-17 |
Family
ID=12091628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2276079A Expired JPS5916693B2 (en) | 1979-02-27 | 1979-02-27 | Method for forming conductive film on optical lens for projection type cathode ray tube |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5916693B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58133372A (en) * | 1982-02-03 | 1983-08-09 | Hitachi Condenser Co Ltd | Apparatus for ion plating |
-
1979
- 1979-02-27 JP JP2276079A patent/JPS5916693B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55115966A (en) | 1980-09-06 |
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